JP5449622B2 - Adhesive film, dicing die bonding film, and semiconductor processing method using the same - Google Patents

Description

  The present invention relates to an adhesive film, a dicing die bonding film, and a semiconductor processing method using the same.

  In the manufacturing process of a semiconductor device such as an IC, a back grinding process for grinding the back surface of the semiconductor wafer in order to reduce the thickness of the semiconductor wafer after the circuit pattern is formed, and a semiconductor wafer processing tape having adhesiveness and stretchability on the back surface of the semiconductor wafer A dicing process that divides the semiconductor wafer into semiconductor chips after bonding, a process that expands the semiconductor wafer processing tape, a process that picks up the divided semiconductor chip, a lead frame, a package substrate, etc. In a stacked package, a die bonding (mounting) step is performed in which semiconductor chips are stacked and bonded together. In such a manufacturing process, a dicing die bonding tape in which an adhesive film and an adhesive tape are laminated in this order on a base film is used.

In general, when using a dicing die bonding tape, first attach the dicing die bonding tape adhesive film to the backside of the semiconductor wafer to fix the semiconductor wafer, and then use a dicing blade to attach the semiconductor wafer and adhesive film in chip units. Dicing into Thereafter, in the pickup process, the chip is peeled off from the adhesive tape together with the adhesive film and picked up. In the mounting process, the chip is directly bonded to the lead frame, the package substrate or the like via the adhesive film. In this way, by using a dicing die bonding tape, it is possible to directly bond a chip with an adhesive film to a lead frame, a package substrate, or the like. The step of adhering can be omitted.
However, in the above dicing process, the semiconductor wafer and the adhesive layer are diced together using a dicing blade, resulting in a decrease in yield due to chipping of the semiconductor wafer and contamination due to cutting waste of the adhesive film.

In order to solve the above problem, Patent Document 1 discloses that a semiconductor wafer is not completely cut, but is cut to a predetermined depth along a line to be cut, and a surface protective tape is bonded to the semiconductor wafer. After the semiconductor wafer is divided by grinding until reaching a predetermined depth of cutting, the chip is divided by a so-called “first dicing method”, and then the divided wafer is bonded to a dicing die bonding film, and then the dicing die A method has been proposed in which a bonding film is cooled to make the adhesive layer brittle and then expanded to divide the adhesive layer in correspondence with individual chips. According to the method for dividing the adhesive layer using the tension at the time of expansion, the cutting waste of the adhesive is not generated, and there is no adverse effect.
In recent years, as a semiconductor wafer cutting method, a so-called “stealth dicing method” has been proposed in which a wafer can be cut in a non-contact manner using a laser processing apparatus. For example, in Patent Document 2, as a stealth dicing method, a semiconductor is bonded by focusing laser light on the inside of a semiconductor to which a sheet is attached with a die bond resin layer (adhesive layer) interposed therebetween. Forming a modified region by multiphoton absorption inside, forming a portion to be cut in this modified region, and expanding (expanding) while cooling the sheet, so that the semiconductor and adhesive along the portion to be cut A method of cutting a semiconductor substrate comprising a step of cutting a layer is disclosed.
As another method of cutting a semiconductor wafer using a laser processing apparatus, for example, Patent Document 3 discloses a process of mounting an adhesive film (adhesive layer) for die bonding on the back surface of a semiconductor wafer, A process of attaching an extensible protective adhesive tape to the adhesive film side of the semiconductor wafer on which the adhesive film is mounted, and irradiating a laser beam along the street from the surface of the semiconductor wafer to which the protective adhesive tape is attached. The process of dividing into semiconductor chips, the process of expanding and expanding the protective adhesive tape while cooling it to give tensile force to the adhesive film, and breaking the adhesive film for each semiconductor chip, and the tape loosening caused by the expansion And removing the semiconductor chip to which the broken adhesive film is attached from the protective adhesive tape. Step method of dividing a semiconductor wafer including a city has been proposed.

  However, in the cooling process as described above and the process of performing a large expansion, a large system that cools the sheet and a mechanism for expanding the sheet and a slack removal system by heat shrinkage are indispensable, and the manufacturing process is complicated. Both initial investment and running costs must be very high, and such a system is difficult to spread widely. In addition, the adhesive film breaking line at the time of expansion may partially deviate from the chip breaking line, and the adhesive film may be partially cut off at the end of the chip, resulting in a decrease in adhesion reliability. Problems can arise.

In a semiconductor wafer processing method using a dicing die bonding film, if the system can be simplified and energy-saving by eliminating the cooling mechanism, both initial investment and running costs can be significantly reduced. For this purpose, the adhesive layer of the dicing die bonding film must be easily cut at room temperature. Further, if the adhesive layer can be broken with a small elongation, it is not necessary to greatly expand the tape, and the heat shrinkage system can be omitted.
In order that the adhesive film of the dicing die bonding film can be easily divided at room temperature, it needs to be brittle with respect to the tensile stress in the plane direction at room temperature. On the other hand, if the adhesive film is excessively brittle with respect to the stress in the thickness direction, peeling occurs in the adhesive film layer. Therefore, the semiconductor chip is expanded at equal intervals and the semiconductor chip is mounted with the adhesive film having a predetermined thickness. Can't pick up. For example, Patent Document 4 describes a dicing die bonding film used for a semiconductor wafer processing method. However, the content of the inorganic filler contained in the adhesive sheet constituting the dicing die bonding film is large, and the adhesive layer cannot be broken unless it is broken at a large elongation rate.

JP 2005-57257 A JP 2004-273895 A JP 2002-334852 A International Publication No. 2004/109786

  The present invention provides a semiconductor wafer processing method that provides an adhesive film that has a sufficient cohesive force that does not cause peeling within a layer even when expanded at room temperature, and is very easy to tear in the planar direction. Let it be an issue.

  In view of the above problems, the present inventors have intensively studied. As a result, when an amorphous adhesive layer is formed using a composition containing a specific amount of a specific acrylic resin and an epoxy compound, the composition has sufficient cohesive strength to prevent peeling in the layer. It has been found that it has the property of being easily tearable in the plane direction. Furthermore, by dispersing the inorganic filler in such an amorphous solid, the stress of the amorphous solid is relaxed by the inorganic filler while further enhancing the cohesive force by utilizing the interaction between the inorganic filler surface and the organic matter. It has been found that it can be made easier to tear by limiting the sex. The present invention has been made based on these findings.

According to the present invention, the following means are provided.
(1) A resin composition comprising 9% by mass to 30% by mass of an epoxy compound, 10% by mass to 45% by mass of an acrylic copolymer, and 15% by mass or more of an inorganic filler,
The acrylic copolymer includes two or more structural units including at least one (meth) acrylic acid alkyl ester component as a structural unit,
Among the (meth) acrylic acid alkyl ester components, the carbon number of the alkyl group in the alkyl ester portion of at least one component is 3 or less,
In the B stage state, the glass transition temperature is 26 ° C. or more and 60 ° C. or less, the acrylic copolymer and the epoxy compound form a uniform phase, and the elongation at break is 3% or less.
Adhesive film.
(2) A dicing die bonding film obtained by laminating an adhesive tape and the adhesive film described in (1) above.
(3) The pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is formed from a resin composition containing 80% by mass or more of an acrylic copolymer, and the acrylic copolymer includes a (meth) acrylic acid alkyl ester component as a constituent unit, The dicing die bonding film according to (2), wherein the alkyl group in the alkyl ester portion of the (meth) acrylic acid alkyl ester component has 7 or more carbon atoms.
(4) A step of cutting the surface of the semiconductor wafer to a predetermined depth along a line to be cut and bonding a surface protection tape;
A step of cutting the back surface of the semiconductor wafer by grinding until reaching the predetermined depth cut in the step,
Bonding the divided semiconductor wafer and the dicing die bonding film described in the above (2) or (3) in a state where the semiconductor wafer is heated at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film. The process of
The step of dividing the dicing die bonding film along the dividing line by expanding the dicing die bonding film at a temperature lower than or equal to the glass transition temperature of the adhesive film, and the step of obtaining a semiconductor chip with an adhesive layer ,
A semiconductor component processing method including:
(5) The semiconductor wafer and the dicing die bonding film described in (2) or (3) are bonded together in a state where the semiconductor wafer is heated at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film. Process,
A step of forming a modified region along the planned dividing line by irradiating a laser beam inside the semiconductor wafer,
A step of dividing the adhesive film between the semiconductor wafer and the dicing die bonding film along a planned dividing line by expanding the dicing die bonding film at a temperature lower or room temperature than the glass transition temperature of the adhesive film, and a semiconductor with an adhesive layer Obtaining a chip,
A semiconductor component processing method including:
(6) The semiconductor wafer and the dicing die bonding film described in (2) or (3) are bonded together in a state where the semiconductor wafer is heated at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film. Process,
A step of dividing the semiconductor wafer along a planned division line by irradiating a laser beam;
A step of dividing the adhesive film of the dicing die bonding film along a dividing line by expanding the dicing die bonding film at a temperature lower than or lower than the glass transition temperature of the adhesive film, and a step of obtaining a semiconductor chip with an adhesive layer ,
A semiconductor component processing method including:
(7) A step of bonding the semiconductor wafer and the dicing die bonding film described in (2) or (3), a step of dividing the semiconductor wafer, and an expansion of the dicing die bonding film to form an adhesive film. Including the step of dividing,
In a state where the semiconductor wafer is heated at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film according to (2) or (3), the semiconductor wafer and the dicing die bonding film are bonded together,
A method for processing a semiconductor component, comprising: dividing the adhesive film by expanding the dicing die bonding film at a temperature lower or lower than a glass transition temperature of the adhesive film of the dicing die bonding film according to (2) or (3).

  According to the present invention, a relatively small expansion amount can be obtained at room temperature without using a large-scale cooling device while utilizing a method that is free from chipping of the wafer or contamination of the adhesive layer by cutting waste, such as the tip dicing method or the stealth dicing method. By dividing the adhesive film, the semiconductor component can be processed easily and with a high yield.

  The above and other features and advantages of the present invention will become more apparent from the following description, with reference where appropriate to the accompanying drawings.

It is sectional drawing which shows the adhesive film which concerns on embodiment of this invention. It is a top view of the dicing die-bonding film which concerns on one Embodiment of this invention. It is sectional drawing of the dicing die-bonding film which concerns on one Embodiment of this invention. It is the schematic for demonstrating typically a mode that the semiconductor wafer was bonded on the dicing die-bonding film of this invention. It is the schematic for demonstrating typically the dicing process or modified region formation process of a semiconductor wafer. It is the schematic for demonstrating typically the expansion process of an adhesive tape. It is the schematic for demonstrating the pick-up process of a semiconductor chip typically.

The adhesive film of the present invention comprises a resin composition comprising 9% by mass to 30% by mass of an epoxy compound, 10% by mass to 45% by mass of an acrylic copolymer, and 15% by mass or more of an inorganic filler, The acrylic copolymer includes two or more structural units including at least one (meth) acrylic acid alkyl ester component as a structural unit, and at least one of the (meth) acrylic acid alkyl ester components. The number of carbon atoms of the alkyl group in the alkyl ester portion of the component is 3 or less, the glass transition temperature is 26 ° C. or more and 60 ° C. or less in the B stage state, and the acrylic copolymer and the epoxy compound exhibit a homogeneous phase. The elongation at break is 3% or less.
In the present invention, the “B stage state” means that the adhesive containing an epoxy compound is in a semi-cured state, and refers to a state in which 80% or more of the calorific value before curing is retained by DSC measurement.
Hereinafter, each component of the adhesive film of this embodiment is demonstrated in detail based on drawing. However, the present invention is not limited to this.

FIG. 1 is a cross-sectional view showing an adhesive film according to an embodiment of the present invention. As shown in FIG. 1, the adhesive film 1b of this invention has the structure by which the adhesive bond layer 11b was laminated | stacked on the peeling film 12b. In addition, it is the adhesive film of the structure which laminated | stacked the peeling film different from the peeling film 12b on the surface of the adhesive film 1b opposite to the surface in which the adhesive bond layer 11b is provided, and was wound by roll shape It may be. Further, the adhesive film of the present invention may be cut (precut) into a predetermined shape in advance according to the use process or apparatus.
The adhesive film 1b is attached to the back surface of the semiconductor chip via the adhesive layer 11b when picking up the divided semiconductor chip, and serves as an adhesive when fixing the semiconductor chips to each other or the semiconductor chip to the substrate or the lead frame. used.

The release film 12b is used for the purpose of improving the handleability of the adhesive layer 11b.
The material of the release film 12b is not particularly limited, and is a polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyphenyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutylene. Terephthalate film, polyurethane film, ethylene / vinyl acetate copolymer film, ionomer resin film, ethylene / (meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate film, A polyimide film, a fluororesin film, or the like is used. These crosslinked films are also used. Furthermore, these laminated films may be sufficient.
The surface tension of the release film 12b is preferably 40 mN / m or less, and more preferably 35 mN / m or less. Thus, the release film 12b having a low surface tension can be obtained by appropriately selecting the material, and can also be obtained by applying a silicone resin or the like to the surface of the film and performing a release treatment. The film thickness of the release film 12b is usually 5 μm or more, preferably 10 μm or more, particularly preferably 20 μm or more, usually 300 μm or less, preferably 200 μm or less, particularly preferably 150 μm or less, and usually 5 to 300 μm, preferably Is about 10 to 200 μm, particularly preferably about 20 to 150 μm.

  The adhesive layer 11b is a resin composition containing 9% by mass to 30% by mass of an epoxy compound, 10% by mass to 45% by mass of an acrylic copolymer, and 15% by mass or more of an inorganic filler. The resin composition is cured by heat or high energy rays.

There are no particular limitations on the epoxy compound having an epoxy group contained as a curable resin, for example, polyglycidyl ether compounds of mononuclear polyhydric phenol compounds such as hydroquinone, resorcin, pyrocatechol, and phloroglucinol; dihydroxynaphthalene, biphenol , Methylene bisphenol (bisphenol F), methylene bis (orthocresol), ethylidene bisphenol, isopropylidene bisphenol (bisphenol A), isopropylidene bis (orthocresol), tetrabromobisphenol A, 1,3-bis (4-hydroxycumylbenzene) ), 1,4-bis (4-hydroxycumylbenzene), 1,1,3-tris (4-hydroxyphenyl) butane, 1,1,2,2-tetra (4-hydroxyphenyl) ethane, thiobisphenol , Sulfobi Polyglycidyl ether compounds of polynuclear polyhydric phenol compounds such as phenol, oxybisphenol, phenol novolak, orthocresol novolak, ethylphenol novolak, butylphenol novolak, octylphenol novolak, resorcin novolak, terpene phenol; ethylene glycol, propylene glycol, butylene glycol, Polyglycidyl ethers of polyhydric alcohols such as hexanediol, polyglycol, thiodiglycol, glycerin, trimethylolpropane, pentaerythritol, sorbitol, bisphenol A-ethylene oxide adduct; maleic acid, fumaric acid, itaconic acid, succinic acid, Glutaric acid, suberic acid, adipic acid, azelaic acid, sebacic acid, dimer acid, Aliphatic, aromatic or alicyclic polybasic acids such as Meric acid, phthalic acid, isophthalic acid, terephthalic acid, trimellitic acid, trimesic acid, pyromellitic acid, tetrahydrophthalic acid, hexahydrophthalic acid, endomethylenetetrahydrophthalic acid Homopolymers or copolymers of glycidyl esters of acids and glycidyl methacrylate; epoxies with glycidylamino groups such as N, N-diglycidylaniline and bis (4- (N-methyl-N-glycidylamino) phenyl) methane Compound: vinylcyclohexene diepoxide, dicyclopentanediene diepoxide, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, 3,4-epoxy-6-methylcyclohexylmethyl-6-methylcyclohexanecarboxylate, Bis (3,4-epoxy-6-methyl Epoxidized hexyl methyl) cyclic olefin compounds such as adipate; epoxidized polybutadiene, epoxidized styrene - epoxidized conjugated diene polymer such as butadiene copolymer, heterocyclic compounds such as triglycidyl isocyanurate.
Further, as the epoxy compound, a chelate-modified epoxy resin partially or entirely chelate-modified may be used. The chelate-modified epoxy resin may be obtained by reacting a chelate component containing a metal oxide and / or metal hydroxide with an epoxy component having two or more epoxy groups in the molecule. As the metal oxide and metal hydroxide, magnesium oxide, calcium oxide, zinc oxide, titanium oxide, cadmium oxide, lead oxide, magnesium hydroxide, calcium hydroxide, phosphoric acid and the like are preferably used.

  In the resin composition, the epoxy compound is contained in an amount of 9% by mass or more (preferably 16% by mass or more) and 30% by mass or less (preferably 25% by mass or less). Or an epoxy compound is 9-30 mass%, Preferably it is contained 16-25 mass%. In addition, the epoxy compound hardens the adhesive by passing through the process of laminating semiconductor parts with adhesive after the dividing / pickup process, and then heating at 100 to 300 ° C. It is necessary to obtain a multi-stage laminate bonded to the substrate. The above-described multistage stacking of semiconductor components is a general method used for increasing the capacity of a semiconductor memory, for example. If the said epoxy compound is less than 9 mass%, adhesive reliability will be insufficient. If the epoxy compound exceeds 30% by mass, picking up becomes difficult and the yield deteriorates. The epoxy compound needs to be in a state in which an uncured component is sufficiently contained before being bonded to a semiconductor wafer, that is, a B-stage state. The B stage state can be confirmed by holding 80% or more of the calorific value before curing by DSC measurement.

  The acrylic copolymer used in the adhesive film of the present invention includes two or more structural units including at least one (meth) acrylic acid alkyl ester component as a structural unit, and the (meth) acrylic acid alkyl ester component Among them, the carbon number of the alkyl group in the alkyl ester portion of at least one component is 3 or less. By using such an acrylic copolymer, it is possible to achieve compatibility between the compatibility with the epoxy compound and the glass transition temperature of the adhesive film in the B stage state within a specific range. If an acrylic homopolymer is used instead of the acrylic copolymer, the crystallinity of the polymer becomes excessive and the adhesive force of the adhesive film is insufficient.

  In the (meth) acrylic acid alkyl ester component having 3 or less carbon atoms in the alkyl ester moiety, the alkyl group is an unsubstituted alkyl group. Further, the alkyl group preferably has 2 or less carbon atoms. Examples of such an alkyl group include a methyl group, an ethyl group, an n-propyl group, and an iso-propyl group. Among these, a methyl group and an ethyl group are preferable.

  (Meth) acrylic acid alkyl ester components having 3 or less carbon atoms in the alkyl ester moiety include methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, iso-propyl methacrylate, methyl acrylate, ethyl acrylate, n-propyl acrylate , Iso-propyl acrylate.

  In the acrylic copolymer, the copolymer component other than the (meth) acrylic acid alkyl ester component having 3 or less carbon atoms in the alkyl ester portion is not particularly limited, and the carbon number of the alkyl group in the alkyl ester portion. (Meth) acrylic acid alkyl ester, acrylonitrile, acrylamide, (meth) acrylic acid, (meth) acrylic acid hydroxyalkyl ester, styrene, a compound having a vinyl group, and the like.

  In the acrylic copolymer, a (meth) acrylic acid alkyl ester component having 3 or less carbon atoms in the alkyl ester portion and an alkyl (meth) acrylate having 3 or less carbon atoms in the alkyl ester portion. Although there is no restriction | limiting in particular in polymerization ratio (molar ratio) with copolymerization components other than an ester component, 3: 7 or more are preferable, 5: 5 or more are more preferable, 9: 1 or less are preferable, and 7: 3 or less are more. Preferably, 3: 7 to 9: 1 is preferable, and 5: 5 to 7: 3 is more preferable. If the polymerization ratio of the (meth) acrylic acid alkyl ester component having 3 or less carbon atoms in the alkyl ester moiety is too low, the acrylic copolymer and the epoxy component are likely to be in a phase-separated state at the B stage. . In the phase separation state, the tear energy is dispersed along the interphase interface and the fracture path becomes complicated, so that it is difficult to divide at room temperature. On the other hand, if the polymerization ratio of the (meth) acrylic acid alkyl ester component having 3 or less carbon atoms in the alkyl ester portion is too high, the copolymer has an excessively rigid structure. It becomes difficult to follow, and the adhesive strength is insufficient.

  In the resin composition, the acrylic copolymer is 10% by mass or more (preferably 20 or more, more preferably 25% by mass or more), 45% by mass or less (preferably 30% by mass or less, more preferably 27% by mass or less). )included. Alternatively, the acrylic copolymer is contained in an amount of 10 to 45% by mass, preferably 20 to 30% by mass, and more preferably 25 to 27% by mass. When the content of the acrylic copolymer is less than 10% by mass, the adhesive film has insufficient cohesive force, causing peeling within the adhesive layer, making it difficult to pick up the adhesive film from the adhesive tape with a predetermined thickness. become. On the other hand, when the content of the acrylic copolymer exceeds 45% by mass, the adhesive force of the adhesive film is insufficient.

  The resin composition used in the present invention contains 15% by mass or more of an inorganic filler in addition to the epoxy compound and the acrylic copolymer. As for content of an inorganic filler, 18 mass% or more is preferable, 20 mass% or more is more preferable, 75 mass% or less is preferable, 50 mass% or less is more preferable, 18-75 mass% is preferable, 20-50 mass% Is more preferable. When the content of the inorganic filler is less than 15% by mass, it becomes more difficult for the cutting line of the adhesive film to proceed straight along the cutting line of the semiconductor chip in the expanding step. If the cutting line of the adhesive film partially deviates from the cutting line of the semiconductor chip, a state where a part of the adhesive film is missing at the end of the chip occurs, resulting in a decrease in bonding reliability.

Although it does not prescribe | regulate especially as an inorganic filler, a thing which does not have magnetism and is thermally stable is preferable. Specific examples include silica and alumina.
In the adhesive film of the present invention, it is preferable that the inorganic filler is dispersed as uniformly as possible. By subjecting the inorganic filler to a surface treatment with a silane coupling agent, a fatty acid, an isocyanate compound, etc., the inorganic filler can be easily dispersed. Also good.

  The resin composition used in the present invention may contain components other than the epoxy compound, the acrylic copolymer, and the inorganic filler. Examples of such other components include silicone resins, phenol resins, thermosetting polyimide resins, polyurethane resins, melamine resins, urea resins, etc., and curable resins such as mixtures or modified products thereof; phenol resins (for example, phenols) Curing of novolak resin, o-cresol novolak resin, p-cresol novolak resin, t-butylphenol novolak resin, dicyclopentadiene cresol resin, polyparavinylphenol resin, bisphenol A type novolak resin), thermally activated latent epoxy resin, etc. Agents: Polymethyl methacrylate, polymethyl acrylate, polyethyl methacrylate, polyethyl acrylate, polypropyl methacrylate, polypropyl acrylate, polybutyl methacrylate, polybutyl acrylate, polyolefin, etc. Curers, such as tertiary amines, imidazoles, and quaternary ammonium salts; organic acids and anhydrides, dicyandiamide, Lewis acids / bases, curing agents, molecular sieves, triphenyl Examples include phosphine compounds.

  The glass transition temperature of the adhesive film of this invention is 26 degreeC or more and 60 degrees C or less, or 26 to 60 degreeC. In the present invention, the glass transition temperature is preferably 28 ° C. or higher, more preferably 29 ° C. or higher, preferably 32 ° C. or lower, more preferably 31 ° C. or lower, preferably 28 ° C. to 32 ° C., more preferably 29 ° C. to 31 ° C. . When the glass transition temperature is lower than 26 ° C., the adhesive film has too low viscosity, and it becomes difficult to divide the adhesive film in the expanding step of the adhesive tape of the dicing die bonding film described later. On the other hand, when the glass transition temperature exceeds 60 ° C., the adhesive film becomes too viscous, and is bonded to a semiconductor wafer at a temperature range of 60 ° C. to 80 ° C., which is a bonding temperature of a general dicing die bonding film. It becomes difficult. However, when heating and bonding of a dicing die bonding film at a temperature exceeding 80 ° C., a pressure-sensitive adhesive tape using a general polyolefin resin as a base material cannot withstand that temperature, and the pressure-sensitive adhesive tape expands and becomes wrinkled. It becomes a cause of bonding failure.

In the present invention, the glass transition temperature of the adhesive film is 2 mm in thickness from −30 ° C. to + 80 ° C. under the condition of a temperature rising rate of 5 ° C./min under liquid nitrogen using an ARES dynamic viscoelasticity measuring device. The temperature of the laminated adhesive film is raised, the loss tangent (tan δ) is measured at a measurement frequency of 1 Hz, and the temperature at which the maximum value of the measured loss tangent value appears is the glass transition temperature.
In general, when a strain ε is periodically applied to the adhesive film, if the adhesive film is a perfect elastic body, the stress σ corresponding thereto appears in the same phase with no time delay. However, when a viscous element is present in the adhesive film, a response is delayed (distortion input and response phase difference δ). The strain ε and stress σ having a time delay are expressed as complex elastic modulus (E *) by the following equation (1).

E * = σ / ε
E * = E ′ + iE ″ (1)

The loss tangent (tan δ) is expressed by the following formula (2).

tanδ = E ″ / E ′ (2)

Here, E ′ represents a storage elastic modulus, and E ″ represents a loss elastic modulus. The storage elastic modulus E ′ indicates an elastic property, and the loss elastic modulus E ″ and the loss tangent (tan δ) indicate viscosity, that is, an energy loss property.
Thus, the loss tangent (tan δ) represented by the ratio (E ″ / E ′) of the loss elastic modulus E ″ corresponding to the viscosity and the storage elastic modulus E ′ corresponding to the elasticity reflects the vibration absorption. . The larger the value, the higher the viscosity of the adhesive film (softer) and the higher the vibration absorption. Conversely, the smaller the value, the lower the viscosity of the adhesive film (harder) and the lower the vibration absorption.

In the adhesive film of the present invention, the resin composition containing the epoxy compound and the acrylic copolymer forms a uniform phase in the B stage (a state in which 80% or more of the calorific value before curing is retained by DSC measurement). To do. The term “homogeneous phase” as used herein refers to a state in which light of 300 nm is transmitted by 90% or more, or a state having only one loss tangent peak at −30 ° C. to 80 ° C. When the epoxy compound and the acrylic copolymer form a phase-separated state, that is, when there are two or more loss tangent peaks, in the expanding step of the adhesive tape of the dicing die bonding film described later, the adhesive film dividing path However, since it becomes complicated along the interface between the epoxy compound phase and the acrylic copolymer phase, the energy required for the division becomes large, which causes a division failure.
In order to evaluate whether the epoxy compound and the acrylic copolymer form a homogeneous phase, the temperature is increased at a rate of 5 ° C./min under liquid nitrogen using an ARES dynamic viscoelasticity measuring device. The temperature of the adhesive film laminated at a thickness of 2 mm from −30 ° C. to + 80 ° C. under the above conditions can be increased, and the loss tangent (tan δ) can be measured at a measurement frequency of 1 Hz.

  In the adhesive film of the present invention, the elongation at break is 3% or less. In the present invention, the elongation at break is more preferably 1% or less. In this specification, the elongation at break of the adhesive film is measured in accordance with JIS K 6251, a dumbbell for tensile test (JIS K 6251 No. 1 type) is prepared, and a tensile tester is used at a speed of 300 mm / min. A tensile test is performed and the elongation at break is measured.

As a method of cutting a semiconductor wafer, a step of processing a groove to be a crease without completely cutting the semiconductor wafer, a step of forming a modified region by irradiating a laser beam inside a semiconductor wafer on a cutting scheduled line, etc. There is known a method of cutting a semiconductor wafer by applying a step that makes it easy to cut the semiconductor wafer and then applying an external force. A method of processing a groove to be a crease is called half-cut dicing, and a method of forming a modified region by irradiating a laser beam inside a semiconductor wafer on a line to be cut is called stealth dicing (for example, JP-A-2002-192370). JP 2003-338467 A). These methods have an effect of reducing defects such as chipping particularly when the wafer is thin, and a yield improvement effect can be expected because a kerf width is not required. Further, without completely cutting the semiconductor wafer, the semiconductor wafer is cut to a predetermined depth along the planned dividing line, and a surface protection tape is bonded, and the back surface of the semiconductor wafer is ground until the predetermined depth is reached. There is also known a method in which a semiconductor wafer is divided and a chip is divided by a so-called “first dicing method”, and then the divided wafer is bonded to a dicing die bonding film.
The adhesive film of the present invention is suitably used for such half-cut dicing, stealth dicing, and tip dicing.

  The dicing die bonding film of the present invention has a configuration in which an adhesive tape and the adhesive film of the present invention are laminated. There is no particular restriction on the adhesive tape, it has sufficient adhesive strength so that it does not peel when dicing a semiconductor wafer, and low adhesive strength so that it can be easily peeled off from an adhesive film when picking up a semiconductor chip after dicing As long as it shows. For example, what provided the adhesive layer on the base film can be used conveniently. Further, in the dicing die bonding, as shown in FIGS. 2 and 3, the adhesive film 1b and the adhesive tape 1a may be laminated on the release film 1c. Moreover, the form cut | disconnected (pre-cut) in the predetermined shape previously, and the form which wound up the long film in which this was formed in multiple numbers in roll shape may be sufficient.

  There is no restriction | limiting in particular in the base film of an adhesive tape, Polyolefin resin, polyester resin, and other various plastics can be shape | molded and used for a film form. Although there is no restriction | limiting in particular in the thickness of a base film, 50 micrometers or more are preferable, 200 micrometers or less are preferable, and 50-200 micrometers is preferable.

  The resin used for the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is not particularly limited, and it is possible to use chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin, etc. that are usually used for pressure-sensitive adhesive. it can. In the present invention, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape has an acrylic copolymer of 80% or more (85% or more is preferable, 90% or more is more preferable, 99% or less is preferable, 95% or less is more preferable, and 85 to 99. %, Preferably 90 to 95%), and the acrylic copolymer contains a (meth) acrylic acid alkyl ester component as a constituent unit, and the (meth) acrylic acid alkyl ester component It is preferable from the viewpoint of pick-up property of the semiconductor chip that the alkyl group in the alkyl ester moiety has 7 or more carbon atoms.

  In the (meth) acrylic acid alkyl ester component in which the alkyl group in the alkyl ester moiety has 7 or more carbon atoms, the alkyl group may be a substituted alkyl group or an unsubstituted alkyl group, and may be a linear, branched or cyclic alkyl group. Either is acceptable. 8 or more are preferable, 9 or more are more preferable, 18 or less are preferable, 12 or less are more preferable, 8-18 are preferable, and 9-12 are more preferable. Examples of such an alkyl group include a heptyl group, an isooctyl group, an isononyl group, a normal nonyl group, a lauryl group, an isostearyl group, and a normal stearyl group. Among these, an isononyl group and a lauryl group are preferable.

  (Meth) acrylic acid alkyl ester component having 7 or more carbon atoms in the alkyl ester moiety includes heptyl acrylate, isooctyl acrylate, octyl methacrylate, isononyl acrylate, normal nonyl acrylate, lauryl acrylate, acrylic Examples include isostearyl acid and stearyl acrylate.

  In the acrylic copolymer, the copolymer component other than the (meth) acrylic acid alkyl ester component in which the alkyl group in the alkyl ester moiety has 7 or more carbon atoms is not particularly limited, and the carbon number of the alkyl group in the alkyl ester moiety. And (meth) acrylic acid alkyl ester component, acrylonitrile, acrylamide, (meth) acrylic acid, (meth) acrylic acid hydroxyalkyl ester, styrene, compounds having a vinyl group, and the like. Of these, (meth) acrylic acid and (meth) acrylic acid hydroxyalkyl ester are preferred.

  In the acrylic copolymer, a (meth) acrylic acid alkyl ester component having 7 or more alkyl groups in the alkyl ester moiety and an alkyl (meth) acrylate having 7 or more alkyl groups in the alkyl ester moiety. Although there is no restriction | limiting in particular in polymerization ratio with copolymerization components other than an ester component, 6: 4 or more are preferable, 7: 3 or more are more preferable, 9: 1 or less are preferable, 8: 2 or less are more preferable, 6: 4-9: 1 are preferable and 7: 3-8: 2 are more preferable. When the polymerization ratio of the (meth) acrylic acid alkyl ester component having 7 or more carbon atoms in the alkyl ester portion is too high, it becomes difficult to introduce a reactive group that serves as a starting point for crosslinking between polymers. It becomes difficult to form a stable pressure-sensitive adhesive layer. On the other hand, if the polymerization ratio of the (meth) acrylic acid alkyl ester component having 7 or more carbon atoms in the alkyl ester portion is too low, pick-up becomes difficult and yield deteriorates.

It is preferable to prepare a pressure-sensitive adhesive by appropriately blending a radiation polymerizable compound, a photopolymerization initiator, a curing agent and the like into the resin composition for the pressure-sensitive adhesive layer.
By mixing a radiation polymerizable compound in the resin composition and irradiating the adhesive tape with radiation to cure, the adhesive tape can be easily peeled from the adhesive film. As the radiation polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation is used. Specific examples include various (meth) acrylic acid ester monomers and oligomers, (meth) acryloyl isocyanate, vinyl monomers, and the like.
When using a photopolymerization initiator, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenylpropane Etc. can be used.

In the composition forming the pressure-sensitive adhesive layer used in the present invention, a modifier such as a tackifier, a tackifier, a surfactant, or the like can be blended as necessary. Moreover, you may add an inorganic compound filler suitably.
The thickness of the pressure-sensitive adhesive layer is not particularly limited and may be appropriately set, but is preferably 5 μm or more, preferably 30 μm or less, and preferably 5 to 30 μm.

  The semiconductor component processing method of the present invention includes a step of bonding a semiconductor wafer and a dicing die bonding film of the present invention, a step of dividing the semiconductor wafer, and an adhesive film by dividing the dicing die bonding film. Including a step, higher than the glass transition temperature of the adhesive film of the dicing die bonding film of the present invention (preferably 70 ° C. or higher, more preferably 80 ° C. or higher, preferably 100 ° C. or lower, more preferably 90 ° C. or lower, preferably 70 The semiconductor wafer and the dicing die bonding film are bonded in a state where the semiconductor wafer is heated at a temperature of 100 ° C. to 100 ° C., more preferably 80 ° C. to 90 ° C., and the adhesive film of the dicing die bonding film of the present invention Lower than glass transition temperature or room (Preferably 10 ° C. or higher, more preferably 20 ° C. or higher, preferably 40 ° C. or lower, more preferably 30 ° C. or lower, preferably 10 ° C. to 40 ° C., more preferably 20 ° C. to 30 ° C. In this environment, there is no need for special temperature control.), And the dicing die bonding film is expanded to divide the adhesive film.

The semiconductor component processing method of the present invention will be described based on a preferred embodiment. However, the present invention is not limited to this.
The dicing die bonding film of the present invention can be preferably used for the above-mentioned dicing method. Specifically, as one embodiment of the semiconductor component processing method of the present invention, the step of cutting the surface of the semiconductor wafer to a predetermined depth along the line to be cut and bonding the surface protection tape, the back surface of the semiconductor wafer is The step of cutting by grinding until reaching the predetermined depth cut in the step, the divided semiconductor wafer and the dicing die bonding film of the present invention, the glass transition of the adhesive film of the dicing die bonding film The step of laminating the semiconductor wafer at a temperature higher than the temperature, and expanding the dicing die bonding film at a temperature lower than the glass transition temperature of the adhesive film or at room temperature, thereby dividing the adhesive film of the dicing die bonding film into a dividing line. The process of dividing along the semiconductor chip with adhesive layer That step, and a semiconductor component processing method comprising.

  Another preferred embodiment of the semiconductor component processing method of the present invention will be described with reference to FIGS. However, the present invention is not limited to this.

FIG. 4 is a schematic view for schematically explaining a state in which a semiconductor wafer is bonded onto the dicing die bonding film of the present invention.
In FIG. 4, a semiconductor wafer 2 and a ring frame 3 are bonded to a dicing die bonding film 1. First, as shown in FIG. 4, the adhesive tape 1 a of the dicing die bonding film 1 is attached to the ring frame 3, and the semiconductor wafer 2 is attached to the adhesive film 1 b of the dicing die bonding film 1. There is no restriction | limiting in these sticking orders, After bonding the semiconductor wafer 2 to the adhesive film 1b, you may bond the adhesive tape 1a and the ring frame 3 together. Moreover, you may perform bonding of the adhesive tape 1a and the ring frame 3, and bonding of the semiconductor wafer 2 and the adhesive film 1b simultaneously.
In FIG. 4, when the semiconductor wafer 2 and the dicing die bonding film 1 of the present invention are bonded together, the glass transition temperature of the adhesive film 1b of the dicing die bonding film 1 is higher (preferably 70 ° C. or higher, more preferably). Is 80 ° C. or higher, preferably 100 ° C. or lower, more preferably 90 ° C. or lower, preferably 70 to 100 ° C., more preferably 80 to 90 ° C.).

FIG. 5 is a schematic diagram for schematically explaining a semiconductor wafer dicing step or a modified region forming step.
The laser beam 10 is irradiated to the parting planned line 2a of the semiconductor wafer 2 to which the dicing die bonding film 1 is attached, and the semiconductor wafer 2 is separated into individual semiconductor chips 11. Instead of irradiating the laser beam 10, a semiconductor chip may be divided into pieces using a dicing blade or the like.
Alternatively, the modified region may be formed by irradiating the laser beam 10 to the division line 2a of the semiconductor wafer 2 to which the dicing die bonding film 1 is attached.

FIG. 6 is a schematic view for schematically explaining the expanding process of the adhesive tape.
As shown in FIG. 6, the dicing semiconductor chip 11 or the semiconductor wafer 10 in which the modified region is formed, and the adhesive tape 1a holding the adhesive film 1b are stretched in the circumferential direction of the ring frame 3, and the glass transition of the adhesive film 1b is performed. Lower temperature or room temperature (preferably 10 ° C. or higher, more preferably 20 ° C. or higher, preferably 40 ° C. or lower, more preferably 30 ° C. or lower, preferably 10 ° C. to 40 ° C., more preferably 20 ° C. to 30 ° C., Under normal circumstances where people are active, there is no need for special temperature control. Specifically, the push-up member 4 from the lower surface side of the pressure-sensitive adhesive tape 1a with respect to the pressure-sensitive adhesive tape 1a in a state where the plurality of diced semiconductor chips 11 or the semiconductor wafer 10 formed with the modified region and the adhesive film 1b are held. And the adhesive tape 1a is stretched in the circumferential direction of the ring frame 3. When the modified region is formed, the semiconductor wafer is separated into pieces along the dividing line by the expanding process, and the semiconductor chip 11 is obtained. In addition, the expanding step divides the adhesive film 1b along the dividing line, and the semiconductor chips 11 spread in the circumferential direction of the ring frame 3 at regular intervals, improving the recognition of the semiconductor chip 11 by a CCD camera or the like, It is possible to prevent re-adhesion between the semiconductor chips that occur when the adjacent semiconductor chips 11 come into contact with each other during pickup.

FIG. 7 is a schematic diagram for schematically explaining a semiconductor chip pickup process.
After performing the expanding process, as shown in FIG. 7, the picking-up process of picking up the semiconductor chip 11 is performed with the adhesive tape 1a expanded. Specifically, the semiconductor chip 11 is pushed up from the lower surface side of the adhesive tape 1a by the pins 5 and the semiconductor chip 11 is adsorbed by the suction collet 6 from the upper surface side of the adhesive tape 1a, thereby separating the semiconductor chip. 11 is picked up together with the adhesive film 1b.

  As described above, the die bonding step can be performed using the semiconductor chip 11 obtained by the method of the present invention. Specifically, the semiconductor chip 11 can be bonded to another semiconductor component, a lead frame, a package substrate, or the like by the adhesive film 1b picked up together with the semiconductor chip 11 in the pickup process.

  EXAMPLES Hereinafter, although this invention is demonstrated further in detail based on an Example, this invention is not limited to these.

(1) Preparation of adhesive film <Adhesive film 1>
Copolymer of ethyl acrylate, butyl acrylate and styrene (polymerization ratio: ethyl acrylate / butyl acrylate / styrene = 3/1/6, weight average molecular weight: 100,000), 45% by mass, bisphenol F type epoxy (trade name RE303, Nippon Kayaku) 16% by mass (made by Yakuhin), 18% by mass of phenol novolac resin (product name: HF-1, manufactured by Meiwa Kasei Co., Ltd.), 1% by mass of phenylimidazole (product name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.), and silica filler (product) (Name: C1, manufactured by Admattex) 20% by mass of slurry 1 obtained by dispersing 20% by mass in a mixed solvent of methyl ethyl ketone / toluene was kneaded, applied onto a release-treated PET film, and dried at 120 ° C. for 3 minutes. Thus, an adhesive film 1 having an adhesive layer thickness of 10 μm and a B-stage state was obtained.

<Adhesive film 2>
Copolymer of propyl methacrylate, acrylonitrile and glycidyl methacrylate (polymerization ratio: propyl methacrylate / acrylonitrile / glycidyl methacrylate = 3.5 / 6 / 0.5, weight average molecular weight: 400,000) 26% by mass, bisphenol A type epoxy (trade name) : RE-310, manufactured by Nippon Kayaku Co., Ltd.) 25% by mass, phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.) 28% by mass, phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) 1 mass %, And silica filler (trade name: C1, manufactured by Admattex) 20% by mass was dispersed in a methyl ethyl ketone / toluene mixed solvent, kneaded slurry 2, and applied onto a release-treated PET film. , Dried at 120 ° C. for 3 minutes, the adhesive layer thickness is 10 μm, B-stage It was obtained of the adhesive film 2.

<Adhesive film 3>
Copolymer of methyl acrylate, styrene and methacrylic acid (polymerization ratio: methyl acrylate / styrene / methacrylic acid = 3.5 / 6 / 0.5, weight average molecular weight: 400,000) 45% by mass, bisphenol A type epoxy (trade name) : RE-310, manufactured by Nippon Kayaku Co., Ltd.) 19% by mass, phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.) 20% by mass, phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) 1 mass % And silica filler (trade name: C1, manufactured by Admatex) 15% by mass in a methyl ethyl ketone / toluene mixed solvent was kneaded and coated on a release-treated PET film. And dried at 120 ° C. for 3 minutes to obtain an adhesive film 3 having an adhesive layer thickness of 10 μm and a B-stage state.

<Adhesive film 4>
Copolymer of methyl acrylate, styrene and methacrylic acid (polymerization ratio: methyl acrylate / styrene / methacrylic acid = 6.5 / 3 / 0.5, weight average molecular weight: 400,000) 10% by mass, bisphenol A type epoxy (trade name) : RE-310, manufactured by Nippon Kayaku Co., Ltd.) 19% by mass, phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.) 20% by mass, phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) 1 mass % And silica filler (trade name: C1, manufactured by Admattex Co., Ltd.) 50% by mass was dispersed in a methyl ethyl ketone / toluene mixed solvent, and kneaded slurry 4 was applied onto a release-treated PET film. The film was dried at 120 ° C. for 3 minutes to obtain an adhesive film 4 having a B-stage state with an adhesive layer thickness of 10 μm.

<Adhesive film 5>
Copolymer of ethyl acrylate, butyl acrylate and styrene (polymerization ratio: ethyl acrylate / butyl acrylate / styrene = 3/6, weight average molecular weight: 100,000), 10% by mass, bisphenol A type epoxy (trade name: RE-310 9% by mass, manufactured by Nippon Kayaku Co., Ltd., 10% by mass of phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.), 1% by mass of phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.), and silica Slurry 5 obtained by dispersing 70% by mass of a filler (trade name: C1, manufactured by Admatex) in a methyl ethyl ketone / toluene mixed solvent was kneaded and coated on a release-treated PET film at 120 ° C. It was dried for 3 minutes to obtain an adhesive film 5 in a B-stage state with an adhesive layer thickness of 10 μm.

<Adhesive film 6>
Copolymer of ethyl acrylate, butyl acrylate and styrene (polymerization ratio: ethyl acrylate / butyl acrylate / styrene = 3/1/6, weight average molecular weight: 100,000), 21% by mass, biphenyl aralkyl type epoxy (trade name: NC-3000) , Manufactured by Nippon Kayaku Co., Ltd.) 30% by mass, phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.) 30% by mass, phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) 1% by mass, and silica Slurry 6 obtained by dispersing 18% by mass of a filler (trade name: C1, manufactured by Admatex) in a methyl ethyl ketone / toluene mixed solvent was kneaded and applied onto a release-treated PET film at 120 ° C. It was dried for 3 minutes to obtain an adhesive film 6 in a B stage state with an adhesive layer thickness of 10 μm.

<Adhesive film 7>
Copolymer of butyl acrylate, acrylonitrile and methacrylic acid (polymerization ratio: butyl acrylate / acrylonitrile / methacrylic acid = 4 / 5.5 / 0.5, weight average molecular weight: 400000) 60% by mass, biphenyl aralkyl type epoxy (trade name) : NC-3000, manufactured by Nippon Kayaku Co., Ltd.) 9% by mass, phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.) 10% by mass, phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) 1 mass %, And silica filler (trade name: C1, manufactured by Admatex) 20% by mass was dispersed in a methyl ethyl ketone / toluene mixed solvent, and kneaded slurry 7 was applied onto a release-treated PET film. The film was dried at 120 ° C. for 3 minutes to obtain a B-staged adhesive film 7 having an adhesive layer thickness of 10 μm.

<Adhesive film 8>
Copolymer of propyl methacrylate, acrylonitrile and glycidyl methacrylate (polymerization ratio: propyl methacrylate / acrylonitrile / glycidyl methacrylate = 3.5 / 6 / 0.5, weight average molecular weight: 400,000) 50% by mass, bisphenol A type epoxy (trade name) : RE-310, manufactured by Nippon Kayaku Co., Ltd.) 14% by mass, phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.) 15% by mass, phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) 1 mass %, And silica filler (trade name: C1, manufactured by Admatex) 20% by mass was dispersed in a methyl ethyl ketone / toluene mixed solvent and kneaded slurry 8 and coated on a release-treated PET film. , Dried at 120 ° C. for 3 minutes, the adhesive layer thickness is 10 μm, B-stage To obtain an adhesive film 8.

<Adhesive film 9>
Copolymer of stearyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid (polymerization ratio: stearyl acrylate / 2-hydroxyethyl acrylate / methacrylic acid = 9 / 0.5 / 0.5, weight average molecular weight: 1,000,000 ) 26 mass%, bisphenol A type epoxy (trade name: RE-310, manufactured by Nippon Kayaku Co., Ltd.) 26 mass%, phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.) 27 mass%, phenylimidazole ( A slurry 9 obtained by dispersing 1 mass% of a product name: 2PZ, manufactured by Shikoku Kasei Co., Ltd., and 20 mass% of a silica filler (trade name: C1, manufactured by Admattex) in a methyl ethyl ketone / toluene mixed solvent is kneaded. , Coated on the release-treated PET film, dried at 120 ° C. for 3 minutes, the thickness of the adhesive layer was 10 μm, To obtain an adhesive film 9 of the stage state.

<Adhesive film 10>
Copolymer of stearyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid (polymerization ratio: stearyl acrylate / 2-hydroxyethyl acrylate / methacrylic acid = 9 / 0.5 / 0.5, weight average molecular weight: 1,000,000 ) 45 mass%, bisphenol A type epoxy (trade name: RE-310, manufactured by Nippon Kayaku Co., Ltd.) 16 mass%, phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.) 18 mass%, phenylimidazole ( The slurry 10 obtained by dispersing 1 mass% of a product name: 2PZ, manufactured by Shikoku Kasei Co., Ltd., and 20 mass% of a silica filler (trade name: C1, manufactured by Admattex) in a methyl ethyl ketone / toluene mixed solvent is kneaded. , Coated on the release-treated PET film, dried at 120 ° C. for 3 minutes, and the adhesive layer thickness was 10 μm To obtain an adhesive film 10 of the B-stage.

<Adhesive film 11>
Copolymer of methyl acrylate, styrene and methacrylic acid (polymerization ratio: methyl acrylate / styrene / methacrylic acid = 6.5 / 3 / 0.5, weight average molecular weight: 100,000) 44% by mass, bisphenol A type epoxy (trade name) : RE-310, manufactured by Nippon Kayaku Co., Ltd.) 22% by mass, phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.) 23% by mass, phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) 1 mass %, And 10% by mass of silica filler (trade name: C1, manufactured by Admattex Co., Ltd.) in a methyl ethyl ketone / toluene mixed solvent were kneaded and coated on a release-treated PET film. The film was dried at 120 ° C. for 3 minutes to obtain an adhesive film 11 in a B stage state with an adhesive layer thickness of 10 μm.

<Adhesive film 12>
Copolymer of methyl acrylate, styrene and methacrylic acid (polymerization ratio: methyl acrylate / styrene / methacrylic acid = 6.5 / 3 / 0.5, weight average molecular weight: 100000) 45% by mass, biphenyl aralkyl type epoxy (trade name : NC-3000, manufactured by Nippon Kayaku Co., Ltd.) 19% by mass, phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.) 20% by mass, phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.) 1 mass % And a silica filler (trade name: C1, manufactured by Admatex) 15% by mass of a slurry 12 obtained by dispersing in a methyl ethyl ketone / toluene mixed solvent, and coating on a release-treated PET film. And dried at 120 ° C. for 3 minutes to obtain an adhesive film 12 having an adhesive layer thickness of 10 μm and a B stage state.

<Adhesive film 13>
Copolymer of methyl acrylate and styrene (polymerization ratio: methyl acrylate / styrene / = 6.5 / 3.5, weight average molecular weight: 100000) 5% by mass, bisphenol A type epoxy (trade name: RE-310, Nippon Kayaku) 21% by mass (made by Yakuhin), 23% by mass of phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.), 1% by mass of phenylimidazole (trade name: 2PZ, manufactured by Shikoku Chemicals), and silica filler (product) (Name: C1, manufactured by Admatex Co., Ltd.) A slurry 13 obtained by dispersing a 50 mass% mixture in a methyl ethyl ketone / toluene mixed solvent was kneaded and applied onto a release-treated PET film. The film was dried for 5 minutes to obtain an adhesive film 13 having an adhesive layer thickness of 10 μm and a B stage state.

<Adhesive film 14>
Copolymer of ethyl acrylate, butyl acrylate and styrene (polymerization ratio: ethyl acrylate / butyl acrylate / styrene = 3/1/6, weight average molecular weight: 100,000), 13% by mass, bisphenol A type epoxy (trade name: RE-310 8% by mass, manufactured by Nippon Kayaku Co., Ltd., 8% by mass of phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.), 1% by mass of phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.), and silica A slurry 14 obtained by dispersing 70% by mass of a filler (trade name: C1, manufactured by Admattex) in a methyl ethyl ketone / toluene mixed solvent was kneaded and applied on a release-treated PET film at 120 ° C. It was dried for 3 minutes to obtain an adhesive film 14 having a B-stage state with an adhesive layer thickness of 10 μm.

<Adhesive film 15>
Copolymer of ethyl acrylate, butyl acrylate and styrene (polymerization ratio: ethyl acrylate / butyl acrylate / styrene = 3/1/6, weight average molecular weight: 100,000), 10% by mass, biphenyl aralkyl type epoxy (trade name: NC-3000) 33% by mass, manufactured by Nippon Kayaku Co., Ltd., 33% by mass of phenol novolac resin (trade name: HF-1, manufactured by Meiwa Kasei Co., Ltd.), 1% by mass of phenylimidazole (trade name: 2PZ, manufactured by Shikoku Kasei Co., Ltd.), and silica A slurry 15 obtained by dispersing 23% by mass of a filler (trade name: C1, manufactured by Admattex) in a methyl ethyl ketone / toluene mixed solvent was kneaded and applied onto a release-treated PET film at 120 ° C. The film was dried for 3 minutes to obtain an adhesive film 15 having an adhesive layer thickness of 10 μm and a B stage state.

(2) Measurement of glass transition temperature and confirmation of acrylic copolymer / epoxy compound compatibility The adhesive layers of the adhesive films 1 to 15 are laminated so as to have a thickness of 2 mm, respectively, and a dynamic viscoelasticity measuring device (product) Name: ARES, manufactured by TA Instruments), the temperature was raised from −30 ° C. to + 80 ° C. at a rate of temperature increase of 5 ° C./min under liquid nitrogen, and the loss tangent (tan δ) was measured at a measurement frequency of 1 Hz. It was measured.
The temperature at which the maximum value of the measured loss tangent value appears was defined as the glass transition temperature.
Furthermore, when the maximum value of the measured loss tangent value is one, it is evaluated that the acrylic copolymer and the epoxy compound form a uniform phase, and when the measured maximum value of the loss tangent value is two or more, acrylic It was evaluated that the copolymer and the epoxy compound were in a phase separated state.
The results are shown in Table 1.

(3) Measurement of elongation at break For adhesive films 1 to 15, a dumbbell for tensile test (JIS K 6251 No. 1 type) was prepared and 300 mm / mm by a tensile tester (trade name: Strograph V, manufactured by Toyo Seiki Co., Ltd.). A tensile test was performed at a rate of minutes to determine the elongation at break. The results are shown in Table 1.

(4) Measurement of adhesive strength Using a sample in which a 4 × 4 mm silicon chip is bonded to a copper lead frame with 4 × 4 mm adhesive films 1 to 15, the shear adhesive strength after heating at 350 ° C. for 20 seconds is a push-pull gauge. It was measured by. The results are shown in Table 1.

(5) Preparation of adhesive tape <Base film>
Melting resin beads of an ethylene-methacrylic acid copolymer (trade name: Ultrasen AN4214, manufactured by Mitsui DuPont Polychemical Co., Ltd.) at 140 ° C. and forming it into a long film having a thickness of 100 μm using an extruder. Thus, a base film was produced.

<Adhesive tape 1>
Copolymer of heptyl acrylate and 2-hydroxyethyl acrylate (polymerization ratio: heptyl acrylate / 2-hydroxyethyl acrylate = 9/1, weight average molecular weight: 400,000) Name: Coronate T (manufactured by Nippon Polyurethane Co., Ltd.) was added to a mixture of 9 parts by mass of ethyl acetate and dispersed in ethyl acetate so that the solid content was 30% by weight. After laminating to a thickness of 10 μm, the adhesive tape 1 was obtained by heating and drying at 77 ° C. for 2 minutes.

<Adhesive tape 2>
Instead of a copolymer of heptyl acrylate and 2-hydroxyethyl acrylate, a copolymer of hexyl methacrylate and 2-hydroxyethyl acrylate (polymerization ratio: heptyl acrylate / 2-hydroxyethyl acrylate = 8/2, weight) An adhesive tape 2 was prepared in the same manner as the adhesive tape 1 except that the average molecular weight was 500000).

<Adhesive tape 3>
Photopolymerizable curing with respect to 100 parts by mass of hexyl methacrylate and 2-hydroxyethyl acrylate (polymerization ratio: hexyl methacrylate / 2-hydroxyethyl acrylate = 8/2, weight average molecular weight: 500,000) 20 parts by mass of trimethylolpropane triacrylate (trade name: V295, manufactured by Osaka Organic Chemical Co., Ltd.), 2 parts by mass of TDI polyisocyanate (trade name: Coronate T, manufactured by Nippon Polyurethane Co., Ltd.), Irgacure as a photopolymerization initiator 184 (trade name, manufactured by Ciba Geigy Co., Ltd. Japan) Same as adhesive tape 1 except that 1 part by mass of the mixture was dispersed in ethyl acetate so that the solid content was 30% by weight and then laminated on the base film. An adhesive tape 3 was obtained.

<Adhesive tape 4>
Instead of a copolymer of heptyl acrylate and 2-hydroxyethyl acrylate, a copolymer of isooctyl acrylate and 2-hydroxyethyl acrylate (polymerization ratio: isooctyl acrylate / 2-hydroxyethyl acrylate = 6/4, weight average) Adhesive tape 4 was obtained in the same manner as adhesive tape 1 except that molecular weight: 600,000) was used.

(6) Preparation of dicing die bonding film <Dicing die bonding film 1>
The adhesive film 1 and the pressure-sensitive adhesive tape 1 are cut into circles having a diameter of 220 mm and 270 mm, respectively, and the adhesive layer of the adhesive film 1 and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape 1 are bonded together and peeled through the PET film of the adhesive film 1 It laminated | stacked on the film (Brand name: SP-PET, the Tosero make), and the dicing die-bonding film 1 of the shape shown to FIG. 2 and 3 was created.

<Dicing die bonding film 2>
A dicing die bonding film 2 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 2 and the adhesive tape 2 were used.

<Dicing die bonding film 3>
A dicing die bonding film 3 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 2 and the adhesive tape 3 were used.

<Dicing die bonding film 4>
A dicing die bonding film 4 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 2 and the adhesive tape 1 were used.

<Dicing die bonding film 5>
A dicing die bonding film 5 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 2 and the adhesive tape 4 were used.

<Dicing die bonding film 6>
A dicing die bonding film 6 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 3 and the adhesive tape 4 were used.

<Dicing die bonding film 7>
A dicing die bonding film 7 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 4 and the adhesive tape 1 were used.

<Dicing die bonding film 8>
A dicing die bonding film 8 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 5 and the adhesive tape 1 were used.

<Dicing die bonding film 9>
A dicing die bonding film 9 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 6 and the adhesive tape 1 were used.

<Dicing die bonding film 11>
A dicing die bonding film 11 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 7 and the adhesive tape 1 were used.

<Dicing die bonding film 12>
A dicing die bonding film 12 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 8 and the adhesive tape 1 were used.

<Dicing die bonding film 13>
A dicing die bonding film 13 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 9 and the adhesive tape 1 were used.

<Dicing die bonding film 14>
A dicing die bonding film 14 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 10 and the adhesive tape 1 were used.

<Dicing die bonding film 15>
A dicing die bonding film 15 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 11 and the adhesive tape 1 were used.

<Dicing die bonding film 16>
A dicing die bonding film 16 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 12 and the adhesive tape 4 were used.

<Dicing die bonding film 17>
A dicing die bonding film 17 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 13 and the adhesive tape 1 were used.

<Dicing die bonding film 18>
A dicing die bonding film 18 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 14 and the adhesive tape 1 were used.

<Dicing die bonding film 19>
A dicing die bonding film 19 was prepared in the same manner as the dicing die bonding film 1 except that the adhesive film 15 and the adhesive tape 1 were used.

(7) Processing of semiconductor wafer and creation of semiconductor chip Each of the steps shown below was performed, and the semiconductor wafer was processed using the dicing die bonding film to prepare a semiconductor chip.
(A) A step of bonding a surface protection tape (trade name: SP-594, manufactured by Furukawa Electric Co., Ltd.) to the surface of a semiconductor wafer (thickness: 50 μm, diameter: 200 mm) on which a circuit pattern is formed (b) Back grinding process for grinding back surface of semiconductor wafer (c) The PET film and the release film of the adhesive film are peeled from the dicing die bonding film, and the semiconductor wafer is heated to 80 ° C. as shown in FIG. Are bonded to the adhesive layer of the adhesive film and a ring frame for semiconductor wafer processing (trade name: MDTFR, manufactured by Disco Corporation) and the adhesive tape of the dicing die bonding film. A step of bonding via an adhesive layer at an exposed portion (d) from the surface of the semiconductor wafer to the surface Step (e) for peeling off the protective tape As shown in FIG. 5, a step of forming a modified region by multiphoton absorption inside the semiconductor wafer by irradiating the division line 2a of the semiconductor wafer with laser light (f) ) As shown in FIG. 6, the dicing die bonding film is expanded by using an expanding member (A in FIG. 6) at 5 to 10 mm, where the adhesive tape and the semiconductor wafer do not overlap at room temperature (25 ° C.) By pushing up from the adhesive tape side and expanding the adhesive tape and the adhesive film, the semiconductor wafer and the adhesive film are divided along the planned dividing line, and a plurality of semiconductor chips with the adhesive film (size: 10 mm × 10 mm × (G) Adhesive tape with the dicing die bonding film kept in the expanded state as shown in FIG. The process of picking up the semiconductor chip 6 with the adhesive film 11 with the suction collet 6 while pushing up from the surface with the pin 5

(8) Heat bonding The dicing die bonding film is transferred to the semiconductor wafer and processing ring frame while heating the semiconductor wafer to 80 ° C. using a bonding apparatus (trade name: precut tape mounter, manufactured by Omiya Kogyo Co., Ltd.): Bonding was performed at 10 mm / s. After the heat bonding, the surface on which the semiconductor wafer was bonded was faced down, and was observed visually from the back surface of the base film of the dicing die bonding film. A sample in which partial peeling occurred between the semiconductor wafer and dicing die bonding and air was infiltrated was determined to be a bonding failure, and a sample in which such air infiltration was not visually confirmed It was a success.
The results are shown in Tables 3 and 4.

(9) Cutting test of semiconductor wafer The periphery of each sample of the expanded sample was observed with a CCD camera at an extension amount of 5 mm, 7 mm or 10 mm, and cracks on the adhesive film due to the division were continuously observed on all four sides of the chip. The chip that was was determined as the chip that was successfully divided. Chips other than the above-mentioned successful chips, that is, cracks on the adhesive film due to splitting were discontinuous (that is, with the adhesive film partially connected) on any or all of the four sides of the chip, or A chip where no cracks on the adhesive film due to splitting were observed at any or all of the four sides of the chip was defined as a chipping failure chip.
The above test was performed three times for each sample at room temperature (25 ° C.), and the success rate of splitting was calculated.
(Average division success rate) (%) =
(Number of successful chips) / (Total number of chips on dicing die bonding film) × 100
The results are shown in Tables 3 and 4.

(10) Pickup success rate In the step (g), the semiconductor chip and the adhesive film are peeled off from the adhesive tape, but the semiconductor chip is not damaged and the adjacent chips do not adhere to each other, and the adhesion is 10 μm ± 1 μm. The rate at which the semiconductor chip could be picked up with the film attached was evaluated as the pick-up success rate. Number of trials: 100 chips The results are shown in Tables 3 and 4.

(11) Microscopic Observation of Semiconductor Chip Using an optical microscope, the surface of the picked-up semiconductor chip (10 samples each) on which the adhesive film was laminated was observed. In the above observation surface, a chip in which a portion of the semiconductor chip not covered with the adhesive film was regarded as a chip lacking the adhesive film, and a chip without such a chip was regarded as a successful chip. .
The results are shown in Tables 3 and 4.

When the adhesive film of the present invention is used in a method for processing a semiconductor wafer, the adhesive film has a sufficient cohesive force so that peeling does not occur in the adhesive layer even if it is expanded at room temperature. The shear adhesive strength was sufficient to ensure sufficient reliability. Therefore, as is clear from the above results, by using the dicing die bonding film of the present invention, a semiconductor chip with an adhesive film having a certain thickness can be efficiently obtained without performing a cooling step, Reliability is also obtained.
On the other hand, when the dicing die bonding films 11 to 14 of the comparative examples were used, when the expansion was performed at room temperature, the adhesive layer of the adhesive film could not be divided. In addition, when the dicing die bonding film 15 of the comparative example is used, when the expansion is performed at room temperature, the adhesive layer of the adhesive film can be divided, but an adhesive film having a certain thickness is attached to the semiconductor chip. Could not be combined. When the dicing die bonding film 16 of the comparative example is used, the dicing die bonding film and the semiconductor wafer cannot be bonded at 80 ° C., and bonding at a higher temperature is required. In addition, when the dicing die bonding film 17 of the comparative example is used, if the expansion is performed at room temperature, the adhesive layer of the adhesive film can be divided, but the separated semiconductor chip can be picked up. There wasn't. In addition, when the dicing die bonding film 18 of the comparative example was used, it was possible to divide the adhesive layer of the adhesive film and pick up individual semiconductor chips when expanded at room temperature, The adhesive strength of the adhesive film was very small, and it was not possible to ensure adhesion reliability. Further, when the dicing die bonding film 19 of the comparative example was used, it was possible to divide the adhesive layer of the adhesive film when expanded at room temperature, but the process of picking up the separated semiconductor chip The yield was very bad.

  While this invention has been described in conjunction with its embodiments, we do not intend to limit our invention in any detail of the description unless otherwise specified and are contrary to the spirit and scope of the invention as set forth in the appended claims. I think it should be interpreted widely.

  This application claims priority based on Japanese Patent Application No. 2011-147778 filed in Japan on July 1, 2011, which is incorporated herein by reference. Capture as part.

1: Dicing die bonding film 1a: Adhesive tape 1b: Adhesive film 11b: Adhesive layer 12b: Peeling film 1c: Peeling film 2: Semiconductor wafer 2a: Planned parting line 2b: Planned parting line 3: Ring frame 4: Pushing member 5: Pushing pin 6: Adsorption collet 10: Laser beam 11: Semiconductor chip A: Expansion amount

Claims (7)

The resin composition comprising 9% by mass or more and 30% by mass or less of an epoxy compound, 10% by mass or more and 45% by mass or less of an acrylic copolymer, and 15% by mass or more of an inorganic filler,
The acrylic copolymer includes two or more structural units including at least one (meth) acrylic acid alkyl ester component as a structural unit,
Among the (meth) acrylic acid alkyl ester components, the carbon number of the alkyl group in the alkyl ester portion of at least one component is 3 or less,
In the B stage state, the glass transition temperature is 26 ° C. or more and 60 ° C. or less, the acrylic copolymer and the epoxy compound form a uniform phase, and the elongation at break is 3% or less.
Adhesive film.   A dicing die bonding film in which an adhesive tape and the adhesive film according to claim 1 are laminated.   The pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is formed from a resin composition containing 80% by mass or more of an acrylic copolymer, and the acrylic copolymer includes a (meth) acrylic acid alkyl ester component as a constituent unit, The dicing die bonding film according to claim 2, wherein the alkyl group in the alkyl ester portion of the acrylic acid alkyl ester component has 7 or more carbon atoms. Cutting the surface of the semiconductor wafer to a predetermined depth along the line to be cut and bonding a surface protective tape;
A step of cutting the back surface of the semiconductor wafer by grinding until reaching the predetermined depth cut in the step,
The step of bonding the divided semiconductor wafer and the dicing die bonding film according to claim 2 or 3 while the semiconductor wafer is heated at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film,
The step of dividing the dicing die bonding film along the dividing line by expanding the dicing die bonding film at a temperature lower than or equal to the glass transition temperature of the adhesive film, and the step of obtaining a semiconductor chip with an adhesive layer ,
A semiconductor component processing method including: Bonding the semiconductor wafer and the dicing die bonding film according to claim 2 or 3 while the semiconductor wafer is heated at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film;
A step of forming a modified region along the planned dividing line by irradiating a laser beam inside the semiconductor wafer,
A step of dividing the adhesive film between the semiconductor wafer and the dicing die bonding film along a planned dividing line by expanding the dicing die bonding film at a temperature lower or room temperature than the glass transition temperature of the adhesive film, and a semiconductor with an adhesive layer Obtaining a chip,
A semiconductor component processing method including: Bonding the semiconductor wafer and the dicing die bonding film according to claim 2 or 3 while the semiconductor wafer is heated at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film;
A step of dividing the semiconductor wafer along a planned division line by irradiating a laser beam;
A step of dividing the adhesive film of the dicing die bonding film along a dividing line by expanding the dicing die bonding film at a temperature lower than or lower than the glass transition temperature of the adhesive film, and a step of obtaining a semiconductor chip with an adhesive layer ,
A semiconductor component processing method including: Including a step of bonding the semiconductor wafer and the dicing die bonding film according to claim 2, a step of dividing the semiconductor wafer, and a step of dividing the adhesive film by expanding the dicing die bonding film,
In a state where the semiconductor wafer is heated at a temperature higher than the glass transition temperature of the adhesive film of the dicing die bonding film according to claim 2 or 3, the semiconductor wafer and the dicing die bonding film are bonded together,
The semiconductor component processing method of dividing | segmenting the said adhesive film by expanding the said dicing die-bonding film at the low temperature or room temperature of the glass transition temperature of the adhesive film of the dicing die-bonding film of Claim 2 or 3.

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