KR102401808B1 - Dicing die bonding tape and manufacturing method of semiconductor device - Google Patents

Abstract

An object of the present disclosure is to provide a dicing die bonding tape capable of dividing an adhesive layer with high precision.
The present disclosure relates to a dicing die bonding tape including a separator, and a film including an adhesive layer and a substrate layer. The adhesive layer is located between the separator and the substrate layer. Both surfaces of the base material layer are defined by a first main surface and a second main surface in contact with the adhesive layer. In the wafer fixing region of the film, the 90 degree peeling force at 23° C. in the adhesive layer and the substrate layer is 0.02 N/20 mm to 0.5 N/20 mm. In the wafer fixing region, the 90 degree peeling force at -15°C in the adhesive layer and the substrate layer is 0.1 N/20 mm or more. The surface free energy of the 1st main surface in the base material layer with respect to a wafer fixing area|region is 32-39 mN/m.

Description

DICING DIE BONDING TAPE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

The present disclosure relates to a dicing die bonding tape and a method of manufacturing a semiconductor device.

A method of breaking a semiconductor wafer by irradiating a laser beam to a line to be divided into a semiconductor wafer to obtain individual semiconductor chips (hereinafter referred to as "stealth dicing (registered trademark)" in some cases), or the surface of a semiconductor wafer There is a method (hereinafter, referred to as a "Dicing Before Grinding (DBG) method") for forming individual semiconductor chips by forming a groove on the (outer surface) and then grinding the back surface of the semiconductor wafer.

In stealth dicing or the DBG method, a dicing die bonding tape may be used in the process. A dicing die bonding tape has a base material layer, an adhesive bond layer, and a separator, and there exists a thing of the structure in which an adhesive bond layer is located between a base material layer and a separator. There is also a dicing die bonding tape having a base layer, an adhesive layer, an adhesive layer, and a separator. The former dicing die bonding tape can be manufactured at low cost compared with the latter dicing die bonding tape.

In stealth dicing or DBG method, the adhesive bond layer may be parted under low temperature.

Japanese Patent Laid-Open No. 2004-250572 Japanese Patent No. 5305501

An object of the present disclosure is to provide a dicing die bonding tape capable of dividing an adhesive layer with high precision. An object of this indication is to provide the manufacturing method of the semiconductor device which can divide|segment an adhesive bond layer with high precision.

The present disclosure relates to a dicing die bonding tape including a separator, and a film including an adhesive layer and a substrate layer. The adhesive layer is located between the separator and the substrate layer. Both surfaces of the base material layer are defined by a first main surface and a second main surface in contact with the adhesive layer. In the wafer fixing region of the film, the 90 degree peeling force at 23° C. in the adhesive layer and the substrate layer is 0.02 N/20 mm to 0.5 N/20 mm. In the wafer fixing region, the 90 degree peeling force at -15°C in the adhesive layer and the substrate layer is 0.1 N/20 mm or more. The surface free energy of the 1st main surface in the base material layer with respect to a wafer fixing area|region is 32-39 mN/m.

Since the 90 degree peeling force at 23 degreeC in an adhesive bond layer and a base material layer is 0.02 N/20mm or more, in the process from fixing a semiconductor wafer to picking up a semiconductor chip, a semiconductor wafer and a semiconductor chip are hard to peel from an adhesive bond layer. Since the 90 degree peeling force of -15 degreeC in an adhesive bond layer and a base material layer is 0.1 N/20mm or more, an adhesive bond layer can be parted with high precision. It is thought that this is because a force is effectively transmitted to an adhesive bond layer. Since the 90 degree peeling force at 23 degreeC is 0.5 N/20mm or less, after a semiconductor wafer is divided, the semiconductor chip with an adhesive bond layer can be peeled without difficulty. Since the surface free energy E1 of the _1st main surface in a base material layer is 32 mN/m or more, a base material layer shows favorable wettability to an adhesive bond layer.

The present disclosure includes a step of removing a separator from a dicing die bonding tape, fixing a semiconductor wafer to an adhesive layer of a film, and applying a tensile stress to the film to form a semiconductor chip with an adhesive layer after division It relates to a method of manufacturing a semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic plan view of the dicing die bonding tape in Embodiment 1. FIG.
It is a schematic sectional drawing of a part of the dicing die bonding tape in Embodiment 1. FIG.
3 is a schematic perspective view of a semiconductor device manufacturing process according to the first embodiment.
4 is a schematic cross-sectional view of a semiconductor device manufacturing process according to the first embodiment.
5 is a schematic cross-sectional view of a semiconductor device manufacturing process according to the first embodiment.
6 is a schematic cross-sectional view of a semiconductor device manufacturing process according to the first embodiment.
7 is a schematic cross-sectional view of a semiconductor device manufacturing process according to the first embodiment.
8 is a schematic cross-sectional view of a semiconductor device manufacturing process according to the first embodiment.
9 is a schematic cross-sectional view of a semiconductor device manufacturing process according to the first embodiment.
10 is a schematic cross-sectional view of a semiconductor device manufacturing process according to the first embodiment.
11 is a schematic cross-sectional view of a semiconductor device manufacturing process according to the first embodiment.
Fig. 12 is a schematic cross-sectional view of a part of a dicing die bonding tape according to a modification example 8;
Fig. 13 is a schematic cross-sectional view of a part of a dicing die bonding tape according to a ninth modification.
14 is a schematic cross-sectional view of a part of a dicing die bonding tape according to a tenth modification.

Although embodiment is described below and this indication is demonstrated in detail, this indication is not limited only to these embodiment.

Embodiment 1

As shown in Fig. 1, the dicing die bonding tape 1 comprises a separator 11 and dicing die bonding films 12a, 12b, 12c, ..., 12m (hereinafter referred to as "dicing die bonding film ( 12)”). The dicing die bonding tape 1 may have a roll shape. The separator 11 forms a tape shape. The separator 11 is, for example, a peeling-treated polyethylene terephthalate (PET) film. The dicing die bonding film 12 is positioned on the separator 11 . The distance between the dicing die bonding film 12a and the dicing die bonding film 12b, the distance between the dicing die bonding film 12b and the dicing die bonding film 12c, ... … The distance between the dicing die bonding film 12l and the dicing die bonding film 12m is constant. The dicing die bonding film 12 forms a disk shape.

As shown in Fig. 2, the dicing die bonding film 12 includes a wafer holding region 12A and a dicing ring holding region 12B. The wafer holding area 12A may have a disk shape, for example. The dicing ring holding region 12B is located on the periphery of the wafer holding region 12A. The dicing ring fixing region 12B may have a donut plate shape, for example.

The dicing die bonding film 12 includes an adhesive layer 121 . The adhesive layer 121 forms a disk shape. The thickness of the adhesive layer 121 is, for example, 2 µm or more, preferably 5 µm or more. The thickness of the adhesive layer 121 is, for example, 200 µm or less, preferably 150 µm or less, more preferably 100 µm or less, still more preferably 50 µm or less. Both surfaces of the adhesive layer 121 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the adhesive layer 121 is in contact with the separator 11 . The adhesive layer 121 includes an adhesive layer first portion 121A that is at least dependent on the wafer holding region 12A. The adhesive layer 121 includes an adhesive layer second portion 121B that is at least dependent on the dicing ring fixing region 12B. The adhesive layer 121 includes a third adhesive layer 121C positioned between the first adhesive layer 121A and the second adhesive layer 121B. The third portion 121C of the adhesive layer connects the first portion 121A of the adhesive layer and the second portion 121B of the adhesive layer. The adhesive layer third portion 121C may have a donut plate shape, for example.

The dicing die bonding film 12 includes a base layer 122 . The base layer 122 forms a disk shape. The thickness of the base material layer 122 is 50 micrometers or more, for example, Preferably it is 80 micrometers or more. The thickness of the base material layer 122 is, for example, 200 µm or less, preferably 170 µm or less. Both surfaces of the substrate layer 122 are defined as a first main surface in contact with the adhesive layer 121 and a second main surface opposite to the first main surface. The first main surface of the base layer 122 includes the first region 122A in the wafer fixing region 12A. The first area 122A is an area that has not been pretreated. Pretreatment is corona discharge treatment, plasma treatment, application of a primer, peeling treatment, embossing, ultraviolet treatment, heat treatment, and the like. As for the release agent for a peeling process, a silicone type releasing agent and a fluorine type releasing agent are mentioned, for example. The 1st main surface of the base material layer 122 includes the 2nd area|region 122B in the dicing ring fixing area|region 12B. The second area 122B is a corona discharge-treated area.

The surface free energy E ₁ of the first main surface in the base material layer 122 in the wafer fixing region 12A is 32 mN/m or more. Since it is 32 mN/m or more, the base material layer 122 shows favorable wettability to the adhesive bond layer 121. The upper limit of E ₁ is, for example, 39 mN/m, preferably 36 mN/m. If it is 39 mN/m or less, since the adhesion of the base layer 122 to the adhesive layer 121 is not too high, after the semiconductor wafer is divided, the semiconductor chip provided with the adhesive layer can be peeled without difficulty.

The surface free energy E ₂ of the second main surface of the adhesive layer 121 in the wafer fixing region 12A is preferably 33 mN/m or more, preferably 34 mN/m or more. The upper limit of E ₂ is, for example, 50 mN/m, preferably 45 mN/m.

The surface free energy of the first main surface of the adhesive layer 121 in the wafer fixing region 12A is preferably 33 mN/m or more, preferably 34 mN/m or more. If it is 33 mN/m or more, the adhesive bond layer 121 can be peeled from the separator 11 without difficulty. The upper limit of the surface free energy of the first main surface in the adhesive layer 121 is, for example, 50 mN/m, preferably 45 mN/m. If it is 50 mN/m or less, the liquid for producing the adhesive layer 121 can be applied to the separator 11 without difficulty.

The difference between E ₂ and E ₁ is preferably 15 mN/m or less, more preferably 13 mN/m or less. The difference between E ₂ and E ₁ is preferably 1 mN/m or more. When it is less than 1 mN/m, or when it exceeds 15 mN/m, there exists a tendency for the 90 degree peeling force at 23 degreeC in the adhesive bond layer 121 and the base material layer 122 to become high too much.

In the wafer fixing area|region 12A of the dicing die bonding film 12, the 90 degree peeling force at 23 degreeC in the adhesive bond layer 121 and the base material layer 122 is 0.02 N/20mm or more. Since it is 0.02 N/20 mm or more, it is difficult for a semiconductor wafer/semiconductor chip to peel from the adhesive bond layer 121 in the process from fixing of a semiconductor wafer to pick-up of a semiconductor chip. If the 90 degree peeling force at 23 ° C is 0.1 N/20 mm or more, when the separator 11 is removed from the dicing die bonding film 12, the adhesive layer 121 can be prevented from following the separator 11 . The upper limit of the 90 degree peeling force at 23 degreeC is 0.5N/20mm, Preferably it is 0.3N/20mm. Since it is 0.5 N/20 mm or less, after a semiconductor wafer is divided, the semiconductor chip with an adhesive bond layer can be peeled without difficulty.

In the wafer fixing region 12A of the dicing die bonding film 12, the 90 degree peeling force at -15°C in the adhesive layer 121 and the base layer 122 is 0.1N/20mm or more, preferably is greater than 0.3N/20mm. Since it is 0.1N/20mm or more, an adhesive bond layer can be divided with high precision. It is thought that this is because a force is effectively transmitted to an adhesive bond layer. The upper limit of the 90 degree peeling force of -15 degreeC is 10N/20mm, for example.

The base layer 122 is, for example, a polyetheretherketone film, a polyetherimide film, a polyarylate film, a polyethylenenaphthalate film, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, Polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polybutylene terephthalate film, polyurethane film, ethylene-vinyl acetate copolymer film (EVA film), ionomer resin film, ethylene-(meth)acrylic acid It is possible to select from plastic films, such as a copolymer film, an ethylene- (meth)acrylic acid ester copolymer film, a polystyrene film, and a polycarbonate film, etc. Since the base layer 122 preferably has a certain degree of elasticity, it is preferably a polyethylene film, a polypropylene film, an ethylene-vinyl acetate copolymer film, or an ionomer resin film.

The storage elastic modulus of 23 degreeC in the adhesive bond layer 121 becomes like this. Preferably it is 10 GPa or less, More preferably, it is 5 GPa or less. If it is 10 GPa or less, adhesiveness with the base material layer 122 is high, and it can suppress that peeling occurs between the adhesive bond layer 121 and the base material layer 122 after division. The lower limit of the storage modulus at 23°C is, for example, 1 MPa.

The adhesive layer 121 includes a resin component. As a resin component, a thermoplastic resin, a thermosetting resin, etc. are mentioned. As a thermoplastic resin, an acrylic resin is mentioned, for example.

The acrylic resin is not particularly limited, and a polymer containing as a component one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly having 4 to 18 carbon atoms (acrylic copolymer) ) and the like. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, an amyl group, an isoamyl group, a hexyl group, a heptyl group, a cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, or dodecyl group and the like.

In addition, it does not specifically limit as another monomer which forms a polymer (acrylic copolymer), For example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, or crotonic acid carboxyl group-containing monomers such as, etc., acid anhydride monomers such as maleic anhydride or itaconic anhydride, (meth)acrylic acid 2-hydroxyethyl, (meth)acrylic acid 2-hydroxypropyl, (meth)acrylic acid 4-hydroxybutyl, ( Meth)acrylic acid 6-hydroxyhexyl, (meth)acrylic acid 8-hydroxyoctyl, (meth)acrylic acid 10-hydroxydecyl, (meth)acrylic acid 12-hydroxylauryl or (4-hydroxymethylcyclohexyl)- hydroxyl group-containing monomers such as methyl acrylate, styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acrylamide ) a sulfonic acid group-containing monomer such as acryloyloxynaphthalenesulfonic acid, or a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate.

It is preferable that a weight average molecular weight is 100,000 or more also in an acrylic resin, It is more preferable that it is 300,000-3 million, It is still more preferable that it is 500,000-2 million. It is because it is excellent in adhesiveness and heat resistance as it is in this numerical range. In addition, a weight average molecular weight is the value computed by polystyrene conversion by measuring by GPC (gel permeation chromatography).

It is preferable that an acrylic resin contains a functional group. The functional group is, for example, a hydroxyl group, a carboxy group, or a nitrile group. A hydroxyl group and a carboxy group are preferable.

Content of the thermoplastic resin in 100 weight% of resin components becomes like this. Preferably it is 10 weight% or more, More preferably, it is 20 weight% or more. Flexibility is favorable in it being 10 weight% or more. Content of the thermoplastic resin in 100 weight% of resin components becomes like this. Preferably it is 80 weight% or less, More preferably, it is 70 weight% or less.

As a thermosetting resin, an epoxy resin, a phenol resin, etc. are mentioned.

It does not specifically limit as an epoxy resin, For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol Bifunctional epoxy resins and polyfunctional epoxy resins such as novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, or hydantoin type, trisglycidyl isocyanurate type or glycidyl Epoxy resins, such as a cidylamine type, are used. Among these epoxy resins, a novolak-type epoxy resin, a biphenyl-type epoxy resin, a trishydroxyphenylmethane-type resin, or a tetraphenylolethane-type epoxy resin is particularly preferable. It is because these epoxy resins are rich in reactivity with the phenol resin as a hardening|curing agent, and are excellent in heat resistance etc.

The epoxy equivalent of the epoxy resin is preferably 100 g/eq. above, more preferably 120 g/eq. More than that. The epoxy equivalent of the epoxy resin is preferably 1000 g/eq. Hereinafter, more preferably 500 g/eq. is below.

In addition, the epoxy equivalent of an epoxy resin can be measured by the method prescribed|regulated to JISK7236-2009.

A phenol resin acts as a hardening|curing agent of an epoxy resin, For example, novolak-type phenols, such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, tert- butylphenol novolak resin, a nonylphenol novolak resin. Polyoxystyrene, such as resin, a resol type phenol resin, and polyparaoxystyrene, etc. are mentioned. Among these phenol resins, a phenol novolak resin and a phenol aralkyl resin are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.

The hydroxyl equivalent of the phenol resin is preferably 150 g/eq. or more, more preferably 200 g/eq. More than that. The hydroxyl equivalent of a phenol resin becomes like this. Preferably it is 500 g/eq. Hereinafter, more preferably 300 g/eq. is below.

It is suitable to mix|blend so that the compounding ratio of an epoxy resin and a phenol resin may become 0.5-2.0 equivalent of hydroxyl groups in a phenol resin per 1 equivalent of epoxy groups in an epoxy resin component, for example. More suitable is 0.8 to 1.2 equivalents. That is, when the mixing ratio of both is out of this range, it is because sufficient hardening reaction does not advance and the characteristic of hardened|cured material deteriorates easily.

Total content of the epoxy resin and phenol resin in 100 weight% of resin components becomes like this. Preferably it is 20 weight% or more, More preferably, it is 30 weight% or more. Total content of an epoxy resin and a phenol resin becomes like this. Preferably it is 90 weight% or less, More preferably, it is 80 weight% or less.

The adhesive layer 121 may include an inorganic filler. Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, solder. , carbon, and the like. Especially, silica, alumina, silver, etc. are preferable and a silica is more preferable. The average particle diameter of the inorganic filler is preferably 0.001 µm to 1 µm. The average particle diameter of a filler can be measured by the following method. The adhesive layer 121 was put in a crucible, and incinerated by heating at 700° C. for 2 hours in an atmospheric atmosphere, the obtained ash was dispersed in pure water and sonicated for 10 minutes, followed by a laser diffraction scattering type particle size distribution measuring device (manufactured by Beckman Coulter) , 「LS 13 320」; wet method) to find the average particle size.

Content of the inorganic filler in the adhesive bond layer 121 becomes like this. Preferably it is 0 weight% or more, More preferably, it is 1 weight% or more, More preferably, it is 3 weight% or more, More preferably, it is 20 weight% or more. Content of the inorganic filler in the adhesive bond layer 121 becomes like this. Preferably it is 85 weight% or less, More preferably, it is 20 weight% or less, More preferably, it is 15 weight% or less.

The adhesive layer 121 may contain suitably the compounding agent generally used for film manufacture, for example, a silane coupling agent, a hardening accelerator, a crosslinking agent, etc. besides the said component.

The manufacturing method of the dicing die bonding film 12 is, for example, the process of corona-discharge-treating the 2nd area|region 122B of the base material layer 122, and forming the adhesive bond layer 121 on the base material layer 122. including the process of Corona treatment is a surface treatment technique which reforms the surface of base materials, such as a plastic film, paper, and metal foil, by corona discharge irradiation. When a dielectric material is inserted between metal electrodes and a high frequency and high voltage is applied, a filament-shaped plasma called a streamer corona is randomly and temporally formed between the electrodes. The high-energy electrons reach the surface layer of the polymer film passing through the counter electrode side, and separate the main chain and side chain of the polymer bond. The cut polymer surface layer is in a radical state, and by recombination of oxygen radicals and ozone layers in the gas phase with the main chain and side chains, polar functional groups such as hydroxyl groups and carbonyl groups are introduced. Since hydrophilicity is imparted to the surface of the substrate, the adhesion (wettability) to the hydrophobic polymer is improved, and the adhesive force is increased. When the introduced functional group and the adhesive layer 121 are chemically bonded, the adhesive force is further increased. The surface energy of the base material layer 122 after corona discharge treatment is 30 dyne/cm or more, for example, Preferably it is 35 dyne/cm or more.

As the main methods for partially performing corona treatment, two methods are mentioned. The first is a method of protecting a portion of the base layer 122 with a mask (shielding material) so as not to be corona treated. By disposing a mask between the base layer 122 and the discharge electrode, a part of the base layer 122 is shielded with the mask. The mask comprises, for example, a non-conductive material. A roll-shaped object having a plurality of masks, an elongated non-adhesive film having a plurality of masks, and a weakly adhesive tape having a plurality of masks can be used repeatedly. The second method is to pass the base material layer 122 between the discharge electrode and the dielectric roll having the unevenness. In this method, only the convex portion can be modified. The dielectric roll includes, for example, a metal core and a dielectric layer wound around the metal core. The dielectric layer has irregularities. The distance between the recess and the electrode is preferably 2 mm or more. The dielectric layer may have, for example, insulation and conductivity and resistance to corona discharge. The dielectric layer includes, for example, chlorine-based rubber, PET rubber, silicone rubber, ceramic, and the like. The second method is simpler than the first method. However, in the second method, the boundary between the corona-treated portion and the untreated portion tends to become more blurred than in the first method.

The dicing die bonding tape 1 can be used in order to manufacture a semiconductor device.

As shown in Fig. 3, the light-converging point is set inside the semiconductor wafer 4P before irradiation, and the laser beam 100 is irradiated along the grid-like division line 4L, and the semiconductor wafer 4P before irradiation. A modified region 41 is formed to obtain a semiconductor wafer 4 . As the semiconductor wafer 4P before irradiation, a silicon wafer, a silicon carbide wafer, a compound semiconductor wafer, etc. are mentioned. As a compound semiconductor wafer, a gallium nitride wafer etc. are mentioned.

The irradiation conditions of the laser beam 100 can be suitably adjusted within the range of the following conditions, for example.

(A) laser light (100)

Laser Light Source Semiconductor Laser Excitation Nd:YAG Laser

Wavelength 1064nm

Laser beam spot cross-sectional area 3.14×10 ^{- 8} cm2

Oscillation type Q switch pulse

Repetition frequency 100 kHz or less

Pulse width 1 μs or less

Output 1mJ or less

Laser light quality TEM00

Polarization Characteristics Linear Polarization

(B) Condensing lens

Less than 100 times magnification

NA 0.55

100% or less transmittance to laser light wavelength

(C) Before irradiation, the moving speed of the loading table on which the semiconductor wafer is loaded is 280 mm/sec or less

As shown in FIG. 4 , the semiconductor wafer 4 includes a modified region 41 . The modified region 41 is brittle compared to other regions. The semiconductor wafer 4 further includes semiconductor chips 5A, 5B, 5C, ..., 5F.

5, the separator 11 is removed from the dicing die bonding tape 1, and the semiconductor wafer 4 heated by the dicing ring 31 and the heating table is rolled into a dicing die bonding film ( 12) is fixed. The semiconductor wafer 4 is fixed to the wafer holding area 12A. The semiconductor wafer 4 is fixed, for example, at 40°C or higher, preferably 45°C or higher, more preferably 50°C or higher, still more preferably 55°C or higher. The semiconductor wafer 4 is fixed, for example, at 100°C or lower, preferably at 90°C or lower. The fixing pressure of the semiconductor wafer 4 is, for example, 1×10 ⁵ Pa to 1×10 ⁷ Pa. The roll speed is, for example, 10 mm/sec. The dicing ring 31 is fixed to the dicing ring fixing region 12B.

As shown in FIG. 6, the dicing die bonding film 12 is pushed up by the pushing means 33 located below the dicing die bonding film 12, and the dicing die bonding film 12 is expanded. do. The temperature of the expansion is preferably 10°C or lower, more preferably 0°C or lower. The lower limit of the temperature is, for example, -20°C.

With the expansion of the dicing die bonding film 12 , the semiconductor wafer 4 is divided with the modified region 41 as a starting point, and the adhesive layer 121 is also divided. As a result, after division, the semiconductor chip 5A provided with the adhesive layer 121A is formed on the base layer 122 .

As shown in Fig. 7, the pushing means 33 is lowered. As a result, sagging occurs in the dicing die bonding film 12 . Sagging occurs at the periphery of the wafer holding area 12A.

8, the dicing die bonding film 12 is pushed up and expanded by the suction table 32 located below the dicing die bonding film 12, and the suction table 32 is maintained while the expansion is maintained. The dicing die bonding film 12 is fixed by suction.

As shown in FIG. 9 , the suction table 32 is lowered while the dicing die bonding film 12 is suctioned and fixed to the suction table 32 .

With the dicing die bonding film 12 being sucked and fixed to the suction table 32, hot air is blown to the slack of the dicing die bonding film 12, and the slack is removed. The temperature of hot air becomes like this. Preferably it is 170 degreeC or more, More preferably, it is 180 degreeC or more. The upper limit of the hot air temperature is, for example, 240°C, preferably 220°C.

After the division, the semiconductor chip 5A provided with the adhesive layer 121A is peeled off from the base layer 122 .

As shown in FIG. 10 , the semiconductor chip 5A provided with the adhesive layer 121A is pressed against the adherend 6 after division. Crimping is performed, for example, at 80°C or higher, preferably at 90°C or higher. For example, it is 150 degrees C or less, Preferably it carries out at 130 degrees C or less. The adherend 6 is, for example, a lead frame, an interposer, a TAB film, a semiconductor chip, or the like. The adherend 6 has a terminal portion.

By heating the adherend 6 provided with the semiconductor chip 5A in a pressurized atmosphere, the adhesive layer 121 is cured after being divided. The pressurized atmosphere is, for example, 0.5 kg/cm 2 (4.9×10 ^-2 MPa) or more, preferably 1 kg/cm 2 (9.8×10 ^-2 MPa) or more, more preferably 5 kg/cm 2 (4.9×10 ^-1 ) or more. MPa) or more. For example, it is 120 degreeC or more, Preferably it is 150 degreeC or more, More preferably, it heats at 170 degreeC or more. The upper limit is, for example, 260°C, 200°C, 180°C or the like.

As shown in FIG. 11 , the electrode pad of the semiconductor chip 5A and the terminal portion of the adherend 6 are electrically connected with a bonding wire 7 , and the semiconductor chip 5A is sealed with a sealing resin 8 . .

The semiconductor device obtained by the above method contains the semiconductor chip 5A, the to-be-adhered body 6, and the adhesive bond layer 121 after dicing. After dicing, the adhesive layer 121 bonds the semiconductor chip 5A and the adherend 6 to each other. The semiconductor device further includes a sealing resin 8 that covers the semiconductor chip 5A.

As mentioned above, in the manufacturing method of a semiconductor device, the separator 11 is removed from the dicing die bonding tape 1, and the semiconductor wafer 4 is fixed to the adhesive bond layer 121 of the dicing die bonding film 12. and applying a tensile stress to the dicing die bonding film 12, and forming the semiconductor chip 5A provided with the adhesive layer 121A after division.

variation One

The second region 122B is a region where a primer is applied after corona discharge treatment.

It is preferable that the primer and the base layer 122 are chemically bonded. It is suitable that the primer can be chemically bonded to the base layer 122 and can exhibit strong adhesion to the adhesive layer second portion 121B. Primers include, for example, crosslinking agents and polymers. The crosslinking agent of the primer is, for example, an isocyanate type crosslinking agent, an epoxy type crosslinking agent, or the like. From a viewpoint of being able to react in a short time at low temperature, an isocyanate type crosslinking agent and an epoxy type crosslinking agent are preferable. The polymer of the primer may have a functional group capable of reacting with the crosslinking agent. The functional group is, for example, a hydroxyl group. The thickness of the primer is, for example, 1 μm.

variation 2

The first area 122A is a corona discharge-treated area.

The manufacturing method of the dicing die bonding film 12 includes, for example, the process of corona-discharge-treating the base material layer 122, and the process of forming the adhesive bond layer 121 on the base material layer 122. In the process of corona-discharge-treating the base material layer 122, the intensity|strength of the corona discharge treatment in 1st area|region 122A can be made lower than the intensity|strength of the corona discharge treatment in 2nd area|region 122B. The intensity of the corona discharge treatment in the first region 122A may be the same as the intensity of the corona discharge treatment in the second region 122B. In this case, the adhesive layer first portion 121A preferably includes a release agent. As a mold release agent, a fluorine type, silicone type, oil type mold release agent, etc. are mentioned. On the other hand, it is preferable that the adhesive layer second part 121B does not contain such a mold release agent.

variation 3

The first area 122A is an area where the primer is applied after corona discharge treatment.

It is preferable that both the polarity of the primer and the polarity of the adhesive layer first portion 121A are largely different. The surface energy of the primer is, for example, 5 dyne/cm or more and less than 30 dyne/cm. The surface energy of the adhesive layer first portion 121A is, for example, greater than 30 dyne/cm and less than or equal to 50 dyne/cm. When the elastic modulus of the primer is low, the peeling force between the adhesive layer first portion 121A and the base layer 122 may become too high. to be. As a suitable example of a primer, the modification 1 applies mutatis mutandis.

The intensity of the corona discharge treatment in the first region 122A may be the same as the intensity of the corona discharge treatment in the second region 122B. Both may be different.

variation 4

The first main surface of the base layer 122 is a surface coated with a primer after corona discharge treatment.

The intensity of the corona discharge treatment in the first region 122A may be the same as the intensity of the corona discharge treatment in the second region 122B. Both may be different. Suitable examples of the primer apply mutatis mutandis 1 to modification.

variation 5

The first area 122A is an embossed area.

variation 6

The second region 122B is an embossed region.

variation 7

The first main surface of the base layer 122 is an embossed surface.

variation 8

12 , the adhesive layer 121 includes the first adhesive layer 121A and the second adhesive layer 121B, but does not include the third adhesive layer 121C. The adhesive layer first portion 121A has, for example, a disk shape. The adhesive layer 2nd part 121B forms the shape of a donut plate, for example. The second adhesive layer portion 121B is not in contact with the first adhesive layer portion 121A.

The composition and physical properties of the second adhesive layer 121B may be different from those of the first adhesive layer 121A. Example 1 applies mutatis mutandis to suitable examples of the composition and physical properties of the adhesive layer first portion 121A. It is preferable that the adhesive bond layer 2nd part 121B has adhesiveness. For the adhesive constituting the adhesive layer second part 121B, for example, a known adhesive such as acrylic, rubber, vinyl alkyl ether, silicone, polyester, polyamide, urethane, or styrene-diene block copolymer is used. It can be used 1 type or in combination of 2 or more types.

The adhesive layer second portion 121B preferably contains a crosslinking agent capable of reacting with a functional group such as a hydroxyl group or a carboxylic acid group in the corona discharge-treated second region 122B, and a resin component.

It is preferable that the resin component contains the thermoplastic resin which has a functional group which can react with a crosslinking agent. This is because the adhesive layer second portion 121B and the substrate layer 122 can be chemically bonded. The functional group of the thermoplastic resin is, for example, a hydroxyl group, a carboxylic acid group, an epoxy group, an amine group, a thiol group, and a phenol group. As a thermoplastic resin, an acrylic polymer is preferable from a viewpoint, such as adjustment of a functional group. As the acrylic polymer, for example, (meth)acrylic acid C1-C20 alkyl esters such as (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and octyl (meth)acrylate homo or copolymer of (meth)acrylic acid alkyl esters such as; (meth)acrylic acid alkyl ester and other copolymerizable monomers - For example, carboxyl group or acid anhydride group containing monomers, such as acrylic acid, methacrylic acid, itaconic acid, a fumaric acid, and maleic anhydride; hydroxyl group-containing monomers such as (meth)acrylic acid 2-hydroxyethyl; Amino group-containing monomers, such as (meth)acrylic-acid morpholyl; amide group-containing monomers such as (meth)acrylamide; cyano group-containing monomers such as (meth)acrylonitrile; A copolymer with (meth)acrylic acid ester etc. which has alicyclic hydrocarbon groups, such as (meth)acrylic-acid isobornyl, etc. are mentioned. Content of the resin component in the adhesive bond layer 2nd part 121B is 94 weight% or more, for example, Preferably it is 95 weight% or more. Content of the resin component in the adhesive bond layer 2nd part 121B is 99.99 weight% or less, for example, Preferably it is 99.97 weight% or less.

The crosslinking agent is, for example, an isocyanate-based crosslinking agent, an epoxy-based crosslinking agent, an oxazoline-based crosslinking agent, and a peroxide. A crosslinking agent can be used individually by 1 type or in combination of 2 or more types. An isocyanate type crosslinking agent and an epoxy type crosslinking agent are preferable. The isocyanate-based crosslinking agent is, for example, aromatic isocyanates such as tolylene diisocyanate and xylene diisocyanate, alicyclic isocyanates such as isophorone diisocyanate, and aliphatic isocyanates such as hexamethylene diisocyanate. More specifically, for example, lower aliphatic polyisocyanates such as butylene diisocyanate and hexamethylene diisocyanate, cycloaliphatic isocyanates such as cyclopentylene diisocyanate, cyclohexylene diisocyanate and isophorone diisocyanate, 2,4 -Aromatic diisocyanates such as tolylene diisocyanate, 4,4'-diphenylmethane diisocyanate, xylylene diisocyanate and polymethylene polyphenyl isocyanate, trimethylolpropane/tolylene diisocyanate trimer adduct (Nippon Polyurethane Kogyo Co., Ltd.) Manufactured, trade name Coronate L), trimethylolpropane/hexamethylene diisocyanate trimer adduct (Nippon Polyurethane Kogyo Co., Ltd. trade name Coronate HL), isocyanurate form of hexamethylene diisocyanate (Nippon Polyurethane Kogyo Co., Ltd.) Isocyanate adducts such as manufactured, trade name Coronate HX), trimethylolpropane adduct of xylylene diisocyanate (Mitsui Chemical Co., Ltd., trade name D110N), hexamethylene diisocyanate trimethylolpropane adduct (Mitsui Chemical Co., Ltd. trade name) D160N); Polyether polyisocyanate, polyester polyisocyanate, and an adduct of these and various polyols, polyisocyanate polyfunctionalized by an isocyanurate bond, a biuret bond, an allophanate bond, etc. are mentioned. Among these, it is preferable to use an aliphatic isocyanate because the reaction rate is fast. An isocyanate type crosslinking agent may be used individually by 1 type, and may mix and use 2 or more types. Content of the isocyanate type crosslinking agent in the adhesive bond layer 2nd part 121B is 0.01-5 weight part with respect to 100 weight part of resin components, Preferably it is 0.03-4 weight part. It is possible to make it contain suitably in consideration of cohesive force, prevention of peeling in a durability test, etc.

The adhesive layer 121 may be manufactured by screen printing, rotary screen printing, inkjet printing, gravure printing, roll-to-roll, or the like. From the viewpoint of productivity, rotary screen printing is preferable. Only one type of these coating methods can be used, and it can also be used combining them. In these methods, the varnish is sometimes exposed to the air during application. It is preferable to use the low volatility solvent which can suppress the change of the varnish density|concentration during coating. Such solvents are, for example, MIBK, butyl acetate, cyclohexanone, γ-butyrolactone, isophorone, carbitol acetate, DMSO, DMAc, NMP and the like.

variation 8.1

The second region 122B is a region where a primer is applied after corona discharge treatment. Modification 8.1 is a combination of Modification Example 8 and Modification Example 1. Suitable examples of modification 8.1 apply mutatis mutandis 1.

variation 8.2

The first area 122A is a corona discharge-treated area. Modification 8.2 is a combination of Modification Example 8 and Modification Example 2. Suitable examples of modification 8.2 apply mutatis mutandis 2 mutatis mutandis.

variation 8.3

The first area 122A is an area where the primer is applied after corona discharge treatment. Modification 8.3 is a combination of Modification Example 8 and Modification Example 3. Suitable examples of modification 8.3 apply mutatis mutandis 3 mutatis mutandis.

variation 8.4

The first main surface of the base layer 122 is a surface coated with a primer after corona discharge treatment. Modification 8.4 is a combination of Modification Example 8 and Modification Example 4. Suitable examples of modification 8.4 apply mutatis mutandis 4 mutatis mutandis.

variation 8.5

The first area 122A is an embossed area. Modification 8.5 is a combination of Modifications 8 and 5.

variation 8.6

The second region 122B is an embossed region. Modification 8.6 is a combination of Modification Example 8 and Modification Example 6.

variation 8.7

The first main surface of the base layer 122 is an embossed surface. Modification 8.7 is a combination of Modifications 8 and 7.

variation 9

As shown in FIG. 13 , the adhesive layer 121 includes a first layer 1211 and a second layer 1212 . The first layer 1211 has a disk shape. Both surfaces of the first layer 1211 are defined as a first main surface and a second main surface opposite to the first main surface. The first main surface of the first layer 1211 is in contact with the separator 11 . The second main surface of the first layer 1211 is in contact with the second layer 1212 . The second layer 1212 has a disk shape. Both surfaces of the second layer 1212 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the second layer 1212 is in contact with the first layer 1211 . The second main surface of the second layer 1212 is in contact with the base layer 122 .

variation 9.1

The second region 122B is a region where a primer is applied after corona discharge treatment. Modification 9.1 is a combination of Modification 9 and Modification 1. Suitable examples of modification 9.1 apply mutatis mutandis 1.

variation 9.2

The first area 122A is a corona discharge-treated area. Modification 9.2 is a combination of Modification Example 9 and Modification Example 2. Suitable examples of modification 9.2 apply mutatis mutandis 2 mutatis mutandis.

variation 9.3

The first area 122A is an area where the primer is applied after corona discharge treatment. Modification 9.3 is a combination of Modification Example 9 and Modification Example 3. A suitable example of modification 9.3 applies mutatis mutandis 3 mutatis mutandis.

variation 9.4

The first main surface of the base layer 122 is a surface coated with a primer after corona discharge treatment. Modification 9.4 is a combination of Modifications 9 and 4. Suitable examples of modification 9.4 apply mutatis mutandis 4 mutatis mutandis.

variation 9.5

The first area 122A is an embossed area. Modification 9.5 is a combination of Modifications 9 and 5.

variation 9.6

The second region 122B is an embossed region. Modification 9.6 is a combination of Modifications 9 and 6.

variation 9.7

The first main surface of the base layer 122 is an embossed surface. Modification 9.7 is a combination of Modifications 9 and 7.

variation 10

As shown in FIG. 14 , the adhesive layer 121 includes a first layer 1211 and a second layer 1212 . The first layer 1211 has a donut plate shape. The first layer 1211 is located in the dicing ring fixing region 12B. Both surfaces of the first layer 1211 are defined as a first main surface and a second main surface opposite to the first main surface. The first main surface of the first layer 1211 is in contact with the separator 11 . The second main surface of the first layer 1211 is in contact with the second layer 1212 . The first layer 1211 may have adhesiveness. The second layer 1212 has a disk shape. Both surfaces of the second layer 1212 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the second layer 1212 is in contact with the first layer 1211 in the dicing ring fixing region 12B. The second main surface of the second layer 1212 is in contact with the base layer 122 .

variation 10.1

The second region 122B is a region where a primer is applied after corona discharge treatment. Modification 10.1 is a combination of Modification 10 and Modification 1. Suitable examples of modification 10.1 apply mutatis mutandis 1.

variation 10.2

The first area 122A is a corona discharge-treated area. Modification 10.2 is a combination of Modification 10 and Modification Example 2. Suitable examples of modification 10.2 apply mutatis mutandis 2 mutatis mutandis.

variation 10.3

The first area 122A is an area where the primer is applied after corona discharge treatment. Modification 10.3 is a combination of Modification 10 and Modification 3. Suitable examples of modification 10.3 apply mutatis mutandis 3 mutatis mutandis.

variation 10.4

The first main surface of the base layer 122 is a surface coated with a primer after corona discharge treatment. Modification 10.4 is a combination of Modifications 10 and 4. Suitable examples of modification 10.4 apply mutatis mutandis 4 mutatis mutandis.

variation 10.5

The first area 122A is an embossed area. Modification 10.5 is a combination of Modifications 10 and 5.

variation 10.6

The second region 122B is an embossed region. Modification 10.6 is a combination of Modifications 10 and 6.

variation 10.7

The first main surface of the base layer 122 is an embossed surface. Modification 10.7 is a combination of Modifications 10 and 7.

variation 11

In the eleventh modification, the dicing die bonding tape 1 is used for the DBG method. Specifically, a step of fixing a semiconductor wafer in which a groove is provided on the front surface (front surface) of the semiconductor wafer to a backgrind film, grinding the back surface of the semiconductor wafer, and removing the separator 11 from the dicing die bonding tape 1 and fixing the semiconductor wafer after grinding to the adhesive layer 121 of the dicing die bonding film 12, applying a tensile stress to the dicing die bonding film 12, and after dividing the semiconductor chip with an adhesive layer including the process of forming

These modified examples can be combined with other modified examples.

[Example]

Hereinafter, the present disclosure will be described in detail using examples, but the present disclosure is not limited to the following examples without departing from the gist thereof.

Example 1 to 4 comparative example 2 to in 3 dicing Fabrication of die bonding film

Acrylic polymer, silica filler, solid epoxy resin, solid phenol resin were dissolved or dispersed in methyl ethyl ketone according to Table 1, coated on a PET separator, and methyl ethyl ketone was blown at 130 ° C. for 2 minutes, and the thickness of 10 μm was An adhesive film was obtained. The 130-micrometer-thick EVA film made from Kurashiki Boseki was corona-discharge-treated under the conditions shown in Table 1 using the corona treatment machine (500 series manufactured by PILLAR TECHNOLOGIES). The adhesive film was laminated|stacked on the EVA film after corona treatment at 60 degreeC, 10 mm/sec, 0.15 MPa, and the dicing die bonding film of Examples 1-4 and Comparative Examples 2-3 was obtained. Each dicing die bonding film has an EVA film and the adhesive film located on the EVA film. Both surfaces of the EVA film are defined by a first main surface in contact with the adhesive film and a second main surface facing the first main surface. Both surfaces of the adhesive film are defined by a first main surface and a second main surface in contact with the EVA film. Each dicing die bonding film forms a disk shape. In each dicing die bonding film, a dicing ring holding region is located on the periphery of the wafer holding region.

Corona Throughput

The corona treatment amount is expressed by the following formula.

Discharge throughput (W min/m2) = voltage of discharge electrode (W) ÷ electrode width (m) ÷ speed (m/min)

comparative example in 1 dicing Fabrication of die bonding film

A dicing die bonding film was produced in the same manner as in Example 1, except that the EVA film was not subjected to corona discharge treatment.

adhesive film and EVA 90 degrees of film peel force

A backing tape (BT-315 manufactured by Nitto Denko Corporation) was affixed to the adhesive film of the dicing die bonding film at room temperature of 23°C, and a dicing die bonding film test piece having a length of 120 mm and a width of 50 mm was cut out. The chamber of Autograph AGS-J (made by Shimadzu Corporation) was adjusted to 23 degreeC or -15 degreeC, and the T peel test was done at the peeling angle of 90 degrees, and the peeling speed of 300 mm/min. The average values of peel force are shown in Table 1.

surface free energy

A backing tape (BT-315 manufactured by Nitto Denko Corporation) was affixed to the adhesive film of the dicing die bonding film at room temperature of 23°C and 50±10% RH, and the adhesive film was peeled from the EVA film. A series of test mixtures having stepwise increasing surface tension prepared in accordance with JIS K 6768:1999 were dropped on the first main surface of the EVA film and the second main surface of the adhesive film within 5 minutes after peeling, and spread with a 10 mm wide spatula. Thus, a liquid film with a length of about 5 cm was formed, the liquid film was observed after 2 seconds, and a test mixture that maintained the shape of the liquid film accurately for 2 seconds was selected. Table 1 shows the surface tension of the selected test mixture.

division · pick-up

Using a dicing apparatus (DFD6361) manufactured by DISCO, a cutout of 20 to 25 µm in width and 50 µm in depth was made in a 12-inch bare wafer at 8 mm x 12 mm. A backgrind tape (UB-3083D manufactured by Nitto Denko Corporation) was attached to the cut surface, and it was ground with a backgrind device (DGP8760) manufactured by DISCO until the bare wafer thickness was set to 20 µm. After grinding, the wafer was bonded to the adhesive film of the dicing die bonding film at 60° C., 0.15 MPa, and 10 mm/sec with a laminator. The dicing ring was fixed to the adhesive film of the dicing die bonding film with a laminator at 60° C., 0.15 MPa, and 10 mm/sec. The backgrind tape is peeled from the wafer after grinding, and using a cool expander (DDS3200 manufactured by DISCO), grinding at a cooling temperature of -15°C, a speed of 1 mm/sec, and an elongation of 11 mm, the wafer is divided, and the temperature is 80°C, Stretching was performed on a heating table at a speed of 1 mm/sec and a stretching amount of 7 mm, and thermal contraction (heat shrink) was performed at 200°C. By the above means, the chip|tip with an adhesive film was formed after division. In order to check whether the adhesive film after division is broken along the division line, 30 chips with an adhesive film after division were observed in each example. The division rate was calculated|required by the following formula, 80% or more of division rate made 80 % or more into (circle), and less than 80 % made x, and the determination result is shown in Table 1.

division rate

= Number of chips with adhesive film after division that are broken along the division line/30

pick-up

After division, 10 chips with an adhesive film were picked up by the die bonder SPA300 manufactured by Shinkawa Corporation, the case where the number of successes was 8 or more was made into (circle), and the case where it was less than 8 was made into x.

Claims (5)

separator and
A film comprising an adhesive layer and a substrate layer,
The adhesive layer is located between the separator and the substrate layer,
In the wafer fixing region of the film, the adhesive layer and the 90 degree peel force at 23 ° C in the base layer are 0.02N/20mm to 0.5N/20mm,
In the wafer fixing region, the 90 degree peeling force at -15 ° C in the adhesive layer and the base layer is 0.1N/20mm or more,
Both surfaces of the base layer are defined by a first main surface and a second main surface in contact with the adhesive layer,
The surface free energy of the first main surface in the base layer with respect to the wafer fixing region is 32 to 39 mN/m,
Both surfaces of the adhesive layer are defined by a first main surface in contact with the separator and a second main surface in contact with the base material layer,
The dicing die bonding tape, wherein the surface free energy of the second main surface in the adhesive layer with respect to the wafer holding region is 34 to 50 mN/m. The method of claim 1,
Let E2 be the surface free energy of the second main surface in the adhesive layer with respect to the wafer holding region;
When the surface free energy of the first main surface in the base layer with respect to the wafer fixing region is E1,
The difference between E2 and E1 is 15 mN/m or less,
Dicing die bonding tape. delete The dicing die bonding tape of Claim 1 whose storage elastic modulus at 23 degreeC in the said adhesive bond layer is 10 GPa or less. A step of removing the separator from the dicing die bonding tape according to any one of claims 1, 2 and 4, and fixing a semiconductor wafer to the adhesive layer of the film;
applying a tensile stress to the film, and forming a semiconductor chip provided with an adhesive layer after division
A method of manufacturing a semiconductor device.

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