TW201634649A - Sheet-like resin composition, laminate sheet, and semiconductor device production method - Google Patents

Abstract

Provided is a sheet-like resin composition with which it is possible to sufficiently suppress voids at the interface of the sheet-like resin composition and an adherend and with which it is possible to suppress excessive protrusion at the time of mounting. Also provided are a laminate sheet that is provided with the sheet-like resin composition, and a semiconductor device production method. The present invention is a heat-curable sheet-like resin composition that is for filling the space between an adherend and a semiconductor element that is electrically connected to the adherend. The sheet-like resin composition has a pre-heat-curing minimum melt viscosity of 2000 Pa.s or more at 80 DEG C-200 DEG C and, with regard to measurement by DSC, when the total calorific value of the composition during a temperature increase process from -10 DEG C to 350 DEG C at a temperature increase speed of 10 DEG C/min is Qt and the total calorific value of the composition during a heating process wherein the composition is heated for 10 seconds at 250 DEG C is Qh, the sheet-like resin composition has a reaction rate R, as expressed by the following formula, of 50% or less. R = {(Qt-Qh/Qt)}*100(%).

Description

Sheet-like resin composition, laminated sheet, and method of manufacturing semiconductor device

The present invention relates to a sheet-like resin composition, a laminated sheet, and a method of producing a semiconductor device.

In recent years, the semiconductor device and its package have been required to be thinner and smaller. As a method for the same, a semiconductor device in which a semiconductor element such as a semiconductor wafer is mounted on a substrate by flip chip bonding is widely used. The flip chip connection is a method in which the semiconductor wafer is fixed to the attached body via a bump electrode formed on the circuit surface of the semiconductor wafer in a state in which the circuit surface of the semiconductor wafer faces the electrode forming surface of the attached body (face down). . In the flip chip mounting of the semiconductor element to the attached body, the solder bumps or the like provided on the semiconductor element are melted to electrically connect the two.

After the flip chip connection, in order to secure the surface of the semiconductor element or the connection reliability between the semiconductor element and the substrate, the space between the semiconductor element and the substrate is filled with a sealing resin. As such a sealing resin, a liquid sealing resin (sheet-like resin composition) is widely used, but it is difficult to adjust an injection position or an injection amount by a liquid sealing resin. Therefore, the industry has proposed a technique of filling a space between a semiconductor element and a substrate using a sheet-like sealing resin (Patent Document 1).

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 44387973

In the above-described process, since the sheet-like resin composition bonded to the semiconductor element is bonded to the adherend, it is required to closely contact the sheet-like resin composition in conformity with the unevenness of the surface of the attached body. However, as the number of three-dimensional structures such as electrodes on the attached body increases or the circuit is narrowed, the degree of adhesion of the sheet-like resin composition to the attached body is lowered, and the attached body and the sheet-like resin composition are present. The case where voids (bubbles) are generated at the interface. When such a bubble is present, there is a case where the bubble expands when the pressure reduction treatment or the heat treatment is performed in the subsequent step, and the adhesion between the attached body and the sheet-like resin composition is lowered, and as a result, When the semiconductor element is mounted on the attached body, the connection reliability between the semiconductor element and the attached body is lowered.

On the other hand, the inventors of the present invention have inferred that the pores from the interface are removed or absorbed by pressurization at the time of heat curing of the sheet-like resin composition after the semiconductor element is mounted. However, although it is attempted to reduce or disappear the pores by pressure heat hardening based on the estimation, it is sometimes seen that the pores are not sufficiently suppressed.

In addition, as the size and thickness of the semiconductor device are reduced, it is required that the shape of the sheet-like resin composition after mounting of the semiconductor element is stabilized from the semiconductor element. If the amount of overflow increases, there is a problem that the overflow is caused by contact with other elements or the yield is lowered. In particular, in a new process such as a wafer flip-chip (CoW) process or a wafer flip-chip (CoC) process in which electrodes (TSV (Through Silicon Via)) are penetrated in the thickness direction, a multilayered semiconductor is used. Since the element assembly is adjacent to each other with a small gap, it is required to suppress excessive overflow of the sheet-like resin composition in order to maximize the throughput per unit area of the wafer and improve the yield.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a sheet-like resin composition capable of sufficiently suppressing pores at the interface between an adherend and a sheet-like resin composition and capable of suppressing excessive overflow during mounting and having the same The laminated sheet and the method of manufacturing the semiconductor device.

As a result of intensive studies on the narrowing of the pores during pressurization and heat curing of the sheet-like resin composition, it is considered that the sheet-like resin composition is hardened to some extent by the heat history at the time of installation. The viscosity is increased, which hinders the narrowing of the pores. In the case of flip chip mounting, even for a short period of time (for example, several seconds to about 10 seconds), the temperature is higher than the temperature of the temperature of the sheet-like resin composition (for example, 170 to 180 ° C) (for example, 250). ~260 ° C), it is presumed that the heat load during the mounting causes thermal hardening of the sheet-like resin composition.

The present inventors have further studied based on the above findings, and as a result, have found that the above object can be attained by the following constitution, and the present invention is completed.

That is, the present invention relates to a sheet-like resin composition for laminating a sheet-like resin composition of a space between an attached body and a semiconductor element electrically connected to the attached body, and the heat is The lowest melt viscosity at 80 ° C to 200 ° C before hardening is 2000 Pa ‧ or more, and the temperature rise rate in DSC (Differential Scanning Calorimetry) is -10 ° C to 350 ° C at 10 ° C / min. The total amount of heat release during the heating process is set to Qt, and when the total amount of heat released during the heating process at 250 ° C for 10 seconds is Qh, the reaction rate R represented by the following formula (hereinafter, also referred to as "reaction" The rate R") is 50% or less.

R={(Qt-Qh/Qt)}×100 (%)

In the sheet-like resin composition, since the lowest melt viscosity at 80 ° C to 200 ° C before the heat curing is 200 Pa ‧ or more, the sheet-like resin composition exhibits a moderate viscosity and can suppress the sheet-like resin. The composition overflows excessively from the space between the semiconductor element and the object to be attached. When the minimum melt viscosity is too low, the amount of deformation of the sheet-like resin composition at the time of mounting increases and the overflow becomes excessive.

Moreover, since the reaction rate R of the sheet-like resin composition is 50% or less, it is also possible to borrow The heat hardening reaction of the sheet-like resin composition is suppressed by the heat history at the time of mounting, whereby excessive increase in viscosity can be prevented. As a result, the pressure in the pressure-heat-hardening step as a subsequent step is such that the pressure is propagated through the sheet-like resin composition to the pores, and the pores can be narrowed. When the reaction rate R exceeds 50%, the thermosetting reaction of the sheet-like resin composition proceeds excessively, and the viscosity becomes too high, which hinders the narrowing of the pores in the subsequent pressure-heat-hardening step.

In the sheet-like resin composition, it is preferred that the peak temperature during the temperature rise in the DSC measurement is 180 ° C or higher. When the peak temperature indicating the exothermic peak during the temperature rise is 180 ° C or more, it is difficult to carry out the thermosetting reaction of the sheet-like resin composition if it is not higher, in other words, the sheet can be suppressed even after a certain degree of heat history during the mounting. The heat hardening reaction of the resin composition proceeds. Thereby, it is possible to prevent an excessive increase in viscosity at the time of mounting, and it is possible to efficiently measure the narrowness of the pores in the pressure heating and hardening step.

The sheet-like resin composition preferably contains a thermosetting-promoting catalyst. Thereby, the suppression of the viscosity increase by the heat history of the sheet-like resin composition and the hardening reactivity can be achieved at a high level.

The present invention also includes a laminated sheet comprising: a pressure-sensitive adhesive tape having a substrate and an adhesive layer provided on the substrate; and the sheet-like resin composition laminated on the pressure-sensitive adhesive layer.

By using the sheet-like resin composition and the adhesive tape integrally, it is possible to improve the efficiency of the manufacturing process of the semiconductor wafer from the processing to the mounting of the semiconductor element.

The adhesive tape may be any one of a back grinding tape or a cutting tape for a semiconductor wafer.

Moreover, the present invention relates to a method of manufacturing a semiconductor device comprising: an attached body, a semiconductor element electrically connected to the attached body, and a sheet-like resin filling a space between the attached body and the semiconductor element; A method of fabricating a semiconductor device of the composition, and comprising the steps of: a step of bonding a sheet-like resin composition to a semiconductor element having a sheet-like resin composition obtained by laminating the above-mentioned semiconductor element; and filling a space between the attached body and the semiconductor element by using the sheet-like resin composition And a step of connecting the semiconductor element to the object to be attached; and a step of heating and hardening the sheet-like resin composition under pressure heating.

In the production method, since the sheet-like resin composition having the specific minimum melt viscosity and the reaction rate R is used, it is possible to suppress the increase in the viscosity of the sheet-like resin composition by the load of the heat history at the time of mounting. In the subsequent pressurization heat hardening step, the pores are narrowed, and excessive overflow of the sheet-like resin composition at the time of mounting can be prevented, so that a highly reliable semiconductor device can be efficiently manufactured.

1‧‧‧ Cutting tape

1a‧‧‧Substrate

1b‧‧‧Adhesive layer

2‧‧‧Flake resin composition

3‧‧‧Semiconductor wafer

3a‧‧‧ circuit surface

3b‧‧‧ circuit surface

4a‧‧‧Connecting members

4b‧‧‧Back electrode

10‧‧‧Laminated sheets

16‧‧‧ Attached

17‧‧‧Electrical materials

20‧‧‧Semiconductor device

31‧‧‧Semiconductor wafer (semiconductor component)

32‧‧‧Semiconductor wafer (semiconductor component)

40‧‧‧Semiconductor device

Fig. 1A is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to an embodiment of the present invention.

Fig. 1B is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to an embodiment of the present invention.

Fig. 1C is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to an embodiment of the present invention.

Fig. 1D is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to an embodiment of the present invention.

Fig. 1E is a schematic cross-sectional view showing a step of a manufacturing step of a semiconductor device according to an embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the drawings, but the present invention is not limited to the embodiments. Furthermore, in part or all of the figure, Parts that are not necessary for the description are omitted, and parts that are enlarged or reduced for ease of explanation are shown.

<First embodiment>

In the embodiment of the present invention, a laminated sheet comprising a dicing tape and a specific sheet-like resin composition laminated on the dicing tape, and a method of manufacturing a semiconductor device using the same are described as an example. . Therefore, in the present embodiment, a dicing tape is used as the adhesive tape.

(layered sheet)

The laminated sheet 10 is provided with a dicing tape 1 and a specific sheet-like resin composition 2 laminated on the dicing tape 1 (see FIG. 1A).

(flaky resin composition)

The sheet-like resin composition 2 in the present embodiment can be suitably used as a film for sealing which fills a space between a semiconductor element mounted on a surface (for example, flip chip mounting) and a to-be-attached body.

The minimum melt viscosity of the sheet-like resin composition 2 at 80 ° C to 200 ° C before the heat curing may be 2000 Pa ‧ or more. Further, the minimum melt viscosity is preferably 2,000 Pa s or more and 6,000 Pa ‧ or less, more preferably 2,000 Pa s or more and 5,000 Pa ‧ or less. By setting the minimum melt viscosity to the above range, it is possible to impart appropriate viscosity to the sheet-like resin composition, and it is possible to suppress excessive overflow of the sheet-like resin composition from the space between the semiconductor element and the object to be attached. When the minimum melt viscosity is too low, the amount of deformation of the sheet-like resin composition at the time of mounting increases and the amount of overflow increases. If the minimum melt viscosity is too high, the joining of the connecting members at the time of mounting becomes insufficient or hinders the installation. The pores in the subsequent press heat hardening step are narrowed.

In the sheet-like resin composition 2, the total amount of heat generation in the temperature rise process from -10 ° C to 350 ° C in the DSC measurement at a temperature increase rate of 10 ° C / min is set to Qt, and is heated at 250 ° C for 10 seconds. When the total amount of heat generation during heating is Qh, the reaction rate R represented by the following formula is preferably 50% or less, more preferably 45% or less.

R={(Qt-Qh/Qt)}×100 (%)

By setting the reaction rate R to the above range, it is possible to suppress the progress of the thermosetting reaction of the sheet-like resin composition by the heat history at the time of mounting, thereby preventing an excessive increase in viscosity. As a result, the pores can be narrowed by propagating the pores via the sheet-like resin composition by the pressurization in the press-heat hardening step as a subsequent step. When the reaction rate R exceeds 50%, the thermosetting reaction of the sheet-like resin composition proceeds excessively, and the viscosity becomes too high, which hinders the narrowing of the pores in the subsequent pressure-heat-hardening step. Further, although the lower limit of the reaction rate R is preferably 0%, it may be 5% or more because of the inevitable heat history.

In the sheet-like resin composition, the peak temperature during the temperature rise in the DSC measurement is preferably 180 ° C or higher, more preferably 195 ° C or higher. When the peak temperature indicating the exothermic peak during the temperature rise is 180 ° C or more, it is difficult to carry out the thermosetting reaction of the sheet-like resin composition if it is not higher, in other words, even after a certain degree of heat history at the time of installation, The progress of the thermosetting reaction of the sheet-like resin composition is suppressed. Thereby, the excessive viscosity can be increased at the time of mounting, and the narrowing of the pores in the pressure heat curing step can be efficiently measured. Further, from the viewpoint of promoting the heat curing reaction of the sheet-like resin composition, the upper limit of the peak temperature is preferably 280 ° C or lower.

Examples of the constituent material of the sheet-like resin composition include an organic component (excluding a solvent) such as a resin component, a thermosetting-promoting catalyst, a crosslinking agent, and other organic additives, or an inorganic component such as an inorganic filler or another inorganic additive. Wait. The resin component may be a combination of a thermoplastic resin and a thermosetting resin. Further, a thermoplastic resin or a thermosetting resin may be used alone.

(thermoplastic resin)

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutylene. Diene resin, polycarbonate resin, thermoplastic Polyimine resin, polyamine resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET (Polyethylene Terephthalate, polyethylene terephthalate) or PBT (Polybutylene Terephthalate, A saturated polyester resin such as polybutylene terephthalate), a polyamidamine resin, or a fluororesin. These thermoplastic resins may be used singly or in combination of two or more. Among these thermoplastic resins, an acrylic resin having a small amount of ionic impurities and high heat resistance and ensuring the reliability of the semiconductor element is particularly preferable.

The weight average molecular weight of the acrylic resin is not particularly limited, but is preferably 3 × 10 ⁵ or more, and preferably 4 × 10 ⁵ or more. Thereby, an appropriate viscosity can be imparted to the sheet-like resin composition, and overflow prevention can be prevented more efficiently. Further, from the viewpoint of suppressing excessive increase in viscosity, the weight average molecular weight is preferably 1 × 10 ⁷ or less.

The acrylic resin is not particularly limited, and one or more of an ester of acrylic acid or methacrylic acid having a linear or branched alkyl group having a carbon number of 30 or less, particularly a carbon number of 4 to 18, may be mentioned. A polymer or the like as a component. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, and a cyclohexyl group. 2-ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, ten Octaalkyl, or eicosyl, and the like.

Further, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, and antibutene. a carboxyl group-containing monomer such as a diacid or a crotonic acid; an acid anhydride monomer such as maleic anhydride or itaconic acid anhydride; 2-hydroxyethyl (meth)acrylate or (meth)acrylic acid 2 -hydroxypropyl ester, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, ( a hydroxyl group-containing monomer such as 12-hydroxylauryl ethyl acrylate or (4-hydroxymethylcyclohexyl)methyl acrylate; styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) propylene Indoleamine a sulfonic acid group-containing monomer such as 2-methylpropanesulfonic acid, (meth)acrylamide, propanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acryloxynaphthalenesulfonic acid or the like Or a phosphate group-containing monomer such as 2-hydroxyethyl acrylate or 2-hydroxyethyl phosphate; a cyano group-containing monomer such as acrylonitrile or the like.

(thermosetting resin)

Examples of the thermosetting resin include a phenol resin, an amine resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a polyoxyxylene resin, or a thermosetting polyimide resin. . These resins may be used singly or in combination of two or more. It is particularly preferable to etch an epoxy resin having a small content of ionic impurities such as semiconductor elements. Further, as the curing agent for the epoxy resin, a phenol resin is preferred.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A can be used. Type, bisphenol AF type, biphenyl type, naphthalene type, hydrazine type, phenol novolak type, o-cresol novolac type, trishydroxyphenylmethane type, tetraphenol ethane type, etc. An epoxy resin such as a functional epoxy resin or a carbendazim type, a triglycidyl isocyanurate type or a glycidylamine type. These may be used singly or in combination of two or more. Among these epoxy resins, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type resin or a tetraphenol ethane type epoxy resin is particularly preferable. The reason for this is that these epoxy resins are rich in reactivity with a phenol resin as a curing agent, and are excellent in heat resistance and the like.

Further, the phenol resin functions as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a hydrazine. A phenol novolak type phenol resin such as a phenol novolak resin, a novolac type phenol resin, or a polyoxystyrene such as polyparaxyl styrene. These may be used singly or in combination of two or more. Among these phenol resins, a phenol novolak resin and a phenol aralkyl resin are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.

Regarding the ratio of the above epoxy resin to the phenol resin, for example, it is more suitable to The epoxy group in the epoxy resin component is blended in an amount of from 0.5 to 2.0 equivalents per 1 equivalent of the hydroxyl group in the phenol resin. More suitably, it is 0.8 to 1.2 equivalents. In other words, when the blending ratio of the two is out of the above range, the sufficient curing reaction does not proceed, and the properties of the cured epoxy resin are likely to deteriorate.

Further, in the present embodiment, a sheet-like resin composition of an epoxy resin, a phenol resin, and an acrylic resin is particularly preferably used. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured. In this case, the blending ratio of the epoxy resin and the phenol resin is 50 to 500 parts by weight based on 100 parts by weight of the acrylic resin component.

(thermal hardening promotes catalyst)

The thermosetting-promoting catalyst of the epoxy resin and the phenol resin is not particularly limited, and can be appropriately selected from known thermal hardening-promoting catalysts. The thermosetting-promoting catalyst can be used singly or in combination of two or more. As a thermosetting-promoting catalyst, for example, an amine-based thermosetting-promoting catalyst, a phosphorus-based thermosetting-promoting catalyst, an imidazole-based thermosetting-promoting catalyst, a boron-based thermosetting-promoting catalyst, and a phosphorus-boron-based thermosetting accelerator can be used. Media and so on.

Among them, the thermosetting-promoting catalyst is preferably an organic compound containing a nitrogen atom in the molecule, and the molecular weight of the organic compound is 50 to 500. Thereby, the degree of progress of the thermosetting reaction accompanying the temperature rise of the sheet-like resin composition can be controlled, and as a result, it is easy to carry out a design having a desired viscosity at each temperature. As an example of the above organic compound, an imidazole-based thermosetting-promoting catalyst can be suitably used. Commercially available products can be used as appropriate, and examples thereof include "2PHZ-PW" (manufactured by Shikoku Chemicals Co., Ltd.).

The content of the thermosetting-promoting catalyst in the case where the sheet-like resin composition contains a thermosetting-promoting catalyst is not particularly limited. In the case where the sheet-like resin composition contains an acrylic resin, the content of the thermosetting-promoting catalyst is preferably 0.1 to 2 parts by weight, more preferably 0.2 to 1.5 parts by weight, per 100 parts by weight of the acrylic resin. By setting it as the said range, hardening reactivity can further be improved, and an excessive viscosity increase can be suppressed more efficiently.

(crosslinking agent)

When the sheet-like resin composition 2 of the present embodiment is crosslinked to some extent in advance, it is preferred to add a polyfunctional compound which reacts with a functional group at the end of the molecular chain of the polymer or the like as a crosslinking agent at the time of production. Thereby, the adhesive property at a high temperature can be improved, and heat resistance can be improved.

As the crosslinking agent, a polyisocyanate compound such as toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, or an adduct of a polyhydric alcohol and a diisocyanate is more preferable. The amount of the crosslinking agent to be added is usually preferably 0.05 to 7 parts by weight based on 100 parts by weight of the polymer. If the amount of the crosslinking agent is more than 7 parts by weight, the subsequent force is lowered, which is not preferable. On the other hand, if it is less than 0.05 part by weight, the cohesive strength is insufficient, which is not preferable. Further, such a polyisocyanate compound and other polyfunctional compounds such as an epoxy resin may be contained at the same time.

(inorganic filler)

Further, in the sheet-like resin composition 2, an inorganic filler can be appropriately formulated. The formulation of the inorganic filler can impart conductivity or improve thermal conductivity, adjust the storage modulus, and the like.

Examples of the inorganic filler include ceramics such as cerium oxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, cerium oxide, cerium carbide, and cerium nitride, and aluminum, copper, silver, gold, nickel, and the like. A metal or an alloy such as chromium, lead, tin, zinc, palladium or solder, and various inorganic powders such as carbon. These may be used singly or in combination of two or more. Among them, cerium oxide, especially molten cerium oxide, can be suitably used.

The average particle diameter of the inorganic filler is preferably 10 nm or more and 500 nm or less, more preferably 30 nm or more and 300 nm or less, and still more preferably 50 nm or more and 200 nm or less in terms of controlling the shaking property. When the average particle diameter of the inorganic filler is less than the above range, aggregation of particles tends to occur, and it is difficult to form a sheet-like resin composition. Further, the flexibility of the sheet-like resin composition is also lowered. On the other hand, when the average particle diameter exceeds the above range, the inorganic particles are likely to be generated in the sheet-like resin composition and Since the joint portion of the attached body bites, the connection reliability of the semiconductor device is lowered. Moreover, the haze is increased due to the coarsening of the particles. Further, in the present invention, inorganic fillers having different average particle diameters from each other may be used in combination with each other. Further, the average particle diameter is a value obtained by a photometric particle size distribution meter (manufactured by HORIBA, device name: LA-910).

The amount of the inorganic filler to be added is preferably 50 to 1000 parts by weight, more preferably 100 to 800 parts by weight, per 100 parts by weight of the resin component. By setting the content of the inorganic filler to the above range, it is possible to impart appropriate viscosity and viscosity changeability to the sheet-like resin composition, and it is possible to more effectively prevent excessive overflow during the mounting and pressurization heat hardening step. The narrowness of the pores.

(other additives)

In addition, in the sheet-like resin composition 2, in addition to the above-mentioned inorganic filler, other additives may be appropriately formulated as needed. Examples of other additives include a flame retardant, a decane coupling agent, and an ion scavenger. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the above decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropyl group. Methyl diethoxy decane, and the like. Examples of the ion trapping agent include hydrotalcites and barium hydroxide. These may be used singly or in combination of two or more.

In the sheet-like resin composition 2, a flux can be easily added in order to easily remove the oxide film on the surface of the solder bump, and a flux can be added. The flux is not particularly limited, and a conventionally known compound having a fluxing action can be used, and examples thereof include bisphenolic acid, adipic acid, acetyl salicylic acid, benzoic acid, diphenyl glycolic acid, and sebacic acid. , benzyl benzoic acid, malonic acid, 2,2-bis(hydroxymethyl)propionic acid, salicylic acid, o-anisic acid, m-hydroxybenzoic acid, succinic acid, 2, 6-Dimethoxymethyl-p-cresol, benzamidine, carbon oxime, propylene dioxime, butyl hydrazine, pentane oxime, salicin, iminodiethylene dioxime, itan II醯肼, lemon triterpenoids, thiocarbamate, benzophenone oxime, 4,4'-oxybisbenzenesulfonylhydrazine and hexamethylene. The amount of the flux to be added may be about 0.1 to 20 parts by weight based on 100 parts by weight of the resin component contained in the sheet-like resin composition.

(Other properties of the sheet-like resin composition)

The water absorption ratio of the sheet-like resin composition 2 before the heat curing at a temperature of 23 ° C and a humidity of 70% is preferably 1% by weight or less, more preferably 0.5% by weight or less. By having the water absorption ratio as described above, the sheet-like resin composition 2 can suppress the absorption of moisture in the sheet-like resin composition 2, and more effectively suppress the occurrence of voids in the semiconductor element 31 at the time of mounting. Further, the lower limit of the water absorption ratio is preferably as small as possible, and is preferably substantially 0% by weight, more preferably 0% by weight.

The thickness of the sheet-like resin composition 2 (the total thickness in the case of the stratification) is not particularly limited, but the strength of the sheet-like resin composition 2 or the filling of the space between the semiconductor element 31 and the adherend 16 is considered. The properties may be 10 μm or more and 100 μm or less. In addition, the thickness of the sheet-like resin composition 2 may be appropriately set in consideration of the gap between the semiconductor element 31 and the adherend 16 or the height of the connecting member.

The sheet-like resin composition 2 of the laminated sheet 10 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the sheet-like resin composition 2 before being supplied to the utility. The separator is peeled off when the semiconductor wafer 3 is bonded to the sheet-like resin composition 2 of the laminated sheet. As the separator, polyethylene terephthalate (PET), polyethylene, polypropylene, or a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent may be used for surface coating. Plastic film or paper.

(cutting tape)

The dicing tape 1 includes a substrate 1a and an adhesive layer 1b laminated on the substrate 1a. The sheet-like resin composition 2 is laminated on the adhesive layer 1b. Further, as shown in FIG. 1A, the sheet-like resin composition 2 may be provided in a size sufficient to be bonded to the semiconductor wafer 3, and may be laminated on the entire surface of the dicing tape 1.

(substrate)

The base material 1a is a strength matrix of the laminated sheet 10. For example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene Polyolefin such as polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, Polyesters such as ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimine, Polyetheretherketone, polyimide, polyetherimine, polyamine, fully aromatic polyamine, polyphenylene sulfide, aromatic polyamine (paper), glass, glass cloth, fluororesin, poly Vinyl chloride, polyvinylidene chloride, cellulose resin, polyoxyxylene resin, metal (foil), paper, and the like. When the adhesive layer 1b is an ultraviolet curing type, the substrate 1a is preferably transparent to ultraviolet rays.

Moreover, as a material of the base material 1a, a polymer such as a crosslinked body of the above resin may be mentioned. The plastic film can be used without extension, and if necessary, a uniaxial or biaxial extension can be used.

In order to improve the adhesion to the adjacent layer, retention, etc., the surface of the substrate 1a can be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, or the like. A coating treatment using a primer (for example, an adhesive described below).

The above-mentioned substrate 1a can be appropriately selected from the same species or different species, and a plurality of kinds can be used as needed. Moreover, in order to provide an antistatic property to the base material 1a, a vapor deposition layer containing a conductive material having a thickness of about 30 to 500 Å, such as a metal, an alloy, or the like, may be provided on the base material 1a. Antistatic ability can also be imparted by adding an antistatic agent to the substrate. The substrate 1a may be a single layer or a composite layer of two or more.

The thickness of the substrate 1a can be appropriately determined, and is usually about 5 μm or more and 200 μm or less, preferably 35 μm or more and 120 μm or less.

Further, in the substrate 1a, various additives (for example, a coloring agent, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, and a hindrance) can be contained within a range that does not impair the effects of the present invention. Fuel, etc.).

(adhesive layer)

The adhesive used for the formation of the adhesive layer 1b is controlled so that the semiconductor wafer can be firmly held by the sheet-like resin composition at the time of dicing, and can be controlled by peeling off the semiconductor element with the sheet-like resin composition at the time of pick-up. There are no special restrictions. For example, a usual pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive can be used. As the pressure-sensitive adhesive, it is preferable to use an acrylic polymer as a basis for the cleansing property of an organic solvent such as an ultrapure water or an alcohol, such as a semiconductor wafer or glass. A polymer based acrylic adhesive.

As the acrylic polymer, those using acrylate as a main monomer component can be mentioned. As the acrylate, for example, an alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, third butyl ester, pentane) can be used. Ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, thirteen Alkyl esters, tetradecyl esters, cetyl esters, octadecyl esters, eicosyl esters and the like have a carbon number of from 1 to 30, especially a linear or branched carbon number of from 4 to 18. One or two or more kinds of a cycloalkyl (meth)acrylate (for example, a cyclopentyl ester or a cyclohexyl ester), and an acrylic polymer or the like as a monomer component. In addition, the (meth)acrylate means an acrylate and/or a methacrylate, and the (meth) of this invention has the same meaning.

The acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester, as needed, in order to modify the cohesive force, heat resistance, and the like. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumaric acid. a carboxyl group-containing monomer such as crotonic acid; maleic anhydride, i Anhydride monomer such as acetic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate , 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl)methyl (meth)acrylate Hydroxyl-containing monomer; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, (meth)acrylamide, propanesulfonic acid, (methyl) a sulfonic acid group-containing monomer such as sulfopropyl acrylate or (meth) acryloxynaphthalenesulfonic acid; a phosphate group-containing monomer such as 2-hydroxyethyl propylene phthalate; acrylamide, acrylonitrile, etc. . These copolymerizable monomer components may be used alone or in combination of two or more. The amount of the copolymerizable monomers used is preferably 40% by weight or less based on the total of the monomer components.

Further, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization in order to carry out crosslinking. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol di(meth)acrylate. Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(methyl) Acrylate, epoxy (meth) acrylate, (meth) acrylate polyester, (meth) acrylate urethane, and the like. These polyfunctional monomers may be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total of the monomer components in terms of adhesion characteristics and the like.

The above acrylic polymer can be obtained by supplying a single monomer or a mixture of two or more kinds of monomers to polymerization. The polymerization can also be carried out by any one of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. It is preferable that the content of the low molecular weight substance is small in terms of preventing contamination of the cleaned adherend or the like. In this respect, the amount average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.

Further, in the above-mentioned adhesive, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably used. External cross-linking A specific method of the method includes a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent to carry out a reaction. In the case of using an external crosslinking agent, the amount thereof to be used is appropriately determined depending on the balance with the base polymer to be crosslinked, and further depending on the use as the adhesive. In general, it is preferably about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the base polymer. Further, in the adhesive, an additive such as various conventionally known adhesion-imparting agents and anti-aging agents may be used in addition to the above components as necessary.

The adhesive layer 1b can be formed of a radiation hardening type adhesive. The radiation-curable adhesive can be easily irradiated by radiation such as ultraviolet rays to increase the degree of crosslinking, and the adhesion of the semiconductor wafer with the sheet-like resin composition can be easily performed. Examples of the radiation include X-rays, ultraviolet rays, electron beams, α rays, β rays, and neutron rays.

The radiation-curable pressure-sensitive adhesive can be used without any particular limitation, and a functional group having radiation curability such as a carbon-carbon double bond and exhibiting adhesiveness can be used. The radiation-curable adhesive is exemplified by an ordinary type of pressure-sensitive adhesive such as the above-mentioned acrylic pressure-sensitive adhesive or rubber-based pressure-sensitive adhesive, and radiation-hardening is added to a radiation-curable monomer component or oligomer component. Adhesive.

Examples of the radiation curable monomer component include a urethane oligomer, a (meth) acrylate urethane, a trimethylolpropane tri(meth) acrylate, and the like. Methyl hydroxymethane tetra(meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate Ester, 1,4-butanediol di(meth)acrylate, and the like. Further, examples of the radiation curable oligomer component include various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, and are suitable for their weight average. The molecular weight is in the range of about 100 to 30,000. The amount of the radiation-hardening monomer component or the oligomer component can be appropriately determined according to the type of the above-mentioned adhesive layer to reduce the viscosity. The amount of adhesion of the agent layer. In general, it is, for example, 5 to 500 parts by weight, preferably 40 to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

Further, as the radiation-curable adhesive, in addition to the above-described additive-type radiation-curable adhesive, a base polymerization having a carbon-carbon double bond in a polymer side chain or a main chain or a main chain terminal may be used. Intrinsic radiation curable adhesive for matter. The intrinsic type radiation curable adhesive does not need to contain an oligomer component or the like as a low molecular component, or has a small content. Therefore, the oligomer component or the like does not move over time in the adhesive, and a stable layer structure can be formed. The adhesive layer is preferred.

The base polymer having a carbon-carbon double bond can be used without any particular limitation, and has a carbon-carbon double bond and has adhesiveness. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

The method of introducing the carbon-carbon double bond to the above acrylic polymer is not particularly limited, and various methods can be employed. However, molecular design when introducing a carbon-carbon double bond into a polymer side chain is easy. For example, a method of copolymerizing a monomer having a functional group with an acrylic polymer, and then allowing a compound having a functional group reactive with the functional group and a carbon-carbon double bond to maintain a carbon-carbon double bond radiation may be mentioned. Condensation or addition reaction is carried out under hardening.

Examples of combinations of such functional groups include a carboxylic acid group, an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group. Among the combinations of these functional groups, in view of easiness of the reaction, a combination of a hydroxyl group and an isocyanate group is preferred. Further, as long as the combination of the acrylic polymer having a carbon-carbon double bond is formed by a combination of the functional groups, the functional group may be located on either side of the acrylic polymer and the above compound, preferably in the above-mentioned preferred In the combination, it is preferred that the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate and 2-methyl propylene oxirane. Isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, copolymerization of the above-exemplified hydroxyl group-containing monomer or 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether ester compound can be used. Founder.

In the above-mentioned intrinsic type radiation curable adhesive, the above-mentioned base polymer (especially an acrylic polymer) having a carbon-carbon double bond can be used alone, and the above-mentioned radiation curable monomer component can be blended to the extent that the properties are not deteriorated. Oligomer component. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer.

In the case where the radiation curable adhesive is cured by ultraviolet rays or the like, it is preferred to contain a photopolymerization initiator. As the photopolymerization initiator, for example, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one, α-hydroxy-α,α'-dimethylacetophenone can be exemplified. , an α-keto alcohol compound such as 2-methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylbenzene Ketone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinylpropane-1 and other acetophenone-based compounds; benzoin a benzoin ether compound such as diethyl ether, benzoin isopropyl ether or fennel dimethyl ether; a ketal compound such as benzoin dimethyl ketal; an aromatic sulfonium chloride compound such as 2-naphthalene sulfonium chloride; Photoactive lanthanide compounds such as keto-1,2-propanedione-2-(O-ethoxycarbonyl)anthracene; benzophenone, benzamidine benzoic acid, 3,3'-dimethyl-4- Benzophenone-based compound such as methoxybenzophenone; 9-oxosulfur 2-chloro-9-oxosulfur 2-methyl-9-oxosulfur 2,4-dimethyl-9-oxosulfur Isopropyl-9-oxosulfur 2,4-dichloro 9-oxosulfur 2,4-diethyl-9-oxosulfur 2,4-diisopropyl-9-oxosulfur 9-oxosulfur Compound; camphorquinone; halogenated ketone; fluorenylphosphine oxide; thiol phosphate. The amount of the photopolymerization initiator to be added is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.

Furthermore, when a radiation hardening caused by oxygen is generated at the time of radiation irradiation, It is preferable to block oxygen (air) from the surface of the radiation hardening type adhesive layer 1b by any method. For example, a method of coating the surface of the above-mentioned pressure-sensitive adhesive layer 1b with a separator or a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere may be mentioned.

Further, in the adhesive layer 1b, various additives (for example, coloring agents, tackifiers, extenders, fillers, adhesion-imparting agents, plasticizers) may be contained within a range that does not impair the effects of the present invention. , anti-aging agents, antioxidants, surfactants, cross-linking agents, etc.).

The thickness of the pressure-sensitive adhesive layer 1b is not particularly limited, and is preferably about 1 to 50 μm from the viewpoint of preventing the damage of the ground surface of the semiconductor wafer and the simultaneous maintenance of the sheet-like resin composition 2. It is preferably 5 to 40 μm, more preferably 10 to 30 μm.

(Manufacturing method of laminated sheet)

The laminated sheet 10 of the present embodiment can be produced by, for example, separately preparing the dicing tape 1 and the sheet-like resin composition 2 in advance, and bonding them at the end. Specifically, it can be produced according to the steps described below.

First, the substrate 1a can be formed into a film by a conventionally known film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. Wait.

Next, an adhesive composition for forming an adhesive layer is prepared. In the adhesive composition, a resin or an additive as described in the item of the adhesive layer is formulated. After the prepared adhesive composition is applied onto the substrate 1a to form a coating film, the coated film is dried under specific conditions (heat-crosslinking if necessary) to form an adhesive layer 1b. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions are, for example, carried out at a drying temperature of 80 to 150 ° C and a drying time of 0.5 to 5 minutes. Further, after the adhesive composition is applied onto the separator to form a coating film, the coating film is dried under the above drying conditions to form the adhesive layer 1b. Thereafter, the adhesive layer 1b and the separator are bonded together on the substrate 1a. Thereby, the dicing tape 1 which has the base material 1a and the adhesive layer 1b is manufactured.

The sheet-like resin composition 2 is produced, for example, in the following manner. First, an adhesive composition as a material for forming the sheet-like resin composition 2 is prepared. A thermoplastic component or an epoxy resin, various additives, and the like are blended in the adhesive composition as described in the section of the sheet-like resin composition.

Next, after the prepared adhesive composition is applied onto a substrate separator to form a coating film in a specific thickness, the coating film is dried under specific conditions to form a sheet-like resin composition. . The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions are, for example, carried out at a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes. Further, after the adhesive composition is applied onto a separator to form a coating film, the coating film may be dried under the above drying conditions to form a sheet-like resin composition. Thereafter, the sheet-like resin composition and the separator are attached together to the substrate separator.

Then, the separator is peeled off from the dicing tape 1 and the sheet-like resin composition 2, and the sheet-like resin composition and the pressure-sensitive adhesive layer are bonded to each other. The bonding can be performed, for example, by crimping. In this case, the laminating temperature is not particularly limited, and is, for example, preferably from 30 to 100 ° C, more preferably from 40 to 80 ° C. Further, the linear pressure is not particularly limited, and is, for example, preferably 0.98 to 196 N/cm, more preferably 9.8 to 98 N/cm. Next, the substrate separator on the sheet-like resin composition was peeled off to obtain a laminated sheet of the present embodiment.

(Method of Manufacturing Semiconductor Device)

In the present embodiment, a semiconductor device is fabricated using a semiconductor wafer in which circuits are formed on both sides. Further, the cutting on the dicing tape and the pickup of the semiconductor element are performed, and finally, the semiconductor element is mounted on the attached body.

As a representative step of the embodiment, the method includes the steps of: preparing a step of preparing the laminated sheet; and a bonding step of forming a semiconductor wafer having a circuit surface of the connecting member on both sides and a sheet of the laminated sheet The resin composition is bonded; a cutting step of cutting the semiconductor wafer to form the sheet-like resin composition a semiconductor device; a pick-up step of peeling the semiconductor element with the sheet-like resin composition from the laminated sheet; and a positioning step of aligning the relative positions of the semiconductor element and the attached object to each other a predetermined position; a connecting step of filling a space between the attached body and the semiconductor element by the sheet-like resin composition, and electrically connecting the semiconductor element and the attached body via the connecting member; and pressurizing heating A hardening step of hardening the sheet-like resin composition under pressure heating.

[Preparation steps]

In the preparation step, the laminated sheet 10 in which the sheet-like resin composition 2 is provided on the dicing tape 1 is prepared (see FIG. 1A). As the laminated sheet 10, the laminated sheet described above can be suitably used.

[Finishing step]

In the bonding step, as shown in FIG. 1A, a semiconductor wafer 3 having a circuit surface 3a having a connection member 4a and a circuit surface 3b having a back surface electrode 4b formed on both sides thereof, and a sheet-like resin combination of the above laminated sheets are formed. The object 2 fits. In addition, since the strength of the semiconductor wafer having a specific thickness is reduced, the semiconductor wafer is fixed to a support such as a support glass via a temporary fixing material (not shown). In this case, after the semiconductor wafer and the sheet-like resin composition are bonded together, the step of peeling the temporary fixing material together with the support may be included. Which of the circuit surfaces of the semiconductor wafer 3 is bonded to the sheet-like resin composition 2 may be changed according to the structure of the intended semiconductor device.

(semiconductor wafer)

A plurality of connection members 4a and a plurality of back electrodes 4b are formed on the circuit faces 3a and 3b of the semiconductor wafer 3 (see FIG. 1A). The material of the connecting member such as a bump or a conductive material or the back electrode is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc alloy. It is a solder (alloy) such as a metal material or a tin-zinc-bismuth metal material, or a gold-based metal material or a copper-based metal material. The height of the connecting member and the back electrode can also be determined depending on the application, and is usually about 3 to 100 μm. Of course, semiconductor The heights of the connecting members in the wafer 3 may be the same or different.

The connection member 4a and the back surface electrode 4b on both sides of the semiconductor wafer 3 may be electrically connected or not connected. The electrical connection between the two can be exemplified by a connection via a via hole called a TSV form.

In the method of manufacturing the semiconductor device of the present embodiment, the thickness of the sheet-like resin composition is preferably the height X (μm) of the connecting member formed on the surface of the semiconductor wafer and the thickness Y of the sheet-like resin composition ( Μm) satisfies the following relationship.

0.5≦Y/X≦2

By satisfying the above relationship by the height X (μm) of the connecting member and the thickness Y (μm) of the cured film, the space between the semiconductor element and the object can be sufficiently filled, and the sheet-like resin composition can be prevented from being The space overflows excessively, and contamination or the like of the semiconductor element caused by the sheet-like resin composition can be prevented. Furthermore, when the height of each connecting member is different, the height of the highest connecting member is used as a reference.

(fit)

First, the separator arbitrarily provided on the sheet-like resin composition 2 of the laminated sheet 10 is appropriately peeled off, and as shown in FIG. 1A, the circuit surface 3a and the sheet of the semiconductor wafer 3 on which the connecting member 4a is formed are formed. The resin composition 2 is opposed to each other, and the sheet-like resin composition 2 is bonded (mounted) to the semiconductor wafer 3.

The method of bonding is not particularly limited, and it is preferably a method using pressure bonding. The pressure bonding is usually carried out by applying a pressure of 0.1 to 5 MPa, more preferably 0.3 to 2 MPa, by a known pressing mechanism such as a pressure roller. At this time, it is also possible to perform pressure bonding while heating to about 40 to 100 °C. Further, in order to improve the adhesion, it is also preferred to perform pressure bonding under reduced pressure (1 to 1000 Pa).

[Cutting step]

In the cutting step, the semiconductor wafer 3 and the sheet-like resin composition 2 are cut as shown in FIG. 1B based on the cutting position found by direct light or indirect light, infrared rays or the like. Further, the semiconductor element 31 with the sheet-like resin composition attached thereto is formed. The semiconductor wafer 3 (semiconductor element) 31 is manufactured by cutting the semiconductor wafer 3 into a specific size and singulating it in a dicing process. The semiconductor wafer 31 obtained here is integrated with the sheet-like resin composition 2 cut into the same shape. The dicing is performed from the side of the circuit surface 3b on the side opposite to the circuit surface 3a of the sheet-like resin composition 2 to which the semiconductor wafer 3 is bonded, according to a conventional method.

In this step, for example, a cutting method in which a cutting blade is used for cutting until the cutting tape 1 is called a full cutting can be employed. The cutting device used in this step is not particularly limited, and those known in the prior art can be used. Further, since the semiconductor wafer is subsequently fixed to the dicing tape 1 with more excellent adhesion, it is possible to suppress wafer defects or wafer scattering, and it is also possible to suppress breakage of the semiconductor wafer. In addition, when the sheet-like resin composition is formed of a resin composition containing an epoxy resin, even if it is cut by cutting, it is possible to suppress or prevent the sheet-like resin composition from being formed on the cut surface thereof. The paste of the resin composition overflows. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (adhesion) to each other, and the following pick-up can be performed more satisfactorily.

Further, in the case where the extension of the dicing tape is performed after the cutting step, the stretching can be carried out using a previously known stretching device. The extension device has a nut-shaped outer ring that can be pressed downward by a cutting ring, and an inner ring that has a smaller diameter than the outer ring and supports the cutting tape. By this stretching step, in the following pickup step, it is possible to prevent the adjacent semiconductor wafers from coming into contact with each other and being damaged.

[pickup step]

In order to recover the semiconductor wafer 31 which is then fixed to the dicing tape 1, as shown in FIG. 1C, the semiconductor wafer 31 with the sheet-like resin composition 2 is picked up, and the semiconductor wafer 31 and the sheet-like resin composition 2 are laminated. The body A was peeled off from the tape 1 for cutting.

The method of picking up is not particularly limited, and various methods known in the prior art can be employed. For example, the following method and the like can be used: each semiconductor wafer is self-cut by a needle. The substrate side is pushed up and the push-up semiconductor wafer is picked up by a pick-up device. Further, the semiconductor wafer 31 picked up is integrated with the sheet-like resin composition 2 bonded to the circuit surface 3a to form a laminated body A.

In the case where the adhesive layer 1b is of an ultraviolet curing type, the pickup is performed by irradiating the adhesive layer 1b with ultraviolet rays. Thereby, the adhesive force of the adhesive layer 1b with respect to the sheet-like resin composition 2 is reduced, and peeling of the semiconductor wafer 31 becomes easy. As a result, the pickup can be performed without damaging the semiconductor wafer 31. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary. Further, as a light source used for ultraviolet irradiation, for example, a low pressure mercury lamp, a low pressure high output lamp, a medium pressure mercury lamp, an electrodeless mercury lamp, a xenon flash lamp, an excimer lamp, an ultraviolet LED (Light Emitting Diode), or the like can be used. .

[installation steps]

In the mounting step, the mounting position of the semiconductor element 31 is obtained in advance by direct light, indirect light, infrared light, or the like, and the attached body 16 and the semiconductor element are filled with the sheet-like resin composition 2 in accordance with the obtained mounting position. The space between the 31s is electrically connected to the attached body 16 via the connecting member 4a (see FIG. 1D). Specifically, the semiconductor wafer 31 of the laminated body A is fixed to the attached body 16 in accordance with a conventional method in such a manner that the circuit surface 3a of the semiconductor wafer 31 faces the attached body 16. For example, the conductive material 17 (solder or the like) for bonding the bumps (connection members) 4a formed on the semiconductor wafer 31 and the connection pads covering the attached body 16 are brought into contact with each other and pressed. The material is melted, and the semiconductor wafer 31 can be electrically connected to the attached body 16 to fix the semiconductor wafer 31 to the attached body 16. Since the sheet-like resin composition 2 is attached to the circuit surface 3a of the semiconductor wafer 31, the semiconductor wafer 31 is filled with the sheet-like resin composition 2 and attached thereto while being electrically connected to the semiconductor wafer 31 and the attached body 16. The space between the bodies 16.

Further, as shown in FIG. 1E, when the semiconductor element is laminated in a plurality of layers, the semiconductor element 32 of the other laminated body is fixed to the mounted semiconductor half by repeating only the target layer portion. The step on the body member 31 is sufficient. The back surface electrode 4b provided on the circuit surface 3b which is the back surface of the semiconductor element 31 can be bonded to the connection member 4a of the semiconductor element 32 by melting. The bonding process of the lower semiconductor element 31 and the upper semiconductor element 32 may be performed in one layer, or may be performed once after temporarily fixing a specific number of semiconductor elements. The latter step is preferably performed by heat treatment, and thus is preferable in terms of efficiency.

Usually, as a temporary fixing condition in the mounting step, the temperature is 100 to 200 ° C, and the pressure is 0.5 to 100 N. Further, as the bonding conditions in the mounting step, the temperature is 150 to 300 ° C, and the pressure is 1 to 200 N. The bonding process for each layer in the mounting step can also be carried out in plural times. For example, it can be carried out at 150 ° C, 20 N for 10 seconds, and then at 260 ° C, 30 N for 10 seconds. By performing the bonding process in plural times, the resin between the connecting member and the pad or between the connecting member and the back electrode can be efficiently removed, and a better intermetallic bond can be obtained.

As the object to be attached 16, various substrates such as a semiconductor wafer, a lead frame, or a circuit board (such as a printed circuit board), and the same or different types of semiconductor elements can be used. The material of the substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. As the plastic substrate, for example, an epoxy substrate, bis-methylenediimide, and the like are mentioned. A substrate, a polyimide substrate, a glass epoxy substrate, or the like. The number of semiconductor elements mounted on one of the attached bodies is not limited, and may be one or plural. The sheet-like resin composition 2 can also be suitably applied to a wafer flip chip process in which a large number of semiconductor wafers are mounted on a semiconductor wafer.

Further, in the mounting step, one of the connection member, the back electrode, and the conductive material is melted or combined to be melted, and the bump 4a and the attached body 16 of the connecting member forming surface 3a of the semiconductor wafer 31 are formed. The surface of the conductive material 17 is connected, and the back electrode 4b of the semiconductor wafer 31 is bonded to the connecting member 4a of the semiconductor wafer 32, and the temperature at which the bump 4a, the back electrode 4b, and the conductive material 17 are melted is usually 260 ° C. Left and right (for example, 220 ° C ~ 300 ° C). The laminated sheet of the present embodiment can be formed into a sheet-like resin composition 2 by an epoxy resin or the like, and can have heat resistance which is also resistant to high temperatures in the mounting step.

[Pressure heating hardening step]

After electrically connecting the semiconductor element 31 and the object to be attached 16 and the semiconductor element after the multilayering is required, the sheet-like resin composition 2 is cured under pressure and heating. Thereby, it is possible to ensure the narrowing of the pores which can be present between the sheet-like resin composition and the adherend, the surface protection of the semiconductor element 31, and the connection between the semiconductor element 31 and the attached body 16 and between the semiconductor elements. reliability. The conditions of the press heat curing of the sheet-like resin composition are not particularly limited, but the temperature is preferably 150 to 200 ° C (more preferably 160 to 190 ° C), and the time is 2 to 6 hours (more preferably 2 to 5). The pressure is 2 to 10 kg/cm ² (more preferably 3 to 8 kg/cm ² ). Through the above steps, the semiconductor device 20 having one layer of the semiconductor element 31 or the semiconductor device 40 laminated with the multilayered semiconductor element can be obtained.

[sealing step]

Next, in order to protect the entire semiconductor device 20 or 40 including the mounted semiconductor wafer, a sealing step (not shown) may be performed. The sealing step is carried out using a sealing resin. The sealing condition at this time is not particularly limited, and the sealing resin is usually thermally cured by heating at 175 ° C for 60 seconds to 90 seconds. However, the present invention is not limited thereto, and for example, Curing at 165 ° C ~ 185 ° C for several minutes.

The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from known sealing materials such as sealing resins, and more preferably an insulating resin having elasticity. The sealing resin may, for example, be a resin composition containing an epoxy resin. Examples of the epoxy resin include epoxy resins and the like exemplified above. In addition, the sealing resin formed of the resin composition containing the epoxy resin may contain, as a resin component, a thermosetting resin (such as a phenol resin) other than an epoxy resin, or a thermoplastic resin, in addition to the epoxy resin. . In addition, the phenol resin can also be used as a curing agent for an epoxy resin, and examples of such a phenol resin include the phenol resin exemplified above.

[semiconductor device]

Secondly, referring to the first embodiment of the semiconductor device obtained by using the laminated sheet The description will be made (see FIGS. 1D and 1E). In the semiconductor device 40 of the present embodiment, the semiconductor element 31 and the attached body 16 are electrically connected via a bump (connection member) 4a formed on the semiconductor element 31 and a conductive material 17 provided on the attached body 16. Further, the back surface electrode 4b of the semiconductor element 31 is bonded to the connection member 4a of the semiconductor element 32, thereby electrically connecting the semiconductor elements 31 and 32. The sheet-like resin composition 2 is disposed between the semiconductor element 31 and the object to be attached 16 and between the semiconductor elements 31 and 32 so as to fill the space. Since the semiconductor device 40 is obtained by the above-described manufacturing method using the specific sheet-like resin composition 2 and alignment by light irradiation, it is achieved between the semiconductor element 31 and the attached body 16 and between the semiconductor elements 31 and 32. Good electrical connection. Therefore, the surface protection of the semiconductor element, the space between the semiconductor element 31 and the attached body 16 and the filling of the space between the semiconductor elements 31, 32, and between the semiconductor element 31 and the attached body 16 and between the semiconductor elements 31, 32 The electrical connection is sufficiently level, and the semiconductor device 40 can exhibit high reliability.

<Second embodiment>

In the first embodiment, a semiconductor wafer in which circuits are formed on both sides is used. In contrast, in the present embodiment, a semiconductor wafer in which a circuit is formed on one surface is used to manufacture a semiconductor device. Further, when the semiconductor wafer used in the present embodiment does not have a target thickness, a back grinding step of grinding the back surface on the side opposite to the circuit surface of the semiconductor wafer is performed. Therefore, in the present embodiment, the back surface of the semiconductor wafer is ground using a laminated sheet having a sheet-like resin composition laminated on the back grinding tape, and then the dicing tape is cut and the semiconductor element is picked up. Finally, the semiconductor component is mounted on the attached body. The base material, the pressure-sensitive adhesive layer, and the sheet-like resin composition of the tape for back grinding can be used in the same manner as in the first embodiment.

The representative step of the present embodiment includes the following steps: a preparation step of preparing a laminated sheet comprising a back grinding tape and a sheet-like resin composition laminated on the back grinding tape; and a bonding step of the semiconductor The formation of the wafer has the electrical connection of the member The road surface is bonded to the sheet-like resin composition of the laminated sheet; the grinding step is performed on the back surface of the semiconductor wafer; and the fixing step is performed by grinding the sheet-like resin composition together with the semiconductor wafer from the back surface. Stripping the tape and attaching the semiconductor wafer to the dicing tape; a cutting position determining step of determining a cutting position of the semiconductor wafer; and a dicing step of cutting the semiconductor wafer to form the sheet-like resin a semiconductor element of the composition; a pick-up step of peeling off the semiconductor element with the sheet-like resin composition from the dicing tape; and a positioning step of aligning the relative position of the semiconductor element with the object to be attached And a connecting step of filling the space between the attached body and the semiconductor element by the sheet-like resin composition, and electrically connecting the semiconductor element and the attached body via the connecting member. As the dicing tape, the dicing tape of the first embodiment can be used, and a known commercial product or the like can be used. Further, the conditions of the respective steps can be appropriately selected from known conditions or the same conditions as in the first embodiment.

<Third embodiment>

In the first embodiment, the dicing tape is used as the constituent member of the laminated sheet. However, in the present embodiment, the adhesive layer of the dicing tape is not provided, and the substrate is used alone. Therefore, the laminated sheet of the present embodiment is in a state in which a sheet-like resin composition is laminated on a substrate. In the present embodiment, the ultraviolet irradiation before the pick-up step is not performed due to the omission of the adhesive layer. In addition to these aspects, a specific semiconductor device can be manufactured by the same steps as in the first embodiment.

<Other Embodiments>

In the first embodiment to the third embodiment, the cutting using the dicing blade is used in the dicing step, but the modified portion may be formed by laser irradiation inside the semiconductor wafer, and the semiconductor may be formed along the modified portion. The so-called stealth cut in which the wafer is divided and singulated is used instead.

[Examples]

Hereinafter, suitable embodiments of the invention will be described in detail by way of example. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the present invention to the above, unless otherwise specified. Also, the presence of parts means parts by weight.

<Examples 1 to 3 and Comparative Examples 1 to 2>

(Production of sheet-like resin composition)

The following components were dissolved in methyl ethyl ketone at a ratio shown in Table 1, to prepare a solution of an adhesive composition having a solid content concentration of 38 to 48% by weight.

Acrylic resin: an acrylate-based polymer containing ethyl acrylate-butyl acrylate-acrylonitrile as a main component (trade name "SG-70L", manufactured by Nagase Chemtex Co., Ltd., Mw: 90000)

Epoxy resin 1: trade name "Epikote 828", manufactured by JER Co., Ltd.

Epoxy resin 2: trade name "Epikote 1004", manufactured by JER Co., Ltd.

Phenol resin: trade name "MEH-7851H", manufactured by Minghe Chemical Co., Ltd.

Inorganic filler: spherical cerium oxide (trade name "YV180C-MJJ", manufactured by Admatechs Co., Ltd., average particle diameter 0.18 μm (180 nm))

Thermal hardening promoting catalyst: Imidazole catalyst (trade name "2PHZ-PW", manufactured by Shikoku Chemicals Co., Ltd.)

The solution of the adhesive composition was applied to a release-treated film composed of a polyethylene terephthalate film having a thickness of 38 μm which was subjected to polyfluorination release treatment as a release liner (separator). Then, it was dried at 130 ° C for 2 minutes to prepare a sheet-like resin composition having a thickness of 40 μm.

"Evaluation"

The following sheet-like resin composition was evaluated as follows. The results of each evaluation are shown in Table 1.

<Method for Measuring Minimum Melt Viscosity>

The melt viscosity was measured by setting the prepared sheet-like resin composition without heat treatment (thermosetting treatment), and by using a rotary viscometer (manufactured by Thermo Fisher Scientific, the product name "HAAKE Roto Visco 1" The parallel viscosity method was used to determine the static viscosity. Specifically, the measurement was carried out by setting the temperature to 80 ° C to 250 ° C under the conditions of a gap of 100 μm, a rotating plate diameter of 20 mm, a shear rate of 5 s ^-1 , and a temperature increase rate of 10 ° C/min. The lowest melt viscosity [Pa‧s] was obtained by reading the lowest value of the melt viscosity at 80 ° C to 200 ° C at this time.

<Measurement of Reaction Rate in DSC Measurement>

Using a differential scanning calorimeter (manufactured by TA Instruments, Q2000), the sheet-like resin composition before the heat treatment was heated from 10 ° C to 350 ° C at 10 ° C / min (assuming that the thermosetting reaction of the sheet-like resin composition was completed) At the temperature), the total amount of heat release Qt during the temperature rise. Further, the total amount of heat release Qh in the heating process when the sheet-like resin composition before the heat treatment was subjected to heat treatment at 250 ° C for 10 seconds was measured. The amount of heat generation is obtained by the peak area obtained by the measurement of the exothermic peak obtained by the differential scanning calorimetry and the reference line (the line connecting the rising temperature of the exothermic peak to the reaction end temperature). Finally, the reaction rate R was determined based on the following formula.

R={(Qt-Qh/Qt)}×100 (%)

<Installation Evaluation>

A wafer-shaped resin composition of the same size was attached to a 12 mm square wafer (trade name "WALTS-TEG CC80 Mark II-0101JY", manufactured by WALTS Co., Ltd.), and sample A was placed. The attachment conditions were based on a vacuum degree of 100 Pa, a temperature of 40 ° C, and a bonding pressure of 0.5 MPa.

Next, the slide was placed on a platform at 100 ° C, and Sample A was mounted on the slide. The installation was carried out using a flip chip bonding machine (FC3000W) from Toray Engineering. The mounting conditions were maintained at 260 ° C for 10 seconds under load: 20 N.

(overflow evaluation)

Observed by the optical microscope (200 times) from the back side of the slide The sample was evaluated as "○" when the amount of the sheet-like resin composition overflowed from the end portion of the wafer was 100 μm or less, and "x" when the amount exceeded 100 μm.

(Pore evaluation)

The obtained sample obtained was subjected to pressure heat hardening under the conditions of a pressure of 5 kg/cm ² and a temperature of 175 ° C for 3 hours. The sample after the press-heat hardening was confirmed from the back side of the slide glass by an optical microscope (500 times), and the case where the pores (maximum diameter: more than 3 μm) were not confirmed was evaluated as "○", and even one place was The case where the occurrence of the void was confirmed was evaluated as "x".

According to Table 1, it was found that the pores were narrowed in all the examples, and the overflow amount of the sheet-like resin composition after the mounting was suppressed. On the other hand, in Comparative Example 1, although the overflow evaluation was good, the pores were confirmed. The reason for this is considered to be that the reaction rate R is too high, and the narrowing of the pores at the time of press heat curing is insufficient. In Comparative Examples 2 and 3, although the pore evaluation was good, the evaluation of the overflow was poor. The reason for this is considered to be that the lowest melt viscosity of the sheet-like resin composition is too low, and the amount of overflow of the sheet-like resin composition at the time of mounting becomes excessive.

2‧‧‧Flake resin composition

4a‧‧‧Connecting members

16‧‧‧ Attached

17‧‧‧Electrical materials

20‧‧‧Semiconductor device

31‧‧‧Semiconductor wafer (semiconductor component)

Claims (6)

A sheet-like resin composition for filling a thermosetting sheet-like resin composition in a space between an attached body and a semiconductor element electrically connected to the attached body, and 80 ° C before thermosetting The lowest melt viscosity at 200 ° C is 2000 Pa ‧ or more, and the total heat release in the temperature rise process from -10 ° C to 350 ° C in the DSC measurement at 10 ° C / min is set to Qt, and will be heated at 250 ° C. When the total amount of heat generation in the heating process for 10 seconds is Qh, the reaction rate R represented by the following formula is 50% or less, and R = {(Qt - Qh / Qt)} × 100 (%). The sheet-like resin composition of claim 1, wherein the peak temperature during the temperature rise in the DSC measurement is 180 ° C or higher. The sheet-like resin composition of claim 1 or 2, which comprises a thermosetting-promoting catalyst. A laminated sheet comprising: a pressure-sensitive adhesive tape having a substrate and an adhesive layer disposed on the substrate; and a sheet-like resin composition according to any one of claims 1 to 3 laminated on the adhesive layer Things. The laminated sheet according to claim 4, wherein the adhesive tape is a back grinding tape or a cutting tape of a semiconductor wafer. A method of manufacturing a semiconductor device comprising: a semiconductor device having an attached body, a semiconductor element electrically connected to the attached body, and a sheet-like resin composition filling a space between the attached body and the semiconductor element; a manufacturing method, comprising the steps of: affixing the sheet-like resin composition according to any one of claims 1 to 3 to the above a step of attaching a semiconductor element to a semiconductor element of a sheet-like resin composition; filling a space between the attached body and the semiconductor element with the sheet-like resin composition, and electrically charging the semiconductor element and the attached body a connecting step of the sexual connection; and a press heat hardening step of hardening the sheet-like resin composition under pressure heating.