JP2012248607A - Die-bond dicing sheet and method for manufacturing semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a die-bond dicing sheet having a three-layer structure of a peeling base material an adhesive layer and a self-adhesive film, used for dividing a semiconductor wafer into individual pieces while suppressing peeling electrification in pickup, and a method for manufacturing a semiconductor device using the die-bond dicing sheet.SOLUTION: A die-bond dicing sheet comprises an adhesive film having one side on which a peeling base material, an adhesive layer and a tackifier layer are formed and has the tackifier layer formed on the adhesive layer side. In the die-bond dicing sheet, an antistatic layer is provided on at least one side of the adhesive layer. The antistatic layer preferably has a surface intrinsic resistance of 1×10Ω/sq. or less under an environment of 23°C and 50% RH.

Description

  The present invention relates to a die bond dicing sheet and a method for manufacturing a semiconductor device using the same.

  In recent years, with the development of electronic devices, the mounting density of electronic components has increased, and a new type of mounting method such as a semiconductor package in which semiconductor chips are stacked such as a multi-chip stacked package (hereinafter abbreviated as MCP). The thickness of semiconductor wafers used has been further reduced.

  In general, liquid or film adhesives are used as adhesive members used in conventional semiconductor mounting substrates. However, support members are being used as semiconductor devices become smaller and higher performance in recent years. In recent years, there has been a demand for miniaturization and densification, and in recent years, adhesive films that can be easily processed finely are used.

  This adhesive film is used in an individual piece bonding method or a wafer back surface bonding method. When manufacturing a semiconductor device using the former adhesive film of the individual piece pasting method, after cutting the reel-like adhesive film into individual pieces by cutting or punching, the individual pieces are adhered to the support member to form a support member with an adhesive film. A semiconductor device is manufactured by bonding a semiconductor element separated by a dicing process to the support member with an adhesive film to produce a support member with a semiconductor element, and then performing a wire bonding process, a sealing process, and the like as necessary. Will be obtained. However, in order to use the adhesive film of the above-mentioned individual sticking method, a dedicated assembly device that cuts out the adhesive film and adheres it to the support member is necessary, so compared with a method using a liquid adhesive such as silver paste. As a result, the manufacturing cost is high.

  On the other hand, when manufacturing a semiconductor device using an adhesive film of the latter wafer back surface application method, first, an adhesive film is applied to the back surface of the semiconductor wafer, and an adhesive film for fixing the semiconductor wafer is applied to the other surface of the adhesive film. After that, the semiconductor element is separated from the wafer by dicing, the separated semiconductor element with an adhesive film is peeled off from the pressure-sensitive adhesive layer and bonded to the support member, and the subsequent steps such as heating, curing, and wire bonding Through this process, a semiconductor device is obtained. This wafer back surface bonding type adhesive film joins the semiconductor element with the adhesive film to the support member, so there is no need for an apparatus for separating the adhesive film, and the conventional silver paste assembling apparatus is used as it is or with a hot platen. It can be used by modifying a part of the device such as adding. Therefore, it has been attracting attention as a method that can reduce the manufacturing cost relatively low among the assembling methods using the adhesive film.

  The pressure-sensitive adhesive film used together with the wafer back surface bonding type adhesive film is roughly classified into a pressure sensitive type and an ultraviolet curable type. The former pressure-sensitive adhesive film is usually one obtained by applying an adhesive to a polyvinyl chloride or polyolefin base film. This adhesive film is required to have sufficient adhesive strength so that each element does not scatter due to rotation of the dicing saw or laser irradiation when cutting in the dicing process, and it adheres without damaging the semiconductor element when bonded to the semiconductor support member. The adhesive strength is low enough to be peeled off at the interface between the film and the adhesive layer. However, since there was no pressure-sensitive adhesive film having sufficient two conflicting performances as described above, an operation of switching the adhesive film for each size and processing condition of the semiconductor element has been performed. Moreover, since the adhesive force needs to be controlled depending on the element size and processing conditions, the inventory management of the adhesive film is complicated. Furthermore, in recent years, especially as the capacity of CPUs and memories has increased, semiconductor elements tend to increase in size, and in products such as IC cards and memory cards, the memory used has become thinner. Yes. With the increase in size and thickness of these semiconductor elements, there have been problems such as cracking of the elements when peeling off at the interface between the adhesive layer of the adhesive film and the adhesive layer of the adhesive film.

  On the other hand, the latter UV curable pressure-sensitive adhesive film has a high adhesive strength during dicing, but has a low adhesive strength when irradiated with ultraviolet rays before the adhesive layer is peeled off from the adhesive layer. Therefore, it has been widely adopted since the problems of the pressure-sensitive adhesive film are improved.

  However, in the wafer back surface pasting method using the film adhesive, the process of applying the film adhesive to the semiconductor wafer and the process of applying the dicing tape to the film adhesive before dicing the semiconductor wafer. And two pasting steps are required. Therefore, in order to simplify this process, an adhesive film (die bond dicing sheet) having both functions is developed by bonding a film adhesive and a dicing tape together (see, for example, Patent Document 1). ). Such an adhesive film has, for example, a three-layer structure of release substrate / adhesive layer / adhesive film.

  Moreover, a method (so-called precut processing) in which such an adhesive film is processed in advance into the shape of a wafer constituting a semiconductor element is known (see, for example, Patent Document 2). Such pre-cut processing is a method in which a resin layer (an adhesive layer and an adhesive film) is punched in accordance with the shape of a wafer to be used, and a resin layer other than a portion to which the wafer is attached is peeled off.

  The adhesive film that has been subjected to the pre-cut processing has a structure as shown in FIG. An adhesive layer 2 is laminated on the peeling substrate 1, and an adhesive film 3 is further laminated thereon such that the peeling substrate 1 side becomes a surface having adhesiveness. The pressure-sensitive adhesive film 3 covers the adhesive layer 2 and is laminated so as to be in contact with the peeling substrate 1 around the adhesive layer 2, so that when the semiconductor wafer is diced, The adhesive film 3 can be fixed by affixing the adhesive film 3 to the outer peripheral wafer ring.

  When performing such pre-cut processing, the above-mentioned adhesive film is generally pre-cut in a film adhesive so that the adhesive layer matches the shape of the wafer, and bonded to the dicing tape, and then the dicing tape is applied to the dicing tape. It is manufactured by applying a pre-cut process in accordance with the wafer ring shape, or by bonding a dicing tape pre-cut into a wafer ring shape in advance with a pre-cut film adhesive.

JP 7-45557 A Japanese Utility Model Publication No. 6-18383

Conventionally, an adhesive film for a semiconductor is cured completely by pasting the adhesive film on a semiconductor wafer, separating it by dicing, laminating it on a substrate, bonding wires, and molding with a sealing material. However, as the thickness of the wafer becomes thinner, the circuit may be divided into individual pieces, and the circuit may be short-circuited due to separation charging when the adhesive film is separated from the pressure-sensitive adhesive layer.
The present invention relates to a die bond dicing sheet in which a semiconductor wafer is separated into pieces using a die bond dicing sheet having a three-layer structure of a release substrate / adhesive layer / adhesive film, and the peeling charge during pick-up is suppressed, and the use thereof The present invention provides a method for manufacturing a semiconductor device.

The present invention provides [1] a die bond dicing sheet comprising a pressure-sensitive adhesive film having a release substrate, an adhesive layer, and a pressure-sensitive adhesive layer formed on one side, wherein the pressure-sensitive adhesive layer is on the side of the adhesive layer. The present invention relates to a die bond dicing sheet in which an antistatic layer is provided on either side of an adhesive layer.
The present invention also relates to [2] the die bond dicing sheet according to the above [1], wherein the antistatic layer has a surface resistivity of 1 × 10 ¹² Ω / □ or less in an environment of 23 ° C. and 50% RH. .
In the present invention, [3] the adhesive layer contains (A) a high molecular weight component having a crosslinkable functional group, (B) a polyfunctional epoxy resin, (C) a phenol resin (D) inorganic fine particles, ) Component has a weight average molecular weight of 100,000 to 1,000,000, a glass transition temperature of −50 ° C. to 50 ° C., and (A) :( B) :( C) in mass ratio (A) :( B): (C) = 40 to 70: 5 to 25: 5 to 25 to 25, and the component (D) is 5 to 100 parts by mass with respect to 100 parts by mass in total of (A), (B), and (C). It is related with the die-bonding dicing sheet as described in said [1] or [2].
Moreover, this invention is the die-bonding dicing sheet as described in any one of [4] said [1]-[3], peels the laminated body which consists of an adhesive bond layer and an adhesive film from a peeling base material, The said lamination | stacking A step of attaching a body to the semiconductor wafer from the surface on the adhesive layer side to obtain a semiconductor wafer with a laminate, and dicing the semiconductor wafer with a laminate to the interface between the adhesive layer and the adhesive film A dicing step of cutting the semiconductor wafer into semiconductor elements of a predetermined size, and reducing the adhesive force of the adhesive film to the adhesive layer by irradiating the laminate with high energy rays, Picking up the semiconductor element from the film together with the adhesive layer to obtain a semiconductor element with an adhesive layer; and And a bonding step of bonding the semiconductor element to an adherend through the adhesive layer.
The present invention also relates to [5] The method for manufacturing a semiconductor device according to [4], wherein the adherend is a support member for mounting a semiconductor element or another semiconductor element.

  The adhesive layer used in the present invention contains the thermosetting resin composed of the components (A), (B), and (C) and the inorganic fine particles of the component (D) in the above-mentioned specific ratio, and is thermosetting. By containing the above components (A) to (C) as the resin at the specific ratio, excellent adhesive strength can be expressed while having a low melt viscosity. Before curing, it can sufficiently bury the unevenness of support members such as wiring boards and semiconductor chips due to good fluidity, and can exhibit high adhesion strength to support members such as organic substrates and silicon chips after curing Therefore, it is possible to improve the connection reliability of the mounting board.

  Further, according to the adhesive layer used in the present invention, the unevenness of the support member such as a substrate or the semiconductor chip can be sufficiently embedded only by pressure mounting at a low temperature (in particular, 100 to 120 ° C. or less).

  According to the die bond dicing sheet of the present invention, when the die bond dicing sheet is unrolled or peeled off, and the adhesive layer is peeled off from the adhesive layer, the peeling charge can be suppressed, and the circuit due to the peeling charge can be suppressed. Short circuit can be prevented.

(A) is a top view which shows typically an example of the die-bonding dicing sheet of this invention, (b) is XX end elevation of (a). (A)-(f) is a series of process drawings which show 1st Embodiment of the manufacturing method of a die-bonding dicing sheet. (A)-(g) is a series of process drawings which shows 2nd Embodiment of the manufacturing method of a die-bonding dicing sheet. (A)-(c) is a series of process drawings which perform the operation | work which affixes the laminated body in a die-bonding dicing sheet to a semiconductor wafer. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as the case may be. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Note that the dimensional ratio in each drawing is exaggerated for the sake of explanation, and does not necessarily match the actual dimensional ratio.

  In the present invention, in order to prevent the electrostatic charge of the die bond dicing sheet, the pressure-sensitive adhesive film having the release substrate, the adhesive layer, and the pressure-sensitive adhesive layer formed on one side is arranged in this order, and the pressure-sensitive adhesive layer is on the adhesive layer side. The formed die bond dicing sheet is characterized in that an antistatic layer is provided at least on either side of the adhesive layer. That is, the antistatic layer is provided between the release substrate and the adhesive layer, between the adhesive layer and the adhesive layer, between the release substrate and the adhesive layer, and between the adhesive layer and the adhesive layer. By forming the antistatic layer, the roll of the die-bonded dicing sheet wound around the core tube suppresses the static electricity of the roll itself. The laminated die-bonded dicing sheet is laminated to the wafer, or when attached to the dicing machine, the adsorption of dust and foreign matter in the atmosphere is suppressed, and the fine powder of the element generated by the rotation of the dicing saw or laser irradiation is adsorbed As a result, an effect of improving the connection reliability without interposing dust or foreign matter at the interface between the element and the adhesive layer is also exhibited.

Antistatic agents used in the antistatic layer include, as surfactants, cationic surfactants, nonionic surfactants, anionic surfactants, and various conductive resins, various conductive agent-dispersed resins, and quaternary ammonium. Examples thereof include salt-containing polymers, carboxylate-containing polymers, silicate compounds, polythiophene derivatives, and polyaniline derivatives.
Examples of the cationic surfactant include quaternary ammonium salts, pyridinium salts, and various cationic compounds having a cationic group such as primary to tertiary amino groups. Fatty acid amine salts and quaternary ammonium salts thereof, aromatics Quaternary ammonium salts, heterocyclic quaternary ammonium salts, etc. Primary, secondary, tertiary amine inorganic acids or organic acid salts, aliphatic quaternary ammonium salts, benzalkonium chloride, benzethonium chloride, alkyl Examples include pyridinium salts and imidazolinium salts.

  Nonionic surfactants are amino alcohol-based, glycerin-based, polyethylene glycol-based and other nonionic compounds such as ether type, ester ether type, ester type, and nitrogen-containing type. Ethylene secondary alcohol ether, polyoxyethylene alkylphenyl ether, polyoxyethylene sterol ether, polyoxyethylene lanolin derivative, ethylene oxide derivative of alkylphenol formalin condensate, polyoxyethylene polyoxypropylene block copolymer, polyoxyethylene polyoxypropylene alkyl Ether, polyoxyethylene glycerin fatty acid ester, polyoxyethylene castor oil and hydrogenated castor oil, polyoxyethylene sorbitan fatty acid ester , Polyoxyethylene sorbitol fatty acid ester, polyethylene glycol fatty acid ester, ethylene glycol fatty acid ester, glycerin fatty acid ester, polyglycerin fatty acid ester, sorbitan fatty acid ester, propylene glycol fatty acid ester, sucrose fatty acid ester, fatty acid alkanolamide, polyoxyethylene fatty acid amide And polyoxyethylene alkylamine.

  Anionic surfactants are anionic compounds having anionic groups such as sulfonate groups, sulfate ester bases, phosphate ester bases, phosphonate bases, carboxylates, sulfonates, sulfate esters, phosphate esters Salt, fatty acid soap, N-acyl acid and its salt, polyoxyethylene alkyl ether carboxylate, acylated peptide, alkylbenzene sulfonate, alkyl naphthalene sulfonate, salt formalin polycondensate of naphthalene sulfonate , Melamine sulfonic acid salt formalin polycondensate, dialkyl sulfosuccinic acid ester salt, sulfosuccinic acid alkyl disalt, polyoxyethylene alkyl sulfosuccinic acid disalt, alkyl sulfoacetate, α-olefin sulphonate, N-acyl-N- Methyl taurine sodium salt Dimethyl-5-sulfoisophthalate sodium salt, sulfated oil, higher alcohol sulfate ester, secondary higher alcohol sulfate ester, polyoxyethylene alkyl ether sulfate, secondary higher alcohol ethoxy sulfate, polyoxyethylene fatty acid alkanol Amide sulfate, polyoxyethylene alkylphenyl ether sulfate, monoglyculate, fatty acid alkylol amide sulfate ester salt, polyoxyethylene alkyl ether phosphate, polyoxyethylene alkylphenyl ether phosphate, alkyl phosphate, etc. Illustrated.

Examples include organometallic compounds such as alkoxides of silicon, tin and titanium, and metal chelate compounds such as acetylacetonate salts thereof, and compounds obtained by increasing the molecular weight of the compounds listed above. In addition, a monomer or oligomer having a tertiary amino group, a quaternary ammonium group, or a metal chelate portion and polymerizable by ionizing radiation, or an organometallic compound such as a coupling agent having a functional group, etc. Polymerizable compounds can also be used as antistatic agents.
Examples of organometallic compounds such as silicon alkoxides include ethyl silicate (tetraethylsilane), propyl silicate, butyl silicate, methoxyethoxy silicate, oligomers of these silicates, and the like.
Moreover, electroconductive fine particles are mentioned. Specific examples of the conductive fine particles include those made of metal oxides. Examples of such metal oxides include ZnO, CeO ₂ , Sb ₂ O ₂ , Sb ₂ O ₃ , Sb ₂ O ₅ , and SnO _2. , Indium tin oxide, In ₂ O ₃ , Al ₂ O ₃ , antimony-doped tin oxide, aluminum-doped zinc oxide, and the like. When the conductive fine particles are used on the surface where the circuit exists, the conductive particles shoot between the circuits when they exist between the circuits. Therefore, the conductive fine particles have a particle size smaller than that between the circuits and have a size of 1 micron or less, preferably The average particle size is 0.1 nm to 0.1 μm.

Moreover, although it is effective when used for the surface where a circuit does not exist, a π-conjugated conductive polymer can be mentioned. The π-conjugated conductive polymer is not particularly limited as long as the main chain is a polymer composed of π-conjugated system. For example, aliphatic conjugated polyacetylene, polyacene, polyazulene, aromatic conjugated polyphenylene, Heterocyclic conjugated polypyrrole, polythiophene, polyisothianaphthene, heteroatom-containing polyaniline, polythienylene vinylene, mixed conjugated poly (phenylene vinylene), conjugated systems with multiple conjugated chains in the molecule Selected from the group consisting of a double-chain conjugated system, a derivative of these conductive polymers, and a conductive complex that is a polymer obtained by grafting or block-copolymerizing these conjugated polymer chains to a saturated polymer. At least one can be mentioned. Among these, it is more preferable to use a conjugated conductive polymer such as polythiophene, polyaniline, and polypyrrole. For the purpose of improving conductivity and improving antistatic performance, anions such as organic sulfonic acid and iron chloride can be added as a dopant (electron donor) and used as a composite.
The antistatic layer is composed of the above-mentioned antistatic agent, organometallic compound, metal chelate compound, polymerizable compound, conductive fine particles, conductive polymer, etc. alone or mixed with a resin (binder) having other film forming ability. Can be used. The antistatic layer is preferably formed so that the surface specific resistance value is 1 × 10 ¹² Ω / □ or less. Since the antistatic layer tends to reduce the adhesive strength of the adhesive layer, it is important to select a material that does not lower the adhesive strength of the adhesive layer as much as possible and to make it as small as possible.
The antistatic layer is preferably formed so as to have a surface resistivity of 1 × 10 ¹² Ω / □ or less in an environment of 23 ° C. and 50% RH. The surface resistivity is measured by measuring the surface provided with the antistatic layer.

From the viewpoint of workability, the antistatic layer may be formed by a method such as coating on the adhesive layer by mixing such an antistatic agent alone or in a resin having other film forming ability. preferable. As a coating method, a known method may be carried out. Specific examples include gravure coating, wire bar coating, air knife coating, doctor knife coating and the like. Further, the coating method is not particularly required to be on a film, and may be applied to the above-mentioned pressure-sensitive adhesive layer by spraying or the like. The thickness of the antistatic layer is not particularly limited, and the coating amount may be selected in consideration of the antistatic performance. As the antistatic performance suitable for the antistatic layer according to the present invention, the surface specific resistance value in an environment of 23 ° C. and 50% RH is preferably 1 × 10 ¹² Ω / □ or less, more preferably 1 × 10 ^9. Ω / □ or less.

The die bond dicing sheet of the present invention is composed of a pressure-sensitive adhesive film in which a release substrate, an adhesive layer, and a pressure-sensitive adhesive layer are formed on one side, and the pressure-sensitive adhesive layer is formed on the side of the adhesive layer.
There is no restriction | limiting in particular in a peeling base material, For example, polyester films, such as a polyethylene terephthalate film which is a resin film, a polypropylene film, a polyimide film, a polyetherimide film, a polyether naphthalate film, a methylpentene film etc. are mentioned.
First, the adhesive layer used in the present invention will be described.

  The adhesive layer used in the present invention is an adhesive composition containing a thermosetting resin and inorganic fine particles (filler), and the blending ratio of the inorganic fine particles is 5 to 100 with respect to 100 parts by mass of the thermosetting resin. A high molecular weight component having a mass part and (A) a crosslinkable functional group as a thermosetting resin, a weight average molecular weight of 100,000 to 1,000,000 and a glass transition temperature of -50 ° C to 50 ° C. , (B) a polyfunctional epoxy resin and (C) a phenol resin in a mass ratio of (A) :( B) :( C) = 40 to 70: 5 to 25: 5 to 25 preferable.

  Examples of the high molecular weight component (A) include polyimide resins having crosslinkable functional groups such as epoxy groups, alcoholic or phenolic hydroxyl groups, and carboxyl groups, (meth) acrylic resins, urethane resins, polyphenylene ether resins, and polyetherimide resins. , Phenoxy resin, modified polyphenylene ether resin, and the like. However, it is not limited to these.

  As the high molecular weight component (A) used in the present invention, an epoxy group-containing compound (meta) having a weight average molecular weight of 100,000 to 1,000,000 obtained by polymerizing a monomer containing a functional monomer such as glycidyl acrylate or glycidyl methacrylate is used. ) Acrylic copolymer is preferred. Furthermore, as the (meth) acrylic copolymer, a (meth) acrylic acid ester copolymer, acrylic rubber or the like can be used, and acrylic rubber is more preferable. Acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like.

  The glass transition temperature Tg of the high molecular weight component (A) is preferably in the range of −50 ° C. to 50 ° C. When the Tg of the high molecular weight component exceeds 50 ° C., the flexibility of the adhesive layer becomes too low, and it tends to be difficult to obtain sufficient adhesion when laminating to a wafer. On the other hand, if the Tg of the high molecular weight component is less than −50 ° C., the flexibility of the adhesive layer becomes too high, so that the adhesive layer is difficult to cut during semiconductor wafer dicing, and the dicing property deteriorates due to the generation of burrs. There is a case.

  Moreover, although the weight average molecular weight of a high molecular weight component (A) is preferable in the range of 100,000-1 million, Preferably it is 200,000 or more and 800,000 or less. When the weight average molecular weight of the high molecular weight component is less than 200,000, the film formability of the adhesive layer may be deteriorated, or the adhesive force and heat resistance of the adhesive layer may be reduced. If it exceeds 800,000, the fluidity of the uncured adhesive layer may decrease.

  In the present invention, the weight average molecular weight means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.

  In addition, the high molecular weight component (A) used in the present invention is such that the adhesive layer is easily cut during semiconductor wafer dicing, and resin waste is less likely to be generated, the fluidity of the uncured adhesive sheet is increased, and From the viewpoint of high adhesive strength and heat resistance, those having a Tg of −20 ° C. to 40 ° C. and a weight average molecular weight of 100,000 to 900,000 are preferable, and the Tg is −10 ° C. to 40 ° C. and weight. Those having an average molecular weight of 200,000 to 800,000 are more preferable.

  The (B) component polyfunctional epoxy resin preferably has a molecular weight of 500 or more, and is not particularly limited as long as it has an adhesive action when cured. Among them, a resin that cures at 120 ° C. or less is preferable. For example, a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin can be used. Commonly known materials such as a glycidylamine type epoxy resin, a heterocyclic ring-containing epoxy resin or an alicyclic epoxy resin can be applied.

  The polyfunctional epoxy resin (B) preferably contains an epoxy resin represented by the following general formula (1) and having a molecular weight of 800 or more.

一般式（１）中、Ｒ^１は水素原子、ハロゲン原子、直鎖状、分岐状若しくは環状のアルキル基、アラルキル基、アルケニル基、水酸基、又は、アリール基を示し、ｌは１〜３の整数を示し、ｍは２〜４の整数を示す。

In general formula (1), R ¹ represents a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group, an aralkyl group, an alkenyl group, a hydroxyl group, or an aryl group, and l is an integer of 1 to 3. M represents an integer of 2-4.

  In addition, the polyfunctional epoxy resin represented by the general formula (1) and having a molecular weight of 800 or more has a water absorption of 2% by mass or less after being put into a constant temperature and humidity chamber at 85 ° C. and 85% RH for 48 hours. Those having a heating mass reduction rate (heating rate: 5 ° C./min, atmosphere: nitrogen) at 350 ° C. measured by a mass spectrometer (TGA) of less than 5% by mass can be preferably used.

  The adhesive layer preferably contains a polyfunctional epoxy resin having a molecular weight of 500 or more as an essential component. From the viewpoint of further improving the heat resistance of the cured product, the adhesive layer is represented by the general formula (1) and has a molecular weight of 800 to 3000. It is particularly preferable that a polyfunctional epoxy resin is contained.

  In the adhesive layer used in the present invention, an epoxy resin having a molecular weight of less than 500 is used as an epoxy resin other than the polyfunctional epoxy resin (B) having a molecular weight of 500 or more from the viewpoint of enhancing the flexibility of the film in the B-stage state. Is further preferably contained, and it is more preferred that an epoxy resin having a molecular weight of 400 or less is further contained. As such an epoxy resin, a bifunctional epoxy resin such as bisphenol A type or bisphenol F type epoxy resin is preferably used.

  The adhesive layer used in the present invention preferably contains a phenol resin represented by the following general formula (2) as the phenol resin (C).

一般式（２）中、Ｒ^２は水素原子、ハロゲン原子、直鎖状、分岐状若しくは環状のアルキル基、アラルキル基、アルケニル基、水酸基、又は、アリール基を示し、ｑは１〜３の整数を示し、繰り返し単位の数を示すｐは１〜５０の範囲の整数を示す。

In General Formula (2), R ² represents a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group, an aralkyl group, an alkenyl group, a hydroxyl group, or an aryl group, and q is an integer of 1 to 3. P which shows the number of repeating units shows the integer of the range of 1-50.

  Further, the phenol resin represented by the general formula (2) has a water absorption rate of 2% by mass or less after being put in a constant temperature and humidity chamber of 85 ° C. and 85% RH for 48 hours, and is measured by a thermal mass spectrometer (TGA). The measured heating mass reduction rate at 350 ° C. (temperature increase rate: 5 ° C./min, atmosphere: nitrogen) is preferably less than 5% by mass.

  The blending ratio of the epoxy resin and the phenol resin in the adhesive layer used in the present invention is set so that the equivalent ratio of the epoxy equivalent and the hydroxyl equivalent is 0.70 / 0.30 to 0.30 / 0.70. Is preferable, and is set to be 0.65 / 0.35 to 0.35 / 0.65, more preferably set to be 0.60 / 0.40 to 0.40 / 0.60. It is more preferable to set it to 0.60 / 0.40 to 0.50 / 0.50. When the equivalent ratio of the epoxy equivalent and the hydroxyl equivalent is outside the above range, the curability of the adhesive layer is inferior, or the viscosity of the uncured adhesive layer is increased and the fluidity tends to be inferior.

  The adhesive layer used in the present invention preferably contains inorganic fine particles (filler) as the component (D), which improves the dicing property of the adhesive layer in the B-stage state and improves the handling property of the adhesive layer. It is possible to improve, improve thermal conductivity, adjust melt viscosity, impart thixotropic properties, and improve adhesion.

  The inorganic fine particles (filler) used in the present invention are preferably inorganic fillers. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, and boron nitride. Crystalline silica, amorphous silica, antimony oxide, and the like can be used. These can be used alone or in combination of two or more.

  Of the above inorganic fillers, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferably used from the viewpoint of improving thermal conductivity. In terms of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica It is preferable to use amorphous silica or the like. From the viewpoint of improving dicing properties, it is preferable to use alumina or silica.

  (D) The content ratio of the inorganic fine particles is that the dicing property of the adhesive layer is improved, the storage elastic modulus after curing of the adhesive layer is 20 to 1000 MPa at 170 ° C., and the wire bonding property is improved. It is necessary that it is 5 to 100 parts by mass with respect to a total of 100 parts by mass of (A), (B) and (C), and further preferably 35 to 100 parts by mass.

  If the content of inorganic fine particles is too large, it tends to cause deterioration of film moldability, decrease in fluidity of the uncured adhesive layer, excessive increase in storage elastic modulus of adhesive, and decrease in adhesive strength. The content of is more preferably 80 parts by mass or less with respect to 100 parts by mass of the thermosetting resin (total of (A), (B), (C)). On the other hand, if the content of the inorganic fine particles is small, resin burrs are likely to occur during semiconductor wafer dicing, and the adhesive force tends to decrease. Therefore, the content of the inorganic fine particles is determined by the thermosetting resin ((A), The total of (B) and (C)) is more preferably 35 parts by mass or more with respect to 100 parts by mass.

  The adhesive layer used in the present invention preferably contains two or more fillers having different average particle diameters as the inorganic fine particles. In this case, compared to the case where a single filler is used, it becomes easy to prevent the viscosity increase or decrease of the raw material mixture before film formation, and it becomes easy to obtain good film formability, and the adhesive layer It becomes easy to obtain excellent adhesive strength after curing.

  Moreover, the adhesive layer used by this invention is a 1st filler in which the average particle diameter exists in the range of 0.1-1.0 micrometer, and the average of a primary particle diameter from a viewpoint which acquires said effect more reliably. It is preferable that the 2nd filler which has a particle size in the range of 0.005-0.03 micrometer is included. Further, a dispersion in which the first filler is dispersed in cyclohexanone by bead mill treatment is dropped into acetone, and the average particle size in the dispersion of the first filler measured using this is 0.1 to 1. It is preferably 0 μm. Moreover, it is preferable that the average particle diameter of the dispersion liquid of the 2nd filler measured similarly is 0.05-0.3 micrometer.

  Furthermore, the adhesive layer used in the present invention has an average particle size in the range of 0.1 to 1.0 μm and 99% or more of particles having a particle size of 0.1 from the viewpoint of more reliably obtaining the above effect. The first filler distributed in the range of ˜1.0 μm, and the average primary particle size is in the range of 0.005 to 0.03 μm and 99% or more of the particles have a particle size of 0.005. It is preferable that the 2nd filler distributed in the range of 0.1 micrometer is included.

  Moreover, it is preferable that the adhesive bond layer used by this invention further contains the thermopolymerizable compound which becomes high molecular weight by a polymerization reaction at 150 degreeC or more.

  Examples of the thermopolymerizable compound that increases in molecular weight by a polymerization reaction at 150 ° C. or higher include a polyfunctional (meth) acrylate monomer that increases in molecular weight when heated at high temperature in the presence of oxygen, manufactured by Nippon Kayaku Co., Ltd. KAYARAD DPHA (dipentaerythritol hexaacrylate) or the like can be used.

  The content rate of the said thermopolymerizable compound in the adhesive bond layer used by this invention is 3-10 mass parts with respect to 100 mass parts of thermosetting resins (total of (A), (B), (C)). It is preferable. If the content is too high, the stickiness of the uncured adhesive layer tends to increase.

  A curing accelerator may be further added to the adhesive layer. There is no restriction | limiting in particular as a hardening accelerator, For example, imidazole etc. are mentioned. Specific examples include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, and the like. Or in combination of two or more. These curing accelerators may be microcapsule type latent curing agents. Examples of these latent curing agents include those manufactured by Asahi Kasei Epoxy Corporation, trade name: NOVACURE HX-3941 and the like.

  The addition amount of the curing accelerator is preferably 10 parts by mass or less, and more preferably 5 parts by mass or less with respect to 100 parts by mass in total of (A), (B), and (C). When this addition amount exceeds 5 parts by mass, the storage stability tends to decrease.

  In addition, various coupling agents can be added to the adhesive layer in order to improve interfacial bonding between different materials. Examples of the coupling agent include silane-based, titanium-based, and aluminum-based, and among them, a silane-based coupling agent is preferable because it is highly effective.

  It is preferable that the usage-amount of the said coupling agent shall be 0.01-10 mass% on the basis of the whole quantity of an adhesive bond layer from the surface of the effect, heat resistance, and cost.

  Furthermore, an ion scavenger can be added to the adhesive layer in order to adsorb ionic impurities and improve insulation reliability during moisture absorption. Such an ion scavenger is not particularly limited. For example, a triazine thiol compound, a bisphenol-based reducing agent, etc., a compound known as a copper damage inhibitor to prevent copper from being ionized and dissolved, a zirconium-based compound, Examples include inorganic ion adsorbents such as antimony bismuth-based magnesium aluminum compounds.

  The amount of the ion scavenger used is preferably 0.1 to 10% by mass based on the total amount of the adhesive layer from the viewpoints of the effect of addition, heat resistance, cost, and the like.

  In addition, the adhesive layer used in the present invention is formed into a circuit on an organic substrate (for example, copper-clad laminate “E-697FG” (manufactured by Hitachi Chemical Co., Ltd., 400 μm thickness)), and resist ink “AUS308” (solar ink manufacturing) More preferably, the adhesive strength after curing with respect to those coated with (made by Co., Ltd.) is 1.0 MPa or more.

  The die bond dicing sheet can be produced by the following method, for example. First, each component constituting the above-mentioned adhesive layer is mixed and kneaded in an organic solvent to prepare a varnish, this varnish layer is formed on a release substrate, and dried by heating to form an adhesive layer. Obtainable. Moreover, it is good also as an adhesive sheet for semiconductors which removes a peeling base material after drying a varnish layer, and is comprised only from an adhesive bond layer. The above mixing and kneading can be carried out by appropriately combining dispersers such as ordinary stirrers, crackers, three rolls, and ball mills. The heating and drying conditions are not particularly limited as long as the used solvent is sufficiently volatilized, but the heating is usually performed at 60 to 200 ° C. for 0.1 to 90 minutes.

  The organic solvent used for the preparation of the varnish is not particularly limited as long as the material can be uniformly dissolved, kneaded or dispersed, and conventionally known ones can be used. Examples of such a solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.

  The thickness of the adhesive layer is preferably 10 to 250 μm in order to fill the unevenness of the wiring circuit on the substrate. If the thickness is less than 10 μm, it is difficult to obtain sufficient filling of the unevenness, and the stress relaxation effect and adhesiveness tend to be reduced. If the thickness is more than 250 μm, it is not economical and the semiconductor device is small. It tends to be difficult to respond to the demands for making it easier. Furthermore, the thickness of the adhesive layer is preferably 20 to 100 μm, more preferably 20 to 40 μm, from the viewpoint that sufficient adhesiveness can be obtained and the semiconductor device can be made thin.

  From the viewpoint of excellent dicing properties, the storage elastic modulus at 35 ° C. before curing of the adhesive layer (B stage state) is preferably 200 to 6000 MPa. Furthermore, the storage elastic modulus is more preferably 200 to 3000 MPa in terms of excellent dicing properties and excellent adhesion to a semiconductor wafer.

  Further, from the viewpoint of obtaining good wire bonding properties, the storage elastic modulus at 170 ° C. after curing of the adhesive layer (C stage state) is preferably 20 to 1000 MPa.

  The storage elastic modulus of the adhesive layer was measured using a dynamic viscoelasticity measuring device (“Rheogel-E4000” manufactured by UBM), sample size: length 20 mm, width 4 mm, temperature range: −30 to 200 ° C., temperature rise. It is measured under the measurement conditions of speed 3 ° C./min, tensile mode, 10 Hz, and automatic static load.

  Moreover, it is more preferable that the adhesive strength with respect to the organic substrate after hardening of an adhesive bond layer is 1 Mpa or more. This adhesive strength means a value measured by the following procedure. First, the adhesive layer is attached to a semiconductor wafer having a thickness of 400 μm at 60 ° C. and diced to 5.0 mm square. The singulated sample is pressure-bonded on a substrate coated with resist AUS308 for 5 seconds under the conditions of a temperature of 120 ° C. and a load of 250 gf. Next, the substrate to which the sample has been pressure-bonded is cured by step cure at 120 ° C. for 1 hour and 170 ° C. for 1 hour, and the die shear strength at 250 ° C. is measured, which is defined as the adhesive strength.

  The adhesive layer used in the present invention is provided on a conventionally known dicing tape to obtain a die bond dicing sheet (dicing / die bonding integrated adhesive sheet). In this case, since the laminating process on the semiconductor wafer is performed only once, the work can be made more efficient.

  The dicing tape used in the present embodiment is an adhesive film having an adhesive layer formed on one side. Examples of the film include a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, and a polymethylpentene film. And a plastic film such as a polyimide film. In addition, these plastic films may be subjected to surface treatment such as primer application, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as necessary.

  An adhesive layer is provided on one side of the plastic film described above. This pressure-sensitive adhesive layer can be formed by applying and drying a resin composition having an appropriate tack strength obtained by adjusting the ratio of the liquid component and the Tg of the high molecular weight component.

  When the die bond dicing sheet is used for manufacturing a semiconductor device, it is preferable that the adhesive layer has an adhesive force that prevents the semiconductor elements from scattering during dicing, and can be easily peeled off from the dicing tape during pickup. For example, if the adhesive layer is too sticky, picking up may be difficult. Therefore, it is preferable to appropriately adjust the tack strength of the adhesive layer. As its method, the adhesive strength and tack strength tend to increase when the flow of the adhesive layer at room temperature increases, while the adhesive strength and tack strength tend to decrease when the flow decreases. do it. Specifically, to increase the flow, for example, there are methods such as increasing the plasticizer content and increasing the tackifier content. Conversely, in order to reduce the flow, the content of the compound may be reduced. Examples of the plasticizer include monofunctional acrylic monomers, monofunctional epoxy resins, liquid epoxy resins, acrylic resins, and epoxy-based so-called diluents.

  As a method for providing an adhesive layer on a dicing tape, in addition to printing, a method in which a pre-made adhesive layer is pressed on a dicing tape and hot roll laminating can be mentioned. A method of providing an adhesive layer by hot roll lamination is preferred.

  The film thickness of the dicing tape is not particularly limited, and is determined based on the knowledge of a person skilled in the art as appropriate depending on the film thickness of the adhesive layer and the use of the die bond dicing sheet. Is preferably 60 to 150 μm, more preferably 70 to 130 μm.

  The die bond dicing sheet used in the present invention is, for example, a method of distributing raw materials such as varnish for partially forming the adhesive layer 2 in advance when the adhesive layer 2 is applied to the release substrate 1, It can be formed using a method such as masking the release substrate 1 and applying the raw material such as the varnish to a part other than the mask portion. It is preferable to form the adhesive layer 2 on the entire surface of the substrate by a coating method and perform unnecessary punching to remove unnecessary portions. Moreover, as a method of partially forming the adhesive film 3, a method of removing unnecessary portions by punching in the same manner as described above is preferable.

  FIGS. 2A to 2F are a series of process diagrams showing a first embodiment of a method for manufacturing a die-bonded dicing sheet. In the manufacturing method of the die bond dicing sheet concerning 1st Embodiment, as shown to Fig.2 (a), the adhesive bond layer 2 is first laminated | stacked on the whole surface on the peeling base material 1 (1st lamination process). Next, as shown in FIG. 2 (b), the mold 5 or a member corresponding thereto is used to reach the release substrate 1 from the surface F1 on the opposite side of the adhesive layer 2 that is in contact with the release substrate 1. Incision is made until a predetermined shape is punched (first cutting step). After that, as shown in FIG. 2 (c), the unnecessary portion 6 of the punched adhesive layer 2 is removed, and as shown in FIG. 2 (d), the adhesive layer 2 having a predetermined planar shape and And a support adhesive layer 22 disposed on the outside thereof. Next, as shown in FIGS. 2 (e) and 2 (f), the pressure-sensitive adhesive film 3 in which a pressure-sensitive adhesive layer that has been cut in advance into a planar shape that is slightly larger than the planar shape of the adhesive layer 2 is formed on one side, A support adhesive film 23 that covers the adhesive layer 2 and is laminated so as to be in contact with the peeling substrate 1 around the adhesive layer 2 and is cut in substantially the same shape as the support adhesive layer 22 is supported and bonded. Lamination is performed on the agent layer 22 (second lamination step). At this time, the adhesive film 3 and the support adhesive film 23 may have the same composition, or may have different compositions. As described above, the die bond dicing sheet 160 can be manufactured.

  3A to 3G are a series of process diagrams showing a second embodiment of a method for manufacturing a die bond dicing sheet. In the manufacturing method of the die bond dicing sheet concerning 2nd Embodiment, as shown to Fig.3 (a), the adhesive bond layer 2 is first laminated | stacked on the whole surface on the peeling base material 1 (1st lamination process). Next, as shown in FIG. 3B, the release substrate 1 is reached from the surface F <b> 1 opposite to the side in contact with the release substrate 1 of the adhesive layer 2 using the mold 5 or a member corresponding thereto. Incision is made until a predetermined shape is punched (first cutting step). Thereafter, as shown in FIG. 3 (c), the unnecessary portion 6 of the punched adhesive layer 2 is removed, and as shown in FIG. 3 (d), the adhesive layer 2 having a predetermined planar shape and And a support adhesive layer 22 disposed on the outside thereof. Next, as shown in FIG.3 (e), the adhesion film 3 is laminated | stacked so that the whole adhesive layer 2, the support adhesive layer 22, and the peeling base material 1 which has been exposed may be covered (3rd lamination process) ). Next, as shown in FIGS. 3 (f) and 3 (g), the pressure-sensitive adhesive film 3 is punched using a die or the like to cover the adhesive layer 2, and the adhesive layer 2 A pressure-sensitive adhesive film 3 laminated so as to be in contact with the peeling substrate 1 and a supporting pressure-sensitive adhesive film 23 covered with the supporting adhesive layer 22 and laminated so that one end is in contact with the peeling substrate 1 are formed ( Second cutting step). As described above, the die bond dicing sheet 170 can be manufactured.

  In these die bond dicing sheet manufacturing methods, the lamination of the adhesive layer 2 in the first laminating step is performed by, for example, using an adhesive layer forming varnish obtained by dissolving or dispersing the material constituting the adhesive layer 2 in a solvent. It can apply by apply | coating on the peeling base material 1, and removing a solvent by heating.

  Moreover, lamination | stacking of the adhesive film 3 in a 3rd lamination process is after, for example, melt | dissolving or disperse | distributing the material which comprises an adhesive layer to a solvent, and it is set as the varnish for adhesive layer formation, and this is apply | coated on a base film. The solvent is removed by heating to form an adhesive film 3 composed of a base film and an adhesive layer. And the obtained adhesive film 3 can be performed by laminating | stacking so that the whole adhesive layer 2, the support adhesive layer 22, and the peeling base material 1 which has exposed may be covered.

  Here, as a method for applying the varnish to the peeling substrate 1 and the substrate film, a known method can be used, for example, knife coating method, roll coating method, spray coating method, gravure coating method, bar coating method. A curtain coating method or the like can be used.

  Moreover, lamination | stacking of the adhesion film 3 can be performed by a conventionally well-known method, for example, can be performed using a laminator etc.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device using the die bond dicing sheet of the present invention will be described with reference to FIG. In the following description, a case where the die bond dicing sheet 100 shown in FIG. 1 is used as the die bond dicing sheet will be described. Moreover, in the die-bond dicing sheet 100, the adhesive film 3 shall have the structure by which the adhesive layer and the base film were laminated | stacked.

  FIGS. 4A to 4C are a series of process diagrams for performing an operation of attaching the laminated body 10 in the die bond dicing sheet 100 to the semiconductor wafer 32. As shown in FIG. 4A, the die bond dicing sheet 100 has a peeling substrate 1 serving as a carrier film, and is supported by two rolls 62 and 66 and a wedge-shaped member 64, while one end thereof is A first roll 42 is formed while being connected to a cylindrical core 44, and a second roll 52 is formed by being wound with the other end connected to a cylindrical core 54. ing. A core driving motor (not shown) for rotating the core 54 is connected to the core 54 of the second roll 52, and the peeling base after the laminate 10 is peeled off. The material 1 is wound at a predetermined speed.

  First, when the winding core driving motor rotates, the winding core 54 of the second roll 52 rotates, and the die bond dicing sheet 100 wound around the winding core 44 of the first roll 42 is changed to that of the first roll 42. Pulled out. Then, the drawn die bond dicing sheet 100 is guided onto a disk-shaped semiconductor wafer 32 arranged on a movable stage and a wafer ring 34 arranged so as to surround it. When the die bond dicing sheet 100 is pulled out of the first roll 42, peeling electrification occurs, but this charge is gradually discharged by the antistatic layer, and the influence is suppressed.

  Next, the laminate 10 composed of the adhesive layer 2 and the pressure-sensitive adhesive film 3 is peeled from the peeling substrate 1. At this time, the wedge-shaped member 64 is applied from the release substrate 1 side of the die bond dicing sheet 100, and the release substrate 1 is bent at an acute angle toward the member 64, and between the release substrate 1 and the laminate 10. A peeling start point will be created. Further, air is blown to the boundary surface between the peeling substrate 1 and the laminate 10 so that the peeling starting point is more efficiently created.

  After the peeling starting point is created between the peeling substrate 1 and the laminate 10 in this way, the adhesive film 3 is in close contact with the wafer ring 34 as shown in FIG. The stacked body 10 is attached so as to be in close contact with the semiconductor wafer 32. At this time, the laminated body 10 is pressed against the semiconductor wafer 32 by the roll 68. And as shown in FIG.4 (c), the affixing of the laminated body 10 on the semiconductor wafer 32 is completed, and the semiconductor wafer with a laminated body is obtained. The peeling charge when the peeling substrate 1 and the laminate 10 are peeled is gradually discharged by the antistatic layer, and the influence thereof is suppressed.

  By the procedure as described above, the laminate 10 can be attached to the semiconductor wafer 32 continuously in an automated process. Examples of the apparatus that performs the operation of attaching the stacked body 10 to the semiconductor wafer 32 include RAD-2500 (trade name) manufactured by Lintec Corporation.

  When the laminate 10 is attached to the semiconductor wafer 32 by such a process, the die bond dicing sheet 100 is used in a state of being rolled up (first roll 42). At this time, the die bond dicing sheet 100 is By having the support layer 20, it is possible to sufficiently suppress the winding mark from being transferred to the adhesive layer 2. Thereby, when the laminated body 10 is affixed to the semiconductor wafer 32, air entrainment or the like can be reduced, and generation of voids at the interface between the semiconductor wafer 32 and the adhesive layer 2 can be sufficiently suppressed.

  Next, the semiconductor wafer with a laminated body obtained by the above process is diced to obtain a semiconductor element with a laminated body having a required size. Here, steps such as washing and drying may be further performed. At this time, since the semiconductor wafer 32 is sufficiently adhered and held on the laminate 10 by the adhesive layer 2 and the adhesive film 3, the semiconductor wafer is suppressed from falling off during each of the above steps.

  Next, a high energy ray such as radiation is irradiated to the adhesive film 3 of the laminate 10, and a part or most of the adhesive layer in the adhesive film 3 is polymerized and cured. At this time, heating may be further performed for the purpose of accelerating the curing reaction simultaneously with or after irradiation with the high energy beam.

  Irradiation of the high energy ray to the adhesive film 3 is performed from the surface of the base film on which the adhesive layer is not provided. Therefore, when ultraviolet rays are used as the high energy rays, the substrate film needs to be light transmissive. In addition, when using an electron beam as a high energy ray, the base film does not necessarily need to be light transmissive.

  After the high energy beam irradiation, the semiconductor element to be picked up is picked up by, for example, a suction collet. At this time, the semiconductor element to be picked up can be pushed up from the lower surface of the base film by, for example, a needle rod. By curing the pressure-sensitive adhesive layer, the pressure-sensitive adhesive force between the semiconductor element and the adhesive layer 2 becomes larger than the pressure-sensitive adhesive force between the adhesive layer 2 and the pressure-sensitive adhesive layer. Then, peeling occurs at the interface between the adhesive layer 2 and the pressure-sensitive adhesive layer, and the semiconductor element with the adhesive layer in a state where the adhesive layer 2 adheres to the lower surface of the semiconductor element is picked up. In the present invention, since the antistatic layer is provided on either side of the adhesive layer, the peeling charge at this time can be prevented.

  This semiconductor element with an adhesive layer is placed on a support member for mounting a semiconductor element via the adhesive layer 2 and heated. The adhesive layer 2 develops an adhesive force by heating, and the bonding between the semiconductor element and the semiconductor element mounting support member is completed.

  Then, a semiconductor device is manufactured through a wire bonding process, a sealing process, and the like as necessary.

(Semiconductor device)
FIG. 5 is a schematic cross-sectional view showing an embodiment of a semiconductor device manufactured by the above-described method for manufacturing a semiconductor device of the present invention.

  As shown in FIG. 5, in the semiconductor device 300, two semiconductor elements with an adhesive layer composed of an adhesive layer 2 and a semiconductor element 72 are stacked on an organic substrate 70 that is a support member for mounting a semiconductor element. . A circuit pattern 74 and a terminal 76 are formed on the organic substrate 70, and the circuit pattern 74 and the two semiconductor elements 72 are connected to each other by wire bonds 78. These are sealed with a sealing material 80 to form a semiconductor device 300. The semiconductor device 300 is manufactured by using the die bonding dicing sheet 100 of the present invention by the above-described method for manufacturing a semiconductor device of the present invention.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these.

(Adjustment of adhesive layer varnish)
(B) 60 parts by mass of a cresol novolac type epoxy resin (trade name: YDCN-703, manufactured by Tohto Kasei Co., Ltd., epoxy equivalent: 220) as a polyfunctional epoxy resin as a component, and a phenol resin (curing agent) as a component (C) ) As a low water-absorbing phenol resin (trade name: XLC-LL, manufactured by Mitsui Chemicals, Phenol xylene glycol dimethyl ether condensate), 40 parts by mass of cyclohexanone and 1500 parts by mass are mixed with stirring to prepare the first varnish. did. Next, 1.5 parts by mass of γ-glycidoxypropyltrimethoxysilane (trade name: NUC A-189, manufactured by Nihon Unicar Co., Ltd.) as a coupling agent and γ-ureidopropyl were used as the coupling agent. Add 3 parts by mass of triethoxysilane (trade name: NCU A-1160, manufactured by Nippon Unicar Co., Ltd.), and further add silica filler (trade name: R972V, manufactured by Nippon Aerosil Co., Ltd.) as inorganic fine particles (inorganic filler) of component (D). ) After adding 32 parts by mass and stirring and mixing, a second varnish was prepared by carrying out dispersion treatment with a bead mill. Next, an epoxy group-containing acrylic copolymer (trade name: HTR-860P-3, manufactured by Teikoku Chemical Industry Co., Ltd.) as a high molecular weight component having a crosslinkable functional group as the component (A) is added to the second varnish. 200 parts by mass and 0.5 parts by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curesol 2PZ-CN, manufactured by Shikoku Kasei Co., Ltd.) as a curing accelerator are added and mixed by stirring to form an adhesive layer. The varnish was adjusted.

(Example 1)
The adhesive layer forming varnish is applied onto a 50 μm-thick polyethylene terephthalate film (trade name: Teijin Purex A31, manufactured by Teijin DuPont Film Co., Ltd.), which is a peeling substrate, and heat-dried at 140 ° C. for 5 minutes. Then, an adhesive layer in a B stage state having a film thickness of 20 μm was formed. Further, a polyethylene terephthalate film having a thickness of 25 μm is used as a base film, and a silicate antistatic agent (trade name: Colcoat X-103N, manufactured by Colcoat Co., Ltd.) on one side thereof has a solid content of 0.03 g / m ^2. And then dried in a hot air circulating oven at 120 ° C. for 30 seconds to produce a film with an antistatic layer formed on one side, and the two films are laminated with a laminator to produce film 1. did.
The antistatic agent-side polyethylene terephthalate film is peeled off from the film 1, and the adhesive film (trade name: FH-DC, manufactured by Furukawa Electric Co., Ltd.) is placed at room temperature (25) so that the adhesive layer is in contact with the adhesive layer. C.), a linear pressure of 1 kg / cm, and a speed of 0.5 m / min were applied to obtain a die bond dicing sheet (1).

(Example 2)
The adhesive layer forming varnish is applied onto a PET substrate so as to have a thickness of 20 μm in the same manner as in Example 1 to form an adhesive layer, and a silicate antistatic agent (product) is formed on the adhesive layer. Name: Colcoat X-103N, manufactured by Colcoat Co., Ltd.) was formed by spraying an antistatic layer so that the solid content was 0.03 g / m ^2, and the adhesive film was laminated in the same manner as in Example 1 to form a die bond dicing sheet. (2) was obtained.

(Comparative Example 1)
The adhesive layer forming varnish is applied onto a PET substrate so as to have a thickness of 20 μm, and an adhesive film is laminated in the same manner as in Examples 1 and 2 without forming an antistatic layer, and a die bond dicing sheet (3 )

The die bond dicing sheets (1) to (3) obtained above were used to measure die shear strength, peel strength before and after UV irradiation, storage elastic modulus and surface resistivity, and the results are summarized in Table 1. . The measuring method is shown below.
(Die shear strength): B-stage die-bonding film was punched out using a 6.5 mm x 6.5 mm punching die, laminated to a chip (5.0 mm square) at 60 ° C, and thermocompression testing machine (Hitachi Chemical Techno Plant Co., Ltd.) Was used, and the substrate was cured by step curing at 120 ° C. for 1 hour and 170 ° C. for 1 hour. Further, after standing on a hot plate at 250 ° C. for 30 seconds, the die shear strength was measured using a universal bond tester (Dage series 4000).
Chip size: 6.5 mm × 6.5 mm × 400 μmt
Substrate: 20 mm × 10 mm × 100 μmt
Solder resist: AUS308
Thermocompression bonding conditions: 120 ° C., 0.25 kg, 5 s
Die shear strength measurement speed: 50 μm / sec
(Peel strength before and after UV irradiation): The peel strength at the interface between the adhesive layer and the pressure-sensitive adhesive layer was measured before and after UV irradiation.
(Storage modulus): Using a dynamic viscoelasticity measuring apparatus ("Rheogel-E4000" manufactured by UBM), sample size: length 20 mm, width 4 mm, temperature range: -30 to 200 ° C, temperature increase rate 3 ° C / Min, tensile mode, 10 Hz, and automatic static load. The measured values at 35 ° C. are shown in Table 1.
(Surface specific resistance value): The surface resistivity (JIS-K6911 compliant) of the surface on which the antistatic layer was formed was measured by a double ring probe method using Hiresta UP manufactured by Mitsubishi Chemical Analytech Co., Ltd.

  When the antistatic layer is provided as in Examples 1 and 2, the die shear strength and peel strength are slightly reduced, but the surface specific resistance value is significantly lower than that of Comparative Example 1 in which no antistatic layer is provided, and is effective in suppressing peeling charge. It is.

1: Release substrate 2: Adhesive layer 3: Adhesive layer (adhesive film)
5: Mold 6: Unnecessary portion 10: Laminate 20: Support layer 22: Support adhesive layer 23: Support adhesive film 32: Semiconductor wafer 34: Wafer ring 42: First roll 44: Core 52: Second Roll 54: Winding core 62: Roll 64: Wedge-shaped member 66: Roll 68: Roll 70: Organic substrate 72: Semiconductor element 74: Circuit pattern 76: Terminal 78: Wire bond 80: Sealing material 100: Die bond dicing sheet 160: Die bond dicing sheet 170: die bond dicing sheet 300: semiconductor device

Claims (5)

  In a die bond dicing sheet formed of a pressure-sensitive adhesive film having a release substrate, an adhesive layer, and a pressure-sensitive adhesive layer formed on one side, and the pressure-sensitive adhesive layer being on the side of the adhesive layer, at least one of the adhesive layers Die bond dicing sheet with antistatic layer on the side. 2. The die-bonded dicing sheet according to claim 1, wherein the antistatic layer has a surface resistivity of 1 × 10 ¹² Ω / □ or less in an environment of 23 ° C. and 50% RH.   The adhesive layer contains (A) a high molecular weight component having a crosslinkable functional group, (B) a polyfunctional epoxy resin, (C) a phenol resin (D) inorganic fine particles, and the weight average molecular weight of the component (A) is 100,000. To 1 million, the glass transition temperature is -50 ° C to 50 ° C, and (A) :( B) :( C) is (A) :( B) :( C) = 40-70: 5 by mass ratio. The component (D) is 5 to 100 parts by mass with respect to a total of 100 parts by mass of (A), (B), and (C). The die bond dicing sheet as described.   The die bond dicing sheet according to any one of claims 1 to 3, wherein a laminate composed of an adhesive layer and a pressure-sensitive adhesive film is peeled from a release substrate, and the laminate is separated from a surface on the adhesive layer side. Affixing step of attaching to a wafer to obtain a semiconductor wafer with a laminate, and dicing the semiconductor wafer with a laminate to the interface between the adhesive layer and the adhesive film, and making the semiconductor wafer a semiconductor of a predetermined size A dicing process for cutting into elements, and a high energy ray on the laminate to reduce the adhesive force of the adhesive film to the adhesive layer, and then picking up the semiconductor element from the adhesive film together with the adhesive layer And picking up the semiconductor element with the adhesive layer, and bonding the semiconductor element in the semiconductor element with the adhesive layer The method of manufacturing a semiconductor device which comprises a bonding step of bonding to the adherend with the layers, the.   The method of manufacturing a semiconductor device according to claim 4, wherein the adherend is a support member for mounting a semiconductor element or another semiconductor element.

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