KR20130138877A - Method for manufacturing pattern, pattern manufactured by the same and application using the same - Google Patents
Method for manufacturing pattern, pattern manufactured by the same and application using the same Download PDFInfo
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- KR20130138877A KR20130138877A KR1020120061922A KR20120061922A KR20130138877A KR 20130138877 A KR20130138877 A KR 20130138877A KR 1020120061922 A KR1020120061922 A KR 1020120061922A KR 20120061922 A KR20120061922 A KR 20120061922A KR 20130138877 A KR20130138877 A KR 20130138877A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
Description
The present invention relates to a pattern manufacturing method using a transfer layer, and more particularly, by transferring using a transfer layer formed between the substrate and the pattern layer is a pattern is produced, the pattern can be formed without limitation of the type and shape of the substrate It relates to a pattern manufacturing method using a transfer layer.
As semiconductors and sensors become more precise, manufacturing of more precise patterns (structures) is required. However, the substrate on which this pattern is made must be flat and able to withstand high temperature semiconductor processes. Therefore, there is a problem that the pattern manufacturing method currently manufactured is used after being manufactured on a flat, rigid substrate such as silicon.
On the other hand, the self-assembly method of the block copolymer (BCP) generates a dense, periodically aligned nano-region, the size is fine to 3nm level. Such self-assembly in thin films can planet two-dimensional lithography nanotemplates, whose pattern accuracy is difficult to achieve otherwise.
Significant advances in integrated synthesis of block copolymer self-assembly through e-beam lithography and ArF or other photolithography processes have shown that self-assembly based on nanopatterns overcomes the limitations of conventional lithography processes. It is an alternative technology that can be done. On the other hand, BCP self-assembled nanopatterns were considered particularly suitable for rigid and flat inorganic substates. However, the conventional method of forming a uniform thickness thin film (typically less than 100 nm) of BCP film by spincasting followed by thermal / solvent annealing is a flexible polymer substrate having a three-dimensional structure or low chemical / thermal stability. It is not suitable for use, and furthermore, it is considered to be unsuitable even if it has surface roughness of nano size or more.
Accordingly, the problem to be solved by the present invention is to provide a technique that can produce a pattern without limitations of the type and shape of the substrate, and to apply the pattern.
In order to solve the above problems, the present invention comprises the steps of forming a transfer layer on the first substrate; And it provides a pattern manufacturing method comprising the step of forming a pattern layer on the formed transfer layer.
In one embodiment of the present invention, the transfer layer has a flexible two-dimensional structure, the transfer layer may include any one of a graphene film, an organic-inorganic clay structure film, CN nanosheets and MOS2 nanosheets. .
In one embodiment of the present invention, the pattern layer is a nanopattern patterned by self-assembly or lithography.
In one embodiment of the present invention, the pattern manufacturing method comprises the steps of: separating the transfer layer from the first substrate; And transferring the separated transfer layer to a second substrate.
In one embodiment of the present invention, the second substrate includes any one of a flexible substrate, a non-flat substrate, a polymer substrate.
In an embodiment of the present disclosure, the forming of the pattern layer may include stacking a block copolymer on the transfer layer; Self-assembling the laminated block copolymer; And
Etching and patterning the self-assembled block copolymer.
In one embodiment of the present invention, the pattern manufacturing method, after laminating the transfer layer on the first substrate, further comprising the step of adjusting the surface energy of the transfer layer.
In one embodiment of the present invention, the oxygen functional group is bonded to the surface of the transfer layer, the step of controlling the surface energy of the transfer layer proceeds in a manner to reduce the oxygen functional group.
The present invention provides a pattern manufactured in the above-described manner, in order to solve the another problem.
In accordance with another aspect of the present invention, a nanostructure is formed on the transfer layer by using the pattern formed on the first substrate as a template by the above-described method; And separating the transfer layer from the first substrate. And
It provides a nanostructure manufacturing method comprising the step of transferring the separated transfer layer to a second substrate.
In one embodiment of the present invention, the substrate includes any one of a flexible substrate, a non-flat substrate, a polymer substrate.
In one embodiment of the invention, the nanostructures are nanodots, nanorods, or nanowires.
The present invention to solve another problem, the nanopattern manufacturing method, the nanopattern manufacturing method, the step of laminating a chemically modified graphene layer on the first substrate; Stacking a block copolymer on the chemically modified graphene layer; Self-assembling the laminated block copolymer; Patterning the self-assembled block copolymer; Separating the graphene layer from the first substrate; And it provides a nano-pattern manufacturing method comprising the step of transferring the separated graphene layer to another second substrate.
In one embodiment of the invention, the step of self-assembling the block copolymer is carried out in a thermal or solvent annealing manner.
In one embodiment of the present invention, the step of patterning the self-assembled block copolymer, proceeds in a manner to selectively remove some of the polymer of the self-assembled block copolymer.
In one embodiment of the present invention, the nanopattern manufacturing method, after spin-casting the graphene oxide on a substrate, by reducing the graphene oxide, controlling the surface energy of the chemically modified graphene layer It further includes.
The present invention also provides a method for manufacturing a nano template, comprising the steps of laminating a chemically modified graphene layer on a first substrate; Stacking a block copolymer on the chemically modified graphene layer; Self-assembling the laminated block copolymer; Selectively etching and patterning the self-assembled block copolymer to partially expose the chemically modified graphene layer; Stacking a mold material on the patterned block copolymer; Removing the patterned block copolymer; And separating the graphene layer from the first substrate, transferring it to another second substrate, and manufacturing a mold stacked on the second substrate.
In one embodiment of the invention, the template material is bonded to the chemically modified graphene layer in the form of a cylinder or line.
According to the present invention, a two-dimensional transfer layer is formed on a substrate on which the original pattern is made, and the transfer layer is separated from the substrate on which the pattern is made, and transferred to another substrate. Therefore, a pattern can also be formed and manufactured by a transfer method on a flexible substrate, a non-flat substrate, and a polymer substrate. Furthermore, in one embodiment of the present invention, in order to overcome the substrate limitations in manufacturing a conventional block copolymer self-assembly-based nanostructure, a two-dimensional sheet (film) as a transfer layer between the substrate and the block copolymer Insert it. As a result, it is possible to manufacture nanopattern structures using block copolymers for non-flat substrates, flexible substrates, and the like, and also to use nanopatterns according to the present invention, and to manufacture nano-moulds that can be applied to substrates such as PDMS in fine sizes. .
1 is an image and diagram illustrating self-assembled nanopatterning according to the present invention for an uneven surface.
2 is an image and diagram illustrating self-assembled nanopatterning according to the present invention for a flexible substrate.
3 is a randomized array of gold nanowire images and diagrams formed through repeated self-assembled nanopatterning twice.
FIG. 4 is an image and diagram of a nanowire crossbar array and nanopost array formed through repeated self-assembly twice.
Hereinafter, the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms.
The present invention, in order to solve the above-mentioned problems of the prior art, a substrate (hereinafter referred to as a first substrate) and a pattern layer (hereinafter referred to as the first substrate) to which the pattern is first formed, this means a thin film that is a pattern is formed, and physically separated from the substrate Inserting another transfer layer (this means a functional layer which is separated from the first substrate and which maintains the pattern layer bonded to the top even when separated), thereby inserting the pattern layer from the first substrate. It is easily separated without physical deformation and transferred to a desired substrate (hereinafter referred to as a second substrate). This allows a pattern to be formed in the form of a second substrate-transfer layer-pattern, wherein the transfer layer physically supports the pattern layer upon separation of the pattern layer, and furthermore, is sufficient for the second substrate upon transfer to the second substrate. Provide physical bonding.
Figure 1a is a step diagram of a pattern manufacturing method according to an embodiment of the present invention.
Referring to FIG. 1A, first, a transfer layer is formed on a first substrate, and a pattern layer is formed on the formed transfer layer. In one embodiment of the invention the transfer layer is a layer having a flexible two-dimensional structure of the transfer layer, preferably has chemical resistance, can withstand the pattern manufacturing process, and after being separated from the first substrate It has a stable two-dimensional structure. In this case, flexible means a property that can be bent, and includes everything from a fully folded structure to a structure that can bend to several nanometers. In addition, in one embodiment of the present invention, although a chemically modified graphene film was used as the transfer layer, the scope of the present invention is not limited thereto, and the organic-inorganic clay structure film having a two-dimensional structure, CN nanosheets, MOS 2 (molybdenum disulfide) nanosheets and the like may also be used, all of which have a flexible property that can maintain a stable pattern even on substrates that are bent after transfer or non-flat substrates.
The pattern layer may be a nanopattern patterned by self-assembly or lithography, and the transfer layer may provide sufficient bonding force with the pattern layer in manufacturing the pattern layer. For example, in one embodiment of the present invention, graphene, which is a transfer layer, forms sufficient pi-pie conjugation with an aromatic group or the like of the pattern layer, thereby providing sufficient adhesion to the pattern layer (the pattern layer is not separated during the transfer process). Level).
Thereafter, the transfer layer is separated from the first substrate, and the separated pattern is transferred to another second substrate. The separating of the transfer layer into the first substrate may be performed by, for example, etching or removing the first substrate or using a transfer substrate such as a lift-off method or a PDMS. The separation step can proceed in various ways used.
After separation, the bilayer consisting of the transfer layer-pattern layer is transferred to the second substrate in a mechanical manner, thereby producing a pattern structure of the second substrate-transfer layer-pattern layer.
In one embodiment of the present invention, after the transfer layer is separated, even if the pattern layer is a thin film, it is possible to maintain a stable physical / mechanical state, and also provide sufficient bonding force with the second substrate after transfer.
One embodiment of the present invention provides a method for transferring the pattern layer to the second substrate, yet another embodiment of the present invention using a pattern formed on the first substrate, the structure (for example, nanowire, Nano dots, etc.) may be formed on the first substrate and transferred to the second substrate. Another embodiment of the present invention uses the pattern formed on the first substrate to provide another mold and to transfer it to the second substrate.
In one embodiment of the present invention, the second substrate is a flexible, non-flat substrate or a polymer substrate, whereby the substrate, the pattern, nanostructures or molds are manufactured, the substrate is not limited in shape and type.
The present invention, in order to solve the above-described problems of the prior art, by using a two-dimensional transfer layer, to produce a nanopattern. To this end, the present invention manufactures a nano-pattern by laminating a two-dimensional transfer layer on a substrate, a desired film on the stacked two-dimensional transfer layer, and then patterning it. Patterning of the film can be carried out in a self-assembled manner, such as block copolymers, DNA and protein nanostructures. However, the film on the transfer layer may be patterned by semiconductor lithography processes such as e-beam lithography, scanning probe nanolithography, and the like. In particular, in one embodiment of the present invention, the transfer layer and the upper nanopattern film preferably have a good chemical affinity. For example, when manufacturing a nanostructure (pattern) based on the self-assembly of the block copolymer, in order to overcome the limitations of the substrate, an embodiment of the present invention is a two-dimensional sheet ( Film) into the transfer layer, overcoming the limitations of the substrate.
In one embodiment of the present invention, the two-dimensional film may be a carbon substrate sheet, such as graphene, but shows an excellent chemical affinity with the block copolymer using a pattern layer, and at the same time through a process such as reduction Any two-dimensional sheet whose surface energy is adjustable can be used as the transfer layer. In the following example, a graphene sheet, in particular, a reduced graphene oxide film is used as the transfer layer, but the scope of the present invention is not limited thereto.
In general, graphene is known as a material in which a single layer of carbon atoms forms a honeycomb form. After unexpected separation from natural graphite, the specific properties of graphene have been studied academically. Typical features of graphene include quantum hole effects at room temperature, bipolar electric field effects, controllable band gaps, and high elasticity. Because of these properties, graphene is being studied as a new nanoelectronic device, sensor, composite and energy conversion / storage material.
In particular, the present invention utilizes mechanically stable but elastic graphene, particularly chemically modified graphene (CMG) films, as a transfer layer, to produce non-flat, flexible self-assembled nanopatterning assemblies. That is, the present invention proceeds to self-assembled block copolymer patterning using the reduced graphene oxide film, to prepare a transfer substrate mold of the desired form. Furthermore, a multi-layered alignment structure can also be produced through the mold substrate according to the present invention. That is, the present invention uses a robust mechanical substrate structure having high chemical, thermal stability, atomic size planar body and elasticity, and thus, the graphene substrate according to the present invention can be effectively used in nanopatterning.
Since pure graphene has a low wettability, the present invention uses chemically modified graphene prepared through graphene oxide, which improves the wettability of the block copolymer thin film and any substrate. In addition, chemically modified graphene can be obtained from pure graphene in a cost effective manner. We have fabricated a wrinkle-free, nanosize thick chemically modified graphene thin film directly from spin casting of a graphene oxide dispersion solution. Herein, spin-casting means a method of applying a solution while rotating at a predetermined speed of the substrate. After the spin-casting, the applied graphene oxide film is reduced, in which the reduction was chemical reduction based on heat treatment or chemical reduction using chemicals. The substrate surface is then modified by the reduced graphene film, in particular each polymer block region of the block copolymer subsequently laminated by the surface energy properties of the modified substrate has a morphology oriented on the surface.
In other words, the chemical modification of the graphene film according to the present invention proceeds chemically and thermally, and as a result, the morphology of the block copolymer self-assembled nano template, and the surface energy to induce excellent adhesion, the graphene It formed in the film, and converted.
Thus, the block copolymer template formed on the chemically modified graphene film and the chemically modified graphene film combined with the nanostructures transferred from the template can be easily transferred to a three-dimensional or flexible substrate that maintains a macroscopically dense pattern. Can be. Furthermore, the good wettability of the chemically modified graphene film according to the present invention promotes strong bonding of the block copolymer nanotemplate to the target substrate, which is a very important factor in the pattern transfer which must maintain minimal morphological deformation. do.
1B is a schematic diagram illustrating a self-assembled nanopatterning process.
Referring to FIG. 1B, a chemically modified graphene film is laminated on a flat, hard surface, wherein the chemically modified graphene film is laminated by spin-casting a graphene film solution on a substrate and then reducing it. . A block copolymer (BCP) nano template is then formed on the laminated chemically modified graphene film, and the patterned block copolymer (BCP) nano template is transferred to the desired three-dimensional substrate.
The suitable thickness of the chemically modified graphene film laminated on the flat silicon substrate is 5-10 nm (15-30 graphene layer), thereby ensuring the robustness of the film and maintaining a constant angle during substrate transfer. Mechanical flexibility can be at the same time.
In one embodiment of the present invention, the block copolymer was polystyrene-block-poly (methyl methacrylate) (PS- b- PMMA), and the thickness thereof was 80 nm. In one embodiment of the present invention, the block copolymer film is spincast on the laminated chemically modified graphene film, and then self-assembled into a lamellar or cylinder morphology by thermal annealing.
The inventors have discovered that by controlling the thermal energy of the chemically modified graphene film through chemical and thermal reduction methods, a layered or cylinder morphology of PS- b- PMMA film can be formed. In other words, the PMMA polymer in the block copolymer can be selectively removed by a chemical etching process, so that the remaining PS structure functions as a template (which is supported by a chemically modified graphene film), to a desired non-flat substrate. Can be transferred.
In one embodiment of the present invention, the thermally assembled PS- b- PMMA nano template was actively utilized, but the scope of the present invention is not limited thereto. That is, the chemically modified graphene film is very stable with respect to organic solvent annealing and therefore can be used for any other block copolymer. For example, polystyrene-block-poly (ethylene oxide), polystyrene-block-poly (vinyl pyridine), polystyrene-block-poly (dimethylsiloxane), and the like can be deposited on chemically modified graphene films. Therefore, the present invention can be applied to various block copolymers, which is mechanically robust, and can be effectively applied to substrates of various morphologies.
FIG. 1C shows a layered block copolymer nano template uniformly coated on a silicon substrate with a cross section cut at the right angle, and FIG. 1D shows a nano template on a micro-sized ZnO heelcock array prepared by imprint.
Following support by the chemically modified graphene film, discontinuous PS plate-shaped nanoregions remain after PMMA etching, which can be transferred to a desired substrate in a form that maintains an integrated pattern.
In addition, the thin nano template (typically less than 80 nm) stacked on the chemically modified graphene film is strongly bonded to the below non-planar substrate, which has the advantage that the deformation and bending of the morphology itself do not occur. The morphology of the copolymer nano template can be transferred according to the prior art in the form of the underlying non-flat substrate.
Furthermore, wet etching or electro- / non-electroplating methods can be utilized directly in the non-flat geometry film according to the present invention. In addition, vacuum deposition or reactive ion etching may also be utilized for flat geometry prior to transfer. Furthermore, after the pattern transfer, the chemically modified graphene composed of organic elements (C, H, O, N) can be effectively removed by a conventional method without contamination of the pattern, thereby enabling substrate recycling.
1E and 1F show block copolymer nano templates uniformly coated on a syringe needle. The minimum radius of surface curvature for uniform coating on multilayer chemically modified graphene was also determined based on the bending stiffness (see FIG. 1G).
In general, monolayer chemically modified graphene has 2-3 times stronger rigidity than pure graphene, and N-multilayered graphene has N times stronger rigidity than single layer chemically modified graphene film.
Under sufficient interfacial adhesion conditions to the bottom surface, it was found that even 20 layers of chemically modified graphene films can uniformly coat the syringe film (greater than 5 mm in radius). According to the present invention, any curved structure, high transfer properties for three-dimensional substrates, is very effective in the manufacture of various novel structures, and can be used, for example, in cylinder pattern masters for roll imprints.
Yet another embodiment of the present invention provides a method of manufacturing a nanostructure by forming a nanostructure on a first substrate using a pattern layer and transferring the same to a second substrate.
FIG. 2 shows an array of metal nanowires and nanodots transferred onto a transparent flexible substrate, wherein FIGS. 2A-2C show poly (ethylene terephthalate) (PET) substrates after Pt nanowire arrays in any orientation have been made from a layered template. It shows what was transferred to. Plastic substrates are to be interpreted herein to include any and all substrates having flexibility, ie, flexible properties, and more specifically to flexible polymer substrates.
In general, PET substrates exhibit significant rough surface properties, which is one of the poor properties for ultra-thin nanoscale patterning. Furthermore, thermoplastic polymers have poor thermal / chemical stability, which makes it difficult to maintain structural stability during the thermal / solvent annealing required for block copolymer self-assembly. However, the self-assembled nanopattern supported by the chemically modified graphene film stably forms the desired metal nanostructure on the PET surface. In the same way, chemically modified glassene film-block copolymer templates according to the invention have been successfully applied to flexible substrates such as polyimide or polycarbonate.
In addition, another substrate material that is considered a challenge for self-assembled nanopattern applications is poly (dimethylsiloxane) (PMMS). It is an inorganic elastomer, and has high tensile properties, mechanical solubility, and optical transparency, and thus is widely used in electronic devices having soft lithography processes and tensile properties. However, this shows a weak chemical / thermal stability and results in structural instability resulting from solvent swelling even with simple spin-casting of block copolymer (BCP) films.
As shown in FIGS. 2D and 2, gold nanodots formed on chemically modified graphene from vertical cylinder nano templates are easily transferred to PDMS substrates with simple mechanical contact. The inventors noted that such ultrathin and discontinuous nanostructures are hardly transferable to PDMS substrates without chemically modified graphene films. In addition, PDMS is often used as a pattern master in soft lithography processes, so good transfer properties for PDMS can provide a route for subsequent nanopatterning of various substrates with any chemistry and structure.
The prepared metal nanoparticle arrays have a uniform size and spatial distribution and typically exhibit locally distributed surface plasmon resonance (LSPF), which is shown in FIG. 2F. The resonance peak at 536 nm was maintained even at high tensile state (20%). This non-variability of the resonant peak position produces a significant beneficial effect on the stable operation of the flexible and tensile optical elements.
Chemically modified graphene films enable the repeated application of nanopatterning at the same location, thereby making composite nanostructures.
3 shows randomly arranged gold nanowires prepared by two repeated self-assembled nanopatterns. In a first step, gold nanowires were formed on a glass substrate that mimicked the layered morphology (see FIG. 3A). The structure produced in FIG. 3A is optically transparent (> 80%) due to incomplete surface application and thin thickness (10 nm) of metal nanowires. However, the stacked gold nanowires by cutting the nanowire fragments are electrically insulated from a macroscopic point of view. This electrical insulation is maintained when self-assembled metal patterning is repeated without chemically modified graphene.
When the same block copolymer film is self-assembled on the nanopatterned metal surface, the resulting self-assembled nanoregions are epitaxially replicated by the nanowire morphology below. Thus, subsequent pattern transfer does not guarantee electrical connection of the nanowires. This nanosized epitaxy effect can be avoided by the chemically modified graphene film according to the present invention, since the chemically modified graphene film according to the present invention can screen the surface energy modulation and change of the nanowire morphology below. to be. The resulting second self-assembled nanopatterning step produces a layered morphology whose nanoarea recording and orientation is completely decoupled, i.e., independent of the nanowire morphology below. FIG. 3B is a SEM image showing the nanoscale morphology of the bottom metal nanowire and the block copolymer film co-laminated on top. 3C shows the patterned morphology of metal nanowires interconnected in any form. The metal nanowires covered on top slightly reduced optical transparency (FIG. 3D), but the electrical conductivity at the same thickness increased rapidly to the level of 56 Ω / □, which is close to the conductivity of continuous films of the same thickness (48 Ω). / □) (see FIG. 3E). Because of the mechanical flexibility of the nanoscale structure, the electrically conductive, optically transparent metal network according to the present invention can be utilized in components such as electrodes of electronic devices and electrodes of electrode flexible / tensile properties.
The multiple repeatability of self-assembled nanopatterning, in combination with other conventional photolithography processes, allows for the fabrication of nanostructures that are well aligned and oriented according to device properties. 4A to 4C show cross-shaped metal nanowires produced by two repeated self-assembly. The photoresist film is patterned by conventional photolithography.
Following the self-assembled oriented BCP film in the photolithography trench and the subsequent pattern transfer, a very highly aligned metal nanowire array is produced (see FIG. 4B). After the first orientation self-assembly step, the chemically modified graphene film is laminated into the intermediate layer to prevent surface energy changes. The second photoresist patterning is performed on a chemically modified graphene film, with an orientation perpendicular to the underlying layer. Subsequent self-assembly and pattern transfer produce cross-shaped nanowires. Such a cross-shaped array is a very important device structure for a memory device. Similar multistage processes can be used in conjunction with the etching process instead of the lamination process, thereby producing nanoscale rectangular arrays. Rectangular arrays are also nanostructures that require significant levels of device structure. However, BCP self-assembly essentially prefers hexagonal patterning of cylinders or spheres in thin films, and the formation of such nanoscale square arrays is an important challenge for self-assembled nanopatterning.
4D and 4E are square array planes and cross-sectional views of silica nanoposts formed by a dual vertical etch process.
The surface roughness induced by the first etch is reduced by the chemically modified graphene film, and the second etch successfully forms orthogonal nano trenches, producing a rectangular array.
Electronic and optoelectronic devices with mechanical flexibility and tensile properties, and complex three-dimensional integrated structures, require patterning techniques that can be applied to flexible, non-flat composite structures. The present invention provides a chemically modified graphene film as described above as an excellent transfer substrate and recyclable substrate for self-assembled nanopatterning of flexible and three-dimensional structural substrates. Transferable chemically modified graphene films can be used in conjunction with other self-assembly systems, such as DNA and protein nanostructures, and in combination with other nanopatterning methods, such as e-beam lithography and scanning probe nanolithography, It can be applied to more compact and structured structures of any shape. Furthermore, the electrical conductivity and surface functionality of chemically modified graphenes provide a good opportunity for surface energy regulation and electrochemical pattern transfer.
Although the present invention has been described with reference to the limited embodiments, various embodiments are possible within the scope of the present invention. It will also be understood that, although not described, equivalent means are also incorporated into the present invention. Therefore, the true scope of protection of the present invention should be defined by the following claims.
Claims (19)
Forming a transfer layer on the first substrate; And
Pattern forming method comprising the step of forming a pattern layer on the formed transfer layer.
The transfer layer is a pattern manufacturing method characterized in that it has a flexible two-dimensional structure.
The transfer layer is a pattern manufacturing method comprising a graphene film, an organic-inorganic clay structure film, CN nanosheets and MOS2 nanosheets.
The pattern layer is a pattern manufacturing method, characterized in that the nanopattern patterned by self-assembly or lithography.
Separating the transfer layer from the first substrate; And
And transferring the separated transfer layer to a second substrate.
The second substrate is a pattern manufacturing method comprising any one of a flexible, non-flat substrate and a polymer substrate.
Stacking a block copolymer on the transfer layer;
Self-assembling the laminated block copolymer; And
Patterning by etching the self-assembled block copolymer patterning method.
Stacking the transfer layer on the first substrate, and adjusting a surface energy of the transfer layer.
Oxygen functional group is coupled to the surface of the transfer layer, and controlling the surface energy of the transfer layer is a pattern manufacturing method, characterized in that to proceed in a manner to reduce the oxygen functional group.
Separating the transfer layer from the first substrate; And
And transferring the separated transfer layer to a second substrate.
The substrate is a nanostructure manufacturing method comprising any one of a flexible, non-flat substrate and a polymer substrate.
Depositing a chemically modified graphene layer on the first substrate;
Stacking a block copolymer on the chemically modified graphene layer;
Self-assembling the laminated block copolymer;
Patterning the self-assembled block copolymer; And
Separating the graphene layer from the first substrate; And
The nano-pattern manufacturing method comprising the step of transferring the separated graphene layer to another second substrate.
Self-assembling the block copolymer is a nanopattern manufacturing method, characterized in that the thermal or solvent annealing process.
Method of producing a nanopattern, characterized in that to proceed in a manner to selectively remove some of the polymer of the self-assembled block copolymer.
And spin-casting the graphene oxide onto a substrate, thereby reducing the graphene oxide, thereby controlling the surface energy of the chemically modified graphene layer.
Depositing a chemically modified graphene layer on the first substrate;
Stacking a block copolymer on the chemically modified graphene layer;
Self-assembling the laminated block copolymer;
Selectively etching and patterning the self-assembled block copolymer to partially expose the chemically modified graphene layer;
Stacking a mold material on the patterned block copolymer;
Removing the patterned block copolymer; And
Separating the graphene layer from the first substrate, transferring it to another second substrate, and manufacturing a mold stacked on the second substrate.
The template material is a nano-mould manufacturing method characterized in that bonded to the chemically modified graphene layer in the form of a cylinder or line
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| KR20150075685A (en) * | 2013-12-26 | 2015-07-06 | 한국과학기술원 | Formation method of nano scale patterning and intergrated device for electronic apparatus manufacturing thereof |
| KR101579869B1 (en) * | 2014-11-27 | 2016-01-04 | 한국기계연구원 | manufacturing method of heating glass using transparent electrode |
| US9893313B2 (en) | 2015-06-19 | 2018-02-13 | Samsung Display Co., Ltd. | Organic luminescence display device and method of manufacturing the same |
| CN107867679A (en) * | 2016-09-27 | 2018-04-03 | 中国科学院物理研究所 | A kind of preparation and transfer method without the single-orientated carbon nano-tube film of support |
| KR20200140599A (en) | 2019-06-07 | 2020-12-16 | 연세대학교 산학협력단 | Apparatus and Method for Fabricating Pattern using Region Limitation of Electrochemical Substance Reaction |
| CN113104809A (en) * | 2021-04-08 | 2021-07-13 | 德州学院 | Method for preparing graphene nano-net by utilizing patterned substrate for imprinting |
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2012
- 2012-06-11 KR KR1020120061922A patent/KR20130138877A/en not_active Application Discontinuation
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20150075685A (en) * | 2013-12-26 | 2015-07-06 | 한국과학기술원 | Formation method of nano scale patterning and intergrated device for electronic apparatus manufacturing thereof |
| KR101579869B1 (en) * | 2014-11-27 | 2016-01-04 | 한국기계연구원 | manufacturing method of heating glass using transparent electrode |
| US9893313B2 (en) | 2015-06-19 | 2018-02-13 | Samsung Display Co., Ltd. | Organic luminescence display device and method of manufacturing the same |
| US10673015B2 (en) | 2015-06-19 | 2020-06-02 | Samsung Display Co., Ltd. | Organic luminescence display device and method of manufacturing the same |
| CN107867679A (en) * | 2016-09-27 | 2018-04-03 | 中国科学院物理研究所 | A kind of preparation and transfer method without the single-orientated carbon nano-tube film of support |
| KR20200140599A (en) | 2019-06-07 | 2020-12-16 | 연세대학교 산학협력단 | Apparatus and Method for Fabricating Pattern using Region Limitation of Electrochemical Substance Reaction |
| CN113104809A (en) * | 2021-04-08 | 2021-07-13 | 德州学院 | Method for preparing graphene nano-net by utilizing patterned substrate for imprinting |
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