TWI738878B - Die-cutting die-bonding tape and manufacturing method of semiconductor device - Google Patents

Die-cutting die-bonding tape and manufacturing method of semiconductor device Download PDF

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TWI738878B
TWI738878B TW106133085A TW106133085A TWI738878B TW I738878 B TWI738878 B TW I738878B TW 106133085 A TW106133085 A TW 106133085A TW 106133085 A TW106133085 A TW 106133085A TW I738878 B TWI738878 B TW I738878B
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adhesive layer
film
layer
main surface
variation
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TW201819175A (en
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木村雄大
高本尚英
大西謙司
宍戶雄一郎
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日商日東電工股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

本發明之目的在於提供一種能夠精度良好地分斷接著劑層之切晶黏晶帶。 本發明係關於一種切晶黏晶帶，其包括：隔離膜、及包含接著劑層與基材層之膜。接著劑層位於隔離膜與基材層之間。基材層之兩面係由與接著劑層接觸之第1主面及第2主面定義。於膜之晶圓固定區域中，接著劑層及基材層於23℃下之90度剝離力為0.02 N/20 mm～0.5 N/20 mm。於晶圓固定區域中，接著劑層及基材層於-15℃下之90度剝離力為0.1 N/20 mm以上。於晶圓固定區域中，基材層之第1主面之表面自由能為32～39 mN/m。The purpose of the present invention is to provide a dicing die bonding tape capable of accurately separating the adhesive layer. The present invention relates to a die-cutting die-bonding tape, which includes: an isolation film, and a film including an adhesive layer and a substrate layer. The adhesive layer is located between the isolation film and the substrate layer. The two sides of the substrate layer are defined by the first and second main surfaces that are in contact with the adhesive layer. In the wafer fixing area of the film, the 90 degree peeling force of the adhesive layer and the substrate layer at 23°C is 0.02 N/20 mm～0.5 N/20 mm. In the wafer fixing area, the 90-degree peeling force of the adhesive layer and the substrate layer at -15°C is 0.1 N/20 mm or more. In the wafer fixing area, the surface free energy of the first main surface of the substrate layer is 32-39 mN/m.

Description

切晶黏晶帶及半導體裝置之製造方法Die-cutting die-bonding tape and manufacturing method of semiconductor device

本發明係關於一種切晶黏晶帶及半導體裝置之製造方法。The present invention relates to a method for manufacturing a dicing die-bonding tape and a semiconductor device.

有對半導體晶圓之分割預定線照射雷射光，使半導體晶圓斷裂而得到單個之半導體晶片之方法(以下有時稱為「隱形切晶(Stealth Dicing；註冊商標)」)、或藉由在半導體晶圓之表面(外表面)形成槽後進行半導體晶圓之背面磨削而形成單個之半導體晶片之方法(以下稱為「DBG(Dicing Before Grinding，先切晶後磨削)法」)。 隱形切晶或DBG法中，於其過程中有時使用切晶黏晶帶。切晶黏晶帶有具有基材層、接著劑層及隔離膜，且接著劑層位於基材層與隔離膜之間之構造者。亦有具有基材層、黏著劑層、接著劑層及隔離膜之切晶黏晶帶。前者之切晶黏晶帶與後者之切晶黏晶帶相比，能夠廉價地製造。 隱形切晶或DBG法中，有於低溫下對接著劑層進行分斷之情況。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2004-250572號公報 [專利文獻2]日本專利第5305501號There is a method of irradiating a predetermined dividing line of a semiconductor wafer with laser light to break the semiconductor wafer to obtain a single semiconductor chip (hereinafter sometimes referred to as "Stealth Dicing (registered trademark)"), or by A method of forming a single semiconductor chip by grinding the back surface of the semiconductor wafer after forming grooves on the surface (outer surface) of a semiconductor wafer (hereinafter referred to as "DBG (Dicing Before Grinding, Dicing Before Grinding) method"). In the stealth crystal cutting or DBG method, a crystal bonding tape is sometimes used in the process. The dicing die-bonding belt has a structure with a base material layer, an adhesive layer and an isolation film, and the adhesive layer is located between the base material layer and the isolation film. There are also diced die-bonding tapes with a substrate layer, an adhesive layer, an adhesive layer, and an isolation film. Compared with the latter, the diced die-cut tape of the former can be manufactured at a low cost. In the stealth dicing or DBG method, there are cases where the adhesive layer is broken at a low temperature. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2004-250572 [Patent Document 2] Japanese Patent No. 5305501

[發明所欲解決之問題] 本發明之目的在於提供一種能夠精度良好地分斷接著劑層之切晶黏晶帶。本發明之目的在於提供一種能夠精度良好地分斷接著劑層之半導體裝置之製造方法。 [解決問題之技術手段] 本發明係關於一種切晶黏晶帶，其包括：隔離膜、及包含接著劑層與基材層之膜。接著劑層位於隔離膜與基材層之間。基材層之兩面係由與接著劑層接觸之第1主面及第2主面定義。於膜之晶圓固定區域中，接著劑層及基材層於23℃下之90度剝離力為0.02 N/20 mm～0.5 N/20 mm。於晶圓固定區域中，接著劑層及基材層於-15℃下之90度剝離力為0.1 N/20 mm以上。於晶圓固定區域中，基材層之第1主面之表面自由能為32～39 mN/m。 由於接著劑層及基材層於23℃下之90度剝離力為0.02 N/20 mm以上，故而於從半導體晶圓之固定起至半導體晶片之拾取為止之過程中，半導體晶圓/半導體晶片不易從接著劑層剝離。由於接著劑層及基材層於-15℃下之90度剝離力為0.1 N/20 mm以上，故而能夠精度良好地分斷接著劑層。認為其原因在於力有效地傳遞至接著劑層。由於23℃下之90度剝離力為0.5 N/20 mm以下，故而於分斷半導體晶圓後，能夠容易地剝離附接著劑層之半導體晶片。由於基材層之第1主面之表面自由能E1 為32 mN/m以上，故而基材層對接著劑層顯示出良好之潤濕性。 本發明係關於一種半導體裝置之製造方法，其包括如下步驟：從切晶黏晶帶去除隔離膜，將半導體晶圓固定於膜之接著劑層；及對膜施加拉伸應力，形成附分斷後接著劑層之半導體晶片。[Problem to be Solved by the Invention] The object of the present invention is to provide a dicing die bonding tape capable of accurately separating the adhesive layer. The object of the present invention is to provide a method for manufacturing a semiconductor device capable of separating an adhesive layer with high precision. [Technical Means for Solving the Problem] The present invention relates to a dicing die bonding tape, which includes: an isolation film, and a film including an adhesive layer and a substrate layer. The adhesive layer is located between the isolation film and the substrate layer. The two sides of the substrate layer are defined by the first and second main surfaces that are in contact with the adhesive layer. In the wafer fixing area of the film, the 90 degree peeling force of the adhesive layer and the substrate layer at 23°C is 0.02 N/20 mm～0.5 N/20 mm. In the wafer fixing area, the 90-degree peeling force of the adhesive layer and the substrate layer at -15°C is 0.1 N/20 mm or more. In the wafer fixing area, the surface free energy of the first main surface of the substrate layer is 32-39 mN/m. Since the 90-degree peeling force of the adhesive layer and the substrate layer at 23°C is over 0.02 N/20 mm, the semiconductor wafer/semiconductor wafer is It is not easy to peel off from the adhesive layer. Since the 90-degree peel force of the adhesive layer and the substrate layer at -15°C is 0.1 N/20 mm or more, the adhesive layer can be separated accurately. It is considered that the reason is that the force is effectively transmitted to the adhesive layer. Since the 90 degree peeling force at 23°C is 0.5 N/20 mm or less, after the semiconductor wafer is split, the semiconductor wafer of the adhesive layer can be easily peeled off. Since the surface free energy E 1 of the first main surface of the base layer is 32 mN/m or more, the base layer shows good wettability to the adhesive layer. The present invention relates to a method for manufacturing a semiconductor device, which includes the following steps: removing the isolation film from the die-cutting die-bonding tape, fixing the semiconductor wafer to the adhesive layer of the film; Adhesive layer of semiconductor wafer.

以下列舉實施形態對本發明詳細地進行說明，但本發明不僅限定於該等實施形態。 實施形態1 如圖1所示，切晶黏晶帶1包含隔離膜11及切晶黏晶膜12a、12b、12c、……、12m(以下總稱為「切晶黏晶膜12」。)。切晶黏晶帶1可呈捲筒狀。隔離膜11呈帶狀。隔離膜11例如為經剝離處理之聚對苯二甲酸乙二酯(PET)膜等。切晶黏晶膜12位於隔離膜11上。切晶黏晶膜12a與切晶黏晶膜12b之間之距離、切晶黏晶膜12b與切晶黏晶膜12c之間之距離、……切晶黏晶膜12l與切晶黏晶膜12m之間之距離固定。切晶黏晶膜12呈圓盤狀。 如圖2所示，切晶黏晶膜12包含晶圓固定區域12A及切晶環固定區域12B。晶圓固定區域12A例如可呈圓盤狀。切晶環固定區域12B位於晶圓固定區域12A之周邊。切晶環固定區域12B例如可呈環形板狀。 切晶黏晶膜12包含接著劑層121。接著劑層121呈圓盤狀。接著劑層121之厚度例如為2 μm以上，較佳為5 μm以上。接著劑層121之厚度例如為200 μm以下，較佳為150 μm以下，進而較佳為100 μm以下，進而較佳為50 μm以下。接著劑層121之兩面係由第1主面及與第1主面對向之第2主面定義。接著劑層121之第1主面與隔離膜11接觸。接著劑層121包含至少屬於晶圓固定區域12A之接著劑層第1部121A。接著劑層121包含至少屬於切晶環固定區域12B之接著劑層第2部121B。接著劑層121包含位於接著劑層第1部121A與接著劑層第2部121B之間之接著劑層第3部121C。接著劑層第3部121C連接接著劑層第1部121A及接著劑層第2部121B。接著劑層第3部121C例如可呈環形板狀。 切晶黏晶膜12包含基材層122。基材層122呈圓盤狀。基材層122之厚度例如為50 μm以上，較佳為80 μm以上。基材層122之厚度例如為200 μm以下，較佳為170 μm以下。基材層122之兩面係由與接著劑層121接觸之第1主面及與第1主面對向之第2主面定義。基材層122之第1主面於晶圓固定區域12A中包含第1區域122A。第1區域122A係未進行前處理之區域。前處理為電暈放電處理、電漿處理、底塗劑之塗佈、剝離處理、壓紋、紫外線處理、加熱處理等。用於剝離處理之剝離劑例如可列舉聚矽氧系剝離劑、氟系剝離劑。基材層122之第1主面於切晶環固定區域12B中包含第2區域122B。第2區域122B係經電暈放電處理之區域。 晶圓固定區域12A中之基材層122之第1主面之表面自由能E1 為32 mN/m以上。由於為32 mN/m以上，故而基材層122對接著劑層121顯示出良好之潤濕性。E1 之上限例如為39 mN/m，較佳為36 mN/m。若為39 mN/m以下，則由於基材層122對接著劑層121之密接性不會過高，故而於分斷半導體晶圓後，能夠容易地剝離附接著劑層之半導體晶片。 晶圓固定區域12A中之接著劑層121之第2主面之表面自由能E2 較佳為33 mN/m以上，較佳為34 mN/m以上。E2 之上限例如為50 mN/m，較佳為45 mN/m。 晶圓固定區域12A中之接著劑層121之第1主面之表面自由能較佳為33 mN/m以上，較佳為34 mN/m以上。若為33 mN/m以上，則能夠從隔離膜11容易地剝離接著劑層121。接著劑層121之第1主面之表面自由能之上限例如為50 mN/m，較佳為45 mN/m。若為50 mN/m以下，則能夠容易地將用於製作接著劑層121之液體塗覆至隔離膜11。 E2 與E1 之差較佳為15 mN/m以下，更佳為13 mN/m以下。E2 與E1 之差較佳為1 mN/m以上。於未達1 mN/m時或超過15 mN/m時，有接著劑層121及基材層122於23℃下之90度剝離力變得過高之傾向。 於切晶黏晶膜12之晶圓固定區域12A中，接著劑層121及基材層122於23℃下之90度剝離力為0.02 N/20 mm以上。由於為0.02 N/20 mm以上，故而於自半導體晶圓之固定起至半導體晶片之拾取為止之過程中，半導體晶圓/半導體晶片不易從接著劑層121剝離。若23℃下之90度剝離力為0.1 N/20 mm以上，則於從切晶黏晶膜12去除隔離膜11時，能夠防止接著劑層121附著於隔離膜11。23℃下之90度剝離力之上限為0.5 N/20 mm，較佳為0.3 N/20 mm。由於為0.5 N/20 mm以下，故而於分斷半導體晶圓後，能夠容易地剝離附接著劑層之半導體晶片。 於切晶黏晶膜12之晶圓固定區域12A中，接著劑層121及基材層122於-15℃下之90度剝離力為0.1 N/20 mm以上，較佳為0.3 N/20 mm以上。由於為0.1 N/20 mm以上，故而能夠精度良好地分斷接著劑層。認為其原因在於力有效地傳遞至接著劑層。-15℃下之90度剝離力之上限例如為10 N/20 mm。 基材層122例如可選自聚醚醚酮膜、聚醚醯亞胺膜、聚芳酯膜、聚萘二甲酸乙二醇酯膜、聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、聚氯乙烯膜、氯乙烯共聚物膜、聚對苯二甲酸乙二酯膜、聚對苯二甲酸丁二酯膜、聚胺基甲酸酯膜、乙烯-乙酸乙烯酯共聚物膜(EVA膜)、離子聚合物樹脂膜、乙烯-(甲基)丙烯酸共聚物膜、乙烯-(甲基)丙烯酸酯共聚物膜、聚苯乙烯膜及聚碳酸酯膜等塑膠膜等。理想的是基材層122具有某種程度之伸縮性，故而較佳為聚乙烯膜、聚丙烯膜、乙烯-乙酸乙烯酯共聚物膜、離子聚合物樹脂膜。 接著劑層121於23℃下之儲存彈性模數較佳為10 GPa以下，更佳為5 GPa以下。若為10 GPa以下，則與基材層122之密接性高，能夠抑制分斷後於接著劑層121與基材層122之間發生剝離。23℃下之儲存彈性模數之下限例如為1 MPa。 接著劑層121包含樹脂成分。作為樹脂成分，可列舉熱塑性樹脂、熱硬化性樹脂等。作為熱塑性樹脂，例如可列舉丙烯酸系樹脂。 作為丙烯酸系樹脂，並無特別限定，可列舉以具有碳數30以下、特別是碳數4～18之直鏈或支鏈烷基之丙烯酸或甲基丙烯酸之酯之1種或2種以上作為成分的聚合物(丙烯酸系共聚物)等。作為上述烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或十二烷基等。 又，作為形成聚合物(丙烯酸系共聚物)之其他單體，並無特別限定，例如可列舉：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、伊康酸、馬來酸、富馬酸或巴豆酸等之類之含羧基單體，馬來酸酐或伊康酸酐等之類之酸酐單體，(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)甲酯等之類之含羥基單體，苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等之類之含磺酸基單體，或丙烯醯基磷酸2-羥基乙酯等之類之含磷酸基單體。 丙烯酸系樹脂中，重量平均分子量較佳為10萬以上，更佳為30萬～300萬，進而較佳為50萬～200萬。其原因在於，若為該數值範圍內，則接著性及耐熱性優異。再者，重量平均分子量係藉由GPC(Gel Permeation Chromatography，凝膠滲透層析法)進行測定並藉由聚苯乙烯換算計算出之值。 丙烯酸系樹脂較佳為包含官能基。官能基例如為羥基、羧基、腈基等。較佳為羥基、羧基。 樹脂成分100重量%中之熱塑性樹脂之含量較佳為10重量%以上，更佳為20重量%以上。若為10重量%以上，則可撓性良好。樹脂成分100重量%中之熱塑性樹脂之含量較佳為80重量%以下，更佳為70重量%以下。 作為熱硬化性樹脂，可列舉：環氧樹脂、酚樹脂等。 作為環氧樹脂，並無特別限定，例如可使用雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型等二官能環氧樹脂或多官能環氧樹脂、或乙內醯脲型、異氰尿酸三縮水甘油酯型或縮水甘油胺型等之環氧樹脂。該等環氧樹脂中，特佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型樹脂或四酚基乙烷型環氧樹脂。其原因在於，該等環氧樹脂富於與作為硬化劑之酚樹脂之反應性，耐熱性等優異。 環氧樹脂之環氧當量較佳為100 g/eq.以上，更佳為120 g/eq.以上。環氧樹脂之環氧當量較佳為1000 g/eq.以下，更佳為500 g/eq.以下。 再者，環氧樹脂之環氧當量可藉由JIS K 7236-2009中規定之方法來測定。 酚樹脂發揮作為環氧樹脂之硬化劑之作用，例如可列舉：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚樹脂，可溶酚醛型酚樹脂，聚對羥基苯乙烯等聚羥基苯乙烯等。該等酚樹脂中，特佳為苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於能夠提高半導體裝置之連接可靠性。 酚樹脂之羥基當量較佳為150 g/eq.以上，更佳為200 g/eq.以上。酚樹脂之羥基當量較佳為500 g/eq.以下，更佳為300 g/eq.以下。 關於環氧樹脂與酚樹脂之調配比例，例如較佳為以相對於環氧樹脂成分中之環氧基每1當量，酚樹脂中之羥基成為0.5～2.0當量之方式進行調配。更佳為0.8～1.2當量。即，其原因在於，若兩者之調配比例脫離該範圍，則不會進行充分之硬化反應，硬化物之特性變得容易劣化。 樹脂成分100重量%中之環氧樹脂及酚樹脂之合計含量較佳為20重量%以上，更佳為30重量%以上。環氧樹脂及酚樹脂之合計含量較佳為90重量%以下，更佳為80重量%以下。 接著劑層121可包含無機填充劑。作為無機填充劑，例如可列舉：二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽、鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊料、碳等。其中，較佳為二氧化矽、氧化鋁、銀等，更佳為二氧化矽。無機填充劑之平均粒徑較佳為0.001 μm～1 μm。填料之平均粒徑可藉由以下之方法來測定。將接著劑層121放入至坩堝中，於大氣氛圍下以700℃下灼燒2小時使其灰化，使得到之灰分分散於純水中並進行10分鐘超音波處理，使用雷射繞射散射式粒度分佈測定裝置(Beckman Coulter公司製造，「LS13320」；濕式法)求出平均粒徑。 接著劑層121中之無機填充劑之含量較佳為0重量%以上，更佳為1重量%以上，進而較佳為3重量%以上，進而更佳為20重量%以上。接著劑層121中之無機填充劑之含量較佳為85重量%以下，更佳為20重量%以下，進而較佳為15重量%以下。 接著劑層121除了含有上述成分以外，亦可適當含有膜製造中通常使用之調配劑，例如矽烷偶合劑、硬化促進劑、交聯劑等。 切晶黏晶膜12之製作方法包括例如對基材層122之第2區域122B進行電暈放電處理之步驟，及於基材層122上形成接著劑層121之步驟。電暈處理為藉由電暈放電照射而對塑膠膜、紙、金屬箔等基材表面進行改質之表面處理技術。若於金屬電極間插入介電體並施加高頻高電壓，則會於電極間於時間上、空間上無規地形成稱作流注電暈之絲狀之電漿。高能量之電子到達至通過相對電極側之高分子膜之表面層，並將高分子鍵之主鏈或側鏈切開。切斷之高分子表層變成自由基之狀態，氣相中之氧自由基或臭氧層與主鏈或側鏈進行再鍵結，藉此導入羥基、羰基等極性官能基。由於對基材表面賦予親水性，故而對疏水性高分子之密接性(潤濕性)提高，接著力變高。若導入之官能基與接著劑層121進行化學鍵結，則接著力變得更高。電暈放電處理後之基材層122之表面能例如為30達因/cm以上，較佳為35達因/cm以上。 作為用於部分進行電暈處理之主要方法，可列舉兩種方法。第一種係利用遮罩(遮蔽物)保護基材層122之一部分以使其不被電暈處理之方法。藉由在基材層122與放電電極之間配置遮罩，從而利用遮罩遮蔽基材層122之一部分。遮罩例如包含非導電材料。具有複數個遮罩之捲筒狀之物體、具有複數個遮罩之長條狀之非接著性膜、具有複數個遮罩之弱黏著之膠帶可反覆使用。第二種係使基材層122通過放電電極與具有凹凸之介電輥間之方法。該方法中，可僅將凸部改質。介電輥包含例如金屬芯及捲繞於金屬芯之介電層。介電層具有凹凸。凹部與電極之距離較佳為2 mm以上。介電層例如可具有絕緣性、導電性及電暈放電耐性。介電層例如包含氯系橡膠、PET橡膠、聚矽氧橡膠、陶瓷等。第二種方法比第一種方法簡單。但是，第二種方法有電暈處理部與未處理部之邊界比第一種方法模糊之傾向。 切晶黏晶帶1可用於製造半導體裝置。 如圖3所示，使聚光點對準照射前半導體晶圓4P之內部，沿著格子狀之分割預定線4L照射雷射光100，於照射前半導體晶圓4P形成改質區域41，得到半導體晶圓4。作為照射前半導體晶圓4P，可列舉：矽晶圓、碳化矽晶圓、化合物半導體晶圓等。作為化合物半導體晶圓，可列舉氮化鎵晶圓等。 雷射光100之照射條件例如可於以下之條件之範圍內適當調整。 (A)雷射光100 雷射光源 半導體雷射光激發Nd：YAG雷射光 波長 1064 nm 雷射光點截面面積 3.14×10-8 cm2 振盪形態 Q開關脈衝 重複頻率 100 kHz以下 脈衝寬度 1 μs以下 輸出 1 mJ以下 雷射光品質 TEM00 偏光特性 直線偏光 (B)聚光用透鏡 倍率 100倍以下 NA 0.55 相對於雷射光波長之透過率 100%以下 (C)載置照射前半導體晶圓之載置台之移動速度 280 mm/秒以下 如圖4所示，半導體晶圓4包含改質區域41。改質區域41比其他之區域脆弱。半導體晶圓4進一步包含半導體晶片5A、5B、5C、……、5F。 如圖5所示，從切晶黏晶帶1去除隔離膜11，藉由輥將切晶環31及利用加熱台加熱過之半導體晶圓4固定於切晶黏晶膜12。半導體晶圓4固定於晶圓固定區域12A。半導體晶圓4之固定例如係於40℃以上、較佳為45℃以上、更佳為50℃以上、進而較佳為55℃以上進行。半導體晶圓4之固定例如係於100℃以下、較佳為90℃以下進行。半導體晶圓4之固定壓力例如為1×105 Pa～1×107 Pa。輥速度例如為10 mm/sec。切晶環31係固定於切晶環固定區域12B。 如圖6所示，利用位於切晶黏晶膜12之下方之頂起機構33將切晶黏晶膜12頂起，使切晶黏晶膜12擴張。擴張之溫度較佳為10℃以下，更佳為0℃以下。溫度之下限例如為-20℃。 藉由切晶黏晶膜12之擴張，而以改質區域41為起點分斷半導體晶圓4，並且接著劑層121亦被分斷。其結果，於基材層122上形成附分斷後接著劑層121A之半導體晶片5A。 如圖7所示，使頂起機構33下降。其結果，切晶黏晶膜12產生鬆弛。鬆弛係於晶圓固定區域12A之周邊產生。 如圖8所示，利用位於切晶黏晶膜12之下方之吸附台32將切晶黏晶膜12頂起而使其擴張，邊維持擴張邊將切晶黏晶膜12吸引固定於吸附台32。 如圖9所示，於將切晶黏晶膜12吸引固定於吸附台32之狀態下使吸附台32下降。 於將切晶黏晶膜12吸引固定於吸附台32之狀態下，對切晶黏晶膜12之鬆弛吹送熱風而消除鬆弛。熱風之溫度較佳為170℃以上，更佳為180℃以上。熱風溫度之上限例如為240℃，較佳為220℃。 從基材層122剝離附分斷後接著劑層121A之半導體晶片5A。 如圖10所示，將附分斷後接著劑層121A之半導體晶片5A壓接於被接著體6。壓接例如係於80℃以上、較佳為90℃以上進行壓接。例如係於150℃以下、較佳為130℃以下進行壓接。被接著體6例如為引線框架、中介層、TAB(Tape Automated Bonding，帶式自動接合)膜、半導體晶片等。被接著體6具有端子部。 藉由在加壓氛圍下對附半導體晶片5A之被接著體6進行加熱，而使分斷後接著劑層121硬化。加壓氛圍例如為0.5 kg/cm2 (4.9×10-2 MPa)以上，較佳為1 kg/cm2 (9.8×10-2 MPa)以上，更佳為5 kg/cm2 (4.9×10-1 MPa)以上。例如係以120℃以上、較佳為150℃以上、更佳為170℃以上進行加熱。上限例如為260℃、200℃、180℃等。 如圖11所示，以焊接線7將半導體晶片5A之電極墊及被接著體6之端子部電性連接，利用密封樹脂8密封半導體晶片5A。 利用以上之方法得到之半導體裝置包含半導體晶片5A、被接著體6及切晶後之接著劑層121。切晶後之接著劑層121係將半導體晶片5A與被接著體6進行接著。半導體裝置進而包含用於覆蓋半導體晶片5A之密封樹脂8。 如上所述，半導體裝置之製造方法包括如下步驟：從切晶黏晶帶1去除隔離膜11，將半導體晶圓4固定於切晶黏晶膜12之接著劑層121；及對切晶黏晶膜12施加拉伸應力，形成附分斷後接著劑層121A之半導體晶片5A。 變化例1 第2區域122B為在電暈放電處理後塗佈有底塗劑之區域。 理想的是底塗劑與基材層122進行化學鍵結。底塗劑較佳為能與基材層122化學鍵結，能夠對接著劑層第2部121B顯示出較強之接著力。底塗劑例如包含交聯劑及聚合物。底塗劑之交聯劑例如為異氰酸酯系交聯劑、環氧系交聯劑等。就能夠於低溫下以短時間反應之觀點而言，較佳為異氰酸酯系交聯劑、環氧系交聯劑。底塗劑之聚合物可具有能與交聯劑反應之官能基。官能基例如為羥基等。底塗劑之厚度例如為1 μm。 變化例2 第1區域122A為經電暈放電處理之區域。 切晶黏晶膜12之製作方法例如包括對基材層122進行電暈放電處理之步驟及於基材層122上形成接著劑層121之步驟。對基材層122進行電暈放電處理之步驟中，可使第1區域122A之電暈放電處理之強度比第2區域122B之電暈放電處理之強度低。第1區域122A之電暈放電處理之強度亦可與第2區域122B之電暈放電處理之強度相同。於該情形時，接著劑層第1部121A較佳為包含脫模劑。作為脫模劑，可列舉：氟系、聚矽氧系、油系脫模劑等。另一方面，接著劑層第2部121B較佳為不包含此種脫模劑。 變化例3 第1區域122A為在電暈放電處理後塗佈有底塗劑之區域。 較佳為底塗劑之極性與接著劑層第1部121A之極性這兩者大不相同。底塗劑之表面能例如為5達因/cm以上且未達30達因/cm。接著劑層第1部121A之表面能例如超過30達因/cm且為50達因/cm以下。若底塗劑之彈性模數較低，則有接著劑層第1部121A與基材層122之剝離力變得過高之情況，故而室溫下之底塗劑之較佳之彈性模數例如為100 MPa以上。底塗劑之較佳例適用變化例1。 第1區域122A之電暈放電處理之強度可與第2區域122B之電暈放電處理之強度相同。兩者亦可不同。 變化例4 基材層122之第1主面為在電暈放電處理後塗佈有底塗劑之面。 第1區域122A之電暈放電處理之強度可與第2區域122B之電暈放電處理之強度相同。兩者亦可不同。底塗劑之較佳例適用變化例1。 變化例5 第1區域122A為經壓紋加工之區域。 變化例6 第2區域122B為經壓紋加工之區域。 變化例7 基材層122之第1主面為經壓紋加工之面。 變化例8 如圖12所示，接著劑層121包含接著劑層第1部121A及接著劑層第2部121B，不包含接著劑層第3部121C。接著劑層第1部121A例如呈圓盤狀。接著劑層第2部121B例如呈環形板狀。接著劑層第2部121B不與接著劑層第1部121A接觸。 接著劑層第2部121B之組成/物性可與接著劑層第1部121A之組成/物性不同。接著劑層第1部121A之組成/物性之較佳例適用實施例1。接著劑層第2部121B較佳為具有黏著性。構成接著劑層第2部121B之黏著劑可將例如丙烯酸系、橡膠系、乙烯基烷基醚系、聚矽氧系、聚酯系、聚醯胺系、胺基甲酸酯系、苯乙烯-二烯嵌段共聚物系等公知之黏著劑使用1種或組合2種以上使用。 接著劑層第2部121B較佳為包含能夠與經電暈放電處理之第2區域122B中之羥基、羧酸基等官能基反應之交聯劑及樹脂成分。 樹脂成分較佳為包含具有能夠與交聯劑反應之官能基之熱塑性樹脂。其原因在於，能夠將接著劑層第2部121B與基材層122進行化學鍵結。熱塑性樹脂之官能基例如為羥基、羧酸基、環氧基、胺基、巰基、苯酚基等。作為熱塑性樹脂，就官能基之調整等方面而言，較佳為丙烯酸系聚合物。作為丙烯酸系聚合物，例如可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸辛酯等(甲基)丙烯酸C1-C20烷基酯等(甲基)丙烯酸烷基酯之均聚物或共聚物；(甲基)丙烯酸烷基酯與其他共聚性單體——例如丙烯酸、甲基丙烯酸、伊康酸、富馬酸、馬來酸酐等含羧基或酸酐基之單體；(甲基)丙烯酸2-羥基乙酯等含羥基單體；(甲基)丙烯酸嗎啉酯等含胺基單體；(甲基)丙烯醯胺等含醯胺基單體；(甲基)丙烯腈等含氰基單體；(甲基)丙烯酸異𦯉酯等具有脂環式烴基之(甲基)丙烯酸酯等的共聚物等。接著劑層第2部121B中之樹脂成分之含量例如為94重量%以上，較佳為95重量%以上。接著劑層第2部121B中之樹脂成分之含量例如為99.99重量%以下，較佳為99.97重量%以下。 交聯劑例如為異氰酸酯系交聯劑、環氧系交聯劑、噁唑啉系交聯劑、過氧化物等。交聯劑可為單獨1種或組合2種以上。較佳為異氰酸酯系交聯劑、環氧系交聯劑。異氰酸酯系交聯劑例如為甲苯二異氰酸酯、二甲苯二異氰酸酯等芳香族異氰酸酯、異佛爾酮二異氰酸酯等脂環族異氰酸酯、六亞甲基二異氰酸酯等脂肪族異氰酸酯等。更具體而言，例如可列舉：伸丁基二異氰酸酯、六亞甲基二異氰酸酯等低級脂肪族多異氰酸酯類、伸環戊基二異氰酸酯、伸環己基二異氰酸酯、異佛爾酮二異氰酸酯等脂環族異氰酸酯類、2,4-甲苯二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯、苯二甲基二異氰酸酯、多亞甲基多苯基異氰酸酯等芳香族二異氰酸酯類、三羥甲基丙烷/甲苯二異氰酸酯三聚物加成物(Nippon Polyurethane Industry公司製造，商品名CORONATE L)、三羥甲基丙烷/六亞甲基二異氰酸酯三聚物加成物(Nippon Polyurethane Industry公司製造，商品名CORONATE HL)、六亞甲基二異氰酸酯之異氰尿酸酯體(Nippon Polyurethane Industry公司製造，商品名CORONATE HX)等異氰酸酯加成物、苯二甲基二異氰酸酯之三羥甲基丙烷加成物(三井化學公司製造，商品名D110N)、六亞甲基二異氰酸酯之三羥甲基丙烷加成物(三井化學公司製，商品名D160N)；聚醚多異氰酸酯、聚酯多異氰酸酯、以及該等與各種多元醇之加成物、藉由異氰尿酸酯鍵、縮二脲鍵、脲基甲酸酯鍵等經多官能化之多異氰酸酯等。該等之中，使用脂肪族異氰酸酯由於反應速度快而較佳。異氰酸酯系交聯劑可單獨使用1種，又可混合2種以上使用。接著劑層第2部121B中之異氰酸酯系交聯劑之含量例如相對於樹脂成分100重量份為0.01～5重量份，較佳為0.03～4重量份。可考慮凝集力、耐久性試驗中之剝離之阻止等而適當地含有。 接著劑層121可藉由網版印刷、輪轉網版印刷、噴墨印刷、凹版印刷、輥對輥(roll to roll)等製作。就生產性之觀點而言，較佳為輪轉網版印刷。該等塗覆方法可僅使用1種，亦可組合使用。該等方法中，有在塗覆中清漆暴露於空氣中之情況。較佳為使用能夠抑制塗覆中之清漆濃度變化之低揮發性之溶劑。此種溶劑例如為MIBK(methyl isobutyl ketone，甲基異丁基酮)、乙酸丁酯、環己酮、γ丁內酯、異佛爾酮、乙酸卡比醇酯、DMSO(dimethyl sulfoxide,二甲基亞碸)、DMAc(dimethylacetamide，二甲基乙醯胺)、NMP(N-Methyl pyrrolidone，N-甲基吡咯啶酮)等。 變化例8.1 第2區域122B為在電暈放電處理後塗佈有底塗劑之區域。變化例8.1為變化例8與變化例1之組合。變化例8.1之較佳例適用變化例1。 變化例8.2 第1區域122A為經電暈放電處理之區域。變化例8.2為變化例8與變化例2之組合。變化例8.2之較佳例適用變化例2。 變化例8.3 第1區域122A為在電暈放電處理後塗佈有底塗劑之區域。變化例8.3為變化例8與變化例3之組合。變化例8.3之較佳例適用變化例3。 變化例8.4 基材層122之第1主面為在電暈放電處理後塗佈有底塗劑之面。變化例8.4為變化例8與變化例4之組合。變化例8.4之較佳例適用變化例4。 變化例8.5 第1區域122A為經壓紋加工之區域。變化例8.5為變化例8與變化例5之組合。 變化例8.6 第2區域122B為經壓紋加工之區域。變化例8.6為變化例8與變化例6之組合。 變化例8.7 基材層122之第1主面為經壓紋加工之面。變化例8.7為變化例8與變化例7之組合。 變化例9 如圖13所示，接著劑層121包含第1層1211及第2層1212。第1層1211呈圓盤狀。第1層1211之兩面係由第1主面及與第1主面對向之第2主面定義。第1層1211之第1主面與隔離膜11接觸。第1層1211之第2主面與第2層1212接觸。第2層1212呈圓盤狀。第2層1212之兩面係由第1主面及與第1主面對向之第2主面定義。第2層1212之第1主面與第1層1211接觸。第2層1212之第2主面與基材層122接觸。 變化例9.1 第2區域122B為在電暈放電處理後塗佈有底塗劑之區域。變化例9.1為變化例9與變化例1之組合。變化例9.1之較佳例適用變化例1。 變化例9.2 第1區域122A為經電暈放電處理之區域。變化例9.2為變化例9與變化例2之組合。變化例9.2之較佳例適用變化例2。 變化例9.3 第1區域122A為在電暈放電處理後塗佈有底塗劑之區域。變化例9.3為變化例9與變化例3之組合。變化例9.3之較佳例適用變化例3。 變化例9.4 基材層122之第1主面為在電暈放電處理後塗佈有底塗劑之面。變化例9.4為變化例9與變化例4之組合。變化例9.4之較佳例適用變化例4。 變化例9.5 第1區域122A為經壓紋加工之區域。變化例9.5為變化例9與變化例5之組合。 變化例9.6 第2區域122B為經壓紋加工之區域。變化例9.6為變化例9與變化例6之組合。 變化例9.7 基材層122之第1主面為經壓紋加工之面。變化例9.7為變化例9與變化例7之組合。 變化例10 如圖14所示，接著劑層121包含第1層1211及第2層1212。第1層1211呈環形板狀。第1層1211位於切晶環固定區域12B。第1層1211之兩面係由第1主面及與第1主面對向之第2主面定義。第1層1211之第1主面與隔離膜11接觸。第1層1211之第2主面與第2層1212接觸。第1層1211可具有黏著性。第2層1212呈圓盤狀。第2層1212之兩面係由第1主面及與第1主面對向之第2主面定義。第2層1212之第1主面係於切晶環固定區域12B與第1層1211接觸。第2層1212之第2主面與基材層122接觸。 變化例10.1 第2區域122B為在電暈放電處理後塗佈有底塗劑之區域。變化例10.1為變化例10與變化例1之組合。變化例10.1之較佳例適用變化例1。 變化例10.2 第1區域122A為經電暈放電處理之區域。變化例10.2為變化例10與變化例2之組合。變化例10.2之較佳例適用變化例2。 變化例10.3 第1區域122A為在電暈放電處理後塗佈有底塗劑之區域。變化例10.3為變化例10與變化例3之組合。變化例10.3之較佳例適用變化例3。 變化例10.4 基材層122之第1主面為在電暈放電處理後塗佈有底塗劑之面。變化例10.4為變化例10與變化例4之組合。變化例10.4之較佳例適用變化例4。 變化例10.5 第1區域122A為經壓紋加工之區域。變化例10.5為變化例10與變化例5之組合。 變化例10.6 第2區域122B為經壓紋加工之區域。變化例10.6為變化例10與變化例6之組合。 變化例10.7 基材層122之第1主面為經壓紋加工之面。變化例10.7為變化例10與變化例7之組合。 變化例11 變化例11中，將切晶黏晶帶1用於DBG法。具體而言，包括如下步驟：將在半導體晶圓之表面(外表面)設置有槽之半導體晶圓固定於背面研磨膜，進行半導體晶圓之背面磨削；從切晶黏晶帶1去除隔離膜11，將磨削後之半導體晶圓固定於切晶黏晶膜12之接著劑層121；及對切晶黏晶膜12施加拉伸應力，形成附分斷後接著劑層之半導體晶片。 該等變化例可與其他之變化例進行組合。 [實施例] 以下，用實施例詳細地對本發明進行說明，但本發明只要不超出其主旨，則不限定於以下之實施例。 實施例1～4、比較例2～3之切晶黏晶膜之製作 根據表1將丙烯酸系聚合物、二氧化矽填料、固體環氧樹脂、固體酚樹脂溶解或分散於甲基乙基酮中，塗覆於PET隔離膜，於130℃下使甲基乙基酮揮發2分鐘，得到厚度10 μm之接著膜。使用電暈處理機(PILLAR TECHNOLOGIES公司製造之500系列)在表1所示之條件下對倉敷紡織公司製造之厚度130 μm之EVA膜進行電暈放電處理。將接著膜以60℃、10 mm/sec、0.15 MPa積層於電暈處理後之EVA膜，得到實施例1～4、比較例2～3之切晶黏晶膜。各切晶黏晶膜具有EVA膜及位於EVA膜上之接著膜。EVA膜之兩面係由與接著膜接觸之第1主面及與第1主面對向之第2主面來定義。接著膜之兩面由第1主面及與EVA膜接觸之第2主面定義。各切晶黏晶膜呈圓盤狀。各切晶黏晶膜中，切晶環固定區域位於晶圓固定區域之周邊。 電暈處理量 電暈處理量係由下述式表示。 放電處理量(W·min/m2 )＝放電電極之電壓(W)÷電極寬度(m)÷速度(m/min) 比較例1之切晶黏晶膜之製作 未對EVA膜進行電暈放電處理，除此以外利用與實施例1相同之程序製作切晶黏晶膜。 接著膜與EVA膜之90度剝離力 於室溫23℃下將襯底膠帶(日東電工公司製造之BT-315)貼於切晶黏晶膜之接著膜，切出長度120 mm×寬度50 mm之切晶黏晶膜試片。將AUTOGRAPH AGS-J(島津製作所製造)之腔室調整至23℃或-15℃，以剝離角度90度、剝離速度300 mm/min進行T剝離試驗。將剝離力之平均值示於表1。 表面自由能 於室溫23℃、50±10%RH下將襯底膠帶(日東電工公司製造之BT-315)貼於切晶黏晶膜之接著膜，從EVA膜剝離接著膜。於剝離後5分鐘內將依據JIS K 6768：1999製備之具有階梯性增加之表面張力之一系列之試驗用混合液滴加至EVA膜之第1主面及接著膜之第2主面，利用10 mm寬度之刮板進行擴散，藉此形成長度5 cm左右之液膜，於2秒後觀察液膜，選擇準確維持液膜形狀2秒之試驗用混合液。將所選擇之試驗用混合液之表面張力示於表1。 分斷性、拾取性 使用DISCO公司製造之切晶裝置(DFD6361)，對12英吋之裸晶圓以8 mm×12 mm切出寬度20～25 μm、深度50 μm之切口。在切口面貼附背面研磨膠帶(日東電工公司製造之UB-3083D)，利用DISCO公司製造之背面研磨裝置(DGP8760)進行磨削直至裸晶圓厚度為20 μm為止。藉由層壓機以60℃、0.15 MPa、10 mm/sec將磨削後晶圓貼合於切晶黏晶膜之接著膜。藉由層壓機以60℃、0.15 MPa、10 mm/sec將切晶環固定於切晶黏晶膜之接著膜。從磨削後晶圓剝離背面研磨膠帶，使用冷擴幅機(Cool expander)(DISCO公司製造之DDS3200)，以冷卻溫度-15℃、速度1 mm/sec、拉伸量11 mm來分斷磨削後晶圓，利用加溫台以溫度80℃、速度1 mm/sec、拉伸量7 mm進行拉伸，以200℃使其熱收縮(heat shrink)。利用以上之方法形成了附分斷後接著膜之晶片。為了確認分斷後接著膜是否沿著分斷線斷開，於各例中觀察30個附分斷後接著膜之晶片。藉由以下之式求出分斷率，分斷率為80%以上記為○，未達80%記為×，將判定結果示於表1。 分斷率 =具有沿著分斷線斷開之分斷後接著膜之晶片之數量/30 拾取性 利用新川公司製造之黏晶機SPA300拾取10個附分斷後接著膜之晶片，成功數為8個以上之情形記為○，未達8個之情形記為×。 [表1]

Figure 106133085-A0304-0001
Hereinafter, the present invention will be described in detail with reference to embodiments, but the present invention is not limited to these embodiments. Embodiment 1 As shown in FIG. 1, the dicing die bonding tape 1 includes an isolation film 11 and dicing die bonding films 12a, 12b, 12c, ..., 12m (hereinafter collectively referred to as "chip dicing die bonding film 12"). The diced crystal bonding tape 1 may be in the shape of a roll. The isolation film 11 has a strip shape. The isolation film 11 is, for example, a polyethylene terephthalate (PET) film that has been peeled off. The dicing die sticking film 12 is located on the isolation film 11. The distance between the diced chip adhesive film 12a and the diced chip adhesive film 12b, the distance between the diced chip adhesive film 12b and the diced chip adhesive film 12c,... the diced chip adhesive film 12l and the diced chip adhesive film The distance between 12m is fixed. The diced crystal mucosa 12 has a disc shape. As shown in FIG. 2, the dicing die bonding film 12 includes a wafer fixing area 12A and a dicing ring fixing area 12B. The wafer fixing area 12A may have a disk shape, for example. The dicing ring fixing area 12B is located at the periphery of the wafer fixing area 12A. The dicing ring fixing area 12B may have a ring-shaped plate shape, for example. The dicing die bonding film 12 includes an adhesive layer 121. The adhesive layer 121 has a disc shape. The thickness of the adhesive layer 121 is, for example, 2 μm or more, preferably 5 μm or more. The thickness of the adhesive layer 121 is, for example, 200 μm or less, preferably 150 μm or less, more preferably 100 μm or less, and still more preferably 50 μm or less. The two surfaces of the adhesive layer 121 are defined by the first main surface and the second main surface facing the first main surface. The first main surface of the adhesive layer 121 is in contact with the isolation film 11. The adhesive layer 121 includes at least the first portion 121A of the adhesive layer belonging to the wafer fixing region 12A. The adhesive layer 121 includes at least the second portion 121B of the adhesive layer belonging to the dicing ring fixing region 12B. The adhesive layer 121 includes the third part 121C of the adhesive layer located between the first part 121A of the adhesive layer and the second part 121B of the adhesive layer. The third part 121C of the adhesive layer connects the first part 121A of the adhesive layer and the second part 121B of the adhesive layer. The third portion 121C of the adhesive layer may have, for example, an annular plate shape. The dicing die bonding film 12 includes a substrate layer 122. The base layer 122 has a disc shape. The thickness of the base layer 122 is, for example, 50 μm or more, preferably 80 μm or more. The thickness of the base layer 122 is, for example, 200 μm or less, preferably 170 μm or less. Both surfaces of the base layer 122 are defined by a first main surface contacting the adhesive layer 121 and a second main surface facing the first main surface. The first main surface of the base layer 122 includes a first region 122A in the wafer fixing region 12A. The first area 122A is an area where no pre-processing has been performed. The pre-treatment includes corona discharge treatment, plasma treatment, primer coating, peeling treatment, embossing, ultraviolet treatment, heating treatment, etc. Examples of the release agent used for the release treatment include silicone-based release agents and fluorine-based release agents. The first main surface of the base layer 122 includes a second area 122B in the dicing ring fixing area 12B. The second area 122B is an area treated by corona discharge. The surface free energy E 1 of the first principal surface of the base material layer 122 in the wafer fixing region 12A is 32 mN/m or more. Since it is 32 mN/m or more, the base layer 122 shows good wettability to the adhesive layer 121. The upper limit of E 1 is , for example, 39 mN/m, preferably 36 mN/m. If it is 39 mN/m or less, since the adhesiveness of the base layer 122 to the adhesive layer 121 is not too high, the semiconductor wafer of the adhesive layer can be easily peeled off after the semiconductor wafer is divided. The surface free energy E 2 of the second principal surface of the adhesive layer 121 in the wafer fixing region 12A is preferably 33 mN/m or more, more preferably 34 mN/m or more. The upper limit of E 2 is , for example, 50 mN/m, preferably 45 mN/m. The surface free energy of the first main surface of the adhesive layer 121 in the wafer fixing region 12A is preferably 33 mN/m or more, more preferably 34 mN/m or more. If it is 33 mN/m or more, the adhesive layer 121 can be easily peeled from the separator 11. The upper limit of the surface free energy of the first main surface of the adhesive layer 121 is, for example, 50 mN/m, preferably 45 mN/m. If it is 50 mN/m or less, the liquid for making the adhesive layer 121 can be easily applied to the isolation film 11. The difference between E 2 and E 1 is preferably 15 mN/m or less, more preferably 13 mN/m or less. The difference between E 2 and E 1 is preferably 1 mN/m or more. When it is less than 1 mN/m or more than 15 mN/m, the 90-degree peeling force of the adhesive layer 121 and the base layer 122 at 23° C. tends to become too high. In the wafer fixing area 12A of the dicing die bonding film 12, the 90-degree peeling force of the adhesive layer 121 and the base material layer 122 at 23° C. is 0.02 N/20 mm or more. Since it is 0.02 N/20 mm or more, the semiconductor wafer/semiconductor wafer is not easily peeled off from the adhesive layer 121 during the process from the fixing of the semiconductor wafer to the pickup of the semiconductor wafer. If the 90-degree peeling force at 23°C is 0.1 N/20 mm or more, the adhesive layer 121 can be prevented from adhering to the isolation film 11 when the separation film 11 is removed from the chip adhesive film 12. 90° at 23°C The upper limit of the peeling force is 0.5 N/20 mm, preferably 0.3 N/20 mm. Since it is 0.5 N/20 mm or less, after the semiconductor wafer is split, the semiconductor wafer of the adhesive layer can be easily peeled off. In the wafer fixing area 12A of the dicing die bonding film 12, the 90-degree peeling force of the adhesive layer 121 and the substrate layer 122 at -15°C is 0.1 N/20 mm or more, preferably 0.3 N/20 mm above. Since it is 0.1 N/20 mm or more, the adhesive layer can be separated accurately. It is considered that the reason is that the force is effectively transmitted to the adhesive layer. The upper limit of the 90-degree peel force at -15°C is, for example, 10 N/20 mm. The substrate layer 122 may be selected from, for example, polyether ether ketone film, polyether imide film, polyarylate film, polyethylene naphthalate film, polyethylene film, polypropylene film, polybutene film, poly Butadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polybutylene terephthalate film, polyurethane film , Ethylene-vinyl acetate copolymer film (EVA film), ionic polymer resin film, ethylene-(meth)acrylic acid copolymer film, ethylene-(meth)acrylate copolymer film, polystyrene film and polycarbonate Plastic films such as ester films, etc. It is desirable that the base layer 122 has a certain degree of stretchability, and therefore, a polyethylene film, a polypropylene film, an ethylene-vinyl acetate copolymer film, or an ionomer resin film is preferable. The storage elastic modulus of the adhesive layer 121 at 23° C. is preferably 10 GPa or less, more preferably 5 GPa or less. If it is 10 GPa or less, the adhesion to the base layer 122 is high, and it is possible to suppress peeling between the adhesive layer 121 and the base layer 122 after breaking. The lower limit of the storage elastic modulus at 23°C is, for example, 1 MPa. The adhesive layer 121 contains a resin component. As a resin component, a thermoplastic resin, a thermosetting resin, etc. are mentioned. As a thermoplastic resin, acrylic resin is mentioned, for example. The acrylic resin is not particularly limited, and one or two or more types of esters of acrylic acid or methacrylic acid having a carbon number of 30 or less, particularly a linear or branched alkyl group having a carbon number of 4 to 18 can be mentioned as Component polymer (acrylic copolymer) etc. Examples of the aforementioned alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, tertiary butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, decyl Octaalkyl, or dodecyl, etc. In addition, the other monomers forming the polymer (acrylic copolymer) are not particularly limited, and examples include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, Carboxyl group-containing monomers such as fumaric acid or crotonic acid, acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate Ester, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, (meth) Hydroxy monomers such as 12-hydroxylauryl acrylate or (4-hydroxymethylcyclohexyl) methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamide-2 -Sulphonic acid group-containing monomers such as methyl propane sulfonic acid, (meth)acrylamide propane sulfonic acid, sulfopropyl (meth)acrylate or (meth)acryloxynaphthalene sulfonic acid, or Phosphoric acid group-containing monomers such as 2-hydroxyethyl acrylate and the like. In the acrylic resin, the weight average molecular weight is preferably 100,000 or more, more preferably 300,000 to 3 million, and still more preferably 500,000 to 2 million. The reason is that if it is within this numerical range, adhesiveness and heat resistance are excellent. In addition, the weight average molecular weight is a value calculated by GPC (Gel Permeation Chromatography) and calculated by polystyrene conversion. The acrylic resin preferably contains a functional group. The functional group is, for example, a hydroxyl group, a carboxyl group, a nitrile group, and the like. Preferably, it is a hydroxyl group and a carboxyl group. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, more preferably 20% by weight or more. If it is 10% by weight or more, flexibility is good. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 80% by weight or less, more preferably 70% by weight or less. Examples of thermosetting resins include epoxy resins and phenol resins. The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, Naphthalene type, sulphur type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type and other difunctional epoxy or multifunctional epoxy resins, or hydantoin type , Triglycidyl isocyanurate type or glycidylamine type epoxy resin. Among these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trihydroxyphenylmethane type resins or tetraphenol ethane type epoxy resins are particularly preferred. The reason is that these epoxy resins are rich in reactivity with phenol resins as hardeners, and are excellent in heat resistance and the like. The epoxy equivalent of the epoxy resin is preferably 100 g/eq. or more, more preferably 120 g/eq. or more. The epoxy equivalent of the epoxy resin is preferably 1000 g/eq. or less, more preferably 500 g/eq. or less. Furthermore, the epoxy equivalent of epoxy resin can be measured by the method specified in JIS K 7236-2009. Phenolic resins function as hardeners for epoxy resins. Examples include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tertiary butyl phenol novolac resins, nonylphenol novolac resins, etc. Novolak-type phenol resin, resol-type phenol resin, polyhydroxystyrene such as poly(p-hydroxystyrene), etc. Among these phenol resins, phenol novolak resins and phenol aralkyl resins are particularly preferred. The reason is that the connection reliability of the semiconductor device can be improved. The hydroxyl equivalent of the phenol resin is preferably 150 g/eq. or more, more preferably 200 g/eq. or more. The hydroxyl equivalent of the phenol resin is preferably 500 g/eq. or less, more preferably 300 g/eq. or less. Regarding the blending ratio of the epoxy resin and the phenol resin, for example, it is preferably blended so that the hydroxyl group in the phenol resin becomes 0.5 to 2.0 equivalents per 1 equivalent of the epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. That is, the reason is that if the blending ratio of the two is out of this range, a sufficient curing reaction will not proceed, and the properties of the cured product will easily deteriorate. The total content of the epoxy resin and the phenol resin in 100% by weight of the resin component is preferably 20% by weight or more, more preferably 30% by weight or more. The total content of the epoxy resin and the phenol resin is preferably 90% by weight or less, more preferably 80% by weight or less. The adhesive layer 121 may include an inorganic filler. Examples of inorganic fillers include: silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, Tin, zinc, palladium, solder, carbon, etc. Among them, silicon dioxide, aluminum oxide, silver, etc. are preferred, and silicon dioxide is more preferred. The average particle size of the inorganic filler is preferably 0.001 μm to 1 μm. The average particle size of the filler can be measured by the following method. Put the adhesive layer 121 into a crucible and burn it at 700°C for 2 hours in an atmospheric atmosphere to make it ash, so that the resulting ash is dispersed in pure water and subjected to ultrasonic treatment for 10 minutes, using laser diffraction A scattering particle size distribution measuring device (manufactured by Beckman Coulter, "LS13320"; wet method) was used to determine the average particle size. The content of the inorganic filler in the adhesive layer 121 is preferably 0% by weight or more, more preferably 1% by weight or more, still more preferably 3% by weight or more, and even more preferably 20% by weight or more. The content of the inorganic filler in the adhesive layer 121 is preferably 85% by weight or less, more preferably 20% by weight or less, and still more preferably 15% by weight or less. In addition to the above-mentioned components, the adhesive layer 121 may also appropriately contain a compounding agent commonly used in film production, such as a silane coupling agent, a hardening accelerator, a crosslinking agent, and the like. The manufacturing method of the dicing die bonding film 12 includes, for example, a step of corona discharge treatment on the second region 122B of the base layer 122 and a step of forming an adhesive layer 121 on the base layer 122. Corona treatment is a surface treatment technology that modifies the surface of substrates such as plastic film, paper, and metal foil by corona discharge irradiation. If a dielectric is inserted between the metal electrodes and a high-frequency high voltage is applied, a filamentous plasma called a streamer corona will be formed randomly in time and space between the electrodes. The high-energy electrons reach the surface layer of the polymer film passing through the opposite electrode and cut the main chain or side chain of the polymer bond. The cut polymer surface layer becomes a state of free radicals, and the oxygen radicals or ozone layer in the gas phase are re-bonded with the main chain or side chains, thereby introducing polar functional groups such as hydroxyl groups and carbonyl groups. Since hydrophilicity is imparted to the surface of the substrate, the adhesion (wettability) to the hydrophobic polymer is improved, and the adhesive force becomes higher. If the introduced functional group is chemically bonded to the adhesive layer 121, the adhesive force becomes higher. The surface energy of the substrate layer 122 after the corona discharge treatment is, for example, 30 dyne/cm or more, preferably 35 dyne/cm or more. As the main method for partial corona treatment, two methods can be cited. The first method is to use a mask (shield) to protect a part of the substrate layer 122 from corona treatment. By disposing a mask between the substrate layer 122 and the discharge electrode, a part of the substrate layer 122 is covered by the mask. The mask includes, for example, a non-conductive material. Roll-shaped objects with multiple masks, long non-adhesive films with multiple masks, and weakly adhesive tapes with multiple masks can be used repeatedly. The second method is to pass the base material layer 122 between the discharge electrode and the uneven dielectric roller. In this method, only the convex portion can be modified. The dielectric roller includes, for example, a metal core and a dielectric layer wound around the metal core. The dielectric layer has unevenness. The distance between the recess and the electrode is preferably 2 mm or more. The dielectric layer may have insulation, conductivity, and corona discharge resistance, for example. The dielectric layer includes, for example, chlorine-based rubber, PET rubber, silicone rubber, ceramics, and the like. The second method is simpler than the first method. However, the second method tends to blur the boundary between the corona treated part and the untreated part than the first method. The dicing die bonding tape 1 can be used to manufacture semiconductor devices. As shown in FIG. 3, the condensing point is aligned with the inside of the semiconductor wafer 4P before irradiation, and the laser light 100 is irradiated along the grid-like planned dividing line 4L to form a modified region 41 on the semiconductor wafer 4P before irradiation to obtain a semiconductor Wafer 4. Examples of the semiconductor wafer 4P before irradiation include silicon wafers, silicon carbide wafers, compound semiconductor wafers, and the like. Examples of compound semiconductor wafers include gallium nitride wafers and the like. The irradiation conditions of the laser light 100 can be appropriately adjusted within the range of the following conditions, for example. (A) Laser light 100 Laser light source Semiconductor laser light excitation Nd: YAG laser light wavelength 1064 nm Laser spot cross-sectional area 3.14×10 -8 cm 2 Oscillation form Q-switch pulse repetition frequency 100 kHz or less Pulse width 1 μs or less output 1 Laser light quality below mJ TEM00 Polarization characteristics Linear polarized light (B) Condensing lens magnification 100 times or less NA 0.55 Transmittance with respect to the wavelength of the laser light 100% or less (C) Movement speed of the semiconductor wafer before mounting and irradiation Below 280 mm/sec, as shown in FIG. 4, the semiconductor wafer 4 includes a modified region 41. The modified area 41 is weaker than other areas. The semiconductor wafer 4 further includes semiconductor wafers 5A, 5B, 5C, ..., 5F. As shown in FIG. 5, the isolation film 11 is removed from the dicing die bonding tape 1, and the dicing ring 31 and the semiconductor wafer 4 heated by a heating stage are fixed to the dicing die bonding film 12 by a roller. The semiconductor wafer 4 is fixed to the wafer fixing area 12A. The fixing of the semiconductor wafer 4 is performed, for example, at 40°C or higher, preferably 45°C or higher, more preferably 50°C or higher, and still more preferably 55°C or higher. The fixing of the semiconductor wafer 4 is performed, for example, at 100° C. or lower, preferably at 90° C. or lower. The fixing pressure of the semiconductor wafer 4 is, for example, 1×10 5 Pa to 1×10 7 Pa. The roller speed is, for example, 10 mm/sec. The dicing ring 31 is fixed to the dicing ring fixing area 12B. As shown in FIG. 6, the lifting mechanism 33 located under the dicing adhesive film 12 is used to lift the dicing adhesive film 12 to expand the dicing adhesive film 12. The temperature of expansion is preferably 10°C or less, more preferably 0°C or less. The lower temperature limit is, for example, -20°C. By the expansion of the dicing die bonding film 12, the semiconductor wafer 4 is divided from the modified region 41 as a starting point, and the adhesive layer 121 is also divided. As a result, a semiconductor wafer 5A with a post-parting adhesive layer 121A is formed on the base layer 122. As shown in FIG. 7, the jacking-up mechanism 33 is lowered. As a result, the dicing mucous film 12 is loosened. The slack is generated at the periphery of the wafer fixing area 12A. As shown in FIG. 8, the dicing mucous film 12 is lifted up and expanded by the suction table 32 located below the dicing mucous film 12, and the dicing mucous film 12 is attracted and fixed to the suction table while maintaining the expansion. 32. As shown in FIG. 9, the suction table 32 is lowered in a state where the diced wafer 12 is sucked and fixed to the suction table 32. In the state of sucking and fixing the chip adhesive film 12 to the suction table 32, hot air is blown to the slack of the chip adhesive film 12 to eliminate the slack. The temperature of the hot air is preferably 170°C or higher, more preferably 180°C or higher. The upper limit of the hot air temperature is, for example, 240°C, preferably 220°C. The semiconductor wafer 5A with the separated adhesive layer 121A is peeled from the base layer 122. As shown in FIG. 10, the semiconductor wafer 5A with the separated adhesive layer 121A is crimped to the bonded body 6. The crimping is performed at 80°C or higher, preferably at 90°C or higher, for example. For example, pressure bonding is performed at 150°C or lower, preferably 130°C or lower. The adherend 6 is, for example, a lead frame, an interposer, a TAB (Tape Automated Bonding) film, a semiconductor wafer, or the like. The adherend 6 has a terminal part. By heating the adherend 6 of the semiconductor wafer 5A in a pressurized atmosphere, the adhesive layer 121 after the separation is hardened. The pressurized atmosphere is, for example, 0.5 kg/cm 2 (4.9×10 -2 MPa) or more, preferably 1 kg/cm 2 (9.8×10 -2 MPa) or more, and more preferably 5 kg/cm 2 (4.9×10 -1 MPa) above. For example, heating is performed at 120°C or higher, preferably 150°C or higher, and more preferably 170°C or higher. The upper limit is, for example, 260°C, 200°C, 180°C, or the like. As shown in FIG. 11, the electrode pads of the semiconductor chip 5A and the terminal portion of the adherend 6 are electrically connected by bonding wires 7, and the semiconductor chip 5A is sealed with a sealing resin 8. The semiconductor device obtained by the above method includes a semiconductor wafer 5A, a bonded body 6 and an adhesive layer 121 after dicing. The adhesive layer 121 after dicing is used to bond the semiconductor wafer 5A and the adherend 6. The semiconductor device further includes a sealing resin 8 for covering the semiconductor wafer 5A. As described above, the manufacturing method of a semiconductor device includes the following steps: removing the isolation film 11 from the dicing die bonding tape 1 and fixing the semiconductor wafer 4 to the adhesive layer 121 of the dicing die bonding film 12; Tensile stress is applied to the film 12 to form a semiconductor wafer 5A with an adhesive layer 121A after breaking. Modification Example 1 The second region 122B is a region coated with a primer after the corona discharge treatment. It is desirable that the primer and the base material layer 122 are chemically bonded. The primer is preferably capable of chemically bonding to the base layer 122 and can exhibit a strong adhesive force to the second portion 121B of the adhesive layer. The primer includes, for example, a crosslinking agent and a polymer. The cross-linking agent of the primer is, for example, an isocyanate-based cross-linking agent, an epoxy-based cross-linking agent, and the like. From the viewpoint of being able to react in a short time at a low temperature, an isocyanate-based crosslinking agent and an epoxy-based crosslinking agent are preferred. The polymer of the primer may have a functional group capable of reacting with the crosslinking agent. The functional group is, for example, a hydroxyl group and the like. The thickness of the primer is, for example, 1 μm. Modification 2 The first area 122A is an area treated by corona discharge. The manufacturing method of the dicing die bonding film 12 includes, for example, a step of corona discharge treatment on the base layer 122 and a step of forming an adhesive layer 121 on the base layer 122. In the step of corona discharge treatment on the base material layer 122, the intensity of the corona discharge treatment in the first region 122A can be made lower than the intensity of the corona discharge treatment in the second region 122B. The intensity of the corona discharge treatment in the first area 122A may be the same as the intensity of the corona discharge treatment in the second area 122B. In this case, the first part 121A of the adhesive layer preferably contains a release agent. Examples of mold release agents include fluorine-based, silicone-based, and oil-based mold release agents. On the other hand, it is preferable that the second part 121B of the adhesive layer does not contain such a release agent. Modification Example 3 The first region 122A is a region coated with a primer after the corona discharge treatment. It is preferable that the polarity of the primer and the polarity of the first part 121A of the adhesive layer are quite different. The surface energy of the primer is, for example, 5 dyne/cm or more and less than 30 dyne/cm. The surface energy of the first part 121A of the adhesive layer exceeds 30 dynes/cm and is 50 dynes/cm or less, for example. If the modulus of elasticity of the primer is low, the peeling force between the first part 121A of the adhesive layer and the base layer 122 may become too high. Therefore, the better modulus of elasticity of the primer at room temperature is, for example Above 100 MPa. The preferred example of the primer is modified example 1. The intensity of the corona discharge treatment in the first area 122A may be the same as the intensity of the corona discharge treatment in the second area 122B. The two can be different. Modification 4 The first main surface of the base material layer 122 is the surface coated with the primer after the corona discharge treatment. The intensity of the corona discharge treatment in the first area 122A may be the same as the intensity of the corona discharge treatment in the second area 122B. The two can be different. The preferred example of the primer is modified example 1. Modification 5 The first area 122A is an embossed area. Modification 6 The second area 122B is an embossed area. Modification Example 7 The first main surface of the base layer 122 is an embossed surface. Modification 8 As shown in FIG. 12, the adhesive layer 121 includes the first part 121A of the adhesive layer and the second part 121B of the adhesive layer, but does not include the third part 121C of the adhesive layer. The first part 121A of the adhesive layer has a disk shape, for example. The second portion 121B of the adhesive layer has, for example, an annular plate shape. The second part 121B of the adhesive layer is not in contact with the first part 121A of the adhesive layer. The composition/physical properties of the second part 121B of the adhesive layer may be different from the composition/physical properties of the first part 121A of the adhesive layer. The preferred example of the composition/physical properties of the first part 121A of the adhesive layer is applied to the first embodiment. The second part 121B of the adhesive layer preferably has adhesiveness. The adhesive constituting the second part 121B of the adhesive layer can be, for example, acrylic, rubber, vinyl alkyl ether, silicone, polyester, polyamide, urethane, styrene -A known adhesive such as a diene block copolymer is used alone or in combination of two or more. The second portion 121B of the adhesive layer preferably contains a crosslinking agent and a resin component capable of reacting with functional groups such as a hydroxyl group and a carboxylic acid group in the second region 122B subjected to the corona discharge treatment. The resin component preferably contains a thermoplastic resin having a functional group capable of reacting with a crosslinking agent. The reason is that the second portion 121B of the adhesive layer and the base layer 122 can be chemically bonded. The functional group of the thermoplastic resin is, for example, a hydroxyl group, a carboxylic acid group, an epoxy group, an amino group, a mercapto group, a phenol group, and the like. As the thermoplastic resin, in terms of adjustment of functional groups, etc., an acrylic polymer is preferred. Examples of acrylic polymers include: methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth) Homopolymers or copolymers of (meth)acrylic acid alkyl esters such as octyl acrylate and other (meth)acrylic acid C1-C20 alkyl esters; (meth)acrylic acid alkyl esters and other copolymerizable monomers-such as acrylic acid , Methacrylic acid, itaconic acid, fumaric acid, maleic anhydride and other monomers containing carboxyl or acid anhydride groups; 2-hydroxyethyl (meth)acrylate and other hydroxyl-containing monomers; (meth) morpholine acrylate Monomers containing amine groups such as (meth)acrylamide; monomers containing amine groups such as (meth)acrylonitrile; monomers containing cyano groups such as (meth)acrylonitrile; Copolymers of (meth)acrylate and the like. The content of the resin component in the second part 121B of the adhesive layer is, for example, 94% by weight or more, and preferably 95% by weight or more. The content of the resin component in the second part 121B of the adhesive layer is, for example, 99.99% by weight or less, preferably 99.97% by weight or less. The cross-linking agent is, for example, an isocyanate-based cross-linking agent, an epoxy-based cross-linking agent, an oxazoline-based cross-linking agent, a peroxide, and the like. The crosslinking agent may be one kind alone or in combination of two or more kinds. Preferred are isocyanate-based crosslinking agents and epoxy-based crosslinking agents. The isocyanate-based crosslinking agent is, for example, aromatic isocyanates such as toluene diisocyanate and xylene diisocyanate, alicyclic isocyanates such as isophorone diisocyanate, and aliphatic isocyanates such as hexamethylene diisocyanate. More specifically, for example, lower aliphatic polyisocyanates such as butylene diisocyanate and hexamethylene diisocyanate, esters such as cyclopentyl diisocyanate, cyclohexyl diisocyanate, and isophorone diisocyanate, etc. Aromatic diisocyanates such as cyclic isocyanates, 2,4-toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, xylylene diisocyanate, polymethylene polyphenyl isocyanate, trimethylol Trimethylolpropane/toluene diisocyanate trimer adduct (manufactured by Nippon Polyurethane Industry, trade name CORONATE L), trimethylolpropane/hexamethylene diisocyanate trimer adduct (manufactured by Nippon Polyurethane Industry, Trade name CORONATE HL), isocyanurate body of hexamethylene diisocyanate (manufactured by Nippon Polyurethane Industry, trade name CORONATE HX) and other isocyanate adducts, trimethylolpropane addition of xylylene diisocyanate Product (manufactured by Mitsui Chemicals, trade name D110N), trimethylolpropane adduct of hexamethylene diisocyanate (manufactured by Mitsui Chemicals, trade name D160N); polyether polyisocyanate, polyester polyisocyanate, and These adducts with various polyols, polyisocyanates which are polyfunctionalized through isocyanurate bonds, biuret bonds, allophanate bonds, etc. Among them, the use of aliphatic isocyanates is preferable because of the fast reaction speed. The isocyanate-based crosslinking agent may be used alone or in combination of two or more kinds. The content of the isocyanate-based crosslinking agent in the second part 121B of the adhesive layer is, for example, 0.01 to 5 parts by weight, preferably 0.03 to 4 parts by weight, relative to 100 parts by weight of the resin component. It can be appropriately contained in consideration of cohesive force, prevention of peeling in durability test, etc. The adhesive layer 121 can be produced by screen printing, rotary screen printing, inkjet printing, gravure printing, roll to roll, or the like. From the viewpoint of productivity, rotary screen printing is preferred. Only one kind of these coating methods may be used, or they may be used in combination. Among these methods, the varnish may be exposed to the air during coating. It is preferable to use a low-volatility solvent capable of suppressing the change in the concentration of the varnish during coating. Such solvents are, for example, MIBK (methyl isobutyl ketone, methyl isobutyl ketone), butyl acetate, cyclohexanone, gamma butyrolactone, isophorone, carbitol acetate, DMSO (dimethyl sulfoxide, dimethyl sulfoxide) Base pyrrolidone), DMAc (dimethylacetamide, dimethylacetamide), NMP (N-Methyl pyrrolidone, N-methylpyrrolidone) and so on. Modification Example 8.1 The second area 122B is an area coated with a primer after the corona discharge treatment. Variation 8.1 is a combination of Variation 8 and Variation 1. The preferred example of Modification 8.1 applies to Modification 1. Modification 8.2 The first area 122A is the area treated by corona discharge. Variation 8.2 is a combination of Variation 8 and Variation 2. The preferred example of Modification 8.2 applies to Modification 2. Modification Example 8.3 The first region 122A is a region coated with a primer after corona discharge treatment. Variation 8.3 is a combination of Variation 8 and Variation 3. The preferred example of Modification 8.3 applies to Modification 3. Modification 8.4 The first main surface of the base material layer 122 is the surface coated with the primer after the corona discharge treatment. Variation 8.4 is a combination of Variation 8 and Variation 4. The preferred example of Modification 8.4 applies to Modification 4. Modification 8.5 The first area 122A is an embossed area. Variation 8.5 is a combination of Variation 8 and Variation 5. Modification 8.6 The second area 122B is an embossed area. Variation 8.6 is a combination of Variation 8 and Variation 6. Modification 8.7 The first main surface of the substrate layer 122 is an embossed surface. Variation 8.7 is a combination of Variation 8 and Variation 7. Modification 9 As shown in FIG. 13, the adhesive layer 121 includes a first layer 1211 and a second layer 1212. The first layer 1211 has a disc shape. The two sides of the first layer 1211 are defined by the first main surface and the second main surface facing the first main surface. The first main surface of the first layer 1211 is in contact with the isolation film 11. The second main surface of the first layer 1211 is in contact with the second layer 1212. The second layer 1212 has a disc shape. The two sides of the second layer 1212 are defined by the first main surface and the second main surface facing the first main surface. The first main surface of the second layer 1212 is in contact with the first layer 1211. The second main surface of the second layer 1212 is in contact with the base layer 122. Modification 9.1 The second area 122B is an area coated with a primer after the corona discharge treatment. Variation 9.1 is a combination of Variation 9 and Variation 1. The preferred example of Modification 9.1 applies to Modification 1. Variation 9.2 The first area 122A is the area treated by corona discharge. Variation 9.2 is a combination of Variation 9 and Variation 2. The preferred example of Modification 9.2 applies to Modification 2. Modification 9.3 The first area 122A is an area coated with a primer after the corona discharge treatment. Variation 9.3 is a combination of Variation 9 and Variation 3. The preferred example of Modification 9.3 applies to Modification 3. Modification 9.4 The first main surface of the substrate layer 122 is the surface coated with the primer after the corona discharge treatment. Variation 9.4 is a combination of Variation 9 and Variation 4. The preferred example of Modification 9.4 applies to Modification 4. Variation 9.5 The first area 122A is an embossed area. Variation 9.5 is a combination of Variation 9 and Variation 5. Modification 9.6 The second area 122B is an embossed area. Variation 9.6 is a combination of Variation 9 and Variation 6. Modification 9.7 The first main surface of the substrate layer 122 is an embossed surface. Variation 9.7 is a combination of Variation 9 and Variation 7. Modification 10 As shown in FIG. 14, the adhesive layer 121 includes a first layer 1211 and a second layer 1212. The first layer 1211 has an annular plate shape. The first layer 1211 is located in the dicing ring fixing area 12B. The two sides of the first layer 1211 are defined by the first main surface and the second main surface facing the first main surface. The first main surface of the first layer 1211 is in contact with the isolation film 11. The second main surface of the first layer 1211 is in contact with the second layer 1212. The first layer 1211 may have adhesiveness. The second layer 1212 has a disc shape. The two sides of the second layer 1212 are defined by the first main surface and the second main surface facing the first main surface. The first main surface of the second layer 1212 is in contact with the first layer 1211 in the dicing ring fixing area 12B. The second main surface of the second layer 1212 is in contact with the base layer 122. Modified Example 10.1 The second region 122B is a region coated with a primer after the corona discharge treatment. Variation 10.1 is a combination of Variation 10 and Variation 1. The preferred example of Modification 10.1 is applicable to Modification 1. Modification 10.2 The first area 122A is an area treated by corona discharge. Variation 10.2 is a combination of Variation 10 and Variation 2. The preferred example of Modification 10.2 is applicable to Modification 2. Modified Example 10.3 The first region 122A is a region coated with a primer after the corona discharge treatment. Variation 10.3 is a combination of Variation 10 and Variation 3. The preferred example of Modification 10.3 is applicable to Modification 3. Modification 10.4 The first main surface of the base material layer 122 is the surface coated with the primer after the corona discharge treatment. Variation 10.4 is a combination of Variation 10 and Variation 4. The preferred example of modification 10.4 applies to modification 4. Modification 10.5 The first area 122A is an embossed area. Modification 10.5 is a combination of Modification 10 and Modification 5. Modification 10.6 The second area 122B is an embossed area. Variation 10.6 is a combination of Variation 10 and Variation 6. Modification 10.7 The first main surface of the base layer 122 is an embossed surface. Variation 10.7 is a combination of Variation 10 and Variation 7. Modification Example 11 In Modification Example 11, the dicing die-bonding tape 1 was used for the DBG method. Specifically, it includes the following steps: fixing the semiconductor wafer with grooves on the surface (outer surface) of the semiconductor wafer to the back grinding film to perform back grinding of the semiconductor wafer; removing the isolation from the dicing die bonding tape 1 The film 11 fixes the ground semiconductor wafer to the adhesive layer 121 of the dicing die bonding film 12; and applying tensile stress to the dicing die bonding film 12 to form a semiconductor wafer with the adhesive layer after breaking. These variations can be combined with other variations. [Examples] Hereinafter, the present invention will be described in detail with examples, but the present invention is not limited to the following examples as long as it does not exceed the gist. The production of the dicing adhesive film of Examples 1 to 4 and Comparative Examples 2 to 3 According to Table 1, the acrylic polymer, silica filler, solid epoxy resin, and solid phenol resin were dissolved or dispersed in methyl ethyl ketone , Coated on a PET separator, and volatilized methyl ethyl ketone at 130°C for 2 minutes to obtain an adhesive film with a thickness of 10 μm. A corona treatment machine (500 series manufactured by PILLAR TECHNOLOGIES) was used to corona discharge an EVA film with a thickness of 130 μm manufactured by Kurashiki Textile Co., Ltd. under the conditions shown in Table 1. The adhesive film was laminated on the corona-treated EVA film at 60° C., 10 mm/sec, and 0.15 MPa to obtain the diced wafers of Examples 1 to 4 and Comparative Examples 2 to 3. Each diced wafer has an EVA film and an adhesive film on the EVA film. The two sides of the EVA film are defined by the first main surface in contact with the adhesive film and the second main surface facing the first main surface. Then the two sides of the film are defined by the first main surface and the second main surface in contact with the EVA film. The mucous membrane of each sliced crystal is disc-shaped. In each die-cutting die attach film, the die-cutting ring fixing area is located at the periphery of the wafer fixing area. The amount of corona treatment The amount of corona treatment is represented by the following formula. Discharge processing capacity (W·min/m 2 )=Voltage of the discharge electrode (W) ÷ electrode width (m) ÷ speed (m/min) The production of the slicing wafer in Comparative Example 1 did not corona the EVA film Except for the discharge treatment, the same procedure as in Example 1 was used to produce a dicing die attach film. Then the 90 degree peel force of the film and the EVA film. Place the backing tape (BT-315 manufactured by Nitto Denko) on the adhesive film of the dicing adhesive film at a room temperature of 23°C, and cut out a length of 120 mm × a width of 50 mm The sliced crystal sticking film test piece. The chamber of AUTOGRAPH AGS-J (manufactured by Shimadzu Corporation) was adjusted to 23°C or -15°C, and the T peel test was performed at a peel angle of 90 degrees and a peel speed of 300 mm/min. The average value of the peel force is shown in Table 1. The surface free energy is at a room temperature of 23°C and 50±10%RH. The substrate tape (BT-315 manufactured by Nitto Denko) is attached to the adhesive film of the dicing adhesive film, and the adhesive film is peeled from the EVA film. Within 5 minutes after peeling, drop a series of test mixtures prepared in accordance with JIS K 6768: 1999 with a stepwise increase in surface tension onto the first main surface of the EVA film and the second main surface of the adhesive film, and use A squeegee with a width of 10 mm spreads to form a liquid film with a length of about 5 cm. After 2 seconds, observe the liquid film and select a test mixture that accurately maintains the shape of the liquid film for 2 seconds. Table 1 shows the surface tension of the selected test mixture. For breaking and picking up, the die cutting device (DFD6361) manufactured by DISCO is used to cut a 12-inch bare wafer with a width of 20-25 μm and a depth of 50 μm with 8 mm×12 mm. Attach a back grinding tape (UB-3083D manufactured by Nitto Denko) to the cut surface, and grind it with a back grinding device (DGP8760) manufactured by DISCO until the thickness of the bare wafer is 20 μm. A laminator is used to bond the ground wafer to the adhesive film of the dicing adhesive film at 60°C, 0.15 MPa, and 10 mm/sec. Fix the dicing ring to the adhesive film of the dicing sticky film with a laminator at 60°C, 0.15 MPa, and 10 mm/sec. Peel off the back grinding tape from the wafer after grinding, and use a Cool expander (DDS3200 manufactured by DISCO) to break the grinding at a cooling temperature of -15°C, a speed of 1 mm/sec, and an elongation of 11 mm. After the wafer has been cut, it is stretched using a heating table at a temperature of 80°C, a speed of 1 mm/sec, and a stretching amount of 7 mm, and heat shrinks at 200°C. The above method was used to form a wafer with an adhesive film after breaking. In order to confirm whether the adhesive film was broken along the breaking line after the breaking, 30 wafers with the adhesive film after the breaking were observed in each case. The breaking rate was calculated by the following formula, and the breaking rate was 80% or more as ○, less than 80% as ×, and the judgment results are shown in Table 1. Breaking rate = the number of wafers with the film after breaking along the breaking line/30. Pick-up performance Use the die bonder SPA300 made by Xinchuan company to pick up 10 chips with the film after breaking. The number of successes is 8 The above cases are marked as ○, and the cases less than 8 are marked as ×. [Table 1]
Figure 106133085-A0304-0001

1‧‧‧切晶黏晶帶4‧‧‧半導體晶圓4L‧‧‧分割預定線4P‧‧‧照射前半導體晶圓5A、5B、5C、5D、5E、5F‧‧‧半導體晶片6‧‧‧被接著體7‧‧‧焊接線8‧‧‧密封樹脂11‧‧‧隔離膜12‧‧‧切晶黏晶膜12a、12b、12c、12m‧‧‧切晶黏晶膜12A‧‧‧圓固定區域12B‧‧‧切晶環固定區域31‧‧‧切晶環32‧‧‧吸附台33‧‧‧頂起機構41‧‧‧改質區域100‧‧‧雷射光121‧‧‧接著劑層121A‧‧‧接著劑層第1部121B‧‧‧接著劑層第2部121C‧‧‧接著劑層第3部122‧‧‧基材層122A‧‧‧第1區域122B‧‧‧第2區域1211‧‧‧第1層1212‧‧‧第2層1‧‧‧Sliced wafer bonding tape4‧‧‧Semiconductor wafer 4L‧‧‧Segmentation line 4P‧‧‧Semiconductor wafer 5A, 5B, 5C, 5D, 5E, 5F before irradiation ‧‧‧Semiconductor wafer 6‧ ‧‧Subsequent body 7‧‧‧Welding line 8‧‧‧Sealing resin 11‧‧‧Isolation film 12‧‧‧Cut and sticky film 12a, 12b, 12c, 12m‧‧‧Cut and sticky film 12A‧‧ ‧Circular fixing area 12B‧‧‧Crystal cutting ring fixing area 31‧‧‧Crystal cutting ring 32‧‧‧Adsorption table 33‧‧‧Lifting mechanism 41‧‧‧Modification area 100‧‧‧Laser light 121‧‧‧ Adhesive layer 121A‧‧‧Adhesive layer first part 121B‧‧‧Adhesive layer second part 121C‧‧‧Adhesive layer third part 122‧‧‧Base material layer 122A‧‧‧First area 122B‧‧ ‧Second area 1211‧‧‧1st floor 1212‧‧‧2nd floor

圖1係實施形態1之切晶黏晶帶之概略俯視圖。 圖2係實施形態1之切晶黏晶帶之一部分之概略剖視圖。 圖3係實施形態1之半導體裝置製造步驟之概略立體圖。 圖4係實施形態1之半導體裝置製造步驟之概略剖視圖。 圖5係實施形態1之半導體裝置製造步驟之概略剖視圖。 圖6係實施形態1之半導體裝置製造步驟之概略剖視圖。 圖7係實施形態1之半導體裝置製造步驟之概略剖視圖。 圖8係實施形態1之半導體裝置製造步驟之概略剖視圖。 圖9係實施形態1之半導體裝置製造步驟之概略剖視圖。 圖10係實施形態1之半導體裝置製造步驟之概略剖視圖。 圖11係實施形態1之半導體裝置製造步驟之概略剖視圖。 圖12係變化例8之切晶黏晶帶之一部分之概略剖視圖。 圖13係變化例9之切晶黏晶帶之一部分之概略剖視圖。 圖14係變化例10之切晶黏晶帶之一部分之概略剖視圖。FIG. 1 is a schematic plan view of the die-cutting die-bonding tape of the first embodiment. 2 is a schematic cross-sectional view of a part of the die-cutting die-bonding tape of the first embodiment. 3 is a schematic perspective view of the manufacturing steps of the semiconductor device of the first embodiment. 4 is a schematic cross-sectional view of the manufacturing steps of the semiconductor device of the first embodiment. 5 is a schematic cross-sectional view of the manufacturing steps of the semiconductor device of the first embodiment. 6 is a schematic cross-sectional view of the manufacturing steps of the semiconductor device of the first embodiment. FIG. 7 is a schematic cross-sectional view of the manufacturing steps of the semiconductor device of the first embodiment. 8 is a schematic cross-sectional view of the manufacturing steps of the semiconductor device of the first embodiment. 9 is a schematic cross-sectional view of the manufacturing steps of the semiconductor device of the first embodiment. 10 is a schematic cross-sectional view of the manufacturing steps of the semiconductor device of the first embodiment. 11 is a schematic cross-sectional view of the manufacturing steps of the semiconductor device of the first embodiment. FIG. 12 is a schematic cross-sectional view of a part of the die-cutting die-bonding tape of Modification 8. 13 is a schematic cross-sectional view of a part of the die-cutting die-bonding tape of Modification 9. 14 is a schematic cross-sectional view of a part of the die-cutting die-bonding tape of modification 10.

1‧‧‧切晶黏晶帶 1‧‧‧Cut crystal sticky tape

11‧‧‧隔離膜 11‧‧‧Isolation film

12a、12b、12c、12m‧‧‧切晶黏晶膜 12a, 12b, 12c, 12m‧‧‧Cut wafer

Claims (4)

一種切晶黏晶帶，其包括：隔離膜、及包含接著劑層與基材層之膜，上述接著劑層位於上述隔離膜及上述基材層之間，於上述膜之晶圓固定區域中，上述接著劑層及上述基材層於23℃下之90度剝離力為0.02N/20mm~0.5N/20mm，於上述晶圓固定區域中，上述接著劑層及上述基材層於-15℃下之90度剝離力為0.1N/20mm以上，上述基材層之兩面係由與上述接著劑層接觸之第1主面及第2主面定義，於上述晶圓固定區域中，上述基材層之上述第1主面之表面自由能為32~39mN/m，上述接著劑層之兩面係由與上述隔離膜接觸之第1主面及與上述基材層接觸之第2主面定義，且於上述晶圓固定區域中，上述接著劑層之上述第2主面之表面自由能為34~50mN/m。 A dicing die bonding tape, comprising: an isolation film, and a film including an adhesive layer and a substrate layer, the adhesive layer being located between the isolation film and the substrate layer in the wafer fixing region of the film , The 90 degree peel force of the adhesive layer and the substrate layer at 23°C is 0.02N/20mm~0.5N/20mm. In the wafer fixing area, the adhesive layer and the substrate layer are at -15 The 90-degree peeling force at ℃ is 0.1N/20mm or more. The two sides of the substrate layer are defined by the first and second main surfaces that are in contact with the adhesive layer. In the wafer fixing area, the substrate The surface free energy of the first main surface of the material layer is 32~39mN/m, and the two surfaces of the adhesive layer are defined by the first main surface in contact with the isolation film and the second main surface in contact with the substrate layer And in the wafer fixing area, the surface free energy of the second main surface of the adhesive layer is 34-50 mN/m. 如請求項1之切晶黏晶帶，其中將上述晶圓固定區域中上述接著劑層之上述第2主面之表面自由能設為E2、將上述晶圓固定區域中上述基材層之上述第1主面之表面自由能設為E1時， E2與E1之差為15mN/m以下。 Such as the dicing die bonding tape of claim 1, wherein the surface free energy of the second main surface of the adhesive layer in the wafer fixing area is set to E 2 , and the surface free energy of the substrate layer in the wafer fixing area is set to When the surface free energy of the first principal surface is E 1 , the difference between E 2 and E 1 is 15 mN/m or less. 如請求項1或2之切晶黏晶帶，其中上述接著劑層於23℃下之儲存彈性模數為10GPa以下。 Such as the diced die-bonding tape of claim 1 or 2, wherein the storage elastic modulus of the adhesive layer at 23° C. is 10 GPa or less. 一種半導體裝置之製造方法，其包括如下步驟：從如請求項1至3中任一項之切晶黏晶帶去除上述隔離膜，將半導體晶圓固定於上述膜之上述接著劑層；及對上述膜施加拉伸應力，形成附分斷後接著劑層之半導體晶片。 A method of manufacturing a semiconductor device, comprising the steps of: removing the isolation film from the dicing die bonding tape of any one of claims 1 to 3, and fixing the semiconductor wafer to the adhesive layer of the film; and Tensile stress is applied to the film to form a semiconductor wafer with an adhesive layer after breaking.
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