KR100816881B1 - The composition of a film-typed adhesive used in both dicing of wafer and bonding of the diced chips - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dicing die-bonding film, and more particularly, a point-and-adhesive layer 20 and a wafer bonding layer composed of a support base layer 10, a point-and-adhesive layer 21, and a point-and-adhesive reinforcement layer 22. 30 is a dicing die-bonding film formed by sequentially laminating the wafer bonding protective layer 40, and a good adhesive force is given to the interface between the support base layer 10 and the point-adhesive layer 20. At the interface between the adhesive layer 20 and the wafer bonding layer 30, the upper and lower surfaces of the point and the adhesive layer 20 are configured to have different point and adhesive capabilities, respectively, so as to maintain a good peeling force. After dicing, when picking up the diced chip, the chip is allowed to be peeled off well from the multilayer film made of the support base layer 10 and the adhesive and adhesive layer 20. Can be easily picked up after dicing (pick-u) p) an improved dicing die-bonding film.

Dicing, Die Bond, Wafer, Chip Bonding, Film Adhesive

Description

Dicing Diebond Film {The composition of a film-typed adhesive used in both dicing of wafer and bonding of the diced chips}

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which is an example of a structure of the dicing die bond film of this invention.
[Description of Major Symbols in Drawing]
10: support base layer 20: point, adhesive layer
21: point, adhesive layer 22: point, adhesive reinforcing layer
30: wafer bonding layer 40: wafer bonding protective layer

The present invention is a dicing die-bonding film formed by sequentially stacking the support base layer 10, the point and adhesive layer 20, the wafer bonding layer 30 and the wafer bonding protection layer 40, the support base layer 10 ) And an improved dicing die-bonding film in which good adhesion is imparted to the interface between the point-adhesive layer 20 and the adhesive layer 20 and the wafer bonding layer 30. will be.

The dicing die-bonding film is fixed to the semiconductor wafer frame, which is a preliminary step of the semiconductor chip process, in order to fix the diced semiconductor chip frame and related members to each other. After dicing in a state where the adhesive fixing function is imparted by a dicing die-bonding film (point-adhesive film), after dicing, the semiconductor chip is fixed in a state where the wafer bonding layer 30 is adhered to the lower surface. When the semiconductor chip including the wafer bonding layer 30 is entered into a bonding process with a portion to be bonded, the portion is completely fixed to the portion.

Looking at the conventional bonding method of the semiconductor chip, the semiconductor wafer on which the circuit pattern is made is adjusted to the thickness through the back polishing as needed, and then diced into a frame state on the chip (dicing process).

In the dicing process, in order to remove the cut | disconnected debris layer, it wash | cleans by giving a suitable hydraulic pressure (usually about 2 kg * cm <2>) to a semiconductor wafer. Subsequently, a liquid adhesive was applied to the chipped frame, and then fixed and mounted with an adherend such as a lead frame in a subsequent bonding step. In the mounting process, the adhesive was applied to the lead frame and the frame on the chip. In this method, however, the applied adhesive layer was not uniform, requiring a special coating device followed by a decrease in productivity and reliability.

In order to improve this, a dicing die-bonding film is proposed in which a dicing die bond film is provided with a chip fixing adhesive layer necessary for the mounting process, while maintaining the adhesive force to the semiconductor wafer [Japanese Patent Laid-Open No. 57632 (1985). )].

The dicing die-bonding film is designed to be peeled off from the wafer bonding layer 30 on the support base layer 10, and has a chip fixing effect during dicing, and a wafer bonding layer 30 adhered to the bottom after dicing. ) Effectively replaces the role of the liquid coating adhesive with the same function as the conventional bonding method (Japanese Patent Laid-Open Publication No. 019516 (2005), Japanese Patent Laid-Open Publication No. 023188 (2005), and Japanese Patent Laid-Open Publication No. 002239 ( 2005), Japanese Patent Application Publication No. 186429 (2004), Japanese Patent Application Publication No. 095844 (2004), Japanese Patent Application Publication No. 091563 (2004), Japanese Patent Application Publication No. 306654 (2003), Japanese Patent Application Publication No. 055623 (2003) )]. That is, after fixing and dicing the semiconductor wafer while the wafer bonding layer 30 is held at the bottom, the support substrate layer is physically stretched and the point-and-adhesive layer is attached to the chip-like frame by lowering the point and adhesive force therebetween. And the wafer bonding layer 30 attached to the bottom was individually recovered and fixed to the adherend such as a lead frame through the wafer bonding layer 30.

However, in the above-mentioned type of dicing die-bonding film, the adhesive and the adhesive have poor dicing defects due to poor fixation (dimension instability), lack of peeling force, and the like. After dicing, the chipped frame with the adhesive layer was desirably peeled off from the support base layer and transferred to the bonding process.

That is, when dicing, it was not easy to make only the minimum adhesive force required at the time of pressing and fixing two different characteristics of adhesion and peeling with only one point and adhesive film, and to easily separate at the time of peeling. In particular, when the semiconductor wafer is to be diced with a knife of the rotating disc, it was difficult to obtain a dicing die-bonding film that satisfies these characteristics because a large supporting force was required depending on the dicing state.

Several improved methods have been proposed to overcome the conflicting functional problems such as fixing and peeling.

For example, after dicing another sandwich-adhesive layer 20, which is capable of ultraviolet curing, in the form of a sandwich between the support substrate layer 10 and the wafer bonding layer 30, the point of the support substrate through ultraviolet curing A method of weakening the adhesive force between the adhesive layer 20 and the wafer bonding layer 30 to facilitate peeling between the two to facilitate pick-up of diced individual chip frames has been proposed (Japanese Patent Laid-Open No. 023188). (2005), Japanese Patent Laid-Open No. 338285 (2004), Japanese Patent Laid-Open Patent No. 043695 (2004)].

On the other hand, polyacrylates having different polarities were coated on the upper and lower surfaces of the poly (ethylene-co-vinylacetate) film, and there was also a method of using the adhesion and peeling function (Japanese Patent Laid-Open No. 338285 (2004), Japanese Laid-Open Patent No. 186429 (2004) and Japanese Laid-Open Patent No. 091563 (2004)].

However, even when the large chip frame of 10mm x 10mm or more is processed by the above methods, the support of pressing and fixing of the chip frame at the time of dicing increases due to the large chip frame and the adhesive force increases. It did not lead to good peelability, there was a problem that a lot of defective products due to the failure to adjust the adhesion and peeling force due to the failure to adjust the point and adhesiveness.

Accordingly, the inventors of the present invention have attempted to solve the above problems and to develop a dicing bond film provided with two different characteristics required for fixing and peeling to the point and adhesive layer contacted on the support base layer.

As a result, when forming a multi-layer structure having different van der Waals characteristics such that the upper and lower surfaces of the point and adhesive layer have high peeling force and high adhesive force, respectively, sufficient supporting force can be given to the frame when dicing. After dicing, the bonding force between the multilayer structures constituting the point-and-adhesive layer attached to the chip-on-frame is much smaller than the bonding force between the support base layer and the adhesive-adhesive layer, so that the point-and-adhesion layer and the wafer bonding layer can be easily peeled off. It has been found that the present invention can be completed.

Therefore, in the present invention, the point-and-adhesive layer 20, the wafer-bonding layer 30 and the wafer-bonding protective layer 40, which are composed of the support base layer 10, the point-and-adhesive layer 21 and the point-adhesive reinforcement layer 22, are provided. As a dicing die-bonding film laminated | stacked sequentially, the objective is to provide the improved dicing die-bonding film comprised so that the upper and lower surfaces of the said point and the bonding layer 20 may have a different point and the adhesive ability, respectively.

According to the present invention, the point-and-adhesive layer 20, the wafer-bonding layer 30 and the wafer-bonding protective layer 40, which are composed of the support base layer 10, the point-adhesive layer 21 and the point-adhesive reinforcement layer 22, are sequentially Are stacked and

The peel force between the support base layer 10 and the point-adhesive layer 21 is in the range of 3 to 30 N / 20 mm (90 ° C., peel rate 300 mm / min),

A dicing die-bonding film having a peel force between the point and adhesive reinforcing layer 22 and the wafer bonding layer 30 in a range of 0.01 to 0.30 N / 20 mm (90 ° C., peeling rate 300 mm / min) do.

Hereinafter, the present invention will be described in detail.

The present invention provides a good adhesion to the interface between the support base layer 10 and the point-adhesive layer 20, and maintains a good peeling force at the interface between the point-adhesive layer 20 and the wafer bonding layer 30. The upper and lower surfaces of the point and the adhesive layer 20 have different points and adhesive capabilities, respectively, and exhibit excellent fixing function during dicing, and pick-up of the diced chip after dicing. In the up, the multilayer film composed of the support base layer 10 and the point-adhesive layer 20 is exfoliated well so that it can be easily picked up after dicing even in response to a large chip. It relates to a dicing die-bonding film.

Hereinafter, each constituent layer constituting the dicing die-bonding film of the present invention with reference to the drawings will be described in detail.

Figure 1 shows an example of a cross-sectional view of the dicing die-bonding film of the present invention, the adhesion between the upper and lower surfaces on the polyvinyl chloride film as the support base layer 10, that is, large and small van de Waals A film-type point and adhesive layer 20 having a force is used, and the adhesive and adhesive layer 20 may be further divided into a point and adhesive layer 21 and a point and adhesive reinforcing layer 22. The wafer bonding layer 30 itself also utilizes a film-like point-and-adhesive layer that causes a difference (a difference in van de Waals) between the top and bottom surfaces.

The support base layer 10 and the point-adhesive layer 20 are adhered to and fixed to the wafer bonding layer 30 during dicing, and are peeled off and discarded after dicing, and the wafer bonding layer 30 is After the support base layer 10 and the point and adhesive layer 20 are peeled off, they are brought into close contact with the lower surface of the wafer layer, and then transferred and heated in the bonding process to achieve complete die bonding by 'partial melting and sintering'. do.

That is, after dicing, on the dicing die-bonding film structure, a bonding force is formed between the upper surface of the support base layer 10 and the lower surface of the point-adhesive layer 20, and the upper surface of the point-adhesive layer 20 and the wafer bonding layer 30. ), The peeling force is applied between the lower surface of the wafer) and the bonding force is exerted between the upper surface of the wafer bonding layer 30 and the wafer, respectively, to provide a fixing function during dicing, and after the dicing, the wafer bonding layer 30 adheres to the lower surface of the wafer. The dot-adhesive layer 20 (the multilayer film in which the dot-adhesive layer 21 and the point-adhesive reinforcement layer 22 were in close contact) on the base material layer 10 was designed to be peeled satisfactorily.

As a result, when the point-adhesive reinforcing layer 22 and the wafer bonding layer 30 are in contact with each other, the point-adhesive layer 21 is directed toward the support base layer 10, and the wafer bonding layer 30 is directed toward the wafer. The bonding force was increased to increase the bonding force, and the interface between the point and adhesive layer 20 and the wafer bonding layer 30 and the wafer in close contact was induced to be lightly peeled after dicing.

In this way, the dicing defect is eliminated even in the case of a large chip exceeding 10 mm x 10 mm, and after dicing, the chip-shaped frame on which the wafer bonding layer 30 is attached is supported on the supporting substrate surface (point and adhesive layer 22). The dicing pre- and post dicing process, which allows easy peeling and good pick-up, yields a smooth dicing die-bonding film.

In this dicing die-bonding film of the present invention, a point-adhesive layer 20 composed of a point-adhesive layer 21 and a point-adhesive reinforcement layer 22 is placed on a support base layer 10, and a wafer is placed thereon. The bonding layer 30 and the wafer bonding protection layer 40 are laminated.

The support base layer 10 and the point-adhesive layer 20 serve as a support base for the dicing die bond film.

As the support base layer 10, for example, low density polyethylene, medium density polyethylene, high density polyethylene, ultra high density polyethylene, polypropylene, poly (ethylene-co-propylene) random copolymer, poly (ethylene-co-propylene ) Block copolymers, ethylene-vinyl acetate copolymers, random and alternating copolymers of poly [ethylene-co-acrylic (methacrylic) acid], poly [ethylene-co-acrylic (methacrylic) ester], poly (ethylene polyolefin copolymers such as -co-butene) and poly (ethylene-co-hexene), polyesters such as polyethylene terephthalate and polyethylene naphthalate, polyurethane, polycarbonate, polyimide, polyester ether ketone, poly Esterimide, wholly aromatic polyimide, polyphenylene sulfide, aramid (paper), glass, glass fiber, fluorocarbon resin, poly (vinyl chloride), poly (vinylidene chloride), cellulose resin, silicone Resin, metal (foil) paper, and the like, and those partially crosslinked thereof may also be used.

Although the film material of the support base material layer 10 is generally an unstretched type | mold, you may use for uniaxial and biaxial stretching as needed. When a resin sheet imparting heat shrinkability by stretching or the like is used, the support base layer 10 is heat-shrinked after dicing, thereby maintaining loss of bonding force and temporary adhesion area due to temporary heat shrinkage at the interface with the wafer bonding layer 30. Thus, the frame on the chip to which the wafer bonding layer 30 was in close contact could be obtained more easily (Japanese Patent Laid-Open No. 11043656 (1999)).

In the present invention, it is preferable to use a transparent resin having a small elongation and good UV permeability as the support base layer 10 of the dicing die-bonding film. Specifically, for example, a vinyl chloride resin, a vinyl chloride-vinylacetate copolymer, It is preferable to use a styrene-butadiene copolymer, an acrylonitrile-butadiene copolymer, or the like. In particular, as said copolymer, the weight average molecular weight is the range of 5-1.2 million, and the range of glass transition temperature is good to use the thing of the range of 70-100 degreeC. At this time, if the weight average molecular weight of the copolymer is less than 50,000, the mechanical properties are lowered, and if it exceeds 1.2 million, the film formation is lowered. On the other hand, if the glass transition temperature of the copolymer is less than 70 ℃, the adhesive force is increased and the flexibility is not good, and if the glass transition temperature exceeds 100 ℃, there is a problem that the flexibility is reduced.

The surface of the support base layer 10 may be chemically treated with general surface treatments such as chromic acid treatment, ozone treatment, flame treatment, high voltage treatment, ionization radiation treatment, etc., in order to improve adhesion and support with adjacent layers. Physical treatments and primers may be coated to induce different bonding properties between the upper and lower surfaces.

However, the support base layer 10 according to the present invention maintains a large polarity difference between the top and bottom surfaces or uses a polar resin-based support base layer 10 so that the top and bottom surface characteristics are kept different. The lower surface of the adhesive layer 20, that is, the bonding force between the point and the adhesive layer 21 is maintained large, and the upper surface of the point and the adhesive layer 20, namely, the point and adhesive reinforcing layer 22 and the wafer bonding layer 30 By keeping the adhesive force small, the wafer bonding layer 30 is never transferred to the point-adhesive reinforcing layer 22.

Although the thickness of the support base layer 10 may be selected in a particularly limited state, it is generally in the range of 5 to 200 μm, and the thickness of the point-adhesive layer 20 composed of a multilayer of coating or sandwich concept is 5 It is preferable to make it into the range of -100 micrometers.

In the point and adhesive layer 20 of the present invention, the point and adhesive layer 21 and the point and adhesive reinforcing layer 22 form a multilayer structure. In such a point and the adhesive layer 20, the size of the point and the adhesive force to the top surface of the support base layer 10 to the point and the adhesive force to the wafer bonding layer 30 is largely designed.

The point and adhesive layer 21 may be a single molecule or an oligomer or a polymer resin or a mixture thereof containing at least one adhesive functional group selected from esters, ethers, epoxies and hydroxy, and polymerized them. The glass transition temperature at the time of adjustment is adjusted in the range of -40-10 degreeC in consideration of the flexibility and hardness of a film. On the other hand, the point-adhesive reinforcement layer 22 should have a smaller content of adhesive functional groups than the point-adhesive layer 21, and here, poly (ethylene) and poly [ethylene-co-acryl (methacryl) Acid], poly (ethylene-co-maleic anhydride), poly (ethylene-co-vinylacetate), poly (ethylene-co-propylene) and other olefin polymer resins such as vinyl lactone monomers graft polymerization Can be used for the upper surface, the upper surface, and the lower surface of the point-adhesive reinforcing layer 22.

Here, the copolymer resin grafted with the lactone monomer, which is utilized on the upper and lower surfaces of the point and adhesive reinforcing layer 22 in contact with the wafer bonding layer 30, has a content of 0.3 to 2% by weight of lactone monomers such as vinyl lactone. If the content is less than 0.3% by weight is less effective, the use of more than 2% by weight increased the adhesion or partial coagulation occurred.

The point-adhesive layer 20 uses the point-adhesive reinforcement layer 22, which is the upper layer of the point-adhesive layer 20, so that the adhesive strength of the upper and lower surfaces with respect to the point-adhesive reinforcement layer 22 is largely different. By forming a multilayer structure again or by surface-treating one surface of the single point of adhesive reinforcement layer 22, the structure of the upper and lower surfaces can be intentionally created so that the difference in adhesion between the upper and lower surfaces is large.

More specifically exemplifying the composition of the resin used in the point-adhesive reinforcing layer 22: (1) vinyl lactone-grafted polyethylene having a weight average molecular weight in the range of 50,000 to 300,000, polyethylene, polypropylene, and poly (ethylene-co- A mixture comprising any one or more resins selected from propylene), poly (ethylene-co-vinylacetate), poly [ethylene-co-acrylic (methacrylic) acid], and poly (ethylene-co-maleic anhydride); Lactone-grafted poly (ethylene-co-vinylacetate) and poly [ethylene-co-acrylic (methacrylic) acid] having a content of acrylic (methacrylic) or maleic anhydride in the range of 0.5 to 5% by weight, respectively; and At least one resin selected from poly (ethylene-co-maleic anhydride) and poly [ethylene-co-acrylic (methacrylic) acid] each containing 10 to 40% by weight of acrylic (methacrylic) or maleic anhydride; And A film is formed into a multilayer using a mixture with at least one resin selected from poly (ethylene-co-maleic anhydride) and the like.

As described in the above paragraph, the adhesive force between the point-adhesive reinforcement layer 22 and the wafer bonding layer 30 when the 2 kgf load is applied is in the range of 0.01 to 0.30 N / 20 mm (90 ° C., the peel rate 300 mm / min). , The peel force between the adhesive layer 21 and the support base layer 10 was adjusted to 3 to 30 N / 20 mm (90 ° C., peel rate 300 mm / min) or more. When the former and the latter both go to a lower range, a fixing function is required, and when the latter goes to a higher range, a peeling force is greatly required, which is a cause of failure during pick-up. On the other hand, when the latter goes to a low range, there is a problem in the fixing function, and when going to a higher range, the subsequent result exhibits sufficient adhesive function, so that no further improvement for the peel force adjustment is necessary.

As described above, the components of the point-adhesive layer 21 and the point-adhesive reinforcement layer 22 are limited, but the point-adhesive layer 21 and the point-adhesive reinforcement layer 22 constituting the point-adhesive layer 20 are described. In order to make a difference in the point and adhesive strength of the cross-linking layer through the irradiation of ultraviolet rays by using a double-layered point and adhesive layer or by inserting a part of the UV-curable oligomer between the point and adhesive layer 21 and the point and adhesive reinforcing layer 22. By increasing the glass transition temperature to lower the van der Waals force and shrinking, the point and adhesive force of the point and adhesive layer 22 of the dicing fixing function in contact with the wafer bonding layer 30 can be easily reduced. . In the former case, by using a technique of ultraviolet curing the point-and-adhesive layer 21 that partially contacts the ring fixing ring frame, the point-and-adhesive force can be easily peeled off by adjusting to a state where the point-and-adhesive force is significantly lowered.

That is, in addition to adjusting the van der Waals forces of the upper and lower surfaces of the support base layer 10 and the point-adhesive layer 20 differently, the UV-curable oligomer is partially inserted into the point-adhesive layer 21 and then cured. It is better to provide a shrinkage function to better induce the peeling of the point-adhesive reinforcing layer 22. When picking up the diced wafer chips, the peeling between the support base layer 10 and the wafer bonding layer 30 is made easier.

The effect of weakening the adhesive force between the wafer bonding layer 30 and the support base layer 10 on which the point-and-adhesive reinforcement layer 22 is covered in contrast to the use of the ultraviolet ray irradiation due to the insertion of the UV-curable oligomer. By doing so, after dicing, peeling becomes easy when picking up. On the other hand, even in the same spot and adhesive layer 20, the part which is not irradiated with ultraviolet rays will maintain the peeling force larger than the irradiated part. As a result, in the wafer bonding layer 30, a larger holding force can be ensured when dicing by the adhesive force by the uncured ultraviolet curable point-and-adhesive. Thus, the point-and-contact layer 20 into which the UV-curable oligomer is introduced is bonded to the wafer bonding layer 30 for fixing the chip-shaped frame (semiconductor chip, etc.) to a frame-like adherend (for example, a semiconductor device) such as a substrate. · Better balance of exfoliation.

The wafer bonding layer 30 is used as a molten adhesive after dicing, but the point-adhesive layer 20 comes into contact with a ring mechanism (fixing function) for fixing the wafer during dicing. As a result of this addition, more adhesive force is generated as compared with the adhesive force to the point-adhesive layer 20 in contact with the wafer bonding layer, so that peeling with the ring mechanism may be a problem.

Therefore, after performing the fixing function according to the crimping of the fixing ring mechanism, the point-adhesive layer 20 has a better peeling force, unlike when only the wafer bonding layer 30 is applied to make the peeling easy. It must be designed to maintain. Therefore, as the UV-curable monomer that provides more peeling force to the point-adhesive layer 20, it can be used without particular limitation as well as exhibiting thermal adhesiveness by having a radiation-curable functional group in a carbon-carbon double bond or the like.

Unlike the general pressure-sensitive adhesives such as acrylic adhesives and rubber-based adhesives, the UV-curable point / adhesives contain some UV-curable unit components or oligomer components. As these dots and adhesives, it is good to utilize the point and adhesive component based on an acryl-type polymer from a viewpoint of reducing contamination to a semiconductor wafer.

As an ultraviolet curing acryl-type monomer, acrylic (methacrylic) acid alkyl ester (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t) -Butyl ester, pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, deseal ester, isodeseal ester, undecylester ester, dodeceal ester, tridecyl Alkyl ester or cyclo of C1-C30, especially C4-C18 linear or branched acryl (methacrylic) acid of an alkyl group, such as ester, a tetradecyl ester, a hexadecylester ester, an octadecylester ester, an eicoseal ester, 1 type or 2 of alkyl esters (for example, cyclopentyl ester, cyclohexyl ester, etc.) More than one species can be used.

In addition to the above UV-curable monomers, other monomer components copolymerizable with the acrylic (methacrylic) alkyl ester or cycloalkyl ester as necessary for the purpose of modifying cohesion, heat resistance (hardness and flexibility), chemical resistance, and the like. It is preferable to include the corresponding monomer.

As such a monomer component, For example, Carboxyl group containing monomers, such as acrylic acid, methacrylic acid, itaconic acid, maleic acid, fumaric acid, a crotonic acid; Acid anhydride monomers such as maleic anhydride and itaconic anhydride; 2-hydroxyethyl acrylic acid (methacrylic), 2-hydroxyhexyl acrylic acid (methacrylic), 4-hydroxybutyl acid acrylic (methacrylic), 6-hydroxyhexyl acrylic (methacrylic) acid, acrylic (meth) Hydroxy-group containing monomers, such as 8-hydroxyhexyl acrylic acid, 8-hydroxyoctyl acrylic (methacrylic) acid, 10-hydroxydecyl acrylic (methacrylic) acid, and 12-hydroxylauryl acrylic (methacrylic) acid ; Styrenesulfonic acid, arylsulfonic acid, 2-acrylic (methacryl) amide-2-methylpropanesulfonic acid, acryl (methacryl) amide propanesulfonic acid, sulfofylacryl (methacryl) acrylate, acryl (methacryl) Sulfonic acid group-containing monomers such as loyloxynaphthalenesulfonic acid; Acrylamide, acrylonitrile, etc. are mentioned. One type or two types or more can be used for such a copolymerizable monomer component. The amount of such copolymerizable monomer is preferably 20% by weight or less of the total monomer components.

Here, in order to crosslink the acrylic monomers, a separate copolymerized polyfunctional monomer may be included.

Such polyfunctional monomers include hexyldiol diacrylamide (methacrylate), polyethylene glycol diacrylamide (methacrylate), polypropylene glycol diacrylamide (methacrylate), neopentylglycol acrylamide (methacrylate), pentaes Lithol diacrylamide (methacrylate), trimethylolpropane triacrylamide (methacryl) late, pentaerythritol triacrylamide (or methacrylate adduct thereof), dipentaerythritol hexaacrylic acid (methacryl) ) Acrylate, epoxy acrylate (methacrylate), N-vinylpyrrolidone urethane acrylate, 2-methacryloyloxyethyl isocyanate carbamate, polyester acrylate (methacrylate) acrylate, urethane acrylate (methacrylate) And 1,4-butanol acryl (methacryl) late. Examples of the oligomers include urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and the molecular weight is preferably in the form of oligomers in the range of about 1000 to 30000.

The compounding quantity of an ultraviolet curable monomer component and an oligomer component can be decided suitably by selecting the quantity which can reduce the adhesive force of the point and adhesive layer 20 according to the characteristic of the said point and adhesive layer 20. Generally, it is within the range of 30 parts by weight based on 100 parts by weight of the monomer to be polymerized into an acrylic polymer on the basis of the pressure-sensitive adhesive, preferably 2 to 10 parts by weight. In addition, as the polymer additive form of UV curing, cinnamolate of polyvinyl alcohol, stilbenzolate, and the like may be utilized.

Such a special polyfunctional monomer can also be used 1 type or in combination or 2 or more types. The content of the polyfunctional monomer, oligomer, and polymer additive may be maintained at 40% by weight or less of the total monomer components even if the content of the polyfunctional monomer, oligomer, and polymer additive is taken in large amounts.

An acrylic monomer can be made by using a 1 type, or 2 or more types together, and employ | adopting a monomer mixture for solution, emulsion, suspension polymerization, etc. In view of preventing contamination of the adhesive layer (adherent material) attached to the frame, it is better not to use a low molecular polymer. The weight average molecular weight of an acryl-type monomer should be 150,000 or more, Preferably it is the range of 200,000-3 million.

In order to raise the weight average molecular weight of acrylic polymer which is a base component of these adhesives, you may select suitably and employ | adopt an external crosslinking agent. The external crosslinking agent may be a method of adding and reacting a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine compound, or the like.

In the case of using an external crosslinking agent, the amount of the crosslinking agent to be used must maintain the balance of the crosslinked base polymer, and is appropriately selected according to the use as an adhesive. Generally, it is about 5 weight part or less with respect to 100 weight part of acryl polymers obtained by superposition | polymerization, and it is good to mix | blend a 0.1-4.5 weight part range here. If less than 0.1 parts by weight is less effective, if used in excess of 4.5 parts by weight side reactions such as changes over time, non-uniform partial hardening will follow. The ultraviolet curable component in these point and adhesive layers 20 can use general additives, such as various tackifiers and anti-aging agent, in addition to the said component as needed.

The method of increasing the molecular size using carbon-carbon double bonds to the acrylic polymer is not particularly limited, but molecular design for modification and modification of the side chain is easier than the main chain of the polymer.

For example, after copolymerizing a monomer having a polyfunctional group to an acrylic polymer, another functional group reacting with the functional group and a compound having a carbon-carbon double bond are condensed or kept under the ultraviolet curability of the carbon-carbon double bond. And a method of addition reaction. Combinations between these functional groups include a carboxyl group and an epoxy group, a carboxyl group and an aziridyl group, a hydroxyl group and an isocyanate group. Among the combinations of these functional groups, it is relatively good to select a combination of a hydroxyl group and an isocyanate group which is relatively easy to trace the reaction. As an isocyanate compound used here, methacryloyl isocyanate, 2-methacryloyl oxyethyl isocyanate, m-isopropenyl- (alpha), (alpha)-dimethylbenzyl isocyanate etc. are mentioned.

In order to improve the wettability, the polyacrylate blend may be coated with a primer component such as a colonate L (polyisocyanate), a polyamide copolymer, a butylated melamine resin, or the like to be coated on a relatively nonpolar support substrate layer 10. can do.

When the point-adhesive layer 20 is cured by ultraviolet rays, a photoinitiator is used. As photoinitiators, for example, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propylketone, α-hydroxy-α, α-dimethylacetophenone, 2-methyl-2-hydroxypropy Α-ketone compounds such as phenone and 1-hydroxycyclohexylphenyl ketone; methoxyacetophenone, 2,2'-dimethoxy-2-phenylacetophenone, 2,2'-dimethoxy-2-phenylaceto Phenone, 2,2'-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -morpholin propane-1, 2-benzyl-2-dimethylamino-1- (4-mo Acetophenone compounds such as polynophenyl) -butanone-1-one, benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and aniline methyl ether; ketal compounds such as benzyldimethyl ketal; Aromatic sulfonyl chloride compounds such as naphthalene sulfonyl chloride, photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime, benzophenone and benzoylbenzoic acid , 3,3'-dimethyl-4-methok Benzophenone compounds such as cybenzophenone, thiooxazolin, 2-chlorothiooxazoline, 2-methylthiooxazoline, 2,4-dichlorothiooxazoline, 2,4-diethyloxazoline, 2,4- Thiooxazoline compounds such as diisopropylthiooxazoline, caproquinone, halogenated ketones, acyl phosphoxide, acyl phosphide, etc. The amount of the photopolymerization initiator is an acrylic polymer constituting the point-adhesive layer 20. It is the range of about 0.05-20 weight part with respect to 100 weight part of monomers converted into the.

The ultraviolet curable point-adhesive layer 20 can be colored by ultraviolet irradiation, as necessary, to distinguish between before and after ultraviolet irradiation.

That is, the part irradiated with ultraviolet rays is colored by including the compound to be colored in the point-adhesive layer 20. In other words, the point-adhesive layer 20 is colored in correspondence with the wafer bonding layer 30. By doing so, the surface where the point-adhesive reinforcement layer 22 and the wafer bonding layer 30 come into contact with each other is easily recognized, and the fixing ring mechanism can be easily joined or peeled off. When the semiconductor element is detected by an optical sensor or the like, the detection accuracy is high, so that no malfunction occurs even when the semiconductor element is picked up.

The compound colored by ultraviolet irradiation is colorless or light color before ultraviolet irradiation, but becomes colored after ultraviolet irradiation. As a compound for a coloring agent, a spiropyran type is preferable, but 3- [N- (p-triamine)]-7-anilinofluuran, 3- [N- (p-triamine) -N-methylamine] -7-anilinofluorane, 3- [N- (p-triamine) -N-ethylamine] -7-anilinofluorane, 3-diethylamine-6-methyl-7-anilinofluorane, Crystal biorecrown, 4, 4 ', 4 "-tris dimethylamino triphenylmethane, etc. are mentioned.

The compound to be colored by ultraviolet irradiation is preferably dissolved in an organic solvent or the like or included in the adhesive solution in a fine powder state. The amount of the colorant compound used is in the range of 10 parts by weight or less, preferably 0.2 to 5 parts by weight, based on the point and adhesive layer 20. When the colorant compound is less than 0.2 part by weight, the coloring power is lowered. When the colorant compound is more than 10 parts by weight, it becomes difficult to transmit ultraviolet rays irradiated to the point-adhesive layer 20, resulting in insufficient curing of the point-adhesive layer 20, and the point-adhesive force is sufficient. This deterioration effect is not obtained.

In the wafer bonding film, when designing the point and adhesive force with respect to the wafer bonding layer 30, the peeling force at the lower surface of the wafer bonding layer 30 is greater than that at the upper surface of the wafer bonding layer 30 bonded to the wafer. To be maintained.

In the case where the point-and-adhesive layer 20 is a UV-curable point-and-adhesive, after forming the UV-curable point-and-adhesive layer 20 on the support base layer 10, the point-adhesive layer ( 20 is designed to utilize a UV curable point-and-adhesive layer 20 on a supporting substrate film to irradiate and harden ultraviolet light to 20) to more easily peel the point-and-adhesive layer 20 from the wafer bonding layer 30. .

Ultraviolet irradiation may also utilize a method of photomasking or locally curing only the necessary portion for light blocking of the wafer frame, the portion in contact with the fixing ring mechanism. When the curing reaction of radical reaction is caused by oxygen at the time of ultraviolet irradiation, it is necessary to block oxygen (air) or mix a small amount of oily wax on the surface of the ultraviolet curing point-adhesive layer 20. It is better to irradiate ultraviolet rays under nitrogen gas atmosphere or in a state in which a small amount of wax is mixed for oxygen blocking. Although the thickness of the point-adhesive layer 20 is not specifically limited, It is good that it is the range of about 1-50 micrometers from a viewpoint of the defect prevention of a wafer chip cut surface, and the fixed support of an adhesive layer.

In the dicing die-bonding film of this invention, when dicing the frame (semiconductor wafer etc.) crimped | bonded on the said point and adhesive reinforcement layer 22 on a chip | tip, it adheres closely to a frame and supports a cut piece When mounting the chip-shaped frame (semiconductor chip, etc.) to the device, the chip-shaped frame functions as an adhesive layer for fixing the chip-shaped frame to the semiconductor element (substrate, chip, etc.). In particular, it is important that the wafer bonding layer 30 also has a point and adhesiveness to some extent so that the broken pieces do not scatter when the wafer is diced. The wafer bonding layer 30 is designed to be in contact with the wafer frame in advance.

The wafer bonding layer 30 may be in a sheet form, specifically, all components obtained from a thermoplastic resin or a thermosetting resin may be utilized, and adhesiveness may be prevented during dicing in a state of being in close contact with the wafer frame at a normal temperature to 70 ° C. It is good to be possible.

Examples of the thermoplastic resin (thermoplastic die-bonding agent) that can be used as the wafer bonding layer 30 in the present invention include saturated polyester resins, thermoplastic polyurethane resins, amide resins (nylon resins), imide resins, and the like. Examples of the thermosetting resin (thermosetting die adhesive) include epoxy resins, unsaturated polyester resins, thermosetting acrylic resins, and phenolic resins. The thermosetting resin in solution state may be used by desolvating and sheeting, and may also be used in a B staged state to improve bleeding property. In addition, resins such as silicon, rubber, urethane, imide, acrylic, etc. having a high glass transition temperature may be used as the wafer bonding layer 30.

The wafer bonding layer 30 may have a multilayer structure having two or more layers by appropriately selecting and combining thermoplastic resins having different glass transition temperatures and thermosetting resins having different thermosetting temperatures, so that the adhesive strength between the upper and lower surfaces may be different. In addition, since cutting water may be used in the dicing process of a wafer frame, the wafer bonding layer 30 may absorb moisture and may have water content more than the grade. If it adheres in a water-containing state, it may arise in the hardening stage.

In addition, when manufacturing the wafer bonding layer 30 using a solvent, a combination of a polar group and a nonpolar group may be appropriately used so as to have different upper and lower polarities on the polyester protective layer 40.

The thickness of the wafer bonding layer 30 is not particularly limited, but is preferably in the range of about 10 to 50 µm in view of uniform bonding and bonding strength.

In the dicing die-bonding film of the present invention, chips, substrates, circuits, etc. may be destroyed by the generation of static electricity generated during the adhesion and peeling process. Therefore, the antistatic agent, metal powder, metal oxide, carbon black, and the like of the surfactant component are applied to the support base layer 10, the adhesive layer 21, the adhesive reinforcing layer 22, and the wafer bonding layer 30. A conductive material such as graphite may be added.

As described above, the adhesive force of the point-adhesive reinforcement layer 22 to the wafer bonding layer 30 with respect to the dicing die-bonding film is such that the point-adhesive layer 21 on the support base layer 10 or the point-adhesive reinforcement layer ( It is designed to be much smaller than the adhesion to 22). At room temperature, the adhesive force (90 ° C. peel force, peel rate 300 mm / min) of the point-adhesive reinforcement layer 22 to the wafer bonding layer 30 is 0.5 N / 20 mm or less due to the fixed holding force of the wafer and the peel force after dicing. As described above, the range of 0.01 to 0.30 N / 20 mm (90 ° C. peel force, peel rate 300 mm / min) is good.

That is, before dicing, the higher adhesive force of the point-and-adhesion layer 20 can suppress the generation of chip scattering, etc., and can exhibit sufficient supporting force during wafer processing, and after dicing, the point-and-adhesive reinforcement layer 22 is more favorable. Although it has a peeling force and is conveyed by a die bonding process, in the wafer bonding layer 30 of a dicing die-bonding film, it is good to perform the role of a protection / separation function before and after dicing. That is, the protection / separation function may be arbitrarily designed, adhered to and adhered to the frame on the wafer bonding layer 30 during storage and storage of the dicing die-bonding film, while being peeled off immediately before dicing. The function is terminated.

The wafer bonding layer 30 is a wafer bonding protective layer (40, not shown in FIG. 1) using a film such as polyethylene, polypropylene, or polyester coated with a fluorine-based release agent, a long-chain alkyl acrylate-based release agent, or the like. Can be protected.

The dicing die-bonding film in this invention selects the separation film designed arbitrarily above and below the wafer bonding layer 30 suitably, and peels and uses after dicing.

That is, the frame is pressed onto the wafer bonding layer 30 of the dicing die-bonding film, and then the frame is bonded and supported on the point-and-adhesive layer 21 and the point-adhesive reinforcement layer 22 based on the base material layer 10. To fix it. Uniform pressing is carried out in a general manner in which bubble removal and pressing are applied simultaneously, such as close pressure bonding. In the present invention, as a frame to be applied, a semiconductor wafer can be best applied, and this is diced onto a chip. Here, the broad frame may include a semiconductor wafer, a multilayer board, a package encapsulation module, and the like.

In the next step, the chipped frame is peeled from the point-adhesive reinforcement layer 22 together with the wafer bonding layer 30. The picked-up chip-shaped frame is adhered and fixed to the semiconductor element, which is the adherend, by a heat fusion process through the wafer bonding layer 30. As a related semiconductor element, a lead frame, a TAB film, a board | substrate, or the chip-shaped frame produced separately is mentioned. These to-be-adhered materials may be a melt-deformed to-be-adhered material which deform | transforms easily, and may be a non-deformable to-be-adhered material (semiconductor wafer etc.) which is difficult to deform | transform. As in the above description, the adherend is most suitable for handling by a semiconductor wafer.

In the case of using the thermosetting resin as the wafer bonding layer 30, the frame is adhered to the adherend by heat curing to increase the crosslinking degree, thereby improving heat resistance. In other words, the wafer bonding layer 30 is formed in a 'sandwich' shape, and the chipped frame is adhered to and adhered to an adherend such as a substrate or an element, thereby being transferred to a subsequent reflow process.

The wafer bonding layer 30 of the present invention is composed of an epoxy compound as the main material, and it is preferable to use a film-type thermosetting adhesive composed of an epoxy resin, a rubber resin, a catalyst, an additive, and the like.

 The wafer bonding layer 30 is 10 to 25% by weight acrylate resin, 10 to 30% by weight epoxy resin, 10 to 30% by weight phenolic resin, 5 to 20% by weight butadiene resin, lactone-graft acrylic It may consist of a composition comprising 0.5 to 15% by weight of the resin and 0.2 to 7% by weight of the curing catalyst.

The acrylate-based resin is an organic polymer material having a film forming ability, specifically, may be used polyacrylate or vinylurethane acrylate, the amount of use is in the range of 10 to 25% by weight, if the amount is less than 10% by weight of the film Insufficient forming ability and exceeding 25% by weight have problems in compatibility with epoxy / phenolic resins.

The epoxy resin and the phenol resin are adhesive components for thermosetting strength reinforcement, the epoxy resin may be used in the range of 10 to 30% by weight, phenolic resin 10 to 30% by weight. At this time, when the amount of the epoxy resin is less than 10% by weight, the strength is insufficient, and when the amount of the epoxy resin exceeds 30% by weight, the strength of the adhesive component itself is increased and the flexibility is greatly reduced. In addition, when the amount of the phenol-based resin is less than 10% by weight, the hardness is insufficient, and when it exceeds 30% by weight, the hardness increases as the degree of crosslinking increases, thereby greatly reducing the flexibility.

The butadiene-based resin is an elastic reinforcing resin, the amount of use is in the range of 5 to 20% by weight, if the amount is less than 5% by weight, the bending resistance is insufficient, and when it exceeds 20% by weight, the tensile strength is significantly reduced.

The lactone-graft acrylic resin is used as a resin for adhesive reinforcing, specifically, the vinyl lactone monomer is 0.3 to 3% by weight of the graft copolymerized acrylate resin or vinyl lactone monomer is 0.3 to 3% by weight The grafted copolymerized acrylic vinylurethane resin may be used alone or in combination, and various modified resins or oligomers such as amide-imide, etherimide, melamine, urea and nylon may be used together if necessary. The amount of lactone-grafted acrylic resin is in the range of 0.5 to 15% by weight. If the amount is less than 0.5% by weight, the adhesive strength with the lower surface of the adhesive layer 22 is insufficient. And partial aggregation occurs.

The curing catalyst is used in the range of 0.2 to 7% by weight, if the amount is less than 0.2% by weight it is difficult to harden completely, when the amount exceeds 7% by weight causes a change over time there is no storage stability.

Epoxy resins and phenolic resins used in the present invention, the molecular weight, distribution and epoxy equivalent weight of the properties, which also vary depending on the aliphatic and aromatic content flowability during processing, hardness and flexibility after curing For the complete reaction of the oxirane ring, the oxirane ring content and the hydroxyl group content ratio must be controlled.

The number average molecular weight of the epoxy resin is in the range of 1500 to 5000, but the molecular weight is 1500 or less, solubility in solvent and flexibility after curing is good, and when the molecular weight is 5000 or more, the solubility in solvent is sharply lowered, but the strength after curing is increased. Tend to.

On the other hand, the epoxy equivalent can be used in the range of 170 to 240 and 800 to 2000 to adjust the degree of crosslinking, the phenol-based resin may be utilized a novolak-type resin utilizing phenol or bisphenol. The number average molecular weight of the phenol-based resin is 1500 to 6000 ranges, and as described in the description of the epoxy-based resins, the small amount thereof is flexible, and the large amount thereof reinforces mechanical strength. The hydroxyl group value related to the curing reaction is in the range of 100 to 300, and the molar ratio in the range of 1.05 to 1.25 in relation to the epoxide content is designed to induce a complete crosslinking reaction so that the reaction does not occur even after curing.

Butadiene-based resin for elastic reinforcement used in the present invention utilizes a copolymer with an acrylonitrile resin, and preferably the sock end is carboxylated or epoxidized. At this time, the content of acrylonitrile is in the range of 15 to 41% by weight of the resin, if less than 15% by weight solubility in the solvent is greater than 41% by weight increases the polarity, there is a problem in compatibility with non-polar components .

Epoxy group-containing acrylic resins are made by radical reaction and contain epoxy groups in the side chain. In the curing reaction, a method of chemically mixing the compound through crosslinking is used, and less than 2% by weight is less effective. When used in excess of%, copolymerization of acrylic monomers is difficult due to steric hindrance of monomers, and compatibility is drastically lowered, resulting in mechanical property deterioration.

The lactone functional group utilized in the present invention has a very small cohesive energy unlike adhesive functional groups such as esters, ethers, epoxies, hydroxy, and the like, and therefore, acrylic resins containing these functional groups are used to control bonding strength with non-polar adherend surfaces. It may be helpful, but excessive use can lead to aggregation with functional groups of acids and bases, resulting in poor surface migration during the filming process of coating and drying. Existing methods described above use the same adhesive functional groups for both the point and the adhesive layer 20 and the wafer bonding layer 30 and adjust the adhesive force only by changing the content on the upper and lower surfaces, but in the present invention, the lactone functional group is newly added. By utilizing it, it was possible to satisfactorily adjust the adhesion in a smaller amount.

The thermosetting catalyst used in the present invention changes over time with good dispersibility by using a heat latent catalyst such as a microcapsule, salt, photocuring and thermosetting combination catalyst in addition to the melting point or the solubility method, in consideration of the aging of the catalyst. No catalyst material was selected. The thermosetting catalyst is stored in a storage state at about 4 ° C. after the formulation is prepared and used during the molding process, so that the curing of the formulation even at room temperature over time even during storage, unless it is a microencapsulated or adduct type catalyst. As the reaction proceeds, the flowability worsens, and as a result, the film adhesive does not play a role, and thus, a combination of Lewis acid, Lewis base, etc. other than the initial stage formulation is avoided. . However, although it may be utilized through the control of the melting point in preparation for the adhesion process temperature, it is attached to the condition that the solid particles should be refined for uniform curing reaction. Curing catalysts include amines having a melting point of 100 ° C. or higher, imidazoles, Lewis acid-amine adducts having a melting point of 70 to 140 ° C., amine-borate adducts, various amines, imidazoles , Adducts of alkylphosphine and phenolic novolac resins, various amines, imidazoles, alkylphosphines and various anhydrides (Nadic, trimellitic, pyromellitic, phthalic, etc.) and adducts of organic acids This can be utilized.

As a result, the lower surface of the wafer bonding layer 30 in the present invention exhibits a small point and adhesive force, and the support layer has a heat-resistant resin such as a polyester film that does not undergo thermal deformation even after instantaneous heating at 160 ° C. It also serves as a protective layer 40], which is coated on a polyolefin film base material solution to a certain thickness, dried to transfer to the support base layer 40, the wafer bonding layer (30). The wafer bonding protective layer 40 coated with the wafer bonding layer 30 has been described in the above section, and is coated with a point-and-adhesive formulation in a solution state on the support base layer 10 to a predetermined thickness and dried. The adhesive bond layer 21 is formed, and it contacts with the previously prepared point and adhesive reinforcement layer 22, and covers it. The former and the latter different film layers, that is, the point-adhesive layer 22 and the wafer bonding layer 30 are pressed and adhered at room temperature with respect to the interface to be in close contact, and are used as the dicing die-bonding film in the present invention. .

The dicing die-bonding film of the present invention, which is made as described above, first fixes the dicing die-bonding film having the lower surface of the support base layer 10 with a fixing ring to be applied to the dicing, and then wafer-bonds it. The wafer bonding protection layer 40 attached to the upper surface of the layer 30 is removed, and the semiconductor wafer to be diced is adhered and fixed thereon, followed by dicing, followed by the die bonding process, followed by die bonding. Can be finished.

Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited by the following Examples.

Examples 1-15

Next, a dicing die-bonding film was prepared through the component and solution coating method shown in Table 2.

First, vinyl chloride in which 15 parts by weight of the UV-curable monomer and oligomer mixture, 3 parts by weight of isocyanate primers and the like is coated on a polyolefin film based on 100 parts by weight of acrylic resin as a point-adhesive film material, and hardly any fishy is found after drying. The resin film was transferred to the support base layer 10 so that the acrylic point-adhesive layer 20 came on the support base layer 10 of the polyvinyl chloride resin. This point and adhesive layer 20 becomes a top and bottom multiple layers (point and adhesive layer 21 and point and adhesive reinforcement layer 22), and the adhesive force with the support base layer 10 is largely maintained, and the point and adhesive reinforcement layer 22 ) Was adjusted so as to maintain a relatively small adhesive force.

On the other hand, by coating and drying the epoxy-based adhesive compound solution on a high-density polyethylene film to form a wafer bonding layer 30, the upper surface of the bonding layer 30 as an interface, the wafer bonding protective layer 40 And then adhered to.

The support base layer 10, the point-adhesive layer 21, the point-adhesive reinforcement layer 22, and the wafer-bonding adhesive coating surface are combined on the top surface of the wafer protective layer 40, and are brought into close contact with each other. Substrate layer 10, dot-adhesive layer 21, dot-adhesive reinforcement layer 22, wafer bonding layer 30, wafer bonding protective layer 40 in order to be stacked in order to form a 'dicing die bond film' It was.

After the dicing die-bonding film is fixed using a ring frame for fixing, the wafer bonding protective layer 40 on the upper surface is removed, the semiconductor wafer is lowered, and the wafer bonding layer 30 is reduced-pressure-bonded. It was made to stick and fix by. Subsequently, dicing and pick-up were performed, and the pick-up rate and the burr state of the diced surface were observed. Subsequently, after irradiating UV from the lower surface, film peeling force was evaluated, and the temperature was raised to 60 degreeC, and die-adhesive force was evaluated.

The wafer bonding layer 30 on the lower surface of the semiconductor wafer was thermally cured at 160 ° C. for 1 hour, and the state of bridging and the bonding state of the adherend (element) were observed. Subsequently, PCT characteristics, glass transition temperature and CTE were measured.

Comparative Examples 1 to 15

Next, a dicing die-bonding film was prepared through the component and solution coating method shown in Table 1 below.

First, vinyl chloride in which 15% by weight of the UV-curable monomer and oligomer mixture, 3 parts by weight of isocyanate primers, etc. is coated on a polyolefin film based on 100 parts by weight of acrylic resin as a point-adhesive film material, and hardly any fishy is found after drying. The resin film was transferred to the support base layer 10 so that the acrylic point-adhesive layer 20 came on the support base layer 10 of the polyvinyl chloride resin. This point and adhesive layer 20 utilizes only the point and adhesive layer 21 which are lower surfaces, or utilizes the point and adhesive layer 22 outside the appropriate range as described above, and maintains the adhesive force with the support base layer 10 largely. The adhesive force between the adhesive layer 20 and the wafer bonding layer 30 is kept small.

On the other hand, by coating and drying the epoxy-based adhesive compound solution on a high-density polyethylene film to form a wafer bonding layer 30, the upper surface of the bonding layer 30 as an interface, the wafer bonding protective layer 40 And then adhered to.

The support base layer 10, the point-adhesive layer 20 (or the use of the point-adhesive reinforcement layer 22 without lactone grafts) and the wafer protective layer 40 are the top surfaces, and an adhesive coating surface for wafer bonding is combined. And the adhesive base layer 10, the point and adhesive layer 20 (or the lactone-grafted point and adhesive reinforcing layer 22 together), the wafer bonding layer 30, and the wafer bonding protective layer 40 It was configured to be stacked in order and made into a 'dicing die-bonding film'.

After the dicing die-bonding film is fixed by using a fixing ring frame, the wafer bonding protection layer 40 on the upper surface is removed, the semiconductor wafer is lowered, and the wafer bonding layer 30 is reduced-pressure-bonded. It was made to stick and fix by. Subsequently, dicing and pick-up were performed, and the pick-up rate and the burr state of the diced surface were observed. Subsequently, after irradiating UV from the lower surface, film peeling force was evaluated, and the temperature was raised to 60 degreeC, and die-adhesive force was evaluated.

The wafer bonding layer 30 on the lower surface of the semiconductor wafer was thermally cured at 160 ° C. for 1 hour, and the state of bridging and the bonding state of the adherend (element) were observed. Subsequently, PCT characteristics, glass transition temperature and CTE were measured.

As shown in Tables 1 and 2, in Examples 1 to 13, when the point-adhesive reinforcing layer 22 was used for the point-adhesive layer 20, the peeling force after irradiation was lower than the peeling force before UV irradiation. Relatively large decrease. On the other hand, the pick-up failure rate which is a criterion for the peel force determination between the point-adhesive reinforcing layer 22 and the wafer bonding layer 30 was not found within all the experimental conditions of the examples.

Die adhesion, PCT, thermal properties, etc. are related to the constituents of the wafer bonding layer 30. Overall, the die adhesion is related to the rubber content, and decreases as the rubber content increases. That is, in Table 2, the PCT for measuring the water resistance did not show any significant difference in the shear forces in the experimental conditions. This part is related to the composition of the wafer bonding layer 30 as described above. All of them were observed to show similar properties. The thermal properties showed that CTE increased slightly with increasing rubber content, while glass transition temperature decreased with increasing flexibility.

On the other hand, as shown in Comparative Examples 1 to 13 of Table 2, when the point-adhesive reinforcing layer 22 is not used for the point-adhesive layer 20 and if it is outside the limited range even if utilized, It was relatively high. Similarly to Examples 1 to 13, in Comparative Examples 1 to 13, the peeling force after irradiation was greatly reduced compared to the peeling force before UV irradiation, but it showed a tendency to decrease relatively. However, compared to the results of the Examples, the peeling force after UV irradiation was relatively high in Comparative Examples 10 to 12, and after dicing while being close to the peeling force between the wafer bonding layer 30 / point-adhesive layer 22, At the time of pick-up, it caused the defect. On the other hand, as described in the above embodiments, the die adhesion, PCT, thermal properties and the like are related to the components of the wafer bonding layer 30, the overall die adhesion is shown to be related to the rubber content, rubber content is increased The decrease was shown.

Likewise, PCT did not show a big difference in the experimental conditions. As in Examples 1 to 13, the thermal properties showed a slight increase in rubber content, while the glass transition temperature showed a tendency to decrease with increasing flexibility. Regarding wafer bonding, the results according to the evaluation of the embodiments are shown. In the dicing die bond adhesive, the physical properties between the point-adhesive layer 21, the point-adhesive reinforcement layer 22 and the wafer bonding layer 30 are relatively evaluated. Unaffected was observed.

As described above, according to the present invention, the point-adhesive layer 20 composed of the point-adhesive layer 21 and the point-adhesive reinforcement layer 22 is placed on the support base layer 10, and the wafer bonding layer is placed thereon. By constructing the dicing die-bonding film in which the 30 and the wafer bonding protective layer 40 are laminated | stacked, the interface which contact | connects the support base material layer 10, the adhesive agent layer 21, and the adhesive agent layer in the case of dicing, The interface between the point 21 and the adhesive reinforcing layer 22 is made to exhibit good bonding force, and the good peeling force can be maintained at the interface on the point and adhesive reinforcing layer 22 and the wafer bonding layer 30, thereby providing a wafer frame. During dicing, as much fixing as necessary is required. After dicing, the wafer bonding layer can pick up individual wafer chips closely adhered to the bottom surface, so that subsequent semiconductor wafer die bonding is very easy. There is an advantage to let.

Claims (7)

The support base layer 10, the point-adhesive layer 21 and the point-adhesive layer 20 formed of the point-adhesive reinforcement layer 22, the wafer bonding layer 30, and the wafer bonding protective layer 40 are sequentially stacked. Is composed, The peel force between the support base layer 10 and the point-adhesive layer 21 is in the range of 3 to 30 N / 20 mm (90 ° C., peel rate 300 mm / min), Dicing die bond film, characterized in that the peel force between the adhesive agent reinforcing layer 22 and the wafer bonding layer 30 ranges from 0.01 to 0.30 N / 20 mm (90 ° C., peeling rate 300 mm / min). . The method of claim 1, wherein the adhesive layer 21 is made of a single molecule or oligomer or a polymer resin or a mixture thereof comprising at least one adhesive functional group selected from ester, ether, epoxy and hydroxy. Dicing die-bonding film. The dicing die-bonding film according to claim 1, wherein the upper surface, or the upper surface, and the lower surface of the point-adhesive reinforcing layer (22) are copolymer resin layers in which a lactone monomer is graft-polymerized. The dicing die-bonding film of claim 3, wherein the lactone monomer is included in a range of 0.3 to 2 wt% in the copolymer resin. The method of claim 3, wherein the adhesive agent layer 22 is made of a multilayer film ① vinyl lactone-grafted polyethylene having a weight average molecular weight in the range of 5 to 300,000, Any selected from polyethylene, polypropylene, poly (ethylene-co-propylene), poly (ethylene-co-vinylacetate), poly [ethylene-co-acrylic (methacrylic) acid] and poly (ethylene-co-maleic anhydride) Mixtures comprising one or more resins; or ② vinyl lactone-grafted poly (ethylene-co-vinylacetate), At least one resin selected from poly [ethylene-co-acrylic (methacrylic) anhydride] and poly (ethylene-co-maleic anhydride) having a content of acrylic (methacrylic) or maleic anhydride in the range of 0.5 to 5% by weight; At least one resin selected from poly [ethylene-co-acrylic (methacrylic) acid] and poly (ethylene-co-maleic anhydride) having a content of acrylic acid (methacrylic) or maleic anhydride in the range of 10 to 40% by weight, respectively. A mixture consisting of; or Dicing die-bonding film, characterized in that the combination consisting of the ① mixture and ② the mixture. According to claim 1, wherein the wafer bonding layer 30 is 10 to 25% by weight of acrylate resin, 10 to 30% by weight epoxy resin, 10 to 30% by weight phenolic resin, 5 to 20% by weight butadiene resin And a film comprising a composition containing 0.5 to 15% by weight of lactone-grafted acrylic resin and 0.2 to 7% by weight of a curing catalyst. According to claim 6, wherein the lactone-grafted acrylic resin is an acrylic resin graft polymerized in the range of 0.3 to 3% by weight of vinyl lactone monomer, acrylic vinyl urethane graft polymerized in the range of 0.3 to 3% by weight of vinyl lactone monomer A dicing die-bonding film, which is either resin or a mixture thereof.

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