CN113270354B - Electrostatic field controlled chip array expansion and mass transfer method and system - Google Patents
Electrostatic field controlled chip array expansion and mass transfer method and system Download PDFInfo
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- CN113270354B CN113270354B CN202110426987.3A CN202110426987A CN113270354B CN 113270354 B CN113270354 B CN 113270354B CN 202110426987 A CN202110426987 A CN 202110426987A CN 113270354 B CN113270354 B CN 113270354B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
The invention relates to the technical field of semiconductor processing, in particular to a chip array expansion and mass transfer method controlled by an electrostatic field and a system thereof, which comprises the following steps: s10, transferring the chip to a grabbing head at the tail end of a wire harness which is vertically arrayed; s20, controlling the relative voltage of the wire harness and the electric field generator to adjust the dispersion radian of the wire harness; s30, detecting whether the chips at the tail ends of the wire harnesses are positioned on the same horizontal plane or not, and correcting the heights of the local chips until the heights of the chips are positioned on the same horizontal plane; s40, detecting the chip spacing, and aligning the chip at the tail end of the wire harness to a target bonding pad of the bearing substrate when the chip spacing is in a proper spacing; s50, separating the chip and transferring the chip to a target bonding pad of the bearing substrate; and S60, sequentially finishing the mass transfer of various chips to the same bearing substrate. The invention regulates and controls the bending diffusion of the wire harness by regulating and controlling the electrostatic field, thereby carrying out high-precision array expansion and transfer on the chip spacing, simplifying the process flow of chip mass transfer and improving the chip transfer efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a chip array expansion and mass transfer method controlled by an electrostatic field and a system thereof.
Background
The Micro-LED technology refers to the integration of a high-density Micro-sized LED array on a chip, for example, each pixel of an LED display screen can be addressed and independently driven to be lightened, and can be regarded as a miniature version of an outdoor LED display screen, and the distance between pixels is reduced from millimeter level to micron level. Usually, after the Micro-LED chips are manufactured, tens of thousands to tens of millions of Micro-LED chips are transferred to a driving circuit board to form an LED array. The major current technologies for mass transfer fall into several categories: (1) precise grabbing and transferring; (2) selective release: the LED is directly transferred from the original substrate without a picking-up link, and the main technology comprises patterning laser: irradiating a sparsely dispersed mold size area on a gallium nitride sheet on a growth interface by using excimer laser, and generating gallium metal and nitrogen by ultraviolet exposure to realize parallel transfer to a substrate and realize a precise optical array; (3) self-assembly, mainly using hydrodynamic techniques: rolling on the substrate by using the brush barrel to enable the LED to be placed in the liquid suspension, and enabling the LED to fall into the corresponding well on the substrate through fluid force; (4) and transferring, namely transferring by printing, picking up and placing the TFT elements on a required substrate, and picking up and placing the LED elements on the substrate on which the TFT elements are placed, thereby completing the active matrix type Micro-LED panel combining the two major elements. The method has high requirements on the technical level, complex process and operation and poor practicability and adaptability.
Chinese patent CN109599354A discloses a structure and a method for Micro-LED bulk transfer, which comprises the following steps: a) transferring the chips on the wafer to the temporary bonding glue with the protective film torn off by using a multilayer pick-up film structure, wherein one or more chips on the wafer are adhered to the multilayer film each time; b) uniformly expanding and stretching the multilayer pickup film according to the placement requirement of the chips, increasing the interval between the chips and compensating the distance between the chip bonding pads on the bearing substrate; c) aligning the chip with the adjusted position on the multilayer film with a bonding pad on the bearing substrate, irradiating the chip from the upper part of the multilayer film by adopting laser with a set pattern, separating the chip from the surface of the temporary bonding adhesive, and transferring the chip onto the bonding pad of the bearing substrate, wherein the transfer of the single-color Micro-LED chip is completed at the moment; d) the method of a), b) and c) can be used for placing the three primary colors Micro-LED chip of the same light-emitting unit. Although the scheme can realize the huge expansion and transfer of the chip, the multilayer pick-up film is required to have a temporary bonding layer and uniform expansion tensile property in the scheme, the huge expansion and transfer of the chip needs to use the carrier film, the expansion of the chip is realized through the stretching of the carrier film, and the expansion accuracy of the chip spacing and the efficiency of chip transfer are influenced.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides an electrostatic field controlled chip array expansion and mass transfer method, which avoids using a bearing film and improves the chip transfer efficiency and the chip expansion accuracy.
In order to solve the technical problems, the invention adopts the technical scheme that:
an electrostatic field controlled chip array expanding and mass transfer method is provided, which comprises the following steps:
s10, transferring the chips on the wafer to a grabbing head at the tail end of a wire harness which is vertically arrayed, wherein the starting end of the wire harness is fixed on a flexible fixing plate;
s20, after grabbing all chips by a grabbing head at the tail end of the wire harness, introducing high-voltage static electricity into the wire harness to generate a local electric field, and enabling the wire harness to be scattered; applying high-voltage static electricity with the same charge to an electric field generator arranged on the periphery of the wire harness to generate a specific constraint electric field, and controlling the relative voltage of the wire harness and the electric field generator to adjust the dispersion radian of the wire harness;
s30, detecting whether the terminal chips of the wire harnesses are positioned on the same horizontal plane through a visual detection system, and correcting the heights of the local chips until the heights of the chips are positioned on the same horizontal plane by adjusting the bending deformation of the flexible fixing plate;
s40, detecting the chip spacing through a visual detection system, and aligning the chip at the tail end of the wire harness to a target bonding pad of the bearing substrate when the chip spacing is in a proper spacing; when the chip spacing has errors, returning to the step S20 to adjust the chip spacing by controlling the relative voltage of the wire harness and the electric field generator;
s50, after the chip is aligned to a target bonding pad of the bearing substrate, the chip is separated from the grabbing head at the tail end of the wire harness and transferred to the target bonding pad of the bearing substrate;
s60, repeating the steps S10-S50, and sequentially finishing the mass transfer of the chips of various types to the same target bearing substrate.
The invention relates to a chip array expansion and mass transfer method controlled by an electrostatic field, which comprises the steps of grabbing a chip by a grabbing head at the tail end of a wire harness, leading high-voltage static electricity to the wire harness to enable the wire harness to generate a local electric field, dispersing the wire harness under the action of electric field force, and leading high-voltage static electricity with the same charge to a plurality of electric field generators to generate a specific restraint electric field, thereby controlling the bending radian of the wire harness. The wire harness is under the action of a constrained electric field, and the bending radian is fixed at a specific value when the electric field is constant, so that the purpose of expanding the chip spacing is achieved; after the wiring harness is aligned with the substrate, the chip is transferred to the position of the target bonding pad, so that massive transfer and accurate placement of the chip are achieved. The method regulates and controls the bending diffusion of the wire harness by regulating and controlling the electrostatic field, thereby carrying out high-precision array expansion and transfer on the chip spacing, simplifying the process flow of chip mass transfer, avoiding using a bearing film and improving the chip transfer efficiency.
Preferably, in step S10, the gripper is selected from one or more of an adhesive gripper, a van der waals gripper, an electrostatic gripper, and an adsorption gripper.
Preferably, in step S10, the chip is detached from the gripper head by local heating or laser irradiation of the gripper head at the end of the wire harness.
Preferably, in step S10, the center point of the chip is located on the central axis of the gripper head; the wire harness is kept vertical in a natural state and generates bending deformation under the action of electric field force.
Preferably, in step S20, a plurality of electric field generators are provided at different height positions of the wire harness, so as to form multi-level constraints on the wire harness; high-voltage static electricity with different intensities is applied to the electric field generators with different heights, and the bending radians of the wire harnesses with different heights are controlled.
Preferably, in step S30, a force is applied in a direction away from the wire harness with the center point of the flexible fixing board as a force point, so that the flexible fixing board is subjected to bending deformation.
The invention also provides an electrostatic field controlled chip massive array expanding and transferring system, which comprises a plurality of wire harnesses vertically arrayed in a natural state, wherein one end of each wire harness is fixed on the flexible fixing plate, the tail end of each wire harness is connected with a grabbing head for grabbing a chip, the wire harnesses and the flexible fixing plates are conductive structures, two ends of each flexible fixing plate are respectively connected with a first positive electrode and a first negative electrode, and the grabbing heads are positioned above the bearing substrate; an electric field generator is arranged on the periphery of the wire harness, and a visual detection system for detecting the distance between chips is arranged on one side of the tail end of the wire harness.
The electrostatic field controlled chip massive array expanding and transferring system regulates and controls the bending diffusion of the wiring harness by regulating and controlling the electrostatic field, thereby carrying out high-precision array expansion and transfer on the chip spacing, simplifying the technological process of chip massive transfer, avoiding using a bearing film and improving the chip transfer efficiency.
Further, the tips of the grippers are coated with temporary bonding glues having different viscosities at different temperatures.
Furthermore, the electric field generators are in multiple groups, and the multiple groups of electric field generators are vertically arrayed from top to bottom.
Further, the electric field generator comprises a zigzag conductor, a lead wound around the zigzag conductor, and a second positive electrode and a second negative electrode connected to both ends of the lead.
Compared with the prior art, the invention has the beneficial effects that:
according to the electrostatic field controlled chip array expansion and mass transfer method and system, the bending diffusion of the wiring harness is regulated and controlled by regulating and controlling the electrostatic field, so that high-precision array expansion and transfer are performed on the chip spacing, the process flow of chip mass transfer is simplified, a carrier film is avoided, and the chip transfer efficiency and the chip transfer precision are improved.
Drawings
FIG. 1 is a schematic view of the distribution of chips on a wafer;
FIG. 2 is a schematic view of a gripper head at the end of a wire harness gripping a chip;
FIG. 3 is a schematic diagram of an electric field generator disposed about the periphery of a wiring harness;
FIG. 4 is a schematic view of the harness fanning out under the effect of relative voltage;
FIG. 5 is a schematic view of the flexible fixing plate being deformed so that the chips are located at the same horizontal plane;
FIG. 6 is a schematic view of a chip being transferred off a target pad of a carrier substrate using laser irradiation;
in the drawings: 1. a wafer; 2. a chip; 3. a wire harness; 4. a head is grabbed; 5. a flexible fixing plate; 6. an electric field generator; 7. a vision inspection system; 8. a carrier substrate; 9. a target pad; 10. a first positive electrode; 11. a first negative electrode; 12. a second positive electrode; 13. a second negative electrode; 14. a laser beam.
Detailed Description
The present invention will be further described with reference to the following embodiments. Wherein the showings are for the purpose of illustration only and are shown by way of illustration only and not in actual form, and are not to be construed as limiting the present patent; to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. based on the orientation or positional relationship shown in the drawings, it is only for convenience of describing the present invention and simplifying the description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and are not to be construed as limiting the present patent, and the specific meaning of the terms may be understood by those skilled in the art according to specific circumstances.
Example one
Fig. 1 to 6 show an embodiment of the electrostatic field controlled chip array expansion and bulk transfer method of the present invention, comprising the following steps:
s10, transferring the chips 2 on the wafer 1 to a grabbing head 4 at the tail end of a wire harness 3 which is vertically arrayed, and fixing the starting end of the wire harness 3 on a flexible fixing plate 5 as shown in figures 1 and 2;
s20, after the grabbing head 4 at the tail end of the wire harness 3 grabs all the chips 2, high-voltage static electricity is introduced into the wire harness 3 to generate a local electric field, so that the wire harness 3 is scattered; applying high-voltage static electricity with the same charge to an electric field generator 6 arranged on the periphery of the wiring harness 3 to generate a specific constraint electric field, and controlling the relative voltage of the wiring harness 3 and the electric field generator 6 to adjust the dispersion radian of the wiring harness 3, as shown in fig. 3 and 4;
s30, detecting whether the chips 2 at the tail ends of the wire harnesses 3 are positioned on the same horizontal plane through a visual detection system 7, and correcting the heights of the local chips 2 to the extent that the heights of the chips 2 are positioned on the same horizontal plane by adjusting the bending deformation of the flexible fixing plate 5, as shown in FIG. 5;
s40, detecting the distance between the chips 2 through the visual detection system 7, and aligning the chip 2 at the tail end of the wire harness 3 to a target bonding pad 9 of the bearing substrate 8 when the distance between the chips 2 is in a proper distance; when the distance between the chips 2 has errors, returning to the step S20 to adjust the distance between the chips 2 by controlling the relative voltage of the wire harness 3 and the electric field generator 6;
s50, after the chip 2 is aligned to the target bonding pad 9 of the bearing substrate 8, the chip 2 is separated from the grabbing head 4 at the tail end of the wire harness 3 and transferred onto the target bonding pad 9 of the bearing substrate 8, as shown in FIG. 6;
and S60, repeating the steps S10 to S50 to sequentially complete the mass transfer of the chips 2 of various types to the same target bearing substrate 8.
In step S10, the wire harness 3 is made of a thin wire having a certain rigidity and capable of being kept upright in a natural state, and the wire harness 3 is bent by an electric field force. The gripping head 4 is selected from one or a combination of several of an adhesive gripping head 4, a van der waals gripping head 4, an electrostatic gripping head 4 and an adsorption gripping head 4, although the gripping form of the gripping head 4 is not limited to the above-mentioned gripping form, and other gripping forms capable of stably gripping the chip 2 and releasing the chip 2 under certain conditions may be applied to the present invention. The flexible fixing plate 5 has elastic deformability and can be bent and deformed according to the height of the adsorption chip 2. After the chips 2 adsorbed by the wire harness 3 are scattered, the chips 2 around the wire harness 3 are higher in height, the chips 2 in the central area are lower in height, and the flexible fixing plate 5 protrudes upwards inwards to correct the height. When the grabbing head 4 adopts the viscous grabbing head 4, the tail end of the grabbing head 4 is provided with temporary bonding glue with different viscosities at different temperatures, and when the temperature is lower, the temporary bonding glue has higher viscosity to adhere the chip 2; when the temperature is high or laser irradiation is used, the temporary bonding glue has low viscosity, and the adhered chip 2 can be released. In addition, the wiring harnesses 3 with different electric conduction capacities and dielectric constants can be selected to meet the process requirements of mass transfer of different chips 2, and the radian of the spreading is controlled by selecting the wiring harnesses 3 with different electric conduction capacities according to the quality, the size and the position of the chips 2.
In step S20, a plurality of electric field generators 6 are disposed at different height positions of the wire harness 3 to form multi-level constraint on the wire harness 3; high-voltage static electricity with different intensities is applied to the electric field generators 6 with different heights, and the bending radian of the wire harness 3 with different heights is controlled. The electric field generators 6 are positioned at different heights, and parameters such as the electric field intensity, the electric field action range, the electric field direction and the like can be regulated; the wire harness 3 is restrained in multiple stages, and high-voltage static electricity with different intensities is applied through the electric field generators 6 at different height positions so as to control the bending radian of the thin wire harness 3 with different heights.
In step S30, the center point of the flexible securing plate 5 is used as a stress point, and an acting force is applied in a direction away from the wire harness 3, so that the flexible securing plate 5 is bent and deformed. After the adsorbed chip 2 of pencil 3 scatters, pencil 3 all around chip 2 highly higher, central zone chip 2 highly lower to the central point of flexible fixed plate 5 is the stress point, and the direction of keeping away from pencil 3 is exerted the effort and is made flexible fixed plate 5 take place bending deformation and carry out the height correction to the chip 2 that the head 4 snatched is located same horizontal plane to grabbing.
Through the steps, the bending diffusion of the wiring harness 3 is regulated and controlled by regulating and controlling the electrostatic field, so that the high-precision array expansion and transfer are carried out on the distance between the chips 2, the process flow of the massive transfer of the chips 2 is simplified, and the transfer efficiency of the chips 2 is improved.
The method of the invention can be suitable for the massive transfer of Micro-LED chips with three primary colors or a plurality of other types of Micro chips to the same target bearing substrate 8 or the separation transfer of problem chips.
Example two
This embodiment is an embodiment of a specific application of a method for electrostatic field controlled expansion and mass transfer of a chip array, and includes the following steps:
s10, transferring the chips 2 on the wafer 1 to a grabbing head 4 at the tail end of a wire harness 3 which is vertically arrayed, fixing the starting end of the wire harness 3 on a flexible fixing plate 5, and detecting that the initial distance between the chips 2 is 0.5 mu m through a visual detection system 7;
s20, after the grabbing head 4 at the tail end of the wire harness 3 grabs all the chips 2, 110KV high-voltage static electricity is introduced into the wire harness 3 to generate a local electric field, and the wire harness 3 is scattered; applying the same charge high-voltage static electricity to five vertically arranged electric field generators 6 arranged on the periphery of the wiring harness 3 to generate a specific constraint electric field, and controlling the relative voltage of the wiring harness 3 and the electric field generators 6 to adjust the dispersion radian of the wiring harness 3;
s30, detecting whether the chips 2 at the tail ends of the wire harnesses 3 are positioned on the same horizontal plane or not through a visual detection system 7, and correcting the heights of the local chips 2 until the heights of the chips 2 are positioned on the same horizontal plane by adjusting the bending deformation of the flexible fixing plate 5;
s40, detecting the distance between the chips 2 through a visual detection system 7, and aligning the chip 2 at the tail end of the wire harness 3 to a target bonding pad 9 of the bearing substrate 8 when the distance between the chips 2 is 3.5 mu m; when the distance between the chips 2 has errors, returning to the step S20 to adjust the distance between the chips 2 by controlling the relative voltage of the wire harness 3 and the electric field generator 6;
s50, after the chip 2 is aligned to the target bonding pad 9 of the bearing substrate 8, performing laser irradiation on the grabbing head 4 to enable the chip 2 to be separated from the grabbing head 4 at the tail end of the wire harness 3 and transferred onto the target bonding pad 9 of the bearing substrate 8;
and S60, repeating the steps S10 to S50 to sequentially complete the mass transfer of the chips 2 of various types to the same target bearing substrate 8.
EXAMPLE III
This embodiment is an embodiment of a specific application of a method for electrostatic field controlled expansion and mass transfer of a chip array, and includes the following steps:
s10, transferring the chips 2 on the wafer 1 to a grabbing head 4 at the tail end of a wire harness 3 which is vertically arrayed, fixing the starting end of the wire harness 3 on a flexible fixing plate 5, and detecting that the initial distance between the chips 2 is 0.5 mu m through a visual detection system 7;
s20, after the grabbing head 4 at the tail end of the wire harness 3 grabs all the chips 2, introducing 220KV high-voltage static electricity into the wire harness 3 to generate a local electric field, and enabling the wire harness 3 to be scattered; applying the same charge high-voltage static electricity to 6 vertically arranged electric field generators 6 arranged on the periphery of the wiring harness 3 to generate a specific constraint electric field, and controlling the relative voltage of the wiring harness 3 and the electric field generators 6 to adjust the dispersion radian of the wiring harness 3;
s30, detecting whether the chips 2 at the tail ends of the wire harnesses 3 are positioned on the same horizontal plane or not through a visual detection system 7, and correcting the heights of the local chips 2 until the heights of the chips 2 are positioned on the same horizontal plane by adjusting the bending deformation of the flexible fixing plate 5;
s40, detecting the distance between the chips 2 through a visual detection system 7, and aligning the chip 2 at the tail end of the wire harness 3 to a target bonding pad 9 of the bearing substrate 8 when the distance between the chips 2 is at a proper distance of 4 mu m; when the distance between the chips 2 has errors, returning to the step S20 to adjust the distance between the chips 2 by controlling the relative voltage of the wire harness 3 and the electric field generator 6;
s50, after the chip 2 is aligned to the target bonding pad 9 of the bearing substrate 8, locally heating the wire harness 3 grabbing head 4 to 50 ℃, so that the chip 2 is separated from the grabbing head 4 at the tail end of the wire harness 3 and transferred onto the target bonding pad 9 of the bearing substrate 8;
and S60, repeating the steps S10 to S50 to sequentially complete the mass transfer of the chips 2 of various types to the same target bearing substrate 8.
Example four
The embodiment is an embodiment of a chip massive array expanding and transferring system controlled by an electrostatic field, and the system comprises a plurality of wire harnesses 3 vertically arrayed in a natural state, wherein one end of each wire harness 3 is fixed on a flexible fixing plate 5, the tail end of each wire harness 3 is connected with a grabbing head 4 used for grabbing a chip 2, each wire harness 3 and each flexible fixing plate 5 are of a conductive structure, two ends of each flexible fixing plate 5 are respectively connected with a first positive electrode 10 and a first negative electrode 11, and the grabbing heads 4 are positioned above a bearing substrate 8; an electric field generator 6 is arranged on the periphery of the wire harness 3, and a visual detection system 7 for detecting the distance between the chips 2 is arranged on one side of the tail end of the wire harness 3, as shown in fig. 2 to 6.
In the implementation of the embodiment, the chip 2 is grabbed by the grabbing head 4 at the tail end of the wire harness 3, high-voltage static electricity is introduced into the wire harness 3 through the first positive electrode 10 and the first negative electrode 11, so that the wire harness 3 generates a local electric field, the wire harness 3 is scattered under the action of an electric field force, meanwhile, the electric field generator 6 generates a constraint electric field, the wire harness 3 is under the action of the constraint electric field, and the bending radian is fixed at a specific value when the electric field is constant, so that the purpose of expanding the distance between the chips 2 is achieved; the distance between the chips 2 at the tail ends of the wire harnesses 3 is detected through the visual detection system 7, and the chips 2 are transferred to the positions of the target bonding pads 9 after the wire harnesses 3 are aligned with the substrate, so that the chips 2 are transferred in a large amount and placed accurately.
Wherein the tips of the grippers 4 are coated with temporary bonding glues having different viscosities at different temperatures. When the grabbing head 4 adopts the viscous grabbing head 4, the tail end of the grabbing head 4 is provided with temporary bonding glue with different viscosities at different temperatures, and when the temperature is lower, the temporary bonding glue has higher viscosity to adhere the chip 2; when the temperature is high or laser irradiation is used, the temporary bonding glue has low viscosity, and the adhered chip 2 can be released.
The electric field generators 6 are in multiple groups, and the multiple groups of electric field generators 6 are vertically arrayed from top to bottom. The electric field generator 6 includes a rectangular conductor, a wire wound around the rectangular conductor, and a second positive electrode 12 and a second negative electrode 13 connected to both ends of the wire. The electric field that electric field generator 6 of this embodiment formed is a space electric field, and this space electric field is for returning font indent electric field, and the high voltage static of different intensity is applyed to the font electric field generator 6 that returns of different height positions, and the crooked of different degree can take place for pencil 3 in different electric field positions, electric field generator 6 can regulate and control the direction isoparametric of electric field low-strength, electric field application range and electric field.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. An electrostatic field controlled chip array expansion and bulk transfer method, comprising the steps of:
s10, transferring the chips (2) on the wafer (1) to a grabbing head (4) at the tail end of a wire harness (3) which is vertically arrayed, and fixing the starting end of the wire harness (3) on a flexible fixing plate (5);
s20, after the grabbing head (4) at the tail end of the wire harness (3) grabs all the chips (2), high-voltage static electricity is introduced into the wire harness (3) to generate a local electric field, so that the wire harness (3) is scattered; the method comprises the following steps of applying high-voltage static electricity with the same charge to an electric field generator (6) arranged on the periphery of a wiring harness (3) to generate a specific constraint electric field, and controlling the relative voltage of the wiring harness (3) and the electric field generator (6) to adjust the dispersion radian of the wiring harness (3);
s30, detecting whether the chips (2) at the tail ends of the wire harnesses (3) are positioned on the same horizontal plane through a visual detection system (7), and correcting the heights of the local chips (2) until the heights of the chips (2) are positioned on the same horizontal plane by adjusting the bending deformation of the flexible fixing plate (5);
s40, detecting the distance between the chips (2) through a visual detection system (7), and aligning the chip (2) at the tail end of the wire harness (3) to a target bonding pad (9) of the bearing substrate (8) when the distance between the chips (2) is in a proper distance; when the distance between the chips (2) has errors, returning to the step S20 to adjust the distance between the chips (2) by controlling the relative voltage of the wire harness (3) and the electric field generator (6);
s50, after the chip (2) is aligned to a target bonding pad (9) of the bearing substrate (8), the chip (2) is separated from the grabbing head (4) at the tail end of the wire harness (3) and transferred to the target bonding pad (9) of the bearing substrate (8);
s60, repeating the steps S10 to S50, and sequentially finishing the mass transfer of the chips (2) of various types to the same target bearing substrate (8).
2. The electrostatic field controlled chip array expansion and bulk transfer method according to claim 1, wherein in step S10, the gripper (4) is selected from one or more of a viscous gripper (4), a van der waals gripper (4), an electrostatic gripper (4), and an adsorption gripper (4).
3. The electrostatic field controlled chip array expanding and bulk transferring method according to claim 2, wherein the chip (2) is detached from the gripper head (4) by local heating or laser irradiation of the gripper head (4) at the end of the wire harness (3) in step S10.
4. The electrostatic field controlled chip array expanding and bulk transferring method according to claim 1, wherein in step S10, the center point of the chip (2) is located on the central axis of the gripper head (4); the wire harness (3) is kept vertical in a natural state and generates bending deformation under the action of an electric field force.
5. The electrostatic field controlled chip array expansion and mass transfer method according to claim 1, wherein in step S20, a plurality of electric field generators (6) are provided at different height positions of the beam (3) to form multi-level constraints on the beam (3); high-voltage static electricity with different strengths is applied to the electric field generators (6) with different heights, and the bending radians of the wire harnesses (3) with different heights are controlled.
6. The electrostatic field controlled chip array expanding and bulk transferring method according to any one of claims 1 to 5, wherein in step S30, the flexible fixing plate (5) is bent and deformed by applying a force in a direction away from the wire harness (3) with the central point of the flexible fixing plate (5) as a force point.
7. The electrostatic field controlled chip massive array expanding and transferring system is characterized by comprising a plurality of wire harnesses (3) which are vertically arrayed in a natural state, wherein one end of each wire harness (3) is fixed on a flexible fixing plate (5), the tail end of each wire harness (3) is connected with a grabbing head (4) used for grabbing a chip (2), each wire harness (3) and each flexible fixing plate (5) are of a conductive structure, two ends of each flexible fixing plate (5) are respectively connected with a first positive electrode (10) and a first negative electrode (11), and each grabbing head (4) is positioned above a bearing substrate (8); an electric field generator (6) is arranged on the periphery of the wiring harness (3), and a visual detection system (7) for detecting the distance between the chips (2) is arranged on one side of the tail end of the wiring harness (3).
8. The electrostatic field controlled chip macro array expanding and transferring system according to claim 7, wherein the tips of the gripper heads (4) are coated with temporary bonding glues having different viscosities at different temperatures.
9. The electrostatic field controlled chip macro array expanding and transferring system according to claim 7, wherein the electric field generators (6) are in multiple groups, and the multiple groups of electric field generators (6) are vertically arrayed from top to bottom.
10. The electrostatic field controlled chip macro array expanding and transferring system according to claim 9, wherein the electric field generator (6) comprises a meander conductor, a wire wound around the meander conductor, and a second positive electrode (12) and a second negative electrode (13) connected to both ends of the wire.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599354A (en) * | 2018-12-07 | 2019-04-09 | 广东工业大学 | A kind of structure and method of the transfer of Micro-LED flood tide |
| CN109671670A (en) * | 2017-10-16 | 2019-04-23 | 行家光电股份有限公司 | The flood tide aligning method and system of microcomponent |
| KR20190127418A (en) * | 2018-05-04 | 2019-11-13 | 고려대학교 산학협력단 | A magnetic transfer Apparatus and a fabrication Method of a semiconductor light emitting diode by using the magnetic transfer Apparatus |
| CN111725123A (en) * | 2020-05-22 | 2020-09-29 | 深圳市隆利科技股份有限公司 | Method for manufacturing micro light-emitting diode display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200114077A (en) * | 2019-03-27 | 2020-10-07 | 삼성전자주식회사 | Micro led transfer device and micro led transferring method using the same |
-
2021
- 2021-04-20 CN CN202110426987.3A patent/CN113270354B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671670A (en) * | 2017-10-16 | 2019-04-23 | 行家光电股份有限公司 | The flood tide aligning method and system of microcomponent |
| KR20190127418A (en) * | 2018-05-04 | 2019-11-13 | 고려대학교 산학협력단 | A magnetic transfer Apparatus and a fabrication Method of a semiconductor light emitting diode by using the magnetic transfer Apparatus |
| CN109599354A (en) * | 2018-12-07 | 2019-04-09 | 广东工业大学 | A kind of structure and method of the transfer of Micro-LED flood tide |
| CN111725123A (en) * | 2020-05-22 | 2020-09-29 | 深圳市隆利科技股份有限公司 | Method for manufacturing micro light-emitting diode display device |
Non-Patent Citations (1)
| Title |
|---|
| 潘祚坚 等."面向显示应用的微米发光二极管外延".《物理学报》.2020,第69卷(第19期),第198501-1页至198501-19页. * |
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