TW201908438A - Dicing tape, dicing die attach film, and method of manufacturing semiconductor device for breaking a die attach film on a dicing tape favorably in an expanding step performed using a dicing die attach film - Google Patents

Abstract

The present invention aims to provide a dicing tape for breaking a die attach film (DAF) on a dicing tape favorably in an expanding step performed using a dicing die attach film (DDAF) to obtain a semiconductor chip with a DAF and to suppress floating and peeling from the dicing tape, and also provide a DDAF and a semiconductor device manufacturing method. The dicing tape 10 of the present invention may exhibit tensile stress in a range of 15 to 32 MPa with a strain value of at least 5 to 30% during a tensile test (a test piece width of 20 mm, initial chuck distance of 100 mm). The DDAF of the present invention includes a dicing tape 10 and a DAF 20 on the adhesive layer 12 thereof. The semiconductor device manufacturing method of the present invention includes the step of expanding the dicing tape 10 under the condition that a tensile stress in the range of 15 to 32 MPa is generated after attaching a semiconductor wafer or its divided body to the DAF 20 side of DDAF.

Description

Tangent ribbon, diced crystal film, and semiconductor device manufacturing method

The present invention relates to a dicing tape and a diced die film which can be used in a manufacturing process of a semiconductor device, and a method of manufacturing a semiconductor device.

In the manufacturing process of a semiconductor device, when a semiconductor wafer having a bonding film of a size corresponding to a wafer for die bonding, that is, a semiconductor wafer having a die-bonding film, is obtained, a crystal-cut film is used. The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed, and has, for example, a dicing tape including a substrate and an adhesive layer, and a die-bonding film which is detachably adhered to the side of the adhesive layer.

As one of methods for obtaining a semiconductor wafer with a die-bonding film using a diced die film, a method of cutting a die film by expanding a dicing band in a diced die film is known. In this method, first, a semiconductor wafer is bonded to a die film of a diced die film. The semiconductor wafer is processed, for example, in such a manner as to be singulated into a plurality of semiconductor wafers together with the die bond film. Next, in order to form the die-cut film by forming a plurality of adhesive film films which are respectively adhered to the semiconductor wafer from the adhesive film on the dicing tape, the dicing tape of the dicing die film is expanded. In the expanding step, the semiconductor wafer on the die film is also cut at a portion corresponding to the cut portion in the die film, and the semiconductor wafer is formed into a single piece on the die-cut die or the dicing tape. A plurality of semiconductor wafers. Next, for example, after the cleaning step, each semiconductor wafer is picked up from the dicing tape together with the die film of the corresponding size of the wafer to which it is attached. In this way, a semiconductor wafer with a die attach film is obtained. The semiconductor wafer with the adhesion film is adhered to the adherend such as a mounting substrate via a die bond film via a die bond film. A technique for obtaining a semiconductor wafer having a die-bonding film by using a dicing die-bonding film is described, for example, in Patent Documents 1 to 3 below. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. 2016-115.

[The problem that the invention wants to solve]

In the above expansion step, when the cleavage force acts on the etched film of the dicing die in the dicing die, the part of the predetermined part of the cleavage film is not cut. situation. Moreover, in the semiconductor wafer with the adhesion film on the dicing tape of the expansion step, the end portion of the die film is partially peeled off from the dicing tape (ie, the semiconductor with the adhesion film is produced). The case where the end of the wafer is swelled from the dicing tape) or the semiconductor wafer or its die-bonding film is completely peeled off from the dicing tape. The local peeling, that is, the bulging, may occur as a cause of undesired peeling of the semiconductor wafer with the adhesion film from the dicing tape in the cleaning step or the like after the expansion step. The local peeling or the occurrence of the bulge may also be the cause of poor pickup in the picking step. When the wiring structure formed in advance on the surface of the semiconductor wafer or the surface of the semiconductor wafer is multi-layered, the above-mentioned bulging or peeling is more likely to occur due to the difference in thermal expansion coefficient between the resin material in the wiring structure and the semiconductor material of the semiconductor wafer body. .

The present invention has been conceived on the basis of the above circumstances, and an object thereof is to provide a method suitable for forming a die-cut film adhered to a dicing tape well and suppressing a self-cutting ribbon in an expanding step using a diced die-bonding film. A dicing tape, a diced die-bonding film, and a method of manufacturing a semiconductor device. [Technical means to solve the problem]

According to a first aspect of the present invention, a dicing tape is provided. The dicing tape has a laminated structure including a substrate and an adhesive layer, and can be in a range of 5 to 30% in a tensile test of a dicing tape test piece having a width of 20 mm at an initial inter-clip distance of 100 mm. At least a portion of the strain value exhibits a tensile stress in the range of 15 to 32 MPa. At least a portion of the strain value in the range of 5 to 30% includes a strain value in the range of 5 to 30%. The dicing tape of such a configuration can be used to obtain a semiconductor wafer with a die-bonding film in the manufacturing process of a semiconductor device in a form in which a die-bonding film is adhered to the side of the adhesive layer.

In the manufacturing process of the semiconductor device, as described above, in the case of obtaining a semiconductor wafer with a die-bonding film, there is a case where an expansion step using a diced die film is performed. The present inventors have found that in the expansion step, the tensile stress generated by the expanded dicing ribbon in the dicing die-bonding film is 15 MPa or more and 32 MPa or less is suitable for self-expanding the tensile stress as a sufficient cutting force. The cleavage zone acts on the die bond film to cut the die film, and is suitable for preventing the residual stress of the self-expanding dicing band acting on the diced die film from being excessive, thereby suppressing the film or attaching the film The semiconductor wafer is embossed or stripped from the dicing tape. For example, it is as shown in the examples and comparative examples mentioned later. Further, in the dicing tape according to the first aspect of the present invention, the tensile stress in the range of 15 to 32 MPa as described above can be expressed by at least a part of the strain value in the range of 5% or more and 30% or less. A strain value of 5% or more is suitable for ensuring a sufficient stretch length for cutting the die film, and a strain value of 30% or less is suitable for avoiding an excessively large stretch length in the expansion step, thereby performing efficiently Expansion steps. The dicing tape is suitable for the expansion step of expanding in the form of a die-bonding film on the side of the adhesive layer for expanding tensile stress in the range of 15 to 32 MPa, and therefore suitable In the expanding step, the die film on the dicing tape is well cut, and the self-cutting band is lifted or peeled off.

The dicing tape according to the first aspect of the present invention can exhibit a strain value of tensile stress in the range of 15 to 32 MPa in the above tensile test as described above as 5% or more, but the present dicing tape is The aspect of the adhesive layer is closely adhered to the form of the adhesive film for the purpose of expanding the step, and in the above tensile test, the tensile stress in the range of 15 to 32 MPa can be exhibited. The strain value is preferably 6% or more, more preferably 7% or more, still more preferably 8% or more. Further, in the above tensile test, the dicing tape of the first aspect of the present invention can exhibit a tensile stress within a range of 15 to 32 MPa, and the strain value is 30% or less as described above. It is possible to exhibit a range of 15 to 32 MPa in the above tensile test in the case where the form of the adhesive film is adhered to the side of the adhesive layer for use in the expansion step to prevent the required stretching length from becoming excessive. The strain value of the tensile stress inside is preferably 20% or less, more preferably 17% or less, still more preferably 15% or less, still more preferably 13% or less.

The dicing tape of the first aspect of the present invention can exhibit a tensile stress of preferably 20 to 32 MPa in the above tensile test. Such a dicing tape is suitable for use in an expansion step in which a state in which an adhesive film is adhered to the side of the adhesive layer for expansion under a tensile stress in the range of 20 to 32 MPa. In the expansion step, if the tensile stress generated by the expanded cleavage zone in the diced crystal film is more than 15 MPa, the cleavage zone in the self-expansion acts as a cutting force on the crystallization film. The tendency to stretch stress is greater.

In the above tensile test, the lower the temperature condition is, the more the tensile stress is exhibited by the dicing tape or the test piece thereof, and the temperature condition in the tensile test is preferably -15 °C. According to this configuration, the relatively large tensile stress generated by the expanded dicing tape at a temperature of -15 ° C can be used as the cutting force to the die film in the expansion step for cutting, and then to the relative The expansion step of extending the distance between the semiconductor wafers of the bonded crystal film after the cutting is performed while suppressing the tensile stress generated by the dicing tape under high temperature (for example, normal temperature).

In the dicing tape of the first aspect of the invention, the stretching speed condition in the above tensile test is preferably in the range of 10 to 1000 mm/min, more preferably 100 to 1000 mm/min. The specific strain is in the dicing tape from the viewpoint of the step speed in the case where the dicing tape is in the form of an expansion step in the form of a bonding film on the side of the adhesive layer and the productivity of the semiconductor device. The tensile speed condition of the above tensile test in which the tensile stress is in the range of 15 to 32 MPa is preferably 10 mm/min or more, more preferably 100 mm/min or more. In order to avoid breaking the present dicing tape in the case where the adhesive film layer is in close contact with the adhesive film for the expansion step, a specific strain value of 15 to 32 MPa is generated in the dicing tape. The tensile speed condition of the above tensile test in the range of the tensile stress is preferably 1000 mm/min or less, more preferably 300 mm/min or less.

According to a second aspect of the present invention, a crystal cut crystal film is provided. The dicing die-bonding film comprises the dicing tape of the first aspect of the invention and the viscous film on the adhesive layer of the dicing tape. The dicing die-bonding film having the dicing tape of the first aspect of the present invention is suitable for expanding the dicing band under the condition that a tensile stress in the range of 15 to 32 MPa is generated in the dicing tape. The expanding step is therefore suitable for well-cutting the die-bonding film on the dicing tape in the expanding step and suppressing swell or peeling from the dicing tape.

According to a third aspect of the present invention, a method of fabricating a semiconductor device is provided. The semiconductor device manufacturing method includes the following first step and second step. In the first step, a semiconductor wafer that can be singulated into a plurality of semiconductor wafers or a semiconductor wafer divided body including a plurality of semiconductor wafers is bonded to the diced die-bonding film. The dicing die-bonding film used in the first step includes a dicing tape having a laminated structure including a substrate and an adhesive layer, and a viscous film on the adhesive layer in the dicing tape. In this step, a semiconductor wafer divided body or a semiconductor wafer is bonded to the die-bonding film side of the diced die-bonding film. Then, in the second step, the die-cut film is cut by expanding the dicing band under the condition that a tensile stress in the range of 15 to 32 MPa is generated in the dicing tape, thereby obtaining a semiconductor wafer with an adhesion film. The expansion of the dicing tape is performed, for example, in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body or the semiconductor wafer bonded to the diced die film.

The present inventors have found that in the expansion step using a diced die film for obtaining a semiconductor wafer with a die-bonding film, the tensile stress generated by the expanded dicing tape in the dicing die film is 15 MPa. The above and below 32 MPa are suitable for causing the cleavage band in the self-expansion of the tensile stress as a sufficient cutting force to act on the die film to cut the die film, and is suitable for preventing the self-expanding dicing band from acting on the dicing tape The residual stress of the subsequent die film is excessively large, thereby suppressing the film or the semiconductor wafer attached to the film from being embossed or peeled off from the dicing tape. For example, it is as shown in the examples and comparative examples mentioned later. Further, in the second step of the method for fabricating a semiconductor device according to the third aspect of the present invention, the semiconductor wafer is bonded to the dicing tape of the semiconductor wafer or the semiconductor wafer. The dicing band is extended under the conditions of tensile stress in the range of 15 to 32 MPa. The present semiconductor device manufacturing method including such a second step, that is, an expansion step, is suitable for cutting the adhesive film on the dicing tape well and suppressing swell or peeling from the dicing tape.

In the second step of the method for fabricating a semiconductor device, the lower the temperature condition, the greater the tensile stress exhibited by the dicing tape, and the temperature condition in the second step is preferably 0° C. or less. More preferably, it is -20 to -5 ° C, more preferably -15 to -5 ° C, still more preferably -15 ° C. According to this configuration, the relatively large tensile stress generated by the expanded dicing band in the second step under relatively low temperature conditions can be used as the cutting force for the viscous film in the expansion step for cutting, and thereafter The expansion step of extending the distance between the semiconductor wafers of the bonded crystal film after the dicing is performed while suppressing the tensile stress generated by the dicing tape at a relatively high temperature (for example, normal temperature).

Fig. 1 is a schematic cross-sectional view showing a crystal cut crystal film X according to an embodiment of the present invention. The dicing die-bonding film X has a laminated structure including the dicing tape 10 and the die-bonding film 20 of an embodiment of the present invention, and can be used in the process of manufacturing a semiconductor device to obtain an extended step in the process of obtaining a semiconductor wafer with a die-bonding film. . Further, the die-cutting film X has, for example, a disk shape corresponding to the size of the semiconductor wafer to be processed in the manufacturing process of the semiconductor device.

The dicing tape 10 has a laminated structure including the substrate 11 and the adhesive layer 12, and can be 5 to 30% in a tensile test of a dicing tape test piece having a width of 20 mm at an initial inter-clip distance of 100 mm. At least a portion of the strain value of the range shows tensile stress in the range of 15 to 32 MPa. At least a portion of the strain value in the range of 5 to 30% includes a strain value in the range of 5 to 30%.

The base material 11 of the dicing tape 10 serves as an element of the function of the support in the dicing tape 10 or the diced crystal film X. The substrate 11 can be suitably used, for example, for a plastic substrate (particularly a plastic film). Examples of the constituent material of the plastic substrate include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimine, and poly. Ether quinone imine, polyamidamine, wholly aromatic polyamine, polyphenylene sulfide, aromatic polyamine, fluororesin, cellulose resin, and polyoxyxylene resin. Examples of the polyolefin include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymerization. Propylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene-butene Copolymer, and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The substrate 11 may be composed of one material or may be composed of two or more materials. The substrate 11 may have a single layer configuration or a multilayer structure. When the adhesive layer 12 on the substrate 11 is an ultraviolet curing type as described below, the substrate 11 preferably has ultraviolet ray permeability. Further, when the substrate 11 includes a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film.

When the dicing die 101 or the substrate 11 is shrunk by local heating, for example, when the dicing film X is used, the substrate 11 preferably has heat shrinkability. Further, in the case where the substrate 11 contains a plastic film, the substrate 11 is preferably a biaxially stretched film in terms of achieving isotropic heat shrinkability of the dicing tape 10 or the substrate 11. The heat shrinkage rate of the dicing tape 10 or the substrate 11 measured by a heat treatment test under the conditions of a heating temperature of 100 ° C and a heat treatment time of 60 seconds is preferably 2 to 30%, more preferably 2 to 25%. More preferably, it is 3 to 20%, more preferably 5 to 20%. The heat shrinkage ratio refers to a heat shrinkage ratio of at least one of a heat shrinkage ratio in the MD (machine direction) direction and a heat shrinkage ratio in a so-called TD (transverse direction) direction.

The surface of the substrate 11 on the side of the adhesive layer 12 may also be subjected to a treatment for improving the adhesion to the adhesive layer 12. Examples of such a treatment include physical treatment such as corona discharge treatment, plasma treatment, sanding treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment; and chemical treatment such as chromic acid treatment. ; and primer treatment.

The thickness of the substrate 11 is preferably 40 μm or more, and more preferably 50, from the viewpoint of the strength of the substrate 11 to function as a support in the dicing tape 10 or the crystal cut film X. More than μm, more preferably 55 μm or more, still more preferably 60 μm or more. Further, from the viewpoint of achieving moderate flexibility in the dicing tape 10 or the dicing film X, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, still more preferably 150. Below μm.

The adhesive layer 12 of the dicing tape 10 contains an adhesive. The adhesive may be an adhesive (adhesive-reducing adhesive) that can intentionally reduce the adhesive force due to external action such as radiation irradiation or heating, or the adhesive force may be reduced by little or no external action. The adhesive (adhesive non-reducing adhesive) can be appropriately selected depending on the method or conditions for singulation of the semiconductor wafer in which the diced crystal film X is used for singulation.

When the adhesive lowering adhesive is used as the adhesive in the adhesive layer 12, the adhesive layer 12 can exhibit a relatively high adhesive force during the manufacturing process or during use of the crystalline crystal film X. The state is distinguished from the state in which the relatively low adhesion is displayed. For example, when the adhesive film 20 is bonded to the adhesive layer 12 of the dicing tape 10 during the manufacturing process of the dicing film X, or when the dicing film X is used for a specific wafer cutting step, The adhesive layer 12 can be used to exhibit a relatively high adhesion state to suppress/prevent the adhesion film 20 or the like from being embossed or peeled off from the adhesive layer 12, and on the other hand, for self-cutting and crystallizing In the pickup step of the semiconductor wafer in which the dicing tape 10 of the film X is picked up, the semiconductor wafer having the adhesion film can be appropriately picked up from the adhesive layer 12 after the adhesion of the adhesive layer 12 is lowered.

Examples of such an adhesive-reducing adhesive include a radiation curable adhesive (adhesive having radiation curability), a heat-expandable adhesive, and the like. In the adhesive layer 12 of the present embodiment, an adhesive lowering type adhesive can be used, and two or more types of adhesive lowering type adhesives can be used. Further, the entire adhesive layer 12 is formed of an adhesive-reducing adhesive, and a part of the adhesive layer 12 may be formed of an adhesive-reducing adhesive. For example, in the case where the adhesive layer 12 has a single layer structure, the entire adhesive layer 12 is formed of an adhesive-reducing adhesive, or a specific portion of the adhesive layer 12 (for example, as a wafer attached). The central region of the target region is formed of an adhesive-reducing adhesive and other portions (for example, a region where the wafer ring is attached to the target region and located outside the central region) are formed of an adhesive non-reducing adhesive. Further, when the adhesive layer 12 has a laminated structure, all of the layers in which the laminated structure can be formed are formed of an adhesive lowering type adhesive, and one of the laminated layers may be formed of an adhesive lowering type adhesive.

As the radiation-curable adhesive in the adhesive layer 12, for example, an adhesive of a type hardened by irradiation with an electron beam, ultraviolet rays, α rays, β rays, γ rays, or X-rays can be used, and it can be used particularly well. An adhesive (UV curable adhesive) of the type hardened by ultraviolet irradiation.

The radiation-curable adhesive in the adhesive layer 12 is, for example, a radiation polymerizable group containing a base polymer such as an acrylic polymer as an acrylic adhesive and a functional group such as a carbon-carbon double bond having radiation polymerization property. An addition type radiation curable adhesive which is a monomer component or an oligomer component.

The above acrylic polymer preferably contains a monomer unit derived from an acrylate and/or a methacrylate as a main monomer unit which is the most in mass ratio. Hereinafter, "(meth)acrylic" means "acrylic" and/or "methacrylic".

Examples of the (meth) acrylate used to form the monomer unit of the acrylic polymer include (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, and (meth)acrylic acid aryl ester. A hydrocarbon-containing (meth) acrylate. Examples of the (meth)acrylic acid alkyl ester include methyl (meth)acrylate, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, and third butyl ester. Ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, thirteen Alkyl esters, myristyl esters, cetyl esters, octadecyl esters, and eicosyl esters. Examples of the cycloalkyl (meth)acrylate include cyclopentyl (meth)acrylate and cyclohexyl ester. Examples of the aryl (meth)acrylate include phenyl (meth)acrylate and benzyl (meth)acrylate. As the (meth) acrylate used for the main monomer of the acrylic polymer, only one (meth) acrylate may be used, and two or more (meth) acrylates may be used. The (meth) as the main monomer in the total monomer component of the acrylic polymer is formed by appropriately expressing the basic properties such as the adhesiveness obtained by the (meth) acrylate in the adhesive layer 12. The ratio of the acrylate is preferably 40% by mass or more, and more preferably 60% by mass or more.

The acrylic polymer may also contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylate in order to modify its cohesive force, heat resistance and the like. Examples of such a monomer component include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphate group-containing monomer, and propylene. a functional group-containing monomer such as guanamine or acrylonitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumaric acid. And butenoic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and (meth)acrylic acid 6-. Hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (meth)acrylic acid (4-hydroxymethyl ring) Hexyl) methyl ester. Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and methyl glycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, and (meth)acrylamide. Acid, sulfopropyl (meth) acrylate, and (meth) propylene decyl naphthalene sulfonic acid. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethyl acryloylphosphoric acid. As the other monomer used for the acrylic polymer, one type of monomer may be used, or two or more types of monomers may be used. The ratio of the other monomer component in the total monomer component for forming the acrylic polymer is preferably such that the basic properties such as the adhesiveness obtained by the (meth) acrylate are appropriately expressed in the adhesive layer 12. It is 60% by mass or less, more preferably 40% by mass or less.

The acrylic polymer may further contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as a (meth) acrylate as a main monomer in order to form a crosslinked structure in the polymer skeleton. Examples of such a polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and new Pentandiol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate Ester, epoxy (meth) acrylate (ie poly(meth) acrylate), polyester (meth) acrylate, and (meth) acrylate urethane. As the polyfunctional monomer used for the acrylic polymer, one type of polyfunctional monomer can be used, and two or more types of polyfunctional monomers can also be used. The ratio of the polyfunctional monomer in the total monomer component for forming the acrylic polymer is preferably such that the adhesive layer 12 exhibits the basic properties such as the adhesiveness obtained by the (meth) acrylate. It is 40% by mass or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerization using a raw material monomer forming the same. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. The low density of the adhesive layer 12 in the dicing tape 10 or the dicing film X is considered from the viewpoint of high cleanliness in the semiconductor device manufacturing method using the dicing tape 10 or the dicing film X. The molecular weight substance is preferably small, and the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

The adhesive layer 12 or the adhesive for forming the same may further contain an external crosslinking agent in order to increase the number average molecular weight of the base polymer such as an acrylic polymer. Examples of the external crosslinking agent which reacts with a base polymer such as an acrylic polymer to form a crosslinked structure include a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), and an aziridine compound. And melamine crosslinking agent. The content of the external crosslinking agent in the adhesive layer 12 or the adhesive for forming the same is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the base polymer.

Examples of the radiation polymerizable monomer component for forming a radiation curable adhesive include (meth)acrylic acid urethane, trimethylolpropane tri(meth)acrylate, and pentaerythritol tris(methyl). Acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate . Examples of the radiation-polymerizable oligomer component to form the radiation-curable adhesive include various types such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type. The polymer has a molecular weight of about 100 to 30,000 or so. The total content of the radiation polymerizable monomer component or oligomer component in the radiation-curable adhesive is determined by a range in which the adhesive force of the formed adhesive layer 12 can be appropriately lowered, and is based on a base such as an acrylic polymer. 100 parts by mass of the polymer is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass. In addition, as an additive type radiation-curable adhesive, for example, those disclosed in Japanese Laid-Open Patent Publication No. Sho 60-196956 can be used.

The radiation curable adhesive in the adhesive layer 12 may, for example, be a base containing a polymer side chain or a functional group such as a carbon-carbon double bond having a radiation polymerizable property at a polymer main chain terminal in the polymer main chain. A radiation-curing adhesive of an in-package type of a polymer. Such an inner-package type radiation-curable adhesive is preferable in that it suppresses the unintended temporal change of the adhesive property due to the migration of the low molecular weight component in the formed adhesive layer 12.

The base polymer contained in the radiation-curable adhesive of the inner package type is preferably an acrylic polymer as a basic skeleton. As the acrylic polymer forming such a basic skeleton, the above acrylic polymer can be used. As a method of introducing a radiation-polymerizable carbon-carbon double bond to an acrylic polymer, for example, a method of copolymerizing a raw material monomer containing a monomer having a specific functional group (first functional group) to obtain an acrylic acid is used. After the polymer, a compound having a specific functional group (second functional group) capable of bonding with the first functional group and a radiation-polymerizable carbon-carbon double bond is subjected to radiation polymerization for maintaining a carbon-carbon double bond. The acrylic polymer is subjected to a condensation reaction or an addition reaction under the condition of constantity.

Examples of the combination of the first functional group and the second functional group include a carboxyl group, an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridine group, an aziridine group and a carboxyl group, a hydroxyl group and an isocyanate group, and a different one. Cyanate group and hydroxyl group. Among these combinations, from the viewpoint of easiness of reaction tracking, a combination of a hydroxyl group and an isocyanate group or a combination of an isocyanate group and a hydroxyl group is preferred. Further, the technical difficulty in producing a polymer having a highly reactive isocyanate group is high, and on the other hand, from the viewpoint of easiness of production or acquisition of the acrylic polymer, acrylic polymerization is more preferable. The first functional group on the object side is a hydroxyl group and the second functional group is an isocyanate group. In this case, examples of the isocyanate compound having a radiation-polymerizable carbon-carbon double bond and an isocyanate group as the second functional group include methacryl oxime isocyanate and 2-methyl propylene isocyanate. Alkoxyethyl ester, and m-isopropenyl-α,α-dimethylbenzyl isocyanate. Further, the acrylic polymer having the first functional group preferably contains a monomer unit derived from the hydroxyl group-containing monomer, or preferably contains 2-hydroxyethyl vinyl ether. Or a monomer unit of an ether compound such as 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether.

The radiation-curable adhesive in the adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include an α-keto alcohol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonium chloride compound, a photoactive quinone compound, and a diphenyl group. Ketone compound, 9-oxopurine A compound, camphorquinone, a halogenated ketone, a mercaptophosphine oxide, and a decylphosphonate. Examples of the α-ketol compound include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl) ketone and α-hydroxy-α,α'-dimethylacetophenone. , 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexyl phenyl ketone. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl. Keto-1-[4-(methylthio)-phenyl]-2-morpholinylpropane-1. Examples of the benzoin ether-based compound include benzoin ethyl ether, benzoin isopropyl ether, and aniseed methoxyether. Examples of the ketal compound include benzoin dimethyl ketal. Examples of the aromatic sulfonium chloride-based compound include 2-naphthalenesulfonium chloride. Examples of the photoactive quinone compound include 1-benzophenone-1,2-propanedione-2-(O-ethoxycarbonyl)fluorene. Examples of the benzophenone-based compound include benzophenone, benzhydrylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. 9-oxopurine 9-oxopurine 2-chloro 9-oxosulfuron 2-methyl 9-oxothione 2,4-Dimethyl 9-oxothione Isopropyl 9-oxopurine 2,4-Dichloro 9-oxosulfuron 2,4-Diethyl 9-oxothione And 2,4-diisopropyl 9-oxothiolane . The content of the photopolymerization initiator in the radiation-curable adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass based on 100 parts by mass of the base polymer such as an acrylic polymer.

The heat-expandable adhesive in the adhesive layer 12 contains an adhesive (foaming agent, heat-expandable microsphere, etc.) which is foamed or expanded by heating, and examples of the foaming agent include various inorganic systems. The foaming agent and the organic foaming agent are, for example, microspheres in which a material which is easily vaporized and expanded by heating is enclosed in a shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, and azide. Examples of the organic foaming agent include fluorochlorinated alkane such as trichloromonofluoromethane or dichloromonofluoromethane; azo such as azobisisobutyronitrile or azodimethylamine or azodicarboxylate; a compound; p-toluenesulfonate or diphenylphosphonium-3,3'-disulfonium, 4,4'-oxybis(phenylsulfonate), allyl bis (sulfonate), etc. a compound; p-toluenesulfonyl urea or an amine urea compound such as 4,4'-oxybis(phenylsulfonamide); 5-morpholinyl-1,2,3,4-thiatriazole, etc. An azole compound; and N,N'-dinitrosopentamethylenetetramine or N,N'-dimethyl-N,N'-dinitroso-p-xylamine Base compound. Examples of the substance which is used to form the heat-expandable microspheres as described above and which are easily vaporized and expanded by heating include isobutane, propane, and pentane. The heat-expandable microspheres can be produced by encapsulating a substance which is easily vaporized and expanded by heating into a shell-forming substance by a coacervation method or an interfacial polymerization method. As the shell-forming substance, a substance which exhibits hot meltability or a substance which can be broken by the action of thermal expansion of the enclosed substance can be used. Examples of such a substance include a vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyfluorene.

For example, an adhesive or a pressure-sensitive adhesive in a form in which the radiation-curable adhesive described above is cured by radiation irradiation in advance with respect to the adhesion-reducing adhesive can be used. Agents, etc. In the adhesive layer 12 of the present embodiment, an adhesive non-reducing adhesive may be used, or two or more adhesive non-reducing adhesives may be used. Further, the entire adhesive layer 12 is formed of an adhesive non-reducing adhesive, and a part of the adhesive layer 12 may be formed of an adhesive non-reducing adhesive. For example, when the adhesive layer 12 has a single layer structure, the entire adhesive layer 12 is formed of an adhesive non-reducing adhesive, or a specific portion of the adhesive layer 12 (for example, a wafer ring sticker). The region with the target region and located outside the attachment target region of the wafer is formed of an adhesive non-reducing adhesive and the other portion (for example, the central region of the attachment target region of the wafer) is made of an adhesive-reducing adhesive. form. Further, when the adhesive layer 12 has a laminated structure, all of the layers in which the laminated structure can be formed are formed of an adhesive non-reducing adhesive, and one of the laminated layers may be formed of an adhesive non-reducing adhesive.

An adhesive (radiation-cured radiation-curable adhesive) in which the radiation-curable adhesive is hardened by radiation irradiation in advance, even if the adhesive force is lowered by radiation irradiation, it also exhibits adhesion due to the polymer component contained therein. The ability to exhibit the minimum required adhesion of the dicing tape adhesive layer in the dicing step or the like. In the case of using the radiation-curable adhesive which is irradiated with radiation, in the planar direction of the adhesive layer 12, the entire adhesive layer 12 is formed of a radiation-curable adhesive which is irradiated with radiation. Further, one portion of the adhesive layer 12 may be formed of a radiation-curable adhesive that is irradiated with radiation, and the other portion may be formed of a radiation-curable adhesive that is not irradiated with radiation.

The diced crystal film X containing the radiation-curable adhesive which is irradiated with radiation at least a part of the adhesive layer 12 can be produced, for example, by the following procedure. First, an adhesive layer (radiation-curing adhesive layer) obtained by a radiation-curable adhesive is formed on the substrate 11 of the dicing tape 10. Then, a specific portion or the whole of the radiation-curable adhesive layer is irradiated with radiation to form at least a part of the adhesive layer 12 containing the radiation-curable adhesive which is irradiated with radiation. Thereafter, an adhesive layer to be described later as the adhesive film 20 is formed on the adhesive layer 12. The dicing film X containing the radiation-curable adhesive which is irradiated with radiation at least a part of the adhesive layer 12 may be produced by the following process. First, an adhesive layer (radiation-curing adhesive layer) obtained by a radiation-curable adhesive is formed on the substrate 11 of the dicing tape 10. Next, an adhesive layer to be described later as the adhesive film 20 is formed on the radiation-curable adhesive layer. Thereafter, a specific portion or the whole of the radiation-curable adhesive layer is irradiated with radiation to form at least a part of the adhesive layer 12 containing the radiation-curable adhesive which is irradiated with radiation.

On the other hand, as the pressure-sensitive adhesive in the adhesive layer 12, a known or conventional adhesive can be used, and an acrylic adhesive or a rubber-based adhesive using an acrylic polymer as a base polymer can be preferably used. In the case where the adhesive layer 12 contains an acrylic adhesive as a pressure sensitive adhesive, the acrylic polymer as a base polymer of the acrylic adhesive preferably contains a monomer unit derived from (meth) acrylate. As the main monomer unit in terms of mass ratio. Examples of such an acrylic polymer include an acrylic polymer described above with respect to a radiation curable adhesive.

In addition to the above components, the adhesive layer 12 or the adhesive for forming the same may contain a crosslinking agent, an adhesion-imparting agent, an anti-aging agent, a coloring agent such as a pigment or a dye, or the like. The coloring agent may also be a compound colored by radiation. As such a compound, a leuco dye is mentioned, for example.

The thickness of the adhesive layer 12 is preferably from 1 to 50 μm, more preferably from 2 to 30 μm, still more preferably from 5 to 25 μm. In such a configuration, for example, in the case where the adhesive layer 12 contains a radiation-curable adhesive, it is preferable to balance the adhesion force of the adhesive film 12 before and after the radiation of the adhesive layer 12 is cured.

The dicing tape 10 having a laminated structure including the substrate 11 and the adhesive layer 12 as described above is stretched at a distance of 100 mm between the initial chucks for a dicing tape test piece having a width of 20 mm as described above. In the test, the tensile stress in the range of 15 to 32 MPa can be exhibited in at least a part of the strain value in the range of 5 to 30%. The dicing tape 10 can exhibit a range of 15 to 32 MPa in the above tensile test in the case where the diced crystal film X having the dicing tape 10 is used in the expansion step to ensure a sufficient stretching length. The strain value of the tensile stress is preferably 6% or more, more preferably 7% or more, still more preferably 8% or more. Further, in the case where the stretching length required for the case where the dicing die film X having the dicing tape 10 is used for the expansion step is excessively large, the dicing tape 10 can be displayed in the above tensile test 15~ The strain value of the tensile stress in the range of 32 MPa is preferably 20% or less, more preferably 17% or less, still more preferably 15% or less, still more preferably 13% or less. Further, the tensile stress in the above tensile test of the dicing tape 10 is in the range of 15 to 32 MPa as described above, preferably in the range of 20 to 32 MPa.

In the above tensile test, the lower the temperature condition, the higher the tensile stress exhibited by the dicing tape 10 or the test piece thereof, and the temperature condition in the tensile test is preferably -15 °C. Further, the stretching speed condition in the above tensile test is preferably in the range of 10 to 1000 mm/min, more preferably 100 to 1000 mm/min. That is, in the tensile test carried out under the measurement conditions, the dicing tape 10 can have at least a part of the strain value in the range of 5 to 30%, preferably 6% or more, more preferably 7% or more, and even more preferably The strain value of 8% or more, preferably 20% or less, more preferably 17% or less, more preferably 15% or less, still more preferably 13% or less, is 15 to 32 MPa, more preferably 20 to 32 MPa. Tensile stress in the range.

The modulus of elasticity of the dicing tape 10 at -15 ° C is preferably 500 MPa or more, more preferably 700 MPa or more, still more preferably 900 MPa or more, and still more preferably 1000 MPa or more. Such a configuration is suitable for producing a tensile stress in the range of 15 to 32 MPa in at least a part of the strain value in the range of 5 to 30% in the above tensile test with respect to the dicing tape 10.

The die-bonding film 20 of the dicing film X has a function of exhibiting a function as an adhesive for exhibiting thermosetting properties for a die bond. In the present embodiment, the adhesive for forming the die-bonding film 20 may have a composition comprising a thermosetting resin and a thermoplastic resin, for example, as a binder component, or may have a bond that can react with the hardener to form a bond. The composition of the thermoplastic resin of the thermosetting functional group. When the adhesive for forming the adhesive film 20 has a composition containing a thermoplastic resin having a thermosetting functional group, the adhesive need not contain a thermosetting resin (epoxy resin or the like). The die film 20 may have a single layer structure or a multilayer structure.

In the case where the adhesive film 20 contains a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amine resin, an unsaturated polyester resin, and a polyurethane. Resin, polyoxyn resin, and thermosetting polyimide resin. When the adhesive film 20 is formed, one type of thermosetting resin can be used, and two or more types of thermosetting resins can be used. The reason why the content of the ionic impurities or the like which is a cause of corrosion of the semiconductor wafer which may be a target is small tends to be small, and the thermosetting resin contained in the adhesive film 20 is preferably an epoxy resin. Further, as the curing agent for the epoxy resin, a phenol resin is preferred.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and anthraquinone type. , phenol novolak type, o-cresol novolak type, trishydroxyphenylmethane type, tetraphenol ethane type, carbendazim type, isocyanuric acid triglycidyl ester type, and glycidylamine type epoxy Resin. The novolak type epoxy resin, the biphenyl type epoxy resin, the trishydroxyphenylmethane type epoxy resin, and the tetraphenol ethane type epoxy resin are rich in reactivity with the phenol resin as a curing agent and are excellent in heat resistance. In particular, it is preferable as the epoxy resin contained in the adhesive film 20.

Examples of the phenol resin which can be used as a curing agent for an epoxy resin include a novolak type phenol resin, a resol type phenol resin, and polyhydroxy styrene such as polyparaxyl styrene. Examples of the novolac type phenol resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a nonylphenol novolak resin. As the phenol resin which functions as a curing agent for the epoxy resin, one phenol resin may be used, or two or more kinds of phenol resins may be used. The phenol novolak resin or the phenol aralkyl resin has a tendency to improve the connection reliability of the adhesive when it is used as a curing agent for an epoxy resin as an adhesive for a die bonding, and thus it is used as the adhesive film 20 The hardener containing the epoxy resin is preferred.

In the viscous film 20, the phenol resin is used in an amount of one equivalent per equivalent of the epoxy group in the epoxy resin component from the viewpoint of sufficiently curing the epoxy resin and the phenol resin. The hydroxyl group is preferably contained in an amount of from 0.5 to 2.0 equivalents, more preferably from 0.8 to 1.2 equivalents.

Examples of the thermoplastic resin contained in the adhesive film 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, and ethylene-acrylic acid. Ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamine resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET (polyethylene terephthalate) A saturated polyester resin such as polyethylene terephthalate or PBT (polybutylene terephthalate), a polyamidoximine resin, and a fluororesin. A thermoplastic resin may be used to form the adhesive film 20, and two or more thermoplastic resins may be used. The thermoplastic resin contained in the die bond film 20 is preferably an acrylic resin because it is easy to ensure the bonding reliability by the die bond film 20 because the ionic impurities are small and the heat resistance is high.

The acrylic resin contained in the die bond film 20 as the thermoplastic resin preferably contains a monomer unit derived from (meth) acrylate as the main monomer unit having the largest mass ratio. As such a (meth) acrylate, for example, the same (meth) acrylate as the above-mentioned acrylic polymer as a component of the radiation-curable adhesive for forming the adhesive layer 12 can be used. . The acrylic resin contained in the die bond film 20 as a thermoplastic resin may further contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylate. Examples of such other monomer components include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, and a phosphate group-containing monomer. A monomer containing a functional group such as acrylamide or acrylonitrile, or a plurality of polyfunctional monomers, specifically, an acrylic polymerization which is a component of a radiation curable adhesive for forming the adhesive layer 12 can be used. The other monomer which is copolymerizable with the (meth) acrylate is the same as described above. The acrylic resin contained in the adhesive film 20 is preferably a (meth) acrylate from the viewpoint of achieving a high cohesive force in the adhesive film 20 (in particular, the carbon number of the alkyl group is 4 or less. a copolymer of a (meth)acrylic acid alkyl ester), a carboxyl group-containing monomer, a nitrogen atom-containing monomer, and a polyfunctional monomer (particularly a polyglycidyl polyfunctional monomer), more preferably acrylic acid B a copolymer of an ester, butyl acrylate, acrylic acid, acrylonitrile, and poly(meth)acrylic acid glycidyl ester.

The content ratio of the thermosetting resin in the adhesive film 20 is preferably from 5 to 60% by mass, more preferably from 10 to 50, from the viewpoint of suitably exhibiting the function as a thermosetting adhesive in the adhesive film 20. quality%.

In the case where the adhesive film 20 contains a thermoplastic resin having a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The acrylic resin for forming the thermosetting functional group-containing acrylic resin preferably contains a monomer unit derived from (meth) acrylate as the main monomer unit having the largest mass ratio. As such a (meth) acrylate, for example, the same (meth) acrylate as the above-mentioned acrylic polymer as a component of the radiation-curable adhesive for forming the adhesive layer 12 can be used. . On the other hand, examples of the thermosetting functional group for forming the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among these, a glycidyl group and a carboxyl group can be used favorably. In other words, as the acrylic resin containing a thermosetting functional group, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be preferably used. In addition, as the curing agent of the thermosetting functional group-containing acrylic resin, for example, an external crosslinking agent which is a component of the radiation-curable adhesive for forming the adhesive layer 12 may be used. Narrator. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol-based compound can be preferably used as the curing agent, and for example, various phenol resins described above can be used.

In order to achieve a certain degree of crosslinking degree, for example, it is preferable to react with a functional group or the like at the end of the molecular chain of the resin contained in the adhesive film 20, in order to achieve a certain degree of crosslinking. The polyfunctional compound to be bonded is previously prepared as a crosslinking agent in the resin composition for forming an adhesive film. Such a configuration is preferable in that the adhesive film 20 is improved in adhesion characteristics at a high temperature and improvement in heat resistance. As such a crosslinking agent, a polyisocyanate compound is mentioned, for example. Examples of the polyisocyanate compound include methylphenyl diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of a polyhydric alcohol and a diisocyanate. The content of the crosslinking agent in the resin composition for forming a film is increased by 100 parts by mass of the resin having the above-mentioned functional group bonded to the crosslinking agent, thereby increasing the cohesive force of the formed die film 20. In view of the above, it is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesion of the formed die sheet 20, it is preferably 7 parts by mass or less. Further, as the crosslinking agent in the adhesive film 20, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

The die film 20 may also contain a filler. The physical properties such as conductivity, thermal conductivity, and elastic modulus of the die-bonding film 20 can be adjusted by blending the filler into the die-bonding film 20. The filler may, for example, be an inorganic filler or an organic filler, and more preferably an inorganic filler. Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and boron nitride. Examples of the crystalline ceria and the amorphous ceria include a metal element such as aluminum, gold, silver, copper or nickel, or an alloy, amorphous carbon black or graphite. The filler may have various shapes such as a spherical shape, a needle shape, and a scale shape. As the filler in the adhesive film 20, one type of filler may be used, or two or more types of fillers may be used.

When the adhesive film 20 contains a filler, the average particle diameter of the filler is preferably from 0.005 to 10 μm, more preferably from 0.005 to 1 μm. When the average particle diameter of the filler is 0.005 μm or more, it is preferable to achieve high wettability or adhesion to the adherend such as a semiconductor wafer in the die film 20. When the average particle diameter of the filler is 10 μm or less, it is preferable to enjoy a sufficient filler addition effect in the die-bonding film 20 and to secure heat resistance. The average particle diameter of the filler can be determined, for example, by using a photometric type particle size distribution meter (trade name "LA-910", manufactured by Horiba, Ltd.).

The die attach film 20 may also contain other components as needed. Examples of the other component include a flame retardant, a decane coupling agent, and an ion scavenger. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropyl group. Diethoxy decane. Examples of the ion scavenger include hydrotalcites, barium hydroxide, aqueous cerium oxide (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), and zirconium phosphate of a specific structure (for example, manufactured by Toagosei Co., Ltd.). IXE-100"), magnesium ruthenate (for example, "KYOWAAD 600" manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (for example, "KYOWAAD 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds capable of forming a complex with metal ions can also be used as ion scavengers. Examples of such a compound include a triazole compound, a tetrazole compound, and a bipyridine compound. Among these, a triazole-based compound is preferred from the viewpoint of stability of a complex formed between metal ions. Examples of such a triazole-based compound include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, and carboxybenzone. Triazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-p-pentylphenyl)benzene And triazole, 2-(2-hydroxy-5-th-octylphenyl)benzotriazole, 6-(2-benzotriazolyl)-4-trioctyl-6'-third -4'-methyl-2,2'-methylenebisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl) Benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazol-1-yl)methyl }phenol, 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, C7-C9-alkyl-3-[3-(2H-benzotriazol-2-yl) -5-(1,1-dimethylethyl)-4-hydroxyphenyl]propyl ether, 3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzo Octazol-2-yl)phenyl]propanoate, 3-[3-t-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propene 2-ethylhexyl acid, 2-(2H- And triazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzene And triazol-2-yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-th-octylbenzene Benzo-benzotriazole, 2-(3-tert-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di Third amylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chloro-benzotriazole, 2-[2-hydroxy-3, 5-bis(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)- 4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzene And triazole, and methyl 3-[3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propanoate. Further, a specific hydroxyl group-containing compound such as a hydroquinone compound or a hydroxyquinone compound or a polyphenol compound can also be used as the ion scavenger. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, indophenol, tannin, gallic acid, methyl gallate, and pyrogallol. As the other component as described above, one component may be used, or two or more components may be used.

The thickness of the die-bonding film 20 is, for example, in the range of 1 to 200 μm. The upper limit of the thickness is preferably 100 μm, more preferably 80 μm. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm.

The diced crystal film X having the above configuration can be produced, for example, as follows.

The dicing tape 10 of the diced crystal film X can be produced by providing the adhesive layer 12 on the prepared substrate 11. For example, the resin substrate 11 can be formed by a calendering film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, or the like. Film making method. The adhesive layer 12 can be formed by coating the adhesive composition on the substrate 11 or a specific separator (ie, release liner) by forming the adhesive composition for forming the adhesive layer 12 to form an adhesive composition. The layer is formed by desolvation or the like (in this case, heating and crosslinking as necessary) as needed. Examples of the coating method of the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. The temperature for desolvation or the like of the adhesive composition layer is, for example, 80 to 150 ° C, and the time is, for example, 0.5 to 5 minutes. When the adhesive layer 12 is formed on the separator, the adhesive layer 12 to which the separator is attached is attached to the substrate 11. The dicing tape 10 can be fabricated in the manner described above.

Regarding the die-bonding film 20 of the dicing film X, the adhesive composition can be formed by coating the adhesive composition on the specific separator by forming the adhesive composition for forming the adhesive film 20 to form an adhesive composition layer. Further, the adhesive composition layer is subjected to solvent removal or the like as necessary. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating. The temperature for performing solvent removal or the like of the adhesive composition layer is, for example, 70 to 160 ° C, and the time is, for example, 1 to 5 minutes.

In the production of the diced crystal film X, the adhesive film 20 is bonded to the adhesive layer 12 side of the dicing tape 10, for example. The bonding temperature is, for example, 30 to 50 ° C, preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. In the case where the adhesive layer 12 is a radiation-curable adhesive layer as described above, when the adhesive layer 12 is irradiated with ultraviolet rays or the like after bonding with the adhesive film 20, for example, the adhesive is applied from the side of the substrate 11 The layer 12 is irradiated with radiation, and the irradiation amount thereof is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . The region (irradiation region R) to be irradiated as the adhesion reducing measure of the adhesive layer 12 in the dicing film X is usually the periphery of the bonding film 20 in the adhesive layer 12 except for the peripheral portion thereof. The area.

For example, the diced crystal film X shown in Fig. 1 can be produced as described above. In the crystal cut film X, a separator (not shown) may be provided on the side of the die film 20 so as to cover at least the die film 20. When the size of the adhesive film 20 is smaller than the adhesive layer 12 of the dicing tape 10 and there is a region where the adhesive film 12 is not bonded to the adhesive film 20, for example, at least the adhesive film 20 may be coated. A separator is provided in the form of the adhesive layer 12. The separator is used to protect at least the adhesive film 20 (for example, the die film 20 and the adhesive layer 12) from being exposed, and is peeled off from the film when the die-cut film X is used. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. Plastic film or paper, etc.

2 to 7 show a method of manufacturing a semiconductor device according to an embodiment of the present invention.

In the semiconductor device manufacturing method, first, as shown in FIGS. 2(a) and 2(b), the dividing groove 30a is formed in the semiconductor wafer W (the dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are formed on the first surface Wa side of the semiconductor wafer W, and a wiring structure (not shown) necessary for the semiconductor element is formed on the first surface Wa. In this step, the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, and the semiconductor wafer W is held in the wafer processing tape T1. A dividing groove 30a having a specific depth is formed on the first surface Wa side of the semiconductor wafer W by using a rotary blade such as a dicing device. The dividing groove 30a is for separating the semiconductor wafer W into a space of a semiconductor wafer unit (the dividing groove 30a is schematically indicated by a thick line in FIGS. 2 to 4).

Next, as shown in FIG. 2(c), the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is peeled off from the semiconductor wafer W. .

Then, as shown in FIG. 2(d), the semiconductor wafer W is thinned to a specific state by performing a grinding process from the second surface Wb while holding the semiconductor wafer W in the wafer processing tape T2. Thickness (wafer thinning step). The grinding process can be carried out using a grinding machine equipped with a grinding stone. In the present embodiment, the semiconductor wafer 30A which can be singulated into a plurality of semiconductor wafers 31 is formed by the wafer thinning step. Specifically, the semiconductor wafer 30A has a portion (connecting portion) on which the portion of the wafer to be singulated into a plurality of semiconductor wafers 31 is connected to the second surface Wb side. The thickness of the connection portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the front end of the second surface Wb side of the division groove 30a is, for example, 1 to 30 μm, preferably 3 to 20 μm. .

Next, as shown in FIG. 3(a), the semiconductor wafer 30A held on the wafer processing tape T2 is bonded to the die-bonding film 20 of the die-cutting film X. Thereafter, as shown in FIG. 3(b), the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the adhesive layer 12 in the die-cutting film X is a radiation-curable adhesive layer, the adhesive layer may be applied from the side of the substrate 11 after the semiconductor wafer 30A is bonded to the die film 20. 12 is irradiated with radiation such as ultraviolet rays instead of the above-described radiation irradiation in the manufacturing process of the dicing die film X. The irradiation amount is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . The region (the irradiation region R shown in FIG. 1) which is irradiated as the adhesion reducing measure of the adhesive layer 12 in the dicing film X is, for example, in the bonding region of the viscous film 20 in the adhesive layer 12. Except for the area other than its peripheral part.

Next, after the ring frame 41 is attached to the adhesive layer 12 of the dicing tape 10 in the dicing die X, as shown in FIG. 4(a), the dicing of the semiconductor wafer 30A is attached. The adhesive film X is fixed to the holder 42 of the expansion device.

Next, as shown in FIG. 4(b), the first expansion step (cold expansion step) under relatively low temperature conditions is performed, the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the diced crystal film X is diced. The die-bonding film 20 is cut into a small piece of the adhesive film 21 to obtain a semiconductor wafer 31 with a die-bonding film. In this step, the hollow cylindrical shape lifting member 43 provided in the expansion device abuts on the dicing tape 10 and rises on the lower side of the dicing die-bonding film X, so that the semiconductor wafer 30A is bonded thereto. The dicing tape 10 of the dicing film X is expanded in such a manner as to be stretched in the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is carried out under the conditions that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10. The temperature condition in the cold expansion step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, still more preferably -15 ° C. The expansion speed in the cold expansion step (the speed at which the jacking member 43 rises) is preferably 0.1 to 100 mm/sec. Further, the amount of expansion in the cold expansion step is preferably from 3 to 16 mm.

In this step, the semiconductor wafer 30A is cut in a thin portion and easily broken, and is singulated into a semiconductor wafer 31. At the same time, in this step, in the adhesive film 20 which is in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation in each region where the semiconductor wafers 31 are in close contact is suppressed, and on the other hand, The tensile stress generated in the dicing tape 10 acts in a state where the deformation groove between the semiconductor wafers 31 is opposed to the portion where the deformation is not caused. As a result, the portion where the dividing groove between the semiconductor wafer 31 and the semiconductor wafer 31 face each other is cut. After this step, as shown in FIG. 4(c), the lifting member 43 is lowered to release the expanded state of the dicing tape 10.

Next, as shown in FIG. 5(a), the second expansion step under the condition of relatively high temperature is performed to enlarge the distance (separation distance) between the semiconductor wafers 31 to which the adhesion film is attached. In this step, the hollow cylindrical shape lifting member 43 provided in the expansion device is raised again to expand the dicing tape 10 of the crystal cut film X. The temperature condition in the second expansion step is, for example, 10 ° C or higher, preferably 15 to 30 ° C. The expansion speed in the second expansion step (the speed at which the jacking member 43 rises) is, for example, 0.1 to 10 mm/sec, preferably 0.3 to 1 mm/sec. Further, the amount of expansion in the second expansion step is, for example, 3 to 16 mm. In this step, the separation distance of the semiconductor wafer 31 with the adhesion film is expanded to the extent that the semiconductor wafer 31 with the adhesion film can be appropriately picked up from the dicing tape 10 in the pickup step described below. After this step, as shown in FIG. 5(b), the lifting member 43 is lowered to release the expanded state of the dicing tape 10. In order to suppress the narrowing of the separation distance of the semiconductor wafer 31 with the die-bonding film on the dicing tape 10 after the extended state is released, it is preferable to compare the semiconductor wafer 31 in the dicing tape 10 before the release state. The portion outside the holding area is heated to shrink.

Next, as needed, after the semiconductor wafer 31 side of the dicing tape 10 having the semiconductor wafer 31 with the adhesion-attached film is cleaned by washing with water or the like, as shown in FIG. 6, self-cutting is performed. The tape 10 picks up the semiconductor wafer 31 with the adhesion film (pickup step). For example, in the lower side of the graph of the dicing tape 10, the needle member 44 of the pick-up mechanism is raised, and the semiconductor wafer 31 of the bonded-attached crystal film is lifted up through the dicing tape 10, and then the adsorption jig 45 is used. Its adsorption is maintained. In the picking up step, the jacking speed of the needle member 44 is, for example, 1 to 100 mm/sec, and the amount of lifting of the needle member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 7(a), the semiconductor wafer 31 with the attached adhesive film is temporarily attached to the specific adherend 51 via the adhesive film 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately fabricated semiconductor wafer. The shearing adhesion force at 25 ° C of the temporary adhesion of the adhesive film 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 51. The configuration in which the shearing force of the adhesive film 21 is 0.2 MPa or more is suitable for the wire bonding step described later, and suppresses the adhesion of the die film 21 to the semiconductor wafer 31 or the adherend 51 due to ultrasonic vibration or heating. Shear deformation is generated to properly perform wire bonding. Further, the shearing adhesion force at 175 ° C of the temporary adhesion of the adhesive film 21 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa, with respect to the adherend 51.

Next, as shown in FIG. 7(b), the electrode pads (not shown) of the semiconductor wafer 31 and the terminal portions (not shown) of the adherend 51 are electrically connected via the bonding wires 52. ). The electrode pad of the semiconductor wafer 31 or the wiring of the terminal portion of the bonded body 51 and the bonding wire 52 is realized by ultrasonic welding with heating, and is performed so as not to thermally cure the die film 21. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in the wire bonding is, for example, 80 to 250 ° C, preferably 80 to 220 ° C. Further, the heating time is from several seconds to several minutes.

Next, as shown in Fig. 7(c), the semiconductor wafer 31 is sealed by a sealing resin 53 for protecting the semiconductor wafer 31 or the bonding wires 52 on the adherend 51 (sealing step). In this step, thermal curing of the die film 21 is performed. In this step, the sealing resin 53 is formed, for example, by a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C, and the heating time is, for example, 60 seconds to several minutes. In the case where the hardening of the sealing resin 53 is not sufficiently performed in this step (sealing step), the hardening step for completely curing the sealing resin 53 is performed after this step. That is, in the case where the die-bonding film 21 is not completely thermally cured in the sealing step, the die-bonding film 21 may be completely thermally cured together with the sealing resin 53 in the post-hardening step. In the post-hardening step, the heating temperature is, for example, 165 to 185 ° C, and the heating time is, for example, 0.5 to 8 hours.

The semiconductor device can be fabricated in the manner described above.

In the present embodiment, as described above, after the semiconductor wafer 31 with the adhesive film is temporarily fixed to the adherend 51, the bonding process is performed without completely curing the adhesive film 21. Instead of such a configuration, in the present invention, the semiconductor wafer 31 with the adhesion film may be temporarily fixed to the adherend 51, and the die film 21 may be thermally cured, and then the wire bonding step may be performed.

In the method of fabricating a semiconductor device of the present invention, the wafer thinning step shown in FIG. 8 may be performed instead of the wafer thinning step described above with reference to FIG. 2(d). After the process described above with reference to FIG. 2(c), in the wafer thinning step shown in FIG. 8, in the state in which the semiconductor wafer W is held in the wafer processing tape T2, The second surface Wb is subjected to a grinding process to thin the wafer to a specific thickness, and a semiconductor wafer divided body 30B including a plurality of semiconductor wafers 31 and held by the wafer processing tape T2 is formed. In this step, the method of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side (first method) may be employed, and the wafer may be ground from the second surface Wb side until reaching the dividing groove 30a. Then, a method of forming a semiconductor wafer divided body 30B by causing a crack between the dividing groove 30a and the second surface Wb by the pressing force of the rotating grindstone to the wafer (second method). According to the method employed, the depth from the first surface Wa of the dividing groove 30a formed as described above with reference to Figs. 2(a) and 2(b) is appropriately determined. In Fig. 8, the dividing groove 30a after the first method or the dividing groove 30a after passing through the second method and the cracks connected thereto are schematically indicated by thick lines. In the present invention, the semiconductor wafer divided body 30B thus produced may be bonded to the crystal cut film X instead of the semiconductor wafer 30A, and the above-described steps may be performed with reference to FIGS. 3 to 7.

FIGS. 9(a) and 9(b) show a first expansion step (cold expansion step) performed after bonding the semiconductor wafer divided body 30B to the crystal cut film X. In this step, the hollow cylindrical shape lifting member 43 provided in the expansion device abuts on the dicing tape 10 and rises on the lower side of the dicing die-bonding film X, so that the semiconductor wafer divided body is bonded thereto. The dicing tape 10 of the dicing die film X of 30B is expanded so as to be stretched in the two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expansion is carried out under the conditions that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10. The temperature condition in this step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, still more preferably -15 ° C. The expansion speed in this step (the speed at which the jacking member 43 is raised) is preferably from 1 to 500 mm/sec. Further, the amount of expansion in this step is preferably from 1 to 10 mm. By this cold spreading step, the die-bonding film 20 of the die-cutting film X is cut into small pieces of the die film 21, and the semiconductor wafer 31 with the die-bonding film is obtained. Specifically, in this step, in the adhesive film 20 which is in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation in each region where the semiconductor wafers 31 of the semiconductor wafer divided body 30B are in close contact is suppressed. On the other hand, the tensile stress generated in the dicing tape 10 acts in a state where the deformation preventing action is not caused in the portion where the dividing groove 30a is opposed to the semiconductor wafer 31. As a result, the portion where the dividing groove 30a between the semiconductor wafer 31 and the semiconductor wafer 31 face each other is cut.

In the semiconductor device manufacturing method of the present invention, instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the crystal cut film X, the semiconductor wafer 30C produced in the following manner may be bonded. In the crystal cutting film X.

As shown in FIGS. 10(a) and 10(b), first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are formed on the first surface Wa side of the semiconductor wafer W, and a wiring structure (not shown) necessary for the semiconductor element is formed on the first surface Wa. In this step, the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, and the semiconductor wafer W is held in the wafer processing tape T3. The laser light that aligns the condensed spot with the inside of the wafer is irradiated to the semiconductor wafer W along the line dividing the line from the opposite side of the wafer processing tape T3, and is etched by the multiphoton absorption to the semiconductor crystal. The modified region 30b is formed in the circle W. The modified region 30b is used to separate the semiconductor wafer W into a fragile region of a semiconductor wafer unit. The method of forming the modified region 30b on the dividing line by laser irradiation in the semiconductor wafer is described in detail in Japanese Laid-Open Patent Publication No. 2002-192370, but the laser light in the present embodiment. The irradiation conditions are appropriately adjusted within the range of, for example, the following conditions. <Laser light irradiation conditions> (A) Laser light source Laser laser excitation Nd:YAG laser wavelength 1064 nm Laser spot cross-sectional area 3.14×10 ^-8 cm ² Oscillation mode Q-switch pulse repetition frequency Pulse width below 100 kHz 1 μs or less output 1 mJ or less laser light quality TEM00 Polarization characteristics Linear polarization (B) Concentration lens magnification 100 times or less NA 0.55 Transmission rate to laser light wavelength 100% or less (C) Movement of mounting stage on semiconductor substrate Speed 280 mm / sec or less

Then, as shown in FIG. 10(c), the semiconductor wafer W is thinned to a specific state by performing a grinding process from the second surface Wb while holding the semiconductor wafer W in the wafer processing tape T3. The thickness is thereby formed into a semiconductor wafer 30C (wafer thinning step) which can be singulated into a plurality of semiconductor wafers 31. In the present invention, the semiconductor wafer 30C produced in the above manner may be attached to the crystal cut film X instead of the semiconductor wafer 30A, and the above-described steps may be performed with reference to FIGS. 3 to 7.

11(a) and 11(b) show a first expansion step (cold expansion step) performed by bonding the semiconductor wafer 30C to the crystal cut film X. In this step, the hollow cylindrical shape lifting member 43 provided in the expansion device abuts on the dicing tape 10 and rises on the lower side of the crystal cutting film X, and the semiconductor wafer 30C is bonded thereto. The dicing tape 10 of the dicing film X is expanded in such a manner as to be stretched in the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is carried out under the conditions that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa is generated in the dicing tape 10. The temperature condition in this step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, still more preferably -15 ° C. The expansion speed in this step (the speed at which the jacking member 43 is raised) is preferably 0.1 to 100 mm/sec. Further, the amount of expansion in this step is preferably from 1 to 10 mm. By this cold spreading step, the die-bonding film 20 of the die-cutting film X is cut into small pieces of the die film 21, and the semiconductor wafer 31 with the die-bonding film is obtained. Specifically, in this step, a crack is formed in the fragile modified region 30b in the semiconductor wafer 30C, and the semiconductor wafer 31 is singulated. At the same time, in this step, in the adhesive film 20 which is in close contact with the adhesive layer 12 of the expanded dicing tape 10, deformation in each region where the semiconductor wafers 31 of the semiconductor wafer 30C are in close contact is suppressed, and On the other hand, the tensile stress generated in the dicing tape 10 acts in a state where the deformation preventing action is not caused in the portion opposite to the crack forming portion of the wafer. As a result, the portion where the crack formation portion between the crystal film 20 and the semiconductor wafer 31 is opposed is cut.

Further, in the present invention, the die-cutting film X can be used to obtain a semiconductor wafer with a die-bonding film as described above, but can also be used to obtain a bonded crystal in a case where a plurality of semiconductor wafers are laminated and three-dimensionally mounted. A semiconductor wafer of a film. A spacer may be interposed between the semiconductor wafers 31 in such a three-dimensional mounting together with the die film 21, or a spacer may not be interposed.

The present inventors have found that in the expansion step using a diced die film for obtaining a semiconductor wafer with a die-bonding film, the tensile stress generated by the expanded dicing tape in the dicing die film is 15 MPa or more. And 32 MPa or less is suitable for the tensile stress in the self-expansion of the tensile stress as a sufficient cutting force to act on the die film to cut the die film, and is suitable for avoiding the self-expanding dicing band acting after cutting The residual stress of the die film is excessively large, thereby suppressing the swell or peeling of the film or the semiconductor wafer attached to the film from the dicing tape. For example, it is as shown in the following examples and comparative examples. Further, in the semiconductor device manufacturing method of the present invention, in the first expansion step, that is, in the cold expansion step, the semiconductor wafer division body 30B or the dicing die film X of the semiconductor wafer 30A is attached to the die film 20 side. The dicing tape 10 is expanded under the condition that a tensile stress in the range of 15 to 32 MPa is generated in the crystal ribbon 10. The present semiconductor device manufacturing method including such an expanding step is suitable for cutting the die-bonding film 20 on the dicing tape 10 well, and suppressing the swell or peeling of the semiconductor wafer 31 of each of the affliction films after the dicing from the dicing tape 10. .

In the above-described cold expansion step (first expansion step), the lower the temperature condition is, the higher the tensile stress generated by the dicing tape 10 is. Therefore, the temperature conditions in the cold expansion step are as described above, for example, It is 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, still more preferably -15 ° C. According to this configuration, the relatively large tensile stress generated by the expanded crystal strip 10 in the cold expansion step at a relatively low temperature can be used as a cold expansion step (first expansion step) for cutting. The cutting force of the film 20 is then subjected to the tensile stress generated by the dicing tape at a relatively high temperature (for example, normal temperature) while performing the second separation distance of the semiconductor wafer 31 for extending the dicing film. Expansion steps.

The dicing tape 10 used in the dicing die-bonding film X of the above semiconductor device manufacturing method can exhibit at least a part of the strain value in the range of 5% or more and 30% or less as shown above in the range of 15 to 32 MPa. Stress, wherein a strain value of 5% or more is suitable for ensuring a sufficient stretch length for cutting the die film, and a strain value of 30% or less is suitable for avoiding an excessively large stretch length in the expansion step, thereby The expansion steps are implemented efficiently. The dicing tape 10 is adapted to be expanded in a form in which the die film 20 is adhered to the side of the adhesive layer 12 for expansion under the condition of generating tensile stress in the range of 15 to 32 MPa ( The above-described cold expansion step) is therefore suitable for the good cutting of the die-bonding film 20 on the dicing tape 10 by the expansion step, and suppresses the swell or peeling of the semiconductor wafer 31 of each of the affliction films after the dicing from the dicing tape 10. .

As described above, the dicing tape 10 can have a strain value of 5% or more, preferably 6% or more, more preferably 7% or more, more preferably 8% or more, and 30% or less in the tensile test. The tensile stress in the range of 15 to 32 MPa is preferably in the range of preferably 20% or less, more preferably 17% or less, still more preferably 15% or less, still more preferably 13% or less. Such a dicing tape 10 is suitable for the case where it is used in the expansion step in the form in which the adhesive film layer 20 is adhered to the side of the adhesive layer 12, while ensuring a sufficient stretching length and avoiding an excessively large stretching length. The tensile stress in the range of 15 to 32 MPa is generated.

The tensile stress which the dicing tape 10 can exhibit in the above tensile test is preferably in the range of 20 to 32 MPa as described above. The dicing tape 10 is adapted to be expanded in a form in which the die film 20 is adhered to the side of the adhesive layer 12 for expansion under the condition of generating tensile stress in the range of 20 to 32 MPa ( The above cold expansion step). In the expanding step, if the tensile stress generated by the expanded crystal cutting ribbon 10 in the crystal-cutting film X is larger than 15 MPa, the self-expanding dicing band 10 acts as a cutting force on the die-bonding crystal. The tendency of the tensile stress of the film 20 to be larger.

In the above tensile test regarding the dicing tape 10, the lower the temperature condition, the higher the tensile stress exhibited by the dicing tape 10 or its test piece, and the temperature condition under the tensile test is preferred. It is 0 ° C or less, more preferably -20 to -5 ° C, still more preferably -15 to -5 ° C, still more preferably -15 ° C. According to this configuration, the relatively large tensile stress generated by the expanded dicing tape 10 under relatively low temperature conditions can be used as the cold expansion (first expansion step) for cutting to cut the viscous film 20. The force is then expanded again at a relatively high temperature (for example, normal temperature) while suppressing the tensile stress generated by the dicing tape while extending the separation distance of the semiconductor wafer 31 after the dicing of the dicing film. Step (2nd expansion step).

The stretching speed conditions in the above tensile test of the dicing tape 10 are preferably in the range of 10 to 1000 mm/min, more preferably 100 to 1000 mm/min, as described above. The dicing tape 10 is made specific in terms of the step speed in the case where the dicing tape 10 is adhered to the adhesive film layer 12 side in the form of the bonding film 20 for the expansion step and the productivity of the semiconductor device. The tensile speed condition of the above tensile test in which the strain value produces a tensile stress in the range of 15 to 32 MPa is preferably 10 mm/min or more, more preferably 100 mm/min or more. The dicing tape 10 is prevented from being generated by a specific strain value from the viewpoint of breaking the dicing tape 10 in the case where the viscous film 20 is adhered to the adhesive film layer 12 in the form of the expansion step. The tensile speed condition of the above tensile test in the tensile stress in the range of ～32 MPa is preferably 1000 mm/min or less, more preferably 300 mm/min or less. [Examples]

[Example 1] <Production of dicing tape> 100 parts by mass of 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate 19 were contained in a reaction vessel equipped with a condenser, a nitrogen gas introduction tube, a thermometer, and a stirring device. A mixture of the mass parts, 0.4 parts by mass of benzamidine peroxide as a polymerization initiator, and 80 parts by mass of toluene as a polymerization solvent was stirred at 60 ° C for 10 hours under a nitrogen atmosphere (polymerization reaction). Thereby, a polymer solution containing the acrylic polymer P1 was obtained. Next, 1.2 parts by mass of 2-methylpropenyloxyethyl isocyanate was added to the polymer solution, and the solution was stirred at 50 ° C for 60 hours in an air atmosphere (addition reaction). Thereby, a polymer solution containing the acrylic polymer P2 was obtained. Next, 1.3 parts by mass of a polyisocyanate compound (trade name "Coronate L", Nippon Polyurethane Co., Ltd.) and 3 parts by mass of photopolymerization are added to 100 parts by mass of the acrylic polymer P2 in the polymer solution. An initiator (trade name "Irgacure 184", manufactured by BASF Corporation) was used to prepare an adhesive solution (adhesive solution S1). Next, the adhesive solution S1 was applied onto the polyfluorene-treated surface of the PET release liner having the surface subjected to the polyoxygen treatment to form a coating film, and the coating film was heated at 120 ° C for 2 minutes to remove the solvent to form a coating film. Adhesive layer with a thickness of 10 μm. Next, a polyvinyl chloride-based material (trade name "V9K", thickness: 100 μm, manufactured by Achilles Co., Ltd.) was bonded to the exposed surface of the pressure-sensitive adhesive layer, and then stored at 23 ° C for 72 hours to obtain a dicing tape. A dicing tape of Example 1 having a laminated structure including a substrate and an adhesive layer was produced in the same manner as described above.

[Example 2] A polyolefin-based substrate (trade name "DDZ", thickness: 90 μm, manufactured by Kori Co., Ltd.) having a three-layer structure of a polypropylene film/polyethylene film/polypropylene film was used instead of polychlorination. A dicing tape of Example 2 was produced in the same manner as in Example 1 except that the vinyl material (trade name "V9K", manufactured by Achilles Co., Ltd.) was used.

[Comparative Example 1] In place of a polyvinyl chloride-based material (trade name "V9K", a limited share of Achilles, except for using an ethylene-vinyl acetate copolymer substrate (trade name "NED", thickness 125 μm, manufactured by Kori Co., Ltd.) A dicing tape of Comparative Example 1 was produced in the same manner as in Example 1 except for the production of the company.

[Comparative Example 2] Achilles shares were limited except for using an ethylene-vinyl acetate copolymer substrate (trade name "RB0104", thickness 130 μm, manufactured by Kurashiki Textile Co., Ltd.) instead of polyvinyl chloride (trade name "V9K"). A dicing tape of Comparative Example 2 was produced in the same manner as in Example 1 except for the production of the company.

[Example 3] <Production of a die-bonding film> 100 parts by mass of an acrylic resin (trade name "SG-708-6", glass transition temperature (Tg) 4 ° C, manufactured by Nagase ChemteX Co., Ltd.), epoxy resin (product name "JER828", liquid at 23 ° C, manufactured by Mitsubishi Chemical Corporation) 11 parts by mass, phenol resin (trade name "MEH-7851ss", solid at 23 ° C, manufactured by Mingwa Chemical Co., Ltd.) 5 110 parts by mass of spheroidal cerium oxide (trade name "SO-25R", manufactured by Admatech Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a binder composition having a solid content concentration of 20% by mass. Solution S2. Next, the adhesive composition solution S2 was applied onto the polyfluorene-treated surface of the PET release liner having the surface subjected to the polyoxynitride treatment to form a coating film, and the coating film was heated at 130 ° C for 2 minutes to remove the solvent. A die-form film (thickness 10 μm) was prepared as an adhesive layer.

<Preparation of Cleaved Crystalline Film> After the PET release liner was peeled off from the dicing tape of Example 1, the above-mentioned adhesion film was bonded to the exposed adhesive layer. In the bonding, the center of the dicing tape is aligned with the center of the die film. Further, the bonding system uses a hand roller. Next, the adhesive layer in the dicing tape was irradiated with ultraviolet rays of 300 mJ/cm ² from the substrate side. A dicing die-bonding film of Example 3 having a laminated structure including a dicing tape and a die-bonding film was produced in the manner as described above.

[Example 4] A dicing die-bonding film of Example 4 was produced in the same manner as in Example 3, except that the dicing tape of Example 2 was used instead of the dicing tape of Example 1.

[Comparative Examples 3 and 4] Each of the dicing crystals of Comparative Examples 3 and 4 was produced in the same manner as in Example 3, except that the dicing tape of Comparative Example 1 or Comparative Example 2 was used instead of the dicing tape of Example 1. membrane.

[Measurement of Tensile Stress] The tensile stress was measured for each of the dicing tapes of Examples 1 and 2 and Comparative Examples 1 and 2 as follows. First, after the adhesive layer of the dicing tape is irradiated with ultraviolet rays of 300 mJ/cm ² from the substrate side to harden the adhesive layer, the dicing tape test piece is cut out from the dicing tape (width 20 mm × length 140) Mm). The required number of dicing tape test pieces were prepared for each of the dicing tapes of Examples 1, 2 and Comparative Examples 1 and 2. Further, a tensile tester (trade name "Autograph AGS-50NX", manufactured by Shimadzu Corporation) was used to perform a tensile test on the dicing tape test piece, and the dicing tape test was performed at a specific stretching speed. The tensile stress generated by the sheet. The stress-strain curve was obtained by this measurement. In the tensile test, the distance between the initial chucks was 100 mm, the temperature was -15 ° C, and the stretching speed was 10 mm/min, 100 mm/min, or 1000 mm/min. The stress-strain curve obtained for each dicing tape test piece is shown in Fig. 12. In the graph of Fig. 12, the horizontal axis represents the strain (%) of the dicing tape test piece, and the vertical axis represents the tensile stress (MPa) generated by the dicing tape test piece. In the graph of Fig. 12, the solid line E1 represents the stress-strain curve at a tensile speed of 10 mm/min of the dicing tape of Example 1, and the single-point chain line E1' represents the etched zone of Example 1. The stress-strain curve at a stretching speed of 100 mm/min, the broken line E1" represents the stress-strain curve at a tensile speed of 1000 mm/min of the dicing tape of Example 1, and the solid line E2 represents the dicing tape of Example 2. The stress-strain curve at a tensile speed of 10 mm/min, the single-point chain line E2' represents the stress-strain curve at a tensile speed of 100 mm/min of the dicing tape of Example 2, and the broken line E2" represents an example The stress-strain curve at a tensile speed of 1000 mm/min of the dicing tape of 2, the solid line C1 represents the stress-strain curve at a tensile speed of 10 mm/min of the dicing tape of Comparative Example 1, single-point chain line C1' represents a stress-strain curve at a tensile speed of 100 mm/min of the dicing tape of Comparative Example 1, and a broken line C1" represents a stress-strain curve at a tensile speed of 1000 mm/min of the dicing tape of Comparative Example 1. , the solid line C2 represents the stress-strain curve at a tensile speed of 10 mm/min of the dicing tape of Comparative Example 2, and the single-dot chain line C2' indicates Comparative Example 2 The stress-strain curve at a tensile speed of 100 mm/min of the dicing tape, and the broken line C2" indicates the stress-strain curve at a tensile speed of 1000 mm/min of the dicing tape of Comparative Example 2.

[Measurement of Elastic Modulus] The tensile modulus of each of the dicing tapes of Examples 1 and 2 and Comparative Examples 1 and 2 was measured as follows. First, after the adhesive layer of the dicing tape is irradiated with ultraviolet rays of 300 mJ/cm ² from the substrate side to harden the adhesive layer, the dicing tape test piece is cut out from the dicing tape (width 20 mm × length 140) Mm). The required number of dicing tape test pieces were prepared for each of the dicing tapes of Examples 1, 2 and Comparative Examples 1 and 2. In addition, a tensile test was performed on a dicing tape test piece using a tensile tester (trade name "Autograph AGS-50NX", manufactured by Shimadzu Corporation), based on the initial slope of the obtained stress-strain curve (specifically The tensile modulus was calculated based on the slope determined based on the measurement data before the strain value at the start of the tensile test. In the tensile test, the distance between the initial chucks was 100 mm, the temperature was -15 ° C, and the stretching speed was 10 mm/min, 100 mm/min, or 1000 mm/min. The tensile elastic modulus obtained by this measurement is shown in Table 1.

[Evaluation of Expansion Step] Using the respective diced crystal films of Examples 3 and 4 and Comparative Examples 3 and 4, the following bonding step and the subsequent cold expansion step were carried out.

In the bonding step, the semiconductor wafer divided body held in the wafer processing tape (trade name "ELP UB-3083D", manufactured by Nitto Denko Corporation) is bonded to the die-cut film of the crystal cut film. Thereafter, the wafer processing tape is peeled off from the semiconductor wafer divided body. The semiconductor wafer division system is formed as a producer in the following manner. First, a Si mirror wafer (diameter 300 mm, thickness 780 μm, Tokyo Chemical), which is held in a wafer processing tape (trade name "V12S-R2", manufactured by Nitto Denko Corporation), together with the ring frame Manufactured by Co., Ltd., using a dicing device (trade name "DFD6361", manufactured by DISCO Co., Ltd.) from its one side, and forming a singulation groove for its singulation by its rotating blade (width 20 to 25 μm, depth 50 μm) ). Then, after bonding the wafer processing tape (trade name "ELP UB-3083D", manufactured by Nitto Denko Corporation) to the groove forming surface, the wafer processing tape (product name "V12S-R2") is used. Si mirror wafer peeling. Thereafter, the wafer was thinned to a thickness of 20 μm by grinding from the other side of the Si mirror wafer (the surface on which the groove was not formed). The semiconductor wafer divided body (in a state of being held by the wafer processing tape) is formed as described above. A plurality of semiconductor wafers (6 mm × 12 mm) are included in the semiconductor wafer divided body.

The cold expansion step was carried out using a wafer dividing device (trade name "Die Separator DDS2300", manufactured by DISCO Corporation) using its cold expansion unit. Specifically, after attaching the ring frame to the adhesive layer of the dicing tape in the above-mentioned dicing die film with the semiconductor wafer divided body, the dicing die film is placed in the device. The cold-expanding unit of the device is used to expand the dicing ribbon of the dicing die-bonding film with the semiconductor wafer segment at a temperature of -15 ° C at a specific expansion speed and a specific expansion amount. The cold expansion step using the respective diced die films of Examples 3 and 4 and Comparative Examples 3 and 4 was as follows.

The dicing tape of the dicing die-bonding film of Example 3 having the semiconductor wafer divided body attached to the above-mentioned die film was expanded at a speed of 0.5 mm/sec and a spreading amount of 3 mm, and the result was along the semiconductor crystal. The predetermined portion of the die-cutting film of the dividing groove of the circular segment is cut in the entire region, and the embossing of the adhesive layer from the dicing tape is not generated in the semiconductor wafer with the bonded crystal film after the cutting. In the cold expansion step, the tensile stress generated by the dicing tape (the dicing tape of Example 1) expanded at a condition of an expansion speed of 0.5 mm/sec, an expansion amount of 3 mm, and a temperature of -15 ° C is equivalent to The cleavage zone of Example 1 was subjected to the above tensile test at a temperature of -15 ° C under the conditions of a tensile speed of 50 mm/min, and the tensile stress generated by the dicing tape in a state of a strain value of 12% was obtained. .

The dicing tape of the dicing die-bonding film of Example 3 with the semiconductor wafer divided body attached to the above-mentioned die film was expanded at a speed of 1 mm/sec and a spreading amount of 3 mm, and the result was along the semiconductor crystal. The predetermined portion of the die-cutting film of the dividing groove of the circular segment is cut in the entire region, and in the die film after the cutting, the area of the ridge of the adhesive layer from the dicing tape is about 20%. In the cold expansion step, the tensile stress generated by the dicing tape (the dicing tape of the embodiment 1) expanded at the expansion speed of 1 mm/sec, the expansion amount of 3 mm, and the temperature of -15 ° C is equivalent to the pair. The tensile stress generated by the dicing tape in a state in which the dicing tape of Example 1 was subjected to a tensile test at a tensile speed of 100 mm/min to a strain value of 12% in the above tensile test at a temperature of -15 °C.

The dicing tape of the dicing die-bonding film of Example 4 having the semiconductor wafer divided body attached to the above-mentioned die film was expanded at a speed of 1 mm/sec and an expansion amount of 4 mm, and the result was along the semiconductor crystal. The predetermined portion of the die-cutting film of the dividing groove of the circular segment is cut in the entire region, and the embossing of the adhesive layer from the dicing tape is not generated in the diced film after the dicing. In the cold expansion step, the tensile stress generated by the dicing tape (the dicing tape of the embodiment 2) expanded at the expansion speed of 1 mm/sec, the expansion amount of 4 mm, and the temperature of -15 ° C is equivalent to the pair. The tensile stress generated by the dicing tape in the above-mentioned tensile test of the dicing tape of Example 2 at a tensile speed of 100 mm/min to a strain value of 14% was carried out in the above tensile test.

The dicing tape of the dicing die-bonding film of Example 4 with the semiconductor wafer divided body attached to the above-mentioned die film was expanded at a speed of 1 mm/sec and an expansion amount of 8 mm, and the result was along the semiconductor crystal. The predetermined portion of the die-cutting film of the dividing groove of the circular segment is cut in the entire region, and the embossing of the adhesive layer from the dicing tape is not generated in the diced film after the dicing. In the cold expansion step, the tensile stress generated by the dicing tape (the dicing tape of the embodiment 2) expanded at the expansion speed of 1 mm/sec, the expansion amount of 8 mm, and the temperature of -15 ° C is equivalent to the pair. The tensile stress generated by the dicing tape in a state in which the dicing tape of Example 2 was subjected to a tensile test at a tensile speed of 100 mm/min to a strain value of 28% in the above tensile test at a temperature of -15 °C.

The dicing tape of the diced die-cast film of Comparative Example 3 with the semiconductor wafer divided body attached to the above-mentioned die film was expanded under the conditions of an expansion speed of 1 mm/sec and an expansion amount of 3 mm, and the result was along the semiconductor crystal. About 80% of the predetermined portion of the split film of the circular segment is not cut. In the cold expansion step, the tensile stress generated by the dicing tape (the dicing tape of Comparative Example 1) expanded at a condition of an expansion speed of 1 mm/sec, an expansion amount of 3 mm, and a temperature of -15 ° C is equivalent to The tensile stress generated by the dicing tape in a state in which the dicing tape of Comparative Example 1 was subjected to a tensile test at a tensile speed of 100 mm/min to a strain value of 12% in the above tensile test at a temperature of -15 °C.

The dicing tape of the diced die-cast film of Comparative Example 4 having the semiconductor wafer divided body attached to the above-mentioned die film was expanded under the conditions of an expansion speed of 1 mm/sec and an expansion amount of 4 mm, and the result was along the semiconductor crystal. About 20% of the predetermined portion of the split film of the circular segment is not cut. In the cold expansion step, the tensile stress generated by the dicing tape (the dicing tape of Comparative Example 2) expanded at a stretching speed of 1 mm/sec, an expansion amount of 4 mm, and a temperature of -15 ° C is equivalent to The tensile stress generated by the dicing tape in a state in which the dicing tape of Comparative Example 2 was subjected to a tensile test at a tensile speed of 100 mm/min to a strain value of 14% in the above tensile test at a temperature of -15 ° C.

[Table 1]

10‧‧‧Cutting Tape

11‧‧‧Substrate

12‧‧‧Adhesive layer

20‧‧‧Met film

21‧‧‧Met film

30a‧‧‧ split slot

30A‧‧‧Semiconductor Wafer

30b‧‧‧Modified area

30B‧‧‧Semiconductor wafer divider

30C‧‧‧Semiconductor Wafer

31‧‧‧Semiconductor wafer

41‧‧‧ ring frame

42‧‧‧Holding

43‧‧‧ jacking members

44‧‧‧ needle components

45‧‧‧Adsorption fixture

51‧‧‧Exposed body

52‧‧‧bonding line

53‧‧‧ sealing resin

R‧‧‧illuminated area

T1‧‧‧ Wafer processing tape

T1a‧‧‧ adhesive surface

T2‧‧‧ Wafer processing tape

T2a‧‧‧ adhesive face

T3‧‧‧ Wafer processing tape

T3a‧‧‧ adhesive surface

W‧‧‧Semiconductor Wafer

Wa‧‧‧1st

Wb‧‧‧2nd

X‧‧‧Cut crystal film

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a crystal cut crystal film according to an embodiment of the present invention. 2(a) to 2(d) show a part of steps in a method of manufacturing a semiconductor device according to an embodiment of the present invention. 3(a) and 3(b) show a part of steps in a method of manufacturing a semiconductor device according to an embodiment of the present invention. 4(a) to 4(c) show a part of steps in a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 5 (a) and (b) show a part of steps in a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 6 shows a part of steps in a method of manufacturing a semiconductor device according to an embodiment of the present invention. 7(a) to 7(c) show a part of steps in a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 8 shows a part of steps in a modification of the method of manufacturing a semiconductor device according to an embodiment of the present invention. 9(a) and 9(b) are diagrams showing a part of steps in a variation of the method of manufacturing a semiconductor device according to an embodiment of the present invention. Figs. 10(a) through 10(c) are diagrams showing a part of steps in a modification of the method of manufacturing a semiconductor device according to an embodiment of the present invention. 11(a) and 11(b) are diagrams showing a part of steps in a variation of the method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 12 shows stress-strain curves obtained for the dicing tapes of Examples 1, 2 and Comparative Examples 1, 2.

Claims (10)

A dicing tape having a laminated structure comprising a substrate and an adhesive layer, and capable of being subjected to a tensile test at a distance of 100 mm between the initial chucks for a dicing tape test piece having a width of 20 mm, 5 to 30 At least a portion of the strain value in the range of % shows tensile stress in the range of 15 to 32 MPa. The dicing tape of claim 1 which exhibits a tensile stress in the range of 15 to 32 MPa in the range of strain value of 5 to 20% in the above tensile test. The cleavage zone of claim 1, wherein the tensile stress is 20 to 32 MPa. The cleavage zone of claim 2, wherein the tensile stress is 20 to 32 MPa. The dicing tape of claim 1, wherein the tensile speed condition in the above tensile test is in the range of 10 to 1000 mm/min. The dicing tape of claim 3, wherein the tensile speed condition in the above tensile test is in the range of 10 to 1000 mm/min. The dicing tape of any one of claims 1 to 6, wherein the temperature condition in the above tensile test is -15 °C. A dicing die-bonding film comprising: the dicing tape of any one of claims 1 to 7, and the viscous film on the above-mentioned adhesive layer in the dicing tape. A method of fabricating a semiconductor device, comprising: a first step, comprising: a dicing tape having a laminate structure comprising a substrate and an adhesive layer, and a die bond on the adhesive layer in the dicing tape a semiconductor wafer which can be singulated into a plurality of semiconductor wafers or a semiconductor wafer divided body including a plurality of semiconductor wafers is attached to the die-bonding film side of the film; and a second step, which is used for The semiconductor wafer having the adhesion crystal film is obtained by expanding the above-mentioned dicing film by the tensile stress in the range of 15 to 32 MPa in the above-mentioned dicing ribbon. The method of manufacturing a semiconductor device according to claim 9, wherein the temperature condition in the second step is 0 ° C or lower.