TW201842117A - Dicing die-adhering film capable of obtaining a semiconductor wafer with a glue layer and is bonded to a substrate through a die-adhering film - Google Patents

Dicing die-adhering film capable of obtaining a semiconductor wafer with a glue layer and is bonded to a substrate through a die-adhering film Download PDF

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Publication number
TW201842117A
TW201842117A TW107112984A TW107112984A TW201842117A TW 201842117 A TW201842117 A TW 201842117A TW 107112984 A TW107112984 A TW 107112984A TW 107112984 A TW107112984 A TW 107112984A TW 201842117 A TW201842117 A TW 201842117A
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TW
Taiwan
Prior art keywords
adhesive layer
adhesive
film
acrylic polymer
semiconductor wafer
Prior art date
Application number
TW107112984A
Other languages
Chinese (zh)
Inventor
木村雄大
高本尚英
大西謙司
宍戶雄一郎
福井章洋
大和道子
井上真一
Original Assignee
日商日東電工股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商日東電工股份有限公司 filed Critical 日商日東電工股份有限公司
Publication of TW201842117A publication Critical patent/TW201842117A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Landscapes

  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)

Abstract

The present invention provides a dicing die-adhering film (DDAF), wherein a glue layer on a dicing tape can be well cut by using the DDAF in an expansion step to obtain a semiconductor wafer with the glue layer, and the DDAF is suitable for achieving good pick-up of the semiconductor wafer with a well-cut glue layer. The DDAF of the present invention is provided with a dicing tape 10 and a glue layer 20. The dicing tape 10 is provided with an adhesive layer 12 containing a first acrylic polymer containing lauryl (meth)acrylate and 2-hydroxyethyl (meth)acrylate as constituent monomers. The glue layer 20 is in close contact with the adhesive layer 12 and contains a second acrylic polymer having a nitrile group. In the infrared absorption spectrum of the second acrylic polymer, the ratio of the peak height near 2240 cm<SP>-1</SP> derived from the nitrile group to the peak height near the 1730 cm<SP>-1</SP> derived from the carbonyl group is 0.01 to 0.1.

Description

切晶黏晶膜Cut crystal

本發明係關於一種於半導體裝置之製造過程中可使用之切晶黏晶膜。The present invention relates to a dicing die-bonding film which can be used in the manufacturing process of a semiconductor device.

於半導體裝置之製造過程中，為了獲得附帶與晶片尺寸相當之黏晶用接著膜的半導體晶片、即附有黏晶用接著劑層之半導體晶片，有時會使用切晶黏晶膜。切晶黏晶膜具有與作為加工對象之半導體晶圓對應之尺寸，例如具有：包含基材及黏著劑層之切晶帶、以及可剝離地密接於該黏著劑層側之黏晶膜(接著劑層)。 作為使用切晶黏晶膜獲得附接著劑層之半導體晶片之方法之一，已知經由擴張切晶黏晶膜中之切晶帶以割斷黏晶膜之步驟的方法。該方法首先於切晶黏晶膜之黏晶膜上貼合半導體晶圓。該半導體晶圓例如以其後能夠隨黏晶膜一起被割斷而單片化成複數個半導體晶片之方式進行有加工。繼而，使用擴張裝置於包含半導體晶圓之徑方向及周方向之二維方向上拉伸切晶黏晶膜之切晶帶，以割斷該黏晶膜從而由切晶帶上之黏晶膜產生分別與半導體晶片密接之複數個接著膜小片。於該擴張步驟中，黏晶膜上之半導體晶圓於相當於黏晶膜中之割斷部位的部位亦發生割斷，而將切晶黏晶膜或切晶帶上之半導體晶圓單片化成複數個半導體晶片。繼而，為了擴寬切晶帶上之割斷後之複數個附接著劑層之半導體晶片之間隔距離，再次進行擴張步驟。繼而，例如經過洗淨步驟後，利用拾取機構之銷構件自切晶帶之下側將各半導體晶片連同其所密接之與晶片尺寸相當之黏晶膜一起頂起後，自切晶帶上進行拾取。如此獲得附帶黏晶膜即接著劑層之半導體晶片。該附接著劑層之半導體晶片經由其接著劑層，藉由黏晶而固著於安裝基板等被黏著體。例如下述專利文獻1～3中記載有如以上般使用之切晶黏晶膜之相關技術。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2007-2173號公報 [專利文獻2]日本專利特開2010-177401號公報 [專利文獻3]日本專利特開2016-115804號公報In the manufacturing process of a semiconductor device, in order to obtain a semiconductor wafer with an adhesive film for die attach that is equivalent to the size of the wafer, that is, a semiconductor wafer with an adhesive layer for die attach, a die cut adhesive film is sometimes used. The cut crystal adhesive film has a size corresponding to a semiconductor wafer as a processing object, for example, a cut crystal tape including a substrate and an adhesive layer, and an adhesive film peelably adhered to the adhesive layer side (then Agent layer). As one of the methods for obtaining a semiconductor wafer with an adhesive layer using a die-cutting die-bonding film, a method of expanding the die-cutting band in the die-cutting die-bonding film to cut the die-bonding film is known. This method first attaches a semiconductor wafer to a die-bond film of a die-cut die-bond film. This semiconductor wafer is processed, for example, so that it can be singulated together with the die-bond film and singulated into a plurality of semiconductor wafers. Then, the expansion device is used to stretch the dicing tape of the dicing die-bonding film in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer, so as to cut off the dicing die film so as to be generated from the dicing die film on the dicing tape. A plurality of adhesive film pieces are in close contact with the semiconductor wafer, respectively. In this expansion step, the semiconductor wafer on the die-bonding film is also cut at a position corresponding to the cut-off portion in the die-bonding film, and the semiconductor wafer on the die-bonding die-bonding film or the die-cutting band is singulated into a plurality. Semiconductor wafers. Then, in order to widen the separation distance of the plurality of semiconductor wafers with the adhesive layer after the cutting on the dicing tape, the expansion step is performed again. Then, for example, after the washing step, the pin member of the pick-up mechanism is used to lift each semiconductor wafer together with the sticky crystal film of the same size as the wafer from the lower side of the dicing tape, and then perform the self-cutting on the dicing tape. Pick it up. In this way, a semiconductor wafer with a sticky crystal film or an adhesive layer was obtained. The semiconductor wafer with the adhesive layer is fixed to an adherend such as a mounting substrate via a bonding layer through the adhesive layer. For example, the following patent documents 1 to 3 describe the related art of the die-cut adhesive film used as described above. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2007-2173 [Patent Literature 2] Japanese Patent Laid-Open No. 2010-177401 [Patent Literature 3] Japanese Patent Laid-Open No. 2016-115804 Bulletin

[發明所欲解決之問題] 圖14係以其剖面模式圖表示之先前型切晶黏晶膜Y。切晶黏晶膜Y包含切晶帶60及黏晶膜70。切晶帶60具有基材61與發揮黏著力之黏著劑層62之積層構造。黏晶膜70憑藉黏著劑層62之黏著力而密接於黏著劑層62。此種切晶黏晶膜Y具有與半導體裝置之製造過程中作為加工對象或工件之半導體晶圓對應尺寸的圓盤形狀，可用於上述擴張步驟。例如，如圖15所示，半導體晶圓81貼合於黏晶膜70，且環狀框82貼附於黏著劑層62，於此狀態下實施上述擴張步驟。半導體晶圓81例如以能夠單片化成複數個半導體晶片之方式進行有加工。環狀框82係於貼附於切晶黏晶膜Y之狀態下，擴張裝置所具備之搬送臂等搬送機構於工件搬送時所機械抵接之框構件。先前型切晶黏晶膜Y係以此種環狀框82可憑藉切晶帶60之黏著劑層62之黏著力而固定於該膜的方式設計。即，先前型切晶黏晶膜Y具有確保於切晶帶60之黏著劑層62中在黏晶膜70之周圍存在環狀框貼附用區域的設計。於此種設計中，黏著劑層62之外周端62e與黏晶膜70之外周端70e於膜面內方向上之距離為10～30 mm左右。 本發明係鑒於上述情況考慮而成者，其目的在於提供一種於為了獲得附接著劑層之半導體晶片而使用切晶黏晶膜之擴張步驟中切晶帶上之接著劑層可被良好地割斷，且適於實現割斷後之附接著劑層之半導體晶片之良好拾取的切晶黏晶膜。 [解決問題之技術手段] 本發明所提供之切晶黏晶膜具備切晶帶及接著劑層。切晶帶具有包含基材與黏著劑層之積層構造。接著劑層可剝離地密接於切晶帶中之黏著劑層。切晶帶之黏著劑層含有至少包含源自(甲基)丙烯酸月桂酯之單元與源自(甲基)丙烯酸2-羥基乙酯之單元的第1丙烯酸系聚合物。第1丙烯酸系聚合物係至少包含(甲基)丙烯酸月桂酯與(甲基)丙烯酸2-羥基乙酯作為構成單體之丙烯酸系共聚物。於本發明中，「(甲基)丙烯酸酯」意指「丙烯酸酯」及/或「甲基丙烯酸酯」。另一方面，切晶帶之黏著劑層上之接著劑層含有具有腈基之第2丙烯酸系聚合物。於該第2丙烯酸系聚合物之紅外線吸收光譜中，源自腈基之2240 cm-1 附近之波峰(屬於C≡N伸縮振動之吸收峰)之高度相對於源自羰基之1730 cm-1 附近之波峰(屬於C=O伸縮振動之吸收峰)之高度的比值為0.01以上，較佳為0.015以上，更佳為0.02以上，且為0.1以下，較佳為0.09以下，更佳為0.08以下。即，第2丙烯酸系聚合物之腈基相對含量係設為使上述比值處於此種範圍內之程度。此種構成之切晶黏晶膜可用於在半導體裝置之製造過程中獲得附接著劑層之半導體晶片。又，本切晶黏晶膜例如可藉由如下方法(積層塗佈方法)製造，該方法會經過於形成於特定分隔件上之接著劑層上塗佈黏著劑層形成用組合物並使之乾燥而形成黏著劑層之過程、或者於形成於特定基材上之黏著劑層上塗佈接著劑層形成用組合物並使之乾燥而形成接著劑層之過程。 於半導體裝置之製造過程中，如上所述，存在為了獲得附接著劑層之半導體晶片而實施使用切晶黏晶膜進行之擴張步驟、即用以割斷之擴張步驟的情況。於該擴張步驟中，需適當地使割斷力作用於切晶黏晶膜中之切晶帶上之接著劑層。如上所述，本切晶黏晶膜中之切晶帶之黏著劑層含有至少包含源自(甲基)丙烯酸月桂酯之單元與源自(甲基)丙烯酸2-羥基乙酯之單元的第1丙烯酸系聚合物。黏著劑層中之丙烯酸系聚合物包含源自(甲基)丙烯酸月桂酯之單元之構成及包含源自(甲基)丙烯酸2-羥基乙酯之單元之構成均適於實現切晶帶之黏著劑層與其上之接著劑層之間之較高之剪切接著力，因此，適於在擴張步驟中適當地使割斷力作用於在面內方向上受到擴張之切晶帶上之接著劑層以將其割斷。並且，如上所述，本切晶黏晶膜中之接著劑層含有具有腈基之第2丙烯酸系聚合物。此種構成適於謀求接著劑層之高彈性模數化，因此，有利於實現接著劑層於割斷用擴張步驟中之良好割斷。 進而，於本切晶黏晶膜中，黏著劑層中之第1丙烯酸系聚合物包含源自(甲基)丙烯酸月桂酯之單元且接著劑層中之第2丙烯酸系聚合物具有腈基的構成有利於確保兩層間具有如上所述較高之剪切接著力，且有利於抑制在兩層間之積層方向上作用之結合性之相互作用。於藉由上述積層塗佈方法積層形成黏著劑層與接著劑層之情形時，例如於該兩層間之積層方向上作用之結合性之相互作用容易變得過剩，但黏著劑層之丙烯酸系聚合物包含源自(甲基)丙烯酸月桂酯之單元且接著劑層之丙烯酸系聚合物具有腈基的構成適於確保兩層間之較高之剪切接著力並抑制於該兩層間之積層方向上作用之結合性之相互作用。進而，以使關於第2丙烯酸系聚合物之紅外線吸收光譜中之吸收波峰的上述比值成為0.01以上、較佳為0.015以上、更佳為0.02以上之方式設定第2丙烯酸系聚合物之腈基相對含量之上述構成適於在拾取步驟中容易地自黏著劑層剝離或拾取附接著劑層之半導體晶片。並且，以使關於第2丙烯酸系聚合物之紅外線吸收光譜中之吸收波峰的上述比值成為0.1以下、較佳為0.09以下、更佳為0.08以下之方式設定第2丙烯酸系聚合物之腈基相對含量之上述構成適於抑制擴張步驟中發生經割斷之附接著劑層之半導體晶片自黏著劑層局部地剝離即隆起之情況。 如上所述，本發明之切晶黏晶膜適於實現切晶帶上之接著劑層於擴張步驟中之良好割斷，且適於實現附接著劑層之半導體晶片於拾取步驟中之良好拾取。 此種本切晶黏晶膜可於膜面內方向上以實質相同之尺寸設計切晶帶或其黏著劑層與其上之接著劑層，而使該接著劑層不僅包含工件貼附用區域且包含框貼附用區域。例如可採用如下設計：於切晶黏晶膜之面內方向上，接著劑層之外周端與切晶帶之基材或黏著劑層之各外周端相距1000 μm以內。此種本切晶黏晶膜適於在藉由例如上述積層塗佈方法積層形成接著劑層與黏著劑層後，藉由一衝壓加工等加工而一次地實施用以形成具有基材與黏著劑層之積層構造之一切晶帶之加工、及用以形成一接著劑層之加工。 於上述先前型切晶黏晶膜Y之製造過程中，用以形成特定尺寸及形狀之切晶帶60之加工步驟(第1加工步驟)與用以形成特定尺寸及形狀之黏晶膜70之加工步驟(第2加工步驟)需分成獨立步驟。於第1加工步驟中，例如對於具有特定之分隔件、待形成為基材61之基材層、及位於該等之間之待形成為黏著劑層62之黏著劑層之積層構造的積層片體，實施將加工刀自基材層側起插入至分隔件為止之加工。藉此，於分隔件上形成具有分隔件上之黏著劑層62與基材61之積層構造之切晶帶60。於第2加工步驟中，例如對於具有特定之分隔件與待形成為黏晶膜70之接著劑層之積層構造之積層片體，實施將加工刀自接著劑層側起插入至分隔件為止之加工。藉此，於分隔件上形成黏晶膜70。其後將如此藉由單獨步驟所形成之切晶帶60與黏晶膜70進行位置對準並貼合。圖16表示附帶被覆黏晶膜70表面及黏著劑層62表面之分隔件83之先前型切晶黏晶膜Y。 相對於此，切晶帶或其黏著劑層與其上之接著劑層於膜面內方向上具有實質相同設計尺寸之情形時之本發明之切晶黏晶膜適於在藉由例如上述積層塗佈方法積層形成接著劑層與黏著劑層後，藉由一衝壓加工等加工而一次地實施用以形成具有基材與黏著劑層之積層構造之一切晶帶之加工、及用以形成一接著劑層之加工。此種本切晶黏晶膜適於實現接著劑層於擴張步驟中之良好割斷且適於實現附接著劑層之半導體晶片於拾取步驟中之良好拾取，並且就減少製造步驟數之觀點或控制製造成本之觀點等而言適於高效率地進行製造。 本切晶黏晶膜中之接著劑層中之第2丙烯酸系聚合物之環氧值較佳為0.05 eq/kg以上，更佳為0.1 eq/kg以上，更佳為0.2 eq/kg以上。此種構成適於確保切晶帶之黏著劑層與其上之接著劑層之間之接著力或密接性，而適於抑制擴張步驟中發生附接著劑層之半導體晶片自黏著劑層局部地剝離即隆起之情況。又，該第2丙烯酸系聚合物之環氧值較佳為1 eq/kg以下，更佳為0.9 eq/kg以下。此種構成適於抑制在切晶帶之黏著劑層與接著劑層之間之積層方向上作用之結合性之相互作用，因此，有利於實現拾取步驟中之良好拾取。此種環氧值之第2丙烯酸系聚合物於接著劑層中之含有比率較佳為5～95質量%，更佳為40～80質量%。 本切晶黏晶膜中之接著劑層中之第2丙烯酸系聚合物之羧酸值較佳為1 mgKOH/g以上，更佳為3 mgKOH/g以上，更佳為5 mgKOH/g以上。此種構成適於確保切晶帶之黏著劑層與其上之接著劑層之間之接著力或密接性，而適於抑制擴張步驟中發生附接著劑層之半導體晶片自黏著劑層局部地剝離即隆起之情況。又，該第2丙烯酸系聚合物之羧酸值較佳為20 mgKOH/g以下，更佳為18 mgKOH/g以下。此種構成適於抑制在切晶帶之黏著劑層與接著劑層之間之積層方向上作用之結合性之相互作用，因此，有利於實現拾取步驟中之良好拾取。此種羧酸值之第2丙烯酸系聚合物於接著劑層中之含有比率較佳為5～95質量%，更佳為40～80質量%。 於本切晶黏晶膜中之黏著劑層中之第1丙烯酸系聚合物中，源自(甲基)丙烯酸月桂酯之單元相對於源自(甲基)丙烯酸2-羥基乙酯之單元的莫耳比率較佳為1以上，更佳為3以上，更佳為5以上。此種構成適於確保切晶帶之黏著劑層與其上之接著劑層之間具有如上所述較高之剪切接著力，且適於抑制在兩層間之積層方向上作用之結合性之相互作用，因此，有利於實現拾取步驟中之良好拾取。又，該莫耳比率較佳為40以下，更佳為35以下，更佳為30以下。此種構成適於確保切晶帶之黏著劑層與接著劑層之間之接著力或密接性，而適於抑制擴張步驟中發生附接著劑層之半導體晶片自黏著劑層局部地剝離即隆起之情況。 於本切晶黏晶膜中，切晶帶之黏著劑層較佳為放射線硬化型黏著劑層，於溫度23℃及剝離速度300 mm/min之條件下之T型剝離試驗中，放射線硬化後之黏著劑層與接著劑層之間之剝離力較佳為0.04 N/20 mm以上，更佳為0.05 N/20 mm以上，更佳為0.08 N/20 mm以上。此種構成適於確保切晶帶之黏著劑層與其上之接著劑層之間之接著力或密接性，而適於抑制擴張步驟中發生附接著劑層之半導體晶片自黏著劑層局部地剝離即隆起之情況。於溫度23℃及剝離速度300 mm/min之條件下之T型剝離試驗中，放射線硬化後之黏著劑層與接著劑層之間之剝離力較佳為0.3 N/20 mm以下，更佳為0.25 N/20 mm以下，更佳為0.22 N/20 mm以下。此種構成適於實現拾取步驟中之良好拾取。 本切晶黏晶膜中之黏著劑層中之第1丙烯酸系聚合物較佳為作為放射線聚合性成分之含不飽和官能基之異氰酸酯化合物之加成物。於該情形時，第1丙烯酸系聚合物中之含不飽和官能基之異氰酸酯化合物相對於源自(甲基)丙烯酸2-羥基乙酯之單元的莫耳比率較佳為0.1以上，更佳為0.2以上，更佳為0.3以上。該等構成適於藉由第1丙烯酸系聚合物與含不飽和官能基之異氰酸酯化合物之反應而將黏著劑層適度地高彈性模數化，有利於在擴張步驟中良好地割斷接著劑層。又，就減少硬化後黏著劑層中之低分子量成分之觀點而言，於用以形成加成有含不飽和官能基之異氰酸酯化合物之第1丙烯酸系聚合物的包含第1丙烯酸系聚合物與含不飽和官能基之異氰酸酯化合物之反應組合物中，第1丙烯酸系聚合物中之含不飽和官能基之異氰酸酯化合物相對於源自(甲基)丙烯酸2-羥基乙酯之單元的莫耳比率較佳為2以下，更佳為1.5以下，更佳為1.3以下。[Problems to be Solved by the Invention] FIG. 14 is a conventional cut-to-size die-bond film Y shown in a sectional schematic view. The cut crystal sticky film Y includes a cut crystal band 60 and a sticky film 70. The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 exhibiting adhesive force. The adhesive film 70 is in close contact with the adhesive layer 62 by virtue of the adhesive force of the adhesive layer 62. Such a die-cut die-bonding film Y has a disc shape corresponding to the size of a semiconductor wafer as a processing object or a workpiece in the manufacturing process of a semiconductor device, and can be used in the expansion step described above. For example, as shown in FIG. 15, the semiconductor wafer 81 is attached to the adhesive film 70, and the ring frame 82 is attached to the adhesive layer 62, and the above-mentioned expansion step is performed in this state. The semiconductor wafer 81 is processed, for example, so that it can be singulated into a plurality of semiconductor wafers. The ring frame 82 is a frame member that is mechanically abutted by a transfer mechanism such as a transfer arm provided in the expansion device in a state of being attached to the cut crystal die attach film Y. The conventional cut crystal die attach film Y is designed in such a manner that the ring frame 82 can be fixed to the film by the adhesive force of the adhesive layer 62 of the cut crystal tape 60. That is, the conventional type die-cut die-bond film Y has a design in which a ring frame attachment area is provided around the die-bond film 70 in the adhesive layer 62 of the die-cut strip 60. In this design, the distance between the outer peripheral end 62e of the adhesive layer 62 and the outer peripheral end 70e of the adhesive film 70 in the film plane direction is about 10 to 30 mm. The present invention was conceived in view of the above-mentioned circumstances, and an object thereof is to provide an adhesive layer on a dicing tape that can be well cut in an expansion step using a dicing die-bond film in order to obtain a semiconductor wafer with an adhesive layer. And, it is suitable for achieving good pick-up of a die-cut die-bond film of a semiconductor wafer with an adhesive layer after cutting. [Technical means to solve the problem] The crystal-cut adhesive film provided by the present invention includes a crystal-cut band and an adhesive layer. The dicing tape has a laminated structure including a substrate and an adhesive layer. The adhesive layer is peelably adhered to the adhesive layer in the dicing tape. The adhesive layer of the dicing tape contains a first acrylic polymer including at least a unit derived from lauryl (meth) acrylate and a unit derived from 2-hydroxyethyl (meth) acrylate. The first acrylic polymer is an acrylic copolymer containing at least lauryl (meth) acrylate and 2-hydroxyethyl (meth) acrylate as constituent monomers. In the present invention, "(meth) acrylate" means "acrylate" and / or "methacrylate". On the other hand, the adhesive layer on the adhesive layer of the dicing tape contains a second acrylic polymer having a nitrile group. In the infrared absorption spectrum of the second acrylic polymer, the height of a peak (belonging to the absorption peak of C≡N stretching vibration) near 2240 cm -1 from a nitrile group is higher than that near 1730 cm -1 from a carbonyl group. The ratio of the height of the wave peak (the absorption peak belonging to the C = O stretching vibration) is 0.01 or more, preferably 0.015 or more, more preferably 0.02 or more, and 0.1 or less, preferably 0.09 or less, and more preferably 0.08 or less. That is, the relative content of the nitrile group of the second acrylic polymer is set to such an extent that the above ratio falls within such a range. The crystal die-bonding film having such a structure can be used to obtain a semiconductor wafer with an adhesive layer during the manufacturing process of a semiconductor device. In addition, the present cut crystal adhesive film can be produced, for example, by a method (layer coating method) which is performed by applying a composition for forming an adhesive layer on an adhesive layer formed on a specific separator, and A process of forming an adhesive layer by drying, or a process of applying a composition for forming an adhesive layer on an adhesive layer formed on a specific substrate and drying the composition to form an adhesive layer. In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor wafer with an adhesive layer, an expansion step using a dicing die-bond film, that is, an expansion step for cutting off, may be performed. In this expansion step, it is necessary to appropriately make the cutting force act on the adhesive layer on the dicing tape in the dicing film. As described above, the adhesive layer of the crystalline band in the crystalline crystal film of the present crystalline layer contains a first group containing at least a unit derived from lauryl (meth) acrylate and a unit derived from 2-hydroxyethyl (meth) acrylate. 1 acrylic polymer. The composition of the acrylic polymer in the adhesive layer containing a unit derived from lauryl (meth) acrylate and the structure containing a unit derived from 2-hydroxyethyl (meth) acrylate are suitable for achieving the adhesion of the crystalline band. The high shear adhesive force between the adhesive layer and the adhesive layer thereon is suitable for appropriately applying a cutting force to the adhesive layer on the crystalline band that is expanded in the plane direction in the expansion step. To cut it off. In addition, as described above, the adhesive layer in the crystalline cut-to-stick film contains the second acrylic polymer having a nitrile group. Such a structure is suitable for achieving a high elastic modulus of the adhesive layer, and therefore, it is advantageous to achieve good cutting of the adhesive layer in the expansion step for cutting. Furthermore, in the cut crystal adhesive film, the first acrylic polymer in the adhesive layer includes a unit derived from lauryl (meth) acrylate, and the second acrylic polymer in the adhesive layer has a nitrile group. The structure is advantageous for ensuring the high shear adhesion between the two layers as described above, and for suppressing binding interactions acting in the direction of the lamination between the two layers. In the case where the adhesive layer and the adhesive layer are formed by lamination by the above-mentioned lamination coating method, for example, the interaction of the binding properties acting in the lamination direction between the two layers tends to become excessive, but the acrylic polymer of the adhesive layer is polymerized. The acrylic polymer having a unit derived from lauryl (meth) acrylate and an adhesive layer having a nitrile group is suitable for ensuring a high shear adhesive force between two layers and suppressing the direction of lamination between the two layers. Binding interaction Furthermore, the nitrile group relative of the second acrylic polymer is set so that the above ratio of the absorption peaks in the infrared absorption spectrum of the second acrylic polymer is 0.01 or more, preferably 0.015 or more, and more preferably 0.02 or more. The above-mentioned composition of the content is suitable for easily peeling or picking up a semiconductor wafer with an adhesive layer from the adhesive layer in the pickup step. In addition, the relative ratio of the nitrile group of the second acrylic polymer is set so that the ratio of the absorption peak in the infrared absorption spectrum of the second acrylic polymer is 0.1 or less, preferably 0.09 or less, and more preferably 0.08 or less. The above-mentioned composition of the content is suitable for suppressing the case where the semiconductor wafer that has been cut off from the adhesive layer in the expansion step is partially peeled off from the adhesive layer, that is, raised. As described above, the dicing die-bonding film of the present invention is suitable for achieving good severance of the adhesive layer on the dicing tape in the expansion step, and is suitable for achieving good pickup of the semiconductor wafer with the adhesive layer in the pickup step. Such a cut crystal bond film can be designed with substantially the same size in the direction of the film surface as the cut band or its adhesive layer and the adhesive layer thereon, so that the adhesive layer not only includes the area for attaching the workpiece, but also Contains frame attachment area. For example, the following design can be adopted: in the in-plane direction of the cut crystal adhesive film, the outer peripheral end of the adhesive layer and the outer peripheral end of the base material of the cut crystal band or the adhesive layer are separated within 1000 μm. Such a cut-to-crystal adhesive film is suitable for forming the adhesive layer and the adhesive layer at one time by processing such as a stamping process after laminating the adhesive layer and the adhesive layer by, for example, the above-mentioned lamination coating method. The processing of all the crystal strips of the laminated structure and the processing for forming an adhesive layer. In the above-mentioned manufacturing process of the above-mentioned chip-cutting crystal film Y, the processing steps (first processing step) for forming the chip-shaped strip 60 of a specific size and shape and the chip-forming film 70 of a specific size and shape The processing step (second processing step) needs to be divided into separate steps. In the first processing step, for example, a laminated sheet having a laminated structure of a specific separator, a substrate layer to be formed as the substrate 61, and an adhesive layer to be formed as the adhesive layer 62 located between them. The body is processed to insert the processing blade from the base material layer side to the separator. As a result, a dicing tape 60 having a laminated structure of the adhesive layer 62 and the substrate 61 on the separator is formed on the separator. In the second processing step, for example, for a laminated sheet having a laminated structure of a specific separator and an adhesive layer to be formed as the adhesive film 70, a process of inserting a processing knife from the adhesive layer side to the separator is performed. . As a result, a die attach film 70 is formed on the separator. Thereafter, the dicing tape 60 and the die-bonding film 70 formed in such a separate step are aligned and bonded. FIG. 16 shows a conventional die-cut die-bond film Y with a spacer 83 covering the surface of the die-bond film 70 and the surface of the adhesive layer 62. In contrast, when the dicing tape or its adhesive layer and the adhesive layer thereon have substantially the same design dimensions in the direction of the film surface, the dicing die-casting film of the present invention is suitable for coating by, for example, the above-mentioned multilayer coating. The cloth method is laminated to form an adhesive layer and an adhesive layer, and then a processing such as a stamping process is performed to form all the crystal bands having a laminated structure with a substrate and an adhesive layer, and to form an adhesive layer. Processing of agent layer. Such a cut-to-size die-bonding film is suitable for achieving good severance of the adhesive layer in the expansion step and for achieving good pickup of the semiconductor wafer with the adhesive layer in the pickup step, and from the viewpoint or control of reducing the number of manufacturing steps From the viewpoint of manufacturing cost, etc., it is suitable for efficient manufacturing. The epoxy value of the second acrylic polymer in the adhesive layer in the cut crystal adhesive film is preferably 0.05 eq / kg or more, more preferably 0.1 eq / kg or more, and more preferably 0.2 eq / kg or more. This structure is suitable for ensuring the adhesion or adhesion between the adhesive layer of the dicing tape and the adhesive layer thereon, and is suitable for suppressing the partial peeling of the semiconductor wafer with the adhesive layer from the adhesive layer during the expansion step. This is the case of uplift. The epoxy value of the second acrylic polymer is preferably 1 eq / kg or less, and more preferably 0.9 eq / kg or less. Such a structure is suitable for suppressing the binding interaction acting in the direction of the lamination between the adhesive layer and the adhesive layer of the dicing tape, and therefore, it is beneficial to achieve good pickup in the pickup step. The content ratio of the second acrylic polymer having such an epoxy value in the adhesive layer is preferably 5 to 95% by mass, and more preferably 40 to 80% by mass. The carboxylic acid value of the second acrylic polymer in the adhesive layer in the cut crystal adhesive film is preferably 1 mgKOH / g or more, more preferably 3 mgKOH / g or more, and even more preferably 5 mgKOH / g or more. This structure is suitable for ensuring the adhesion or adhesion between the adhesive layer of the dicing tape and the adhesive layer thereon, and is suitable for suppressing the partial peeling of the semiconductor wafer with the adhesive layer from the adhesive layer during the expansion step. This is the case of uplift. The carboxylic acid value of the second acrylic polymer is preferably 20 mgKOH / g or less, and more preferably 18 mgKOH / g or less. Such a structure is suitable for suppressing the binding interaction acting in the direction of the lamination between the adhesive layer and the adhesive layer of the dicing tape, and therefore, it is beneficial to achieve good pickup in the pickup step. The content ratio of the second acrylic polymer having such a carboxylic acid value in the adhesive layer is preferably 5 to 95% by mass, and more preferably 40 to 80% by mass. In the first acrylic polymer in the adhesive layer in the cut crystal adhesive film, the unit derived from lauryl (meth) acrylate is larger than the unit derived from 2-hydroxyethyl (meth) acrylate. The molar ratio is preferably 1 or more, more preferably 3 or more, and even more preferably 5 or more. This structure is suitable for ensuring that the adhesive layer between the dicing tape and the adhesive layer thereon has a high shear adhesive force as described above, and is suitable for suppressing the mutual effect of the bonding effect acting in the direction of the lamination between the two layers. Effect, therefore, it is advantageous to achieve good picking in the picking step. The molar ratio is preferably 40 or less, more preferably 35 or less, and even more preferably 30 or less. This structure is suitable for ensuring the adhesion or adhesion between the adhesive layer and the adhesive layer of the dicing tape, and is suitable for suppressing the partial peeling of the semiconductor wafer with the adhesive layer from the adhesive layer in the expansion step, i.e., bulging. Situation. In the cut crystal adhesive film, the adhesive layer of the cut crystal band is preferably a radiation-hardening adhesive layer. In a T-type peeling test at a temperature of 23 ° C. and a peeling speed of 300 mm / min, the radiation is hardened. The peeling force between the adhesive layer and the adhesive layer is preferably 0.04 N / 20 mm or more, more preferably 0.05 N / 20 mm or more, and even more preferably 0.08 N / 20 mm or more. This structure is suitable for ensuring the adhesion or adhesion between the adhesive layer of the dicing tape and the adhesive layer thereon, and is suitable for suppressing the partial peeling of the semiconductor wafer with the adhesive layer from the adhesive layer during the expansion step. This is the case of uplift. In a T-type peel test at a temperature of 23 ° C and a peel speed of 300 mm / min, the peel force between the adhesive layer and the adhesive layer after radiation hardening is preferably 0.3 N / 20 mm or less, and more preferably 0.25 N / 20 mm or less, more preferably 0.22 N / 20 mm or less. This configuration is suitable for achieving good pickup in the pickup step. The first acrylic polymer in the adhesive layer in the cut crystal film is preferably an adduct of an unsaturated functional group-containing isocyanate compound as a radiation polymerizable component. In this case, the molar ratio of the unsaturated functional group-containing isocyanate compound in the first acrylic polymer to the unit derived from 2-hydroxyethyl (meth) acrylate is preferably 0.1 or more, more preferably 0.2 or more, more preferably 0.3 or more. These structures are suitable for moderately high elastic modulus of the adhesive layer by the reaction between the first acrylic polymer and the unsaturated functional group-containing isocyanate compound, and are favorable for good cutting of the adhesive layer in the expansion step. From the viewpoint of reducing low-molecular-weight components in the adhesive layer after curing, the first acrylic polymer and the first acrylic polymer used to form the first acrylic polymer to which an isocyanate compound containing an unsaturated functional group is added include: Molar ratio of the unsaturated functional group-containing isocyanate compound to the unit derived from 2-hydroxyethyl (meth) acrylate in the reaction composition of the unsaturated functional group-containing isocyanate compound in the first acrylic polymer It is preferably 2 or less, more preferably 1.5 or less, and even more preferably 1.3 or less.

圖1係本發明之一實施形態之切晶黏晶膜X之剖面模式圖。切晶黏晶膜X具有包含切晶帶10與接著劑層20之積層構造。切晶帶10具有包含基材11與黏著劑層12之積層構造。接著劑層20可剝離地密接於切晶帶10之黏著劑層12或其黏著面12a。切晶黏晶膜X可用於在半導體裝置製造時獲得附接著劑層之半導體晶片之過程中之例如下述擴張步驟，具有與半導體晶圓等工件對應尺寸之圓盤形狀。切晶黏晶膜X之直徑例如處於345～380 mm之範圍內(12英吋晶圓對應型)、245～280 mm之範圍內(8英吋晶圓對應型)、195～230 mm之範圍內(6英吋晶圓對應型)、或495～530 mm之範圍內(18英吋晶圓對應型)。 切晶帶10之基材11係於切晶帶10或切晶黏晶膜X中作為支持體發揮功能之元件。基材11可較佳地使用例如塑膠膜等塑膠基材。作為該塑膠基材之構成材料，例如可列舉：聚氯乙烯、聚偏二氯乙烯、聚烯烴、聚酯、聚胺基甲酸酯、聚碳酸酯、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳香族聚醯胺、氟樹脂、纖維素系樹脂、及聚矽氧樹脂。作為聚烯烴，例如可列舉：低密度聚乙烯、直鏈狀低密度聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚合聚丙烯、嵌段共聚合聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯、乙烯-乙酸乙烯酯共聚物(EVA)、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-丁烯共聚物、及乙烯-己烯共聚物。作為聚酯，例如可列舉：聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯、及聚對苯二甲酸丁二酯(PBT)。基材11可包含一種材料，亦可包含兩種以上之材料。基材11可具有單層構造，亦可具有多層構造。就確保基材11具有良好之熱收縮性，以便於利用切晶帶10或基材11之局部熱收縮而維持藉由下述間隔用擴張步驟所實現之晶片間隔距離之觀點而言，基材11較佳為包含乙烯-乙酸乙烯酯共聚物作為主成分。所謂基材11之主成分係指於構成成分中占最大質量比率之成分。又，於基材11包含塑膠膜之情形時，該基材11可為無延伸膜，亦可為單軸延伸膜，亦可為雙軸延伸膜。於基材11上之黏著劑層12如下所述為紫外線硬化型之情形時，基材11較佳為具有紫外線透過性。 於使用切晶黏晶膜X時，於例如藉由局部加熱使切晶帶10或基材11收縮之情形時，例如於利用切晶帶10或基材11之局部熱收縮而維持藉由下述間隔用擴張步驟所實現之晶片間隔距離之情形時，基材11較佳為具有熱收縮性。又，於基材11包含塑膠膜之情形時，就使切晶帶10或基材11實現各向同性熱收縮性之方面而言，基材11較佳為雙軸延伸膜。切晶帶10或基材11於加熱溫度100℃及加熱處理時間60秒之條件下進行之加熱處理試驗中之熱收縮率較佳為1～30%，更佳為2～25%，更佳為3～20%，更佳為5～20%。該熱收縮率係指所謂MD方向之熱收縮率及所謂TD方向之熱收縮率中之至少一方向之熱收縮率。 亦可對基材11中之黏著劑層12側之表面實施用以提高與黏著劑層12之密接性之物理處理、化學處理或底塗處理。作為物理處理，例如可列舉：電暈處理、電漿處理、噴砂加工處理、臭氧暴露處理、火焰暴露處理、高壓電擊暴露處理、及離子化放射線處理。作為化學處理，例如可列舉鉻酸處理。用以提高密接性之該處理較佳為對基材11中之黏著劑層12側之整個表面實施。 就確保基材11作為切晶帶10或切晶黏晶膜X中之支持體發揮功能所需之強度之觀點而言，基材11之厚度較佳為40 μm以上，更佳為50 μm以上，更佳為55 μm以上，更佳為60 μm以上。又，就使切晶帶10或切晶黏晶膜X實現適度之可撓性之觀點而言，基材11之厚度較佳為200 μm以下，更佳為180 μm以下，更佳為150 μm以下。 切晶帶10之黏著劑層12含有至少包含源自(甲基)丙烯酸月桂酯之單體單元與源自(甲基)丙烯酸2-羥基乙酯之單體單元的丙烯酸系聚合物(第1丙烯酸系聚合物)作為基礎聚合物。第1丙烯酸系聚合物係至少包含(甲基)丙烯酸月桂酯與(甲基)丙烯酸2-羥基乙酯作為構成單體之丙烯酸系共聚物。於該第1丙烯酸系聚合物中，源自(甲基)丙烯酸月桂酯之單元相對於源自(甲基)丙烯酸2-羥基乙酯之單元的莫耳比率較佳為1以上，更佳為3以上，更佳為5以上。又，該莫耳比率較佳為40以下，更佳為35以下，更佳為30以下。本實施形態中，「(甲基)丙烯酸酯」意指「丙烯酸酯」及/或「甲基丙烯酸酯」。 第1丙烯酸系聚合物較佳為包含源自丙烯酸酯及/或甲基丙烯酸酯之單體單元作為質量比率最大之單體單元，如上所述，至少包含源自(甲基)丙烯酸月桂酯之單體單元與源自(甲基)丙烯酸2-羥基乙酯之單體單元。 作為用以形成第1丙烯酸系聚合物之單體單元之(甲基)丙烯酸酯，例如可列舉(甲基)丙烯酸烷基酯、(甲基)丙烯酸環烷基酯、(甲基)丙烯酸芳基酯等含烴基之(甲基)丙烯酸酯。作為(甲基)丙烯酸月桂酯以外之(甲基)丙烯酸烷基酯，例如可列舉：(甲基)丙烯酸之甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、及二十烷基酯。作為(甲基)丙烯酸環烷基酯，例如可列舉：(甲基)丙烯酸之環戊酯及環己酯。作為(甲基)丙烯酸芳基酯，例如可列舉：(甲基)丙烯酸苯酯及(甲基)丙烯酸苄酯。作為用以形成第1丙烯酸系聚合物之(甲基)丙烯酸酯，可僅使用(甲基)丙烯酸月桂酯，亦可與(甲基)丙烯酸月桂酯一起使用一種或兩種以上之(甲基)丙烯酸酯。就使黏著劑層12適當表現出源於(甲基)丙烯酸酯之黏著性等基本特性之方面而言，用以形成第1丙烯酸系聚合物之全部單體成分中之(甲基)丙烯酸酯之比率較佳為40質量%以上，更佳為60質量%以上。 為了實現凝集力或耐熱性等之改質，第1丙烯酸系聚合物除包含源自(甲基)丙烯酸2-羥基乙酯之單元以外，亦可包含源自能夠與(甲基)丙烯酸酯共聚合之其他單體的單體單元。作為此種單體成分，例如可列舉：含羧基之單體、酸酐單體、含羥基之單體、含縮水甘油基之單體、含磺酸基之單體、含磷酸基之單體、丙烯醯胺、及丙烯腈等含官能基之單體等。作為含羧基之單體，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸、及丁烯酸。作為酸酐單體，例如可列舉：順丁烯二酸酐及伊康酸酐。作為(甲基)丙烯酸2-羥基乙酯以外之含羥基之單體，例如可列舉：(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、及(甲基)丙烯酸(4-羥基甲基環己基)甲酯。作為含縮水甘油基之單體，例如可列舉：(甲基)丙烯酸縮水甘油酯及(甲基)丙烯酸甲基縮水甘油酯。作為含磺酸基之單體，例如可列舉：苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、及(甲基)丙烯醯氧基萘磺酸。作為含磷酸基之單體，例如可列舉：丙烯醯基磷酸2-羥基乙酯。作為用以形成第1丙烯酸系聚合物之該其他單體，可使用一種單體，亦可使用兩種以上之單體。就使黏著劑層12適當表現出源於(甲基)丙烯酸酯之黏著性等基本特性之方面而言，用以形成第1丙烯酸系聚合物之全部單體成分中之該其他單體成分之比率較佳為60質量%以下，更佳為40質量%以下。 第1丙烯酸系聚合物為了於其聚合物骨架中形成交聯結構，亦可包含源自能夠與(甲基)丙烯酸酯等單體成分共聚合之多官能性單體的單體單元。作為此種多官能性單體，例如可列舉：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯(即聚(甲基)丙烯酸縮水甘油酯)、聚酯(甲基)丙烯酸酯、及(甲基)丙烯酸胺基甲酸酯。作為用以形成第1丙烯酸系聚合物之多官能性單體，可使用一種多官能性單體，亦可使用兩種以上之多官能性單體。就使黏著劑層12適當表現出源於(甲基)丙烯酸酯之黏著性等基本特性之方面而言，用以形成第1丙烯酸系聚合物之全部單體成分中之多官能性單體之比率較佳為40質量%以下，更佳為30質量%以下。 第1丙烯酸系聚合物可由用以形成其之原料單體聚合而獲得。作為聚合方法，例如可列舉：溶液聚合、乳化聚合、塊狀聚合、及懸浮聚合。就使用切晶帶10或切晶黏晶膜X之半導體裝置製造方法中之高度之潔淨性之觀點而言，切晶帶10或切晶黏晶膜X中之黏著劑層12中之低分子量物質宜較少，因此，第1丙烯酸系聚合物之數量平均分子量較佳為10萬以上，更佳為20萬～300萬。 為了提高作為基礎聚合物之第1丙烯酸系聚合物之數量平均分子量，黏著劑層12或用以形成其之黏著劑例如可含有外部交聯劑。作為用以與第1丙烯酸系聚合物反應而形成交聯結構之外部交聯劑，可列舉：多異氰酸酯化合物、環氧化合物、多元醇化合物(多酚系化合物等)、氮丙啶化合物、及三聚氰胺系交聯劑。黏著劑層12或用以形成其之黏著劑中之外部交聯劑之含量相對於基礎聚合物100質量份，較佳為5質量份以下，更佳為0.1～5質量份。 用以構成此種黏著劑層12之黏著劑可採用藉由放射線照射或加熱等外部作用而能夠刻意地減弱黏著力之黏著劑(黏著力減弱型黏著劑)之構成，亦可採用黏著力幾乎或完全不會因外部作用而減弱之黏著劑(黏著力非減弱型黏著劑)之構成。可根據使用切晶黏晶膜X進行單片化之半導體晶片之單片化方法或條件等適當選擇採用何種構成。於使用黏著力減弱型黏著劑作為黏著劑層12中之黏著劑之情形時，於切晶黏晶膜X之製造過程或使用過程中，可靈活運用黏著劑層12表現出相對較高之黏著力之狀態與表現出相對較低之黏著力之狀態。例如於將切晶黏晶膜X用於特定之晶圓切割步驟時，利用黏著劑層12表現出相對較高之黏著力之狀態而能夠抑制、防止接著劑層20自黏著劑層12之隆起或剝離，另一方面，於其後用以自切晶黏晶膜X之切晶帶10拾取附接著劑層之半導體晶片之拾取步驟中，藉由減弱黏著劑層12之黏著力後，能夠適當地自黏著劑層12拾取附接著劑層之半導體晶片。作為用以構成黏著劑層12之放射線硬化型黏著劑，例如可使用藉由照射電子束、紫外線、α射線、β射線、γ射線或X射線而硬化之類型之黏著劑，可尤佳地使用藉由照射紫外線而硬化之類型之黏著劑(紫外線硬化型黏著劑)。 作為黏著劑層12中之放射線硬化型黏著劑，除上述第1丙烯酸系聚合物以外，亦可列舉含有具有放射線聚合性碳-碳雙鍵等不飽和官能基之放射線聚合性之單體成分或低聚物成分的添加型之放射線硬化型黏著劑。 作為用以形成放射線硬化型黏著劑之上述放射線聚合性單體成分，例如可列舉：三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、及1,4-丁二醇二(甲基)丙烯酸酯。作為用以形成放射線硬化型黏著劑之上述放射線聚合性低聚物成分，例如可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，宜為分子量100～30000左右者。放射線硬化型黏著劑中之放射線聚合性之單體成分或低聚物成分之總含量係於能夠適當減弱所形成之黏著劑層12之黏著力之範圍內決定，相對於丙烯酸系聚合物等基礎聚合物100質量份，例如為5～500質量份，較佳為40～150質量份。又，作為添加型之放射線硬化型黏著劑，例如可使用日本專利特開昭60-196956號公報中所揭示者。 作為黏著劑層12中之放射線硬化型黏著劑，例如亦可列舉含有於聚合物側鏈、或於聚合物主鏈中、聚合物主鏈末端具有放射線聚合性碳-碳雙鍵等不飽和官能基之第1丙烯酸系聚合物的內在型放射線硬化型黏著劑。此種內在型放射線硬化型黏著劑適於抑制因所形成之黏著劑層12內低分子量成分之移動而非意圖引起之黏著特性之經時變化。 作為於第1丙烯酸系聚合物中導入放射線聚合性碳-碳雙鍵之方法，例如可列舉如下方法：使包含具有特定官能基(第1官能基)之單體之原料單體共聚合而獲得第1丙烯酸系聚合物後，於維持碳-碳雙鍵之放射線聚合性之狀態下，使第1丙烯酸系聚合物和具有能夠與第1官能基之間發生反應而鍵結之特定官能基(第2官能基)及放射線聚合性碳-碳雙鍵之化合物進行縮合反應或加成反應。第1丙烯酸系聚合物至少具有源自(甲基)丙烯酸2-羥基乙酯之羥基作為第1官能基。 作為第1官能基與第2官能基之組合，例如可列舉：羧基與環氧基、環氧基與羧基、羧基與氮丙啶基、氮丙啶基與羧基、羥基與異氰酸基、異氰酸基與羥基。該等組合之中，就易進行反應追蹤之觀點而言，宜為羥基與異氰酸基之組合或異氰酸基與羥基之組合。又，就製作具有反應性較高之異氰酸基之聚合物的技術難度較大，另一方面，第1丙烯酸系聚合物之易製作性或易獲得性之觀點而言，更宜為第1丙烯酸系聚合物側之上述第1官能基為羥基且上述第2官能基為異氰酸基之情形。於該情形時，作為同時具有放射線聚合性碳-碳雙鍵與作為第2官能基之異氰酸基之異氰酸酯化合物，即，放射線聚合性之含不飽和官能基之異氰酸酯化合物，例如可列舉：甲基丙烯醯基異氰酸酯、異氰酸2-甲基丙烯醯氧基乙酯(MOI)、及異氰酸間異丙烯基-α,α-二甲基苄酯。於對第1丙烯酸系聚合物導入或加成有含不飽和官能基之異氰酸酯化合物之情形時，第1丙烯酸系聚合物中之含不飽和官能基之異氰酸酯化合物相對於源自(甲基)丙烯酸2-羥基乙酯之單元的莫耳比率較佳為0.1以上，更佳為0.2以上，更佳為0.3以上。又，作為含第1官能基之丙烯酸系聚合物，宜為包含源自上述含羥基之單體之單體單元者，亦宜為包含源自2-羥基乙基乙烯醚、或4-羥基丁基乙烯醚、二乙二醇單乙烯醚等醚系化合物之單體單元者。 黏著劑層12中之放射線硬化型黏著劑較佳為含有光聚合起始劑。作為光聚合起始劑，例如可列舉：α-酮醇系化合物、苯乙酮系化合物、安息香醚系化合物、縮酮系化合物、芳香族磺醯氯系化合物、光活性肟系化合物、二苯甲酮系化合物、9-氧硫系化合物、樟腦醌、鹵代酮、醯基膦氧化物、及醯基磷酸酯。作為α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、及1-羥基環己基苯基酮。作為苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、2,2-二乙氧基苯乙酮、及2-甲基-1-[4-(甲硫基)-苯基]-2-啉基丙烷-1。作為安息香醚系化合物，例如可列舉：安息香乙醚、安息香異丙醚、及茴香偶姻甲醚。作為縮酮系化合物，例如可列舉：苯偶醯二甲基縮酮。作為芳香族磺醯氯系化合物，例如可列舉：2-萘磺醯氯。作為光活性肟系化合物，例如可列舉：1-苯酮-1,2-丙烷二酮-2-(O-乙氧基羰基)肟。作為二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯苯甲酸、及3,3'-二甲基-4-甲氧基二苯甲酮。作為9-氧硫系化合物，例如可列舉：9-氧硫、2-氯9-氧硫、2-甲基9-氧硫、2,4-二甲基9-氧硫、異丙基9-氧硫、2,4-二氯9-氧硫、2,4-二乙基9-氧硫、及2,4-二異丙基9-氧硫。黏著劑層12中之放射線硬化型黏著劑中之光聚合起始劑之含量相對於丙烯酸系聚合物等基礎聚合物100質量份例如為0.05～20質量份。 作為上述黏著力非減弱型黏著劑，例如可列舉感壓型黏著劑。該感壓型黏著劑包括預先藉由照射放射線使上文關於黏著力減弱型黏著劑所記述之放射線硬化型黏著劑硬化但仍確保特定黏著力之形態之黏著劑。預先藉由照射放射線使放射線硬化型黏著劑硬化之形態之黏著劑(經放射線照射過之放射線硬化型黏著劑)即便因放射線照射導致黏著力減弱，但鑒於聚合物成分之含量，仍能夠表現出源於該聚合物成分之黏著性，能夠發揮可用於在切晶步驟等中黏著保持被黏著體之黏著力。於本實施形態之黏著劑層12中，可使用一種黏著力非減弱型黏著劑，亦可使用兩種以上之黏著力非減弱型黏著劑。又，黏著劑層12整體可由黏著力非減弱型黏著劑所形成，黏著劑層12亦可局部由黏著力非減弱型黏著劑所形成。 另一方面，作為黏著劑層12中之經放射線照射過之放射線硬化型黏著劑以外之感壓型黏著劑，可較佳地使用例如以上述第1丙烯酸系聚合物作為基礎聚合物之丙烯酸系黏著劑。 黏著劑層12或用以構成其之黏著劑除含有上述各成分以外，亦可含有交聯促進劑、黏著賦予劑、防老化劑、顏料或染料等著色劑等。著色劑可為受到放射線照射而著色之化合物。作為此種化合物，例如可列舉隱色染料。 黏著劑層12之厚度較佳為1～50 μm，更佳為2～30 μm，更佳為5～25 μm。此種構成適於取得例如黏著劑層12包含放射線硬化型黏著劑之情形時該黏著劑層12於放射線硬化之前後對接著劑層20之接著力之平衡性。 切晶黏晶膜X之接著劑層20兼備作為表現出熱硬化性之黏晶用接著劑之功能、及用以保持半導體晶圓等工件與環狀框等框構件之黏著功能。用以構成接著劑層20之黏/接著劑可具有包含熱硬化性樹脂與例如作為黏合劑成分之熱塑性樹脂的組成，亦可具有包含帶有能夠與硬化劑反應而生成鍵之熱硬化性官能基之熱塑性樹脂的組成。於用以構成接著劑層20之黏/接著劑具有包含帶有熱硬化性官能基之熱塑性樹脂的組成之情形時，該黏/接著劑無需進而包含熱硬化性樹脂(環氧樹脂等)。接著劑層20至少含有具有腈基之丙烯酸系聚合物(第2丙烯酸系聚合物)作為該等熱塑性樹脂。 接著劑層20所含之第2丙烯酸系聚合物較佳為包含源自(甲基)丙烯酸酯之單體單元作為質量比率最大之單體單元。作為此種(甲基)丙烯酸酯，例如可使用與上文關於黏著劑層12形成用第1丙烯酸系聚合物所記述之(甲基)丙烯酸酯相同者。並且，第2丙烯酸系聚合物含有源自含腈基之單體之單體單元。作為含腈基之單體，例如可列舉：丙烯腈、甲基丙烯腈、及氰基苯乙烯。又，第2丙烯酸系聚合物除含有源自含腈基之單體之單體單元以外，亦可含有源自能夠與(甲基)丙烯酸酯共聚合之其他單體之單體單元。作為此種其他單體成分，例如可列舉：含羧基之單體、酸酐單體、含羥基之單體、含縮水甘油基之單體、含磺酸基之單體、含磷酸基之單體、丙烯醯胺等含官能基之單體、或者各種多官能性單體，具體而言，可使用與上文關於黏著劑層12形成用第1丙烯酸系聚合物所記述之能夠與(甲基)丙烯酸酯共聚合之其他單體相同者。 於具有腈基之第2丙烯酸系聚合物之紅外線吸收光譜中，源自腈基之2240 cm-1 附近之波峰(屬於C≡N伸縮振動之吸收峰)之高度相對於源自羰基之1730 cm-1 附近之波峰(屬於C=O伸縮振動之吸收峰)之高度的比值為0.01以上，較佳為0.015以上，更佳為0.02以上，且為0.1以下，較佳為0.09以下，更佳為0.08以下。即，將第2丙烯酸系聚合物之腈基相對含量設定為使上述比值處於此種範圍內之程度。 作為熱塑性樹脂，例如可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、PET或PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、及氟樹脂。於構成接著劑層20時，可使用一種熱塑性樹脂，亦可使用兩種以上之熱塑性樹脂。又，就同時實現接著劑層20於室溫及其附近之溫度下對下述環狀框之貼附性與防止剝離時之殘渣之觀點而言，接著劑層20較佳為包含玻璃轉移溫度為-10～10℃之聚合物作為熱塑性樹脂之主成分。所謂熱塑性樹脂之主成分係指於熱塑性樹脂成分中占最大質量比率之樹脂成分。 關於聚合物之玻璃轉移溫度，可採用基於下述Fox式所求出之玻璃轉移溫度(理論值)。Fox式係聚合物之玻璃轉移溫度Tg與該聚合物中之各構成單體之均聚物之玻璃轉移溫度Tgi的關係式。於下述Fox式中，Tg表示聚合物之玻璃轉移溫度(℃)，Wi表示構成該聚合物之單體i之重量分率，Tgi表示單體i之均聚物之玻璃轉移溫度(℃)。均聚物之玻璃轉移溫度可採用文獻值，例如於「新高分子文庫7 塗料用合成樹脂入門」(北岡協三 著，高分子刊行會，1995年)或「Acrylic Ester Catalog(1997年版)」(Mitsubishi Rayon股份有限公司)中列舉有各種均聚物之玻璃轉移溫度。另一方面，單體之均聚物之玻璃轉移溫度亦可藉由日本專利特開2007-51271號公報中所具體記載之方法而求出。 Fox式：1/(273＋Tg)＝Σ[Wi/(273＋Tgi)] 於接著劑層20同時包含熱塑性樹脂與熱硬化性樹脂之情形時，作為該熱硬化性樹脂，例如可列舉：環氧樹脂、酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、及熱硬化性聚醯亞胺樹脂。於構成接著劑層20時，可使用一種熱硬化性樹脂，亦可使用兩種以上之熱硬化性樹脂。作為接著劑層20所含之熱硬化性樹脂，較佳為環氧樹脂，其原因在於存在可能引起黏晶對象之半導體晶片腐蝕之離子性雜質等之含量較少之傾向。又，作為環氧樹脂之硬化劑，較佳為酚樹脂。 作為環氧樹脂，例如可列舉：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型、乙內醯脲型、異氰尿酸三縮水甘油酯型、及縮水甘油胺型之環氧樹脂。作為接著劑層20所含之環氧樹脂，就與作為硬化劑之酚樹脂之反應性充分且耐熱性優異之方面而言，較佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型環氧樹脂、及四酚基乙烷型環氧樹脂。 關於可發揮作為環氧樹脂硬化劑之作用之酚樹脂，例如可列舉：酚醛清漆型酚樹脂、可溶酚醛型酚樹脂、及聚對羥基苯乙烯等聚羥基苯乙烯。作為酚醛清漆型酚樹脂，例如可列舉：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、及壬基苯酚酚醛清漆樹脂。作為可發揮作為環氧樹脂硬化劑之作用之酚樹脂，可使用一種酚樹脂，亦可使用兩種以上之酚樹脂。苯酚酚醛清漆樹脂或苯酚芳烷基樹脂於用作作為黏晶用接著劑之環氧樹脂之硬化劑之情形時，存在可提高該接著劑之連接可靠性之傾向，因此作為接著劑層20所含之環氧樹脂之硬化劑較佳。 於接著劑層20中，就使環氧樹脂與酚樹脂之硬化反應充分進行之觀點而言，以使該酚樹脂中之羥基相對於環氧樹脂成分中之環氧基1當量而較佳成為0.5～2.0當量、更佳成為0.8～1.2當量的量包含酚樹脂。 就使接著劑層20適當表現出作為熱硬化型接著劑之功能之觀點而言，接著劑層20中之熱硬化性樹脂之含有比率較佳為5～60質量%，更佳為10～50質量%。 於接著劑層20含有含熱硬化性官能基之上述第2丙烯酸系聚合物之情形時，作為該熱硬化性官能基，例如可列舉：環氧基或縮水甘油基、羧基、羥基、及異氰酸基。該等之中，可較佳地使用環氧基及羧基。即，作為含熱硬化性官能基之第2丙烯酸系聚合物，可較佳地使用含環氧基及/或羧基之第2丙烯酸系聚合物。又，作為含熱硬化性官能基之第2丙烯酸系聚合物之硬化劑，例如可使用上文關於可能成為黏著劑層12形成用黏著劑之一成分的外部交聯劑所記述者。於含熱硬化性官能基之第2丙烯酸系聚合物中之熱硬化性官能基為環氧基之情形時，可較佳地使用多酚系化合物作為硬化劑，例如可使用上述各種酚樹脂。 接著劑層20中之第2丙烯酸系聚合物之環氧值較佳為0.05 eq/kg以上，更佳為0.1 eq/kg以上，更佳為0.2 eq/kg以上。又，該第2丙烯酸系聚合物之環氧值較佳為1 eq/kg以下，更佳為0.9 eq/kg以下。此種環氧值之第2丙烯酸系聚合物於接著劑層20中之含有比率較佳為5～95質量%，更佳為40～80質量%。 接著劑層20中之第2丙烯酸系聚合物之羧酸值較佳為1 mgKOH/g以上，更佳為3 mgKOH/g以上，更佳為5 mgKOH/g以上。又，該第2丙烯酸系聚合物之羧酸值較佳為20 mgKOH/g以下，更佳為18 mgKOH/g以下。此種羧酸值之第2丙烯酸系聚合物於接著劑層20中之含有比率較佳為5～95質量%，更佳為40～80質量%。 對於在以黏晶為目的而進行硬化前之接著劑層20，為了實現一定程度之交聯度，較佳為例如於接著劑層形成用樹脂組合物中調配能夠與接著劑層20所含之上述樹脂之分子鏈末端之官能基等反應並鍵結之多官能性化合物作為交聯劑。此種構成適於提高接著劑層20於高溫下之接著特性，且適於實現接著劑層20於耐熱性上之改善。作為此種交聯劑，例如可列舉多異氰酸酯化合物。作為多異氰酸酯化合物，例如可列舉：甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、對苯二異氰酸酯、1,5-萘二異氰酸酯、及多元醇與二異氰酸酯之加成物。關於接著劑層形成用樹脂組合物中之交聯劑之含量，相對於具有能夠與該交聯劑反應並鍵結之上述官能基之樹脂100質量份，就提高所形成之接著劑層20之凝集力之觀點而言，較佳為0.05質量份以上，就提高所形成之接著劑層20之接著力之觀點而言，較佳為7質量份以下。又，作為接著劑層20中之交聯劑，亦可將環氧樹脂等其他多官能性化合物與多異氰酸酯化合物併用。 接著劑層20中之如上所述之高分子量成分之含有比率較佳為50～100質量%，更佳為50～80質量%。所謂高分子量成分係指重量平均分子量10000以上之成分。此種構成有利於同時實現接著劑層20於室溫及其附近之溫度下對下述環狀框之貼附性與防止剝離時之殘渣。又，接著劑層20亦可含有23℃下為液狀之液狀樹脂。於接著劑層20含有此種液狀樹脂之情形時，接著劑層20中之該液狀樹脂之含有比率較佳為1～10質量%，更佳為1～5質量%。此種構成有利於同時實現接著劑層20於室溫及其附近之溫度下對下述環狀框之貼附性與防止剝離時之殘渣。 接著劑層20亦可含有填料。藉由對接著劑層20調配填料，可調整接著劑層20之拉伸儲存彈性模數等彈性模數、或導電性、導熱性等物性。作為填料，可列舉無機填料及有機填料，尤佳為無機填料。作為無機填料，例如可列舉：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶質二氧化矽、非晶質二氧化矽，此外亦可列舉鋁、金、銀、銅、鎳等金屬單質、或合金、非晶質碳黑、石墨。填料可具有球狀、針狀、薄片狀等各種形狀。作為接著劑層20中之填料，可使用一種填料，亦可使用兩種以上之填料。為了確保接著劑層20於下述低溫擴張步驟中對環狀框之貼附性，接著劑層20中之填料含有比率較佳為30質量%以下，更佳為25質量%以下。 接著劑層20含有填料之情形時之該填料之平均粒徑較佳為0.005～10 μm，更佳為0.005～1 μm。該填料之平均粒徑為0.005 μm以上之構成適於實現接著劑層20對半導體晶圓等被黏著體之較高之潤濕性或接著性。該填料之平均粒徑為10 μm以下之構成適於接著劑層20享有充分之填料添加效果且適於確保耐熱性。填料之平均粒徑可使用例如光度式粒度分佈計(商品名「LA-910」，堀場製作所股份有限公司製造)而求出。 接著劑層20視需要亦可含有其他成分。作為該其他成分，例如可列舉：阻燃劑、矽烷偶合劑、及離子捕捉劑。作為阻燃劑，例如可列舉：三氧化銻、五氧化銻、及溴化環氧樹脂。作為矽烷偶合劑，例如可列舉：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、及γ-縮水甘油氧基丙基甲基二乙氧基矽烷。作為離子捕捉劑，例如可列舉：水滑石類、氫氧化鉍、含水氧化銻(例如東亞合成股份有限公司製造之「IXE-300」)、特定結構之磷酸鋯(例如東亞合成股份有限公司製造之「IXE-100」)、矽酸鎂(例如協和化學工業股份有限公司製造之「Kyoword 600」)、及矽酸鋁(例如協和化學工業股份有限公司製造之「Kyoword 700」)。亦可使用能夠與金屬離子之間形成錯合物之化合物作為離子捕捉劑。作為此種化合物，例如可列舉：三唑系化合物、四唑系化合物、及聯吡啶系化合物。該等之中，就與金屬離子之間所形成之錯合物之穩定性之觀點而言，較佳為三唑系化合物。作為此種三唑系化合物，例如可列舉：1,2,3-苯并三唑、1-{N,N-雙(2-乙基己基)胺基甲基}苯并三唑、羧基苯并三唑、2-(2-羥基-5-甲基苯基)苯并三唑、2-(2-羥基-3,5-二第三丁基苯基)-5-氯苯并三唑、2-(2-羥基-3-第三丁基-5-甲基苯基)-5-氯苯并三唑、2-(2-羥基-3,5-二第三戊基苯基)苯并三唑、2-(2-羥基-5-第三辛基苯基)苯并三唑、6-(2-苯并三唑基)-4-第三辛基-6'-第三丁基-4'-甲基-2,2'-亞甲基雙酚、1-(2,3-二羥基丙基)苯并三唑、1-(1,2-二羧基二乙基)苯并三唑、1-(2-乙基己基胺基甲基)苯并三唑、2,4-二第三戊基-6-{(H-苯并三唑-1-基)甲基}苯酚、2-(2-羥基-5-第三丁基苯基)-2H-苯并三唑、3-[3-第三丁基-4-羥基-5-(5-氯-2H-苯并三唑-2-基)苯基]丙酸辛酯、3-[3-第三丁基-4-羥基-5-(5-氯-2H-苯并三唑-2-基)苯基]丙酸2-乙基己酯、2-(2H-苯并三唑-2-基)-6-(1-甲基-1-苯基乙基)-4-(1,1,3,3-四甲基丁基)苯酚、2-(2H-苯并三唑-2-基)-4-第三丁基苯酚、2-(2-羥基-5-甲基苯基)苯并三唑、2-(2-羥基-5-第三辛基苯基)苯并三唑、2-(3-第三丁基-2-羥基-5-甲基苯基)-5-氯苯并三唑、2-(2-羥基-3,5-二第三戊基苯基)苯并三唑、2-(2-羥基-3,5-二第三丁基苯基)-5-氯-苯并三唑、2-[2-羥基-3,5-二(1,1-二甲基苄基)苯基]-2H-苯并三唑、2,2'-亞甲基雙[6-(2H-苯并三唑-2-基)-4-(1,1,3,3-四甲基丁基)苯酚]、2-[2-羥基-3,5-雙(α,α-二甲基苄基)苯基]-2H-苯并三唑、及3-[3-(2H-苯并三唑-2-基)-5-第三丁基-4-羥基苯基]丙酸甲酯。又，亦可使用氫醌(quinol)化合物、或羥基蒽醌化合物、多酚化合物等特定之含羥基之化合物作為離子捕捉劑。作為此種含羥基之化合物，具體而言，可列舉：1,2-苯二酚、茜素、蒽絳酚(anthrarufin)、單寧、沒食子酸、沒食子酸甲酯、連苯三酚等。作為如上所述之其他成分，可使用一種成分，亦可使用兩種以上之成分。 接著劑層20之厚度例如處於1～200 μm之範圍。該厚度之下限較佳為3 μm，更佳為5 μm。該厚度之上限較佳為100 μm，更佳為80 μm。 於本實施形態中，於切晶黏晶膜X之面內方向D上，接著劑層20之外周端20e與切晶帶10中之基材11之外周端11e及黏著劑層12之外周端12e相距1000 μm以內、較佳為500 μm以內。即，接著劑層20之外周端20e於膜面內方向D上，其全周位於相對於基材11之外周端11e而言之內側1000 μm至外側1000 μm之間、較佳為內側500 μm至外側500 μm之間，且位於相對於黏著劑層12之外周端12e而言之內側1000 μm至外側1000 μm之間、較佳為內側500 μm至外側500 μm之間。於切晶帶10或其黏著劑層12與其上之接著劑層20在面內方向D上具有實質相同尺寸之該構成中，接著劑層20不僅包含工件貼附用區域且包含框貼附用區域。 於切晶黏晶膜X中，於切晶帶10之黏著劑層12為放射線硬化型黏著劑層之情形時，於溫度23℃及剝離速度300 mm/min之條件下之T型剝離試驗中，放射線硬化後之黏著劑層12與接著劑層20之間之剝離力較佳為0.04 N/20 mm以上，更佳為0.05 N/20 mm以上，更佳為0.08 N/20 mm以上。又，於溫度23℃及剝離速度300 mm/min之條件下之T型剝離試驗中，放射線硬化後之黏著劑層12與接著劑層20之間之剝離力較佳為0.3 N/20 mm以下，更佳為0.25 N/20 mm以下，更佳為0.22 N/20 mm以下。此種T型剝離試驗可使用拉伸試驗機(商品名「Autograph AGS-J」，島津製作所股份有限公司製造)進行。供於該試驗之試樣片係藉由如下方式製作。首先，自切晶黏晶膜X中之基材11側對黏著劑層12照射350 mJ/cm2 之紫外線使黏著劑層12硬化。繼而，於切晶黏晶膜X之接著劑層20側貼合襯底膠帶(商品名「BT-315」，日東電工股份有限公司製造)後，切出寬度50 mm×長度120 mm之尺寸之試驗片。 切晶黏晶膜X如圖2所示可附帶分隔件S。具體而言，可採用各切晶黏晶膜X分別附帶分隔件S之片狀之形態，亦可採用分隔件S呈長條狀而於其上配置複數個切晶黏晶膜X且將該分隔件S捲繞成輥狀之形態。分隔件S係用以被覆切晶黏晶膜X之接著劑層20之表面對其進行保護之元件，於使用切晶黏晶膜X時自該膜剝離。作為分隔件S，例如可列舉：聚對苯二甲酸乙二酯(PET)膜、聚乙烯膜、聚丙烯膜、表面經氟系剝離劑或丙烯酸長鏈烷基酯系剝離劑等剝離劑塗佈之塑膠膜或紙類等。分隔件S之厚度例如為5～200 μm。 具有如上所述之構成之切晶黏晶膜X例如可藉由如下方式製造。 首先，如圖3(a)所示，於分隔件S上製作接著劑膜20'。接著劑膜20'係待加工形成為上述接著劑層20之長條狀之膜。於製作接著劑膜20'時，製備接著劑層形成用之接著劑組合物後，首先，於分隔件S上塗佈該接著劑組合物而形成接著劑組合物層。作為接著劑組合物層之塗佈方法，例如可列舉：輥式塗佈、網版塗佈、及凹版塗佈。繼而，藉由加熱使該接著劑組合物層視需要進行交聯反應、或視需要進行乾燥。加熱溫度例如為70～160℃，加熱時間例如為1～5分鐘。藉由如上方式可於分隔件S上製作接著劑膜20'。 繼而，如圖3(b)所示，於接著劑膜20'上積層形成黏著劑層12'。黏著劑層12'係待加工形成為上述黏著劑層12者。於形成黏著劑層12'時，例如製備黏著劑層形成用之黏著劑溶液後，首先，於接著劑膜20'上塗佈該黏著劑溶液而形成黏著劑塗膜。作為黏著劑溶液之塗佈方法，例如可列舉：輥式塗佈、網版塗佈、及凹版塗佈。繼而，藉由加熱使該黏著劑塗膜視需要進行交聯反應、或視需要進行乾燥。加熱溫度例如為80～150℃，加熱時間例如為0.5～5分鐘。藉由此種積層塗佈方法可形成待加工形成為接著劑層20之接著劑膜20'與待加工形成為黏著劑層12之黏著劑層12'。 繼而，如圖3(c)所示，於黏著劑層12'上壓接基材11'而進行貼合。基材11'係待加工形成為上述基材11者。樹脂製基材11'可藉由壓延製膜法、有機溶劑中之流延法、密閉系統中之吹脹擠出法、T型模頭擠出法、共擠出法、乾式層壓法等製膜方法製作。視需要對製膜後之膜或基材11'實施特定之表面處理。於本步驟中，貼合溫度例如為30～50℃，較佳為35～45℃。貼合壓力(線壓)例如為0.1～20 kgf/cm，較佳為1～10 kgf/cm。藉由本步驟而獲得具有分隔件S、接著劑膜20'、黏著劑層12'及基材11'之積層構造之長條狀之積層片體。又，於黏著劑層12為如上所述之放射線硬化型黏著劑層之情形時，於與接著劑膜20'貼合後再對黏著劑層12'照射紫外線等放射線時，例如自基材11'側對黏著劑層12'進行紫外線等放射線之照射，該照射量例如為50～500 mJ/cm2 ，較佳為100～300 mJ/cm2 。該照射區域例如待形成為與接著劑層20密接之黏著劑層12的區域整體。 繼而，如圖3(d)所示，對於上述積層片體，實施將加工刀自基材11'之側起插入至分隔件S為止之加工(於圖3(d)中，以粗實線模式性地表示切斷部位)。例如一面使積層片體沿一方向F以一定速度移動，一面使以能夠繞與該方向F正交之軸心旋轉之方式配置且於輥表面安裝有衝壓加工用加工刀之附加工刀之旋轉輥(未圖示)的附加工刀之表面以特定之按壓力抵接於積層片體之基材11'側。藉此，一次加工形成切晶帶10(基材11、黏著劑層12)與接著劑層20，而於分隔件S上形成切晶黏晶膜X。此後，如圖3(e)所示，自分隔件S上去除切晶黏晶膜X周圍之材料積層部。 藉由如上方式可製造切晶黏晶膜X。 於半導體裝置之製造過程中，如上所述，存在為了獲得附接著劑層20之半導體晶片而實施使用切晶黏晶膜X進行之擴張步驟、即用以割斷之擴張步驟的情況，因此，於擴張步驟中，需適當地使割斷力作用於切晶黏晶膜X中之切晶帶10上之接著劑層20。如上所述，切晶黏晶膜X中之切晶帶10之黏著劑層12含有至少包含源自(甲基)丙烯酸月桂酯之單元與源自(甲基)丙烯酸2-羥基乙酯之單元的第1丙烯酸系聚合物。黏著劑層12中之丙烯酸系聚合物包含源自(甲基)丙烯酸月桂酯之單元之構成及包含源自(甲基)丙烯酸2-羥基乙酯之單元之構成均適於實現切晶帶10之黏著劑層12與其上之接著劑層20之間之較高之剪切接著力，因此，適於在擴張步驟中適當地使割斷力作用於在面內方向上受到擴張之切晶帶10上之接著劑層20以將其割斷。並且，如上所述，切晶黏晶膜X中之接著劑層20含有具有腈基之第2丙烯酸系聚合物。此種構成適於謀求接著劑層20之高彈性模數化，因此，有利於實現接著劑層20於割斷用擴張步驟中之良好割斷。 進而，於切晶黏晶膜X中，黏著劑層12中之第1丙烯酸系聚合物包含源自(甲基)丙烯酸月桂酯之單元且接著劑層20中之第2丙烯酸系聚合物具有腈基的構成有利於確保兩層間具有如上所述較高之剪切接著力，且有利於抑制在兩層間之積層方向上作用之結合性之相互作用。於藉由如上所述之積層塗佈方法積層形成黏著劑層12與接著劑層20之情形時，例如於該兩層間之積層方向上作用之結合性之相互作用容易變得過剩，但黏著劑層12之丙烯酸系聚合物包含源自(甲基)丙烯酸月桂酯之單元且接著劑層20之丙烯酸系聚合物具有腈基的構成適於確保兩層間之較高之剪切接著力並抑制於該兩層間之積層方向上作用之結合性之相互作用。進而，以使關於第2丙烯酸系聚合物之紅外線吸收光譜中之吸收波峰的上述比值成為0.01以上、較佳為0.015以上、更佳為0.02以上之方式設定第2丙烯酸系聚合物之腈基相對含量之上述構成適於在拾取步驟中容易地自黏著劑層12剝離或拾取附接著劑層20之半導體晶片。並且，以使關於第2丙烯酸系聚合物之紅外線吸收光譜中之吸收波峰的上述比值成為0.1以下、較佳為0.09以下、更佳為0.08以下之方式設定第2丙烯酸系聚合物之腈基相對含量之上述構成適於抑制擴張步驟中發生經割斷之附接著劑層20之半導體晶片自黏著劑層12局部地剝離即隆起之情況。 如上所述，切晶黏晶膜X適於實現切晶帶10上之接著劑層20於擴張步驟中之良好割斷，且適於實現附接著劑層20之半導體晶片於拾取步驟中之良好拾取。 切晶黏晶膜X可於膜面內方向上以實質相同之尺寸設計切晶帶10或其黏著劑層12與其上之接著劑層20，而使該接著劑層20不僅包含工件貼附用區域且包含框貼附用區域。具體而言，可採用如下設計：如上所述，於切晶黏晶膜X之面內方向上，接著劑層20之外周端20e與切晶帶10之基材11之外周端11e或黏著劑層12之外周端12e相距1000 μm以內、較佳為500 μm以內。此種切晶黏晶膜X適於藉由一衝壓加工等加工而一次地實施用以形成具有基材11與黏著劑層12之積層構造之一切晶帶10之加工、及用以形成一接著劑層20之加工。此種切晶黏晶膜X適於實現接著劑層20於擴張步驟中之良好割斷且適於實現附接著劑層20之半導體晶片於拾取步驟中之良好拾取，並且，就減少製造步驟數之觀點或控制製造成本之觀點等而言適於高效率地進行製造。 於切晶黏晶膜X中之黏著劑層12中之第1丙烯酸系聚合物中，源自(甲基)丙烯酸月桂酯之單元相對於源自(甲基)丙烯酸2-羥基乙酯之單元的莫耳比率如上所述較佳為1以上，更佳為3以上，更佳為5以上。此種構成適於確保切晶帶10之黏著劑層12與其上之接著劑層20層之間具有如上所述較高之剪切接著力，且適於抑制在兩層間之積層方向上作用之結合性之相互作用，因此，有利於實現拾取步驟中之良好拾取。又，該莫耳比率如上所述較佳為40以下，更佳為35以下，更佳為30以下。此種構成適於確保切晶帶10之黏著劑層12與接著劑層20之間之接著力或密接性，而適於抑制擴張步驟中發生附接著劑層20之半導體晶片自黏著劑層12局部地剝離即隆起之情況。 切晶黏晶膜X中之切晶帶10之黏著劑層12中之第1丙烯酸系聚合物較佳為作為放射線聚合性成分之含不飽和官能基之異氰酸酯化合物之加成物。於該情形時，黏著劑層12中之含不飽和官能基之異氰酸酯化合物相對於第1丙烯酸系聚合物之源自(甲基)丙烯酸2-羥基乙酯之單元的莫耳比率如上所述較佳為0.1以上，更佳為0.2以上，更佳為0.3以上。該等構成適於藉由第1丙烯酸系聚合物與含不飽和官能基之異氰酸酯化合物之反應而使黏著劑層12適度地硬化。於擴張步驟前預先使黏著劑層12硬化有利於接著劑層20於擴張步驟中之良好割斷。又，就減少硬化後之黏著劑層12中之低分子量成分之觀點而言，於用以形成加成有含不飽和官能基之異氰酸酯化合物之第1丙烯酸系聚合物的包含第1丙烯酸系聚合物與含不飽和官能基之異氰酸酯化合物之反應組合物中，第1丙烯酸系聚合物中之含不飽和官能基之異氰酸酯化合物相對於源自(甲基)丙烯酸2-羥基乙酯之單元的莫耳比率如上所述較佳為2以下，更佳為1.5以下，更佳為1.3以下。 於切晶黏晶膜X中，於切晶帶10之黏著劑層12為放射線硬化型之黏著劑層12之情形時，於溫度23℃及剝離速度300 mm/min之條件下之T型剝離試驗中，放射線硬化後之黏著劑層12與接著劑層20之間之剝離力如上所述較佳為0.04 N/20 mm以上，更佳為0.05 N/20 mm以上，更佳為0.08 N/20 mm以上。此種構成適於確保切晶帶10之黏著劑層12與其上之接著劑層20之間之接著力或密接性，而適於抑制擴張步驟中發生附接著劑層20之半導體晶片自黏著劑層12局部地剝離即隆起之情況。於溫度23℃及剝離速度300 mm/min之條件下之T型剝離試驗中，放射線硬化後之黏著劑層12與接著劑層20之間之剝離力如上所述較佳為0.3 N/20 mm以下，更佳為0.25 N/20 mm以下，更佳為0.22 N/20 mm以下。此種構成適於實現拾取步驟中之良好拾取。 圖4～圖9係表示本發明之一實施形態之半導體裝置製造方法。 於本半導體裝置製造方法中，首先，如圖4(a)及圖4(b)所示，於半導體晶圓W上形成分割槽30a(分割槽形成步驟)。半導體晶圓W具有第1面Wa及第2面Wb。於半導體晶圓W中之第1面Wa側已製作有各種半導體元件(未圖示)，且第1面Wa上已形成有該半導體元件所需之配線構造等(未圖示)。於本步驟中，將具有黏著面T1a之晶圓加工用帶T1貼合於半導體晶圓W之第2面Wb側後，於半導體晶圓W保持於晶圓加工用帶T1之狀態下，使用切晶裝置等之旋轉刀片於半導體晶圓W之第1面Wa側形成特定深度之分割槽30a。分割槽30a係用以將半導體晶圓W分離成半導體晶片單元之空隙(於圖4～圖6中，以粗實線模式性地表示分割槽30a)。 繼而，如圖4(c)所示，進行具有黏著面T2a之晶圓加工用帶T2向半導體晶圓W之第1面Wa側之貼合、與晶圓加工用帶T1自半導體晶圓W之剝離。 繼而，如圖4(d)所示，於半導體晶圓W保持於晶圓加工用帶T2之狀態下，藉由對半導體晶圓W自第2面Wb進行研削加工而使之薄化，直至成為特定厚度(晶圓薄化步驟)。研削加工可使用具備研削磨石之研削加工裝置進行。藉由該晶圓薄化步驟，於本實施形態中，形成能夠單片化成複數個半導體晶片31之半導體晶圓30A。半導體晶圓30A具體而言，該晶圓於第2面Wb側具有將待單片化成複數個半導體晶片31之部位加以連結之部位(連結部)。半導體晶圓30A中之連結部之厚度、即半導體晶圓30A之第2面Wb與分割槽30a之第2面Wb側末端之間的距離例如為1～30 μm，較佳為3～20 μm。 繼而，如圖5(a)所示，將保持於晶圓加工用帶T2之半導體晶圓30A貼合於切晶黏晶膜X之接著劑層20。此後，如圖5(b)所示，自半導體晶圓30A剝離晶圓加工用帶T2。於切晶黏晶膜X中之黏著劑層12為放射線硬化型黏著劑層之情形時，亦可於將半導體晶圓30A貼合於接著劑層20後再自基材11之側對黏著劑層12照射紫外線等放射線，以此代替切晶黏晶膜X之製造過程中之上述放射線照射。照射量例如為50～500 mJ/cm2 ，較佳為100～300 mJ/cm2 。切晶黏晶膜X中進行作為黏著劑層12之黏著力減弱措施之照射的區域(圖1所示之照射區域R)例如為黏著劑層12中之接著劑層20貼合區域內除其周緣部以外之區域。 繼而，於切晶黏晶膜X中之接著劑層20上貼附環狀框41後，如圖6(a)所示，將附帶半導體晶圓30A之該切晶黏晶膜X固定於擴張裝置之保持具42。 繼而，如圖6(b)所示，進行相對低溫之條件下之第1擴張步驟(冷擴張步驟)，而將半導體晶圓30A單片化成複數個半導體晶片31，且將切晶黏晶膜X之接著劑層20割斷成小片之接著劑層21，從而獲得附接著劑層之半導體晶片31。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43於切晶黏晶膜X之圖中下側抵接於切晶帶10並上升，使貼合有半導體晶圓30A之切晶黏晶膜X之切晶帶10以於包含半導體晶圓30A之徑方向及周方向之二維方向上受到拉伸之方式擴張。該擴張係於使切晶帶10產生15～32 MPa、較佳為20～32 MPa之範圍內之拉伸應力的條件下進行。冷擴張步驟中之溫度條件例如為0℃以下，較佳為-20～-5℃，更佳為-15～-5℃，更佳為-15℃。冷擴張步驟中之擴張速度(頂起構件43之上升速度)較佳為0.1～100 mm/sec。又，冷擴張步驟中之擴張量較佳為3～16 mm。 於本步驟中，半導體晶圓30A於較薄且易破裂之部位發生割斷而單片化成半導體晶片31。並且，於本步驟中，切晶帶10產生之拉伸應力於與受到擴張之切晶帶10之黏著劑層12密接之接著劑層20中，發揮於與各半導體晶片31密接之各區域中抑制變形之作用，另一方面，於與半導體晶片31間之分割槽對向之部位，未產生此種變形抑制作用。其結果，接著劑層20於與半導體晶片31間之分割槽對向之部位發生割斷。於本步驟之後，如圖6(c)所示，使頂起構件43下降而解除切晶帶10之擴張狀態。 繼而，如圖7(a)所示，進行相對高溫之條件下之第2擴張步驟，而將附接著劑層之半導體晶片31間之距離(間隔距離)擴寬。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43再次上升，而使切晶黏晶膜X之切晶帶10擴張。第2擴張步驟中之溫度條件例如為10℃以上，較佳為15～30℃。第2擴張步驟中之擴張速度(頂起構件43之上升速度)例如為0.1～10 mm/sec，較佳為0.3～1 mm/sec。又，第2擴張步驟中之擴張量例如為3～16 mm。於本步驟中，將附接著劑層之半導體晶片31之間隔距離擴寬至在下述拾取步驟中能夠適當地自切晶帶10拾取附接著劑層之半導體晶片31之程度。於本步驟之後，如圖7(b)所示，使頂起構件43下降而解除切晶帶10之擴張狀態。為了抑制切晶帶10上之附接著劑層之半導體晶片31之間隔距離於擴張狀態解除後縮小，較佳為於解除擴張狀態前，對切晶帶10中之較半導體晶片31保持區域而言外側之部分進行加熱而使之收縮。 繼而，視需要使用水等清洗液清洗附帶附接著劑層之半導體晶片31的切晶帶10中之半導體晶片31側，經過該清洗步驟後，如圖8所示，自切晶帶10拾取附接著劑層之半導體晶片31(拾取步驟)。例如於切晶帶10之圖中下側，使拾取機構之銷構件44上升而隔著切晶帶10將拾取對象之附接著劑層之半導體晶片31頂起後，利用吸附治具45進行吸附保持。於拾取步驟中，銷構件44之頂起速度例如為1～100 mm/sec，銷構件44之頂起量例如為50～3000 μm。 繼而，如圖9(a)所示，將所拾取之附接著劑層之半導體晶片31經由接著劑層21而暫時固定於特定之被黏著體51。作為被黏著體51，例如可列舉：引線框架、TAB(Tape Automated Bonding，捲帶式自動接合)膜、配線基板、及另外製作之半導體晶片。接著劑層21於暫時固定時在25℃下對被黏著體51之剪切接著力較佳為0.2 MPa以上，更佳為0.2～10 MPa。接著劑層21之該剪切接著力為0.2 MPa以上之構成適於抑制在下述打線接合步驟中因超音波振動或加熱導致接著劑層21與半導體晶片31或與被黏著體51之接著面處產生剪切變形之情況，而可適當地進行打線接合。又，接著劑層21於暫時固定時在175℃下對被黏著體51之剪切接著力較佳為0.01 MPa以上，更佳為0.01～5 MPa。 繼而，如圖9(b)所示，將半導體晶片31之電極墊(未圖示)與被黏著體51所具有之端子部(未圖示)經由接合線52而電性連接(打線接合步驟)。半導體晶片31之電極墊或被黏著體51之端子部與接合線52之接線係藉由伴隨加熱之超音波焊接而實現，且以不會使接著劑層21熱硬化之方式進行。作為接合線52，例如可使用金線、鋁線、或銅線。打線接合時之線加熱溫度例如為80～250℃，較佳為80～220℃。又，其加熱時間為數秒～數分鐘。 繼而，如圖9(c)所示，藉由用以保護被黏著體51上之半導體晶片31或接合線52之密封樹脂53而將半導體晶片31加以密封(密封步驟)。於本步驟中，接著劑層21進行熱硬化。於本步驟中，例如藉由使用模具進行之轉注成形技術形成密封樹脂53。作為密封樹脂53之構成材料，例如可使用環氧系樹脂。於本步驟中，用以形成密封樹脂53之加熱溫度例如為165～185℃，加熱時間例如為60秒～數分鐘。於本步驟(密封步驟)中密封樹脂53未充分硬化之情形時，於本步驟之後進行用以使密封樹脂53完全硬化之後硬化步驟。於密封步驟中接著劑層21未完全熱硬化之情形時，亦可於後硬化步驟中使接著劑層21與密封樹脂53一起實現完全之熱硬化。於後硬化步驟中，加熱溫度例如為165～185℃，加熱時間例如為0.5～8小時。 藉由如上方式可製造半導體裝置。 於本實施形態中，如上所述，將附接著劑層之半導體晶片31暫時固定於被黏著體51後，進行打線接合步驟而暫不使接著劑層21完全熱硬化。於本發明中，亦可代替此種構成，於將附接著劑層之半導體晶片31暫時固定於被黏著體51後，先使接著劑層21熱硬化再進行打線接合步驟。 於本發明之半導體裝置製造方法中，亦可進行圖10所示之晶圓薄化步驟代替參照圖4(d)之上述晶圓薄化步驟。參照圖4(c)經過上述過程後，於圖10所示之晶圓薄化步驟中，於半導體晶圓W保持於晶圓加工用帶T2之狀態下，藉由對該晶圓自第2面Wb進行研削加工而使之薄化，直至成為特定厚度，而形成包含複數個半導體晶片31且保持於晶圓加工用帶T2之半導體晶圓分割體30B。於本步驟中，可採用如下方法：研削晶圓直至分割槽30a其本身於第2面Wb側露出(第1方法)；亦可採用如下方法：自第2面Wb側研削晶圓直至即將到達分割槽30a，其後，藉由自旋轉磨石向晶圓之按壓力之作用使分割槽30a與第2面Wb之間產生裂痕而形成半導體晶圓分割體30B(第2方法)。根據所採用之方法，適當決定參照圖4(a)及圖4(b)如上所述般所形成之分割槽30a距離第1面Wa之深度。於圖10中，以粗實線模式性地表示經第1方法處理後之分割槽30a、或經第2方法處理後之分割槽30a及與其相連之裂痕。於本發明中，可使用藉由如上方式製作之半導體晶圓分割體30B代替半導體晶圓30A，將其貼合於切晶黏晶膜X後，參照圖5～圖9而進行上述各步驟。 圖11(a)及圖11(b)係表示於切晶黏晶膜X貼合半導體晶圓分割體30B後進行之第1擴張步驟(冷擴張步驟)。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43於切晶黏晶膜X之圖中下側抵接於切晶帶10並上升，使貼合有半導體晶圓分割體30B之切晶黏晶膜X之切晶帶10以於包含半導體晶圓分割體30B之徑方向及周方向之二維方向上受到拉伸之方式擴張。該擴張係於使切晶帶10產生例如5～28 MPa、較佳為8～25 MPa之範圍內之拉伸應力的條件下進行。本步驟中之溫度條件例如為0℃以下，較佳為-20～-5℃，更佳為-15～-5℃，更佳為-15℃。本步驟中之擴張速度(頂起構件43之上升速度)例如為1～400 mm/sec。又，本步驟中之擴張量例如為50～200 mm。藉由此冷擴張步驟，切晶黏晶膜X之接著劑層20割斷成小片之接著劑層21而獲得附接著劑層之半導體晶片31。具體而言，於本步驟中，切晶帶10產生之拉伸應力於與受到擴張之切晶帶10之黏著劑層12密接之接著劑層20中，發揮於與半導體晶圓分割體30B之各半導體晶片31密接之各區域中抑制變形之作用，另一方面，於與半導體晶片31間之分割槽30a對向之部位，未產生此種變形抑制作用。其結果，接著劑層20於與半導體晶片31間之分割槽30a對向之部位發生割斷。 於本發明之半導體裝置製造方法中，亦可將藉由如下方式製作之半導體晶圓30C貼合於切晶黏晶膜X，以代替將半導體晶圓30A或半導體晶圓分割體30B貼合於切晶黏晶膜X之上述構成。 如圖12(a)及圖12(b)所示，首先，於半導體晶圓W形成改質區域30b。半導體晶圓W具有第1面Wa及第2面Wb。於半導體晶圓W中之第1面Wa側已製作有各種半導體元件(未圖示)，且第1面Wa上已形成有該半導體元件所需之配線構造等(未圖示)。於本步驟中，將具有黏著面T3a之晶圓加工用帶T3貼合於半導體晶圓W之第1面Wa側後，於半導體晶圓W保持於晶圓加工用帶T3之狀態下，自晶圓加工用帶T3之相反側對半導體晶圓W沿其分割預定線向晶圓內部照射由聚光點聚集而成之雷射光，藉由利用多光子吸收之剝蝕而於半導體晶圓W內形成改質區域30b。改質區域30b係用以將半導體晶圓W分離成半導體晶片單元之脆弱化區域。關於藉由對半導體晶圓照射雷射光而於分割預定線上形成改質區域30b之方法，例如於日本專利特開2002-192370號公報中有詳細記述，本實施形態中之雷射光照射條件例如於以下條件範圍內適當調整。 ＜雷射光照射條件＞ (A)雷射光 雷射光源：半導體雷射激發Nd：YAG雷射 波長：1064 nm 雷射光點截面面積：3.14×10-8 cm2 振盪形態：Q開關脈衝 反覆頻率：100 kHz以下 脈衝寬度：1 μs以下 輸出：1 mJ以下 雷射光品質：TEM00 偏光特性：直線偏光 (B)聚光用透鏡 倍率：100倍以下 NA(numerical aperture，數值孔徑)：0.55 對雷射光波長之透過率：100%以下 (C)供載置半導體基板之載置台之移動速度：280 mm/sec以下 繼而，如圖12(c)所示，於半導體晶圓W保持於晶圓加工用帶T3之狀態下，藉由對半導體晶圓W自第2面Wb進行研削加工而使之薄化，直至成為特定厚度，藉此形成能夠單片化成複數個半導體晶片31之半導體晶圓30C(晶圓薄化步驟)。於本發明中，可使用藉由如上方式製作之半導體晶圓30C代替半導體晶圓30A，將其貼合於切晶黏晶膜X後，參照圖5～圖9而進行上述各步驟。 圖13(a)及圖13(b)係表示於切晶黏晶膜X貼合半導體晶圓30C後進行之第1擴張步驟(冷擴張步驟)。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43於切晶黏晶膜X之圖中下側抵接於切晶帶10並上升，使貼合有半導體晶圓30C之切晶黏晶膜X之切晶帶10以於包含半導體晶圓30C之徑方向及周方向之二維方向上受到拉伸之方式擴張。該擴張係於使切晶帶10產生例如5～28 MPa、較佳為8～25 MPa之範圍內之拉伸應力的條件下進行。本步驟中之溫度條件例如為0℃以下，較佳為-20～-5℃，更佳為-15～-5℃，更佳為-15℃。本步驟中之擴張速度(頂起構件43之上升速度)例如為1～400 mm/sec。又，本步驟中之擴張量例如為50～200 mm。藉由此冷擴張步驟，切晶黏晶膜X之接著劑層20割斷成小片之接著劑層21而獲得附接著劑層之半導體晶片31。具體而言，於本步驟中，使半導體晶圓30C於脆弱之改質區域30b形成裂痕而單片化成半導體晶片31。並且，於本步驟中，切晶帶10產生之拉伸應力於與受到擴張之切晶帶10之黏著劑層12密接之接著劑層20中，發揮於與半導體晶圓30C之各半導體晶片31密接之各區域中抑制變形之作用，另一方面，於與晶圓之裂痕形成部位對向之部位，未產生此種變形抑制作用。其結果，接著劑層20於與半導體晶片31間之裂痕形成部位對向之部位發生割斷。 又，於本發明中，切晶黏晶膜X如上所述可用於獲得附接著劑層之半導體晶片，亦可用於獲得積層複數個半導體晶片進行三維安裝之情形時之附接著劑層之半導體晶片。於此種三維安裝中之半導體晶片31間，可一併介存接著劑層21與間隔件，亦可不介存間隔件。 [實施例] [實施例1] 〈接著劑層〉 於甲基乙基酮中添加丙烯酸系聚合物A1 (丙烯酸乙酯、丙烯酸丁酯、丙烯腈、及甲基丙烯酸縮水甘油酯之共聚物，即上述第2丙烯酸系聚合物，重量平均分子量為120萬，玻璃轉移溫度為0℃，環氧值為0.4 eq/kg)54質量份、固態酚樹脂(商品名「MEHC-7851SS」，23℃下固態，明和化成股份有限公司製造)3質量份、液態酚樹脂(商品名「MEH-8000H」，23℃下液狀，明和化成股份有限公司製造)3質量份、及二氧化矽填料(商品名「SO-C2」，平均粒徑為0.5 μm，Admatechs股份有限公司製造)40質量份，加以混合，調整濃度以使室溫下之黏度成為700 mPa・s ，而獲得接著劑組合物。繼而，於具有經聚矽氧脫模處理之面之PET分隔件(厚度38 μm)之聚矽氧脫模處理面上，使用敷料器塗佈接著劑組合物而形成塗膜，對該塗膜於130℃下進行2分鐘之加熱乾燥。藉由如上方式於PET分隔件上製作實施例1中之厚度10 μm之接著劑層。將實施例1中之接著劑層之組成示於表1(於表1中，除下述關於MOI之數值以外，表示組合物之組成之各數值之單位係該組合物內之相對“質量份”)。 〈黏著劑層〉 於具備冷卻管、氮氣導入管、溫度計、及攪拌裝置之反應容器內，將包含丙烯酸月桂酯(LA)100莫耳份、丙烯酸2-羥基乙酯(2HEA)20莫耳份、相對於該等單體成分100質量份為0.2質量份之作為聚合起始劑之過氧化苯甲醯、及作為聚合溶劑之甲苯的混合物於氮氣環境中於60℃下攪拌10小時(聚合反應)。藉此，獲得含有丙烯酸系聚合物P1 之聚合物溶液。該聚合物溶液中之丙烯酸系聚合物P1 其重量平均分子量(Mw)為45萬，玻璃轉移溫度為9.5℃，源自LA之單元相對於源自2HEA之單元的莫耳比率為5。繼而，將包含該含有丙烯酸系聚合物P1 之聚合物溶液、異氰酸2-甲基丙烯醯氧基乙酯(MOI)、及作為加成反應觸媒之二月桂酸二丁基錫的混合物於室溫下於空氣環境中攪拌48小時(加成反應)。於該反應溶液中，MOI之調配量相對於上述丙烯酸月桂酯100莫耳份為16莫耳份，該MOI調配量相對於丙烯酸系聚合物P1 中之源自2HEA之單元或其羥基總量的莫耳比率為0.8。又，於該反應溶液中，二月桂酸二丁基錫之調配量相對於丙烯酸系聚合物P1 100質量份為0.01質量份。藉由該加成反應，獲得含有側鏈具有甲基丙烯酸酯基之丙烯酸系聚合物P2 (加成有含不飽和官能基之異氰酸酯化合物之上述第1丙烯酸系聚合物)之聚合物溶液。繼而，於該聚合物溶液中添加相對於丙烯酸系聚合物P2 100質量份為1質量份之多異氰酸酯化合物(商品名「Coronate L」，Tosoh股份有限公司製造)與2質量份之光聚合起始劑(商品名「Irgacure 127」，BASF公司製造)，加以混合，並對該混合物添加甲苯進行稀釋以使該混合物於室溫下之黏度成為500 mPa・s ，而獲得黏著劑溶液。繼而，使用敷料器，於形成於PET分隔件上之上述接著劑層上塗佈黏著劑溶液而形成塗膜，對該塗膜於130℃下進行2分鐘之加熱乾燥，而於接著劑層上形成厚度10 μm之黏著劑層。繼而，使用貼合機，於室溫下於該黏著劑層之露出面貼合乙烯-乙酸乙烯酯共聚物(EVA)製基材(商品名「RB-0104」，厚度130 μm，倉敷紡織股份有限公司製造)。繼而，進行將加工刀自EVA基材側插入至分隔件為止之衝壓加工。藉此，於分隔件上形成具有EVA基材/黏著劑層/接著劑層之積層構造之直徑370 mm之圓盤形狀之切晶黏晶膜。繼而，對切晶帶中之黏著劑層自EVA基材側照射紫外線。於照射紫外線時，使用高壓水銀燈，累計照射光量設為350 mJ/cm2 。藉由如上方式製作具有包含切晶帶(EVA基材/黏著劑層)與接著劑層之積層構造之實施例1之切晶黏晶膜。 [實施例2、3] 於形成黏著劑層時，將MOI之調配量由16莫耳份變為12莫耳份(實施例2)或8莫耳份(實施例3)，除此以外，藉由與實施例1之切晶黏晶膜相同之方式製作實施例2、3之各切晶黏晶膜。 [實施例4] 於形成接著劑層時，使用丙烯酸系聚合物A2 (商品名「Teisanresin SG-70L」，具有腈基之丙烯酸系共聚物，即上述第2丙烯酸系聚合物，重量平均分子量為90萬，玻璃轉移溫度為-13℃，羧酸值為5 mgKOH/g，Nagase chemteX股份有限公司製造)54質量份代替丙烯酸系聚合物A1 54質量份，且於形成黏著劑層時，將MOI之調配量由16莫耳份變為8莫耳份，除此以外，藉由與實施例1之切晶黏晶膜相同之方式製作實施例4之切晶黏晶膜。 [比較例1] 〈黏著劑層〉 於具備冷卻管、氮氣導入管、溫度計、及攪拌裝置之反應容器內，將包含丙烯酸2-乙基己酯(2EHA)100莫耳份、丙烯酸2-羥基乙酯(2HEA)20莫耳份、相對於該等單體成分100質量份為0.2質量份之作為聚合起始劑之過氧化苯甲醯、及作為聚合溶劑之甲苯的混合物於氮氣環境中於60℃下攪拌10小時(聚合反應)。藉此，獲得含有丙烯酸系聚合物P3 之聚合物溶液。該聚合物溶液中之丙烯酸系聚合物P3 其重量平均分子量(Mw)為40萬，玻璃轉移溫度為60℃。繼而，將包含該含有丙烯酸系聚合物P3 之聚合物溶液、異氰酸2-甲基丙烯醯氧基乙酯(MOI)、及作為加成反應觸媒之二月桂酸二丁基錫的混合物於室溫下於空氣環境中攪拌48小時(加成反應)。於該反應溶液中，MOI之調配量相對於上述丙烯酸2-乙基己酯100莫耳份為20莫耳份。又，於該反應溶液中，二月桂酸二丁基錫之調配量相對於丙烯酸系聚合物P3 100質量份為0.01質量份。藉由該加成反應，獲得含有側鏈具有甲基丙烯酸酯基之丙烯酸系聚合物P4 之聚合物溶液。繼而，於該聚合物溶液中添加相對於丙烯酸系聚合物P4 100質量份為1質量份之多異氰酸酯化合物(商品名「Coronate L」，Tosoh股份有限公司製造)與2質量份之光聚合起始劑(商品名「Irgacure 127」，BASF公司製造)，加以混合，並對該混合物添加甲苯進行稀釋以使該混合物於室溫下之黏度成為500 mPa・s，而獲得黏著劑溶液。於在接著劑層上形成黏著劑層時，使用該黏著劑溶液，除此以外，藉由與實施例1之切晶黏晶膜相同之方式製作比較例1之切晶黏晶膜。 [比較例2] 於形成接著劑層時，使用丙烯酸系聚合物A3 (商品名「Paracron W-116.3」，包含源自丙烯酸乙酯之單體單元之丙烯酸酯系聚合物，重量平均分子量為90萬，玻璃轉移溫度為-22℃，羧酸值為7.8 mgKOH/g，羥值為1.1 mgKOH/g，根上工業股份有限公司製造)54質量份代替丙烯酸系聚合物A1 54質量份，除此以外，藉由與實施例1之切晶黏晶膜相同之方式製作比較例2之切晶黏晶膜。 〈紅外線吸收光譜〉 針對丙烯酸系聚合物A1 、A2 、A3 ，分別使用紅外分光分析裝置(商品名「FT/IR-230」，日本分光股份有限公司製造)測定紅外線吸收光譜，求出所獲得之紅外線吸收光譜中之1730 cm-1 附近之第1波峰高度與2240 cm-1 附近之第2波峰高度，並算出第2波峰高度相對於第1波峰高度的比值。將該值示於表1。1730 cm-1 附近之第1波峰係屬於C=O伸縮振動之吸收峰。該第1波峰高度係作為於將所獲得之紅外線吸收光譜上通過點1670 cm-1 與點1860 cm-1 之直線設為基線時，於該紅外線吸收光譜中自1670 cm-1 至1860 cm-1 之範圍內之極大值(1730 cm-1 附近僅存在1個)相對於基線的值(具體而言為吸光度之差)而求出。2240 cm-1 附近之第2波峰係屬於C≡N伸縮振動之吸收峰。該第2波峰高度係作為於將同一紅外線吸收光譜上通過點2220 cm-1 與點2270 cm-1 之直線設為基線時，於該紅外線吸收光譜中自2220 cm-1 至2270 cm-1 之範圍內之極大值(2240 cm-1 附近附近僅存在1個)相對於基線的值(具體而言為吸光度之差)而求出。 〈T型剝離試驗〉 針對實施例1～4及比較例1、2之各切晶黏晶膜，藉由如下方式測定黏著劑層與接著劑層之間之剝離力。首先，由各切晶黏晶膜製作試驗片。具體而言，自切晶黏晶膜中之基材側對黏著劑層照射350 mJ/cm2 之紫外線使黏著劑層硬化後，於切晶黏晶膜之接著劑層側貼合襯底膠帶(商品名「BT-315」，日東電工股份有限公司製造)，自該附帶襯底膠帶之切晶黏晶膜切出寬度50 mm×長度120 mm之尺寸之試驗片。進而，使用拉伸試驗機(商品名「Autograph AGS-J」，島津製作所股份有限公司製造)，對試驗片進行T型剝離試驗，測定剝離力(N/20 mm)。於本測定中，溫度條件設為23℃，剝離速度設為300 mm/min。將測定結果示於表1。 〈擴張步驟與拾取步驟之實施〉 使用實施例1～4及比較例1、2之各切晶黏晶膜，進行如下之貼合步驟、用以割斷之第1擴張步驟(冷擴張步驟)、用以間隔之第2擴張步驟(常溫擴張步驟)、及拾取步驟。 於貼合步驟中，將保持於晶圓加工用帶(商品名「UB-3083D」，日東電工股份有限公司製造)之半導體晶圓分割體貼合於切晶黏晶膜之接著劑層，其後，自半導體晶圓分割體剝離晶圓加工用帶。於貼合時，使用貼合機，貼合速度設為10 mm/sec，溫度條件設為60℃，壓力條件設為0.15 MPa。又，半導體晶圓分割體係藉由如下方式形成而準備。首先，針對處於與環狀框一起保持於晶圓加工用帶(商品名「V12S-R2-P」，日東電工股份有限公司製造)之狀態的裸晶圓(直徑12英吋，厚度780 μm，東京化工股份有限公司製造)，於其一面之側，使用切晶裝置(商品名「DFD6260」，Disco股份有限公司製造)，利用其旋轉刀片形成單片化用之分割槽(寬度25 μm，深度50 μm，一區塊呈6 mm×12 mm之格子狀)。繼而，於分割槽形成面貼合晶圓加工用帶(商品名「UB-3083D」，日東電工股份有限公司製造)後，將上述晶圓加工用帶(商品名「V12S-R2-P」)自晶圓剝離。此後，使用背面研磨裝置(商品名「DGP8760」，Disco股份有限公司製造)，自晶圓之另一面(未形成分割槽之面)之側進行研削，藉此將該晶圓薄化至厚度20 μm，繼而，使用同一裝置進行乾式拋光，藉此對該研削面實施鏡面拋光。藉由如上方式形成半導體晶圓分割體(處於保持於晶圓加工用帶之狀態)。該半導體晶圓分割體中包含複數個半導體晶片(6 mm×12 mm)。 冷擴張步驟係使用晶片隔離裝置(商品名「Die Separator DDS3200」，Disco股份有限公司製造)，藉由其冷擴張單元進行。具體而言，首先，於室溫下，於附帶半導體晶圓分割體之上述切晶黏晶膜中之接著劑層之框貼附用區域(工件貼附用區域之周圍)貼附直徑12英吋之SUS製環狀框(Disco股份有限公司製造)。繼而，將該切晶黏晶膜安裝於裝置內，藉由同一裝置之冷擴張單元對附帶半導體晶圓分割體之切晶黏晶膜之切晶帶進行擴張。於該冷擴張步驟中，溫度為-15℃，擴張速度為100 mm/sec，擴張量為7 mm。 常溫擴張步驟係使用晶片隔離裝置(商品名「Die Separator DDS3200」，Disco股份有限公司製造)，藉由其常溫擴張單元進行。具體而言，藉由同一裝置之常溫擴張單元對經過上述冷擴張步驟之附帶半導體晶圓分割體之切晶黏晶膜之切晶帶進行擴張。於該常溫擴張步驟中，溫度為23℃，擴張速度為1 mm/sec，擴張量為10 mm。此後，對經過常溫擴張之切晶黏晶膜實施加熱收縮處理。該處理溫度為200℃，處理時間為20秒。 於拾取步驟中，使用具有拾取機構之裝置(商品名「Die Bonder SPA-300」，新川股份有限公司製造)，嘗試於切晶帶上拾取に經單片化之附接著劑層之半導體晶片。關於該拾取，銷構件之頂起速度為1 mm/sec，頂起量為2000 μm，拾取評價數為5個。 於使用實施例1～4及比較例1、2之各切晶黏晶膜進行之如上所述之過程中，關於冷擴張步驟，於附接著劑層之半導體晶片未自切晶帶隆起之情形時，將割斷時之隆起評價為良(○)，關於拾取步驟，於5個附接著劑層之半導體晶片全部自切晶帶成功拾取之情形時，將拾取性評價為良(○)，於非如此之情形時，將拾取性評價為不良(×)。將該等評價結果示於表1。 [評價] 根據實施例1～4之切晶黏晶膜，於冷擴張步驟中，可良好地割斷接著劑層而不會發生附接著劑層之半導體晶片自切晶帶隆起之情況，並且，於拾取步驟中，可適當地拾取附接著劑層之半導體晶片。 [表1] FIG. 1 is a schematic cross-sectional view of a cut die-bond film X according to an embodiment of the present invention. The die-cut die-bond film X has a laminated structure including a die-cut band 10 and an adhesive layer 20. The dicing tape 10 has a laminated structure including a substrate 11 and an adhesive layer 12. The adhesive layer 20 is peelably adhered to the adhesive layer 12 or the adhesive surface 12 a of the dicing tape 10. The dicing die-bonding film X can be used in the process of obtaining a semiconductor wafer with an adhesive layer during the manufacturing of a semiconductor device, for example, the following expansion step, and has a disk shape corresponding to a workpiece such as a semiconductor wafer. The diameter of the die-cut die-bond film X is, for example, in the range of 345 to 380 mm (for 12-inch wafers), 245 to 280 mm (for 8-inch wafers), and 195 to 230 mm. (For 6-inch wafers) or 495 to 530 mm (for 18-inch wafers). The substrate 11 of the dicing tape 10 is an element that functions as a support in the dicing tape 10 or the dicing die-bond film X. As the substrate 11, a plastic substrate such as a plastic film can be preferably used. Examples of the constituent material of the plastic substrate include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, Polyetherimide, polyimide, fully aromatic polyimide, polyphenylene sulfide, aromatic polyimide, fluororesin, cellulose resin, and silicone resin. Examples of the polyolefin include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, and block copolymer polypropylene. , Homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionic polymer resin, ethylene- (meth) acrylic copolymer, ethylene- (meth) acrylate copolymer Polymers, ethylene-butene copolymers, and ethylene-hexene copolymers. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The substrate 11 may include one material, or may include two or more materials. The base material 11 may have a single-layer structure or a multilayer structure. From the viewpoint of ensuring that the substrate 11 has good heat shrinkability in order to use the local thermal shrinkage of the dicing tape 10 or the substrate 11 to maintain the wafer separation distance achieved by the following expansion step, the substrate 11 preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the substrate 11 refers to a component that occupies the largest mass ratio among the constituent components. When the substrate 11 includes a plastic film, the substrate 11 may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film. When the adhesive layer 12 on the base material 11 is a UV-curable type as described below, the base material 11 is preferably UV-transparent. When using the cut crystal sticky film X, for example, when the cut crystal band 10 or the substrate 11 is shrunk by local heating, for example, when the cut crystal tape 10 or the substrate 11 is partially shrunk, it is maintained by In the case of the distance between the wafers achieved by the step of expanding by the interval, the base material 11 is preferably heat-shrinkable. When the substrate 11 includes a plastic film, the substrate 11 is preferably a biaxially stretched film in terms of achieving the isotropic thermal shrinkage of the dicing tape 10 or the substrate 11. The heat shrinkage rate in the heat treatment test of the cut crystal strip 10 or the substrate 11 under the conditions of a heating temperature of 100 ° C. and a heat treatment time of 60 seconds is preferably 1 to 30%, more preferably 2 to 25%, and more preferably It is 3 to 20%, and more preferably 5 to 20%. The thermal shrinkage rate refers to a thermal shrinkage rate in at least one of a thermal shrinkage rate in a so-called MD direction and a thermal shrinkage rate in a so-called TD direction. The surface on the side of the adhesive layer 12 in the base material 11 may also be subjected to a physical treatment, a chemical treatment, or a primer treatment to improve the adhesion with the adhesive layer 12. Examples of the physical treatment include a corona treatment, a plasma treatment, a sandblasting treatment, an ozone exposure treatment, a flame exposure treatment, a high-voltage electric shock exposure treatment, and an ionizing radiation treatment. Examples of the chemical treatment include a chromic acid treatment. The treatment for improving the adhesion is preferably performed on the entire surface of the adhesive layer 12 side in the substrate 11. From the viewpoint of ensuring the strength required for the base material 11 to function as a support in the cut crystal band 10 or the cut crystal adhesive film X, the thickness of the base material 11 is preferably 40 μm or more, and more preferably 50 μm or more. , More preferably 55 μm or more, and even more preferably 60 μm or more. In addition, from the viewpoint of achieving moderate flexibility in the dicing tape 10 or the dicing die-bonding film X, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, and even more preferably 150 μm. the following. The adhesive layer 12 of the dicing tape 10 contains an acrylic polymer containing at least a monomer unit derived from lauryl (meth) acrylate and a monomer unit derived from 2-hydroxyethyl (meth) acrylate (No. 1 Acrylic polymer) as the base polymer. The first acrylic polymer is an acrylic copolymer containing at least lauryl (meth) acrylate and 2-hydroxyethyl (meth) acrylate as constituent monomers. In the first acrylic polymer, the molar ratio of the unit derived from lauryl (meth) acrylate to the unit derived from 2-hydroxyethyl (meth) acrylate is preferably 1 or more, more preferably 3 or more, more preferably 5 or more. The molar ratio is preferably 40 or less, more preferably 35 or less, and even more preferably 30 or less. In the present embodiment, "(meth) acrylate" means "acrylate" and / or "methacrylate". The first acrylic polymer preferably contains monomer units derived from acrylate and / or methacrylate as monomer units having the largest mass ratio. As described above, at least the monomer units derived from lauryl (meth) acrylate are included. Monomer units and monomer units derived from 2-hydroxyethyl (meth) acrylate. Examples of the (meth) acrylate used as a monomer unit for forming the first acrylic polymer include alkyl (meth) acrylate, cycloalkyl (meth) acrylate, and aromatic (meth) acrylate. (Meth) acrylates containing hydrocarbon groups such as alkyl esters. Examples of the alkyl (meth) acrylate other than lauryl (meth) acrylate include methyl (meth) acrylate, ethyl, propyl, isopropyl, butyl, isobutyl, and Dibutyl, tert-butyl, pentyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl Esters, tridecyl esters, tetradecyl esters, cetyl esters, octadecyl esters, and eicosyl esters. Examples of the cycloalkyl (meth) acrylate include cyclopentyl and cyclohexyl (meth) acrylic acid. Examples of the aryl (meth) acrylate include phenyl (meth) acrylate and benzyl (meth) acrylate. As the (meth) acrylate used to form the first acrylic polymer, only lauryl (meth) acrylate may be used, or one or two or more (meth) acrylates may be used together with lauryl (meth) acrylate. )Acrylate. The (meth) acrylic acid ester of all the monomer components used to form the first acrylic polymer is suitable for the adhesive layer 12 to appropriately exhibit basic characteristics derived from the adhesion properties of the (meth) acrylic acid ester. The ratio is preferably 40% by mass or more, and more preferably 60% by mass or more. In order to improve the cohesive force, heat resistance, etc., the first acrylic polymer may include a unit derived from 2-hydroxyethyl (meth) acrylate in addition to a unit derived from a copolymer with (meth) acrylate. Monomer units of other monomers polymerized. Examples of such monomer components include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphate group-containing monomer, Functional monomers such as acrylamide and acrylonitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, and fumaric acid. , And butenoic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer other than 2-hydroxyethyl (meth) acrylate include 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and (meth) acrylic acid. 6-hydroxyhexyl ester, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethyl) (meth) acrylate Cyclohexyl) methyl ester. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, and (meth) acrylamidopropyl Sulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloxynaphthalenesulfonic acid. Examples of the phosphate group-containing monomer include 2-hydroxyethyl acrylamidophosphate. As the other monomer for forming the first acrylic polymer, one kind of monomer may be used, or two or more kinds of monomers may be used. In terms of allowing the adhesive layer 12 to appropriately exhibit basic properties derived from the (meth) acrylate-derived adhesiveness, the other monomer components among all the monomer components used to form the first acrylic polymer are The ratio is preferably 60% by mass or less, and more preferably 40% by mass or less. The first acrylic polymer may include a monomer unit derived from a polyfunctional monomer that can be copolymerized with a monomer component such as a (meth) acrylate in order to form a crosslinked structure in its polymer skeleton. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, Neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (methyl) Acrylates, epoxy (meth) acrylates (ie, poly (meth) acrylate glycidyl), polyester (meth) acrylates, and (meth) acrylate urethanes. As the polyfunctional monomer for forming the first acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. In terms of allowing the adhesive layer 12 to appropriately exhibit basic properties derived from the (meth) acrylate-derived tackiness, the polyfunctional monomer of all monomer components used to form the first acrylic polymer is The ratio is preferably 40% by mass or less, and more preferably 30% by mass or less. The first acrylic polymer can be obtained by polymerizing a raw material monomer for forming the first acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. From the viewpoint of a high degree of cleanliness in a semiconductor device manufacturing method using the cut crystal band 10 or the cut crystal sticky film X, the low molecular weight in the adhesive layer 12 in the cut crystal band 10 or the cut crystal sticky film X The number of substances is preferably small. Therefore, the number average molecular weight of the first acrylic polymer is preferably 100,000 or more, and more preferably 200,000 to 3 million. In order to increase the number average molecular weight of the first acrylic polymer as the base polymer, the adhesive layer 12 or the adhesive used to form it may contain, for example, an external crosslinking agent. Examples of the external crosslinking agent for reacting with the first acrylic polymer to form a crosslinking structure include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol compounds, etc.), aziridine compounds, and Melamine-based crosslinking agent. The content of the external cross-linking agent in the adhesive layer 12 or the adhesive used to form it is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer. The adhesive used to form such an adhesive layer 12 may be composed of an adhesive (adhesion-reducing adhesive) capable of deliberately weakening the adhesive force by an external action such as radiation or heating, or the adhesive force may be almost used. Or the composition of an adhesive (non-reduced adhesive) that does not weaken at all due to external effects. What kind of configuration can be appropriately selected according to the singulation method or conditions of the semiconductor wafer that is singulated using the dicing die-bond film X. In the case of using an adhesion-reducing adhesive as the adhesive in the adhesive layer 12, the adhesive layer 12 can be flexibly used to show relatively high adhesion during the manufacturing process or use of the cut crystal adhesive film X. The state of force and the state showing relatively low adhesion. For example, when the die-cut adhesive film X is used in a specific wafer dicing step, the state where the adhesive layer 12 exhibits a relatively high adhesive force can be used to suppress and prevent the adhesive layer 20 from rising from the adhesive layer 12. Or peeling, on the other hand, in a subsequent picking-up step of picking up a semiconductor wafer with an adhesive layer from the dicing tape 10 of the dicing die-bonding film X, by weakening the adhesive force of the adhesive layer 12, it is possible to The semiconductor wafer to which the adhesive layer is attached is appropriately picked up from the adhesive layer 12. As the radiation-hardening type adhesive for forming the adhesive layer 12, for example, a type of adhesive that is hardened by irradiation with electron beam, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used, and can be particularly preferably used. A type of adhesive (ultraviolet-curable adhesive) that is hardened by irradiating ultraviolet rays. Examples of the radiation-curable adhesive in the adhesive layer 12 include, in addition to the first acrylic polymer described above, a radiation polymerizable monomer component containing an unsaturated functional group such as a radiation polymerizable carbon-carbon double bond or the like. Radiation hardening adhesive with additive type of oligomer component. Examples of the radiation polymerizable monomer component used to form the radiation-curable adhesive include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (methyl). Acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-polymerizable oligomer component used to form the radiation-curable adhesive include various types such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The oligomer is preferably one having a molecular weight of about 100 to 30,000. The total content of the radiation-polymerizable monomer component or oligomer component in the radiation-curable adhesive is determined within a range capable of appropriately weakening the adhesive force of the formed adhesive layer 12, compared to the basis of acrylic polymers and the like 100 parts by mass of the polymer is, for example, 5 to 500 parts by mass, and preferably 40 to 150 parts by mass. In addition, as the additive type radiation-curable adhesive, those disclosed in, for example, Japanese Patent Laid-Open No. 60-196956 can be used. Examples of the radiation-hardening adhesive in the adhesive layer 12 include unsaturated functionalities such as contained in the polymer side chain, or in the polymer main chain, and having polymerizable carbon-carbon double bonds at the ends of the polymer main chain. Radiation-hardening type adhesive based on the first acrylic polymer of the base. Such an internal radiation-hardening type adhesive is suitable for suppressing the change in the adhesion characteristics over time due to the movement of the low-molecular-weight component in the formed adhesive layer 12 instead of intention. Examples of a method for introducing a radiation polymerizable carbon-carbon double bond into the first acrylic polymer include a method in which a raw material monomer containing a monomer having a specific functional group (first functional group) is copolymerized to obtain After the first acrylic polymer, the first acrylic polymer and a specific functional group capable of reacting with the first functional group and being bonded are maintained while maintaining the radiation polymerizability of the carbon-carbon double bond ( The second functional group) and the radiation-polymerizable carbon-carbon double bond compound undergo a condensation reaction or an addition reaction. The first acrylic polymer has at least a hydroxyl group derived from 2-hydroxyethyl (meth) acrylate as the first functional group. Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridinyl group, an aziridinyl group and a carboxyl group, a hydroxyl group and an isocyanate group, Isocyanate and hydroxyl. Among these combinations, a combination of a hydroxyl group and an isocyanate group or a combination of an isocyanate group and a hydroxyl group is preferable from the viewpoint of facilitating reaction tracking. In addition, it is technically difficult to produce a polymer having a highly reactive isocyanate group. On the other hand, from the standpoint of ease of production or availability of the first acrylic polymer, it is more preferably the first acrylic polymer. 1 In the case where the first functional group on the acrylic polymer side is a hydroxyl group and the second functional group is an isocyanate group. In this case, examples of the isocyanate compound having both a radiation polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, a radiation polymerizable isocyanate compound containing an unsaturated functional group include the following: Methacrylfluorenyl isocyanate, 2-methacryloxyethyl isocyanate (MOI), and iso-isopropenyl-α, α-dimethylbenzyl isocyanate. When an isocyanate compound containing an unsaturated functional group is introduced or added to the first acrylic polymer, the unsaturated functional group-containing isocyanate compound in the first acrylic polymer is derived from (meth) acrylic acid The molar ratio of the unit of 2-hydroxyethyl ester is preferably 0.1 or more, more preferably 0.2 or more, and even more preferably 0.3 or more. The acrylic polymer containing the first functional group is preferably one containing monomer units derived from the above-mentioned hydroxyl-containing monomer, and also preferably containing 2-hydroxyethyl vinyl ether or 4-hydroxybutyl. Monomer units of ether compounds such as vinyl vinyl ether and diethylene glycol monovinyl ether. The radiation-curable adhesive in the adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-keto alcohol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, and dibenzene Ketone compounds, 9-oxosulfur Compounds, camphorquinone, haloketone, fluorenylphosphine oxide, and fluorenyl phosphate. Examples of the α-keto alcohol-based compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylphenethyl Ketones, 2-methyl-2-hydroxyphenylacetone, and 1-hydroxycyclohexylphenyl ketone. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, and 2,2-diethoxybenzene. Ethyl ketone and 2-methyl-1- [4- (methylthio) -phenyl] -2-olinylpropane-1. Examples of the benzoin ether-based compound include benzoin diethyl ether, benzoin isopropyl ether, and anisole methyl ether. Examples of the ketal-based compound include benzophenone dimethyl ketal. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime-based compound include 1-benzophenone-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone-based compound include benzophenone, benzophenone benzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. As 9-oxysulfur Examples of compounds are 9-oxysulfur , 2-chloro9-oxysulfur 2-methyl 9-oxysulfur 2,4-dimethyl 9-oxosulfur Isopropyl 9-oxysulfur , 2,4-dichloro 9-oxysulfur , 2,4-diethyl 9-oxysulfur , And 2,4-diisopropyl 9-oxysulfur . The content of the photopolymerization initiator in the radiation-curable adhesive in the adhesive layer 12 is, for example, 0.05 to 20 parts by mass based on 100 parts by mass of the base polymer such as an acrylic polymer. Examples of the non-reduced adhesive force include pressure-sensitive adhesives. The pressure-sensitive adhesive includes an adhesive that hardens the radiation-hardening adhesive described above with respect to the adhesion-weakening adhesive by irradiating radiation in advance, but still secures a specific form of adhesion. Radiation-curable adhesives (radiation-curable adhesives) that have been hardened by irradiation of radiation in advance (radiation-curable adhesives that have been irradiated with radiation) Even if the adhesion is weakened due to radiation, the content of the polymer component can still be expressed Due to the adhesiveness of the polymer component, it can exert an adhesive force that can be used for adhesively maintaining an adherend in a crystal cutting step or the like. In the adhesive layer 12 of this embodiment, one type of non-reduced adhesive may be used, or two or more types of non-reduced adhesive may be used. In addition, the entire adhesive layer 12 may be formed of a non-reduced adhesive force, and the adhesive layer 12 may also be partially formed of a non-reduced adhesive force. On the other hand, as the pressure-sensitive adhesive other than the radiation-curable adhesive in the adhesive layer 12, an acrylic based on the first acrylic polymer as the base polymer can be preferably used. Adhesive. The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for constituting the pressure-sensitive adhesive layer 12 may contain, in addition to the above-mentioned components, a cross-linking accelerator, an adhesion-imparting agent, an anti-aging agent, a colorant such as a pigment, or a dye. The colorant may be a compound that is colored by radiation. Examples of such compounds include leuco dyes. The thickness of the adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 25 μm. Such a structure is suitable for obtaining the balance of the adhesion force of the adhesive layer 12 to the adhesive layer 20 before and after the radiation curing when the adhesive layer 12 contains a radiation-hardening adhesive. The adhesive layer 20 of the die-cutting die-bonding film X has both a function as an adhesive for die-sticking which exhibits thermosetting properties, and an adhesive function for holding a workpiece such as a semiconductor wafer and a frame member such as a ring frame. The adhesive / adhesive for constituting the adhesive layer 20 may have a composition containing a thermosetting resin and, for example, a thermoplastic resin as an adhesive component, or may have a thermosetting function having a bond capable of reacting with the hardener to form a bond. Composition of base thermoplastic resin. When the adhesive / adhesive for constituting the adhesive layer 20 has a composition containing a thermoplastic resin having a thermosetting functional group, the adhesive / adhesive need not further include a thermosetting resin (epoxy resin or the like). The adhesive layer 20 contains at least an acrylic polymer (second acrylic polymer) having a nitrile group as the thermoplastic resin. The second acrylic polymer contained in the adhesive layer 20 preferably contains a monomer unit derived from a (meth) acrylic acid ester as the monomer unit having the largest mass ratio. As such a (meth) acrylate, for example, the same as the (meth) acrylate described in the first acrylic polymer for forming the adhesive layer 12 can be used. The second acrylic polymer contains a monomer unit derived from a nitrile group-containing monomer. Examples of the nitrile group-containing monomer include acrylonitrile, methacrylonitrile, and cyanostyrene. In addition, the second acrylic polymer may include a monomer unit derived from another monomer that can be copolymerized with a (meth) acrylate in addition to the monomer unit derived from a nitrile group-containing monomer. Examples of such other monomer components include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, and a phosphate group-containing monomer. Functional group-containing monomers, such as acrylamide, or various polyfunctional monomers. Specifically, it can be used in combination with (methyl) described in the first acrylic polymer for forming the adhesive layer 12 described above. ) The other monomers copolymerized with acrylate are the same. In the infrared absorption spectrum of the second acrylic polymer having a nitrile group, 2240 cm derived from the nitrile group -1 The height of nearby peaks (belonging to the absorption peak of C≡N stretching vibration) is relative to the 1,730 cm originating from the carbonyl group -1 The ratio of the height of nearby peaks (belonging to the absorption peak of C = O stretching vibration) is 0.01 or more, preferably 0.015 or more, more preferably 0.02 or more, and 0.1 or less, preferably 0.09 or less, and more preferably 0.08 or less . That is, the relative content of the nitrile group of the second acrylic polymer is set to such an extent that the above ratio falls within such a range. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, saturated polyester resin such as PET or PBT, polyamide resin Amine resin and fluororesin. In forming the adhesive layer 20, one type of thermoplastic resin may be used, or two or more types of thermoplastic resins may be used. In addition, from the viewpoint of simultaneously realizing the adhesion of the adhesive layer 20 to the ring frame described below at room temperature and its vicinity and preventing residues at the time of peeling, the adhesive layer 20 preferably includes a glass transition temperature. A polymer at -10 to 10 ° C is used as a main component of the thermoplastic resin. The main component of a thermoplastic resin refers to a resin component which accounts for the largest mass ratio among the thermoplastic resin components. As for the glass transition temperature of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox equation can be used. The relationship between the glass transition temperature Tg of the Fox-type polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer in the polymer. In the following Fox formula, Tg is the glass transition temperature (° C) of the polymer, Wi is the weight fraction of monomer i constituting the polymer, and Tgi is the glass transition temperature (° C) of the homopolymer of monomer i . The glass transition temperature of the homopolymer can be based on literature values, such as in "Introduction to the New Polymer Library 7 Introduction to Synthetic Resins for Coatings" (Mitsuka Kitaoka, Polymer Society, 1995) or "Acrylic Ester Catalog (1997 Edition)" ( Mitsubishi Rayon Co., Ltd.) lists the glass transition temperatures of various homopolymers. On the other hand, the glass transition temperature of the monomer homopolymer can also be determined by a method specifically described in Japanese Patent Laid-Open No. 2007-51271. Fox formula: 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)] When the adhesive layer 20 contains both a thermoplastic resin and a thermosetting resin, examples of the thermosetting resin include epoxy resin, Phenol resin, amine resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyfluorene resin. When constituting the adhesive layer 20, one type of thermosetting resin may be used, or two or more types of thermosetting resin may be used. As the thermosetting resin contained in the adhesive layer 20, an epoxy resin is preferable because the content of the ionic impurities and the like which may cause corrosion of the semiconductor wafer of the sticky crystal target tends to be small. Moreover, as a hardener of an epoxy resin, a phenol resin is preferable. Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and fluorene. Type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, isocyanuric acid triglycidyl type, and glycidylamine type ring Oxygen resin. As the epoxy resin contained in the adhesive layer 20, in terms of sufficient reactivity with a phenol resin as a hardener and excellent heat resistance, a novolak type epoxy resin, a biphenyl type epoxy resin, Trihydroxyphenylmethane type epoxy resin, and tetraphenol ethane type epoxy resin. Examples of the phenol resin capable of functioning as an epoxy resin hardener include novolac-type phenol resins, soluble phenol-type phenol resins, and polyhydroxystyrenes such as polyparahydroxystyrene. Examples of the novolac-type phenol resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolac resin, a third butyl novolac resin, and a nonylphenol novolac resin. As the phenol resin that can function as an epoxy resin hardener, one kind of phenol resin may be used, or two or more kinds of phenol resins may be used. When a phenol novolak resin or a phenol aralkyl resin is used as a hardener of an epoxy resin for a sticky crystal adhesive, there is a tendency that the connection reliability of the adhesive can be improved. The hardener containing the epoxy resin is preferred. In the adhesive layer 20, from the viewpoint of sufficiently progressing the curing reaction between the epoxy resin and the phenol resin, it is preferable that the hydroxyl group in the phenol resin is 1 equivalent to the epoxy group in the epoxy resin component. The phenol resin is contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents. From the viewpoint that the adhesive layer 20 appropriately exhibits its function as a thermosetting adhesive, the content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, and more preferably 10 to 50. quality%. When the adhesive layer 20 contains the above-mentioned second acrylic polymer containing a thermosetting functional group, examples of the thermosetting functional group include an epoxy group or a glycidyl group, a carboxyl group, a hydroxyl group, and an isopropyl group. Cyano. Among these, an epoxy group and a carboxyl group can be preferably used. That is, as the second acrylic polymer containing a thermosetting functional group, a second acrylic polymer containing an epoxy group and / or a carboxyl group can be preferably used. As the curing agent of the second acrylic polymer containing a thermosetting functional group, for example, the above-mentioned external crosslinking agent that may be a component of the adhesive for forming the adhesive layer 12 can be used. When the thermosetting functional group in the second acrylic polymer containing a thermosetting functional group is an epoxy group, a polyphenol-based compound can be preferably used as the curing agent. For example, the above-mentioned various phenol resins can be used. The epoxy value of the second acrylic polymer in the adhesive layer 20 is preferably 0.05 eq / kg or more, more preferably 0.1 eq / kg or more, and even more preferably 0.2 eq / kg or more. The epoxy value of the second acrylic polymer is preferably 1 eq / kg or less, and more preferably 0.9 eq / kg or less. The content ratio of the second acrylic polymer having such an epoxy value in the adhesive layer 20 is preferably 5 to 95% by mass, and more preferably 40 to 80% by mass. The carboxylic acid value of the second acrylic polymer in the adhesive layer 20 is preferably 1 mgKOH / g or more, more preferably 3 mgKOH / g or more, and even more preferably 5 mgKOH / g or more. The carboxylic acid value of the second acrylic polymer is preferably 20 mgKOH / g or less, and more preferably 18 mgKOH / g or less. The content ratio of the second acrylic polymer of such a carboxylic acid value in the adhesive layer 20 is preferably 5 to 95% by mass, and more preferably 40 to 80% by mass. In order to achieve a certain degree of cross-linking, the adhesive layer 20 before curing for the purpose of viscous crystals is preferably blended with the adhesive layer 20 in the resin composition for forming an adhesive layer, for example. The polyfunctional compound that reacts and bonds with the functional group at the molecular chain end of the resin as a crosslinking agent. Such a structure is suitable for improving the adhesive properties of the adhesive layer 20 at a high temperature, and is suitable for improving the heat resistance of the adhesive layer 20. Examples of such a crosslinking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, terephthalic acid diisocyanate, 1,5-naphthalene diisocyanate, and an addition product of a polyol and a diisocyanate. Regarding the content of the cross-linking agent in the resin composition for forming an adhesive layer, the content of the formed adhesive layer 20 is increased relative to 100 parts by mass of the resin having the above-mentioned functional group capable of reacting and bonding with the cross-linking agent. From the viewpoint of cohesive force, it is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesive force of the formed adhesive layer 20, it is preferably 7 parts by mass or less. Moreover, as a crosslinking agent in the adhesive layer 20, you may use together other polyfunctional compounds, such as an epoxy resin, and a polyisocyanate compound. The content ratio of the high molecular weight component in the adhesive layer 20 as described above is preferably 50 to 100% by mass, and more preferably 50 to 80% by mass. The high molecular weight component refers to a component having a weight average molecular weight of 10,000 or more. Such a structure is advantageous for simultaneously achieving the adhesion of the adhesive layer 20 to the ring frame described below at room temperature and its vicinity and preventing residues during peeling. The adhesive layer 20 may contain a liquid resin that is liquid at 23 ° C. When the adhesive layer 20 contains such a liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, and more preferably 1 to 5% by mass. Such a structure is advantageous for simultaneously achieving the adhesion of the adhesive layer 20 to the ring frame described below at room temperature and its vicinity and preventing residues during peeling. The adhesive layer 20 may contain a filler. By blending the filler in the adhesive layer 20, it is possible to adjust the elastic modulus such as the tensile storage elastic modulus of the adhesive layer 20, or the physical properties such as electrical conductivity and thermal conductivity. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and nitride. Boron, crystalline silicon dioxide, and amorphous silicon dioxide can also be exemplified by simple metals such as aluminum, gold, silver, copper, and nickel, or alloys, amorphous carbon black, and graphite. The filler may have various shapes such as a spherical shape, a needle shape, and a flake shape. As the filler in the adhesive layer 20, one kind of filler may be used, or two or more kinds of fillers may be used. In order to ensure the adhesion of the adhesive layer 20 to the ring frame in the low-temperature expansion step described below, the content of the filler in the adhesive layer 20 is preferably 30% by mass or less, and more preferably 25% by mass or less. When the adhesive layer 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.005 to 1 μm. The structure in which the average particle diameter of the filler is 0.005 μm or more is suitable for achieving high wettability or adhesion of the adhesive layer 20 to an adherend such as a semiconductor wafer. The structure in which the average particle diameter of the filler is 10 μm or less is suitable for the adhesive layer 20 to enjoy a sufficient filler-adding effect and to ensure heat resistance. The average particle diameter of the filler can be determined using, for example, a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba, Ltd.). The adhesive layer 20 may contain other components as needed. Examples of the other components include a flame retardant, a silane coupling agent, and an ion trapping agent. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropyl Methyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, and antimony hydrous oxide (such as "IXE-300" manufactured by Toa Synthetic Co., Ltd.), and zirconium phosphate of a specific structure (such as manufactured by Toa Synthetic Co., Ltd. "IXE-100"), magnesium silicate (such as "Kyoword 600" manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (such as "Kyoword 700" manufactured by Kyowa Chemical Industry Co., Ltd.). A compound capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such a compound include a triazole-based compound, a tetrazole-based compound, and a bipyridine-based compound. Among these, a triazole-based compound is preferred from the viewpoint of the stability of the complex formed with the metal ion. Examples of such triazole-based compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, and carboxybenzene Benzotriazole, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-third-butylphenyl) -5-chlorobenzotriazole , 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-tert-pentylphenyl) Benzotriazole, 2- (2-hydroxy-5-third octylphenyl) benzotriazole, 6- (2-benzotriazolyl) -4-third octyl-6'-third Butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) Benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-ditripentyl-6-{(H-benzotriazol-1-yl) methyl } Phenol, 2- (2-hydroxy-5-third butylphenyl) -2H-benzotriazole, 3- [3-third butyl-4-hydroxy-5- (5-chloro-2H- Benzotriazol-2-yl) phenyl] octyl propionate, 3- [3-Third-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl ] 2-ethylhexyl propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4- (1,1,3, 3-tetramethylbutyl) phenol, 2- (2H- Benzotriazol-2-yl) -4-third butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-third octylbenzene Phenyl) benzotriazole, 2- (3-tert-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-dichloro Tripentylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-tert-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5 -Bis (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl) -4 -(1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzo Triazole and methyl 3- [3- (2H-benzotriazol-2-yl) -5-tert-butyl-4-hydroxyphenyl] propanoate. Moreover, you may use a specific hydroxyl-containing compound, such as a hydroquinone compound, a hydroxy anthraquinone compound, and a polyphenol compound, as an ion trapping agent. Specific examples of such a hydroxyl-containing compound include 1,2-benzenediol, alizarin, anthrarufin, tannin, gallic acid, methyl gallate, and biphenyl Triphenol and so on. As the other components described above, one component may be used, or two or more components may be used. The thickness of the adhesive layer 20 is, for example, in a range of 1 to 200 μm. The lower limit of the thickness is preferably 3 μm, and more preferably 5 μm. The upper limit of the thickness is preferably 100 μm, and more preferably 80 μm. In this embodiment, in the in-plane direction D of the die-cut die-bond film X, the outer peripheral end 20e of the adhesive layer 20 and the outer peripheral end 11e of the substrate 11 in the die-cut belt 10 and the outer peripheral end of the adhesive layer 12 12e is within 1000 μm, preferably within 500 μm. That is, the outer peripheral end 20e of the adhesive layer 20 is in the film surface inward direction D, and its entire circumference is located between 1000 μm inside and 1,000 μm outside with respect to the outer peripheral end 11e of the substrate 11, and preferably 500 μm inside. Between 500 μm to the outside and between 1000 μm on the inside and 1000 μm on the outside with respect to the outer peripheral end 12 e of the adhesive layer 12, preferably between 500 μm on the inside and 500 μm on the outside. In the structure in which the dicing tape 10 or its adhesive layer 12 and the adhesive layer 20 thereon have substantially the same size in the in-plane direction D, the adhesive layer 20 includes not only a work attachment area but also a frame attachment region. In the cut crystal adhesive film X, in the case where the adhesive layer 12 of the cut crystal strip 10 is a radiation-hardening adhesive layer, the T-type peeling test is performed at a temperature of 23 ° C. and a peeling speed of 300 mm / min. The peeling force between the adhesive layer 12 and the adhesive layer 20 after radiation hardening is preferably 0.04 N / 20 mm or more, more preferably 0.05 N / 20 mm or more, and more preferably 0.08 N / 20 mm or more. In a T-type peeling test at a temperature of 23 ° C and a peeling speed of 300 mm / min, the peeling force between the adhesive layer 12 and the adhesive layer 20 after radiation hardening is preferably 0.3 N / 20 mm or less. , More preferably 0.25 N / 20 mm or less, and even more preferably 0.22 N / 20 mm or less. Such a T-type peel test can be performed using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The test piece for this test was produced as follows. First, the adhesive layer 12 is irradiated with 350 mJ / cm on the substrate 11 side of the self-cutting crystal-bond film X 2 The ultraviolet rays harden the adhesive layer 12. Next, a substrate tape (trade name "BT-315", manufactured by Nitto Denko Corporation) was bonded to the adhesive layer 20 side of the die-bonding film X, and a width of 50 mm and a length of 120 mm was cut out. Test strip. As shown in FIG. 2, the die-cut die-bonding film X may be provided with a separator S. Specifically, it is possible to adopt a sheet-like form in which each of the cut-crystal sticky films X is provided with a separator S, or it is also possible to use a separator S in a long shape and arrange a plurality of cut-crystal sticky films X thereon and The separator S is wound into a roll shape. The separator S is an element for covering the surface of the adhesive layer 20 of the die-bonding film X, and is used to protect the die-bonding film X from the film. Examples of the separator S include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and a surface coated with a release agent such as a fluorine-based release agent or an acrylic long-chain alkyl ester-based release agent. Cloth plastic film or paper. The thickness of the separator S is, for example, 5 to 200 μm. The cut-to-size die-bonding film X having the structure described above can be produced, for example, as follows. First, as shown in FIG. 3 (a), an adhesive film 20 'is formed on the separator S. The adhesive film 20 ′ is a long film to be processed into the aforementioned adhesive layer 20. When preparing the adhesive film 20 ′, after preparing an adhesive composition for forming an adhesive layer, first, the adhesive composition is coated on the separator S to form an adhesive composition layer. Examples of the method for applying the adhesive composition layer include roll coating, screen coating, and gravure coating. Then, the adhesive composition layer is subjected to a cross-linking reaction as needed, or dried if necessary. The heating temperature is, for example, 70 to 160 ° C, and the heating time is, for example, 1 to 5 minutes. The adhesive film 20 'can be produced on the separator S in the above manner. Then, as shown in FIG. 3 (b), an adhesive layer 12 'is laminated on the adhesive film 20'. The adhesive layer 12 ′ is to be processed into the above-mentioned adhesive layer 12. When forming the adhesive layer 12 ′, for example, after preparing an adhesive solution for forming an adhesive layer, first, the adhesive solution is coated on the adhesive film 20 ′ to form an adhesive coating film. Examples of the coating method of the adhesive solution include roll coating, screen coating, and gravure coating. Then, the adhesive coating film is subjected to a cross-linking reaction as needed, or dried if necessary. The heating temperature is, for example, 80 to 150 ° C, and the heating time is, for example, 0.5 to 5 minutes. By such a laminated coating method, an adhesive film 20 ′ to be processed into the adhesive layer 20 and an adhesive layer 12 ′ to be processed into the adhesive layer 12 can be formed. Next, as shown in FIG. 3 (c), the base material 11 'is pressure-bonded on the adhesive layer 12' and bonded. The substrate 11 ′ is to be processed into the above-mentioned substrate 11. The resin substrate 11 'can be formed by a calendering method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, etc. Film production method. If necessary, a specific surface treatment is performed on the film or substrate 11 'after film formation. In this step, the bonding temperature is, for example, 30 to 50 ° C, and preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, and preferably 1 to 10 kgf / cm. In this step, a long laminated sheet having a laminated structure of a separator S, an adhesive film 20 ', an adhesive layer 12', and a substrate 11 'is obtained. When the adhesive layer 12 is a radiation-curable adhesive layer as described above, when the adhesive layer 12 ′ is laminated and then the adhesive layer 12 ′ is irradiated with radiation such as ultraviolet rays, for example, from the substrate 11 The side of the adhesive layer 12 is irradiated with radiation such as ultraviolet rays, and the irradiation amount is, for example, 50 to 500 mJ / cm 2 , Preferably 100 to 300 mJ / cm 2 . This irradiated area is, for example, the entire area of the adhesive layer 12 to be in close contact with the adhesive layer 20. Next, as shown in FIG. 3 (d), the laminated sheet is processed by inserting a processing knife from the side of the substrate 11 ′ to the separator S (in FIG. 3 (d), a thick solid line mode Characteristically indicates the cutting position). For example, while moving the laminated sheet body at a certain speed in a direction F, it is arranged to rotate around an axis orthogonal to the direction F, and to rotate the additional work knife equipped with a processing knife for press processing on the surface of the roller. The surface of the additional knife of a roller (not shown) abuts on the base material 11 'side of the laminated sheet body with a specific pressing force. Thereby, the dicing tape 10 (the base material 11 and the adhesive layer 12) and the adhesive layer 20 are formed in a single process, and the dicing die bonding film X is formed on the separator S. Thereafter, as shown in FIG. 3 (e), the material laminated portion around the cut-crystal-bond film X is removed from the spacer S. By the above-mentioned method, the cut-to-size die-bonding film X can be manufactured. In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor wafer with an adhesive layer 20, an expansion step using a cut die-bond film X, that is, an expansion step for cutting, may be performed. Therefore, in In the expanding step, it is necessary to appropriately make the cutting force act on the adhesive layer 20 on the dicing tape 10 in the dicing die-bonding film X. As described above, the adhesive layer 12 of the cut crystal strip 10 in the cut crystal adhesive film X contains at least a unit derived from lauryl (meth) acrylate and a unit derived from 2-hydroxyethyl (meth) acrylate The first acrylic polymer. The composition in which the acrylic polymer in the adhesive layer 12 includes a unit derived from lauryl (meth) acrylate and the structure including a unit derived from 2-hydroxyethyl (meth) acrylate are both suitable for achieving the crystalline band 10 The higher shear bonding force between the adhesive layer 12 and the adhesive layer 20 thereon is suitable for appropriately applying a cutting force to the dicing tape 10 which is expanded in the plane direction in the expansion step. The upper adhesive layer 20 is cut to cut it. Further, as described above, the adhesive layer 20 in the die-cut die-bond film X contains a second acrylic polymer having a nitrile group. Such a structure is suitable for achieving a high elastic modulus of the adhesive layer 20, and therefore, it is advantageous to achieve good cutting of the adhesive layer 20 in the expansion step for cutting. Furthermore, in the cut crystal adhesive film X, the first acrylic polymer in the adhesive layer 12 includes a unit derived from lauryl (meth) acrylate, and the second acrylic polymer in the adhesive layer 20 has a nitrile. The constitution of the base is favorable for ensuring the high shear adhesion between the two layers as described above, and for suppressing the binding interaction acting in the direction of the stacking between the two layers. In the case where the adhesive layer 12 and the adhesive layer 20 are formed by lamination by the lamination coating method as described above, for example, the binding interaction acting in the lamination direction between the two layers tends to become excessive, but the adhesive The acrylic polymer of the layer 12 contains units derived from lauryl (meth) acrylate and the acrylic polymer of the adhesive layer 20 has a nitrile group. The composition is suitable for ensuring a high shear adhesion between the two layers and suppressing The binding interaction acting in the direction of the stacking of the two layers. Furthermore, the nitrile group relative of the second acrylic polymer is set so that the above ratio of the absorption peaks in the infrared absorption spectrum of the second acrylic polymer is 0.01 or more, preferably 0.015 or more, and more preferably 0.02 or more. The above-mentioned composition of the content is suitable for easily peeling or picking up the semiconductor wafer with the adhesive layer 20 from the adhesive layer 12 in the pick-up step. In addition, the relative ratio of the nitrile group of the second acrylic polymer is set so that the ratio of the absorption peak in the infrared absorption spectrum of the second acrylic polymer is 0.1 or less, preferably 0.09 or less, and more preferably 0.08 or less. The above-mentioned structure of the content is suitable for suppressing the case where the semiconductor wafer of the severed adhesive layer 20 is partially peeled off from the adhesive layer 12 in the expansion step, that is, it is raised. As described above, the dicing die-bonding film X is suitable for achieving good cutting of the adhesive layer 20 on the dicing tape 10 in the expansion step, and is suitable for achieving good pickup of the semiconductor wafer with the adhesive layer 20 in the picking step. . The cut crystal adhesive film X can be designed with substantially the same size in the in-plane direction of the cut crystal tape 10 or its adhesive layer 12 and the adhesive layer 20 thereon, so that the adhesive layer 20 includes not only the work piece attachment The area includes a frame attachment area. Specifically, the following design can be adopted: as described above, in the in-plane direction of the die-cutting die-bonding film X, the outer peripheral end 20e of the adhesive layer 20 and the outer peripheral end 11e or the adhesive of the base material 11 of the die-cutting tape 10 The outer peripheral ends 12e of the layer 12 are within 1,000 μm, preferably within 500 μm. Such a cut crystal film X is suitable for performing a process of forming all the crystal strips 10 having a laminated structure with a base material 11 and an adhesive layer 12 and a process of forming Processing of the agent layer 20. Such a die-cut die-bond film X is suitable for achieving good cut-off of the adhesive layer 20 in the expansion step and for achieving good pickup of the semiconductor wafer with the adhesive layer 20 in the pick-up step, and reduces the number of manufacturing steps. From the viewpoint of controlling manufacturing costs, it is suitable for efficient manufacturing. In the first acrylic polymer in the adhesive layer 12 in the cut crystal adhesive film X, the unit derived from lauryl (meth) acrylate is relative to the unit derived from 2-hydroxyethyl (meth) acrylate. As described above, the molar ratio is preferably 1 or more, more preferably 3 or more, and even more preferably 5 or more. This structure is suitable for ensuring the high shear adhesion between the adhesive layer 12 of the dicing tape 10 and the adhesive layer 20 thereon, and is suitable for suppressing the action in the direction of the lamination between the two layers. The interaction of binding properties is therefore conducive to achieving good picking in the picking step. As described above, the Mohr ratio is preferably 40 or less, more preferably 35 or less, and even more preferably 30 or less. This structure is suitable for ensuring the adhesion or adhesion between the adhesive layer 12 and the adhesive layer 20 of the dicing tape 10, and is suitable for suppressing the occurrence of the semiconductor wafer self-adhesive layer 12 with the adhesive layer 20 in the expansion step. Partial peeling is the case of bulging. The first acrylic polymer in the adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film X is preferably an adduct of an unsaturated functional group-containing isocyanate compound as a radiation polymerizable component. In this case, the molar ratio of the unsaturated functional group-containing isocyanate compound in the adhesive layer 12 to the unit derived from 2-hydroxyethyl (meth) acrylate in the first acrylic polymer is as described above. It is preferably 0.1 or more, more preferably 0.2 or more, and even more preferably 0.3 or more. These structures are suitable for moderately hardening the adhesive layer 12 by the reaction between the first acrylic polymer and the unsaturated functional group-containing isocyanate compound. Hardening the adhesive layer 12 in advance before the expansion step facilitates the good cutting of the adhesive layer 20 in the expansion step. From the viewpoint of reducing the low-molecular-weight component in the adhesive layer 12 after curing, the first acrylic polymer is used to form a first acrylic polymer to which an isocyanate compound containing an unsaturated functional group is added. In the reaction composition of a polymer and an isocyanate compound containing an unsaturated functional group, the molar ratio of the isocyanate compound containing an unsaturated functional group in the first acrylic polymer to the unit derived from 2-hydroxyethyl (meth) acrylate is not sufficient. As described above, the ear ratio is preferably 2 or less, more preferably 1.5 or less, and even more preferably 1.3 or less. In the cut crystal adhesive film X, when the adhesive layer 12 of the cut crystal strip 10 is a radiation-hardened adhesive layer 12, the T-type peeling is performed at a temperature of 23 ° C. and a peeling speed of 300 mm / min. In the test, as described above, the peeling force between the adhesive layer 12 and the adhesive layer 20 after radiation hardening is preferably 0.04 N / 20 mm or more, more preferably 0.05 N / 20 mm or more, and more preferably 0.08 N / 20 mm or more. Such a structure is suitable for ensuring the adhesion or adhesion between the adhesive layer 12 of the dicing tape 10 and the adhesive layer 20 thereon, and is suitable for suppressing the occurrence of the self-adhesive of the semiconductor wafer with the adhesive layer 20 in the expansion step. In the case where the layer 12 is partially peeled off, that is, raised. In a T-type peel test at a temperature of 23 ° C and a peel speed of 300 mm / min, the peel force between the adhesive layer 12 and the adhesive layer 20 after radiation hardening is preferably 0.3 N / 20 mm as described above. Below, it is more preferably 0.25 N / 20 mm or less, and even more preferably 0.22 N / 20 mm or less. This configuration is suitable for achieving good pickup in the pickup step. 4 to 9 show a method for manufacturing a semiconductor device according to an embodiment of the present invention. In this method of manufacturing a semiconductor device, first, as shown in FIGS. 4 (a) and 4 (b), a dividing groove 30 a is formed on a semiconductor wafer W (dividing groove forming step). The semiconductor wafer W includes a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, and the semiconductor wafer W is held in the state of the wafer processing tape T1, and then used. A rotating blade of a dicing apparatus or the like forms a dividing groove 30a of a specific depth on the first surface Wa side of the semiconductor wafer W. The dividing groove 30 a is a space for separating the semiconductor wafer W into a semiconductor wafer unit (the dividing groove 30 a is schematically represented by a thick solid line in FIGS. 4 to 6). Next, as shown in FIG. 4 (c), the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is removed from the semiconductor wafer W. Of stripping. Next, as shown in FIG. 4 (d), while the semiconductor wafer W is held in the wafer processing tape T2, the semiconductor wafer W is thinned by grinding processing from the second surface Wb until It becomes a specific thickness (wafer thinning step). The grinding processing can be performed using a grinding processing device equipped with a grinding stone. With this wafer thinning step, in this embodiment, a semiconductor wafer 30A capable of being singulated into a plurality of semiconductor wafers 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connection portion) connecting a portion to be singulated into a plurality of semiconductor wafers 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the end on the second surface Wb side of the dividing groove 30a is, for example, 1 to 30 μm, and preferably 3 to 20 μm. . Next, as shown in FIG. 5 (a), the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die-bonding film X. Thereafter, as shown in FIG. 5 (b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A. In the case where the adhesive layer 12 in the dicing die-bonding film X is a radiation-hardening adhesive layer, the adhesive can also be applied from the side of the substrate 11 after the semiconductor wafer 30A is bonded to the adhesive layer 20 The layer 12 is irradiated with radiation such as ultraviolet rays, instead of the above-mentioned radiation irradiation during the manufacturing process of the cut-to-slice adhesive film X. The irradiation dose is, for example, 50 to 500 mJ / cm 2 , Preferably 100 to 300 mJ / cm 2 . The region (irradiated region R shown in FIG. 1) where the adhesive layer 12 is irradiated in the cut crystal adhesive film X is irradiated, for example, in the region where the adhesive layer 20 in the adhesive layer 12 is bonded. Areas other than the periphery. Then, after attaching the ring frame 41 to the adhesive layer 20 in the die-bonding film X, as shown in FIG. 6 (a), the die-bonding film X with the semiconductor wafer 30A is fixed to the expansion. Device holder 42. Next, as shown in FIG. 6 (b), the first expansion step (cold expansion step) under relatively low temperature conditions is performed, the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the die-cut die-bond film is formed. The X adhesive layer 20 is cut into small pieces of the adhesive layer 21 to obtain a semiconductor wafer 31 with the adhesive layer. In this step, the hollow cylinder-shaped jacking member 43 provided in the expansion device abuts on the dicing tape 10 on the lower side of the dicing die-bonding film X and rises, so that the dicing of the semiconductor wafer 30A is bonded. The dicing tape 10 of the die-bond crystal film X is expanded in a two-dimensional direction including a radial direction and a circumferential direction of the semiconductor wafer 30A. This expansion is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the crystalline zone 10. The temperature condition in the cold expansion step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The expansion speed (raising speed of the jacking member 43) in the cold expansion step is preferably 0.1 to 100 mm / sec. The expansion amount in the cold expansion step is preferably 3 to 16 mm. In this step, the semiconductor wafer 30A is cut at a thin and easily fractured portion, and is singulated into a semiconductor wafer 31. Moreover, in this step, the tensile stress generated by the dicing tape 10 is exerted in the adhesive layer 20 in close contact with the adhesive layer 12 of the dicing tape 10 that has been expanded, and is exerted in each region in close contact with each semiconductor wafer 31. On the other hand, such a deformation suppressing effect does not occur at a portion facing the dividing groove between the semiconductor wafer 31 and the portion. As a result, the adhesive layer 20 is cut at a portion facing the dividing groove between the adhesive layer 20 and the semiconductor wafer 31. After this step, as shown in FIG. 6 (c), the jacking member 43 is lowered to release the expanded state of the dicing tape 10. Then, as shown in FIG. 7 (a), a second expansion step under relatively high temperature conditions is performed to widen the distance (spacing distance) between the semiconductor wafers 31 with the adhesive layer. In this step, the hollow cylinder-shaped jacking member 43 provided in the expansion device rises again to expand the dicing tape 10 of the dicing die-bonding film X. The temperature condition in the second expansion step is, for example, 10 ° C or higher, and preferably 15 to 30 ° C. The expansion speed (raising speed of the jacking member 43) in the second expansion step is, for example, 0.1 to 10 mm / sec, and preferably 0.3 to 1 mm / sec. The expansion amount in the second expansion step is, for example, 3 to 16 mm. In this step, the separation distance of the semiconductor wafer 31 with the adhesive layer is widened to such an extent that the semiconductor wafer 31 with the adhesive layer can be appropriately picked from the dicing tape 10 in the following picking step. After this step, as shown in FIG. 7 (b), the jacking member 43 is lowered to release the expanded state of the dicing tape 10. In order to prevent the distance between the semiconductor wafer 31 with the adhesive layer on the dicing tape 10 from shrinking after the expansion state is released, it is preferred that the holding region of the dicing tape 10 be more than that of the semiconductor wafer 31 before the expansion state is released. The outer part is heated to shrink it. Then, if necessary, the semiconductor wafer 31 side of the dicing tape 10 of the semiconductor wafer 31 with an adhesive layer is cleaned with a cleaning liquid such as water. After this cleaning step, as shown in FIG. The semiconductor wafer 31 following the agent layer (pickup step). For example, on the lower side of the dicing tape 10, the pin member 44 of the pick-up mechanism is raised, and the semiconductor wafer 31 with the adhesive layer of the pickup object is lifted up through the dicing tape 10, and then suctioned by the suction jig 45 maintain. In the pick-up step, the jacking speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the jacking amount of the pin member 44 is, for example, 50 to 3000 μm. Then, as shown in FIG. 9 (a), the picked-up semiconductor wafer 31 with an adhesive layer is temporarily fixed to a specific adherend 51 via the adhesive layer 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor wafer. When the adhesive layer 21 is temporarily fixed at 25 ° C., the shear adhesive force to the adherend 51 is preferably 0.2 MPa or more, and more preferably 0.2 to 10 MPa. The composition of the adhesive layer 21 having a shear adhesive force of 0.2 MPa or more is suitable for suppressing the bonding surfaces of the adhesive layer 21 and the semiconductor wafer 31 or the adherend 51 due to ultrasonic vibration or heating in the following wire bonding step. When shear deformation occurs, wire bonding can be performed appropriately. In addition, when the adhesive layer 21 is temporarily fixed at 175 ° C., the shear adhesive force to the adherend 51 is preferably 0.01 MPa or more, and more preferably 0.01 to 5 MPa. Next, as shown in FIG. 9 (b), an electrode pad (not shown) of the semiconductor wafer 31 and a terminal portion (not shown) of the adherend 51 are electrically connected via a bonding wire 52 (wire bonding step) ). The connection between the electrode pad of the semiconductor wafer 31 or the terminal portion of the adherend 51 and the bonding wire 52 is achieved by ultrasonic welding with heating, and the adhesive layer 21 is not thermally hardened. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature during wire bonding is, for example, 80 to 250 ° C, and preferably 80 to 220 ° C. The heating time is several seconds to several minutes. Then, as shown in FIG. 9 (c), the semiconductor wafer 31 is sealed with a sealing resin 53 for protecting the semiconductor wafer 31 or the bonding wire 52 on the adherend 51 (sealing step). In this step, the adhesive layer 21 is thermally hardened. In this step, the sealing resin 53 is formed, for example, by a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. In the case where the sealing resin 53 is not sufficiently hardened in this step (sealing step), a post-curing step is performed after this step to completely harden the sealing resin 53. When the adhesive layer 21 is not completely thermally cured in the sealing step, the adhesive layer 21 and the sealing resin 53 may be completely thermally cured together in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C, and the heating time is, for example, 0.5 to 8 hours. The semiconductor device can be manufactured in the above manner. In this embodiment, as described above, after the semiconductor wafer 31 having the adhesive layer is temporarily fixed to the adherend 51, a wire bonding step is performed without temporarily curing the adhesive layer 21 completely. In the present invention, instead of such a configuration, after temporarily fixing the semiconductor wafer 31 with the adhesive layer to the adherend 51, the adhesive layer 21 is first thermally hardened before performing the wire bonding step. In the semiconductor device manufacturing method of the present invention, the wafer thinning step shown in FIG. 10 may be performed instead of the wafer thinning step described with reference to FIG. 4 (d). Referring to FIG. 4 (c), after the above process, in the wafer thinning step shown in FIG. 10, the semiconductor wafer W is maintained in the state of the wafer processing tape T2, and the wafer is removed from the second wafer by the second step. The surface Wb is subjected to grinding processing to be thinned to a specific thickness, and a semiconductor wafer divided body 30B including a plurality of semiconductor wafers 31 and held in the wafer processing tape T2 is formed. In this step, the following method can be adopted: grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side (first method); and the following method can also be adopted: grinding the wafer from the second surface Wb side until it is about to arrive The division groove 30a is formed by a crack between the division groove 30a and the second surface Wb by the pressing force of the rotating grindstone on the wafer, thereby forming a semiconductor wafer division 30B (second method). Depending on the method used, the depth of the divided groove 30a formed as described above with reference to FIGS. 4 (a) and 4 (b) from the first surface Wa is appropriately determined. In FIG. 10, the division grooves 30a treated by the first method or the division grooves 30a treated by the second method are schematically represented by thick solid lines and cracks connected to the division grooves 30a. In the present invention, instead of the semiconductor wafer 30A, the semiconductor wafer split body 30B produced as described above may be used and bonded to the die-cut die-bond film X, and then the above steps may be performed with reference to FIGS. 5 to 9. FIGS. 11 (a) and 11 (b) show a first expansion step (cold expansion step) performed after the die-bond film X is bonded to the semiconductor wafer segment 30B. In this step, the hollow cylinder-shaped jacking member 43 provided in the expansion device abuts on the dicing tape 10 on the lower side of the dicing die-bonding film X and rises, so that the semiconductor wafer segment 30B is bonded. The dicing tape 10 of the dicing die-bonding film X is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer segment 30B. This expansion is performed under the condition that the tensile stress in the range of 5 to 28 MPa, and preferably 8 to 25 MPa is generated in the crystalline band 10. The temperature condition in this step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The expansion speed (raising speed of the jacking member 43) in this step is, for example, 1 to 400 mm / sec. The expansion amount in this step is, for example, 50 to 200 mm. By this cold expansion step, the adhesive layer 20 of the die-bonding film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor wafer 31 with an adhesive layer. Specifically, in this step, the tensile stress generated by the dicing tape 10 is exerted in the adhesive layer 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 that has been expanded, and is exerted on the semiconductor wafer division 30B The deformation suppressing effect is provided in each region where the semiconductor wafers 31 are in close contact with each other. On the other hand, such a deformation suppressing effect does not occur at a portion facing the dividing groove 30 a between the semiconductor wafers 31. As a result, the adhesive layer 20 is cut at a portion facing the division groove 30 a between the semiconductor wafer 31. In the method for manufacturing a semiconductor device of the present invention, a semiconductor wafer 30C manufactured by the following method may be bonded to the dicing die-bond film X instead of bonding the semiconductor wafer 30A or the semiconductor wafer split 30B to The above-mentioned structure of the cut crystal die attach film X. As shown in FIGS. 12 (a) and 12 (b), first, a modified region 30 b is formed on the semiconductor wafer W. The semiconductor wafer W includes a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held in the state of the wafer processing tape T3, and On the opposite side of the wafer processing tape T3, the semiconductor wafer W is irradiated with laser light collected by the light-condensing points into the wafer along the planned division line, and is etched into the semiconductor wafer W by the ablation using multiphoton absorption. A modified region 30b is formed. The modified region 30b is a fragile region for separating the semiconductor wafer W into a semiconductor wafer unit. A method of forming a modified region 30b on a predetermined division line by irradiating a semiconductor wafer with laser light is described in detail in, for example, Japanese Patent Laid-Open No. 2002-192370. The laser light irradiation conditions in this embodiment are, for example, in Adjust appropriately within the following conditions. ＜ Laser light irradiation conditions ＞ (A) Laser light laser light source: semiconductor laser excitation Nd: YAG laser wavelength: 1064 nm cross section area of laser light spot: 3.14 × 10 -8 cm 2 Oscillation mode: Q switching pulse repetition frequency: 100 kHz or less Pulse width: 1 μs or less Output: 1 mJ or less Laser light quality: TEM00 Polarization characteristics: Linearly polarized light (B) Condensing lens magnification: 100 or less NA (numerical aperture, (Numerical aperture): 0.55 Transmittance to laser light wavelength: 100% or less (C) Movement speed of a stage for mounting a semiconductor substrate: 280 mm / sec or less Next, as shown in FIG. 12 (c), The circle W is held in the state of the wafer processing tape T3, and the semiconductor wafer W is thinned by grinding processing from the second surface Wb to a specific thickness, thereby forming a single wafer that can be formed into a plurality of semiconductors. The semiconductor wafer 30C of the wafer 31 (wafer thinning step). In the present invention, the semiconductor wafer 30C produced in the above manner may be used instead of the semiconductor wafer 30A, and the wafer 30A may be bonded to the dicing die attach film X, and then the above steps may be performed with reference to FIGS. 5 to 9. FIG. 13 (a) and FIG. 13 (b) show a first expansion step (cold expansion step) performed after the semiconductor wafer 30C is bonded to the dicing die-bond film X. FIG. In this step, the hollow cylinder-shaped jacking member 43 provided in the expansion device abuts on the dicing tape 10 on the lower side of the dicing die-bonding film X and rises, so that the cutting of the semiconductor wafer 30C is bonded. The dicing tape 10 of the die-bond crystal film X is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed under the condition that the tensile stress in the range of 5 to 28 MPa, and preferably 8 to 25 MPa is generated in the crystalline band 10. The temperature condition in this step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The expansion speed (raising speed of the jacking member 43) in this step is, for example, 1 to 400 mm / sec. The expansion amount in this step is, for example, 50 to 200 mm. By this cold expansion step, the adhesive layer 20 of the die-bonding film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor wafer 31 with an adhesive layer. Specifically, in this step, a crack is formed on the semiconductor wafer 30C in the fragile modified region 30b, and the semiconductor wafer 30C is singulated into a semiconductor wafer 31. In addition, in this step, the tensile stress generated by the dicing tape 10 is exerted in the adhesive layer 20 in close contact with the adhesive layer 12 of the dicing tape 10 which has been expanded, and is exerted on each semiconductor wafer 31 of the semiconductor wafer 30C. The deformation suppressing effect is provided in each of the closely-contacted regions. On the other hand, such a deformation suppressing effect does not occur in a portion facing the crack formation portion of the wafer. As a result, the adhesive layer 20 is cut at a portion facing the crack formation portion between the semiconductor wafer 31. Moreover, in the present invention, as described above, the dicing die-bonding film X can be used to obtain a semiconductor wafer with an adhesive layer, and can also be used to obtain a semiconductor wafer with an adhesive layer when a plurality of semiconductor wafers are laminated for three-dimensional mounting. . Between the semiconductor wafers 31 in such a three-dimensional mounting, the adhesive layer 21 and the spacer may be interposed, or the spacer may not be interposed. [Example] [Example 1] <Adhesive Layer> An acrylic polymer A was added to methyl ethyl ketone. 1 (The copolymer of ethyl acrylate, butyl acrylate, acrylonitrile, and glycidyl methacrylate, that is, the above-mentioned second acrylic polymer, has a weight average molecular weight of 1.2 million, a glass transition temperature of 0 ° C, and an epoxy value 0.4 eq / kg) 54 parts by mass, solid phenol resin (trade name "MEHC-7851SS", solid at 23 ° C, manufactured by Meiwa Chemical Co., Ltd.) 3 parts by mass, liquid phenol resin (trade name "MEH-8000H", 23 3 parts by mass of liquid at ℃, manufactured by Meiwa Chemical Co., Ltd., and 40 parts by mass of silicon dioxide filler (trade name "SO-C2", average particle diameter: 0.5 μm, manufactured by Admatechs Co., Ltd.), and mixed, The density | concentration was adjusted so that the viscosity at room temperature might become 700 mPa * s, and the adhesive composition was obtained. Then, the adhesive composition was coated on the polysiloxane release surface of the PET separator (thickness: 38 μm) having a polysiloxane release surface by using an applicator to form a coating film, and the coating film was formed. Heat-dry at 130 ° C for 2 minutes. An adhesive layer having a thickness of 10 μm in Example 1 was produced on the PET separator in the above manner. The composition of the adhesive layer in Example 1 is shown in Table 1. (In Table 1, in addition to the following values about MOI, the unit representing each value of the composition of the composition is the relative "mass part" in the composition. "). <Adhesive layer> In a reaction vessel provided with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 100 mol parts of lauryl acrylate (LA) and 20 mol parts of 2-hydroxyethyl acrylate (2HEA) will be contained. A mixture of 0.2 parts by mass of benzamidine peroxide as a polymerization initiator and toluene as a polymerization solvent with respect to 100 parts by mass of these monomer components was stirred at 60 ° C for 10 hours in a nitrogen atmosphere (polymerization reaction). ). Thereby, an acrylic polymer containing P is obtained. 1 Polymer solution. Acrylic polymer P in the polymer solution 1 Its weight average molecular weight (Mw) was 450,000, the glass transition temperature was 9.5 ° C, and the molar ratio of the unit derived from LA to the unit derived from 2HEA was 5. The acrylic polymer P 1 The mixture of the polymer solution, 2-methacryloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was stirred at room temperature in the air for 48 hours (plus成 反应). In this reaction solution, the formulated amount of MOI is 16 mol parts relative to 100 mol parts of the above lauryl acrylate, and the formulated amount of MOI is relative to acrylic polymer P. 1 The molar ratio of the 2HEA-derived units or the total hydroxyl groups thereof is 0.8. In this reaction solution, the blending amount of dibutyltin dilaurate is relative to the acrylic polymer P. 1 100 parts by mass is 0.01 part by mass. By this addition reaction, an acrylic polymer P containing a methacrylate group in a side chain is obtained. 2 A polymer solution (the above-mentioned first acrylic polymer to which an isocyanate compound containing an unsaturated functional group is added). Next, P polymer is added to the polymer solution relative to acrylic polymer P. 2 100 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) and 2 parts by mass of a photopolymerization initiator (trade name "Irgacure 127", manufactured by BASF) are mixed Toluene was added to the mixture to dilute it so that the viscosity of the mixture at room temperature became 500 mPa · s to obtain an adhesive solution. Next, using an applicator, an adhesive solution was coated on the above-mentioned adhesive layer formed on the PET separator to form a coating film. The coating film was heated and dried at 130 ° C for 2 minutes, and then applied to the adhesive layer. An adhesive layer with a thickness of 10 μm was formed. Next, using a laminator, a substrate made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0104") was laminated on the exposed surface of the adhesive layer at room temperature, with a thickness of 130 μm. Kurabo Industries Co., Ltd. Co., Ltd.). Next, a punching process is performed until the processing blade is inserted from the EVA base material side to the separator. Thereby, a 370 mm diameter disc-shaped die-bonding film having a laminated structure of an EVA substrate / adhesive layer / adhesive layer was formed on the separator. Then, the adhesive layer in the dicing tape was irradiated with ultraviolet rays from the EVA substrate side. When irradiating ultraviolet rays, use a high-pressure mercury lamp and set the cumulative irradiation light amount to 350 mJ / cm 2 . In the above manner, the crystal-cut adhesive film of Example 1 having a laminated structure including a crystal-cut tape (EVA substrate / adhesive layer) and an adhesive layer was produced. [Examples 2 and 3] When forming the adhesive layer, the MOI compounding amount was changed from 16 mol parts to 12 mol parts (Example 2) or 8 mol parts (Example 3). Each of the cut crystal sticky films of Examples 2 and 3 was produced in the same manner as the cut crystal sticky film of Example 1. [Example 4] When forming an adhesive layer, an acrylic polymer A was used 2 (Brand name "Teisanresin SG-70L", an acrylic copolymer having a nitrile group, that is, the above-mentioned second acrylic polymer, a weight average molecular weight of 900,000, a glass transition temperature of -13 ° C, and a carboxylic acid value of 5 mgKOH / g, manufactured by Nagase chemteX Co., Ltd.) 54 parts by mass instead of acrylic polymer A 1 54 parts by mass, and when the adhesive layer was formed, the MOI compounding amount was changed from 16 mol parts to 8 mol parts, except that it was fabricated and implemented in the same manner as the cut crystal adhesive film of Example 1. The die-cut die-bond film of Example 4. [Comparative Example 1] <Adhesive layer> In a reaction vessel provided with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 100 mol parts of 2-ethylhexyl acrylate (2EHA) and 2-hydroxy acrylate were contained. A mixture of 20 mole parts of ethyl acetate (2HEA), 0.2 parts by mass relative to 100 parts by mass of these monomer components, benzamidine peroxide as a polymerization initiator, and toluene as a polymerization solvent were mixed in a nitrogen atmosphere at It stirred at 60 degreeC for 10 hours (polymerization reaction). Thereby, an acrylic polymer containing P is obtained. 3 Polymer solution. Acrylic polymer P in the polymer solution 3 Its weight average molecular weight (Mw) was 400,000, and its glass transition temperature was 60 ° C. The acrylic polymer P 3 The mixture of the polymer solution, 2-methacryloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was stirred at room temperature in the air for 48 hours (plus成 反应). In this reaction solution, the formulated amount of MOI is 20 mol parts relative to 100 mol parts of the aforementioned 2-ethylhexyl acrylate. In this reaction solution, the blending amount of dibutyltin dilaurate is relative to the acrylic polymer P. 3 100 parts by mass is 0.01 part by mass. By this addition reaction, an acrylic polymer P containing a methacrylate group in a side chain is obtained. 4 Polymer solution. Next, P polymer is added to the polymer solution relative to acrylic polymer P. 4 100 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) and 2 parts by mass of a photopolymerization initiator (trade name "Irgacure 127", manufactured by BASF) are mixed Toluene was added to the mixture to dilute it so that the viscosity of the mixture at room temperature became 500 mPa · s to obtain an adhesive solution. When the adhesive layer was formed on the adhesive layer, except for using the adhesive solution, a cut crystal film of Comparative Example 1 was produced in the same manner as the cut crystal film of Example 1. [Comparative Example 2] When forming an adhesive layer, an acrylic polymer A was used 3 (Brand name "Paracron W-116.3", an acrylic polymer containing monomer units derived from ethyl acrylate, a weight average molecular weight of 900,000, a glass transition temperature of -22 ° C, and a carboxylic acid value of 7.8 mgKOH / g , Hydroxyl value 1.1 mgKOH / g, manufactured by Gensang Industrial Co., Ltd.) 54 parts by mass instead of acrylic polymer A 1 Except for 54 parts by mass, a cut crystal sticky film of Comparative Example 2 was produced in the same manner as the cut crystal sticky film of Example 1. <Infrared absorption spectrum> For acrylic polymer A 1 , A 2 , A 3 , Using an infrared spectroscopic analysis device (trade name "FT / IR-230", manufactured by JASCO Corporation) to measure the infrared absorption spectrum, and find the 1,730 cm in the obtained infrared absorption spectrum -1 Nearby peak 1 height and 2240 cm -1 The second peak height in the vicinity, and the ratio of the second peak height to the first peak height was calculated. The value is shown in Table 1. 1730 cm -1 The nearby first peak is an absorption peak of C = O stretching vibration. The height of the first peak is the 1670 cm passing point on the infrared absorption spectrum obtained. -1 With point 1860 cm -1 When the straight line is set as the baseline, the infrared absorption spectrum from 1670 cm -1 Up to 1860 cm -1 Maximum value within the range (1730 cm -1 There is only one in the vicinity) and the value from the baseline (specifically, the difference in absorbance) was calculated. 2240 cm -1 The nearby second wave is an absorption peak of C≡N stretching vibration. The height of the second peak is used to pass the point of 2220 cm on the same infrared absorption spectrum. -1 With point 2270 cm -1 When the straight line is set as the baseline, the infrared absorption spectrum from 2220 cm -1 Up to 2270 cm -1 Maximum value within the range (2240 cm -1 Only one in the vicinity) was obtained from the baseline value (specifically, the difference in absorbance). <T-type peeling test> The peeling force between the adhesive layer and the adhesive layer was measured with respect to each of the crystal-cut adhesive films of Examples 1 to 4 and Comparative Examples 1 and 2 as follows. First, a test piece was produced from each of the cut crystal and sticky film. Specifically, the base material side of the self-cut crystal adhesive film irradiates the adhesive layer with 350 mJ / cm 2 After the adhesive layer is hardened by ultraviolet rays, a substrate tape (trade name "BT-315", manufactured by Nitto Denko Corporation) is bonded to the adhesive layer side of the die-cut adhesive film. A test piece having a size of 50 mm in width × 120 mm in length was cut out from the crystal-adhesive film. Furthermore, using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), the test piece was subjected to a T-peel test to measure the peel force (N / 20 mm). In this measurement, the temperature condition was set to 23 ° C, and the peeling speed was set to 300 mm / min. The measurement results are shown in Table 1. <Implementation of Expansion Step and Picking Step> Using each of the die-cut adhesive films of Examples 1 to 4 and Comparative Examples 1 and 2, the following bonding step, the first expansion step (cold expansion step) for cutting, and The second expansion step (normal-temperature expansion step) and the pick-up step are performed at intervals. In the bonding step, a semiconductor wafer segment held in a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) is bonded to an adhesive layer of a die-bonding film, and thereafter , The wafer processing tape is peeled from the semiconductor wafer division. When bonding, a bonding machine was used, the bonding speed was set to 10 mm / sec, the temperature condition was set to 60 ° C, and the pressure condition was set to 0.15 MPa. The semiconductor wafer division system is prepared by forming as follows. First, a bare wafer (12 inches in diameter and 780 μm in thickness) was held in a wafer processing tape (brand name "V12S-R2-P", manufactured by Nitto Denko Corporation) together with the ring frame. (Tokyo Chemical Co., Ltd.), on one side, a cutting device (trade name "DFD6260", manufactured by Disco Co., Ltd.) was used to form a dividing groove (width 25 μm, depth) for singulation using a rotating blade. 50 μm, a block is a grid of 6 mm × 12 mm). Next, the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) was bonded to the surface of the division groove forming surface, and then the wafer processing tape (trade name "V12S-R2-P") was attached. Stripped from wafer. After that, the wafer was thinned to a thickness of 20 using a back grinding device (trade name "DGP8760", manufactured by Disco Co., Ltd.) from the other side of the wafer (the side where the dividing grooves are not formed). μm, followed by dry polishing using the same device, thereby mirror-polishing the ground surface. The semiconductor wafer division is formed as described above (in a state of being held on a wafer processing tape). The semiconductor wafer segment includes a plurality of semiconductor wafers (6 mm × 12 mm). The cold expansion step is performed by a cold expansion unit using a wafer isolation device (trade name "Die Separator DDS3200", manufactured by Disco Co., Ltd.). Specifically, first, at room temperature, a diameter of 12 inches was attached to the frame attachment area (around the work attachment area) of the adhesive layer in the above-mentioned dicing die attach film with a semiconductor wafer division. Inch SUS ring frame (manufactured by Disco Co., Ltd.). Then, the die-cutting die-bonding film is installed in the device, and the die-cutting band of the die-cutting die-attach film with a semiconductor wafer divided body is expanded by a cold expansion unit of the same device. In this cold expansion step, the temperature was -15 ° C, the expansion speed was 100 mm / sec, and the expansion amount was 7 mm. The normal temperature expansion step is performed by a normal temperature expansion unit using a wafer isolator (trade name "Die Separator DDS3200", manufactured by Disco Co., Ltd.). Specifically, the dicing tape of the dicing die-bonding film with the semiconductor wafer singulation body after the above-mentioned cold expansion step is expanded by the normal temperature expansion unit of the same device. In the normal temperature expansion step, the temperature was 23 ° C., the expansion speed was 1 mm / sec, and the expansion amount was 10 mm. After that, the shredded crystal film that has been expanded at room temperature is subjected to a heat shrinking treatment. The processing temperature was 200 ° C, and the processing time was 20 seconds. In the pick-up step, using a device having a pick-up mechanism (trade name "Die Bonder SPA-300", manufactured by Shinkawa Corporation), an attempt was made to pick up a singulated semiconductor wafer with an adhesive layer on a dicing tape. Regarding this pick-up, the jacking speed of the pin member was 1 mm / sec, the jack-up amount was 2000 μm, and the number of pick-up evaluations was five. In the process as described above using each of the die-cut die-bond films of Examples 1 to 4 and Comparative Examples 1 and 2, regarding the cold expansion step, in the case where the semiconductor wafer with the adhesive layer does not swell from the crystalline band At the time, the bulge at the time of the cut was evaluated as good (○). Regarding the picking step, when all the 5 semiconductor wafers with the adhesive layer were successfully picked from the self-cut wafer, the pickability was evaluated as good (○). If this is not the case, the pickability is evaluated as bad (×). The evaluation results are shown in Table 1. [Evaluation] According to the dicing die-bonding films of Examples 1 to 4, in the cold expansion step, the adhesive layer can be well cut without the semiconductor wafer with the adhesive layer rising from the dicing tape, and, In the pickup step, the semiconductor wafer with the adhesive layer can be appropriately picked up. [Table 1]

10‧‧‧切晶帶10‧‧‧ cut crystal ribbon

10'‧‧‧帶10'‧‧‧ belt

11‧‧‧基材11‧‧‧ Substrate

11'‧‧‧基材11'‧‧‧ Substrate

11e‧‧‧外周端11e‧‧‧outer end

12‧‧‧黏著劑層12‧‧‧ Adhesive layer

12'‧‧‧黏著劑層12'‧‧‧Adhesive layer

12a‧‧‧黏著面12a‧‧‧ Adhesive surface

12e‧‧‧外周端12e‧‧‧outer end

20‧‧‧接著劑層20‧‧‧ Adhesive layer

20'‧‧‧接著劑膜20'‧‧‧ Adhesive film

20e‧‧‧外周端20e‧‧‧outer end

21‧‧‧接著劑層21‧‧‧ Adhesive layer

30a‧‧‧分割槽30a‧‧‧ split groove

30b‧‧‧改質區域30b‧‧‧Modified area

30A‧‧‧半導體晶圓30A‧‧‧Semiconductor wafer

30B‧‧‧半導體晶圓分割體30B‧‧‧Semiconductor Wafer Split

30C‧‧‧半導體晶圓30C‧‧‧Semiconductor wafer

31‧‧‧半導體晶片31‧‧‧semiconductor wafer

41‧‧‧環狀框41‧‧‧ ring frame

42‧‧‧保持具42‧‧‧ holder

43‧‧‧頂起構件43‧‧‧ jacking member

44‧‧‧銷構件44‧‧‧pin member

45‧‧‧吸附治具45‧‧‧Adsorption fixture

51‧‧‧被黏著體51‧‧‧ adherend

52‧‧‧接合線52‧‧‧ bonding wire

53‧‧‧密封樹脂53‧‧‧sealing resin

60‧‧‧切晶帶60‧‧‧cut crystal ribbon

61‧‧‧基材61‧‧‧ substrate

62‧‧‧黏著劑層62‧‧‧Adhesive layer

62e‧‧‧外周端62e‧‧‧outer end

70‧‧‧黏晶膜70‧‧‧ Sticky Crystal Film

70e‧‧‧外周端70e‧‧‧outer end

81‧‧‧半導體晶圓81‧‧‧Semiconductor wafer

82‧‧‧環狀框82‧‧‧ ring frame

83‧‧‧分隔件83‧‧‧ divider

D‧‧‧面內方向D‧‧‧ In-plane direction

F‧‧‧移動方向F‧‧‧moving direction

R‧‧‧照射區域R‧‧‧ Irradiated area

S‧‧‧分隔件S‧‧‧ divider

T1‧‧‧晶圓加工用帶T1‧‧‧ Wafer Processing Tape

T1a‧‧‧黏著面T1a‧‧‧ Adhesive surface

T2‧‧‧ 晶圓加工用帶T2‧‧‧ Wafer Processing Tape

T2a‧‧‧黏著面T2a‧‧‧ Adhesive surface

T3‧‧‧ 晶圓加工用帶T3‧‧‧ Wafer Processing Tape

T3a‧‧‧黏著面T3a‧‧‧ Adhesive surface

W‧‧‧半導體晶圓W‧‧‧Semiconductor wafer

Wa‧‧‧第1面Wa‧‧‧Part 1

Wb‧‧‧第2面Wb‧‧‧Part 2

X‧‧‧切晶黏晶膜X‧‧‧ cut crystal

Y‧‧‧切晶黏晶膜Y‧‧‧Cut crystal film

圖1係本發明之一實施形態之切晶黏晶膜之剖面模式圖。 圖2係表示圖1所示之切晶黏晶膜於附帶分隔件之情形時之一例。 圖3(a)～(e)係表示圖1所示之切晶黏晶膜之製造方法之一例。 圖4(a)～(d)係表示使用圖1所示之切晶黏晶膜之半導體裝置製造方法中之部分步驟。 圖5(a)、(b)係表示圖4所示之步驟之後續步驟。 圖6(a)～(c)係表示圖5所示之步驟之後續步驟。 圖7(a)、(b)係表示圖6所示之步驟之後續步驟。 圖8係表示圖7所示之步驟之後續步驟。 圖9(a)～(c)係表示圖8所示之步驟之後續步驟。 圖10係表示使用圖1所示之切晶黏晶膜之半導體裝置製造方法之變化例中之部分步驟。 圖11(a)、(b)係表示使用圖1所示之切晶黏晶膜之半導體裝置製造方法之變化例中之部分步驟。 圖12(a)～(c)係表示使用圖1所示之切晶黏晶膜之半導體裝置製造方法之變化例中之部分步驟。 圖13(a)、(b)係表示使用圖1所示之切晶黏晶膜之半導體裝置製造方法之變化例中之部分步驟。 圖14係表示先前之切晶黏晶膜之剖面模式圖。 圖15係表示圖14所示之切晶黏晶膜之使用態樣。 圖16係表示圖14所示之切晶黏晶膜之一供給形態。FIG. 1 is a schematic cross-sectional view of a cut crystal adhesive film according to an embodiment of the present invention. FIG. 2 shows an example of the case where the cut-to-size die-bond film shown in FIG. 1 is provided with a separator. 3 (a) to (e) show an example of a method for manufacturing the cut-to-crystal adhesive film shown in FIG. 1. 4 (a) to 4 (d) are diagrams showing some steps in a method for manufacturing a semiconductor device using the dicing die-bonding film shown in FIG. 5 (a) and 5 (b) show subsequent steps of the step shown in FIG. 6 (a) to 6 (c) show subsequent steps of the step shown in FIG. 7 (a) and 7 (b) show subsequent steps of the step shown in FIG. FIG. 8 shows steps subsequent to the step shown in FIG. 7. 9 (a) to (c) show subsequent steps of the step shown in FIG. FIG. 10 shows part of the steps in a modified example of the method of manufacturing a semiconductor device using the die-cut die-bond film shown in FIG. 1. 11 (a) and 11 (b) are partial steps in a modified example of a method for manufacturing a semiconductor device using the die-cut die-bond film shown in FIG. 12 (a) to 12 (c) are partial steps in a modified example of a method for manufacturing a semiconductor device using the die-cut die-bond film shown in FIG. 13 (a) and 13 (b) are partial steps in a modified example of a method for manufacturing a semiconductor device using the die-cut die-bond film shown in FIG. FIG. 14 is a schematic cross-sectional view showing a conventional crystalline die-bonding film. FIG. 15 is a view showing a use state of the cut crystal adhesive film shown in FIG. 14. FIG. 16 is a view showing a supply mode of one of the cut crystal sticky film shown in FIG. 14.

Claims (10)

一種切晶黏晶膜，其具備切晶帶與接著劑層， 該切晶帶具有包含基材與黏著劑層之積層構造，該接著劑層可剝離地密接於上述切晶帶中之上述黏著劑層；且 上述黏著劑層含有包含源自(甲基)丙烯酸月桂酯之單元及源自(甲基)丙烯酸2-羥基乙酯之單元之第1丙烯酸系聚合物， 上述接著劑層含有具有腈基之第2丙烯酸系聚合物，且 於上述第2丙烯酸系聚合物之紅外線吸收光譜中，源自腈基之2240 cm-1 附近之波峰高度相對於源自羰基之1730 cm-1 附近之波峰高度的比為0.01～0.1。A cut crystal sticky film comprising a cut crystal band and an adhesive layer. The cut crystal band has a laminated structure including a substrate and an adhesive layer, and the adhesive layer is peelably adhered to the above-mentioned adhesion in the above-mentioned cut crystal belt. The adhesive layer contains a first acrylic polymer containing a unit derived from lauryl (meth) acrylate and a unit derived from 2-hydroxyethyl (meth) acrylate, and the adhesive layer contains The second acrylic polymer of a nitrile group, and in the infrared absorption spectrum of the second acrylic polymer described above, the peak height of the vicinity of 2240 cm -1 derived from the nitrile group is relative to that of 1,730 cm -1 derived from the carbonyl group. The peak height ratio is 0.01 to 0.1. 如請求項1之切晶黏晶膜，其中上述第2丙烯酸系聚合物之環氧值為0.05～1 eq/kg。For example, the cut crystal and sticky film of claim 1, wherein the epoxy value of the second acrylic polymer is 0.05 to 1 eq / kg. 如請求項1之切晶黏晶膜，其中上述第2丙烯酸系聚合物之羧酸值為1～20 mgKOH/g。For example, the cut crystal and sticky film of claim 1, wherein the carboxylic acid value of the second acrylic polymer is 1 to 20 mgKOH / g. 如請求項1之切晶黏晶膜，其中上述接著劑層中之上述第2丙烯酸系聚合物之含有比率為5～95質量%。For example, the crystal-cut adhesive film of claim 1, wherein the content ratio of the second acrylic polymer in the adhesive layer is 5 to 95% by mass. 如請求項1之切晶黏晶膜，其中上述黏著劑層為放射線硬化型黏著劑層，且 於溫度23℃及剝離速度300 mm/min之條件下之T型剝離試驗中，放射線硬化後之上述黏著劑層與上述接著劑層之間之剝離力為0.04～0.3 N/20 mm。For example, the chip-cut adhesive film of claim 1, wherein the adhesive layer is a radiation-hardening adhesive layer, and in a T-type peeling test at a temperature of 23 ° C and a peeling speed of 300 mm / min, The peeling force between the adhesive layer and the adhesive layer is 0.04 to 0.3 N / 20 mm. 如請求項1之切晶黏晶膜，其中上述第1丙烯酸系聚合物為含不飽和官能基之異氰酸酯化合物之加成物。The cut crystal and sticky film according to claim 1, wherein the first acrylic polymer is an adduct of an isocyanate compound containing an unsaturated functional group. 如請求項6之切晶黏晶膜，其中上述第1丙烯酸系聚合物中之上述含不飽和官能基之異氰酸酯化合物相對於上述源自(甲基)丙烯酸2-羥基乙酯之單元的莫耳比率為0.1以上。The crystal-cutting viscous film according to claim 6, wherein the unsaturated functional group-containing isocyanate compound in the first acrylic polymer is molar with respect to the unit derived from the 2-hydroxyethyl (meth) acrylate. The ratio is 0.1 or more. 如請求項1至7中任一項之切晶黏晶膜，其中上述第1丙烯酸系聚合物中之上述源自(甲基)丙烯酸月桂酯之單元相對於上述源自(甲基)丙烯酸2-羥基乙酯之單元的莫耳比率為1～40。The cut crystal and sticking film according to any one of claims 1 to 7, wherein the above-mentioned unit derived from (meth) acrylate lauryl in the first acrylic polymer is relative to the above-mentioned (meth) acrylic acid-derived 2 The molar ratio of the unit of hydroxyethyl ester is 1 to 40. 如請求項8之切晶黏晶膜，其中上述接著劑層之外周端於膜面內方向上與上述黏著劑層之外周端相距1000 μm以內。For example, the cut-to-size adhesive film of claim 8, wherein the outer peripheral end of the adhesive layer is within 1000 μm from the outer peripheral end of the adhesive layer in the direction of the film surface. 如請求項1至7中任一項之切晶黏晶膜，其中上述接著劑層之外周端於膜面內方向上與上述黏著劑層之外周端相距1000 μm以內。The cut crystal adhesive film according to any one of claims 1 to 7, wherein the outer peripheral end of the adhesive layer is within 1,000 μm from the outer peripheral end of the adhesive layer in the direction of the film surface.
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TWI825285B (en) * 2019-03-26 2023-12-11 日商日東電工股份有限公司 Cutting tape with adhesive film

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