JP5554351B2 - Wafer processing tape - Google Patents

Description

  The present invention relates to a wafer processing tape used when an adhesive film and / or a wafer is divided into individual chips by expanding.

  In the manufacturing process of a semiconductor device, after attaching a stretchable and adhesive wafer processing tape to a semiconductor wafer, the semiconductor wafer is cut (diced) into chips, the adhesive tape is expanded, and further cut. A step of picking up the chip is performed.

  As a wafer processing tape used in the manufacturing process of the semiconductor device, in addition to an adhesive tape (dicing tape) composed of a base sheet and an adhesive layer, a die bonding film (die attach film) which is a dicing tape and an adhesive film A dicing die-bonding film having a structure in which is also laminated is proposed.

  Generally, when using a dicing die bonding film, first, the die bonding film side of the dicing die bonding film is bonded to the back surface of the semiconductor wafer to fix the semiconductor wafer, and then the semiconductor wafer and the die bonding film are used using a dicing blade. Is diced into chips. Thereafter, the dicing tape is expanded in the circumferential direction to widen the distance between the chips. This expanding process is performed to improve chip recognition by a CCD camera or the like, and to prevent damage to the chips caused by contact between adjacent chips when picking up the chips.

  However, in the dicing process, when the semiconductor wafer and the die bonding film are diced together using a dicing blade, not only the wafer cutting waste but also the die bonding film cutting waste is generated. Since the cutting dust of the die bonding film itself has an adhesive function, when the cutting dust is clogged in the dicing groove of the wafer, the chips stick to each other to cause a pick-up failure and the like, and the manufacturing yield of the semiconductor device decreases.

  In order to solve the above problems, there has been proposed a method in which only the semiconductor wafer is diced in the dicing process, and the dicing tape is expanded in the expanding process to divide the die bonding film corresponding to each chip. (For example, paragraph number “0055” to paragraph number “0056” of Patent Document 1). According to such a method for dividing the die bonding film using the tension at the time of expansion, no cutting waste of the adhesive is generated, and there is no adverse effect in the pickup process.

  As a method for cutting a semiconductor wafer, a half-cut dicing method is known in which a groove having a cutting depth shallower than the thickness of the wafer is formed from the wafer surface without performing full-cut dicing of the semiconductor wafer. In this method, the wafer can be divided into chips by expanding a dicing tape that holds the half-cut wafer. And also in this half-cut dicing method, it is possible to divide a die-bonding film with a wafer using the tension | tensile_strength at the time of an expansion.

  In recent years, a so-called stealth dicing method in which a wafer is cut in a non-contact manner using a laser processing apparatus has been proposed as a method for cutting a semiconductor wafer.

  For example, in Patent Document 2, as a stealth dicing method, laser light is applied by focusing light on the inside of a semiconductor substrate on which a sheet (dicing tape) is attached with a die bonding resin layer (die bonding film) interposed therebetween. By forming a modified region by multiphoton absorption inside the semiconductor substrate and forming the planned cutting portion in this modified region, the semiconductor is expanded along the planned cutting portion by expanding (expanding) the sheet. A method for cutting a semiconductor substrate comprising a step of cutting a substrate and a die bond resin layer is disclosed.

  According to the semiconductor substrate cutting method of Patent Document 2, since the semiconductor wafer and the die bond resin layer (die bonding film) are cut in a non-contact manner by laser light irradiation and sheet expansion, as in the case of using a dicing blade. The semiconductor wafer can be cut without causing chipping. Therefore, it is particularly useful when, for example, an ultrathin semiconductor wafer of 50 μm or less is cut.

  Regardless of whether the full-cut dicing method, half-cut dicing method, or stealth dicing method described above is used, in order to avoid the generation of cutting scraps on the die-bonding film, which is an adhesive, the die is expanded by dicing tape expansion. It is effective to divide the bonding film.

  However, since the die bonding film is flexible and easily stretched, there is a problem that the die bonding film is difficult to be divided by the expansion of the dicing tape. In order to improve the dividing property of the die bonding film by expanding, it is necessary to increase the expanding amount of the dicing tape. However, increasing the amount of expansion also increases the amount of deflection of the dicing tape, which adversely affects subsequent transport processes and the like.

  So far, as a method for eliminating the deflection of the dicing tape, for example, it has been proposed to heat and contract the bent portion (Patent Document 3).

JP 2007-5530 A JP 2003-338467 A JP 2007-157877 A

  However, even if the bent portion of the dicing tape is heated and shrunk as in the method described in Patent Document 3, the expansion amount is large, so that it does not shrink sufficiently and cannot be conveyed to the subsequent process. There was a problem that sufficient expansion could not be performed again in the process, resulting in poor pick-up performance.

The present inventors have a pressure-sensitive adhesive tape having a base film and a pressure-sensitive adhesive layer, and by expanding, when dividing the wafer bonded on the pressure-sensitive adhesive layer corresponding to individual chips or Wafer which is used when dividing the adhesive film bonded on the pressure-sensitive adhesive layer and / or the wafer bonded to the adhesive film corresponding to each chip, and shrinks when heated after expansion. It is a processing tape, and the adhesive tape has an elongation rate of 200% or more at 25 ° C., and after extending to an elongation rate of 200% or more at 25 ° C., the elongation rate is 120 by heating to 100 ° C. 1% at 25 ° C. with a distance between marked lines of 40 mm and a pulling speed of 1000 mm / min, the shrinking adhesive tape punched in No. 1 dumbbell shape (JIS K 6251). It has been found that each step can be performed efficiently by using a wafer processing tape characterized in that the force applied when stretched to 20% is 2N or more.

The wafer processing tape has an elongation of 150% or more at −10 ° C., an elongation of 200% at 25 ° C., and an elongation of 120 when heated to 100 ° C. It is applied when the contracted adhesive tape, shrunk to 1% or less and punched out in No. 1 dumbbell shape (JIS K 6251), is stretched to 120% at 25 ° C. with a distance between marked lines of 40 mm and a tensile speed of 1000 mm / min. The force is preferably 2N or more.

The wafer processing tape is
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In the state which heated the semiconductor wafer at 70-80 degreeC, the process of bonding the adhesive film bonded by the said adhesive layer of the said tape for wafer processing on the back surface of the said semiconductor wafer,
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption inside the wafer;
(F) dividing the semiconductor wafer and the adhesive film along a dividing line by expanding the wafer processing tape, and obtaining a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

Also,
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam along a dividing line from the surface of the semiconductor wafer to divide into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

Also,
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) cutting the semiconductor wafer along a cutting line using a dicing blade, and cutting the semiconductor wafer into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

Also,
(A) cutting a semiconductor wafer on which a circuit pattern is formed by using a dicing blade to a depth less than the thickness of the wafer along a predetermined cutting line;
(B) bonding a surface protection tape to the surface of the semiconductor wafer;
(C) a back grinding process in which the back surface of the semiconductor wafer is ground and divided into individual semiconductor chips;
(D) A step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor chip in a state where the semiconductor wafer is heated at 70 to 80 ° C .;
(E) peeling the surface protection tape from the semiconductor wafer surface;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

  Moreover, the said wafer processing tape can be used suitably also for the manufacturing method of the semiconductor device including the process of expanding at -15 degreeC-10 degreeC.

  The tape for wafer processing of the present invention has a base film and an adhesive layer, and expands to divide the adhesive film and / or wafer provided on the adhesive layer into individual chips. Excellent severability, and excellent shrinkage due to heat after expansion. Good maintainability of adhesive film and chip while maintaining high severability and good expansion. Can be picked up.

It is sectional drawing which shows an example of the tape for wafer processing of this invention. It is sectional drawing which shows the adhesive tape of this invention. It is sectional drawing which shows a mode that the modification | reformation area | region was formed in the semiconductor wafer by laser processing. (A) is sectional drawing which shows the state in which the tape for wafer processing was mounted in the expand apparatus, (b) is sectional drawing which shows the tape for wafer processing after expansion, and a semiconductor wafer. It is sectional drawing for demonstrating the process which heat-shrinks the part which does not overlap with the semiconductor chip of a wafer processing tape.

  Hereinafter, embodiments of the present invention will be described in detail.

  FIG. 1 is a sectional view of a wafer processing tape 1 showing an embodiment of the present invention. The wafer processing tape 1 includes a pressure-sensitive adhesive tape 10 having a base sheet 11 and a pressure-sensitive adhesive layer 12, and an adhesive film 13 provided on the pressure-sensitive adhesive layer 12.

  The wafer processing tape 1 of the present invention is expanded, and the adhesive film 13 bonded on the pressure-sensitive adhesive layer 12 and / or the wafer W bonded to the adhesive film 13 are applied to individual chips C. A wafer processing tape 1 that is used when correspondingly divided and shrinks by heating after expansion, and after the elongation of the adhesive tape 10 is 200% or more and the elongation is 200% The wafer processing tape 1 is characterized in that when it is heated to 100 ° C., the elongation becomes 120% or less and the force applied when it is stretched again to 120% at 25 ° C. is 2N or more.

  Below, the base material sheet 11, the adhesive layer 12, and the adhesive film 13 are each demonstrated in detail.

  Although it does not specifically limit as a material which comprises the base material sheet 11, It is preferable to select from polyolefin and a polyvinyl chloride.

  Examples of the polyolefin include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid. Examples thereof include homopolymers or copolymers of α-olefins such as methyl copolymers, ethylene-acrylic acid copolymers, and ionomers, or mixtures thereof.

  When the adhesive layer 12 to be described later is a type that is cured by irradiation with radiation and has a reduced adhesive strength, the substrate sheet preferably has the above characteristics and is radiation transmissive. The thickness of the base sheet is preferably 50 to 300 μm from the viewpoint of securing strength and chip pickup performance. Moreover, the base material sheet 11 may be a single layer or may be composed of a plurality of layers.

  The elongation rate of the adhesive tape 10 at 25 ° C. is 200% or more, and after extending to an elongation rate of 200%, it is contracted by heating to 100 ° C., and the elongation rate becomes 120% or less, and again 25 ° C. Therefore, it is preferable to use the base material sheet 11 having such characteristics so that the force applied when it is extended to 120% is greater than 2N.

<Adhesive layer>
The pressure-sensitive adhesive layer 12 can be produced by applying a pressure-sensitive adhesive on the base sheet 11. Although there is no restriction | limiting in particular as the adhesive layer 12, Although the peeling force (adhesion strength) with respect to the adhesive film 13 bonded on the adhesive layer 12 is expanded (when the adhesive film 13 and / or the wafer W are parted) It is sufficient that the chip C with the adhesive film 13 can be held and has a characteristic that it can be easily separated from the adhesive film 13 during pickup. In order to improve the pick-up property, the pressure-sensitive adhesive layer 12 is preferably radiation curable.

  For example, in the present invention, the main chain is an acrylic copolymer having at least a radiation-curable carbon-carbon double bond-containing group, a hydroxyl group, and a group containing a carboxyl group, and the gel fraction. Is preferably 60% or more. Furthermore, at least one selected from a compound (A) having a radiation curable carbon-carbon double bond having an iodine value of 0.5 to 20 in the molecule, a polyisocyanate, a melamine / formaldehyde resin, and an epoxy resin. It is preferable to contain a polymer obtained by addition reaction of the compound (B).

  The compound (A) that is one of the main components of the pressure-sensitive adhesive layer will be described. A preferable introduction amount of the radiation curable carbon-carbon double bond of the compound (A) is 0.5 to 20, more preferably 0.8 to 10 in terms of iodine value. If the iodine value is 0.5 or more, an effect of reducing the adhesive strength after irradiation can be obtained. If the iodine value is 20 or less, the fluidity of the adhesive after irradiation is sufficient and after stretching. Therefore, the problem that the image recognition of each element becomes difficult at the time of pick-up can be suppressed. Furthermore, the compound (A) itself is stable and easy to manufacture.

  The compound (A) preferably has a glass transition point of −70 ° C. to 0 ° C., more preferably −66 ° C. to −28 ° C. When the glass transition point (hereinafter referred to as Tg) is −70 ° C. or higher, the heat resistance against heat associated with radiation irradiation is sufficient. A sufficient scattering prevention effect can be obtained.

  The compound (A) may be produced by any method, and has, for example, a radiation curable carbon-carbon double bond such as an acrylic copolymer or a methacrylic copolymer, and a functional group. A compound obtained by reacting a compound having the functional group ((1)) with a compound having a functional group capable of reacting with the functional group ((2)) is used.

  Among these, the compound ((1)) having the radiation curable carbon-carbon double bond and the functional group is a single compound having a radiation curable carbon-carbon double bond such as an acrylic acid alkyl ester or a methacrylic acid alkyl ester. It can be obtained by copolymerizing a monomer ((1) -1) and a monomer ((1) -2) having a functional group. About the amount of adhesive double bonds, the amount of carbon-carbon double bonds contained in about 10 g of the heat-dried adhesive can be quantitatively measured by a weight increase method by bromine addition reaction in a dark place in vacuum.

  As a monomer ((1) -1), C6-C12 hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, or a single quantity of 5 or less carbon atoms The pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or methacrylates similar to these can be listed.

  As the monomer ((1) -1), the glass transition point can be changed by changing the number of carbon atoms, so that the desired glass transition point can be produced. In addition to the glass transition point, a monomer ((1) -1) may be blended with a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene, acrylonitrile for the purpose of improving compatibility and various performances. ) In the range of 5% by mass or less of the total mass.

  Examples of the functional group of the monomer ((1) -2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group. The monomer ((1)- Specific examples of 2) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates. N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, Phthalic anhydride, glycidyl acrylic And glycidyl methacrylate, allyl glycidyl ether, and those obtained by urethanizing a part of the isocyanate group of a polyisocyanate compound with a monomer having a hydroxyl group or a carboxyl group and a radiation curable carbon-carbon double bond. it can.

  In the compound (2), as the functional group used, when the functional group of the compound (1), that is, the monomer ((1) -2) is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, Examples include an epoxy group and an isocyanate group. In the case of a hydroxyl group, examples include a cyclic acid anhydride group and an isocyanate group. In the case of an amino group, examples include an epoxy group and an isocyanate group. In the case of an epoxy group, a carboxyl group, a cyclic acid anhydride group, an amino group and the like can be mentioned. Specific examples include those listed in the specific examples of the monomer ((1) -2) Can be listed.

  By leaving an unreacted functional group in the reaction between the compound (1) and the compound (2), it is possible to produce those specified in the present invention with respect to characteristics such as acid value or hydroxyl value.

  In the synthesis of the above compound (A), as the organic solvent when the reaction is carried out by solution polymerization, ketone, ester, alcohol, and aromatic solvents can be used, among which toluene, ethyl acetate , Isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, etc., are generally good solvents for acrylic polymers and preferably have a boiling point of 60-120 ° C. The polymerization initiator is α, α′-azobisisobutyl. A radical generator such as an azobis type such as nitrile or an organic peroxide type such as benzoyl peroxide is usually used. At this time, a catalyst and a polymerization inhibitor can be used together as necessary, and the compound (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. In terms of adjusting the molecular weight, it is preferable to use a mercaptan or carbon tetrachloride solvent. This reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.

  As described above, the compound (A) can be obtained. In the present invention, the weight average molecular weight of the compound (A) is preferably about 300,000 to 1,000,000. If it is less than 300,000, the cohesive force due to radiation irradiation becomes small, and when the wafer is diced, the device is likely to be displaced, and image recognition may be difficult. In order to prevent the deviation of the element as much as possible, the weight average molecular weight is preferably 400,000 or more. Moreover, when a weight average molecular weight exceeds 1 million, there exists a possibility of gelatinizing at the time of a synthesis | combination and a coating.

  In addition, the weight average molecular weight in this invention is a weight average molecular weight of polystyrene conversion.

  In addition, it is preferable that the compound (A) has an OH group having a hydroxyl value of 5 to 100 because the risk of pick-up mistakes can be further reduced by reducing the adhesive strength after irradiation. Moreover, it is preferable that a compound (A) has a COOH group used as the acid value of 0.5-30.

  Here, if the hydroxyl value of the compound (A) is too low, the effect of reducing the adhesive strength after irradiation is not sufficient, and if it is too high, the fluidity of the adhesive after irradiation tends to be impaired. If the acid value is too low, the effect of improving the tape restoring property is not sufficient, and if it is too high, the fluidity of the pressure-sensitive adhesive tends to be impaired.

  Next, the compound (B) which is another main component of the pressure-sensitive adhesive layer will be described. The compound (B) is a compound selected from polyisocyanates, melamine / formaldehyde resins, and epoxy resins, and can be used alone or in combination of two or more. This compound (B) acts as a cross-linking agent, and the cohesive force of the pressure-sensitive adhesive mainly composed of the compounds (A) and (B) is obtained by the cross-linking structure formed as a result of reaction with the compound (A) or the base sheet. It can be improved after application.

  There is no restriction | limiting in particular as polyisocyanate, For example, 4,4'- diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4 '-[2,2-bis (4 -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate Lysine diisocyanate, lysine triisocyanate and the like. Specifically, Coronate L (manufactured by Nippon Polyurethane Co., Ltd., trade name) or the like can be used.

  Specific examples of the melamine / formaldehyde resin include Nicalac MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.), Melan (trade name, manufactured by Hitachi Chemical Co., Ltd.), and the like. Furthermore, as an epoxy resin, TETRAD-X (Mitsubishi Chemical Corporation make, brand name) etc. can be used. In the present invention, it is particularly preferable to use polyisocyanates.

  The addition amount of (B) needs to be selected so as to be a ratio of 0.1 to 10 parts by mass, preferably 0.4 to 3 parts by mass with respect to 100 parts by mass of the compound (A). By selecting within this range, it is possible to obtain an appropriate cohesive force, and since the crosslinking reaction does not proceed abruptly, workability such as blending and application of the adhesive is improved.

  In the present invention, the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator (C). There is no restriction | limiting in particular in the photoinitiator (C) in which the adhesive layer 12b is contained, A conventionally well-known thing can be used. For example, benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone, 4,4′-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethylanthraquinone, t- Examples include anthraquinones such as butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triallylimidazole dimer (rophine dimer), and acridine compounds. These can be used alone or in combination of two or more.

  As addition amount of (C), it is preferable to set it as 0.1-10 mass parts with respect to 100 mass parts of compounds (A), and it is more preferable to set it as 0.5-5 mass parts.

  Furthermore, the radiation-curable pressure-sensitive adhesive used in the present invention can be blended with a tackifier, a pressure-adjusting agent, a surfactant, or other modifiers as necessary. Moreover, you may add an inorganic compound filler suitably.

  The thickness of the pressure-sensitive adhesive layer is preferably at least 5 μm or more, more preferably 10 μm or more. The pressure-sensitive adhesive layer may have a structure in which a plurality of layers are laminated.

<Adhesive film>
The adhesive film 13 is peeled off from the adhesive layer 12 and attached to the chip C when the chip C is picked up after the wafer W is bonded and cut or divided, and the chip C is attached to the package substrate or lead frame. It functions as a bonding film when it is fixed to.

  Although it does not specifically limit as the adhesive film 13, Although the film-like adhesive 13 generally used as a die-bonding film can be used conveniently, a polyimide-type adhesive agent and an acrylic adhesive An adhesive, an epoxy resin / phenolic resin / acrylic resin / inorganic filler blend adhesive, and the like are preferable. The thickness may be appropriately set, but is preferably about 5 to 100 μm.

  In the above-described embodiment, the wafer processing tape 1 including the pressure-sensitive adhesive tape 10 having the base sheet 11 and the pressure-sensitive adhesive layer 12 and the adhesive film 13 provided on the pressure-sensitive adhesive layer 12 is used. Although demonstrated, the tape for wafer processing which consists of the adhesive tape 10 which has the base material sheet 11 and the adhesive layer 12 as shown in FIG. 2 may be sufficient. In this case, since only the wafer is cut using a wafer processing tape, the adhesive film is not attached to the obtained chip. Therefore, when fixing to the package substrate or the lead frame, a separate adhesive is used. Need to be fixed.

  In this embodiment, the elongation at 25 ° C. is 200% or more, and after extending to 200% elongation, the elongation becomes 120% or less by heating to 100 ° C., and again Although the pressure-sensitive adhesive tape 10 having a force applied to 2N or more when stretched to 120% at 25 ° C. is used, the elongation at −10 ° C. is preferably 150% or more. In recent years, due to diversification of adhesive applications, there are also adhesive films that are more difficult to be separated at room temperature, and a method for improving the separation property by lowering the temperature at the time of division (10 ° C. or less) has also been proposed (for example, JP 2008-200811 A). -177260). If the expandability of the pressure-sensitive adhesive tape 10 at a low temperature is insufficient, the pressure-sensitive adhesive tape 10 is broken or the adhesive film cannot be divided. By setting the elongation percentage at −10 ° C. of the adhesive tape 10 to 150% or more, even an adhesive film that is difficult to break at room temperature can be cut at a low temperature. In order to make the elongation rate at −10 ° C. of the adhesive tape 10 be 150% or more, it is preferable to use the base material sheet 11 having such characteristics.

  In addition, when dealing only with an adhesive film that is difficult to break at room temperature, the elongation at -10 ° C is 150% or more, regardless of whether the elongation at 25 ° C is 200% or more, and The pressure-sensitive adhesive tape 10 is stretched to 200% and then shrunk by heating to 100 ° C., the elongation becomes 120% or less, and the force applied when it is again stretched to 120% at 25 ° C. is 2N or more. Should be used.

  The heating temperature when shrinking is preferably about 100 ° C. At higher temperatures, for example, 120 ° C., the risk that the adhesive tape 10 will melt and break increases. On the other hand, when the temperature is lower than 100 ° C., the amount of shrinkage is too small, and the force applied when the stretching is extended to 120% is less than 2N, and there is a risk that the pick-up success rate is deteriorated.

<Application>
The usage application of the wafer processing tape 1 of the present invention is not particularly limited as long as it is used in a method for producing a semiconductor device including a step of dividing the adhesive film 12 by at least an expand. For example, it can be suitably used in the following semiconductor device manufacturing methods (A) to (H).

Manufacturing method of semiconductor device (A)
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In the state which heated the semiconductor wafer at 70-80 degreeC, the process of bonding the adhesive film bonded by the said adhesive layer of the said tape for wafer processing on the back surface of the said semiconductor wafer,
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption inside the wafer;
(F) dividing the semiconductor wafer and the adhesive film along a dividing line by expanding the wafer processing tape, and obtaining a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

Manufacturing method of semiconductor device (B)
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam along a dividing line from the surface of the semiconductor wafer to divide into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

Manufacturing method of semiconductor device (C)
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) cutting the semiconductor wafer along a cutting line using a dicing blade, and cutting the semiconductor wafer into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

Manufacturing method of semiconductor device (D)
(A) cutting a semiconductor wafer on which a circuit pattern is formed by using a dicing blade to a depth less than the thickness of the wafer along a predetermined cutting line;
(B) bonding a surface protection tape to the surface of the semiconductor wafer;
(C) a back grinding process in which the back surface of the semiconductor wafer is ground and divided into individual semiconductor chips;
(D) A step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor chip in a state where the semiconductor wafer is heated at 70 to 80 ° C .;
(E) peeling the surface protection tape from the semiconductor wafer surface;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of semiconductor chips with adhesive films;
A step of holding the interval of the semiconductor chip (g) removing the raw Ji sag in the expanding step portion which does not overlap with the semiconductor chip by causing thermal shrinkage of the wafer processing tape,
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

Manufacturing method of semiconductor device (E)
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In the state which heated the semiconductor wafer at 70-80 degreeC, the process of bonding the adhesive film bonded by the said adhesive layer of the said tape for wafer processing on the back surface of the said semiconductor wafer,
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption inside the wafer;
(F) A step of dividing the semiconductor wafer and the adhesive film along a dividing line by expanding the wafer processing tape at −15 ° C. to 10 ° C. to obtain a plurality of semiconductor chips with adhesive films When,
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

Manufacturing method of semiconductor device (F)
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam along a dividing line from the surface of the semiconductor wafer to divide into individual semiconductor chips;
(F) expanding the wafer processing tape at −15 ° C. to 10 ° C. to divide the adhesive film corresponding to the semiconductor chip to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

Semiconductor device manufacturing method (G)
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) cutting the semiconductor wafer along a cutting line using a dicing blade, and cutting the semiconductor wafer into individual semiconductor chips;
(F) expanding the wafer processing tape at −15 ° C. to 10 ° C. to divide the adhesive film corresponding to the semiconductor chip to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

Manufacturing method of semiconductor device (H)
(A) cutting a semiconductor wafer on which a circuit pattern is formed by using a dicing blade to a depth less than the thickness of the wafer along a predetermined cutting line;
(B) bonding a surface protection tape to the surface of the semiconductor wafer;
(C) a back grinding process in which the back surface of the semiconductor wafer is ground and divided into individual semiconductor chips;
(D) A step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor chip in a state where the semiconductor wafer is heated at 70 to 80 ° C .;
(E) peeling the surface protection tape from the semiconductor wafer surface;
(F) expanding the wafer processing tape at −15 ° C. to 10 ° C. to divide the adhesive film corresponding to the semiconductor chip to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
(H) The semiconductor chip with an adhesive film can be used in a method for manufacturing a semiconductor device including a step of picking up a semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape.

<How to use>
A method for using the wafer processing tape of the present invention when the stealth dicing method is used will be described with reference to FIGS.

  First, as shown in FIG. 3, a laser beam is irradiated on a portion to be divided of the semiconductor wafer W to form 30 modified regions by multiphoton absorption inside the wafer. Separately, an adhesive film 13 is bonded onto the pressure-sensitive adhesive layer 12 of the pressure-sensitive adhesive tape 10 including the base material sheet 11 and the pressure-sensitive adhesive layer 12 shown in FIG. 2, and the wafer processing tape shown in FIG. 1 is prepared.

  Next, as shown in FIG. 4A, the back surface of the semiconductor wafer W is attached to the adhesive film 13, the ring frame 20 is attached to the outer peripheral portion of the adhesive layer 12, and the base sheet 11 of the adhesive tape. Is placed on the stage 21 of the expanding apparatus. In the figure, reference numeral 22 denotes a hollow cylindrical push-up member of the expanding device.

  Prior to the step of irradiating the semiconductor wafer W with laser light, a bonding step with the adhesive film 13 may be performed.

  Next, at a low temperature of −15 ° C. to 10 ° C., as shown in FIG. 4 (b), with the ring frame 20 fixed, the push-up member 22 of the expanding device is 5 to 200 mm / s at a speed of 5 to 200 mm / s. Raise the adhesive tape 10 by 20 mm. As a result, the adhesive tape 10 is stretched in the circumferential direction, and the wafer W is divided in units of chips starting from the modified region, and the adhesive film 13 is also divided. In addition, when expanding at room temperature, it is good to raise the pushing-up member 22 of the expanding apparatus 10 to 30 mm at a speed of 50 to 400 mm / s and expand the adhesive tape 10.

  Next, the push-up member 22 is returned to the original position, and the process of removing the slack of the wafer processing tape 10 generated in the previous expanding process and stably maintaining the interval between the semiconductor chips C is performed. In this step, for example, as shown in FIG. 5, a hot air nozzle 24 is used to form an annular region 23 between the region where the semiconductor chip C exists in the wafer processing tape 1 and the ring frame 20. The base film 11 is heated and contracted by applying warm air of 120 ° C., and the wafer processing tape 1 is tensioned. Thereafter, the adhesive layer 12 is subjected to radiation curing treatment or thermosetting treatment and the semiconductor chip C is picked up, whereby a semiconductor chip with an adhesive can be obtained.

  In the expanding process as described above, the adhesive film 13 is prevented from expanding (deformation) due to the expansion at the portion bonded to the back surface of the wafer W, and does not break. The tension due to the expansion of the tape 10 concentrates and breaks. According to the present invention, the tension at the time of expansion can be propagated to the adhesive film 13 while maintaining the splitting property of the adhesive film 13 in a high state, and the adhesive film 13 corresponds to each chip C. It can be divided well. At this time, if the elongation after heating is 120% or more, deflection occurs, and the conveyance to the pickup process cannot be performed smoothly. If the elongation after heating is 120% or less and the force applied when it is further increased to 120% is 2N or more, the space between the chips will be sufficiently expanded when expanded again in the pick-up process, and the pick-up success rate will be remarkable. improves.

  Next, examples of the present invention will be described, but the present invention is not limited to these examples.

The base sheet used and the pressure-sensitive adhesive layer composition are shown below.
Base sheet A: Ethylene-methacrylic acid copolymer base sheet B: Laminated base sheet C of ionomer resin copolymer and ethylene-methacrylic acid copolymer C: Ethylene-vinyl acetate resin copolymer base sheet D: Laminated substrate sheet E of PP and ethylene-vinyl acetate resin copolymer: ionomer resin copolymer (Zn cross-linked system)
Base sheet F: PP / elastomer (isoprene-based) copolymer base sheet G: PP / elastomer (butadiene-based) copolymer base sheet H: ionomer resin copolymer (Na cross-linked system)
Adhesive layer composition a: Acrylic radiation curable adhesive composition (Tg: −30 ° C.)
Adhesive layer composition b: acrylic radiation curable adhesive composition (Tg: -9 ° C)

Example 1
Example 1 A pressure-sensitive adhesive layer composition a dissolved in an organic solvent was applied to a base material sheet A (thickness 80 μm) so that the dry film thickness was 10 μm and dried at 110 ° C. for 3 minutes to produce a pressure-sensitive adhesive tape. A wafer processing tape was obtained.

(Example 2)
A wafer processing tape of Example 2 was produced in the same manner as in Example 1 except that the base sheet B (thickness: 80 μm) was used as the base sheet.

(Example 3)
A wafer processing tape of Example 3 was produced in the same manner as in Example 1 except that the base sheet C (thickness: 100 μm) was used as the base sheet.

(Example 4)
A wafer processing tape of Example 4 was produced in the same manner as in Example 1 except that the base sheet D (thickness: 100 μm) was used as the base sheet.

(Example 5)
A wafer processing tape of Example 5 was produced in the same manner as in Example 1 except that the base sheet E (thickness: 100 μm) was used as the base sheet.

(Example 6)
A wafer processing tape of Example 6 was produced in the same manner as in Example 1 except that the base sheet E (thickness 150 μm) was used as the base sheet.

(Example 7)
A wafer processing tape of Example 7 was produced in the same manner as in Example 6 except that the adhesive layer composition b was used as the adhesive layer composition.

(Example 8)
A wafer processing tape of Example 8 was produced in the same manner as in Example 1 except that the base sheet F (thickness: 100 μm) was used as the base sheet.

Example 9
A wafer processing tape of Example 9 was produced in the same manner as in Example 1 except that the base sheet E (thickness: 80 μm) was used as the base sheet.

(Comparative Example 1)
A wafer processing tape of Comparative Example 1 was produced in the same manner as in Example 1 except that the base sheet G (thickness: 100 μm) was used as the base sheet.

(Comparative Example 2)
A wafer processing tape of Comparative Example 2 was produced in the same manner as in Example 1 except that the base sheet H (thickness: 100 μm) was used as the base sheet.

<Elongation rate of wafer processing tape>
Using a tensile tester (JIS B 7721), the elongation percentage of the wafer processing tape was measured by the following tensile test at 25 ° C. or −10 ° C.

Elongation rate: A wafer processing tape was punched out in a No. 1 dumbbell shape (JIS K 6251) to prepare a test piece, and the elongation rate between marked lines at a distance between marked lines of 40 mm and a tensile speed of 1000 mm / min was measured.

  The elongation after heating to 100 ° C. was determined by measuring the distance between marked lines after placing the wafer processing tape, which had been extended to 200% by the above method, on a hot plate heated to 100 ° C. for 5 seconds.

  The results are shown in Table 1.

<Force applied during re-tensioning at 120% elongation after heat shrinkage>
According to the above method, after heating to 100 ° C., the force applied when it was pulled again at a pulling speed of 1000 mm / min was measured. The results are shown in Table 1.

<Dividability test of adhesive layer by expanding>
A semiconductor wafer (thickness 50 μm, diameter 300 mm) was irradiated with a laser beam to form a modified region inside the wafer. The wafer processing tapes of Examples 1 to 9 and Comparative Examples 1 and 2 in which an adhesive layer (adhesive film) was laminated in advance were laminated on the semiconductor wafer after laser irradiation and the stainless steel ring frame. Next, a resin expanded ring having an inner diameter of 330 mm was attached to the outer peripheral portion of the adhesive tape, the ring was fixed by an expanding device, and the adhesive tape was expanded under the following expanding conditions.
Expanding speed: 100mm / sec
Expanding amount: 20mm
Then, the adhesive tape was irradiated with ultraviolet rays, the adhesive layer of the adhesive tape was cured, and the adhesive strength was reduced.

<Method for evaluating the splitting property of the adhesive layer>
After the expansion, it was observed with an optical microscope whether or not the adhesive layer was divided together with the semiconductor wafer. The results are shown in Table 2. The severability shown in Table 2 is the percentage of the number of adhesive layers that were successfully severed with respect to the total number of chips. The total number of chips after laser processing is about 400, and the chip size is 10 mm × 10 mm.

<Pickup success rate> A pick-up test was conducted on 100 chips divided in the above-described expand dividing step using a die picker apparatus Canon Machinery Co., Ltd., trade name CAP-300II) to obtain a pickup success rate. The results are shown in Table 2.

In addition, as Reference Examples 1 and 2, a semiconductor wafer (thickness 50 μm, diameter 300 mm) was attached to the wafer processing tape of Example 6 and Comparative Example 1 in which an adhesive layer was previously laminated, and a dicing apparatus (manufactured by DISCO). After the semiconductor wafer and the adhesive layer were diced to a similar chip size of 10 mm × 10 mm by DAD-340), a pickup test was conducted. The results are shown in Table 2.

The dicing conditions are as follows.
Dicing speed: 50mm / sec
Rotational speed: 40000 rpm

  As shown in Tables 1 and 2, in the wafer processing tapes of Examples 1 to 8, the elongation at 25 ° C was 200% or more, the elongation at -10 ° C was 150% or more, and the elongation was After stretching to 200%, it is shrunk by heating to 100 ° C, the elongation becomes 120% or less, and the force applied when it is again stretched to 120% at 25 ° C is 2N or more. In the case of performing the expansion at -10 ° C., excellent expand dividing property, heat shrinkage property, and pickup property were exhibited.

  In the wafer processing tape of Example 9, the elongation at 25 ° C. is 200% or more, and after extending to 200% elongation, it is shrunk by heating to 100 ° C. and the elongation is 120% or less. The force applied when stretched again to 120% at 25 ° C is greater than 2N, but since the elongation at -10 ° C is less than 150%, an excellent expand is obtained when expanded at 25 ° C. Although the cutting property, shrinkage due to heat, and pick-up property were exhibited, when the expansion was performed at -10 ° C, the wafer processing tape was broken.

  In the tape for wafer processing of Comparative Example 1, the elongation at 25 ° C. is 200% or more and the elongation at −10 ° C. is 150% or more. After the elongation is increased to 200%, it is heated to 100 ° C. As a result, the expansion rate exceeds 120%, and the force applied when extending again to 120% at 25 ° C. is less than 2N. Therefore, the shrinkage due to heat is insufficient, and the pickup success rate is extremely low. It became.

  In the wafer processing tape of Comparative Example 2, the elongation at 25 ° C. is less than 200%, and the elongation at −10 ° C. is less than 150%. The force applied when stretched to 120% at 0 ° C. could not be measured. Further, the elongation at room temperature and low temperature was not sufficient, and the division by the expand was not good.

  In the wafer processing tape of Example 6, as shown in Reference Example 1, when blade dicing was performed, the pickup success rate was low. Conversely, in the wafer processing tape of Comparative Example 1, as shown in Reference Example 2, when blade dicing was performed, the pickup was 100% successful.

1: Wafer processing tape 10: Adhesive tape 11: Substrate sheet 12: Adhesive layer 13: Adhesive film 20: Ring frame 21: Stage 22: Push-up member 23: Area where the semiconductor chip C exists and the ring frame 20 Annular region 24 between: hot air nozzle

Claims (7)

When having a pressure-sensitive adhesive tape having a base film and a pressure-sensitive adhesive layer and expanding, by dividing the wafer bonded on the pressure-sensitive adhesive layer corresponding to each chip, or on the pressure-sensitive adhesive layer A wafer processing tape that is used when a bonded adhesive film and / or a wafer bonded to the adhesive film is cut in correspondence with individual chips, and shrinks when heated after expansion. ,
The adhesive tape has an elongation of 200% or more at 25 ° C., and after extending to an elongation of 200% or more at 25 ° C., the elongation is shrunk to 120% or less by heating to 100 ° C.
When the contracted adhesive tape punched out in No. 1 dumbbell shape (JIS K 6251) is stretched to 120% at 25 ° C. with a distance between marked lines of 40 mm and a tensile speed of 1000 mm / min, the force applied is 2N or more. A tape for wafer processing, characterized in that there is. The adhesive tape has an elongation at -10 ° C of 150% or more, extends to 200% elongation at 25 ° C, and shrinks to 120% or less by heating to 100 ° C.
When the contracted adhesive tape punched out in No. 1 dumbbell shape (JIS K 6251) is stretched to 120% at 25 ° C. with a distance between marked lines of 40 mm and a tensile speed of 1000 mm / min, the force applied is 2N or more. The wafer processing tape according to claim 1, wherein the tape is for wafer processing. The wafer processing tape is
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In the state which heated the semiconductor wafer at 70-80 degreeC, the process of bonding the adhesive film bonded by the said adhesive layer of the said tape for wafer processing on the back surface of the said semiconductor wafer,
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption inside the wafer;
(F) dividing the semiconductor wafer and the adhesive film along a dividing line by expanding the wafer processing tape, and obtaining a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
3. The method according to claim 1, further comprising: (h) a step of picking up the semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape. Wafer processing tape. The wafer processing tape is
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam along a dividing line from the surface of the semiconductor wafer to divide into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
3. The method according to claim 1, further comprising: (h) a step of picking up the semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape. Wafer processing tape. The wafer processing tape is
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) cutting the semiconductor wafer along a cutting line using a dicing blade, and cutting the semiconductor wafer into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
3. The method according to claim 1, further comprising: (h) a step of picking up the semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape. Wafer processing tape. The wafer processing tape is
(A) cutting a semiconductor wafer on which a circuit pattern is formed by using a dicing blade to a depth less than the thickness of the wafer along a predetermined cutting line;
(B) bonding a surface protection tape to the surface of the semiconductor wafer;
(C) a back grinding process in which the back surface of the semiconductor wafer is ground and divided into individual semiconductor chips;
(D) A step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor chip in a state where the semiconductor wafer is heated at 70 to 80 ° C .;
(E) peeling the surface protection tape from the semiconductor wafer surface;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion of the wafer processing tape that does not overlap the semiconductor chip, and maintaining the interval between the semiconductor chips;
3. The method according to claim 1, further comprising: (h) a step of picking up the semiconductor chip with an adhesive film from an adhesive layer of a wafer processing tape. Wafer processing tape.   The wafer processing tape according to any one of claims 2 to 6, wherein the tape is expanded at -15 ° C to 10 ° C.

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