TW201819175A - Dicing die bonding tape and fabrication method of semiconductor device capable of dividing an adhesive layer with high precision - Google Patents

Abstract

The purpose of the present invention is to provide a dicing die bonding tape capable of dividing an adhesive layer with high precision. The present invention relates to a dicing die-bonding tape comprising: an isolation film and a film including an adhesive layer and a substrate layer. The adhesive layer is located between the isolation film and the substrate layer. Two surfaces of the substrate layer are defined as a first main surface contacting the adhesive layer and a second main surface. In the wafer-fixing region of the film, the 90 degree peeling force at 23 DEG C between the adhesive layer and the substrate layer is 0.02 N/20 mm to 0.5 N/20 mm. In the wafer-fixing region, the 90 degree peeling force at -15 DEG C between the adhesive layer and the substrate layer is 0.1 N/20 mm or more. In the wafer-fixing region, the surface free energy of the first main surface of the substrate layer is 32 to 39 mN/m.

Description

Cut crystal sticky tape and manufacturing method of semiconductor device

The present invention relates to a method for manufacturing a cut crystal sticky tape and a semiconductor device.

There is a method of irradiating laser light on a predetermined division line of a semiconductor wafer to break the semiconductor wafer to obtain a single semiconductor wafer (hereinafter sometimes referred to as "Stealth Dicing (registered trademark)"), or by A method for forming a single semiconductor wafer by grinding the surface of the semiconductor wafer (outer surface) and grinding the back surface of the semiconductor wafer to form a single semiconductor wafer (hereinafter referred to as "DBG (Dicing Before Grinding) method"). In the invisible dicing or DBG method, a dicing tape is sometimes used in the process. The cut crystal sticky crystal has a structure having a substrate layer, an adhesive layer, and a release film, and the adhesive layer is located between the substrate layer and the release film. There is also a die-cut adhesive tape having a substrate layer, an adhesive layer, an adhesive layer, and a release film. The former crystal-bonded band can be manufactured at a lower cost than the latter crystal-bonded band. In the invisible slicing or the DBG method, the adhesive layer may be cut at a low temperature. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2004-250572 [Patent Literature 2] Japanese Patent No. 5305501

[Problems to be Solved by the Invention] An object of the present invention is to provide a die-bonding band capable of accurately cutting an adhesive layer. An object of the present invention is to provide a method for manufacturing a semiconductor device capable of accurately cutting an adhesive layer. [Technical means to solve the problem] The present invention relates to a cut crystal and sticky crystal tape, which includes a separation film and a film including an adhesive layer and a substrate layer. The adhesive layer is located between the release film and the substrate layer. Both surfaces of the base material layer are defined by a first main surface and a second main surface that are in contact with the adhesive layer. In the wafer fixed area of the film, the 90 degree peel force of the adhesive layer and the substrate layer at 23 ° C is 0.02 N / 20 mm to 0.5 N / 20 mm. In the wafer fixing area, the 90 degree peel force of the adhesive layer and the substrate layer at -15 ° C is 0.1 N / 20 mm or more. In the wafer fixing area, the surface free energy of the first main surface of the base material layer is 32 to 39 mN / m. Since the 90 degree peel force of the adhesive layer and the substrate layer at 23 ° C is 0.02 N / 20 mm or more, the semiconductor wafer / semiconductor wafer is in the process from the fixing of the semiconductor wafer to the pickup of the semiconductor wafer Difficult to peel from the adhesive layer. Since the 90 degree peel force of the adhesive layer and the substrate layer at -15 ° C is 0.1 N / 20 mm or more, the adhesive layer can be accurately separated. The reason is considered to be that the force is effectively transmitted to the adhesive layer. Since the 90-degree peel force at 23 ° C is 0.5 N / 20 mm or less, the semiconductor wafer with the adhesive layer can be easily peeled off after the semiconductor wafer is broken. Since the surface free energy E ₁ of the first main surface of the base material layer is 32 mN / m or more, the base material layer exhibits good wettability to the adhesive layer. The invention relates to a method for manufacturing a semiconductor device, which includes the following steps: removing an isolation film from a cut crystal sticky tape, fixing a semiconductor wafer to an adhesive layer of the film; and applying tensile stress to the film to form an additional break A semiconductor wafer followed by an agent layer.

The present invention will be described in detail below with reference to the embodiments, but the present invention is not limited to these embodiments. Embodiment 1 As shown in FIG. 1, the cut crystal sticky tape 1 includes an isolation film 11 and cut crystal sticky films 12 a, 12 b, 12 c,..., 12 m (hereinafter collectively referred to as “cut crystal sticky film 12”). The cut crystal sticky tape 1 may be in a roll shape. The separator 11 has a band shape. The separator 11 is, for example, a polyethylene terephthalate (PET) film or the like subjected to a peeling treatment. The cut crystal and sticking film 12 is located on the isolation film 11. The distance between the cut crystal sticky film 12a and the cut crystal sticky film 12b, the distance between the cut crystal sticky film 12b and the cut crystal sticky film 12c, ... the cut crystal sticky film 12l and the cut crystal sticky film The distance between 12m is fixed. The cut crystal sticky film 12 has a disc shape. As shown in FIG. 2, the dicing die-bonding film 12 includes a wafer fixing region 12A and a dicing ring fixing region 12B. The wafer fixing region 12A may have a disk shape, for example. The dicing ring fixing region 12B is located around the wafer fixing region 12A. The cut-crystal-ring fixing region 12B may be, for example, an annular plate. The cut crystal die-bonding film 12 includes an adhesive layer 121. The adhesive layer 121 has a disc shape. The thickness of the adhesive layer 121 is, for example, 2 μm or more, and preferably 5 μm or more. The thickness of the adhesive layer 121 is, for example, 200 μm or less, preferably 150 μm or less, further preferably 100 μm or less, and even more preferably 50 μm or less. Both surfaces of the adhesive layer 121 are defined by a first main surface and a second main surface facing the first main surface. The first main surface of the adhesive layer 121 is in contact with the separation film 11. The adhesive layer 121 includes a first adhesive layer 121A that belongs to at least the wafer fixing region 12A. The adhesive layer 121 includes a second portion 121B of the adhesive layer which belongs to at least the crystal ring fixing region 12B. The adhesive layer 121 includes a third adhesive layer 121C located between the first adhesive layer 121A and the second adhesive layer 121B. The third adhesive layer 121C is connected to the first adhesive layer 121A and the second adhesive layer 121B. The third layer 121C of the adhesive layer may have, for example, an annular plate shape. The cut crystal die-bonding film 12 includes a substrate layer 122. The base material layer 122 has a disk shape. The thickness of the base material layer 122 is, for example, 50 μm or more, and preferably 80 μm or more. The thickness of the base material layer 122 is, for example, 200 μm or less, and preferably 170 μm or less. Both surfaces of the base material layer 122 are defined by a first main surface in contact with the adhesive layer 121 and a second main surface facing the first main surface. The first main surface of the base material layer 122 includes a first region 122A in the wafer fixing region 12A. The first area 122A is an area where no pre-processing is performed. The pre-treatment is corona discharge treatment, plasma treatment, primer coating, peeling treatment, embossing, ultraviolet treatment, heat treatment, and the like. Examples of the release agent used for the release treatment include a silicone-based release agent and a fluorine-based release agent. The first main surface of the base material layer 122 includes a second region 122B in the dicing ring fixing region 12B. The second region 122B is a region subjected to a corona discharge treatment. Surface free energy E of the first main surface of the base material layer 122 in the wafer fixing region 12A ₁ It is 32 mN / m or more. Since it is 32 mN / m or more, the base material layer 122 exhibits good wettability to the adhesive layer 121. E ₁ The upper limit is, for example, 39 mN / m, and preferably 36 mN / m. If it is 39 mN / m or less, since the adhesiveness of the base material layer 122 to the adhesive layer 121 is not too high, the semiconductor wafer with the adhesive layer can be easily peeled off after the semiconductor wafer is broken. Surface free energy E of the second main surface of the adhesive layer 121 in the wafer fixing region 12A ₂ It is preferably 33 mN / m or more, and more preferably 34 mN / m or more. E ₂ The upper limit is, for example, 50 mN / m, and preferably 45 mN / m. The surface free energy of the first main surface of the adhesive layer 121 in the wafer fixing region 12A is preferably 33 mN / m or more, and more preferably 34 mN / m or more. If it is 33 mN / m or more, the adhesive layer 121 can be easily peeled from the separator 11. The upper limit of the surface free energy of the first main surface of the adhesive layer 121 is, for example, 50 mN / m, and preferably 45 mN / m. If it is 50 mN / m or less, the liquid for producing the adhesive layer 121 can be easily applied to the separator 11. E ₂ With E ₁ The difference is preferably 15 mN / m or less, and more preferably 13 mN / m or less. E ₂ With E ₁ The difference is preferably 1 mN / m or more. When it is less than 1 mN / m or exceeds 15 mN / m, the 90 degree peel force of the adhesive layer 121 and the base material layer 122 at 23 ° C tends to become too high. In the wafer fixing region 12A of the dicing die-bonding film 12, the 90-degree peel force of the adhesive layer 121 and the substrate layer 122 at 23 ° C is 0.02 N / 20 mm or more. Since it is 0.02 N / 20 mm or more, the semiconductor wafer / semiconductor wafer is not easily peeled from the adhesive layer 121 during the process from the fixing of the semiconductor wafer to the pickup of the semiconductor wafer. If the 90-degree peel force at 23 ° C is 0.1 N / 20 mm or more, the adhesive layer 121 can be prevented from adhering to the release film 11 when the release film 11 is removed from the dicing die-bond film 12. 90 ° at 23 ° C The upper limit of the peeling force is 0.5 N / 20 mm, and preferably 0.3 N / 20 mm. Since it is 0.5 N / 20 mm or less, the semiconductor wafer with the adhesive layer can be easily peeled off after the semiconductor wafer is divided. In the wafer fixing region 12A of the dicing die-bonding film 12, the 90-degree peel force of the adhesive layer 121 and the substrate layer 122 at -15 ° C is 0.1 N / 20 mm or more, preferably 0.3 N / 20 mm. the above. Since it is 0.1 N / 20 mm or more, the adhesive layer can be accurately separated. The reason is considered to be that the force is effectively transmitted to the adhesive layer. The upper limit of the 90-degree peeling force at -15 ° C is, for example, 10 N / 20 mm. The base material layer 122 may be selected from, for example, a polyetheretherketone film, a polyetherimide film, a polyarylate film, a polyethylene naphthalate film, a polyethylene film, a polypropylene film, a polybutene film, a polyimide Butadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polybutylene terephthalate film, polyurethane film , Ethylene-vinyl acetate copolymer film (EVA film), ionic polymer resin film, ethylene- (meth) acrylic copolymer film, ethylene- (meth) acrylate copolymer film, polystyrene film, and polycarbonate Ester film and other plastic films. It is desirable that the base material layer 122 has a certain degree of stretchability. Therefore, a polyethylene film, a polypropylene film, an ethylene-vinyl acetate copolymer film, and an ionic polymer resin film are preferred. The storage elastic modulus of the adhesive layer 121 at 23 ° C. is preferably 10 GPa or less, and more preferably 5 GPa or less. If it is 10 GPa or less, the adhesiveness with the base material layer 122 is high, and peeling between the adhesive layer 121 and the base material layer 122 after the severing can be suppressed. The lower limit of the storage elastic modulus at 23 ° C is, for example, 1 MPa. The adhesive layer 121 contains a resin component. Examples of the resin component include a thermoplastic resin and a thermosetting resin. Examples of the thermoplastic resin include an acrylic resin. The acrylic resin is not particularly limited, and examples thereof include one or two or more kinds of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Polymer (acrylic copolymer) and the like. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, third butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, ten Octyl, or dodecyl. The other monomers forming the polymer (acrylic copolymer) are not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, Carboxyl-containing monomers such as fumaric acid or crotonic acid, anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate Ester, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, (meth) Hydroxyl-containing monomers such as 12-hydroxylauryl acrylate or (4-hydroxymethylcyclohexyl) methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamido-2 -A sulfonic acid group-containing monomer such as methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate or (meth) acrylamidooxynaphthalenesulfonic acid, or the like, or Phosphate group-containing monomers such as 2-hydroxyethyl acrylate and the like. In the acrylic resin, the weight average molecular weight is preferably 100,000 or more, more preferably 300,000 to 3 million, and still more preferably 500,000 to 2 million. The reason is that if it is within this numerical range, the adhesion and heat resistance are excellent. The weight average molecular weight is a value measured by GPC (Gel Permeation Chromatography) and calculated by polystyrene conversion. The acrylic resin preferably contains a functional group. The functional group is, for example, a hydroxyl group, a carboxyl group, a nitrile group, or the like. Preferred are a hydroxyl group and a carboxyl group. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, and more preferably 20% by weight or more. When it is 10% by weight or more, the flexibility is good. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 80% by weight or less, and more preferably 70% by weight or less. Examples of the thermosetting resin include epoxy resin and phenol resin. The epoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, Difunctional epoxy resins or polyfunctional epoxy resins such as naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, or hydantoin type , Isocyanuric acid triglycidyl ester type or glycidylamine type epoxy resin. Among these epoxy resins, particularly preferred are novolac-type epoxy resin, biphenyl-type epoxy resin, trihydroxyphenylmethane-type resin, or tetraphenol-based ethane-type epoxy resin. The reason is that these epoxy resins are rich in reactivity with a phenol resin as a hardener, and are excellent in heat resistance and the like. The epoxy equivalent of the epoxy resin is preferably 100 g / eq. Or more, and more preferably 120 g / eq. Or more. The epoxy equivalent of the epoxy resin is preferably 1000 g / eq. Or less, and more preferably 500 g / eq. Or less. The epoxy equivalent of the epoxy resin can be measured by a method specified in JIS K 7236-2009. Phenol resin functions as a hardener for epoxy resins. Examples include phenol novolac resin, phenol aralkyl resin, cresol novolac resin, third butyl novolac resin, nonylphenol novolac resin Novolac-type phenol resin, soluble phenol-type phenol resin, polyhydroxystyrene such as polyparahydroxystyrene, etc. Among these phenol resins, phenol novolak resin and phenol aralkyl resin are particularly preferred. This is because the connection reliability of the semiconductor device can be improved. The hydroxyl equivalent of the phenol resin is preferably 150 g / eq. Or more, and more preferably 200 g / eq. Or more. The hydroxy equivalent of the phenol resin is preferably 500 g / eq. Or less, and more preferably 300 g / eq. Or less. Regarding the blending ratio of the epoxy resin and the phenol resin, for example, the blending ratio is preferably such that the hydroxyl group in the phenol resin becomes 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. That is, if the blending ratio of the two is out of this range, a sufficient curing reaction will not proceed, and the characteristics of the cured product will easily deteriorate. The total content of the epoxy resin and the phenol resin in 100% by weight of the resin component is preferably 20% by weight or more, and more preferably 30% by weight or more. The total content of the epoxy resin and the phenol resin is preferably 90% by weight or less, and more preferably 80% by weight or less. The adhesive layer 121 may include an inorganic filler. Examples of the inorganic filler include silicon dioxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, Tin, zinc, palladium, solder, carbon, etc. Among them, silicon dioxide, aluminum oxide, and silver are preferred, and silicon dioxide is more preferred. The average particle diameter of the inorganic filler is preferably 0.001 μm to 1 μm. The average particle diameter of the filler can be measured by the following method. The adhesive layer 121 was put into a crucible and burned at 700 ° C. for 2 hours in an atmospheric atmosphere to ash, so that the obtained ash was dispersed in pure water and subjected to ultrasonic treatment for 10 minutes, and laser diffraction was used. A scattering-type particle size distribution measuring device (manufactured by Beckman Coulter, "LS13320"; wet method) was used to determine the average particle diameter. The content of the inorganic filler in the adhesive layer 121 is preferably 0% by weight or more, more preferably 1% by weight or more, still more preferably 3% by weight or more, and still more preferably 20% by weight or more. The content of the inorganic filler in the adhesive layer 121 is preferably 85% by weight or less, more preferably 20% by weight or less, and even more preferably 15% by weight or less. The adhesive layer 121 may contain, in addition to the above-mentioned components, formulation agents generally used in film production, such as a silane coupling agent, a hardening accelerator, and a crosslinking agent. The method for manufacturing the cut-to-crystal film 12 includes, for example, a step of performing a corona discharge treatment on the second region 122B of the substrate layer 122, and a step of forming an adhesive layer 121 on the substrate layer 122. Corona treatment is a surface treatment technology that modifies the surface of substrates such as plastic films, paper, and metal foils by corona discharge irradiation. If a dielectric is inserted between the metal electrodes and a high-frequency and high-voltage is applied, a filament-like plasma called a flow corona is randomly and temporally and spatially formed between the electrodes. The high-energy electrons reach the surface layer of the polymer film passing through the opposite electrode side, and cut the main chain or side chain of the polymer bond. The severed polymer surface layer becomes a state of free radicals, and oxygen radicals or ozone layers in the gas phase are rebonded with the main chain or side chains, thereby introducing polar functional groups such as hydroxyl groups and carbonyl groups. Since hydrophilicity is imparted to the surface of the substrate, the adhesion (wetting property) to the hydrophobic polymer is improved, and the adhesion force is increased. If the introduced functional group is chemically bonded to the adhesive layer 121, the adhesive force becomes higher. The surface energy of the base material layer 122 after the corona discharge treatment is, for example, 30 dyne / cm or more, and preferably 35 dyne / cm or more. As the main method for partially performing the corona treatment, two methods can be cited. The first method is to protect a part of the base material layer 122 from a corona by using a mask (shield). By placing a mask between the base material layer 122 and the discharge electrode, a part of the base material layer 122 is masked by the mask. The mask contains, for example, a non-conductive material. Reel-shaped objects with multiple masks, long non-adhesive films with multiple masks, and weakly adhesive tapes with multiple masks can be used repeatedly. The second method is a method in which the substrate layer 122 is passed between a discharge electrode and a dielectric roller having irregularities. In this method, only the convex portion can be modified. The dielectric roller includes, for example, a metal core and a dielectric layer wound around the metal core. The dielectric layer has irregularities. The distance between the recess and the electrode is preferably 2 mm or more. The dielectric layer may have insulation, conductivity, and corona discharge resistance, for example. The dielectric layer includes, for example, chlorine-based rubber, PET rubber, silicone rubber, and ceramics. The second method is simpler than the first method. However, the second method has a tendency that the boundary between the corona-treated portion and the untreated portion is more blurred than the first method. The cut crystal sticky tape 1 can be used for manufacturing a semiconductor device. As shown in FIG. 3, the light-condensing point is aligned with the inside of the semiconductor wafer 4P before irradiation, and the laser light 100 is irradiated along the grid-like predetermined division line 4L. A modified region 41 is formed on the semiconductor wafer 4P before irradiation, and a semiconductor Wafer 4. Examples of the pre-irradiation semiconductor wafer 4P include a silicon wafer, a silicon carbide wafer, and a compound semiconductor wafer. Examples of the compound semiconductor wafer include a gallium nitride wafer. The irradiation conditions of the laser light 100 can be appropriately adjusted within a range of the following conditions, for example. (A) Laser light 100 Laser light source Semiconductor laser light excites Nd: YAG laser light wavelength 1064 nm Laser spot cross section area 3.14 × 10 ^-8 cm ² Oscillation type Q switching pulse repetition frequency below 100 kHz Pulse width below 1 μs Laser output quality below 1 mJ Laser light quality TEM00 Polarization characteristics Linear polarization (B) Condensing lens magnification 100 times or less NA 0.55 Transmission rate with respect to laser light wavelength 100% In the following (C), the moving speed of the mounting table for mounting the semiconductor wafer before irradiation is 280 mm / sec. As shown in FIG. 4, the semiconductor wafer 4 includes a modified region 41. The modified region 41 is weaker than the other regions. The semiconductor wafer 4 further includes semiconductor wafers 5A, 5B, 5C,..., 5F. As shown in FIG. 5, the isolation film 11 is removed from the die-cutting die-bonding belt 1, and the die-cutting ring 31 and the semiconductor wafer 4 heated by the heating table are fixed to the die-cutting die-bond film 12 by a roller. The semiconductor wafer 4 is fixed to the wafer fixing region 12A. The semiconductor wafer 4 is fixed at, for example, 40 ° C. or higher, preferably 45 ° C. or higher, more preferably 50 ° C. or higher, and further preferably 55 ° C. or higher. The semiconductor wafer 4 is fixed at, for example, 100 ° C or lower, preferably 90 ° C or lower. The fixing pressure of the semiconductor wafer 4 is, for example, 1 × 10 ⁵ Pa ～ 1 × 10 ⁷ Pa. The roll speed is, for example, 10 mm / sec. The cut crystal ring 31 is fixed to the cut crystal ring fixing region 12B. As shown in FIG. 6, the die-cutting die-casting film 12 is jacked up by a jacking mechanism 33 located below the die-cutting-die-sticking film 12 to expand the cut-die-sticking film 12. The expansion temperature is preferably 10 ° C or lower, and more preferably 0 ° C or lower. The lower limit of the temperature is, for example, -20 ° C. The semiconductor wafer 4 is cut off with the expansion region 41 as a starting point by the expansion of the cut die-bond film 12, and then the agent layer 121 is also cut off. As a result, a semiconductor wafer 5A is formed on the base material layer 122 with an adhesive layer 121A after the breaking. As shown in FIG. 7, the jacking mechanism 33 is lowered. As a result, the slicing die-bonding film 12 is loosened. Slack is generated around the periphery of the wafer fixing area 12A. As shown in FIG. 8, the die-cutting die-casting film 12 is lifted up by an adsorption table 32 located below the die-cutting die-casting film 12, and the cut-die-sticking film 12 is attracted and fixed to the adsorption table while maintaining expansion. 32. As shown in FIG. 9, the suction stage 32 is lowered in a state where the cut crystal sticky film 12 is suction-fixed to the suction stage 32. In a state where the cut crystal sticky film 12 is attracted and fixed to the adsorption table 32, hot air is blown to the relaxation of the cut crystal sticky film 12 to eliminate the slack. The temperature of the hot air is preferably 170 ° C or higher, and more preferably 180 ° C or higher. The upper limit of the hot air temperature is, for example, 240 ° C, and preferably 220 ° C. The semiconductor wafer 5A with the adhesive layer 121A after the separation is peeled from the base material layer 122. As shown in FIG. 10, the semiconductor wafer 5A with the adhesive layer 121A after the separation is crimped to the adherend 6. The compression bonding is performed at, for example, 80 ° C. or higher, and preferably 90 ° C. or higher. For example, the pressure bonding is performed at a temperature of 150 ° C or lower, preferably 130 ° C or lower. The adherend 6 is, for example, a lead frame, an interposer, a TAB (Tape Automated Bonding) film, a semiconductor wafer, or the like. The adherend 6 has a terminal portion. By heating the adherend 6 with the semiconductor wafer 5A in a pressurized atmosphere, the adhesive layer 121 is hardened after the separation. Pressurized atmosphere, for example, 0.5 kg / cm ² (4.9 × 10 ^-2 MPa) or more, preferably 1 kg / cm ² (9.8 × 10 ^-2 MPa), more preferably 5 kg / cm ² (4.9 × 10 ^-1 MPa) or more. For example, heating is performed at 120 ° C or higher, preferably 150 ° C or higher, and more preferably 170 ° C or higher. The upper limit is, for example, 260 ° C, 200 ° C, 180 ° C, and the like. As shown in FIG. 11, the electrode pad of the semiconductor wafer 5A and the terminal portion of the adherend 6 are electrically connected by the bonding wire 7, and the semiconductor wafer 5A is sealed with the sealing resin 8. The semiconductor device obtained by the above method includes a semiconductor wafer 5A, an adherend 6 and an adhesive layer 121 after dicing. The adhesive layer 121 after dicing adheres the semiconductor wafer 5A to the adherend 6. The semiconductor device further includes a sealing resin 8 for covering the semiconductor wafer 5A. As described above, the method for manufacturing a semiconductor device includes the following steps: removing the isolation film 11 from the die-bonding tape 1, fixing the semiconductor wafer 4 to the adhesive layer 121 of the die-bonding film 12; and die-bonding the die. The film 12 is applied with a tensile stress to form a semiconductor wafer 5A with an adhesive layer 121A after breaking. Variation 1 The second region 122B is a region to which a primer is applied after the corona discharge treatment. It is desirable that the primer is chemically bonded to the substrate layer 122. The primer is preferably capable of chemically bonding to the base material layer 122 and exhibiting a strong adhesive force to the second portion 121B of the adhesive layer. The primer includes, for example, a crosslinking agent and a polymer. The crosslinking agent of the primer is, for example, an isocyanate-based crosslinking agent, an epoxy-based crosslinking agent, or the like. From the viewpoint of being able to react at a low temperature for a short time, an isocyanate-based crosslinking agent and an epoxy-based crosslinking agent are preferred. The polymer of the primer may have a functional group capable of reacting with the crosslinking agent. The functional group is, for example, a hydroxyl group. The thickness of the primer is, for example, 1 μm. Variation 2 The first region 122A is a region subjected to a corona discharge treatment. The method for manufacturing the cut-to-crystal film 12 includes, for example, a step of performing a corona discharge treatment on the substrate layer 122 and a step of forming an adhesive layer 121 on the substrate layer 122. In the step of performing the corona discharge treatment on the base material layer 122, the intensity of the corona discharge treatment in the first region 122A may be lower than the intensity of the corona discharge treatment in the second region 122B. The intensity of the corona discharge treatment in the first region 122A may be the same as the intensity of the corona discharge treatment in the second region 122B. In this case, the first adhesive layer 121A preferably contains a release agent. Examples of the release agent include fluorine-based, silicone-based, and oil-based release agents. On the other hand, the second part 121B of the adhesive layer preferably does not contain such a release agent. Variation 3 The first region 122A is a region to which a primer is applied after the corona discharge treatment. It is preferable that the polarities of the primer and the polarities of the first part 121A of the adhesive layer are greatly different. The surface energy of the primer is, for example, 5 dyne / cm or more and less than 30 dyne / cm. The surface energy of the first agent layer 121A is, for example, more than 30 dyne / cm and less than 50 dyne / cm. If the elastic modulus of the primer is low, the peeling force of the first layer 121A of the adhesive layer and the substrate layer 122 may become too high. Therefore, a preferred elastic modulus of the primer at room temperature is, for example, It is 100 MPa or more. As a preferred example of the primer, Modification Example 1 is applied. The intensity of the corona discharge treatment in the first region 122A may be the same as the intensity of the corona discharge treatment in the second region 122B. The two can also be different. Variation 4 The first main surface of the base material layer 122 is a surface to which a primer is applied after a corona discharge treatment. The intensity of the corona discharge treatment in the first region 122A may be the same as the intensity of the corona discharge treatment in the second region 122B. The two can also be different. As a preferred example of the primer, Modification Example 1 is applied. Variation 5 The first region 122A is an embossed region. Variation 6 The second region 122B is an embossed region. Variation 7 The first main surface of the base material layer 122 is a surface subjected to embossing. Variation 8 As shown in FIG. 12, the adhesive layer 121 includes the first adhesive layer 121A and the second adhesive layer 121B, and does not include the third adhesive layer 121C. The first adhesive layer 121A has, for example, a disk shape. The second adhesive layer 121B has, for example, an annular plate shape. The second adhesive layer 121B is not in contact with the first adhesive layer 121A. The composition / physical properties of the second adhesive layer 121B may be different from the composition / physical properties of the first adhesive layer 121A. A preferred example of the composition / physical properties of the first part 121A of the adhesive layer is the first embodiment. The second adhesive layer 121B is preferably adhesive. The adhesive constituting the second part 121B of the adhesive layer may be, for example, acrylic, rubber, vinyl alkyl ether, polysiloxane, polyester, polyamide, urethane, or styrene. -A known adhesive such as a diene block copolymer is used singly or in combination of two or more kinds. The second part 121B of the adhesive layer preferably contains a crosslinking agent and a resin component capable of reacting with functional groups such as a hydroxyl group and a carboxylic acid group in the second region 122B subjected to corona discharge treatment. The resin component is preferably a thermoplastic resin containing a functional group capable of reacting with a crosslinking agent. This is because the second adhesive layer 121B and the base material layer 122 can be chemically bonded. The functional group of the thermoplastic resin is, for example, a hydroxyl group, a carboxylic acid group, an epoxy group, an amine group, a mercapto group, or a phenol group. The thermoplastic resin is preferably an acrylic polymer in terms of adjustment of the functional group and the like. Examples of the acrylic polymer include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and (meth) Homopolymers or copolymers of (meth) acrylic acid alkyl (meth) acrylic acid, such as octyl acrylate, etc .; C1-C20 alkyl (meth) acrylic acid; , Methacrylic acid, itaconic acid, fumaric acid, maleic anhydride and other monomers containing carboxyl groups or anhydride groups; hydroxyl-containing monomers such as 2-hydroxyethyl (meth) acrylate; and morpholine (meth) acrylate And other amine group-containing monomers; (meth) acrylamide and other amine group-containing monomers; (meth) acrylonitrile and other cyano group-containing monomers; Copolymers such as meth) acrylates and the like. The content of the resin component in the second part 121B of the adhesive layer is, for example, 94% by weight or more, and preferably 95% by weight or more. The content of the resin component in the second part 121B of the adhesive layer is, for example, 99.99% by weight or less, and preferably 99.97% by weight or less. Examples of the crosslinking agent include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, oxazoline-based crosslinking agents, and peroxides. The crosslinking agent may be used alone or in combination of two or more kinds. Preferred are isocyanate-based crosslinking agents and epoxy-based crosslinking agents. Examples of the isocyanate-based crosslinking agent include aromatic isocyanates such as toluene diisocyanate and xylene diisocyanate, alicyclic isocyanates such as isophorone diisocyanate, and aliphatic isocyanates such as hexamethylene diisocyanate. More specifically, examples include lower aliphatic polyisocyanates such as butylene diisocyanate and hexamethylene diisocyanate, lipids such as cyclopentyl diisocyanate, cyclohexyl diisocyanate, and isophorone diisocyanate Aromatic diisocyanates such as cyclic isocyanates, 2,4-toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, xylylene diisocyanate, polymethylene polyphenyl isocyanate, trimethylol Propane / toluene diisocyanate terpolymer adduct (manufactured by Nippon Polyurethane Industry, trade name CORONATE L), trimethylolpropane / hexamethylene diisocyanate terpolymer adduct (manufactured by Nippon Polyurethane Industry, CORONATE HL), isocyanurate of hexamethylene diisocyanate (manufactured by Nippon Polyurethane Industry, trade name CORONATE HX), and other isocyanate adducts; trimethylolpropane addition of xylylene diisocyanate Product (manufactured by Mitsui Chemicals, trade name D110N), trimethylolpropane adduct of hexamethylene diisocyanate (manufactured by Mitsui Chemicals, trade name D 160N); polyether polyisocyanates, polyester polyisocyanates, and the addition of these with various polyols, through isocyanurate bonds, biuret bonds, urethane bonds, etc. are multifunctionalized Polyisocyanates, etc. Among these, it is preferable to use an aliphatic isocyanate because the reaction speed is fast. The isocyanate-based crosslinking agent may be used singly or in combination of two or more kinds. The content of the isocyanate-based crosslinking agent in the second part 121B of the adhesive layer is, for example, 0.01 to 5 parts by weight, and preferably 0.03 to 4 parts by weight based on 100 parts by weight of the resin component. It may be appropriately contained in consideration of the cohesive force and the prevention of peeling in the durability test. The adhesive layer 121 can be produced by screen printing, rotary screen printing, inkjet printing, gravure printing, roll to roll, and the like. From the viewpoint of productivity, rotary screen printing is preferred. These coating methods may be used alone or in combination. Among these methods, the varnish is exposed to the air during coating. It is preferable to use a low-volatile solvent capable of suppressing the change in the varnish concentration during coating. Such solvents are, for example, MIBK (methyl isobutyl ketone, methyl isobutyl ketone), butyl acetate, cyclohexanone, γ-butyrolactone, isophorone, carbitol acetate, DMSO (dimethyl sulfoxide, dimethyl Dimethylacetamide), DMAc (dimethylacetamide, dimethylacetamide), NMP (N-Methyl pyrrolidone, N-methyl pyrrolidone) and the like. Modification 8.1 The second region 122B is a region where a primer is applied after the corona discharge treatment. Modification 8.1 is a combination of modification 8 and modification 1. A preferred example of the modification 8.1 is the modification 1. Modification 8.2 The first region 122A is a region subjected to corona discharge treatment. Modification 8.2 is a combination of modification 8 and modification 2. As a preferable example of the modification 8.2, the modification 2 is applied. Variation 8.3 The first region 122A is a region to which a primer is applied after the corona discharge treatment. Modification 8.3 is a combination of modification 8 and modification 3. A preferred example of the modification 8.3 is the modification 3. Variation 8.4 The first main surface of the base material layer 122 is the surface to which the primer is applied after the corona discharge treatment. Modification 8.4 is a combination of modification 8 and modification 4. As a preferable example of the modification 8.4, the modification 4 is applied. Variation 8.5 The first region 122A is an embossed region. Modification 8.5 is a combination of modification 8 and modification 5. Modification 8.6 The second region 122B is a region subjected to embossing. Modification 8.6 is a combination of modification 8 and modification 6. Variation 8.7 The first main surface of the base material layer 122 is a surface subjected to embossing. Modification 8.7 is a combination of modification 8 and modification 7. Modification 9 As shown in FIG. 13, the adhesive layer 121 includes a first layer 1211 and a second layer 1212. The first layer 1211 has a disk shape. The two faces of the first layer 1211 are defined by the first principal face and the second principal face facing the first principal face. The first main surface of the first layer 1211 is in contact with the isolation film 11. The second main surface of the first layer 1211 is in contact with the second layer 1212. The second layer 1212 has a disc shape. The two faces of the second layer 1212 are defined by the first principal face and the second principal face facing the first principal face. The first main surface of the second layer 1212 is in contact with the first layer 1211. The second main surface of the second layer 1212 is in contact with the base material layer 122. Modification 9.1 The second region 122B is a region to which a primer is applied after the corona discharge treatment. Modification 9.1 is a combination of modification 9 and modification 1. As a preferable example of the modification 9.1, the modification 1 is applied. Variation 9.2 The first region 122A is a region subjected to corona discharge treatment. Modification 9.2 is a combination of modification 9 and modification 2. As a preferable example of the modification 9.2, the modification 2 is applied. Variation 9.3 The first region 122A is a region to which a primer is applied after the corona discharge treatment. Modification 9.3 is a combination of modification 9 and modification 3. As a preferable example of the modification 9.3, the modification 3 is applied. Variation 9.4 The first main surface of the base material layer 122 is a surface to which a primer is applied after the corona discharge treatment. Modification 9.4 is a combination of modification 9 and modification 4. As a preferable example of the modification 9.4, the modification 4 is applied. Variation 9.5 The first region 122A is an embossed region. Modification 9.5 is a combination of modification 9 and modification 5. Modification 9.6 The second region 122B is a region subjected to embossing. Modification 9.6 is a combination of modification 9 and modification 6. Variation 9.7 The first main surface of the base material layer 122 is a surface subjected to embossing. Modification 9.7 is a combination of modification 9 and modification 7. Variation 10 As shown in FIG. 14, the adhesive layer 121 includes a first layer 1211 and a second layer 1212. The first layer 1211 has an annular plate shape. The first layer 1211 is located in the crystal ring fixing region 12B. The two faces of the first layer 1211 are defined by the first principal face and the second principal face facing the first principal face. The first main surface of the first layer 1211 is in contact with the isolation film 11. The second main surface of the first layer 1211 is in contact with the second layer 1212. The first layer 1211 may have adhesiveness. The second layer 1212 has a disc shape. The two faces of the second layer 1212 are defined by the first principal face and the second principal face facing the first principal face. The first main surface of the second layer 1212 is in contact with the first layer 1211 at the dicing ring fixing region 12B. The second main surface of the second layer 1212 is in contact with the base material layer 122. Variation 10.1 The second region 122B is a region where a primer is applied after the corona discharge treatment. Modification 10.1 is a combination of modification 10 and modification 1. As a preferable example of the modification 10.1, the modification 1 is applied. Variation 10.2 The first region 122A is a region subjected to corona discharge treatment. Modification 10.2 is a combination of modification 10 and modification 2. A preferred example of the modification 10.2 is the modification 2. Variation 10.3 The first region 122A is a region to which a primer is applied after the corona discharge treatment. Modification 10.3 is a combination of modification 10 and modification 3. A preferred example of the modification 10.3 is the modification 3. Variation 10.4 The first main surface of the base material layer 122 is a surface to which a primer is applied after the corona discharge treatment. Modification 10.4 is a combination of modification 10 and modification 4. As a preferable example of the modification 10.4, the modification 4 is applied. Variation 10.5 The first region 122A is an embossed region. Modification 10.5 is a combination of modification 10 and modification 5. Variation 10.6 The second region 122B is an embossed region. Modification 10.6 is a combination of modification 10 and modification 6. Variation 10.7 The first main surface of the base material layer 122 is a surface subjected to embossing. Modification 10.7 is a combination of modification 10 and modification 7. Modification 11 In Modification 11, the cut crystal sticky tape 1 was used for the DBG method. Specifically, the method includes the steps of: fixing a semiconductor wafer provided with a groove on a surface (outer surface) of the semiconductor wafer to a back surface polishing film, and grinding the back surface of the semiconductor wafer; The film 11 fixes the ground semiconductor wafer to the adhesive layer 121 of the die-bonding film 12; and applies a tensile stress to the die-bonding film 12 to form a semiconductor wafer with an adhesive layer after breaking. These modifications can be combined with other modifications. [Examples] Hereinafter, the present invention will be described in detail using examples. However, the present invention is not limited to the following examples as long as it does not exceed the gist thereof. Production of cut crystal and sticky film of Examples 1 to 4 and Comparative Examples 2 to 3 According to Table 1, an acrylic polymer, a silica filler, a solid epoxy resin, and a solid phenol resin were dissolved or dispersed in methyl ethyl ketone. It was coated on a PET release film, and methyl ethyl ketone was volatilized at 130 ° C for 2 minutes to obtain an adhesive film having a thickness of 10 μm. A corona treatment machine (500 series manufactured by PILLAR TECHNOLOGIES) was used to corona discharge the 130 μm thick EVA film manufactured by Kurabo Industries under the conditions shown in Table 1. The adhesive film was laminated on the EVA film after corona treatment at 60 ° C., 10 mm / sec, and 0.15 MPa to obtain the cut-to-size adhesive films of Examples 1 to 4 and Comparative Examples 2 to 3. Each of the cut crystal and sticky films has an EVA film and an adhesive film on the EVA film. The two surfaces of the EVA film are defined by a first main surface in contact with the adhesive film and a second main surface facing the first main surface. Both sides of the next film are defined by a first main surface and a second main surface in contact with the EVA film. Each of the cut crystal and sticky crystal films is disc-shaped. In each of the dicing die-bonding films, the dicing ring fixing region is located around the wafer fixing region. Corona treatment amount Corona treatment amount is represented by the following formula. Discharge capacity (W · min / m ² ) = Voltage (W) ÷ electrode width (m) ÷ speed (m / min) of the discharge electrode. Production of the cut-to-size adhesive film of Comparative Example 1 The corona discharge treatment was not performed on the EVA film. 1 The same procedure was used to make the cut crystal and sticky crystal film. Then, a 90 degree peel force between the film and the EVA film was applied at 23 ° C to a substrate tape (BT-315, manufactured by Nitto Denko Corporation) to the adhesive film of the cut crystal adhesive film, and a length of 120 mm × width of 50 mm was cut out. Cut crystal sticky film test piece. The chamber of AUTOGRAPH AGS-J (manufactured by Shimadzu Corporation) was adjusted to 23 ° C or -15 ° C, and a T peel test was performed at a peel angle of 90 degrees and a peel speed of 300 mm / min. The average value of the peeling force is shown in Table 1. At the surface free energy, a backing tape (BT-315 manufactured by Nitto Denko Corporation) was attached to the adhesive film of the die-cut adhesive film at 23 ° C and 50 ± 10% RH at room temperature, and the adhesive film was peeled from the EVA film. Within 5 minutes after peeling, a series of test mixed liquids having a stepped increase in surface tension prepared in accordance with JIS K 6768: 1999 was added dropwise to the first main surface of the EVA film and the second main surface of the adhesive film. A 10 mm-wide blade spreads to form a liquid film with a length of about 5 cm. The liquid film is observed after 2 seconds, and a test mixed liquid that accurately maintains the shape of the liquid film for 2 seconds is selected. The surface tension of the selected test mixture is shown in Table 1. For the breaking and picking properties, a die-cutting device (DFD6361) manufactured by DISCO was used to cut a 12-inch bare wafer with a width of 20 to 25 μm and a depth of 50 μm at 8 mm × 12 mm. A back grinding tape (UB-3083D manufactured by Nitto Denko Corporation) was attached to the cut surface, and grinding was performed using a back grinding device (DGP8760) manufactured by DISCO until the thickness of the bare wafer was 20 μm. The wafer after lapping was bonded to a die-bonding adhesive film by a laminator at 60 ° C., 0.15 MPa, and 10 mm / sec. The die-cut ring was fixed to the die-bonding adhesive film by a laminator at 60 ° C., 0.15 MPa, and 10 mm / sec. The back grinding tape was peeled off from the wafer after grinding, and a cold expander (DDS3200 manufactured by DISCO) was used to break the grinding at a cooling temperature of -15 ° C, a speed of 1 mm / sec, and an elongation of 11 mm. The cut wafer is stretched at a temperature of 80 ° C., a speed of 1 mm / sec, and a stretching amount of 7 mm using a heating table, and heat shrinks at 200 ° C. Using the above method, a wafer with a film after breaking is formed. In order to confirm whether the film was broken along the breaking line after breaking, 30 wafers with breaking and film were observed in each case. The breaking rate was determined by the following formula. A breaking rate of 80% or more was recorded as ○, and a breaking rate of 80% or less was recorded as ×. The determination results are shown in Table 1. Breaking rate = the number of wafers with a break followed by a film along the break line / 30 picking property 10 wafers with a break and a film were picked up using the SPA300 die bonder manufactured by Shinkawa Corporation, and the number of successes was 8 The above cases are denoted by ○, and the cases below 8 are denoted by ×. [Table 1]

1‧‧‧ cut crystal sticky tape

4‧‧‧ semiconductor wafer

4L‧‧‧ divided scheduled line

4P‧‧‧Semiconductor wafer before irradiation

5A, 5B, 5C, 5D, 5E, 5F‧‧‧ semiconductor wafers

6‧‧‧ to be followed

7‧‧‧welding wire

8‧‧‧sealing resin

11‧‧‧ isolation film

12‧‧‧ cut crystal film

12a, 12b, 12c, 12m‧‧‧‧cut crystal

12A‧‧‧Circle fixed area

12B‧‧‧ Cut crystal ring fixed area

31‧‧‧cut crystal ring

32‧‧‧ adsorption station

33‧‧‧ jacking mechanism

41‧‧‧Modified area

100‧‧‧laser light

121‧‧‧ Adhesive layer

121A‧‧‧ Adhesive Layer Part 1

121B‧‧‧ Adhesive Layer Part 2

121C‧‧‧Adhesive Layer Part 3

122‧‧‧ substrate layer

122A‧‧‧Area 1

122B‧‧‧Zone 2

1211‧‧‧Level 1

1212‧‧‧Level 2

FIG. 1 is a schematic plan view of a cut crystal sticky tape of Embodiment 1. FIG. FIG. 2 is a schematic cross-sectional view of a portion of a cut crystal sticky tape of Embodiment 1. FIG. FIG. 3 is a schematic perspective view of a manufacturing process of a semiconductor device according to the first embodiment. FIG. 4 is a schematic cross-sectional view of a manufacturing process of a semiconductor device according to the first embodiment. FIG. 5 is a schematic cross-sectional view of a manufacturing process of a semiconductor device according to the first embodiment. FIG. 6 is a schematic cross-sectional view of a manufacturing process of a semiconductor device according to the first embodiment. FIG. 7 is a schematic cross-sectional view of a manufacturing process of a semiconductor device according to the first embodiment. FIG. 8 is a schematic cross-sectional view of a manufacturing process of a semiconductor device according to the first embodiment. FIG. 9 is a schematic cross-sectional view of a manufacturing process of a semiconductor device according to the first embodiment. FIG. 10 is a schematic cross-sectional view of a manufacturing process of a semiconductor device according to the first embodiment. Fig. 11 is a schematic cross-sectional view of a manufacturing process of a semiconductor device according to the first embodiment. FIG. 12 is a schematic cross-sectional view of a portion of a cut crystal sticky tape of modification 8. FIG. FIG. 13 is a schematic cross-sectional view of a portion of a cut crystal sticky tape of modification 9. FIG. FIG. 14 is a schematic cross-sectional view of a portion of a cut crystal sticky tape of modification 10. FIG.

Claims (5)

A cut crystal and sticky crystal tape includes an isolation film and a film including an adhesive layer and a substrate layer. The adhesive layer is located between the isolation film and the substrate layer in a wafer fixing region of the film. The 90-degree peel force of the adhesive layer and the substrate layer at 23 ° C is 0.02 N / 20 mm to 0.5 N / 20 mm. In the wafer fixing area, the adhesive layer and the substrate layer are at The 90-degree peel force at -15 ° C is 0.1 N / 20 mm or more. The two surfaces of the substrate layer are defined by the first main surface and the second main surface in contact with the adhesive layer, and are located in the wafer fixing area. The surface free energy of the first main surface of the base material layer is 32 to 39 mN / m. For example, the dicing die-bonding tape of claim 1, wherein both sides of the adhesive layer are defined by a first main surface in contact with the isolation film and a second main surface in contact with the substrate layer, and the wafer is fixed. When the surface free energy of the second main surface of the adhesive layer in the region is E ₂ , and when the surface free energy of the first main surface of the substrate layer in the wafer fixing region is E ₁ , E ₂ The difference from E ₁ is 15 mN / m or less. For example, the dicing die-bonding tape of claim 1, wherein both sides of the adhesive layer are defined by the first main surface in contact with the isolation film and the second main surface in contact with the substrate layer, and are fixed on the wafer In the region, the surface free energy of the second principal surface of the adhesive layer is 34 to 50 mN / m. For example, the cut crystal sticky tape of any one of claims 1 to 3, wherein the storage elastic modulus of the adhesive layer at 23 ° C is 10 GPa or less. A method of manufacturing a semiconductor device, comprising the steps of: removing the isolation film from the die-cut die-bond tape of any one of claims 1 to 4, and fixing a semiconductor wafer to the adhesive layer of the film; and The film is subjected to tensile stress to form a semiconductor wafer with an adhesive layer after breaking.