TW201546917A - Method for producing semiconductor device - Google Patents

Abstract

Provided is a method for producing a semiconductor device, said method making it possible to suppress the occurrence of voids in an interface between an adherend and a sheet-like resin composition, and making it easy to predict an amount of protrusion after mounting. The present invention is a method for producing a semiconductor device that is provided with an adherend, a semiconductor element that is electrically connected to the adherend, and a sheet-like resin composition that fills the space between the adherend and the semiconductor element, said method including a step of preparing a semiconductor element provided with a sheet-like resin composition, said semiconductor element being formed by bonding a sheet-like resin composition to a semiconductor element, and a connection step in which the semiconductor element and the adherend are electrically connected and the space between the adherend and the semiconductor element is filled with the sheet-like resin composition. Therein, the minimum melt viscosity of the sheet-like resin composition at 80-200 DEG C is 100-3000 Pa.s, inclusive, and the volume (V) of the sheet-like resin composition and the volume (T) required to fill the space between the adherend and the semiconductor element satisfies the belowmentioned formula. 0.85T ≤ V ≤ 1.25T.

Description

Semiconductor device manufacturing method

The present invention relates to a method of fabricating a semiconductor device.

In recent years, the semiconductor device and its package have been further reduced in thickness and size. As a countermeasure for achieving this, a flip-chip type semiconductor device obtained by mounting a semiconductor element such as a semiconductor wafer on a substrate by flip chip bonding (a flip chip connection) is widely used. The flip chip connection is formed by facing the circuit surface of the semiconductor wafer with the electrode of the adherend (face down), and forming the bump electrode formed on the circuit surface of the semiconductor wafer and the electrode of the adherend A fixed and fixed mounting method.

In order to secure the surface of the semiconductor element or the connection reliability between the semiconductor element and the substrate, the space between the semiconductor element and the substrate is filled with a sealing resin after the flip chip connection. Although such a sealing resin is widely used as a liquid sealing resin, it is difficult to adjust the injection position or the injection amount of the liquid sealing resin. Therefore, the industry has proposed a technique of filling a space between a semiconductor element and a substrate using a sheet-like sealing resin (underfill sheet) (Patent Document 1).

In general, in the process of using the sheet-like resin composition as the underfill sheet, the semiconductor element is filled with a space between the adherend and the semiconductor element, such as a substrate, by a sheet-like resin composition attached to the semiconductor element. The order in which it is attached to the adherend. In the above process, the filling of the space between the adherend and the semiconductor element is facilitated.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 44387973

In the above process, since the sheet-like resin composition bonded to the semiconductor element is bonded to the adherend, it is required that the sheet-like resin composition follows the unevenness of the surface of the adherend and is in close contact with each other. However, with the increase in the number of three-dimensional structures such as electrodes on the adherend or the narrowing of the circuit, the degree of adhesion of the sheet-like resin composition to the adherend is lowered to the adherend and the sheet-like resin composition. A case where a gap (bubble) is generated. When such a bubble is present, when the pressure reduction treatment or the heat treatment is performed in the following step, the bubble is swollen, and the adhesion between the adherend and the sheet-like resin composition is lowered. As a result, When the semiconductor element is mounted on the adherend, the reliability of connection between the semiconductor element and the adherend is lowered.

In addition, as the size and thickness of the semiconductor device are reduced, the sheet-like resin composition after mounting the semiconductor element is stabilized from the overflow shape of the semiconductor element. If there is a large amount of overflow, the failure or yield of the part due to contact with other elements may be reduced. On the other hand, if the amount of overflow is small (the amount of filling is small), the reliability of the connection is caused. The impact of the impact. Thus, in order to maximize the throughput per unit area and increase the yield, it is important to stabilize the overflow shape of the sheet-like resin composition. In particular, the prediction of spillovers is extremely difficult in response to process design for a small number of small-scale production in recent years.

An object of the present invention is to provide a method of manufacturing a semiconductor device capable of suppressing generation of voids at the interface between the adherend and the sheet-like resin composition and easily predicting the amount of overflow after mounting.

The inventors of the present invention have diligently conducted research, and as a result, have found that the above object can be attained by the following constitution, and the present invention has been completed.

That is, the present invention includes a method of manufacturing a semiconductor device including an adherend, a semiconductor element electrically connected to the adherend, and a sheet-like resin composition filling a space between the adherend and the semiconductor element, and The method includes the steps of: preparing a semiconductor element with a sheet-like resin composition, which is obtained by laminating a sheet-like resin composition to a semiconductor element; and a connecting step of separating the adherend and the semiconductor element The space is filled with the sheet-like resin composition, and the semiconductor element is electrically connected to the adherend; the sheet-like resin composition has a minimum melt viscosity of 100 Pa at 80 ° C to 200 ° C. s above and 3000Pa. In the following, the volume V of the sheet-like resin composition and the volume T required to fill the space between the adherend and the semiconductor element satisfy the following formula: 0.85 T ≦ V ≦ 1.25 T

(wherein T = AW, A is the apparent volume of the space between the semiconductor element and the adherend after the above connecting step, and W is a structure existing in the space between the semiconductor element and the adherend in the space The volume occupied).

In the manufacturing method, the lowest melt viscosity of the sheet-like resin composition at 80 ° C to 200 ° C is set to 100 Pa. s above and 3000Pa. s or less, the followability of the sheet-like resin composition to the semiconductor element or the adherend can be improved when the semiconductor element is electrically connected, and the occurrence of voids in the electrical connection of the semiconductor element can be suppressed. Further, since the sheet-like resin composition has a moderate viscosity, the sheet-like resin composition can be stabilized from the overflow of the space between the semiconductor element and the adherend. When the minimum melt viscosity is too low, the amount of deformation of the sheet-like resin composition at the time of mounting increases, and the amount of overflow increases. When the minimum melt viscosity is too high, the followability of the sheet-like resin composition is lowered to cause voids.

Further, in the production method, the volume V of the sheet-like resin composition satisfies a specific relationship with the volume T required to fill the space between the adherend and the semiconductor element, and thus The space between the adherend and the semiconductor element after mounting can be appropriately filled by the sheet-like resin composition, and as a result, the sheet-like resin composition can be stabilized from the overflow shape of the semiconductor element. In the region of V < 0.85 T, the volume of the sheet-like resin composition is too small to cause an unfilled portion, resulting in generation of voids. In the region of V > 1.25 T, the volume of the sheet-like resin composition is too large to cause an excessive amount of overflow.

The sheet-like resin composition preferably contains an inorganic filler, and the inorganic filler has an average particle diameter of 10 nm or more and 500 nm or less. Thereby, the viscosity of the sheet-like resin composition can be easily controlled, and the suppression of the void and the stabilization of the overflow shape can be achieved at a higher level. Further, it is possible to impart appropriate transparency to the sheet-like resin composition.

The content of the inorganic filler in the sheet-like resin composition is preferably 70% by weight or less. Thereby, excessive increase in the viscosity of the sheet-like resin composition can be suppressed, and generation of voids can be effectively suppressed.

The sheet-like resin composition preferably contains an acrylic resin having a weight average molecular weight of 5 × 10 ⁵ or more. Thereby, an appropriate viscosity can be imparted to the sheet-like resin composition, and the generation of voids and the stabilization of the overflow shape can be more efficiently achieved.

1‧‧‧Back grinding belt

1a‧‧‧Substrate

1b‧‧‧Adhesive layer

2‧‧‧Flake resin composition

3‧‧‧Semiconductor wafer

3a‧‧‧ circuit surface

3b‧‧‧back

4‧‧‧Connecting components

5‧‧‧Semiconductor wafer (semiconductor component)

10‧‧‧Layered film

11‧‧‧Cutting Tape

11a‧‧‧Substrate

11b‧‧‧Adhesive layer

16‧‧‧Adhesive body

17‧‧‧Electrical materials

20‧‧‧Semiconductor device

41‧‧‧Cutting Tape

41a‧‧‧Substrate

41b‧‧‧Adhesive layer

42‧‧‧Flake resin composition

43‧‧‧Semiconductor wafer

44‧‧‧Connecting members

45‧‧‧Semiconductor wafer (semiconductor component)

60‧‧‧Semiconductor device

66‧‧‧Adhesive body

Fig. 1 is a schematic cross-sectional view showing a laminated sheet according to an embodiment of the present invention.

Fig. 2A is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to an embodiment of the present invention.

Fig. 2B is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to an embodiment of the present invention.

Fig. 2C is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to an embodiment of the present invention.

Fig. 2D is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to an embodiment of the present invention.

2E is a view showing one of manufacturing steps of a semiconductor device according to an embodiment of the present invention; The section pattern diagram of the step.

Fig. 2F is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to an embodiment of the present invention.

Fig. 3A is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to another embodiment of the present invention.

Fig. 3B is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to another embodiment of the present invention.

Fig. 3C is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to another embodiment of the present invention.

Fig. 3D is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in some or all of the drawings, a portion that is not useful for explanation is omitted, and a portion that is enlarged or reduced for ease of explanation is shown. The term "upper and lower positional relationship" is used unless otherwise specified, and is used for ease of explanation only, without any intention of limiting the constitution of the present invention.

<First embodiment>

In the present embodiment, a laminated sheet in which a sheet-like resin composition and a back grinding belt are integrated and a method of manufacturing a semiconductor device using the same will be described as an example. The following description can be basically applied to the case of the sheet-like resin composition alone, except for the case of the adhesive layer of the tape for back grinding.

(layered film)

As shown in FIG. 1, the laminated sheet 10 is provided with the back grinding belt 1 and the sheet-like resin composition 2 laminated on the back grinding belt 1. Further, the sheet-like resin composition 2 may be provided in a size sufficient for bonding to the semiconductor wafer 3 (see FIG. 2A) as shown in FIG. It is also possible to laminate the entire surface of the tape 1 for back grinding.

(flaky resin composition)

The sheet-like resin composition 2 in the present embodiment can be used as a film for sealing which fills a space between a surface-mounted semiconductor element and an adherend.

The lowest melt viscosity of the sheet-like resin composition 2 at 80 ° C to 200 ° C is 100 Pa. s above and 3000Pa. s can be below. Further, the minimum melt viscosity is preferably 150 Pa. s above and 2000Pa. Below s, more preferably 200Pa. s above and 1500Pa. s below. By setting the minimum melt viscosity to the above range, the followability of the sheet-like resin composition to the semiconductor element or the adherend can be improved when the semiconductor element is electrically connected, and the occurrence of voids in the electrical connection of the semiconductor element can be suppressed. Further, since the sheet-like resin composition has a moderate viscosity, the sheet-like resin composition can be stabilized from the overflow of the space between the semiconductor element and the adherend. When the minimum melt viscosity is too low, the amount of deformation of the sheet-like resin composition at the time of mounting increases, and the amount of overflow increases. When the minimum melt viscosity is too high, the followability of the sheet-like resin composition is lowered to cause voids.

As a constituent material of the sheet-like resin composition, a thermoplastic resin and a thermosetting resin are used in combination. Further, a thermoplastic resin or a thermosetting resin may be used alone.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutylene. Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET (polyethylene terephthalate, polyterephthalic acid) A saturated polyester resin such as ethylene glycol) or PBT (polybutylene terephthalate), a polyamidoximine resin, or a fluororesin. These thermoplastic resins may be used singly or in combination of two or more. Among these thermoplastic resins, an acrylic resin having less ionic impurities, high heat resistance, and reliability of a semiconductor element is particularly preferable.

The weight average molecular weight of the acrylic resin is preferably 5 × 10 ⁵ or more, and more preferably 7 × 10 ⁵ or more. Thereby, an appropriate viscosity can be imparted to the sheet-like resin composition, and generation of voids and stabilization of the overflow shape can be achieved more efficiently. Further, from the viewpoint of suppressing excessive increase in viscosity, the weight average molecular weight is preferably 1 × 10 ⁷ or less.

The acrylic resin is not particularly limited, and one or more kinds of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having a carbon number of 30 or less, particularly a carbon number of 4 to 18, may be mentioned. A polymer or the like as a component. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, and a cyclohexyl group. 2-ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, ten Octaalkyl, or dodecyl, and the like.

Further, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, and antibutene. Various carboxyl group-containing monomers such as diacid or crotonic acid; various anhydride monomers such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate and 2-hydroxypropyl (meth)acrylate , 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, (meth)acrylic acid Various hydroxyl group-containing monomers such as 12-hydroxylauryl ester or (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamide a sulfonic acid group-containing monomer such as -2-methylpropanesulfonic acid, (meth)acrylamide, propanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acryloxynaphthalenesulfonic acid; Or a monomer containing a phosphate group such as 2-hydroxyethylpropenyl phosphate; a monomer containing a cyano group such as acrylonitrile or the like.

Examples of the thermosetting resin include a phenol resin, an amine resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a polyoxyxylene resin, or a thermosetting polyimide resin. . These resins may be used singly or in combination of two or more. More preferably, it is an epoxy resin containing a small amount of ionic impurities which cause corrosion of a semiconductor element. Further, as the curing agent for the epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, and for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, or the like can be used. Bisphenol AF, biphenyl, naphthalene, anthracene, phenolic novolak, o-cresol novolac, trishydroxyphenylmethane, tetraphenol ethane, etc. Epoxy resin, epoxy resin such as carbendazim type, triglycidyl isocyanurate type or glycidylamine type. These may be used alone or in combination of two or more. Among these epoxy resins, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type resin or a tetraphenol ethane type epoxy resin is particularly preferable. This is because the epoxy resin and the phenol resin as a curing agent have sufficient reactivity and are excellent in heat resistance and the like.

Further, the phenol-based resin functions as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a hydrazine. A novolak type phenol type resin such as a phenol novolak resin, a novolac type phenol type resin, or a polyhydroxystyrene such as polyparaxyl styrene. These may be used alone or in combination of two or more. Among these phenolic resins, a phenol novolac resin and a phenol aralkyl resin are particularly preferable. The reason for this is that the connection reliability of the semiconductor device can be improved.

For example, the ratio of the epoxy resin to the phenol resin is preferably 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component and the hydroxyl group in the phenol resin. More preferably, it is 0.8 to 1.2 equivalents. That is, the reason is that if the blending ratio of the two is out of the above range, a sufficient curing reaction cannot be performed, and the properties of the cured epoxy resin are likely to deteriorate.

Further, in the present embodiment, a sheet-like resin composition of an epoxy resin, a phenol resin, and an acrylic resin is particularly preferably used. These resins have low ionic impurities and high heat resistance, so that the reliability of the semiconductor element can be ensured. In this case, the blending ratio of the epoxy resin to the phenol resin is 10 to 1000 parts by weight based on 100 parts by weight of the acrylic resin component.

The thermosetting-promoting catalyst of the epoxy resin and the phenol resin is not particularly limited, and can be appropriately selected from known thermal hardening catalysts. The thermosetting-suppressing catalyst may be used singly or in combination of two or more. As a thermosetting-promoting catalyst, for example, an amine-based thermosetting-promoting catalyst, a phosphorus-based thermosetting-promoting catalyst, an imidazole-based thermosetting-promoting catalyst, a boron-based thermosetting-promoting catalyst, and a phosphorus-boron-based thermosetting accelerator can be used. Media and so on.

Among them, the thermosetting-promoting catalyst is an organic compound containing a nitrogen atom in the molecule, and preferably the molecular weight of the organic compound is 50 to 500. Thereby, the degree of progress of the thermosetting reaction accompanying the temperature rise of the sheet-like resin composition can be controlled, and as a result, it is easy to carry out a design having a desired viscosity at each temperature. As an example of the above organic compound, an imidazole-based thermosetting-promoting catalyst can be preferably used. Commercially available products can be preferably used, and examples thereof include "2PHZ-PW" (manufactured by Shikoku Chemicals Co., Ltd.).

In order to remove the oxide film on the surface of the solder bump and to facilitate mounting of the semiconductor element, a flux may be added to the sheet-like resin composition 2. The flux is not particularly limited, and a conventionally known compound having a flux action can be used, and examples thereof include bisphenolic acid, adipic acid, acetylsalicylic acid, benzoic acid, diphenylglycolic acid, and hydrazine. Acid, benzyl benzoic acid, malonic acid, 2,2-bis(hydroxymethyl)propionic acid, salicylic acid, o-methoxybenzoic acid (o-anisic acid), m-hydroxybenzoic acid, succinic acid, 2 ,6-dimethoxymethyl-p-cresol, benzamidine, carbonium, propylenediazine, diacetyl, pentane, salicylate, iminodiethylenediazine, y Kang Erqi, lemon triterpene, thiocarbonate, benzophenone oxime, 4,4'-oxobisbenzenesulfonate and diammonium adipate. The amount of the flux to be added may be about 0.1 to 20 parts by weight based on 100 parts by weight of the resin component contained in the sheet-like resin composition.

In the present embodiment, the sheet-like resin composition 2 can also be colored. In the sheet-like resin composition 2, the color to be exhibited by coloring is not particularly limited, and for example, black, blue, red, green, or the like is preferable. In the case of coloring, it can be suitably selected and used from a known coloring agent such as a pigment or a dye.

When the sheet-like resin composition 2 of the present embodiment is crosslinked to some extent in advance, it is preferable to add a polyfunctional compound which reacts with a functional group or the like at the end of the molecular chain of the polymer in advance. Joint agent. Thereby, the adhesion characteristics at a high temperature can be improved, and the heat resistance can be improved.

As the crosslinking agent, a polyisocyanate compound such as toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, or an adduct of a polyhydric alcohol and a diisocyanate is more preferable. The amount of the crosslinking agent to be added is usually preferably 0.05 to 7 parts by weight based on 100 parts by weight of the polymer. If the amount of the crosslinking agent is more than 7 parts by weight, the subsequent force is lowered, which is not preferable. On the other hand, if it is less than 0.05 part by weight, the cohesive strength is insufficient, which is not preferable. Further, other polyfunctional compounds such as an epoxy resin may be contained together with such a polyisocyanate compound as needed.

Further, an inorganic filler can be appropriately formulated in the sheet-like resin composition 2. The formulation of the inorganic filler makes it possible to impart conductivity or thermal conductivity, adjust the storage elastic modulus, and the like.

Examples of the inorganic filler include ceramics such as cerium oxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, cerium oxide, cerium carbide, and cerium nitride, and aluminum, copper, silver, gold, nickel, and chromium. Examples of the metal, or an alloy such as lead, tin, zinc, palladium or solder, and various inorganic powders including carbon. These may be used alone or in combination of two or more. Among them, cerium oxide, especially molten cerium oxide, is preferably used.

The average particle diameter of the inorganic filler is not particularly limited, but is preferably 10 nm or more and 500 nm or less, more preferably 20 nm or more and 400 nm or less, and still more preferably 50 nm or more and 300 nm or less. By setting the average particle diameter of the inorganic filler to the above range, it is easy to control the viscosity of the sheet-like resin composition, and it is possible to impart appropriate transparency to the sheet-like resin composition. When the average particle diameter of the inorganic filler is too small, aggregation of particles tends to occur, and it may be difficult to form a sheet-like resin composition or it may be difficult to control the viscosity. On the other hand, if the average particle diameter is too large, the transparency of the sheet-like resin composition is lowered, or inorganicity is likely to occur. Since the particles are mixed in the joint portion between the sheet-like resin composition and the adherend, the connection reliability of the semiconductor device is lowered. Further, in the present invention, inorganic fillers having different average particle diameters may be used in combination with each other. Further, the average particle diameter is a value obtained by a photometric particle size distribution meter (manufactured by HORIBA, device name: LA-910).

The upper limit of the content of the inorganic filler in the sheet-like resin composition is preferably 70% by weight or less, more preferably 65% by weight or less, still more preferably 60% by weight or less. Further, the lower limit of the content of the inorganic filler is preferably 20% by weight or more, more preferably 30% by weight or more, still more preferably 40% by weight or more. By setting the content of the inorganic filler to the above range, it is possible to maintain appropriate viscosity and good transparency of the sheet-like resin composition, and it is possible to more effectively suppress the occurrence of voids and stabilize the overflow shape.

The sheet-like resin composition preferably contains an epoxy resin, a curing agent, a thermoplastic resin, an inorganic filler, and a thermosetting-promoting catalyst as described above. Thereby, the control of the viscosity of the sheet-like resin composition can be performed efficiently.

In addition, in the sheet-like resin composition 2, other additives may be appropriately formulated in addition to the above-mentioned inorganic filler. Examples of other additives include a flame retardant, a decane coupling agent, and an ion scavenger. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These may be used alone or in combination of two or more. Examples of the above decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropyl group. Diethoxy decane and the like. These compounds may be used singly or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and barium hydroxide. These may be used alone or in combination of two or more.

Further, the water absorption ratio of the sheet-like resin composition 2 before the heat curing at a temperature of 23 ° C and a humidity of 70% is preferably 1% by weight or less, more preferably 0.5% by weight or less. By having the water absorption ratio as described above, the sheet-like resin composition 2 can suppress the absorption of moisture into the sheet-like resin composition 2, and more effectively suppress the generation of voids when the semiconductor element 5 is mounted. Further, the lower limit of the water absorption rate is preferably as small as possible, and is preferably substantially 0% by weight, more preferably 0% by weight.

The thickness of the sheet-like resin composition 2 (the total thickness in the case of a double layer) is set such that the volume V of the sheet-like resin composition satisfies a specific relationship with the volume T required to fill the space between the adherend and the semiconductor element. Just fine.

The sheet-like resin composition 2 of the laminated sheet 10 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the sheet-like resin composition 2 before being used for practical use. When the separator is attached to the sheet-like resin composition 2 of the laminated sheet, the semiconductor wafer 3 is peeled off. As the separator, surface coating may be carried out by using a stripping agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, or a fluorine-based release agent or a long-chain alkyl ester-based release agent. Plastic film or paper.

(back grinding belt)

The back grinding belt 1 includes a base material 1a and an adhesive layer 1b laminated on the base material 1a. Further, the sheet-like resin composition 2 is laminated on the adhesive layer 1b.

(substrate)

The base material 1a is a strength matrix of the laminated sheet 10. For example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene Polyolefin such as polymethylpentene; ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, Polyesters such as ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate; polycarbonate, polyimine, Polyetheretherketone, polyimide, polyetherimine, polyamine, fully aromatic polyamine, polyphenylene sulfide, aromatic polyamine (paper), glass, glass cloth, fluororesin, poly Vinyl chloride, polyvinylidene chloride, cellulose resin, polyoxyxylene resin, metal (foil), paper, and the like. When the adhesive layer 1b is an ultraviolet curing type, the substrate 1a is preferably transparent to ultraviolet rays.

Moreover, as a material of the base material 1a, a polymer such as a crosslinked body of the above resin may be mentioned. The above plastic film can be used without extension, and it is also possible to use a one-axis or two-axis extension processor as needed.

The surface of the substrate 1a may be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, ionizing radiation treatment, or the like in order to improve adhesion to the adjacent layer, retention, and the like. Physical treatment, coating treatment using a primer (for example, an adhesive described below).

The substrate 1a may be appropriately selected from the same species or a different species, and may be used in combination with several kinds as needed. Moreover, in order to provide an antistatic function to the base material 1a, a vapor deposition layer containing a conductive material having a thickness of about 30 to 500 Å, such as a metal, an alloy, or the like, may be provided on the base material 1a. Antistatic function can also be imparted by adding an antistatic agent to the substrate. The substrate 1a may be a single layer or a composite layer of two or more types.

The thickness of the substrate 1a can be appropriately determined, and is generally 5 μm or more and 200 μm or less, preferably 35 μm or more and 120 μm or less.

Further, in the substrate 1a, various additives such as a color former, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, and a flame retardant may be contained within a range not impairing the effects of the present invention and the like. Wait).

(adhesive layer)

The adhesive for forming the adhesive layer 1b is not particularly limited as long as it is firmly held by the sheet-like resin composition at the time of back grinding, and is bonded with a sheet-like resin after grinding on the back side. When the semiconductor wafer is transferred to the dicing tape, the semiconductor wafer to which the sheet-like resin composition is attached can be peelably controlled. For example, a general pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive can be used. The pressure-sensitive adhesive is preferably based on an acrylic polymer in terms of cleaning and cleaning properties of an organic solvent such as a semiconductor wafer or glass, which is resistant to contamination, such as ultrapure water or an organic solvent such as an alcohol. A polymer based acrylic adhesive.

As the acrylic polymer, those using acrylate as a main monomer component can be mentioned. As the acrylate, for example, an alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, third butyl ester, pentane) can be used. Ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, thirteen Alkyl esters, tetradecyl esters, cetyl esters, octadecyl esters, eicosyl esters and the like have a carbon number of from 1 to 30, especially a linear or branched carbon number of from 4 to 18. One or two or more kinds of acrylic polymers having a monomer component such as a cycloalkyl ester (such as a cyclopentyl ester or a cyclohexyl ester). Further, (meth) acrylate means acrylate and/or methacrylate, and (meth) of the present invention has the same meaning.

For the purpose of reforming such as cohesive force and heat resistance, the acrylic polymer may optionally contain a unit corresponding to another monomer component copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumaric acid. a monomer having a carboxyl group such as crotonic acid; an acid anhydride monomer such as maleic anhydride or itaconic acid anhydride; 2-hydroxyethyl (meth)acrylate; 2-hydroxypropyl (meth)acrylate; ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, 12-hydroxy laurel (meth) acrylate a monomer having a hydroxyl group such as an ester or a (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; a styrenesulfonic acid, an allylsulfonic acid, or a 2-(methyl)propenylamine-2-methyl group a sulfonic acid group-containing monomer such as propanesulfonic acid, (meth)acrylamide, propanesulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloxynaphthalenesulfonic acid; 2-hydroxyethylpropene a monomer containing a phosphate group such as mercaptophosphate; acrylamide, acrylonitrile, or the like. One or two or more kinds of these copolymerizable monomer components can be used. The amount of the copolymerizable monomer used is preferably 40% by weight or less of all the monomer components.

Further, in order to carry out crosslinking, the above acrylic polymer may contain more if necessary A functional monomer or the like is used as a comonomer component. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and new Pentandiol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate Ester, epoxy (meth) acrylate, polyester (meth) acrylate, (meth) acrylate urethane, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer to be used is preferably 30% by weight or less of all the monomer components in terms of adhesion characteristics and the like.

The acrylic polymer is obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can also be carried out by any one of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. It is preferred that the content of the low molecular weight substance is small in terms of preventing contamination of the adherend to be cleaned and the like. In this respect, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.

Moreover, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably used in the above-mentioned adhesive. A specific method of the external crosslinking method is a method in which a reaction is carried out by adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine crosslinking agent. In the case of using an external crosslinking agent, the amount of the crosslinking agent is appropriately determined depending on the balance with the base polymer to be crosslinked and the use as the adhesive. In general, it is preferably formulated in an amount of about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the base polymer. Further, in the adhesive, in addition to the above components, additives such as various conventionally known adhesion-imparting agents and anti-aging agents may be used as needed.

The adhesive layer 1b can be formed by a radiation hardening type adhesive. The radiation-curable adhesive can easily reduce the adhesion by irradiating radiation such as ultraviolet rays to increase the degree of crosslinking, and can easily peel off the semiconductor wafer with the sheet-like resin composition. Examples of the radiation include X-ray, ultraviolet light, electron beam, α-ray, β-ray, and neutron beam. Wait.

The radiation-curable adhesive can be used without any particular limitation, and a radiation curable functional group such as a carbon-carbon double bond is used and adhesion is exhibited. The radiation-curable adhesive is exemplified by the addition of a radioactive monomer component or an oligomer component to a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive. Adhesive.

Examples of the radiation curable monomer component to be blended include a urethane oligomer, a (meth)acrylic acid urethane, a trimethylolpropane tri(meth)acrylate, and a tetrahydroxyl group. Methane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate or the like. Further, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and the weight average molecular weight thereof is preferably 100~. The range of around 30,000. The amount of the radiation-curable monomer component or the oligomer component can be appropriately determined depending on the type of the pressure-sensitive adhesive layer, and the amount of adhesion of the pressure-sensitive adhesive layer can be reduced. In general, it is, for example, 5 to 500 parts by weight, preferably 40 to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

In addition, as the radiation-curable adhesive, in addition to the above-described additive-type radiation-curable adhesive, a base polymer having a carbon-carbon double bond in a polymer side chain or a main chain or a main chain terminal may be used. An intrinsic radiation curable adhesive. Since the intrinsic type radiation curable adhesive does not need to contain an oligomer component as a low molecular component or the like, or does not contain a large amount of the adhesive, it is possible to form an adhesive having a stable layer structure by moving the adhesive over a period of time, such as an oligomer component. Layer, therefore better.

The above base polymer having a carbon-carbon double bond can be used without any particular limitation, and has a carbon-carbon double bond and has adhesiveness. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. As a basic skeleton of an acrylic polymer, the above-mentioned An exemplary acrylic polymer.

The method of introducing the carbon-carbon double bond to the above acrylic polymer is not particularly limited, and various methods can be employed. However, when a carbon-carbon double bond is introduced into the polymer side chain, molecular design is easily performed. For example, a method in which a monomer having a functional group in an acrylic polymer is copolymerized in advance, and a compound having a functional group reactive with the functional group and a carbon-carbon double bond is maintained as a carbon-carbon double The bond is hardenable and undergoes a condensation or addition reaction.

Examples of the combination of these functional groups include a carboxyl group, an epoxy group, a carboxyl group and an aziridine group, a hydroxyl group and an isocyanate group. In the combination of these functional groups, in view of easiness of the reaction, a combination of a hydroxyl group and an isocyanate group is preferred. Further, in the case where a combination of the above-mentioned acrylic polymer having a carbon-carbon double bond is produced by a combination of the functional groups, the functional group may be on either side of the acrylic polymer and the above compound, preferably the above. In the combination, it is preferred that the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate, 2-methylpropenyloxyethyl isocyanate, m-isopropenyl-α, α-di Methylbenzyl isocyanate and the like. Further, as the acrylic polymer, copolymerization of the above-exemplified hydroxyl group-containing monomer or 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether ester compound can be used. Founder.

The above-mentioned intrinsic type radiation curable adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, but it is also possible to prepare the above-mentioned radiation curable monomer component or low without deteriorating the properties. Polymer component. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer.

In the case where it is cured by ultraviolet rays or the like, the radiation curable adhesive preferably contains a photopolymerization initiator. As the photopolymerization initiator, for example, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one, α-hydroxy-α,α'-dimethylacetophenone can be exemplified. , an α-keto alcohol compound such as 2-methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylbenzene Ketone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2- An acetophenone-based compound such as phenylpropanoid-1-one; a benzoin ether compound such as benzoin ethyl ether, benzoin isopropyl ether, aniseed methoxyether; a ketal compound such as benzoin dimethyl ketal; An aromatic sulfonium chloride compound such as naphthosulfonium chloride; a photoactive lanthanide compound such as 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)anthracene; benzophenone, benzene a benzophenone compound such as formazanic acid or 3,3'-dimethyl-4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone And other thioxanthone compounds; camphorquinone; halogenated ketone; fluorenylphosphine oxide; decylphosphonate. The amount of the photopolymerization initiator to be added is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

Further, when radiation is irradiated, when a hardening disorder due to oxygen occurs, it is preferable to block oxygen (air) from the surface of the radiation-curable adhesive layer 1b by some methods. For example, a method of coating the surface of the above-mentioned pressure-sensitive adhesive layer 1b with a separator or a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere may be mentioned.

Further, in the adhesive layer 1b, various additives (for example, coloring agents, tackifiers, extenders, fillers, adhesion-imparting agents, plasticizers, anti-drugs) may be contained in the range which does not impair the effects of the present invention and the like. Aging agent, antioxidant, surfactant, crosslinking agent, etc.).

The thickness of the adhesive layer 1b is not particularly limited, and is preferably about 1 to 50 μm from the viewpoint of preventing the grinding surface of the semiconductor wafer from being damaged and fixing the sheet-like resin composition 2. It is preferably 5 to 40 μm, more preferably 10 to 30 μm.

(Manufacturing method of laminated sheet)

The laminated sheet 10 of the present embodiment can be produced by, for example, separately preparing the back grinding tape 1 and the sheet-shaped resin composition 2 in advance, and finally bonding them. Specifically, it can be produced in the following order.

First, the substrate 1a can be formed into a film by a conventionally known film forming method. As the film making side The method may, for example, be a calendering film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, or the like.

Next, an adhesive composition for forming an adhesive layer is prepared. The adhesive composition is formulated with a resin or an additive as described in the adhesive layer. After the prepared adhesive composition is applied onto the substrate 1a to form a coating film, the coated film is dried under specific conditions (heat-crosslinking if necessary) to form an adhesive layer 1b. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be carried out, for example, at a drying temperature of 80 to 150 ° C and a drying time of 0.5 to 5 minutes. Further, after the adhesive composition is applied onto the separator to form a coating film, the coating film is dried under the above drying conditions to form the adhesive layer 1b. Thereafter, the adhesive layer 1b and the separator are bonded together to the substrate 1a. Thereby, the back grinding belt 1 including the base material 1a and the adhesive layer 1b was produced.

The sheet-like resin composition 2 is produced, for example, in the following manner. First, an adhesive composition as a material for forming the sheet-like resin composition 2 is prepared. As described in the section of the sheet-like resin composition, a thermoplastic component or an epoxy resin, various additives, and the like are blended in the adhesive composition.

Next, the prepared adhesive composition is applied onto a substrate separator to have a specific thickness to form a coating film, and then the coating film is dried under specific conditions to form a sheet-like resin composition. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions are carried out, for example, at a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes. Further, after the adhesive composition is applied onto the separator to form a coating film, the coating film is dried under the above drying conditions to form a sheet-like resin composition. Thereafter, the sheet-like resin composition and the separator are attached together to the substrate separator.

Then, the separator is peeled off from the back side grinding belt 1 and the sheet-like resin composition 2, and the sheet-like resin composition and the pressure-sensitive adhesive layer are bonded to each other. Fitting example This can be done by crimping. In this case, the laminating temperature is not particularly limited, and is, for example, preferably from 30 to 100 ° C, more preferably from 40 to 80 ° C. Further, the linear pressure is not particularly limited, and is, for example, preferably 0.98 to 196 N/cm, more preferably 9.8 to 98 N/cm. Next, the substrate separator on the sheet-like resin composition was peeled off to obtain a laminated sheet of the present embodiment.

<Method of Manufacturing Semiconductor Device>

In the present embodiment, the back surface of the semiconductor wafer is ground using a laminated sheet having a sheet-like resin composition laminated on the back grinding belt, and then the dicing on the dicing tape and the pick-up of the semiconductor element are performed, and finally, The semiconductor component is mounted on the adherend.

A representative step of the embodiment includes a bonding step of bonding a circuit surface on which a connection member of a semiconductor wafer is formed and a sheet-like resin composition of the laminate; the grinding step is performed Performing a grinding process on the back surface of the semiconductor wafer; and fixing the sheet-like resin composition and the semiconductor wafer together from the back grinding tape, and attaching the semiconductor wafer to the dicing tape; A semiconductor element in which the semiconductor wafer is diced to form the sheet-like resin composition, and a pick-up step of peeling off the semiconductor element with the sheet-like resin composition from the dicing tape; In the connecting step, the space between the adherend and the semiconductor element is filled with the sheet-like resin composition, and the semiconductor element and the adherend are electrically connected via the connecting member. In the present embodiment, the semiconductor element to which the sheet-like resin composition is attached can be prepared by going to the above-described pickup step.

[Finishing step]

In the bonding step, the circuit surface 3a of the semiconductor wafer 3 on which the connecting member 4 is formed is bonded to the sheet-like resin composition 2 of the laminated sheet 10 (see FIG. 2A).

(semiconductor wafer)

A plurality of connecting members 4 are formed on the circuit surface 3a of the semiconductor wafer 3 (see FIG. 2A). The material of the connecting member such as a bump or a conductive material is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal material. A solder (alloy) such as a tin-zinc-bismuth metal material, a gold-based metal material, or a copper-based metal material. The height of the connecting member is also dependent on the application, and is generally about 15 to 100 μm. Of course, the heights of the respective connecting members in the semiconductor wafer 3 may be the same or different.

(fit)

First, the separator arbitrarily provided on the sheet-like resin composition 2 of the laminated sheet 10 is appropriately peeled off, and as shown in FIG. 2A, the circuit surface 3a of the semiconductor wafer 3 on which the connecting member 4 is formed and the sheet-like resin are formed. The composition 2 is aligned, and the sheet-like resin composition 2 is bonded (mounted) to the semiconductor wafer 3.

The method of bonding is not particularly limited, and is preferably a method of crimping. The pressure bonding is usually performed by pressing a pressure of a known pressing device such as a pressure roller, preferably 0.1 to 1 MPa, more preferably 0.3 to 0.7 MPa. At this time, it is also possible to press it while heating to about 40 to 100 °C. Further, in order to improve the adhesion, it is also preferred to press under pressure (1 to 1000 Pa).

[grinding step]

In the grinding step, the surface of the semiconductor wafer 3 opposite to the circuit surface 3a (that is, the back surface) 3b is ground (see FIG. 2B). The thin processing machine used for the back grinding of the semiconductor wafer 3 is not particularly limited, and examples thereof include a grinding machine (back grinding machine), a polishing pad, and the like. Further, back grinding can be performed by a chemical method such as etching. The back grinding is performed until the semiconductor wafer has a desired thickness (for example, 700 to 25 μm).

[fixed step]

After the grinding step, the semiconductor wafer 3 is peeled off from the back grinding tape 1 in a state in which the sheet-like resin composition 2 is bonded, and the semiconductor wafer 3 is bonded to the dicing tape 11 (see FIG. 2C). At this time, the back surface 3b of the semiconductor wafer 3 is bonded to the adhesive layer 11b of the dicing tape 11 so as to face each other. Therefore, the sheet-like resin composition 2 bonded to the circuit surface 3a of the semiconductor wafer 3 is exposed. Further, the dicing tape 11 has a structure in which an adhesive layer 11b is laminated on the substrate 11a. As the substrate 11a and the adhesive layer 11b, the above-described back grinding can be used. It is preferably produced by the components and the production method shown in the item 1 of the tape 1 and the adhesive layer 1b.

When the semiconductor wafer 3 is peeled off from the back-grinding tape 1, when the adhesive layer 1b has radiation curability, the adhesive layer 1b is irradiated with radiation to cure the adhesive layer 1b, whereby peeling can be easily performed. The amount of radiation to be irradiated may be appropriately set in consideration of the type of radiation to be used, the degree of hardening of the adhesive layer, and the like.

In the laminated sheet of the present embodiment, it is preferable that the sheet-like resin composition has a peeling force of 0.03 to 0.10 N/20 mm from the back grinding belt. By such a light peeling force, it is possible to prevent breakage or deformation of the sheet-like resin composition from peeling of the tape for back grinding, and to prevent deformation of the semiconductor wafer.

The peeling force was measured by cutting a sample having a width of 20 mm from the laminated sheet and attaching it to a mirror-finished wafer placed on a hot plate at 40 °C. The peeling force was measured using a tensile tester for about 30 minutes. The measurement conditions were a peeling angle: 90° and a tensile speed: 300 mm/min. Further, the measurement of the peeling force was carried out in an environment of a temperature of 23 ° C and a relative humidity of 50%. However, when the adhesive layer is of an ultraviolet curing type, it is attached to the mirror wafer under the same conditions as described above, and after being left for about 30 minutes, the ultraviolet irradiation conditions are set as described below, and the laminated sheet side is set as described below. Ultraviolet irradiation was performed, and the peeling force at this time was measured.

<Ultraviolet irradiation conditions>

Ultraviolet (UV) irradiation device: high pressure mercury lamp

Accumulated light amount by ultraviolet irradiation: 500mJ/cm ²

Output: 75W

Irradiation intensity: 150mW/cm ²

[Cutting step]

In the dicing step, the semiconductor wafer 3 and the sheet-like resin composition 2 are diced, as shown in FIG. 2D, based on the dicing position determined by direct light, indirect light, infrared ray, or the like. A semiconductor element 5 having a diced sheet-like resin composition. By passing In the dicing step, the semiconductor wafer 3 is cut into a specific size and singulated (small pieces) to fabricate a semiconductor wafer (semiconductor element) 5. The semiconductor wafer 5 obtained here is integrated with the sheet-like resin composition 2 cut into the same shape. The dicing system is performed on the circuit surface 3a of the semiconductor wafer 3 to which the sheet-like resin composition 2 is bonded, in accordance with a conventional method.

In this step, for example, a cutting method called full cutting by cutting the dicing tape 11 by a dicing blade can be employed. The dicing apparatus used in this step is not particularly limited, and those known in the art can be used. Further, since the semiconductor wafer is fixed by the dicing tape 11 with excellent adhesion, it is possible to suppress wafer defects or wafer bulging, and it is also possible to suppress breakage of the semiconductor wafer. In addition, when the sheet-like resin composition is formed of a resin composition containing an epoxy resin, even if it is cut by dicing, it is possible to suppress or prevent the sheet-like resin which produces the sheet-like resin composition on the cut surface. The paste of the composition overflows. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (adhesion) to each other, and the following pick-up can be performed more satisfactorily.

Further, in the case where the dicing band is expanded after the dicing step, the expansion can be carried out using a previously known expansion device. The expansion device has an annular outer ring that can press the dicing tape downward through the dicing ring, and an inner ring that has a smaller diameter than the outer ring and supports the dicing band. By this expansion step, adjacent semiconductor wafers can be prevented from coming into contact with each other and broken in the pickup step described below.

[pickup step]

In order to recover the semiconductor wafer 5 which is then fixed to the dicing tape 11, as shown in FIG. 2E, the semiconductor wafer 5 with the sheet-like resin composition 2 is picked up, and the laminate of the semiconductor wafer 5 and the sheet-like resin composition 2 is laminated. A is peeled off from the dicing tape 11.

The picking method is not particularly limited, and various conventionally known methods can be employed. For example, a method in which each semiconductor wafer is lifted up from the substrate side of the dicing tape by a needle, and the semiconductor wafer to be lifted is picked up by a pick-up device. Further, the semiconductor wafer 5 picked up is integrated with the sheet-like resin composition 2 bonded to the circuit surface 3a to form a laminated body A.

In the case where the adhesive layer 11b is of an ultraviolet curing type, the pickup is attached to the adhesive. The layer 11b is irradiated with ultraviolet rays. Thereby, the adhesion of the adhesive layer 11b to the semiconductor wafer 5 is lowered, and the semiconductor wafer 5 is easily peeled off. As a result, the semiconductor wafer 5 can be picked up without damaging it. The conditions such as the irradiation intensity and the irradiation time when the ultraviolet ray is irradiated are not particularly limited, and may be appropriately set as necessary. Further, as the light source for ultraviolet irradiation, for example, a low pressure mercury lamp, a low pressure high output lamp, a medium pressure mercury lamp, an electrodeless mercury lamp, a xenon flash lamp, an excimer lamp, an ultraviolet LED, or the like can be used.

[installation steps]

In the mounting step, the mounting position of the semiconductor element 5 is obtained in advance by direct light, indirect light, infrared light or the like, and the space between the adherend 16 and the semiconductor element 5 is made into a sheet-like resin in accordance with the obtained mounting position. The composition 2 is filled, and the semiconductor element 5 is electrically connected to the adherend 16 via the connecting member 4 (refer to FIG. 2F). Specifically, the semiconductor wafer 5 of the laminated body A is fixed to the adherend 16 in a conventional manner in such a manner that the circuit surface 3a of the semiconductor wafer 5 faces the adherend 16 . For example, the connecting member (bump) 4 formed on the semiconductor wafer 5 is brought into contact with the bonding conductive material 17 (solder or the like) adhered to the bonding pad of the adherend 16, and the conductive material is melted while being pressed. The semiconductor wafer 5 can be electrically connected to the adherend 16 to fix the semiconductor wafer 5 to the adherend 16. The sheet-like resin composition 2 is attached to the circuit surface 3a of the semiconductor wafer 5, so that the space between the semiconductor wafer 5 and the adherend 16 is electrically connected while the semiconductor wafer 5 is electrically connected to the adherend 16. The resin composition 2 was filled.

In the present embodiment, the volume V required for the sheet-like resin composition 2 and the space T required to fill the space between the adherend 16 and the semiconductor element 5 satisfy the following formula.

0.85T≦V≦1.25T

(wherein T = AW, A is the apparent volume of the space between the semiconductor element and the adherend after the joining step, and W is a structure existing in the space between the semiconductor element and the adherend in the space Volume

Due to the volume V of the sheet-like resin composition 2 and the filled adherend 16 and the semiconductor element 5 The volume T required for the space between them satisfies a specific relationship, so that the space between the mounted adherend 16 and the semiconductor element 5 can be appropriately filled by the sheet-like resin composition, and as a result, the sheet can be made The resin composition 2 is stabilized from the overflow shape of the semiconductor element 5. In the region of V < 0.85 T, the volume of the sheet-like resin composition 2 is too small to cause an unfilled portion, resulting in generation of voids. In the region of V > 1.25 T, the volume of the sheet-like resin composition 2 is too large to cause an excessive amount of overflow.

According to the above relation, the volume T required to fill the space between the adherend 16 and the semiconductor element 5 is obtained by T = A - W. A is an apparent volume of a space between the semiconductor element and the adherend after the bonding step, and can be obtained by multiplying a plan view area of the semiconductor element by a gap distance between the mounted semiconductor element and the adherend. Therefore, when A is obtained, the volume of the structure existing in the space between the semiconductor element and the adherend is ignored. W is the volume occupied by the structure existing in the space between the semiconductor element and the adherend in the space, and corresponds to the sum of the volumes of the structures existing in the space.

The structure which is present in the space between the semiconductor element and the adherend is not particularly limited, and examples thereof include a connection member 4 such as a bump formed on the semiconductor element 5, and a bonding conductive material 17 provided on the adherend 16. Wiring or resist (not shown) or the like provided on the adherend. Regarding the volume of these, since various sizes can be obtained at the design stage of the package structure, it can be easily calculated based on the dimensions.

In general, the heating conditions in the mounting step are 100 to 300 ° C, and the pressing conditions are 0.5 to 500 N. Further, the thermocompression bonding process in the mounting step may be performed in multiple stages. For example, it can be processed at 150 ° C, 100 N for 10 seconds, and then at 300 ° C, 100 to 200 N for 10 seconds. By performing the thermocompression bonding treatment in multiple stages, the resin between the connecting member and the mat can be efficiently removed, and a better intermetallic joining can be obtained.

As the adherend 16 , various substrates such as a semiconductor wafer, a lead frame, or a circuit board (such as a printed circuit board) and other semiconductor elements can be used. The material of the substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. As the plastic substrate, for example, an epoxy substrate or a bis-xenylene diimide III can be cited. A substrate, a polyimide substrate, a glass epoxy substrate, or the like. The number of semiconductor elements mounted on one of the adherends is not limited, and may be one or plural. The sheet-like resin composition 2 can also be preferably applied to a wafer wafer wafer process in which a plurality of semiconductor wafers are mounted on a semiconductor wafer.

Further, in the mounting step, one or both of the connecting member and the conductive material are melted, and the bump 4 of the connecting member forming surface 3a of the semiconductor wafer 5 is connected to the conductive material 17 on the surface of the adherend 16 . The temperature at which the bump 4 and the conductive material 17 are melted is usually about 260 ° C (for example, 250 ° C to 300 ° C). The laminated sheet of the present embodiment can be formed into a sheet-like resin composition 2 by an epoxy resin or the like, and can have a heat resistance which can withstand the high temperature in the mounting step.

[Sheet resin composition hardening step]

After the semiconductor element 5 is electrically connected to the adherend 16, the sheet-like resin composition 2 is cured by heating. Thereby, the surface of the semiconductor element 5 can be protected, and the connection reliability between the semiconductor element 5 and the adherend 16 can be ensured. The heating temperature for curing the sheet-like resin composition is not particularly limited, and may be about 150 to 250 °C. Further, in the case where the sheet-like resin composition is cured by the heat treatment in the mounting step, this step can be omitted.

[sealing step]

Next, in order to protect the entire semiconductor device 20 having the mounted semiconductor wafer 5, a sealing step may be performed. The sealing step is carried out using a sealing resin. The sealing condition at this time is not particularly limited, and the sealing resin is usually thermally cured by heating at 175 ° C for 60 seconds to 90 seconds. However, the present invention is not limited thereto, and for example, it can be 165 ° C. Curing for several minutes at ~185 °C.

The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from known sealing materials such as sealing resins, and more preferably an insulating resin having elasticity. As the sealing resin, for example, a resin containing an epoxy resin can be cited Composition and the like. Examples of the epoxy resin include the epoxy resins exemplified above. In addition, as a resin component, a sealing resin obtained from a resin composition containing an epoxy resin may contain, in addition to an epoxy resin, a thermosetting resin (such as a phenol resin) other than an epoxy resin, or a thermoplastic resin. . In addition, the phenolic resin can also be used as a curing agent for an epoxy resin, and examples of such a phenolic resin include the above-exemplified phenolic resins.

[semiconductor device]

Next, a description will be given of a semiconductor device obtained by using the laminated sheet with reference to the drawings (see FIG. 2F). In the semiconductor device 20 of the present embodiment, the semiconductor element 5 and the adherend 16 are electrically connected via a bump (connection member) 4 formed on the semiconductor element 5 and a conductive material 17 provided on the adherend 16. Moreover, the sheet-like resin composition 2 is disposed between the semiconductor element 5 and the adherend 16 so as to fill the space. Since the semiconductor device 20 is obtained by the above-described manufacturing method using the specific sheet-like resin composition 2, a good electrical connection is achieved between the semiconductor element 5 and the adherend 16. Therefore, the surface protection of the semiconductor element 5, the filling of the space between the semiconductor element 5 and the adherend 16 , and the electrical connection between the semiconductor element 5 and the adherend 16 are respectively sufficient levels, and the semiconductor device 20 can be used. Play a higher level of reliability.

<Second embodiment>

In the first embodiment, a semiconductor wafer in which a circuit is formed on one side is used. In the present embodiment, a semiconductor wafer in which a circuit is formed on both sides is used to manufacture a semiconductor device. Further, since the semiconductor wafer used in the present embodiment has a target thickness, the grinding step is omitted. Therefore, as the laminated sheet in the second embodiment, a laminated sheet having a dicing tape and a specific sheet-like resin composition laminated on the dicing tape is used. As a representative step before the connecting step in the second embodiment, a preparation step of preparing the laminated sheet; and a bonding step of forming a semiconductor wafer having a circuit surface having a connecting member on both sides is exemplified. Bonding to the sheet-like resin composition of the laminated sheet; a dicing step of dicing the semiconductor wafer to form a semiconductor element with the sheet-like resin composition And a pick-up step of peeling off the semiconductor element with the sheet-like resin composition described above from the laminated sheet. Thereafter, a semiconductor device is manufactured by performing the steps subsequent to the connection step.

[Preparation steps]

In the preparation step, a laminated sheet having a dicing tape 41 and a specific sheet-like resin composition 42 laminated on the dicing tape 41 is prepared (see FIG. 3A). The dicing tape 41 is provided with a base material 41a and an adhesive layer 41b laminated on the base material 41a. Further, the sheet-like resin composition 42 is laminated on the adhesive layer 41b. The base material 41a, the adhesive layer 41b, and the sheet-like resin composition 42 of the dicing tape 41 can be the same as those of the first embodiment.

[Finishing step]

In the bonding step, as shown in FIG. 3A, the semiconductor wafer 43 having the circuit surface having the connection member 44 formed on both sides thereof is bonded to the sheet-like resin composition 42 of the laminated sheet. Further, since the strength of the semiconductor wafer which is thinned to a specific thickness is weak, the semiconductor wafer may be fixed to a support such as a support glass (not shown) via a temporary fixing material for reinforcement. In this case, the method may further include the step of peeling off the support and the temporary fixing material after bonding the semiconductor wafer and the sheet-like resin composition. Which of the circuit surfaces of the semiconductor wafer 43 is bonded to the sheet-like resin composition 42 may be changed according to the structure of the intended semiconductor device.

The semiconductor wafer 43 has the same circuit surface as the circuit surface having the connection member 44 on both surfaces, and is the same as the semiconductor wafer of the first embodiment. The connecting members 44 on both sides of the semiconductor wafer 43 may or may not be electrically connected to each other. The electrical connection of the connecting members 44 to each other may be exemplified by a connection via a through hole such as a TSV (Through-Silicon Via). As the bonding conditions, the bonding conditions of the first embodiment can be preferably used.

[Cutting step]

In the dicing step, the semiconductor wafer 43 and the sheet-like resin composition 42 are diced to form a semiconductor element 45 to which the sheet-like resin composition is attached (see FIG. 3B). Make For the dicing conditions, the respective conditions in the first embodiment can be preferably employed. Further, since the dicing system is performed on the circuit surface on which the semiconductor wafer 43 is exposed, it is easy to detect the dicing position, but it is also possible to illuminate the light to confirm the dicing position and then perform dicing.

[pickup step]

In the pickup step, the semiconductor element 45 to which the above-mentioned sheet-like resin composition 42 is attached is peeled off from the above-described dicing tape 41 (Fig. 3C). As the pickup conditions, the respective conditions in the first embodiment can be preferably employed.

In the laminated sheet of the present embodiment, the peeling force of the sheet-like resin composition from the dicing tape is preferably 0.03 to 0.10 N/20 mm. Thereby, picking up of the semiconductor element with the sheet-like resin composition can be easily performed.

[installation steps]

In the mounting step, the space between the adherend 66 and the semiconductor element 45 is filled with the sheet-like resin composition 42, and the semiconductor element 45 and the adherend 66 are electrically connected via the connecting member 44 (refer to FIG. 3D). . The conditions in the mounting step can be preferably those in the first embodiment. Thereby, the semiconductor device 60 of this embodiment can be manufactured.

In the same manner as in the first embodiment, the sheet-like resin composition curing step and the sealing step may be carried out as needed.

<Third embodiment>

In the first embodiment, the back grinding belt is used as the constituent member of the laminated sheet. However, in the present embodiment, the adhesive layer of the back grinding belt is not provided, and the base material is used alone. Therefore, the laminated sheet of the present embodiment is in a state in which a sheet-like resin composition is laminated on a substrate. In the present embodiment, the grinding step can be carried out arbitrarily, but the ultraviolet irradiation before the picking step is not performed because the adhesive layer is omitted. A specific semiconductor device can be manufactured by performing the same steps as those of the first embodiment except for these points.

<Other Embodiments>

In the first embodiment to the third embodiment, the use of the dicing in the dicing step is employed. The dicing of the blade, but instead of the so-called stealth dicing, that is, the modified portion is formed inside the semiconductor wafer by laser irradiation, and the semiconductor wafer is divided and singulated along the modified portion. .

[Examples]

Hereinafter, preferred embodiments of the invention will be described by way of example and in detail. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the invention to the above description unless otherwise specified. In addition, the case of a part is a weight part.

[Examples 1 to 4 and Comparative Examples 1 to 3]

<Production of sheet-like resin composition>

The following components were dissolved in methyl ethyl ketone at a ratio shown in Table 1 to prepare a solution of an adhesive composition having a solid content concentration of 45 to 60% by weight.

Elastomer 1: an acrylate-based polymer containing ethyl acrylate-butyl acrylate-acrylonitrile as a main component (trade name "SG-P3", manufactured by Nagase ChemteX Co., Ltd.)

Elastomer 2: an acrylate-based polymer containing butyl acrylate-acrylonitrile as a main component (trade name "SG280-EK23", manufactured by Nagase ChemteX Co., Ltd.)

Epoxy resin 1: trade name "Epikote 828", manufactured by JER Co., Ltd.

Epoxy resin 2: trade name "Epikote 1004", manufactured by JER Co., Ltd.

Phenolic resin: trade name "MEH-7851H", manufactured by Minghe Chemical Co., Ltd.

Inorganic filler: spherical cerium oxide (trade name "YV180C-MJJ", manufactured by Admatechs Co., Ltd., average particle diameter 0.18 μm (180 nm))

Thermal hardening promoting catalyst: Imidazole catalyst (trade name "2PHZ-PW", manufactured by Shikoku Chemicals Co., Ltd.)

The solution of the adhesive composition was applied to a release-treated film formed of a polyethylene terephthalate film having a thickness of 38 μm which was subjected to polyfluorination release treatment as a release liner (separator). , dried at 130 ° C for 2 minutes, thereby producing a sheet of the thickness shown in Table 1. Resin composition.

"Evaluation"

<Method for Measuring Melt Viscosity>

In the measurement of the melt viscosity, the sheet-like resin composition was used as a sample without heat treatment, and was carried out by a parallel plate method using a rheometer (manufactured by HAAKE Co., Ltd., RS-1). Specifically, the conditions are as follows: a gap of 100 μm, a rotating plate diameter of 20 mm, a rotation speed of 5 s ^-1 , and a temperature increase rate of 10 ° C/min. The temperature is raised from 80 ° C, and the viscosity is increased by the curing reaction of the sheet-like resin composition. Until the temperature at which the final rotating plate cannot rotate (both 200 ° C or higher). The lowest value of the melt viscosity at 80 ° C to 200 ° C at this time was read to find the lowest melt viscosity. The results are shown in Table 7.

<Installation Evaluation>

A sheet-like resin composition of the same size was attached to a wafer of 7.3 mm square ("WALT-TEG MB50-0101JY", manufactured by WALTS Co., Ltd.), and sample A was used. The attachment conditions were set to a temperature of 80 ° C under vacuum: 100 Pa, and a pressure of 0.5 MPa.

Next, Sample A was mounted on a substrate for mounting electrodes ("WALT-KIT MB50-0102JY_CR", manufactured by WALTS Co., Ltd.). The installation was carried out using a flip chip bonding machine (FC3000W) from TORAY ENGINEERING. The installation conditions are based on the load: 0.5MPa, kept at 200 ° C for 10 seconds, at 260 ° C Hold for 10 seconds.

The apparent volume A of the space between the wafer and the mounting substrate at the time of mounting, the volume W1 of the structure on the wafer, the volume W2 of the structure on the substrate, and the volume V of the sheet-like resin composition are as shown in Table 2 below. ~6 is shown.

According to the above, the volume T required to fill the space between the wafer and the mounting substrate is determined by T=A-W1-W2-W3, which is 2.17 mm ³ (the values of Table 7 are rounded to the decimal point 3) Bit).

(void evaluation)

The obtained sample after mounting was polished in parallel with the wafer to expose the sheet-like resin composition. When the void state of the exposed resin portion was confirmed by an optical microscope (200 times), the occurrence of voids (maximum diameter: more than 3 μm) was not confirmed as "○", and even if it was confirmed at one site, voids were generated. The case is set to "X" and evaluated. The results are shown in Table 7.

(overflow evaluation)

When the sample after the mounting of the sheet-like resin composition from the wafer end portion was 300 μm or less, the amount of the sheet-like resin composition was set to be "○", and the case where the amount was more than 300 μm was set to "x". . The results are shown in Table 7.

It can be seen from Table 1 that the generation of voids can be suppressed in all the embodiments, and after installation The overflow shape of the sheet-like resin composition is stabilized. On the other hand, in Comparative Examples 1 and 2, although the overflow shape was good, the void was confirmed. The reason for this is considered to be that the lowest melt viscosity in Comparative Example 1 is too high, and the followability of the sheet-like resin composition to the surface unevenness is lowered. The reason is considered to be that, in Comparative Example 2, the volume V of the sheet-like resin composition is in a region of V < 0.85 T, and the volume of the sheet-like resin composition is too small to cause an unfilled portion, resulting in generation of voids. Further, in Comparative Example 3, although the void evaluation was good, the overflow evaluation was inferior. The reason for this is considered to be that the volume V of the sheet-like resin composition is in a region of V>1.25 T, and the volume of the sheet-like resin composition is too large to cause an excessive amount of overflow.

2‧‧‧Flake resin composition

4‧‧‧Connecting components

5‧‧‧Semiconductor wafer (semiconductor component)

16‧‧‧Adhesive body

17‧‧‧Electrical materials

20‧‧‧Semiconductor device

Claims (4)

A method of manufacturing a semiconductor device comprising: a semiconductor device to which an adherend, a semiconductor element electrically connected to the adherend, and a sheet-like resin composition filling a space between the adherend and the semiconductor element; a manufacturing method, comprising the steps of: preparing a semiconductor element with a sheet-like resin composition, which is obtained by laminating a sheet-like resin composition to a semiconductor element; and a joining step of bonding the above-mentioned adherend The space between the semiconductor elements is filled with the sheet-like resin composition, and the semiconductor element is electrically connected to the adherend; and the sheet-like resin composition has a minimum melt viscosity of 100 Pa at 80 ° C to 200 ° C. . s above and 3000Pa. In the following, the volume T of the sheet-like resin composition and the volume T required to fill the space between the adherend and the semiconductor element satisfy the following formula: 0.85 T ≦ V ≦ 1.25 T (where T = AW) A is the apparent volume of the space between the semiconductor element and the adherend after the above connecting step, and W is the volume occupied by the structure existing in the space between the semiconductor element and the adherend. The method of producing a semiconductor device according to claim 1, wherein the sheet-like resin composition contains an inorganic filler, and the inorganic filler has an average particle diameter of 10 nm or more and 500 nm or less. The method of producing a semiconductor device according to claim 2, wherein the content of the inorganic filler in the sheet-like resin composition is 70% by weight or less. The method of producing a semiconductor device according to any one of claims 1 to 3, wherein the sheet-like resin composition contains an acrylic resin having a weight average molecular weight of 5 × 10 ⁵ or more.