CN109599354A - A kind of structure and method of the transfer of Micro-LED flood tide - Google Patents
A kind of structure and method of the transfer of Micro-LED flood tide Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
A kind of structure of Micro-LED flood tide transfer, which is multi-layer film structure, and be divided into three layers, including protective film layer, interim bonding glue-line and macromolecule transparent membrane tensile layer: the interim bonding glue-line is middle layer；The protective film layer is covered on the adhesive surface of interim bonding glue-line；The surface of macromolecule transparent membrane tensile layer is arranged in interim bonding glue-line；Interim bonding glue-line is for the viscous chip taken on wafer.It is an object of the invention to propose the structure and transfer method of a kind of Micro-LED flood tide transfer, realizes the flood tide transfer of Micro-LED and precisely place.
Description
Technical field
The present invention relates to semiconductor processing technology field, the especially a kind of structure and method of the transfer of Micro-LED flood tide.
Background technique
Micro-LED technology, i.e. LED miniatureization and matrixing technology.Refer to the high density integrated on a single die
The LED array of microsize, as LED display each pixel can addressing, be operated alone and light, it is aobvious that outdoor LED can be regarded as
Pixel distance is reduced to micron order from grade by the miniature version of display screen.And Micro-LED display, then it is that bottom is used
LED display driver circuit is made in normal CMOS integrated circuit fabrication process, then makes on the integrated of MOCVD machine again
LED array, to realize miniature display screen, that is, the scaled down version of described LED display.
The performance of Micro-LED advantage it is obvious that it inherits the high efficiency of inorganic LED, high brightness, high-reliability and anti-
The features such as fast between seasonable, and have the characteristic that self-luminous is not necessarily to backlight, more energy conservation, mechanism, are simple, small in size, slim etc. excellent
Gesture.And OLED is compared, color is easier accurately debugging, has longer luminescent lifetime and higher brightness and has preferable
Stability of material, the advantages that service life is long, askiatic branding, therefore be frivolous and savings advantage the display skill of tool another after OLED
Art.
Likewise, Micro-LED chip usually after completing, is needed a large amount of (tens of thousands of to several necessarily)
Micro-LED chip, which is transferred on drive circuit board, forms LED array.The technology of main flood tide transfer is divided into several classes at present
Other: 1) FinePick/Place is precisely grabbed and is sent, mainly a) electrostatic force: using the transfer head with dipolar configuration, being shifted
It imposes on generating positive and negative voltage respectively in the process, when grabbing LED from substrate, positive electricity is led to a silicon electrode, LED will be adsorbed onto transfer
On head, when needing LED to be placed on commitment positions, negative electricity is led to another silicon electrode, transfer can be completed；B) Van der Waals
Power: using boxing impression, and combined high precision motion control print head is allowed using Van der Waals force by changing the speed of print head
LED is attached in transfer head, or is printed on the predetermined position of target substrate piece；C) magnetic force: before being cut, in Micro-
It is mixed into the magnetic materials such as iron-cobalt-nickel on LED, utilizes electromagnetic adsorption and release；2) Selective Release is selectively released
It puts: without link is picked up, directly shifting LED from original substrate, major technique has patterning laser: using quasi- point
Sub- laser, is radiated at the mold size area of sparse dispersion on the gallium nitride thin slice on growth interface, then passes through ultraviolet exposure
Gallium metal and nitrogen are generated, accomplishes to be transferred to substrate in parallel, realizes accurately optical array；3) Self-Assembly self assembly,
It mainly uses fluid force technology: being rolled using brush bucket, so that LED is placed in liquid suspension, by fluid force, made on substrate
LED is fallen into the corresponding well on substrate；4) Roll Printing is transferred, and is shifted by way of printing, by TFT element
It picks up and is placed on required substrate, then LED element is picked up and is placed on the substrate for being placed with TFT element, to complete
Combine the active array type Micro-LED panel of two big elements.
Summary of the invention
In view of the foregoing drawbacks, it is an object of the invention to propose a kind of structure of Micro-LED flood tide transfer and transfer side
Method is realized the flood tide transfer of Micro-LED and is precisely placed.
To achieve this purpose, the present invention adopts the following technical scheme:
A kind of structure of Micro-LED flood tide transfer, which is multi-layer film structure, is divided into three layers, including protective film layer,
Interim bonding glue-line and macromolecule transparent membrane tensile layer；
The interim bonding glue-line is middle layer；
The protective film layer is covered on the adhesive surface of interim bonding glue-line；
The surface of macromolecule transparent membrane tensile layer is arranged in interim bonding glue-line；
Interim bonding glue-line is for the viscous chip taken on wafer.
Preferably, the interim bonding glue-line has viscosity；
The material of the interim bonding glue-line is poly- acrylate class, polyphenylethylene class, polyesters or propylene
One of acids thermoplastic resin is several；
Carbon-carbon double bond or ester group in above-mentioned material, which solve bonding easily under laser irradiation and make temporarily to be bonded glue-line, loses viscosity.
Preferably, the material of the macromolecule transparent membrane tensile layer is PI, PE, PET, PEN, PVC, BOPP or BOPS
It is one or several kinds of；
The light transmittance of the macromolecule transparent membrane tensile layer reaches 80% or more.
Further, the interim bonding glue-line, macromolecule transparent membrane tensile layer under a stretching force can homogeneous deformation,
Thickness is respectively 1 μm -1000 μm, 1 μm -1000 μm.
A kind of method of Micro-LED flood tide transfer, includes the following steps:
A) it picks up membrane structure using multilayer the chip on wafer is transferred on the interim bonding glue for tearing protective film off, every time
The chip being stained on transfer multilayer film on one or more pieces wafers；
B) multilayer is picked up film and carries out uniform expansion stretching by the requirement placed according to chip, increases the interval between chip,
Compensate the distance between chip bonding pad on bearing substrate；
C) chip for adjusting good position on multilayer film is aligned with the pad on bearing substrate, uses and sets above multilayer film
The laser irradiation for setting pattern makes chip be detached from interim bonding glue surface, is transferred on the pad of bearing substrate, completes at this time
The transfer of monochromatic Micro-LED chip；
D) putting for the same luminescence unit three primary colors Micro-LED chip can be completed using above-mentioned method a), b), c)
It sets.
Further, the flood tide transfer method is equally applicable to transfer or the problem core of other types microsize chip
The separation of piece is shifted.
Beneficial effects of the present invention: 1, the protective film layer in this programme can peel when in use, next, making
The chip taken on wafer is glued with interim bonding glue-line, and is temporarily bonded glue-line and is carried on macromolecule transparent membrane tensile layer,
Transparent membrane tensile layer can pull open the spacing between chip and laser irradiation will not be hindered temporarily to be bonded glue-line；2, ephemeral key
The characteristics of closing glue-line is by that can lose viscosity after laser irradiation, to keep the chip being pasted on interim bonding glue-line de-
It falls, achieved the effect that grab and shifts chip, material disclosed in this programme can reach said effect；3, this programme passes through
Multilayer pick up film can a large amount of chips of single transfer, improve the transfer efficiency of chip, multilayer transfer membrane has toughness and stretching
Plasticity can adjust clipping room between chip away from consolidating chip finally by the mode of laser irradiation by uniform expansion
Surely pad is arrived, transfer is completed；The efficiency and quality for the method transfer that this programme provides are all relatively good, using the side of adherency transfer
Formula, the chip type suitable for transfer are more.
Detailed description of the invention
Fig. 1 is the multi-layer film structure and its pickup chip wafer process schematic of one embodiment of the present of invention；
Fig. 2 is that the multi-layer film structure of one embodiment of the present of invention stretches process of expansion schematic diagram；
Fig. 3 is in one embodiment of the present of invention using patterning laser transfer to bearing substrate process schematic；
Fig. 4 is that three primary colors Micro-LED chip transfer schematic diagram is realized in one embodiment of the present of invention.
Wherein: 1- wafer 2-Micro-LED chip 3- protective film 4- is temporarily bonded glue 5- clear stretch film 6- and swashs
Light 7- substrate 8- three primary colors Micro-LED chip.
Specific embodiment
To further illustrate the technical scheme of the present invention below with reference to the accompanying drawings and specific embodiments.
As shown in Figs 1-4, a kind of structure of Micro-LED flood tide transfer, which is multi-layer film structure, is divided into three layers,
Including protective film layer 3, interim bonding glue-line 4 and macromolecule transparent membrane tensile layer 5；
The interim bonding glue-line 4 is middle layer；
The protective film layer 3 is covered on the adhesive surface of interim bonding glue-line 4；
The surface of macromolecule transparent membrane tensile layer 5 is arranged in interim bonding glue-line 4；
Interim bonding glue-line 4 is for the viscous chip taken on wafer.
Protective film layer 3 in this programme can peel when in use, after following, use interim bonding glue-line
4 are used to the viscous chip taken on wafer, and are temporarily bonded glue-line 4 then and are setting in transparent membrane tensile layer 5, for pull open chip it
Between spacing and be conducive to laser fire and be temporarily bonded glue-line 4.
Wherein, the interim bonding glue-line 4 has viscosity；
The material of the interim bonding glue-line 4 is poly- acrylate class, polyphenylethylene class, polyesters or propylene
One of acids thermoplastic resin is several；
Carbon-carbon double bond or ester group in above-mentioned material solved easily under laser irradiation bonding make temporarily to be bonded glue-line 4 lose it is viscous
Property.
The characteristics of interim bonding glue-line 4 is by that can lose viscosity after laser irradiation, to make to be pasted onto interim bonding
Chip on glue-line 4 falls off, to achieve the effect that chip feeding and blanking, material disclosed in this programme can reach upper
State effect.
Wherein, the material of the macromolecule transparent membrane tensile layer 5 is PI, PE, PET, PEN, PVC, BOPP or BOPS
It is one or several kinds of；
The light transmittance of the macromolecule transparent membrane tensile layer 5 reaches 80% or more.
Transparent thin film layer prime minister will have light transmittance, so that laser can pass through transparent thin film layer and be radiated at interim bonding
Glue-line 4, and transparent thin film layer will have the characteristics of capable of stretching.
In addition, homogeneous deformation under the interim bonding glue-line 4, macromolecule thin transparent power stretching action, thickness is respectively 1 μ
m-1000μm、1μm-1000μm。
Interim bonding glue-line 4 and macromolecule thin transparent thickness at 1 μm -1000 μm, avoid it is too thick not easily contained, too
It is thin to be easily deformed.
A kind of method of Micro-LED flood tide transfer, includes the following steps:
A) it picks up membrane structure using multilayer the chip on wafer is transferred on the interim bonding glue for tearing protective film off, every time
The chip being stained on transfer multilayer film on one or more pieces wafers；
B) multilayer is picked up film and carries out uniform expansion stretching by the requirement placed according to chip, increases the interval between chip,
Compensate the distance between chip bonding pad on bearing substrate；
C) chip for adjusting good position on multilayer film is aligned with the pad on bearing substrate, uses and sets above multilayer film
The laser irradiation for setting pattern makes chip be detached from interim bonding glue surface, is transferred on the pad of bearing substrate, completes at this time
The transfer of monochromatic Micro-LED chip；
D) putting for the same luminescence unit three primary colors Micro-LED chip can be completed using above-mentioned method a), b), c)
It sets.
This programme picks up film single by multilayer can carry chip in large quantities, improve the handling efficiency of chip, multilayer
Transfer membrane has the ability of toughness and stretching, so being not limited to the shape of product surface, and can be adjusted by uniform expansion
Clipping room between whole chip is away from being placed into pad for chip finally by the mode of laser irradiation, complete transfer；This programme mentions
The efficiency and quality of the method transfer of confession are all relatively good, and in such a way that adherency is carried, the workpiece type suitable for carrying is more.
In addition, the flood tide transfer method is equally applicable to transfer or the problem chip of other types microsize chips
Separation transfer.
Embodiment one
Membrane structure is picked up using the multilayer that clear PET film makees carrying substrate, and the chip on wafer is transferred to removing protection
On the interim bonding glue of film, the chip being stained on one or more pieces wafers on multilayer film is shifted every time；
Multilayer is picked up film and carries out uniform expansion stretching by the requirement placed according to chip, increases the interval between chip, is mended
Repay the distance between chip bonding pad on bearing substrate；
The chip that good position is adjusted on multilayer film is aligned with the pad on bearing substrate, using setting above multilayer film
The laser irradiation of good pattern, makes chip be detached from interim bonding glue surface, is transferred on the pad of bearing substrate, completes at this time single
The transfer of color Micro-LED chip.
Embodiment two
Membrane structure is picked up using the multilayer that clear PE N thin film makees carrying substrate, and the chip on wafer is transferred to removing protection
On the interim bonding glue of film, the chip being stained on one or more pieces wafers on multilayer film is shifted every time；
Multilayer is picked up film and carries out uniform expansion stretching by the requirement placed according to chip, increases the interval between chip, is mended
Repay the distance between chip bonding pad on bearing substrate；
The chip that good position is adjusted on multilayer film is aligned with the pad on bearing substrate, using setting above multilayer film
The laser irradiation of good pattern, makes chip be detached from interim bonding glue surface, is transferred on the pad of bearing substrate, completes at this time single
The transfer of color Micro-LED chip；
The chip of other two kinds of colors is transferred on the bearing substrate pad for being placed with chip using the above method, is completed
The placement of the same luminescence unit three primary colors Micro-LED chip.
Embodiment three
Membrane structure is picked up by the other types microsize core on wafer using the multilayer that clear PE film makees carrying substrate
Piece is transferred on the interim bonding glue for tearing protective film off, shifts the core being stained on one or more pieces wafers on multilayer film every time
Piece；
Multilayer is picked up film and carries out uniform expansion stretching by the requirement placed according to chip, increases the interval between chip, is mended
Repay the distance between chip bonding pad on bearing substrate；
The problem of using laser to labeled positioning, chip was irradiated, and problem chip is carried out separation transfer, completed
The chip on multilayer film is aligned with the pad on bearing substrate afterwards, above multilayer film using set chip chamber away from laser
Winding is irradiated, so that chip is detached from interim bonding glue surface, is transferred on the pad of bearing substrate, complete turning for chip at this time
It moves.
The technical principle of the invention is described above in combination with a specific embodiment.These descriptions are intended merely to explain of the invention
Principle, and shall not be construed in any way as a limitation of the scope of protection of the invention.Based on the explanation herein, the technology of this field
Personnel can associate with other specific embodiments of the invention without creative labor, these modes are fallen within
Within protection scope of the present invention.
Claims (6)
1. a kind of structure of Micro-LED flood tide transfer, which is characterized in that the structure is multi-layer film structure, is divided into three layers, including
Protective film layer, interim bonding glue-line and macromolecule transparent membrane tensile layer；
The interim bonding glue-line is middle layer；
The protective film layer is covered on the adhesive surface of interim bonding glue-line；
The surface of macromolecule transparent membrane tensile layer is arranged in interim bonding glue-line；
Interim bonding glue-line is for the viscous chip taken on wafer.
2. the structure of Micro-LED flood tide transfer according to claim 1, which is characterized in that the interim bonding glue-line
With viscosity；
The material of the interim bonding glue-line is poly- acrylate class, polyphenylethylene class, polyesters or acrylic compounds
One of thermoplastic resin is several；
Carbon-carbon double bond or ester group in above-mentioned material, which solve bonding easily under laser irradiation and make temporarily to be bonded glue-line, loses viscosity.
3. the structure of Micro-LED flood tide transfer according to claim 1, which is characterized in that the macromolecule thin transparent
The material of film stretching layer is the one or several kinds of PI, PE, PET, PEN, PVC, BOPP or BOPS；
The light transmittance of the macromolecule transparent membrane tensile layer reaches 80% or more.
4. the structure of Micro-LED flood tide transfer according to claim 1, which is characterized in that the interim bonding glue-line,
Macromolecule transparent membrane tensile layer under a stretching force can homogeneous deformation, thickness is respectively 1 μm -1000 μm, 1 μm -1000 μm.
5. a kind of method using the Micro-LED flood tide transfer of structure in claim 1, which is characterized in that including walking as follows
It is rapid:
A) membrane structure is picked up using multilayer the chip on wafer is transferred on the interim bonding glue for tearing protective film off, shift every time
The chip being stained on multilayer film on one or more pieces wafers；
B) multilayer is picked up film and carries out uniform expansion stretching by the requirement placed according to chip, increases the interval between chip, compensation
The distance between chip bonding pad on bearing substrate；
C) chip for adjusting good position on multilayer film is aligned with the pad on bearing substrate, uses and sets above multilayer film
The laser irradiation of pattern, makes chip be detached from interim bonding glue surface, is transferred on the pad of bearing substrate, completes at this time monochromatic
The transfer of Micro-LED chip；
D) placement of the same luminescence unit three primary colors Micro-LED chip can be completed using above-mentioned method a), b), c).
6. the method for Micro-LED flood tide transfer according to claim 5, which is characterized in that the flood tide transfer method
It is equally applicable to the transfer of other types microsize chip or the separation transfer of problem chip.
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| CN109950194A (en) * | 2019-04-11 | 2019-06-28 | 京东方科技集团股份有限公司 | A kind of chip transfer base substrate and chip transfer method |
| CN110379761A (en) * | 2019-07-18 | 2019-10-25 | 京东方科技集团股份有限公司 | Micro- light emitting diode transfer base substrate and device |
| CN110416124A (en) * | 2019-07-05 | 2019-11-05 | 深超光电（深圳）有限公司 | The transfer method of LED and the preparation method of LED display panel |
| CN110429051A (en) * | 2019-08-12 | 2019-11-08 | 深圳市思坦科技有限公司 | Chip transfer method |
| CN110491978A (en) * | 2019-09-19 | 2019-11-22 | 北京大学东莞光电研究院 | A kind of LED chip structure and preparation method thereof, using the flood tide transfer method of LED chip structure |
| CN110993749A (en) * | 2019-12-09 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Mass transfer method of micro light-emitting diode and display panel |
| CN111341682A (en) * | 2020-02-09 | 2020-06-26 | 纳晶科技股份有限公司 | Chip overhauling device and method for display substrate |
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| CN111863690A (en) * | 2019-04-29 | 2020-10-30 | 云谷（固安）科技有限公司 | Batch transfer head and processing method thereof |
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| CN109950194A (en) * | 2019-04-11 | 2019-06-28 | 京东方科技集团股份有限公司 | A kind of chip transfer base substrate and chip transfer method |
| CN111863690A (en) * | 2019-04-29 | 2020-10-30 | 云谷（固安）科技有限公司 | Batch transfer head and processing method thereof |
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