CN101772831B - Dicing/die bonding tape and method for manufacturing semiconductor chip - Google Patents

Dicing/die bonding tape and method for manufacturing semiconductor chip Download PDF

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Publication number
CN101772831B
CN101772831B CN2008800246358A CN200880024635A CN101772831B CN 101772831 B CN101772831 B CN 101772831B CN 2008800246358 A CN2008800246358 A CN 2008800246358A CN 200880024635 A CN200880024635 A CN 200880024635A CN 101772831 B CN101772831 B CN 101772831B
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China
Prior art keywords
cutting
adhesive layer
adhesive phase
chip
semiconductor chip
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CN101772831A (en
Inventor
松田匠太
渡部功治
林聪史
福冈正辉
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/006—Presence of (meth)acrylic polymer in the substrate
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)

Abstract

Provided is a dicing/die bonding tape for easily and surely picking up a semiconductor chip, in the case of dicing a semiconductor wafer and picking up the semiconductor chip together with a die bonding film. The dicing/die bonding tape is provided with a cohesive/adhesive layer, and a non-cohesive layer laminated on the cohesive/adhesive layer. The non-cohesive layer is formed of a composition containing acrylic ester polymer as a main component, and the non-cohesive layer has a storage elastic modulus of 1-400MPa and a fracture elongation of 5-100% at a temperature when the semiconductor chip is picked up.

Description

Cutting and the chip join manufacture method of band and semiconductor chip
Technical field
The present invention relates to be used to make the cutting and the chip join band of semiconductor chip, particularly, cutting that the present invention relates to be fitted on the semiconductor wafer and use when cutting and during chip join and chip join are with band and use this cutting and manufacturing method for semiconductor chips that chip join usefulness is with.
Background technology
Traditionally, on semiconductor chip is downcut and be installed in substrate etc. from semiconductor wafer, use cutting and chip join with being with.For cutting and chip join band, be fitted with semiconductor wafer on the one side of chip join film, be fitted with the cutting film on the another side of chip join film.When cutting, semiconductor wafer is cut together with the chip join film.After cutting, the chip join film that is fitted with semiconductor chip is peeled off from the cutting film, and semiconductor chip is taken out together with the chip join film.Like this, semiconductor chip is installed on the substrate from chip join film side.
When cutting, in order stably to cut, semiconductor wafer must be fitted on the cutting film securely.In addition, when after cutting semiconductor chip being picked up, the chip join film that is fitted with semiconductor chip must unhinderedly be peeled off from the cutting film.Therefore, the known use possesses basis material and is layered in the surface of this basis material and the cutting film of the adhesive phase that is made of the adhesive that solidifies because of the irradiation of ultra violet radiation line etc.Use this cutting film, the irradiation by ultraviolet ray, radioactive ray or light etc. after cutting is solidified adhesive phase, reduces the bonding force of adhesive phase like this.The bonding force of adhesive phase reduces, and then can easily will peel off from the cutting film with the chip join film that semiconductor chip is fitted.
For example, in following patent document 1, disclose on the one side of membranaceous cement layer stacked cutting with radiation-curing type adhesive phase with the cutting of band and chip join with band.The film adhesive layer is formed by film adhesive, and described film adhesive comprises thermoplastic resin and epoxy resin.Here, used epoxy resin and the liquid-state epoxy resin more than 3 functional groups as above-mentioned epoxy resin.Above-mentioned film adhesive layer is equivalent to be fitted in the chip join film of the one side of semiconductor chip.
Patent documentation 1: the spy opens the 2004-292821 communique
Summary of the invention
When as patent documentation 1, using cutting, must reduce the bonding force of adhesive to adhesive irradiation ultraviolet radiation or radioactive ray with band with the adhesive phase that solidifies by radioactive ray or ultraviolet irradiation.Therefore, must implement the operation of irradiation ultraviolet radiation or radioactive ray.In addition, the equipment that is used for irradiation ultraviolet radiation or radioactive ray also is essential.And ultraviolet curing resin or radiation-curing type resin are the comparison costlinesses.
In addition, use such as patent documentation 1 described radiation-curing type adhesive phase, also uncured when cutting, thereby soft.Therefore, insufficient in the machinability in when cutting, after cutting, be easy to generate the cutting swarf of beard shape during picking up semiconductor chip.Therefore, can not pick up semiconductor chip effectively in some cases.In addition, if the cutting swarf of beard shape is attached to chip join film or semiconductor chip, then in some cases can not be and the semiconductor chip pick up is installed accurately towards correct direction.
And semiconductor wafer attenuation is gradually in recent years accompanied therewith, adopts the cutting of laser to be able to extensive use.When adopting laser radiation to cut, the adhesive that solidifies by the irradiation two of ultraviolet ray, radioactive ray is sometimes because of laser radiation reacts, molten being bonded on the chip join film.In this case, might cut the semiconductor chip that obtains can not pick up fully.
In addition, even shine radioactive ray, can not fully reduce the bonding force of radiation-curing type adhesive in some cases.When the radiation-curing type adhesive phase that fully reduces from bonding force at the chip join film that will be fitted with semiconductor chip is not peeled off, can apply unnecessary power to semiconductor chip.Therefore, the hidden danger that exists semiconductor chip to damage.
The object of the present invention is to provide a kind of cutting and chip join with being with and using this cutting and chip join to make the semiconductor chip method with band, semiconductor wafer is being cut, and during together with chip join film picking up semiconductor chip, can easily and effectively pick up semiconductor chip with band by described cutting and chip join together with the chip join film, and do not need irradiation ultraviolet radiation, so numerous and diverse operation such as light.
The present invention relates to possess adhesive phase and cutting that is layered in the non-adhesive layer on this adhesive phase and chip join band, wherein, described non-adhesive layer forms by containing the composition of acrylic polymer as principal component, under the temperature when picking up semiconductor chip, the storage modulus of described non-adhesive layer is 1～400MPa, and elongation at break is 5～100%.Adhesive phase is the part of using as the chip join film.That is, adhesive phase is with the picked part of semiconductor chip when picking up semiconductor chip.
Above-mentioned non-adhesive layer preferably by make contain acrylic polymer as the composition of principal component take place crosslinked and crosslinked body form.
Cutting of the present invention and chip join are with in the band, and the peeling force between preferred described non-adhesive layer and the described adhesive phase is 1～15N/m.If peeling force is in this scope,, easily and conscientiously semiconductor chip is picked up together with adhesive phase even irradiation ultraviolet radiation etc. not then also can be peeled off the adhesive phase that is fitted with semiconductor chip from non-adhesive layer without barrier.
Among the present invention, preferred described composition also contains: having can (ア Network リ Le base, acryl) Fan Ying two keys and weight average molecular weight be at the oligomer of 100～50000 scope with acryloyl group.This oligomer has flexibility at normal temperatures.Therefore, by using above-mentioned oligomer, can easily storage modulus and elongation at break be set in the above-mentioned specific scope.Above-mentioned oligomer preferably has at least a kind of skeleton that is selected from polyether skeleton, polyester backbone, butadiene skeleton, polyurethane skeleton, silicate skeleton, isoprene skeleton, poly-alkyl skeleton, polyacrylonitrile skeleton, Merlon skeleton and the dicyclopentadiene skeleton.Oligomer with these skeletons is soft, thereby, can more easily the storage modulus and the elongation at break of non-adhesive layer be adjusted in the above-mentioned particular range.
Above-mentioned non-adhesive layer preferably comprises the filler powder of average grain diameter 0.1～10 μ m.In this case, the machinability in the time of can improving cutting.Therefore, can suppress cutting swarf attached on the semiconductor chip or on the adhesive phase that semiconductor chip is cut.
Cutting of the present invention and chip join are used for band: the process of picking up the semiconductor chip of cutting-out when semiconductor wafer is cut into semiconductor chip and with the adhesive phase that downcuts.
Cutting of the present invention and chip join be with in the band, the cutting film when above-mentioned non-adhesive layer can the double as cutting.In this case, semiconductor wafer can be attached to cutting of the present invention and chip join with on being with, and cut.
In addition, cutting of the present invention and chip join can also possess the cutting film with band, and this cutting film-stack is on the opposite face of the face with being laminated with described adhesive phase of described non-adhesive layer.In this case, by cutting film, the expansion in can cutting effectively (expand, エ Network ス パ Application De) etc.Therefore, do not require that non-adhesive layer has the function as the cutting film, so, can and form and freely design non-adhesive layer by various materials.
The manufacture method of semiconductor chip of the present invention possesses following step: prepare cutting of the present invention and the chip join step with band and semiconductor wafer; Cutting and chip join with the opposite face of the face with being laminated with described non-adhesive layer of the described adhesive phase of being with on, the step of the described semiconductor wafer of fitting; Be fitted with cutting and chip join is cut together with described adhesive phase with the semiconductor wafer of being with described, be divided into the step of semiconductor chip one by one; And, after the cutting, the described described adhesive phase that is fitted with semiconductor chip is peeled off the step that semiconductor chip is taken out together with described adhesive phase from described non-adhesive layer.
In the manufacture method of the semiconductor chip that has an adhesive phase of the present invention, preferably after cutting, carry out the taking-up of semiconductor chip, and do not change the peeling force between described adhesive phase and the described non-adhesive layer.Among the present invention, can after cutting, taking-up efficiently have the semiconductor chip of adhesive phase, and not change peeling force.
(effect of invention)
Cutting of the present invention and chip join possess adhesive phase and non-adhesive layer with band, thereby, by laminated semiconductor wafer on the opposite face of the side with being laminated with non-adhesive layer of this adhesive phase, carry out cutting step according to manufacturing method for semiconductor chips of the present invention, the adhesive phase that will be fitted with semiconductor chip after cutting is peeled off from non-adhesive layer, and semiconductor chip taken out together with adhesive phase, can make the semiconductor chip of band adhesive phase.
And, above-mentioned non-adhesive layer forms by containing the composition of acrylic polymer as principal component, and under the temperature when picking up semiconductor chip, the storage modulus of non-adhesive layer at 1～400MPa, elongation at break in 5～100% scope, thereby after the cutting, can without barrier the adhesive phase that is fitted with semiconductor chip easily be peeled off from non-adhesive layer, and not change the peeling force of non-adhesive layer.And, during cutting, can cut above-mentioned adhesive phase without barrier with semiconductor wafer.Therefore, when cutting, be not easy to produce cutting swarf, be not easy to pick up bad because of this cutting swarf.
In addition, have in the prior art of cutting with band of radiation-curing type adhesive phase,, the bonding force of cutting film is fully reduced even shine radioactive ray sometimes in use.Therefore, when peeling off the chip join film that is fitted with semiconductor chip, can apply unnecessary power to semiconductor chip, crackle appears in chip easily.Relative therewith, use cutting of the present invention and chip join with band, then can implement to reduce the processing of bonding force, and pick up the semiconductor chip that is fitted on the adhesive phase without barrier.Therefore, be difficult for semiconductor chip is applied unnecessary power, semiconductor chip is cracky not.Therefore, to add man-hour be particularly advantageous being used for thin semiconductor chip with band for cutting of the present invention and chip join.
When the formation of above-mentioned non-adhesive layer does not satisfy when making that bonding force reduces because of illumination, the quality of non-adhesive layer can not change because of laser radiation.Therefore, in this case, cutting and chip join are used with being with in the cutting be adapted at adopting laser radiation.
Description of drawings
Fig. 1 (a) and (b) be to show that cutting of an embodiment of the invention and chip join cut off front cross-sectional view and part secant plane figure with the part of band.
Fig. 2 shows the cutting of other execution mode of the present invention and the part cut-out front cross-sectional view that chip join is used band.
Fig. 3 is the plane graph that shows the semiconductor wafer of the manufacturing that is used for semiconductor chip.
Fig. 4 shows that semiconductor wafer is placed on the front cross-sectional view of the state on the estrade, and this figure is used to illustrate cutting and the chip join method of making semiconductor chip of bringing of using an embodiment of the invention.
Fig. 5 is the front cross-sectional view that shows the state when being fitted in semiconductor wafer on the adhesive phase, and this figure is used to illustrate cutting and the chip join method of making semiconductor chip of bringing of using an embodiment of the invention.
Fig. 6 is the front cross-sectional view that shows the state after being fitted in semiconductor wafer on the adhesive phase, and this figure is used to illustrate cutting and the chip join method of making semiconductor chip of bringing of using an embodiment of the invention.
Fig. 7 shows that the semiconductor wafer that has adhesive phase is turned over, and is placed on the front cross-sectional view of the state on other estrade, and this figure is used to illustrate cutting and the chip join method of making semiconductor chip of bringing of using an embodiment of the invention.
Fig. 8 (a)～(d) is that the substep demonstration is cut the semiconductor wafer that is fitted with adhesive phase, be divided into the part intercepting front cross-sectional view of the step of semiconductor chip one by one, this figure is used to illustrate cutting and the chip join method of making semiconductor device of bringing of using an embodiment of the invention.
Fig. 9 is a front cross-sectional view, has shown the cutting and the chip join semiconductor chip of being with manufacturing that use an embodiment of the invention.
Symbol description
1... cutting and chip join are with being with
2... mold release film
2a... upper surface
3... adhesive phase
3a... surface
4... non-adhesive layer
4a... face
4b... another face
5... cutting film
5a... basis material
5b... adhesive phase
5c... extension
6, the 7... screening glass
11... cutting and chip join are with being with
15... cutting and chip join are with being with
16... cutting film
21... semiconductor wafer
21a... surface
21b... the back side
21c... circumferential lateral surface
22... estrade
23... cutting wheel (ダ イ シ Application グ リ Application グ)
24... estrade
31... semiconductor chip
41... the 1st cutter
42... the 1st cutting part
43... the 2nd cutter
44... the 2nd cutting part
The embodiment of invention
Below, the present invention is specifically described.
Fig. 1 (a) and (b) are with partly intercepting cutting and the chip join band that front cross-sectional view and part plane taken figure have shown an embodiment of the invention.
Shown in Fig. 1 (a) and (b), cutting and chip join are with having the mold release film 2 of strip with 1.On the upper surface 2a of mold release film 2, be laminated with adhesive phase 3, non-adhesive film 4 and cutting film 5 in order as the chip join film.Be pasted with adhesive phase 3 on the face 4a of non-adhesive layer 4.On another face 4b opposite, be pasted with cutting film 5 with a face of non-adhesive layer 4.
The flat shape of adhesive phase 3, non-adhesive layer 4 and cutting film 5 is circular.
The diameter of adhesive phase 3 can be different with the diameter of non-adhesive layer 4.The diameter of above-mentioned non-adhesive layer 4 is preferably greater than the diameter of adhesive phase 3.The circumferential lateral surface of non-adhesive layer 4 preferably extends to the more lateral of the circumferential lateral surface of adhesive phase 3.Under these situations, when semiconductor wafer being fitted on the adhesive phase 3, semiconductor wafer is positioned at and the corresponding part in position that is provided with non-adhesive layer 4 exactly.In addition, can effectively semiconductor wafer be fitted on the adhesive phase 3.
The diameter specific viscosity mixture layer 3 of above-mentioned cutting film 5 and the diameter of non-adhesive layer 4 are bigger.Like this, the diameter of the preferred specific viscosity mixture of the diameter layer 3 of cutting film 5 and non-adhesive layer 4 is bigger.The circumferential lateral surface of cutting film 5 preferably extends to the more lateral of the circumferential lateral surface of adhesive phase 3 and non-adhesive layer 4.Under these situations, can on cutting film 5, attach cutting wheel.In addition, can on adhesive phase 3, attach semiconductor wafer exactly in the position.In addition, because cutting wheel and semiconductor wafer can be attached to different layers, therefore, can form adhesive phase 3 and cutting film by optimal material respectively.Therefore, the applying reliability after machinability, picking up property and the chip join improves.
In addition, the circumferential lateral surface of preferred non-adhesive layer 4 is not covered by adhesive layer 3.
The surperficial 3a that is pasted with mold release film 2 of adhesive phase 3 is the faces that attach semiconductor wafer.
Cutting film 5 has basis material 5a and is layered in adhesive phase 5b on the one side of basis material 5a.Cutting film 5 is attached on another face 4b of non-adhesive layer 4 from adhesive phase 5b side.Cutting film 5 is attached on the adhesive phase 3 indirectly by non-adhesive layer 4.
The one side of the extension 5c of cutting film 5 is attached on the upper surface 2a of mold release film by adhesive phase 5b.That is, the zone in the circumferential lateral surface more lateral of specific viscosity mixture layer 3 and non-adhesive layer 4, cutting film 5 is attached on the upper surface 2a of mold release film 2.
Cutting film 5 has above-mentioned extension 5c, and this is on the surperficial 3a that semiconductor wafer is fitted in adhesive phase 3 time, cutting wheel is attached to be positioned on the adhesive phase 5b of extension 5c of circumferential lateral surface more lateral of specific viscosity mixture layer 3.
Shown in Fig. 1 (b), on the upper surface 2a of strip mold release film 2, equally spaced dispose a plurality of duplexers that constitute by adhesive phase 3, non-adhesive layer 4 and cutting film 5.In addition, the upper surface 2a of mold release film 2 is provided with screening glass 6,7.When being provided with screening glass 6,7, screening glass 6,7 can alleviate because of cutting and chip join when being with 1 for example to be curled into the roller shape to cutting film 5 applied pressures.Certainly, also screening glass 6,7 can be set.
Thickness, shape for mold release film do not have particular restriction.For example, can use foursquare mold release film.Can only dispose a duplexer that constitutes by adhesive phase, non-adhesive layer and cutting film above the mold release film.In addition, above-mentioned duplexer and mold release film also can not be curled into the roller shape.In addition, thickness, the shape for adhesive phase, non-adhesive layer and cutting film do not have particular restriction yet.
The cutting of present embodiment and chip join with the feature with 1 are: non-adhesive layer 4 forms by containing the composition of acrylic polymer as principal component, and under the temperature when picking up semiconductor chip, the storage modulus of non-adhesive layer 4 is 1～400MPa, and elongation at break is 5～100%.
If above-mentioned storage modulus is less than 1MPa, then non-adhesive layer 4 became soft, and non-adhesive layer 4 operability own reduce.If above-mentioned storage modulus surpasses 400MPa, then be difficult to form and peel off starting point, picking up semiconductor chip well.When above-mentioned elongation at break less than 5% the time, in some cases, the operability of non-adhesive layer 4 reduces.If above-mentioned elongation at break surpasses 100%, then in some cases, be easy to generate cutting swarf during cutting.
Above-mentioned storage modulus is preferably in the scope of 1～150MPa.Under the temperature when picking up semiconductor chip, above-mentioned elongation at break is preferably in 10～50% scope.
In this specification, " storage modulus " is meant: the non-adhesive layer 4 of thickness 0.5mm, width 5mm is cut into the width of 3cm, the value of the storage modulus the when DVA-200 that uses IT instrumentation company to make measures under the condition of 10Hz and deformation 0.1%.
In this specification, " temperature when picking up " is meant: with the value of thermocouple measurement, this value is in the step of picking up semiconductor chip, the temperature value of the semiconductor chip when using the semiconductor chip after thimble jack-up is cut.Temperature when picking up is preferably in 20～25 ℃ scope.
In this manual, " elongation at break " is meant: according to JIS K7127 standard, the RTC-1310A that uses Orientec company to make is under draw speed 300mm/ minute condition, non-adhesive layer 4 monomers are stretched the value of being measured at the percentage elongation of breakaway poing.
Cutting and chip join are with being with in 1, and the peeling force between adhesive phase 3 and the non-adhesive layer 4 is preferably in the scope of 1～15N/m, more preferably in the scope of 1～8N/m.If the peeling force between adhesive phase 3 and the non-adhesive layer 4 in this preferable range, even then do not reduce peeling force, also can easily be peeled off adhesive phase 3 from non-adhesive layer 4.And, when semiconductor wafer is cut or when taking out semiconductor chip, can prevent the breakage of semiconductor chip.
If the peeling force between adhesive phase 3 and the non-adhesive layer 4 is less than 1N/m, chip flies up easily during cutting.If above-mentioned peeling force surpasses 15N/m, the adhesive phase 3 that then is difficult to be fitted with semiconductor chip strips down from non-adhesive layer 4.
Above-mentioned peeling force adopts following method to obtain.At first, on cutting and chip join usefulness face, attach corrosion resistant plate with the opposition side of the face of the non-adhesiveness layer 4 of attaching of 1 adhesive phase 3.Then, fully pressing adhesive phase 3 and corrosion resistant plate obtain test body.Then, this test body is fixed, adhesive phase 3 down, non-adhesive layer 4 up.Under this state, and adhesive phase 3 and non-adhesive layer 4 between the interface be 180 the degree angles direction on non-adhesive layer 4 is applied power, peel off non-adhesive phase 4 from adhesive phase 3.The power that mensuration such as the manufacturing AGS-100D of use Shimadzu Seisakusho Ltd. apply in order to peel off at this moment is as peeling force.
Cutting and chip join in order to make peeling force in above-mentioned particular range, can be used above-mentioned non-adhesive layer 4 with being with in 1.That is, non-adhesive layer 4 can be adjusted film as the peeling force of adjusting peeling force uses.
And, can make above-mentioned storage modulus, elongation at break and the peeling force concrete material of the non-adhesive layer in above-mentioned particular range 4 respectively, will describe in detail in the back.
And cutting of the present invention and chip join can be omitted cutting film 5 with in the band, and by above-mentioned non-adhesive layer 4 double as cutting film.
But, because when cutting, can more effectively prevent flying up of semiconductor chip etc., so the preferred cutting film 5 that on the opposite face of the face with being pasted with adhesive phase 3 of non-adhesive layer 4, attaches.In this case, for non-adhesive layer 4, the autgmentability when not requiring cutting etc., the material and the composition that therefore constitute non-adhesive layer 4 can be selected in wideer scope.
(constituting the details of the material of non-adhesive layer 4)
For above-mentioned non-adhesive layer 4, do not have particular restriction, if its by contain that the composition of acrylic polymer as principal component forms and temperature when the picking up semiconductor chip under storage modulus at above-mentioned particular range, elongation at break also at above-mentioned particular range.As non-adhesive layer 4, can use various crylic acid resin films.
And in this manual, non-adhesive layer has the character of " non-bonding "." non-bonding " refers to that not only the surface does not have fusible situation, also comprise have can adhesion with when contact finger little fusible situation.
Above-mentioned containing in the composition of acrylic polymer as principal component,, comprise the above acrylic polymer of 50 weight % as resinous principle.By the crylic acid resin film that such composition forms, compare with TPO film etc., more soft.By using the above-mentioned composition that contains acrylic polymer as principal component, can make storage modulus lower, for example making storage modulus is about 400MPa.Therefore, the machinability in the time of can improving cutting.In addition, by the acrylic polymer of selecting to use as principal component, can reduce non-adhesive layer 4 polarity, reduce storage modulus, easily elongation at break be set in above-mentioned particular range.
There is not particular restriction for aforesaid propylene acids polymer.Aforesaid propylene acids polymer is preferably (methyl) acrylic acid alkyl ester polymer.As (methyl) acrylic acid alkyl ester polymer, preferred (methyl) acrylic acid alkyl ester polymer that uses alkyl with carbon number 1～18.When use has (methyl) acrylic acid alkyl ester polymer of alkyl of carbon number 1～18, can reduce the polarity of non-adhesive layer 4 fully, reduce the surface energy of non-adhesive layer 4, and improve the fissility that adhesive phase 3 is peeled off from non-adhesive layer 4.If the carbon number of abovementioned alkyl surpasses 18, then the manufacturing of non-adhesive layer sometimes becomes difficult.The carbon number of abovementioned alkyl is preferably more than 6.In this case, can further reduce the polarity of non-adhesive layer 4.
Need to prove that in this manual, " (methyl) acrylic acid " is meant " methacrylic acid or acrylic acid ".
Aforesaid propylene acids polymer is preferably the polymer that (methyl) alkyl acrylate monomer of using the alkyl with carbon number 1～18 obtains as main monomer.Aforesaid propylene acids polymer more preferably makes above-mentioned main monomer, contain the monomer of functional group and depend on the needs can carry out (methyl) acrylic acid alkyl ester polymer that copolymerization obtains with monomer by conventional method with other modification of their copolymerization.The carbon number of the alkyl of (methyl) acrylic acid alkyl ester polymer is preferably more than 2, is preferably more than 6 especially.The weight average molecular weight of aforesaid propylene acids polymer is about 200,000～2,000,000.
Other modification monomer for above-mentioned does not have particular restriction.Above-mentioned other modification preferably is not the monomer that contains carboxyl with monomer.When use contained the monomer of carboxyl, the polarity of non-adhesive layer 4 increased, and consequently, sometimes picking up property was caused harmful effect.
There is not particular restriction for above-mentioned (methyl) alkyl acrylate monomer.Above-mentioned (methyl) alkyl acrylate monomer is (methyl) alkyl acrylate monomer of obtaining of the uncle of the alkyl by having carbon number 1～18 or secondary alkanol and (methyl) acrylic acid esterification preferably.
As above-mentioned (methyl) alkyl acrylate monomer, specifically can list: (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) isopropyl acrylate, (methyl) n-butyl acrylate, (methyl) tert-butyl acrylate, (methyl) 2-EHA, (methyl) 2-ethyl hexyl acrylate, (methyl) lauryl acrylate etc.
And above-mentioned (methyl) alkyl acrylate monomer can use separately, also can be used in combination.
As the above-mentioned monomer that contains functional group, can list: the monomer of hydroxyls such as (methyl) acrylic acid 2-hydroxy methacrylate, (methyl) acrylic acid 2-hydroxy propyl ester, (methyl) acrylic acid 4-hydroxyl butyl ester, the own ester of (methyl) acrylic acid 6-hydroxyl, (methyl) acrylic acid 8-hydroxyl monooctyl ester, (methyl) acrylic acid 10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid 12-hydroxyl lauryl or (4-hydroxymethyl cyclohexyl) methyl (methyl) acrylate.
In addition, aforesaid propylene acids polymer is preferably the curing type acrylic polymer with reactive double bond.In this case, can improve make this contain the curing type acrylic polymer as the composition of principal component crosslinked and the crosslink density of crosslinked body.As above-mentioned curing type acrylic polymer, can list in side chain or the main chain or the main chain end has curing type acrylic polymer of reactive double bond etc.Method for import reactive double bond in acrylic polymer does not have particular restriction.Because MOLECULE DESIGN is easy, so preferably above-mentioned reactive double bond is imported side chain.For example, can list following method: after being ready to make the acrylic polymer that contains functional group that acrylic polymer obtains with containing the monomer copolymerization of functional group, to have can with this functional group (below, also claim functional group A) reaction functional group (below, also claim the B of functional group) and the two compound (below, also claim Compound C) of reactive double bond, to keep the mode of reactive double bond, by condensation reaction or addition reaction, import the above-mentioned functional group's acrylic polymer that contains.
Example as the combination of above-mentioned functional group A and the B of functional group can list: the combination of carboxyl and epoxy radicals, carboxyl and azacyclo-propyl group or hydroxyl and NCO etc.In the combination of these functional groups, because can easily control reaction, so the combination of preferred hydroxyl and NCO.In addition, in the combination of these functional groups, the above-mentioned acrylic polymer that contains functional group contain which functional group all can, which functional group above-claimed cpd C contains all can.The acrylic polymer that contains functional group and combination that preferably have hydroxyl with above-claimed cpd of NCO.As isocyanate compound with NCO and reactive double bond; for example can list: methacryl based isocyanate, 2-methacryloxyethyl isocyanates, 1; two (acryloyl-oxy ylmethyl) ethyl isocyanates of 1-or m-isopropenyl-α, α-Er Jiajibianji isocyanates etc.In addition, the above-mentioned acrylic polymer that contains functional group with hydroxyl preferably make the monomer of acrylic polymer and above-mentioned hydroxyl or hydroxyl the ether compound copolymerization and acrylic polymer.As the ether compound of above-mentioned hydroxyl, for example can list: 2-hydroxyethyl vinyl ethers, 4-hydroxybutyl vinyl ethers or diethylene glycol mono vinyl ether etc.
Above-mentioned non-adhesive layer preferably by contain acrylic polymer as the composition of principal component crosslinked and crosslinked body form.In this case, the machinability in when cutting can be improved, the fissility of adhesive phase when non-adhesive layer is peeled off after cutting can also be improved.
As the method for making above-mentioned non-adhesive layer, at first, will comprise aforesaid propylene acids polymer, photoreaction initiator and/or thermal response initator and other compound compositions that optionally cooperates is coated on the mold release film, form composition layer.Then, carry out illumination and add at least a processing of pining for.So, by photocuring or hot curing or photocuring and hot curing, composition layer solidifies (crosslinked), has obtained the non-adhesive layer that is made of the composition layer that solidifies (crosslinked).This wherein especially preferably uses photocuring.
When making non-adhesive layer by hot curing, the temperature during owing to curing is layered in the mold release film generation thermal contraction on the composition layer.If the mold release film thermal contraction, then the thickness and precision of gained non-adhesive layer reduces sometimes.If the thickness and precision of non-adhesive layer reduces, then the adaptation between non-adhesive layer and the adhesive phase reduces sometimes.In addition, low and adhesive phase and non-adhesive layer not fully under the situation of driving fit at the thickness and precision of non-adhesive layer, the concavo-convex increase on the surface of adhesive phase sometimes.If the surface of adhesive phase is concavo-convex big, then the adaptation between adhesive phase and the semiconductor wafer reduces sometimes.In this case, chip taking place easily during cutting flies up.
There is not particular restriction for above-mentioned photoreaction initiator.As above-mentioned photoreaction initiator, can use for example optical free radical propellant, light cation propellant etc.In addition, there is not particular restriction for above-mentioned thermal response initator.As above-mentioned thermal response initator, can list hot radical propellant etc.
There is not particular restriction for above-mentioned optical free radical propellant.Commercially available product as above-mentioned optical free radical propellant, for example can list: Irgacure 184, Irgacure 2959, Irgacure 907, Irgacure819, Irgacure 651, Irgacure 369 and Irgacure 379 (more than be Ciba SpecialtyChemicals company make), benzoin methylether, benzoin ethyl ether, benzoin iso-propylether and LucirinTPO (manufacturing of BASF Japan company) etc.
As above-mentioned smooth cation propellant, can use salt or metal-organic complex class.As described salt, can list aromatic series diazol, aromatic series halogen, aromatic series sulfonium salt etc.As described metal-organic complex class, can enumerate and tap a blast furnace-allene complex compound, two luxuriant titanium complexs, aryl-silane alcohol-aluminium complex etc.
As above-mentioned hot radical propellant, can list organic peroxide or azo-compound etc.As above-mentioned organic peroxide, can list: cumene hydroperoxide, cumyl peroxide, di-t-butyl peroxide, peroxidating lauryl, benzoyl peroxide, tert-butyl hydroperoxide isopropyl carbonic ester, tert-butyl hydroperoxide-2 ethyl hexanoic acid ester, t-amyl peroxy-2 ethyl hexanoic acid ester etc.As above-mentioned azo-compound, can list: 2,2 '-azo two (isobutyronitrile), 1,1 '-azo two (cyclohexanenitrile), 2,2 '-azo two (2, the 4-methyl pentane nitrile) or dimethyl 2,2 '-azo two (2 Methylpropionic acid ester) etc.
In the above-mentioned composition, except containing above-mentioned acrylic polymer, preferably contain also that to have can be 500～50000 oligomer with two keys of acryloyl group reaction and weight average molecular weight as principal component.By containing such oligomer, can be easily the above-mentioned storage modulus of non-adhesive phase be controlled at 1～400Mpa, described non-adhesive phase is that the crosslinked crosslinked body that gets of composition of principal component forms with the acrylic polymer by making above-mentioned.In addition, can be easily the above-mentioned elongation at break of non-adhesive layer be controlled at 5～100%, described non-adhesive layer is formed by the crosslinked crosslinked body that gets of the composition that with the acrylic polymer is principal component.If the weight average molecular weight of above-mentioned oligomer less than 500, then can't fully obtain to cooperate the effect of oligomer sometimes.If the weight average molecular weight of above-mentioned oligomer surpasses 50000, then the picking up property reduction of semiconductor chip sometimes.
There is not particular restriction for above-mentioned oligomer.Above-mentioned oligomer preferably has the skeleton of flexibility.As the skeleton of above-mentioned flexibility, for example can list: polyether skeleton, polyester backbone, butadiene skeleton, polyurethane skeleton, silicate skeleton or dicyclopentadiene skeleton etc.
Above-mentioned oligomer more preferably has the acrylic compounds oligomer of polyether skeleton or polyester backbone.The skeleton of flexibility is meant: make that the Tg of above-mentioned oligomer is the skeleton below 25 ℃.Flexibility height with acrylic compounds oligomer of polyether skeleton or polyester backbone.As above-mentioned acrylic compounds oligomer, can list PPOX diacrylate or polyethers urethane acrylates quasi-oligomer etc. with polyether skeleton or polyester backbone.As their commercially available product, can list M-225 (manufacturing of East Asia Synesis Company) and UN-7600 (industrial group makes on the root) etc.
For can with two keys of acryloyl group reaction, do not have particular restriction.As the group that contains this pair key, can list (methyl) acryloyl group, vinyl or pi-allyl etc.This wherein, preferred acryloyl group.In this case, easily above-mentioned storage modulus and elongation at break are controlled at above-mentioned particular range.
Preferably in the above-mentioned oligomer of 1 molecule, contain more than 2 above-mentioned can with two keys of acryloyl group reaction.
Above-mentioned have can with the oligomer of two keys of acryloyl group reaction, because of heating or illumination crosslinked with above-mentioned acrylic polymer.Crosslinked by this, imported the skeleton that above-mentioned oligomer is originated in the crosslinked body.Therefore, storage modulus, elongation at break can be controlled at the scope of hope.
In addition, above-mentioned can with two keys of acryloyl group reaction, can also may reside in the strand 2 of two terminal existence of molecule.Wherein preferably terminal there are 2 acryloyl groups in this at two of molecule, perhaps, has acryloyl group in two terminal and strands of molecule.
As above-mentioned polyether skeleton, can list for example PPOX skeleton or polyethylene glycol oxide skeleton etc.
As the above-mentioned acrylic compounds oligomer that has polyether skeleton and only have acryloyl group, can list PPOX diacrylate or polyesters urethane acrylates quasi-oligomer etc. at two ends of molecule.As their commodity, can list UA340P, UA4200 (manufacturing of Xin Zhong village chemical industrial company) and ARONIX M-1600 and ARONIX M-220 (manufacturing of East Asia Synesis Company) etc.
As aforesaid propylene acids oligomer, the preferred urethane acrylates quasi-oligomer that uses with 3～10 functional groups.If less than the urethane acrylates quasi-oligomer of 3 functional groups, then the flexibility of non-adhesive layer becomes too high, occurs cutting swarf during cutting easily.If surpass the urethane acrylates quasi-oligomer of 10 functional groups, then non-adhesive layer becomes fragile, and pollutes easily during cutting.
As the urethane acrylates quasi-oligomer of 3～10 functional groups, can list the urethane acrylates quasi-oligomer of PPOX main chain etc. with polyether skeleton and polyurethane skeleton.As their commercially available product, can list: U-2PPA, U-4HA, U-6HA, U-15HA, UA-32P, U-324A, U-108A, U-200AX, UA-4400, UA-2235PE, UA-160TM and UA-6100 (manufacturing of Xin Zhong village chemical industrial company) and UN-7600, UN-7700, UN-333, UN-1255 (industrial group makes on the root) etc.
Use level for above-mentioned oligomer does not have particular restriction.Preferably, cooperate above-mentioned oligomer with the ratio more than 1 weight portion with respect to above-mentioned (methyl) acrylate polymer 100 weight portions.If the amount of above-mentioned oligomer less than 1 weight portion, then can't fully obtain to cooperate the effect of above-mentioned oligomer sometimes.Preferably, cooperate above-mentioned oligomer with the ratio below 100 weight portions with respect to aforesaid propylene acids polymer 100 weight portions.If the amount of above-mentioned oligomer is too much, then oligomer does not dissolve sometimes, and the manufacturing of viscous layer encounters difficulties.
When using two ends to have the oligomer of acryloyl group, with respect to aforesaid propylene acids polymer 100 weight portions, preferably the ratio with 1～100 weight portion cooperates oligomer, and more preferably the ratio with 1～50 weight portion cooperates.
In addition, when using multi-functional urethane acrylates quasi-oligomer, with respect to above-mentioned (methyl) acrylate polymer 100 weight portions, preferably the ratio with 1～50 weight portion cooperates oligomer, and more preferably the ratio with 1～30 weight portion cooperates.
Above-mentioned non-adhesive layer 4 preferably comprises filler grain.By comprising filler grain, can improve machinability.Therefore, can suppress cutting swarf attached on sticking following layer 3 or the semiconductor chip.
The average grain diameter of described particle filled composite is preferably 0.1～10 μ m, more preferably 0.1～5 μ m.Above-mentioned average grain diameter is excessive, then thickness distribution inequality in the face of non-adhesive layer 4 sometimes; Above-mentioned average grain diameter is too small, the machinability in the time of then can not improving cutting sometimes fully.
And in this manual, " average grain diameter " is meant: adopt the volume mean diameter with the dynamic laser scattering method.
There is not particular restriction for above-mentioned filler grain.As above-mentioned filler grain, can use silicon dioxide or aluminium oxide etc.
As the commodity of above-mentioned filler, for example can list: SC1050MJD, SC2050MB, SC4050MNA, SC4050MNB and SC4050SEJ (more than be Adomertech company make) etc.
Material with respect to the formation non-adhesive layer 4 except that filler grain amounts to 100 weight portions, and above-mentioned filler preferably cooperates with the ratio of 0.1～150 weight portion.The amount of above-mentioned filler grain is too much, and then non-adhesive layer 4 ruptures when expansion sometimes.The amount of above-mentioned filler grain is very few, and then machinability can't fully improve sometimes.
Above-mentioned non-adhesive layer 4 can also contain ultra-violet absorber.
Thickness for above-mentioned non-adhesive layer 4 does not have particular restriction.The thickness of above-mentioned non-adhesive layer 4 is preferably in the scope of 30～100 μ m.If thickness is less than 30 μ m, then autgmentability is not enough sometimes.If thickness surpasses 100 μ m, uneven thickness sometimes then.If uneven thickness then can't suitably cut sometimes.
(mold release film 2)
Above-mentioned mold release film 2 is used to protect the face 3a that is pasted with semiconductor wafer of adhesive phase 3.But mold release film is not to be to use.
As above-mentioned mold release film 2, can list polyesters films such as PETG film, TPO films such as poly tetrafluoroethylene, polyethylene film, polypropylene screen, polymethylpentene film, polyvinyl acetate film, plastic films such as polychloroethylene film, polyimide film etc.On the one side of these films, can implement the demoulding with polyorganosiloxane release agent or the release agent etc. with chain alkyl etc. and handle.Mold release film 2 is preferably synthetic resin films such as polyethylene glycol phthalate film.The flatness of synthetic resin film and thickness and precision etc. are good.
Described mold release film can be a monofilm, also can be the stacked film that above-mentioned film is laminated more than 2 layers.When mold release film is stacked film, can form by described film-stack different more than 2 kinds.
(adhesive phase 3)
Above-mentioned adhesive phase 3 is used for semiconductor chip is fitted in substrate or other semiconductor chip etc.In when cutting, above-mentioned adhesive phase 3 is cut off with semiconductor wafer.
Above-mentioned adhesive phase 3 is for example formed by the hardening resin composition that comprises suitable curable resin, thermoplastic resin etc.Described hardening resin composition before solidifying is very soft, thereby is out of shape because of external force easily.In addition, after obtaining semiconductor chip, make it to solidify, can semiconductor chip be fitted in substrate etc. securely by on the adhesion by adhesive phase 3 by adhesive phase 3 being applied heat energy or luminous energy.
There is not particular restriction for above-mentioned curable resin.As above-mentioned curable resin, can list heat-curing resin or light-cured resin etc.
There is not particular restriction for above-mentioned thermoplastic resin.As above-mentioned thermoplastic resin, can list for example poly-(methyl) acrylate, mylar, polyvinyl alcohol resin or vinylite etc.These thermoplastic resins may be used alone, two or more kinds can also be used in combination.
For above-mentioned heat-curing resin, there is not particular restriction.As above-mentioned heat-curing resin, for example can list: epoxy resin or polyurethane resin etc.These heat-curing resins may be used alone, two or more kinds can also be used in combination.
For above-mentioned light-cured resin, there is not particular restriction.As above-mentioned light-cured resin, for example can list: the epoxy resin by light cationic catalyst polymerizations such as light sensitivity salt or have acrylic resin of light sensitivity vinyl etc.These light-cured resins may be used alone, two or more kinds can also be used in combination.
As described curable resin, especially preferably use epoxy resin, mylar, glue the type resin with methyl methacrylate or hot melt.As the sticking type resin of described hot melt, can list with butyl acrylate etc. be the principal monomer unit gather (methyl) acrylate etc.
Adhesive phase 3 preferably comprises epoxy resin, has the solid polymer and the curing agent of the functional group of reacting with epoxy resin.In this case, between semiconductor chip that fits together by adhesive phase 3 and the substrate or the applying reliability between a plurality of semiconductor chip increase.
There is not particular restriction for above-mentioned epoxy resin.The epoxy resin that has the polycyclic hydrocarbon skeleton on the preferred main chain of described epoxy resin.If have the epoxy resin of polycyclic hydrocarbon skeleton on the use main chain, the good rigidly of solidfied material then, molecular motion is hindered.Therefore, the mechanical strength of solidfied material, thermal endurance, moisture-proof are improved.
Epoxy resin for having the polycyclic hydrocarbon skeleton on the above-mentioned main chain does not have particular restriction.As the epoxy resin that has the polycyclic hydrocarbon skeleton on the above-mentioned main chain, for example can list: dicyclopentadiene dioxide, dicyclopentadiene type epoxy resin, naphthalene type epoxy resin, tetrahydroxy phenyl ethane type epoxy resin, four (glycidoxypropyl phenyl) ethane or 3,4-epoxy radicals-6-methyl cyclohexane ylmethyl-3,4-epoxy radicals-6-methylcyclohexanecarboxylic acid ester etc.This wherein is fit to use dicyclopentadiene type epoxy resin or naphthalene type epoxy resin.
As the object lesson of above-mentioned dicyclopentadiene type epoxy resin, can list: have the phenolic resin varnish of dicyclopentadiene skeleton etc.Object lesson as above-mentioned naphthalene type epoxy resin, can list: 1-glycidyl naphthalene, 2-glycidyl naphthalene, 1,2-diglycidyl naphthalene, 1,5-diglycidyl naphthalene, 1,6-diglycidyl naphthalene, 1,7-diglycidyl naphthalene, 2,7-diglycidyl naphthalene, triglycidyl group naphthalene or 1,2,5,6-four glycidyl group naphthalene etc.
The epoxy resin that has the polycyclic hydrocarbon skeleton on these main chains can use separately, also can be used in combination.In addition, above-mentioned dicyclopentadiene type epoxy resin and naphthalene type epoxy resin can be distinguished separately and use, and also can both be used in combination.
The preferred lower limit of weight average molecular weight that has the epoxy resin of polycyclic hydrocarbon skeleton on the above-mentioned main chain is 500, and preferred upper limit is 1000.If above-mentioned weight average molecular weight is less than 500, then the mechanical strength of solidfied material, thermal endurance and moisture-proof etc. all can't fully improve sometimes.If above-mentioned weight average molecular weight surpasses 1000, then solidfied material becomes crisp too firmly sometimes.
For the above-mentioned high molecular polymer that has with the functional group of epoxy reaction, there is not particular restriction.As this high molecular polymer, for example can list: polymer with amino, carbamate groups, imide, hydroxyl, carboxyl or epoxy radicals etc.This wherein preferably has the high molecular polymer of epoxy radicals.If use high molecular polymer, the then flexible raising of solidfied material with epoxy radicals.
In addition, if have the epoxy resin of polycyclic hydrocarbon skeleton and high molecular polymer on the use main chain with epoxy radicals, then not only can improve mechanical strength, thermal endurance and the moisture-proof of solidfied material by the epoxy resin that has the polycyclic hydrocarbon skeleton on the above-mentioned main chain, but also can improve the flexible of solidfied material by above-mentioned high molecular polymer with epoxy radicals.
Above-mentioned high molecular polymer with epoxy radicals preferably endways and/or side chain (side position) have epoxy radicals.
As above-mentioned high molecular polymer, for example can list with epoxy radicals: contain the acrylic rubber of epoxy radicals, the butadiene rubber that contains epoxy radicals, bisphenol type high molecular expoxy resin, contain epoxy radicals phenoxy resin, contain epoxy radicals acrylic resin, contain the carbamate resins of epoxy radicals or contain mylar of epoxy radicals etc.This wherein because can improve mechanical strength, the thermal endurance of solidfied material, so be fit to use the acrylic resin that contains epoxy radicals.These high molecular polymers with epoxy radicals can use separately, also can be used in combination.
For above-mentioned curing agent, there is not particular restriction.As above-mentioned curing agent, for example can list: heat-curing type acid anhydride type curing agents such as trialkyl tetrabydrophthalic anhydride, phenols curing agent, amine curing agent, potentiality curing agent such as dicyandiamide or cationic catalyst type curing agent etc.These curing agent can use separately, also can be used in combination.
, for example can list: acid anhydride type curing agents such as methyl tetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyl carbic anhydride or trialkyl tetrabydrophthalic anhydride down for the object lesson of liquid heat-curing type curing agent as above-mentioned normal temperature.This wherein from the angle of hydrophobization, preferably uses methyl carbic anhydride or trialkyl tetrabydrophthalic anhydride.These acid anhydride type curing agents may be used alone, two or more kinds can also be used in combination.
For rerum natura of adjusting curing rate, solidfied material etc., can use curing accelerator with above-mentioned curing agent.
For above-mentioned curing accelerator, there is not particular restriction.As above-mentioned curing accelerator, for example can list: imidazoles curing accelerator, tertiary amines curing accelerator etc.This wherein preferably uses the imidazoles curing accelerator, because when using the imidazoles curing accelerator, can easily adjust the rerum natura of curing rate or solidfied material etc.These curing accelerators may be used alone, two or more kinds can also be used in combination.
There is not particular restriction for described imidazoles curing accelerator.As above-mentioned imidazoles curing accelerator; for example can list:, perhaps alkalescence is protected and the product of the commodity that obtain " 2MAOK-PW " by name (four countries change into industrial group and make) etc. with isocyanuric acid with 1 1-cyanoethyl-2-phenylimidazole that protects and obtain of cyanoethyl with imidazoles.These imidazoles curing accelerators may be used alone, two or more kinds can also be used in combination.
When being used in combination curing accelerator such as acid anhydride type curing agent and for example imidazoles curing accelerator, with respect to epoxy radicals, the addition of acid anhydride type curing agent is preferably below the theoretical necessary equivalent.If the addition of acid anhydride type curing agent is excessive, then have following hidden danger: chloride ion becomes easily because of existence stripping from solidfied material of moisture.For example, when with hot water from solidfied material during extracting stripping composition, the pH of extracting water is low to moderate about 4～5 in some cases, the chloride ion of extracting out from epoxy resin stripping in large quantities.
In addition, when being used in combination curing accelerator such as amine curing agent and for example imidazoles curing accelerator, for epoxy radicals, below the preferred necessary equivalent in theory of the addition of amine curing agent.If then there is following hidden danger in the addition surplus of amine curing agent: chloride ion becomes easily because of moisture stripping from the solidfied material of hardening resin composition.For example, when with hot water from solidfied material during extracting stripping composition, the pH height of extracting water is to be alkalescence, the chloride ion of extracting out stripping in large quantities from epoxy resin in some cases.
(cutting film 5)
As above-mentioned, above-mentioned cutting film 5 has basis material 5a and is layered in adhesive phase 5b on the one side of basis material 5a.Adhesive phase 5b is the cutting wheel attaching adhesive phase that cutting wheel attaches.
For above-mentioned basis material 5a, there is not particular restriction.Object lesson as above-mentioned basis material 5a, can list: polyesters films such as PETG film, TPO films such as poly tetrafluoroethylene, polyethylene film, polypropylene screen, polymethylpentene film, polyvinyl acetate film, plastic films such as polychloroethylene film, polyimide film etc.This is wherein good because of autgmentability, carrying capacity of environment is little, so be fit to use the TPO film.
There is not particular restriction for above-mentioned adhesive phase 5b, as long as its formation satisfies non-adhesive layer 4 and cuts peeling force between the film greater than the peeling force between adhesive phase 3 and the non-adhesive layer 4.Object lesson as the adhesive that constitutes adhesive phase 5b can list: acrylic adhesives, special synthetic rubber class adhesive, synthetic resin quasi-adhesive or rubber adhesive etc.This wherein, the acrylic adhesives of preferred pressure sensitive.When using the acrylic adhesives of pressure sensitive, can more easily cutting wheel be peeled off from adhesive phase 5b.And, can reduce the cost of adhesive phase 5b.
Show the cutting and the chip join band of other execution mode of the present invention among Fig. 2 with the form that partly intercepts front cross-sectional view.
Cutting shown in Figure 2 and chip join are with being stacked in order mold release film 2, adhesive phase 3, non-adhesive layer 4 and cutting film 16 and the duplexer that obtains with 15.That is, cutting and chip join are with to be to cut film with 1 formation different different with cutting and chip join usefulness with 15.The cutting and chip join with being with in 15, used and above-mentioned cutting film 5 cutting films 16 different, that adhesive phase is not set.
The cutting film can not have adhesive phase.When the cutting film did not have adhesive phase, the cutting film was made by the material that for example has bonding force.
Below, use Fig. 3～Fig. 9, describe with the manufacture method of 1 o'clock semiconductor chip using above-mentioned cutting and chip join usefulness.
At first, prepare above-mentioned cutting and chip join with being with 1 and semiconductor wafer 21.
As shown in Figure 3, the flat shape of semiconductor wafer 21 is circular.On the surperficial 21a of semiconductor wafer 21, in be divided into each rectangular zone by raceway groove, be formed with the circuit that is used to constitute each semiconductor chip, but not shown come out.In semiconductor wafer 21, back side 21b is through grinding, and it has the thickness of regulation.
The thickness of semiconductor wafer 21 is preferably more than the 30 μ m.If the thickness of semiconductor wafer 21 is thinner than 30 μ m, then in some cases, semiconductor chip is grinding when cutting or can crack during operation and damaged.
And when cutting described later, semiconductor wafer 21 is cut apart together with being divided into each rectangular zone.
As shown in Figure 4, the positive and negative of ready semiconductor wafer 21 is put upside down, the semiconductor wafer 21 after positive and negative is put upside down is loaded on the estrade 22.That is, semiconductor wafer 21 is loaded on the estrade 22, and makes the surperficial 21a side of semiconductor wafer 21 contact with estrade 22.On estrade 22, separate on the position of certain intervals with the circumferential lateral surface 21c of semiconductor wafer 21 circular cutting wheel 23 is set.The height of cutting wheel 23 is equal to or slightly lower than the thickness sum of semiconductor wafer 21, adhesive phase 3 and non-adhesive layer 4.
Then, cutting and chip join usefulness with the surperficial 3a of 1 adhesive phase 3 on laminated semiconductor wafer 21.The front cross-sectional view of the state when on adhesive phase 3 laminated semiconductor wafer 21 has been shown among Fig. 5.
Cutting film 5 has the extension 5c of the more lateral of the circumferential lateral surface that extends to adhesive phase 3 and non-adhesive layer 4.As shown in Figure 5, peel off cutting and chip join with 1 mold release film 2, surperficial 3a that makes adhesive phase 3 and the adhesive 5b of the extension 5c that cuts film 5 expose.
When peeling off mold release film 2 back or peeling off mold release film 2, the adhesive phase 5b of the extension 5c of the cutting film 5 that will expose is attached on the cutting wheel 23.And the adhesive phase 3 that will expose fits in the back side 21b of semiconductor wafer 21.
Fig. 6 is the front cross-sectional view that shows the state after being fitted in semiconductor wafer 21 on the adhesive phase 3.
On the 21b of the back side of whole semiconductor wafer 21, be fitted with adhesive phase 3.Support to cut the extension 5c of film 5 by cutting wheel 23, make semiconductor wafer 21 not to be applied unnecessary power.
Then, shown in the front cross-sectional view of Fig. 7, the semiconductor wafer 21 that is fitted with adhesive phase 3 is taken out from estrade 22, with its positive and negative upset.At this moment, the state that is attached on the cutting film 5 with cutting wheel 23 is removed.Be loaded on other estrade 24 after the semiconductor wafer 21 positive and negatives upset that will take out, and to make surperficial 21a be the top.
Then, the semiconductor wafer 21 that is fitted with adhesive phase 3 is cut, be divided into semiconductor chip one by one.
Use Fig. 8 (a)～(d) that the step of the semiconductor wafer 21 that is fitted with adhesive phase 3 being cut, being divided into semiconductor chip 31 one by one is described.
Fig. 8 (a)～(d) is the part intercepting front cross-sectional view that substep shows the step that is divided into semiconductor chip 31 one by one.
Shown in Fig. 8 (a)～(d), damaged in order to prevent semiconductor wafer 21 because of cutting, divide two stages (substep is sheared) to cut.Fig. 8 (a) and (b) have shown the 1st stage of cutting, and Fig. 8 (c), (d) have shown the 2nd stage of cutting.And if semiconductor wafer 21 breakages can prevent to cut the time, cutting also can be carried out with a stage.
Shown in Fig. 8 (a), at first, the 1st cutter 41 of cutter sweep are for example begun to insert the position of the back side 21b of no show semiconductor wafer 21 still from the surperficial 21a of semiconductor wafer 21.And then extract the 1st cutter 41, so just the formation shown in Fig. 9 (b) the 1st cutting part 42.
Then, shown in Fig. 8 (c), will insert than the central authorities of thin the 2nd cutter 43 of the 1st cutter 41 of cutter sweep from the 1st cutting part 42.The 2nd cutter 43 are inserted into the position darker than the 1st cutting part 42.As long as the insertion depth of the 2nd cutter 43 has no particular limits through-bonding agent layer 3, and the 2nd cutter 43 preferably are inserted into the position of also non-through non-adhesiveness layer 4, for example is inserted into half the position of thickness that is less than or equal to non-adhesiveness layer 4.
Extract the 2nd cutter 43, shown in Fig. 8 (d), forming than the 1st cutting part 42 darker positions like this than the 2nd narrower cutting part 44 of the 1st cutting part 42 cutting widths.
Cutting method for semiconductor wafer does not have particular restriction.As cutting method, for example can list: a step cutting of cutting with 1 cutter, the substep cutting that above-mentioned 2 cuttves of usefulness cut and use inclined-plane cutting that 2 cuttves cut etc.In the inclined-plane cutting,, use the cutter of cross section as the V font for the surface of cutting semiconductor chip.In the top method, preferably carry out substep cutting, because be difficult for causing the breakage of semiconductor wafer during cutting.
And, as the cutting method of semiconductor wafer, can adopt the method for irradiating laser.When semiconductor wafer being cut off together with adhesive phase 3, make laser radiation arrive non-adhesiveness layer 4 by irradiating laser.When the tradition cutting film that uses ultraviolet hardening or radiation-curing type etc., have following problems: when cutting by laser radiation, the cutting film reacts because of the energy of laser, on the molten layer that is bonded at other.In this case, can not be from picking up semiconductor chip on the cutting film.
Relative therewith, in the present embodiment, non-adhesiveness layer 4 is difficult for because of laser radiation reacts, and non-adhesiveness layer 4 is not meltable to stick on the adhesive phase 3.Therefore, even when using laser to cut, also can carry out picking up of semiconductor chip without barrier.
After semiconductor wafer cut, is divided into one by one semiconductor chip, elongate the cutting film and enlarge interval between the semiconductor chip one by one that cutting obtains.Then, the adhesive phase 3 that is fitted with semiconductor chip is peeled off from non-adhesiveness layer 4, taken out semiconductor chip 31 shown in Figure 9.
In addition, the method of peeling off from non-adhesiveness layer 4 as the adhesive phase 3 that will be fitted with semiconductor chip, can list following method: from the rear side of semiconductor wafer with the method for many pin jack-up or with the method for multistage pin jack-up, carry out the method for vacuum stripping from the face side of semiconductor wafer, perhaps utilize the method for ultrasonic vibration, or the like.
(embodiment 1～11 and comparative example 1～5)
For making non-adhesive layer, used in the acrylic polymer 1～5 shown in the following table 1 any one.Formed non-adhesive layer by any one the composition that comprises in the acrylic polymer 1～5 as principal component.
At first, synthesize following acrylic polymer.
(acrylic polymer 1)
95 parts by weight of acrylic acid 2-Octyl Nitrites, 5 parts by weight of acrylic acid 2-hydroxy methacrylates, 0.2 weight portion are dissolved in the ethyl acetate as the Irgacure 651 (manufacturing of Ciba-Geigy company, 50% ethyl acetate solution) and the 0.01 weight portion lauryl mercaptan of optical free radical propellant, have obtained solution.This solution irradiation ultraviolet radiation is carried out polymerization, obtained the ethyl acetate solution of polymer.And, with respect to solid constituent 100 weight portions of this solution, make 2-methacryloxyethyl isocyanates (clear and electrician company makes, the Karenz MOI) reaction with it of 3.5 weight portions, obtained acrylic copolymer (acrylic polymer 1).The weight average molecular weight of gained acrylic polymer 1 is 700,000, and acid number is 0.86 (mgKOH/g).
(acrylic polymer 2)
94 parts by weight of acrylic acid 2-Octyl Nitrites, 5 parts by weight of acrylic acid 2-hydroxy methacrylates, 1 parts by weight of acrylic acid, 0.2 weight portion are dissolved in the ethyl acetate as the Irgacure 651 (manufacturing of Ciba-Geigy company, 50% ethyl acetate solution) and the 0.01 weight portion lauryl mercaptan of optical free radical propellant, have obtained solution.This solution irradiation ultraviolet radiation is carried out polymerization, obtained the ethyl acetate solution of polymer.And, with respect to solid constituent 100 weight portions of this solution, make 2-methacryloxyethyl isocyanates (clear and electrician company makes, the Karenz MOI) reaction with it of 3.5 weight portions, obtained acrylic copolymer (acrylic polymer 2).The weight average molecular weight of gained acrylic polymer 2 is 760,000, and acid number is 6.73 (mgKOH/g).
(acrylic polymer 3)
97 parts by weight of acrylic acid 2-Octyl Nitrites, 3 parts by weight of acrylic acid 2-hydroxy methacrylates, 0.2 weight portion are dissolved in the ethyl acetate as the Irgacure 651 (manufacturing of Ciba-Geigy company, 50% ethyl acetate solution) and the 0.01 weight portion lauryl mercaptan of optical free radical propellant, have obtained solution.This solution irradiation ultraviolet radiation is carried out polymerization, obtained the ethyl acetate solution of polymer.And, solid constituent 100 weight portions with respect to this solution, make 2-methacryloxyethyl isocyanates (clear and electrician company makes, the Karenz MOI) reaction with it of 1.8 weight portions, obtained as acrylic copolymer (acrylic polymer 3).The weight average molecular weight of gained acrylic polymer 3 is 890,000, and acid number is 0.58 (mgKOH/g).
(acrylic polymer 4)
99 parts by weight of acrylic acid 2-Octyl Nitrites, 1 parts by weight of acrylic acid 2-hydroxy methacrylate, 0.2 weight portion are dissolved in ethyl acetate as the Irgacure 651 (manufacturing of Ciba-Geigy company, 50% ethyl acetate solution) and the 0.01 weight portion lauryl mercaptan of optical free radical propellant, have obtained solution.This solution irradiation ultraviolet radiation is carried out polymerization, obtained the ethyl acetate solution of polymer.And, with respect to solid constituent 100 weight portions of this solution, make 2-methacryloxyethyl isocyanates (clear and electrician company makes, the Karenz MOI) reaction with it of 0.9 weight portion, obtained acrylic copolymer (acrylic polymer 4).The weight average molecular weight of gained acrylic polymer 4 is 730,000, and acid number is 0.34 (mgKOH/g).
(acrylic polymer 5)
95 parts by weight of acrylic acid 2-Octyl Nitrites, 5 parts by weight of acrylic acid 2-hydroxy methacrylates, 0.2 weight portion are dissolved in the ethyl acetate as the Irgacure651 (manufacturing of Ciba-Geigy company, 50% ethyl acetate solution) and the 0.01 weight portion lauryl mercaptan of optical free radical propellant, have obtained solution.This solution irradiation ultraviolet radiation is carried out polymerization, obtained the ethyl acetate solution of polymer.And, with respect to solid constituent 100 weight portions of this solution, make 2-methacryloxyethyl isocyanates (clear and electrician company makes, the Karenz MOI) reaction with it of 7 weight portions, obtained acrylic copolymer (acrylic polymer 5).The weight average molecular weight of gained acrylic polymer 5 is 920,000, and acid number is 1.00 (mgKOH/g).
[table 1]
Weight average molecular weight Acid number (mgKOH/g)
Acrylic polymer 1 700000 0.86
Acrylic polymer 2 760000 6.73
Acrylic polymer 3 890000 0.58
Acrylic polymer 4 730000 0.34
Acrylic polymer 5 920000 1.00
And, as the material of the composition that is configured for forming non-adhesive layer, prepared following compound.
Photoepolymerizationinitiater initiater: Irgacure 651 (manufacturing of Ciba Speciality Chemicals company)
(filler)
The manufacturing of SC4050:Adomertech company, silica filler, average grain diameter: 1 μ m
The manufacturing of SC2050:Adomertech company, silica filler, average grain diameter: 0.5 μ m
The manufacturing of SC1050:Adomertech company, silica filler, average grain diameter: 0.3 μ m
(oligomer)
U324A: the manufacturing of Xin Zhong village chemical industrial company, urethane acrylates quasi-oligomer (the urethane acrylates quasi-oligomer of 10 officials energy), weight average molecular weight: 1,300
UA340P: the manufacturing of Xin Zhong village chemical industrial company, urethane acrylates quasi-oligomer (2 officials energy), weight average molecular weight: 12,000
UN7600: industrial group's manufacturing on the root, urethane acrylates quasi-oligomer (2 officials energy), weight average molecular weight: 11,500
UN7700: industrial group's manufacturing on the root, urethane acrylates quasi-oligomer (2 officials energy), weight average molecular weight: 20,000
The manufacturing of EBECRYL12:Daicel scitec company, polypropylene glycol triacrylate, weight average molecular weight: 780
(embodiment 1)
Mix the U324A of 100 weight portion aforesaid propylene acids polymer, 1,1 weight portion Irgacure, 651,15 weight portions, obtained composition as the urethane acrylates quasi-oligomer.Mercury vapor lamp with 2 160W shines 4000mJ/cm to resulting composition 2The light of energy solidifies composition, has obtained the non-bonding film as non-adhesive layer.The non-adhesive layer that adopts following method to measure to obtain like this is in 23 ℃ storage modulus and elongation at break, the temperature when this temperature of 23 ℃ is picking up semiconductor chip.
1) mensuration of storage modulus: it is wide that the full solidification non-adhesive layer of thick 0.5mm, wide 5mm is cut into 3cm, obtained specimen.The DVA-200 that makes with IT (ア イ テ イ) instrumentation company obtains specimen 23 ℃ storage modulus under the condition of 10Hz, deformation 0.1%.
2) elongation at break: the full solidification non-adhesive layer of preparing thickness 0.5mm, width 5mm and 7cm is as specimen.The stretching testing machine AG-IS that uses Shimadzu Seisakusho Ltd. to make stretches to specimen in 23 ℃ of conditions with 300mm/ minute speed, and the percentage elongation when measuring the generation fracture is as elongation at break.
Use above-mentioned non-adhesive layer, made cutting and chip join band by following main points.
(Nof Corp. makes to mix G-2050M, the acrylate copolymer that contains epoxy radicals, weight average molecular weight Mw:20 ten thousand) 15 weight portions, (big Japanese ink company makes EXA-7200HH, the dicyclopentadiene type epoxides) 70 weight portions, (big Japanese ink company makes HP-4032D, naphthalene type epoxides) 15 weight portions, (japan epoxy resin company makes YH-309, acid anhydride type curing agent) 38 weight portions, (four countries change into company and make 2MAOK-PW, imidazoles) 8 weight portions, (ciiso company makes S320, amino silane) (tokuyama company makes for 2 weight portions and MT-10, surface-hydrophobicized fumed silica) 4 weight portions have obtained mixture.The gained mixture is added in the methylethylketone (MEK) as solvent, make that solid constituent is 60%, and stir, obtained coating fluid.The gained coating fluid is coated on the mold release film, makes that thickness is 40 μ m, in baking oven,, on mold release film, formed adhesive phase in 110 ℃ of heat dryings 3 minutes.
Under 60 ℃, on the face of adhesive phase and the face opposition side mold release film side, the above-mentioned non-adhesive layer of lamination has obtained layered product.With the layered product stamping-out circular after, to be attached to from the adhesive phase side on the face of non-adhesive layer and the face opposition side laminating adhesive layer as the PE band #6318-B of cutting film (bonding film that Sekisui Fine Chemical Co., Ltd. makes, the bonding film that forms being formed with the rubber adhesive layer of thick 10 μ m on the one side of the polyethylene base material of thick 70 μ m).Then, it is circular to cut the film stamping-out, and makes the diameter of its diameter greater than adhesive phase.Like this, made cutting and the chip join band that has by mold release film/adhesive phase/non-adhesive layer/these 4 layers of stepped constructions that is laminated in order of cutting film.
(embodiment 2～11 and comparative example 1～5)
Shown in the table 2 described as follows, 3, change the kind and the cooperation ratio of the material of the composition that is used to form non-adhesive layer, in addition, obtained non-adhesive layer like that according to embodiment 1.
(evaluation)
As measure non-adhesive layer above-mentionedly, the results are shown in following table 2,3 at 23 ℃ storage modulus and elongation at break.
Measure gained cutting and the chip join non-adhesive layer of band and the peeling force between the adhesive phase by following main points.The results are shown in following table 2,3.
The mensuration of peeling force: under 60 ℃, non-adhesive layer is laminated on the one side of adhesive phase.Then, the face with the face opposition side that is fitted with non-adhesive layer with adhesive phase is attached on the corrosion resistant plate.Then, adhesive phase and corrosion resistant plate are fully fitted, obtained test body.Then, test body is fixed, and made adhesive phase following, non-adhesive layer is last.With 300mm/ minute speed, non-adhesive layer is applied power becoming with interface between the non-adhesive layer on the directions of 180 degree with adhesive phase, non-adhesive layer is peeled off from adhesive phase.At this moment, the AGS-100D that uses Shimadzu Seisakusho Ltd. to make measures and peels off required power, and the mensuration width is 25mm, with the mean value of income value as peeling force.
And, the evaluation when making semiconductor chip by following main points.
Peel off cutting and the chip join mold release film of being with from adhesive phase, expose adhesive phase.Under 60 ℃ temperature, the adhesive phase that will expose is laminated on the one side of silicon wafer (thickness 80 μ m) of 8 inches of diameters, has made assess sample.
Use cutter sweep DFD651 (manufacturings of disco company) assess sample to be cut into the chip of 10mm * 10mm size, estimate when cutting chip and have or not and fly up with the rate of delivery of 50mm/ second.In addition, observe on the cutting swarf have or not the beard shape, the semiconductor chip flawless is arranged.The results are shown in table 2,3.The implication of table 2,3 evaluation symbol is as follows.
Zero: do not have fully that chip flies up, beard shape cutting swarf and a crackle
△: chip flies up, any one is arranged in beard shape cutting swarf and the crackle
*: chip flies up, have any two in beard shape cutting swarf and the crackle
After the cutting, use stripper bestem D-02 (manufacturing of canon machinery (キ ヤ ノ Application マ シ one Na リ one) company),, jack-up speed 5mm/ second square and picking up under the condition of 23 ℃ of temperature at opening folder (collet) size 8mm, the semiconductor chip of cutting apart is picked up continuously, estimate and whether can pick up.The results are shown in table 2,3.The implication of table 2,3 evaluation symbol is as follows.
Zero: the ratio of the semiconductor chip that can't pick up is 0%
△: the ratio of the semiconductor chip that can't pick up is 1～15%
*: the ratio of the semiconductor chip that can't pick up is more than 16%
Figure G2008800246358D00281

Claims (11)

1. cutting and chip join be with band, and this cutting and chip join possess adhesive phase and are layered in non-adhesive layer on this adhesive phase with being with; Wherein,
Described non-adhesive layer forms by containing the composition of acrylic polymer as principal component,
Under the temperature when picking up semiconductor chip, the storage modulus of described non-adhesive layer is 1～400MPa, and elongation at break is 5～100%,
Described cutting and chip join also possess the cutting film with band, described cutting film has basis material and is layered in adhesive phase on this basis material one side, on the opposite face of the one side with being laminated with described adhesive phase that described cutting film is layered in described non-adhesive layer by its adhesive phase one side.
2. described cutting of claim 1 and chip join are with band, and wherein, described non-adhesive layer is formed by crosslinked body, and described crosslinked body is to contain acrylic polymer and carry out crosslinked obtaining as the composition of principal component by making.
3. described cutting of claim 1 and chip join are with being with, and wherein, the peeling force between described non-adhesive layer and the described adhesive phase is in the scope of 1～15N/m.
4. described cutting of claim 2 and chip join are with being with, and wherein, the peeling force between described non-adhesive layer and the described adhesive phase is in the scope of 1～15N/m.
5. each described cutting and chip join are with band in the claim 1～4, and wherein, described composition also comprises oligomer, described oligomer have can with two keys of acryloyl group reaction, and weight average molecular weight is 100～50000.
6. described cutting of claim 5 and chip join are with being with, wherein, described oligomer has at least a kind of skeleton that is selected from polyether skeleton, polyester backbone, butadiene skeleton, polyurethane skeleton, silicate skeleton, isoprene skeleton, poly-alkyl skeleton, polyacrylonitrile skeleton, Merlon skeleton and the dicyclopentadiene skeleton.
7. each described cutting and chip join are with being with in the claim 1～4, and wherein, described non-adhesive layer comprises the filler powder of average grain diameter 0.1～10 μ m.
8. described cutting of claim 5 and chip join are with being with, and wherein, described non-adhesive layer comprises the filler powder of average grain diameter 0.1～10 μ m.
9. described cutting of claim 6 and chip join are with being with, and wherein, described non-adhesive layer comprises the filler powder of average grain diameter 0.1～10 μ m.
10. the manufacture method of semiconductor chip, it possesses following step:
Prepare each described cutting and chip join band and semiconductor wafer in the claim 1～9,
Cutting and chip join with the opposing face of the one side of being with described adhesive phase, that be laminated with described non-adhesive layer on the described semiconductor wafer of applying,
Describedly be fitted with cutting and chip join is cut together with described adhesive phase with the semiconductor wafer of being with, be divided into one by one semiconductor chip and
After the cutting, the described adhesive phase that is fitted with described semiconductor chip is peeled off from described non-adhesive layer, semiconductor chip is taken out together with described adhesive phase.
11. the manufacture method of the described semiconductor chip of claim 10 wherein, after the cutting, does not change the peeling force between described adhesive phase and the described non-adhesive layer, and semiconductor chip is taken out.
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