JP2018056289A - Dicing-die bonding tape and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing-die bonding tape which allows an adhesive layer to be cut with good precision.SOLUTION: The disclosure hereof relates to a dicing die bonding tape comprising a separator, and a film including an adhesive layer and a base material layer. The adhesive layer is located between the separator and the base material layer. Opposing faces of the base material layer are defined by a first principal face in contact with the adhesive layer and a second principal face. In a wafer-fixing region of the film, the adhesive layer and the base material layer are 0.02 to 0.5 N/20 mm in 90-degrees peeling force at 23°C. In the wafer-fixing region, the adhesive layer and the base material layer are 0.1 N/20 mm or larger in 90-degrees peeling force at -15°C. As to the wafer-fixing region, a surface free energy of the first principal face in the base material layer is 32 to 39 mN/m.SELECTED DRAWING: Figure 1

Description

  The present disclosure relates to a dicing die bonding tape and a method for manufacturing a semiconductor device.

  A method of obtaining individual semiconductor chips (hereinafter sometimes referred to as “stealth dicing (registered trademark)”) by irradiating a laser beam to a division line of a semiconductor wafer to break the semiconductor wafer, or the surface of the semiconductor wafer (O There is a method of forming individual semiconductor chips (hereinafter referred to as “DBG (Dicing Before Grinding) method”) by grinding the back surface of the semiconductor wafer after forming grooves in the surface.

  In the stealth dicing or DBG method, a dicing die bonding tape may be used in the process. Some dicing die bonding tapes have a base material layer, an adhesive layer, and a separator, and the adhesive layer is located between the base material layer and the separator. There is also a dicing die bonding tape having a base material layer, an adhesive layer, an adhesive layer, and a separator. The former dicing die bonding tape can be manufactured at a lower cost than the latter dicing die bonding tape.

  In stealth dicing or the DBG method, the adhesive layer may be divided at a low temperature.

JP 2004-250572 A Japanese Patent No. 5305501

  An object of the present disclosure is to provide a dicing die bonding tape capable of accurately dividing an adhesive layer. An object of this indication is to provide the manufacturing method of a semiconductor device which can cut | disconnect an adhesive bond layer accurately.

  The present disclosure relates to a dicing die bonding tape including a separator and a film including an adhesive layer and a base material layer. The adhesive layer is located between the separator and the base material layer. Both surfaces of the base material layer are defined by a first main surface in contact with the adhesive layer and a second main surface. In the wafer fixing region of the film, the 90 ° peeling force at 23 ° C. in the adhesive layer and the base material layer is 0.02 N / 20 mm to 0.5 N / 20 mm. In the wafer fixing region, the 90 ° peeling force at −15 ° C. in the adhesive layer and the base material layer is 0.1 N / 20 mm or more. The surface free energy of the 1st main surface in a base material layer is 32-39 mN / m about a wafer fixed area | region.

Since the 90 ° peeling force at 23 ° C. in the adhesive layer and the base material layer is 0.02 N / 20 mm or more, the semiconductor wafer / semiconductor chip is removed from the adhesive layer in the process from fixing the semiconductor wafer to picking up the semiconductor chip. Hard to peel off. Since the 90 ° peeling force at −15 ° C. in the adhesive layer and the base material layer is 0.1 N / 20 mm or more, the adhesive layer can be accurately divided. It can be considered that the force is effectively transmitted to the adhesive layer. Since the 90 ° peeling force at 23 ° C. is 0.5 N / 20 mm or less, the semiconductor chip with the adhesive layer can be peeled off without difficulty after dividing the semiconductor wafer. The surface free energy E ₁ of the first main surface of the substrate layer is 32 mN / m or more, the substrate layer exhibits a good wettability to the adhesive layer.

  The present disclosure includes a step of removing a separator from a dicing die bonding tape, fixing a semiconductor wafer to an adhesive layer of the film, and applying a tensile stress to the film to form a semiconductor chip with the adhesive layer after dividing. The present invention relates to a method for manufacturing a semiconductor device.

1 is a schematic plan view of a dicing die bonding tape in Embodiment 1. FIG. It is a schematic sectional drawing of a part of dicing die-bonding tape in Embodiment 1. 6 is a schematic perspective view of a semiconductor device manufacturing process in Embodiment 1. FIG. 6 is a schematic cross-sectional view of the semiconductor device manufacturing process in Embodiment 1. FIG. 6 is a schematic cross-sectional view of the semiconductor device manufacturing process in Embodiment 1. FIG. 6 is a schematic cross-sectional view of the semiconductor device manufacturing process in Embodiment 1. FIG. 6 is a schematic cross-sectional view of the semiconductor device manufacturing process in Embodiment 1. FIG. 6 is a schematic cross-sectional view of the semiconductor device manufacturing process in Embodiment 1. FIG. 6 is a schematic cross-sectional view of the semiconductor device manufacturing process in Embodiment 1. FIG. 6 is a schematic cross-sectional view of the semiconductor device manufacturing process in Embodiment 1. FIG. 6 is a schematic cross-sectional view of the semiconductor device manufacturing process in Embodiment 1. FIG. It is a schematic sectional drawing of a part of dicing die-bonding tape in the modification 8. It is a schematic sectional drawing of a part of dicing die bonding tape in the modification 9. 10 is a schematic cross-sectional view of a part of a dicing die bonding tape in Modification 10. FIG.

  Embodiments are listed below and the present disclosure will be described in detail. However, the present disclosure is not limited to these embodiments.

Embodiment 1
As shown in FIG. 1, a dicing die bonding tape 1 includes a separator 11 and dicing die bonding films 12a, 12b, 12c,..., 12m (hereinafter collectively referred to as “dicing die bonding film 12”). The dicing die bonding tape 1 can have a roll shape. The separator 11 has a tape shape. The separator 11 is, for example, a peeled polyethylene terephthalate (PET) film. The dicing die bonding film 12 is located on the separator 11. The distance between the dicing die bonding film 12a and the dicing die bonding film 12b, the distance between the dicing die bonding film 12b and the dicing die bonding film 12c, ... The distance between the dicing die bonding film 12l and the dicing die bonding film 12m It is constant. The dicing die bonding film 12 has a disk shape.

  As shown in FIG. 2, the dicing die bonding film 12 includes a wafer fixing region 12A and a dicing ring fixing region 12B. The wafer fixing region 12A can have a disk shape, for example. The dicing ring fixing area 12B is located around the wafer fixing area 12A. The dicing ring fixing region 12B can have a donut plate shape, for example.

  The dicing die bonding film 12 includes an adhesive layer 121. The adhesive layer 121 has a disk shape. The thickness of the adhesive layer 121 is, for example, 2 μm or more, preferably 5 μm or more. The thickness of the adhesive layer 121 is, for example, 200 μm or less, preferably 150 μm or less, more preferably 100 μm or less, and further preferably 50 μm or less. Both surfaces of the adhesive layer 121 are defined by a first main surface and a second main surface facing the first main surface. The first main surface of the adhesive layer 121 is in contact with the separator 11. The adhesive layer 121 includes an adhesive layer first portion 121A that is at least dependent on the wafer fixing region 12A. The adhesive layer 121 includes an adhesive layer second portion 121B that is at least dependent on the dicing ring fixing region 12B. The adhesive layer 121 includes an adhesive layer third portion 121C positioned between the adhesive layer first portion 121A and the adhesive layer second portion 121B. The adhesive layer third part 121C connects the adhesive layer first part 121A and the adhesive layer second part 121B. The adhesive layer third portion 121C can have a donut plate shape, for example.

  The dicing die bonding film 12 includes a base material layer 122. The base material layer 122 has a disk shape. The thickness of the base material layer 122 is, for example, 50 μm or more, preferably 80 μm or more. The thickness of the base material layer 122 is, for example, 200 μm or less, preferably 170 μm or less. Both surfaces of the base material layer 122 are defined by a first main surface in contact with the adhesive layer 121 and a second main surface facing the first main surface. The first main surface of the base material layer 122 includes the first region 122A in the wafer fixing region 12A. The first area 122A is an area that has not been preprocessed. Pretreatment includes corona discharge treatment, plasma treatment, primer coating, peeling treatment, embossing, ultraviolet treatment, heat treatment, and the like. Examples of the release agent for the release treatment include a silicone-type release agent and a fluorine-type release agent. The first main surface of the base material layer 122 includes a second region 122B in the dicing ring fixing region 12B. The second region 122B is a region subjected to corona discharge treatment.

Wafer fixed region 12A surface free energy _{E 1} of the first main surface of the substrate layer 122 about is 32 mN / m or more. Since it is 32 mN / m or more, the base material layer 122 exhibits good wettability to the adhesive layer 121. The upper limit of E _1, for example 39 mN / m, preferably from 36 mN / m. When it is 39 mN / m or less, the adhesiveness of the base material layer 122 to the adhesive layer 121 is not too high, and thus the semiconductor chip with the adhesive layer can be peeled off without difficulty after the semiconductor wafer is divided.

Wafer fixed region 12A surface free energy _{E 2} of the second main surface of the adhesive layer 121 for preferably 33 mN / m or more, preferably 34 mN / m or more. The upper limit of the E ₂ are, for example, 50 mN / m, preferably from 45 mN / m.

  The surface free energy of the first main surface in the adhesive layer 121 for the wafer fixing region 12A is preferably 33 mN / m or more, preferably 34 mN / m or more. The adhesive bond layer 121 can be peeled from the separator 11 without difficulty as it is 33 mN / m or more. The upper limit of the surface free energy of the first main surface in the adhesive layer 121 is, for example, 50 mN / m, preferably 45 mN / m. The liquid for producing the adhesive bond layer 121 can be apply | coated to the separator 11 without difficulty as it is 50 mN / m or less.

The difference between E ₂ and E ₁ is preferably 15 mN / m or less, more preferably 13 mN / m or less. The difference between E ₂ and E ₁ is preferably ₁ mN / m or more. When it is less than 1 mN / m or exceeds 15 mN / m, the 90 ° peeling force at 23 ° C. in the adhesive layer 121 and the base material layer 122 tends to be too high.

  In the wafer fixing region 12A of the dicing die bonding film 12, the 90 ° peeling force at 23 ° C. in the adhesive layer 121 and the base material layer 122 is 0.02 N / 20 mm or more. Since it is 0.02 N / 20 mm or more, it is difficult for the semiconductor wafer / semiconductor chip to peel off from the adhesive layer 121 in the process from fixing the semiconductor wafer to picking up the semiconductor chip. When the 90 ° peeling force at 23 ° C. is 0.1 N / 20 mm or more, the adhesive layer 121 can be prevented from following the separator 11 when the separator 11 is removed from the dicing die bonding film 12. The upper limit of the 90 ° peeling force at 23 ° C. is 0.5 N / 20 mm, preferably 0.3 N / 20 mm. Since it is 0.5 N / 20 mm or less, the semiconductor chip with the adhesive layer can be peeled off without difficulty after the semiconductor wafer is divided.

  In the wafer fixing region 12A of the dicing die bonding film 12, the 90 ° peeling force at −15 ° C. in the adhesive layer 121 and the base material layer 122 is 0.1 N / 20 mm or more, preferably 0.3 N / 20 mm or more. . Since it is 0.1 N / 20 mm or more, an adhesive bond layer can be divided | segmented accurately. It can be considered that the force is effectively transmitted to the adhesive layer. The upper limit of the 90 ° peeling force at −15 ° C. is, for example, 10 N / 20 mm.

  The base material layer 122 is made of, for example, a polyether ether ketone film, a polyetherimide film, a polyarylate film, a polyethylene naphthalate film, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a chloride film. Vinyl copolymer film, polyethylene terephthalate film, polybutylene terephthalate film, polyurethane film, ethylene-vinyl acetate copolymer film (EVA film), ionomer resin film, ethylene- (meth) acrylic acid copolymer film, ethylene- ( Plastic fills such as (meth) acrylic acid ester copolymer film, polystyrene film and polycarbonate film It is possible to select from such as. Since the base material layer 122 desirably has a certain degree of stretchability, it is preferably a polyethylene film, a polypropylene film, an ethylene-vinyl acetate copolymer film, or an ionomer resin film.

  The storage elastic modulus at 23 ° C. in the adhesive layer 121 is preferably 10 GPa or less, more preferably 5 GPa or less. Adhesiveness with the base material layer 122 is high as it is 10 GPa or less, and it can suppress that peeling arises between the adhesive bond layer 121 and the base material layer 122 after parting. The lower limit of the storage elastic modulus at 23 ° C. is, for example, 1 MPa.

  The adhesive layer 121 includes a resin component. Examples of the resin component include a thermoplastic resin and a thermosetting resin. An example of the thermoplastic resin is an acrylic resin.

  The acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. And a polymer (acrylic copolymer). Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, and dodecyl group.

  In addition, the other monomer forming the polymer (acrylic copolymer) is not particularly limited, and for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid Or a carboxyl group-containing monomer such as crotonic acid, an acid anhydride monomer such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4 -Hydroxymethyl cycle Hexyl) -hydroxyl group-containing monomers such as methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate Alternatively, a sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate may be used.

  Among the acrylic resins, those having a weight average molecular weight of 100,000 or more are preferable, those having 300,000 to 3,000,000 are more preferable, and those having 500,000 to 2,000,000 are more preferable. It is because it is excellent in adhesiveness and heat resistance in this numerical range. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.

  The acrylic resin preferably contains a functional group. The functional group is, for example, a hydroxyl group, a carboxy group, a nitrile group or the like. A hydroxyl group and a carboxy group are preferred.

  The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, more preferably 20% by weight or more. When it is 10% by weight or more, flexibility is good. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 80% by weight or less, more preferably 70% by weight or less.

  Examples of the thermosetting resin include an epoxy resin and a phenol resin.

  The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type Bifunctional epoxy resins such as ortho-cresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., and epoxy resins such as hydantoin type, trisglycidyl isocyanurate type, or glycidylamine type are used. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance.

The epoxy equivalent of the epoxy resin is preferably 100 g / eq. Or more, more preferably 120 g / eq. That's it. The epoxy equivalent of the epoxy resin is preferably 1000 g / eq. Or less, more preferably 500 g / eq. It is as follows.
In addition, the epoxy equivalent of an epoxy resin can be measured by the method prescribed | regulated to JISK7236-2009.

  The phenol resin acts as a curing agent for the epoxy resin. For example, a novolak type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a nonylphenol novolak resin, or a resol type phenol resin. And polyoxystyrene such as polyparaoxystyrene. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The hydroxyl equivalent of the phenol resin is preferably 150 g / eq. Or more, more preferably 200 g / eq. That's it. The hydroxyl equivalent of the phenol resin is preferably 500 g / eq. Or less, more preferably 300 g / eq. It is as follows.

  The blending ratio of the epoxy resin and the phenol resin is preferably blended so that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of this range, the sufficient curing reaction does not proceed and the properties of the cured product are likely to deteriorate.

  The total content of the epoxy resin and the phenol resin in 100% by weight of the resin component is preferably 20% by weight or more, more preferably 30% by weight or more. The total content of the epoxy resin and the phenol resin is preferably 90% by weight or less, more preferably 80% by weight or less.

  The adhesive layer 121 can include an inorganic filler. Examples of inorganic fillers include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium , Solder, carbon and the like. Of these, silica, alumina, silver and the like are preferable, and silica is more preferable. The average particle diameter of the inorganic filler is preferably 0.001 μm to 1 μm. The average particle diameter of the filler can be measured by the following method. Adhesive layer 121 is put in a crucible and ignited by igniting at 700 ° C. for 2 hours in an air atmosphere. The obtained ash is dispersed in pure water and subjected to ultrasonic treatment for 10 minutes, and laser diffraction scattering particle size distribution. An average particle diameter is calculated | required using a measuring apparatus (The Beckman Coulter company make, "LS13320"; wet method).

  The content of the inorganic filler in the adhesive layer 121 is preferably 0% by weight or more, more preferably 1% by weight or more, still more preferably 3% by weight or more, and still more preferably 20% by weight or more. The content of the inorganic filler in the adhesive layer 121 is preferably 85% by weight or less, more preferably 20% by weight or less, and still more preferably 15% by weight or less.

  In addition to the above components, the adhesive layer 121 may appropriately contain a compounding agent generally used in film production, for example, a silane coupling agent, a curing accelerator, a crosslinking agent, and the like.

  The method of creating the dicing die bonding film 12 includes, for example, a step of performing a corona discharge treatment on the second region 122B of the base material layer 122 and a step of forming the adhesive layer 121 on the base material layer 122. Corona treatment is a surface treatment technique that modifies the surface of a substrate such as a plastic film, paper, or metal foil by corona discharge irradiation. When a dielectric is inserted between metal electrodes and a high frequency high voltage is applied, filamentary plasma called streamer corona is randomly formed between the electrodes in terms of time and space. High-energy electrons reach the surface layer of the polymer film that passes through the counter electrode side, and breaks the main chain and side chain of the polymer bond. The cut polymer surface layer is in a radical state, and oxygen radicals in the gas phase and the ozone layer are recombined with the main chain and side chains to introduce polar functional groups such as hydroxyl groups and carbonyl groups. Since hydrophilicity is imparted to the substrate surface, adhesion (wetability) to the hydrophobic polymer is improved, and the adhesive force is increased. When the introduced functional group and the adhesive layer 121 are chemically bonded, the adhesive force is further increased. The surface energy of the base material layer 122 after the corona discharge treatment is, for example, 30 dynes / cm or more, preferably 35 dynes / cm or more.

  There are two main methods for partially performing the corona treatment. The first is a method of protecting a part of the base material layer 122 with a mask (shielding object) so as not to be corona-treated. By disposing a mask between the base material layer 122 and the discharge electrode, a part of the base material layer 122 is shielded by the mask. The mask is made of, for example, a nonconductive material. A roll-shaped object having a plurality of masks, a long non-adhesive film having a plurality of masks, and a weakly adhesive tape having a plurality of masks can be used repeatedly. The second method is a method in which the base material layer 122 is passed between the discharge electrode and the dielectric roll having irregularities. In this method, only the convex portion can be modified. The dielectric roll includes, for example, a metal core and a dielectric layer wound around the metal core. The dielectric layer has irregularities. The distance between the recess and the electrode is preferably 2 mm or more. The dielectric layer can have, for example, insulation, conductivity, and corona discharge resistance. The dielectric layer is made of, for example, chlorine rubber, PET rubber, silicone rubber, or ceramic. The second method is simpler than the first. However, in the second method, the boundary between the corona-treated portion and the untreated portion tends to be more ambiguous than the first method.

  The dicing die bonding tape 1 can be used for manufacturing a semiconductor device.

  As shown in FIG. 3, a condensing point is set inside the pre-irradiation semiconductor wafer 4P, and the laser beam 100 is irradiated along the lattice-shaped division planned line 4L, thereby forming a modified region 41 on the pre-irradiation semiconductor wafer 4P. As a result, the semiconductor wafer 4 is obtained. Examples of the pre-irradiation semiconductor wafer 4P include a silicon wafer, a silicon carbide wafer, and a compound semiconductor wafer. Examples of compound semiconductor wafers include gallium nitride wafers.

The irradiation conditions of the laser beam 100 can be adjusted as appropriate within the range of the following conditions, for example.
(A) Laser beam 100
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repeat frequency 100 kHz or less
Pulse width 1μs or less
Output 1mJ or less
Laser light quality TEM00
Polarization characteristics Linearly polarized light (B) Condensing lens
Magnification 100 times or less
NA 0.55
Transmittance with respect to laser beam wavelength: 100% or less (C) Moving speed of table for placing semiconductor wafer before irradiation: 280 mm / sec or less

  As shown in FIG. 4, the semiconductor wafer 4 includes a modified region 41. The modified region 41 is more fragile than the other regions. The semiconductor wafer 4 further includes semiconductor chips 5A, 5B, 5C,.

As shown in FIG. 5, the separator 11 is removed from the dicing die bonding tape 1, and the dicing ring 31 and the semiconductor wafer 4 heated by the heating table are fixed to the dicing die bonding film 12 with a roll. The semiconductor wafer 4 is fixed to the wafer fixing region 12A. The semiconductor wafer 4 is fixed at, for example, 40 ° C. or higher, preferably 45 ° C. or higher, more preferably 50 ° C. or higher, and further preferably 55 ° C. or higher. The semiconductor wafer 4 is fixed, for example, at 100 ° C. or lower, preferably 90 ° C. or lower. The fixing pressure of the semiconductor wafer 4 is, for example, 1 × 10 ⁵ Pa to 1 × 10 ⁷ Pa. The roll speed is, for example, 10 mm / sec. The dicing ring 31 is fixed to the dicing ring fixing region 12B.

  As shown in FIG. 6, the dicing die bonding film 12 is pushed up by push-up means 33 positioned below the dicing die bonding film 12 to expand the dicing die bonding film 12. The expansion temperature is preferably 10 ° C. or lower, more preferably 0 ° C. or lower. The lower limit of the temperature is, for example, -20 ° C.

  The expansion of the dicing die bonding film 12 divides the semiconductor wafer 4 starting from the modified region 41 and also divides the adhesive layer 121. As a result, the semiconductor chip 5 </ b> A with the adhesive layer 121 </ b> A after division is formed on the base material layer 122.

  As shown in FIG. 7, the push-up means 33 is lowered. As a result, sagging occurs in the dicing die bonding film 12. The sagging occurs around the wafer fixing area 12A.

  As shown in FIG. 8, the dicing die bonding film 12 is pushed up and expanded by a suction table 32 positioned below the dicing die bonding film 12, and the dicing die bonding film 12 is sucked and fixed to the suction table 32 while maintaining the expansion.

  As shown in FIG. 9, the suction table 32 is lowered while the dicing die bonding film 12 is sucked and fixed to the suction table 32.

  With the dicing die bonding film 12 sucked and fixed to the suction table 32, hot air is applied to the slack of the dicing die bonding film 12 to remove the slack. The temperature of the hot air is preferably 170 ° C. or higher, more preferably 180 ° C. or higher. The upper limit of the hot air temperature is, for example, 240 ° C., preferably 220 ° C.

  After dividing, the semiconductor chip 5A with the adhesive layer 121A is peeled off from the base material layer 122.

  As shown in FIG. 10, the divided semiconductor chip 5 </ b> A with the adhesive layer 121 </ b> A is pressure-bonded to the adherend 6. The pressure bonding is performed, for example, at 80 ° C. or higher, preferably 90 ° C. or higher. For example, it is performed at 150 ° C. or lower, preferably 130 ° C. or lower. The adherend 6 is, for example, a lead frame, an interposer, a TAB film, or a semiconductor chip. The adherend 6 has a terminal portion.

By heating the adherend 6 with the semiconductor chip 5A in a pressurized atmosphere, the adhesive layer 121 is cured after the division. The pressurized atmosphere is, for example, 0.5 kg / cm ² (4.9 × 10 ⁻² MPa) or more, preferably 1 kg / cm ² (9.8 × 10 ⁻² MPa) or more, more preferably 5 kg / cm ² ( 4.9 × 10 ⁻¹ MPa) or more. For example, heating is performed at 120 ° C. or higher, preferably 150 ° C. or higher, more preferably 170 ° C. or higher. An upper limit is 260 degreeC, 200 degreeC, 180 degreeC etc., for example.

  As shown in FIG. 11, the electrode pad of the semiconductor chip 5 </ b> A and the terminal portion of the adherend 6 are electrically connected by a bonding wire 7, and the semiconductor chip 5 </ b> A is sealed with a sealing resin 8.

  The semiconductor device obtained by the above method includes the semiconductor chip 5A, the adherend 6 and the post-dicing adhesive layer 121. The dicing adhesive layer 121 bonds the semiconductor chip 5A and the adherend 6 together. The semiconductor device further includes a sealing resin 8 that covers the semiconductor chip 5A.

  As described above, the semiconductor device manufacturing method includes the steps of fixing the semiconductor wafer 4 to the adhesive layer 121 of the dicing die bonding film 12 except for the separator 11 from the dicing die bonding tape 1 and the tensile stress applied to the dicing die bonding film 12. And forming a semiconductor chip 5A with an adhesive layer 121A after dividing.

Modification 1
The second region 122B is a region where a primer is applied after the corona discharge treatment.

  It is desirable that the primer and the base material layer 122 are chemically bonded. As the primer, a material that can be chemically bonded to the base material layer 122 and can exhibit a strong adhesive force to the adhesive layer second portion 121B is preferable. The primer includes, for example, a crosslinking agent and a polymer. Examples of the crosslinking agent for the primer include an isocyanate crosslinking agent and an epoxy crosslinking agent. From the viewpoint of being able to react at a low temperature in a short time, an isocyanate-based crosslinking agent and an epoxy-based crosslinking agent are preferable. The polymer of the primer can have a functional group capable of reacting with the crosslinking agent. The functional group is, for example, a hydroxyl group. The thickness of the primer is, for example, 1 μm.

Modification 2
The first region 122A is a region that has been subjected to corona discharge treatment.

  The method for producing the dicing die bonding film 12 includes, for example, a step of performing corona discharge treatment on the base material layer 122 and a step of forming the adhesive layer 121 on the base material layer 122. In the step of performing the corona discharge treatment on the base material layer 122, the strength of the corona discharge treatment in the first region 122A can be made lower than the strength of the corona discharge treatment in the second region 122B. The strength of the corona discharge treatment in the first region 122A can be the same as the strength of the corona discharge treatment in the second region 122B. In this case, the adhesive layer first portion 121A preferably contains a release agent. Examples of the release agent include fluorine-based, silicone-based, and oil-based release agents. On the other hand, it is preferable that the adhesive layer second portion 121B does not contain such a release agent.

Modification 3
The first region 122A is a region where a primer is applied after the corona discharge treatment.

  It is preferable that both the polarity of the primer and the polarity of the adhesive layer first portion 121A are greatly different. The surface energy of the primer is, for example, 5 dynes / cm or more and less than 30 dynes / cm. The surface energy of the adhesive layer first portion 121A is, for example, more than 30 dynes / cm and 50 dynes / cm or less. If the modulus of elasticity of the primer is low, the peeling force between the adhesive layer first part 121A and the base material layer 122 may be too high. Therefore, the suitable modulus of elasticity of the primer at room temperature is, for example, 100 MPa or more. . Modification 1 applies mutatis mutandis to a suitable example of the primer.

  The strength of the corona discharge treatment in the first region 122A can be the same as the strength of the corona discharge treatment in the second region 122B. Both may be different.

Modification 4
The first main surface of the base material layer 122 is a surface coated with a primer after the corona discharge treatment.

  The strength of the corona discharge treatment in the first region 122A can be the same as the strength of the corona discharge treatment in the second region 122B. Both may be different. Modification 1 applies mutatis mutandis to a suitable example of the primer.

Modification 5
The first area 122A is an embossed area.

Modification 6
The second area 122B is an embossed area.

Modification 7
The first main surface of the base material layer 122 is an embossed surface.

Modification 8
As shown in FIG. 12, the adhesive layer 121 includes an adhesive layer first part 121A and an adhesive layer second part 121B, and does not include an adhesive layer third part 121C. The adhesive layer first portion 121A has, for example, a disk shape. The adhesive layer second portion 121B has, for example, a donut plate shape. The adhesive layer second part 121B is not in contact with the adhesive layer first part 121A.

  The composition / physical properties of the adhesive layer second part 121B may be different from the composition / physical properties of the adhesive layer first part 121A. As a suitable example of the composition and physical properties of the adhesive layer first part 121A, Example 1 is applied mutatis mutandis. The adhesive layer second part 121B preferably has adhesiveness. Examples of the pressure-sensitive adhesive constituting the adhesive layer second part 121B include known acrylic, rubber-based, vinyl alkyl ether-based, silicone-based, polyester-based, polyamide-based, urethane-based, and styrene-diene block copolymer systems. These pressure-sensitive adhesives can be used alone or in combination of two or more.

  The adhesive layer second part 121B preferably includes a crosslinking agent capable of reacting with a functional group such as a hydroxyl group or a carboxylic acid group in the second region 122B subjected to the corona discharge treatment, and a resin component.

  The resin component preferably contains a thermoplastic resin having a functional group capable of reacting with the crosslinking agent. This is because the adhesive layer second part 121B and the base material layer 122 can be chemically bonded. Examples of the functional group of the thermoplastic resin include a hydroxyl group, a carboxylic acid group, an epoxy group, an amine group, a thiol group, and a phenol group. As the thermoplastic resin, an acrylic polymer is preferable from the viewpoint of adjusting the functional group. Examples of the acrylic polymer include (meth) methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, octyl (meth) acrylate, and the like. A homo- or copolymer of (meth) acrylic acid alkyl ester such as C1-C20 acrylic acid acrylic acid; (meth) acrylic acid alkyl ester and other copolymerizable monomers--for example, acrylic acid, methacrylic acid, itaconic acid, Carboxyl group or acid anhydride group-containing monomer such as fumaric acid and maleic anhydride; Hydroxyl group-containing monomer such as 2-hydroxyethyl (meth) acrylate; Amino group-containing monomer such as morpholyl acrylate (meth); Amide group-containing monomers such as acrylamide; (meth) acrylo And a copolymer with a cyano group-containing monomer such as nitrile; and a (meth) acrylic acid ester having an alicyclic hydrocarbon group such as isobornyl (meth) acrylate. The content of the resin component in the adhesive layer second part 121B is, for example, 94% by weight or more, preferably 95% by weight or more. The content of the resin component in the adhesive layer second part 121B is, for example, 99.99% by weight or less, preferably 99.97% by weight or less.

  Examples of the crosslinking agent include an isocyanate crosslinking agent, an epoxy crosslinking agent, an oxazoline crosslinking agent, and a peroxide. A crosslinking agent can be used alone or in combination of two or more. Isocyanate-based crosslinking agents and epoxy-based crosslinking agents are preferred. Examples of the isocyanate-based crosslinking agent include aromatic isocyanates such as tolylene diisocyanate and xylene diisocyanate, alicyclic isocyanates such as isophorone diisocyanate, and aliphatic isocyanates such as hexamethylene diisocyanate. More specifically, for example, lower aliphatic polyisocyanates such as butylene diisocyanate and hexamethylene diisocyanate, alicyclic isocyanates such as cyclopentylene diisocyanate, cyclohexylene diisocyanate and isophorone diisocyanate, 2,4-tolylene diisocyanate, Aromatic diisocyanates such as 4,4′-diphenylmethane diisocyanate, xylylene diisocyanate, polymethylene polyphenyl isocyanate, trimethylolpropane / tolylene diisocyanate trimer adduct (trade name Coronate L, manufactured by Nippon Polyurethane Industry Co., Ltd.), tri Methylolpropane / hexamethylene diisocyanate trimer adduct (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name Coronate HL), hexamethylene dii Isocyanurate of cyanate (Nippon Polyurethane Industry Co., Ltd., trade name Coronate HX) and other isocyanate adducts, xylylene diisocyanate trimethylolpropane adduct (Mitsui Chemicals, trade name D110N), hexamethylene diisocyanate trimethylolpropane Additives (Mitsui Chemicals, trade name D160N); polyether polyisocyanate, polyester polyisocyanate, adducts of these with various polyols, polyfunctionalized polyisocyanate, burette, allophanate, etc. An isocyanate etc. can be mentioned. Of these, it is preferable to use an aliphatic isocyanate because of its high reaction rate. An isocyanate type crosslinking agent may be used individually by 1 type, and may mix and use 2 or more types. The content of the isocyanate-based crosslinking agent in the adhesive layer second part 121B is, for example, 0.01 to 5 parts by weight, preferably 0.03 to 4 parts by weight with respect to 100 parts by weight of the resin component. It can be appropriately contained in consideration of cohesive force and prevention of peeling in a durability test.

  The adhesive layer 121 can be formed by screen printing, rotary screen printing, ink jet printing, gravure printing, roll to roll, or the like. Rotary screen printing is preferred from the viewpoint of productivity. These coating methods can use only 1 type and can also be used in combination. In these methods, the varnish may be exposed to the air during coating. It is preferable to use a low-volatile solvent that can suppress a change in the varnish concentration during coating. Such solvents are, for example, MIBK, butyl acetate, cyclohexanone, γ-butyrolactone, isophorone, carbitol acetate, DMSO, DMAc, NMP and the like.

Modification 8.1
The second region 122B is a region where a primer is applied after the corona discharge treatment. Modification 8.1 is a combination of Modification 8 and Modification 1. As a suitable example of the modification 8.1, the modification 1 is applied mutatis mutandis.

Modification 8.2
The first region 122A is a region that has been subjected to corona discharge treatment. Modification 8.2 is a combination of Modification 8 and Modification 2. As a suitable example of the modification 8.2, the modification 2 is applied mutatis mutandis.

Modification 8.3
The first region 122A is a region where a primer is applied after the corona discharge treatment. Modification 8.3 is a combination of Modification 8 and Modification 3. As a suitable example of the modification 8.3, the modification 3 is applied mutatis mutandis.

Modification 8.4
The first main surface of the base material layer 122 is a surface coated with a primer after the corona discharge treatment. Modification 8.4 is a combination of Modification 8 and Modification 4. As a suitable example of the modification 8.4, the modification 4 is applied mutatis mutandis.

Modification 8.5
The first area 122A is an embossed area. Modification 8.5 is a combination of Modification 8 and Modification 5.

Modification 8.6
The second area 122B is an embossed area. Modification 8.6 is a combination of Modification 8 and Modification 6.

Modification 8.7
The first main surface of the base material layer 122 is an embossed surface. Modification 8.7 is a combination of Modification 8 and Modification 7.

Modification 9
As shown in FIG. 13, the adhesive layer 121 includes a first layer 1211 and a second layer 1212. The first layer 1211 has a disk shape. Both surfaces of the first layer 1211 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the first layer 1211 is in contact with the separator 11. The second main surface of the first layer 1211 is in contact with the second layer 1212. The second layer 1212 has a disk shape. Both surfaces of the second layer 1212 are defined by a first main surface and a second main surface facing the first main surface. The first main surface of the second layer 1212 is in contact with the first layer 1211. The second main surface of the second layer 1212 is in contact with the base material layer 122.

Modification 9.1
The second region 122B is a region where a primer is applied after the corona discharge treatment. Modification 9.1 is a combination of Modification 9 and Modification 1. A preferred example of the modification 9.1 applies the modification 1 mutatis mutandis.

Modification 9.2
The first region 122A is a region that has been subjected to corona discharge treatment. Modification 9.2 is a combination of Modification 9 and Modification 2. A suitable example of the modification example 9.2 applies the modification example 2 mutatis mutandis.

Modification 9.3
The first region 122A is a region where a primer is applied after the corona discharge treatment. Modification 9.3 is a combination of Modification 9 and Modification 3. As a suitable example of the modification 9.3, the modification 3 is applied mutatis mutandis.

Modification 9.4
The first main surface of the base material layer 122 is a surface coated with a primer after the corona discharge treatment. Modification 9.4 is a combination of Modification 9 and Modification 4. As a suitable example of the modification 9.4, the modification 4 is applied mutatis mutandis.

Modification 9.5
The first area 122A is an embossed area. The modification 9.5 is a combination of the modification 9 and the modification 5.

Modification 9.6
The second area 122B is an embossed area. Modification 9.6 is a combination of Modification 9 and Modification 6.

Modification 9.7
The first main surface of the base material layer 122 is an embossed surface. Modification 9.7 is a combination of Modification 9 and Modification 7.

Modification 10
As shown in FIG. 14, the adhesive layer 121 includes a first layer 1211 and a second layer 1212. The first layer 1211 has a donut plate shape. The first layer 1211 is located in the dicing ring fixing region 12B. Both surfaces of the first layer 1211 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the first layer 1211 is in contact with the separator 11. The second main surface of the first layer 1211 is in contact with the second layer 1212. The first layer 1211 can have adhesiveness. The second layer 1212 has a disk shape. Both surfaces of the second layer 1212 are defined by a first main surface and a second main surface facing the first main surface. The first main surface of the second layer 1212 is in contact with the first layer 1211 in the dicing ring fixing region 12B. The second main surface of the second layer 1212 is in contact with the base material layer 122.

Modification 10.1
The second region 122B is a region where a primer is applied after the corona discharge treatment. Modification 10.1 is a combination of Modification 10 and Modification 1. As a suitable example of the modification 10.1, the modification 1 is applied mutatis mutandis.

Modification 10.2
The first region 122A is a region that has been subjected to corona discharge treatment. Modification 10.2 is a combination of Modification 10 and Modification 2. A suitable example of Modification Example 10.2 applies mutatis mutandis.

Modification 10.3
The first region 122A is a region where a primer is applied after the corona discharge treatment. Modification 10.3 is a combination of Modification 10 and Modification 3. A suitable example of Modification Example 10.3 applies Modification Example 3 mutatis mutandis.

Modification 10.4
The first main surface of the base material layer 122 is a surface coated with a primer after the corona discharge treatment. Modification 10.4 is a combination of Modification 10 and Modification 4. As a suitable example of Modification Example 10.4, Modification Example 4 applies mutatis mutandis.

Modification 10.5
The first area 122A is an embossed area. Modification 10.5 is a combination of Modification 10 and Modification 5.

Modification 10.6
The second area 122B is an embossed area. Modification 10.6 is a combination of Modification 10 and Modification 6.

Modification 10.7
The first main surface of the base material layer 122 is an embossed surface. Modification 10.7 is a combination of Modification 10 and Modification 7.

Modification 11
In the modification 11, the dicing die bonding tape 1 is used for the DBG method. Specifically, a step of fixing a semiconductor wafer having a groove provided on the surface of the semiconductor wafer to the back grind film and grinding the back surface of the semiconductor wafer, and separating the separator 11 from the dicing die bonding tape 1 Except for the step of fixing the ground semiconductor wafer to the adhesive layer 121 of the dicing die bonding film 12, and the step of applying tensile stress to the dicing die bonding film 12 to form the semiconductor chip with the adhesive layer after cutting. Including.

  These modifications can be combined with other modifications.

  Hereinafter, the present disclosure will be described in detail using examples. However, the present disclosure is not limited to the following examples unless it exceeds the gist.

Preparation of dicing die bonding films in Examples 1 to 4 and Comparative Examples 2 to 3 Acrylic polymer, silica filler, solid epoxy resin and solid phenol resin were dissolved or dispersed in methyl ethyl ketone according to Table 1, and applied to a PET separator. Methyl ethyl ketone was skipped at 130 ° C. for 2 minutes to obtain an adhesive film having a thickness of 10 μm. A 130 μm thick EVA film manufactured by Kurashiki Boseki Co., Ltd. was subjected to corona discharge treatment under the conditions shown in Table 1 using a corona processing machine (500 series manufactured by PILLAR TECHNOLOGIES). The adhesive film was laminated | stacked on the EVA film after a corona treatment at 60 degreeC, 10 mm / sec, and 0.15 MPa, and the dicing die-bonding film of Examples 1-4 and Comparative Examples 2-3 was obtained. Each dicing die bonding film has an EVA film and an adhesive film located on the EVA film. Both sides of the EVA film are defined by a first main surface in contact with the adhesive film and a second main surface opposite to the first main surface. Both surfaces of the adhesive film are defined by a first main surface and a second main surface in contact with the EVA film. Each dicing die bonding film has a disk shape. In each dicing die bonding film, a dicing ring fixing region is located around the wafer fixing region.

Corona treatment amount The corona treatment amount is expressed by the following equation.
Discharge treatment amount (W · min / m ² ) = discharge electrode voltage (W) ÷ electrode width (m) ÷ speed (m / min)

Production of Dicing Die Bonding Film in Comparative Example 1 A dicing die bonding film was produced in the same procedure as in Example 1 except that the EVA film was not subjected to corona discharge treatment.

90 degree peeling force between adhesive film and EVA film A dicing die bonding film test with a length of 120 mm x width of 50 mm was applied to the adhesive film of the dicing die bonding film with a backing tape (BT-315 manufactured by Nitto Denko Corporation) at room temperature of 23 ° C. A piece was cut out. A chamber of Autograph AGS-J (manufactured by Shimadzu Corporation) was adjusted to 23 ° C. or −15 ° C., and a T peel test was performed at a peeling angle of 90 ° and a peeling speed of 300 mm / min. The average value of the peeling force is shown in Table 1.

Surface Free Energy A backing tape (BT-315 manufactured by Nitto Denko Corporation) was attached to the adhesive film of the dicing die bonding film at room temperature of 23 ° C. and 50 ± 10% RH, and the adhesive film was peeled off from the EVA film. A series of test liquid mixtures with stepwise increasing surface tension prepared according to JIS K 6768: 1999 was dropped within 5 minutes after peeling off the first main surface of the EVA film and the second main surface of the adhesive film. Then, a liquid film having a length of about 5 cm was formed by spreading with a spatula having a width of 10 mm, the liquid film was observed after 2 seconds, and a test liquid mixture was selected that maintains the shape of the liquid film accurately for 2 seconds. Table 1 shows the surface tension of the selected test liquid mixture.

Splitting / Pickup Properties Using a DISCO dicing machine (DFD6361), a 12-inch bare wafer was cut into 8 mm × 12 mm with a width of 20 to 25 μm and a depth of 50 μm. A back grind tape (UB-3083D manufactured by Nitto Denko Corporation) was attached to the cut surface, and grinding was performed with a back grinder (DGP8760) manufactured by DISCO until the bare wafer thickness became 20 μm. After grinding, the wafer was bonded to an adhesive film of a dicing die bonding film with a laminator at 60 ° C., 0.15 MPa, 10 mm / sec. A dicing ring was fixed to the adhesive film of the dicing die bonding film with a laminator at 60 ° C., 0.15 MPa, and 10 mm / sec. The back grind tape is peeled off from the wafer after grinding, and the wafer is cut using a cool expander (DDS3200 manufactured by DISCO) at a cooling temperature of −15 ° C., a speed of 1 mm / sec, and a stretching amount of 11 mm. The film was stretched with a heating table at a temperature of 1 ° C., a speed of 1 mm / sec, and a stretch amount of 7 mm, and was heat-shrinked at 200 ° C. By the above means, the chip | tip with an adhesive film was formed after parting. In order to confirm whether the adhesive film after cutting was cut along the cutting line, 30 chips with adhesive film after cutting were observed in each example. The dividing rate is obtained by the following formula, the dividing rate is 80% or more as ◯, less than 80% as x, and the determination results are shown in Table 1.
Dividing rate = number of chips having an adhesive film after dividing along the dividing line / 30

Pickup property 10 chips with adhesive film after separation were picked up by a die bonder SPA300 manufactured by Shinkawa, and the success number was 8 or more, and the case of less than 8 was ×.

Claims (5)

A separator;
A film comprising an adhesive layer and a substrate layer,
The adhesive layer is located between the separator and the substrate layer;
In the wafer fixing region of the film, the 90 ° peeling force at 23 ° C. in the adhesive layer and the base material layer is 0.02 N / 20 mm to 0.5 N / 20 mm,
In the wafer fixing region, a 90 ° peeling force of −15 ° C. in the adhesive layer and the base material layer is 0.1 N / 20 mm or more,
Both surfaces of the base material layer are defined by a first main surface in contact with the adhesive layer and a second main surface,
The surface free energy of the first principal surface in the base material layer in the wafer fixing region is 32 to 39 mN / m.
Dicing die bonding tape. Both surfaces of the adhesive layer are defined by a first main surface in contact with the separator and a second main surface in contact with the base material layer,
The surface free energy of the second major surface of the adhesive layer and E ₂ for the wafer fixing region,
When the surface free energy of the first major surface of the base layer and E ₁ for said wafer fixing region,
The difference between E ₂ and E ₁ is 15 mN / m or less,
The dicing die bonding tape according to claim 1. Both surfaces of the adhesive layer are defined by a first main surface in contact with the separator and a second main surface in contact with the base material layer,
The surface free energy of the second main surface of the adhesive layer in the wafer fixing region is 34 to 50 mN / m.
The dicing die bonding tape according to claim 1.   The dicing die bonding tape according to any one of claims 1 to 3, wherein a storage elastic modulus at 23 ° C in the adhesive layer is 10 GPa or less. Removing the separator from the dicing die bonding tape according to any one of claims 1 to 4, and fixing the semiconductor wafer to the adhesive layer of the film;
Applying a tensile stress to the film, and forming a semiconductor chip with an adhesive layer after splitting. A method for manufacturing a semiconductor device.

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