JP2016082165A - Dicing film, and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing film which allows a wafer to be held adequately when dicing the wafer, and which is easy to detach a semiconductor chip when picking up the semiconductor chip, and hard to leave an adhesive stuck to the backside of the semiconductor wafer and a through-electrode after the pickup.SOLUTION: A dicing film satisfies the following requirements: (1) in the case of stretching a sample piece of 25 mm in width and 150 mm in length by a tensile strength tester under the condition of an inter-chuck distance of 100 mm and a tensile speed of 10 mm/minute, a stress when the sample piece is stretched by 1% is 300 g/25 mm or less; and (2) a surface statical friction coefficient measured according to JIS K7125 is 0.1-2.0.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dicing film and a method for manufacturing a semiconductor device. Dicing film is useful as an adhesive sheet for fixed support that is attached to the front or back surface of a wafer in the process of cutting and dividing semiconductor wafers and light-emitting diodes (LEDs) into element pieces (chips) and automatically collecting the elements using a pickup method. It is.

  In a conventional method for manufacturing a semiconductor device used in an electronic / electrical device, a semiconductor chip installed on a substrate is conductively connected by wire bonding. In recent years, there has been a demand for further downsizing, thinning, and weight reduction of equipment, and similar demands have been made for electronic components such as semiconductor devices used in equipment. As one of the efforts for downsizing and high-density mounting of electronic components, for example, a three-dimensional mounting technique for realizing high-density mounting by stacking semiconductor chips has been proposed (for example, see Patent Document 1). Further, as a technology that responds to these efforts, for example, a semiconductor package structure in which a through electrode is formed inside a semiconductor chip and stacked on a mounting chip called an interposer has been proposed (see, for example, Patent Document 2).

As a dicing tape used for manufacturing a semiconductor chip having a through electrode, the thickness of the pressure-sensitive adhesive layer is set within a certain range, the gel fraction of the pressure-sensitive adhesive layer is set within a certain range, and at the same time, the storage elastic modulus is set above a certain level. Such a dicing tape is known (see, for example, Patent Document 3).
In addition, the dicing tape described in Patent Document 3 is configured to include a gas generating agent that generates gas by stimulation in the pressure-sensitive adhesive layer, thereby providing stimulation during peeling and peeling without damaging the through electrode. Has been.

  In addition, there is known a dicing tape in which the adhesive force to a semiconductor wafer having protrusions uniformly provided on the surface is within a certain range (see, for example, Patent Document 4).

JP 2002-50738 A JP 2005-236245 A JP 2006-202926 A Japanese Patent No. 5379459

When a pressure sensitive adhesive tape is used in a pick-up process for picking up a semiconductor chip after a dicing process for cutting and separating (dicing) a semiconductor wafer on which a through electrode is formed as in Patent Document 2, the dicing process Sometimes the backside of the wafer and the electrodes on the backside of the wafer must be sufficiently retained.
However, a semiconductor wafer provided with a through electrode usually has a protruding portion in which the through electrode protrudes to a height of about 10 to 15 μm on one or both surfaces. For this reason, even if a conventional dicing tape for processing a semiconductor wafer without through electrodes is applied, the protrusion cannot be sufficiently followed and sufficient holding power cannot be obtained. On the other hand, since the pick-up process requires the ability to easily peel the semiconductor chip from the adhesive tape, simply increasing the adhesive force of the adhesive layer of the dicing tape and increasing the holding force cannot meet this requirement. Moreover, since it may cause a contact failure at the time of stacking the separated chips, it is required that the adhesive does not adhere to the wafer back surface of the semiconductor chip and the electrodes on the back surface of the semiconductor chip after the pick-up process.

  Furthermore, when a conventional dicing tape is applied to a semiconductor wafer provided with a through electrode, the pressure-sensitive adhesive layer cannot sufficiently follow the protruding portion, and a “space” is created between the pressure-sensitive adhesive layer and the through-electrode. May end up. Usually, in the dicing process, cutting water is supplied for the purpose of cooling the processing point and cleaning the semiconductor surface. If the above-mentioned space exists, the cutting water enters the space and mechanically or electrically penetrates the through electrode. May be damaged.

In the dicing tape described in Patent Document 3, the gel fraction and the storage elastic modulus are specified within a specific range. However, with these specifications, it is possible to correctly evaluate the protruding semiconductor wafer holding force in the actual dicing process. Is hard to say.
Further, in Patent Document 3, since a special gas generating agent is contained, the cost becomes high, and in the pickup process, a step of generating gas by giving a stimulus, which is not normally performed, is required, and the procedure becomes complicated. .

  In the dicing tape described in Patent Document 4, the pressure-sensitive adhesive layer is made to follow the uniformly arranged protrusions to increase the pressure-sensitive adhesive force to the wafer. However, the pressure-sensitive adhesive force is lowered on the smooth surface of the wafer. Here, in the dicing process, since the blade cuts into the dicing street which has no projection and is a smooth surface, the adhesive force on the smooth surface may be low, so that intrusion of cutting water may occur and a sufficient effect may not be obtained. is there.

  In addition, in the dicing tape as described in Patent Documents 1 to 4, when a thin wafer is diced, when the dicing tape is expanded and the chip is picked up, excessive stress is applied to the chip and the chip is deformed. There is a risk of damage. Further, when a soft dicing tape is used to suppress deformation / breakage of the chip, blocking tends to occur between the tapes.

  One aspect of the present invention has been made in view of the above problems, and in a pickup process for picking up a semiconductor chip after dicing, the semiconductor chip can be easily peeled while suppressing deformation and breakage of the semiconductor chip, and An object of the present invention is to provide a dicing film in which blocking between films is suppressed and a method for manufacturing a semiconductor device using the dicing film.

  Furthermore, another embodiment of the present invention is used when manufacturing a semiconductor device, so that the wafer can be sufficiently held in the dicing process, and the adhesive does not easily adhere to the back surface and the through electrode of the semiconductor chip after the pickup process. It is an object to provide a film and a method for manufacturing a semiconductor device using the dicing film.

Means for solving the above problems are as follows.
<1> A sample piece having a width of 25 mm and a length of 150 mm is used, and when the sample piece is pulled by a tensile tester under the conditions of a distance between chucks of 100 mm and a tensile speed of 10 mm / min, the stress at 1% elongation is 300 g / 25 mm or less. And (2) a dicing film satisfying that the coefficient of static friction of the surface measured by JIS K7125 is 0.1 to 2.0.

<2> density comprises a low density polyethylene which is ^{900kg / m 3 ~930kg / m 3} , and A layer thickness of 40Myuemu～150myuemu, density of 800kg / ^{m 3} ~890kg / ^m 3 olefin copolymerization A layer B including a coalescence and having a thickness of 20 μm to 100 μm and a layer C that is at least one pressure-sensitive adhesive selected from the group consisting of a radiation-curable pressure-sensitive adhesive and a thermosetting pressure-sensitive adhesive are laminated in this order. The dicing film according to <1>.

  <3> The dicing film according to <2>, wherein the thickness of the B layer is ½ or less of the total thickness of the dicing film.

  <4> The dicing film according to <2>, wherein the A layer contains 1% by mass or less of a lubricant component.

  <5> Furthermore, the layer containing the lubricant component is laminated on the A layer on the side opposite to the surface on which the B layer is provided, and any one of <2> to <4> The dicing film as described in 2.

  <6> The dicing film according to any one of <1> to <5>, wherein the total thickness is more than 60 μm and not more than 300 μm.

  <7> A step of bonding the dicing film according to any one of <1> to <6> to a semiconductor wafer including a through electrode, a step of dicing the semiconductor wafer to obtain a semiconductor chip, and the dicing Expanding the film and picking up the semiconductor chip. A method for manufacturing a semiconductor device.

  <8> In the bonding step, the dicing film according to any one of <2> to <5> is bonded to the semiconductor wafer so that the semiconductor wafer and the C layer are in contact with each other. <7 A method for manufacturing a semiconductor device according to the>.

  <9> The method for manufacturing a semiconductor device according to <8>, wherein the total thickness is more than 60 μm and 300 μm or less.

  According to one aspect of the present invention, in a pickup process for picking up a semiconductor chip after dicing, the semiconductor chip can be easily peeled while suppressing deformation and breakage of the semiconductor chip, and blocking between films is suppressed. A dicing film and a semiconductor device manufacturing method using the dicing film can be provided.

  According to another aspect of the present invention, the dicing can be used when manufacturing a semiconductor device, so that the wafer can be sufficiently held in the dicing process, and the adhesive does not easily adhere to the back surface and the through electrode of the semiconductor chip after the picking process. A film and a method for manufacturing a semiconductor device using the dicing film can be provided.

It is sectional drawing which shows typically the dicing film which concerns on this embodiment. It is sectional drawing which shows typically the dicing film which concerns on this embodiment provided with a lubricant layer. It is a figure explaining the manufacturing method of the semiconductor device concerning this embodiment.

  In the present specification, a numerical range represented by using “to” means a range including numerical values described before and after “to” as a lower limit value and an upper limit value.

  Hereinafter, an embodiment of the present invention will be described. A dicing film according to an embodiment of the present invention is a sample piece having a width of 25 mm and a length of 150 mm, and 1% when the sample piece is pulled by a tensile tester at a distance between chucks of 100 mm and a pulling speed of 10 mm / min. The stress at the time of elongation is 300 g / 25 mm or less, and (2) the surface static friction coefficient measured according to JIS K7125 is 0.1 to 2.0.

  When the dicing film satisfies the above (1), the dicing film can be expanded with low stress in the pickup process of picking up the semiconductor chip after dicing. Therefore, an excessive stress is suppressed from being applied to the semiconductor chip in the pickup process, and even a thin semiconductor chip having low rigidity is prevented from being deformed or damaged.

  Moreover, when a dicing film satisfy | fills said (2), blocking of films is suppressed. Further, since the sliding with the extension table and the push-up device is good in the pick-up process, the semiconductor chip can be easily peeled while suppressing deformation and breakage of the semiconductor chip, and the occurrence of blocking between the films can also be suppressed.

In the dicing film, the stress at 1% elongation at a width of 25 mm may be 300 g / 25 mm or less, preferably 280 g / 25 mm or less, and more preferably 260 g / 25 mm or less. Thereby, when picking up the semiconductor chip after dicing from a dicing tape, it is possible to prevent the semiconductor chip from being damaged without applying excessive stress to the semiconductor chip.
What is necessary is just to measure the stress at the time of 1% expansion | extension in width 25mm with the following method. That is,
i) The dicing film is cut to prepare a strip-shaped sample piece having a width (TD direction) of 25 mm and a length (MD direction) of 150 mm.
ii) Next, a sample piece is pulled by a tensile tester under the conditions of a distance between chucks of 100 mm and a tensile speed of 10 mm / min, and the stress at the time when the elongation is 1 mm is measured. The measurement is performed under conditions of a temperature of 23 ° C. and a relative humidity of 55%.
In this embodiment, the total thickness is not particularly limited as long as the stress at 1% elongation is in the above range, but in order to measure the stress at 1% elongation by the above test, it is more than 60 μm and not more than 300 μm. Preferably, it is 80 micrometers-250 micrometers.

  Further, in the dicing film, the stress at 1% elongation at a width of 25 mm is preferably 100 g / 25 mm or more, more preferably 150 g / 25 mm or more, and further preferably 180 g / 25 mm or more. As a result, when picking up the semiconductor chip after dicing from the dicing tape, it is easy to continuously apply the stress to the dicing tape so that peeling of the dicing tape from the semiconductor chip can proceed. Better.

  In the dicing film, the surface static friction coefficient may be 0.1 to 2.0, but is preferably 0.1 to 1.0. Thereby, the dicing film surface does not become sticky, and blocking property becomes favorable.

Next, the dicing film according to the present embodiment will be described in more detail with reference to FIG. FIG. 1 is a cross-sectional view schematically showing a dicing film 10 according to this embodiment. Dicing film 10 according to an embodiment of the present invention includes a low density polyethylene density is ^{900kg / m 3 ~930kg / m 3} , an A layer 12 a thickness of 40Myuemu～150myuemu, density 800 kg / ^{m 3} At least one pressure-sensitive adhesive selected from the group consisting of a B layer 13 having a thickness of 20 μm to 100 μm, a radiation-curing pressure-sensitive adhesive, and a thermosetting pressure-sensitive adhesive, containing an olefin copolymer of ˜890 kg / m ³ And the C layer 14 are stacked in this order.

Since the dicing film of this embodiment includes the A layer which is a low-contamination layer (expandable film) containing low-density polyethylene, the dicing film has high expandability and excellent pickup properties. More specifically, A layer, the density contains a low density polyethylene which is ^{900kg / m 3 ~930kg / m 3} , has appropriate elasticity, the semiconductor wafer (semiconductor diced from the dicing film When the chip) is peeled off and picked up, the chip is not damaged and the pick-up property is good.
Furthermore, although the B layer described later is a layer that is more sticky than the A layer, in the dicing film of the present embodiment, since the A layer is laminated on the B layer, stickiness is prevented. Excellent anti-blocking properties.

Here, a semiconductor wafer to be diced is formed with a polyimide film, a solder electrode, a copper electrode, a scribe line for dicing, etc. on the surface, and the surface shape has a concavo-convex shape rich in undulations There is.
In recent years, there are also many wafers on which bumps such as solder bumps used for bonding a mounting board of a high-frequency device, such as a gold bump having a large undulation compared with a standard LSI, are seen. Therefore, preventing the breakage of the semiconductor wafer having these irregularities during dicing is also a major issue.

  Therefore, as a method of dicing a wafer having unevenness with such a large step, from the viewpoint of suppressing breakage and chipping during dicing, a dicing film is closely attached to the circuit forming surface side of the wafer, and a rotating blade is used. There is a method of cutting from the non-circuit forming surface. However, if a dicing film that does not have unevenness followability is used, a gap may be formed between the adhesive surface and the circuit forming surface, and the circuit forming surface may be damaged by scraps generated during cutting. It is difficult to suppress.

  On the other hand, the dicing film of the present embodiment has a B layer capable of absorbing irregularities on the surface of the semiconductor wafer. Furthermore, since the dicing film of this embodiment has a B layer described later, the wafer is in close contact with the irregularities on the surface of the semiconductor wafer, the wafer can be sufficiently held in the dicing process, and contamination of the circuit forming surface due to dicing, Can be prevented from being damaged.

Moreover, when the adhesiveness between the semiconductor chip obtained by dicing the semiconductor wafer and the dicing film is insufficient, the semiconductor chip may fall off during dicing. Since the dicing film of this embodiment has a C layer, which will be described later, as an adhesive layer on the outermost surface to be bonded to the semiconductor wafer, the adhesiveness to the semiconductor wafer and the semiconductor chip is good.
Furthermore, by using a radiation curable pressure sensitive adhesive or a thermosetting pressure sensitive adhesive as the C layer pressure sensitive adhesive, it is difficult for the pressure sensitive adhesive to adhere to the back surface and the through electrode of the semiconductor wafer after the pick-up process.

(A layer)
Dicing film according to the present embodiment includes a low density polyethylene density is ^{900kg / m 3 ~930kg / m 3} , an A layer thickness of 40Myuemu～150myuemu. A layer, for example, density is formed from a resin composition comprising a low density polyethylene which is ^{900kg / m 3 ~930kg / m 3} .
By using a low density polyethylene having a density of 900 kg / m ³ or more, crystallization hardly occurs during storage of the dicing film, which is preferable in terms of stability. Furthermore, it is preferable that the density is 900 kg / m ³ or more because it is not sticky and has excellent handling properties.
Moreover, it is preferable at a point which is excellent in pick-up property as a density is 930 kg / m < ³ > or less.

The density of low-density polyethylene ^is preferably ^{900kg / m 3 ~925kg / m 3} , more preferably ^{910kg / m 3 ~920kg / m 3} . Thereby, the dicing film excellent in stability and pick-up property can be provided.

What is necessary is just to measure the density of the low density polyethylene used by this embodiment, and the olefin type copolymer mentioned later using the density gradient tube method currently disclosed by Unexamined-Japanese-Patent No. 2001-33372. First, specifically, the obtained low density polyethylene sample or olefin copolymer sample is melted by a melt indexer to obtain a strand. And after annealing this strand, it cut | disconnects in a suitable magnitude | size and throws it into a density gradient tube.
As the density gradient tube, a glass cylindrical tube filled with a liquid having a continuous density gradient is used. The density of the sample is read from the equilibrium position where the solid sample of the low density polyethylene or olefin copolymer charged is stationary in the liquid. As the liquid filled in the glass cylindrical tube, an ethanol-water mixed liquid defined in Table 2 of JISK7112 is used.

  The melt flow rate (MFR) of low density polyethylene measured at 190 ° C. and 2.16 kg load according to ASTM D1238 is preferably in the range of 0.1 g / 10 min to 50 g / 10 min. It is more preferably in the range of 10 min to 20 g / 10 min, and further preferably in the range of 2 g / 10 min to 10 g / 10 min.

The molecular weight distribution (Mw / Mn) of the low density polyethylene is preferably 1.5 to 4.0. Moreover, it is preferable that the molecular weight distribution of the low density polyethylene is close to the molecular weight distribution of the olefin copolymer and the pressure sensitive adhesive described later in consideration of the coextrusion property.
In addition, what is necessary is just to measure molecular weight distribution (Mw / Mn) using a gel permeation chromatograph (GPC).

It does not specifically limit as a manufacturing method of the low density polyethylene used by this embodiment, For example, you may manufacture using a metallocene catalyst, a titanium-type catalyst, etc. Moreover, as a low density polyethylene, a commercial item may be used, for example, Prime Polymer Evole ^TM Co., Ltd., Nippon Polyethylene Co., Ltd. Novatec ^TM, etc. may be used.
Further, the low density polyethylene used in the present embodiment may be a high pressure method low density polyethylene. Examples of the high-pressure low-density polyethylene include Mirason ^TM manufactured by Mitsui DuPont Polychemical Co., Ltd.

The thickness of the A layer is not particularly limited as long as it is in the range of 40 μm to 150 μm, but is preferably in the range of 40 μm to 120 μm, more preferably in the range of 40 μm to 100 μm, and in the range of 40 μm to 70 μm. Is more preferable.
It is preferable that the thickness of the A layer is 40 μm or more from the viewpoint of appropriate rigidity and excellent handling properties. When the thickness of the A layer is 150 μm or less, the amount of deformation of the dicing film can be increased with respect to the push-up amount at the time of pickup, and this is preferable in terms of excellent expandability of the dicing film.

(B layer)
Dicing film according to the present embodiment, density comprises an olefin copolymer is ^{800kg / m 3 ~890kg / m 3} , with a B layer thickness of 20 m to 100 m. B layer may, for example, density is formed from a resin composition containing an olefin-based copolymer is ^{800kg / m 3 ~890kg / m 3} .
A density of 890 kg / m ³ or less is preferable in that it adheres to the irregularities (projection shape) on the surface of the semiconductor wafer and is excellent in irregularity followability. A density of 800 kg / m ³ or more is preferred in that stickiness during film formation can be suppressed.

  The olefin-based copolymer is preferably an α-olefin copolymer having an α-olefin having 2 to 12 carbon atoms as a main component. Examples of the α-olefin having 2 to 12 carbon atoms include ethylene, propylene, 1-butene, 1-pentene, 3-methyl-1-butene, 1-hexene, 4-methyl-1-pentene, and 3-methyl. Examples include -1-pentene, 1-heptene, 1-octene, 1-decene, and 1-dodecene.

Examples of the olefin copolymer include an ethylene / α-olefin copolymer, a propylene / α-olefin copolymer, and a butene / α-olefin copolymer. Of these, an ethylene / α-olefin copolymer is preferable, and examples of the ethylene / α-olefin copolymer include an ethylene / butene copolymer and an ethylene / propylene copolymer.
Among them, ternary copolymer of ethylene / propylene copolymer, ethylene / 1-butene copolymer, ethylene / propylene / α-olefin having 4 to 12 carbon atoms is superior in terms of excellent conformability at the time of pasting. Preferred are ethylene / α-olefin copolymers such as coalescence, propylene / 1-butene copolymer / α-olefin terpolymer having 5 to 12 carbon atoms, and ethylene / propylene copolymer is preferred. More preferred. This is because propylene has high heat-meltability among olefin copolymers.

The density of the olefinic copolymer is ^{preferably 830kg / m 3 ~890kg / m 3} , more preferably from ^{850kg / m 3 ~890kg / m 3} , 850kg / m 3 ~870kg / m 3 More preferably.

The melt flow rate (MFR) of the olefin copolymer measured at 190 ° C. and 2.16 kg load in accordance with ASTM D1238 is preferably in the range of 0.1 g / 10 min to 50 g / 10 min. It is more preferably in the range of 1 g / 10 min to 20 g / 10 min, and further preferably in the range of 2 g / 10 min to 10 g / 10 min.
The MFR of the olefin copolymer is preferably close to the value of the MFR of the low density polyethylene described above in consideration of coextrusion, and both of the MFR of the olefin copolymer and the low density polyethylene are 2 g / 10 min. More preferably, it is in the range of -10 g / 10 min.

Also, in the olefinic co-polymer may be a commercially available product, for example, may be manufactured by Mitsui Chemicals, Inc. TAFMER ^TM like.

The thickness of the B layer is, for example, preferably in the range of 20 μm to 100 μm, more preferably in the range of 30 μm to 80 μm, and still more preferably in the range of 40 μm to 60 μm.
Here, when the thickness of the B layer is 20 μm or more, it is preferable in that the unevenness of the surface of the semiconductor wafer can be embedded and the unevenness followability is excellent, and when the thickness of the B layer is 100 μm or less, the dicing film It is preferable in terms of excellent extensibility.
Moreover, it is preferable that the thickness of B layer is larger than the level | step difference provided in one surface of the semiconductor wafer which adhere | attaches a dicing film. That is, the thickness of the B layer is preferably a thickness that can bury the step (for example, irregularities (including solder bumps) on the circuit formation surface of the semiconductor wafer).

  The B layer may contain other resins or other additives within a range that does not impair easy pastability and easy peelability to the semiconductor wafer. Examples of such additives include ultraviolet absorbers, antioxidants, heat stabilizers, lubricants, softeners, and tackifiers.

(C layer)
The dicing film according to the present embodiment includes a C layer that is at least one pressure-sensitive adhesive selected from the group consisting of a radiation-curable pressure-sensitive adhesive and a thermosetting pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive is a pressure-sensitive adhesive that lowers the pressure-sensitive adhesive force by irradiation of radiation, and the thermosetting pressure-sensitive adhesive is a pressure-sensitive adhesive that reduces the pressure-sensitive adhesive force by heating.
Examples of radiation include ultraviolet rays, electron beams, X-rays, α rays, β rays, γ rays, visible rays, infrared rays, etc. Among them, ultraviolet rays are preferable. Moreover, an ultraviolet curable adhesive is mentioned as a preferable example of a radiation curable adhesive.

  The curable pressure-sensitive adhesive may be a known pressure-sensitive adhesive, and may be, for example, a rubber-based, acrylic-based, or silicone-based pressure-sensitive adhesive, or a thermoplastic elastomer such as a styrene-based elastomer or an olefin-based elastomer. The known pressure-sensitive adhesive may be an ultraviolet curable pressure-sensitive adhesive or a heat-curable pressure-sensitive adhesive described in paragraphs [0049] to [0055] of Japanese Patent No. 4945014. The pressure-sensitive adhesive may contain components such as a photopolymerization initiator, a thermal polymerization initiator, and a crosslinking agent described in paragraphs [0056] to [0061] of Japanese Patent No. 4945014.

  The adhesive strength of the C layer is appropriately selected according to the use of the dicing film. If the adhesive strength of the C layer is too low, the dicing film may not be sufficiently adhered to the protected member. Further, if the adhesiveness of the C layer is too high, the semiconductor wafer may be damaged when the semiconductor wafer is peeled off from the dicing film, or the C layer may remain on the surface of the semiconductor wafer.

  The adhesive strength measured according to JIS Z0237 when the C layer is adhered to the surface of the SUS-304-BA plate and allowed to stand for 60 minutes and then peeled off from the surface of the SUS-304-BA plate is: It is preferable that it is 0.1N / 25mm-10N / 25mm. If the adhesive strength is in the above range, it is possible to suppress the adhesive residue when the chip is peeled off while ensuring good adhesion to the wafer. The adhesive strength of the C layer can be adjusted by, for example, the amount of the crosslinking agent added. Specifically, it can be adjusted by the method described in JP-A No. 2004-155591.

  The thickness of the C layer is not particularly limited as long as it does not impair the expandability of the A layer and the unevenness followability of the B layer, but is preferably 1 μm to 50 μm, and more preferably 1 μm to 30 μm. When the thickness of the C layer is 1 μm or more, sufficient adhesiveness can be obtained, and when the thickness of the C layer is 50 μm or less, the cohesive failure of the C layer can be suppressed, and the C layer is formed on the adherend surface. It is possible to suppress the remaining adhesive.

(Lubricant layer)
The A layer is a layer having excellent sticking stability, dicing stability and pick-up property and having high expandability. The A layer itself may contain 1% by mass or less of a lubricant component such as a silicone-based lubricant described later. Preferably, it is more preferable not to contain a lubricant component. Further, as described below, a lubricant layer (NB layer) containing a lubricant component may be provided as a layer in contact with the A layer on the side opposite to the surface in contact with the B layer.
In addition, "A layer contains 1 mass% or less of a lubricant component" means that the lubricant component is not substantially contained.

  FIG. 2 is a cross-sectional view schematically showing the dicing film 20 according to this embodiment including the lubricant layer 16. As shown in FIG. 2, an expandable A layer 12, a B layer 13 disposed on one surface of the A layer 12 to absorb unevenness of the semiconductor wafer, a C layer 14 bonded to the wafer, and the A layer 12 , And the lubricant layer 16 disposed on the surface opposite to the B layer 13 and the C layer 14.

  The lubricant layer is formed from a resin, such as polyethylene or ethylene ionomer resin. The resin forming the lubricant layer preferably contains the same low density polyethylene as the A layer. Furthermore, a lubricant layer prevents blocking between films by containing a lubricant component. Moreover, when a dicing film is provided with a lubricant layer, when a dicing film is expanded using an expander, the dicing film on the stage becomes slippery, and the entire surface of the dicing film can be expanded more uniformly.

The lubricant component contained in the lubricant layer is not particularly limited, and examples thereof include silicone-based lubricants, erucic acid amides, and oleic acid amides, and silicone-based lubricants are particularly preferable.
The content of the lubricant component is preferably 1% by mass to 10% by mass and more preferably 3% by mass to 8% by mass with respect to the resin component (for example, low density polyethylene).
As the lubricant component, commercially available products may be used, for example, trade name BY27-002 which is a silicone resin manufactured by Toray Dow Corning Silicone.

  The lubricant layer is preferably thinner than the A layer, preferably 1 μm to 30 μm, more preferably 5 μm to 20 μm.

In addition, the dicing film of this embodiment is formed by laminating A layer / B layer / C layer in this order, but it is a laminated film of four or more layers having other layers such as a lubricant layer (low friction layer). There may be.
The lubricant layer is preferably disposed on the other surface side of the A layer (opposite side of the B layer). In addition, layers other than the above may be laminated between the A layer / B layer / C layer or the lubricant layer / A layer / B layer / C layer, as long as the effects of the present invention are not impaired. .

  A separator may be further provided on the surface of the C layer of the dicing film of the present embodiment, as necessary, in order to protect the C layer that is an adhesive layer. The material of the separator may be paper, a synthetic resin film such as polyethylene, polypropylene, and polyethylene terephthalate. The thickness of the separator is usually about 10 μm to 200 μm, preferably about 25 μm to 100 μm.

  In the dicing film of the present embodiment, the total thickness is preferably more than 60 μm and 300 μm or less, more preferably 80 μm to 250 μm, and further preferably 100 μm to 200 μm. As total thickness, total thickness of A layer, B layer and C layer, lubricant layer, total thickness of A layer, B layer and C layer, total thickness of A layer, B layer, C layer and other layers, lubricant layer , A layer, B layer, C layer and the total thickness of other layers.

In the dicing film of this embodiment, the thickness of the B layer is preferably ½ or less of the total thickness.
Moreover, in the dicing film of this embodiment, it is preferable that the thickness of B layer is 1/4 or more of total thickness.

  The dicing film of the present embodiment preferably has a tensile modulus measured according to JIS K7161 in the range of 30 MPa to 90 MPa, and more preferably in the range of 50 MPa to 90 MPa. When the tensile elastic modulus is within the above range, even a thin wafer can be removed without damage when dicing (excellent pick-up property). Similarly, the dicing film preferably has a tensile 25% modulus (tensile stress at 25% elongation) measured in accordance with JIS K 7161 of 5.0 MPa or less.

[Method of manufacturing dicing film]
The dicing film of this embodiment can be manufactured by arbitrary methods. For example, the dicing film of the present embodiment includes: 1) a method of laminating a molten resin constituting each layer by extrusion molding or coextrusion (coextrusion method); 2) a molten resin constituting another layer on one layer. Method of laminating (extrusion laminating method); 3) Method of laminating films constituting each layer via thermocompression bonding or an adhesive (laminating method); and 4) On a resin laminate in which A layer and B layer are laminated Alternatively, it may be produced by a method of applying and laminating the resin composition constituting the C layer which is the pressure-sensitive adhesive layer (coating method).
When the dicing film of this embodiment is a laminated film including other layers such as a low friction layer (lubricant layer), the other layers can be laminated by a coextrusion method or an extrusion lamination method as described above. .

  The method of blending two or more different resins before extrusion molding or coextrusion is not particularly limited, but is a method of dry mixing with various mixers such as a Henschel mixer and a tumbler mixer (dry blending method); A melt kneading method using a twin screw extruder or the like (melt blend method) may be used, and a melt kneading method using a twin screw extruder is preferred.

  The melt kneading temperature may be a temperature suitable for melting and kneading the resin constituting each layer, and the melting temperature of the resin constituting the base material layer may be, for example, 180 to 260 ° C. The extrusion method is not particularly limited, and may be an inflation extrusion method, a T-die extrusion method, or the like.

  When the pressure-sensitive adhesive forming the C layer is a radiation curable pressure-sensitive adhesive, the pressure-sensitive adhesive is coated on the separator, and the dried one can be bonded to the layer A (base material layer). preferable. A method of drying after coating directly on the A layer or on the resin laminate of the A layer and the B layer (the aforementioned coating method) may be used. The resin laminate of the A layer and the B layer is obtained by coextruding the resin composition constituting the A layer and the resin composition constituting the B layer, or on the A layer, the resin composition constituting the B layer. The product can be obtained by extrusion lamination.

  The pressure-sensitive adhesive constituting the C layer is appropriately selected according to the type of the member to be protected. Examples of the pressure-sensitive adhesive include natural rubber type; synthetic rubber type; silicone rubber type; acrylic pressure-sensitive adhesive such as alkyl acrylate ester and alkyl methacrylate ester. Among these pressure-sensitive adhesives, acrylic pressure-sensitive adhesives are preferable from the viewpoint of tackiness and the like.

  The pressure-sensitive adhesive constituting the C layer may be, for example, a radiation-curing type, a heat-curing type, a heat-foaming type, or the like, or a pressure-sensitive adhesive having a pressure-sensitive adhesive switching function that lowers the pressure depending on certain conditions. An adhesive having no switching function may be used. In the case where the adhesive is an adhesive having an adhesive force switching function such as a radiation curable type, a thermosetting type, a heating foam type, etc., the adhesive strength after the adhesive force is reduced by switching the adhesive force by radiation irradiation, It is preferable that it exists in the said range (0.1N / 25mm-10N / 25mm).

  As the adhesive, an acrylic ultraviolet curable adhesive having an adhesive force switching function is preferable. When the C layer has an adhesive force switching function, the semiconductor chip can be easily peeled from the dicing film, and there is little possibility of damaging the semiconductor chip.

  The acrylic UV curable pressure-sensitive adhesive is, for example, (1) 100 parts by mass of an acrylic ester copolymer having a photopolymerizable carbon-carbon double bond introduced in the molecule, and (2) photopolymerization in the molecule. It may be a pressure-sensitive adhesive containing 0.1 to 20 parts by mass of a low molecular weight compound having two or more carbon-carbon double bonds and (3) 5 to 15 parts by mass of a photoinitiator.

  Acrylic ester copolymer having a photopolymerizable carbon-carbon double bond introduced in its molecule, which is contained in an acrylic UV curable adhesive, is 1) a monomer having an ethylenic double bond. And a copolymer obtained by copolymerizing a copolymerizable monomer having a reactive functional group, and 2) a monomer having a photopolymerizable carbon-carbon double bond having a group capable of reacting with the reactive functional group. It can be a reacted compound.

  (1) Monomers having an ethylenic double bond constituting the copolymer of 1) for obtaining an acrylic ester copolymer are methyl methacrylate, 2-ethylhexyl acrylate, butyl acrylate, acrylic Acrylic acid alkyl ester or methacrylic acid alkyl ester monomers such as ethyl acid; vinyl esters such as vinyl acetate; monomers having an ethylenic double bond such as acrylonitrile; acrylamide; styrene;

  In addition, (1) a copolymerizable monomer having a reactive functional group constituting the copolymer of 1) for obtaining an acrylic ester copolymer is (meth) acrylic acid, maleic acid, 2-hydroxy It may be ethyl (meth) acrylate, glycidyl (meth) acrylate, N-methylol (meth) acrylamide or the like. Only one of these may be polymerized with the monomer having an ethylenic double bond, or two or more may be polymerized.

  When obtaining the copolymer of 1) above, the polymerization ratio between the monomer having an ethylenic double bond and the copolymerizable monomer having a reactive functional group is 70% by mass to 99% by mass: 30% by mass to 1%. It is preferable that it is mass%, and it is preferable that they are 80 mass%-95 mass%: 20 mass%-5 mass%.

  In addition, (1) the monomer containing a photopolymerizable carbon-carbon double bond of 2) for synthesizing an acrylate ester copolymer is not particularly limited, and the reaction contained in the copolymer of 1) above. Any monomer (photoreactive monomer) containing a photopolymerizable carbon-carbon double bond having a group capable of reacting with a functional group (for example, carboxyl group, hydroxyl group, glycidyl group, etc.) may be used.

  Examples of the combination of the reactive functional group of the copolymer of 1) above and the group capable of reacting with the reactive functional group of the photoreactive monomer include a carboxyl group and an epoxy group, a carboxyl group and an aziridyl group, and a hydroxyl group. And isocyanate groups. Among such combinations, a combination that easily causes an addition reaction is desirable. The group capable of reacting with the reactive functional group of the photoreactive monomer is not limited to the group that undergoes an addition reaction with the reactive functional group of the copolymer of 1), but is a group that undergoes a condensation reaction with the reactive functional group. There may be.

  Examples of the low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in the molecule contained in the acrylic ultraviolet curable pressure-sensitive adhesive include tripropylene glycol di (meth) acrylate, Examples include methylolpropane tri (meth) acrylate, tetramethylolmethane tetraacrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, and dipentaerythritol hexa (meth) acrylate. Only one kind of these low molecular weight compounds may be contained in the acrylic ultraviolet curable pressure-sensitive adhesive, or two or more kinds thereof may be contained. The low molecular weight compound is a compound having a molecular weight of 10,000 or less, and the molecular weight of the low molecular weight compound is more preferably 5,000 or less.

  Examples of (3) photoinitiators contained in the acrylic UV curable adhesive include, for example, benzoin, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, acetophenone diethyl Ketal, benzyl dimethyl ketal, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one and the like can be mentioned. The ultraviolet curable pressure-sensitive adhesive may contain only one type or two or more types of photoinitiators. The amount of the photoinitiator in the ultraviolet curable pressure-sensitive adhesive is preferably 5 parts by mass to 15 parts by mass with respect to 100 parts by mass of the acrylic ester copolymer of (1). More preferably, it is 5-10 mass parts.

  The acrylic ultraviolet curable pressure-sensitive adhesive may contain a crosslinking agent. Examples of the cross-linking agent include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, diglycerol polyglycidyl ether, tetramethylolmethane-tri-β-aziridinyl propionate, Trimethylolpropane-tri-β-aziridinylpropionate, N, N′-diphenylmethane-4,4′-bis (1-aziridinecarboxamide), N, N′-hexamethylene-1,6-bis ( 1-aziridinecarboxamide) and the like; and isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, and polyisocyanate;

  The acrylic ultraviolet curable pressure-sensitive adhesive may contain rosin-based, terpene resin-based tackifiers, various surfactants, and the like in order to adjust the adhesive properties.

[Method of Manufacturing Semiconductor Device]
The manufacturing method of the semiconductor device using the dicing film of the present embodiment includes 1) a step of bonding the C layer to the back surface of the semiconductor wafer, 2) a step of dicing the semiconductor wafer, and 3) dicing. It is manufactured through the process of expanding (expanding) the film and picking up a diced semiconductor wafer (semiconductor chip), and 4) the process of attaching the semiconductor chip to a die pad (not shown) of a semiconductor device and mounting it. The The dicing film described above can be used as the dicing film of the present invention.

  3A to 3E show a method for manufacturing a semiconductor device using a dicing film 50 having a B layer 53 and a C layer 54 in this order on one surface of the A layer 52 and a lubricant layer 56 on the other surface. It is a figure which shows an example.

  As shown in FIG. 3A, a wafer 42 having irregularities such as circuits on the surface and the dicing film 50 are prepared. In the wafer 42 on which the circuit is formed, a circuit protective layer for protecting the circuit may be provided. The circuit protective layer only needs to contain an insulating resin. For example, it may contain a polyimide resin, a polybenzoxazole resin, an epoxy resin, or the like.

  As shown in FIG. 3B, the uneven surface of the wafer 42 is attached to the dicing film 50 of the present invention under heating (step 1). The sticking can be performed at a temperature of 40 ° C. to 80 ° C. and a pressure of 0.3 MPa to 0.5 MPa. When the temperature at the time of sticking is less than 40 ° C., the elastic modulus of the B layer 53 is unlikely to be low, and the followability to the unevenness of the B layer 53 is low. Moreover, when the temperature at the time of sticking exceeds 80 degreeC, it is not preferable as process temperature. The dicing film 50 can be attached by a known tape applicator.

  After adhering the wafer 42, the dicing film 50 may be cooled. By cooling the dicing film 50 from the temperature at the time of sticking, the elastic modulus of the B layer 53 is increased, and the state where the B layer 53 and the unevenness of the wafer 42 are in good contact can be maintained.

  The dicing film 50 has a diameter larger than that of the wafer 42, and has a size that allows the periphery of the dicing film 50 to be fixed by the ring frame 46. Then, the peripheral edge portion of the dicing film 50 is fixed by the ring frame 46.

  Next, as shown in FIG. 3C, the wafer 42 is diced (cut) to obtain semiconductor chips 42A (step 2). The cutting depth may be set to such an extent that it reaches the interface between the A layer 52 and the B layer 53 of the dicing film 50. The cutting means is not particularly limited, and may be a dicing saw or a laser.

  Next, as shown in FIG. 3D, the dicing film 50 is expanded (expanded) (step 3). The means for expanding (expanding) the dicing film 50 is a method of expanding the dicing film 50 in contact with the stage by raising the stage of the expansion machine below the dicing film 50, or pulling (expanding) the dicing film 50 in a direction parallel to the film surface. ) Method etc. are included.

  As a result, as shown in FIG. 3E, the interval between the semiconductor chips 42A obtained by dicing can be increased. Further, the dicing film 50 is expanded (expanded) and pushed up from below the semiconductor chip 42A, whereby the dicing film 50 is locally extended, and the contact area between the semiconductor chip 42A and the C layer 54 is reduced, and the adhesive force is reduced. The semiconductor chip 42A can be picked up by sucking the semiconductor chip 42A with a jig. As described above, when the semiconductor chip 42 </ b> A is picked up, the semiconductor chip 42 </ b> A can be peeled off from the C layer 54 of the dicing film 50.

The present invention will be described more specifically with reference to the following examples. However, the present invention is not limited to these examples.
In this example, the low density polyethylene, olefin copolymer, and pressure-sensitive adhesive shown in the following (1) to (6) were mainly used.

(1) Low density polyethylene (LLDPE)
In Examples 1 to 4 and Comparative Example 1, trade name Evolue SP2040 (manufactured by Prime Polymer Co., Ltd.) was used as the low density polyethylene (LLDPE) contained in the A layer. The physical property values of this low density polyethylene are as follows.
Flexural modulus (E ′ 25 ° C.): 150 MPa
MFR (190 ° C.): 3.8 g / 10 min
Density: 918kg / m ³
Melting point: 116 ° C
Type D durometer hardness: 55

(2) Low density polyethylene (LDPE)
In Example 5, trade name Mirason (registered trademark) 401 (Mitsui / DuPont Polychemical Co., Ltd.) was used as the low density polyethylene (LDPE) contained in the A layer. The physical property values of this low density polyethylene are as follows.
Flexural modulus (E '25 ° C): 220 MPa
MFR (190 ° C.): 1.6 g / 10 min
Density: 920 kg / m ³
Melting point: 107 ° C
Type D durometer hardness: 51

(3) Low density polyethylene (LLDPE)
In Comparative Example 2, trade name Evolue SP4030 (manufactured by Prime Polymer Co., Ltd.) was used as the low density polyethylene (LLDPE) contained in the A layer. The physical property values of this low density polyethylene are as follows.
Flexural modulus (E ′ 25 ° C.): 550 MPa
MFR (190 ° C.): 3.8 g / 10 min
Density: 938 kg / m ³
Melting point: 127 ° C
Type D durometer hardness: 59

(4) Olefin copolymer (ethylene-vinyl acetate copolymer; EVA)
In Comparative Example 4, a product name EVAFLEX (registered trademark) EV170 (manufactured by Mitsui DuPont Polychemical Co., Ltd.), which is an olefin copolymer (ethylene-vinyl acetate copolymer; EVA), is used instead of low-density polyethylene. It was. The physical property values of this olefin copolymer are as follows.
Flexural modulus (E ′ 25 ° C.): 8 MPa
MFR (190 ° C.): 3.0 g / 10 min
Density: 960 kg / m ³
Melting point: 61 ° C
JIS-A hardness: 67

(5) Olefin copolymer (B layer)
In Examples 1 to 5 and Comparative Examples 1 to 4, the trade name TAFMER (registered trademark) P0275 (ethylene / α-olefin copolymer manufactured by Mitsui Chemicals, Inc.) is used as the olefin copolymer contained in the B layer. Using. The physical property values of this olefin copolymer are as follows.
Flexural modulus (E ′ 25 ° C.): 6 MPa
MFR (190 ° C.): 5.4 g / 10 min
Density: 861 kg / m ³
Melting point: 45 ° C
JIS-A hardness: 55

(6) Adhesive In Examples 1 to 5 and Comparative Examples 1 to 4, an acrylic adhesive (UV curable adhesive) for forming the C layer was used. The method for preparing the acrylic pressure-sensitive adhesive is as follows.

  First, 48 parts by mass of ethyl acrylate, 27 parts by mass of 2-ethylhexyl acrylate, 20 parts by mass of methyl acrylate, 5 parts by mass of glycidyl methacrylate, and 0.5 parts by mass of benzoyl peroxide as a polymerization initiator were mixed. The mixed solution was dropped into a nitrogen-substituted flask containing 65 parts by mass of toluene and 50 parts by mass of ethyl acetate with stirring at 80 ° C. over 5 hours, and further reacted by stirring for 5 hours. After completion of the reaction, the solution was cooled, and 25 parts by mass of xylene, 2.5 parts by mass of acrylic acid and 1.5 parts by mass of tetradecylbenzylammonium chloride were added thereto, and reacted at 80 ° C. for 10 hours while blowing air. An acrylic acid ester copolymer solution into which a photopolymerizable carbon-carbon double bond was introduced was obtained.

  In this acrylic acid ester copolymer solution, 7 parts by mass of benzoin as a photoinitiator and 100 parts by mass of a copolymer (solid content), an isocyanate-based crosslinking agent (trade name: Olester P49, manufactured by Mitsui Chemicals, Inc.) -75S) 2 parts by mass Dipentaerythritol hexaacrylate (trade name: Aronix M-400, manufactured by Toagosei Co., Ltd.) as a low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in one molecule 15 parts by mass was added to obtain an acrylic pressure-sensitive adhesive.

[Example 1]
As the raw material for the A layer, the aforementioned low-density polyethylene (trade name Evolue SP2040) is prepared. As the raw material for the B layer, the aforementioned olefin-based copolymer (trade name: Toughmer P0275) is prepared. As mentioned above, the above-mentioned adhesive (acrylic adhesive) was prepared.
Moreover, the above-mentioned low density polyethylene (trade name Evolve SP2040) and a silicone resin (trade name BY27-002 manufactured by Toray Dow Corning Silicone Co., Ltd.) were prepared as a raw material for the lubricant layer containing the silicone lubricant. In addition, 5 mass% silicone resin was used with respect to the low density polyethylene.

[Production of dicing film]
Subsequently, each raw material of the A layer and the B layer was put into each extruder equipped with a full flight type screw and melt-kneaded. Then, two layers were coextruded with a T die at an extrusion temperature of 250 ° C. to form a base film. Next, a corona treatment was performed on the surface of the B layer of the base film.
The surface on the side where the release treatment of the release PET film (release film, product name SP-PET, manufactured by Tosero Co., Ltd.) having a thickness of 38 μm, which has been subjected to silicone treatment (release treatment) on one surface, is described above. A pressure-sensitive adhesive was coated with a comma coater and dried to prepare a film with pressure-sensitive adhesive as a C layer. A laminated film (dicing film) in which the A layer, the B layer, and the C layer were laminated in order was produced by pasting the C layer as an adhesive on the surface of the B layer.
The thickness of each layer of the dicing film was 70 μm / 50 μm / 5 μm.

[Example 2]
In Example 2, a lubricant film is formed on the surface of the A layer opposite to the side on which the B layer is provided, and the lubricant film, the A layer, the B layer, and the C layer are sequentially laminated (dicing film). Film).
Specifically, each raw material of the A layer, the B layer, and the lubricant layer was put into each extruder equipped with a full flight type screw and melt-kneaded. Then, a three-layer coextrusion molding was performed by a T die at an extrusion temperature of 250 ° C. to form a base film. Next, a corona treatment was performed on the surface of the B layer of the base film.
Next, the above-mentioned pressure-sensitive adhesive was coated on a release PET film to prepare a film with pressure-sensitive adhesive as a C layer. A laminated film (dicing film) in which the lubricant layer, the A layer, the B layer, and the C layer were laminated in order was produced by bonding the C layer as an adhesive to the surface of the B layer.
As for the thickness of each layer of the dicing film, the thickness of the lubricant layer / A layer / B layer / C layer was 10 μm / 70 μm / 50 μm / 5 μm.

[Examples 3 and 4]
In Example 3, a dicing film was prepared in the same manner as in Example 2 except that the thickness of the A layer was changed to 100 μm. In Example 4, the thickness of the A layer was changed to 50 μm, and the B layer A dicing film was produced in the same manner as in Example 2 except that the thickness was changed to 45 μm.

Example 5
In Example 5, a dicing film was produced in the same manner as in Example 2 except that trade name Mirason 401 (Mitsui / DuPont Polychemical Co., Ltd.) was used as the low density polyethylene contained in the A layer and the lubricant layer. .

[Comparative Example 1]
In Comparative Example 1, a dicing film was produced in the same manner as in Example 2 except that the thickness of the A layer was changed to 160 μm, the thickness of the B layer was changed to 110 μm, and the thickness of the C layer was changed to 50 μm.

[Comparative Example 2]
In Comparative Example 2, as described above, a dicing film was prepared in the same manner as in Example 2 except that trade name Evolue SP4030 (manufactured by Prime Polymer Co., Ltd.) was used as the low density polyethylene contained in the A layer and the lubricant layer. Produced.

[Comparative Example 3]
In Comparative Example 3, a dicing film was produced in the same manner as in Example 2 except that the A layer and the lubricant layer were not provided and the thickness of the B layer was 100 μm.

[Comparative Example 4]
In Comparative Example 4, the lubricant layer is not provided, and the low-density polyethylene contained in the A layer is changed to an ethylene-vinyl acetate copolymer (EVA: trade name EVAFLEX (registered trademark) EV170) to change the thickness of the A layer. A dicing film was produced in the same manner as in Example 1 except that the thickness was 50 μm.

1) Measurement of tensile elastic modulus and tensile 25% modulus The tensile elastic modulus and tensile 25% modulus of the dicing film obtained as described above were measured by a method according to JIS K7161. That is,
i) The dicing film was cut to prepare a strip-shaped sample piece having a width (TD direction) of 10 mm and a length (MD direction) of 100 mm.
ii) Next, the tensile elastic modulus and the tensile 25% modulus of the sample piece were measured with a tensile tester under conditions of a distance between chucks of 50 mm and a tensile speed of 200 mm / min. The measurement was performed under conditions of a temperature of 23 ° C. and a relative humidity of 55%.

2) Measurement of adhesive strength The adhesive strength (adhesive strength of the C layer) of the dicing film obtained as described above was measured at a temperature of 23 ° C. and a relative humidity of 50% in accordance with the adhesive sheet test method described in JIS Z0237. It measured in the environment of. The dicing film from which the release PET film had been peeled was attached to a SUS-BA plate while applying pressure with an approximately 2 kg rubber roll, and placed in a constant environment at a temperature of 23 ° C. and a relative humidity of 50% for 30 minutes. Next, the adhesive force when the film was peeled off from the SUS-BA plate at a peeling speed of 300 mm / min in the 180 ° direction was measured. This adhesive strength was measured twice. The average value of the adhesive strength when measured using a test piece having a width of 25 mm was defined as “adhesive strength” (N / 25 mm).

3) Stress at 1% elongation The stress at 1% elongation of the dicing film obtained as described above was measured by the following method. That is,
i) The dicing film was cut to prepare a strip-shaped sample piece having a width (TD direction) of 25 mm and a length (MD direction) of 150 mm.
ii) Next, the sample piece was pulled by a tensile tester under the conditions of a distance between chucks of 100 mm and a tensile speed of 10 mm / min, and the stress at the time when the elongation was 1 mm was measured. The measurement was performed under conditions of a temperature of 23 ° C. and a relative humidity of 55%.

4) Static friction coefficient The static friction coefficient of the surface of the dicing film obtained as described above was measured by the following method. For Example 1 and Comparative Example 4, the surface to be measured is the A layer surface, for Examples 2 to 5 and Comparative Examples 1 and 2, the surface to be measured is the surface of the lubricant layer, and for Comparative Example 3, the measurement is The surface to be used was the surface of the B layer.
In accordance with JIS K7125, the static friction coefficient was measured in an environment of a temperature of 23 ° C. and a relative humidity of 50%. First, the dicing film was cut out to 63.5 mm × 200 mm, and a 63 mm × 63 mm SUS plate was installed as a sliding piece on the measurement surface. A weight was placed on the sliding piece so that the total weight of the sliding piece and the weight was 200 g (g). The sliding piece was pulled horizontally by a tensile tester at a test speed of 100 mm / min, the load (F) when the sliding piece started to move was measured, and the static friction coefficient was calculated by the following equation.
Formula) Static friction coefficient μ = F / g

  Table 1 below shows the results of tensile modulus, tensile 25% modulus, adhesive strength, 1% elongation stress, and static friction coefficient.

[Handling evaluation]
Next, after the dicing film was attached to a silicon wafer (diameter 12 inches) and a ring frame (manufactured by Disco) via a C layer, the handling property was evaluated according to the following criteria.
A ・ ・ ・ ・ No wrinkle on the surface of the dicing film (surface of the A layer) (all 25 sheets)
B ... Wrinkles occur on the surface of the dicing film (surface of the A layer) (1 or more of 25 sheets)

[Dicing evaluation]
A disco BG machine (DGP8760) was used to grind the silicon wafer to a thickness of 50 μm. The silicon wafer ground in advance was bonded to the dicing film together with the ring frame as described above, and then diced to 5 mm × 5 mm using a disco dicing saw (DFD3240). And the silicon chip edge part after dicing was observed with the microscope, and the dicing property was evaluated on the following reference | standard.
A ··· No chipping of less than 10 µm and no chip loss B · ··· Chipping of 10 µm or more, or chip lost during dicing

[Pickup evaluation]
Next, after expanding the dicing film, a silicon chip after dicing (thickness 50 μm) was picked up using a flip chip bonder device FCB3 manufactured by Panasonic Corporation. The pickup property at this time was evaluated according to the following criteria.
A ... Number of pickups per 10 Trys (no damage) = 10 (pieces)
B ... Number of pickups per 10 Trys (no damage) <10 (pieces)

For Examples 1-5, the stress at 1% elongation is 300 g / 25 mm or less, and when the silicon chip is peeled off from the dicing film and picked up, it can be removed without damaging the chip. It was good (Evaluation A). Furthermore, about Examples 1-5, since the static friction coefficient of the surface (A layer surface) is 0.1-2.0, the surface was not sticky and the blocking property was favorable.
For Comparative Examples 1 and 2, the stress at 1% elongation was more than 300 g / 25 mm, and when the silicon chip was peeled off from the dicing film and picked up, the chip was damaged and the pick-up property was poor. (Evaluation B).
Moreover, about the comparative examples 3 and 4, since the static friction coefficient of the surface was 2.0 or more, the surface was sticky and the blocking property was unsatisfactory.

  As shown in Table 1, it was found that the dicing film provided with the predetermined A layer, B layer and C layer was excellent in anti-blocking property, handling property, dicing property and pickup property.

10, 20, 50 Dicing film 12, 52 A layer 13, 53 B layer 14, 54 C layer 16, 56 Lubricant layer 42 Wafer 46 Ring frame

Claims (9)

(1) A sample piece having a width of 25 mm and a length of 150 mm is used, and when the sample piece is pulled with a tensile tester at a distance between chucks of 100 mm and a tensile speed of 10 mm / min, the stress at 1% elongation is 300 g / 25 mm or less. And (2) the coefficient of static friction of the surface measured according to JIS K7125 is 0.1 to 2.0,
Satisfying dicing film. Density comprises a low density polyethylene which is ^{900kg / m 3 ~930kg / m 3} , and A layer is a thickness 40Myuemu～150myuemu,
Density comprises an olefin copolymer is ^{800kg / m 3 ~890kg / m 3} , and a thickness of 20 m to 100 m B layer,
C layer which is at least one pressure-sensitive adhesive selected from the group consisting of a radiation-curable pressure-sensitive adhesive and a thermosetting pressure-sensitive adhesive;
The dicing film according to claim 1, wherein the layers are laminated in this order.   The dicing film according to claim 2, wherein the thickness of the B layer is ½ or less of the total thickness of the dicing film.   The said A layer is a dicing film of Claim 2 containing 1 mass% or less of lubricant components.   Furthermore, the layer containing a lubricant component is laminated | stacked on the said A layer on the opposite side to the surface in which the said B layer is provided, The claim 1 of any one of Claims 2-4. Dicing film.   The dicing film according to any one of claims 1 to 5, wherein the total thickness is more than 60 µm and 300 µm or less. A step of bonding the dicing film according to any one of claims 1 to 6 to a semiconductor wafer including a through electrode;
Obtaining a semiconductor chip by dicing the semiconductor wafer;
Expanding the dicing film and picking up the semiconductor chip;
A method for manufacturing a semiconductor device, comprising:   The dicing film according to any one of claims 2 to 5 is bonded to the semiconductor wafer so that the semiconductor wafer and the C layer are in contact with each other in the bonding step. Semiconductor device manufacturing method.   The method for manufacturing a semiconductor device according to claim 8, wherein the total thickness is more than 60 μm and not more than 300 μm.