CN107614641B - Semiconductor processing belt - Google Patents

Semiconductor processing belt Download PDF

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Publication number
CN107614641B
CN107614641B CN201680032247.9A CN201680032247A CN107614641B CN 107614641 B CN107614641 B CN 107614641B CN 201680032247 A CN201680032247 A CN 201680032247A CN 107614641 B CN107614641 B CN 107614641B
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adhesive layer
metal layer
meth
acrylate
resin
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CN107614641A (en
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青山真沙美
佐野透
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
    • C09J171/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C09J171/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C09J171/12—Polyphenylene oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04—Polyurethanes
    • C09J175/14—Polyurethanes having carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/28—Metal sheet
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

Abstract

The invention provides a semiconductor processing tape which can well separate a semiconductor wafer during cutting and can prevent package cracks during packaging. The semiconductor processing belt (10) is characterized by comprising the following components: the dicing tape (13) comprises a base film (11) and a pressure-sensitive adhesive layer (12), a metal layer (14) provided on the pressure-sensitive adhesive layer (12) and protecting the back surface of a semiconductor chip, and an adhesive layer (15) provided on the metal layer (14) and adhering the metal layer (14) to the back surface of the semiconductor chip, wherein the metal layer (14) has a surface roughness RzJIS of 0.5 [ mu ] m or more and less than 10.0 [ mu ] m based on a ten-point average roughness.

Description

Semiconductor processing belt
Technical Field
The present invention relates to a semiconductor processing tape, and more particularly to a semiconductor processing tape having a metal layer for protecting a back surface of a semiconductor chip mounted in a flip-chip (face down) manner.
Background
In recent years, thinning and miniaturization of semiconductor devices and packages thereof have been further demanded. Semiconductor devices are manufactured using a mounting method called a so-called flip-chip (face down) method. In the flip-chip method, a semiconductor chip is used in which a convex electrode called a bump for ensuring conduction is formed on a circuit surface, and the circuit surface is inverted (flip-chip) to connect the electrode to a substrate (so-called flip-chip connection).
In such a semiconductor device, the back surface of the semiconductor chip is sometimes protected by a semiconductor processing tape to prevent damage to the semiconductor chip and the like (see patent document 1). Further, a one-sided adhesive film including a metal layer and an adhesive layer attached to a semiconductor element via an adhesive layer is also known (see patent document 2).
As a typical procedure of flip-chip connection, a solder bump or the like formed on a surface of a semiconductor chip to which a semiconductor processing tape is bonded is immersed in a flux, then the bump is brought into contact with an electrode formed on a substrate (the solder bump is also formed on the electrode as necessary), and finally the solder bump is melted to reflow the solder bump and the electrode. The flux is used for cleaning solder bumps during soldering, preventing oxidation, improving solder wettability, and the like. Through the above steps, a good electrical connection between the semiconductor chip and the substrate can be established.
Therefore, as a tape for semiconductor processing which can prevent generation of dirt even if flux adheres and can produce a semiconductor device having excellent appearance, a film for back surface of flip-chip type semiconductor which comprises an adhesive layer and a protective layer laminated on the adhesive layer and in which the protective layer is made of a heat-resistant resin or metal having a glass transition temperature of 200 ℃.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2007-158026
Patent document 2: japanese laid-open patent publication No. 2007-235022
Patent document 3: japanese patent laid-open No. 2012 and 033626
Disclosure of Invention
Problems to be solved by the invention
As in patent document 1, when a protective film is formed by curing a resin containing a radiation-curable component or a thermosetting component by radiation or heat, there is a problem that the semiconductor wafer or the semiconductor chip during processing is warped due to a large difference in thermal expansion coefficient between the cured protective film and the semiconductor wafer.
However, in the above patent document 2 or patent document 3, the adhesion force between the metal protective layer and the adhesive layer is insufficient, and a problem occurs in that a package crack occurs between the protective layer and the adhesive layer at the time of packaging, and the reliability is lowered. Patent document 3 also discloses a flip-chip type film for semiconductor back surface, in which a protective layer and an adhesive layer are provided on the adhesive layer of a dicing tape in which an adhesive layer is laminated on a base material. When such a dicing tape-integrated film for flip-chip semiconductor back surface is used, the adhesive force between the protective layer and the adhesive layer is insufficient, and when the semiconductor wafer is diced into chips, there is a problem that peeling occurs between the protective layer and the adhesive layer, and the semiconductor wafer cannot be diced well.
Accordingly, an object of the present invention is to provide a semiconductor processing tape that can favorably singulate a semiconductor wafer during dicing and can prevent the occurrence of package cracks during packaging.
Means for solving the problems
In order to solve the above problems, the present invention provides a tape for semiconductor processing, comprising a dicing tape including a base film and an adhesive layer, a metal layer provided on the adhesive layer, and an adhesive layer provided on the metal layer for bonding the metal layer to a back surface of a semiconductor chip, wherein the metal layer has a surface roughness RzJIS based on a ten-point average roughness of 0.5 μm or more and less than 10.0 μm.
Preferably, the metal layer of the semiconductor processing tape is a copper foil.
The adhesive layer preferably contains (a) an epoxy resin, (B) a curing agent, (C) a phenoxy resin, and (D) a surface-treated inorganic filler, and the content of (D) is preferably 40% by weight or more and 65% by weight or less based on the total of (a) to (D).
In addition, the adhesive layer of the tape for semiconductor processing preferably contains CH2An acrylic polymer comprising an acrylic ester represented by CHCOOR (wherein R is an alkyl group having 4 to 8 carbon atoms), a hydroxyl group-containing monomer, and an isocyanate compound having a radically reactive carbon-carbon double bond in the molecule.
Effects of the invention
According to the present invention, the semiconductor wafer can be singulated in a good manner during dicing, and generation of package cracks can be prevented during packaging.
Drawings
Fig. 1 is a cross-sectional view schematically showing the structure of a semiconductor processing tape according to an embodiment of the present invention.
Fig. 2 is a sectional view for explaining a method of using the semiconductor processing tape according to the embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail.
Fig. 1 is a cross-sectional view showing a semiconductor processing tape 10 according to an embodiment of the present invention. The semiconductor processing tape 10 includes a dicing tape 13 including a base film 11 and a pressure-sensitive adhesive layer 12 provided on the base film 11, and a metal layer 14 for protecting a semiconductor chip C (see fig. 2) and an adhesive layer 15 provided on the metal layer 14 are provided on the pressure-sensitive adhesive layer 12.
The surface of the adhesive layer 15 opposite to the surface contacting the metal layer 14 is preferably protected by a separator (release liner) (not shown). The separator has a function as a protective adhesive layer 15 until it is supplied to a practical protective material. The separator can be used as a support base material when the metal layer 14 is bonded to the adhesive layer 12 of the dicing tape 13 in the process of manufacturing the semiconductor processing tape 10.
The dicing tape 13, the metal layer 14, and the adhesive layer 15 may be cut (precut) into a predetermined shape in advance according to a use process or a device. Further, the semiconductor processing tape 10 of the present invention may be in a form in which the semiconductor wafer W is cut every 1 piece, or in a form in which a long sheet material formed of a plurality of pieces of the semiconductor wafer W cut every 1 piece is wound up in a roll shape. Hereinafter, each constituent element will be described.
< substrate film 11>
The substrate film 11 may be used without particular limitation as long as it is a conventionally known substrate film, but when a radiation-curable material is used as the pressure-sensitive adhesive layer 12 described later, a substrate film having radiation permeability is preferably used.
Examples of the material include homopolymers or copolymers of α -olefins such as polyethylene, polypropylene, ethylene-propylene copolymers, poly-1-butene, poly-4-methyl-1-pentene, ethylene-vinyl acetate copolymers, ethylene-ethyl acrylate copolymers, ethylene-methyl acrylate copolymers, ethylene-acrylic acid copolymers, ionomers, and mixtures thereof, thermoplastic elastomers such as polyurethane, styrene-ethylene-butene or pentene copolymers, polyamide-polyol copolymers, and mixtures thereof. The substrate film 11 may be a substrate film obtained by mixing 2 or more kinds of materials selected from the group, or may be a substrate film obtained by forming a single layer or a plurality of layers thereof.
The thickness of the base film 11 is not particularly limited and may be set as appropriate, but is preferably 50 to 200 μm.
In order to improve the adhesion between the base film 11 and the pressure-sensitive adhesive layer 12, the surface of the base film 11 may be subjected to chemical surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage shock exposure, or ionizing radiation treatment, or physical surface treatment.
In the present embodiment, the pressure-sensitive adhesive layer 12 is directly provided on the base film 11, but may be indirectly provided via a primer layer for improving adhesion, an anchor layer for improving machinability during dicing, a stress relaxation layer, an antistatic layer, and the like.
< adhesive layer 12>
The resin used for the pressure-sensitive adhesive layer 12 is not particularly limited, and known chlorinated polypropylene resins, acrylic resins, polyester resins, polyurethane resins, epoxy resins, and the like used for pressure-sensitive adhesives can be used.
Examples of the acrylic polymer include alkyl (meth) acrylates (e.g., methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, isopentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, tridecyl (meth) acrylate, dodecyl (meth) acrylate, and the like, And acrylic polymers containing 1 or 2 or more kinds of alkyl groups such as tetradecyl (meth) acrylate, hexadecyl (meth) acrylate, octadecyl (meth) acrylate, and eicosyl (meth) acrylate, which have 1 to 30 carbon atoms, particularly 4 to 18 carbon atoms, and linear or branched alkyl esters, as monomer components, and cycloalkyl (meth) acrylates (e.g., cyclopentyl ester, cyclohexyl ester, etc.). The term (meth) acrylate means acrylate and/or methacrylate, and all the terms (meth) in the present invention have the same meaning.
The acrylic polymer may contain units corresponding to other monomer components copolymerizable with the alkyl (meth) acrylate or cycloalkyl ester, as necessary, for the purpose of modifying cohesive force, heat resistance, and the like. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and 4-hydroxymethylcyclohexyl (meth) acrylate; sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, (meth) sulfopropyl acrylate, and (meth) acryloyloxynaphthalenesulfonic acid; phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide, acrylonitrile, and the like. These copolymerizable monomer components may be used in 1 or 2 or more. The amount of the copolymerizable monomer is preferably 40% by weight or less based on the total monomer components.
Further, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like may be contained as a comonomer component as needed. Examples of such a polyfunctional monomer include hexane diol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. These polyfunctional monomers may be used in 1 or 2 or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total monomer components in view of adhesive properties and the like.
The acrylic polymer can be produced by applying an appropriate method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, or a suspension polymerization method to a mixture of 1 or 2 or more component monomers. The adhesive layer 12 is preferably a composition in which the content of low molecular weight substances is suppressed from the viewpoint of preventing contamination of wafers, and is preferably a composition containing an acrylic polymer having a weight average molecular weight of 30 ten thousand or more, particularly 40 to 300 ten thousand as a main component from the viewpoint of preventing contamination of wafers, and therefore, the adhesive may be appropriately crosslinked by an internal crosslinking method, an external crosslinking method, or the like.
In order to control the crosslinking density of the pressure-sensitive adhesive layer 12 and improve the pickup property, for example, a suitable method such as a method of crosslinking with a suitable external crosslinking agent such as a polyfunctional isocyanate compound, a polyfunctional epoxy compound, a melamine compound, a metal salt compound, a metal chelate compound, an amino resin compound, or a peroxide, or a method of crosslinking by irradiation with an energy ray or the like by mixing low molecular weight compounds having 2 or more carbon-carbon double bonds can be used. When the external crosslinking agent is used, the amount thereof is appropriately determined in accordance with the balance with the base polymer to be crosslinked and further in accordance with the use application as the adhesive. In general, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight, to 100 parts by weight of the base polymer. In addition, in the pressure-sensitive adhesive, from the viewpoint of preventing deterioration or the like, additives such as various adhesion imparting agents and antioxidants may be used, as necessary, in addition to the above components.
As the adhesive constituting the adhesive layer 12, a radiation curable adhesive is preferable. As the radiation-curable adhesive, an additive-type radiation-curable adhesive in which a radiation-curable monomer component or a radiation-curable oligomer component is blended with the above adhesive can be exemplified.
Examples of the radiation-curable monomer component to be blended include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate. These monomer components may be used in combination of 1 or 2 or more.
The radiation-curable oligomer component includes various oligomers such as urethane type, polyether type, polyester type, polycarbonate type, polybutadiene type, etc., and an oligomer having a molecular weight in the range of about 100 to 30000 is suitable. The amount of the radiation-curable monomer component or oligomer component to be blended may be determined as appropriate depending on the type of the pressure-sensitive adhesive layer, so as to reduce the adhesive strength of the pressure-sensitive adhesive layer. In general, the amount of the acrylic polymer is, for example, about 5 to 500 parts by weight, preferably about 70 to 150 parts by weight, based on 100 parts by weight of a base polymer such as an acrylic polymer constituting the adhesive.
In addition to the additive-type radiation-curable pressure-sensitive adhesives, examples of the radiation-curable pressure-sensitive adhesives include internal radiation-curable pressure-sensitive adhesives using a polymer having a carbon-carbon double bond in a side chain or a main chain of the polymer or at a terminal of the main chain as a base polymer. The radiation curable pressure sensitive adhesive of the internal type does not need to contain oligomer components or the like which are low molecular weight components, or does not contain a large amount of oligomer components, and therefore, the oligomer components or the like do not migrate in the pressure sensitive adhesive over time, and a pressure sensitive adhesive layer having a stable layer structure can be formed.
The base polymer having a carbon-carbon double bond may be a base polymer having a carbon-carbon double bond and having an adhesive property, without particular limitation. As such a base polymer, a base polymer having an acrylic polymer as a basic skeleton is preferable. The basic skeleton of the acrylic polymer is exemplified by the above-mentioned acrylic polymers.
The method for introducing the carbon-carbon double bond in the acrylic polymer is not particularly limited, and various methods can be employed, but introduction of the carbon-carbon double bond into the polymer side chain is easy in molecular design. For example, a method of copolymerizing a monomer having a functional group with an acrylic polymer in advance, and then condensing or performing an addition reaction of a compound having a functional group reactive with the functional group and a carbon-carbon double bond while maintaining the radiation curability of the carbon-carbon double bond can be mentioned.
Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridine groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable from the viewpoint of easiness of reaction follow-up. In addition, the combination of these functional groups may be a combination in which the acrylic polymer having a carbon-carbon double bond is formed, and the functional group may be located on either side of the acrylic polymer and the compound. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl- α, α -dimethylbenzyl isocyanate. Further, as the acrylic polymer, a polymer obtained by copolymerizing the above-exemplified hydroxyl group-containing monomer, an ether compound of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like is used.
The internal radiation-curable pressure-sensitive adhesive may use the base polymer having a carbon-carbon double bond (particularly, an acrylic polymer) alone, but may contain a photopolymerizable compound such as the radiation-curable monomer component or oligomer component to such an extent that the properties are not deteriorated. The amount of the photopolymerizable compound is usually within a range of 30 parts by weight or less, preferably within a range of 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.
The radiation-curable adhesive preferably contains a photopolymerization initiator when cured by ultraviolet rays or the like.
Among the above acrylic polymers, CH is particularly preferred2A propane represented by CHCOOR (wherein R is an alkyl group having 4 to 8 carbon atoms)An acrylic polymer A comprising an alkenoic acid ester, a hydroxyl group-containing monomer, and an isocyanate compound having a radically reactive carbon-carbon double bond in the molecule.
When the alkyl group of the alkyl acrylate has a carbon number of less than 4, the polarity is high, the peeling force is too large, and the pickup property may be deteriorated. On the other hand, when the number of carbon atoms of the alkyl group of the alkyl acrylate exceeds 8, the adhesiveness of the pressure-sensitive adhesive layer 12 is reduced, and thus the adhesiveness or close adhesion to the metal layer 15 is reduced, and as a result, the metal layer 15 may be peeled off at the time of dicing.
The acrylic polymer a may contain units corresponding to other monomer components as needed.
In the acrylic polymer a, an isocyanate compound having a radical-reactive carbon-carbon double bond is used. That is, the acrylic polymer preferably has a structure obtained by addition reaction of an isocyanate compound having a double bond with a polymer of the monomer composition such as the above-mentioned acrylate or hydroxyl group-containing monomer. Therefore, the acrylic polymer preferably has a radically reactive carbon-carbon double bond in its molecular structure. This makes it possible to form an active energy ray-curable pressure-sensitive adhesive layer (e.g., an ultraviolet-curable pressure-sensitive adhesive layer) that is cured by irradiation with an active energy ray (e.g., ultraviolet ray), and thus to reduce the peeling force between the metal layer 15 and the pressure-sensitive adhesive layer 12.
Examples of the double bond-containing isocyanate compound include methacryloyl isocyanate, acryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, 2-acryloxyethyl isocyanate, and m-isopropenyl- α, α -dimethylbenzyl isocyanate. The double bond-containing isocyanate compound may be used alone or in combination of 2 or more.
In addition, in the active energy ray-curable adhesive, an external crosslinking agent may be suitably used in order to adjust the adhesive force before the irradiation with the active energy ray or the adhesive force after the irradiation with the active energy ray. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted. When the external crosslinking agent is used, the amount thereof is appropriately determined in accordance with the balance with the base polymer to be crosslinked and further in accordance with the use application as the adhesive. The amount of the external crosslinking agent used is generally 20 parts by weight or less (preferably 0.1 to 10 parts by weight) based on 100 parts by weight of the base polymer. Further, in addition to the above components, various conventionally known additives such as an adhesion imparting agent, an antioxidant, and a foaming agent may be added to the active energy ray-curable pressure-sensitive adhesive, if necessary.
The thickness of the pressure-sensitive adhesive layer 12 may be appropriately determined without any particular limitation, but is generally about 5 to 200 μm. The adhesive layer 12 may be formed of a single layer or a plurality of layers.
< Metal layer 14>
The metal constituting the metal layer 14 is not particularly limited, and for example, at least 1 metal selected from the group consisting of aluminum, iron, titanium, tin, nickel, and copper, and/or an alloy thereof is preferable from the viewpoint of laser marking property. Among them, copper, aluminum, or an alloy thereof has high thermal conductivity, and can also obtain an effect of heat dissipation through the metal layer. Further, copper, aluminum, iron, nickel, or an alloy thereof can also obtain a warpage-suppressing effect of the electronic device package.
The surface roughness RzJIS of the metal layer 14 based on the ten-point average roughness is 0.5 μm or more and less than 10.0 μm. By setting the surface roughness RzJIS to 0.5 μm or more, the contact area between the metal layer 14 and the adhesive layer 15 becomes large, and the metal layer 14 and the adhesive layer 15 are physically strongly adhered to each other by an anchor effect due to the unevenness of the surface of the metal layer 14, so that peeling of the metal layer 14 due to a load generated by a dicing blade or a water flow of cutting water can be prevented, and further, the adhesive layer is firmly bonded after curing, so that occurrence of a package crack at the time of a package or a reliability test can be prevented. Further, the surface roughness RzJIS is preferably 1.0 μm or more, and is preferably 2.0 μm or more from the viewpoint of more exerting the anchor effect. When the surface roughness RzJIS is less than 10.0 μm, the adhesive or the bonding agent can enter the irregularities on the surface of the metal layer 14. If the adhesive does not enter the irregularities on the surface of the metal layer 14, the portions become voids (void), and the voids become the starting points of the popcorn phenomenon (water vapor explosion) at the time of reflow or at the time of a reliability test, and a package crack occurs. In addition, the surface roughness RzJIS in the present specification is JIS B0601: 2013, attached book JA.
The thickness of the metal layer 14 may be determined appropriately in consideration of handling property and workability of the semiconductor wafer W or the semiconductor chip C, and is usually in the range of 2 to 200 μm. If the metal layer is 200 μm or less, winding processing is easy, and a metal layer of 50 μm or less is preferable in terms of contributing to thinning of the semiconductor package. On the other hand, from the viewpoint of handling properties, it is required to be at least 2 μm.
< adhesive layer 15>
The adhesive layer 15 is a layer obtained by previously forming an adhesive film.
The adhesive layer 15 is formed at least by a thermosetting resin, and preferably at least by a thermosetting resin and a thermoplastic resin.
Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, an ethylene-vinyl acetate copolymer, an ethylene-acrylic acid ester copolymer, a polybutadiene resin, a polycarbonate resin, a thermoplastic polyimide resin, a polyamide resin such as 6-nylon or 6, 6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET (polyethylene terephthalate) or PBT (polybutylene terephthalate), a polyamideimide resin, and a fluororesin. The thermoplastic resin may be used alone or in combination of 2 or more. Among these thermoplastic resins, acrylic resins, which are preferred in terms of having few ionic impurities and excellent stress relaxation properties, and phenoxy resins, which are preferred in terms of achieving both flexibility and strength and high toughness, are particularly preferred from various viewpoints because reliability of the semiconductor element can be easily ensured.
The acrylic resin is not particularly limited, and examples thereof include polymers containing 1 or 2 or more species of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms (preferably 4 to 18 carbon atoms, more preferably 6 to 10 carbon atoms, and particularly preferably 8 or 9 carbon atoms). That is, in the present invention, the acrylic resin is meant to have a broad meaning including methacrylic resin. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, a 2-ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a dodecyl group (lauryl group), a tridecyl group, a tetradecyl group, a stearyl group, and an octadecyl group.
Examples of the other monomer (other than alkyl esters of acrylic acid or methacrylic acid having an alkyl group of 30 or less carbon atoms) for forming the acrylic resin include, but are not particularly limited to, various carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid, various acid anhydride monomers such as maleic anhydride and itaconic anhydride, various hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methacrylate, and the like, And various sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid, and various phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate. The term (meth) acrylic acid means acrylic acid and/or methacrylic acid, and all of the terms (meth) in the present invention have the same meaning.
Examples of the thermosetting resin include an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin, in addition to an epoxy resin and a phenol resin. The thermosetting resin may be used alone or in combination of 2 or more. As the thermosetting resin, an epoxy resin containing a small amount of ionic impurities or the like which corrode a semiconductor element is particularly preferable. As the curing agent for the epoxy resin, a phenol resin can be suitably used.
The epoxy resin is not particularly limited, and for example, a bifunctional epoxy resin or a polyfunctional epoxy resin such as a bisphenol a type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, a brominated bisphenol a type epoxy resin, a hydrogenated bisphenol a type epoxy resin, a bisphenol AF type epoxy resin, a biphenyl type epoxy resin, a naphthalene type epoxy resin, a fluorene type epoxy resin, a novolak type epoxy resin, an o-cresol novolak type epoxy resin, a trishydroxyphenylmethane type epoxy resin, a tetraphenolethane type epoxy resin and the like, or an epoxy resin such as a hydantoin type epoxy resin, a triglycidyl isocyanurate type epoxy resin, a glycidylamine type epoxy resin and the like can be used.
As the epoxy resin, particularly preferred are the novolak type epoxy resin, the biphenyl type epoxy resin, the trishydroxyphenylmethane type epoxy resin, and the tetraphenylethane type epoxy resin among the examples. This is because these epoxy resins have sufficient reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.
Further, the phenol resin functions as a curing agent for the epoxy resin, and examples thereof include a novolak type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a t-butyl novolak resin, and a nonyl novolak resin, a resol type phenol resin, and polyhydroxystyrene such as polyparahydroxystyrene. The phenol resin may be used alone or in combination of 2 or more. Of these phenol resins, a phenol novolac resin and a phenol aralkyl resin are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.
The mixing ratio of the epoxy resin and the phenol resin is preferably such that the epoxy group in the epoxy resin component is 1 equivalent and the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents, for example. More preferably 0.8 to 1.2 equivalents. That is, if the mixing ratio of the epoxy resin and the epoxy resin is out of the above range, a sufficient curing reaction does not proceed, and the properties of the cured epoxy resin are likely to be deteriorated.
In addition, a heat curing accelerating catalyst of an epoxy resin and a phenol resin may also be used. The thermal curing accelerating catalyst is not particularly limited, and may be appropriately selected from known thermal curing accelerating catalysts. The heat curing promoting catalyst may be used alone or in combination of 2 or more. Examples of the heat curing accelerator include amine-based curing accelerators, phosphorus-based curing accelerators, imidazole-based curing accelerators, boron-based curing accelerators, and phosphorus-boron-based curing accelerators.
As the curing agent for the epoxy resin, a phenol resin is preferably used as described above, but a known curing agent such as imidazole, amine, acid anhydride, or the like may be used.
It is important that the adhesive layer 15 has adhesiveness (close adhesion) to the back surface (circuit non-formation surface) of the semiconductor wafer. Therefore, in order to crosslink the adhesive layer 15 to some extent in advance, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer or the like may be added as a crosslinking agent. This improves the adhesion properties at high temperatures, and improves the heat resistance.
The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, examples of the crosslinking agent include an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, and a peroxide crosslinking agent, and include a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent, a metal salt crosslinking agent, a carbodiimide crosslinking agent, an oxazoline crosslinking agent, an aziridine crosslinking agent, and an amine crosslinking agent. The crosslinking agent is preferably an isocyanate crosslinking agent or an epoxy crosslinking agent. Further, the above-mentioned crosslinking agents may be used alone or in combination of 2 or more.
In the present invention, the crosslinking treatment may be performed by irradiation with an electron beam, ultraviolet ray, or the like instead of or in addition to using the crosslinking agent.
Other additives may be appropriately blended in the adhesive layer 15 as needed. Examples of the other additives include fillers (fillers), flame retardants, silane coupling agents, and ion trapping agents, as well as extenders, antioxidants, and surfactants.
The filler may be either an inorganic filler or an organic filler, but is preferably an inorganic filler. By blending a filler such as an inorganic filler, the adhesive layer 15 can be improved in thermal conductivity, adjusted in elastic modulus, and the like. Examples of the inorganic filler include various inorganic powders such as ceramics including silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, and silicon nitride, metals or alloys including aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, and solder, and the like, and carbon-containing outer layers of these inorganic powders. The fillers may be used alone or in combination of 2 or more. Among these, silica and alumina are preferable as the filler, and fused silica is particularly preferable as the silica. The average particle diameter of the inorganic filler is preferably in the range of 0.1 to 80 μm. The average particle diameter of the inorganic filler can be measured by, for example, a laser diffraction particle size distribution measuring apparatus.
The amount of the filler (particularly, inorganic filler) is preferably 80 wt% or less (0 wt% to 80 wt%), and particularly preferably 0 wt% to 70 wt%, based on the organic resin component.
Further, examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. The flame retardants may be used alone or in combination of 2 or more. Examples of the silane coupling agent include β - (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, γ -glycidoxypropyltrimethoxysilane, and γ -glycidoxypropylmethyldiethoxysilane. The silane coupling agent may be used alone or in combination of 2 or more. Examples of the ion scavenger include hydrotalcite and bismuth hydroxide. The ion scavenger can be used alone or in combination of 2 or more.
From the viewpoint of adhesiveness and reliability, the adhesive layer 15 particularly preferably contains (a) an epoxy resin, (B) a curing agent, (C) a phenoxy resin, and (D) a surface-treated inorganic filler, and the content of (D) is 40% by weight or more and 65% by weight or less with respect to the total of (a) to (D).
By using the epoxy resin (A), high adhesiveness, water resistance and heat resistance can be obtained. As the epoxy resin, the above known epoxy resins can be used. (B) As the curing agent, the above-mentioned known curing agents can be used.
The phenoxy resin (C) has a molecular chain length similar to that of the epoxy resin, and functions as a flexible material in a composition having a high crosslinking density to impart high toughness thereto, and therefore, a composition having high strength and toughness can be obtained. The preferred phenoxy resin is a phenoxy resin having a bisphenol a type main skeleton, and in addition thereto, commercially available phenoxy resins such as bisphenol F type phenoxy resin, bisphenol a/F mixed type phenoxy resin, brominated phenoxy resin, and the like can be cited as preferred phenoxy resins.
Examples of the inorganic filler (D) having a surface treated include inorganic fillers having a surface treated with a silane coupling agent. As the inorganic filler, the above known inorganic filler can be used, but silica and alumina are preferable. The surface treatment with the silane coupling agent improves the dispersibility of the inorganic filler. Therefore, since the fluidity is excellent, the adhesion with the metal layer can be improved. Further, since the inorganic filler can be highly filled, the water absorption rate can be reduced and the moisture resistance can be improved.
The surface treatment of the inorganic filler with a silane coupling agent is carried out by dispersing the inorganic filler in a silane coupling agent solution by a known method, thereby reacting a hydroxyl group present on the surface of the inorganic filler with a silanol group obtained by hydrolyzing a hydrolyzable group such as an alkoxy group of the silane coupling agent to form an Si-O-Si bond on the surface of the inorganic filler.
When the content of the surface-treated inorganic filler (D) is 40 wt% or more with respect to the total of the epoxy resin (a), the curing agent (B), the phenoxy resin (C), and the surface-treated inorganic filler (D), it is preferable that the water absorption rate and the saturated moisture absorption rate are reduced, the thermal conductivity of the adhesive layer is improved, and the effect of generating heat can be obtained through the metal layer. When the content of the surface-treated inorganic filler (D) is 65 wt% or less with respect to the total of the epoxy resin (a), the curing agent (B), the phenoxy resin (C), and the surface-treated inorganic filler (D), the fluidity of the resin component can be ensured, and therefore, the surface-treated inorganic filler is preferable in that the surface-treated inorganic filler has excellent adhesion to a metal layer or a wafer.
The thickness of the adhesive layer 15 is not particularly limited, but is generally preferably 3 μm or more, more preferably 5 μm or more from the viewpoint of handling property, and is preferably 100 μm or less, more preferably 50 μm or less in order to contribute to thinning of the semiconductor package. It is preferable that the thickness is equal to or greater than the surface roughness RzJIS based on the ten-point average roughness of the metal layer 14. The thickness of the adhesive layer 15 is equal to or greater than the surface roughness RzJIS, and therefore, the adhesive layer easily enters the irregularities on the surface of the metal layer 14, and the anchor effect is easily obtained. The adhesive layer 15 may be formed of a single layer or a plurality of layers.
The peeling force (23 ℃, the peeling angle of 180 degrees, and the linear velocity of 300 mm/min) of the adhesive layer 15 from the metal layer 14 in the B-stage (uncured state or semi-cured state) is preferably 0.3N or more. If the peel force is less than 0.3N, peeling may occur between the semiconductor wafer W or the semiconductor chips C and the adhesive layer 15 or between the adhesive layer 15 and the metal layer 14 during dicing of the semiconductor wafer W, and chipping may occur in the semiconductor chips C.
The water absorption rate of the adhesive layer 15 is preferably 1.5 vol% or less. The method of measuring the water absorption is as follows. That is, an adhesive layer 15 (film-like adhesive) having a size of 50X 50mm was used as a sample, and the sample was dried in a vacuum dryer at 120 ℃ for 3 hours, left to cool in a desiccator, and then the dry mass was measured to be M1. The sample was immersed in distilled water at room temperature for 24 hours and then taken out, and the surface of the sample was wiped with filter paper and rapidly weighed as M2. The water absorption was calculated by the following formula (1).
Water absorption (vol%) [ (M2-M1)/(M1/d) ] × 100 (1)
Where d is the density of the film.
If the water absorption rate exceeds 1.5 vol%, package cracks may occur during reflow soldering due to the absorbed moisture.
The saturated moisture absorption rate of the adhesive layer 15 is preferably 1.0 vol% or less. The saturated moisture absorption rate was measured as follows. That is, a circular adhesive layer 15 (film-like adhesive) having a diameter of 100mm was used as a sample, and the sample was dried in a vacuum dryer at 120 ℃ for 3 hours, cooled in a desiccator, and then measured for dry mass M1. The sample was taken out after being allowed to absorb moisture in a constant temperature and humidity bath at 85 ℃ and 85% RH for 168 hours, and the sample was rapidly weighed to M2. The saturated moisture absorption rate was calculated by the following formula (2).
Saturated moisture absorption rate (vol%) [ (M2-M1)/(M1/d) ] × 100 (2)
Where d is the density of the film.
If the saturated moisture absorption rate exceeds 1.0 vol%, there is a possibility that the vapor pressure value increases due to moisture absorption during reflow, and thus good reflow characteristics cannot be obtained.
The residual volatile content of the adhesive layer 15 is preferably 3.0 wt% or less. The method for measuring the residual volatile components is as follows. That is, an adhesive layer 15 (film-like adhesive) having a size of 50X 50mm was used as a sample, the initial mass of the sample was measured as M1, and the sample was heated in a hot-air circulation thermostatic bath at 200 ℃ for 2 hours and then weighed as M2. The residual volatile content was calculated by the following formula (3).
Residual volatile matter (wt%) [ (M2-M1)/M1] × 100 (3)
If the residual volatile content exceeds 3.0 wt%, the solvent may volatilize due to heating during sealing, and voids may be formed in the adhesive layer 15, thereby causing cracks in sealing.
The ratio of the linear expansion coefficient of the metal layer 14 to the linear expansion coefficient of the adhesive layer 15 (linear expansion coefficient of the metal layer 14/linear expansion coefficient of the adhesive layer 15) is preferably 0.2 or more. If this ratio is less than 0.2, peeling between the metal layer 14 and the adhesive layer 15 may easily occur, and package cracks may occur during packaging, resulting in a decrease in reliability.
(diaphragm)
The separator is a film for improving the handleability of the adhesive layer 15 and protecting the adhesive layer 15. As the separator, a film of polyester (PET, PBT, PEN, PBN, PTT), polyolefin (PP, PE), copolymer (EVA, EEA, EBA), or partially substituted material thereof with further improved adhesiveness and mechanical strength can be used. Further, a laminate of these films may be used.
The thickness of the separator is not particularly limited and may be set as appropriate, but is preferably 25 to 50 μm.
(semiconductor processing tape 10)
A method of manufacturing the semiconductor processing tape 10 according to the present embodiment will be described. First, the adhesive layer 15 can be formed by a conventional method of preparing a resin composition and forming it into a film-like layer. Specifically, for example, a method of forming the adhesive layer 15 by applying the resin composition on an appropriate separator (such as release paper) and drying (in the case of heat curing or the like, heat treatment and drying are performed as necessary) may be mentioned. The resin composition may be a solution or a dispersion. Next, the obtained adhesive layer 15 is bonded to the separately prepared metal layer 14. A commercially available metal foil may be used as the metal layer 14. Thereafter, the adhesive layer 15 and the metal layer 14 are precut into a circular label shape having a predetermined size by using a guillotine, and unnecessary portions of the periphery are removed.
Subsequently, the dicing tape 13 is produced. The substrate film 11 can be formed by a conventionally known film forming method. Examples of the film forming method include a rolling film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. Next, the pressure-sensitive adhesive composition is applied to the base film 11, and dried (crosslinked by heating if necessary) to form the pressure-sensitive adhesive layer 12. Examples of the coating method include roll coating, screen coating, and gravure coating. The pressure-sensitive adhesive composition may be directly applied to the base film 11 to form the pressure-sensitive adhesive layer 12 on the base film 11, or the pressure-sensitive adhesive composition may be applied to release paper or the like whose surface has been subjected to a release treatment to form the pressure-sensitive adhesive layer 12, and then the pressure-sensitive adhesive layer 12 may be transferred to the base film 11. Thus, the dicing tape 13 having the pressure-sensitive adhesive layer 12 formed on the base film 11 was produced.
Thereafter, the dicing tape 13 is laminated on the separator provided with the circular metal layer 14 and the adhesive layer 15 so that the metal layer 14 and the adhesive layer 12 are in contact with each other, and the dicing tape 13 is also precut into a circular label shape having a predetermined size or the like as the case may be, thereby producing the tape 10 for semiconductor processing.
< method of use >
Next, a method for manufacturing a semiconductor device using the semiconductor processing tape 10 of the present embodiment will be described with reference to fig. 2.
The method for manufacturing a semiconductor device includes at least the following steps: a step (mounting step) of attaching a semiconductor wafer W to the dicing tape-integrated semiconductor processing tape 10; a step (dicing step) of dicing the semiconductor wafer W to form semiconductor chips C; a step of peeling the semiconductor chip C from the pressure-sensitive adhesive layer 12 of the dicing tape 13 together with the semiconductor processing tape 10 (pickup step), and a step of flip-chip bonding the semiconductor chip C to the adherend 16 (flip-chip bonding step).
[ mounting Process ]
First, a separator arbitrarily provided on the dicing tape-integrated semiconductor processing tape 10 is appropriately peeled off, and as shown in fig. 2 a, a semiconductor wafer W is stuck on an adhesive layer 15, adhered and held, and fixed (mounting step). At this time, the adhesive layer 15 is in an uncured state (including a semi-cured state). The dicing tape-integrated semiconductor processing tape 10 is attached to the back surface of the semiconductor wafer W. The back surface of the semiconductor wafer W is a surface (also referred to as a non-circuit surface, a non-electrode-formed surface, or the like) opposite to the circuit surface. The method of attaching is not particularly limited, but a method using pressure bonding is preferred. The pressure bonding is usually performed by pressing the edges with a pressing means such as a pressure bonding roller.
[ cutting step ]
Next, as shown in fig. 2 (B), dicing of the semiconductor wafer W is performed. In this way, the semiconductor wafer W is cut into a predetermined size and singulated (diced) to produce semiconductor chips C. Dicing is performed, for example, from the circuit surface side of the semiconductor wafer W by a conventional method. In this step, for example, a so-called full-cut cutting method may be employed in which the tape 10 for semiconductor processing is cut. The cutting device used in this step is not particularly limited, and a conventionally known cutting device can be used. Further, since the semiconductor wafer W is adhesively fixed by the semiconductor processing tape 10 with excellent adhesion, chipping and chip scattering can be suppressed, and breakage of the semiconductor wafer W can also be suppressed. When the dicing tape-integrated semiconductor processing tape 10 is expanded, the expansion can be performed by using a conventionally known expanding device.
[ pickup Process ]
As shown in fig. 2 (C), pickup of the semiconductor chip C is performed, and the semiconductor chip C is peeled off from the dicing tape 13 together with the adhesive layer 15 and the metal layer 14. The method of picking up is not particularly limited, and various conventionally known methods can be employed. Examples thereof include a method in which each semiconductor chip C is ejected from the base material film 11 side of the semiconductor processing tape 10 by a needle, and the ejected semiconductor chip C is picked up by a pickup device. In addition, the back surface of the picked-up semiconductor chip C is protected by the metal layer 14.
[ Flip chip bonding Process ]
The picked-up semiconductor chip C is fixed to an adherend 16 such as a substrate by a flip chip bonding method (flip chip mounting method) as shown in fig. 2D. Specifically, the semiconductor chip C is fixed to the adherend 16 by a conventional method in such a manner that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, or the like) of the semiconductor chip C faces the adherend 16. For example, first, flux is attached to the bumps 17, which are the connection portions, formed on the circuit surface side of the semiconductor chip C. Next, the bumps 17 of the semiconductor chip C are brought into contact with the conductive material 18 (solder or the like) for bonding adhered to the bonding pads of the adherend 16, and the bumps 17 and the conductive material 18 are melted with pressing to secure electrical conduction between the semiconductor chip C and the adherend 16, whereby the semiconductor chip C can be fixed to the adherend 16 (flip chip bonding step). In this case, a gap is formed between the semiconductor chip C and the adherend 16, and the gap distance is generally about 30 μm to 300 μm. After the semiconductor chip C is flip-chip bonded (flip-chip connected) to the adherend 16, the flux remaining on the surface of the adherend 16 facing the semiconductor chip C or in the gap is washed away, and the gap is filled with a sealing material (sealing resin or the like) and sealed.
As the adherend 16, various substrates such as a lead frame and a circuit board (such as a printed circuit board) can be used. The material of such a substrate is not particularly limited, and a ceramic substrate and a plastic substrate are exemplified. Examples of the plastic substrate include an epoxy substrate, a bismaleimide-triazine substrate, and a polyimide substrate. Further, by flip-chip connecting the semiconductor chip C with another semiconductor chip as the adherend 16, a chip on chip (chip on chip) structure can be also obtained.
< example >
Next, examples and comparative examples will be described in detail to further clarify the effects of the present invention, but the present invention is not limited to these examples.
(1) Making of dicing tapes
< dicing tape (1) >
As the acrylic copolymer having a functional group, a copolymer containing 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid and having a ratio of 2-ethylhexyl acrylate of 60 mol% and a mass average molecular weight of 70 ten thousand was prepared. Then, 2-isocyanatoethyl methacrylate was added so that the iodine value became 20 to prepare an acrylic copolymer (a-1) having a glass transition temperature of-50 ℃, a hydroxyl value of 10mgKOH/g and an acid value of 5 mgKOH/g.
A substrate film was produced by melting resin beads of a zinc ionomer (methacrylic acid content 13%, softening point 72 ℃ and melting point 90 ℃) of an ethylene-methacrylic acid copolymer synthesized by a radical polymerization method at 140 ℃ and molding the beads into a long film having a thickness of 100 μm using an extruder.
A mixture of 5 parts by mass of CORONATE L (trade name, manufactured by TOSOH CORPORATION) as a polyisocyanate and 3 parts by mass of Esacure KIP 150 (trade name, manufactured by Lamberti) as a photopolymerization initiator was dissolved in ethyl acetate and stirred to prepare an adhesive composition.
The prepared adhesive layer composition was applied to a release liner comprising a polyethylene terephthalate film subjected to mold release treatment so that the thickness after drying became 10 μm, dried at 110 ℃ for 3 minutes, and then laminated to the substrate film, thereby producing a dicing tape (1) having an adhesive layer formed on the substrate film.
(2) Preparation of adhesive layer
(adhesive composition b-1)
The epoxy resin composition comprises 20 parts by mass of "1002" (trade name, manufactured by Mitsubishi chemical corporation, solid bisphenol A type epoxy resin, epoxy equivalent of 600) as an epoxy resin, 55 parts by mass of "806" (trade name, manufactured by Mitsubishi chemical corporation, bisphenol F type epoxy resin, epoxy equivalent of 160, specific gravity of 1.20) as an epoxy resin, and 70 parts by mass of "MEH 7851-4H" (trade name, manufactured by Mitsubishi chemical corporation, biphenyl aralkyl type phenol resin) as a curing agent, methyl ethyl ketone was added to 200 parts by mass of "SO-C2" (trade name, product of ADMAFINE corporation, average particle size 0.5 μm) as a silica filler and 3 parts by mass of "AEROSIL R972" (trade name, product of Nippon AEROSIL Co., Ltd., average particle size of primary particle size 0.016 μm) as a silica filler, followed by stirring and mixing to obtain a uniform composition.
To this, 100 parts by mass of "YX 6954" (trade name, product of Mitsubishi chemical corporation, mass average molecular weight: 38,000) as a phenoxy resin, 0.6 part by mass of "KBM-802" (trade name, Shin-Etsu silicone Co., Ltd., mercaptopropyltrimethoxysilane), as a coupling agent, and 0.5 part by mass of "CUREZOL 2 PHZ-PW" (trade name, product of Sikko chemical Co., Ltd., 2-phenyl-4, 5-dihydroxymethylimidazole, decomposition temperature: 230 ℃) as a curing accelerator were added, and they were mixed by stirring until they became homogeneous. The mixture was further filtered through a 100-mesh filter and vacuum defoamed to obtain a varnish of the adhesive composition b-1.
(adhesive composition b-2)
Methyl ethyl ketone was added to a composition containing 40 parts by mass of "1002" (trade name, product of mitsubishi chemical corporation, solid bisphenol a-type epoxy resin, epoxy equivalent weight 600) as an epoxy resin, 100 parts by mass of "806" (trade name, product of mitsubishi chemical corporation, bisphenol F-type epoxy resin, epoxy equivalent weight 160, specific gravity 1.20) as an epoxy resin, 5 parts by mass of "Dyhard 100 SF" (trade name, Degussa, dicyandiamide) as a curing agent, 350 parts by mass of "SO-C2" (trade name, product of ADMAFINE corporation, average particle size 0.5 μm) as a silica filler, and 3 parts by mass of "AEROSIL R972" (trade name, Nippon AEROSIL co., ltd., product name, average primary particle size 0.016 μm) as a silica filler, followed by stirring and mixing to prepare a uniform composition.
To this, 100 parts by mass of "PKHH" (trade name, manufactured by INCHEM, Mass-average molecular weight of 52,000, and glass transition temperature of 92 ℃), 0.6 part by mass of "KBM-802" (trade name, Shin-Etsu silicone Co., manufactured by Ltd., mercaptopropyltrimethoxysilane) as a coupling agent, and 0.5 part by mass of "CUREZOL 2 PHZ-PW" (trade name, manufactured by Sikko Kagaku K.K., 2-phenyl-4, 5-dihydroxymethylimidazole, decomposition temperature of 230 ℃) as a curing accelerator were added and mixed by stirring until they became homogeneous. The mixture was further filtered through a 100-mesh filter and vacuum defoamed to obtain a varnish of the adhesive composition b-2.
< adhesive layer (1) >
The adhesive composition b-1 was applied to a separator comprising a polyethylene terephthalate film subjected to mold release treatment so that the thickness thereof after drying became 5 μm, and dried at 110 ℃ for 5 minutes to prepare an adhesive film having an adhesive layer formed on the separator.
< adhesive layer (2) >
The adhesive layer (2) was obtained in the same manner as the adhesive layer (1) except that the adhesive composition b-2 was used instead of the adhesive composition b-1.
< adhesive layer (3) >
The adhesive layer (3) was obtained in the same manner as the adhesive layer (1) except that the coating was performed so that the thickness after drying became 20 μm.
(3) Metal layer
As the metal layer, the following layers were prepared.
< Metal layer (1) >
TQ-M4-VSP (trade name, product of Mitsui Metal mining Co., Ltd., thickness of 12 μ M, surface roughness RzJIS of 0.6um)
< Metal layer (2) >
F0-WS (trade name, manufactured by Kogawa electric industries Co., Ltd., copper foil, thickness of 12 μm, surface roughness RzJIS of 1.3um)
< Metal layer (3) >
F3-WS (trade name, manufactured by Kogawa electric industries Co., Ltd., copper foil, thickness of 12 μm, surface roughness RzJIS of 2.8um)
< Metal layer (4) >
DT-GLD-STD (trade name, manufactured by Kogaku electric industries Co., Ltd., copper foil, thickness of 18 μm, surface roughness RzJIS of 9.0um)
< Metal layer (5) >
GHY5-HA (trade name, manufactured by JX Nikki Kaisha, thickness 18 μm, surface roughness RzJIS 0.3 μm)
< Metal layer (6) >
GTS-MP (trade name, manufactured by Kogaku electric industries Co., Ltd., copper foil, thickness 35 μm, surface roughness RzJIS 11.0 μm)
(4) Fabrication of semiconductor processing tape
< example 1>
The adhesive layer (1) obtained in the above manner and the metal layer (1) were bonded together under conditions of a bonding angle of 120 °, a pressure of 0.2MPa, and a speed of 10mm/s to produce a one-sided adhesive film. The dicing tape (1) was precut into a shape capable of being attached to a ring frame, the single-sided adhesive film was precut into a shape capable of covering a wafer, and the adhesive layer of the dicing tape (1) and the metal layer side of the single-sided adhesive film were attached so that the adhesive layer was exposed to the periphery of the single-sided adhesive film, thereby producing the tape for semiconductor processing of example 1.
< examples 2 to 5 and comparative examples 1 to 2>
Semiconductor processing tapes of examples 2 to 5 and comparative examples 1 to 2 were produced in the same manner as in example 1, except that the combination of the dicing tape, the adhesive composition, and the metal layer was changed to the combination described in table 1.
The semiconductor processing tapes described in examples 1 to 5 and comparative examples 1 to 2 were evaluated as follows. The results are shown in table 1.
(cutting ability)
The adhesive layer of the semiconductor processing tape described in each example and each comparative example was attached to the back surface of a silicon wafer having a thickness of 200 μm, and the tape was diced and divided into chips for evaluation having a size of 7.5mm × 7.5 mm. With respect to the cut semiconductor processing tape with chips, the presence or absence of separation of the evaluation chip with adhesive layer from the metal layer, or separation of the evaluation chips with adhesive layer and metal layer from the adhesive layer was observed. A semiconductor processing tape in which any detachment did not occur was evaluated as good as O, and a semiconductor processing tape in which any detachment occurred at any one point was evaluated as defective as X.
A silicon wafer having a thickness of 650 μm was cut into 7.5 mm. times.7.5 mm using a general conventional dicing die-bonding film (FH-900-20, manufactured by Hitachi chemical Co., Ltd.) to obtain an element for evaluation. The evaluation device chip was bonded to a silver-plated lead frame to obtain an evaluation substrate. The chips for evaluation described in the examples and comparative examples obtained by the method described in the above evaluation of the dicing ability were mounted on an element for evaluation of a substrate for evaluation under conditions of a temperature of 160 ℃, a pressure of 0.1MPa, and a time of 1 second, and 20 reliability samples of the chip-on-chip structure described in the examples and comparative examples were prepared.
After each reliability sample was treated in a constant temperature and humidity layer at 85 ℃/85% RH for 168 hours, the sample was passed through an IR (infrared) reflow furnace set so that the maximum temperature of the sample surface was 260 ℃ and 20 seconds, and the treatment of cooling by leaving at room temperature was repeated 3 times. In each of examples and comparative examples, peeling of the adhesive layer and the metal layer was observed for 20 samples subjected to the above-described treatment, and a sample in which peeling did not occur was set as good and a sample in which peeling occurred even for 1 sample was set as defective. When the presence or absence of separation was observed for each sample, the sample was observed by a reflection method using an ultrasonic probe (SAT).
[ Table 1]
Example 1 Example 2 Example 3 Example 4 Example 5 Comparative example 1 Comparative example 2
Cutting belt (1) (1) (1) (1) (1) (1) (1)
Adhesive layer (1) (1) (1) (3) (2) (1) (3)
Metal layer (1) (2) (3) (4) (3) (5) (6)
Cutting property ○ ○ ○ ○ ○ × ○
Reliability of ○ ○ ○ ○ ○ × ×
As shown in table 1, the belts for semiconductor processing according to examples 1 to 5 had good cutting properties and reliability because the surface roughness RzJIS of the metal layer was 0.6 μm or more and 9.0 μm or less, and was 0.5 μm or more and less than 10.0 μm as defined in the claims.
In contrast, the semiconductor processing tape described in comparative example 1 had poor cuttability and reliability because the surface roughness RzJIS of the metal layer was less than 0.5 μm. The belt for semiconductor processing described in comparative example 2 had a poor reliability because the surface roughness RzJIS of the metal layer was 10.0 μm or more.
Description of the symbols
10: semiconductor processing belt
11: substrate film
12: adhesive layer
13: cutting belt
14: metal layer
15: adhesive layer

Claims (3)

1. A semiconductor processing belt, comprising:
a dicing tape comprising a substrate film and an adhesive layer,
A metal layer disposed on the adhesive layer, and
an adhesive layer disposed on the metal layer and used for adhering the metal layer to the back surface of the semiconductor chip,
the metal layer has a surface roughness RzJIS of 0.5 μm or more and less than 10.0 μm based on a ten-point average roughness,
the adhesive layer contains (A) an epoxy resin, (B) a curing agent, (C) a phenoxy resin, and (D) a surface-treated inorganic filler, wherein the content of (D) is 40 to 65 wt% based on the total of the (A) to (D),
the adhesive layer has a saturated moisture absorption rate of 1.0 vol% or less and a residual volatile content of 3.0 wt% or less.
2. The semiconductor processing tape according to claim 1,
the metal layer is a copper foil.
3. The semiconductor processing tape according to claim 1 or 2,
the adhesive layer contains CH2An acrylic polymer comprising an acrylic ester represented by CHCOOR, a hydroxyl group-containing monomer, and an isocyanate compound having a radically reactive carbon-carbon double bond in the molecule, wherein R is an alkyl group having 4 to 8 carbon atoms.
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PH12017502122B1 (en) 2018-05-28
SG11201708850VA (en) 2018-07-30
PH12017502122A1 (en) 2018-05-28
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MY184346A (en) 2021-04-01
TWI636886B (en) 2018-10-01

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