JP2014060201A - Dicing-die bonding tape and manufacturing method of semiconductor chip with adhesive layer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing-die bonding tape which can improve a pickup property of a semiconductor chip with an adhesive layer.SOLUTION: A dicing-die bonding tape 1 according to the present embodiment comprises: an adhesive layer 3; a non-adhesive layer 4 which is laminated on one surface of the adhesive layer 3 and has non-adhesion; an intermediate film 6 laminated on the non-adhesion layer 4 on a surface opposite to the adhesive layer 3 side; and a dicing layer 5 laminated on the intermediate film 6 on a surface opposite to the non-adhesive layer 4 side. A peel force between the non-adhesive layer 4 and the intermediate film 6 is 1 N/25 mm and over.

Description

  The present invention relates to a dicing die bonding tape used for obtaining a semiconductor chip with an adhesive layer and used for die bonding of the semiconductor chip with an adhesive layer. Moreover, this invention relates to the manufacturing method of the semiconductor chip with an adhesive layer using this dicing die-bonding tape.

  When a semiconductor chip is cut out from a semiconductor wafer, a dicing method called a pre-dicing method is used. An example of the prior dicing method is disclosed in Patent Document 1 below, for example.

  In the tip dicing method, first, a cut is formed on the surface of a semiconductor wafer. Next, a protective sheet is affixed on the surface of the semiconductor wafer on which the cuts are formed. Thereafter, the back surface of the semiconductor wafer is ground to the notched portion to reduce the thickness of the semiconductor wafer and divide it into individual semiconductor chips. A protective sheet is attached to the surface of the divided semiconductor wafer divided into individual semiconductor chips.

  Further, in order to easily mount individual semiconductor chips obtained by the above-described dicing method on a substrate, a die bonding layer is often attached to the back surface of the semiconductor chip. In order to obtain this semiconductor chip with a die bonding layer, a dicing die bonding tape including a die bonding layer and a dicing layer is used.

  As an example of the dicing die bonding tape, Patent Document 2 below discloses a dicing die bonding tape in which an adhesive sheet and a base material (dicing tape) are laminated. The adhesive sheet in this dicing-die bonding tape is a die bonding layer, and is a sheet for laminating an adhesive layer on a semiconductor chip to obtain a semiconductor chip with an adhesive layer.

  Conventionally, a dicing die bonding tape is used to cut the semiconductor wafer together with the adhesive layer after the adhesive layer is attached to the semiconductor wafer.

  As an example of the dicing die bonding tape, the following Patent Document 3 includes a polyimide adhesive layer, a polyimide process film laminated on one surface of the polyimide adhesive layer, and the polyimide process film described above. A dicing die bonding tape having an expanding sheet laminated on the surface opposite to the polyimide adhesive layer side is disclosed. The expandable sheet has a soft film and a pressure-sensitive adhesive layer laminated on one surface of the soft film. The expand sheet is laminated on the surface of the polyimide process film from the pressure-sensitive adhesive layer side. The polyimide adhesive layer is used for die bonding of semiconductor chips.

JP 2006-245467 A JP 2005-260204 A JP-A-9-266183

  When a semiconductor chip with an adhesive layer is obtained using the dicing die bonding tape described in Patent Document 2, the dicing die bonding tape is attached to the semiconductor wafer after division from the adhesive sheet side. Next, the adhesive sheet is modified by irradiation with laser light, heating or cooling. Next, the adhesive sheet modified by stretching the dicing tape is stretched, the adhesive sheet is divided, cut along the cut portion of the semiconductor wafer, and the individual semiconductor chips are separated, and the individual semiconductor chips are separated. A cut adhesive layer is formed on the lower surface of the substrate. Thereafter, the semiconductor chip with an adhesive layer is peeled off from the substrate and taken out. The taken-out semiconductor chip with the adhesive layer is mounted on the substrate from the adhesive layer side.

  In the dicing die bonding tape described in Patent Document 2, the adhesive sheet modified by stretching the base material is stretched, and after the semiconductor wafer is cut, the semiconductor chip with the adhesive layer is peeled from the base material, When taking out, it may be difficult to satisfactorily pick up the semiconductor chip with the adhesive layer.

  Even in the dicing die bonding tape described in Patent Document 3, the semiconductor wafer is cut together with the adhesive layer, the expanding sheet is stretched, and the semiconductor chip with the adhesive layer is peeled from the polyimide process film, and taken out. It may be difficult to pick up a semiconductor chip with an adhesive layer well.

  In particular, after cutting a plurality of semiconductor wafers with a dicing blade for a long period of time, the dicing blade is worn out and the dicing blade is chipped or clogged due to adhesion of the dicing blade. It is difficult to cut. In the conventional dicing-die bonding tape, when a plurality of semiconductor wafers or adhesive layers are cut with a dicing blade that has been cut for a long period of time, the cut portion may not become a clean linear shape. In this case, in order to pick up the semiconductor chip with the adhesive layer after cutting, if the semiconductor chip with the adhesive layer is pushed up, cracks and floats occur, and the pick-up property of the semiconductor chip with the adhesive layer is likely to be considerably deteriorated. There's a problem.

  An object of the present invention is to provide a dicing die bonding tape capable of improving the pick-up property of a semiconductor chip with an adhesive layer, and a method for manufacturing a semiconductor chip with an adhesive layer using the dicing die bonding tape. Is to provide.

  A limited object of the present invention is to pick up a semiconductor chip with an adhesive layer even when a plurality of semiconductor wafers or adhesive layers are cut with a dicing blade that has been cut and worn for a long period of time. It is to provide a dicing-die bonding tape capable of enhancing the properties, and a method for producing a semiconductor chip with an adhesive layer using the dicing-die bonding tape.

  According to a wide aspect of the present invention, an adhesive layer, a non-adhesive layer laminated on one surface of the adhesive layer and having non-adhesiveness, and the adhesive contact of the non-adhesive layer An intermediate film laminated on a surface opposite to the adhesive layer side, and a dicing layer laminated on a surface opposite to the non-adhesive layer side of the intermediate film, the non-adhesive layer and the intermediate A dicing-die bonding tape having a peeling force with a film of 1 N / 25 mm or more is provided.

  On the specific situation with the dicing die-bonding tape which concerns on this invention, the breaking elongation of the said intermediate | middle film is larger than the breaking elongation of the said non-adhesion layer.

  On the specific situation with the dicing die-bonding tape which concerns on this invention, the breaking elongation of the said non-adhesion layer is less than 100%, and the breaking elongation of the said intermediate | middle film is 100% or more.

  In a specific aspect of the dicing die-bonding tape according to the present invention, the dicing layer includes a base material and an adhesive portion laminated on one surface of the base material, and the dicing layer is the adhesive portion. Laminated on the surface of the intermediate film from the side.

  On the specific situation with the dicing die-bonding tape which concerns on this invention, the surface at the side of the said non-adhesion layer side of the said intermediate film is surface-treated in order to improve adhesiveness.

  On the specific situation with the dicing die-bonding tape which concerns on this invention, the material of the said non-adhesion layer is the crosslinked body which bridge | crosslinked the composition containing an acrylic polymer.

  In a specific aspect of the dicing die bonding tape according to the present invention, the material of the intermediate film is a polyolefin resin or a polyester resin.

  According to a wide aspect of the present invention, the dicing-die bonding tape described above is used, and is laminated on one surface of the protective sheet and the protective sheet, and is divided into individual semiconductor chips. Using the laminate having a semiconductor wafer, the step of attaching the adhesive layer of the dicing die bonding tape to the divided semiconductor wafer of the laminate, and the protective sheet from the divided semiconductor wafer The step of peeling, the adhesive layer, the non-adhesive layer, and the intermediate film are stretched by stretching the dicing layer, and the adhesive layer is cut along the cut portion of the semiconductor wafer after the division And after separating the individual semiconductor chips in the divided semiconductor wafer, and after dicing, A method for producing a semiconductor chip with an adhesive layer, comprising: a step of peeling the adhesive layer to which a body chip is attached from the non-adhesive layer and taking out the semiconductor chip together with the adhesive layer. Is provided.

  In a specific aspect of the method for manufacturing a semiconductor chip with an adhesive layer according to the present invention, the method for manufacturing a semiconductor chip with an adhesive layer includes the semiconductor wafer on the surface of the semiconductor wafer. A step of forming a cut for dividing the semiconductor wafer, a step of attaching a protective sheet to the surface of the semiconductor wafer on which the cut is formed, a back surface of the semiconductor wafer on which the protective sheet is attached, and grinding the semiconductor And dividing the wafer into individual semiconductor chips to obtain the stacked body.

  According to a wide aspect of the present invention, using the dicing die bonding tape described above and a semiconductor wafer, the step of attaching the adhesive layer of the dicing die bonding tape to the semiconductor wafer; A step of dicing the semiconductor wafer and the adhesive layer, and after dicing, the adhesive layer to which the semiconductor chip is attached is peeled from the non-adhesive layer, and the semiconductor chip is bonded to the adhesive layer. The manufacturing method of the semiconductor chip with an adhesive layer provided with the process of taking out the whole agent layer is provided.

  The dicing die-bonding tape according to the present invention includes an adhesive layer, a non-adhesive layer laminated on one surface of the adhesive layer and having non-adhesive properties, and the above-mentioned viscosity of the non-adhesive layer. An intermediate film laminated on the surface opposite to the adhesive layer side, and a dicing layer laminated on the surface of the intermediate film opposite to the non-adhesive layer side, and further the non-adhesive Since the peeling force between the layer and the intermediate film is 1 N / 25 mm or more, the pickup property of the semiconductor chip with an adhesive layer can be improved.

1A and 1B are a partially cutaway plan view and a partially cutaway front sectional view schematically showing a dicing die bonding tape according to an embodiment of the present invention. FIGS. 2A and 2B are a partially cutaway plan view and a partially cutaway front sectional view schematically showing a modification of the dicing die bonding tape shown in FIG. FIGS. 3A to 3D are partial cutaway front cross-sectional views for explaining an example of each process for obtaining a laminated body used when manufacturing a semiconductor chip with an adhesive layer. 4A and 4B are partially cutaway front views for explaining an example of a method for manufacturing a semiconductor chip with an adhesive layer using a dicing die bonding tape according to an embodiment of the present invention. It is sectional drawing. 5 (a) and 5 (b) are partially cutaway front views for explaining an example of a method for manufacturing a semiconductor chip with an adhesive layer using a dicing die bonding tape according to an embodiment of the present invention. It is sectional drawing. FIG. 6A is a front sectional view showing a state when the dicing die bonding tape is attached to the dicing ring, and FIG. 6B is a view after the dicing die bonding tape is attached to the dicing ring. It is a top view which shows a state. FIGS. 7A and 7B are partially cutaway front views for explaining another method of manufacturing a semiconductor chip with an adhesive layer using a dicing die bonding tape according to an embodiment of the present invention. It is sectional drawing. FIG. 8 is a schematic cross-sectional view for explaining a peeling force evaluation method.

  Details of the present invention will be described below.

  The dicing die-bonding tape according to the present invention includes an adhesive layer, a non-adhesive layer laminated on one surface of the adhesive layer, and the adhesive layer side of the non-adhesive layer. Comprises an intermediate film laminated on the opposite surface, and a dicing layer laminated on the surface opposite to the non-adhesive layer side of the intermediate film. The non-adhesive layer has non-adhesiveness. The peeling force between the non-adhesive layer and the intermediate film is 1 N / 25 mm or more.

  By adopting the above-described configuration in the dicing die-bonding tape according to the present invention, the pick-up property of the semiconductor chip with an adhesive layer can be enhanced.

  For example, when a semiconductor chip with an adhesive layer is pushed up in order to pick up a semiconductor chip with an adhesive layer after cutting, peeling (floating) at the interface between the non-adhesive layer and the intermediate film is less likely to occur. Further, for example, dicing that does not include an intermediate film—in a die bonding tape, there is a tendency for peeling (floating) at the interface between the non-adhesive layer and the dicing layer, but dicing according to the present invention including the intermediate film— In the die bonding tape, it is possible to prevent this peeling (floating).

  In addition, after cutting a plurality of semiconductor chips continuously with a dicing blade for a long period of time, the dicing blade is worn out and the dicing blade is chipped or clogged due to adhesion of the dicing blade. May occur, making it difficult to cut. Even if the semiconductor wafer or the adhesive layer is cut by the dicing blade that has been cut and worn for a long time by adopting the above-described configuration in the dicing die bonding tape according to the present invention, the adhesive The pick-up property of the semiconductor chip with a layer can be improved.

  In addition, when a semiconductor chip with an adhesive layer is obtained by the prior dicing method, the above-described configuration of the dicing die bonding tape according to the present invention is used to stretch the dicing layer and When the non-adhesive layer and the intermediate film are stretched, the adhesive layer can be accurately cut along the cut portions of the divided semiconductor wafer. As a result, it becomes difficult for the cut fragments to adhere to the adhesive layer or the semiconductor chip. For this reason, the pick-up property of a semiconductor chip with an adhesive layer can be improved.

  Specifically, the adhesive layer is formed by stretching the dicing layer in a state where the adhesive layer, the non-adhesive layer, the intermediate film, and the dicing layer are laminated on one side of the divided semiconductor wafer. When the adhesive layer, the non-adhesive layer, and the intermediate film are stretched, the non-adhesive layer is not cut or broken, and the adhesive layer is cut along the cut portion of the semiconductor wafer after division. It becomes possible to cut only with high precision. In addition, when the adhesive layer, the non-adhesive layer, the intermediate film and the dicing layer laminated on one side of the divided semiconductor wafer are stretched, only the adhesive layer is cut off. Sometimes called.

  In the present invention, the adhesive layer may be modified by heating or cooling the adhesive layer, or by irradiating a laser beam. The adhesive layer can be accurately cut at room temperature. Even when the adhesive layer is not modified, the manufacturing efficiency of the semiconductor chip with the adhesive layer can be significantly increased. Furthermore, it is not necessary to prepare equipment for modifying the adhesive layer.

  Further, when the semiconductor wafer is cut together with the adhesive layer with a dicing blade or the like after the semiconductor wafer is attached to the adhesive layer without cutting the semiconductor wafer by the first dicing method, the present invention is concerned. By adopting the above-described configuration in the dicing die-bonding tape, it becomes difficult to generate chips by cutting the semiconductor wafer particularly in a state where the intermediate film exists below the non-adhesive layer, and the chips become an adhesive layer. It becomes difficult to adhere to. In addition, when a semiconductor chip with an adhesive layer is pushed up, peeling (floating) does not easily occur at the interface between the non-adhesive layer and the intermediate film, so it is more reliably removed at the interface between the adhesive layer and the non-adhesive layer. It becomes possible to do. For this reason, the pick-up property of a semiconductor chip with an adhesive layer can be improved. In particular, the process of cutting the semiconductor wafer using the dicing blade may cause the dicing blade to wear and the cutting performance of the dicing blade to be lowered. By adopting the above-described configuration in the dicing die-bonding tape according to the present invention, even when the semiconductor wafer is cut together with the adhesive layer with a worn dicing blade, chips are less likely to be generated and the non-adhesive layer is formed. Even if a crack occurs and breaks, peeling (floating) at the interface between the non-adhesive layer and the intermediate film is less likely to occur, and furthermore, it can be more reliably peeled off at the interface between the adhesive layer and the non-adhesive layer. It becomes possible.

  The peeling force between the non-adhesive layer and the intermediate film is 1 N / 25 mm or more. From the viewpoint of further improving the pickup property, the peeling force is preferably 2 N / 25 mm or more, more preferably 2.5 N / 25 mm or more. The upper limit of the peeling force is not particularly limited. The higher the peeling force, the better.

  The peeling force is obtained by using a tensile tester at 23 ° C. to grasp the end portions of the non-adhesive layer and the intermediate film and to peel the contact surface between the non-adhesive layer and the intermediate film into a T-shape. Measured.

  It is preferable that the surface of the intermediate film on the non-adhesive layer side is surface-treated in order to improve adhesiveness. Examples of the surface treatment include a method of applying an adhesion improver to the surface of the intermediate film on the non-stick layer side, a method of corona-treating the surface of the intermediate film on the non-stick layer side, and the like. In addition, since the adhesiveness of the pressure-sensitive adhesive changes depending on the temperature and the peeling speed, a method other than a method using a pressure-sensitive adhesive is preferable, a method of applying an adhesive strength improving agent or a method of corona treatment is more preferable, and The method of applying is more preferable.

  The elongation at break of the non-adhesive layer at 23 ° C. is preferably 10% or more, more preferably more than 50%, and preferably less than 100%. As the elongation at break is larger, the adhesive layer, the non-adhesive layer, the intermediate film, and the dicing layer are stretched without breaking or breaking the non-adhesive layer. The adhesive layer can be cut with higher accuracy.

  Since the intermediate film is located between the non-adhesive layer and the dicing layer, the elongation at break of the intermediate film at 23 ° C. is preferably larger than the elongation at break of the non-adhesive layer at 23 ° C., preferably 20 % Or more, more preferably 60% or more, still more preferably 100% or more, and particularly preferably 150% or more. As the elongation at break is larger, the adhesive layer, the non-adhesive layer, the intermediate film, and the dicing layer are stretched without breaking or breaking the non-adhesive layer. The adhesive layer can be cut with higher accuracy.

  The breaking elongation of the intermediate film at 23 ° C. is preferably 1% or more, more preferably 10% or more, and further preferably 50% or more larger than the breaking elongation of the non-adhesive layer at 23 ° C. .

  Examples of a method for increasing the elongation at break include a method using a polyolefin resin, a method using a polyester resin, and a method using a polybutadiene resin as materials for the non-adhesive layer and the intermediate film.

  The breaking elongation can be measured under the conditions of a width of 10 mm, a distance between marked lines of 25 mm, and a tensile speed of 500 mm / min using a tensile test apparatus (for example, “RCT-1310A” manufactured by Orientec Co., Ltd.), and is obtained from the following equation.

Elongation at break (%) = (L−25) / 25 × 100
L: Distance between marked lines when the non-adhesive layer or the intermediate film is broken (mm)

  In the dicing die bonding tape according to the present invention, it is preferable that an annular dicing ring is attached to the outer peripheral portion of the dicing layer during dicing. The diameter of the dicing layer is preferably larger than the diameter of the non-adhesive layer, and preferably larger than the diameter of the intermediate film.

  The diameter of the dicing layer is preferably larger than the inner diameter of the dicing ring. The diameter of the dicing layer is preferably the same as the outer diameter of the dicing ring or smaller than the outer diameter of the dicing ring.

  A first manufacturing method (first dicing method) of a semiconductor chip with an adhesive layer according to the present invention uses the dicing die bonding tape described above, and a protective sheet and one surface of the protective sheet. The adhesive layer of the dicing die bonding tape is used after the division of the laminated body using a laminated body having a semiconductor wafer after division that is laminated to individual semiconductor chips. A step of attaching to a semiconductor wafer; a step of peeling the protective sheet from the semiconductor wafer after the division; and stretching the adhesive layer, the non-adhesive layer and the intermediate film by stretching the dicing layer, and The adhesive layer is cut along the cut portion of the divided semiconductor wafer, and each of the half-cut semiconductor wafers in the divided semiconductor wafer is cut. Separating the body chip, and after dicing, peeling the adhesive layer to which the semiconductor chip is attached from the non-adhesive layer, and taking out the semiconductor chip together with the adhesive layer Prepare. The first manufacturing method of the semiconductor chip with an adhesive layer according to the present invention preferably includes a step of attaching the dicing layer to the annular dicing ring.

  In the first method for manufacturing a semiconductor chip with an adhesive layer according to the present invention, the adhesive layer is accurately cut along the cut portion of the divided semiconductor wafer while suppressing the generation of cutting fragments. it can. As a result, the pick-up property of the semiconductor chip with an adhesive layer can be enhanced.

  The second manufacturing method (second dicing method) of the semiconductor chip with an adhesive layer according to the present invention is the above-mentioned dicing die bonding tape using the dicing die bonding tape and the semiconductor wafer. The step of adhering the adhesive layer to the semiconductor wafer, the step of dicing the semiconductor wafer and the adhesive layer, and the adhesive having a semiconductor chip attached after dicing It is preferable to include a step of peeling the layer from the non-adhesive layer and taking out the semiconductor chip together with the adhesive layer.

  In the second method for manufacturing a semiconductor chip with an adhesive layer according to the present invention, the semiconductor wafer and the adhesive layer can be accurately cut while suppressing generation of chips. Furthermore, when a semiconductor chip with an adhesive layer is pushed up, peeling (floating) does not easily occur at the interface between the non-adhesive layer and the intermediate film layer, so peeling at the interface between the adhesive layer and the non-adhesive layer is easy. become. As a result, the pick-up property of the semiconductor chip with an adhesive layer can be enhanced.

  Hereinafter, the present invention will be clarified by describing specific embodiments and examples of the present invention with reference to the drawings.

(Dicing die bonding tape)
1A and 1B are diagrams schematically showing a dicing die bonding tape according to an embodiment of the present invention. Fig.1 (a) is a partial notch top view, FIG.1 (b) is a partial notch front sectional drawing which follows the II line | wire in Fig.1 (a). In FIG. 1 and the drawings to be described later, for the convenience of illustration, dimensions and sizes are appropriately changed from actual dimensions and sizes.

  As shown in FIGS. 1A and 1B, the dicing die bonding tape 1 has a long release layer 2. On the upper surface of the release layer 2, an adhesive layer 3, a non-adhesive layer 4, an intermediate film 6, and a dicing layer 5 are laminated in this order. The non-adhesive layer 4 is laminated on one surface (first surface) of the adhesive layer 3. A release layer 2 is laminated on the other surface (second surface) of the adhesive layer 3. The adhesive layer 3 is laminated on one surface (first surface) of the non-adhesive layer 4. An intermediate film 6 is laminated on the other surface (second surface) of the non-adhesive layer 4 opposite to the adhesive layer 3 side. The non-adhesive layer 4 is laminated on one surface (first surface) of the intermediate film 6. The dicing layer 5 is laminated on the other surface (second surface) opposite to the non-adhesive layer 4 side of the intermediate film 6.

  A plurality of laminates having an adhesive layer 3, a non-adhesive layer 4, an intermediate film 6 and a dicing layer 5 are arranged on the upper surface of the long release layer 2 at equal intervals. A protective sheet may be provided on the upper surface of the release layer 2 on the side of the laminate.

  The planar shape of the adhesive layer 3, the non-adhesive layer 4 and the intermediate film 6 is substantially circular. The planar shape of the dicing layer 5 is substantially circular. The diameter of the adhesive layer 3 may be the same as or different from the diameters of the non-adhesive layer 4 and the intermediate film 6. The diameter of the non-adhesive layer 4 may be the same as or different from the diameter of the intermediate film 6. The diameters of the non-stick layer 4 and the intermediate film 6 are preferably larger than the diameter of the adhesive layer 3. It is preferable that the outer peripheral side surfaces of the non-adhesive layer 4 and the intermediate film 6 protrude outward from the outer peripheral side surface of the adhesive layer 3. Moreover, it is preferable that the outer peripheral side surfaces of the non-adhesive layer 4 and the intermediate film 6 are not covered with the adhesive layer 3. When the size of the adhesive layer 3, the non-adhesive layer 4 and the intermediate film 6 satisfies such a preferable relationship, the adhesive layer 3 is bonded to the adhesive layer 3 when a semiconductor wafer is attached. The semiconductor wafer can be accurately aligned with the portion where the non-adhesive layer 4 is laminated. In addition, the semiconductor wafer can be more reliably attached to the adhesive layer 3. The outer peripheral side surface of the intermediate film 6 preferably has non-adhesiveness, and preferably does not have adhesiveness.

  The diameter of the dicing layer 5 is larger than the diameters of the adhesive layer 3, the non-adhesive layer 4 and the intermediate film 6. The outer peripheral side surface of the dicing layer 5 projects outward from the outer peripheral side surfaces of the adhesive layer 3, the non-adhesive layer 4 and the intermediate film 6. When the dicing layer 5 and the adhesive layer 3, the non-adhesive layer 4 and the intermediate film 6 satisfy such a preferable relationship, the semiconductor wafer is attached to the adhesive layer 3. The semiconductor wafer can be accurately aligned with the portion where the non-adhesive layer 4 of the adhesive layer 3 is laminated. After pasting, the non-adhesive layer 4 can be reliably disposed on one surface of the adhesive layer 3 to which the semiconductor wafer is pasted. For this reason, by increasing the peelability of the adhesive layer 3 from the non-adhesive layer 4, the semiconductor chip with the adhesive layer 3 can be easily detached from the non-adhesive layer 4 after dicing. In particular, when the non-adhesive layer 4 has non-adhesive properties, the semiconductor chip with the adhesive layer 3 can be more easily peeled from the non-adhesive layer 4. For this reason, production loss can be reduced and yield can be improved. Furthermore, since the dicing ring and the semiconductor wafer can be attached to different layers, the adhesive layer 3, the non-adhesive layer 4, the intermediate film 6, and the dicing layer 5 can be formed of optimum materials. For this reason, cutting property and pick-up property, and the joining reliability after die bonding can be made high.

  The release layer 2 is, for example, a release film. The release layer 2 is used to protect the surface of the adhesive layer 3 on which the semiconductor wafer is attached and to provide the product in a roll-like product form. Note that the release layer 2 is not necessarily used.

  Examples of the material constituting the release layer 2 include plastic resins. Specifically, polyester resin such as polyethylene terephthalate resin, polytetrafluoroethylene resin, polyethylene resin, polypropylene resin, polymethylpentene resin, polyvinyl acetate. Examples thereof include polyolefin resins such as resins.

  The surface of the release layer 2 may be subjected to a release treatment. The release layer may be a single layer or a plurality of layers. When the release layer is a plurality of layers, each layer may be formed of different resins.

  From the viewpoint of further improving the handleability or releasability of the release layer 2, the thickness of the release layer 2 is preferably 10 μm or more, and preferably 100 μm or less.

  The adhesive layer 3 is a layer used for die bonding of a semiconductor chip. The adhesive layer 3 is used for bonding a semiconductor chip to a substrate or another semiconductor chip.

  The adhesive layer 3 is formed of, for example, a curable resin composition containing a curable compound such as an appropriate curable resin, or a thermoplastic resin. Since the curable resin composition before curing is soft, it is easily deformed by an external force. After obtaining the semiconductor chip with the adhesive layer 3, the obtained semiconductor chip with the adhesive layer 3 is laminated on an adherend such as a substrate from the adhesive layer 3 side. Thereafter, the semiconductor chip can be firmly bonded to the adherend via the adhesive layer 3 by applying heat or light energy to cure the adhesive layer 3.

  A curing agent is used for curing the curable resin composition. Examples of the curing agent include heat curing acid anhydride curing agents such as trialkyltetrahydrophthalic anhydride, latent curing agents such as phenol curing agents, amine curing agents or dicyandiamide, and cationic catalyst curing. Agents and the like. In order to adjust the curing speed or the physical properties of the cured product, the curing agent and the curing accelerator may be used in combination.

  The thickness of the adhesive layer 3 is not particularly limited. The thickness of the adhesive layer 3 is generally 5 μm or more and 150 μm or less. An appropriate thickness of the adhesive layer is selected according to the design dimensions of the semiconductor device.

  The non-adhesive layer 4 has non-adhesiveness. The term “non-adhesive” includes not only the surface having no adhesiveness but also the case where the surface has such an adhesiveness that it does not stick when touched with a finger. Specifically, “non-adhesive” means that when the non-adhesive layer 4 is attached to a stainless steel plate and the non-adhesive layer 4 is peeled off at a peeling speed of 300 mm / min, the adhesive strength is 0.05 N / 25 mm width. It means the following.

  The non-adhesion layer 4 can be formed using, for example, an active energy ray curable composition or a thermosetting composition. The non-adhesion layer 4 is preferably formed of a composition containing an acrylic polymer or a polyolefin resin. The material of the non-adhesive layer 4 is preferably a crosslinked body obtained by crosslinking a composition containing an acrylic polymer. In this case, the polarity, storage elastic modulus or elongation at break of the non-adhesive layer 4 can be easily controlled and designed. Moreover, the pick-up property of the semiconductor chip with the adhesive layer 3 can be further improved as the material of the non-adhesive layer 4 is a crosslinked body obtained by crosslinking a composition containing an acrylic polymer.

  The acrylic polymer is not particularly limited. The acrylic polymer is preferably a (meth) acrylic acid alkyl ester polymer. As the (meth) acrylic acid alkyl ester polymer, a (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms is suitably used. By using a (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms, the polarity of the non-adhesive layer 4 becomes sufficiently low, the surface energy of the non-adhesive layer 4 becomes low, and the adhesive The peelability of the layer 3 from the non-adhesive layer 4 is increased.

  The composition preferably contains at least one of an active energy ray reaction initiator and a thermal reaction initiator, and more preferably contains an active energy ray reaction initiator. The active energy ray reaction initiator is preferably a photoreaction initiator.

  The active energy rays include ultraviolet rays, electron rays, α rays, β rays, γ rays, X rays, infrared rays and visible rays. Among these active energy rays, ultraviolet rays or electron beams are preferable because they are excellent in curability and hardened products are hardly deteriorated.

  As the photoreaction initiator, for example, a photo radical generator or a photo cation generator can be used. Examples of the thermal reaction initiator include a thermal radical generator. An isocyanate-based crosslinking agent may be added to the composition in order to control the adhesive force.

  The thickness of the non-adhesion layer 4 is not particularly limited. The thickness of the non-adhesive layer 4 is preferably 5 μm or more, more preferably 10 μm or more, preferably 80 μm or less, more preferably 50 μm or less. When the thickness of the non-adhesive layer 4 is not less than the above lower limit, the expandability is further enhanced. When the thickness of the non-adhesive layer 4 is not more than the above upper limit, the allowable range of the cutting amount by the dicing blade is widened, the thickness becomes even more uniform, and the accuracy of dicing is further improved. The thickness of the non-adhesive layer 4 is particularly preferably 30 μm or more and 50 μm or less. When the thickness of the non-adhesive layer 4 is 30 μm or more and 50 μm or less, the pick-up property of the semiconductor chip with the adhesive layer 3 is further improved.

  The dicing layer 5 has a base material 5A and an adhesive portion 5B laminated on one surface (first surface) of the base material 5A. Thus, it is preferable that the said dicing layer has a base material and the adhesion part laminated | stacked on one surface of this base material. The dicing layer is preferably laminated on the surface of the intermediate film from the adhesive part side. The adhesive portion 5B is preferably an adhesive layer. A dicing layer 5 is attached to the surface of the non-adhesive layer 4 from the adhesive portion 5B side. The dicing layer 5 is indirectly attached to the adhesive layer 3 through the non-adhesive layer 4.

  Examples of the material of the intermediate film 6 include plastic resins, and specifically, polyester resins such as polyethylene terephthalate resins, polytetrafluoroethylene resins, polyethylene resins, polypropylene resins, polymethylpentene resins, and polyvinyl acetate resins. Examples thereof include polyolefin resin, polyvinyl chloride resin, and polyimide resin. Among these, a polyolefin resin or a polyester resin is preferable. When the material of the intermediate film 6 is a polyolefin resin or a polyester resin, the pickup property of the semiconductor chip with the adhesive layer 3 can be further enhanced.

  The thickness of the intermediate film 6 is not particularly limited. The thickness of the intermediate film 6 is preferably 5 μm or more, more preferably 10 μm or more, preferably 50 μm or less, more preferably 30 μm or less, and even more preferably 20 μm or less. When the thickness of the intermediate film 6 is equal to or greater than the above lower limit, the intermediate film is hardly broken and the expandability is further enhanced. When the thickness of the intermediate film 6 is less than or equal to the above upper limit, the thickness becomes even more uniform and the accuracy of dicing is further improved.

  The total of the thickness of the non-adhesive layer 4 and the thickness of the intermediate film 6 is preferably 10 μm or more, more preferably 20 μm or more, preferably 130 μm or less, more preferably 75 μm or less. When the sum of the thickness of the non-adhesive layer 4 and the thickness of the intermediate film 6 is not less than the above lower limit, the expandability is further enhanced because the film rigidity is not high. When the total thickness of the non-adhesive layer 4 and the intermediate film 6 is less than or equal to the above upper limit, the thickness becomes even more uniform and the accuracy of dicing is further improved. Moreover, since the film flexibility is not impaired, the pickup property is further improved. The total of the thickness of the non-adhesive layer 4 and the thickness of the intermediate film 6 is particularly preferably 75 μm or less. When the total thickness of the non-adhesive layer 4 and the intermediate film 6 is 75 μm or less, the splitting property when the semiconductor wafer is cut and the pick-up property of the semiconductor chip with the adhesive layer 3 are further improved.

  The peeling force between the non-adhesive layer 4 and the intermediate film 6 is preferably larger than the peeling force between the adhesive layer 3 and the non-adhesive layer 4. The peeling force between the adhesive layer 3 and the non-adhesive layer 4 is measured in the same manner as the peeling force between the non-adhesive layer 4 and the intermediate film 6.

  The ratio of the thickness of the non-adhesive layer 4 to the thickness of the intermediate film 6 (thickness of the non-adhesive layer 4 / thickness of the intermediate film 6) is preferably 0.5 or more, more preferably 1.0 or more, and preferably 6.0 or less. More preferably, it is 4.0 or less. When the ratio of the thickness of the non-adhesive layer 4 to the thickness of the intermediate film 6 is not less than the above lower limit and not more than the above upper limit, the pickup property of the semiconductor chip with the adhesive layer 3 is further improved.

  The dicing layer 5 has an extension portion 5 x that protrudes outward from the outer peripheral side surfaces of the adhesive layer 3, the non-adhesive layer 4, and the intermediate film 6. One surface of the extension portion 5x of the dicing layer 5 is attached to the upper surface of the release layer 2 by the adhesive portion 5B. That is, the dicing layer 5 is attached to the upper surface of the release layer 2 in a region outside the outer peripheral side surfaces of the adhesive layer 3, the non-adhesive layer 4, and the intermediate film 6.

  The dicing layer 5 has the extension portion 5x because the extension portion 5x located outside the outer peripheral side surface of the adhesive layer 3 when the semiconductor wafer is attached to the other surface of the adhesive layer 3. This is for attaching a dicing ring to the adhesive portion 5B.

  Examples of the material constituting the base material 5A of the dicing layer 5 include plastic resins. Specifically, polyester resins such as polyethylene terephthalate resins, polytetrafluoroethylene resins, polyethylene resins, polypropylene resins, and polymethylpentene resins. And polyolefin resins such as polyvinyl acetate resin and polyvinyl chloride resin. Of these, polyolefin resin is suitably used because of its excellent expandability and low environmental impact.

  The adhesive part 5B is not particularly limited. Specific examples of the adhesive constituting the adhesive part 5B include an acrylic adhesive, a special synthetic rubber adhesive, a synthetic resin adhesive, a rubber adhesive, and the like. Of these, a pressure-sensitive acrylic pressure-sensitive adhesive is preferable. When a pressure-sensitive type acrylic pressure-sensitive adhesive is used, the dicing ring can be more easily peeled off from the pressure-sensitive adhesive portion 5B. Furthermore, the cost of the adhesion part 5B can be reduced.

  The peeling force between the intermediate film 6 and the dicing layer 5 is preferably larger than the peeling force between the adhesive layer 3 and the non-adhesive layer 4. It is preferable that the adhesive portion 5B is configured to satisfy such a peeling force. The peel force between the intermediate film 6 and the dicing layer 5 is measured in the same manner as the peel force between the non-adhesive layer 4 and the intermediate film 6.

  The thickness of the dicing layer 5 is not particularly limited. The thickness of the dicing layer 5 is preferably 50 μm or more, more preferably 80 μm or more, preferably 150 μm or less, more preferably 110 μm or less. When the thickness of the dicing layer 5 is not less than the above lower limit and not more than the above upper limit, the peelability of the release layer 2 and the expandability of the dicing layer 5 are further enhanced.

  In the dicing-die bonding tape 1 shown in FIGS. 1A and 1B, the dicing layer 5 is substantially circular. 2A and 2B show a modification of the dicing die bonding tape. The dicing-die bonding tape 1 shown in FIGS. 1A and 1B and the dicing-die bonding tape 11 shown in FIGS. 2A and 2B differ only in the shape of the dicing layer. The dicing layer 5 in the dicing die bonding tape 1 and the dicing layer 12 in the dicing die bonding tape 11 are both substantially circular. The dicing layer 12 in the dicing-die bonding tape 11 has a sticking start point 12C. More specifically, the dicing layer 12 has a circular shape except for the sticking start point 12C. The dicing layer 12 includes a base material 12A and an adhesive portion 12B, and includes an extension portion 12x projecting outward from the outer peripheral side surfaces of the adhesive layer 3 and the non-adhesive layer 4. One surface of the extension portion 12x of the dicing layer 12 is attached to the upper surface of the release layer 2 by the adhesive portion 12B.

  Thus, it is preferable that the sticking origin is provided in the one part area | region of the dicing layer. Moreover, it is preferable that a plurality of sticking start points are provided in one dicing layer, and it is preferable that at least two sticking start points are provided. When a plurality of sticking start points are provided in one dicing layer, the sticking start points are preferably provided on one end side of the dicing layer and the other end side opposite to the one end side. In this case, the directionality when using the dicing die bonding tape can be eliminated. In addition, for example, when the dicing layer cannot be well pasted from the sticking starting point on one end side, the dicing layer can be stuck from the sticking starting point on the other end side. More specifically, when the dicing layer cannot be applied well from the application starting point on one end side, after winding up the long dicing die bonding tape once and then unwinding it again, A dicing layer can be pasted from the pasting starting point.

(Manufacturing method of semiconductor chip with adhesive layer)
Next, an example of a manufacturing method of the semiconductor chip with the adhesive layer 3 when the dicing die bonding tape 1 shown in FIGS. 1A and 1B is used will be described below.

  First, the dicing die bonding tape 1 and the laminated body 21 are prepared.

  As illustrated in FIG. 3D, the stacked body 21 includes a protective sheet 22 and a divided semiconductor wafer 23 that is stacked on one surface (first surface) of the protective sheet 22. After the division, the semiconductor wafer 23 is divided into individual semiconductor chips. The planar shape of the divided semiconductor wafer 23 is substantially circular.

  The laminated body 21 can be obtained as follows through each step shown in FIGS.

  First, as shown in FIG. 3A, a semiconductor wafer 23A is prepared. The semiconductor wafer 23A is a pre-division semiconductor wafer. The planar shape of the semiconductor wafer 23A is substantially circular. On the surface of the semiconductor wafer 23A, circuits for configuring individual semiconductor chips are formed in each region partitioned by streets in a matrix.

  As shown in FIG. 3B, the prepared semiconductor wafer 23A is diced from the surface side. After the dicing, the semiconductor wafer 23A is not divided. On the surface of the semiconductor wafer 23A, cut portions 23a (cuts) for dividing into individual semiconductor chips are formed. The dicing is performed using, for example, a dicing apparatus including a blade that rotates at high speed.

  Next, as shown in FIG. 3C, a protective sheet 22 is attached to the surface of the semiconductor wafer 23A. Thereafter, the back surface of the semiconductor wafer 23A is ground to reduce the thickness of the semiconductor wafer 23A. Here, the back surface of the semiconductor wafer 23A is ground to the cut portion 23a. In this way, the laminate 21 shown in FIG. 3D can be obtained.

  The back surface of the semiconductor wafer 23A is preferably ground to the cut portion 23a. Grinding is performed using a grinder such as a grinder equipped with a grinding magnet or the like. At the time of grinding, since the protective sheet 22 is affixed to the surface of the semiconductor wafer 23A, grinding dust does not adhere to the circuit. Moreover, even if the semiconductor wafer 23A is divided into individual semiconductor chips after grinding, the plurality of semiconductor chips remain attached to the protective sheet 22 without being separated.

  After obtaining the laminated body 21, the laminated body 21 is mounted on the stage 25 from the protective sheet 22 side, as shown to Fig.4 (a). An annular dicing ring 26 is provided on the stage 25 at a position spaced apart from the outer peripheral side surface of the divided semiconductor wafer 23 by a predetermined distance. While peeling the release layer 2 of the dicing die bonding tape 1 or after peeling the release layer 2, the other surface of the exposed adhesive layer 3 is attached to the back surface of the divided semiconductor wafer 23. . In addition, the adhesive portion 5 </ b> B located at the extended portion 5 x of the exposed dicing layer 5 is attached to the annular dicing ring 26.

  FIG. 6A is a front sectional view showing a state when the dicing layer 5 is attached to the dicing ring 26, and FIG. 6B is a plan view showing the state after the dicing layer 5 is attached to the dicing ring 26. Show.

  As shown in FIGS. 6A and 6B, usually, when the dicing layer 5 is attached to the dicing ring 26, the dicing layer 5 is peeled off from the upper surface of the release layer 2 using the peeling edge 32. . The dicing layer 5 is attached to the dicing ring 26 and pressed by the roll 31. The adhesive layer 3, the non-adhesive layer 4, the intermediate film 6 and the dicing layer 5 are stretched so that wrinkles do not occur in the adhesive layer 3, the non-adhesive layer 4, the intermediate film 6 and the dicing layer 5. However, the outer peripheral portion of the dicing layer 5 is attached to the dicing ring 26. In FIG. 6B, the diameter of the non-adhesive layer 4 and the intermediate film 6 is A, the diameter of the dicing layer 5 is B, the inner diameter of the dicing ring 26 is X, and the outer diameter of the dicing ring 26 is Y.

  After the dicing layer 5 is attached to the dicing ring 26, as shown in FIG. 4B, the divided semiconductor wafer 23 to which the adhesive layer 3 is attached is taken out from the stage 25 and turned over. At this time, the dicing ring 26 is taken out with the dicing ring 26 attached to the dicing layer 5. The separated semiconductor wafer 23 taken out is turned over so that the surface is directed upward and placed on another stage 27.

  Next, as shown in FIG. 5A, the protective sheet 22 is peeled off from the surface of the semiconductor wafer 23 after the division. When the protective sheet 22 is peeled off, the protective sheet 22 may be heated to facilitate peeling. However, it is preferable not to modify the adhesive layer 3 when the protective sheet 22 is heated.

  Next, as shown in FIG. 5B, the adhesive layer 3, the non-adhesive layer 4, the intermediate film 6, and the dicing layer 5 are stretched to cut only the adhesive layer 3. At this time, the adhesive layer 3 is cut along the cut portion 23a of the divided semiconductor wafer 23, and the individual semiconductor chips in the divided semiconductor wafer 23 are separated. Since the adhesive layer 3 is affixed to the back surface of the divided semiconductor wafer 23, the adhesive layer 3 is attached along the cut portion 23a of the divided semiconductor wafer 23, that is, along the dicing line. Can be cut. After the cutting of the adhesive layer 3, a cut portion 3 a is formed in the adhesive layer 3.

  In the present specification, stretching and cutting the adhesive layer 3 is also referred to as splitting. Dicing is also included in the work (split) for stretching and cutting the adhesive layer 3, and the dicing die bonding tape 1 stretches and cuts (splits) the adhesive layer 3. Can be used. In other words, the dicing-die bonding tape 1 can be said to be a split-die bonding tape.

  As a method of stretching the adhesive layer 3, for example, a method of pushing down the dicing ring 26, and pushing up from below the adhesive layer 3, the adhesive layer 3, the non-adhesive layer 4, the intermediate film 6 and A method of applying the force A shown in FIG. By applying the force A, the dicing layer 5 is pulled outward, and accordingly, the forces B1 and B2 that are pulled outward are applied to the non-adhesive layer 4 and the intermediate film 6, resulting in an adhesive. Layer 3 is stretched.

  It is preferable that the sizes of the non-adhesive layer 4, the intermediate film 6, and the dicing layer 5 satisfy the specific relationship. In this case, the adhesive layer 3, the non-adhesive layer 4, the intermediate film 6 and the dicing layer 5 are stretched so that the non-adhesive layer 4 is not cut and is cut into the cut portion 23 a of the semiconductor wafer 23 after the division. Accordingly, only the adhesive layer 3 can be cut with higher accuracy. For this reason, chipping of the adhesive layer 3 hardly occurs below the semiconductor chip. Since the adhesive layer 3 can be cut accurately, the pick-up property of the semiconductor chip with the adhesive layer 3 is improved. Since chipping of the adhesive layer 3 is unlikely to occur, when a semiconductor chip with the adhesive layer 3 is laminated and bonded to a member to be bonded, the semiconductor chip is difficult to tilt and the bonding reliability of the semiconductor chip is high Get higher.

  It is preferable that the adhesive layer 3 is not modified before or during stretching of the adhesive layer 3, the non-adhesive layer 4, the intermediate film 6, and the dicing layer 5. Before or during stretching the adhesive layer 3, the non-adhesive layer 4, the intermediate film 6, and the dicing layer 5, the adhesive layer 3 is heated (protective sheet) to modify the adhesive layer 3. It is preferable not to cool, and not to irradiate laser light. However, the adhesive layer 3 may be modified. Even when the adhesive layer 3 is not modified, the manufacturing efficiency of the semiconductor chip with the adhesive layer 3 is considerably increased.

  After the adhesive layer 3 is cut, the semiconductor chip is peeled off from the non-adhesive layer 4 together with the adhesive layer 3 in a state where the adhesive layer 3 is laminated and taken out. In this way, a semiconductor chip with the adhesive layer 3 can be obtained. When the dicing die bonding tape 1 is used, the non-adhesive layer 4 having non-adhesiveness is positioned below the adhesive layer 3 portion to which the semiconductor wafer 23 after being divided is attached. Therefore, the pick-up property of the semiconductor chip with the adhesive layer 3 is improved. After cutting the adhesive layer 3, before the semiconductor chip with the adhesive layer 3 is peeled from the non-adhesive layer 4, the dicing layer 5 is stretched to further expand the interval between the individual semiconductor chips. Also good.

  Next, another example of the manufacturing method of the semiconductor chip with the adhesive layer 3 using the dicing die bonding tape 1 shown in FIGS. 7A and 7B will be described below.

  First, the dicing die bonding tape 1 and the semiconductor wafer 41 described above are prepared. The planar shape of the semiconductor wafer 41 is a circle. The semiconductor wafer 41 is not divided into individual semiconductor chips.

  As shown in FIG. 7A, the semiconductor wafer 41 is turned over, and the semiconductor wafer 41 turned over is placed on the stage 25 from the front side. An annular dicing ring 26 is provided on the stage 25 at a position spaced apart from the outer peripheral side surface of the semiconductor wafer 41 by a certain distance. While peeling the release layer 2 of the dicing die-bonding tape 1 or after peeling the release layer 2, the other surface of the exposed adhesive layer 3 is attached to the back surface of the semiconductor wafer 41. Further, the exposed outer peripheral portion of the dicing layer 5 is attached to the dicing ring 26.

  Next, as shown in FIG. 7B, the semiconductor wafer 41 with the adhesive layer 3 attached is taken out of the stage 25 and turned over. At this time, the dicing ring 26 is taken out while being attached to the adhesive portion 5B of the dicing layer 5. The taken-out semiconductor wafer 41 is turned over so that the surface faces upward, and placed on another stage 27. Next, the semiconductor wafer 41 is diced together with the adhesive layer 3 and divided into individual semiconductor chips. The semiconductor wafer 41 and the adhesive layer 3 are each divided so as to penetrate both surfaces. After dicing, a cut portion 41 a is formed on the semiconductor wafer 41, and a cut portion 3 a is formed on the adhesive layer 3. A cut may be formed in the non-adhesive layer 4. It is preferable that a cut is formed in the non-adhesive layer 4. However, the non-adhesive layer 4 is preferably not cut (divided). It is preferable that no cut is formed in the intermediate film 5, and the intermediate film 5 is preferably not cut (divided).

  Next, the dicing layer 5 is stretched, and the semiconductor chip is peeled off from the non-adhesive layer 4 together with the adhesive layer 3 and taken out, whereby the semiconductor chip with the adhesive layer 3 can be obtained.

  Hereinafter, the present invention will be specifically described by giving examples and comparative examples. The present invention is not limited to the following examples.

  The following compounds were prepared as materials constituting the composition for forming the non-adhesive layer.

(Acrylic polymer 1)
95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution), and 0.01 parts by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Further, 100 parts by weight of the solid content of this solution was reacted with 3.5 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) to give an acrylic copolymer (acrylic polymer 1). Obtained. The obtained acrylic polymer 1 had a weight average molecular weight of 700,000 and an acid value of 0.86 (mgKOH / g).

(Photopolymerization initiator)
Irgacure 651 (Ciba Japan)

(Oligomer)
U324A: manufactured by Shin-Nakamura Chemical Co., Ltd., urethane acrylic oligomer (10 functional urethane acrylic oligomer), weight average molecular weight: 1,300

(Crosslinking agent)
Coronate L-45: Nippon Polyurethane Industry Co., Ltd., isocyanate-based crosslinking agent

Example 1
In Example 1, the dicing die bonding tape shown in FIGS. 1A and 1B was formed.

  100 parts by weight of the acrylic polymer 1, 1 part by weight of Irgacure 651, 15 parts by weight of U324A, which is a urethane acrylic oligomer, and 1 part by weight of Coronate L-45 were blended to obtain a composition. The obtained composition was coated on a release PET (polyethylene terephthalate) film, dried at 110 ° C. for 5 minutes, the solvent was removed, and a composition layer was formed.

Next, the entire region of the obtained composition layer was irradiated with light so as to have an energy of 2000 mJ / cm ² using a mercury lamp, thereby curing the composition layer. In this way, a non-adhesive layer (thickness 40 μm) having non-adhesive properties was obtained.

  In addition, a PET resin film (thickness 12 μm) formed of polyethylene terephthalate (PET) resin was prepared as an intermediate film. An adhesion improver (“Polyment NK350” manufactured by Nippon Shokubai Co., Ltd.) was applied to the surface on which the non-adhesive layer of this PET resin film was laminated.

  Using the obtained non-adhesive layer and the prepared intermediate film, a dicing die bonding tape was produced in the following manner.

  15 parts by weight of G-2050M (manufactured by NOF Corporation, epoxy-containing acrylic polymer, weight average molecular weight Mw 200,000), 70 parts by weight of EXA-7200HH (manufactured by DIC, dicyclopentadiene type epoxy), and HP-4032D (DIC Corporation) Manufactured, Naphthalene type epoxy compound) 15 parts by weight, 38 parts by weight of YH-309 (manufactured by Mitsubishi Chemical Corporation, acid anhydride curing agent), 8 parts by weight of 2MAOK-PW (manufactured by Shikoku Kasei Co., Ltd., imidazole compound), 2 parts by weight of KBM-403 (manufactured by Shin-Etsu Chemical Co., Ltd., epoxysilane) and 10 parts by weight of MT-10 (manufactured by Tokuyama, surface hydrophobized fumed silica) were blended to obtain a blend. The obtained blend was added to methyl ethyl ketone (MEK) as a solvent so as to have a solid content of 60% by weight and stirred to obtain a coating solution.

  The obtained coating liquid was applied on a release PET film so as to have a thickness of 7 μm, and dried by heating in an oven at 110 ° C. for 2 minutes. In this way, an adhesive layer was formed on the release PET film. Thereafter, the adhesive layer was cut into a circle.

  Next, the obtained non-adhesive layer was laminated at 60 ° C. on the surface opposite to the release PET fill side of the adhesive layer. Thereafter, the prepared intermediate film was laminated at 60 ° C. on the surface of the non-adhesive layer opposite to the adhesive layer side to obtain a laminate. Next, the non-adhesive layer and the intermediate film are larger than the adhesive layer, and the non-adhesive layer and the intermediate film have a region protruding sideward from the outer peripheral side surface of the adhesive layer. Layers and intermediate films were cut into circles.

  Then, on the surface opposite to the non-adhesive layer side of the intermediate film, an acrylic adhesive part (adhesive layer, adhesive on one side of ELEGrip UHP-0805MC (olefin base material (base material thickness 80 μm)) which is a dicing layer A UV curable dicing tape (manufactured by Denki Kagaku Kogyo Co., Ltd.) having a thickness of 5 μm) was applied from the adhesive portion side.

  Thereafter, the dicing layer was cut out. Thus, the release PET film / adhesive layer / non-adhesive layer / intermediate film / dicing layer (adhesive part on the intermediate film side and substrate on the opposite side of the intermediate film) were laminated in this order. A dicing die bonding tape having a laminated structure was produced.

(Examples 2 to 4)
A dicing-die bonding tape was obtained in the same manner as in Example 1 except that the type and thickness of the intermediate film were changed.

  In Example 2, a PET resin film (thickness 12 μm) formed of polyethylene terephthalate (PET) resin is prepared as an intermediate film, and the surface on the side where the non-adhesive layer of this PET resin film is laminated is subjected to corona treatment. Used.

  In Example 3, a PET resin film (thickness 25 μm) formed of polyethylene terephthalate (PET) resin is prepared as an intermediate film, and an adhesive strength improver is provided on the surface on which the non-adhesive layer of the PET resin film is laminated. (“Polyment NK350” manufactured by Nippon Shokubai Co., Ltd.) was applied and used.

  In Example 4, a PE resin film (thickness 20 μm) formed of polyethylene (PE) resin is prepared as an intermediate film, and the surface on which the non-adhesive layer of the PE resin film is laminated is subjected to corona treatment. Using.

(Comparative Example 1)
A dicing die bonding tape was obtained in the same manner as in Example 1 except that the intermediate film was not used.

(Comparative Examples 2 and 3)
A dicing-die bonding tape was obtained in the same manner as in Example 1 except that the type and thickness of the intermediate film were changed.

  In Comparative Example 2, a PET resin film (thickness 12 μm) formed of polyethylene terephthalate (PET) resin was prepared as an intermediate film, and this PET resin film was used as it was.

  In Comparative Example 3, a PE resin film (thickness 20 μm) formed of polyethylene (PE) resin was prepared as an intermediate film, and this PE resin film was used as it was.

(Evaluation)
(1) Peeling force In Examples 1 to 4 and Comparative Examples 2 and 3, using a tensile tester at 23 ° C., the ends of the non-adhesive layer and the intermediate fill are grasped, and the non-adhesive layer and the intermediate The contact surface with the film was peeled off into a T shape at a speed of 300 mm / min.

  The laminated body of the non-adhesion layer, intermediate | middle film, and dicing layer in the dicing die-bonding tape of Examples 1-4 and Comparative Examples 2 and 3 was prepared. In Examples 1 to 4 and Comparative Examples 2 and 3, after laminating a film tape ("No. 626001" manufactured by Slion Tech Co., Ltd.) on the non-adhesive layer, the film tape is attached upward and the dicing layer is attached downward, By pulling up and down, the non-adhesive layer and the intermediate film were peeled off in a T shape, and the peel force between the non-adhesive layer and the intermediate film was measured (see FIG. 8, reference numeral in FIG. 8: film tape 51, non-adhesive layer). 52, intermediate film 53, dicing layer 54).

  In Comparative Example 1, using a tensile tester at 23 ° C., the ends of the non-adhesive layer and the dicing layer were grasped, and the contact surface between the non-adhesive layer and the dicing layer was measured at a rate of 300 mm / min. I peeled it into a shape.

  The laminated body of the non-adhesion layer and dicing layer in the dicing die-bonding tape of the comparative example 1 was prepared. In Comparative Example 1, in the obtained dicing-die bonding tape, a film tape (“No. 626001” manufactured by Sliontec Co., Ltd.) was laminated on the non-adhesive layer, and then the film tape was attached upward and the dicing layer was attached downward. Then, the non-adhesive layer and the dicing layer were peeled off in a T shape by pulling in the vertical direction, and the peel force between the non-adhesive layer and the dicing layer was measured.

(2) Breaking elongation Non-adhesive layers and intermediate films in Examples and Comparative Examples were prepared. The breaking elongation at 23 ° C. of the non-adhesive layer and the intermediate film was measured under the conditions of a width of 10 mm in the MD direction, a distance between marked lines of 25 mm, and a tensile speed of 500 mm / min using “RCT-1310A” manufactured by Orientec. And obtained from the following equation. The relationship between the elongation at break between the non-adhesive layer and the intermediate film was determined according to the following criteria.

Elongation at break (%) = (L−25) / 25 × 100
L: Distance between marked lines when base material breaks (mm)
[Criteria for relationship of elongation at break]
A: The breaking elongation of the intermediate film is larger than the breaking elongation of the non-adhesive layer, and the absolute value of the difference between the breaking elongation of the intermediate film and the non-adhesive layer is 50% or more. B: The breaking elongation of the intermediate film is non-adhesive The absolute value of the difference between the breaking elongation of the intermediate film and the non-adhesive layer is 10% or more and less than 50%. C: The breaking elongation of the intermediate film is larger than the breaking elongation of the non-adhesive layer. The absolute value of the difference between the breaking elongation of the intermediate film and the non-adhesive layer is less than 10%.

(3) Splitting property and pick-up property in the first dicing method Evaluation by the first dicing method was performed. Cuts with a depth of 100 μm were made on a surface of a semiconductor wafer (silicon wafer, thickness 700 μm) having a diameter of 300 mm (12 inches) at 10 mm vertical and horizontal pitches. Next, a back grinding tape as a protective sheet was laminated on the surface of the semiconductor wafer from the acrylic adhesive side. Next, the back surface of the semiconductor wafer was polished and mirror-finished until the thickness of the semiconductor wafer reached 50 μm. Thus, the laminated body of the protection sheet and the semiconductor wafer after a division | segmentation was obtained.

  A dicing ring having an inner diameter of 350 mm and an outer diameter of 380 mm was prepared. Next, using a wafer mounter DAM-812M (manufactured by Takatori), a dicing die bonding tape was attached to the back surface of the semiconductor wafer and the dicing ring after the laminate was divided. The stage on which the semiconductor wafer was placed after the lamination was divided was set to 60 ° C.

  Next, the divided semiconductor wafer with the adhesive layer attached was taken out of the stage, turned over, and placed on another stage. Thereafter, the protective sheet was peeled off at 60 ° C. from the surface of the divided semiconductor wafer. At this time, the adhesive layer was not modified.

  Using bonder bestem D-02 (manufactured by Canon Machinery Co., Ltd.), the adhesive amount, non-adhesive layer, intermediate film (not used in Comparative Example 1), and dicing layer with an expanded amount of 4.5 mm at 23 ° C. Was stretched to cut the adhesive layer.

  After cutting the adhesive layer, the ratio (splitability) of the number of individual semiconductor chips in which the adhesive layer was cut along the cut portion of the divided semiconductor wafer was evaluated. The splitting property was determined according to the following criteria.

[Criteria for splitting properties]
○: The adhesive layer was 100% split and the non-adhesive layer was not cracked Δ: The adhesive layer was 100% split, but a part of the non-adhesive layer was cracked ×: adhesive layer Did not split

  After splitting, using a bonder bestem D-02 (Canon Machinery Co., Ltd.), collet size 9mm square, push-up speed 5mm / sec, pick-up needle 19pin, temperature 23 ° C, with 20 adhesive layers Semiconductor chips were picked up continuously. The pick-up property of the semiconductor chip with an adhesive layer was determined according to the following criteria.

[Pickup criteria]
○○: There was no semiconductor chip with an adhesive layer that could not be picked up, and no cut fragments were attached to the adhesive layer. ○: There was no semiconductor chip with an adhesive layer that could not be picked up. Slightly broken pieces are attached to the adhesive layer. Δ: There is no semiconductor chip with an adhesive layer that could not be picked up, but many cut pieces are attached to the adhesive layer, or the semiconductor chip. X: Some of the adhesive layer is missing ×: There is a semiconductor chip with an adhesive layer that could not be picked up

(4) Dicing property and pickup property in the second dicing method Evaluation by the second dicing method was performed. The release layer of the dicing die-bonding tape was peeled off from the adhesive layer to expose the adhesive layer. The exposed adhesive layer was laminated on one surface of a 12 inch diameter silicon wafer (thickness: 80 μm) at a temperature of 60 ° C. to prepare an evaluation sample.

  The evaluation sample was diced into a chip size of 10 mm × 10 mm at a feed rate of 50 mm / sec using a dicing apparatus DFD651 (manufactured by Disco). At this time, a worn dicing blade after being used for a long time (dicing travel distance 100 m) was used. The dicing property was determined according to the following criteria.

[Dicision criteria]
◯: The adhesive layer is completely diced, the non-adhesive layer or the intermediate film is not cracked, and the non-adhesive layer, the intermediate film (not used in Comparative Example 1) and the cut pieces of the adhesive layer are kerf △: Adhesive layer is completely diced, part of non-adhesive layer or intermediate film is broken, and cut pieces of non-adhesive layer, intermediate film or adhesive layer are in kerf ×: The adhesive layer was completely diced, but a part of the non-adhesive layer or the intermediate film was broken, and the non-adhesive layer, the intermediate film, or the cut piece of the adhesive layer was adhesive Adhered to the adhesive layer

  After dicing, using a die bonder best D-02 (made by Canon Machinery Co., Ltd.), with 20 adhesive layers under the conditions of a collet size 9 mm square, push-up speed 5 mm / sec, pick-up needle 19 pin, temperature 23 ° C. Semiconductor chips were picked up continuously. The pick-up property of the semiconductor chip with the adhesive layer was determined based on the same criteria as the pick-up property in the first dicing method.

  The results are shown in Table 1 below.

DESCRIPTION OF SYMBOLS 1 ... Dicing-die bonding tape 2 ... Release layer 3 ... Adhesive agent layer 3a ... Cutting part 4 ... Non-adhesion layer 5 ... Dicing layer 5A ... Base material 5B ... Adhesive part 5x ... Extension part 6 ... Intermediate film 11 ... Dicing die bonding tape 12 ... Dicing layer 12A ... Substrate 12B ... Adhesive part 12C ... Starting point 12x ... Extension part 21 ... Laminated body 22 ... Protective sheet 23 ... Divided semiconductor wafer 23A ... Semiconductor wafer 23a ... Cut part 25 ... Stage 26 ... Dicing ring 27 ... Stage 31 ... Roll 32 ... Peeling edge 41 ... Semiconductor wafer 41a ... Cutting part

Claims (10)

An adhesive layer;
A non-tacky layer that is laminated on one surface of the adhesive layer and has non-tackiness;
An intermediate film laminated on the surface of the non-adhesive layer opposite to the adhesive layer side;
A dicing layer laminated on the surface opposite to the non-adhesive layer side of the intermediate film,
The dicing die-bonding tape whose peeling force of the said non-adhesion layer and the said intermediate | middle film is 1 N / 25mm or more.   The dicing die bonding tape according to claim 1, wherein the elongation at break of the intermediate film is larger than the elongation at break of the non-adhesive layer.   The dicing die-bonding tape according to claim 2, wherein the non-adhesive layer has a breaking elongation of less than 100%, and the intermediate film has a breaking elongation of 100% or more.   The said dicing layer has a base material and the adhesion part laminated | stacked on one surface of the said base material, The said dicing layer is laminated | stacked on the surface of the said intermediate | middle film from the said adhesion part side. The dicing die-bonding tape of any one of -3.   The dicing die-bonding tape of any one of Claims 1-4 by which the surface by the side of the said non-adhesion layer of the said intermediate film is surface-treated in order to improve adhesiveness.   The dicing die-bonding tape according to any one of claims 1 to 5, wherein the material of the non-adhesive layer is a crosslinked body obtained by crosslinking a composition containing an acrylic polymer.   The dicing die-bonding tape of any one of Claims 1-6 whose material of the said intermediate | middle film is polyolefin resin or polyester resin. Using the dicing die bonding tape according to any one of claims 1 to 7, and
Using a laminated body having a semiconductor wafer after division that is laminated on one surface of the protective sheet and the protective sheet and is divided into individual semiconductor chips,
Attaching the adhesive layer of the dicing die-bonding tape to the semiconductor wafer after the division of the laminate;
Peeling the protective sheet from the divided semiconductor wafer;
The adhesive layer, the non-adhesive layer, and the intermediate film are stretched by stretching the dicing layer, the adhesive layer is cut along the cut portion of the semiconductor wafer after the division, and the division is performed. Separating the individual semiconductor chips in a post-semiconductor wafer;
After dicing, the adhesive layer to which the semiconductor chip is attached is peeled from the non-adhesive layer, and the semiconductor chip is taken out together with the adhesive layer. Semiconductor chip manufacturing method. Forming a notch for dividing the semiconductor wafer into individual semiconductor chips on the surface of the semiconductor wafer;
A step of attaching a protective sheet to the surface of the semiconductor wafer in which the cuts are formed;
The adhesive according to claim 8, further comprising: grinding the back surface of the semiconductor wafer to which the protective sheet is attached, dividing the semiconductor wafer into individual semiconductor chips, and obtaining the stacked body. Manufacturing method of semiconductor chip with layer. Using the dicing die-bonding tape according to any one of claims 1 to 7 and a semiconductor wafer,
Bonding the adhesive layer of the dicing die-bonding tape to the semiconductor wafer;
Dicing the semiconductor wafer and the adhesive layer;
A semiconductor with an adhesive layer, comprising: after dicing, peeling the adhesive layer to which the semiconductor chip is attached from the non-adhesive layer and taking out the semiconductor chip together with the adhesive layer. Chip manufacturing method.

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