JP2018182276A - Dicing die-bonding film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing die-bonding film which allows an adhesive layer on a dicing tape to be cleaved satisfactorily and which enables the materialization of good pickup of each adhesive layer-attached semiconductor chip after the cleaving in an expanding step in which a dicing die-bonding film is used to obtain the adhesive layer-attached semiconductor chip.SOLUTION: A dicing die-bonding film comprises: a dicing tape having a laminate structure including a base material and a sticker layer; and an adhesive layer which is put in close contact with the sticker layer of the dicing tape peelably. The sticker layer surface has an elastic modulus of 0.1-20 MPa at the time of push-in of 500 nm according to a nanoindentation method under the condition of a frequency of 100 Hz at a temperature of 23°C.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dicing die bond film. More particularly, the present invention relates to a dicing die bond film that can be used in the process of manufacturing a semiconductor device.

  In the process of manufacturing a conductor device, a dicing die bond film may be used in the process of obtaining a semiconductor chip having an adhesive film of a chip equivalent size for die bonding, that is, a semiconductor chip with an adhesive layer for die bonding. The dicing die bond film has a size corresponding to the semiconductor wafer to be processed, and, for example, a dicing tape consisting of a substrate and an adhesive layer, and a die bond film peelably attached to the adhesive layer side (adhesive Agent layer).

  As one of methods for obtaining a semiconductor chip with an adhesive layer using a dicing die bond film, a method is known which involves a process for expanding a dicing tape in the dicing die bond film and breaking the die bond film. In this method, first, a semiconductor wafer is bonded onto a die bond film of a dicing die bond film. This semiconductor wafer is, for example, cut later together with a die bond film and processed so as to be singulated into a plurality of semiconductor chips. Next, in order to cleave the die bond film on the dicing tape, the dicing tape of the dicing die bond film is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer using an expanding device. In this expanding step, cutting also occurs in the semiconductor wafer on the die bonding film at a location corresponding to the cutting location in the die bonding film, and the semiconductor wafer is separated into a plurality of semiconductor chips on the dicing die bonding film or dicing tape. Next, an expanding step is performed again to extend the separation distance for the plurality of semiconductor chips with a die bond film after cutting on the dicing tape. Next, for example, after passing through a cleaning process, each semiconductor chip is pushed up from the lower side of the dicing tape by the pin member of the pickup mechanism together with a die bond film of a chip equivalent size in close contact with it, and picked up from the dicing tape. In this way, a die bond film, ie, a semiconductor chip with an adhesive layer is obtained. The semiconductor chip with an adhesive layer is fixed by die bonding to an adherend such as a mounting substrate via the adhesive layer. About the technique regarding the dicing die-bonding film used as mentioned above, it describes in the following patent documents 1-3, for example.

JP 2007-2173 A JP, 2010-177401, A JP, 2016-115804, A

  FIG. 14 shows a conventional dicing die bond film Y in a schematic cross-sectional view. The dicing die bond film Y is composed of a dicing tape 60 and a die bond film 70. The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 that exerts an adhesive force. The die bond film 70 is in close contact with the pressure-sensitive adhesive layer 62 by the adhesive force of the pressure-sensitive adhesive layer 62. Such a dicing die bond film Y has a disk shape of a size corresponding to a semiconductor wafer which is a processing target or a workpiece in the manufacturing process of a semiconductor device, and can be used in the above-mentioned expanding step. For example, as shown in FIG. 15, in the state where the semiconductor wafer 81 is bonded to the die bonding film 70 and the ring frame 82 is bonded to the pressure-sensitive adhesive layer 62, the above-mentioned expanding step is performed. The semiconductor wafer 81 is, for example, processed so as to be singulated into a plurality of semiconductor chips. The ring frame 82 is a frame member with which a transport mechanism such as a transport arm provided in the expanding device abuts mechanically at the time of workpiece transport in a state where the ring frame 82 is attached to the dicing die bond film Y. The conventional dicing die bonding film Y is designed such that such a ring frame 82 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60. That is, the conventional dicing die bond film Y has a design in which a ring frame attachment area is secured around the die bond film 70 in the adhesive layer 62 of the dicing tape 60. In such a design, the distance in the film in-plane direction between the outer peripheral end 62 e of the pressure-sensitive adhesive layer 62 and the outer peripheral end 70 e of the die bond film 70 is about 10 to 30 mm.

  The present invention has been conceived under the circumstances as described above, and the purpose thereof is that on a dicing tape in an expanding step in which a dicing die bond film is used to obtain a semiconductor chip with an adhesive layer. It is an object of the present invention to provide a dicing die-bonding film capable of satisfactorily cleaving an adhesive layer and realizing a good pickup for a semiconductor chip with an adhesive layer after cleaving.

  The inventors of the present invention conducted extensive studies to achieve the above object, and as a result of using a dicing die-bonding film whose elastic modulus at the time of 500 nm indentation by the nanoindentation method of the pressure-sensitive adhesive layer is within a specific range. It has been found that the adhesive layer on the dicing tape can be satisfactorily cut and good pickup can be realized for the adhesive-layer-attached semiconductor chip after the cutting. The present invention has been completed based on these findings.

  That is, the present invention comprises a dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer, and an adhesive layer peelably adhered to the pressure-sensitive adhesive layer in the dicing tape, the pressure-sensitive adhesive layer The dicing die-bonding film whose elastic modulus at the time of 500 nm indentation by the nanoindentation method on the conditions of temperature 23 degreeC and frequency 100 Hz is 0.1-20 Mpa of the surface is provided.

  The dicing die bond film of the present invention comprises a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a substrate and an adhesive layer. The adhesive layer peelably adheres to the pressure-sensitive adhesive layer in the dicing tape. The pressure-sensitive adhesive layer of the dicing tape has an elastic modulus of 0.1 to 20 MPa when pressed in 500 nm on the surface of the pressure-sensitive adhesive layer under the conditions of a temperature of 23 ° C. and a frequency of 100 Hz. The dicing die-bonding film of such a configuration can be used to obtain a semiconductor chip with an adhesive layer in the process of manufacturing a semiconductor device. In the dicing / die-bonding film of the present invention, for example, a process for forming a pressure-sensitive adhesive layer by coating a composition for forming a pressure-sensitive adhesive layer on an adhesive layer formed on a separator and solidifying it, or The composition for forming an adhesive layer is coated on a pressure-sensitive adhesive layer formed on a substrate and solidified to form an adhesive layer, and manufacturing is performed by a method (laminate coating method) Is possible.

  In the process of manufacturing a semiconductor device, as described above, in order to obtain a semiconductor chip with an adhesive layer, an expanding step performed using a dicing die bond film, that is, an expanding step for cutting may be performed. In this expanding step, it is necessary that cutting force appropriately act on the adhesive layer on the dicing tape in the dicing die bonding film. As described above, the pressure-sensitive adhesive layer of the dicing tape in the dicing die-bonding film of the present invention has an elastic modulus of 0. 0 on the surface of the pressure-sensitive adhesive layer when it is pushed 500 nm by the nanoindentation method at a temperature of 23 ° C and a frequency of 100 Hz. It is 1 to 20 MPa. The elastic modulus by the nanoindentation method is obtained by continuously measuring the load applied to the indenter and the indentation depth when the indenter is pressed into the surface of the pressure-sensitive adhesive layer during loading and unloading. An elastic modulus determined from a load-push-in depth curve. Thus, the elastic modulus by the nanoindentation method is an index that represents the physical properties of the surface of the pressure-sensitive adhesive layer, and is an index that is an index that represents the physical properties of the entire pressure-sensitive adhesive layer. Elastic modulus such as elastic modulus is different. When the elastic modulus of the pressure-sensitive adhesive layer in the dicing die-bonding film of the present invention is 0.1 MPa or more by such a nano-indentation method, the stress generated at the time of expansion is easily transmitted to the adhesive layer. It can be cut well, and the adhesion between the pressure-sensitive adhesive layer and the adhesive layer can be made appropriate, and the occurrence of peeling between the pressure-sensitive adhesive layer and the adhesive layer in the expanding step can be suppressed. . In addition, when the modulus of elasticity by the nanoindentation method is 20 MPa or less, cracking of the pressure-sensitive adhesive layer in the expanding step can be made less likely to occur, and in the pick-up step, the semiconductor chip with an adhesive layer after cutting is adhesive It is possible to peel well from the agent layer and to realize a good pickup. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer described later, it is preferable that the elastic modulus of the pressure-sensitive adhesive layer 12 after radiation curing by the nanoindentation method is within the above range.

  In addition, the dicing die bond film of the present invention includes the dicing tape or the pressure-sensitive adhesive layer and the adhesive layer thereon in the film plane so that the adhesive layer includes the frame attachment area in addition to the work attachment area. It is possible to design with substantially the same dimensions in the direction. For example, in the in-plane direction of the dicing die bond film, a design in which the outer peripheral end of the adhesive layer is within a distance of 1000 μm from each outer peripheral end of the base of the dicing tape or the pressure sensitive adhesive layer can be employed. Such a dicing die-bonding film of the present invention is, for example, one dicing tape having a laminated structure of a substrate and an adhesive layer after the lamination formation of the adhesive layer and the adhesive layer by the above-mentioned lamination coating method. It is possible to carry out the processing for forming and the processing for forming one adhesive layer collectively by processing such as one punching processing.

  In the manufacturing process of the above-mentioned conventional dicing die bond film Y, a processing step (first processing step) for forming the dicing tape 60 of a predetermined size and shape, and a die bond film 70 of a predetermined size and shape A processing step (second processing step) for forming is required as a separate step. In the first processing step, for example, a separator, a base layer to be formed into the base 61, and a pressure-sensitive adhesive layer positioned between them to be formed into the pressure-sensitive adhesive layer 62 The processing which makes a processing blade plunge from the side of a substrate layer to a separator is given to the lamination sheet object which has the lamination structure of these. Thereby, the dicing tape 60 having a laminated structure of the pressure-sensitive adhesive layer 62 on the separator and the base 61 is formed on the separator. In the second processing step, for example, with respect to a laminated sheet having a laminated structure of a separator and an adhesive layer to be formed into a die bond film 70, the processing blade from the adhesive layer side to the separator Processing to make the plunge is given. Thereby, the die-bonding film 70 is formed on the separator. The dicing tape 60 and the die bond film 70 thus formed in separate steps are then laminated while being aligned. FIG. 16 shows a conventional dicing die bond film Y with a separator 83 covering the die bond film 70 surface and the adhesive layer 62 surface.

  On the other hand, the dicing die-bonding film of the present invention in the case where the dicing tape or the pressure-sensitive adhesive layer thereof and the adhesive layer thereon have substantially the same design dimensions in the film in-plane direction is, for example, the above-mentioned laminate coating A process for forming a dicing tape having a laminated structure of a base material and an adhesive layer, and a method for forming an adhesive layer after laminating an adhesive layer and an adhesive layer by a method It is possible to carry out the processing at one time by processing such as punching processing. Such a dicing die-bonding film of the present invention is suitable for achieving a good pick-up of the semiconductor chip with an adhesive layer in the pick-up step, as well as a good cleavage of the adhesive layer in the expanding step. It is also suitable for efficient manufacturing from the viewpoint of reduction of

  In the dicing die-bonding film of the present invention, the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer, and the pressure-sensitive adhesive after radiation curing in a T-peel test under conditions of a temperature of 23 ° C. and a peeling speed of 300 mm / min. The peel force between the layer and the adhesive layer is preferably 0.06 to 0.25 N / 20 mm. The adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon is secured as the peeling force in the T-type peeling test after the radiation curing is 0.06 N / 20 mm or more, and the expanding step In the above, it is possible to further suppress the occurrence of partial peeling, that is, floating, from the adhesive layer of the semiconductor chip with an adhesive layer. A better pickup can be realized in the pickup step when the peeling force in the T-peel test after the radiation curing is 0.25 N / 20 mm or less.

  In the dicing die bond film of the present invention, the peeling force between the pressure-sensitive adhesive layer and the adhesive layer before radiation curing is 2N in a T-type peeling test under conditions of a temperature of 23 ° C. and a peeling speed of 300 mm / min. It is preferable that it is / 20 mm or more. The adhesive layer of the dicing tape and the adhesive layer thereon in the case where the expanding step is carried out in a state where the radiation curing is not performed if the peeling force in the T-type peeling test before the radiation curing is 2N / 20 mm or more The adhesive layer between the adhesive layer and the adhesive layer of the semiconductor chip with the adhesive layer in the expanding step, while further suppressing the occurrence of peeling or lifting from the adhesive layer. Can.

  In the dicing die bond film of the present invention, the difference between the surface roughness Ra of the surface of the pressure-sensitive adhesive layer and the surface roughness Ra of the surface of the adhesive layer at the contact surface of the pressure-sensitive adhesive layer and the adhesive layer is 100 nm. It is preferable that it is the following. The adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon can be further improved as the difference in the surface roughness Ra is 100 nm or less, and the semiconductor chip with the adhesive layer in the expanding step Generation of partial peeling from the pressure-sensitive adhesive layer, that is, floating can be further suppressed.

  Moreover, in the dicing die-bonding film of the present invention, the pressure-sensitive adhesive layer includes a first structural unit derived from a (meth) acrylate having an alkyl group having 10 or more carbon atoms and a structural unit derived from 2-hydroxyethyl (meth) acrylate. It is preferable to contain an acrylic polymer. When the pressure-sensitive adhesive layer contains the first acrylic polymer, peeling of the semiconductor chip with the adhesive layer from the pressure-sensitive adhesive layer of the dicing tape becomes easier in the pickup step, and a better pickup can be realized. it can.

  In the dicing / die-bonding film of the present invention, a constituent unit derived from (meth) acrylate having an alkyl group having 10 or more carbon atoms in the first acrylic polymer relative to a constituent unit derived from 2-hydroxyethyl (meth) acrylate The molar ratio is preferably 1 to 40. The interaction between the pressure-sensitive adhesive layer in the dicing tape and the adhesive layer thereon tends to become stronger as the molar ratio decreases, and the interaction is suppressed relatively low when the molar ratio is 1 or more. In the pick-up step, peeling of the semiconductor chip with the adhesive layer from the adhesive layer of the dicing tape becomes easier, and a better pickup can be realized. Further, when the molar ratio is 40 or less, the above-mentioned interaction can be maintained to some extent, and the adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon is secured, and in the expanding step. It is possible to further suppress the occurrence of partial peeling, that is, floating, from the adhesive layer of the semiconductor chip with an adhesive layer.

  In the dicing die-bonding film of the present invention, the first acrylic polymer contains a constituent unit derived from an unsaturated functional group-containing isocyanate compound, and the composition derived from the unsaturated functional group-containing isocyanate compound in the first acrylic polymer It is preferable that the molar ratio with respect to the structural unit derived from 2-hydroxyethyl (meth) acrylate of a unit is 0.1-2. The elastic modulus of the pressure-sensitive adhesive layer after radiation curing according to the nanoindentation method after the first acrylic polymer contains a structural unit derived from an unsaturated functional group-containing isocyanate compound and the molar ratio is 0.1 or more Tends to improve, and the adhesive layer can be cut better in the expanding step. The elastic modulus by the said nanoindentation method of the adhesive layer after radiation curing tends to fall that the said molar ratio is 2 or less, and the crack of the adhesive layer in an expand process can be made more difficult to occur. .

  Further, in the dicing die bond film of the present invention, the adhesive layer has an adhesive strength to SUS of 0.1 to 20 N / 10 mm under the conditions of a temperature of 23 ° C., a peeling speed of 300 mm / min and an angle of 180 °. preferable. When the ring frame is attached to the adhesive layer in the expanding step with the adhesive strength of 0.1 N / 10 mm or more, the adhesion between the adhesive layer and the ring frame is improved, and in the expanding step Can be well held. When the ring frame is attached to the adhesive layer in the expanding step when the adhesive strength is 20 N / 10 mm or less, peeling of the dicing die bond film of the present invention from the ring frame is facilitated.

  In the dicing die bond film of the present invention, the adhesive layer preferably has a storage elastic modulus at 23 ° C. of 100 to 4000 MPa. When the ring frame is attached to the adhesive layer in the expanding step when the storage elastic modulus is 100 MPa or more, peeling of the dicing die bond film of the present invention from the ring frame is facilitated. When the ring frame is attached to the adhesive layer in the expanding step as the storage elastic modulus is 4000 MPa or less, the adhesion between the adhesive layer and the ring frame is improved, and the dicing die bonding of the present invention is performed by the ring frame in the expanding step. The film can be held well.

  The dicing die bond film of the present invention makes it possible to satisfactorily cleave the adhesive layer on the dicing tape in the expanding step in which the dicing die bond film is used to obtain a semiconductor chip with an adhesive layer, and the semiconductor substrate with an adhesive layer after cleaving. It is possible to realize a good pickup for the chip.

It is a cross-sectional schematic diagram which shows one Embodiment of the dicing die-bonding film of this invention. An example in case the dicing die-bonding film shown in FIG. 1 has a separator is represented. 7 illustrates an example of a method of manufacturing a dicing die bond film shown in FIG. It represents a part of steps in a method of manufacturing a semiconductor device using the dicing die bond film shown in FIG. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 10 represents a step following the step shown in FIG. FIG. 16 illustrates a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die bond film shown in FIG. 1. FIG. 16 illustrates a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die bond film shown in FIG. 1. FIG. 16 illustrates a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die bond film shown in FIG. 1. FIG. 16 illustrates a part of steps in a modification of the method for manufacturing a semiconductor device using the dicing die bond film shown in FIG. 1. It is a cross-sectional schematic diagram of the conventional dicing die-bonding film. Fig. 15 illustrates a usage of the dicing die bond film shown in Fig. 14. 17 illustrates one supply form of a dicing die bond film shown in FIG.

[Dicing die bond film]
The dicing die-bonding film of the present invention comprises a dicing tape having a laminated structure including a substrate and a pressure-sensitive adhesive layer, and an adhesive layer peelably adhered to the pressure-sensitive adhesive layer in the dicing tape. One embodiment of the dicing die bond film of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing an embodiment of a dicing die bond film of the present invention.

  As shown in FIG. 1, the dicing die bond film X includes a dicing tape 10 and an adhesive layer 20 laminated on the adhesive layer 12 in the dicing tape 10, and a semiconductor chip with an adhesive layer in the manufacture of a semiconductor device. Can be used in the expanding step in the process of obtaining The dicing die bond film X has a disk shape of a size corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device. The diameter of the dicing die bond film X is, for example, within the range of 345 to 380 mm (12 inch wafer compatible type) within the range of 245 to 280 mm (8 inch wafer compatible type) within the range of 195 to 230 mm (6 inch wafer compatible type Or within the range of 495 to 530 mm (18 inch wafer compatible). The dicing tape 10 in the dicing die bond film X has a laminated structure including the substrate 11 and the pressure-sensitive adhesive layer 12.

(Base material)
The base material 11 in the dicing tape 10 is an element which functions as a support in the dicing tape 10 and the dicing die bond film X. Examples of the substrate 11 include plastic substrates (particularly plastic films). The substrate 11 may be a single layer or a laminate of the same or different substrates.

  Examples of the resin constituting the plastic base include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene , Polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene- Polyolefin resins such as butene copolymer, ethylene-hexene copolymer; polyurethane; polyester such as polyethylene terephthalate (PET), polyethylene naphthalate, polybutylene terephthalate (PBT); polycarbonate; polyimide; Polyetheretherketone; polyetherimides; aramid, polyamide such as wholly aromatic polyamide; polyphenyl sulfide; fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, and the like. From the viewpoint of securing good heat shrinkability in the base material 11 and easily maintaining the chip separation distance by utilizing the partial heat shrinkage of the dicing tape 10 or the base material 11 in the normal temperature expanding step described later, the base material 11 is It is preferable to contain an ethylene-vinyl acetate copolymer as a main component. Here, the main component of the base material 11 is a component that occupies the largest mass ratio among the constituent components. The said resin may be used only by 1 type, and 2 or more types may be used. When the pressure-sensitive adhesive layer 12 is a radiation-curable pressure-sensitive adhesive layer as described later, the substrate 11 preferably has radiation transparency.

  When the substrate 11 is a plastic film, the plastic film may be non-oriented or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film can be thermally shrunk in the at least one direction. When it has heat shrinkability, it becomes possible to heat shrink the outer peripheral part of the semiconductor wafer of the dicing tape 10, and thereby the distance between the semiconductor chips with the separated adhesive layer is expanded. The semiconductor chip can be easily picked up because the semiconductor chip can be fixed. In order for the substrate 11 and the dicing tape 10 to have isotropic heat shrinkability, the substrate 11 is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching a non-stretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The substrate 11 and the dicing tape 10 preferably have a thermal contraction rate of 1 to 30%, more preferably 2 to 25% in a heat treatment test performed under the conditions of a heating temperature of 100 ° C. and a heating time treatment of 60 seconds. More preferably, it is 3 to 20%, and particularly preferably 5 to 20%. The heat shrinkage rate is preferably a heat shrinkage rate in at least one direction of the MD direction and the TD direction.

  The surface on the pressure-sensitive adhesive layer 12 side of the substrate 11 has, for example, corona discharge treatment, plasma treatment, sand mat processing, ozone exposure treatment, flame exposure treatment, for the purpose of enhancing the adhesion, retention, etc. with the pressure-sensitive adhesive layer 12. Physical treatments such as high piezoelectric shock exposure treatment, ionizing radiation treatment, etc .; Chemical treatments such as chromic acid treatment; surface treatments such as easy adhesion treatment with a coating agent (primer) may be applied. Moreover, in order to provide antistatic ability, you may provide the conductive vapor deposition layer containing a metal, an alloy, these oxides, etc. on the base-material 11 surface. It is preferable that the surface treatment for improving the adhesion be performed on the entire surface of the substrate 11 on the pressure-sensitive adhesive layer 12 side.

  The thickness of the substrate 11 is preferably 40 μm or more, more preferably 50 μm or more, and further preferably from the viewpoint of securing the strength for the substrate 11 to function as a support in the dicing tape 10 and the dicing die bond film X Is 55 μm or more, particularly preferably 60 μm or more. In addition, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 and the dicing die bond film X, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less .

(Pressure-sensitive adhesive layer)
As described above, the pressure-sensitive adhesive layer 12 in the dicing die bond film X has an elastic modulus of 0.1 to 20 MPa when pressed 500 nm by the nanoindentation method at a temperature of 23 ° C. and a frequency of 100 Hz on the pressure-sensitive adhesive layer surface. Preferably it is 0.5-15 MPa, More preferably, it is 1-10 MPa. When the elastic modulus by the nanoindentation method is 0.1 MPa or more, the stress generated at the time of expansion is easily transmitted to the adhesive layer, so that the adhesive layer can be cut satisfactorily, and the adhesive layer and the adhesive layer The adhesion between the pressure-sensitive adhesive layer and the adhesive layer in the expanding step can be suppressed. In addition, when the modulus of elasticity by the nanoindentation method is 20 MPa or less, cracking of the pressure-sensitive adhesive layer in the expanding step can be made less likely to occur, and in the pick-up step, the semiconductor chip with an adhesive layer after cutting is adhesive It is possible to peel well from the agent layer and to realize a good pickup.

  The elastic modulus by the nanoindentation method is obtained by continuously measuring the load applied to the indenter and the indentation depth when the indenter is pressed into the surface of the pressure-sensitive adhesive layer during loading and unloading. An elastic modulus determined from a load-push-in depth curve. That is, the elastic modulus by the nanoindentation method is an index that represents the physical properties of the surface of the pressure-sensitive adhesive layer, and is a tensile modulus obtained by the conventional viscoelasticity measurement that is an index that represents the physical properties of the entire pressure-sensitive adhesive layer. Is different from the elastic modulus of The modulus of elasticity of the pressure-sensitive adhesive layer according to the nanoindentation method is the modulus of elasticity obtained by the nanoindentation test under the conditions of load: 1 mN, loading / unloading rate: 0.1 mN / s, holding time: 1 s .

  The pressure-sensitive adhesive layer 12 of the dicing tape 10 preferably contains an acrylic polymer as a base polymer. The said acryl-type polymer is a polymer containing the structural unit derived from an acryl-type monomer (The monomer component which has a (meth) acryloyl group in a molecule | numerator) as a structural unit of a polymer. It is preferable that the said acryl-type polymer is a polymer which contains the structural unit originating in a (meth) acrylic acid ester most by mass ratio. In addition, an acryl-type polymer may use only 1 type, and may use 2 or more types. Further, in the present specification, “(meth) acrylic” represents “acrylic” and / or “methacrylic” (any one or both of “acrylic” and “methacrylic”), and the same applies to others. .

  As said (meth) acrylic acid ester, hydrocarbon group containing (meth) acrylic acid ester is mentioned, for example. As the hydrocarbon group-containing (meth) acrylic acid ester, hydrocarbon group-containing (meth) acrylic acid esters such as (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, (meth) acrylic acid aryl ester and the like It can be mentioned. Examples of the (meth) acrylic acid alkyl ester include methyl ester of (meth) acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (lauryl ester), tridecyl ester, tetradecyl ester Hexadecyl ester, octadecyl ester, eicosyl ester and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl ester of (meth) acrylic acid and benzyl ester. Among the above, the hydrocarbon group-containing (meth) acrylic acid ester is preferably a (meth) acrylic acid alkyl ester, more preferably a (meth) acrylate having an alkyl group having 10 or more carbon atoms. That is, it is preferable that the said acryl-type polymer contains the structural unit derived from the (meth) acrylate which has a C10 or more alkyl group. The hydrocarbon group-containing (meth) acrylic acid ester may be used alone or in combination of two or more.

Examples of the (meth) acrylate having an alkyl group having 10 or more carbon atoms include decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate ((meth) acrylate) Lauryl acrylate), tridecyl (meth) acrylate, tetradecyl (meth) acrylate, hexadecyl (meth) acrylate, octadecyl (meth) acrylate, eicosyl (meth) acrylate And (meth) acrylates having a C _10-25 alkyl group). Among these, lauryl (meth) acrylate is preferable.

  In order to properly express in the adhesive layer 12 basic characteristics such as adhesiveness by the hydrocarbon group-containing (meth) acrylate, hydrocarbon group-containing (meth) in all monomer components for forming an acrylic polymer 40 mass% or more is preferable, and, as for the ratio of acrylic acid ester (In particular, the (meth) acrylate which has a C10 or more alkyl group), More preferably, it is 60 mass% or more.

  The acrylic polymer may contain a structural unit derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylic acid ester for the purpose of modifying cohesion, heat resistance and the like. Examples of the other monomer component include functional groups such as carboxy group-containing monomer, acid anhydride monomer, hydroxy group-containing monomer, glycidyl group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide, and acrylonitrile. Included monomers and the like. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid and the like. Examples of the acid anhydride monomer include maleic anhydride, itaconic anhydride and the like. Examples of the above-mentioned hydroxy group-containing monomers include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Examples thereof include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomers include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamido-2-methylpropane sulfonic acid, (meth) acrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate, (meth Acryloyloxy naphthalene sulfonic acid etc. are mentioned. As said phosphoric acid group containing monomer, 2-hydroxyethyl acryloyl phosphate etc. are mentioned, for example. Among other monomer components, a hydroxy group-containing monomer is preferable, and more preferably 2-hydroxyethyl (meth) acrylate (2-hydroxyethyl (meth) acrylate). That is, it is preferable that the said acryl-type polymer contains the structural unit derived from 2-hydroxyethyl (meth) acrylate. The other monomer components may be used alone or in combination of two or more.

  In order to properly express in the pressure-sensitive adhesive layer 12 basic characteristics such as tackiness with a hydrocarbon group-containing (meth) acrylate, the above-mentioned other monomer components (particularly, all monomer components for forming an acrylic polymer) 60 mass% or less is preferable, and, as for the ratio of 2-hydroxyethyl (meth) acrylate, it is 40 mass% or less more preferably.

  The above-mentioned acrylic polymer is, in particular, an acrylic polymer containing at least a constituent unit derived from (meth) acrylate having an alkyl group having 10 or more carbon atoms and a constituent unit derived from 2-hydroxyethyl (meth) acrylate ("first acrylic type It is preferable that it may be called "polymer". That is, the pressure-sensitive adhesive layer 12 contains a first acrylic polymer containing at least a structural unit derived from a (meth) acrylate having an alkyl group having 10 or more carbon atoms and a structural unit derived from 2-hydroxyethyl (meth) acrylate. Is preferred. When the pressure-sensitive adhesive layer 12 contains the first acrylic polymer, peeling of the semiconductor chip with an adhesive layer from the pressure-sensitive adhesive layer of the dicing tape becomes easier in the pickup step, and a better pickup can be realized.

  The molar ratio of the structural unit derived from (meth) acrylate having an alkyl group having 10 or more carbon atoms to the structural unit derived from 2-hydroxyethyl (meth) acrylate in the first acrylic polymer is 1 or more Preferably, it is 3 or more, more preferably 5 or more. Moreover, it is preferable that the said molar ratio is 40 or less, More preferably, it is 35 or less, More preferably, it is 30 or less. The interaction between the pressure-sensitive adhesive layer in the dicing tape and the adhesive layer thereon tends to become stronger as the molar ratio decreases, and the interaction is suppressed relatively low when the molar ratio is 1 or more. In the pick-up step, peeling of the semiconductor chip with the adhesive layer from the adhesive layer of the dicing tape becomes easier, and a better pickup can be realized. Further, when the molar ratio is 40 or less, the above-mentioned interaction can be maintained to some extent, and the adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon is secured, and in the expanding step. It is possible to further suppress the occurrence of partial peeling, that is, floating, from the adhesive layer of the semiconductor chip with an adhesive layer.

  The above-mentioned acrylic polymer containing the first acrylic polymer contains a structural unit derived from a polyfunctional monomer copolymerizable with the monomer component forming the acrylic polymer in order to form a crosslinked structure in the polymer skeleton It may be. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, penta Erythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (eg, polyglycidyl (meth) acrylate), polyester The monomer etc. which have a (meth) acryloyl group and other reactive functional groups in the molecule | numerator of (meth) acrylate, urethane (meth) acrylate, etc. are mentioned. The polyfunctional monomers may be used alone or in combination of two or more. In order to properly express in the pressure-sensitive adhesive layer 12 basic characteristics such as tackiness with a hydrocarbon group-containing (meth) acrylic acid ester, the ratio of the polyfunctional monomer in all monomer components for forming an acrylic polymer 40 mass% or less is preferable, More preferably, it is 30 mass% or less.

  An acrylic polymer is obtained by subjecting one or more monomer components containing an acrylic monomer to polymerization. As a polymerization method, solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like can be mentioned.

  The number average molecular weight of the acrylic polymer is preferably 100,000 or more, and more preferably 200,000 to 3,000,000. When the number average molecular weight is 100,000 or more, the amount of low molecular weight substances in the pressure-sensitive adhesive layer tends to be small, and the contamination of the adhesive layer, the semiconductor wafer and the like can be further suppressed.

  The pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 may contain a crosslinking agent. For example, when using an acrylic polymer as the base polymer, the acrylic polymer can be crosslinked to further reduce the low molecular weight substance in the pressure-sensitive adhesive layer 12. In addition, the number average molecular weight of the acrylic polymer can be increased. As said crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. When using a crosslinking agent, about 5 mass parts or less are preferable with respect to 100 mass parts of base polymers, More preferably, it is 0.1-5 mass parts.

  The pressure-sensitive adhesive layer 12 may be a pressure-sensitive adhesive layer (pressure-sensitive adhesive type pressure-sensitive adhesive layer) in which the pressure-sensitive adhesive force can be intentionally reduced by an external action such as radiation irradiation or heating. It may be a pressure-sensitive adhesive layer (pressure-sensitive adhesive non-reducible type pressure-sensitive adhesive layer) with little or no decrease in adhesion depending on the action, and individualization of a semiconductor wafer separated into pieces using dicing die bond film X It can be selected appropriately according to the method, conditions, etc.

  When the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 12 exhibits relatively high adhesion and relatively low adhesion in the production process and use process of the dicing die bond film X. It is possible to selectively use the state shown. For example, when bonding the adhesive layer 20 to the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the manufacturing process of the dicing die bond film X, or when the dicing die bond film X is used in the dicing step, the adhesive layer 12 is relatively While it becomes possible to suppress and prevent the floating of the adherend such as the adhesive layer 20 from the pressure-sensitive adhesive layer 12 by utilizing the state of exhibiting high adhesive strength, thereafter, from the dicing tape 10 of the dicing die bond film X In the pick-up step for picking up the semiconductor chip with the adhesive layer, by reducing the adhesive force of the pressure-sensitive adhesive layer 12, the pickup can be easily performed.

  Examples of the pressure-sensitive adhesive forming such an adhesive force-reducing pressure-sensitive adhesive layer include a radiation-curable pressure-sensitive adhesive and a heat-foaming pressure-sensitive adhesive. As a pressure-sensitive adhesive that forms the pressure-sensitive adhesive layer, a type of pressure-sensitive adhesive may be used, or two or more types of pressure-sensitive adhesives may be used.

  As the radiation-curable pressure-sensitive adhesive, for example, a pressure-sensitive adhesive of a type which can be cured by irradiation of electron beam, ultraviolet light, α-ray, β-ray, γ-ray or X-ray can be used. A pressure-sensitive adhesive (ultraviolet-curable pressure-sensitive adhesive) can be particularly preferably used.

  The radiation-curable pressure-sensitive adhesive contains, for example, a base polymer such as the acrylic polymer, and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. An additive type radiation curable adhesive can be mentioned.

  Examples of the radiation polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta ( Examples include meta) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type and polybutadiene type, and those having a molecular weight of about 100 to 30,000 are preferable. The content of the radiation-curable monomer component and the oligomer component in the radiation-curable pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 is, for example, 5 to 500 parts by mass, preferably 40 to 500 parts by mass with respect to 100 parts by mass of the base polymer. It is about 150 parts by mass. In addition, as the addition type radiation-curable pressure-sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

  The radiation-curable pressure-sensitive adhesive is an internal radiation-curable resin containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond or the like in the polymer side chain or in the polymer main chain at the polymer main chain terminal. Also included are mold-type adhesives. When such an internal-type radiation-curable pressure-sensitive adhesive is used, there is a tendency to be able to suppress unintended changes in adhesion properties caused by the movement of low molecular weight components in the formed pressure-sensitive adhesive layer 12 over time. .

  As a base polymer contained in the above-mentioned intrinsic type radiation-curable pressure-sensitive adhesive, an acrylic polymer (in particular, the above-mentioned first acrylic polymer) is preferable. As a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a raw material monomer containing a monomer component having a first functional group was polymerized (copolymerized) to obtain an acrylic polymer. Thereafter, a compound having a second functional group capable of reacting with the first functional group and a radiation-polymerizable carbon-carbon double bond, while maintaining the radiation-polymerizable carbon-carbon double bond, is an acrylic polymer Methods for condensation reaction or addition reaction.

  Examples of combinations of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, An isocyanate group, a hydroxy group, etc. are mentioned. Among these, the combination of a hydroxy group and an isocyanate group and the combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easiness of reaction tracking. Among them, it is technically difficult to produce a polymer having a highly reactive isocyanate group, while the first functional group is preferably from the viewpoint of the ease of preparation and availability of an acrylic polymer having a hydroxy group. The combination which is a hydroxyl group and whose said 2nd functional group is an isocyanate group is preferable. As a compound having an isocyanate group and a radiation polymerizable carbon-carbon double bond in this case, that is, a radiation polymerizable unsaturated functional group-containing isocyanate compound, for example, methacryloyl isocyanate, 2-methacryloyl oxyethyl isocyanate, m- Isopropenyl-α, α-dimethylbenzyl isocyanate and the like can be mentioned. Moreover, as an acrylic polymer having a hydroxy group, one comprising a constitutional unit derived from the above-mentioned hydroxy group-containing monomer, or an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether Can be mentioned.

  When the first acrylic polymer has a structural unit derived from an unsaturated functional group-containing isocyanate compound, it is derived from 2-hydroxyethyl (meth) acrylate of the structural unit derived from the unsaturated functional group-containing isocyanate compound in the first acrylic polymer 0.1 or more are preferable, as for the molar ratio with respect to the structural unit of, and more preferably 0.2 or more, and more preferably 0.3 or more. Further, the molar ratio is preferably 2 or less, more preferably 1.5 or less, and still more preferably 1 or less. When the molar ratio is 0.1 or more, the elastic modulus of the radiation-cured pressure-sensitive adhesive layer tends to be improved by the nano-indentation method, and the adhesive layer is more favorably cut in the expanding step. it can. The elastic modulus by the said nanoindentation method of the adhesive layer after radiation curing tends to fall that the said molar ratio is 2 or less, and the crack of the adhesive layer in an expand process can be made more difficult to occur. .

  The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, Examples include camphor quinone, halogenated ketones, acyl phosphinoxides, and acyl phosphonates. Examples of the above α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, 2-methyl-2-hydroxy Propiophenone, 1-hydroxycyclohexyl phenyl ketone and the like can be mentioned. Examples of the above acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2 -Morpholinopropane-1 etc. are mentioned. Examples of the above-mentioned benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether and the like. Examples of the ketal compounds include benzyl dimethyl ketal and the like. As said aromatic sulfonyl chloride type compound, 2-naphthalene sulfonyl chloride etc. are mentioned, for example. Examples of the photoactive oxime compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime and the like. Examples of the benzophenone compounds include benzophenone, benzoylbenzoic acid, 3,3'-dimethyl-4-methoxybenzophenone and the like. Examples of the thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro thioxanthone, 2,4-diethyl thioxanthone, 2,4-diisopropyl Thioxanthone etc. are mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

  The heat-foaming type pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, azides and the like. Examples of the organic foaming agent include salt-fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide and barium azodicarboxylate; Hydrazine compounds such as sulfonylhydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide), allylbis (sulfonylhydrazide) and the like; p-toluylenesulfonyl semicarbazide, 4,4'- Semicarbazide compounds such as oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholine-1,2,3,4-thiatriazole; N, N'-dinitrosopentamethylenetetramine, N, N'-di Chill -N, N-nitroso compounds such as N'- dinitrosoterephthalamide, and the like. Examples of the thermally expandable microspheres include microspheres having a configuration in which a substance that is easily gasified and expanded by heating is enclosed in a shell. Examples of the substance which is easily gasified and expanded by the above heating include isobutane, propane, pentane and the like. Thermally expandable microspheres can be produced by encapsulating a substance which is easily gasified and expanded by heating into a shell-forming substance by a coacervation method, an interfacial polymerization method or the like. As the above-mentioned shell-forming substance, a substance exhibiting heat melting property or a substance which can be ruptured by the action of thermal expansion of the encapsulating substance can be used. Examples of such a substance include vinylidene chloride / acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.

  Examples of the non-adhesive force-reducing pressure-sensitive adhesive layer include a pressure-sensitive pressure-sensitive adhesive layer. In the pressure-sensitive adhesive layer, a pressure-sensitive adhesive layer formed of the radiation-curable pressure-sensitive adhesive described above in relation to the pressure-sensitive adhesive layer is previously adhered to a pressure-sensitive adhesive layer and cured. Agent layer is included. As a pressure-sensitive adhesive that forms the non-pressure-sensitive adhesive layer, one kind of pressure-sensitive adhesive may be used, or two or more kinds of pressure-sensitive adhesives may be used. In addition, the entire pressure-sensitive adhesive layer 12 may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or a part may be an adhesive force non-reducing type pressure-sensitive adhesive layer. For example, when the pressure-sensitive adhesive layer 12 has a single-layer structure, the entire pressure-sensitive adhesive layer 12 may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or a predetermined portion of the pressure-sensitive adhesive layer 12 (for example, a ring frame The adhesion target area, which is the area outside the central area) is the non-adhesive force reducing type adhesive layer, and the other part (for example, the central area which is the adhesion target area of the semiconductor wafer) is the adhesive strength reduced It may be a mold pressure-sensitive adhesive layer. Moreover, when the pressure-sensitive adhesive layer 12 has a laminated structure, all the pressure-sensitive adhesive layers in the laminated structure may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or some of the pressure-sensitive adhesive layers in the laminated structure have adhesive force It may be a non-reduced pressure-sensitive adhesive layer.

  Even if the pressure-sensitive adhesive layer in a form in which the pressure-sensitive adhesive layer formed of the radiation-curable pressure-sensitive adhesive is previously cured by the radiation (radiation-irradiated radiation-curable pressure-sensitive adhesive layer) has reduced adhesion by radiation. It is possible to exhibit the tackiness due to the contained polymer component and to exhibit the minimum necessary tackiness for the pressure-sensitive adhesive layer of the dicing tape in the dicing step or the like. When using a radiation-cured radiation-curable pressure-sensitive adhesive layer, the entire pressure-sensitive adhesive layer 12 may be a radiation-cured radiation-curable pressure-sensitive adhesive layer in the surface spreading direction of the pressure-sensitive adhesive layer 12. A part of the radiation-curable pressure-sensitive adhesive layer may be a irradiated radiation-curable pressure-sensitive adhesive layer, and the other part may be a non-irradiated radiation-curable pressure-sensitive adhesive layer.

  As a pressure-sensitive adhesive for forming the pressure-sensitive pressure-sensitive adhesive layer, known pressure-sensitive pressure-sensitive adhesives can be used, and acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives containing an acrylic polymer as a base polymer are preferably used. Can. When the pressure-sensitive adhesive layer 12 contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer is a polymer containing a constituent unit derived from (meth) acrylic acid ester as the largest constituent unit in mass ratio. Is preferred. As said acrylic polymer, the acrylic polymer (for example, 1st acrylic polymer) demonstrated as an acrylic polymer which may be contained in the above-mentioned adhesive layer can be employ | adopted, for example.

  The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive layer 12 may be any known or commonly used adhesion such as a crosslinking accelerator, tackifier, anti-aging agent, coloring agent (pigment, dye etc.) Additives used in the agent layer may be blended. As said coloring agent, the compound colored by irradiation with radiation is mentioned, for example. When it contains a compound that is colored by irradiation, only the irradiated part can be colored. The compound to be colored by the irradiation with radiation is a compound which is colorless or pale before irradiation with radiation but turns to a color by irradiation with radiation, and examples thereof include leuco dyes and the like. The amount of the compound to be colored by the above radiation irradiation is not particularly limited and can be appropriately selected.

  The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but when the pressure-sensitive adhesive layer 12 is a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, the adhesive layer 20 before and after the radiation curing of the pressure-sensitive adhesive layer 12. From the viewpoint of balancing the adhesion to the resin, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 5 to 25 μm.

(Adhesive layer)
The adhesive layer 20 has a function as a thermosetting adhesive for die bonding and an adhesive function for holding a work such as a semiconductor wafer and a frame member such as a ring frame. The adhesive layer 20 can be cut by applying a tensile stress, and is used by being cut by applying a tensile stress.

  The adhesive constituting the adhesive layer 20 and the adhesive layer 20 may contain a thermosetting resin and, for example, a thermoplastic resin as a binder component, or may be reacted with a curing agent to form a bond. You may contain the thermoplastic resin which has a sex functional group. When the adhesive constituting the adhesive layer 20 contains a thermoplastic resin having a thermosetting functional group, the adhesive does not have to contain a thermosetting resin (such as an epoxy resin). The adhesive layer 20 may have a single layer structure or a multilayer structure.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin Examples thereof include thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamide imide resins, and fluorine resins. The thermoplastic resin may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferable because it is easy to secure the bonding reliability of the adhesive layer 20 because it has few ionic impurities and high heat resistance.

  The adhesive layer 20 is a glass transition temperature of the adhesive layer 20 as a main component of the thermoplastic resin, from the viewpoint of coexistence with the adhesion property of the adhesive layer 20 to the ring frame at room temperature and the temperature near it and the prevention of residue at peeling. Preferably contains a polymer of -10 to 10 ° C. The main component of the thermoplastic resin is a resin component that occupies the largest mass ratio in the thermoplastic resin component.

As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) determined based on the following Fox equation can be used. The Fox equation is a relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of a homopolymer for each constituent monomer in the polymer. In the following Fox equation, Tg represents the glass transition temperature (° C.) of a polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C.) of the homopolymer of the monomer i ). For the glass transition temperature of homopolymers, literature values can be used. For example, “New Polymer Bunko 7 Introduction to Synthetic Resins for Paints” (Kitaoka Kyozo, Polymer Journal, 1995) and “Acrylester Catalog (1997) (Mitsubishi Rayon Co., Ltd.) mentions glass transition temperatures of various homopolymers. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be determined by the method specifically described in JP-A-2007-51271.
Fox's formula 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)]

  It is preferable that the said acrylic resin contains the structural unit derived from hydrocarbon group containing (meth) acrylic acid ester as a largest structural unit by mass ratio. The hydrocarbon group-containing (meth) acrylic acid ester is, for example, a hydrocarbon group-containing (meth) acrylic acid ester exemplified as a hydrocarbon group-containing (meth) acrylic acid ester that forms an acrylic polymer that can be contained in the above-mentioned pressure-sensitive adhesive layer Meta) acrylic acid ester is mentioned.

  The said acrylic resin may contain the structural unit derived from the other monomer component copolymerizable with hydrocarbon group containing (meth) acrylic acid ester. As said other monomer component, functional group containing functional groups, such as a carboxy group containing monomer, an acid anhydride monomer, a hydroxyl group containing monomer, a glycidyl group containing monomer, a sulfonic acid group containing monomer, a phosphoric acid group containing monomer, acrylamide, acrylonitrile etc. are mentioned, for example. Monomers, various polyfunctional monomers and the like can be mentioned, and specifically, those exemplified as other monomer components constituting the acrylic polymer which can be contained in the above-mentioned pressure-sensitive adhesive layer can be used.

  Among the above, the acrylic resin is preferably an acrylic polymer having a nitrile group (sometimes referred to as a “second acrylic polymer”). In particular, it is preferable that the pressure-sensitive adhesive layer 12 contains a first acrylic polymer and the adhesive layer 20 contains a second acrylic polymer. According to the configuration in which the pressure-sensitive adhesive layer 12 contains the first acrylic polymer and the adhesive layer 20 contains the second acrylic polymer, it is possible to ensure bonding with high shear adhesion between both layers while acting in the laminating direction of both layers Since the interaction can be suppressed, the generation of the floating of the semiconductor chip with the adhesive layer from the adhesive layer can be further suppressed in the expanding step, and a better pickup can be realized in the pickup step. In particular, in the case where the pressure-sensitive adhesive layer and the adhesive layer are laminated by the above-described lamination coating method, the above-described configuration is generally because the bonding interaction acting in the lamination direction between the two layers is likely to be excessive. preferable.

  The second acrylic polymer having a nitrile group preferably contains a structural unit derived from a nitrile group-containing monomer. Examples of nitrile group-containing monomers include acrylonitrile, methacrylonitrile and cyanostyrene.

In the infrared absorption spectrum of the second acrylic polymer having a nitrile group, 2240 cm derived from the nitrile group with respect to the height of a peak (a peak of absorption attributed to C = O stretching vibration) around 1730 cm ⁻¹ derived from a carbonyl group The value of the ratio of the height of the peak near ^-1 (the peak of absorption attributed to C 伸縮 N stretching vibration) is preferably 0.01 or more, more preferably 0.015 or more, and still more preferably 0. .02 or more. The value of the above ratio is preferably 0.1 or less, more preferably 0.09 or less, and still more preferably 0.08 or less. That is, it is preferable that the nitrile group relative content of the second acrylic polymer is set to such an extent that the value of the above ratio falls within such a range. When the value of the ratio is 0.01 or more, a better pickup can be realized in the pickup step. When the value of the above ratio is 0.1 or less, it is possible to further suppress the occurrence of the floating from the pressure-sensitive adhesive layer of the semiconductor chip with an adhesive layer which has been broken in the expanding step.

  When the adhesive layer 20 contains a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting resin. Polyimide resin and the like. The said thermosetting resin may use only 1 type, and may use 2 or more types. An epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like that may cause corrosion of a semiconductor chip to be die-bonded tends to be small. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.

  Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, ortho Examples thereof include cresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, trisglycidyl isocyanurate type and glycidyl amine type epoxy resins. Among them, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type epoxy resins, and tetraphenylolethane type epoxy resins are preferable because they are rich in reactivity with a phenol resin as a curing agent and excellent in heat resistance.

  As a phenol resin which can act as a hardening agent of an epoxy resin, polyoxystyrenes, such as a novolak type phenol resin, resol type phenol resin, polypara oxystyrene, etc. are mentioned, for example. Examples of the novolac type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, nonylphenol novolac resin and the like. The said phenol resin may use only 1 type, and may use 2 or more types. Among them, phenol novolac resin and phenol aralkyl resin are preferable from the viewpoint of improving the connection reliability of the adhesive when used as a curing agent of an epoxy resin as an adhesive for die bonding.

  From the viewpoint of sufficiently advancing the curing reaction of the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin preferably has 0 hydroxyl group in the phenol resin per equivalent of epoxy group in the epoxy resin component. 0.5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents.

  When the adhesive layer 20 includes a thermosetting resin, the content ratio of the thermosetting resin is selected from the viewpoint of causing the adhesive layer 20 to properly exhibit a function as a thermosetting adhesive. 5 to 60 mass% is preferable with respect to the total mass, More preferably, it is 10 to 50 mass%.

  When the adhesive layer 20 includes a thermoplastic resin (for example, a second acrylic polymer) having a thermosetting functional group, for example, a thermosetting functional group-containing acrylic resin can be used as the thermoplastic resin. . The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth) acrylic acid ester as the largest structural unit in mass ratio. The hydrocarbon group-containing (meth) acrylic acid ester is, for example, a hydrocarbon group-containing (meth) acrylic acid ester exemplified as a hydrocarbon group-containing (meth) acrylic acid ester that forms an acrylic polymer that can be contained in the above-mentioned pressure-sensitive adhesive layer Meta) acrylic acid ester is mentioned. On the other hand, as a thermosetting functional group in a thermosetting functional group containing acrylic resin, a glycidyl group, a carboxy group, a hydroxyl group, an isocyanate group etc. are mentioned, for example. Among them, glycidyl group and carboxy group are preferable. That is, as a thermosetting functional group containing acrylic resin, a glycidyl group containing acrylic resin and a carboxy group containing acrylic resin are especially preferable. Moreover, it is preferable to include a curing agent together with the thermosetting functional group-containing acrylic resin, and the curing agent is exemplified as a crosslinking agent which can be included in the above-mentioned radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12, for example. Other things. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, and, for example, various phenol resins described above can be used.

  The epoxy value of the second acrylic polymer that may be contained in the adhesive layer 20 is preferably 0.05 eq / kg or more, more preferably 0.1 eq / kg or more, and still more preferably 0.2 eq / kg or more. In addition, the epoxy value of the second acrylic polymer is preferably 1 eq / kg or less, more preferably 0.9 eq / kg or less. 5-95 mass% is preferable, and, as for the content rate in the adhesive bond layer 20 of such 2nd acrylic polymer of an epoxy value, it is 40-80 mass% more preferably.

  The carboxylic acid value of the second acrylic polymer that may be contained in the adhesive layer 20 is preferably 1 mg KOH / g or more, more preferably 3 mg KOH / g or more, and still more preferably 5 mg KOH / g or more. In addition, the carboxylic acid value of the second acrylic polymer is preferably 20 mg KOH / g or less, more preferably 18 mg KOH / g or less. 5 to 95 mass% is preferable, and, as for the content rate in the adhesive bond layer 20 of such a 2nd acrylic polymer of a carboxylic acid value, it is 40 to 80 mass% more preferably.

  In order to achieve a certain degree of crosslinking for the adhesive layer 20 before being cured for die bonding, for example, reaction with a functional group at the molecular chain end of the above-mentioned resin that may be included in the adhesive layer 20, etc. It is preferable to mix | blend the polyfunctional compound which can be couple | bonded together as a crosslinking component to the resin composition for adhesive layer formation. Such a configuration is preferable from the viewpoint of improving the adhesive properties under high temperature and the viewpoint of improving the heat resistance of the adhesive layer 20. Examples of the crosslinking component include polyisocyanate compounds. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of polyhydric alcohol and diisocyanate. The content of the crosslinking component in the resin composition for forming an adhesive layer is such that the cohesive force of the adhesive layer 20 formed is improved with respect to 100 parts by mass of the resin having the above-mentioned functional group that can react with the crosslinking component and bond. From a viewpoint, 0.05 mass parts or more are preferable, and from a viewpoint of the adhesive force improvement of the adhesive layer 20 formed, 7 mass parts or less are preferable. Moreover, you may use together other polyfunctional compounds, such as an epoxy resin, with a polyisocyanate compound as said bridge | crosslinking component.

  The content ratio of the high molecular weight component in the adhesive layer 20 is preferably 50 to 100% by mass, and more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10000 or more. When the content ratio of the high molecular weight component is in the above range, it is preferable from the viewpoint of achieving coexistence of the adhesion property of the adhesive layer 20 to the ring frame at the room temperature and the temperature near it and the prevention of residue at peeling. The adhesive layer 20 may also contain a liquid resin that is liquid at 23 ° C. When the adhesive layer 20 contains the said liquid resin, 1-10 mass% is preferable, and, as for the content rate of the said liquid resin in the adhesive layer 20, More preferably, it is 1-5 mass%. When the content ratio of the liquid resin is in the above range, it is preferable from the viewpoint of coexistence of the adhesion property of the adhesive layer 20 to the ring frame described later at room temperature and the temperature near it and the prevention of residue during peeling.

  The adhesive layer 20 preferably contains a filler. By blending the filler in the adhesive layer 20, physical properties such as conductivity, thermal conductivity, elastic modulus, and the like of the adhesive layer 20 can be adjusted. As the filler, an inorganic filler and an organic filler can be mentioned, and in particular, an inorganic filler is preferable. As the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystal Besides amorphous silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black, graphite and the like can be mentioned. The filler may have various shapes such as spheres, needles and flakes. As said filler, only 1 type may be used and 2 or more types may be used. From the viewpoint of securing the adhesion of the adhesive layer 20 to the ring frame in the cool expanding step described later, the content of the filler in the adhesive layer 20 is preferably 30% by mass or less, and more preferably 25% by mass or less.

  The average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.005 to 1 μm. The wettability and adhesiveness to adherends, such as a semiconductor wafer, improve more that the said average particle diameter is 0.005 micrometer or more. When the average particle diameter is 10 μm or less, the effect of the filler added for imparting the respective characteristics can be made sufficient, and heat resistance can be secured. In addition, the average particle diameter of a filler can be calculated | required, for example using the particle size distribution analyzer (for example, brand name "LA-910", Horiba, Ltd. make) of a luminosity type | mold.

  The adhesive layer 20 may contain other components as needed. As said other component, a curing catalyst, a flame retardant, a silane coupling agent, an ion trap agent, dye etc. are mentioned, for example. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin and the like. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, hydrous antimony oxide (for example, “IXE? 300” manufactured by Toagosei Co., Ltd.), and zirconium phosphate having a specific structure (eg, "IXE? 100", magnesium silicate (eg "Kyoward 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (eg "Kyoward 700 manufactured by Kyowa Chemical Industry Co., Ltd.), etc. Compounds capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such a compound include triazole compounds, tetrazole compounds and bipyridyl compounds. Among these, triazole compounds are preferable from the viewpoint of the stability of the complex formed with the metal ion. As such triazole compounds, for example, 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-) 5-methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) ) 5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-tert-amylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) benzotriazole, 6- (2) -Benzotriazolyl) -4-tert-octyl-6'-tert-butyl-4'-methyl-2,2'-methylenebi Phenol, 1- (2 ′, 3′-hydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t -Pentyl-6-{(H-benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5-t-butylphenyl) -2H-benzotriazole, C7-C9-alkyl-3- [3 -(2H-benzotriazol-2-yl) -5- (1,1-dimethylethyl) -4-hydroxyphenyl] propion ether, octyl-3- [3-t-butyl-4-hydroxy-5- (5 -Chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2-ethylhexyl-3- [3-t-butyl- -Hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4 -(1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-tert-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-) 3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro- Benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, methyl-3 [3- (2H-benzotriazol-2-yl) -5-t-butyl-4-hydroxyphenyl] propionate and the like can be mentioned. Also, predetermined hydroxyl group-containing compounds such as quinol compounds, hydroxyanthraquinone compounds and polyphenol compounds can be used as the ion trap agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralpine, tannin, gallic acid, methyl gallate, pyrogallol and the like. The other additives may be used alone or in combination of two or more.

  The adhesive layer 20 preferably has an adhesive strength to SUS of 0.1 to 20 N / 10 mm, more preferably 0.5 to 20 N at a temperature of 23 ° C., a peeling speed of 300 mm / min, and an angle of 180 °. It is 15 N / 10 mm, more preferably 1 to 12 N / 10 mm. When the ring frame is attached to the adhesive layer 20 in the expanding step when the adhesive strength is 0.1 N / 10 mm or more, the adhesion between the adhesive layer 20 and the ring frame is improved, and in the expanding step, dicing is performed using the ring frame. The die bond film X can be held well. When the ring frame is attached to the adhesive layer 20 in the expanding step when the adhesive strength is 20 N / 10 mm or less, peeling of the dicing die-bonding film X from the ring frame is facilitated. The adhesion to SUS can be measured using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation). It is preferable that the sample piece to be subjected to the test is a test piece of a size of width 50 mm × length 120 mm.

  The adhesive layer 20 preferably has a storage elastic modulus at 23 ° C. of 100 to 4000 MPa, more preferably 300 to 3000 MPa, and still more preferably 500 to 2000 MPa. When the ring frame is attached to the adhesive layer 20 in the expanding step when the storage elastic modulus is 100 MPa or more, peeling of the dicing die bond film X from the ring frame is facilitated. When the ring frame is attached to the adhesive layer 20 in the expanding step when the storage elastic modulus is 4000 MPa or less, the adhesion between the adhesive layer 20 and the ring frame is improved, and in the expanding step, the dicing die bond film X is formed by the ring frame. Can be held well. The storage elastic modulus can be measured using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation). It is preferable that the sample piece to be subjected to the test is a test piece of a size of width 50 mm × length 120 mm.

  The thickness (total thickness in the case of a laminate) of the adhesive layer 20 is not particularly limited, and is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

  In this embodiment, in the in-plane direction D of the dicing die bond film X, the outer peripheral end 20 e of the adhesive layer 20 is 1000 μm or less from the outer peripheral end 11 e of the substrate 11 and the outer peripheral end 12 e of the adhesive layer 12 in the dicing tape 10 , Preferably within a distance of 500 μm. That is, in the film in-plane direction D, the outer peripheral end 20 e of the adhesive layer 20 is between 1000 μm to 1000 μm inside, preferably 500 μm to 500 μm outside with respect to the outer edge 11 e of the substrate 11 And between the inner side 1000 μm and the outer side 1000 μm, preferably between the inner side 500 μm and the outer side 500 μm with respect to the outer peripheral end 12 e of the pressure-sensitive adhesive layer 12. In the configuration in which the dicing tape 10 or the pressure-sensitive adhesive layer 12 and the adhesive layer 20 thereon have substantially the same dimension in the in-plane direction D, the adhesive layer 20 is added to the area for attaching the work It will include the area of frame attachment.

  When the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation-curable pressure-sensitive adhesive layer in the dicing die-bonding film X, the pressure-sensitive adhesive after radiation curing in a T-peel test at a temperature of 23 ° C. and a peeling speed of 300 mm / min. The peel force between the layer 12 and the adhesive layer 20 is preferably 0.06 to 0.25 N / 20 mm, more preferably 0.1 to 0.2 N / 20 mm. The adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon is secured as the peeling force is 0.06 N / 20 mm or more, and the adhesive of the semiconductor chip with the adhesive layer in the expanding step It is possible to further suppress the occurrence of floating from the layer. When the peeling force is 0.25 N / 20 mm or less, a better pickup can be realized in the pickup step. In the present specification, the term "radiation-curable pressure-sensitive adhesive layer" means a pressure-sensitive adhesive layer formed from the above-mentioned radiation-curable pressure-sensitive adhesive, and a pressure-sensitive adhesive layer having radiation curing properties and the pressure-sensitive adhesive layer And both of the pressure-sensitive adhesive layer (irradiated radiation-curable pressure-sensitive adhesive layer) after being cured by

  In the dicing die bond film X, the peeling force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 before radiation curing in the T-type peeling test under the conditions of a temperature of 23 ° C. and a peeling speed of 300 mm / min is 2N / 20 mm or more Is preferably, and more preferably 3 N / 20 mm or more. When the expanding step is performed without radiation curing when the peeling force is 2N / 20 mm or more, the adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon is secured. The adhesive layer can be cut more favorably while suppressing the occurrence of the floating of the semiconductor chip with an adhesive layer from the adhesive layer in the expanding step. Moreover, the said peeling force is 20 N / 20 mm or less, for example, Preferably it is 10 N / 20 mm or less. The term "before radiation curing" refers to a state in which the pressure-sensitive adhesive layer is not cured by radiation irradiation, and includes the case where the pressure-sensitive adhesive layer 12 is not a radiation-curable pressure-sensitive adhesive layer.

The T-type peeling test is performed using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The sample piece to be subjected to the test can be produced as follows. First, when the pressure-sensitive adhesive layer 12 is obtained before radiation curing and after radiation curing, ultraviolet light of 350 mJ / cm ² is applied to the pressure-sensitive adhesive layer 12 from the substrate 11 side in the dicing die bond film X The irradiation is performed to cure the pressure-sensitive adhesive layer 12. Next, a backing tape (trade name "BT-315", manufactured by Nitto Denko Corporation) is bonded to the adhesive layer 20 side of dicing die bond film X, and then a test piece with a size of width 50 mm × length 120 mm is cut out. .

  In the dicing die-bonding film X, the difference between the surface roughness Ra of the pressure-sensitive adhesive layer 12 and the surface roughness Ra of the adhesive layer 20 at the contact surface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20, that is, [(adhesive layer 20 The absolute value of the surface roughness Ra of the pressure-sensitive adhesive layer 12 at the contact surface with-the surface roughness Ra of the adhesive layer 20 at the contact surface with the pressure-sensitive adhesive layer 12 is preferably 100 nm or less. The adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon can be further improved as the difference in the surface roughness Ra is 100 nm or less, and the semiconductor chip with the adhesive layer in the expanding step Generation of partial peeling from the pressure-sensitive adhesive layer, that is, floating can be further suppressed. The surface roughness Ra of the pressure-sensitive adhesive layer 12 and the surface roughness Ra of the adhesive layer 20 on the contact surface between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 are, for example, adhesion with the pressure-sensitive adhesive layer 12 in the dicing die bond film X Of the surface of the adhesive layer 12 on the side where the adhesive layer 20 was laminated and the surface on the side where the adhesive layer 12 of the adhesive layer 20 was laminated on the surface of the adhesive layer 12 Can be obtained by measuring.

  The dicing die bond film X may have a separator S as shown in FIG. Specifically, each dicing die bond film X may be in the form of a sheet having a separator S, or the separator S may be long and a plurality of dicing die bond films X may be disposed thereon. The separator S may be wound into a roll form. The separator S is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die bond film X, and is separated from the film when using the dicing die bond film X. Examples of the separator S include plastic films and papers coated on the surface with a release agent such as polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, fluorine-based release agent, long-chain alkyl acrylate release agent, etc. . The thickness of the separator S is, for example, 5 to 200 μm.

  The dicing die bond film X which is one embodiment of the dicing die bond film of the present invention is manufactured, for example, as follows.

  First, as shown to Fig.3 (a), adhesive film 20 'is produced on separator S. As shown in FIG. The adhesive film 20 ′ is a long film to be processed and formed into the above-described adhesive layer 20. In preparation of adhesive film 20 ', first, the composition (adhesive composition) which forms the adhesive layer 20 containing resin, a filler, a curing catalyst, a solvent, etc. is produced. Next, the adhesive composition is coated on the separator to form an adhesive composition layer. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating. Next, in the adhesive composition layer, it is solidified by desolvation, curing or the like as necessary. The desolvation is performed, for example, at a temperature of 70 to 160 ° C. for 1 to 5 minutes. Adhesive film 20 'can be produced on separator S as mentioned above.

  Next, as shown in FIG. 3B, the pressure-sensitive adhesive layer 12 'is laminated on the adhesive film 20'. The pressure-sensitive adhesive layer 12 ′ is to be processed and formed into the above-described pressure-sensitive adhesive layer 12. In the formation of the pressure-sensitive adhesive layer 12 ′, first, a composition (pressure-sensitive adhesive composition) for forming a pressure-sensitive adhesive layer, including a pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 12 and a solvent, is coated on the adhesive film 20 ′. Then, a pressure-sensitive adhesive composition layer is formed. As a coating method of an adhesive composition, roll coating, screen coating, gravure coating etc. are mentioned, for example. Next, in the pressure-sensitive adhesive composition layer, it is solidified by desolvation, curing or the like as necessary. The desolvation is performed, for example, at a temperature of 80 to 150 ° C. for 0.5 to 5 minutes. The adhesive film 20 ′ processed and formed into the adhesive layer 20 and the pressure-sensitive adhesive layer 12 ′ processed and formed into the pressure-sensitive adhesive layer 12 can be formed by such a lamination coating method.

Next, as shown in FIG. 3 (c), the base 11 'is pressure bonded onto the pressure-sensitive adhesive layer 12'. The base 11 ′ is to be processed and formed into the base 11 described above. The resin base 11 'is manufactured by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, and the like. be able to. The film after film formation and the substrate 11 'are subjected to surface treatment as required. In this step, the bonding temperature is, for example, 30 to 50 ° C., preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. Thereby, a long-sized laminated sheet body having a laminated structure of the separator S, the adhesive film 20 ′, the pressure-sensitive adhesive layer 12 ′, and the base 11 ′ is obtained. When the pressure-sensitive adhesive layer 12 ′ is a radiation-curable pressure-sensitive adhesive layer as described above and the pressure-sensitive adhesive layer 12 ′ is irradiated with radiation such as ultraviolet light after bonding of the adhesive film 20 ′, for example, From the side of ', the adhesive layer 12' is irradiated with radiation such as ultraviolet light. Its dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. The irradiation area is, for example, the entire area formed on the pressure-sensitive adhesive layer 12 to be in close contact with the adhesive layer 20.

  Next, as shown in FIG. 3 (d), the above-mentioned laminated sheet body is processed such that the processing blade is pushed from the side of the base 11 'to the separator S (the cut portion in FIG. 3 (d) Is schematically represented by a thick line). For example, while rotating the laminated sheet in one direction F at a constant speed, it is disposed rotatably around an axis orthogonal to the direction F and a rotating roll with a processing blade with a processing blade for punching processing (shown in FIG. The processing bladed surface (not shown) is brought into contact with the base 11 'side of the laminated sheet with a predetermined pressing force. As a result, the dicing tape 10 (the base 11 and the pressure-sensitive adhesive layer 12) and the adhesive layer 20 are collectively processed and formed, and the dicing die bond film X is formed on the separator S. Thereafter, as shown in FIG. 3E, the material laminated portion around the dicing die bond film X is removed from the separator S.

  As described above, the dicing die bond film X can be manufactured.

[Method of Manufacturing Semiconductor Device]
A semiconductor device can be manufactured using the dicing die bond film of the present invention. Specifically, on the adhesive layer side of the dicing die bond film of the present invention, a step of bonding a semiconductor wafer capable of being singulated to a divided body of a semiconductor wafer including a plurality of semiconductor chips or a plurality of semiconductor chips (“ Step D) and expanding the dicing tape in the dicing die-bonding film of the present invention under relatively low temperature conditions to cut at least the adhesive layer to form a semiconductor chip with an adhesive layer Obtaining the step (may be referred to as "step B") and expanding the dicing tape under relatively high temperature conditions to widen the space between the adhesive layer-attached semiconductor chips ("step C" And the step of picking up the semiconductor chip with an adhesive layer (sometimes referred to as “step D”). The production method, it is possible to manufacture a semiconductor device. 4 to 9 show an embodiment of a method of manufacturing a semiconductor device using the dicing die bond film of the present invention.

  A divided body of a semiconductor wafer including the plurality of semiconductor chips used in step A, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips can be obtained as follows. First, as shown in FIGS. 4A and 4B, the dividing grooves 30a are formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is done. Then, after bonding the wafer processing tape T1 having the adhesive surface T1a to the second surface Wb side of the semiconductor wafer W, the first semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30a of a predetermined depth is formed on the surface Wa side using a rotating blade such as a dicing apparatus. The dividing groove 30a is an air gap for separating the semiconductor wafer W into semiconductor chip units (in FIGS. 4 to 6, the dividing groove 30a is schematically represented by a thick line).

  Next, as shown in FIG. 4C, bonding of the wafer processing tape T2 having the adhesive surface T2a to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W And peeling.

  Next, as shown in FIG. 4D, in a state where the semiconductor wafer W is held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. Process (wafer thinning process). Grinding can be performed using a grinding apparatus equipped with a grinding wheel. In the present embodiment, the semiconductor wafer 30A that can be singulated into the plurality of semiconductor chips 31 is formed by this wafer thinning step. Specifically, the semiconductor wafer 30A has a portion (connection portion) in which the portion to be singulated into the plurality of semiconductor chips 31 in the wafer is connected on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. It is.

(Step A)
In step A, on the adhesive layer 20 side of the dicing die bond film X, a semiconductor wafer which can be singulated is attached to a divided body of a semiconductor wafer including a plurality of semiconductor chips or a plurality of semiconductor chips.

In one embodiment of step A, as shown in FIG. 5A, the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bond film X. Thereafter, as shown in FIG. 5B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die bond film X is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is attached to the adhesive layer 20 in place of the above-described radiation irradiation in the manufacturing process of the dicing die bond film X. After the alignment, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet light from the side of the substrate 11. Irradiation dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. The region (irradiated region R shown in FIG. 1) where the irradiation as the adhesive force reducing measure of the pressure-sensitive adhesive layer 12 is performed in the dicing die bond film X is, for example, the peripheral edge thereof in the adhesive layer 20 bonding region in the pressure-sensitive adhesive layer 12 This is an area excluding parts.

(Step B)
In step B, the dicing tape 10 in the dicing die bond film X is expanded under relatively low temperature conditions, and at least the adhesive layer 20 is cut to obtain a semiconductor chip with an adhesive layer.

  In one embodiment in the step B, first, after the ring frame 41 is attached on the adhesive layer 12 of the dicing tape 10 in the dicing die bond film X, as shown in FIG. 6A, the semiconductor wafer 30A is involved. The dicing die bond film X is fixed to the holder 42 of the expanding device.

  Next, a first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 6B, and the semiconductor wafer 30A is separated into a plurality of semiconductor chips 31. The adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer. In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side of the dicing die bond film X in the figure and raised, and the dicing die bond film The X dicing tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expanding is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa occurs in the dicing tape 10. The temperature conditions in the cool expanding step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed to raise the push-up member 43) in the cool expanding step is preferably 0.1 to 100 mm / sec. Further, the amount of expansion in the cool expanding step is preferably 3 to 16 mm.

  In the process B, when the semiconductor wafer 30A that can be singulated for a plurality of semiconductor chips is used, cutting occurs in a thin and fragile part of the semiconductor wafer 30A and singulation to the semiconductor chip 31 occurs. At the same time, in step B, in the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region in which each semiconductor chip 31 is in close contact A tensile stress generated in the dicing tape 10 acts on a portion of the dividing groove between the portions 31 positioned in the vertical direction in the drawing without any deformation suppressing action. As a result, in the adhesive layer 20, a portion located in the vertical direction of the dividing groove between the semiconductor chips 31 is cut. After cutting by expansion, as shown in FIG. 6C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

(Step C)
In step C, the dicing tape 10 is expanded under relatively high temperature conditions to widen the distance between the adhesive layer-attached semiconductor chips.

  In one embodiment of step C, first, the second expanding step (normal temperature expanding step) under relatively high temperature conditions is performed as shown in FIG. Increase the distance (distance). In step C, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die bond film X is expanded. The temperature conditions in the second expanding step are, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (speed to raise the push-up member 43) in the second expanding step is, for example, 0.1 to 10 mm / second, preferably 0.3 to 1 mm / second. Moreover, the expand amount in a 2nd expand process is 3-16 mm, for example. In the process C, the separation distance of the adhesive layer-provided semiconductor chip 31 is increased to such an extent that the semiconductor chip 31 with the adhesive layer can be appropriately picked up from the dicing tape 10 in the pickup process described later. After the separation distance is expanded by expanding, as shown in FIG. 7B, the push-up member 43 is lowered to release the expanded state of the dicing tape 10. From the viewpoint of suppressing the narrowing of the separation distance of the semiconductor chip 31 with an adhesive layer on the dicing tape 10 after releasing the expanded state, a portion outside the holding area of the semiconductor chip 31 in the dicing tape 10 before releasing the expanded state. It is preferable to heat and shrink.

  After the step C, the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with an adhesive layer may have a cleaning step of cleaning using a cleaning liquid such as water as necessary.

(Step D)
In step D (pickup step), the singulated semiconductor chip with an adhesive layer is picked up. In one embodiment of step D, after passing through the above-mentioned cleaning step as necessary, the semiconductor chip 31 with an adhesive layer is picked up from the dicing tape 10 as shown in FIG. For example, with regard to the semiconductor chip 31 with an adhesive layer to be picked up, after raising the pin member 44 of the pickup mechanism in the lower side of the dicing tape 10 in the drawing with the adhesive layer, push it through the dicing tape 10. Do. In the pickup step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

  The method of manufacturing the semiconductor device may include other processes other than the processes A to D. For example, in one embodiment, as shown in FIG. 9A, the semiconductor chip 31 with the adhesive layer picked up is temporarily fixed to the adherend 51 via the adhesive layer 21 (temporary fixing process ). Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. 0.2 MPa or more is preferable with respect to the adherend 51, and, as for the shear adhesive force in 25 degreeC at the time of temporary adhesion of the adhesive bond layer 21, More preferably, it is 0.2-10 MPa. The configuration in which the shear adhesive strength of the adhesive layer 21 is 0.2 MPa or more is a bonding surface between the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in a wire bonding process described later. Thus, wire bonding can be appropriately performed while suppressing the occurrence of shear deformation. The shear adhesive strength at 175 ° C. at the time of temporary adhesion of the adhesive layer 21 is preferably 0.01 MPa or more, and more preferably 0.01 to 5 MPa with respect to the adherend 51.

  Next, as shown in FIG. 9B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected through the bonding wire 52 ((b)) Wire bonding process). The connection between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 can be realized by ultrasonic welding accompanied by heating so that the adhesive layer 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire or the like can be used. The wire heating temperature in wire bonding is 80-250 degreeC, for example, Preferably it is 80-220 degreeC. The heating time is a few seconds to a few minutes.

  Next, as shown in FIG. 9C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wires 52 on the adherend 51 (sealing process). In the sealing step, thermal curing of the adhesive layer 21 proceeds. In the sealing step, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. For example, an epoxy resin can be used as a constituent material of the sealing resin 53. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 53 does not proceed sufficiently in the sealing step, a post curing step for completely curing the sealing resin 53 is performed after the sealing step. Even if the adhesive layer 21 is not completely thermally cured in the sealing step, complete thermal curing of the adhesive layer 21 together with the sealing resin 53 is possible in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

  In the above embodiment, as described above, after temporarily bonding the semiconductor chip 31 with the adhesive layer to the adherend 51, the wire bonding step is performed without completely thermosetting the adhesive layer 21. Instead of such a configuration, in the method of manufacturing the semiconductor device, after temporarily bonding the semiconductor chip 31 with the adhesive layer to the adherend 51, the adhesive layer 21 is thermally cured and then the wire bonding step is performed. May be

  In the semiconductor device manufacturing method, as another embodiment, the wafer thinning step shown in FIG. 10 may be performed instead of the wafer thinning step described above with reference to FIG. After passing through the process described above with reference to FIG. 4C, in the wafer thinning process shown in FIG. 10, with the semiconductor wafer W held by the wafer processing tape T2, the wafer has a predetermined thickness. The semiconductor wafer division body 30B including the plurality of semiconductor chips 31 and held by the wafer processing tape T2 is formed by thinning through grinding from the second surface Wb. In the wafer thinning step, a method (first method) of grinding the wafer may be employed until the dividing groove 30a is exposed to the second surface Wb side, or the dividing groove 30a is reached from the second surface Wb side A method of forming the semiconductor wafer divided body 30B by causing the wafer to be ground to a greater degree and then causing a crack between the divided groove 30a and the second surface Wb by the action of the pressing force from the rotary grinding wheel to the wafer Method) may be adopted. Depending on the method employed, the depth from the first surface Wa of the dividing groove 30a formed as described above with reference to FIGS. 4A and 4B is appropriately determined. In FIG. 10, the dividing grooves 30a subjected to the first method, or the dividing grooves 30a subjected to the second method and the cracks connected thereto are schematically represented by thick lines. In the method of manufacturing the semiconductor device, in step A, the semiconductor wafer segments 30B thus produced as semiconductor wafer segments are used instead of the semiconductor wafer 30A, and the respective components described above with reference to FIGS. A process may be performed.

  11A and 11B show a first expanding step (cool expanding step) performed after step B in the embodiment, that is, after bonding the semiconductor wafer divided bodies 30B to the dicing die bond film X. In step B in this embodiment, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side of the dicing die bond film X in the figure and raised to bond the semiconductor wafer segments 30B. The dicing tape 10 of the dicing die bond film X is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divisions 30B. This expanding is performed under the condition that a tensile stress in the range of 5 to 28 MPa, preferably 8 to 25 MPa is generated in the dicing tape 10, for example. The temperature conditions in the cool expanding step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed to raise the push-up member 43) in the cool expanding step is preferably 1 to 400 mm / sec. Further, the amount of expansion in the cool expanding step is preferably 50 to 200 mm. By such a cool expanding process, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. Specifically, in the cool expanding step, in the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, deformation occurs in each region in which the semiconductor chips 31 of the semiconductor wafer divisions 30B are in close contact While being suppressed, the tensile stress generated in the dicing tape 10 acts on the portion of the dividing groove 30a between the semiconductor chips 31 which is located in the vertical direction in the drawing without such a deformation suppressing action. As a result, in the adhesive layer 20, the portion of the dividing groove 30a between the semiconductor chips 31 in the vertical direction in the figure is cut.

  In the method of manufacturing a semiconductor device, as still another embodiment, a semiconductor wafer 30C manufactured as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in the step A. .

In the embodiment, as shown in FIGS. 12A and 12B, first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is done. Then, after bonding the wafer processing tape T3 having the adhesive surface T3a to the first surface Wa side of the semiconductor wafer W, with the semiconductor wafer W held by the wafer processing tape T3, the light condensing point inside the wafer The semiconductor laser W is irradiated with the combined laser beam from the side opposite to the wafer processing tape T3 along the planned dividing line from the side opposite to the wafer processing tape T3 to modify the semiconductor wafer W due to ablation by multiphoton absorption. Region 30b is formed. The modified region 30 b is a weakened region for separating the semiconductor wafer W into semiconductor chip units. The method of forming the modified region 30b on the planned dividing line by laser beam irradiation in the semiconductor wafer is described in detail, for example, in JP-A-2002-192370, but the laser beam irradiation condition in the embodiment is, for example, It adjusts suitably within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser pumped Nd: YAG laser Wavelength 1064 nm
Laser beam spot cross section 3.14 × 10 ^-8 cm ²
Oscillation mode Q switch pulse Repetition frequency 100kHz or less Pulse width 1μs or less Output 1mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized (B) focusing lens Magnification: up to 100 times NA 0.55
Transmittance 100% or less for laser light wavelength (C) Movement speed of the processing table on which the semiconductor substrate is mounted 280 mm / s or less

  Next, as shown in FIG. 12C, while the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. As a result, a semiconductor wafer 30C that can be singulated into a plurality of semiconductor chips 31 is formed (wafer thinning step). In the method of manufacturing a semiconductor device, in the step A, the semiconductor wafer 30C thus manufactured as a semiconductor wafer which can be singulated is used in place of the semiconductor wafer 30A and is described above with reference to FIGS. Each step may be performed.

  FIG. 13A and FIG. 13B show a first expanding step (cool expanding step) performed after bonding the semiconductor wafer 30C to the dicing die bond film X in step B in the embodiment. In the cool expanding step, the hollow cylindrical push-up member 43 provided in the expanding device is brought into contact with the dicing tape 10 at the lower side of the dicing die bond film X in the figure and raised, and the dicing die bond film bonded to the semiconductor wafer 30C The X dicing tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expanding is performed under the condition that a tensile stress in the range of 5 to 28 MPa, preferably 8 to 25 MPa is generated in the dicing tape 10, for example. The temperature conditions in the cool expanding step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed to raise the push-up member 43) in the cool expanding step is preferably 1 to 400 mm / sec. Further, the amount of expansion in the cool expanding step is preferably 50 to 200 mm. By such a cool expanding process, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. Specifically, in the cool expanding step, a crack is formed in the fragile modified region 30 b in the semiconductor wafer 30 C, and singulation to the semiconductor chip 31 occurs. At the same time, in the cool expanding step, in the adhesive layer 20 in intimate contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region in which the semiconductor chips 31 in the semiconductor wafer 30C are in intimate contact On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the crack formation portion of the wafer which is located in the vertical direction in the drawing without such a deformation suppressing action. As a result, in the adhesive layer 20, the portion located in the vertical direction in the figure of the crack formation portion between the semiconductor chips 31 is cut.

  In the method for manufacturing a semiconductor device, the dicing die bond film X can be used for the purpose of obtaining a semiconductor chip with an adhesive layer as described above, but a plurality of semiconductor chips are stacked to perform three-dimensional mounting. It can also be used in applications for obtaining semiconductor chip with adhesive layer in the case. A spacer may be interposed between the semiconductor chips 31 in such a three-dimensional mounting together with the adhesive layer 21 or may not be interposed.

  EXAMPLES The present invention will be described in more detail by way of examples, but the present invention is not limited to these examples.

Example 1
(Adhesive layer)
Acrylic polymer A ₁ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, the above-mentioned second acrylic polymer, weight average molecular weight is 1.2 million, glass transition temperature is 0 ° C., epoxy value Is 54 parts by mass of 0.4 eq / kg, 3 parts by mass of solid phenol resin (trade name “MEHC-7851 SS”, solid at 23 ° C., manufactured by Meiwa Kasei Co., Ltd.), liquid phenol resin (trade name “MEH-8000H” , 3 parts by mass of liquid at 23 ° C., manufactured by Meiwa Kasei Co., Ltd., and 40 parts by mass of silica filler (trade name “SO-C2”, average particle diameter is 0.5 μm, manufactured by Admatex Co., Ltd.) The mixture was added to and mixed, and the concentration was adjusted so that the viscosity at room temperature was 700 mPa · s, to obtain an adhesive composition. Next, an adhesive composition is applied using an applicator on a silicone release-treated surface of a PET separator (38 μm thick) having a silicone release-treated side to form a coating film, The membrane was desolvated at 130 ° C. for 2 minutes. As described above, a 10 μm thick adhesive layer in Example 1 was produced on the PET separator. The composition of the adhesive layer in Example 1 is shown in Table 1 (In Table 1, the units of each numerical value representing the composition of the composition are the relative “mass” in the composition except for the numerical values related to the MOI described later Section).

(Pressure-sensitive adhesive layer)
100 mol parts of lauryl acrylate (LA), 20 mol parts of 2-hydroxyethyl acrylate (2 HEA), and 100 mol parts of these monomer components in a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer, and a stirring device A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours under a nitrogen atmosphere (polymerization reaction). This gave a polymer solution containing an acrylic polymer P _1. For acrylic polymers P ₁ of the polymer solution, the weight average molecular weight (Mw) of 460,000, a glass transition temperature of 9.5 ° C., the molar ratio of the constituent unit derived from LA for constitutional unit derived 2HEA is 5 Next, a polymer solution containing the acrylic polymer P _1, 2-meth and methacryloyloxyethyl isocyanate (MOI), the mixture containing the dibutyltin dilaurate as a catalyst for addition reaction at room temperature for 48 hours under air atmosphere Stir (addition reaction). In the reaction solution, the amount of the MOI is 16 mol parts with respect to the lauryl acrylate to 100 parts by mol, constitutional units derived from 2HEA in the acrylic polymer P ₁ or the molar ratio of the MOI amount to the total amount of the hydroxyl group Is 0.8. Further, in the reaction solution, the amount of dibutyltin dilaurate is 0.01 parts by mass of the acrylic polymer P ₁ 100 parts by weight. By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in a side chain (the above-described first acrylic polymer containing a structural unit derived from an unsaturated functional group-containing isocyanate compound) was obtained. Next, 1 part by mass of a polyisocyanate compound (trade name "Corronate L", manufactured by Tosoh Corp.) and 2 parts by mass of a photopolymerization initiator (per 100 parts by mass of acrylic polymer P ₂ ) are added to the polymer solution. The mixture is added and mixed with a trade name “IRGACURE 127” (manufactured by BASF), and toluene is added to dilute the mixture so that the viscosity of the mixture at room temperature is 500 mPa · s, and the pressure-sensitive adhesive composition is Obtained. Next, an adhesive composition is applied using an applicator on the above-mentioned adhesive layer formed on the PET separator to form a coating, and the coating is desolvated at 130 ° C. for 2 minutes. Then, a 10 μm thick adhesive layer was formed on the adhesive layer. Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0104", thickness 130 μm, manufactured by Kurashiki Spinning Co., Ltd.) on the exposed surface of this adhesive layer Were bonded at room temperature. Next, a punching process was performed in which the processing blade was pushed from the side of the EVA base material to the separator. Thereby, a disk-shaped dicing die-bonding film with a diameter of 370 mm having a laminated structure of EVA base material / pressure-sensitive adhesive layer / adhesive layer was formed on the separator. Next, ultraviolet rays were irradiated from the side of the EVA substrate to the pressure-sensitive adhesive layer in the dicing tape. In ultraviolet irradiation, a high pressure mercury lamp was used, and the irradiation integrated light amount was 350 mJ / cm ² . As described above, a dicing die-bonding film of Example 1 having a laminated structure including a dicing tape (EVA base / adhesive layer) and an adhesive layer was produced.

Examples 2 and 3
In the same manner as the dicing die-bonding film of Example 1 except that the compounding amount of MOI is changed to 16 mol parts to 12 mol parts (Example 2) or 8 mol parts (Example 3) in the formation of the pressure-sensitive adhesive layer. The dicing die-bonding films of Examples 2 and 3 were produced.

Example 4
(Pressure-sensitive adhesive layer)
100 mol parts of 2-ethylhexyl acrylate (2EHA), 20 mol parts of 2-hydroxyethyl acrylate (2HEA), and these monomers in a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer and a stirrer A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours under a nitrogen atmosphere (polymerization reaction) . This gave a polymer solution containing an acrylic polymer P _3. For acrylic polymers P ₃ of the polymer solution, the weight average molecular weight (Mw) of 400,000, a glass transition temperature of 9.5 ° C., the molar ratio of the constituent unit derived from 2EHA for constitutional unit derived 2HEA is 5 Next, a polymer solution containing the acrylic polymer P _3, 2-meta and methacryloyloxyethyl isocyanate (MOI), the mixture containing the dibutyltin dilaurate as a catalyst for addition reaction at room temperature for 48 hours under air atmosphere Stir (addition reaction). In the reaction solution, the amount of the MOI is a 16 molar parts per 100 molar parts the 2-ethylhexyl acrylate, in the MOI amount to the total amount of the structural unit or a hydroxyl group derived from 2HEA in the acrylic polymer P ₃ The molar ratio is 0.8. Further, in the reaction solution, the amount of dibutyltin dilaurate is 0.01 parts by mass of the acrylic polymer P ₃ 100 parts by weight. By this addition reaction, a polymer solution containing an acrylic polymer P ₄ having a methacrylate group in a side chain (an acrylic polymer containing a structural unit derived from an unsaturated functional group-containing isocyanate compound) was obtained. Next, 1 part by mass of a polyisocyanate compound (trade name "Corronate L", manufactured by Tosoh Corp.) and 2 parts by mass of a photopolymerization initiator (per 100 parts by mass of acrylic polymer P ₄ ) are added to the polymer solution. The mixture is added and mixed with a trade name “IRGACURE 127” (manufactured by BASF), and toluene is added to dilute the mixture so that the viscosity of the mixture at room temperature is 500 mPa · s, and the pressure-sensitive adhesive composition is Obtained. And the dicing die-bonding film of Example 4 was produced like the dicing die-bonding film of Example 1 except having used the said adhesive composition as an adhesive composition.

Example 5
(Pressure-sensitive adhesive layer)
The pressure-sensitive adhesive composition prepared in Example 4 was coated on a silicone release-treated surface of a PET separator (38 μm thick) having a silicone release-treated surface using a applicator to obtain a coated film. The formed coating was desolvated at 130 ° C. for 2 minutes to form a 10 μm thick pressure-sensitive adhesive layer on the PET separator. Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0104", thickness 130 μm, manufactured by Kurashiki Spinning Co., Ltd.) on the exposed surface of this adhesive layer Were bonded at room temperature. As described above, a dicing tape having a laminated structure of EVA base / adhesive layer was produced.

(Adhesive layer)
The PET separator was peeled off from the dicing tape, and the adhesive layer of the PET separator with an adhesive layer prepared in Example 1 was attached to the exposed adhesive layer. In bonding, the center of the dicing tape and the center of the adhesive layer were aligned. Moreover, the hand roller was used for bonding. Next, a punching process was performed in which the processing blade was pushed from the side of the EVA base material to the separator. Thereby, a disk-shaped dicing die-bonding film with a diameter of 370 mm having a laminated structure of EVA base material / pressure-sensitive adhesive layer / adhesive layer was formed on the separator. Next, ultraviolet rays were irradiated from the side of the EVA substrate to the pressure-sensitive adhesive layer in the dicing tape. In ultraviolet irradiation, a high pressure mercury lamp was used, and the irradiation integrated light amount was 350 mJ / cm ² . As described above, a dicing die-bonding film of Example 5 having a laminated structure including a dicing tape (EVA base / adhesive layer) and an adhesive layer was produced.

Comparative Example 1
A dicing die-bonding film of Comparative Example 1 was produced in the same manner as the dicing die-bonding film of Example 4 except that the compounding amount of MOI was changed to 16 mol parts to 20 mol parts in forming the pressure-sensitive adhesive layer.

<Evaluation>
The following evaluation was performed about the dicing die-bonding film obtained by the Example and the comparative example. The results are shown in Table 1.

(Elastic modulus by nano indentation method)
About each dicing die-bonding film obtained by an example and a comparative example, an adhesive layer is exfoliated from on an adhesive layer, and a nano indenter (brand name "TriboIndenter", HYSITRON Inc. company about the exfoliation side of an adhesive layer. Nanoindentation measurement on the surface of the pressure-sensitive adhesive layer was performed under the following conditions. And the obtained elastic modulus is shown in Table 1.
Working indenter: Berkovich (triangular pyramid)
Measurement method: Single indentation measurement Measurement temperature: 23 ° C
Frequency: 100Hz
Indentation depth setting: 500 nm
Load: 1 mN,
Loading speed: 0.1 mN / s
Unloading speed: 0.1 mN / s
Holding time: 1s

(Surface roughness)
The adhesive layer was peeled off from the pressure-sensitive adhesive layer, and the surface roughness Ra of each of the peeling surfaces of the pressure-sensitive adhesive layer and the adhesive layer was measured for each of the dicing die-bonding films obtained in Examples and Comparative Examples. The surface roughness was measured using a confocal laser microscope (trade name "OPTELICS H300", manufactured by Lasertec Corporation). And each surface roughness Ra and its difference which were obtained are shown in Table 1.

(T-peel test after UV curing)
The peeling force between the pressure-sensitive adhesive layer and the adhesive layer was examined as follows for each dicing die-bonding film obtained in each of the example and the comparative example. First, test pieces were produced from each dicing die bond film. Specifically, a backing tape (trade name “BT-315”, manufactured by Nitto Denko Corporation) is bonded to the adhesive layer side of the dicing die bond film, and the dicing die bond film having the backing tape has a width of 50 mm × length A test piece of 120 mm in size was cut out. And about T-type peeling test using a tensile tester (brand name "Autograph AGS-J", Shimadzu Corp. make) about a test piece, peeling force (N / 20 mm) was measured. In this measurement, the temperature condition was 23 ° C., and the peeling rate was 300 mm / min. The measurement results are shown in Table 1.

(Implementation of expanding process and picking process)
Using the respective dicing die-bonding films obtained in Examples and Comparative Examples, the following bonding process, first expanding process (break expanding process) for cutting, second expanding process (separating) ( The normal temperature expanding step) and the pickup step were performed.

  In the bonding step, the divided semiconductor wafer held by the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) is bonded to the adhesive layer of the dicing die bond film, and then the semiconductor wafer The wafer processing tape was peeled off from the divided body. In bonding, a laminator was used, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C., and the pressure condition was 0.15 MPa. In addition, the semiconductor wafer divided body is formed and prepared as follows. First, about the bare wafer (12 inches in diameter, 780 μm in thickness, manufactured by Tokyo Chemical Industry Co., Ltd.) held with the ring frame on a wafer processing tape (trade name “V12S-R2-P”, manufactured by Nitto Denko Corporation) A split groove (25 μm in width, 50 μm in depth, 6 mm in one section) for singulation by its rotating blade using a dicing apparatus (trade name “DFD6260”, manufactured by Disco Co., Ltd.) from the side of one side thereof A 12 mm grid was formed. Next, a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) is bonded to the dividing groove formation surface, and then the above-mentioned tape for wafer processing (trade name "V12S-R2-P") Was peeled from the wafer. After this, the wafer is ground to a thickness of 20 μm by grinding from the side of the other surface of the wafer (the surface on which the dividing grooves are not formed) using a back grind apparatus (trade name “DGP 8760”, manufactured by Disco Co., Ltd.) The ground surface was mirror-finished by dry polishing performed using the same apparatus. As described above, the semiconductor wafer divided body (in the state of being held by the wafer processing tape) was formed. The divided semiconductor wafer includes a plurality of semiconductor chips (6 mm × 12 mm).

  The cool expanding process was performed in the cool expanding unit using a die separation apparatus (trade name "Die Separator DDS 3200", manufactured by Disco Co., Ltd.). Specifically, first, in a frame affixing area (around the work affixing area) of the adhesive layer in the above-mentioned dicing die bond film accompanied by a semiconductor wafer division body, a SUS ring frame with a diameter of 12 inches (made by Disco Corporation ) At room temperature. Next, the dicing die bond film was set in the apparatus, and the dicing tape of the dicing die bond film with the semiconductor wafer divided body was expanded by the cool expand unit of the apparatus. In this cool expanding step, the temperature is -15 ° C, the expanding speed is 100 mm / sec, and the expanding amount is 7 mm.

  The normal temperature expanding process was performed in the normal temperature expanding unit using a die separation apparatus (trade name "Die Separator DDS 3200", manufactured by Disco Co., Ltd.). Specifically, the dicing tape of the dicing die-bonding film with the semiconductor wafer divided body subjected to the above-mentioned cool expanding process was expanded by the normal temperature expanding unit of the same apparatus. In this normal temperature expanding step, the temperature is 23 ° C., the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. Thereafter, the heat shrinking treatment was performed on the dicing die bond film which has undergone normal temperature expansion. The processing temperature is 200 ° C., and the processing time is 20 seconds.

  In the pick-up process, using a device having a pick-up mechanism (trade name "Die bonder SPA-300", manufactured by Shinkawa Co., Ltd.), pick-up of the semiconductor chip with adhesive layer separated on dicing tape was tried. . The pickup speed of the pin member is 1 mm / sec, the pushing amount is 2000 μm, and the pickup evaluation number is 5.

  In the above-described process performed using each dicing die bond film obtained in Examples and Comparative Examples, the area of the floating of the semiconductor chip with the adhesive layer from the dicing tape is 5% or less in the cool expanding step. In this case, the floating at break was evaluated as good (○), and when the area of the float was more than 5% and 40% or less, the floating at break was evaluated as good (Δ). Regarding the pickup process, the case where all the semiconductor chips with adhesive layer 5 can be picked up from the dicing tape is evaluated as having good pick-up property (○), and pick-up property is possible when 1 to 4 pieces can be picked up. It evaluated as ((triangle | delta)), and also when it was not possible to pick up any one piece, the pick-up property was evaluated as inferior (x). The evaluation results are shown in Table 1.

  According to the dicing die-bonding film of Examples 1 to 4, in the cool expanding step, the adhesive layer can be satisfactorily cut without causing the semiconductor chip with the adhesive layer to float from the dicing tape, and the pickup In the process, the semiconductor chip with the adhesive layer could be properly picked up.

DESCRIPTION OF SYMBOLS 1 dicing die bond film 10 dicing tape 11 base 11e outer peripheral end 12 adhesive layer 12e outer peripheral end 20, 21 adhesive layer 20 e outer peripheral end W, 30A, 30C semiconductor wafer 30B semiconductor wafer division body 30a division groove 30b reformed region 31 semiconductor Chip

Claims (10)

A dicing tape having a laminated structure including a substrate and an adhesive layer;
And an adhesive layer releasably adhering to the pressure-sensitive adhesive layer in the dicing tape,
The dicing die-bonding film whose elastic modulus at the time of 500 nm indentation by the nanoindentation method on the conditions of temperature 23 degreeC and frequency 100 Hz of the said adhesive layer surface is 0.1-20 Mpa.   The pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer, and between the pressure-sensitive adhesive layer and the adhesive layer after radiation curing in a T-peel test under conditions of a temperature of 23 ° C. and a peeling speed of 300 mm / min. The dicing die bond film according to claim 1, wherein the peeling force is 0.06 to 0.25 N / 20 mm.   The peel force between the pressure-sensitive adhesive layer and the adhesive layer before radiation curing in a T-peel test under conditions of a temperature of 23 ° C. and a peel speed of 300 mm / min is 2N / 20 mm or more. The dicing die-bonding film as described in 2.   The difference between the surface roughness Ra of the surface of the pressure-sensitive adhesive layer and the surface roughness Ra of the surface of the adhesive layer at the contact surface of the pressure-sensitive adhesive layer and the adhesive layer is 100 nm or less. The dicing die bond film according to any one of the items.   The pressure-sensitive adhesive layer contains a first acrylic polymer containing a structural unit derived from a (meth) acrylate having an alkyl group having 10 or more carbon atoms and a structural unit derived from 2-hydroxyethyl (meth) acrylate. The dicing die-bonding film of any one of -4.   In the first acrylic polymer, the molar ratio of a (meth) acrylate-derived structural unit having an alkyl group having 10 or more carbon atoms to a 2-hydroxyethyl (meth) acrylate-derived structural unit is 1 to 40. The dicing die bond film according to claim 5.   2-hydroxyethyl (meth) of the structural unit derived from the unsaturated functional group-containing isocyanate compound in the first acrylic polymer, containing the structural unit derived from the unsaturated functional group-containing isocyanate compound The dicing die-bonding film of Claim 5 or 6 whose molar ratio with respect to the structural unit derived from an acrylate is 0.1-2.   8. The adhesive layer according to any one of claims 1 to 7, wherein the adhesive layer has an adhesive strength to SUS of 0.1 to 20 N / 10 mm under conditions of a temperature of 23 ° C, a peeling speed of 300 mm / min, and an angle of 180 °. Dicing die bond film as described.   The dicing die bond film according to any one of claims 1 to 8, wherein the adhesive layer has a storage elastic modulus at 23 ° C of 100 to 4000 MPa.   The dicing die-bonding film according to any one of claims 1 to 9, wherein the outer peripheral end of the adhesive layer is at a distance within 1000 μm from the outer peripheral end of the pressure-sensitive adhesive layer in the film in-plane direction.

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