CN104011836A - Film substrate for stealth dicing, film for stealth dicing, and method for manufacturing electronic component - Google Patents

Film substrate for stealth dicing, film for stealth dicing, and method for manufacturing electronic component Download PDF

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Publication number
CN104011836A
CN104011836A CN201280064243.0A CN201280064243A CN104011836A CN 104011836 A CN104011836 A CN 104011836A CN 201280064243 A CN201280064243 A CN 201280064243A CN 104011836 A CN104011836 A CN 104011836A
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China
Prior art keywords
layer
base material
cutting
resin
ionomer
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Granted
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CN201280064243.0A
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Chinese (zh)
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CN104011836B (en
Inventor
中野重则
锦织雅弘
桥本芳惠
宫下雄介
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Dow Mitsui Polychemicals Co Ltd
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Du Pont Mitsui Polychemicals Co Ltd
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Priority to CN201710077961.6A priority Critical patent/CN107057594B/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/306—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl acetate or vinyl alcohol (co)polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
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    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
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    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
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    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J7/00—Adhesives in the form of films or foils
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    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Abstract

Provided is a substrate for stealth dicing film in which the thickness is within the range of 50 [mu]m to 200 [mu]m inclusive, the initial stress is within the range of 9 MPa to 19 MPa inclusive, the expansion rate is within the range of 102 % to 120 % inclusive, the haze value is 10 or less, and the total light transmittance is 90 % or more.

Description

Film base material, the laser cutting manufacture method of film and electronic unit for laser cutting
Technical field
The present invention relates to film base material for a kind of stealthy cutting (stealth dicing), and use the manufacture method of film and electronic unit for the stealth cutting of this film base material.
Background technology
When cutting semiconductor chip (wafer), Yi Bian use cooling water and washings, Yi Bian cut off wafer by cutter, and in ensuing expansion process, the corresponding cutting of wafer of cutting off is expanded with film, thereby carried out the panelization of chip.At this moment, by the fixing semiconductor wafer of film for cutting, prevent dispersing of chip.
On the other hand, as the cutting method of semiconductor wafer, proposed to come by laser the method (for example,, referring to TOHKEMY 2007-245173 communique) of cutting semiconductor chip.For the patterning method that utilizes laser, all the time known have laser is gathered in wafer surface, make wafer surface absorbing laser, thereby excavate the ablated surface mode of ditch.In recent years, also proposed laser to be gathered in that wafer is inner to be formed after modification area, by the cutting film corresponding with wafer that stretch, thereby take aforementioned modification area cuts apart the method (for example, stealthy patterning method) of wafer as starting point.
In utilizing the patterning method of laser, when film irradiating laser is used in cutting, in order not hinder the laser of irradiation, minute pellet requires cutting to have high transparent with film.In addition,, for cutting film, also require the wafer having after Ear Mucosa Treated by He Ne Laser Irradiation to cut the proterties that can well carry out.
In the relevant item to above-mentioned situation, as the relevant technology of utilizing the patterning method of laser, for example, disclose the adhesive layer that comprises the tensile modulus of elasticity, bonding force etc. with regulation and there is the substrate layer of the tensile modulus of elasticity of regulation, and spreading rate and the mist degree cutting film (for example,, referring to TOHKEMY 2011-61097 communique) in prescribed limit.By this cutting film, can obtain height and cut rate.
As the cutting technique that uses ionomer, the base material for cutting belt (for example,, referring to TOHKEMY 2011-40449 communique) that possesses the layer that contains potassium ion cross-linked polymer is disclosed.According to this cutting belt base material, excellent aspect antistatic property.In addition, also disclose to have and usingd ionomer resin as raw polymer and coordinated the base sheet of crystallization dispersant and the sheet material for semiconductor wafer of adhesive phase (for example,, referring to TOHKEMY 2000-273416 communique and TOHKEMY 2000-345129 communique) stipulated.According to this semiconductor wafer sheet material, (expand) uniformity can be expanded.
In addition, as the cutting technique using containing the crosslinked resin of ionomer, as its base material film, the stress of having recorded by making Vicat softening point and being produced by thermal contraction increases in prescribed limit, thereby can be because of the lax cutting film (for example,, referring to TOHKEMY 2011-216508 communique) having problems after heat shrink operation.In addition from preventing the viewpoint consideration of threadization of palpus shape cutting swarf, a kind of ionomer resin (for example,, referring to TOHKEMY 2011-210887 communique) obtaining that is cross-linked with metal ions such as zinc or magnesium is also disclosed.
And then, disclose the adhesive coating layer that a kind of 30 μ m having used EMAA are thick and used between the expansion contact layer that 30 μ m of low density polyethylene (LDPE) are thick, the wafer of 3-tier architecture that has configured the intermediate layer that the 40 μ m that contain crystalline polypropylene are thick base material (for example,, referring to TOHKEMY 2003-158098 communique) for cutting belt.According to this wafer cutting belt base material, excellent aspect even dilatancy.In addition, a kind of use between 2 layers of low density polyethylene (LDPE) also disclosed, configured the fixing adhesive tape (for example,, referring to Japanese kokai publication hei 7-230972 communique) of using of semiconductor wafer of the 3-tier architecture of the central core that has used ethylene-methyl methacrylate-(acrylic acid 2-methyl-propyl ester) 3 membered copolymers or its zinc ion key resin.Fixing with adhesive tape according to this semiconductor wafer, the constriction in the time of can preventing from expanding and pick up adhering on pin (pickup pin).
Summary of the invention
Yet, although for the film for cutting of recording in TOHKEMY 2011-61097 communique, in efficient minute cutting board this point, there is adaptability to a certain degree, and for the base material for cutting belt of recording in TOHKEMY 2011-40449 communique, by having used potassium ion cross-linked polymer, can expect the improvement of antistatic property, but aspect the cutting property of the transparency or wafer, all have the situation that is not necessarily applicable to market demands.In addition, the sheet material of recording in TOHKEMY 2000-273416 communique and TOHKEMY 2000-345129 communique, imagination is cut by cutter, and is difficult to be applicable to use the cutting of laser.And then, in TOHKEMY 2011-216508 communique, disclose ionomer is applicable to the related content of adhesive tape for wafer process, but this is for solving the technology of existing problem while using cutter cutting, the processability in the time of cannot expecting laser cutting.
In TOHKEMY 2011-210887 communique, disclose ionomer has been applicable to the related content of adhesive tape for wafer process, but the disclosure is also for solving the technology of existing problem while using cutter cutting, the processability in the time of cannot expecting laser cutting.
As mentioned above, for cutting, with for the laser processing of film, expect further improvement.
In addition, the wafer cutting belt of recording in TOHKEMY 2003-158098 communique, with in base material, can be used the polyolefin such as polypropylene as the intermediate layer of constituting layer stack structure.In general, because the stress when extending such as polypropylene is very big, therefore particularly in stealthy patterning method, if after carrying out Ear Mucosa Treated by He Ne Laser Irradiation expansion cutting film, in expansion cutting easy generation albinism during with film.On the contrary, in the technology of recording as the Japanese kokai publication hei 7-230972 communique of the 3-tier architecture in intermediate layer at the floor that is configured to use 3 membered copolymers, due to the understressing of Early period of cane elongation, be therefore difficult to carry out well cutting of wafer.In this case, in order to improve the cutting property of wafer, must increase the propagation of adhesive tape, and increase the propagation of adhesive tape, the deflection of adhesive tape increases, and the possibility of result can be to generation harmful effects such as conveyance operations.
Said, in utilizing the cutting technique in the past of laser, when across cutting during with film irradiating laser, the viewpoint that affected by absorptions, scattering etc. to make the laser of irradiation to be gathered in wafer inside is considered, in fact not necessarily can guarantee the sufficient transparency.And then from determining the viewpoint consideration of laser irradiating position, the transparency of visibility region is necessary.
In addition, in utilizing the stealthy patterning method of laser, after Ear Mucosa Treated by He Ne Laser Irradiation, by expansion, cut with film and expansion cutting film equably, and using to cut and cut as starting point with the crack of the corresponding wafer of film inside.In order to improve cutting property at this moment, require the necessary stress of film for cutting, meet and can not produce dysgenic prescribed limit to other proterties such as albefactions.Particularly, when the understrressing of film is used in cutting, may not necessarily access cutting property fully.In addition,, for film for cutting, also require to possess antistatic behaviour.
The present invention In view of the foregoing completes, and it provides a kind of stealth cutting that is suitable for utilizing laser, film base material and the manufacture method of stealthy cutting with the electronic unit of film and cutting property of wafer excellence for the stealth cutting of the transparency and cutting property of wafer excellence.
The cutting property of so-called wafer, refers to the difficulty of cutting apart in the modification area that utilizes the formed wafer of laser inside.From obtaining the well viewpoint of cutting property, consider, cutting preferably possesses the following scope of the above 19MPa of the 9MPa stress of (preferred lower limit is for surpassing the scope of 10MPa) with film base material, and has more than 102% dilatancy (spreading rate).
The inventor etc. for improve make the stealth cutting set aforementioned substrates during with film possess adhesive layer and base material (following, be sometimes referred to as " stealthy cutting film base material ".) cutting property of wafer (that is, pre-stress) and dilatancy and being repeatedly studied.The present invention is by remaining suitable thickness by the thickness of aforementioned films base material, and the pre-stress of film base material and spreading rate are adjusted to the scope of regulation, obtained realizing the cutting property of film base material and the opinion of expansionary balance, and completed based on this opinion.
As described below for solving the concrete scheme of foregoing problems.
<1> stealthy cutting film base material, it can be as possessing the described base material of the stealth cutting of adhesive layer and base material with film, and thickness is the scope below the above 200 μ m of 50 μ m, pre-stress is the scope below the above 19MPa of 9MPa, spreading rate is more than 102% scope below 120%, haze value is below 10, and total light transmittance is more than 90%.
The stealth cutting film base material of <2> as described in <1>, it contains and is selected from the magnesium ion cross-linked polymer of ethene (methyl) acrylic acid series copolymer and the zinc ionomer of ethene (methyl) acrylic acid series copolymer, and the copolymerization ratio of the construction unit from (methyl) alkyl acrylate in copolymer is lower than the ionomer resin of 7 quality %.
The stealth cutting film base material of <3> as described in <2>, wherein, the described of at least one party of described magnesium ion cross-linked polymer and described zinc ionomer is over 10 quality % and below 30 quality % from the copolymerization ratio of (methyl) acrylic acid construction unit in copolymer.
The stealth cutting film base material of <4> as described in <2> or <3>, wherein, at least one degree of neutralization of described magnesium ion cross-linked polymer and described zinc ionomer is for surpassing below 0% and 60%.
The stealth cutting film base material of <5> as described in <2> or <3>, wherein, at least one degree of neutralization of described magnesium ion cross-linked polymer and described zinc ionomer is more than 10% below 40%.
The stealth cutting film base material of <6> as described in <1>, layer X, the 2nd layer of Z and the 1st layer of stepped construction that Y stacks gradually that it has the layer X contacting with described adhesive layer, the 1st layer of Y and the 2nd layer of stepped construction that Z stacks gradually or contact with described adhesive layer, and the thickness of described layer X, described layer Y and described layer Z is more than 10 μ m scope below 100 μ m.
The stealth cutting film base material of <7> as described in <6>, wherein, the described layer X contacting with adhesive layer contains Resin A, the modulus of flexural rigidity of described Resin A is the scope below the above 350MPa of 100MPa, described the 1st layer of Y contains resin B, the modulus of flexural rigidity of described resin B is the scope below the above 350MPa of 5MPa, described the 2nd layer of Z contains resin C, the modulus of flexural rigidity of described resin C is the scope below the above 350MPa of 50MPa
And the larger side's of absolute value the value of difference that deducts respectively the modulus of flexural rigidity of described resin B from the modulus of flexural rigidity of described Resin A or described resin C is the scope below the above 345MPa of 50MPa.
The stealth cutting film base material of <8> as described in <6> or <7>, wherein, the described layer X contacting with adhesive layer contains Resin A, and described Resin A is the ionomer of ethylene unsaturated carboxylic acid's 2 membered copolymers.
The stealth cutting film base material of <9> as described in <8>, wherein, in described 2 membered copolymers, by the content of the construction unit of unsaturated carboxylic acid derivative, be below the above 35 quality % of 1 quality %.
The stealth cutting film base material of <10> as described in any one in <6>～<9>, wherein, described the 1st layer of Y contains resin B, described resin B is for being selected from low density polyethylene (LDPE), straight chain shape low density polyethylene (LDPE), EVAc, ethylene unsaturated carboxylic acid's 2 membered copolymers and ionomer thereof, ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer thereof, and in ethylene unsaturated carboxylic acid's ester 2 membered copolymers at least a kind.
The stealth cutting film base material of <11> as described in any one in <6>～<10>, wherein, described the 2nd layer of Z contains resin C, and described resin C is at least a kind that is selected from ethylene unsaturated carboxylic acid's 2 membered copolymers and ionomer and ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer thereof.
The stealth cutting film base material of <12> as described in any one in <1>～<11>, it contains fusing point is 155 ℃ of above 185 ℃ of following antistatic agents.
The stealth cutting film base material of <13> as described in any one in <1>～<12>, its surface resistivity is 1 * 10 9Ω/sq above 1 * 10 12below Ω/sq.
<14> stealthy cutting film, it possesses the stealth cutting film base material described in any one in adhesive layer and <1>～<13>.
The manufacture method of a <15> electronic unit, it comprises and the stealth cutting described in <14> is sticked to the operation of chip back surface with film, and
From described stealthy cutting, by film side, to having adhered to described stealthy cutting, use the wafer illumination laser of film, and use film by the operation of wafer described in laser cutting across stealth cutting.
Mono-kind of <16> use film base material as stealth cutting the method with film base material, wherein, the thickness of described film base material is the scope below the above 200 μ m of 50 μ m, pre-stress is the scope below the above 19MPa of 9MPa, spreading rate is more than 102% scope below 120%, haze value is below 10, and total light transmittance is more than 90%.
The purposes with film for the manufacture of stealth cutting of a <17> film base material, wherein, the thickness of described film base material is the scope below the above 200 μ m of 50 μ m, pre-stress is the scope below the above 19MPa of 9MPa, spreading rate is more than 102% scope below 120%, haze value is below 10, and total light transmittance is more than 90%.
It should be noted that the number range of using in this manual "～" to represent refers to and contains the numerical value recorded before and after "～" as the scope of lower limit and higher limit.
invention effect
According to the present invention, can provide a kind of cutting that is suitable for utilizing laser, film base material and stealthy cutting film for the stealth cutting of the transparency and cutting property of wafer excellence.In addition,, according to the present invention, also provide a kind of manufacture method of electronic unit of cutting property of wafer excellence.
Accompanying drawing explanation
Fig. 1 means the summary sectional view of the configuration example of film of the stealth cutting in one embodiment of the present invention.
Fig. 2 means the summary sectional view of other configuration examples of film base material for the stealth cutting of Fig. 1.
Fig. 3 A means when cut crystal, the skeleton diagram when film irradiating laser is used in stealth cutting.
Fig. 3 B means when cut crystal, forms the skeleton diagram of the state of modification portion in wafer.
Fig. 4 means stealth cutting is applied to external stress with film, skeleton diagram when wafer-separate is a plurality of chip.
Embodiment
Below, with reference to accompanying drawing, stealth of the present invention is cut with film base material and used the stealth cutting of this film base material to describe by the manufacture method of film and electronic unit.
[film base material and stealthy cutting film for stealthy cutting]
With reference to Fig. 1～Fig. 4, stealth cutting is described with film 1, and by this explanation, stealthy cutting of the present invention is described in detail with film base material.Fig. 1 means the summary sectional view of the configuration example of film for stealthy cutting.
Stealthy cutting is by laser being gathered in to the inside of silicon wafer, forms modified layer (crack etc.) in wafer, and applies external stress by adhesive tape expansion etc., thereby carries out the cutting method that chip is cut apart.
As shown in Figure 1, stealthy cutting with film 1 possess stealthy for cutting film base material 11 (below, be called base material 11.) and be arranged on the adhesive layer 12 on base material 11.
Base material 11 can be configured to any form of single or multiple lift.When base material 11 is configured to multilayer, base material 11, for example as shown in Figure 2, can be configured to the structure that comprises 3-tier architecture, described 3-tier architecture is the 3-tier architecture stacked with forming layer 11X, intermediate layer 11Y (or 11Z) that the adhesive layer 12 of stealthy cutting with film contact and internal layer 11Z (or 11Y).
In stealthy patterning method, utilize the extending force of film for cutting, by wafer chip.When producing minute sized semiconductor chip by the stealthy patterning method in recent years receiving publicity, can directly use the cutting sheet material for cutter cutting, laser cutting all the time extensively utilizing.Yet when using this cutting sheet material in the past, the intensity (pre-stress) of sometimes expanding the initial stage can be too low.If the pre-stress of film is too low, extending force cannot fully be passed in the inner formed modification of wafer portion, is therefore difficult to wafer chip.That is to say, can not fully obtain the film of pre-stress, cannot cut apart each chip with line of cut, chip has formed a plurality of states that connect together, and the rate of manufacturing a finished product of semiconductor chip may decline.Therefore, in the present invention, in order to improve stealthy cutting by the cutting property of wafer of film base material (, early strength (also referred to as pre-stress)) and dilatancy, the thickness of aforementioned substrates is remained to the thickness of regulation, the pre-stress of aforementioned substrates and spreading rate are adjusted to the scope of regulation, thereby have realized cutting property and expansionary balance.
Particularly when base material is configured to multilayer, for with aforementioned cutting property of wafer (early strength) and the dilatancy similarly improved, layer 11Y (the 1st layer of Y) carried out stacked with layer 11Z (the 2nd layer of Z) with respect to the layer X contacting with adhesive layer, the pre-stress of base material is adjusted to the scope below the above 19MPa of 9MPa, thereby has realized cutting property and expansionary balance.In addition, film base material of the present invention has maintained the transparency of layer when forming stepped construction, swashs scattering of light, absorbs less, utilizes the flexibility (adaptability) of operation of stealthy cutting excellent.
Stealthy film 1 for cutting, it is simultaneously configured to adhesive surface, can be starting point for take by Ear Mucosa Treated by He Ne Laser Irradiation formed crack in wafer, cuts non-contactly the stealthy cutting of what is called of (separation) wafer.Particularly, as shown in Figure 3A, stealth cutting is placed on cutting bed 6 with film 1, sticks to the back side of wafer W, and across stealth cutting film 1 irradiating laser.By Ear Mucosa Treated by He Ne Laser Irradiation, laser L is conducted to the inside of wafer W, as shown in Figure 3 B, by laser, in the inside of wafer W, form a plurality of modification area W1.Then, as shown in Figure 4, by stealth cutting is applied to external stress with film 1, it is expanded to the direction of arrow, thereby take aforementioned modification area W1 is starting point, and wafer W is separated into each chip.
It should be noted that, stealthy film 1 for cutting, is not only applicable to above-mentioned stealth cutting, but also go for using cutter cutting method, utilize other cutting methods of laser.
(base material)
Base material can be configured to any form of individual layer or 2 layers of above multilayer.
～A. individual layer formation～
First, the situation that base material is configured to single layer structure describes.
Fig. 1 represents that base material 11 is configured to the example of single layer structure.In Fig. 1, base material 11 is to use the magnesium ion cross-linked polymer of ethene (methyl) acrylic acid series copolymer and/or the formed ionomer resin base material of zinc ionomer of ethene (methyl) acrylic acid series copolymer.
As magnesium ion cross-linked polymer, be preferably the magnesium ion cross-linked polymer that at least a portion of ethene (methyl) acrylic copolymer, ethene (methyl) alkyl acrylate copolymer or ethene (methyl) acrylic acid (methyl) alkyl acrylate copolymer is neutralized by magnesium.In copolymer, can be any of block copolymer, random copolymer, graft copolymer, and consider the transparency, preferably use 2 yuan of random copolymers, 3 yuan of random copolymers, the graft copolymer of 2 yuan of random copolymers or the graft copolymer of 3 yuan of random copolymers, more preferably 2 yuan of random copolymers or 3 yuan of random copolymers.
In aforementioned ionomer resin, preferred magnesium ion cross-linked polymer is to use in magnesium ion and the ionomer of following polymer gained, described polymer is that take by the synthetic ethene of high-pressure free radical polymerization is basis with (methyl) acrylic acid copolymer, and aforementioned (methyl) acrylic acid copolymerization ratio is for surpassing the polymer of 10 quality % and the scope below 30 quality %.Degree of neutralization based on magnesium ion is the scope over 0% to 60%, in the time of within the scope of this, and dilatancy and cutting property excellence.Preferred degree of neutralization is more than 10% scope below 60%, if within the scope of this, the transparency is excellent.Preferred degree of neutralization is more than 10% scope below 40%, if within the scope of this, the balance of dilatancy, cutting property and the transparency is excellent.
Wherein, excellent from the balance of dilatancy, processing and forming, cutting property and the transparency, in the viewpoint consideration of industrial easy acquisition, (methyl) the acrylic acid copolymerization ratio in magnesium ion cross-linked polymer is more preferably over 10 quality % and below 20 quality %.
As zinc ionomer, be preferably the zinc ionomer that at least a portion of ethene (methyl) acrylic copolymer, ethene (methyl) alkyl acrylate copolymer or ethene (methyl) acrylic acid (methyl) alkyl acrylate copolymer is neutralized by zinc.Copolymer and aforementioned magnesium ion cross-linked polymer are similarly, can be any of block copolymer, random copolymer or graft copolymer, and consider the transparency, be preferably 2 yuan of random copolymers, 3 yuan of random copolymers, the graft copolymer of 2 yuan of random copolymers or the graft copolymer of 3 yuan of random copolymers, more preferably 2 yuan of random copolymers or 3 yuan of random copolymers.
Preferred zinc ionomer, to use in zinc ion and the ionomer of following polymer gained, described polymer is that take by the synthetic ethene of high-pressure free radical polymerization is basis with (methyl) acrylic acid copolymer, and aforementioned (methyl) acrylic acid copolymerization ratio is for surpassing the polymer of 10 quality % and the scope below 30 quality %.Degree of neutralization based on zinc ion is the scope over 0% to 60%, in the time of within the scope of this, and dilatancy and cutting property excellence.Preferred degree of neutralization is more than 10% scope below 60%, if within the scope of this, the transparency is excellent.Preferred degree of neutralization is more than 10% scope below 40%, if within the scope of this, the balance of dilatancy, cutting property and the transparency is excellent.
Wherein, excellent from the balance of dilatancy, processing and forming, cutting property and the transparency, in the viewpoint consideration of industrial easy acquisition, (methyl) the acrylic acid copolymerization ratio in zinc ionomer is more preferably over 10 quality % and below 20 quality %.
Forming ethene (methyl) acrylic acid series copolymer of ionomer, is the copolymer of at least ethene and acrylic or methacrylic acid copolymerization, in addition, can be also and 3 yuan of the 3rd copolymer composition copolymerization multiple copolymers above.
As the monomer that forms multiple copolymer, except ethene and can with aforementioned (methyl) acrylic acid of this ethylene copolymer, as the 3rd copolymer composition, can copolymerization esters of unsaturated carboxylic acids (for example, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, Isooctyl acrylate monomer, methyl methacrylate, EMA, isobutyl methacrylate, dimethyl maleate, diethyl maleate etc. (methyl) alkyl acrylate), vinyl esters (for example, vinyl acetate, propionate etc.), unsaturated hydrocarbons (for example, propylene, butylene, 1, 3-butadiene, amylene, 1, 3-pentadiene, 1-hexene etc.), the oxide of vinyl sulfuric acid or vinyl nitric acid etc., halide-containing (for example, vinyl chloride, PVF etc.), containing primary of vinyl, secondary amine compound, carbon monoxide, sulfur dioxide etc.
Wherein, as aforementioned the 3rd copolymer composition, preferred esters of unsaturated carboxylic acids, more preferably (methyl) alkyl acrylate (the preferred carbon number at alkyl position is 1～4).
From the construction unit of aforementioned the 3rd copolymer composition in ethene (methyl) acrylic acid series copolymer, contain ratio, be preferably the scope that is less than 7 quality %.
Ionomer resin in the present invention, can contain esters of unsaturated carboxylic acids, but particularly preferably from construction unit shared ratio that contains in copolymer of (methyl) alkyl acrylate, is less than 7 quality %.If the ratio that contains from the construction unit of (methyl) alkyl acrylate is less than 7 quality %,, owing to having kept the stress of cutting with film, therefore can obtain more excellent cutting property.As the ratio that contains of the construction unit from (methyl) alkyl acrylate, be preferably below 5 quality %, more preferably do not contain construction unit from (methyl) alkyl acrylate (contain ratio: 0%[mass ratio]).
～B. multilayer formation～
Then the situation that, base material is configured to sandwich construction describes.
As shown in Figure 2, base material 11 can be configured to sandwich construction is set, described sandwich construction be selected from the layer 11X, the layer 11Y (the 1st layer of Y) that at least contact with adhesive layer 12 and layer 11Z (the 2nd layer of Z) with the stepped construction of this sequential cascade and the layer X, layer 11Z (the 2nd layer of Z) that at least contacts with aforementioned adhesion layer 12 and layer 11Y (the 1st layer of Y) with the stepped construction of this sequential cascade by 3 layers of sandwich construction forming above.
As shown in Figure 2, base material 11, by contacting with the adhesive layer 12 that is used for fixing wafer in one side, can form stealthy cutting film.When use film as stealthy cutting, as shown in Figure 2, " layer 11X contacting with adhesive layer " in the stepped construction of adhesive layer 12 and base material 11 connects airtight.Therefore the layer 11X, contacting with adhesive layer is set to be positioned at the top layer (outermost layer) of stepped construction.
When base material 11 has the layer X contacting with adhesive layer, the 1st layer of Y and the 2nd layer of Z with the stepped construction of this arranged in order, the 1st layer of Y becomes the intermediate layer that forms 3-tier architecture.And, this stepped construction, except the layer X, the 1st layer of Y and the 2nd layer of Z that contact with adhesive layer 3 layers, can also be between the layer X contacting with adhesive layer and the 1st layer of Y or between the 1st layer of Y and the 2nd layer of Z, or on the 2nd layer of Z of 3-tier architecture one end of the 2nd layer of Z of layer the 1st layer of Y/ of X/ contacting with adhesive layer in conduct, other layers are further set, form 4 layers of above stepped construction.
In addition, about base material 11, other modes as having the stepped construction of the layer X, the 1st layer of Y and the 2nd layer of Z that contact with adhesive layer, can also configure the 1st layer of Y and the 2nd layer of Z conversely, form layer X that contact with adhesive layer, the 2nd layer of Z and the 1st layer of Y with the stepped construction of this arranged in order.At this moment, the 2nd layer of Z becomes the intermediate layer that forms 3-tier architecture.Same when the situation of this stepped construction and said structure, can also be between the layer X contacting with adhesive layer and the 2nd layer of Z or between the 2nd layer of Z and the 1st layer of Y, or on the 1st layer of Y of 3-tier architecture one end of the 1st layer of Y of layer the 2nd layer of Z/ of X/ contacting with adhesive layer in conduct, other layers are further set, form 4 layers of above stepped construction.
[the layer X contacting with adhesive layer]
As shown in Figure 2, the layer X contacting with adhesive layer, and for example, for fixed wafer, the layer that connected airtight by the formed adhesive layer 12 of adhesive, and at least contain resin (in this manual, also referred to as " Resin A ").As the method for connecting airtight, can adopt and use known method, such as gravure roll coating machine, reverse roll coater, mixing roll coater, dip roll coating machine, excellent painting machine, blade coating machine, flush coater etc. is directly coated on the method on layer X face by adhesive; Or by above-mentioned known method, adhesive is coated on releasing sheet and is arranged after adhesive layer, be bonded in layer X upper, the method for transfer printing adhesive layer etc.As the Resin A of layer X, can preferably use there is polarity, the resin good with the compatibility of adhesive that is preferably configured to ultra-violet solidified adhesive layer 12.As described later, adhesive layer 12 is preferably configured to ultra-violet solidified layer, can preferably use in this case the resin well connecting airtight keeping with ultra-violet solidified composition to form.
The layer X contacting with adhesive layer contains Resin A.As the modulus of flexural rigidity of aforementioned resin A, be preferably the scope below the above 350MPa of 100MPa.The modulus of flexural rigidity of Resin A, in aforementioned range, represents to be adapted to pass through the processing (cut processing, particularly pre-stress maintains) that stealthy cutting is carried out.Wherein, from the viewpoint of cutting property of wafer, consider, the modulus of flexural rigidity of Resin A is more preferably below the above 350MPa of 150MPa, more preferably below the above 350MPa of 180MPa.
The Resin A containing in X as the layer contacting with adhesive layer, is preferably thermoplastic resin, and olefin polymer more preferably, for example, for containing ethene and unsaturated carboxylic acid as ethylene unsaturated carboxylic acid's based copolymer of copolymer composition.Wherein, can preferably use the ionomer of 2 membered copolymers (ethylene unsaturated carboxylic acid's 2 membered copolymers) of ethene and unsaturated carboxylic acid copolymerization.By using the ionomer of ethylene unsaturated carboxylic acid's 2 membered copolymers, the transparency (mist degree and total light transmittance) and cutting property excellence.
In aforementioned ethylene unsaturated carboxylic acid 2 membered copolymers of raw polymer that become ionomer, by the construction unit of unsaturated carboxylic acid derivative containing proportional, be preferably the scope below the above 35 quality % of 1 quality %, more preferably the scope below the above 25 quality % of 5 quality %, is particularly preferably the scope below the above 20 quality % of 10 quality %.By the construction unit of unsaturated carboxylic acid derivative containing proportional be more than 1 quality %, represent to contain energetically this construction unit, by containing unsaturated carboxylic acid, the transparency, cementability become good.By the construction unit by unsaturated carboxylic acid derivative containing proportional be below 35 quality %, can maintain practical thermal endurance.
In addition, proportional as containing of the construction unit by ethylene derivative, be preferably the scope below the above 65 quality % of 99 quality %, more preferably the scope below the above 80 quality % of 90 quality %.
As the unsaturated carboxylic acid that forms ethylene unsaturated carboxylic acid's 2 membered copolymers, for example, can enumerate acrylic acid, methacrylic acid, maleic acid, fumaric acid, maleic anhydride, maleic acid monoesters etc., particularly preferably acrylic or methacrylic acid.
As neutralization, become the metal ion of carboxyl in 2 membered copolymers of raw polymer of ionomer, for example, can enumerate the alkali metal ions such as lithium ion, sodium ion, potassium ion; The ion of the polyvalent metals such as magnesium ion, calcium ion, zinc ion, aluminium ion etc.
In these ions, more preferably magnesium ion or zinc ion.These metal ions can be used separately a kind, also two or more can be used in combination.For ionomer, the scope below 100% by aforementioned metal ion with carboxyl in 2 membered copolymers neutralizes, and this degree of neutralization is preferably below 90%, more preferably more than 20% scope below 85%.
As magnesium ion cross-linked polymer, the magnesium ion cross-linked polymer that at least a portion of optimal ethylene (methyl) acrylic copolymer is neutralized by magnesium.In copolymer, can be any of block copolymer, random copolymer or graft copolymer, and consider the transparency, be preferably 2 yuan of random copolymers.
In aforementioned ionomer resin, preferred magnesium ion cross-linked polymer is to use in magnesium ion and the ionomer of following polymer gained, described polymer is that take by the synthetic ethene of high-pressure free radical polymerization is basis with (methyl) acrylic acid copolymer, and aforementioned (methyl) acrylic acid copolymerization ratio is for surpassing the polymer of 10 quality % and the scope below 30 quality %.Degree of neutralization based on magnesium ion is the scope over 0% to 60%, in the time of within the scope of this, and dilatancy and cutting property excellence.Preferred degree of neutralization is more than 10% scope below 60%, if within the scope of this, the transparency is excellent.Preferred degree of neutralization is more than 10% scope below 40%, if within the scope of this, the balance of dilatancy, cutting property and the transparency is excellent.
Wherein, excellent from the balance of dilatancy, processing and forming, cutting property and the transparency, in the viewpoint consideration of industrial easy acquisition, (methyl) the acrylic acid copolymerization ratio in magnesium ion cross-linked polymer is more preferably over 10 quality % and below 20 quality %.
As zinc ionomer, the zinc ionomer that at least a portion of optimal ethylene (methyl) acrylic copolymer is neutralized by zinc.Copolymer and aforementioned magnesium ion cross-linked polymer similarly, can be any of block copolymer, random copolymer or graft copolymer, and consider the transparency, be preferably 2 yuan of random copolymers.
Preferred zinc ionomer, to use in zinc ion and the ionomer of following resin gained, described resin is that take by the synthetic ethene of high-pressure free radical polymerization is basis with (methyl) acrylic acid copolymer, and aforementioned (methyl) acrylic acid copolymerization ratio is for surpassing the resin of 10 quality % and the scope below 30 quality %.Degree of neutralization based on zinc ion is the scope over 0% to 90%, in the time of within the scope of this, and dilatancy and cutting property excellence.Preferred degree of neutralization is more than 10% scope below 90%, if within the scope of this, the transparency is excellent.
Wherein, excellent from the balance of dilatancy, processing and forming, cutting property and the transparency, in the viewpoint consideration of industrial easy acquisition, (methyl) the acrylic acid copolymerization ratio in zinc ionomer is more preferably over 10 quality % and below 20 quality %.
As the ionomer that forms the layer X contacting with adhesive layer, from the viewpoint of easy acquisition, consider, be preferably magnesium (Mg) ionomer of ethylene acrylic acid co polymer or magnesium (Mg) ionomer of zinc (Zn) ionomer and ethylene methacrylic acid copolymer or zinc (Zn) ionomer.
As the thickness of the aforementioned layer X contacting with adhesive layer, be preferably the scope below the above 100 μ m of 10 μ m.This thickness, in aforementioned range, represents to be adapted to pass through the processing (cut processing, particularly pre-stress maintains) that stealthy cutting is carried out.The preferred thickness of the layer X contacting with adhesive layer is below the above 80 μ m of 15 μ m.
As the layer X contacting with adhesive layer, at the thickness ratio of stealth cutting in film base material, from the viewpoint of the steady production as film base material, consider, be preferably the more than 10% of film base material integral thickness.From realizing the viewpoint of cutting property and expansionary balance, consider, the thickness ratio of the 1st layer of Y is preferably the more than 20% of film base material integral thickness.
[the 1st layer of Y]
Form the layer 11Y (the 1st layer of Y) of the stepped construction of base material 11, preferably set as being arranged on the aforementioned layer X contacting with adhesive layer and the intermediate layer (the symbol 11Y of Fig. 2) between layer 11Z described later (the 2nd layer of Z), or the internal layer (the symbol 11Y of Fig. 2) for arranging across layer 11Z (the 2nd layer of Z) with respect to the aforementioned layer X contacting with adhesive layer.
The 1st layer of Y contains resin B.As the modulus of flexural rigidity of aforementioned resin B, be preferably the scope below the above 350MPa of 5MPa.The modulus of flexural rigidity of resin B, in aforementioned range, represents to be adapted to pass through the processing (cut processing, particularly pre-stress maintains) that stealthy cutting is carried out.Wherein, from expansionary viewpoint, consider, the modulus of flexural rigidity of resin B is more preferably below the above 330MPa of 5MPa, more preferably below the above 270MPa of 10MPa.
Resin B as containing in the 1st layer of Y, is preferably thermoplastic resin, for example, can preferably use low density polyethylene (LDPE) (low-density polyethylene; LDPE), straight chain shape low density polyethylene (LDPE) (linear low-density polyethylene; LLDPE), EVAc, ethylene unsaturated carboxylic acid's 2 membered copolymers and ionomer thereof, ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer, ethylene unsaturated carboxylic acid's ester 2 membered copolymers etc.
In the example of aforementioned resin B, for ethylene unsaturated carboxylic acid's 2 membered copolymers and ionomer and ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer thereof, by the construction unit of unsaturated carboxylic acid derivative containing the proportional scope being preferably below the above 35 quality % of 1 quality %, more preferably the scope below the above 25 quality % of 5 quality %, is particularly preferably the scope below the above 20 quality % of 10 quality %.By the construction unit of unsaturated carboxylic acid derivative containing proportional be more than 1 quality %, represent to contain energetically this construction unit, by containing unsaturated carboxylic acid, the transparency, metal adhesive become good.Construction unit by unsaturated carboxylic acid derivative containing proportional be below 35 quality %, can maintain practical thermal endurance.
In addition, proportional as containing of the construction unit by ethylene derivative, be preferably the scope below the above 65 quality % of 99 quality %, more preferably the scope below the above 80 quality % of 90 quality %.
As the unsaturated carboxylic acid that forms aforementioned 2 membered copolymers or aforementioned 3 membered copolymers, for example, can enumerate acrylic acid, methacrylic acid, maleic acid, fumaric acid, maleic anhydride, maleic acid monoesters etc., and particularly preferably acrylic or methacrylic acid.
As the esters of unsaturated carboxylic acids that forms aforementioned 3 membered copolymers, for example, can enumerate methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, Isooctyl acrylate monomer, methyl methacrylate, EMA, isobutyl methacrylate, dimethyl maleate, diethyl maleate etc. (methyl) alkyl acrylate etc.(methyl) alkyl acrylate (the preferred carbon number at alkyl position is 1～4) wherein, more preferably.
The metal ion that becomes carboxyl in 2 membered copolymers of raw polymer of ionomer or 3 membered copolymers as neutralization, is preferably magnesium, zinc, sodium, potassium etc., wherein, and more preferably magnesium and zinc.For ionomer, the scope below 100% by aforementioned metal ion with carboxyl in 2 membered copolymers neutralizes, and this degree of neutralization is preferably below 90%, more preferably more than 20% scope below 85%.
As magnesium ion cross-linked polymer, be preferably the magnesium ion cross-linked polymer that at least a portion of ethene (methyl) acrylic copolymer, ethene (methyl) alkyl acrylate copolymer or ethene (methyl) acrylic acid (methyl) alkyl acrylate copolymer is neutralized by magnesium.In copolymer, can be any of block copolymer, random copolymer or graft copolymer, and consider the transparency, preferably use 2 yuan of random copolymers, 3 yuan of random copolymers, the graft copolymer of 2 yuan of random copolymers or the graft copolymer of 3 yuan of random copolymers, more preferably 2 yuan of random copolymers or 3 yuan of random copolymers.
In aforementioned ionomer resin, preferred magnesium ion cross-linked polymer is to use in magnesium ion and the ionomer of following resin gained, described resin is that take by the synthetic ethene of high-pressure free radical polymerization is basis with (methyl) acrylic acid copolymer, and aforementioned (methyl) acrylic acid copolymerization ratio is for surpassing the resin of 10 quality % and the scope below 30 quality %.Degree of neutralization based on magnesium ion is the scope over 0% to 60%, in the time of within the scope of this, and dilatancy and cutting property excellence.Preferred degree of neutralization is more than 10% scope below 60%, if within the scope of this, the transparency is excellent.Preferred degree of neutralization is more than 10% scope below 40%, if within the scope of this, the balance of dilatancy, cutting property and the transparency is excellent.
Wherein, excellent from the balance of dilatancy, processing and forming, cutting property and the transparency, in the viewpoint consideration of industrial easy acquisition, (methyl) the acrylic acid copolymerization ratio in magnesium ion cross-linked polymer is more preferably over 10 quality % and below 20 quality %.
As zinc ionomer, be preferably the zinc ionomer that at least a portion of ethene (methyl) acrylic copolymer, ethene (methyl) alkyl acrylate copolymer or ethene (methyl) acrylic acid (methyl) alkyl acrylate copolymer is neutralized by zinc.Copolymer and aforementioned magnesium ion cross-linked polymer are similarly, can be any of block copolymer, random copolymer or graft copolymer, and consider the transparency, be preferably 2 yuan of random copolymers, 3 yuan of random copolymers, the graft copolymer of 2 yuan of random copolymers or the graft copolymer of 3 yuan of random copolymers, more preferably 2 yuan of random copolymers or 3 yuan of random copolymers.
Preferred zinc ionomer, to use in zinc ion and the ionomer of following resin gained, described resin is that take by the synthetic ethene of high-pressure free radical polymerization is basis with (methyl) acrylic acid copolymer, and aforementioned (methyl) acrylic acid copolymerization ratio is for surpassing the resin of 10 quality % and the scope below 30 quality %.Degree of neutralization based on zinc ion is the scope over 0% to 90%, in the time of within the scope of this, and dilatancy and cutting property excellence.Preferred degree of neutralization is more than 10% scope below 90%, if within the scope of this, the transparency is excellent.
Wherein, excellent from the balance of dilatancy, processing and forming, cutting property and the transparency, in the viewpoint consideration of industrial easy acquisition, (methyl) the acrylic acid copolymerization ratio in zinc ionomer is more preferably over 10 quality % and below 20 quality %.
In the example of aforementioned resin B, ethylene unsaturated carboxylic acid's ester copolymer is preferably ethene (methyl) alkyl acrylate copolymer.
As (methyl) alkyl acrylate that forms ethene (methyl) alkyl acrylate copolymer, for example, can preferably enumerate methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, Isooctyl acrylate monomer, methyl methacrylate, EMA, isobutyl methacrylate, dimethyl maleate, diethyl maleate etc.
In the present invention, one of preferred mode is that the 1st layer of Y is set to be configured in layer X that contact with adhesive layer and the mode in the intermediate layer between the 2nd layer of Z.One of other optimal way is the mode that the 2nd layer of Z is set to be configured in the intermediate layer between layer X and the 1st layer of Y contacting with adhesive layer.
When the 1st layer of Y is set to be configured in the layer X contacting with adhesive layer of constituting layer stack structure and the intermediate layer between the 2nd layer of Z, be configured to than the layer of the layer X contacting with adhesive layer and the 2nd layer of Z softness, and from relaxing the stress (particularly pre-stress) as film base material, the viewpoint with the planning function is considered, as the resin B containing in the 1st layer of Y, for example, be preferably low density polyethylene (LDPE) (low-density polyethylene; LDPE), straight chain shape low density polyethylene (LDPE) (linear low-density polyethylene; LLDPE), EVAc, ethylene unsaturated carboxylic acid's 2 membered copolymers and ionomer thereof and ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer thereof.
In addition, when the 2nd layer of Z is set to be configured in the intermediate layer between layer X and the 1st layer of Y contacting with adhesive layer, from relaxing the stress (particularly pre-stress) as film base material, there is the planning function, in when expansion with the sliding of expansion platform contact with layer Y, the consideration of the viewpoint of adhesion inhibiting properties, as the resin C containing in the 2nd layer of Z, for example, be preferably low density polyethylene (LDPE) (low-density polyethylene; LDPE), straight chain shape low density polyethylene (LDPE) (linear low-density polyethylene; LLDPE), ethylene unsaturated carboxylic acid's 2 membered copolymers and ionomer thereof and ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer thereof.
As the thickness of aforementioned the 1st layer of Y, be preferably the scope below the above 100 μ m of 10 μ m.This thickness, in aforementioned range, represents to be adapted to pass through the processing (cut processing, particularly pre-stress maintains) that stealthy cutting is carried out.The preferred thickness of the 1st layer of Y is below the above 80 μ m of 15 μ m.
As the 1st layer of Y, at the thickness ratio of stealth cutting in film base material, from the viewpoint of the steady production as film base material, consider, be preferably the more than 10% of film base material integral thickness.From realizing the viewpoint of cutting property and expansionary balance, consider, the thickness ratio of the 1st layer of Y is preferably the more than 20% of film base material integral thickness.
[the 2nd layer of Z]
Form the layer 11Z (the 2nd layer of Z) of the stepped construction of base material 11, set the internal layer (the symbol 11Z of Fig. 2) for arranging across layer 11Y (the 1st layer of Y) with respect to the aforementioned layer X contacting with adhesive layer, or for being arranged on the aforementioned layer X contacting with adhesive layer and the intermediate layer (the symbol 11Z of Fig. 2) between aforementioned layers 11Y (the 1st layer of Y).
The 2nd layer of Z contains resin C.As the modulus of flexural rigidity of aforementioned resin C, be preferably the scope below the above 350MPa of 50MPa.The modulus of flexural rigidity of resin C, in aforementioned range, represents to be adapted to pass through the processing (cut processing, particularly pre-stress maintains) that stealthy cutting is carried out.Wherein, from the viewpoint of cutting property of wafer, consider, the modulus of flexural rigidity of resin C is more preferably below the above 330MPa of 50MPa, more preferably below the above 330MPa of 70MPa.
As the resin C containing in the 2nd layer of Z, be preferably thermoplastic resin, for example, can preferably use ethylene unsaturated carboxylic acid's 2 membered copolymers and ionomer thereof and ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer thereof.
In the example of aforementioned resin C, for ethylene unsaturated carboxylic acid's 2 membered copolymers and ionomer and ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer thereof, by the construction unit of unsaturated carboxylic acid derivative containing the proportional scope being preferably below the above 35 quality % of 1 quality %, the more preferably scope below the above 20 quality % of 5 quality %.By the construction unit of unsaturated carboxylic acid derivative containing proportional be more than 1 quality %, represent to contain energetically this construction unit, by containing unsaturated carboxylic acid, the transparency, metal adhesive become good.Construction unit by unsaturated carboxylic acid derivative containing proportional be below 35 quality %, can maintain practical thermal endurance.
In addition, proportional as containing of the construction unit by ethylene derivative, be preferably the scope below the above 65 quality % of 99 quality %, more preferably the scope below the above 80 quality % of 95 quality %.
For forming aforementioned 2 membered copolymers or the unsaturated carboxylic acid of aforementioned 3 membered copolymers and the detailed content that forms the esters of unsaturated carboxylic acids of aforementioned 3 membered copolymers, identical with esters of unsaturated carboxylic acids implication with the unsaturated carboxylic acid of 2 membered copolymers in the 1st layer of Y of formation explained above or 3 membered copolymers, and optimal way is also identical.
As neutralization, become the metal ion of the carboxyl in 2 membered copolymers of raw polymer of ionomer, for example, can enumerate the alkali metal ions such as lithium ion, sodium ion, potassium ion; The ion of the polyvalent metals such as magnesium ion, calcium ion, zinc ion, aluminium ion etc.
In these ions, more preferably magnesium ion or zinc ion.These metal ions can be used separately a kind, also two or more can be used in combination.For ionomer, the scope below 100% by aforementioned metal ion with carboxyl in 2 membered copolymers neutralizes, and this degree of neutralization is preferably below 90%, more preferably more than 20% scope below 85%.
In above-mentioned, as magnesium ion cross-linked polymer, be preferably the magnesium ion cross-linked polymer that at least a portion of ethene (methyl) acrylic copolymer, ethene (methyl) alkyl acrylate copolymer or ethene (methyl) acrylic acid (methyl) alkyl acrylate copolymer is neutralized by magnesium.
As zinc ionomer, be preferably the zinc ionomer that at least a portion of ethene (methyl) acrylic copolymer, ethene (methyl) alkyl acrylate copolymer or ethene (methyl) acrylic acid (methyl) alkyl acrylate copolymer is neutralized by zinc.
For the detailed content of these magnesium ion cross-linked polymers, zinc ionomer, and illustrated magnesium ion cross-linked polymer and zinc ionomer is same under the item of the 1st layer of Y explained above, and optimal way is also identical.
As the thickness of aforementioned the 2nd layer of Z, be preferably the scope below the above 100 μ m of 10 μ m.This thickness, in aforementioned range, represents to be adapted to pass through the processing (cut processing, particularly pre-stress maintains) that stealthy cutting is carried out.The preferred thickness of the 2nd layer of Z is below the above 80 μ m of 15 μ m.
As the 2nd layer of Z, at the thickness ratio of stealth cutting in film base material, from the viewpoint of the steady production as film base material, consider, be preferably the more than 10% of film base material integral thickness.From realizing the viewpoint of cutting property and expansionary balance, consider, the thickness ratio of the 2nd layer of Z is preferably the more than 20% of film base material integral thickness.
In the present invention, in the modulus of flexural rigidity of the resin C containing in the modulus of flexural rigidity of the Resin A containing X from the aforementioned layer contacting with adhesive layer respectively or aforementioned layers Z, deduct the resin B containing in layer Y modulus of flexural rigidity difference absolute value (| the modulus of flexural rigidity of the modulus of flexural rigidity-resin B of Resin A | or | the modulus of flexural rigidity of modulus of flexural rigidity-resin B of resin C |) a larger side's value, be preferably the scope below the above 345MPa of 50MPa.It should be noted that, the symbol of " || " represents absolute value.
If aforementioned value is more than 50MPa,, when the intensity of X is low, cutting property of wafer is more excellent, and when the intensity of X is high, dilatancy is more excellent.In addition,, if aforementioned value is below 345MPa, it is favourable in degree that can be good with cutting property, relaxing in intensity (modulus of flexural rigidity) this point of layer X contacting with adhesive layer.
Wherein, based on aforementioned same reason, the larger side's of absolute value of aforementioned difference value, the more preferably scope below the above 330MPa of 50MPa.
From the viewpoint of utilizing the cutting property of wafer of stealthy cutting more excellent, for stealthy cutting film base material of the present invention, preferred mode is that the thickness of the layer X that contact with adhesive layer is that 15 μ m are above below 80 μ m, the thickness of aforementioned layers Y is below the above 80 μ m of 15 μ m, and the thickness of aforementioned layers Z is below the above 80 μ m of 15 μ m.
Stealthy cutting of the present invention is to contain the layer X contacting with adhesive layer with the optimal way of film base material, the 1st layer of Y and the 2nd layer of stepped construction that Z stacks gradually, or the layer X contacting with adhesive layer, the 2nd layer of Z and the 1st layer of stepped construction that Y stacks gradually, the aforementioned layer X contacting with adhesive layer contains Resin A, the modulus of flexural rigidity of aforementioned resin A is below the above 350MPa of 180MPa, aforementioned the 1st layer of Y contains resin B, the modulus of flexural rigidity of aforementioned resin B is below the above 270MPa of 10MPa, aforementioned the 2nd layer of Z contains resin C, the modulus of flexural rigidity of aforementioned resin C is below the above 330MPa of 70MPa.
And then, stealthy cutting of the present invention is to contain layer X, the 1st layer of Y and the 2nd layer of stepped construction that Z stacks gradually contacting with adhesive layer with the optimal way of film base material, Zn ionomer or the Mg ionomer of the Zn ionomer that the Resin A containing in the aforementioned layer X contacting with adhesive layer is ethylene acrylic acid co polymer or Mg ionomer, ethylene methacrylic acid copolymer, the resin B containing in aforementioned the 1st layer of Y is low density polyethylene (LDPE) (low-density polyethylene; LDPE), straight chain shape low density polyethylene (LDPE) (linear low-density polyethylene; LLDPE), EVAc, ethene (methyl) acrylic acid 2 membered copolymers and Zn ionomer thereof, ethene (methyl) acrylic acid (methyl) acrylic acid (preferably carbon number is 1～4) Arrcostab 3 membered copolymers and Zn ionomer thereof, the resin C containing in aforementioned the 2nd layer of Z is ethene (methyl) acrylic acid 2 membered copolymers and Zn ionomer and Mg ionomer and ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer thereof.
As forming the layer X contacting with adhesive layer of film base material and bed thickness (μ m) ratio (X/Z/Y (or X/Y/Z)) of the 2nd layer of Z (or layer Y) and the 1st layer of Y (or layer Z) for stealth cutting, preferably the ratio of layer X is more than 10% below 80%, the ratio of layer Y is more than 10% below 70%, and the ratio of layer Z is more than 10% below 80%.Select the ratio of each bed thickness so that add up to 100%.Ratio [%] can be obtained by " thickness/gross thickness * 100 of each layer ".
～physical property～
From the viewpoint of improving cutting property, in order not hinder seeing through of laser, stealthy cutting of the present invention is more little more preferred with the mist degree of film base material.Particularly, mist degree is below 10.Mist degree is below 10, represents to have to be adapted to pass through the transparency of utilizing the processing that the stealth cutting of laser carries out.Wherein, mist degree is preferably below 9.0, more preferably below 8.0.
Mist degree is the value of using haze meter and measuring according to JIS K7136.
In addition, use the irradiation position precision aspect of camera to consider from improve stealthy cutting action, stealthy cutting of the present invention is more than 90% with the total light transmittance of film base material.Total light transmittance is more than 90%, represents to possess to be adapted to pass through the photopermeability that utilizes the processing that the stealth cutting of laser carries out.Total light transmittance is to use HM-150 type (color institute system in (strain) village), under 23 ℃, the atmosphere of 50% relative humidity, and the value of measuring according to JIS K7361.
Stealthy cutting of the present invention is the scope below the above 19MPa of 9MPa with the pre-stress of film base material, and preferred lower limit is for surpassing the scope of 10MPa.And then pre-stress more preferably 10MPa is above and be less than 17MPa.If pre-stress is less than 9MPa, the external stress in the time of cannot keeping minute pellet, cannot carry out cutting apart of wafer well.In addition,, if pre-stress surpasses 19MPa, spreading rate variation, the cutting property such as cannot evenly cut poor.
Pre-stress in the present invention, according to JIS K7127, MD direction and TD direction for stealth cutting with film base material, at test speed: 500mm/s, test film: between wide 10mm * long 200mm, chuck: under the condition of 100mm, the stress of measuring while extending 6% as test film obtains, and on average evaluating by the measured value of MD and TD.
Stealthy cutting of the present invention is more than 102% below 120% with the spreading rate of film base material, is preferably more than 104% below 120%, more preferably more than 104% below 110%.If spreading rate is less than the lower limit (102%) of aforementioned range, the external stress in the time of cannot keeping minute pellet, cannot carry out cutting of wafer well.Spreading rate surpasses the stealth cutting film base material of aforementioned range higher limit (120%), and stress is actual cannot existence in the scope below the above 19MPa of 9MPa in the early stage.
Spreading rate is the value of measuring by the following method.
That is, from the stealth cutting of making, with film base material, cut out vertical (MD) more than direction 300mm * horizontal stroke (TD) square test film more than direction 300mm.Make writing appliances such as using oil pen and on this test film, draw the square foursquare determination object 1 of 141mm, this determination object 1 is arranged on to the chip expansion device (the chip expansion device TEX-218G GR-8 of Technovision company system) that 8 inches of wafers use upper, makes square center superposition drawn in platform center and determination object 1.Then, platform is promoted to 15mm, the stealthy cutting of expansion, with after film standing 60 seconds, is measured each edge lengths of square (length of side) of determination object 1.For 4 length of sides of gained, calculate respectively percentage elongation (%; The length of side * 100 before the length of side/expansion after=expansion), obtain its mean value.
As the thickness of base material 11, it is the scope below the above 200 μ m of 50 μ m.Base material gross thickness, in aforementioned range, is expressed as the base material thickness that is suitable for stealthy cutting.In addition, from dilatancy and transparent viewpoint, consider, the thickness of base material is preferably below 150 μ m, in addition, considers, more than being preferably 80 μ m from the viewpoint of cutting property.
In addition, base material 11 preferably can not make laser L scattering, and surface and the back side are preferably level and smooth.The surface of base material 11 and the surface roughness Ra at the back side (arithmetic mean roughness) are preferably below 1.0 μ m.
Surface roughness (Ra) is to use the non-contact type surface configuration roughness integrator of light interference type, the value of measuring according to JIS B0601-2001.
From the viewpoint of antistatic property, consider, stealthy cutting of the present invention is preferably 1.0 * 10 by the surface resistivity of film base material 9Ω/sq above 1.0 * 10 12below Ω/sq.The adjusting of surface resistivity is added the method for the antistatic agent that contains polyether ester composition or carries out with adding in advance the known methods such as method of ionic conductivity compound in film base material in stealth cutting such as adopting as open in No. 4606029th, Japan Patent.
Surface resistivity is to use Hiresta-UP (Mitsubishi Chemical's (strain) system), under the condition of 23 ℃ of test temperatures, relative humidity 50%, by applying voltage, is set as the value that 500V measures.
Stealthy cutting of the present invention preferably contains the antistatic agent containing polyether ester composition with film base material.The fusing point of antistatic agent be preferably 155 ℃ above below 185 ℃, more preferably 160 ℃ above below 185 ℃, be particularly preferably 160 ℃ above below 180 ℃.By containing this antistatic agent, can improve antistatic behaviour, and can not damage the transparency of film base material.By making the fusing point of antistatic agent, be aforementioned range, can maintain the high transparency of the ionomer resin (particularly zinc ionomer or magnesium ion cross-linked polymer) while containing antistatic agent.
Fusing point is by differential scanning calorimetry (Differential scanning calorimetry; DSC), measure the heat of measuring between sample and primary standard substance poor, and obtained by the spike shape occurring.
As aforementioned antistatic agent, can enumerate low molecule-type antistatic agent, Polymer Antistatic Agent, preferred Polymer Antistatic Agent, as Polymer Antistatic Agent, can be set forth in the ethylenic copolymer in molecule with sulfonate, alkylsulfonate, alkylbenzenesulfonate, betaine etc.In addition can also enumerate, the inorganic proton hydrochlorate etc. of polyethers, polyamide elastomer, polyester elastomer, polyetheramides or polyether ester amides.As inorganic proton hydrochlorate, can enumerate alkali metal salt, alkali earth metal salt, zinc salt or ammonium salt.
As polyether ester amides, can enumerate by polyamide-block and polyether polyols block and form, and these blocks carry out the block copolymer of ester linkage.
Polyamide-block in polyether ester amides, for example, by dicarboxylic acids (example: oxalic acid, butanedioic acid, adipic acid, decanedioic acid, dodecanedioic acid, terephthalic acid (TPA), M-phthalic acid, 1, 4-cyclohexane cyclohexanedimethanodibasic etc.) with diamines (example: ethylenediamine, tetra-methylenedimine, five methylene diamine, hexamethylene diamine, decamethylene diamine, 2, 2, 4-trimethylhexamethylenediamine, 2, 4, 4-trimethylhexamethylenediamine, 1, 3-bis-(amino methyl) cyclohexane, 1, 4-bis-(amino methyl) cyclohexane, methylene two (4-aminocyclohexane), m-xylene diamine, p dimethylamine etc.) polycondensation, the ring-opening polymerisation of the lactams such as epsilon-caprolactams, omega-lauric lactam, the polycondensation of the amino carboxylic acids such as 6-aminocaprolc acid, 9 aminononanoic acid, the amino hendecanoic acid of 11-, 12 amino dodecanoic acid, or by copolymerization of aforementioned lactams, dicarboxylic acids and diamines etc. and obtain.This polyamide fragment is Nylon4, Nylon6, Nylon46, Nylon66, Nylon610, Nylon612, Nylon6T, Nylon11, Nylon12, Nylon6/66, Nylon6/12, Nylon6/610, Nylon66/12, Nylon6/66/610 etc., is particularly preferably Nylon11, Nylon12 etc.The molecular weight of polyamide-block is for example 400～5000 left and right.
In addition, as polyether block, the polyether polyols such as the polyoxyethylene glycol of can giving an example, polyoxypropylene diols, polyoxy tetramethylene glycol, polyoxyethylene polyoxypropylene glycol or their mixture etc.Their molecular weight is for example 400～6000 left and right, more preferably 600～5000 left and right.
As antistatic agent, can use the commercially available product of listing, as object lesson, can enumerate Irgastat P-16, Irgastat P-18, Irgastat P-20, the Irgastat P-22 etc. of BASF Japan company system, Sanyo changes into Pelestat230, Pelestat HC250, Pelestat300, Pelestat2450, the Pelectron PVH of industrial group's system, Entira MK400, the MK440 of polymeric chemical company of Mitsui Du Pont system, SD100 etc.
Aforementioned antistatic agent can be with ormal weight melting mixing in thermoplastic resin, or antistatic agent and thermoplastic resin are dry mixed, then they are carried out to melting mixing.
Aforementioned antistatic agent can be included in any one that forms layer X, the layer Y of film base material and layer Z, also can be included in all layers of a layer X, layer Y and layer Z.When containing ultra-violet absorber, can be undertaken by the mixing preceding methods such as method of ultra-violet absorber that add.
When containing aforementioned antistatic agent, the content as aforementioned antistatic agent in film base material, with respect to ionomer resin, is preferably and surpasses 10 quality % to 30 quality %, more preferably surpasses 10 quality % to 20 quality %.By making the content of antistatic agent surpass 10 quality %, the antistatic effect of film base material is excellent.By making the content of antistatic agent, be below 30 quality %, can keep the transparency of film base material.By making the content of antistatic agent, be above-mentioned scope, the surface resistivity of film base material suitably can be adjusted to 1.0 * 10 9Ω/sq above 1.0 * 10 12scope below Ω/sq.
In stealthy cutting of the present invention, with in film base material, except mentioned component, can also further coordinate various additives arbitrarily.As an example of this additive, can enumerate antioxidant, heat stabilizer, light stabilizer, ultra-violet absorber, lubricant, anti-blocking agent, rust inhibitor, antiseptic, fire retardant, flame retardant, cross-linked material, crosslinking coagent etc.In addition, as required, can also with film base material, carry out electron beam irradiation to stealth cutting.
Manufacture method as stealth cutting with film base material, can adopt in the past the methods such as known T-shaped mould casting moulding, T-shaped model extrusion method, film blowing, extruding layer platen press, rolling-molding method.
(adhesive layer)
For adhesive layer 12, be not particularly limited, be preferably configured to ultra-violet solidified layer, for example, can use the formation such as acrylic adhesive of ultraviolet hardening.
Object lesson as the acrylic adhesive of ultraviolet hardening, (for example can enumerate at least (methyl) acrylic acid series polymeric compounds, aforementioned (methyl) acrylic monomer and the functional monomer of (methyl) acrylic monomers such as containing (methyl) acrylic acid, (methyl) acrylate, the polyacrylate such as butyl polyacrylate, polyacrylic acid 2-Octyl Nitrite) copolymer, urethane acrylate are the mixture of oligomer and these polymer, and the ultraviolet-curing adhesive of Photoepolymerizationinitiater initiater.
The mean molecule quantity of aforementioned polymer is preferably the HMW of 500,000～1,000,000 left and right.Mean molecule quantity refers to the weight average molecular weight of the polystyrene conversion of measuring by gel permeation chromatography (GPC).
As aforementioned (methyl) acrylate, for example, can enumerate trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate, 1,4-butanediol two (methyl) acrylate, 1,6-hexylene glycol two (methyl) acrylate, polyethylene glycol two (methyl) acrylate, oligoester (methyl) acrylate etc.
Aforementioned urethane acrylate is oligomer, it is the polymerizable ultraviolet compound at least with 2 carbon carbon unsaturated double-bonds, for example, can enumerate and (for example make to have the acrylate of hydroxyl or methacrylate, acrylic acid 2-hydroxy methacrylate, 2-hydroxyethyl methacrylate, acrylic acid 2-hydroxy propyl ester, methacrylic acid 2-hydroxy propyl ester, polyethylene glycol acrylate, polyethylene glycol methacrylate-styrene polymer etc.), with the polyol compound of polyester-type or polyether-type etc. and polyisocyanate compound (for example, 2, 4-toluene di-isocyanate(TDI), 2, 6-toluene di-isocyanate(TDI), 1, 3-XDI, 1, 4-XDI, diphenyl methane 4, 4-vulcabond etc.) carbamate prepolymer of terminal isocyanate group of reaction gained reacts and the material that obtains.
As aforementioned Photoepolymerizationinitiater initiater, for example, can enumerate benzoin iso-propylether, isobutyl group benzylic ether, benzophenone, Michler's keton, chloro thioxanthone, dodecyl thioxanthones, dimethyl thioxanthones, diethyl thioxanthone, benzyl dimethyl ketal, Alpha-hydroxy cyclohexyl-phenyl ketone, 2-hydroxymethyl phenyl-propane etc.Photoepolymerizationinitiater initiater may be used alone, or two or more kinds may be used in combination.By add Photoepolymerizationinitiater initiater in adhesive layer, can suppress curing reaction time or radiation exposure amount, be cured efficiently reaction.
In addition, adhesive layer is also same with aforementioned substrates, and preferably clear is high.
As the light penetration of the visible ray in adhesive layer, in the full wavelength region may of the 400nm～800nm of luminous ray, the light penetration in adhesive layer is preferably more than 90%.
In addition, when the light penetration that uses base material is the luminous ray of more than 90% wavelength, stealthy cutting is preferably more than 90% with the light penetration of film integral body, and then, in the light time of using the full wavelength region may of 400nm～800nm, stealthy cutting is preferably more than 90% with the light penetration of film integral body.
It should be noted that, light penetration is the value of using spectrophotometric determination.
More than the thickness of adhesive layer 12 is preferably 5 μ m, more preferably more than 10 μ m.
From the viewpoint of improving, cut rate, in order not hinder seeing through of laser, stealthy cutting of the present invention is more little more preferred with the mist degree of film.Particularly, mist degree is preferably below 10, more preferably below 9.0, more preferably below 8.0.The assay method of mist degree as previously mentioned.
In addition,, after film expansion, wish that albinism appears in all or part that can not find film.
Stealthy cutting of the present invention is preferably over 9MPa with the pre-stress of film, and more preferably below the above 19MPa of 10MPa, more preferably 10MPa above and be less than 17MPa.If external stress when pre-stress for surpassing the scope of 9MPa, can keep minute pellet, can carry out cutting of wafer well.In addition if pre-stress is below 19MPa, on aspect dilatancy, be favourable.The assay method of pre-stress is (according to JIS K7127) as previously mentioned.
Stealthy cutting of the present invention is preferably more than 102% below 120% with the spreading rate of film, more preferably more than 104% below 120%.If more than the lower limit that spreading rate is aforementioned range, the external stress in the time of can keeping minute pellet, can carry out cutting of wafer well.If below the higher limit that spreading rate is aforementioned range, stretched film equably, and suppress that expansion is uneven, the generation of film distortion.The assay method of spreading rate as previously mentioned.
[manufacture method of electronic unit]
For using stealthy cutting of the present invention to be elaborated by the manufacture method of the electronic unit of film.
The manufacture method of electronic unit of the present invention is to be configured to following operation is set: aforesaid stealthy cutting of the present invention is sticked to the operation (film adhesion operation) of chip back surface and from stealth cutting, by film side, to having adhered to stealthy cutting, uses the wafer illumination laser of film with film, by laser, wafer is carried out the operation (cutting action) of stealthy cutting across stealth cutting with film.The manufacture method of electronic unit of the present invention can also be configured to as required other operations are further set.
As shown in Figure 3A, stealth cutting is fixed on to the back side (with the face of the contrary side of element formation face) of wafer W with the adhesive layer 12 of film 1, and place stealthy cutting film 1, the end of its adhesive layer 12 is contacted with cutting bed 6, and be fixed on (film adhesion operation) on cutting bed by adhesive layer 12.
Then, from the base material 11 side irradiating lasers of cutting belt 1, across stealth cutting, with film 1, laser L is conducted to the inside of wafer W, thus, as shown in Figure 3 B, along the inside line of cut formation W1 of modification portion (modification area) of wafer W.Then, as shown in Figure 4, by draw stealthy cutting with the end of film 1 to the direction of arrow, make film expansion (cutting action).Thus, the aforementioned modification W1 of portion of take is starting point, along the W1 of modification portion, wafer W is divided into polylith.
Then, if stealth cutting is used to adhesive layer 12 irradiation ultraviolet radiations of film 1, adhesive layer 12 solidifies, and the bonding force of this layer declines.Thus, can with film 1, take off polylith wafer from stealth cutting, each chip (electronic unit), can obtain desirable electronic unit.
As laser, for example, can according to circumstances select to produce Nd:YAG laser, Nd:YVO laser, Nd:YLF laser, titanium sapphire laser, the CO of pulse laser 2the known laser such as laser, argon laser.
Although the manufacture method of electronic unit of the present invention is usingd silicon wafer as object, also can use compound semiconductor wafers such as chip glass, silicon carbide wafer, sapphire wafer, gallium phosphide crystal, gallium arsenide wafer etc.
Embodiment
Below, by embodiment, the present invention will be described, but the present invention is not limited to these embodiment.It should be noted that, acetate unit content refers to the ratio that contains from the construction unit of ethene, methacrylic acid unit content refers to the ratio that contains from the construction unit of methacrylic acid, and isobutyl acrylate unit content refers to the ratio that contains from the construction unit of isobutyl acrylate.
[A] embodiment 1～27 and comparative example 1～4
The composition of raw material and the assay method of the film of physical property and gained and the physical property of sheet material that in embodiment 1～27 shown below and comparative example 1～4, use are as described below.
-1. raw material-
(1) ionomer (IO-1)
Raw polymer: ethylene methacrylic acid copolymer (acetate unit content: 85 quality %, methacrylic acid unit content: 15 quality %)
Metal cation source: magnesium
Degree of neutralization: 35%
MFR (190 ℃, 2160g load): 5.9g/10 minute
(2) ionomer (IO-2)
Raw polymer: ethylene methacrylic acid copolymer (acetate unit content: 85 quality %, methacrylic acid unit content: 15 quality %)
Metal cation source: magnesium
Degree of neutralization: 54%
MFR (190 ℃, 2160g load): 0.7g/10 minute
(3) ionomer (IO-3)
Raw polymer: ethylene methacrylic acid isobutyl acrylate copolymer (acetate unit content: 80 quality %, methacrylic acid unit content: 10 quality %, isobutyl acrylate unit content: 10 quality %)
Metal cation source: zinc
Degree of neutralization: 70%
MFR (190 ℃, 2160g load): 1.0g/10 minute
(4) ionomer (IO-4)
Raw polymer: ethylene methacrylic acid copolymer (acetate unit content: 89 quality %, methacrylic acid unit content: 11 quality %)
Metal cation source: zinc
Degree of neutralization: 65%
MFR (190 ℃, 2160g load): 5.0g/10 minute
(5) ionomer (IO-5)
Raw polymer: ethylene methacrylic acid isobutyl acrylate copolymer (acetate unit content: 81 quality %, methacrylic acid unit content: 11.5 quality %, isobutyl acrylate unit content: 7.5 quality %)
Metal cation source: magnesium
Degree of neutralization: 14%
MFR (190 ℃, 2160g load): 5.9g/10 minute
(6) ionomer (IO-6)
Raw polymer: ethylene methacrylic acid isobutyl acrylate copolymer (acetate unit content: 82 quality %, methacrylic acid unit content: 13 quality %, isobutyl acrylate unit content: 5 quality %)
Metal cation source: magnesium
Degree of neutralization: 27%
MFR (190 ℃, 2160g load): 5.9g/10 minute
(7) ionomer (IO-7)
Raw polymer: ethylene methacrylic acid copolymer (acetate unit content: 85 quality %, methacrylic acid unit content: 15 quality %)
Metal cation source: zinc
Degree of neutralization: 59%
MFR (190 ℃, 2160g load): 0.9g/10 minute
(8) ethene (methyl) acrylic copolymer (EMAA)
Ethylene methacrylic acid copolymer (acetate unit content: 91 quality %, methacrylic acid unit content: 9 quality %)
MFR (190 ℃, 2160g load): 3.0g/10 minute
(9) polyether ester composition (B-1)
Trade name: Irgastat P-16 (fusing point (DSC mensuration): 158 ℃, BASF Japan (strain) system, polyether ester amides block copolymer)
(10) polyether ester composition (B-2)
Trade name: Irgastat P-18 (fusing point (DSC mensuration): 173 ℃, BASF Japan (strain) system, polyether ester amides block copolymer)
(11) polyether ester composition (B-3)
Trade name: Irgastat P-20 (fusing point (DSC mensuration): 195 ℃, BASF Japan (strain) system, polyether ester amides block copolymer)
-2. physical property measurement method-
Physical property for stealth cutting with film base material, is used the ionomeric membrane base material manufactured in embodiment described later and comparative example etc. to measure.Measurement result is shown in following table 1～table 2.
(1) pre-stress
Vertical (MD) direction and horizontal stroke (TD) direction for each stealthy cutting made from film base material, the stress while measuring under the following conditions elongation 6% according to JIS K7127.Value shown in following table 1～table 2 is the mean value of MD and TD.
< condition >
Test speed: 500mm/ second
Test film: wide 10mm * long 200mm
Between chuck: 100mm
(2) mist degree
For each stealthy cutting film base material of making, use the HM-150 type of color institute system in (strain) village, under the atmosphere of 23 ℃ of temperature, relative humidity 50%, according to JISK7136, measure.
(3) dilatancy (spreading rate)
From each stealthy cutting of making, with film base material, cut out vertical (the MD direction of film) more than 300mm * horizontal stroke (the TD direction of film) quadrangular membrane substrate sheets more than 300mm, on the film base material sheet that uses the writing appliances such as oil pen to cut at this, draw the square square of 141mm (following, to be called determination object 1).Determination object 1 is arranged on the chip expansion device (the chip expansion device TEX-218G GR-8 of Technovision company system) that 8 inches of wafers use.At this moment, in the mode of square center superposition drawn in the platform center of chip expansion device and determination object 1, install.Then, platform is promoted to 15mm, expansion is stealthy cuts with after film, and standing 60 seconds, each edge lengths of square (length of side) of mensuration determination object 1.For 4 length of sides of gained, calculate respectively percentage elongation (%; The length of side * 100 before the length of side/expansion after=expansion), and using its mean value as spreading rate [%].
(4) cutting property
According to following metewand, evaluate each stealthy performance of cutting of cutting with film base material of making.It should be noted that, what is called is cut rate [%], is the value of being obtained by " (reality can be cut quantity)/(total Segmentation Number) * 100 ".
< metewand >
A: the rate of cutting is more than 80% below 100%.
B: the rate of cutting is more than 60% and is less than 80%.
C: the rate of cutting is less than 60%.
D: fail easily to cut.
(5) surface resistivity
Use the Hiresta-UP of Mitsubishi Chemical's (strain) system, under 23 ℃, the atmosphere of 50% relative humidity, will apply voltage and be set as 500V, measure.
(6) total light transmittance
For each stealthy cutting film base material of making, the HM-150 type of color institute system in use (strain) village, under 23 ℃, the atmosphere of 50% relative humidity, measures according to JIS K7361.
First, as the example when the antistatic agent not, embodiment 1～4 is contrasted to illustration with comparative example.
[embodiment 1]
Use single screw extrusion machine inflation forming machine, in the resin input port of this forming machine, drop into aforementioned ionomer (IO-1), mould temperature is set as to 190 ℃, has made the thick ionomeric membrane base material (stealthy cutting film base material) of 80 μ m.The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate and total light transmittance.The results are shown in following table 1.
[embodiment 2]
Except in embodiment 1, ionomer (IO-1) is replaced with to ionomer (IO-6), and mould temperature is replaced with beyond 200 ℃, made similarly to Example 1 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate and total light transmittance.The results are shown in following table 1.
[embodiment 3]
Except in embodiment 1, ionomer (IO-1) is replaced with to ionomer (IO-2), and mould temperature is replaced with beyond 230 ℃, made similarly to Example 1 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate and total light transmittance.The results are shown in following table 1.
[embodiment 4]
Except in embodiment 1, ionomer (IO-1) is replaced with to ionomer (IO-4), and mould temperature is replaced with beyond 180 ℃, made similarly to Example 1 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate and total light transmittance.The results are shown in following table 1.
[comparative example 1]
Except in embodiment 1, ionomer (IO-1) is replaced with to ionomer (IO-3), and mould temperature is replaced with beyond 210 ℃, made similarly to Example 1 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate and total light transmittance.The results are shown in following table 1.
[comparative example 2]
Except in embodiment 1, ionomer (IO-1) is replaced with to ionomer (IO-5), and mould temperature is replaced with beyond 180 ℃, made similarly to Example 1 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate and total light transmittance.The results are shown in following table 1.
[comparative example 3]
Except in embodiment 1, ionomer (IO-1) is replaced with to ionomer (IO-7), and mould temperature is replaced with to 210 ℃, thickness is replaced with beyond 220 μ m, made similarly to Example 1 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate and total light transmittance.The results are shown in following table 1.
[comparative example 4]
Except in embodiment 1, ionomer (IO-1) is replaced with to EMAA, and mould temperature is replaced with beyond 180 ℃, made similarly to Example 1 film base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate and total light transmittance.The results are shown in following table 1.
Example while then, containing antistatic agent is shown in embodiment 5～embodiment 9.
[embodiment 5]
In embodiment 1, the ionomer (IO-1) using is replaced with to ionomer (IO-1) 85 mass parts, Irgastat P-16 (polyether ester composition (B-1)) 7.5 mass parts and Irgastat P-18 (polyether ester composition (B-2)) 7.5 mass parts, these compositions are dry mixed.The raw material that this is dry mixed is put into possesses full thread type screw rod the resin input port of single screw extrusion machine in after, melting mixing, carries out granulating.Use the particle of gained, made similarly to Example 1 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate, surface resistivity and total light transmittance.The results are shown in following table 2.
[embodiment 6]
In embodiment 1, the ionomer (IO-1) using is replaced with to ionomer (IO-1) 85 mass parts and Irgastat P-18 (polyether ester composition (B-2)) 15 mass parts, these compositions are dry mixed.The raw material that this is dry mixed is put into possesses full thread type screw rod the resin input port of single screw extrusion machine in after, melting mixing, carries out granulating.Use the particle of gained, made similarly to Example 1 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate, surface resistivity and total light transmittance.The results are shown in following table 2.
[embodiment 7]
Except in embodiment 5, ionomer (IO-1) is replaced with to ionomer (IO-2) in addition, and embodiment 5 has similarly made ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate, surface resistivity and total light transmittance.The results are shown in following table 2.
[embodiment 8]
Except in embodiment 6, ionomer (IO-1) is replaced with to ionomer (IO-2) in addition, made similarly to Example 6 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate, surface resistivity and total light transmittance.The results are shown in following table 2.
[embodiment 9]
Except in embodiment 6, ionomer (IO-1) is replaced with to ionomer (IO-2), and Irgastat P-18 (15 mass parts) is replaced with beyond Irgastat P-16 (polyether ester composition (B-1)) 15 mass parts, made similarly to Example 6 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate, surface resistivity and total light transmittance.The results are shown in following table 2.
[comparative example 5]
Except in embodiment 6, ionomer (IO-1) is replaced with to ionomer (IO-2), and Irgastat P-18 (15 mass parts) is replaced with beyond IrgastatP-20 (polyether ester composition (B-3)) 15 mass parts, made similarly to Example 6 ionomeric membrane base material (stealthy cutting film base material).The film base material of making for this, has carried out the mensuration of pre-stress, mist degree, spreading rate, surface resistivity and total light transmittance.The results are shown in following table 2.
[table 1]
[not containing antistatic agent]
[table 2]
[containing antistatic agent]
[embodiment 10～18]
As base material, the ionomeric membrane base material that preparation is made in embodiment 1～9, as adhesive layer, form the jointing material of use, prepare ultraviolet hardening acrylic adhesive (Beamset575 of Huang Chuan chemical industrial company system (urethane acrylate is oligomer)).
Use above-mentioned base material and adhesive, the material bar that ultraviolet hardening acrylic acid series jointing material is dissolved in to ethyl acetate and obtains is coated on base material, make as shown in Figure 1 by ionomeric membrane base material 11/ dry thickness, be the formed 9 kinds of stealthy cutting films of stepped construction of the adhesive layer 12 of 20 μ m.
[embodiment 19～27]
The stealth cutting film that use is made in embodiment 10～18, as shown in Figure 3A, each stealthy cutting is fixed on to the back side of wafer W with the adhesive layer 12 of film 1, then the end of this adhesive layer 12 is contacted with cutting bed 6, stealth cutting is fixed on cutting bed with film 1.Then, from the base material 11 side irradiating lasers of cutting belt 1, and conduct with film 1 across stealth cutting, thus, as shown in Figure 3 B, along the line of cut of wafer W inside, form the W1 of modification portion.Then, as shown in Figure 4, by draw stealthy cutting with the end of film 1 to the direction of arrow, make film expansion, the W1 of modification portion of take is starting point, is divided into polylith.Then, to adhesive layer 12 irradiation ultraviolet radiations, take out a plurality of chips, thereby can obtain desirable electronic unit.
[B] embodiment 28～89 and comparative example 6～10
The composition of raw material and the assay method of the film of physical property and gained and the physical property of sheet material that in embodiment 28～49 shown below and comparative example 6～10, use are as described below.
-1. raw material-
(1) ionomer (IO-11)
Raw polymer: ethylene methacrylic acid copolymer (acetate unit content: 85 quality %, methacrylic acid unit content: 15 quality %)
Metal cation source: magnesium
Degree of neutralization: 35%
MFR (190 ℃, 2160g load): 5.9g/10 minute
Modulus of flexural rigidity (according to JIS K7106): 330MPa
(2) ionomer (IO-12)
Raw polymer: ethylene methacrylic acid copolymer (acetate unit content: 85 quality %, methacrylic acid unit content: 15 quality %)
Metal cation source: magnesium
Degree of neutralization: 54%
MFR (190 ℃, 2160g load): 0.7g/10 minute
Modulus of flexural rigidity (according to JIS K7106): 320MPa
(3) ionomer (IO-13)
Raw polymer: ethylene methacrylic acid isobutyl acrylate copolymer (acetate unit content: 80 quality %, methacrylic acid unit content: 10 quality %, isobutyl acrylate unit content: 10 quality %)
Metal cation source: zinc
Degree of neutralization: 70%
MFR (190 ℃, 2160g load): 1.0g/10 minute
Modulus of flexural rigidity (according to JIS K7106): 90MPa
(4) ionomer (IO-14)
Raw polymer: ethylene methacrylic acid copolymer (acetate unit content: 89 quality %, methacrylic acid unit content: 11 quality %)
Metal cation source: zinc
Degree of neutralization: 65%
MFR (190 ℃, 2160g load): 5.0g/10 minute
Modulus of flexural rigidity (according to JIS K7106): 260MPa
(5) ionomer (IO-15)
Raw polymer: ethylene methacrylic acid copolymer (acetate unit content: 85 quality %, methacrylic acid unit content: 15 quality %)
Metal cation source: zinc
Degree of neutralization: 23%
MFR (190 ℃, 2160g load): 5.0g/10 minute
Modulus of flexural rigidity (according to JIS K7106): 200MPa
(6) ionomer (IO-16)
Raw polymer: ethylene methacrylic acid copolymer (acetate unit content: 85 quality %, methacrylic acid unit content: 15 quality %)
Metal cation source: zinc
Degree of neutralization: 59%
MFR (190 ℃, 2160g load): 0.9g/10 minute
Modulus of flexural rigidity (according to JIS K7106): 310MPa
(7) ethene (methyl) acrylic copolymer (EMAA)
Ethylene methacrylic acid copolymer (acetate unit content: 91 quality %, methacrylic acid unit content: 9 quality %)
MFR (190 ℃, 2160g load): 3.0g/10 minute
Modulus of flexural rigidity (according to JIS K7106): 140MPa
(8) EVAc (EVA)
EVAc (acetate unit content: 81 quality %, vinyl acetate unit content: 19 quality %)
MFR (190 ℃, 2160g load): 2.5g/10 minute
Modulus of flexural rigidity (according to JIS K7106): 40MPa
(9) polyolefin (C1)
Wire low density polyethylene (LDPE) (LLDPE:(strain) Prime Polymer system, Evolue SP2320, density: 919kg/m 3, MFR:1.9g/10 minute)
Modulus of flexural rigidity (according to JIS K7106): 240MPa
(10) polyolefin (C2)
Low density polyethylene (LDPE) (LDPE: density: 920kg/m 3, MFR:1.6g/10 minute)
Modulus of flexural rigidity (according to JIS K7106): 140MPa
(11) polyolefin (C3)
Random polypropylene (r-PP:(strain) Prime Polymer system, Prime Polypro F219DA, density: 910kg/m 3, MFR:8.0g/10 minute)
Modulus of flexural rigidity (according to JIS K7106): 960MPa
(12) polyolefin (C4)
HOPP (homopolymerization-PP:(strain) Prime Polymer system, Prime Polypro F113DA, density: 910kg/m 3, MFR:3.0g/10 minute)
Modulus of flexural rigidity (according to JIS K7106): 1290MPa
(13) polyether ester composition (B-1)
Trade name: Irgastat P-16, BASF Japan (strain) system
(14) polyether ester composition (B-2)
Trade name: Irgastat P-18, BASF Japan (strain) system
(15) polyether ester composition (B-4)
Trade name: Pelestat230, Sanyo changes into industry (strain) system (fusing point (DSC mensuration): 163 ℃)
-2. physical property measurement method-
Physical property for stealth cutting with film base material, is used the ionomeric membrane base material made in embodiment described later and comparative example etc. to measure.That measures and evaluate the results are shown in following table 3～table 5.
(1) pre-stress
Vertical (MD) direction for each stealthy cutting made from film base material, has measured the stress while extending 6% under the following conditions according to JIS K7127.
< condition >
Test speed: 500mm/sec
Test film: wide 10mm * long 200mm
Between chuck: 100mm
(2) cutting property of mist degree
For each stealthy cutting film base material of making, use and same method when above-mentioned [A] is middle, measure and evaluate.
(3) total light transmittance
For each stealthy cutting film base material of making, the HM-150 type of color institute system in use (strain) village, under 23 ℃, the atmosphere of 50% relative humidity, measures according to JIS K7361.
(4) dilatancy (spreading rate)
From each stealthy cutting of making, with film base material, cut out vertical (the MD direction of film) more than 300mm * horizontal stroke (the TD direction of film) quadrangular membrane substrate sheets more than 300mm, on the film base material sheet that uses the writing appliances such as oil pen to cut at this, draw the square square of 141mm (following, to be called determination object 2).Use the method same with above-mentioned [A], be determined at foursquare each edge lengths (length of side) drawn in determination object 2, for 4 length of sides of gained, calculate respectively percentage elongation (%; The length of side * 100 before the length of side/expansion after=expansion), obtain its mean value, using it as spreading rate [%].In addition, by Visual Confirmation expansion after film on produce albinism (having) or do not produce albinism (nothing).
(5) modulus of flexural rigidity (Olsen formula)
Use is set as the pressure forming machine of 190 ℃ raw material is carried out to extrusion forming, makes the compacting sheet material that 250mm * 250mm, 2mm are thick.For the thick sheet material of the 2mm making, according to JIS K7106, measure modulus of flexural rigidity.
[embodiment 28]
Use screw diameter is 3 kinds of 3 layers of inflation forming machines, use IO-12 (Mg) as the layer X-shaped one-tenth resin contacting with adhesive layer, use IO-13 (Zn) as layer Y shape one-tenth resin, use IO-12 (Mg) as the Z-shaped one-tenth resin of layer, in mould temperature: under the condition of 220 ℃, (gross thickness is 80 μ m to make 3 tunics of the stepped construction with the layer X/ layer Y/ layer Z contacting with adhesive layer; Stealthy cutting film base material).Layer X, the layer Y contacting with adhesive layer in this 3 tunic and the bed thickness of layer Z, be respectively 25 μ m, 30 μ m and 25 μ m.Then,, for 3 tunics of making, carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.The results are shown in following table 3.
[embodiment 29]
By screw diameter, be single screw extrusion machine ionomer (IO-11 (Mg)) 85 mass parts, Irgastat P-16 (polyether ester composition (B-1)) 7.5 mass parts and Irgastat P-18 (polyether ester composition (B-2)) 7.5 mass parts are carried out to melting mixing, for the preparation of forming layer X contact with adhesive layer and the ionomer composition of layer Z.Then, except in embodiment 1, use this ionomer composition as the layer X-shaped one-tenth resin contacting with adhesive layer, use IO-14 (Zn) as layer Y shape one-tenth resin, and mould temperature is replaced with beyond 210 ℃ by 220 ℃, made similarly to Example 13 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.And, measured surface resistivity, result surface resistivity is 1.7 * 10 14Ω/sq.
[embodiment 30]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-15 (Zn) with resin, the Z-shaped one-tenth of layer is replaced with to IO-15 (Zn) with resin, and mould temperature is replaced with beyond 200 ℃ by 220 ℃, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 31]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-14 (Zn) with resin, the Z-shaped one-tenth of layer is replaced with to IO-14 (Zn) with resin, and mould temperature is replaced with beyond 200 ℃ by 220 ℃, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 32]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C1 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, mould temperature is replaced with to 210 ℃ by 220 ℃, and layer X (A), the layer Y of 3 tunics and the bed thickness of layer Z are respectively beyond 28 μ m, 21 μ m and 30 μ m, have made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 33]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C1 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, and mould temperature is replaced with beyond 210 ℃ by 220 ℃, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 34]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C1 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, mould temperature is replaced with to 210 ℃ by 220 ℃, and layer X, the layer Y that makes to contact with adhesive layer in 3 tunics and the bed thickness of layer Z are respectively beyond 20 μ m, 40 μ m and 20 μ m, have made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 35]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with EMAA with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, and mould temperature is replaced with beyond 200 ℃ by 220 ℃, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 36]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, and mould temperature is replaced with beyond 210 ℃ by 220 ℃, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 37]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with EVA with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, and mould temperature is replaced with beyond 210 ℃ by 220 ℃, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 38]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C2 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, mould temperature is replaced with to 210 ℃ by 220 ℃, and the bed thickness of layer X, the layer Y of 3 tunics and layer Z is changed into respectively to 28 μ m, 22 μ m and the 30 μ m (gross thickness of 3 tunics: 80 μ m) in addition, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 39]
Use screw diameter is 3 kinds of 3 layers of cast membrane forming machines, use IO-16 (Zn) as the layer X-shaped one-tenth resin contacting with adhesive layer, use EMAA as layer Y shape one-tenth resin, use IO-16 (Zn) as the Z-shaped one-tenth resin of layer, in mould temperature: under the condition of 210 ℃, (gross thickness is 77 μ m to make 3 tunics of the stepped construction with layer X/ layer Y/ layer Z contact with adhesive layer; Stealthy cutting film base material).Layer X, the layer Y contacting with adhesive layer in these 3 tunics of making and the bed thickness of layer Z, be respectively 29 μ m, 20 μ m and 28 μ m.Then,, for 3 tunics of making, carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 40]
Except in embodiment 39, layer Y shape become with resin to replace with beyond C1, similarly made 3 tunics with embodiment 39.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.
[embodiment 41]
By screw diameter, be double screw extruder ionomer (IO-16 (Zn)) 85 mass parts and Pelestat230 (B-4) 15 mass parts are carried out to melting mixing, for the preparation of forming layer X contact with adhesive layer and the ionomer composition of layer Z.Then, except in embodiment 28, use this ionomer composition as the layer X-shaped one-tenth resin contacting with adhesive layer, use C2 as layer Y shape one-tenth resin, use this ionomer composition as the Z-shaped one-tenth resin of layer, and mould temperature is replaced with beyond 210 ℃ by 220 ℃, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 3.And measured surface resistivity.Surface resistivity is 1.3 * 10 10Ω/sq.
[embodiment 42]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C1 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, and mould temperature is replaced with beyond 210 ℃ by 220 ℃, under condition similarly to Example 28, made and there are layer 3 tunic of the stepped construction of X/ layer Z/ layer Y.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 4.
[embodiment 43]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C2 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, mould temperature is replaced with to 210 ℃ by 220 ℃, and make layer X, the layer Y of 3 tunics and the bed thickness of layer Z be respectively 30 μ m, 20 μ m and the 30 μ m (gross thickness of 3 tunics: 80 μ m) in addition, made similarly to Example 28 and there are layer 3 tunic of the stepped construction of X/ layer Z/ layer Y.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 4.
[embodiment 44]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C2 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, mould temperature is replaced with to 210 ℃ by 220 ℃, and make layer X, the layer Y of 3 tunics and the bed thickness of layer Z be respectively 20 μ m, 30 μ m and the 30 μ m (gross thickness of 3 tunics: 80 μ m) in addition, made similarly to Example 28 and there are layer 3 tunic of the stepped construction of X/ layer Z/ layer Y.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 4.
[embodiment 45]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C2 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, mould temperature is replaced with to 210 ℃ by 220 ℃, and make layer X, the layer Y of 3 tunics and the bed thickness of layer Z be respectively 20 μ m, 40 μ m and the 20 μ m (gross thickness of 3 tunics: 80 μ m) in addition, made similarly to Example 28 and there are layer 3 tunic of the stepped construction of X/ layer Z/ layer Y.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 4.
[embodiment 46]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C2 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, mould temperature is replaced with to 210 ℃ by 220 ℃, and make layer X, the layer Y of 3 tunics and the bed thickness of layer Z be respectively 15 μ m, 50 μ m and the 15 μ m (gross thickness of 3 tunics: 80 μ m) in addition, made similarly to Example 28 and there are layer 3 tunic of the stepped construction of X/ layer Z/ layer Y.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 4.
[embodiment 47]
By screw diameter, be double screw extruder ionomer (IO-16 (Zn)) 85 mass parts and Pelestat230 (B-4) 15 mass parts are carried out to melting mixing, for the preparation of the ionomer composition that forms layer X contact with adhesive layer.And, by screw diameter, be double screw extruder ionomer (IO-13 (Zn)) 85 mass parts and Pelestat230 (B-4) 15 mass parts are carried out to melting mixing, for the preparation of the ionomer composition Z that forms layer Z.
Then, except in embodiment 28, use this ionomer composition as the layer X-shaped one-tenth resin contacting with adhesive layer, use C2 as layer Y shape one-tenth resin, use this ionomer composition Z as the Z-shaped one-tenth resin of layer, mould temperature is replaced with to 210 ℃ by 220 ℃, and make layer X, the layer Y of 3 tunics and the bed thickness of layer Z be respectively 45 μ m, 15 μ m and the 30 μ m (gross thickness of 3 tunics: 90 μ m) in addition, made similarly to Example 28 and there are layer 3 tunic of the stepped construction of X/ layer Z/ layer Y formation.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 4.And measured surface resistivity.Surface resistivity is 1.5 * 10 11Ω/sq.
[embodiment 48]
Except in embodiment 47, the bed thickness of 3 tunic middle level X, layer Y and layer Z is replaced with respectively to 35 μ m, 15 μ m and the 40 μ m (gross thickness of 3 tunics: 90 μ m) in addition, similarly made and had layer 3 tunic of the stepped construction of X/ layer Z/ layer Y formation with embodiment 47.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 4.And measured surface resistivity.Surface resistivity is 2.1 * 10 11Ω/sq.
[embodiment 49]
Except in embodiment 47, the bed thickness of 3 tunic middle level X, layer Y and layer Z is replaced with respectively to 40 μ m, 15 μ m and the 25 μ m (gross thickness of 3 tunics: 80 μ m) in addition, similarly made and had layer 3 tunic of the stepped construction of X/ layer Z/ layer Y formation with embodiment 47.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 4.And measured surface resistivity, result surface resistivity is 1.7 * 10 11Ω/sq.
[comparative example 6]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-13 (Zn) with resin, the Z-shaped one-tenth of layer is replaced with to IO-13 (Zn) with resin, and mould temperature is replaced with beyond 210 ℃ by 220 ℃, made similarly to Example 28 film.Herein, each layer all used IO-13 (Zn) to form, and the film that essence is made consists of simple layer.In addition,, to the film of making, carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 5.
[comparative example 7]
Except in embodiment 39, the layer X-shaped contacting with adhesive layer become to replace with C4 with resin, layer Y shape become to replace with C4 with resin, the Z-shaped one-tenth of layer is replaced with to C4 with resin, mould temperature is replaced with to 240 ℃ by 210 ℃, and to make gross thickness be, beyond 80 μ m, similarly to have made film with embodiment 39.Herein, each layer all used C4 to form, and the film that essence is made consists of simple layer.In addition,, to the film of making, carry out the mensuration of pre-stress and spreading rate.Their result is together shown in following table 5.
[comparative example 8]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C1 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, mould temperature is replaced with to 210 ℃ by 220 ℃, and make layer X, the layer Y of 3 tunics and the bed thickness of layer Z change into respectively 70 μ m, 90 μ m and the 70 μ m (gross thickness of 3 tunics: 230 μ m) in addition, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree and total light transmittance.Their result is together shown in following table 5.In addition, although measured spreading rate, chip expansion apparatus platform does not rise, and cannot measure (NG).
[comparative example 9]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with C2 with resin, layer Y shape become to replace with EVA with resin, the Z-shaped one-tenth of layer is replaced with to C2 with resin, and mould temperature is replaced with beyond 200 ℃ by 220 ℃, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree and total light transmittance.Their result is together shown in following table 5.
[comparative example 10]
Except in embodiment 28, the layer X-shaped contacting with adhesive layer become to replace with IO-16 (Zn) with resin, layer Y shape become to replace with C3 with resin, the Z-shaped one-tenth of layer is replaced with to IO-16 (Zn) with resin, and mould temperature is replaced with beyond 210 ℃ by 220 ℃, made similarly to Example 28 3 tunics.3 tunics of making for this, have carried out the mensuration of pre-stress, mist degree, total light transmittance and spreading rate.Their result is together shown in following table 5.
[embodiment 50～69]
As base material, the ionomeric membrane base material that preparation is made in embodiment 28～49, as adhesive layer, form the jointing material of use, prepare ultraviolet hardening acrylic adhesive (Beamset575 of Huang Chuan chemical industrial company system (urethane acrylate is oligomer)).
Use above-mentioned base material and adhesive, the material bar that ultraviolet hardening acrylic acid series jointing material is dissolved in to ethyl acetate and obtains is coated on base material, make as shown in Figure 2 by ionomeric membrane base material 11/ dry thickness, be the formed stealthy cutting film of stepped construction of the adhesive layer 12 of 20 μ m.
[embodiment 70～89]
The stealth cutting film that use is made in embodiment 50～69, as shown in Figure 3A, each stealthy cutting is fixed on to the back side of wafer W with the adhesive layer 12 of film 1, then the end of this adhesive layer 12 is contacted with cutting bed 6, stealth cutting is fixed on cutting bed with film 1.Then, from the base material 11 side irradiating lasers of cutting belt 1, and conduct with film 1 across stealth cutting, thus, as shown in Figure 3 B, along the line of cut of wafer W inside, form the W1 of modification portion.Then, as shown in Figure 4, by draw stealthy cutting with the end of film 1 to the direction of arrow, make film expansion, thereby take the W1 of modification portion is starting point, is divided into polylith.Then, to adhesive layer 12 irradiation ultraviolet radiations, take out a plurality of chips, thereby can obtain desirable electronic unit.
As shown in aforementioned table 3～table 5, in an embodiment, obtained being suitable for film base material and the cutting film of stealthy cutting, described film base material and the cutting that is suitable for stealthy cutting uses the transparency of film high, about mist degree and total light transmittance, obtained good result, and pre-stress is also good.
On the other hand, in comparative example 6 and comparative example 9, although can obtain haze value, light penetration to a certain degree, it is too small that pre-stress becomes, and the cutting property of result in stealth cutting is poor.On the contrary, in comparative example 7, it is too high that pre-stress becomes, and while expanding in stealth cutting, cannot obtain good spreading rate, in addition, in comparative example 10, although can complete expansion, after expansion, produced albinism.And, in comparative example 8, because gross thickness is blocked up, therefore cannot keep dilatancy, cutting property is poor.
Japanese publication 2011-284379,2012-053389 and the disclosed full content of 2012-122540 are introduced in this specification by reference.
All documents, patent application and the technical standard of recording in this specification be as with reference to being introduced in this specification, and each document, patent application and technical standard are identical with the situation degree of specifically and respectively record as the situation with reference to being introduced into.

Claims (15)

1. a stealthy cutting film base material, it can be as possessing the described base material of the stealth cutting of adhesive layer and base material with film, and thickness is the scope below the above 200 μ m of 50 μ m, pre-stress is the scope below the above 19MPa of 9MPa, spreading rate is more than 102% scope below 120%, haze value is below 10, and total light transmittance is more than 90%.
2. stealthy cutting film base material as claimed in claim 1, it contains and is selected from the magnesium ion cross-linked polymer of ethene (methyl) acrylic acid series copolymer and the zinc ionomer of ethene (methyl) acrylic acid series copolymer, and the copolymerization ratio of the construction unit from (methyl) alkyl acrylate in copolymer is lower than the ionomer resin of 7 quality %.
3. stealthy cutting film base material as claimed in claim 2, wherein, the described of at least one party of described magnesium ion cross-linked polymer and described zinc ionomer is over 10 quality % and below 30 quality % from the copolymerization ratio of (methyl) acrylic acid construction unit in copolymer.
4. stealthy cutting film base material as claimed in claim 2 or claim 3, wherein, the degree of neutralization of at least one of described magnesium ion cross-linked polymer and described zinc ionomer is over below 0% and 60%.
5. stealthy cutting film base material as claimed in claim 2 or claim 3, wherein, the degree of neutralization of at least one of described magnesium ion cross-linked polymer and described zinc ionomer is more than 10% below 40%.
6. stealthy cutting film base material as claimed in claim 1, layer X, the 2nd layer of Z and the 1st layer of stepped construction that Y stacks gradually that it has the layer X contacting with described adhesive layer, the 1st layer of Y and the 2nd layer of stepped construction that Z stacks gradually or contact with described adhesive layer, and the thickness of described layer X, described layer Y and described layer Z is more than 10 μ m scope below 100 μ m.
7. stealthy cutting film base material as claimed in claim 6, wherein, the described layer X contacting with adhesive layer contains Resin A, the modulus of flexural rigidity of described Resin A is the scope below the above 350MPa of 100MPa, described the 1st layer of Y contains resin B, and the modulus of flexural rigidity of described resin B is the scope below the above 350MPa of 5MPa, and described the 2nd layer of Z contains resin C, the modulus of flexural rigidity of described resin C is the scope below the above 350MPa of 50MPa
And the larger side's of absolute value the value of difference that deducts respectively the modulus of flexural rigidity of described resin B from the modulus of flexural rigidity of described Resin A or described resin C is the scope below the above 345MPa of 50MPa.
8. the stealth cutting film base material as described in claim 6 or 7, wherein, a described layer X who contacts with adhesive layer contains Resin A, and described Resin A is the ionomer of ethylene unsaturated carboxylic acid's 2 membered copolymers.
9. stealthy cutting film base material as claimed in claim 8, wherein, the content by the construction unit of unsaturated carboxylic acid derivative in described 2 membered copolymers is that 1 quality % is above below 35 quality %.
10. the stealth cutting film base material as described in any one in claim 6～9, wherein, described the 1st layer of Y contains resin B, and described resin B is at least a kind that is selected from low density polyethylene (LDPE), straight chain shape low density polyethylene (LDPE), EVAc, ethylene unsaturated carboxylic acid's 2 membered copolymers and ionomer thereof, ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer thereof and ethylene unsaturated carboxylic acid's ester 2 membered copolymers.
11. stealth cutting film base materials as described in any one in claim 6～10, wherein, described the 2nd layer of Z contains resin C, and described resin C is at least a kind that is selected from ethylene unsaturated carboxylic acid's 2 membered copolymers and ionomer and ethylene unsaturated carboxylic acid's esters of unsaturated carboxylic acids 3 membered copolymers and ionomer thereof.
12. stealth cutting film base materials as described in any one in claim 1～11, it contains fusing point is 155 ℃ of above 185 ℃ of following antistatic agents.
13. stealth cutting film base materials as described in any one in claim 1～12, its surface resistivity is 1.0 * 10 9Ω/sq above 1.0 * 10 12below Ω/sq.
14. 1 kinds of stealthy cutting films, it possesses the stealth cutting film base material described in any one in adhesive layer and claim 1～13.
The manufacture method of 15. 1 kinds of electronic units, it comprises and the stealth cutting described in claim 14 is sticked to the operation of chip back surface with film, and
From described stealthy cutting, by film side, to having adhered to described stealthy cutting, use the wafer illumination laser of film, and use film by the operation of wafer described in laser cutting across stealth cutting.
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