CN107614641A - Semiconductor machining band - Google Patents

Semiconductor machining band Download PDF

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Publication number
CN107614641A
CN107614641A CN201680032247.9A CN201680032247A CN107614641A CN 107614641 A CN107614641 A CN 107614641A CN 201680032247 A CN201680032247 A CN 201680032247A CN 107614641 A CN107614641 A CN 107614641A
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China
Prior art keywords
metal level
semiconductor
methyl
resin
bond layer
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CN201680032247.9A
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CN107614641B (en
Inventor
青山真沙美
佐野透
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
    • C09J171/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C09J171/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C09J171/12—Polyphenylene oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04—Polyurethanes
    • C09J175/14—Polyurethanes having carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/28—Metal sheet
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

Abstract

The present invention provide cutting when can by semiconductor crystal wafer well singualtion, encapsulation when can prevent encapsulate crackle caused semiconductor machining band.The semiconductor machining band (10) of the present invention is characterised by that it has：Cutting belt (13) containing base material film (11) and adhesive phase (12), it is arranged on above-mentioned adhesive phase (12) and for protecting the metal level (14) at the back side of semiconductor chip and being arranged on above-mentioned metal level (14) and the bond layer (15) for being adhered to above-mentioned metal level (14) on the back side of semiconductor chip, the surface roughness RzJIS based on 10 mean roughness of above-mentioned metal level (14) is for 0.5 μm less than 10.0 μm.

Description

Semiconductor machining band
Technical field
The present invention relates to semiconductor machining band, more particularly to the semiconductor machining band with metal level, the gold Category layer is used for the back side for protecting the semiconductor chip installed in a manner of upside-down mounting (face down).
Background technology
In recent years, slimming, the miniaturization of semiconductor device and its encapsulation are further required.Used being referred to as The manufacture of the semiconductor device of the Method for Installation of so-called upside-down mounting (face down) mode.In upside-down mounting mode, using in circuit face On form the semiconductor chip that forms of electrode of the convex for being referred to as protuberance for ensuring conducting, circuit face upset (is fallen Dress), turn into the structure (so-called flip-chip connection) electrode being connected on substrate.
In such semiconductor device, sometimes through the semiconductor machining back side for bringing protection semiconductor chip, prevent Only damage of semiconductor chip etc. (with reference to patent document 1).And then, it is also known that have and pasted on semiconductor element via adhesive linkage The attached one side adhesive film comprising metal level and adhesive linkage (with reference to patent document 2).
The exemplary steps connected as flip-chip, it will be formed in being bonded the semiconductor chip table of semiconductor machining band Bump on face etc. is immersed in solder flux, makes protuberance and the electrode that is formed on substrate afterwards (as needed in the electrode On be also formed with bump) contact, finally melt bump and bump and electrode is carried out Reflow Soldering.Solder flux is Bump or anti-oxidation during in order to wash solder, the wetability for improving solder etc. and use.Step more than Suddenly, the good electrical connection that can be constructed between semiconductor chip and substrate.
Therefore, as even if solder flux attachment can also prevent dirt generation, the excellent semiconductor of aesthetic appearance can be manufactured The semiconductor machining band of device, it is proposed that possess bond layer with the protective layer being laminated on the bond layer and by glass Change flip-chip semiconductor back side film (ginseng of the transition temperature for more than 200 DEG C of heat-resistant resin or metal composition protective layer According to patent document 3).
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2007-158026 publications
Patent document 2：Japanese Unexamined Patent Publication 2007-235022 publications
Patent document 3：Japanese Unexamined Patent Publication 2012-033626 publications
The content of the invention
Invent problem to be solved
As described in Patent Document 1, make to include radiation-curable composition or Thermocurable by radioactive ray or heat The resin solidification of composition and when forming diaphragm, because the diaphragm after solidification and the coefficient of thermal expansion differences of semiconductor crystal wafer are big, So the problem of in the presence of warpage is produced in the semiconductor crystal wafer or semiconductor chip in way is processed.
However, in above-mentioned patent document 2 or patent document 3, the protective layer of metal and the bonding force of bond layer are not filled Point, in encapsulation, produce the problem of encapsulation crackle, reliability decrease are produced between protective layer and bond layer.In addition, special In sharp document 3, also disclose that and matcoveredn is set on the adhesive phase for the cutting belt that adhesive phase is laminated with base material and glued Connect the flip-chip semiconductor back side film of oxidant layer.Use such dicing tape integrated flip-chip semiconductor back side film When, the bonding force of protective layer and adhesive phase is insufficient, when semiconductor crystal wafer monolithic to be melted into the cutting of shaped like chips, exists Be peeling between protective layer and adhesive phase, can not by semiconductor crystal wafer well singualtion the problem of.
Therefore, problem of the invention be to provide cutting when can by semiconductor crystal wafer well singualtion, encapsulation when The caused semiconductor machining band of crackle can be prevented from encapsulating.
For solving the scheme of problem
In order to solve the problem of the above, semiconductor machining band of the present invention is characterised by, it, which has, contains base The cutting belt of material film and adhesive phase, the metal level being arranged on above-mentioned adhesive phase and it is arranged on above-mentioned metal level and uses In by the bond layer at the back side of above-mentioned metal bonding layer to semiconductor chip, above-mentioned metal level based on 10 mean roughness Surface roughness RzJIS for 0.5 μm less than 10.0 μm.
Above-mentioned semiconductor machining is copper foil with the preferred above-mentioned metal level of band.
In addition, the above-mentioned preferred above-mentioned bond layer of semiconductor machining band contains (A) epoxy resin, (B) curing agent, (C) Phenoxy resin and (D) surface treated inorganic filling material, the content of above-mentioned (D) is relative to the total of above-mentioned (A)~(D) It is calculated as more than 40 weight % and below 65 weight %.
In addition, the preferred above-mentioned adhesive phase of semiconductor machining band contains by CH2(in formula, R is carbon number to=CHCOOR For 4~8 alkyl.) represented by acrylate, hydroxyl monomer and intramolecular there is free-radical reactive carbon-to-carbon double bond Isocyanate compound form acrylic acid series polymeric compounds.
Invention effect
According to the present invention, semiconductor crystal wafer singualtion well be able to can be prevented from encapsulating in encapsulation in cutting The generation of crackle.
Brief description of the drawings
Fig. 1 is the profile for the structure for schematically showing the semiconductor machining band described in embodiments of the present invention.
Fig. 2 is the profile for illustrating the application method of the semiconductor machining band described in embodiments of the present invention.
Embodiment
Hereinafter, embodiments of the present invention are described in detail.
Fig. 1 is the profile for representing the semiconductor machining band 10 described in embodiments of the present invention.The semiconductor machining There is the cutting belt 13 comprising base material film 11 and the adhesive phase 12 being arranged on base material film 11 with band 10, in adhesive phase 12 On, it is provided with for the metal level 14 for protecting semiconductor chip C (reference picture 2) and the bond layer being arranged on metal level 14 15。
Protected by barrier film (release liner) in the face of the side preferably opposite with the face to connect with metal level 14 of bond layer 15 (not shown).Barrier film has as protection bond layer 15 until the function of the protected material for practicality.In addition, barrier film is partly being led Body processing is used in the manufacturing process of band 10, can be as the support when being bonded metal level 14 on the adhesive phase 12 of cutting belt 13 Base material uses.
Cutting belt 13, metal level 14 and bond layer 15 can also compare using process or device and be initially switched off (pre-cut in advance It is disconnected) established practice setting shape.And then semiconductor machining band 10 of the invention can be the cut-off shapes of every 1 amount semiconductor crystal wafer W The sheet material of state or multiple the formed strips of material obtained from every 1 amount semiconductor crystal wafer W is cut off coils into The form of roll.Hereinafter, each inscape is illustrated.
<Base material film 11>
As base material film 11, as long as known base material film can then use without particular limitation, but radiation is being used In the case that the material of line curability is as adhesive phase 12 described later, preferably using the base material film with radioactive ray permeability.
For example, as its material, polyethylene, polypropylene, ethylene-propylene copolymer, poly 1-butene, poly- 4- can be included Methyl-1-pentene, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymerization The homopolymer or copolymer or their mixture of the alpha-olefins such as thing, ethylene-acrylic acid copolymer, ionomer, polyurethane, benzene second The thermoplastic elastomer (TPE) such as alkene-Ethylene/Butylene or amylene based copolymer, polyamide-polyol copolymer and their mixture. In addition, base material film 11 can be the base material film that the material of more than two kinds in their group is obtained by mixing or it Base material film obtained from single or multiple lift.
The thickness of base material film 11 is not particularly limited, and can suitably set, but preferably 50~200 μm.
In order that the adaptation of base material film 11 and adhesive phase 12 improves, chromic acid can also be implemented to the surface of base material film 11 Chemical surface treatment or the physical surfaces such as processing, ozone exposure, fire exposure, high-voltage electric shock exposure, ionizing radiation processing Processing.
In addition, in the present embodiment, be provided directly with adhesive phase 12 on base material film 11, but can also via for Anchor layer of machinability, stress relaxation layer, antistatic backing when improving the prime coat of adaptation, being cut for improving etc. and it is indirect Ground is set.
<Adhesive phase 12>
As the resin used in adhesive phase 12, it is not particularly limited, the known chlorination used in adhesive can be used Acrylic resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin etc., but preferably made with acrylic acid series polymeric compounds Based on polymer acrylic adhesive.
As acrylic acid series polymeric compounds, can include for example using (methyl) alkyl acrylate (for example, (methyl) propylene Sour methyl esters, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) isopropyl acrylate, (methyl) butyl acrylate, (methyl) isobutyl acrylate, (methyl) sec-butyl acrylate, (methyl) tert-butyl acrylate, (methyl) amyl acrylate, (first Base) isoamyl acrylate, (methyl) Hexyl 2-propenoate, (methyl) heptylacrylate, (methyl) 2-ethyl hexyl acrylate, (methyl) propylene Sour 2- ethylhexyls, (methyl) Isooctyl acrylate monomer, (methyl) acrylic acid nonyl ester, (methyl) decyl acrylate, (methyl) third Olefin(e) acid isodecyl ester, (methyl) acrylic acid hendecane base ester, (methyl) dodecylacrylate, (methyl) acrylic acid tridecyl Ester, (methyl) acrylic acid tetradecane base ester, (methyl) aliphatic acrylate, (methyl) octadecyl acrylate, (first Base) alkyl such as acrylic acid eicosane base ester carbon number be 1~30, the straight-chain or branch that particularly carbon number is 4~18 Arrcostab of chain etc.) and (methyl) acrylate base ester (for example, cyclopentyl ester, cyclohexyl ester etc.) in a kind or 2 kinds with On acrylic acid series polymeric compounds as monomer component etc..In addition, so-called (methyl) acrylate refers to acrylate and/or methyl Acrylate, so-called (methyl) all same meanings of the invention.
For the modification of cohesiveness, heat resistance etc., acrylic acid series polymeric compounds can also as needed include with can with it is upper State unit corresponding to (methyl) alkyl acrylate or the other monomers composition of cycloalkyl ester copolymerization.As such monomer into Point, such as acrylic acid, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) acrylic acid carboxyl pentyl ester, clothing can be included The carboxylic monomers such as health acid, maleic acid, fumaric acid, crotonic acid；The anhydride monomers such as maleic anhydride, itaconic anhydride；(methyl) third Olefin(e) acid 2- hydroxy methacrylates, (methyl) acrylic acid 2- hydroxy propyl esters, (methyl) acrylic acid 4- hydroxybutyls, (methyl) acrylic acid 6- hydroxyls The own ester of base, (methyl) acrylic acid 8- hydroxyls monooctyl ester, (methyl) acrylic acid 10- hydroxyls last of the ten Heavenly stems ester, (methyl) acrylic acid 12- hydroxylaurics The monomer of the hydroxyls such as ester, (4- Hydroxymethyl-cyclo-hexyls) methyl (methyl) acrylate；Styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, (methyl) sulfopropyl acrylate, (first Base) propane sulfonic acid etc. contains sulfonic monomer；The monomer of the phosphorous acidic groups such as 2- hydroxyethyl acryloyl phosphates； Acrylamide, acrylonitrile etc..These monomer components that can be copolymerized can use one kind or two or more.These lists that can be copolymerized The usage amount of body is preferably below the 40 weight % of total monomer composition.
And then because acrylic acid series polymeric compounds are crosslinked, so multi-functional monomer etc. can also be as desired as altogether Poly- monomer component and comprising.As such multi-functional monomer, such as hexane diol two (methyl) acrylic acid can be included Ester, (poly-) ethylene glycol two (methyl) acrylate, (poly-) propane diols two (methyl) acrylate, neopentyl glycol two (methyl) propylene Acid esters, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) third Olefin(e) acid ester, dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, amino Formic acid esters (methyl) acrylate etc..These multi-functional monomers can also use one kind or two or more.From the side such as adhesion characteristic Face is set out, and the usage amount of multi-functional monomer is preferably below the 30 weight % of total monomer composition.
The preparation of acrylic acid series polymeric compounds for example can be applicable solution to the mixture of one kind or two or more element monomers The appropriate mode such as polymerization methodses or emulsion polymerization way, polymerisation in bulk mode or suspension polymerisation mode and carry out.From preventing crystalline substance Round pollution etc. is set out, and adhesive phase 12 preferably inhibits the composition contained of low molecular weight substance, goes out in terms of described Hair, the acrylic acid series polymeric compounds preferably using weight average molecular weight as more than 300,000, particularly 400,000~3,000,000 are used as main component Composition, therefore, the appropriate cross-linking type using internal crosslinking mode or outside crosslinking method etc. can also be made in adhesive.
In addition, improving pick to control the crosslink density of adhesive phase 12, can use for example using more officials Can isocyanates based compound, multi-functional epoxy's based compound, melamine based compound, metal salt based compound, metal chelating The mode of the appropriate external crosslinker progress crosslinking Treatment such as compound based compound, amino resins based compound or peroxide, Or irradiation for mixing the low molecular compound with more than 2 carbon-to-carbon double bonds and passing through energy-ray etc. carries out crosslinking Treatment The appropriate mode such as mode.During using external crosslinker, its usage amount according to the balance of the base polymer with that should be crosslinked, And then suitably determined according to the use as adhesive.Typically, it is excellent relative to the above-mentioned parts by weight of base polymer 100 Apolegamy closes that 5 parts by weight or so are following and then 0.1 parts by weight~5 parts by weight.In addition, in adhesive, go out from the viewpoints such as deterioration are prevented Hair, as needed, in addition to mentioned component, the additives such as various bonding imparting agents, antiaging agent can also be used.
As the adhesive for forming adhesive phase 12, preferably radiation-curing type adhesive.Glued as radiation-curing type Mixture, the oligomeric of the monomer component for having coordinated radiation-curable in above-mentioned adhesive or radiation-curable can be exemplified The radiation-curing type adhesive of the addition type of thing composition.
As the monomer component of the radiation-curable of cooperation, such as carbamate (methyl) acrylic acid can be included Ester, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, pentaerythrite three (methyl) Acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol Six (methyl) acrylate, 1,4- butanediols two (methyl) acrylate etc..These monomer components can with it is one kind or two or more simultaneously With.
In addition, the oligomer composition of radiation-curable can include carbamate system, polyethers system, Polyester, poly- carbon The various oligomer such as acid esters system, polybutadiene system, its molecular weight are that the oligomer of 100~30000 or so scope is appropriate. The monomer component of radiation-curable or the use level of oligomer composition can be determined according to the species of above-mentioned adhesive phase come appropriate Surely the amount of the bonding force of adhesive phase can be reduced.Typically, it is poly- relative to the basis such as acrylic acid series polymeric compounds for forming adhesive The parts by weight of the parts by weight of compound 100, for example, 5 parts by weight~500, the parts by weight of preferably 70 parts by weight~150 or so.
In addition, as radiation-curing type adhesive, in addition to the radiation-curing type adhesive of above-mentioned addition type, go back Can include used in polymer lateral chain or main chain or main chain terminal there is the polymer of carbon-to-carbon double bond based on polymerize The radiation-curing type adhesive of the inherent type of thing.The radiation-curing type adhesive of inherent type is due to that need not contain low molecule Composition is oligomer composition etc. or not comprising many, thus no oligomer composition etc. through when moved in adhesive, can The adhesive phase of stable Rotating fields is formed, therefore preferably.
Base polymer with carbon-to-carbon double bond can without particular limitation use with carbon-to-carbon double bond and with viscous The base polymer of conjunction property.As such base polymer, the basis of basic framework is used as preferably using acrylic acid series polymeric compounds Polymer.As the basic framework of acrylic acid series polymeric compounds, foregoing illustrative acrylic acid series polymeric compounds can be included.
The introductory technique of carbon-to-carbon double bond in acrylic acid series polymeric compounds is not particularly limited, and can use various methods, but Carbon-to-carbon double bond imports easy in MOLECULE DESIGN in polymer lateral chain.It can include for example in advance on acrylic acid series polymeric compounds After monomer of the copolymerization with functional group, making to have can tie up with the functional group of the functional group reactionses and the compound of carbon-to-carbon double bond Hold the method for condensation or addition reaction in the state of the radiation-curable of carbon-to-carbon double bond.
As the example of the combination of these functional groups, carboxylic acid group and epoxy radicals, carboxylic acid group and aziridine can be included Base, hydroxyl and NCO etc..In the combination of these functional groups, from the easiness of reactive tracing, hydroxyl and isocyanide The combination of perester radical is suitable.In addition, by the combination of these functional groups, as long as generation is above-mentioned with carbon-to-carbon double bond Acrylic acid series polymeric compounds are such to be combined, then functional group can also be located at any in acrylic acid series polymeric compounds and above-claimed cpd Side, but in above-mentioned preferable combination, acrylic acid series polymeric compounds are with the feelings of hydroxyl and above-claimed cpd with NCO Condition is suitable.In this case, as the isocyanate compound with carbon-to-carbon double bond, such as methacryl can be included Based isocyanate, 2- methacryloxyethyls isocyanates, an isopropenyl-bis (alpha, alpha-dimethylbenzyl) based isocyanate etc.. In addition, as acrylic acid series polymeric compounds, using by the monomer of foregoing illustrative hydroxyl or 2- hydroxyethyl vinyl ethers, 4- hydroxyls Base butyl vinyl ether, diethylene glycol monovinyl base ether the copolymerization such as ether based compound obtained from polymer.
The radiation-curing type adhesive of inherent type can be used alone the above-mentioned base polymer with carbon-to-carbon double bond (particularly acrylic acid series polymeric compounds), but can also be not make the degree that characteristic deteriorates coordinate the monomer of above-mentioned radiation-curable The photopolymerizable compound such as composition or oligomer composition.The use level of the photopolymerizable compound is commonly angled relative to base polymer 100 parts by weight are in the scope below 30 parts by weight, in the range of preferably 0~10 parts by weight.
In radiation-curing type adhesive, in the case where solidifying it by ultraviolet etc., preferably comprise photopolymerization and draw Send out agent.
In above-mentioned acrylic acid series polymeric compounds, particularly preferably by CH2(in formula, R is that carbon number is 4~8 to=CHCOOR Alkyl.) represented by acrylate, the monomer of hydroxyl, intramolecular there is the isocyanic acid of free-radical reactive carbon-to-carbon double bond The acrylic acid series polymeric compounds A that ester compounds are formed.
If the carbon number of the alkyl of alkyl acrylate is less than 4, polarity is high sometimes and peeling force becomes too much and picked up Taking property declines.On the other hand, if the carbon number of the alkyl of alkyl acrylate is more than 8, due to the viscosity of adhesive phase 12 Diminish, so declining with the cementability or adaptation of metal level 15, as a result, producing the stripping of metal level 15 in cutting sometimes From.
Aforesaid propylene acid based polymer A can also include unit corresponding with other monomers composition as needed.
In acrylic acid series polymeric compounds A, the isocyanate compound with free-radical reactive carbon-to-carbon double bond is used.That is, Acrylate copolymer preferably has the monomer of double bond containing isocyanate compound with utilizing aforesaid propylene acid esters or hydroxyl etc. Composition obtained from the polymer addition reaction of monomer composition.Therefore, acrylic acid series polymeric compounds are preferably in its molecular structure With free-radical reactive carbon-to-carbon double bond.Thus, it is possible to it is made by the irradiation of active energy beam (ultraviolet etc.) to solidify Active energy ray curable adhesive phase (ultraviolet-curing adhesive layer etc.), metal level 15 and adhesive phase can be made 12 peeling force declines.
As double bond containing isocyanate compound, such as methacryloyl isocyanate, acryloyl group can be included Isocyanates, 2- methacryloxyethyls isocyanates, 2- acryloyloxyethyl isocyanates, an isopropenyl-α, α-dimethylbenzyl isocyanates etc..Double bond containing isocyanate compound may be used singly or in combination of two or more.
In addition, in active energy ray curable adhesive, in order to adjust the bonding force of active energy beam pre-irradiation or Bonding force after active energy beam irradiation, can also suitably use external crosslinker.Specific hand as outside cross-linking method Section, addition polyisocyanate compounds, epoxide, nitrogen heterocycle propane compound, melamine series crosslinking agent can be included Etc. so-called crosslinking agent and make its react method.When using external crosslinker, its usage amount is according to the base with that should be crosslinked The balance of plinth polymer and then suitably determined according to the use as adhesive.The usage amount of external crosslinker is general It is below 20 parts by weight (preferably 0.1 parts by weight~10 parts by weight) relative to the above-mentioned parts by weight of base polymer 100.And then In active energy ray curable adhesive, as needed, in addition to mentioned component, it can also coordinate known various Bond the additives such as imparting agent, antiaging agent, foaming agent.
The thickness of adhesive phase 12 can determine suitably without particular limitation, but generally 5~200 μm or so.In addition, Adhesive phase 12 can be made up of individual layer, can also be made up of multilayer.
<Metal level 14>
As the metal for forming metal level 14, it is not particularly limited, is selected from the group being made up of aluminium, iron, titanium, tin, nickel and copper In at least one kind of metal and/or their alloy it is preferred from laser marking aspect.In them, copper, aluminium or they Alloy heat conductivity is high, also the effect of the available heat release via metal level.In addition, copper, aluminium, iron, nickel or their alloy are also It can obtain the warpage inhibition of rate electronics packages.
The surface roughness RzJIS based on 10 mean roughness of metal level 14 is 0.5 μm less than 10.0 μm. By the way that surface roughness RzJIS is set as into more than 0.5 μm, because the contact area of metal level 14 and bond layer 15 becomes big, By anchoring effect caused by the bumps on the surface as metal level 14, metal level 14 is physically tough close with bond layer 15 Close, so the current of load or cutting water caused by reason cutting blade can be prevented and cause metal level 14 to be peeled off, in addition by It is securely engaged after the solidification in bond layer, so can prevent that encapsulation is produced during the experiment in encapsulation or reliability to be split Line.And then surface roughness RzJIS is preferably more than 1.0 μm, if more than 2.0 μm, then anchoring effect is larger being played Aspect is preferred.In addition, if surface roughness RzJIS is less than 10.0 μm, bonding agent or adhesive can enter metal level 14 In the bumps on surface.If bonding agent is not entered into the bumps on the surface of metal level 14, the part becomes space (void), should Space backflow when or reliability experiment when turn into puffed rice phenomenon (water vapour blast) starting point, produce encapsulate crackle.Separately Outside, the surface roughness RzJIS in this specification is JIS B 0601：10 average roughness specified in 2013 attached book JA Degree.
The thickness of metal level 14 can contemplate semiconductor crystal wafer W or semiconductor chip C treatability and processability etc. and fit Work as decision, usually 2~200 μm of scope.If metal level is less than 200 μm, handling ease, less than 50 μm of situation are batched It is preferred in terms of the slimming that can aid in semiconductor packages.On the other hand, it is minimum also to need from the viewpoint of treatability Want more than 2 μm.
<Bond layer 15>
Bond layer 15 is by layer obtained from the advance membranization of bonding agent.
Bond layer 15 is formed at least through heat-curing resin, preferably at least passes through heat-curing resin and thermoplasticity Resin and formed.
As thermoplastic resin, such as natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, second can be included Alkene-vinyl acetate co-polymer, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polybutadiene, poly- carbonic acid The polyamides such as ester resin, thermoplastic polyimide resin, 6- nylon or 6,6- nylon, phenoxy resin, acrylic resin, The saturated polyester resin such as PET (polyethylene terephthalate) or PBT (polybutylene terephthalate (PBT)), polyamide acyl are sub- Polyimide resin or fluororesin etc..Thermoplastic resin can be used alone or be two kinds or more use.In these thermoplastic resins, Preferable acrylic resin in terms of and stress retentivity few in ionic impurity is excellent, taking into account flexible and intensity and high tenacity The preferable phenoxy resin of aspect, from each viewpoint consider due to can it is easy to ensure that the reliability of semiconductor element, so Particularly preferably.
As acrylic resin, be not particularly limited, can include using with carbon number as less than 30 (preferably carbon atoms Number is 4~18, the alkyl that further preferred carbon number is 6~10, particularly preferred carbon number is 8 or straight or branched 9) Acrylic or methacrylic acid ester in the one kind or two or more polymer as composition etc..I.e., in the present invention, it is so-called Acrylic resin is the meaning of the also broad sense comprising methacrylic resin.As abovementioned alkyl, such as methyl, second can be included It is base, propyl group, isopropyl, normal-butyl, the tert-butyl group, isobutyl group, amyl group, isopentyl, hexyl, heptyl, 2- ethylhexyls, octyl group, different Octyl group, nonyl, isononyl, decyl, isodecyl, undecyl, dodecyl (lauryl), tridecyl, myristyl, tristearin Base, octadecyl etc..
In addition, as the other monomers for forming acrylic resin, (carbon number for removing alkyl is less than 30 propylene Acid or methacrylic acid Arrcostab beyond monomer), be not particularly limited, can include for example acrylic acid, methacrylic acid, The various carboxylic monomers such as carboxyethyl acrylates, acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid or crotonic acid, The various anhydride monomers such as maleic anhydride or itaconic anhydride, (methyl) acrylic acid 2- hydroxy methacrylates, (methyl) acrylic acid 2- hydroxyls third Ester, (methyl) acrylic acid 4- hydroxybutyls, the own ester of (methyl) acrylic acid 6- hydroxyls, (methyl) acrylic acid 8- hydroxyls monooctyl ester, (first Base) acrylic acid 10- hydroxyls last of the ten Heavenly stems ester, (methyl) acrylic acid 12- hydroxylaurics ester or (4- Hydroxymethyl-cyclo-hexyls)-methacrylic acid The monomer of the various hydroxyls such as ester, styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamide-2-methyl propane sulfonic, (first Base) acrylamide propane sulfonic acid, (methyl) sulfopropyl acrylate or (methyl) propane sulfonic acid etc. are various contains sulfonic group Monomer or the monomer of various phosphorous acidic groups such as 2- hydroxyethyl acryloyl phosphates etc..In addition, so-called (methyl) acrylic acid Refer to acrylic acid and/or methacrylic acid, so-called (methyl) all same meanings of the invention.
In addition, as heat-curing resin, in addition to epoxy resin, phenolic resin, amino resins, insatiable hunger can be included With polyester resin, polyurethane resin, organic siliconresin, Thermocurable polyimide resin etc..Heat-curing resin can be independent Using or two or more and with use.As heat-curing resin, particularly preferably make ionic impurity of semiconductor element corrosion etc. Contain few epoxy resin.In addition, the curing agent as epoxy resin, can suitably use phenolic resin.
As epoxy resin, it is not particularly limited, such as bisphenol A type epoxy resin, bisphenol F type epoxy tree can be used Fat, bisphenol-s epoxy resin, brominated bisphenol a type epoxy resin, bisphenol-A epoxy resin, bisphenol AF type epoxy resin, Biphenyl type epoxy resin, naphthalene type epoxy resin, fluorenes type epoxy resin, novolac type epoxy resins, o-cresol phenol Two functional epoxy resins such as aldehyde type epoxy resin, trihydroxy benzene methylmethane type epoxy resin, four phenylol ethane type epoxy resin Or polyfunctional epoxy resin or hydantoins type epoxy resin, triglycidyl group isocyanurate type epoxy resin or shrink The epoxy resin such as glyceramine type epoxy resin.
As epoxy resin, phenolic resin varnish type epoxy resin, biphenyl type epoxy resin, trihydroxy in particularly preferably illustrating Phenylmethane type epoxy resin, four phenylol ethane type epoxy resin.This be due to these epoxy resin with as curing agent The reactivity of phenolic resin is sufficient, and heat resistance etc. is excellent.
And then phenolic resin is the material to be worked as the curing agent of epoxy resin, such as line style phenolic aldehyde can be included Varnish gum, phenol aralkyl resin, cresol novolaks, tert-butyl group phenolic novolac, nonyl line style phenolic aldehyde Polycarboxylated styrenes such as the novolak phenolics such as varnish gum, resol type phenol resin, poly(4-hydroxystyrene) etc..Phenol Urea formaldehyde can be used alone or be two kinds or more use.Novolac tree in these particularly preferred phenolic resin Fat, phenol aralkyl resin.This is due to the connection reliability that can improve semiconductor device.
The mixing ratio of epoxy resin and phenolic resin is for example preferably according to every 1 equivalent of epoxy radicals in epoxy resin ingredient And the mode that the hydroxyl in phenolic resin turns into the equivalent of 0.5 equivalent~2.0 coordinates.The equivalent of more preferably 0.8 equivalent~1.2.That is, if Both mixing ratios depart from above range, then without sufficient curing reaction is carried out, the characteristic of epoxy resin cured product becomes Easily deterioration.
In addition it is also possible to use epoxy resin and the thermal curing accelerator of phenolic resin.Promote to urge as heat cure Agent, it is not particularly limited, can suitably selects to use from known thermal curing accelerator.Thermal curing accelerator It may be used singly or in combination of two or more.As thermal curing accelerator, such as amine system solidification can be used to promote Agent, phosphorus system curing accelerator, imidazoles system curing accelerator, boron system curing accelerator, phosphorus-boron system curing accelerator etc..
As the curing agent of epoxy resin, phenolic resin is preferably used as described above, but can also use imidazoles, amine Curing agent known to class, anhydrides etc..
It is weight that bond layer 15 has cementability (adaptation) relative to the back side (the non-formation face of circuit) of semiconductor crystal wafer Want.Therefore, in order that bond layer 15 in advance to be crosslinked to a certain degree, can also add and the molecule chain end of polymer The multi-functional compounds of the reactions such as functional group are as crosslinking agent.Thereby, it is possible to improve the adhesion properties under high temperature, seek heat-resisting The improvement of property.
As crosslinking agent, it is not particularly limited, known crosslinking agent can be used.Specifically, such as except isocyanic acid Beyond ester system crosslinking agent, epoxy crosslinking agent, melamine series crosslinking agent, peroxide system crosslinking agent, Urea Series can be included Crosslinking agent, metal alkoxide system crosslinking agent, metallo-chelate system crosslinking agent, metal salt system crosslinking agent, carbodiimides system crosslinking agent, Oxazoline system crosslinking agent, aziridine system crosslinking agent, amine system crosslinking agent etc..As crosslinking agent, the crosslinking of preferred isocyanate system Agent or epoxy crosslinking agent.In addition, above-mentioned crosslinking agent can be used alone or two or more is applied in combination.
In addition, in the present invention, can also instead of using crosslinking agent or while using crosslinking agent by electric wire or The irradiation of ultraviolet etc. and implement crosslinking Treatment.
In bond layer 15, it can suitably coordinate other additives as needed.As other additives, such as except Beyond filler (filler), fire retardant, silane coupler, ion capturing agent, extender, antiaging agent, anti-oxidant can be included Agent, surfactant etc..
Can be any one of inorganic filler, organic filler as filler, but preferred inorganic filler.It is logical The fillers such as cooperation inorganic filler are crossed, the raising of heat conductivity, regulation of modulus of elasticity etc. can be sought bond layer 15. As inorganic filler, such as silica, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, beryllium oxide, carbon can be included The metals such as the ceramic-likes such as SiClx, silicon nitride, aluminium, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, solder or alloy type, this outsourcing Various inorganic powders of carbon containing grade etc..Filler can be used alone or be two kinds or more use.As filler, wherein, It is preferred that silica or aluminum oxide, as silica, particularly preferred fused silica.In addition, inorganic filler is averaged Particle diameter is preferably in the range of 0.1 μm~80 μm.The average grain diameter of inorganic filler can be for example, by laser diffraction type granularity Distribution measurement device is measured.
The use level of filler (particularly inorganic filler) is preferably below 80 weight % relative to organic resin constituent (0 weight %~80 weight %), the weight % of particularly preferably 0 weight %~70.
In addition, as fire retardant, can include such as antimony trioxide, antimony pentaoxide, brominated epoxy resin.Fire retardant can To be used alone or be two kinds or more use.As silane coupler, such as β-(3,4- epoxycyclohexyl) second can be included Base trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxypropyl diethoxy silicon Alkane etc..Silane coupler can be used alone or be two kinds or more use.As ion capturing agent, such as water can be included Talcs, bismuth hydroxide etc..Ion capturing agent can be used alone or be two kinds or more use.
From the viewpoint of cementability and reliability, bond layer 15 particularly preferably solidifies containing (A) epoxy resin, (B) Agent, (C) phenoxy resin and (D) surface treated inorganic filling material and (D) content are total relative to (A)~(D's) It is calculated as more than 40 weight % and below 65 weight %.
By using (A) epoxy resin, high cementability, water resistance, heat resistance can obtain., can be with as epoxy resin Use above-mentioned known epoxy resin.(B) curing agent can use above-mentioned known curing agent.
On (C) phenoxy resin, due to the molecular chain length of phenoxy resin and similar to epoxy resin structural, handed in height Join and worked in the composition of density as flexible material, high tenacity is assigned, so can obtain the composition of high intensity and toughness. Preferable phenoxy resin is the phenoxy resin that main framing is bisphenol A-type, but can also include bisphenol-f type benzene oxygen in addition Base resin, bisphenol-A/commercially available phenoxy resin such as F mixed types phenoxy resin or bromination phenoxy resin are as preferable benzene Epoxide resin.
As (D) surface treated inorganic filling material, it can include and surface treatment has been carried out with silane coupler Inorganic filler.As inorganic filling material, above-mentioned known inorganic filler can be used, but preferably silica, Aluminum oxide.By being surface-treated with silane coupler, the dispersiveness of inorganic filler becomes good.Therefore, because flowing Property is excellent, so the bonding force with metal level can be improved.Further, since the high filling of inorganic filler can be made, so can Reduce water absorption rate and improve moisture-proof.
Using silane coupler inorganic filling material surface treatment by using known method, by making inorganic fill out Fill material to be distributed in silane coupler solution, so that the hydroxyl and silane coupler that are present on the surface of inorganic filler The hydrolysising group such as alkoxy be hydrolyzed obtained from silanol group reaction and in the Surface Creation Si-O-Si of inorganic filler Key, thus carry out.
By by the content of (D) surface treated inorganic filling material relative to (A) epoxy resin, (B) curing agent, (C) total of phenoxy resin and (D) surface treated inorganic filling material is set as more than 40 weight %, can make suction Water rate, saturation hydroscopicity decline, and the heat conductivity of bond layer improves and in the effect that can be also generated heat via metal level in addition The aspect of fruit is preferred.By the way that the content of (D) surface treated inorganic filling material is solidified relative to (A) epoxy resin, (B) The total of agent, (C) phenoxy resin and (D) surface treated inorganic filling material is set as below 65 weight %, due to also The mobility brought by resin component is able to ensure that, so preferred excellent with the bonding force of metal level or wafer in terms of.
The thickness of bond layer 15 is not particularly limited, but is preferably more than 3 μm generally from the viewpoint of treatability, more Preferably more than 5 μm, in order to contribute to the slimming of semiconductor packages, preferably less than 100 μm, more preferably less than 50 μm. Furthermore it is preferred that with the equal thickness above of the surface roughness RzJIS based on 10 mean roughness with metal level 14.It is logical Cross the thickness of bond layer 15 and surface roughness RzJIS it is equal more than, in the bumps on the surface for being easily accessible metal level 14, hold It is easy to get to anchoring effect.In addition, bond layer 15 can be made up of individual layer, can also be made up of multilayer.
In addition, peeling force of the bond layer 15 preferably under B ranks (its uncured state or semi-cured state) with metal level 14 (23 DEG C, peel angle be 180 degree, linear speed be 300mm/ minutes) be more than 0.3N.If peeling force is less than 0.3N, in semiconductor During wafer W cutting, it is possible between semiconductor crystal wafer W or semiconductor chip C and bond layer 15 or bond layer 15 with It is peeling between metal level 14 and chip (defect) is produced in semiconductor chip C.
The water absorption rate of bond layer 15 is preferably below 1.5vol%.The assay method of water absorption rate is as described below.That is, with 50 The bond layer 15 (film-like adhesive) of × 50mm size is used as sample, makes sample in vacuum drier, 120 DEG C, drying 3 Hour, after being let cool in desiccator, measure dry mass is set to M1.Taken after sample is soaked into 24 hours at room temperature in distilled water Go out, sample surfaces are wiped with filter paper, quick weighing is set to M2.Water absorption rate is calculated by following formula (1).
Water absorption rate (vol%)=[(M2-M1)/(M1/d)] × 100 (1)
Wherein, d is the density of film.
If water absorption rate is more than 1.5vol%, it is likely that produces encapsulation crackle in Reflow Soldering because of the moisture absorbed.
The saturation hydroscopicity of bond layer 15 is preferably below 1.0vol%.The following institute of assay method of saturation hydroscopicity State.That is, using a diameter of 100mm circular bond layer 15 (film-like adhesive) as sample, sample is made in vacuum drier In 120 DEG C, dry 3 hours, after being let cool in desiccator, measure dry mass be set to M1.By sample in 85 DEG C, 85%RH perseverance Moisture absorption is taken out after 168 hours in constant temperature and humidity groove, and quick weighing is set to M2.Saturation hydroscopicity is calculated by following formula (2).
Saturation hydroscopicity (vol%)=[(M2-M1)/(M1/d)] × 100 (2)
Wherein, d is the density of film.
If saturation hydroscopicity is more than 1.0vol%, it is likely that because of moisture absorption when flowing back, the value of vapour pressure uprises, cannot be good Good reflux characteristic.
The residual volatile ingredient of bond layer 15 is preferably below 3.0wt%.The assay method for remaining volatile ingredient is as follows It is described.That is, sample, the quality at the initial stage of determination sample are used as using the bond layer 15 (film-like adhesive) of 50 × 50mm size Be set to M1, by sample 200 DEG C in hot air circulation thermostat, heating 2 hours after, weighing is set to M2.Residual volatile ingredient passes through Following formula (3) calculates.
Remain volatile ingredient (wt%)=[(M2-M1)/M1] × 100 (3)
If remain volatile ingredient more than 3.0wt%, it is likely that because encapsulation when heating and solvent volatilization, in bond layer 15 Inside produces space, produces encapsulation crackle.
Relative to the ratio of the linear expansion coefficient of bond layer 15, (line of metal level 14 expands the linear expansion coefficient of metal level 14 The linear expansion coefficient of coefficient/bond layer 15) it is preferably more than 0.2.If this is than less than 0.2, it is likely that becomes easily in gold It is peeling between category layer 14 and bond layer 15, encapsulation crackle, reliability decrease is produced in encapsulation.
(barrier film)
Barrier film is for making the treatability of bond layer 15 become good and protecting the film of bond layer 15., can as barrier film To use polyester (PET, PBT, PEN, PBN, PTT) system, polyolefin (PP, PE) system, copolymer (EVA, EEA, EBA) system, in addition These materials are subjected to aliquot replacement and further increase cementability or the film of mechanical strength.In addition it is also possible to it is these films Layered product.
The thickness of barrier film is not particularly limited, and can suitably set, but preferably 25~50 μm.
(semiconductor machining band 10)
Semiconductor machining described in present embodiment is illustrated with the manufacture method of band 10.First, bond layer 15 can be with Formed using preparing resin combination and being formed as the customary way of membranaceous layer.Specifically, it can include and for example exist Above-mentioned resin combination is coated with appropriate barrier film (peeling paper etc.) and drying is (in situation of heat cure etc. is needed, according to need Implement to heat and dry), method for forming bond layer 15 etc..Above-mentioned resin combination can be solution, can also It is dispersion liquid.Then, resulting bond layer 15 is bonded with the metal level 14 prepared in addition.As metal level 14, use Commercially available metal foil.Afterwards, the circle using chopper by bond layer 15 and the pre-cutting of metal level 14 into defined size Label shape, the nonuseable part on periphery is removed.
Then, cutting belt 13 is made.Base material film 11 can be film-made by known film-forming method.As the film Method, such as calendering film method, the tape casting in organic solvent, the expansion extrusion molding in closed system, T-shaped mould can be exemplified and squeezed Go out method, coetrusion, dry lamination method etc..Then, the coating adhesive composition on base material film 11, it is dry and (as needed Heat cross-linking) form adhesive phase 12.As coating method, roller coat dress, silk screen application, intaglio plate application etc. can be included.In addition, Adhesive composition can be coated directly onto on base material film 11, adhesive phase 12 is formed on base material film 11, in addition it is also possible to Adhesive composition is being coated on peeling paper that lift-off processing has been carried out to surface etc. and after forming adhesive phase 12, by this Adhesive phase 12 is transferred on base material film 11.Thus, it is produced on the cutting belt 13 formed with adhesive phase 12 on base material film 11.
Afterwards, by way of connecting according to metal level 14 with adhesive phase 12, cutting belt 13 is laminated to and is provided with circle On the metal level 14 of shape and the barrier film of bond layer 15, according to circumstances, also circle of the pre-cutting into defined size of cutting belt 13 Label shape etc., make semiconductor machining band 10.
<Application method>
Then, the method to being manufactured semiconductor device using the semiconductor machining of present embodiment with band 10, reference picture 2 are carried out Explanation.
The manufacture method of semiconductor device at least possesses following process：In dicing tape integrated semiconductor machining band 10 The upper process (installation procedure) for pasting semiconductor crystal wafer W；The semiconductor crystal wafer W processes cut and form semiconductor chip C (are cut Cut process)；The process that semiconductor chip C is peeled off with semiconductor machining together with band 10 from the adhesive phase 12 of cutting belt 13 (pickup process) and the process being connected to semiconductor chip C flip-chips on adherend 16 (flip-chip connects process).
[installation procedure]
First, will arbitrarily be arranged on dicing tape integrated semiconductor machining suitably to be peeled off with the barrier film on band 10, such as Fig. 2 (A) as shown in, semiconductor crystal wafer W is pasted on bond layer 15, its bonding is kept and is fixed (installation procedure). Now bond layer 15 is in its uncured state (including semi-cured state).In addition, dicing tape integrated semiconductor machining is used With 10 back sides for being glued to semiconductor crystal wafer W.The so-called semiconductor crystal wafer W back side refer to side opposite with circuit face face ( Referred to as non-electrical road surface, non-electrode forming face etc.).Method of attaching is not particularly limited, but preferably by the method for crimping.Crimping is logical Normal side presses unit by crimping roller etc. and carried out by flanging.
[cutting action "
Then, as shown in Fig. 2 (B), semiconductor crystal wafer W cutting is carried out.Thus, semiconductor crystal wafer W is cut off Into defined size and singualtion (panelization), manufacture semiconductor chip C.Cutting is for example from semiconductor crystal wafer W circuit surface side Conventionally carry out.In addition, in this process, it can use and for example carry out being cut into being claimed for semiconductor machining band 10 For cut-out mode for cutting entirely etc..As the cutter device used in this process, it is not particularly limited, can uses known Cutter device.Further, since semiconductor crystal wafer W is adhesively secured by semiconductor machining with band 10 with excellent adaptation, institute Dispersed so that chip defect or chip can be suppressed, and semiconductor crystal wafer W breakage can also be suppressed.In addition, cut In the case of extension with one-piece type semiconductor machining with band 10, the extension can be entered using known expanding unit OK.
[pickup process]
As shown in Fig. 2 (C), carry out semiconductor chip C pickup, make semiconductor chip C and bond layer 15 and Metal level 14 is peeled off from cutting belt 13 together.As the method for pickup, it is not particularly limited, can uses known various Method.It can include and for example eject each semiconductor chip C by pin with the side of base material film 11 of band 10 from semiconductor machining, will Method that the semiconductor chip C ejected is picked up by pick device etc..In addition, its back of the body of the semiconductor chip C picked up Protected by metal level 14 in face.
[flip-chip connection process]
The semiconductor chip C picked up passes through flip-chip juncture (flip-chip installation side as shown in Fig. 2 (D) Formula) it is fixed on the adherends such as substrate 16.Specifically, semiconductor chip C is made (to be also referred to as with semiconductor chip C circuit face For surface, circuit pattern forming face, electrode forming surface etc.) form relative with adherend 16, conventionally it is fixed in On adherend 16.For example, solder flux is set to be attached to the protuberance as connecting portion of the circuit surface side for being formed at semiconductor chip C first On 17.Then, the conduction of the engagement on the protuberance 17 for making semiconductor chip C and the welding backing for being sticked at adherend 16 is passed through Material 18 (solder etc.) contacts, while carrying out melting protuberance 17 and conductive material 18 by flanging, it is ensured that semiconductor chip C is with being glued Thing 16 is conducted, and semiconductor chip C can be made to be fixed on adherend 16 (flip-chip bonding process).Now, partly leading Space is formed between body chip C and adherend 16, distance is generally 30 μm~300 μm or so between the space.In addition, by semiconductor It is relative with adherend 16 will to remain in semiconductor chip C after on adherend 16 for chip C upside-down mountings chip bonding (flip-chip connection) Solder flux washing in face or gap removes, and makes packing matcrial in the gap (sealing resin etc.) and is sealed.
As adherend 16, the various substrates such as lead frame or circuit substrate (wired circuit board etc.) can be used.As The material of such substrate, is not particularly limited, and can include ceramic substrate, plastic base.As plastic base, can include Such as epoxy substrate, Bismaleimide Triazine substrate, polyimide substrate etc..In addition, by being made with other semiconductor chips For adherend 16, above-mentioned semiconductor chip C is subjected to flip-chip connection, chip on chip (chip on chip) can also be made Structure.
<Embodiment>
Then, for effect further clearly of the invention, embodiment and comparative example are described in detail, but the present invention is not It is defined in these embodiments.
(1) making of cutting belt
<Cutting belt (1)>
As the acrylic acid series copolymer with functional group, prepare comprising 2-EHA, acrylic acid 2- hydroxy methacrylates And the ratio of methacrylic acid and 2-EHA is the copolymer that 60 moles of %, matter average molecular weights are 700,000.Connect , by iodine number turn into 20 in the way of, add methacrylic acid 2- isocyanato ethyls, prepare glass transition temperature for- 50 DEG C, hydroxyl value 10mgKOH/g, acid number be 5mgKOH/g acrylic acid series copolymer (a-1).
By the zinc ionomer of the ethylene-methacrylic acid copolymer synthesized by radical polymerization, (methacrylic acid contains To measure as 13%, softening point be 72 DEG C, fusing point is 90 DEG C) resin bead melted at 140 DEG C, being configured to thickness using extruder is 100 μm of strip is membranaceous and makes base material film.
Make to the addition of 5 mass parts as PIC relative to the mass parts of acrylic acid series copolymer (a-1) 100 CORONATE L (trade name, TOSOH CORPORATION systems), it with the addition of Esacure of 3 mass parts as Photoepolymerizationinitiater initiater KIP 150 (trade name, Lamberti societies system) mixture is dissolved in ethyl acetate, is stirred and is prepared adhesive composition.
Prepared adhesive phase composition is coated on comprising through de- in the way of dried thickness turns into 10 μm In the release liner of the polyethylene terephthalate film of mould processing, after being dried 3 minutes at 110 DEG C, with above-mentioned base material film Fitting, is produced on the cutting belt (1) on base material film formed with adhesive phase.
(2) making of bond layer
(adhesive composite b-1)
Comprising as epoxy resin " 1002 " (trade name, Mitsubishi chemical Co., Ltd's system, solid bisphenol A types epoxy resin, Epoxide equivalent is 600) 20 mass parts, " 806 " (trade name, Mitsubishi chemical Co., Ltd's system, bisphenol-f type as epoxy resin Epoxy resin, epoxide equivalent 160, proportion 1.20) 55 mass parts, as curing agent " MEH7851-4H " it is (trade name, bright With chemical conversion Co. Ltd. system, biphenyl aralkyl-type phenol resin) 70 mass parts, " SO-C2 " (commodity as silica filler Name, ADMAFINE Co. Ltd. systems, average grain diameter are 0.5 μm) 200 mass parts and the " AEROSIL as silica filler R972 " (trade name, Nippon Aerosil Co., Ltd. system, the average grain diameter of primary particle size are 0.016 μm) 3 mass parts MEK is added in composition, is stirred and uniform composition is made.
As " YX6954 " of phenoxy resin, (trade name, Mitsubishi chemical Co., Ltd's system, matter average molecular weight are for addition thereto 38,000) 100 mass parts, as coupling agent " KBM-802 " (trade name, Shin-Etsu silicone Co., Ltd. system, Mercaptopropyi trimethoxy silane) 0.6 mass parts and as curing accelerator " CUREZOL 2PHZ-PW " (trade name, Four countries' chemical conversion Co. Ltd. system, 2- phenyl -4,5- bishydroxymethyls imidazoles, decomposition temperature are 230 DEG C) 0.5 mass parts, are stirred mixed Being bonded to becomes uniform.By further filtering it with the filter of 100 mesh, vacuum defoamation is carried out, obtains adhesive composite B-1 varnish.
(adhesive composite b-2)
Comprising as epoxy resin " 1002 " (trade name, Mitsubishi chemical Co., Ltd's system, solid bisphenol A types epoxy resin, Epoxide equivalent is 600) 40 mass parts, " 806 " (trade name, Mitsubishi chemical Co., Ltd's system, bisphenol-f type as epoxy resin Epoxy resin, epoxide equivalent 160, proportion 1.20) 100 mass parts, as curing agent " Dyhard100SF " (trade name, Degussa societies, dicyandiamide) 5 mass parts, as silica filler " SO-C2 " (trade name, ADMAFINE Co. Ltd. systems, Average grain diameter is 0.5 μm) 350 mass parts and " AEROSIL R972 " (trade name, Nippon as silica filler Aerosil Co., Ltd. trade name, the average grain diameter of primary particle size are 0.016 μm) first is added in the compositions of 3 mass parts Ethyl ketone, it is stirred and uniform composition is made.
" PKHH " (trade name, INCHEM societies system, matter average molecular weight 52,000, the glass of addition as phenoxy resin thereto Glass transition temperature be 92 DEG C) 100 mass parts, " KBM-802 " (trade name, Shin-Etsu silicone as coupling agent Co., Ltd. systems, mercaptopropyi trimethoxy silane) 0.6 mass parts and " the CUREZOL 2PHZ- as curing accelerator PW " (trade name, four countries' chemical conversion Co. Ltd. system, 2- phenyl -4,5- bishydroxymethyls imidazoles, decomposition temperature are 230 DEG C) 0.5 matter Part is measured, is stirred to becoming uniform.By further filtering it with the filter of 100 mesh, vacuum defoamation is carried out, is glued Connect agent composition b-2 varnish.
<Bond layer (1)>
Adhesive composite b-1 is coated on comprising poly- pair through demoulding processing in the way of dried thickness turns into 5 μm On the barrier film of PET film, dry 5 minutes, be produced on barrier film viscous formed with bond layer at 110 DEG C Connect film.
<Bond layer (2)>
In addition to replacing adhesive composite b-1 using adhesive composite b-2, by same with bond layer (1) Method obtains bond layer (2).
<Bond layer (3)>
In the way of turning into 20 μm by dried thickness in addition to application, obtained by the method same with bond layer (1) To bond layer (3).
(3) metal level
As metal level, prepare following layer.
<Metal level (1)>
(trade name, Mitsu Mining ＆ Smelting Co., Ltd's system, thickness are 12 μm to TQ-M4-VSP, surface roughness RzJIS is 0.6um)
<Metal level (2)>
(trade name, The Furakawa Electric Co., Ltd.'s system, copper foil, thickness are 12 μm to F0-WS, surface roughness RzJIS is 1.3um)
<Metal level (3)>
(trade name, The Furakawa Electric Co., Ltd.'s system, copper foil, thickness are 12 μm to F3-WS, surface roughness RzJIS is 2.8um)
<Metal level (4)>
(trade name, The Furakawa Electric Co., Ltd.'s system, copper foil, thickness are 18 μm, surface roughness RzJIS to DT-GLD-STD For 9.0um)
<Metal level (5)>
(trade name, JX Nippon Mining ＆ Metals Co., Ltd.'s system, thickness are 18 μm to GHY5-HA, surface roughness RzJIS is 0.3 μ m)
<Metal level (6)>
(trade name, The Furakawa Electric Co., Ltd.'s system, copper foil, thickness are 35 μm to GTS-MP, surface roughness RzJIS is 11.0μm)
(4) making of semiconductor machining band
<Embodiment 1>
Bond layer (1) obtained from operating as described above and metal level (1) are to be bonded angle be 120 °, pressure is 0.2MPa, speed make one side adhesive film to be bonded under conditions of 10mm/s.Cutting belt (1) pre-cut is broken into and can fitted in Shape on ring frame, one side adhesive film pre-cut is broken into shape as can wafer be covered, by the viscous of above-mentioned cutting belt (1) Mixture layer is bonded with the metal level side of above-mentioned one side adhesive film in the way of adhesive phase is exposed to around one side adhesive film, Make the semiconductor machining band of embodiment 1.
<Embodiment 2~5, comparative example 1~2>
In addition to the combination that the combination of cutting belt, adhesive composite, metal level is set as described in table 1, by with reality The same method of example 1 is applied, makes embodiment 2~5, the semiconductor machining band of comparative example 1~2.
Following evaluation is carried out with band to the semiconductor machining described in embodiment 1~5 and comparative example 1~2.Its result is shown In table 1.
(cutting)
The viscous of the semiconductor machining band described in each embodiment and each comparative example is attached at the back side for the Silicon Wafer that thickness is 200 μm Oxidant layer is connect, is cut, is divided into 7.5mm × 7.5mm evaluation chip.For the semiconductor machining of the microarray strip after cutting With band, the evaluation of the observation band bond layer evaluation core from the disengaging of metal level or with bond layer and metal level with chip Piece is from the presence or absence of disengaging of adhesive phase.No semiconductor machining for producing any disengaging is evaluated as by the use of band as good merchantable brand Zero, using even generated at one the semiconductor machining of disengaging by the use of band as substandard products and be evaluated as ×.
The Silicon Wafer that thickness is 650 μm is used into conventional cutting small pieces junction film (the Hitachi's chemical conversion industry strain of in general The FH-900-20 of formula commercial firm) cut into 7.5mm × 7.5mm and be used as evaluation element.The evaluation is engaged with element die In conduct evaluation substrate on the lead frame through silver-plated process.By what is obtained by the method described in the evaluation of above-mentioned cutting Evaluation described in each embodiment and each comparative example with chip temperature be 160 DEG C, pressure 0.1MPa, the condition that the time is 1 second Under be installed on the evaluation element of evaluation substrate, make 20 each embodiments and the chip on chip knot described in each comparative example The reliability sample of structure.
After each reliability sample is handled 168 hours in 85 DEG C/85%RH constant temperature and humidity layer, according to sample surfaces IR (infrared ray) reflow ovens for being set for 260 DEG C and as the mode of 20 seconds of maximum temperature in by sample, room temperature will be passed through The processing placed and cooled down is repeated 3 times.In each embodiment and each comparative example, for having carried out processing as described above 20 samples, the stripping of bond layer and metal level is observed, is set as zero using the sample not being peeling as good merchantable brand, will Even 1 sample, which generates the sample of stripping as substandard products, to be set as ×.In addition, to the presence or absence of each sample observation stripping When, use ultrasonic investigation device (Scanning Acoustic Tomograph：SAT) and by bounce technique observe.
[table 1]
Embodiment 1 Embodiment 2 Embodiment 3 Embodiment 4 Embodiment 5 Comparative example 1 Comparative example 2
Cutting belt (1) (1) (1) (1) (1) (1) (1)
Bond layer (1) (1) (1) (3) (2) (1) (3)
Metal level (1) (2) (3) (4) (3) (5) (6)
Cutting ○ ○ ○ ○ ○ × ○
Reliability ○ ○ ○ ○ ○ × ×
As shown in table 1, the semiconductor machining band described in embodiment 1~5 is due to the rough surface of metal level It is more than 0.6 μm and less than 9.0 μm to spend RzJIS, for 0.5 μm specified in claim less than 10.0 μm, so into For the good result of cutting, reliability.
On the other hand, the semiconductor machining described in comparative example 1 with band because the surface roughness RzJIS of metal level is less than 0.5 μm, so as cutting, the result of reliability inequality.In addition, the semiconductor machining band described in comparative example 2 is due to gold The surface roughness RzJIS for belonging to layer is more than 10.0 μm, so the result as poor reliability.
Symbol description
10：Semiconductor machining band
11：Base material film
12：Adhesive phase
13：Cutting belt
14：Metal level
15：Bond layer

Claims (4)

1. a kind of semiconductor machining band, it is characterised in that it has：
Cutting belt containing base material film and adhesive phase,
The metal level that is arranged on described adhesive layer and
It is arranged on the metal level and is used for the bond layer at the back side of the metal bonding layer to semiconductor chip,
The surface roughness RzJIS based on 10 mean roughness of the metal level is 0.5 μm less than 10.0 μm.
2. semiconductor machining band according to claim 1, it is characterised in that
The metal level is copper foil.
3. semiconductor machining band according to claim 1 or 2, it is characterised in that
The bond layer contain (A) epoxy resin, (B) curing agent, (C) phenoxy resin and (D) it is surface treated inorganic Packing material, the content of (D) relative to (A)~(D) add up to more than 40 weight % and below 65 weight %.
4. according to semiconductor machining band according to any one of claims 1 to 3, it is characterised in that
Described adhesive layer contains by CH2The monomer and intramolecular of acrylate, hydroxyl represented by=CHCOOR have freely The acrylic acid series polymeric compounds that the isocyanate compound of base reactivity carbon-to-carbon double bond is formed, in formula, R is that carbon number is 4~8 Alkyl.
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