KR101632504B1 - method for the fabrication of nanostructures based on adhesion control using solvent vapor and nanotransfer printing using the same - Google Patents
method for the fabrication of nanostructures based on adhesion control using solvent vapor and nanotransfer printing using the same Download PDFInfo
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- KR101632504B1 KR101632504B1 KR1020140159159A KR20140159159A KR101632504B1 KR 101632504 B1 KR101632504 B1 KR 101632504B1 KR 1020140159159 A KR1020140159159 A KR 1020140159159A KR 20140159159 A KR20140159159 A KR 20140159159A KR 101632504 B1 KR101632504 B1 KR 101632504B1
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Abstract
Coating a polymer thin film on a patterned template substrate; Attaching an adhesive film to the polymer thin film and removing the polymer thin film from the template substrate to produce the polymer thin film as a duplicate thin film mold; Depositing a functional material on the duplicate thin film mold to form a nanostructure; And selectively weakening the adhesive force between the adhesive film and the duplicate thin film mold using an organic solvent vapor.
Description
The present invention relates to a nanotransfer printing method capable of resolving a resolution of 20 nm or less and a method of manufacturing a nanopattern using the same. More particularly, the present invention relates to a nanoporous printing method using a polymer thin film, Nano-transfer printing using an organic solvent vapor capable of transferring the nanostructure onto various substrates without controlling the adhesion of the polymer film by controlling the adhesive force between the polymer films using the organic solvent vapor, and a method for manufacturing the nanostructure using the same .
Next-generation transistors, sensors, memories, nanowires, and other high-performance nano-devices have high future potential due to their outstanding performance and utilization. In this next-generation nano device, its core material is nanomaterials such as nanoparticles, nanowires, and nanoribbons that exhibit physical properties and high functionality that can not be seen in conventional bulk materials. Ultrafine nano fabrication technology is regarded as an essential technology for the fabrication of these high performance next generation nano devices.
Of the various nano fabrication technologies that have been developed so far, nano-transcription printing technology using elastic molds can easily fabricate nanostructures of functional materials with a low-cost and simple process, and it has excellent mass productivity and shows great future potential as a next generation nano fabrication technology. Giving. A nanostructure of a functional material such as a metal, a semiconductor and the like can be easily fabricated, and the nanostructure can be arranged in a two-dimensional or three-dimensional manner. Particularly, in a conventional patterning technology, It is expected to be particularly useful for the production of flexible devices which have recently come into the limelight, and it is expected that they can be applied to various fields.
If the resolution of such a nano transfer printing technique can be improved to 10 nm or less, a high-performance electronic device can be fabricated by a simple and low-cost process, and a quantum effect in a nano-sized nano structure can be utilized, It is expected that it will be possible to develop a new high-performance nano device that can overcome existing electronic devices.
Conventional nano transfer printing technology forms a nanostructure by using an elastic mold such as PDMS (polydimethylsiloxane) in which nanoparticles are formed on the surface through molding and depositing a functional material on the surface. However, when printing is performed by such a method, if the pattern size of the mold becomes smaller than 100 nm, the mold tends to collapse or deform in the printing process. In addition, when the pattern size is reduced to 100 nm or less in the fabrication of the silicon master substrate for the production of the polymer-based elastic mold, the replica resolution of the elastic mold is not sufficient to replicate the surface pattern.
For this reason, the resolution of nanotransfer printing reported to date is relatively large, about 50 nm. In the case of the conventional method, the functional material is directly deposited on the elastic mold, and the formed nanostructure is transferred on another substrate by a contact method. At this time, since the adhesion force between the nanostructure and the elastic mold is relatively large, There has been a problem that printing is not performed. To solve this problem, it is possible to introduce additional processes such as heat treatment, surface oxidation treatment, self-assembled monolayer treatment, and liquid crosslinking, but this complicates the entire printing process and limits the applicable substrate I have been.
For this reason, it is urgent to develop a new nano-transfer printing capable of printing with a high resolution of 20 nm or less and without any pretreatment on various substrates.
SUMMARY OF THE INVENTION In order to solve the above-described problems, a problem to be solved by the present invention is to provide a surface pattern replication method using a polymer thin film capable of improving the resolution of a nano transfer printing technique and realizing high efficiency transfer printing without a pre- A transfer printing method using adhesion control method using steam, and a method of manufacturing a nano structure using the same.
According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: coating a polymer thin film on a template substrate on which a pattern is formed; Attaching an adhesive film to the polymer thin film and removing the polymer thin film from the template substrate to produce the polymer thin film as a duplicate thin film mold; Depositing a functional material on the duplicate thin film mold to form a nanostructure; And selectively weakening an adhesive force between the adhesive film and the duplicate thin film mold by using an organic solvent vapor. The present invention also provides a method of manufacturing a nanostructure.
According to an embodiment of the present invention, the step of forming the nanostructure by depositing the functional material may be performed by an inclined deposition method. The template substrate may be formed by photolithography, block copolymer self-assembly based lithography, E-beam lithography And a surface pattern of a concavo-convex shape is formed by performing surface etching by RIE (reactive ion etching) process.
According to an embodiment of the present invention, the surface pattern of the template substrate has a width of 1 nm to 1 cm and a depth of 1 nm to 1 cm. The surface energy of the trench substrate has a surface energy of 30 mJ / m 2 or less .
According to an embodiment of the present invention, the step of coating the polymer thin film on the template substrate having the surface irregularity pattern may have a solubility parameter value of 20 to 40 MPa 1/2 and a glass transition temperature of
According to an embodiment of the present invention, the step of coating the polymer thin film on the template substrate having the surface irregularity pattern may include spin coating, deep coating, and spray coating To form a thin film.
According to an embodiment of the present invention, the step of coating the polymer thin film may be performed by applying a thin film as a single layer, or by applying a first thin film and then sequentially applying a second thin film, The step of preparing the duplicate thin film mold by peeling the thin film proceeds with the duplicate elastic mold attached to the adhesive film by uniformly attaching and peeling the adhesive film.
According to an embodiment of the present invention, in the step of forming the functional nanostructure by the tilted deposition method, the mold is tilted so that the deposition direction and the deposition direction are at an angle with respect to each other, To form a nanostructure.
According to an embodiment of the present invention, the step of forming the functional nanostructure by the tilted deposition is a metal, a semiconductor, and an insulating nanostructure depending on a source material used in a deposition process.
According to an embodiment of the present invention, the step of weakening the adhesive force between the thin film mold and the adhesive film using the organic solvent vapor may include injecting the organic solvent vapor between the adhesive film and the duplicate thin film mold to reduce the separation energy between the interfaces .
According to an embodiment of the present invention, the step of weakening the adhesive force between the thin film mold and the adhesive film using the organic solvent vapor includes contacting the polymer pad containing the organic solvent with the duplicate thin film mold, To provide and vaporize the vaporized vapor.
According to an embodiment of the present invention, a method of introducing an organic solvent by contacting a polymer pad containing an organic solvent with a duplicate thin film mold includes using a polymer pad that expands by an organic solvent to absorb an organic solvent, The polymer pad is prepared using a crosslinked polymer having a solubility parameter ranging from 10 to 40 MPa < 1/2 > depending on the kind of the organic solvent.
According to an embodiment of the present invention, the polymer pad on which the organic solvent is absorbed is absorbed by immersing the polymer pad in the organic solvent and is expanded to a saturation expansion ratio, and the organic solvent is absorbed by the polymer constituting the duplicate thin film mold Lt; RTI ID = 0.0 > solubility < / RTI >
According to one embodiment of the present invention, the organic solvent uses an organic solvent having a solubility parameter that is similar to the solubility parameter of the polymer constituting the adhesive film.
According to one embodiment of the present invention, the organic solvent is a single solvent or a mixed solvent containing two or more components.
The present invention provides a nanostructure produced by the above-described method for producing a nanostructure.
According to an embodiment of the present invention, there is provided a method of fabricating a nanostructure, And transferring the prepared nanostructure onto a substrate.
According to an embodiment of the present invention, the step of transferring the nanostructure onto a substrate includes contacting the duplicate thin film mold having the nanostructure formed thereon with the adhesive film such that the nanostructure and the polymer pad are in contact with each other, ; The present invention also provides a nano-transfer printing method for transferring the nanostructure onto a substrate by bringing the polymer pad into contact with the substrate uniformly so that the nanostructure and the substrate are in contact with each other and then peeling off.
According to an embodiment of the present invention, the nano-transfer printing method comprises: a step of removing a duplicate thin film mold having the nanostructure formed thereon and an adhesive film by contacting the nanostructure with a polymer pad after a predetermined time, Removing the duplicate thin film mold using the substrate, wherein the substrate is made of one of metal, oxide, semiconductor and polymer.
According to the present invention, it is possible to reproduce surface patterns and nanostructures of 20 nm or less (minimum size 9 nm) through a polymer thin film coating. By introducing an adhesion control method using an organic solvent vapor, nanostructure formation As well as new nano transcription printing technology. The nano transfer printing method according to one embodiment of the present invention is capable of replicating ultrafine pattern of a size of 10 nm or less by coating a polymer thin film and replicating a surface pattern of a template substrate, It is possible. In addition, adhesion control using an organic solvent vapor can form a nanostructure on various substrates without additional pretreatment such as heat treatment, surface oxidation treatment, self-assembled monolayer, and liquid crosslinking.
Furthermore, transfer printing is possible regardless of the physical properties of the substrate such as an oxide, a metal, and a polymer substrate, and a nanostructure can be formed on a substrate such as a flexible, curved substrate or a substrate having concave and convex portions. It also has the advantage that three-dimensional nanostructures can be formed through continuous printing.
The technology proposed in the present invention is a low-cost, high-resolution, large-area nano-transfer printing technique with a resolution of 20 nm or less. When applied to manufacturing electronic equipment using printing, And the like.
1 is a schematic view illustrating a nano-transfer printing method according to an exemplary embodiment of the present invention.
Figure 2 is a SEM image of a linear pattern of 14 nm line width fabricated by performing block copolymer self-assembly based lithography and RIE processes.
3 is a SEM photograph of a linear pattern of 8 nm line width fabricated in the same manner as described above.
4 is a schematic diagram of a process for producing a duplicate thin film mold in the one-step process of the present invention.
5 and 6 are SEM photographs showing a linear pattern of 20 nm and 9 nm line widths of the duplicate thin film mold surface formed from a template having a linear pattern of line widths of 14 nm and 8 nm, respectively.
FIG. 7 shows optical and SEM photographs of a linear pattern of several hundred nanometer line widths and several micrometer line widths formed by general photolithography, and a duplicate thin film mold surface pattern duplicated thereon.
8 is a schematic view of an inclined deposition method in a one-step process of the present invention.
9 is a surface optical photograph and a SEM photograph of a gold nanowire with a 20 nm line width formed by deposition on a duplicate thin film mold separated by an adhesive film.
10 is a schematic diagram showing the weight change rate (M / Mo) with time at each temperature condition when a PDMS pad is immersed in toluene as a solvent.
11 is an optical photograph of a thin film of a nanostructure transferred from an adhesive film to a PDMS pad.
12 is an optical and SEM photograph of a gold nanowire thin film transferred onto a silicon wafer according to
13 is a SEM photograph of the surface of 20 nm diameter Al, Cu, Ag, and Co nanowires transferred onto a silicon wafer by the S-nTP process, respectively.
14 is a SEM photograph of a surface of a Cr nanowire having a 9 nm line width formed using the template shown in FIG. 3 and transferred onto a silicon wafer.
15 is a GISAXS pattern image measured with an Al nanowire thin film of 20 nm line width transferred onto a silicon wafer by the S-nTP method.
16 is a schematic diagram of a method for providing a vapor from an organic solvent.
17 is a SEM photograph of a Cr wire thin film transferred onto a silicon wafer according to
18 to 24 are optical photographs and SEM photographs showing that nanostructures are formed on the various kinds of substrates by the S-nTP method.
FIG. 18 is an optical and SEM photograph of gold nanowires formed in a cylindrical glass bottle. FIG.
Figure 19 is an optical and SEM photograph of a gold nano wire formed on a human nail.
Figure 20 is an optical and SEM image of gold nanowires formed on a human wrist.
Figure 21 is an optical and SEM image of gold nanowires formed on the surface of fruit (apple).
FIG. 22 is an optical and SEM image of gold nanowires formed on a 7 μm thick PET substrate.
Fig. 23 is an optical and SEM photograph of gold nanowires formed on a silicon substrate having a trench-like concavo-convex pattern. Fig.
Figure 24 is an optical and SEM image of gold nanowires formed on a shrinkage film.
25 is a SEM photograph showing various structures of a nanostructure formed by a continuous process.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. Like reference numerals and like-like patterns throughout the specification denote like elements.
The present invention can produce ultrafine nanostructures at a level of 10 nm or less by replicating a surface pattern through a polymer thin film coating, and is capable of easily transferring a nanostructure onto various surfaces using a rising solvent vapor. It is to realize.
One embodiment of the present invention provides a method of manufacturing a semiconductor device, comprising: fabricating a template substrate using a lithography technique; Coating the polymer thin film and peeling the duplicate thin film with an adhesive film; Depositing a functional material to form a functional nanostructure; applying an organic solvent vapor to attenuate the adhesion between the thin film mold and the adhesive film; And transferring the nanostructure onto various substrates.
1 is a schematic view illustrating a nano-transfer printing method according to an exemplary embodiment of the present invention. Hereinafter, a nano-transfer printing method for forming a nanostructure having a size of 20 nm or less will be described with reference to FIG.
The solvent-vapor-injection nanotransfer printing (S-nTP) process using an organic solvent vapor according to an embodiment of the present invention is a two-step continuous process. In the first step, a polymer film is coated on a template substrate having a surface relief pattern and then peeled off using an adhesive film to form a duplicate thin film mold, and a functional material is deposited on the surface of the thin film mold to form a nanostructure The second step is to transfer the nanostructure onto various substrates by selectively reducing the adhesion between the two polymer films by providing an organic solvent vapor at the interface between the adhesive film and the replication thin film mold (step 2).
The template substrate according to an exemplary embodiment of the present invention forms a desired size pattern on a substrate such as a silicon wafer by using a patterning process such as photolithography, block copolymer self-assembly based lithography, or E-beam lithography And a surface etching is performed by a reactive ion etching (RIE) process.
In one embodiment of the present invention, a template substrate is fabricated on a silicon wafer using a block copolymer self-assembly based lithography technique to form ultrafine patterns of 20 nm or less. FIGS. 2 and 3 show the results of self-assembly of a PS-PDMS (poly (stryene-b-dimethylsiloxane)) block copolymer in a 1 μm wide silicon trench substrate to form a linear pattern, 14 is an SEM photograph of a linear pattern of concavo-convex shape with a line width of 8 nm and a width of 8 nm.
FIG. 7 is an optical and SEM of a template surface having a line pattern of several hundred nm line width and several μm line width formed by general photolithography. In addition to the linear patterns shown in the embodiment of the present invention, patterns of various shapes such as dots and hole patterns can be formed through a conventional photolithography process or a self-assembly process of a block copolymer and can be used as templates for duplication in the present invention.
The surface of the template substrate fabricated by the series of processes is treated with hydrophobic SAM coating such as PDMS brush polymer or HMDS having a low surface energy to have a low surface energy of less than 30 mJ / m 2 . This is for later removal of the duplicate thin film mold from the template, and once treated hydrophobic surfaces do not require semi-permanent reprocessing.
In the first step according to an embodiment of the present invention, in order to form a duplicate thin film mold, a polymer thin film is formed on a template substrate by spin coating, deep coating, spray coating, or the like Method. In this case, the solubility parameter of the applied polymer may have a value of 20 to 40 MPa 1/2 , and the glass transition temperature of the polymer is higher than the room temperature (25 ° C) to maintain a solid state at room temperature .
In an embodiment of the present invention, a single layer film of PS (toluene solution) or PMMA (toluene and acetone mixed solution) is applied or a thin film of P4VP (IPA solution) is first applied as shown in FIG. 4, The PMMA thin film is applied to form a P4VP-PS or P4VP-PMMA multilayer thin film. Polymer thin films can replicate the nanopattern of the template surface with a resolution of 10 nm or less during the application process, and can easily form a duplicate thin film mold by attaching the adhesive film on the thin film and removing it.
Figures 5 and 6 are SEM images showing a linear pattern of 20 nm and 9 nm line widths of the duplicate thin film mold surface formed from a template having a linear pattern of line widths of 14 nm and 8 nm, respectively. In the above-mentioned series of processes, the polymer thin film is coated to produce a duplicate thin film mold, which can greatly reduce the material cost for the mold production and does not require strong pressure, tension or heat treatment in the replication process. It is possible.
E-beam or thermal evaporation deposition technique is used to form the nanostructure on the duplicate thin film mold. Especially, the nanostructure is formed by using the tilted deposition method in which the substance is deposited only on the portion derived from the surface.
As shown in FIG. 8, the inclined deposition method according to an embodiment of the present invention is a method of inclining a mold by inclining the mold so that the deposition surface and the deposition direction have a certain angle. By the inclined deposition method, a nanostructure having the same size as the surface pattern can be formed without a separate lift-off process.
It is possible to manufacture semiconductor and insulator nanostructures from metal nanostructures such as Au, Ag, Cu, Ni, Pt, Cr, Co and Pd depending on the source material used in the deposition process.
FIG. 9 is a surface optical photograph and a SEM photograph of a gold nanowire with a 20 nm line width formed by depositing 15 nm of gold on a duplicate thin film mold separated by an adhesive tape by E-beam evaporation.
The formed nanostructure is present on the duplicate thin film mold on the adhesive film and can be transferred to various substrates to be used for subsequent device fabrication. In the nano-transfer printing technique of the present invention, organic solvent vapor is provided to induce selective interface separation, thereby transferring the nanostructure to a substrate. (The second step process of the process (S-nTP process) according to the present invention).
In one embodiment of the present invention, the solubility parameter of the organic solvent and the solubility parameter of the polymer constituting the duplicate thin film mold are preferably similar, and the difference is preferably within 10 MPa 1/2 . If the difference in the solubility parameter exceeds the above value, the weakening of the adhesion by the organic solvent may not be sufficient.
In
In the case of the method of providing steam using the polymer pad containing an organic solvent in the second step of the S-nTP process (Method 1), the polymer pad for transfer printing containing the organic solvent may be used in accordance with the kind of the organic solvent The solubility parameter is in the range of 10 to 40 MPa < 1/2 & gt ;, and the solubility parameter difference with the organic solvent is preferably within 10 MPa < 1/2 >
The transfer printing pad according to an embodiment of the present invention is a flat PDMS pad having a thickness of 0.5 to 2 cm. The PDMS pad is prepared by placing a mixture of a precursor and a curing agent on a silicon wafer, The pads made by the above method expand while containing an organic solvent in a liquid organic solvent. The step of swelling the transfer printing pad containing an organic solvent in an organic solvent may be carried out in a mixed solution of a pure organic solvent and two or more isotonic solvents.
In one embodiment of the present invention, a PDMS pad which is a transfer printing pad is immersed in toluene to expand it.
10 shows the weight change rate (M / Mo) with time at each temperature condition when a PDMS pad as an annealing pad is immersed in toluene as a solvent.
Referring to FIG. 10, within about 6 hours at room temperature, the PDMS pad no longer increases in weight as it reaches the saturation expansion rate. Under these conditions, the chemical potential of the solvent molecules is equal to the saturated vapor pressure of the pure liquid, since the vapor pressure in the saturated expanded pad is eventually equal to that of the pure liquid in the pure liquid phase. Accordingly, the PDMS pad containing the organic solvent continuously discharges a high-flow solvent vapor.
In the second step of S-nTP, when the two-step process of S-nTP is carried out by using the
11 is an optical photograph of a nanostructure thin film transferred from a bonding film to a PDMS pad.
The duplicate thin film mold can be easily removed by washing it with an organic solvent before or after the transfer of the nanostructure according to the transfer method. The PS, PMMA, and P4VP thin films used in one embodiment of the present invention are removed using toluene, acetone, and IPA solvents, respectively, and in the case of the multi-layer thin films, the outer polymer thin films are sequentially removed.
When the PDMS pad transferred to the surface of the nanostructure is brought into contact with the target substrate and the pad is detached within a short period of time, the nanostructure can be transferred onto the substrate. The nanostructure can be easily transferred by contacting it on a target substrate for 1 to 5 seconds.
12 is an optical and SEM photograph of a gold nanowire thin film transferred onto a silicon wafer according to the
13 is a SEM photograph of the surface of 20 nm diameter Al, Cu, Ag, and Co nano-nano wires transferred onto a silicon wafer by the S-nTP process, respectively.
14 shows a surface SEM photograph of a Cr nanowire of 9 nm line width formed on a silicon wafer using a linear pattern template of 8 nm line width shown in FIG.
FIG. 15 is a GISAXS (Grazing Incident Small Angle X-ray Spectroscopy) pattern image measured with an Al nanowire thin film of 20 nm line width transferred onto a silicon wafer by the S-nTP method and shows an excellent large area alignment.
The area of the nanostructure thin film transferred to the series of processes is the same as the area of the template substrate, and it is possible to form and print a large-area nanowire thin film by increasing the size of the template substrate.
In the case of the method of providing the vapor from the organic solvent in the second step of the S-nTP process (Method 2), as schematically shown in FIG. 16, an organic solvent is filled in a chamber manufactured according to the area of the duplicate thin film mold, The lid (the ceiling of the chamber) may be provided with vaporized vapor from the organic solvent in an enclosed chamber by attaching an adhesive film so that the duplicate thin film faces down and closing the lid. After providing the organic solvent vapor for a certain period of time, the lid of the chamber is opened and the adhesive film is removed.
Since the duplicate thin film is brought into contact with the target substrate and the adhesive film is peeled off in a short time, the organic solvent vapor selectively reduces the adhesive force between the adhesive film and the duplicate thin film mold, so that only the nanostructure and the duplicate thin film mold are transferred . The nanostructure can be easily transferred by contacting it on a target substrate for 1 to 5 seconds as in
17 is an SEM photograph of a Cr wire thin film transferred onto a silicon wafer according to the
As described above, according to the present invention, ultrafine pattern replication with a size of 10 nm or less can be performed by coating the surface of the template substrate by coating a polymer thin film, and the resolution of the nano transfer printing technique can be greatly improved to 10 nm or less. In addition, adhesion control using an organic solvent vapor can transfer the nanostructure onto various substrates without additional pretreatment such as heat treatment, surface oxidation treatment, self-assembled monolayer, and liquid crosslinking. Transfer printing can be performed regardless of the physical properties of the substrate such as oxide, metal, and polymer substrate, and patterns can be formed on various substrates such as flexible, curved substrates or concavo-convex substrates.
18 to 24 are optical photographs and SEM photographs showing formation of nanostructures on various kinds of substrates by the method according to the present invention (S-nTP method).
Fig. 18 is a graph showing the results of measurement on the surface of a fruit (apple), Fig. 22 on a PET substrate having a thickness of 7 mu m, on the human nail, Fig. 20 on a human wrist, Fig. 24 is an optical and SEM photograph of a gold nanowire formed on a shrinkage film on a silicon substrate having a trench-like concavo-convex pattern.
The technique proposed in the present invention is advantageous in that printing can be performed without the need for pretreatment and a three-dimensional nanostructure can be formed through continuous printing because it is a transfer principle due to control of adhesive force by an organic solvent vapor. The first nanostructure is formed on the substrate by the method described in Fig. Then, the method described in FIG. 1 is further performed successively on the substrate on which the nanostructure is formed to form a second nanostructure crossing the first nanostructure. At this time, by adjusting the printing angle, it is possible to form a structure in which the nanostructures cross each other at various angles. As shown in the SEM photograph of FIG. 25, it can be seen that the nanostructures are formed through the continuous process according to the present embodiment, and various structures in which the gold nanowires intersect each other are formed.
It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims. It will be possible.
Claims (20)
Attaching an adhesive film to the polymer thin film and removing the polymer thin film from the template substrate to produce the polymer thin film as a duplicate thin film mold;
Depositing a functional material on the duplicate thin film mold to form a nanostructure;
And selectively weakening an adhesive force between the adhesive film and the duplicate thin film mold using an organic solvent vapor.
Wherein the step of depositing the functional material to form the nanostructure is performed by an inclined deposition method.
The template substrate may be patterned to a desired size using at least one patterning process selected from the group consisting of photolithography, block copolymer self-assembly-based lithography, and E-beam lithography, and may be formed by a reactive ion etching And a surface pattern of a concave-convex shape is formed by progressing the surface etching.
Wherein a surface pattern width of the template substrate is 1 nm to 1 cm and a depth is 1 nm to 1 cm.
Wherein a surface energy of the surface of the template substrate is a surface energy of 30 mJ / m 2 or less.
The step of coating the polymer thin film on the template substrate having the surface pattern of the concave-
A polymer having a solubility parameter value of 20 to 40 MPa < 1/2 > and a glass transition temperature higher than room temperature (25 DEG C).
The coating of the polymer thin film may include:
Layer thin film, or applying a first thin film and then sequentially applying a second thin film to form a multilayer thin film.
The step of preparing the duplicate thin film mold by peeling the polymer thin film with the adhesive film comprises:
Wherein the adhesive film is uniformly adhered to one surface of the polymer thin film and is detached from the template substrate so that the adhesive thin film is adhered to the duplicate thin film mold.
The step of forming the functional nanostructure by the deposition by the tilt deposition method includes:
A method for fabricating a nanostructure, comprising: forming a nanostructure by depositing a material by inclining a mold so that the surface of the mold on which the deposition is performed is at an angle with respect to the direction of deposition;
The step of attenuating the adhesion between the duplicate thin film mold-adhesive film using the organic solvent vapor comprises:
Wherein the organic solvent vapor is injected between the adhesive film and the duplicate thin film mold to reduce separation energy between the interfaces.
The step of attenuating the adhesion between the duplicate thin film mold-adhesive film using the organic solvent vapor comprises:
A method of manufacturing a nanostructure, comprising contacting a polymer pad containing an organic solvent with a duplicate thin film mold, or supplying vaporized vapor from an organic solvent in a liquid state to inject.
The method of contacting an organic solvent-containing polymer pad with a duplicate thin film mold and injecting an organic solvent,
A method for fabricating a nanostructure using a polymer pad that expands by an organic solvent to absorb an organic solvent.
The polymer pad may be,
Wherein the solubility parameter is in the range of 10 to 40 MPa < 1/2 > depending on the kind of the organic solvent.
Wherein the polymer pad on which the organic solvent is absorbed is absorbed by immersing the polymer pad in the organic solvent and is expanded to a saturation expansion ratio.
Wherein the difference between the solubility parameter of the organic solvent and the solubility parameter of the polymer constituting the duplicate thin film mold is within 10 MPa 1/2 .
Wherein the difference between the solubility parameter of the organic solvent and the solubility parameter of the polymer constituting the adhesive film is within 10 MPa 1/2 .
And transferring the prepared nanostructure onto a substrate.
The step of transferring the nanostructure to a substrate includes:
Contacting the duplicate thin film mold having the nanostructure formed thereon with the adhesive film so that the nanostructure and the polymer pad are in contact with each other;
Wherein the nano structure is transferred onto a substrate by contacting the polymer pad uniformly on the substrate so that the nano structure and the substrate are in contact with each other and then peeling off the substrate.
The duplicate thin film mold having the nanostructure formed thereon and the adhesive film are separated from each other after a predetermined time after bringing the nanostructure into contact with the polymer pad,
Further comprising the step of removing the duplicate thin film mold using an organic solvent.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
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| US14/884,529 US10507604B2 (en) | 2014-10-29 | 2015-10-15 | Nanotransfer printing method and surface-enhanced raman scattering substrate, surface-enhanced raman scattering vial and surface-enhanced raman scattering patch manufactured using the same |
| PCT/KR2015/011082 WO2016068538A1 (en) | 2014-10-29 | 2015-10-20 | Nanotransfer printing method and sers substrate, sers vial, and sers patch manufactured using same |
| EP15191672.3A EP3015918B1 (en) | 2014-10-29 | 2015-10-27 | Nanotransfer printing method and surface-enhanced raman scattering substrate |
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| KR20140148502 | 2014-10-29 | ||
| KR1020140148502 | 2014-10-29 |
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| KR20180075310A (en) * | 2016-12-26 | 2018-07-04 | 주식회사 엘지화학 | Method of transferring micro electronic device |
| KR102014103B1 (en) * | 2017-12-20 | 2019-08-26 | 한국세라믹기술원 | Self-assembly pattern and fabricating method of the same |
| KR102203640B1 (en) * | 2018-08-28 | 2021-01-15 | 한국과학기술원 | Three-Dimensional Nanostructure Metal Catalyst for Carbon Dioxide Reduction and manufacturing method thereof |
| KR102186501B1 (en) * | 2018-11-16 | 2020-12-03 | 한국세라믹기술원 | Large area thermal assist pattern transfer printing method |
| KR102267904B1 (en) * | 2020-04-01 | 2021-06-22 | 한국기계연구원 | Method for transferring nano/micro-structures using glass transition temperature and a microstructure device manufactured using the same |
| KR102272906B1 (en) * | 2020-04-03 | 2021-07-05 | 한국과학기술원 | Nano pattern transfer method using water-soluble polymer and template for nano pattern transfer |
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