TW202109725A - Die-bonding film and dicing die-bonding film - Google Patents

Abstract

A die bond film according to the present invention has a shear loss elastic modulus at 120 °C of 0.03 MPa or more and 0.09 MPa or less.

Description

Mucosal and diced wafers

The invention relates to a sticky crystal film and a diced sticky crystal film.

Previously, it is known that in the manufacture of semiconductor devices, in order to obtain semiconductor wafers for die bonding, a diced die bonding film is used. The dicing die bond film includes: a die dicing tape laminated with an adhesive layer on a substrate layer, and a die bonding layer laminated on the adhesive layer of the dicing tape in a peelable manner (for example, Patent Document 1).

As a method of obtaining a semiconductor wafer for die bonding by using the above-mentioned dicing die bonding film, a method having the following steps is known: a half-cutting step, which is used to process a semiconductor wafer into a die through a slicing process A groove is formed on the semiconductor wafer, and then the semiconductor wafer is ground to reduce the thickness; the back grinding process is to grind the semiconductor wafer after the half-cut process to reduce the thickness; the mounting process is Attach one surface of the semiconductor wafer after the back grinding process (for example, the surface on the opposite side to the circuit surface) to the die bonding layer to fix the semiconductor wafer on the dicing tape; the extension process involves half-cut processing The gap between the semiconductor chips is enlarged; the incision maintaining process is to maintain the gap between the semiconductor chips; the picking process is to peel off the die-bonding layer and the adhesive layer, and take out the semiconductor with the die-bonding layer attached. Chip; and the die bonding process, which is to bond the semiconductor chip in the state where the die bonding layer is attached to the adherend (such as the mounting substrate, etc.). The semiconductor wafer for die bonding obtained in the above manner is laminated under heating conditions (for example, 120°C). [Prior Technical Literature] [Patent Literature]

[Patent Document 1]: Japanese Patent Application Publication No. 2015-185591

[The problem solved by the invention]

The cut semiconductor wafers for die bonding (also referred to as semiconductor wafers with die bonding layers) are stacked under heating conditions, for example, in a stepwise manner that is staggered by a predetermined distance in the same direction. However, during the stacking, Sometimes the bonding layer is peeled from the surface of the semiconductor wafer.

In addition, in the method of obtaining the semiconductor wafer for die bonding as described above, since a semiconductor wafer having a relatively flat surface in a cross-sectional view is generally used, most of the semiconductor wafers for die bonding that have been cut have a relatively flat surface in a cross-sectional view. However, sometimes a semiconductor wafer for die bonding having a surface with a plurality of bending parts in a cross-sectional view (for example, a surface with undulations in a cross-sectional view) is sometimes obtained. Furthermore, the peeling of the die-bonding layer from the surface of the semiconductor wafer during the above-mentioned lamination is more remarkable in the semiconductor wafer for die-bonding having a surface including a plurality of bending parts in a cross-sectional view.

Therefore, the subject of the present invention is to provide a die-bonding film that is relatively difficult to peel off from the surface of a semiconductor wafer during lamination under heating, and a dicing die-bonding film in which the die-bonding layer is composed of the above-mentioned die-bonding film. [Technical means to solve the problem]

The shear loss modulus of the die bond film of the present invention at 120° C. is 0.03 MPa or more and 0.09 MPa or less.

For the above-mentioned sticky film, it is preferable that the shear loss modulus at 180° C. is 0.01 MPa or more and 0.05 MPa or less.

For the above die bond film, it is preferable that the ratio of the shear loss modulus of the die bond film at 180°C to the shear loss modulus of the die bond film at 120°C is 0.5 or more and 0.8 or less.

For the above-mentioned sticky film, it is preferably The shear bonding force to bare wafers at 120°C is 0.1 MPa or more and 0.4 MPa or less, The shear bonding force to bare wafers at 180°C is above 0.05 MPa and below 0.3 MPa.

For the above-mentioned mucous film, it is preferable that the elastic modulus measured by dynamic viscoelasticity at room temperature and 900 Hz is 1 GPa or more and less than 3 GPa.

For the above-mentioned sticky film, it is preferably It is thermoset, Cured at 175°C for 1 hour and exposed to an environment of 135°C and a relative humidity of 85%RH for 100 hours, the moisture absorption rate is 1% by mass or less.

For the above-mentioned sticky film, it is preferably It is thermoset, The tensile storage modulus at 130°C after curing at 175°C for 1 hour is 0.2 MPa or more and 1.0 MPa or less.

For the above-mentioned sticky film, it is preferably It is thermoset, After curing at 175°C for 5 hours and exposed to 100 hours in an environment of 135°C and 85%RH, the shear adhesion to bare wafers is above 15 MPa. The shear adhesion to bare wafers after curing at 175°C for 5 hours and exposure to 135°C and 85%RH for 100 hours is relative to curing at 175°C for 5 hours and at 135°C and relative humidity The ratio of shear adhesion to bare wafers before exposure in an environment of 85% RH is 0.6 or more.

The diced chip adhesive film of the present invention has: Laminating a dicing tape with an adhesive layer on the substrate layer; and The die-bonding layer laminated on the adhesive layer of the above-mentioned die-cutting tape; The above-mentioned sticky layer is composed of any of the above-mentioned kinds of sticky films.

Hereinafter, an embodiment of the present invention will be described.

[Mucous film] The shear loss modulus of the die bond film of this embodiment at 120° C. is 0.03 MPa or more and 0.09 MPa or less. The die bond film of this embodiment is used to laminate a plurality of semiconductor wafers on each other. Furthermore, the lamination of a plurality of semiconductor wafers of the die bond film is usually performed at 120°C, and the plural semiconductor wafers laminated by the die bond film are usually resin-sealed (molded) at 180°C. That is, the die bond film is usually exposed to a temperature of 120°C when a plurality of semiconductor wafers are laminated with each other, and is exposed to a temperature of 180°C during resin sealing (molding).

The shear loss modulus at 120℃ can be obtained as follows: measure a circular surface of the mucosal film punched into a cylindrical shape of Φ7.5 mm×1 mm and give a shear vibration with a frequency of 1 Hz at a temperature of 120℃ When the shear vibration is transmitted to the other circular surface, the measured value is analyzed to obtain it. The measurement of the above-mentioned shear loss modulus and the analysis of the measured value can be performed using a viscoelasticity measuring device (for example, manufactured by Rheometric Scientific, model ARES).

The die bond film of this embodiment preferably has a shear loss modulus at 180°C of 0.01 MPa or more and 0.05 MPa or less. The shear loss modulus at 180°C can be measured in the same manner as described above, except that the temperature is set to 180°C.

The die bond film of this embodiment preferably has a ratio of the shear loss modulus at 180°C to the shear loss modulus at 120°C of 0.5 or more and 0.8 or less.

The die bond film preferably has a shear adhesion force of 0.1 MPa or more and 0.4 MPa or less to a bare wafer at 120° C., and a shear adhesion force of 0.05 MPa or more and 0.3 MPa or less to the bare wafer at 180° C. The shear bonding force at 120°C can be measured as follows: the die bond layer is attached to a bare chip with a thickness of 0.5 mm, 3 mm×3 mm under the conditions of a temperature of 120°C, a speed of 10 mm/s, and a pressure of 0.15 MPa ( It is obtained by cutting the bare wafer) to make a test piece, and use a shear tester (manufactured by Dage Corporation, Dage4000) on the test piece with a measurement speed of 500 μm/s, a measurement gap of 100 μm, and a table temperature of 120°C. The conditions are measured by this. In addition, the above-mentioned measurement is performed approximately 20 seconds after the sample is placed on the measurement table. Regarding the shear bonding strength at 180°C, the temperature of the table is set to 180°C, and the measurement can be carried out in the same manner as described above, except that the temperature is set to 180°C.

The mucosal film preferably has an elastic modulus of 1 GPa or more and less than 3 GPa, measured by dynamic viscoelasticity at room temperature (23° C.) and 900 Hz. The elastic modulus before curing obtained by dynamic viscoelasticity measurement at room temperature and 900 Hz can be obtained as follows: using a dynamic viscoelastic device (manufactured by Rheogel Co., Rheogel-E4000), using automatic static load mode to increase the temperature The crystal adhesion layer before curing is measured at a speed of 5°C/min at -50°C to 100°C to obtain the result.

The die attach film preferably has thermosetting properties. By making the die-bonding film contain at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group, it is possible to impart thermosetting properties to the die-bonding film.

When the adhesive film has thermosetting properties, the adhesive film is preferably cured at 175° C. for 1 hour and exposed to an environment of 135° C. and a relative humidity of 85% RH for 100 hours. The moisture absorption rate is 1% by mass or less. The above moisture absorption rate can be obtained by curing at 175°C for 1 hour and before exposure in an environment of 135°C and relative humidity 85%RH, and curing at 175°C for 1 hour and at 135°C and relative humidity 85%RH. Calculate the mass change after 100 hours of exposure in the environment.

When the mucosal film has thermosetting properties, the mucosal film preferably has a tensile storage modulus at 130°C of 0.2 MPa or more and 1.0 MPa or less after being cured at 175°C for 1 hour. The tensile storage modulus at 130°C after curing at 175°C for 1 hour is measured using a solid viscoelasticity measuring device (for example, model RSAIII, manufactured by Rheometric Scientific Co., Ltd.). In detail, a test piece with a length of 40 mm (measured length) and a width of 10 mm was cut from the sticky layer after curing at 175°C for 1 hour, and a solid viscoelasticity measuring device (for example, model RSAIII, Rheometric Scientific Co., Ltd.) was used. Manufactured by the company), the tensile storage modulus of the above test piece was measured in the temperature range of -30～280℃ under the conditions of frequency of 1 Hz, heating rate of 10℃/min, and distance between chucks of 22.5 mm. At this time, it can be obtained by reading the value at 130°C.

When the die-attach film has thermosetting properties, the die-attach film is preferably cured at 175°C for 5 hours and exposed to 100 hours in an environment of 135°C and a relative humidity of 85%RH to shear adhesion to bare wafers The shear adhesion to bare wafers after curing at 175°C for 5 hours and exposure to 100 hours in an environment of 135°C and 85%RH is relative to that of curing at 175°C for 5 hours and curing at 15 MPa or more. The ratio of the shear adhesion to the bare wafer before exposure in an environment of 135°C and a relative humidity of 85%RH is 0.6 or more. In addition, the die bond film is preferably cured at 175° C. for 5 hours and exposed to an environment of 135° C. and a relative humidity of 85% RH. The shear adhesion to the bare wafer is less than 50 MPa. Furthermore, the adhesive film is preferably cured at 175°C for 5 hours and exposed to an environment of 135°C and a relative humidity of 85%RH for 100 hours. The shear adhesion to the bare wafer is relative to that of curing at 175°C. The ratio of the shear adhesion to the bare wafer before exposure in an environment of 135°C and 85%RH in an environment of 135°C and a relative humidity of 85%RH is 0.9 or less.

After curing at 175°C for 5 hours and exposure to 100 hours in an environment of 135°C and 85%RH, the shear adhesion to the bare wafer can be measured as follows: the adhesive film is attached to the wafer under the above conditions The bare wafer was cured at 175°C for 5 hours, and exposed to an environment of 135°C and a relative humidity of 85%RH for 100 hours. The obtained object was used as a test piece, and a shear tester (manufactured by Dage Corporation, Dage4000) was used for the above The test piece was measured under the conditions of a measurement speed of 500 μm/s, a measurement gap of 100 μm, and a table temperature of 23°C. In addition, the above-mentioned measurement is performed after the sample is placed on the measurement table for about 20 seconds. In addition, for the shear adhesion to the bare wafer before curing at 175°C for 5 hours and exposure to 100 hours in an environment of 135°C and 85%RH, the adhesive film can be attached to the bare wafer under the above conditions. The bare wafer was cured at 175°C for 5 hours, and the obtained object was used as a test piece, and the measurement was performed in the same manner as described above, except that the obtained object was used as a test piece.

When the adhesive film contains a thermosetting resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. Wait. Only one kind of the above-mentioned thermosetting resin may be used, or two or more kinds may be used in combination. From the viewpoint that the content of ionic impurities, etc., which cause corrosion of the semiconductor wafer as an adherend, is small, the thermosetting resin is preferably an epoxy resin. In addition, as the curing agent of the epoxy resin, a phenol resin is preferable.

As the above epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene Type, sulphur type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, trihydroxyphenylmethane type, glycidylamine type ring Oxygen resin and so on. Among them, from the viewpoints of sufficient reactivity with the phenol resin as a curing agent and excellent heat resistance, preferred are novolak type epoxy resins, biphenyl type epoxy resins, trihydroxyphenylmethane type epoxy resins, Tetraphenol ethane type epoxy resin.

Examples of phenol resins that can be used as curing agents for epoxy resins include novolac-type phenol resins, resol-type phenol resins, and polyoxystyrenes such as polyparaoxystyrene. As a novolak type phenol resin, a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tertiary butylphenol novolak resin, a nonylphenol novolak resin, etc. are mentioned, for example. Only one kind of the above phenol resin may be used, or two or more kinds may be used in combination. Among them, when used as a curing agent for epoxy resin used as a bonding agent for crystal bonding, from the viewpoint of the tendency to improve the connection reliability of the bonding agent, phenol novolak resin or phenol aromatic resin is preferred. Alkyl resin.

When the adhesive film contains an epoxy resin and a phenol resin as a curing agent for the epoxy resin, from the viewpoint of fully proceeding the curing reaction of the epoxy resin and the phenol resin, it is preferable to compare with the epoxy resin The epoxy group is 1 equivalent, the hydroxyl group in the phenol resin is 0.5 equivalent or more and 2.0 equivalent or less, and the phenol resin is contained, and it is more preferably contained in an amount of 0.7 equivalent or more and 1.5 equivalent or less.

Regarding the content ratio of the above-mentioned thermosetting resin in the adhesive film, from the viewpoint of appropriately performing the function as the above-mentioned thermosetting adhesive in the adhesive film, it is preferably 5 mass relative to the total mass of the adhesive film % Or more and 60% by mass or less, more preferably 10% by mass or more and 50% by mass or less.

When the die bond film contains a thermoplastic resin having a thermosetting functional group, as the above-mentioned thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The thermosetting functional group-containing acrylic resin is preferably a polymer containing monomer units derived from (meth)acrylate as the largest monomer unit in terms of mass ratio. Examples of (meth)acrylates include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates. As a thermosetting functional group, a glycidyl group, a carboxyl group, a hydroxyl group, an isocyanate group etc. are mentioned, for example. Among them, glycidyl and carboxyl groups are preferred. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin are particularly preferred. In addition, when the die-bonding layer contains a thermosetting functional group-containing acrylic resin, it preferably contains a curing agent. As said curing agent, for example, a polyphenol-based compound may be mentioned.

The die bond film may include a thermoplastic resin in addition to the above-mentioned thermosetting resin. As the thermoplastic resin, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide 6, polyamide 6, 6 and other polyamide resins, phenoxy resin, acrylic resin, PET, PBT and other saturated polyester resins, Polyamide imide resin, fluororesin, etc. Only one type of the above-mentioned thermoplastic resin may be used, or two or more types may be used in combination. As the above-mentioned thermoplastic resin, an acrylic resin is preferred from the viewpoint that it has less ionic impurities and high heat resistance, and therefore it is easy to ensure the connection reliability of the die-bonding layer.

The above-mentioned acrylic resin is preferably a polymer containing monomer units derived from (meth)acrylate as the most monomer unit in terms of mass ratio. Examples of (meth)acrylates include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates. The above-mentioned acrylic resin may contain monomer units derived from other components copolymerizable with (meth)acrylate. Examples of the above-mentioned other components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, propylene Monomers containing functional groups such as nitriles, various polyfunctional monomers, etc. From the viewpoint of achieving high cohesion in the self-adhesive crystal layer, the above-mentioned acrylic resin is preferably a (meth)acrylate (especially an alkyl (meth)acrylate with an alkyl group of less than 4 carbon atoms) and a carboxyl group-containing monomer Copolymers with nitrogen-containing monomers and polyfunctional monomers (especially polyglycidyl-based polyfunctional monomers), more preferably ethyl acrylate and butyl acrylate, acrylic acid and acrylonitrile and (meth)acrylic acid Copolymer of polyglycidyl esters.

When the adhesive film contains the above-mentioned thermoplastic resin in addition to the above-mentioned thermosetting resin, the content of the above-mentioned thermoplastic resin is relative to the organic components (for example, thermosetting resin, thermoplastic resin, curing catalyst) other than fillers in the adhesive film. The total mass of the silane coupling agent and dye) is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, and still more preferably 45% by mass or more and 55% by mass or less.

The mucous film preferably contains a filler. By including the filler, various physical properties such as electrical conductivity, thermal conductivity, and elastic modulus can be adjusted. As the filler, an inorganic filler and an organic filler may be mentioned, and an inorganic filler is particularly preferable. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate Whiskers, boron nitride, crystalline silicon dioxide, amorphous silicon dioxide, and simple metals such as aluminum, gold, silver, copper, nickel, alloys, amorphous carbon black, graphite, etc. The filler can have various shapes such as spherical, needle-like, and flake-like shapes. Only one kind of the above-mentioned filler may be used, or two or more kinds may be used in combination.

The average particle size of the filler is preferably 0.005 μm or more and 10 μm or less, more preferably 0.05 μm or more and 1 μm or less. By setting the average particle size to 0.005 μm or more, the wettability and adhesion to adherends such as semiconductor wafers can be improved. By making the average particle diameter 10 μm or less, heat resistance can be ensured. The average particle size of the filler can be determined using, for example, a photometric particle size distribution meter (for example, a brand name "LA-910", manufactured by HORIBA, Ltd.).

When the mucous film contains a filler, the content of the filler relative to the total mass of the mucous film is preferably 30% by mass or more and 70% by mass or less, more preferably 40% by mass or more and 60% by mass or less, and still more It is preferably 42% by mass or more and 55% by mass or less.

The mucosal film may contain other ingredients than the above as needed. Examples of components other than those described above include curing catalysts, flame retardants, silane coupling agents, ion scavengers, dyes, and the like. As said flame retardant, for example, antimony trioxide, antimony pentoxide, brominated epoxy resin, etc. may be mentioned. As the above-mentioned silane coupling agent, for example, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxy Propyl methyl diethoxy silane and so on. As said ion scavenger, hydrotalcite, bismuth hydroxide, benzotriazole, etc. are mentioned, for example. Only one kind of the above-mentioned other components may be used, or two or more kinds may be used in combination.

The thickness of the mucous film (the total thickness in the case of a laminate) is not particularly limited, and is, for example, 1 μm or more and 200 μm or less. The upper limit of the thickness is preferably 100 μm, more preferably 80 μm. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm. The thickness of the mucous film can be obtained by measuring the thickness of five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205), and calculating the arithmetic average of these thicknesses.

The glass transition temperature (Tg) of the mucous film is preferably 0°C or higher, more preferably 10°C or higher. By setting the glass transition temperature to 0°C or higher, the mucosal film can be easily cut at a low temperature (for example, -15°C to 5°C). The upper limit of the glass transition temperature of the mucous film is, for example, 100°C.

As the sticky film, a sticky film including a single layer of sticky film can be exemplified. Furthermore, in this specification, a single layer refers to a layer formed of the same composition, and includes a plurality of layers formed of the same composition. The sticky film is not limited to a single layer, and may have a multi-layer structure formed by laminating two or more layers with different compositions.

[Cut Crystal Mucosal Film] Next, referring to FIG. 1, the diced die bonding film 20 of this embodiment will be described.

As shown in FIG. 1, the dicing die bonding film 20 of this embodiment includes: a dicing tape 10 laminated with an adhesive layer 2 on a substrate layer 1, and a dicing tape 10 laminated on the adhesive layer 2 of the dicing tape 10 Sticky crystal layer 3. The die bonding layer 3 of the diced die bonding film 20 of this embodiment is composed of the die bonding film of the above-mentioned embodiment. In the dicing die bonding film 20, the semiconductor wafer is attached to the die bonding layer 3. In the cutting of the semiconductor wafer using the die bonding film 20, the die bonding layer 3 is also cut together with the semiconductor wafer. The die bonding layer 3 is cut into a size equivalent to the size of a plurality of singulated semiconductor wafers. Thereby, a semiconductor wafer with the crystal layer 3 attached can be obtained.

The base layer 1 is used to support the adhesive layer 2. The base material layer 1 contains resin. Examples of the resin contained in the base layer 1 include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyether imide, polyamide, and wholly aromatic polyamide. Amide, polyvinyl chloride, polyvinylidene chloride, polyphenyl sulfide, fluororesin, cellulose resin, silicone resin, etc.

Examples of polyolefins include homopolymers of α-olefins, copolymers of two or more kinds of α-olefins, block polypropylene, random polypropylene, one or more kinds of α-olefins, and others. Copolymers of vinyl monomers, etc.

As the homopolymer of α-olefin, a homopolymer of α-olefin having a carbon number of 2 or more and 12 or less is preferable. As said homopolymer, ethylene, propylene, 1-butene, 4-methyl-1-pentene, etc. are mentioned.

Examples of copolymers of two or more α-olefins include ethylene/propylene copolymers, ethylene/1-butene copolymers, ethylene/propylene/1-butene copolymers, and ethylene/carbon number of 5 to 12 Α-olefin copolymers, propylene/ethylene copolymers, propylene/1-butene copolymers, propylene/α-olefin copolymers with 5 to 12 carbon atoms, etc.

Examples of copolymers of one or more types of α-olefins and other vinyl monomers include ethylene-vinyl acetate copolymer (EVA) and the like.

The polyolefin may be what is called an α-olefin-based thermoplastic elastomer. Examples of the α-olefin-based thermoplastic elastomer include a combination of a propylene·ethylene copolymer and a propylene homopolymer, or a propylene·ethylene·α-olefin terpolymer having 4 or more carbon atoms. As a commercially available product of the α-olefin-based thermoplastic elastomer, for example, Vistamaxx 3980 (manufactured by Exxon Mobil Chemical Company) which is a propylene-based elastomer resin can be mentioned.

The base material layer 1 may contain one kind of the above-mentioned resin, and may also contain two or more kinds of the above-mentioned resin. Furthermore, when the adhesive layer 2 contains an ultraviolet curable adhesive described later, the base layer 1 is preferably configured to have ultraviolet light permeability.

The base material layer 1 may have a single-layer structure or a multilayer structure. The base material layer 1 may be obtained by non-stretch forming, or may be obtained by stretch forming, and is preferably obtained by stretch forming. When the base material layer 1 has a laminated structure, the base material layer 1 preferably has a layer containing an elastomer (hereinafter referred to as an elastomer layer) and a layer containing a non-elastomeric body (hereinafter referred to as a non-elastomeric layer). By providing the base material layer 1 with an elastomer layer and a non-elastomeric layer, the elastomer layer can function as a stress relaxation layer that relaxes tensile stress. That is, the tensile stress generated in the base layer 1 can be made small, and therefore the base layer 1 can be made to have an appropriate hardness and relatively easy to stretch. Thereby, it is possible to improve the severability of several semiconductor wafers reciprocating from the semiconductor wafer. In addition, it is possible to prevent the base layer 1 from cracking and breaking during the severing in the expanding step. Furthermore, in this specification, the elastomer layer refers to a low elastic modulus layer whose tensile storage modulus at room temperature is lower than that of the non-elastomeric layer. As the elastomer layer, a layer with a tensile storage modulus of 10 MPa or more and 100 MPa or less at room temperature can be mentioned. As a non-elastomeric layer, a layer having a tensile storage modulus of 200 MPa or more at room temperature can be mentioned. And the layer below 500 MPa.

The elastomer layer may include one type of elastomer or two or more types of elastomers, and preferably includes an α-olefin-based thermoplastic elastomer. The non-elastomeric layer may contain one type of non-elastomeric body or two or more types of non-elastomeric body, and preferably contains the metallocene PP described later. When the base layer 1 has an elastomer layer and a non-elastomeric layer, the base layer 1 is preferably formed as a three-layer structure (non-elastomeric layer) with the elastomer layer as the center layer and non-elastomeric layers on opposite sides of the center layer. Elastomer layer/Elastomer layer/Non-elastomeric layer).

In addition, as described above, in the incision maintaining step, hot air (e.g., 100 to 130°C) is blown to the dicing mucous film maintained at room temperature (e.g., 23°C) to make the dicing mucous film After heat shrinking, it is cooled and solidified. Therefore, the outermost layer of the substrate layer 1 preferably contains a resin whose melting point is close to the temperature of the hot air blown to the dicing belt. Thereby, the outermost layer melted by blowing hot air can be solidified more quickly. As a result, in the incision maintaining step, the incision can be maintained more sufficiently.

When the base material layer 1 has a laminated structure of an elastomer layer and a non-elastomeric layer, the elastomer layer contains an α-olefin-based thermoplastic elastomer, and the non-elastomeric layer contains polyolefins such as metallocene PP described later, the elastomer layer is preferably relative to The total mass of the elastomer forming the elastomer layer includes 50% by mass or more and 100% by mass or less of the α-olefin-based thermoplastic elastomer, more preferably 70% by mass or more and 100% by mass or less, and still more preferably 80% by mass More than and 100% by mass or less, particularly preferably 90% by mass or more and 100% by mass or less, and most preferably 95% by mass or more and 100% by mass or less. By including the α-olefin-based thermoplastic elastomer in the above range, the affinity between the elastomer layer and the non-elastomeric layer becomes high, and therefore the base layer 1 can be extrusion-molded relatively easily. In addition, the elastomer layer can be made to function as a stress relaxation layer, so that the die-bonding layer 3 and the semiconductor wafer attached to the die-bonding layer 3 can be cut efficiently.

When the base layer 1 has a laminated structure of an elastomer layer and a non-elastomeric layer, the base layer 1 is preferably formed by co-extruding the elastomer and the non-elastomeric layer to form a co-extruded structure of the elastomer layer and the non-elastomeric layer. Obtained by extrusion molding. As the co-extrusion molding, any appropriate co-extrusion molding that is usually performed in the production of films, sheets, etc. can be adopted. In the co-extrusion molding, since the base material layer 1 can be obtained efficiently and inexpensively, it is preferable to use a blow molding method or a co-extrusion T-die method.

When the base material layer 1 having a laminated structure is obtained by coextrusion, the elastomer layer and the non-elastomeric layer are in contact with each other while being heated and melted. Therefore, the difference in melting point between the elastomer and the non-elastomeric is preferred small. By making the difference in melting point small, it is possible to prevent excessive heat from being applied to either the elastomer or the non-elastomer having a low melting point, and therefore it is possible to suppress any of the elastomer or the non-elastomer having a low melting point. Thermal degradation occurs to produce by-products. In addition, it is also possible to suppress the occurrence of build-up failure between the elastomer layer and the non-elastomeric layer due to excessive decrease in the viscosity of either the elastomer or the non-elastomeric body having a low melting point. The difference in melting point between the elastomer and the non-elastomeric body is preferably 0°C or more and 70°C or less, more preferably 0°C or more and 55°C or less. The melting point of the above-mentioned elastomer and the above-mentioned non-elastomeric body can be determined by differential scanning calorimetry (DSC) analysis. For example, a differential scanning calorimeter device (manufactured by TA Instruments Inc., model DSC Q2000) can be used to heat up to 200°C at a heating rate of 5°C/min under a nitrogen gas flow to obtain the peak temperature of the endothermic peak. Perform the measurement.

The thickness of the substrate layer 1 is preferably 55 μm or more and 195 μm or less, more preferably 55 μm or more and 190 μm or less, still more preferably 55 μm or more and 170 μm or less, and most preferably 60 μm or more and 160 μm the following. By setting the thickness of the base material layer 1 in the above range, the dicing tape can be efficiently manufactured, and the die-bonding layer 3 and the semiconductor wafer attached to the die-bonding layer 3 can be efficiently cut. The thickness of the base material layer 1 can be obtained by, for example, measuring the thickness of five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and averaging the thicknesses.

In the base material layer 1 laminated with an elastomer layer and a non-elastomeric layer, the thickness of the non-elastomeric layer relative to the thickness of the elastomer layer is preferably 1/25 or more and 1/3 or less, more preferably 1/25 or more and 1/ 3.5 or less, more preferably 1/25 or more and 1/4 or less, particularly preferably 1/22 or more and 1/4 or less, and most preferably 1/20 or more and 1/4 or less. By setting the ratio of the thickness of the non-elastomeric layer to the thickness of the elastomeric layer within the above range, the die-bonding layer 3 and the semiconductor wafer attached to the die-bonding layer 3 can be efficiently cut.

The elastomer layer may have a single-layer (one-layer) structure or a multilayer structure. The elastomer layer has preferably a 1-layer to 5-layer structure, more preferably a 1-layer to 3-layer structure, still more preferably a 1-layer to 2-layer structure, and most preferably a 1-layer structure. When the elastomer layer has a laminated structure, all layers may include the same elastomer, or at least two layers may include different elastomers.

The non-elastomeric layer may have a single-layer (one-layer) structure or a multilayer structure. The non-elastomeric layer preferably has a 1-layer to 5-layer structure, more preferably has a 1-layer to 3-layer structure, still more preferably has a 1-layer to 2-layer structure, and most preferably has a 1-layer structure. When the non-elastomeric layer has a laminated structure, all layers may contain the same non-elastomeric body, or at least two layers may contain different non-elastomeric bodies.

The non-elastomeric layer preferably contains as a non-elastomeric polypropylene resin (hereinafter referred to as metallocene PP) as a polymerization product obtained by using a metallocene catalyst. As the metallocene PP, a propylene/α-olefin copolymer which is a polymerization product of a metallocene catalyst can be exemplified. By including the metallocene PP in the non-elastomeric layer, the dicing tape can be efficiently manufactured, and the die-bonding layer 3 and the semiconductor wafer attached to the die-bonding layer 3 can be efficiently cut. In addition, as commercially available metallocene PP, WINTEC WXK1233 and WINTEC WMX03 (all manufactured by Japan Polypropylene Corporation) can be cited.

Here, the metallocene catalyst includes a transition metal compound of Group 4 of the Periodic Table (so-called metallocene compound) and an auxiliary catalyst that can react with the metallocene compound to activate the metallocene compound into a stable ionic state. As the catalyst, the transition metal compound of Group 4 of the periodic table includes a ligand having a cyclopentadienyl skeleton, and the metallocene catalyst includes an organoaluminum compound as necessary. The metallocene compound is a cross-linked metallocene compound capable of stereoregular polymerization of propylene.

Among the above-mentioned propylene/α-olefin copolymers as the polymerization product of the metallocene catalyst, the propylene/α-olefin random copolymer as the polymerization product of the metallocene catalyst is preferred, and the above-mentioned polymerization product as the metallocene catalyst Among the propylene/α-olefin random copolymers, propylene/α-olefin random copolymers with a carbon number of 2 as the polymerization product of metallocene catalysts, and propylene as the polymerization product of metallocene catalysts /Α-olefin random copolymers with 4 carbons, and propylene/α-olefin random copolymers in the propylene/α-olefin random copolymers with 5 carbons as the polymerization product of metallocene catalysts, these Among them, the most preferred is a propylene/ethylene random copolymer as a polymerization product of a metallocene catalyst.

Regarding the above-mentioned propylene/α-olefin random copolymer as the polymerization product of the metallocene catalyst, from the viewpoints of the film-forming properties of co-extrusion with the above-mentioned elastomer layer and the cutting properties of the semiconductor wafer attached to the dicing film From the point of view, the melting point is preferably 80°C or higher and 140°C or lower, particularly 100°C or higher and 130°C or lower. The melting point of the above-mentioned propylene/α-olefin random copolymer as the polymerization product of the metallocene catalyst can be determined by the above-mentioned method.

Here, if the above-mentioned elastomer layer is arranged on the outermost layer of the base material layer 1, when the base material layer 1 has become a roll, the above-mentioned elastomer layers arranged on the outermost layer are easy to adhere to each other (easy to stick together) . Therefore, it is difficult to rewind the base material layer 1 from the rolled body. In contrast, in the preferred form of the base layer 1 of the laminated structure described above, since it is a non-elastomeric layer/elastomeric layer/non-elastomeric layer, that is, a non-elastomeric layer is arranged on the outermost layer, the base of the aforementioned form is The material layer 1 has excellent blocking resistance. Thereby, it is possible to suppress the delay in the manufacture of the semiconductor device using the dicing die attach film 20 due to adhesion.

The non-elastomeric layer preferably contains a resin having a melting point of 100°C or more and 130°C or less and a molecular weight dispersion (mass average molecular weight/number average molecular weight) of 5 or less. As said resin, metallocene PP can be mentioned. By making the non-elastomeric layer contain the resin as described above, the non-elastomeric layer can be cooled and solidified more quickly in the incision maintaining step. Therefore, it is possible to more sufficiently suppress the shrinkage of the base material layer 1 after thermally shrinking the diced film. Thereby, the incision can be maintained more fully in the incision maintaining step.

The adhesive layer 2 contains an adhesive. The adhesive layer 2 holds the dicing film as the die-bonding layer 3 by bonding.

As the above-mentioned adhesive, an adhesive capable of reducing the adhesive force due to an external action during the use of the dicing die sticking film 20 (hereinafter referred to as an adhesive reduction type adhesive) can be mentioned.

In the case of using a reduced adhesion type adhesive as an adhesive, the adhesive layer 2 can be divided into a state in which the adhesive layer 2 exhibits a relatively high adhesive force during the use of the diced die sticking film 20 (hereinafter referred to as a high adhesion state). ) And a state that exhibits relatively low adhesion (hereinafter referred to as a low adhesion state). For example, when the die-bonding layer 3 and the semiconductor wafer attached to the die-bonding layer 3 are used for slicing, in order to prevent the singulated die-bonding layer 3 from swelling or generating from the adhesive layer 2 by the slicing Peel off and use high adhesion state. In contrast, after the die bonding layer 3 and the semiconductor wafers attached to the die bonding layer 3 are cut, in order to pick up a plurality of singulated semiconductor wafers with die bonding layers, in order to easily pick up a plurality of semiconductor wafers from the adhesive layer 2 A semiconductor chip with an adhesive crystal layer, using a low adhesion state.

As the aforementioned adhesive reduction type adhesive, for example, an adhesive that can be cured by irradiating radiation during the use of the chip adhesive film 20 (hereinafter, referred to as a radiation curing adhesive).

As the above-mentioned radiation-curable adhesive, for example, an adhesive of a type that is cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays. Among these, it is preferable to use an adhesive that is cured by irradiating ultraviolet rays (ultraviolet curing adhesive).

As the above-mentioned radiation-curable adhesive, for example, an additive radiation-curable adhesive can be exemplified, which contains a basic polymer such as an acrylic polymer, and a radiation polymerizable monomer having a functional group such as a radiation polymerizable carbon-carbon double bond. Body composition, radiation polymerizable oligomer composition.

As said acrylic polymer, the acrylic polymer containing the monomer unit derived from (meth)acrylate is mentioned. Examples of (meth)acrylates include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates.

The adhesive layer 2 may include an external crosslinking agent. As the external crosslinking agent, any external crosslinking agent can be used as long as it can react with the acrylic polymer as the base polymer to form a crosslinked structure. As said external crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound, an aziridine compound, and a melamine type crosslinking agent etc. are mentioned, for example.

Examples of the radiation polymerizable monomer components include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol Tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, etc. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene. The content ratio of the radiation polymerizable monomer component and the radiation polymerizable oligomer component in the above-mentioned radiation curable adhesive can be selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

The above-mentioned radiation curable adhesive preferably contains a photopolymerization initiator. As the photopolymerization initiator, for example, α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, and photoactive oxime-based compounds may be mentioned. Compounds, benzophenone-based compounds, thioxanthone-based compounds, camphorquinone, halogenated ketones, phosphonium oxides, phosphonates, etc.

In addition to the above-mentioned components, the adhesive layer 2 may also include coloring agents such as crosslinking accelerators, tackifiers, anti-aging agents, pigments, or dyes, and the like.

The thickness of the adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and still more preferably 5 μm or more and 25 μm or less. The thickness of the adhesive layer 2 can be obtained by, for example, measuring the thickness of five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

The diced die bonding film 20 of this embodiment is used as an auxiliary component for manufacturing a semiconductor integrated circuit, for example. Hereinafter, a specific example of using the dicing die bonding film 20 will be described. Hereinafter, an example of using the dicing die attach film 20 in which the base layer 1 is one layer will be described.

The method of manufacturing a semiconductor integrated circuit has the following steps: a half-cutting step, which is to process a semiconductor wafer into a die by a severing process, form grooves on the semiconductor wafer, and then grind the semiconductor wafer Thinning the thickness; the back grinding process is to grind the semiconductor wafer after the half-cut process to reduce the thickness; the mounting process is to grind one side of the semiconductor wafer after the back grinding process (for example, the circuit surface is The opposite side) is attached to the die bonding layer 3 to fix the semiconductor wafer to the dicing tape 10; the expansion step is to expand the distance between the semi-cut semiconductor wafers; the notch maintenance step is to maintain the semiconductor The distance between the wafers; the pick-up process, which peels off the die-bonding layer 3 and the adhesive layer 2, and takes out the semiconductor chip (die) with the die-bonding layer 3 attached; and the die-bonding process, which is The semiconductor chip (die) in the state where the die bonding layer 3 is attached is bonded to the adherend. When performing these steps, the dicing tape (chip dicing film) of this embodiment is used as a manufacturing auxiliary tool.

In the half-cutting process, as shown in FIG. 2A and FIG. 2B, a half-cutting process for cutting the semiconductor integrated circuit into dice is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer W on the opposite side to the circuit surface (see FIG. 2A). In addition, the dicing ring R is attached to the wafer processing tape T (see FIG. 2A). In the state where the tape T for wafer processing is attached, a groove for dividing is formed (refer to FIG. 2B). In the back grinding process, as shown in FIGS. 2C and 2D, the semiconductor wafer is ground to reduce the thickness. Specifically, the back polishing tape G is attached to the surface where the grooves are formed, and on the other hand, the wafer processing tape T attached first is peeled off (see FIG. 2C). In the state where the back polishing tape G is attached, the grinding process is performed until the semiconductor wafer W reaches a predetermined thickness (see FIG. 2D).

In the mounting process, as shown in FIGS. 3A to 3B, after the dicing ring R is mounted on the adhesive layer 2 of the dicing tape 10, a semi-cut semiconductor wafer is attached to the exposed surface of the die bonding layer 3 W (refer to Figure 3A). Then, the back polishing tape G is peeled off from the semiconductor wafer W (see FIG. 3B).

In the expansion process, as shown in FIGS. 4A to 4C, the dicing ring R is fixed to the holder H of the expansion device. The lifting member U of the expansion device is used to lift the dicing mucous film 20 from the lower side, thereby stretching the dicing mucous film 20 in a manner of expanding in the plane direction (refer to FIG. 4B). Thereby, the semi-cut semiconductor wafer W is cut under a specific temperature condition. The above-mentioned temperature conditions are, for example, -20 to 5°C, preferably -15 to 0°C, more preferably -10 to -5°C. By lowering the lifting member U, the expanded state is released (refer to FIG. 4C). Furthermore, in the expanding process, as shown in FIGS. 5A to 5B, the dicing tape 10 is stretched to expand the area under higher temperature conditions (for example, room temperature (23° C.)). As a result, the adjacent semiconductor wafers W that have been cut are moved away from each other in the direction of the film surface, thereby expanding the gap.

In the notch maintenance step, as shown in FIG. 6, hot air (for example, 100 to 130°C) is applied to the dicing tape 10 to shrink the dicing tape 10, and then cool and solidify to maintain the gap between the adjacent semiconductor wafers W that have been cut. The distance (cut).

In the pick-up process, as shown in FIG. 7, the semiconductor wafer W in the state where the die bonding layer 3 is attached is peeled off from the bonding layer 2 of the dicing tape 10. Specifically, the pin member P is raised to lift up the semiconductor wafer W to be picked up via the dicing tape 10. Use the suction jig J to hold the lifted semiconductor wafer.

In the die bonding process, the semiconductor wafer W in the state where the die bonding layer 3 is attached is bonded to the adherend. Furthermore, in the die-cut die-bonding film 20 of this embodiment, the shear loss modulus at 120°C of the die-bonding layer 3 (die-mud film) is 0.03 MPa or more and 0.09 MPa or less. Therefore, under heating conditions ( For example, at 120° C.) when the die-bonding layer 3 is bonded to the adherend, the die-bonding layer 3 can be prevented from peeling off the adherend.

The matters disclosed in this manual include the following.

(1) A sticky film whose shear loss modulus at 120°C is 0.03 MPa or more and 0.09 MPa or less.

According to the above configuration, the shear loss modulus of the die bond film at 120°C is 0.03 MPa or more. Therefore, when the semiconductor wafer with the die bond layer (die die film) is laminated under heating conditions (for example, 120°C) , Can make the above-mentioned sticky crystal layer have moderate hardness. In addition, the shear loss modulus of the above-mentioned die bond film at 120°C is 0.09 MPa or less. Therefore, it can be used for stacking semiconductor wafers with a die bond layer (die die film) under heating conditions (for example, 120°C). Makes the wettability with the adherend better. Thereby, it is possible to make the above-mentioned die bond film more difficult to peel off from the surface of the semiconductor wafer when it is laminated under heating conditions.

(2) According to the mucosal film described in (1) above, the shear loss modulus at 180°C is 0.01 MPa or more and 0.05 MPa or less.

Generally, the laminated semiconductor wafer with the die-attach layer (die-stick film) is molded (sealed) under heating conditions (for example, 180°C). According to the above configuration, the shear loss of the die-stick film at 180°C The modulus is 0.01 MPa or more, so even when the laminated semiconductor wafer with the attached die-bonding layer (die-attached film) is molded under heating conditions, the die-attached film can be made to have an appropriate hardness. In addition, the shear loss modulus of the above-mentioned die-bonding film at 180°C is below 0.05 MPa, so even when the laminated semiconductor chip with the die-bonding layer (die-stick film) is molded, it can be Good wettability of the material. Thereby, it is possible to make the above-mentioned die-attach film difficult to peel from the surface of the semiconductor wafer not only during the lamination under heating conditions, but also during the molding.

(3) The mucous film according to the above (2), wherein the ratio of the shear loss modulus of the mucous film at 180°C to the shear loss modulus of the mucous film at 120°C is 0.5 or more and 0.8 or less.

According to the above configuration, the ratio of the shear loss modulus of the die-bond film at 120°C to the shear loss modulus of the die-attach film at 180°C is 0.5 or more and 0.8 or less, so that the die-stick film can be made It is more difficult to peel from the surface of the semiconductor wafer not only during the layering under heating, but also during molding.

(4) According to the die bond film described in any one of (1) to (3) above, its shear adhesive force at 120°C to the bare wafer is 0.1 MPa or more and 0.4 MPa or less, The shear bonding force to bare wafers at 180°C is above 0.05 MPa and below 0.3 MPa.

According to the above configuration, it is possible to make the die bond film more difficult to peel from the surface of the semiconductor wafer not only at the time of lamination under heating conditions but also at the time of molding.

(5) The mucosal film according to any one of (1) to (4) above, wherein the elastic modulus measured by dynamic viscoelasticity at 900 Hz at room temperature is 1 GPa or more and less than 3 GPa.

According to the above configuration, when the semiconductor wafer laminated on the substrate with the die bond layer (die die film) interposed between the die bond layer (die die film) is transported to the mold resin molding device at room temperature (23°C), the die bond film can be made difficult. Peel off from the surface of the semiconductor wafer.

(6) The sticky film according to any one of (1) to (5) above, which has thermosetting properties, Cured at 175°C for 1 hour and exposed to an environment of 135°C and a relative humidity of 85%RH for 100 hours, the moisture absorption rate is 1% by mass or less.

According to the above configuration, even when exposed to a high-temperature and high-humidity environment (the so-called HAST (Highly Accelerated Temperature and Humidity Stress Test) environment), the die-attach film can be made more difficult to peel from the surface of the semiconductor wafer.

(7) The sticky film according to any one of (1) to (6) above, which has thermosetting properties, The tensile storage modulus at 130°C after curing at 175°C for 1 hour is 0.2 MPa or more and 1.0 MPa or less.

According to the above configuration, it is possible to make the die bond film more difficult to peel from the surface of the semiconductor wafer not only at the time of lamination under heating conditions but also at the time of molding.

(8) The sticky film according to any one of (1) to (7) above, which has thermosetting properties, After curing at 175°C for 5 hours and exposed to 100 hours in an environment of 135°C and 85%RH, the shear adhesion to bare wafers is above 15 MPa. The shear adhesion to bare wafers after curing at 175°C for 5 hours and exposure to 135°C and 85%RH for 100 hours is relative to curing at 175°C for 5 hours and at 135°C and relative humidity The ratio of shear adhesion to bare wafers before exposure in an environment of 85% RH is 0.6 or more. (9) According to the above-mentioned (8), the adhesive film, wherein after curing at 175°C for 5 hours and exposed in an environment of 135°C and a relative humidity of 85%RH, the shear adhesion to the bare wafer is less than 50 MPa , The shear adhesion to bare wafers after curing at 175°C for 5 hours and exposure to 135°C and 85%RH for 100 hours is relative to curing at 175°C for 5 hours and at 135°C and relative humidity The ratio of shear adhesion to bare wafers before exposure in an environment of 85% RH is 0.9 or less.

According to the above configuration, even when exposed to a high-temperature and high-humidity environment, the die-attach film can be made more difficult to peel from the surface of the semiconductor wafer.

(10) A diced chip adhesive film, which has: Laminating a dicing tape with an adhesive layer on the substrate layer, and The adhesive layer laminated on the adhesive layer of the above-mentioned dicing tape, The above-mentioned sticky layer is composed of any sticky film in the above (1) to (9).

According to the above configuration, it is possible to make it difficult to peel off the die-cut die-bonding film of the die-cut die-cut die film from the surface of the semiconductor wafer when it is laminated under heating conditions.

Furthermore, the die bond film and the die bond film of the present invention are not limited to the above-mentioned embodiments. In addition, the die bond film and the chip die bond film of the present invention are not limited by the above-mentioned effects. The die-bonding film and die-cutting die-bonding film of the present invention can be modified in various ways without departing from the scope of the present invention. [Example]

Next, the present invention will be described more specifically with examples. The following examples are used to illustrate the present invention in more detail, and do not limit the scope of the present invention.

[Example 1] ＜Production of crystal cut ribbon＞ The adhesive composition was applied to the silicone-treated surface of the PET-based release film (thickness 50 μm) as the release liner so that the thickness became 10 μm using an applicator. After applying the adhesive composition, the PET separator is heated and dried at 120° C. for 2 minutes to form an adhesive layer. Then, an EVA film (manufactured by Gunze Limited, 115 μm in thickness) was attached to the adhesive layer and stored at room temperature (23° C.) for 72 hours to obtain a diced tape. The above-mentioned adhesive composition is prepared in the following manner. First, in a reaction vessel equipped with a condenser, a nitrogen introduction tube, a thermometer, and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate (2EHA), 19 parts by mass of 2-hydroxyethyl acrylate (HEA), 0.4 parts by mass of benzoyl peroxide and 80 parts by mass of toluene were polymerized in a nitrogen stream at 60°C (liquid temperature) for 10 hours to obtain the first resin composition. Then, 1.2 parts by mass of 2-methacryloxyethyl isocyanate (MOI) was added to the first resin composition, and the addition reaction was performed at 50°C (liquid temperature) in the air for 60 hours to obtain the second Resin composition. Then, with respect to 100 parts by mass of the second resin composition, 1.3 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name "CORONATE L"), and a photopolymerization initiator (Ciba Specialty Chemicals Inc., brand name "Irgacure 184") 3 parts by mass to prepare an adhesive composition. ＜Production of slicing and sticking film＞ Acrylic resin (manufactured by Nagase ChemteX Corporation, brand name "SG-80H") 100 parts by mass, phenol resin (manufactured by Meiwa Chemical Co., Ltd., brand name "MEHC-7851") 15 parts by mass, silica filler (ADMATECHS CO ., LTD., brand name "SO-25R") 22 parts by mass, and 0.5 parts by mass silane coupling agent (manufactured by Shin-Etsu Silicones, brand name "KBM403"), dissolved so that the solid content concentration becomes 20% by mass Using methyl ethyl ketone to obtain the first crystal bonding composition. Then, use an applicator to apply the first die-bonding composition to the silicone-treated surface of a PET-based release liner (thickness 50 μm) so that the thickness becomes 10 μm. Drying was performed at ℃ for 2 minutes, thereby obtaining a die-bonding wafer with a die-bonding layer (die-die film) laminated on the release liner. Then, using a hand roller, one side of the non-laminated release sheet of the bonded wafer was attached to the adhesive layer of the dicing tape to obtain the dicing chip adhesive film of Example 1.

(Measurement of Shear Loss Modulus at 120℃ and 180℃) The shear loss modulus at 120°C and 180°C was measured for the die bond layer (die die film) of the diced die bond film of Example 1. The shear loss modulus at 120℃ is obtained by the following method: measuring a circular surface of the mucosal film punched into a cylindrical shape of Φ7.5 mm×1 mm and applying a shear with a frequency of 1 Hz at a temperature of 120℃ During vibration, the shear vibration transmitted to the other circular surface is analyzed and obtained. The measurement of the shear vibration and the analysis of the measurement value were performed using a viscoelasticity measuring device (manufactured by Rheometric Scientific, model ARES). In addition, the shear loss modulus at 180°C was measured in the same manner as described above, except that the temperature was set to 180°C. The measurement results of the shear loss modulus at 120°C and 180°C are shown in Table 1 below. Furthermore, for the shear loss modulus at 120°C and 180°C, the die-cut die-bonding layer (mucota) of the slicing die-cut die film of Example 2, Comparative Example 1, and Comparative Example 2 described later can also be tested. Determination. The results are also shown in Table 1.

(Measurement of Shear Adhesion at 120℃ and 180℃) Before curing the thermosetting resin (acrylic resin and phenol resin) of the die-bonding layer (die-stick film) of the die-cut die-bonding film of Example 1, the shear adhesion force of the die-cut film at 120°C and 180°C was performed Determination. The shear bonding force at 120°C is measured as follows: the adhesive film is attached to a bare chip with a thickness of 0.5 mm and 3 mm×3 mm at a temperature of 120°C, a speed of 10 mm/s, and a pressure of 0.15 MPa. The obtained substance was used as a test piece, and a shear tester (manufactured by Dage Corporation, Dage4000) was used to measure the test piece under the conditions of a measurement speed of 500 μm/s, a measurement gap of 100 μm, and a table temperature of 120°C. In addition, the above-mentioned measurement was performed after placing the above-mentioned test piece on the measurement table for 20 seconds. Regarding the shear adhesive force at 180°C, except that the table temperature was set to 180°C, it was measured in the same manner as described above. The measurement results of the shear adhesion at 120°C and 180°C are shown in Table 1 below. Furthermore, the adhesive layer (mucosal film) of the diced die-cut die-cut film of Example 2, Comparative Example 1, and Comparative Example 2 described later was also measured for shear adhesion at 120°C and 180°C. The results are also shown in Table 1.

(Measurement of shear adhesion after exposure to high temperature and high humidity environment) The sticky layer (sticky film) of the diced sticky film of Example 1 was cured at 175°C for 5 hours, in a high temperature and high humidity (135°C, relative humidity 85%RH) environment (the so-called HAST environment) After 100 hours of exposure, the shear adhesion of the adhesive layer was measured. For this measurement, the adhesive film was attached to a bare chip with a thickness of 0.5 mm and 3 mm×3 mm under the conditions of a temperature of 120°C, a speed of 10 mm/s, and a pressure of 0.15 MPa, and then the adhesive film was placed at 175°C Cure for 5 hours and expose for 100 hours in an environment of 135°C and 85% RH. The obtained material is used as a test piece, and a shear tester (manufactured by Dage Corporation, Dage4000) is used for the test piece. The measurement speed is 500 μm/ s. Measure under the conditions of a measuring gap of 100 μm and a table temperature of 23°C. In addition, the above-mentioned measurement was performed after placing the above-mentioned test piece on the measurement table for 20 seconds. In addition, for the mucosal film attached to the bare wafer and cured at 175°C for 5 hours, the shear adhesive force was measured in the same manner as above before being exposed to an environment of 135°C and a relative humidity of 85%RH. The results obtained by measuring the shear adhesion after exposure in an environment of 135°C and 85%RH, and the results obtained by measuring the shear adhesion before exposure in an environment of 135°C and 85%RH In Table 1 below. Furthermore, the adhesion layer (mucosal film) of the dicing die-cutting film of Example 2, Comparative Example 1, and Comparative Example 2 described later was also measured after being exposed in an environment of 135°C and a relative humidity of 85%RH. Shear bonding strength, and shear bonding strength before exposure in an environment of 135°C and a relative humidity of 85%RH. The results are also shown in Table 1.

(Measurement of moisture absorption rate after exposure to high temperature and high humidity environment) The mucous film of the crystal-cut mucous film of Example 1 was cured at 175°C for 1 hour, and then exposed for 100 hours in an environment of high temperature and high humidity (135°C, relative humidity 85%RH), and then the mucous film was measured The moisture absorption rate. The moisture absorption rate is determined by curing at 175°C for 1 hour and curing at 135°C and relative humidity 85%RH before exposure and curing at 175°C for 1 hour and 135°C and relative humidity 85%RH Calculate the mass change after 100 hours of exposure in the environment. The measurement results of the moisture absorption rate are shown in Table 1 below. Furthermore, the moisture absorption rate was also measured for the die-cut die-bonding layer (die-mud film) of Example 2, Comparative Example 1, and Comparative Example 2 described later. The results are also shown in Table 1.

(Determination of tensile storage modulus at 130℃) After curing the mucous film of the dicing mucous film of Example 1 at 175°C for 1 hour, the tensile storage modulus of the mucous film at 130°C was measured. The tensile storage modulus at 130°C after curing at 175°C for 1 hour is measured using a solid viscoelasticity measuring device (for example, model RSAIII, manufactured by Rheometric Scientific Co., Ltd.). Specifically, a test piece with a length of 40 mm (measurement length) and a width of 10 mm was cut out from the mucosal film cured at 175°C for 1 hour, and a solid viscoelasticity measuring device (for example, model RSAIII, Rheometric Scientific Co., Ltd.) was used. Manufactured by the company), the tensile storage modulus of the above test piece was measured under the conditions of a frequency of 1 Hz, a heating rate of 10°C/min, and a distance between chucks of 22.5 mm at a temperature range of -30 to 280°C. At this time, it is determined by reading the value at 130°C. Furthermore, the tensile storage modulus at 130° C. was also measured for the die-cut die-bonding layer (muco-mux film) of the dicing die-cut die-bonding film of Example 2, Comparative Example 1, and Comparative Example 2 described later. The results are also shown in Table 1.

(Measurement of elastic modulus at room temperature and 900 Hz) Before curing the mucous film of the diced mucous film of Example 1, the elastic modulus of the mucous film was measured at room temperature (23° C.) and 900 Hz by dynamic viscoelasticity measurement. The elastic modulus before curing obtained by dynamic viscoelasticity measurement at room temperature and 900 Hz is obtained as follows: using a dynamic viscoelastic device (manufactured by Rheogel, Rheogel-4000), in an automatic load mode at the heating rate Measure the mucosal film before curing at -50℃～100℃ under the condition of 5℃/min. Furthermore, the die-cut die-bonding layer (muco-mucosal film) of Example 2, Comparative Example 1, and Comparative Example 2 described later was measured by dynamic viscoelasticity at room temperature and 900 Hz. Measure the obtained modulus of elasticity. The results are also shown in Table 1.

The diced die attach film of Example 1 obtained as described above was evaluated for peeling from the adherend (bare wafer) in the following manner.

(Evaluation of peeling from adherend) ・Evaluation of peeling during die bonding A 12-inch bare wafer (300 mm in diameter and 50 μm in thickness) and a dicing ring were attached to the dicing die attach film of Example 1. Then, using the chip separation device DDS230 (manufactured by DISCO Inc.), the bare wafer and the die bond layer (die die film) were cut to obtain a plurality of bare chips with the die die layer (die die film) attached. A bare chip with an adhesive die layer is laminated and bonded on the lead frame substrate in a stepped form. As a bare wafer, a warped wafer is used.

The warped wafer is produced in the following manner. First, the following (a) to (e) were dissolved in methyl ethyl ketone to obtain a warpage adjusting composition having a solid content concentration of 20% by mass. (a) Acrylic resin (manufactured by Nagase ChemteX Corporation, trade name "SG-70L"): 100 parts by mass (b) Epoxy resin (manufactured by DIC Co., Ltd., trade name "HP-4700"): 90 parts by mass (c) Phenolic resin (manufactured by Minghe Chemical Co., Ltd., trade name "H-4"): 102 parts by mass (d) Spherical silicon dioxide (manufactured by ADMATECHS CO., LTD., trade name "SO-25R"): 220 parts by mass (e) Curing catalyst (manufactured by Shikoku Chemical Co., Ltd., trade name "2PHZ"): 0.6 parts by mass Then, use an applicator to apply the warpage adjustment composition to the silicone-treated surface of a PET release liner (thickness 50 μm) with a thickness of 25 μm, at 150°C for 2 minutes After drying, a warpage adjustment sheet in which a warpage adjustment layer was laminated on the release liner was obtained. Then, using a laminator (manufactured by MCK Co., Ltd., model MRK-600), the bare wafer was attached to the unlaminated portion of the warpage adjustment sheet under the conditions of 60°C, 0.3 MPa, and 10 mm/s. One side of the gasket is put into an oven and heated at 175°C for 1 hour to thermally cure the thermosetting resin in the warpage adjustment layer, whereby the warpage adjustment layer shrinks, thereby obtaining a warped Bare wafer. After shrinking the warpage adjustment layer, a wafer processing tape (manufactured by Nitto Denko Co., Ltd., trade name "V-12SR2") is attached to one of the unlaminated warpage adjustment layers of the warped bare wafer Then, the warped bare wafer is fixed to the dicing ring via the above-mentioned wafer processing tape. Then, the warpage adjustment layer is removed from the warped bare wafer. Using a dicing device (manufactured by DISCO, model 6361), one side of the warped bare wafer from which the warpage adjustment layer was removed (hereinafter referred to as one side) was half-cut with a size of 10 mm×10 mm. Then, a back polishing tape is attached to one side of the warped bare wafer, and the wafer processing tape is removed from the other side of the warped bare wafer (the side opposite to the one side). Then, using a backside grinder (manufactured by DISCO, model DGP8760), the warped bare wafer was ground from the other side so that the thickness of the warped bare wafer was 50 μm (0.05 mm), and the resulting crystal The circle serves as a warped wafer.

The evaluation of peeling at the time of crystal bonding is carried out in detail as follows. First, use the cold expansion unit to cut the bare wafer and the die bond layer (die die film) under the conditions of an expansion temperature of -15°C, an expansion speed of 200 mm/s, and an expansion amount of 12 mm, to obtain multiple attached wafers Layer (sticky film) of the bare chip. Then, expand at room temperature (23°C), expansion speed 1 mm/s, and expansion amount 10 mm. Then, while maintaining the expanded state, under the conditions of a heating temperature of 220°C, an air volume of 40L/min, a heating distance of 20 mm, and a rotation speed of 3°/s, the diced wafers at the boundary part of the outer edge of the bare wafer are adhered The crystal film heat-shrinks to maintain the cuts of the plurality of bare chips attached with the crystal layer. Then, pick up the plurality of bare wafers with adhesive layers, and use a die bonder (manufactured by Shinkawa Co., Ltd., trade name "Die Bonder SPA-300") to pick up the bare wafers with multiple adhesive layers. The chip is bonded on the lead frame substrate in a stepwise manner under the conditions of a table temperature of 120°C, a die-bonding load of 0.2 MPa, and a die-bonding time of 2 seconds. For the 7-level continuous bonding, it is performed by bonding the bare chips of each adhesive crystal layer along the same direction in a stepwise manner that is staggered by 200 μm. For the evaluation of the peeling state during die bonding, the bare die with the die attached layer is laminated in a stepwise manner, and the laminated state of the bare die is taken from the side orthogonal to the laminating direction and binarized immediately under a microscope. To evaluate the peeling state of the die bond layer from the bare chip. Regarding the peeling state of the die-bonding layer, the level without practical problems is recorded as ○, and the level with practical problems is recorded as × for evaluation. The results are shown in Table 1.

・Evaluation of peeling at room temperature (23℃) For the evaluation of peeling at room temperature (23°C), place the bare wafer with a stepped die attach layer (die film) at room temperature (23°C), and observe the direction of self and stacking with a microscope. The stacked state of the bare chip was photographed on the other side and binarized to evaluate the peeling state of the die bond layer (die die film) from the bare chip. The results are shown in Table 1.

・Evaluation of peeling during molding Using a molding resin molding device, the bare chip laminated on the lead frame substrate was molded at a temperature of 180°C, and the molded part was removed. Observed by a microscope, it was observed from one of the directions orthogonal to the laminated direction. The layered state of the bare chip is photographed from the side and binarized to evaluate the peeling state of the die bond layer (die bond film) from the bare die. The results are shown in Table 1.

・Evaluation of peeling under high temperature and high humidity After molding with a molding resin molding device at a temperature of 180°C to cover the bare chip laminated on the lead frame substrate, the molded part is removed, and then, in an environment of 135°C and a relative humidity of 85%RH After the exposure, the laminated state of the bare chip was photographed from the side orthogonal to the laminated direction with a microscope and binarized to evaluate the peeling state of the die bond layer (die die film) from the bare chip. The results are shown in Table 1. In addition, for Example 2, Comparative Example 1, and Comparative Example 2 described later, in the same manner as in Example 1, the evaluation of peeling during die bonding, the peeling evaluation at room temperature, the peeling evaluation during molding, and the high temperature were also performed. Medium peel evaluation under high humidity. The results are also shown in Table 1.

[Example 2] ＜Production of crystal cut ribbon＞ In the same manner as in Example 1, a dicing tape was produced. ＜Production of slicing and sticking film＞ Acrylic resin (manufactured by Nagase ChemteX Corporation, brand name "SG-P3") 100 parts by mass, phenol resin (manufactured by Meiwa Chemical Co., Ltd., brand name "MEHC-7851") 45 parts by mass, silica filler (ADMATECHS CO ., LTD., brand name "SO-25R") 47 parts by mass, and silane coupling agent (manufactured by Shin-Etsu Silicones, brand name "KBM403") 0.5 parts by mass dissolved so that the solid content concentration becomes 20% by mass Using methyl ethyl ketone to obtain the second crystal bonding composition. Then, use an applicator to apply the second die-bonding composition to the silicone-treated surface of a PET release liner (thickness 50 μm) so that the thickness becomes 10 μm. Drying was carried out for 2 minutes at °C, thereby obtaining a bonding wafer with a bonding die layer laminated on the release liner. Then, using a hand roller, one side of the unlaminated release sheet of the bonding wafer was attached to the adhesive layer of the dicing tape to obtain the dicing chip adhesive film of Example 2. ＜Layer of bare chip with adhesive crystal layer＞ In the same manner as in Example 1, the bare chip with the die-bonding layer (die-die film) was continuously bonded in a stepwise manner on the lead frame substrate.

[Comparative Example 1] ＜Production of crystal cut ribbon＞ In the same manner as in Example 1, a dicing tape was produced. ＜Production of slicing and sticking film＞ 100 parts by mass of acrylic resin (manufactured by Nagase ChemteX Corporation, brand name "SG-790"), 100 parts by mass of phenol resin (manufactured by Meiwa Chemical Co., Ltd., brand name "MEHC-7500"), and silica slurry ( Nissan Chemical Co., Ltd., brand name "MEK-ST40") 140 parts by mass (in terms of solid content) was dissolved in methyl ethyl ketone so that the solid content concentration became 20% by mass to obtain a third crystal bonding composition. Then, use an applicator to apply the third die-bonding composition to the silicone-treated surface of a PET release liner (thickness 50 μm) so that the thickness becomes 10 μm. Drying is carried out at ℃ for 2 minutes, thereby obtaining a bonded wafer with a die-bonding layer laminated on the release liner. Then, using a hand roller, one side of the unlaminated release sheet of the bonded wafer was attached to the adhesive layer of the dicing tape to obtain the diced chip adhesive film of Comparative Example 1. ＜Layer of bare chip with adhesive crystal layer＞ In the same manner as in Example 1, the bare chip with the die-bonding layer (die-die film) was continuously bonded in a stepwise manner on the lead frame substrate.

[Comparative Example 2] ＜Production of crystal cut ribbon＞ In the same manner as in Example 1, a dicing tape was produced. ＜Production of slicing and sticking film＞ 100 parts by mass of acrylic resin (manufactured by Nagase ChemteX Corporation, trade name "SG-790"), 10 parts by mass of phenol resin (manufactured by Meiwa Chemical Co., Ltd., trade name "MEHC-7500"), and silicon dioxide slurry ( Nissan Chemical Co., Ltd. product, brand name "MEK-ST40") 123 parts by mass (in terms of solid content) was dissolved in methyl ethyl ketone so that the solid content concentration became 20% by mass to obtain a fourth crystal-bonded composition. Then, use an applicator to apply the fourth die-bonding composition to the silicone-treated surface of a PET release liner (thickness 50 μm) so that the thickness becomes 10 μm. Drying was performed at ℃ for 2 minutes, thereby obtaining a bonding wafer in which a die-bonding layer was laminated on the release liner. Then, using a hand roller, one side of the non-laminated release sheet of the bonding wafer was attached to the adhesive layer of the dicing tape to obtain the dicing die bonding film of Comparative Example 2. ＜Layer of bare chip with adhesive crystal layer＞ In the same manner as in Example 1, the bare chip with the die-bonding layer (die-die film) was continuously bonded in a stepwise manner on the lead frame substrate.

[Table 1] Example 1 Example 2 Comparative example 1 Comparative example 2 Shear loss modulus at 120℃[MPa] 0.033 0.085 0.022 0.11 Shear loss modulus at 180℃[MPa] 0.021 0.047 0.007 0.054 Shear loss modulus ratio (180℃/120℃) 0.64 0.55 0.32 0.49 Shear bonding strength at 120℃[MPa] 0.31 0.12 0.043 0.091 180℃ shear adhesion force [MPa] 0.25 0.07 0.028 0.047 Shear bonding strength after 135℃, 85%RH [MPa] twenty two twenty three 14 11 Shear bonding strength before 135℃, 85%RH [MPa] 25 27 25 20 Shear adhesion ratio (135℃, after 85%RH/135℃, before 85%RH) 0.88 0.85 0.56 0.55 Moisture absorption rate [mass%] 0.5 0.3 1.1 1.1 130℃ tensile storage modulus [MPa] 0.2 0.9 2.8 8.5 Room temperature, 900 Hz modulus of elasticity [GPa] 1.1 2.6 3.3 3.8 Evaluation of peeling during die bonding 〇 〇 X X Room temperature peeling evaluation 〇 〇 X X Evaluation of peeling during molding 〇 〇 X X Evaluation of peeling under high temperature and high humidity environment 〇 〇 X X

In Examples 1 and 2, the shear loss modulus of the die-bonding film at 120°C is in the range of 0.03 MPa or more and 0.09 MPa or less, and the peeling evaluation during die-bonding is all zero. It can be seen that, in Examples 1 and 2, the die-attach film peeled off at the time of die-attaching only at a level that is not problematic in practice. In addition, in Examples 1 and 2, the value of the shear loss modulus of the die bond film at 180° C. was in the range of 0.01 MPa or more and 0.05 MPa or less, and the peeling evaluation during molding was all zero. It can be seen that in Examples 1 and 2, the die attach film was peeled only at a level that was not problematic in practical use during molding. Furthermore, in Examples 1 and 2, the value of the elastic modulus obtained by dynamic viscoelasticity measurement at room temperature and 900 Hz was in the range of 1 GPa or more and less than 3 GPa, and the room temperature peeling evaluation was both. . It can be seen that in Examples 1 and 2, the die attach film peeled off at room temperature only at a level that is not problematic in practice. In addition, in Examples 1 and 2, the shear adhesion value after exposure in an environment of 135°C and a relative humidity of 85% is all 15 MPa or more, and furthermore, the value of the shear adhesive force after exposure to an environment of 135°C and a relative humidity of 85% is 100%. The ratio of the shear adhesive force after hours to the shear adhesive force before exposure in an environment of 135°C and a relative humidity of 85% is all 0.6 or more, and the peeling evaluation in a high temperature and high humidity environment is all zero. It can be seen that in Examples 1 and 2, the die attach film peeled off only at a level that is practically no problem in a high temperature and high humidity environment. In contrast, in Comparative Examples 1 and 2, the shear loss modulus of the die-bonding film at 120°C is not within the range of 0.03 MPa or more and 0.09 MPa or less, and the shear loss modulus of the die-bonding film at 180°C The value of the quantity is not in the range of 0.01 MPa or more and 0.05 MPa or less. In addition, in Comparative Examples 1 and 2, the value of the elastic modulus measured by dynamic viscoelasticity at room temperature and 900 Hz is not in the range of 1 GPa or more and less than 3 GPa. Furthermore, in Comparative Examples 1 and 2, the shear adhesion value after exposure in an environment at 135°C and a relative humidity of 85% did not reach 15 MPa, and furthermore, the value of shear adhesion after exposure to an environment at 135°C and a relative humidity of 85% was 100%. The ratio of the shear bonding force after hours to the shear bonding force before exposure in an environment of 135°C and relative humidity of 85% did not reach 0.6. In Comparative Examples 1 and 2, the peeling evaluation during die bonding, the peeling evaluation at room temperature, the peeling evaluation during molding, and the peeling evaluation under a high-temperature and high-humidity environment are all ×. That is, in Comparative Examples 1 and 2, the die attach film peeled off at a level that is a problem in practical use.

[Cross Reference of Related Applications] This application claims the priority of Japanese Patent Application No. 2019-128946, and is incorporated into the description of this application specification by reference.

1: Substrate layer 2: Adhesive layer 3: Sticky crystal layer 10: Cut crystal belt 20: slicing and sticking film G: Back grinding tape H: Holder J: Adsorption fixture P: Pin member R: Cutting ring T: Tape for wafer processing U: Jack up member W: semiconductor wafer

FIG. 1 is a cross-sectional view showing the structure of a dicing die bond film according to an embodiment of the present invention. 2A is a cross-sectional view schematically showing the half-cutting process in the method of manufacturing a semiconductor integrated circuit. 2B is a cross-sectional view schematically showing the state of the half-cutting process in the manufacturing method of the semiconductor integrated circuit. 2C is a cross-sectional view schematically showing the state of the back grinding process in the manufacturing method of the semiconductor integrated circuit. 2D is a cross-sectional view schematically showing the state of the back grinding process in the manufacturing method of the semiconductor integrated circuit. 3A is a cross-sectional view schematically showing the state of the mounting process in the manufacturing method of the semiconductor integrated circuit. 3B is a cross-sectional view schematically showing the state of the mounting process in the manufacturing method of the semiconductor integrated circuit. 4A is a cross-sectional view schematically showing the state of the expansion process at a low temperature in the manufacturing method of the semiconductor integrated circuit. 4B is a cross-sectional view schematically showing the state of the expansion process at a low temperature in the manufacturing method of the semiconductor integrated circuit. 4C is a cross-sectional view schematically showing the state of the expansion process at a low temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 5A is a cross-sectional view schematically showing an expansion process at room temperature in the method of manufacturing a semiconductor integrated circuit. FIG. 5B is a cross-sectional view schematically showing the state of the expansion process at room temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 6 is a cross-sectional view schematically showing the state of the cut maintenance process in the method of manufacturing a semiconductor integrated circuit. FIG. 7 is a cross-sectional view schematically showing the state of the pickup process in the manufacturing method of the semiconductor integrated circuit.

1: Substrate layer

2: Adhesive layer

3: Sticky crystal layer

10: Cut crystal belt

20: slicing and sticking film

Claims (9)

A sticky film whose shear loss modulus at 120°C is 0.03 MPa or more and 0.09 MPa or less. Such as the sticky film of claim 1, its shear loss modulus at 180°C is 0.01 MPa or more and 0.05 MPa or less. The die bond film of claim 2, wherein the ratio of the shear loss modulus at 180°C to the shear loss modulus at 120°C is 0.5 or more and 0.8 or less. Such as the adhesive film of claim 1 or 2, wherein the shear adhesive force at 120°C to the bare wafer is 0.1 MPa or more and 0.4 MPa or less, The shear bonding force to bare wafers at 180°C is above 0.05 MPa and below 0.3 MPa. Such as the mucosal film of claim 1 or 2, wherein the elastic modulus measured by dynamic viscoelasticity at room temperature and 900 Hz is 1 GPa or more and less than 3 GPa. For example, the adhesive film of claim 1 or 2, which has thermosetting properties, The moisture absorption rate after curing for 1 hour at 175°C and exposure to an environment of 135°C and a relative humidity of 85%RH for 100 hours is 1% by mass or less. For example, the adhesive film of claim 1 or 2, which has thermosetting properties, The tensile storage modulus at 130°C after curing at 175°C for 1 hour is 0.2 MPa or more and 1.0 MPa or less. For example, the adhesive film of claim 1 or 2, which has thermosetting properties, After curing at 175°C for 5 hours and exposed to 100 hours in an environment of 135°C and a relative humidity of 85%RH, the shear adhesion to bare wafers is above 15 MPa. The shear adhesion to bare wafers after curing at 175°C for 5 hours and exposed to 100 hours in an environment of 135°C and 85%RH is relative to curing at 175°C for 5 hours and at 135°C and relative humidity. The ratio of shear adhesion to bare wafers before exposure in an environment with a humidity of 85% RH is 0.6 or more. A diced chip adhesive film, which has: Laminating a dicing tape with an adhesive layer on the substrate layer; and The adhesive layer laminated on the adhesive layer of the above-mentioned dicing tape; The above-mentioned die sticking layer is composed of the die sticking film of any one of claims 1 to 8.

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