TWI823981B - Resin composition for dicing film base material, dicing film base material and dicing film - Google Patents

Resin composition for dicing film base material, dicing film base material and dicing film Download PDF

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TWI823981B
TWI823981B TW108128323A TW108128323A TWI823981B TW I823981 B TWI823981 B TW I823981B TW 108128323 A TW108128323 A TW 108128323A TW 108128323 A TW108128323 A TW 108128323A TW I823981 B TWI823981 B TW I823981B
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dicing film
resin
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ethylene
film base
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TW202018033A (en
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中野重則
佐久間雅巳
髙岡樹
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日商三井 陶氏聚合化學股份有限公司
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    • C08L23/02Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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Abstract

本發明提供一種用於製造兼具較高強度與較高熱收縮性之切割膜之切割膜基材用樹脂組成物。本發明提供一種切割膜基材用樹脂組成物、以及使用該樹脂組成物之切割膜用基材及切割膜,該切割膜基材用樹脂組成物含有:乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下、及乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份),且JIS K7206-1999所規定之菲卡軟化點未滿50℃。 The present invention provides a resin composition for a dicing film base material used for manufacturing a dicing film having both higher strength and higher thermal shrinkage. The present invention provides a resin composition for a dicing film base material, a dicing film base material and a dicing film using the resin composition. The resin composition for a dicing film base material contains: ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid. The ionic polymer (A) of the acid ester copolymer is not less than 30 parts by mass and not more than 90 parts by mass, and the vinyl copolymer (B) is not less than 10 parts by mass and not more than 70 parts by mass (wherein, component (A) and component (B) are ) is 100 parts by mass), and the Fica softening point specified in JIS K7206-1999 is less than 50°C.

Description

切割膜基材用樹脂組成物、切割膜基材及切割膜 Resin composition for dicing film base material, dicing film base material and dicing film

本發明係關於一種切割膜基材用樹脂組成物、以及使用其之切割膜基材及切割膜。 The present invention relates to a resin composition for a dicing film base material, a dicing film base material and a dicing film using the same.

於積體電路(IC,Integrated Circuit)等半導體裝置之製造過程中,一般而言,將形成有電路圖案之半導體晶圓薄膜化後,進行用於將半導體晶圓分割成晶片單元之切割步驟。於切割步驟中,將具有伸縮性之晶圓加工用膜(稱為切割膜或切割帶)貼合於半導體晶圓之背面後,藉由切割刀或雷射光等將半導體晶圓分割成晶片單元。然後,於下一擴張步驟(亦稱為延伸步驟)中,藉由使與切斷之晶圓對應之切割帶擴張,而小片化為晶片。 In the manufacturing process of semiconductor devices such as integrated circuits (ICs), generally, after thinning a semiconductor wafer on which a circuit pattern is formed, a dicing step is performed to divide the semiconductor wafer into chip units. In the dicing step, a stretchable wafer processing film (called a dicing film or dicing tape) is attached to the back of the semiconductor wafer, and then the semiconductor wafer is divided into chip units using a dicing knife or laser light. . Then, in the next expansion step (also called an extension step), the dicing tape corresponding to the cut wafer is expanded, and the pieces are reduced into wafers.

於延伸步驟中,例如藉由將設置於切割膜之下之擴張台頂起而使切割膜擴張(延伸)。此時,為了分割晶片,重要的是於擴張台之整個面上切割膜均勻地擴張。又,由於在擴張台之周緣部施加於切割膜之應力大於擴張台之中心部,故而擴張步驟後之切割膜中之與擴張台周緣部對應之部分產生鬆弛。此種鬆弛會使分割之晶片之間隔變得不均勻,進而可能成為後續步驟中之製品不良之原因。 In the extending step, the dicing film is expanded (stretched), for example, by lifting an expansion table disposed under the dicing film. At this time, in order to divide the wafer, it is important that the dicing film expands uniformly over the entire surface of the expansion table. In addition, since the stress exerted on the cutting film at the peripheral portion of the expansion table is greater than that at the center portion of the expansion table, the portion of the cutting film corresponding to the peripheral portion of the expansion table relaxes after the expansion step. Such relaxation may cause uneven spacing between divided wafers, which may cause product defects in subsequent steps.

作為消除切割膜之鬆弛之手段,已知有熱收縮步驟,即,藉由對膜之鬆弛部分吹送實際溫度約80~100℃之熱風進行加 熱而使之收縮,恢復成原先之狀態(例如,參照專利文獻1)。為了實施該步驟,切割膜需要於80℃左右之溫度下具有較高之熱收縮性。 As a means to eliminate the slack of the cut film, a heat shrinkage step is known, that is, by blowing hot air with an actual temperature of about 80 to 100° C. to the slack part of the film. It shrinks due to heat and returns to its original state (see, for example, Patent Document 1). In order to implement this step, the cutting film needs to have high heat shrinkability at a temperature of about 80°C.

又,近年來備受矚目之切割方法有隱形切割(註冊商標)法。於該方法中,藉由雷射光於晶圓之內部而非表面形成龜裂,於在低溫(約-15℃~0℃)下實施之下一擴張步驟中,利用切割膜之應力分割晶圓。藉此,可抑制切割步驟中之半導體製品之損耗,從而提高產率。作為此處所使用之切割膜,要求兼具能夠耐受晶圓之分割所需之應力的強度、及用以於熱收縮步驟中消除於晶圓分割時可能產生之鬆弛的熱收縮性。 In addition, the invisible cutting (registered trademark) method is a cutting method that has attracted much attention in recent years. In this method, laser light is used to form cracks inside the wafer instead of on the surface. In the next expansion step performed at low temperature (about -15°C~0°C), the stress of the dicing film is used to divide the wafer. . Thereby, the loss of the semiconductor product during the cutting step can be suppressed, thereby improving the yield. The dicing film used here is required to have both strength to withstand the stress required for dividing the wafer, and heat shrinkability to eliminate slack that may occur when the wafer is divided in the heat shrink step.

作為切割膜所使用之切割膜用基材,已知有:含有使具有羧基之化合物藉由陽離子交聯所得之離子聚合物、及含辛烯之共聚合體的切割膜基材(專利文獻2);具有包含JIS K7206所規定之菲卡軟化點為80℃以上之熱塑性樹脂之最下層、及包含JIS K7206所規定之菲卡軟化點為50℃以上且未滿80℃之熱塑性樹脂之其他層的切割膜基材(專利文獻3);及包含JIS K7206所規定之菲卡軟化點為50℃以上且未滿90℃之熱塑性樹脂的切割膜基材(專利文獻4)。 As a dicing film base material used for a dicing film, a dicing film base material containing an ionomer obtained by cationically cross-linking a compound having a carboxyl group and an octene-containing copolymer is known (Patent Document 2) ; Having a bottom layer containing a thermoplastic resin having a FICA softening point of 80°C or higher as specified in JIS K7206, and other layers containing a thermoplastic resin having a FICA softening point of 50°C or higher and less than 80°C as specified in JIS K7206 A dicing film base material (Patent Document 3); and a dicing film base material containing a thermoplastic resin having a FICA softening point specified in JIS K7206 of 50°C or more and less than 90°C (Patent Document 4).

又,於專利文獻5中揭示有一種切割膜,其作為適於進行隱形切割(註冊商標)之擴張性優異之切割膜,於-10℃下之初始彈性模數為200MPa以上且380MPa以下,Tan δ(損失彈性模數/儲存彈性模數)為0.080以上且0.3以下。 Furthermore, Patent Document 5 discloses a dicing film that is suitable for invisible cutting (registered trademark) and has excellent expandability. The initial elastic modulus at -10°C is 200 MPa or more and 380 MPa or less. Tan δ (loss elastic modulus/storage elastic modulus) is 0.080 or more and 0.3 or less.

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Document]

[專利文獻1]日本專利特開平9-007976公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 9-007976

[專利文獻2]日本專利特開2000-345129號公報 [Patent Document 2] Japanese Patent Application Laid-Open No. 2000-345129

[專利文獻3]日本專利特開2009-231700號公報 [Patent Document 3] Japanese Patent Application Laid-Open No. 2009-231700

[專利文獻4]日本專利特開2011-216508號公報 [Patent Document 4] Japanese Patent Application Laid-Open No. 2011-216508

[專利文獻5]日本專利特開2015-185591號公報 [Patent Document 5] Japanese Patent Application Laid-Open No. 2015-185591

於專利文獻1中,作為能夠藉由熱收縮步驟去除鬆弛之切割膜,例如記載有具有包含熔點為71℃之離子聚合物(使丙烯酸酯或甲基丙烯酸酯等聚合而成之三元聚合體之離子聚合物)與乙烯-乙酸乙烯酯共聚合體之摻合物所形成層之切割膜。但,對於切割膜之擴張性或強度等切割膜所需之基本性能無任何記載。 Patent Document 1 describes, for example, a dicing film that can remove slack by a heat shrinkage step, including a terpolymer containing an ionic polymer with a melting point of 71° C. (acrylates, methacrylates, etc. are polymerized) Cutting films formed from a blend of ionic polymers) and ethylene-vinyl acetate copolymers. However, there is no description of the basic properties required for dicing films, such as the expandability and strength of the dicing film.

於專利文獻2中,作為切割膜用基材之具體例,記載有含有乙烯/甲基丙烯酸/丙烯酸酯之三元共聚合體等離子聚合物、及含辛烯之共聚合體之切割膜用基材。但,無關於切割膜之熱收縮性之記載。 Patent Document 2 describes a dicing film base material containing a ternary copolymer plasma polymer of ethylene/methacrylic acid/acrylate and an octene-containing copolymer as specific examples of a dicing film base material. However, there is no record on the heat shrinkability of the dicing film.

根據本發明者等人之研究,認為具有包含菲卡軟化點為80℃以上之熱塑性樹脂之層的專利文獻3之切割膜基材、或包含菲卡軟化點為50℃以上且未滿90℃之熱塑性樹脂的專利文獻4之切割膜基材於80℃下之熱收縮性較低,難以藉由熱收縮步驟使鬆弛恢復成原先之狀態。 According to the research of the present inventors, it is considered that the dicing film base material of Patent Document 3 has a layer containing a thermoplastic resin with a Fica softening point of 80°C or higher, or a layer containing a Fica softening point of 50°C or more and less than 90°C. The dicing film base material of Patent Document 4 of thermoplastic resin has low heat shrinkability at 80°C, and it is difficult to restore the relaxation to the original state through the heat shrinkage step.

又,於專利文獻5中記載有具有包含乙烯-α-烯烴共聚合體、或乙烯-α-烯烴共聚合體之離子聚合物之基材的切割膜。 但,並無關於如下切割膜用基材之記載,該切割膜用基材含有包含乙烯-不飽和羧酸-不飽和羧酸酯等三元以上之多元共聚合體之離子聚合物或三元以上之多元共聚合體與乙烯系共聚合體之樹脂組成物。 Furthermore, Patent Document 5 describes a dicing film having a base material including an ethylene-α-olefin copolymer or an ionomer containing an ethylene-α-olefin copolymer. However, there is no description of a base material for a dicing film that contains an ionic polymer or a trivalent or higher copolymer including ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester or the like. Resin composition of multi-component copolymer and ethylene copolymer.

本發明係鑒於上述習知技術所存在之問題點而完成者,其課題在於提供一種用於製造兼具較高強度與較高熱收縮性之切割膜之切割膜基材用樹脂組成物。進而,本發明之課題在於提供一種使用本發明之切割膜基材用樹脂組成物之切割膜基材及切割膜。 The present invention was completed in view of the problems existing in the above-mentioned conventional technologies, and its object is to provide a resin composition for a dicing film base material for producing a dicing film having both high strength and high heat shrinkability. Furthermore, an object of the present invention is to provide a dicing film base material and a dicing film using the resin composition for dicing film base materials of the present invention.

即,根據本發明,提供以下所示之切割膜基材用樹脂組成物、切割膜基材及切割膜。 That is, according to the present invention, there are provided a resin composition for a dicing film base material, a dicing film base material, and a dicing film shown below.

[1]一種切割膜基材用樹脂組成物,其含有:乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下、及乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份),且JIS K7206-1999所規定之菲卡軟化點未滿50℃。 [1] A resin composition for a dicing film base material, containing: 30 parts by mass or more and 90 parts by mass or less of an ionic polymer (A) of an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer, and an ethylene-based Copolymer (B) 10 parts by mass or more and 70 parts by mass or less (where the total of component (A) and component (B) is 100 parts by mass), and the Fica softening point specified in JIS K7206-1999 is less than 50℃.

[2]如[1]記載之切割膜基材用樹脂組成物,其中上述乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)之JIS K7206-1999所規定之菲卡軟化點為25℃以上且60℃以下。 [2] The resin composition for a dicing film base material according to [1], wherein the ionic polymer (A) of the above-mentioned ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer is phenanthrene specified in JIS K7206-1999 The card softening point is 25°C or more and 60°C or less.

[3]如[1]或[2]記載之切割膜基材用樹脂組成物,其中上述乙烯系共聚合體(B)係JIS K7206-1999所規定之菲卡軟化點為50℃以下之樹脂、或不具有上述菲卡軟化點之樹脂。 [3] The resin composition for a dicing film base material according to [1] or [2], wherein the ethylene-based copolymer (B) is a resin having a Fica softening point of 50°C or less as specified in JIS K7206-1999, Or resins that do not have the above-mentioned Fika softening point.

[4]如[1]至[3]中任一項記載之切割膜基材用樹脂組成物,其中 上述乙烯系共聚合體(B)係自乙烯-α-烯烴共聚合體及乙烯-不飽和羧酸酯共聚合體所組成之群組選擇之至少一種。 [4] The resin composition for a dicing film base material according to any one of [1] to [3], wherein The above-mentioned ethylene copolymer (B) is at least one selected from the group consisting of ethylene-α-olefin copolymer and ethylene-unsaturated carboxylic acid ester copolymer.

[5]如[1]至[4]中任一項記載之切割膜基材用樹脂組成物,其中藉由依據JIS K7210-1999之方法於190℃、負載2160g下所測定之上述乙烯系共聚合體(B)之熔融流動速率(MFR)為0.2g/10分鐘~30.0g/10分鐘。 [5] The resin composition for dicing film substrates according to any one of [1] to [4], wherein the above-mentioned ethylene copolymer is measured by the method according to JIS K7210-1999 at 190° C. and a load of 2160 g. The melt flow rate (MFR) of the composite (B) is 0.2g/10 minutes to 30.0g/10 minutes.

[6]如[1]至[5]中任一項記載之切割膜基材用樹脂組成物,其中藉由依據JIS K7210-1999之方法於190℃、負載2160g下所測定之上述切割膜基材用樹脂組成物之熔融流動速率(MFR)為0.1g/10分鐘~50g/10分鐘。 [6] The resin composition for a dicing film base material according to any one of [1] to [5], wherein the dicing film base material is measured by a method according to JIS K7210-1999 at 190° C. and a load of 2160 g. The melt flow rate (MFR) of the resin composition for materials is 0.1g/10 minutes to 50g/10 minutes.

[7]一種切割膜基材,其含有至少一層包含如[1]至[6]中任一項記載之切割膜基材用樹脂組成物之層。 [7] A dicing film base material containing at least one layer containing the resin composition for a dicing film base material according to any one of [1] to [6].

[8]如[7]記載之切割膜基材,其含有:包含如[1]至[6]中任一項記載之切割膜基材用樹脂組成物之第1樹脂層、及積層於上述第1樹脂層之包含樹脂(C)之第2樹脂層。 [8] The dicing film base material according to [7], which contains: a first resin layer containing the resin composition for a dicing film base material according to any one of [1] to [6], and a layer laminated on the above The first resin layer includes a second resin layer containing resin (C).

[9]如[8]記載之切割膜基材,其中上述樹脂(C)係自乙烯-不飽和羧酸系共聚合體及上述乙烯-不飽和羧酸系共聚合體之離子聚合物所組成之群組選擇之至少1種。 [9] The dicing film base material according to [8], wherein the resin (C) is a group consisting of an ethylene-unsaturated carboxylic acid copolymer and an ionic polymer of the ethylene-unsaturated carboxylic acid copolymer. At least 1 of the group’s choices.

[10]一種切割膜,其特徵在於具有:如[7]至[9]中任一項記載之切割膜基材、及積層於上述切割膜基材之至少一面之黏著層。 [10] A dicing film characterized by having: the dicing film base material according to any one of [7] to [9]; and an adhesive layer laminated on at least one side of the dicing film base material.

本發明提供一種用於製造兼具較高強度與較高熱收縮性之切割膜之切割膜基材用樹脂組成物、以及使用其之切割膜基材及切割膜。 The present invention provides a resin composition for a dicing film base material used to produce a dicing film having both high strength and high heat shrinkage, and a dicing film base material and dicing film using the resin composition.

1‧‧‧第1樹脂層 1‧‧‧The 1st resin layer

2‧‧‧第2樹脂層 2‧‧‧The second resin layer

10‧‧‧切割膜基材 10‧‧‧Cutting film substrate

11‧‧‧黏著層 11‧‧‧Adhesive layer

20‧‧‧切割膜 20‧‧‧Cutting film

圖1A係表示本發明之切割膜基材之一實施形態之剖面圖。 FIG. 1A is a cross-sectional view showing one embodiment of the dicing film base material of the present invention.

圖1B係表示本發明之切割膜基材之一實施形態之剖面圖。 FIG. 1B is a cross-sectional view showing one embodiment of the dicing film base material of the present invention.

圖2A係表示本發明之切割膜之一實施形態之剖面圖。 FIG. 2A is a cross-sectional view showing one embodiment of the dicing film of the present invention.

圖2B係表示本發明之切割膜之一實施形態之剖面圖。 FIG. 2B is a cross-sectional view showing one embodiment of the dicing film of the present invention.

以下,對於本發明之切割膜基材用樹脂組成物詳細地進行說明,且亦對切割膜基材及切割膜進行詳細描述。 Hereinafter, the resin composition for the dicing film base material of the present invention will be described in detail, and the dicing film base material and the dicing film will also be described in detail.

再者,於本說明書中,表示數值範圍之「~」之記法係包括數值範圍之下限值與上限值之值之含義。 Furthermore, in this specification, the notation "~" indicating a numerical range includes the meaning of the lower limit and upper limit of the numerical range.

又,「(甲基)丙烯酸」係包含「丙烯酸」及「甲基丙烯酸」雙方所使用之記法,「(甲基)丙烯酸酯」係包含「丙烯酸酯」及「甲基丙烯酸酯」雙方所使用之記法。 In addition, "(meth)acrylic acid" includes both "acrylic acid" and "methacrylic acid", and "(meth)acrylate" includes both "acrylate" and "methacrylate". notation.

於半導體晶圓之製造過程中,切割膜需要於80℃附近之溫度下具有較高之熱收縮性,以利用膜之熱收縮來消除擴張(延伸)步驟後之切割膜之鬆弛(恢復成原先之狀態)。於本發明中,藉由使用如下樹脂組成物製造切割膜基材,可製造兼具較高強度與較高熱收縮性之切割膜,該樹脂組成物包含乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下、及乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份)。其機制雖不明確,但可如下所示般考慮。 In the manufacturing process of semiconductor wafers, the dicing film needs to have high thermal shrinkage at temperatures around 80°C, so that the thermal shrinkage of the film can be used to eliminate the relaxation of the dicing film after the expansion (extension) step (restore to the original state). status). In the present invention, by using the following resin composition to produce a dicing film base material, a dicing film with both higher strength and higher heat shrinkability can be produced. The resin composition includes ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid. The ionomer (A) of the ester copolymer is not less than 30 parts by mass and not more than 90 parts by mass, and the ethylene-based copolymer (B) is not less than 10 parts by mass and not more than 70 parts by mass (wherein, component (A) and component (B) The total is set to 100 parts by mass). Although its mechanism is not clear, it can be considered as follows.

已知藉由對聚烯烴系樹脂調配乙烯系共聚合體而提 高其熱收縮性。但,若使用包含聚烯烴系樹脂與乙烯系共聚合體之樹脂組成物製造膜,則該膜之強度及擴張性作為切割膜並不充分。另一方面,於本發明中,藉由使用乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物及乙烯系共聚合體製造菲卡軟化點未滿50℃之樹脂組成物,可獲得於不使源於離子聚合物之離子交聯結構之膜強度或擴張性(分割性)大幅度降低之情況下提高了熱收縮性之切割膜。 It is known that polyolefin-based resins are prepared by blending ethylene-based copolymers. High thermal shrinkage. However, if a film is produced using a resin composition containing a polyolefin resin and an ethylene copolymer, the strength and expandability of the film are not sufficient as a cutting film. On the other hand, in the present invention, by using an ionic polymer of an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer and an ethylene-based copolymer, a resin composition having a Fica softening point of less than 50° C. can be produced. A cutting film whose heat shrinkability is improved without significantly reducing the film strength or expandability (dividability) derived from the ionically cross-linked structure of the ionic polymer is obtained.

本發明之切割膜可較佳地用於不僅實施將半導體晶圓分割成晶片單元之切割步驟與擴張步驟、且實施熱收縮步驟之半導體元件之製造方法。特別是本發明之切割膜由於兼具較高強度與較高熱收縮性,故而可較佳地用於採用在擴張步驟中對切割膜施加比習知法(刀片切割法或雷射剝蝕法等)大之應力之隱形切割(註冊商標)法之製造方法。藉由使用本發明之切割膜,能夠使分割後之晶片之間隔變得均勻,減少其後之步驟中之製品不良,從而可以較高之產率製造半導體裝置。 The dicing film of the present invention can be preferably used in a manufacturing method of a semiconductor element that performs not only the dicing step and the expanding step of dividing the semiconductor wafer into wafer units, but also the heat shrinking step. In particular, since the dicing film of the present invention has both high strength and high thermal shrinkage, it can be preferably used to apply a method to the dicing film in the expansion step than conventional methods (blade cutting method or laser ablation method, etc.) A manufacturing method using invisible cutting (registered trademark) method for high stress. By using the dicing film of the present invention, the distance between divided wafers can be made uniform, product defects in subsequent steps can be reduced, and semiconductor devices can be manufactured at a higher yield.

以下,列舉作為例示之實施形態進行本發明之說明,但本發明並不限定於以下之實施形態。 Hereinafter, the present invention will be described with reference to exemplary embodiments, but the present invention is not limited to the following embodiments.

1.切割膜基材用樹脂組成物 1. Resin composition for cutting film base material

本發明之第1樣態係切割膜基材用樹脂組成物。切割膜基材用樹脂組成物含有:乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下、及乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份)。 A first aspect of the present invention is a resin composition for a dicing film base material. The resin composition for a dicing film base material contains: 30 parts by mass or more and 90 parts by mass or less of an ionic polymer (A) of an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer, and 10 parts by mass of an ethylene-based copolymer (B) More than 70 parts by mass and less than 70 parts by mass (where the total of component (A) and component (B) is 100 parts by mass).

1-1.樹脂(A) 1-1. Resin (A)

作為樹脂(A)所使用之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(以下,亦簡稱為「離子聚合物(A)」)係乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之羧基之一部分或全部經金屬(離子)中和所得者。於本發明中,將共聚合體之酸基之至少一部分經金屬(離子)中和者稱為「離子聚合物」,將共聚合體之酸基未經金屬(離子)中和者稱為「共聚合體」。 The ionic polymer of ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer (hereinafter, also referred to as "ionic polymer (A)") used as the resin (A) is an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer. It is obtained by neutralizing part or all of the carboxyl groups of saturated carboxylate copolymers with metals (ions). In the present invention, those in which at least part of the acidic groups of the copolymer are neutralized with metal (ions) are called "ionic polymers", and those in which the acidic groups of the copolymer are not neutralized with metals (ions) are called "copolymers" ”.

構成上述離子聚合物(A)之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體係使乙烯與不飽和羧酸與不飽和羧酸酯共聚而成之至少三元之共聚合體,亦可為進而與第4共聚合成分共聚而成之四元以上之多元共聚合體。再者,可單獨使用一種乙烯-不飽和羧酸-不飽和羧酸酯共聚合體,亦可併用兩種以上之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體。 The ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer system constituting the above-mentioned ionic polymer (A) may also be an at least ternary copolymer formed by copolymerizing ethylene, unsaturated carboxylic acid and unsaturated carboxylic acid ester. It is a multi-component copolymer of four or more elements that is further copolymerized with the fourth copolymer component. Furthermore, one type of ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer may be used alone, or two or more types of ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer may be used in combination.

作為構成乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之不飽和羧酸,例如可列舉:丙烯酸、甲基丙烯酸、乙基丙烯酸、伊康酸、伊康酸酐、反丁烯二酸、丁烯酸、順丁烯二酸、順丁烯二酸酐等碳數4~8之不飽和羧酸等。特佳為丙烯酸或甲基丙烯酸。 Examples of the unsaturated carboxylic acid constituting the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer include acrylic acid, methacrylic acid, ethylacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, Unsaturated carboxylic acids with 4 to 8 carbon atoms such as crotonic acid, maleic acid, maleic anhydride, etc. Particularly preferred are acrylic or methacrylic.

作為構成乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之不飽和羧酸酯,較佳為不飽和羧酸烷基酯。烷基酯之烷基部位之碳數較佳為1~12,更佳為1~8,進而較佳為1~4。作為烷基部位之例,可列舉:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、2-乙基己基、異辛基等。作為不飽和羧酸烷基酯之具體例,可列舉:丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丁酯、丙烯酸正丁酯、 丙烯酸異辛酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丁酯、順丁烯二酸二甲酯、順丁烯二酸二乙酯等(甲基)丙烯酸烷基酯。 As the unsaturated carboxylic acid ester constituting the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer, an unsaturated carboxylic acid alkyl ester is preferred. The number of carbon atoms in the alkyl moiety of the alkyl ester is preferably 1 to 12, more preferably 1 to 8, and still more preferably 1 to 4. Examples of the alkyl moiety include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, 2-butyl, 2-ethylhexyl, isooctyl, and the like. Specific examples of unsaturated carboxylic acid alkyl esters include: methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, Alkyl (meth)acrylates such as isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, dimethyl maleate, diethyl maleate, etc. .

當乙烯-不飽和羧酸-不飽和羧酸酯共聚合體為四元以上之多元共聚合體時,亦可包含形成多元共聚合體之單體(第4共聚合成分)。作為第4共聚合成分,可列舉:不飽和烴(例如,丙烯、丁烯、1,3-丁二烯、戊烯、1,3-戊二烯、1-己烯等)、乙烯酯(例如,乙酸乙烯酯、丙酸乙烯酯等)、乙烯基硫酸或乙烯基硝酸等之氧化物、鹵素化合物(例如,氯乙烯、氟乙烯等)、含乙烯基之一級/二級胺化合物、一氧化碳、二氧化硫等。 When the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer is a multi-component copolymer of four or more members, it may also contain a monomer (the fourth copolymer component) forming the multi-component copolymer. Examples of the fourth copolymerized component include unsaturated hydrocarbons (for example, propylene, butene, 1,3-butadiene, pentene, 1,3-pentadiene, 1-hexene, etc.), vinyl esters ( For example, vinyl acetate, vinyl propionate, etc.), oxides of vinyl sulfuric acid or vinyl nitric acid, halogen compounds (for example, vinyl chloride, vinyl fluoride, etc.), vinyl-containing primary/secondary amine compounds, carbon monoxide , sulfur dioxide, etc.

共聚合體之形態可為嵌段共聚合體、無規共聚合體、接枝共聚合體中之任意者,亦可為三元共聚合體、四元以上之多元共聚合體中之任意者。其中,就可工業獲取之方面而言,較佳為三元無規共聚合體、或三元無規共聚合體之接枝共聚合體,更佳為三元無規共聚合體。 The form of the copolymer may be any of block copolymers, random copolymers, and graft copolymers, or may be any of ternary copolymers and multi-component copolymers of four or more members. Among them, in terms of industrial availability, a ternary random copolymer or a graft copolymer of a ternary random copolymer is preferred, and a ternary random copolymer is more preferred.

作為乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之具體例,可列舉:乙烯-甲基丙烯酸-丙烯酸丁酯共聚合體等三元共聚合體。 Specific examples of the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer include terpolymers such as ethylene-methacrylic acid-butyl acrylate copolymer.

將構成乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之構成單位之總量設為100質量%時,乙烯-不飽和羧酸-不飽和羧酸酯共聚合體中之來自不飽和羧酸之構成單位之含有比率較佳為4質量%以上且20質量%以下,更佳為5質量%以上且15質量%以下。將構成乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之構成單位之總量設為100質量%時,乙烯-不飽和羧酸-不飽和羧酸酯共聚合體中之來 自不飽和羧酸酯之構成單位之含有比率較佳為1質量%以上且20質量%以下,更佳為5質量%以上且18質量%以下,特佳為5質量%以上且17質量%以下。就膜之擴張性之觀點而言,來自不飽和羧酸酯之構成單位之含有比率較佳為1質量%以上,較佳為5質量%以上。又,就防止黏連及融合之觀點而言,來自不飽和羧酸酯之構成單位之含有比率較佳為20質量%以下,更佳為18質量%以下,特佳為17質量%以下。 When the total amount of the structural units constituting the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer is 100% by mass, the amount of the unsaturated carboxylic acid-derived ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer in the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer The content ratio of the constituent units is preferably 4% by mass or more and 20% by mass or less, and more preferably 5% by mass or more and 15% by mass or less. When the total amount of the structural units constituting the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer is 100% by mass, the The content ratio of the constituent units of the unsaturated carboxylic acid ester is preferably 1 mass% or more and 20 mass% or less, more preferably 5 mass% or more and 18 mass% or less, particularly preferably 5 mass% or more and 17 mass% or less. . From the viewpoint of the expandability of the film, the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is preferably 1 mass % or more, and more preferably 5 mass % or more. Moreover, from the viewpoint of preventing adhesion and fusion, the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is preferably 20 mass% or less, more preferably 18 mass% or less, and particularly preferably 17 mass% or less.

於本發明中,作為樹脂(A)所使用之離子聚合物(A)較佳為上述乙烯-不飽和羧酸-不飽和羧酸酯共聚合體中所含之羧基經金屬離子以任意比例交聯(中和)所得者。作為酸基之中和所使用之金屬離子,可列舉:鋰離子、鈉離子、鉀離子、銣離子、銫離子、鋅離子、鎂離子、錳離子等金屬離子。該等金屬離子之中,就工業化製品之易獲取性而言,較佳為鎂離子、鈉離子及鋅離子,更佳為鈉離子及鋅離子,特佳為鋅離子。 In the present invention, the ionic polymer (A) used as the resin (A) is preferably one in which the carboxyl groups contained in the above-mentioned ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer are cross-linked by metal ions in any proportion. (Neutralization) Gainer. Examples of metal ions used for neutralization of acid groups include metal ions such as lithium ions, sodium ions, potassium ions, rubidium ions, cesium ions, zinc ions, magnesium ions, and manganese ions. Among these metal ions, in terms of easy availability of industrialized products, magnesium ions, sodium ions and zinc ions are preferred, sodium ions and zinc ions are more preferred, and zinc ions are particularly preferred.

金屬離子可單獨使用一種,或亦可併用兩種以上。 One type of metal ions may be used alone, or two or more types of metal ions may be used in combination.

離子聚合物(A)中之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之中和度(以下,亦稱為「離子聚合物(A)之中和度」)無特別限定,較佳為10%~100%,更佳為30%~100%。若中和度為上述範圍內,則使膜強度或分割性提高,故而較佳。 The degree of neutralization of the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer in the ionic polymer (A) (hereinafter also referred to as the "neutralization degree of the ionic polymer (A)") is not particularly limited. The best range is 10%~100%, and the more preferred range is 30%~100%. When the degree of neutralization is within the above range, it is preferable because the film strength and separability are improved.

再者,離子聚合物(A)之中和度係經金屬離子中和之羧基相對於乙烯-不飽和羧酸-不飽和羧酸酯共聚合體中所含之全部羧基之莫耳數之比例(莫耳%)。 Furthermore, the degree of neutralization of the ionic polymer (A) is the ratio of the molar number of carboxyl groups neutralized by metal ions to the total carboxyl groups contained in the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer ( mol%).

作為乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A),可使用上市之市售品。作為市售品,例如可列舉: Dow-Mitsui Polychemicals股份有限公司製造之Himilan(註冊商標)系列等。 As the ionic polymer (A) of the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer, commercially available products can be used. Examples of commercially available products include: Himilan (registered trademark) series manufactured by Dow-Mitsui Polychemicals Co., Ltd., etc.

乙烯-不飽和羧酸-不飽和羧酸酯之離子聚合物(A)之熔融流動速率(MFR)較佳為0.2g/10分鐘~20.0g/10分鐘之範圍,更佳為0.5g/10分鐘~20.0g/10分鐘,進而較佳為0.5g/10分鐘~18.0g/10分鐘。若熔融流動速率為上述範圍內,則於成形膜時有利。 The melt flow rate (MFR) of the ionic polymer (A) of ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester is preferably in the range of 0.2g/10 minutes to 20.0g/10 minutes, more preferably 0.5g/10 minutes to 20.0g/10 minutes, and more preferably 0.5g/10 minutes to 18.0g/10 minutes. If the melt flow rate is within the above range, it is advantageous when forming a film.

再者,MFR係藉由依據JIS K7210-1999之方法於190℃、負載2160g下進行測定所得之值。 In addition, MFR is a value measured at 190°C and a load of 2160g according to the method of JIS K7210-1999.

進而,乙烯-不飽和羧酸-不飽和羧酸酯之離子聚合物(A)之菲卡軟化點較佳為25℃以上且60℃以下,更佳為35℃以上且60℃以下。若離子聚合物(A)之菲卡軟化點為上述範圍內,則容易將樹脂組成物之菲卡軟化點調整為未滿50℃。 Furthermore, the Fica softening point of the ionic polymer (A) of ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester is preferably 25°C or more and 60°C or less, more preferably 35°C or more and 60°C or less. If the Fica softening point of the ionomer (A) is within the above range, it is easy to adjust the Fica softening point of the resin composition to less than 50°C.

再者,菲卡軟化點係依據JIS K7206-1999所規定之A50法進行測定所得之值。 In addition, the Fica softening point is a value measured based on the A50 method specified in JIS K7206-1999.

本發明之切割膜基材用樹脂組成物中之樹脂(A)之含量相對於樹脂(A)及下述樹脂(B)之合計100質量份,為30質量份以上且90質量份以下,較佳為40質量份以上且90質量份以下,更佳為50質量份以上且70質量份以下。若樹脂(A)之含量為30質量份以上,則可獲得作為切割膜之充分之強度,若為90質量份以下,則可提高熱收縮率。 The content of resin (A) in the resin composition for dicing film base materials of the present invention is 30 parts by mass or more and 90 parts by mass or less based on 100 parts by mass of the total of resin (A) and the following resin (B). Preferably, it is 40 parts by mass or more and 90 parts by mass or less, and more preferably, it is 50 parts by mass or more and 70 parts by mass or less. If the content of the resin (A) is 30 parts by mass or more, sufficient strength as a dicing film can be obtained, and if it is 90 parts by mass or less, the thermal shrinkage rate can be increased.

1-2.樹脂(B) 1-2. Resin (B)

作為樹脂(B)所使用之乙烯系共聚合體(B)(以下,亦簡稱為「共聚合體(B)」)係乙烯與其他單體之共聚合體,其種類無特別限定。 但,重要的是,與上述離子聚合物(A)一起製備樹脂組成物時,將如使該組成物之菲卡軟化點未滿50℃之離子聚合物(A)與共聚合體(B)加以組合。就此種觀點而言,共聚合體(B)較佳為菲卡軟化點為50℃以下之樹脂、或不具有菲卡軟化點之樹脂。又,於共聚合體(B)具有菲卡軟化點之情形時,就加工性之觀點而言,較佳為菲卡軟化點為25℃以上。 The ethylene-based copolymer (B) used as the resin (B) (hereinafter also simply referred to as "copolymer (B)") is a copolymer of ethylene and other monomers, and its type is not particularly limited. However, it is important that when preparing a resin composition together with the above-mentioned ionic polymer (A), the ionic polymer (A) and the copolymer (B) such that the Fika softening point of the composition is less than 50°C are added. combination. From this point of view, the copolymer (B) is preferably a resin having a Fica softening point of 50° C. or lower, or a resin having no Fica softening point. Moreover, when the copolymer (B) has a Ficca softening point, from the viewpoint of processability, it is preferable that the Ficca softening point is 25° C. or higher.

再者,菲卡軟化點係依據JIS K7206-1999所規定之A50法進行測定所得之值。 In addition, the Fica softening point is a value measured based on the A50 method specified in JIS K7206-1999.

作為本發明中所使用之乙烯系共聚合體(B)之一例,可列舉:乙烯-α-烯烴共聚合體、乙烯-不飽和羧酸酯共聚合體、乙烯-乙烯酯共聚合體等,較佳為乙烯-a烯烴共聚合體、及乙烯-不飽和羧酸酯共聚合體。 Examples of the ethylene-based copolymer (B) used in the present invention include ethylene-α-olefin copolymer, ethylene-unsaturated carboxylic acid ester copolymer, ethylene-vinyl ester copolymer, etc., and ethylene is preferred. -a olefin copolymer, and ethylene-unsaturated carboxylic acid ester copolymer.

乙烯-α-烯烴共聚合體係乙烯與α-烯烴之共聚合體。該共聚合體中可僅包含1種α-烯烴,亦可包含2種以上。α-烯烴之具體例包括:丙烯、1-丁烯、1-戊烯、1-己烯、3-甲基-1-丁烯、3,3-二甲基-1-丁烯、3-甲基-1-戊烯、4-甲基-1-戊烯、1-辛烯、1-癸烯、1-十二烯等。其中,就易獲取性而言,較佳為丙烯、1-丁烯、1-戊烯、1-己烯、4-甲基-1-戊烯、及1-辛烯。再者,乙烯-α-烯烴共聚合體可為無規共聚合體,亦可為嵌段共聚合體,較佳為無規共聚合體。 Ethylene-α-olefin copolymer system is a copolymer of ethylene and α-olefin. The copolymer may contain only one type of α-olefin, or may contain two or more types. Specific examples of α-olefins include propylene, 1-butene, 1-pentene, 1-hexene, 3-methyl-1-butene, 3,3-dimethyl-1-butene, 3- Methyl-1-pentene, 4-methyl-1-pentene, 1-octene, 1-decene, 1-dodecene, etc. Among them, in terms of easy availability, propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene, and 1-octene are preferred. Furthermore, the ethylene-α-olefin copolymer may be a random copolymer or a block copolymer, and is preferably a random copolymer.

乙烯-α-烯烴共聚合體中所含之來自乙烯之構成單位之含有比例無特別限定,較佳為超過50mol%且95mol%以下,更佳為70mol%以上且94mol%以下。乙烯-α-烯烴共聚合體中所含之來自α-烯烴之構成單位(以下,亦記為「α-烯烴單元」)之比例較佳為5mol%以上且未滿50mol%,更佳為6mol%以上且30mol%以 下。此種乙烯-α-烯烴共聚合體對於確保收縮性有利。 The content ratio of the structural units derived from ethylene contained in the ethylene-α-olefin copolymer is not particularly limited, but is preferably more than 50 mol% and not more than 95 mol%, more preferably not less than 70 mol% and not more than 94 mol%. The proportion of structural units derived from α-olefins (hereinafter also referred to as "α-olefin units") contained in the ethylene-α-olefin copolymer is preferably 5 mol% or more and less than 50 mol%, more preferably 6 mol% More than 30mol% Down. Such an ethylene-α-olefin copolymer is advantageous for ensuring shrinkage properties.

作為乙烯-α-烯烴共聚合體,較佳為密度為895kg/m3以下、特別是860~890kg/m3者。 As the ethylene-α-olefin copolymer, one with a density of 895 kg/m 3 or less, particularly 860 to 890 kg/m 3 is preferred.

乙烯-不飽和羧酸酯共聚合體係乙烯與不飽和羧酸酯之共聚合體。該共聚合體中可僅包含1種不飽和羧酸酯構成單位,亦可包含2種以上。作為構成不飽和羧酸酯構成單元之不飽和羧酸,例如可列舉:丙烯酸、甲基丙烯酸、乙基丙烯酸、伊康酸、伊康酸酐、反丁烯二酸、丁烯酸、順丁烯二酸、順丁烯二酸酐等碳數4~8之不飽和羧酸等。特佳為丙烯酸或甲基丙烯酸。 Ethylene-unsaturated carboxylic acid ester copolymer system is a copolymer of ethylene and unsaturated carboxylic acid ester. The copolymer may contain only one type of unsaturated carboxylic acid ester structural unit, or may contain two or more types. Examples of the unsaturated carboxylic acid constituting the unit of the unsaturated carboxylic acid ester include acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, crotonic acid, and maleic acid. Diacids, maleic anhydride and other unsaturated carboxylic acids with 4 to 8 carbon atoms, etc. Particularly preferred are acrylic or methacrylic.

進而,作為乙烯-不飽和羧酸酯共聚合體中所含之不飽和羧酸酯構成單位,較佳為不飽和羧酸烷基酯。烷基酯之烷基部位之碳數較佳為1~12,更佳為1~8,進而較佳為1~4。作為烷基部位之例,可列舉:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、2-乙基己基、異辛基等。作為不飽和羧酸烷基酯之具體例,可列舉:丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丁酯、丙烯酸正丁酯、丙烯酸異辛酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丁酯、順丁烯二酸二甲酯、順丁烯二酸二乙酯等(甲基)丙烯酸烷基酯。 Furthermore, as the unsaturated carboxylic acid ester constituent unit contained in the ethylene-unsaturated carboxylic acid ester copolymer, an unsaturated carboxylic acid alkyl ester is preferred. The number of carbon atoms in the alkyl moiety of the alkyl ester is preferably 1 to 12, more preferably 1 to 8, and still more preferably 1 to 4. Examples of the alkyl moiety include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, 2-butyl, 2-ethylhexyl, isooctyl, and the like. Specific examples of unsaturated carboxylic acid alkyl esters include: methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, and ethyl methacrylate. Alkyl (meth)acrylates such as isobutyl methacrylate, dimethyl maleate, and diethyl maleate.

將構成乙烯-不飽和羧酸酯共聚合體之構成單位之總量設為100質量%時,乙烯-不飽和羧酸酯共聚合體中之來自不飽和羧酸酯之構成單位之含有比率較佳為5質量%以上且40質量%以下,更佳為7質量%以上且40質量%以下,特佳為8質量%以上且40質量%以下。若來自不飽和羧酸酯之構成單位之含有比率為上述上限值以下,則就膜加工性之觀點而言較佳。又,若來自不飽和羧 酸酯之構成單位之含有比率為上述下限值以上,則就收縮性之觀點而言較佳。 When the total amount of the structural units constituting the ethylene-unsaturated carboxylic acid ester copolymer is 100% by mass, the content ratio of the structural units derived from the unsaturated carboxylic acid ester in the ethylene-unsaturated carboxylic acid ester copolymer is preferably: 5 mass % or more and 40 mass % or less, more preferably 7 mass % or more and 40 mass % or less, particularly preferably 8 mass % or more and 40 mass % or less. It is preferable from the viewpoint of film processability when the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is equal to or less than the above-mentioned upper limit. Also, if it comes from unsaturated carboxylic acid It is preferable from the viewpoint of shrinkage that the content ratio of the constituent units of the acid ester is equal to or higher than the above-mentioned lower limit.

乙烯系共聚合體(B)之熔融流動速率(MFR)較佳為0.2g/10分鐘~30.0g/10分鐘之範圍,更佳為0.5g/10分鐘~25.0g/10分鐘。若熔融流動速率為上述範圍內,則於成形樹脂組成物時有利。 The melt flow rate (MFR) of the ethylene-based copolymer (B) is preferably in the range of 0.2g/10 minutes to 30.0g/10 minutes, more preferably 0.5g/10 minutes to 25.0g/10 minutes. If the melt flow rate is within the above range, it is advantageous when molding the resin composition.

再者,MFR係藉由依據JIS K7210-1999之方法於190℃、負載2160g下進行測定所得之值。 In addition, MFR is a value measured at 190°C and a load of 2160g according to the method of JIS K7210-1999.

進而,乙烯系共聚合體(B)之熔點較佳為30℃以上且100℃以下,更佳為30℃以上且80℃以下。 Furthermore, the melting point of the ethylene-based copolymer (B) is preferably from 30°C to 100°C, more preferably from 30°C to 80°C.

再者,熔點係依據JIS-K7121(1987年)藉由示差掃描熱量計(DSC)進行測定所得之熔解溫度。 In addition, the melting point is the melting temperature measured with a differential scanning calorimeter (DSC) in accordance with JIS-K7121 (1987).

切割膜基材用樹脂組成物中之樹脂(B)之含量相對於樹脂(A)及樹脂(B)之合計100質量份,為10質量份以上且未滿70質量份,較佳為10質量份以上且60質量份以下,更佳為20質量份以上且50質量份以下。若樹脂(B)之含量為10質量份以上,則發揮由樹脂(B)產生之熱收縮率提高效果,若未滿70質量份,則切割膜基材之強度變得不充分之擔憂較低。 The content of resin (B) in the resin composition for dicing film base materials is 10 parts by mass or more and less than 70 parts by mass, preferably 10 parts by mass, based on 100 parts by mass of the total of resin (A) and resin (B). Parts by mass or more and 60 parts by mass or less, more preferably 20 parts by mass or more and 50 parts by mass or less. If the content of the resin (B) is 10 parts by mass or more, the effect of increasing the thermal shrinkage rate of the resin (B) is exerted. If it is less than 70 parts by mass, there is less concern that the strength of the dicing film base material will become insufficient. .

1-3.其他聚合體及添加劑 1-3. Other polymers and additives

亦可於切割膜基材用樹脂組成物中在無損本發明之效果之範圍內視需要添加其他聚合體或各種添加劑。作為其他聚合體之例,可列舉:聚醯胺、聚胺基甲酸酯、二元共聚合體之離子聚合物等。此種其他聚合體相對於樹脂(A)及樹脂(B)之合計100質量份,可以例如20質量份以下之比例進行調配。作為添加劑之一例,可列舉: 抗靜電劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、顏料、染料、滑劑、抗黏連劑、抗靜電劑、防黴劑、抗菌劑、難燃劑、難燃助劑、交聯劑、交聯助劑、發泡劑、發泡助劑、無機填充劑、纖維強化材料等。 Other polymers or various additives may also be added to the resin composition for dicing film base materials as necessary within the range that does not impair the effects of the present invention. Examples of other polymers include polyamide, polyurethane, binary copolymer and ionic polymer. Such other polymers can be prepared in a proportion of 20 parts by mass or less based on 100 parts by mass of the resin (A) and the resin (B) in total. Examples of additives include: Antistatic agents, antioxidants, heat stabilizers, light stabilizers, UV absorbers, pigments, dyes, slip agents, anti-adhesive agents, antistatic agents, antifungal agents, antibacterial agents, flame retardants, flame retardant auxiliaries , cross-linking agents, cross-linking aids, foaming agents, foaming aids, inorganic fillers, fiber reinforced materials, etc.

1-4.樹脂組成物之物性 1-4. Physical properties of resin composition

本發明之樹脂組成物之JIS K7206-1999所規定之菲卡軟化點未滿50℃,較佳為25℃以上且未滿50℃。若樹脂組成物之菲卡軟化點未滿50℃,則熱收縮率提高,若為25℃以上,則可將樹脂組成物加工成膜狀。 The Fika softening point specified in JIS K7206-1999 of the resin composition of the present invention is less than 50°C, and preferably is 25°C or more and less than 50°C. If the Ficcar softening point of the resin composition is less than 50°C, the thermal shrinkage rate increases. If it is 25°C or more, the resin composition can be processed into a film shape.

本發明之樹脂組成物於190℃、2160g負載下所測定之熔融流動速率(MFR)較佳為0.1g/10分鐘~50g/10分鐘,更佳為0.5g/10分鐘~20g/10分鐘。 The melt flow rate (MFR) of the resin composition of the present invention measured at 190°C and a load of 2160g is preferably 0.1g/10min~50g/10min, more preferably 0.5g/10min~20g/10min.

再者,MFR係藉由依據JIS K7210-1999之方法於190℃、負載2160g下進行測定所得之值。 In addition, MFR is a value measured at 190°C and a load of 2160g according to the method of JIS K7210-1999.

樹脂組成物之中和度無特別限定,較佳為10%~85%,進而較佳為15%~82%。若樹脂組成物之中和度為10%以上,則可進一步提高晶片分割性,藉由為85%以下,膜之成形性優異。樹脂組成物之中和度基本上取決於離子聚合物(A)之中和度及其含量,可藉由下述式進行計算。 The degree of neutralization of the resin composition is not particularly limited, but is preferably 10% to 85%, and more preferably 15% to 82%. If the neutralization degree of the resin composition is 10% or more, the wafer separation property can be further improved, and if it is 85% or less, the film formability will be excellent. The degree of neutralization of the resin composition basically depends on the degree of neutralization of the ionic polymer (A) and its content, and can be calculated by the following formula.

(樹脂組成物之中和度)=(離子聚合物(A)之中和度)×(樹脂組成物中之離子聚合物(A)之比例) (Degree of neutralization of the resin composition) = (Degree of neutralization of the ionic polymer (A)) × (Proportion of the ionic polymer (A) in the resin composition)

因此,於離子聚合物(A)之中和度較低之情形時,使其含量略多,或於離子聚合物(A)之中和度較高之情形時,使其含量略少, 藉此可調整樹脂組成物之中和度。 Therefore, when the degree of neutralization of the ionic polymer (A) is low, the content is slightly larger, or when the degree of neutralization of the ionic polymer (A) is high, the content is slightly smaller. This can adjust the degree of neutralization of the resin composition.

進而,本發明之樹脂組成物於加工成厚度100μm之膜時於80℃下之熱收縮率較佳為6%以上,更佳為7%以上。若於80℃下之熱收縮率為6%以上,則可較佳地用於製造能夠藉由熱收縮步驟消除鬆弛之切割膜。熱收縮率之上限無特別限定,就熱收縮後之後續步驟(拾取步驟)中之不良率降低之觀點而言,較佳為20%以下。 Furthermore, when the resin composition of the present invention is processed into a film with a thickness of 100 μm, the thermal shrinkage rate at 80°C is preferably 6% or more, more preferably 7% or more. If the heat shrinkage rate at 80°C is 6% or more, it can be preferably used to produce a cutting film that can eliminate slack through a heat shrinkage step. The upper limit of the heat shrinkage rate is not particularly limited, but from the viewpoint of reducing the defective rate in the subsequent step (pickup step) after heat shrinkage, it is preferably 20% or less.

再者,於本案中,於80℃下之熱收縮率係藉由以下方法進行測定所得之值。 In addition, in this case, the thermal shrinkage rate at 80°C is a value measured by the following method.

將樹脂組成物膜切斷成厚度100μm、寬度方向25mm×長度方向150mm,標記出間隔100mm之標線,而作為試片樣品。將其放置於撒有澱粉之玻璃板之上,於80℃之加熱板上加熱2分鐘,測定膜上之標線於加熱後之間隔,根據以下之式計算收縮率(%)。 The resin composition film was cut into a thickness of 100 μm, a width of 25 mm and a length of 150 mm, and marking lines were marked at intervals of 100 mm to prepare a test piece sample. Place it on a glass plate sprinkled with starch, heat it on a hot plate at 80°C for 2 minutes, measure the distance between the marking lines on the film after heating, and calculate the shrinkage rate (%) according to the following formula.

收縮率(%)=100mm-收縮後之標線之間隔距離(mm)/100mm×100 Shrinkage rate (%)=100mm-distance between marking lines after shrinkage (mm)/100mm×100

1-5.樹脂組成物之製造方法 1-5. Manufacturing method of resin composition

切割膜基材用樹脂組成物可藉由將樹脂(A)及樹脂(B)、進而視需要之其他聚合體或添加劑等加以混合而獲得。如上所述,由於本發明之樹脂組成物之JIS K7206-1999所規定之菲卡軟化點未滿50℃,故而以樹脂組成物之菲卡軟化點未滿50℃之方式,選擇樹脂(A)、樹脂(B)及根據所需之添加劑之種類或量。 The resin composition for a dicing film base material can be obtained by mixing resin (A) and resin (B), and optionally other polymers or additives. As described above, since the Fica softening point of the resin composition of the present invention specified in JIS K7206-1999 is less than 50°C, the resin (A) is selected so that the Fica softening point of the resin composition is less than 50°C. , resin (B) and the type or amount of additives required.

樹脂組成物之製造方法無特別限定,例如可藉由將所有成分乾摻後進行熔融混練而獲得。 The manufacturing method of the resin composition is not particularly limited. For example, it can be obtained by dry blending all the components and then melting and kneading them.

2.切割膜基材 2. Cutting film substrate

本發明之第2樣態係含有至少一層包含上述切割膜基材用樹脂組成物之層之切割膜基材。圖1A及1B係表示本發明之切割膜基材10之一實施形態之剖面圖。圖1A係僅含有包含上述切割膜基材用樹脂組成物之第1樹脂層1之單層切割膜基材,圖1B係由包含上述切割膜基材用樹脂組成物之第1樹脂層1、與包含其他樹脂或樹脂組成物之第2樹脂層2積層所得之多層切割膜基材。 A second aspect of the present invention is a dicing film base material including at least one layer including the resin composition for dicing film base materials. 1A and 1B are cross-sectional views showing one embodiment of the dicing film base material 10 of the present invention. Figure 1A shows a single-layer dicing film base material including only the first resin layer 1 including the above-mentioned resin composition for dicing film base materials. Figure 1B shows a single-layer dicing film base material including the first resin layer 1 including the above-mentioned resin composition for dicing film base materials. A multilayer dicing film base material obtained by laminating the second resin layer 2 containing other resins or resin compositions.

本發明之切割膜基材之強度較佳為25%模數為5MPa以上且15MPa以下之範圍,更佳為6MPa以上且12MPa以下。若25%模數為5MPa以上,則作為切割膜基材之晶片分割性(強度)優異,若為15MPa以下,則擴張性優異。 The strength of the cutting film base material of the present invention is preferably in the range of 25% modulus from 5 MPa to 15 MPa, more preferably from 6 MPa to 12 MPa. If the 25% modulus is 5 MPa or more, the dicing film base material will have excellent wafer splitting properties (strength), and if it is 15 MPa or less, the dicing film base material will have excellent expandability.

本發明中之模數係依據JIS K 7127-1999,對於切割膜基材之機械軸方向(MD方向,Machine Direction)及正交方向(TD方向,Transverse Direction),於試驗速度:500mm/min、試片:寬10mm×長200mm、夾具間隔:100mm之條件下,作為伸長距離25%或50%時之膜強度(25%模數或50%模數)進行測定所得之值。 The modulus in the present invention is based on JIS K 7127-1999. For the machine direction (MD direction, Machine Direction) and orthogonal direction (TD direction, Transverse Direction) of the cutting film substrate, the test speed is: 500mm/min, Test piece: width 10mm x length 200mm, clamp spacing: 100mm, measured as the film strength (25% modulus or 50% modulus) when the elongation distance is 25% or 50%.

本發明之切割膜基材於80℃下之熱收縮率較佳為6%以上且20%以下之範圍,更佳為7%以上。若於80℃下之熱收縮率為6%以上,則作為切割膜基材之熱收縮特性(鬆弛之消除)優異,若為20%以下,則熱收縮後之後續步驟(拾取步驟)中之不良率降低優異。 The thermal shrinkage rate of the cutting film base material of the present invention at 80°C is preferably in the range of 6% or more and 20% or less, and more preferably 7% or more. If the heat shrinkage rate at 80°C is 6% or more, the heat shrinkage characteristics (removal of slack) of the dicing film base material will be excellent. If it is 20% or less, the subsequent steps (picking up steps) after heat shrinkage will be Excellent reduction in defective rate.

再者,於本案中,於80℃下之熱收縮率係藉由以下方法進行測定所得之值。 In addition, in this case, the thermal shrinkage rate at 80°C is a value measured by the following method.

將切割膜基材切斷成厚度100μm、寬度方向25mm×長度方向 150mm,標記出間隔100mm之標線,而作為試片樣品。將其放置於撒有澱粉之玻璃板之上,於80℃之加熱板上加熱2分鐘,測定膜上之標線於加熱後之間隔,根據以下之式計算收縮率(%)。 Cut the dicing film base material into a thickness of 100 μm and a thickness of 25 mm in the width direction × length direction. 150mm, mark the marking lines at intervals of 100mm, and use them as test specimens. Place it on a glass plate sprinkled with starch, heat it on a hot plate at 80°C for 2 minutes, measure the distance between the marking lines on the film after heating, and calculate the shrinkage rate (%) according to the following formula.

收縮率(%)=100mm-收縮後之標線之間隔距離(mm)/100mm×100 Shrinkage rate (%)=100mm-distance between marking lines after shrinkage (mm)/100mm×100

2-1.第1樹脂層 2-1. 1st resin layer

第1樹脂層係包含上述切割膜基材用樹脂組成物,即,含有乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下及乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份)、且JIS K7206-1999所規定之菲卡軟化點未滿50℃的切割膜基材用樹脂組成物之層。又,第1樹脂層亦可為由上述切割膜基材用樹脂組成物構成之層。此種樹脂組成物層之強度與熱收縮率之平衡性優異。 The first resin layer contains the above-mentioned resin composition for dicing film base materials, that is, 30 parts by mass or more and 90 parts by mass or less of the ionic polymer (A) containing an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer, and Ethylene-based copolymer (B) 10 parts by mass or more and 70 parts by mass or less (where the total of component (A) and component (B) is 100 parts by mass), and the FICA softening point specified in JIS K7206-1999 The layer of the resin composition used as the base material of the cutting film below 50°C. Furthermore, the first resin layer may be a layer composed of the above-mentioned resin composition for dicing film base materials. This resin composition layer has an excellent balance between strength and thermal shrinkage.

於切割膜基材為單層構成之情形時,較佳為成為原料之樹脂組成物中之離子聚合物(A)之含量為70質量份以上且90質量份以下、乙烯系共聚合體(B)之含量為10質量份以上且30質量份以下,更佳為離子聚合物(A)之含量為80質量份以上且90質量份以下、乙烯系共聚合體(B)之含量為10質量份以上且20質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份)。如此,藉由使用離子聚合物(A)之比率較高之樹脂組成物,即便為單層,亦可達成作為切割膜基材所需之強度。 When the dicing film base material has a single-layer structure, it is preferable that the content of the ionomer (A) in the resin composition used as the raw material is 70 parts by mass or more and 90 parts by mass or less, and the ethylene-based copolymer (B) The content of the ionomer (A) is 10 parts by mass or more and 30 parts by mass or less. More preferably, the content of the ionomer (A) is 80 parts by mass or more and 90 parts by mass or less, and the content of the ethylene-based copolymer (B) is 10 parts by mass or more and 20 parts by mass or less (where the total of component (A) and component (B) is 100 parts by mass). In this way, by using a resin composition with a high ratio of ionomer (A), it is possible to achieve the required strength as a dicing film base material even in a single layer.

另一方面,於切割膜基材為多層構成之情形時,成為第1樹脂層之原料之樹脂組成物只要為上述本發明之樹脂組成物, 則離子聚合物(A)與共聚合體(B)之比率無特別限定,只要離子聚合物(A)之含量為30質量份以上且90質量份以下、乙烯系共聚合體(B)之含量為10質量份以上且70質量份以下即可。 On the other hand, when the dicing film base material has a multi-layer structure, the resin composition used as the raw material of the first resin layer only needs to be the above-mentioned resin composition of the present invention. The ratio of the ionic polymer (A) and the copolymer (B) is not particularly limited, as long as the content of the ionic polymer (A) is 30 parts by mass or more and 90 parts by mass or less, and the content of the ethylene-based copolymer (B) is 10 parts by mass. It may be more than 70 parts by mass and less than 70 parts by mass.

2-2.第2樹脂層 2-2. Second resin layer

第2樹脂層係包含樹脂(C)之層或由樹脂(C)構成之層,樹脂(C)只要為與構成第1樹脂層之樹脂組成物之接著性較高之樹脂,則無特別限定。藉由將包含樹脂(C)(或由樹脂(C)構成)之第2樹脂層與第1樹脂層積層,能夠於不產生層間剝離之問題之情況下,提高切割膜基材之強度,且維持切割膜所需之晶片分割性與擴張性之平衡。 The second resin layer is a layer including resin (C) or a layer composed of resin (C). The resin (C) is not particularly limited as long as it has high adhesion to the resin composition constituting the first resin layer. . By laminating the second resin layer containing resin (C) (or consisting of resin (C)) and the first resin layer, the strength of the dicing film base material can be improved without causing the problem of interlayer delamination, and Maintain the balance between wafer segmentability and expandability required for cutting films.

<樹脂C> <Resin C>

本發明中之樹脂(C)較佳為自乙烯-不飽和羧酸系共聚合體(以下,亦簡稱為「共聚合體(C)」)及上述乙烯-不飽和羧酸系共聚合體之離子聚合物(以下,亦簡稱為「離子聚合物(C)」)所組成之群組選擇之至少1種。作為樹脂(C)所使用之乙烯-不飽和羧酸系共聚合體之離子聚合物係上述乙烯-不飽和羧酸系共聚合體之羧基之一部分或全部經金屬(離子)中和所得者。 The resin (C) in the present invention is preferably an ionic polymer formed from an ethylene-unsaturated carboxylic acid copolymer (hereinafter, also referred to as "copolymer (C)") and the above-mentioned ethylene-unsaturated carboxylic acid copolymer. (Hereinafter, also referred to as "ionic polymer (C)"), at least one selected from the group consisting of. The ionic polymer of the ethylene-unsaturated carboxylic acid copolymer used as the resin (C) is obtained by neutralizing part or all of the carboxyl groups of the ethylene-unsaturated carboxylic acid copolymer with a metal (ion).

再者,如下述詳細說明般,樹脂(C)亦可為與構成第1樹脂層之樹脂組成物中所含之樹脂(A)或樹脂(B)同樣之樹脂。 Furthermore, as described in detail below, the resin (C) may be the same resin as the resin (A) or resin (B) contained in the resin composition constituting the first resin layer.

上述共聚合體(C)、或構成其離子聚合物(C)之乙烯-不飽和羧酸系共聚合體係使乙烯與不飽和羧酸共聚而成之至少二元之共聚合體,亦可為進而與第3共聚合成分共聚而成之三元以上 之多元共聚合體。再者,可單獨使用一種乙烯-不飽和羧酸系共聚合體,亦可併用兩種以上之乙烯-不飽和羧酸系共聚合體。 The above-mentioned copolymer (C), or an at least binary copolymer obtained by copolymerizing ethylene and an unsaturated carboxylic acid in the ethylene-unsaturated carboxylic acid copolymer system constituting the ionic polymer (C) may also be further combined with More than three elements copolymerized by the third copolymer component of multiple copolymers. Furthermore, one type of ethylene-unsaturated carboxylic acid copolymer may be used alone, or two or more types of ethylene-unsaturated carboxylic acid copolymer may be used in combination.

作為構成乙烯-不飽和羧酸二元共聚合體之不飽和羧酸,例如可列舉:丙烯酸、甲基丙烯酸、乙基丙烯酸、伊康酸、伊康酸酐、反丁烯二酸、丁烯酸、順丁烯二酸、順丁烯二酸酐等碳數4~8之不飽和羧酸等。特佳為丙烯酸或甲基丙烯酸。 Examples of the unsaturated carboxylic acid constituting the ethylene-unsaturated carboxylic acid binary copolymer include: acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic acid anhydride, fumaric acid, crotonic acid, Unsaturated carboxylic acids with 4 to 8 carbon atoms such as maleic acid and maleic anhydride. Particularly preferred are acrylic or methacrylic.

於乙烯-不飽和羧酸系共聚合體(C)為三元以上之多元共聚合體時,亦可包含形成多元共聚合體之單體(第3共聚合成分)。作為第3共聚合成分,可列舉:不飽和羧酸酯(例如,丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丁酯、丙烯酸正丁酯、丙烯酸異辛酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丁酯、順丁烯二酸二甲酯、順丁烯二酸二乙酯等(甲基)丙烯酸烷基酯)、不飽和烴(例如,丙烯、丁烯、1,3-丁二烯、戊烯、1,3-戊二烯、1-己烯等)、乙烯酯(例如,乙酸乙烯酯、丙酸乙烯酯等)、乙烯基硫酸或乙烯基硝酸等之氧化物、鹵素化合物(例如,氯乙烯、氟乙烯等)、含乙烯基之一級/二級胺化合物、一氧化碳、二氧化硫等,作為該等共聚合成分,較佳為不飽和羧酸酯。 When the ethylene-unsaturated carboxylic acid copolymer (C) is a three- or higher-valent multi-valent copolymer, it may also contain a monomer (third copolymerization component) that forms the multi-valent copolymer. Examples of the third copolymerizable component include unsaturated carboxylic acid esters (for example, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, methacrylic acid Ethyl ester, isobutyl methacrylate, dimethyl maleate, diethyl maleate and other (meth)acrylic acid alkyl esters), unsaturated hydrocarbons (for example, propylene, butene, 1 , 3-butadiene, pentene, 1,3-pentadiene, 1-hexene, etc.), vinyl ester (for example, vinyl acetate, vinyl propionate, etc.), vinyl sulfuric acid or vinyl nitric acid, etc. Oxides, halogen compounds (for example, vinyl chloride, vinyl fluoride, etc.), vinyl-containing primary/secondary amine compounds, carbon monoxide, sulfur dioxide, etc. As these copolymerization components, unsaturated carboxylic acid esters are preferred.

例如,於乙烯-不飽和羧酸系共聚合體(C)為三元共聚合體之情形時,可較佳地列舉:乙烯與不飽和羧酸與不飽和羧酸酯之三元共聚合體、乙烯與不飽和羧酸與不飽和烴之三元共聚合體等。 For example, when the ethylene-unsaturated carboxylic acid copolymer (C) is a terpolymer, preferably: a terpolymer of ethylene, an unsaturated carboxylic acid, and an unsaturated carboxylic acid ester; Ternary copolymers of unsaturated carboxylic acids and unsaturated hydrocarbons, etc.

作為不飽和羧酸酯,較佳為不飽和羧酸烷基酯,烷基酯之烷基部位之碳數較佳為1~12,更佳為1~8,進而較佳為1~4。作為烷基部位之例,可列舉:甲基、乙基、正丙基、異丙基、 正丁基、異丁基、第二丁基、2-乙基己基、異辛基等。 The unsaturated carboxylic acid ester is preferably an unsaturated carboxylic acid alkyl ester, and the number of carbon atoms in the alkyl moiety of the alkyl ester is preferably 1 to 12, more preferably 1 to 8, and still more preferably 1 to 4. Examples of alkyl moieties include: methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, 2-butyl, 2-ethylhexyl, isooctyl, etc.

作為不飽和羧酸酯之具體例,可列舉:烷基部位之碳數為1~12之不飽和羧酸烷基酯(例如,丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丁酯、丙烯酸正丁酯、丙烯酸異辛酯等丙烯酸烷基酯,甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丁酯等甲基丙烯酸烷基酯,順丁烯二酸二甲酯、順丁烯二酸二乙酯等順丁烯二酸烷基酯)等。 Specific examples of unsaturated carboxylic acid esters include unsaturated carboxylic acid alkyl esters having 1 to 12 carbon atoms in the alkyl moiety (for example, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate ester, isooctyl acrylate and other alkyl acrylates, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate and other alkyl methacrylates, dimethyl maleate, maleate Diethyl diacid and other maleic acid alkyl esters), etc.

於不飽和羧酸烷基酯之中,更佳為烷基部位之碳數為1~4之(甲基)丙烯酸烷基酯。 Among the unsaturated carboxylic acid alkyl esters, a (meth)acrylic acid alkyl ester having a carbon number of 1 to 4 in the alkyl moiety is more preferred.

共聚合體之形態可為嵌段共聚合體、無規共聚合體、接枝共聚合體中之任意者,亦可為二元共聚合體、三元以上之多元共聚合體中之任意者。其中,就可工業獲取之方面而言,較佳為二元無規共聚合體、三元無規共聚合體、二元無規共聚合體之接枝共聚合體或三元無規共聚合體之接枝共聚合體,更佳為二元無規共聚合體或三元無規共聚合體。 The form of the copolymer may be any of a block copolymer, a random copolymer, or a graft copolymer, or may be any of a binary copolymer, and a multi-component copolymer of three or more elements. Among them, in terms of industrial availability, preferred are binary random copolymers, ternary random copolymers, graft copolymers of binary random copolymers, or graft copolymers of ternary random copolymers. The combination is preferably a binary random copolymer or a ternary random copolymer.

作為乙烯-不飽和羧酸系共聚合體之具體例,可列舉:乙烯-丙烯酸共聚合體、乙烯-甲基丙烯酸共聚合體等二元共聚合體、乙烯-甲基丙烯酸-丙烯酸異丁酯共聚合體等三元共聚合體。又,亦可使用作為乙烯-不飽和羧酸系共聚合體上市之市售品,例如可使用Dow-Mitsui Polychemicals公司製造之Nucrel Series(註冊商標)等。 Specific examples of ethylene-unsaturated carboxylic acid copolymers include binary copolymers such as ethylene-acrylic acid copolymers and ethylene-methacrylic acid copolymers, and tertiary copolymers such as ethylene-methacrylic acid-isobutyl acrylate copolymers. meta-copolymer. In addition, commercially available products marketed as ethylene-unsaturated carboxylic acid copolymers can also be used. For example, Nucrel Series (registered trademark) manufactured by Dow-Mitsui Polychemicals, etc. can be used.

乙烯-不飽和羧酸系共聚合體中之不飽和羧酸之共聚合比(質量比)較佳為4質量%~20質量%,更佳為5質量%~15質量%。乙烯-不飽和羧酸系共聚合體中之不飽和羧酸酯之共聚合比 (質量比)較佳為1質量%~20質量%,更佳為5質量%~18質量%。就擴張性之觀點而言,來自不飽和羧酸酯之構成單位之含有比率較佳為1質量%以上,較佳為5質量%以上。又,就防止黏連及融合之觀點而言,來自不飽和羧酸酯之構成單位之含有比率較佳為20質量%以下,更佳為18質量%以下。 The copolymerization ratio (mass ratio) of the unsaturated carboxylic acid in the ethylene-unsaturated carboxylic acid copolymer is preferably 4% to 20% by mass, more preferably 5% to 15% by mass. Copolymerization ratio of unsaturated carboxylic acid ester in ethylene-unsaturated carboxylic acid copolymer (Mass ratio) is preferably 1 mass% to 20 mass%, more preferably 5 mass% to 18 mass%. From the viewpoint of expandability, the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is preferably 1 mass % or more, and more preferably 5 mass % or more. Moreover, from the viewpoint of preventing adhesion and fusion, the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is preferably 20 mass% or less, more preferably 18 mass% or less.

於本發明中,作為樹脂(C)所使用之離子聚合物(C)較佳為上述乙烯-不飽和羧酸系共聚合體中所含之羧基經金屬離子以任意比例交聯(中和)所得者。作為酸基之中和所使用之金屬離子,可列舉:鋰離子、鈉離子、鉀離子、銣離子、銫離子、鋅離子、鎂離子、錳離子等金屬離子。該等金屬離子之中,就工業化製品之易獲取性而言,較佳為鎂離子、鈉離子及鋅離子,更佳為鈉離子及鋅離子,特佳為鋅離子。 In the present invention, the ionic polymer (C) used as the resin (C) is preferably obtained by cross-linking (neutralizing) the carboxyl groups contained in the above-mentioned ethylene-unsaturated carboxylic acid copolymer with metal ions in any proportion. By. Examples of metal ions used for neutralization of acid groups include metal ions such as lithium ions, sodium ions, potassium ions, rubidium ions, cesium ions, zinc ions, magnesium ions, and manganese ions. Among these metal ions, in terms of easy availability of industrialized products, magnesium ions, sodium ions and zinc ions are preferred, sodium ions and zinc ions are more preferred, and zinc ions are particularly preferred.

金屬離子可單獨使用一種,或亦可併用兩種以上。 One type of metal ions may be used alone, or two or more types of metal ions may be used in combination.

離子聚合物(C)中之乙烯-不飽和羧酸系共聚合體之中和度較佳為10%~85%,進而較佳為15%~82%。若中和度為10%以上,則可進一步提高晶片分割性,藉由為85%以下,膜之加工性或成形性優異。 The degree of neutralization of the ethylene-unsaturated carboxylic acid copolymer in the ionic polymer (C) is preferably 10% to 85%, and more preferably 15% to 82%. If the degree of neutralization is 10% or more, the wafer separability can be further improved, and if it is 85% or less, the processability or formability of the film will be excellent.

再者,中和度係經金屬離子中和之羧基相對於乙烯-不飽和羧酸系共聚合體中所含之全部羧基之莫耳數之比例(莫耳%)。 Furthermore, the degree of neutralization is the ratio (mol%) of the molar number of carboxyl groups neutralized by metal ions to the total carboxyl groups contained in the ethylene-unsaturated carboxylic acid copolymer.

樹脂(C)之熔融流動速率(MFR)較佳為0.2g/10分鐘~20.0g/10分鐘之範圍,更佳為0.5g/10分鐘~20.0g/10分鐘,進而較佳為0.5g/10分鐘~18.0g/10分鐘。若熔融流動速率為上述範圍內,則於膜成形時有利。 The melt flow rate (MFR) of the resin (C) is preferably in the range of 0.2g/10 minutes to 20.0g/10 minutes, more preferably 0.5g/10 minutes to 20.0g/10 minutes, and further preferably 0.5g/ 10 minutes~18.0g/10 minutes. If the melt flow rate is within the above range, it is advantageous during film formation.

再者,MFR係藉由依據JIS K7210-1999之方法於190℃、負載 2160g下進行測定所得之值。 Furthermore, the MFR is measured at 190°C under load according to the method of JIS K7210-1999. Value measured at 2160g.

樹脂(C)較佳為菲卡軟化點為50℃以上且100℃以下。藉由在包含菲卡軟化點未滿50℃之樹脂組成物之第1樹脂層積層菲卡軟化點較高之樹脂作為第2樹脂層,可提高切割膜基材之強度或耐熱性。 The resin (C) preferably has a Ficar softening point of 50°C or more and 100°C or less. By laminating a resin with a higher Fica softening point as a second resin layer on the first resin layer containing a resin composition having a Fica softening point of less than 50° C., the strength or heat resistance of the dicing film base material can be improved.

再者,菲卡軟化點係依據JIS K7206-1999所規定之A50法進行測定所得之值。 In addition, the Fica softening point is a value measured based on the A50 method specified in JIS K7206-1999.

<其他聚合體及添加劑> <Other polymers and additives>

亦可於構成第2樹脂層之樹脂(C)中在無損本發明之效果之範圍內視需要添加各種添加劑或其他樹脂。作為上述添加劑之一例,可列舉:抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、顏料、染料、滑劑、抗黏連劑、抗靜電劑、防黴劑、抗菌劑、難燃劑、難燃助劑、交聯劑、交聯助劑、發泡劑、發泡助劑、無機填充劑、纖維強化材等。就防止熱融合之觀點而言,亦可少量添加上述添加劑。 Various additives or other resins may be added as necessary to the resin (C) constituting the second resin layer within a range that does not impair the effects of the present invention. Examples of the above-mentioned additives include antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, pigments, dyes, lubricants, anti-adhesive agents, antistatic agents, antifungal agents, antibacterial agents, and flame retardants. , flame retardant additives, cross-linking agents, cross-linking additives, foaming agents, foaming aids, inorganic fillers, fiber reinforcements, etc. From the viewpoint of preventing thermal fusion, the above-mentioned additives may also be added in small amounts.

2-3.層構成 2-3. Layer composition

本發明之切割膜基材存在僅包含上述第1樹脂層1之單層構成者(圖1A)、以及包含上述第1樹脂層1及上述第2樹脂層2之多層構成者(圖1B)。多層構成之切割膜基材只要包含上述兩層,則其層構成無特別限定,就防止層間剝離之觀點而言,較理想為第1樹脂層與第2樹脂層直接積層。 The dicing film base material of the present invention has a single-layer structure including only the first resin layer 1 (Fig. 1A), and a multi-layer structure including the first resin layer 1 and the second resin layer 2 (Fig. 1B). The layer structure of the multi-layered dicing film base material is not particularly limited as long as it includes the above two layers. From the viewpoint of preventing interlayer delamination, it is preferable that the first resin layer and the second resin layer are directly laminated.

多層構成之切割膜基材亦可為成為3層以上之多層構成。例如,可為於積層數層使用構成第1樹脂層之樹脂組成物所 成形之片材後設置第2樹脂層之構成,亦可為由兩層第1樹脂層夾持第2樹脂層之構成。又,亦可為不僅有第1樹脂層與第2樹脂層、且積層有其他樹脂層之構成。 The multi-layer dicing film base material may also have a multi-layer structure of three or more layers. For example, the resin composition constituting the first resin layer may be used in several laminated layers. The structure in which a second resin layer is provided after forming the sheet may also be a structure in which the second resin layer is sandwiched between two first resin layers. Moreover, it may be a structure which not only has a 1st resin layer and a 2nd resin layer, but also has other resin layers laminated|stacked.

作為構成與本發明之切割膜基材積層之其他樹脂層的樹脂之代表例,可列舉:選自直鏈狀低密度聚乙烯(LLDPE)、低密度聚乙烯(LDPE)、乙烯-α-烯烴共聚合體、聚丙烯、及乙烯-乙烯酯共聚合體中之單體或包含任意數種之摻合物。 Representative examples of the resin constituting the other resin layer laminated with the dicing film base material of the present invention include linear low-density polyethylene (LLDPE), low-density polyethylene (LDPE), and ethylene-α-olefin. Monomers or blends of any number of copolymers, polypropylene, and ethylene-vinyl ester copolymers.

又,積層之其他樹脂層可為功能性層(例如,黏著片材等),亦可為聚烯烴膜(或片材)、聚氯乙烯膜(或片材)等基材。上述基材可為具有單層或多層之任意構造者。於本發明中,包括該等基材在內稱為「切割膜基材」。 In addition, the other laminated resin layer may be a functional layer (for example, an adhesive sheet, etc.), or may be a base material such as a polyolefin film (or sheet) or a polyvinyl chloride film (or sheet). The above-mentioned substrate can be any structure having a single layer or multiple layers. In the present invention, these substrates are referred to as "cutting film substrates".

亦可對切割膜基材表面實施例如電暈放電處理等公知之表面處理,以提高切割膜基材表面之接著力。 The surface of the dicing film base material can also be subjected to known surface treatments such as corona discharge treatment to improve the adhesion of the surface of the dicing film base material.

又,就提高耐熱性之觀點而言,亦可對第1樹脂層、第2樹脂層或其他樹脂層、或者切割膜基材視需要進行電子束照射。 Moreover, from the viewpoint of improving heat resistance, the first resin layer, the second resin layer, other resin layers, or the diced film base material may be irradiated with electron beams as necessary.

2-4.切割膜基材之製造方法 2-4. Manufacturing method of cutting film base material

作為單層之切割膜基材之製造方法,可列舉:藉由公知方法將切割膜用樹脂組成物加工成膜狀之方法。將樹脂組成物加工成膜狀之方法無特別限定,例如可藉由習知公知之T字壓鑄成形法、T字壓軋成形法、吹脹成形法、擠出層壓法、壓延成形法等各種成形方法製造膜。 An example of a method for manufacturing a single-layer dicing film base material is a method of processing a resin composition for a dicing film into a film shape by a known method. The method of processing the resin composition into a film is not particularly limited. For example, the conventionally known T-shaped die casting method, T-shaped roll forming method, inflation molding method, extrusion lamination method, calendar forming method, etc. Various forming methods are used to manufacture membranes.

作為多層切割膜基材之製造方法,可列舉:將構成第1樹脂層之樹脂組成物及構成第2樹脂層之樹脂(C)分別藉由公知之 方法加工成膜狀,並進行積層之方法。將樹脂組成物或樹脂加工成膜狀之方法無特別限定,例如可藉由習知公知之T字壓鑄成形法、T字壓軋成形法、吹脹成形法、擠出層壓法、壓延成形法等各種成形方法製造膜。 As a method of manufacturing the multilayer dicing film base material, the resin composition constituting the first resin layer and the resin (C) constituting the second resin layer are each prepared by a well-known method. The method is to process it into a film shape and laminate it. The method of processing the resin composition or resin into a film is not particularly limited. For example, the conventionally known T-shaped die casting method, T-shaped roll forming method, inflation molding method, extrusion lamination method, and calendering method can be used. Films can be manufactured using various forming methods, including the

又,多層之切割膜基材可藉由對構成第1樹脂層之樹脂組成物、及構成第2樹脂層之樹脂(C)進行例如共擠出層壓而製造。 In addition, the multilayer dicing film base material can be produced by, for example, coextrusion and lamination of the resin composition constituting the first resin layer and the resin (C) constituting the second resin layer.

例如,於藉由T字模膜成形機或擠出塗佈成形機等將構成第1樹脂層之樹脂組成物積層於成為第2樹脂層之樹脂(C)之膜之表面之情形時,為了提高與第2樹脂層之接著性,可藉由共擠出塗佈成形機經由接著性樹脂層而形成。關於此種接著性樹脂,作為代表例,可列舉選自上述各種乙烯共聚合體、或該等之不飽和羧酸接枝物中之單體或包含任意數種之摻合物。 For example, when the resin composition constituting the first resin layer is laminated on the surface of the film of the resin (C) that becomes the second resin layer using a T-die film molding machine or an extrusion coating molding machine, in order to improve The adhesiveness with the second resin layer can be formed through the adhesive resin layer using a coextrusion coating molding machine. Typical examples of such adhesive resins include monomers selected from the above-mentioned various ethylene copolymers or unsaturated carboxylic acid grafts thereof, or blends containing any number thereof.

又,作為本發明之切割膜基材之成形例,可列舉如下方法,即,使用T字模膜成形機或擠出塗佈成形機,藉由使構成第1樹脂層之樹脂組成物熱接著於成為第2樹脂層之樹脂(C)之膜之表面而形成多層體。 In addition, as an example of molding the dicing film base material of the present invention, there can be cited a method in which the resin composition constituting the first resin layer is thermally bonded using a T-die film molding machine or an extrusion coating molding machine. The surface of the resin (C) film serving as the second resin layer forms a multilayer body.

再者,雖記載的是在成為第2樹脂層之樹脂(C)之膜上形成包含成為第1樹脂層之樹脂組成物之層之方法,但亦可與之相反地,藉由在成為第1樹脂層之樹脂組成物之膜上由成為第2樹脂層之樹脂(C)形成層,或於其他樹脂層之上設置第1樹脂或第2樹脂層之方法而製造本發明之切割膜基材。 Furthermore, although the method described is a method of forming a layer including the resin composition that becomes the first resin layer on the film of the resin (C) that becomes the second resin layer, it may also be conversely possible by forming a layer of the resin composition that becomes the first resin layer. The cutting film base of the present invention is produced by forming a layer of resin (C) that becomes the second resin layer on the film of the resin composition of the first resin layer, or by providing the first resin or the second resin layer on other resin layers. material.

切割膜基材之厚度無特別限定,若考慮用作切割膜之構成部件,則就切割時之框架保持之觀點而言,較佳為65μm以上, 就擴張性之觀點而言,較佳為200μm以下。又,構成多層之切割膜基材之各樹脂層之厚度只要其等之合計不超過切割膜基材之上述厚度則無特別限定,較佳為第1樹脂層、第2樹脂層均為30μm以上且100μm以下,第1樹脂層與第2樹脂層之厚度之比較佳為30/70~70/30。 The thickness of the dicing film base material is not particularly limited, but if it is considered to be used as a component of the dicing film, from the viewpoint of maintaining the frame during cutting, it is preferably 65 μm or more. From the viewpoint of expandability, it is preferably 200 μm or less. In addition, the thickness of each resin layer constituting the multi-layered dicing film base material is not particularly limited as long as the total of them does not exceed the above-mentioned thickness of the dicing film base material. It is preferable that the first resin layer and the second resin layer are both 30 μm or more. And 100 μm or less, the ratio of the thickness of the first resin layer and the second resin layer is preferably 30/70~70/30.

3.切割膜 3. Cutting film

本發明之第3樣態係具備上述本發明之切割膜基材、及積層於其至少一面之黏著層之切割膜。圖2A及圖2B係表示本發明之切割膜20之一實施形態之剖面圖。圖2A所示之切割膜20具有僅包含第1樹脂層1之切割膜基材10、及設置於其表面之黏著層11,圖2B所示之切割膜20具有包含第1樹脂層1及第2樹脂層2之切割膜基材10、及設置於其表面之黏著層11。 A third aspect of the present invention is a dicing film provided with the above-mentioned dicing film base material of the present invention and an adhesive layer laminated on at least one side thereof. 2A and 2B are cross-sectional views showing an embodiment of the dicing film 20 of the present invention. The dicing film 20 shown in FIG. 2A has a dicing film base material 10 including only the first resin layer 1 and an adhesive layer 11 provided on its surface. The dicing film 20 shown in FIG. 2B has a dicing film base material 10 including the first resin layer 1 and the first resin layer 1. 2. The cutting film base material 10 of the resin layer 2 and the adhesive layer 11 provided on its surface.

切割膜較佳為於最表層形成有黏著層之構成。黏著層配置於切割膜基材之表面。可經由該黏著層將切割膜貼附於半導體晶圓,進行半導體晶圓之切割。再者,於圖2B中,將黏著層11配置於包含本發明之切割膜基材用樹脂組成物之第1樹脂層1之上,但本發明並不限定於此種構成。黏著層11亦可配置於第2樹脂層2(或其他樹脂層)之上。 The cutting film is preferably formed with an adhesive layer on the outermost surface layer. The adhesive layer is arranged on the surface of the cutting film base material. The cutting film can be attached to the semiconductor wafer through the adhesive layer to perform cutting of the semiconductor wafer. Furthermore, in FIG. 2B , the adhesive layer 11 is disposed on the first resin layer 1 including the resin composition for the dicing film base material of the present invention, but the present invention is not limited to this configuration. The adhesive layer 11 can also be disposed on the second resin layer 2 (or other resin layers).

<黏著層> <Adhesive layer>

本發明之切割膜係具備本發明之切割膜基材、及設置於切割膜基材之單面之黏著層者,於黏著層貼合固定成為切割加工之對象之半導體晶圓。黏著層之厚度亦取決於黏著劑之種類,較佳為3~100 μm,進而較佳為3~50μm。 The dicing film of the present invention includes the dicing film base material of the present invention and an adhesive layer provided on one side of the dicing film base material, and the semiconductor wafer to be diced is bonded and fixed to the adhesive layer. The thickness of the adhesive layer also depends on the type of adhesive, preferably 3 to 100 μm, and more preferably 3 to 50 μm.

作為構成黏著層之黏著劑,可使用習知公知之黏著劑。黏著劑之例包括:橡膠系、丙烯酸系、聚矽氧系、聚乙烯醚系黏著劑;輻射硬化型黏著劑;加熱發泡型黏著劑等。其中,若考慮切割膜自半導體晶圓之剝離性等,則黏著層較佳為包含紫外線硬化型黏著劑。 As the adhesive constituting the adhesive layer, conventionally known adhesives can be used. Examples of adhesives include: rubber-based, acrylic-based, polysilicone-based, polyvinyl ether-based adhesives; radiation hardening adhesives; heating foaming adhesives, etc. Among them, considering the peelability of the dicing film from the semiconductor wafer, etc., the adhesive layer preferably contains an ultraviolet curable adhesive.

可構成黏著層之丙烯酸系黏著劑之例包括:(甲基)丙烯酸酯之均聚合體、及(甲基)丙烯酸酯與共聚合性單體之共聚合體。(甲基)丙烯酸酯之具體例包括:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸異壬酯等(甲基)丙烯酸烷基酯,(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丁酯、(甲基)丙烯酸羥基己酯等(甲基)丙烯酸羥基烷基酯,(甲基)丙烯酸環氧丙酯等。 Examples of acrylic adhesives that can constitute the adhesive layer include homopolymers of (meth)acrylate and copolymers of (meth)acrylate and copolymerizable monomers. Specific examples of (meth)acrylate include: (methyl)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth)acrylate )Alkyl (meth)acrylates such as octyl acrylate, isononyl (meth)acrylate, etc., hydroxyethyl (meth)acrylate, hydroxybutyl (meth)acrylate, hydroxyhexyl (meth)acrylate, etc. Hydroxyalkyl (meth)acrylate, glycidyl (meth)acrylate, etc.

與(甲基)丙烯酸酯之共聚合性單體之具體例包括:(甲基)丙烯酸、伊康酸、順丁烯二酸酐、(甲基)丙烯醯胺、(甲基)丙烯酸N-羥基甲基醯胺、(甲基)丙烯酸烷基胺基烷基酯(例如,甲基丙烯酸二甲基胺基乙酯、甲基丙烯酸第三丁基胺基乙酯等)、乙酸乙烯酯、苯乙烯、丙烯腈等。 Specific examples of copolymerizable monomers with (meth)acrylate include: (meth)acrylic acid, itaconic acid, maleic anhydride, (meth)acrylamide, (meth)acrylic acid N-hydroxyl group Methylamide, alkylaminoalkyl (meth)acrylate (for example, dimethylaminoethyl methacrylate, tert-butylaminoethyl methacrylate, etc.), vinyl acetate, benzene Ethylene, acrylonitrile, etc.

可構成黏著層之紫外線硬化型黏著劑無特別限定,含有上述丙烯酸系黏著劑、紫外線硬化成分(能夠於丙烯酸系黏著劑之聚合物側鏈加成碳-碳雙鍵之成分)、及光聚合起始劑。進而,亦可於紫外線硬化型接著劑中視需要添加交聯劑、黏著賦予劑、填充劑、抗老化劑、著色劑等添加劑等。 The ultraviolet curable adhesive that can form the adhesive layer is not particularly limited and contains the above-mentioned acrylic adhesive, an ultraviolet curable component (a component that can add carbon-carbon double bonds to the polymer side chain of the acrylic adhesive), and photopolymerization starter. Furthermore, additives such as a cross-linking agent, an adhesion-imparting agent, a filler, an anti-aging agent, and a colorant may be added to the ultraviolet curing adhesive as necessary.

紫外線硬化型黏著劑中所含之紫外線硬化成分係例 如於分子中具有碳-碳雙鍵,且能夠藉由自由基聚合而硬化之單體、低聚物或聚合物。紫外線硬化成分之具體例包括:三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、1,6-己二醇(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯等(甲基)丙烯酸與多元醇之酯或其低聚物;氰尿酸2-丙烯基二-3-丁烯基酯、異氰尿酸2-羥乙基雙(2-丙烯醯氧基乙基)酯、異氰尿酸三(2-丙烯醯氧基乙基)酯、異氰尿酸三(2-甲基丙烯醯氧基乙基)酯等異氰尿酸酯等。 Examples of ultraviolet curing ingredients contained in ultraviolet curing adhesives Such as monomers, oligomers or polymers that have carbon-carbon double bonds in the molecule and can be hardened by free radical polymerization. Specific examples of ultraviolet curing components include: trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol ( Meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate and other esters of (meth)acrylic acid and polyols or their oligomers; cyanuric acid 2-propenyl Di-3-butenyl ester, 2-hydroxyethyl bis(2-propenyloxyethyl) isocyanurate, tris(2-propenyloxyethyl)isocyanurate, triisocyanurate Isocyanurates such as (2-methacryloyloxyethyl) ester, etc.

紫外線硬化型黏著劑中所含之光聚合起始劑之具體例包括:安息香甲醚、安息香異丙醚、安息香異丁醚等安息香烷基醚類,α-羥基環己基苯基酮等芳香族酮類,苯偶醯二甲基縮酮等芳香族縮酮類,聚乙烯二苯甲酮、氯9-氧硫

Figure 108128323-A0101-12-0028-10
、十二烷基9-氧硫
Figure 108128323-A0101-12-0028-11
、二甲基9-氧硫
Figure 108128323-A0101-12-0028-12
、二乙基9-氧硫
Figure 108128323-A0101-12-0028-13
等9-氧硫
Figure 108128323-A0101-12-0028-14
類等。 Specific examples of photopolymerization initiators contained in ultraviolet curing adhesives include: benzoin alkyl ethers such as benzoin methyl ether, benzoin isopropyl ether, and benzoin isobutyl ether, and aromatic compounds such as α-hydroxycyclohexyl phenyl ketone. Ketones, aromatic ketals such as benzyl dimethyl ketal, polyvinyl benzophenone, chlorine-9-oxosulfide
Figure 108128323-A0101-12-0028-10
, dodecyl 9-oxosulfide
Figure 108128323-A0101-12-0028-11
, dimethyl 9-oxosulfide
Figure 108128323-A0101-12-0028-12
, diethyl 9-oxosulfide
Figure 108128323-A0101-12-0028-13
Etc. 9-oxysulfur
Figure 108128323-A0101-12-0028-14
Class etc.

紫外線硬化型黏著劑中所含之交聯劑之例包括:聚異氰酸酯化合物、三聚氰胺樹脂、尿素樹脂、聚胺、含羧基之聚合物等。 Examples of cross-linking agents contained in UV-curable adhesives include polyisocyanate compounds, melamine resins, urea resins, polyamines, carboxyl-containing polymers, etc.

較佳為於本發明之切割膜之黏著層之表面貼附隔離膜。藉由貼附隔離膜,可保持黏著層之表面平滑。又,使半導體製造用膜之操作或搬運變得容易,且亦可於隔離膜上進行標記加工。 Preferably, a release film is attached to the surface of the adhesive layer of the cutting film of the present invention. By attaching a release film, the surface of the adhesive layer can be kept smooth. In addition, the film for semiconductor manufacturing can be easily handled and transported, and marking processing can also be performed on the isolation film.

隔離膜可為紙、或聚乙烯、聚丙烯、聚對苯二甲酸乙二酯等之合成樹脂膜等。又,亦可對隔離膜之與黏著層相接之面視需要實施聚矽氧處理或氟處理等脫模處理以提高自黏著層之剝離性。隔離膜之厚度通常為10~200μm左右,較佳為25~100μm左右。 The isolation film can be paper, or a synthetic resin film such as polyethylene, polypropylene, polyethylene terephthalate, etc. In addition, the surface of the isolation film that is in contact with the adhesive layer may be subjected to a release treatment such as silicone treatment or fluorine treatment if necessary to improve the peelability of the self-adhesive layer. The thickness of the isolation film is usually about 10 to 200 μm, preferably about 25 to 100 μm.

<切割膜之製造方法> <Manufacturing method of cutting film>

於製造本發明之切割膜時,可使用如下方法,即,使用公知之方法例如凹版輥式塗佈機、逆輥塗佈機、接觸輥塗佈機、浸漬輥塗機、棒式塗佈機、刮刀塗佈機、噴霧塗佈機等將黏著劑直接塗佈於切割膜基材之方法,或者藉由上述公知之方法將黏著劑塗佈於剝離片材上設置黏著層後,貼合於切割膜基材之表面層而轉印黏著層之方法等。 When manufacturing the cutting film of the present invention, the following method can be used, that is, using a known method such as a gravure roll coater, a reverse roll coater, a contact roll coater, a dip roll coater, and a rod coater. , blade coater, spray coater, etc. to directly apply the adhesive to the cutting film base material, or apply the adhesive to the peeling sheet by the above-mentioned known method and then lay the adhesive layer on the peeling sheet. Methods of cutting the surface layer of the film substrate and transferring the adhesive layer, etc.

又,藉由將本發明之樹脂組成物、及構成黏著層之材料共擠出(共擠出成形法),可獲得作為本發明之切割膜基材與黏著層之積層體之切割膜。進而藉由在所獲得之積層體之基材(第1樹脂層)側設置第2樹脂層,亦可製造具有包含第1樹脂層及第2樹脂層之切割膜基材之切割膜。 Furthermore, by co-extruding the resin composition of the present invention and the material constituting the adhesive layer (co-extrusion molding method), a dicing film as a laminate of the dicing film base material and the adhesive layer of the present invention can be obtained. Furthermore, by providing a second resin layer on the base material (first resin layer) side of the obtained laminate, a dicing film having a dicing film base material including a first resin layer and a second resin layer can also be produced.

又,亦可對黏著劑組成物之層視需要實施加熱交聯而使之成為黏著層。 Moreover, if necessary, the layer of the adhesive composition may be heated and cross-linked to form an adhesive layer.

進而,亦可於黏著層之表面上貼附隔離膜。 Furthermore, a separation film may be attached to the surface of the adhesive layer.

[實施例] [Example]

其次,基於實施例詳細地說明本發明,但本發明並不限定於該等實施例。 Next, the present invention will be described in detail based on examples, but the present invention is not limited to these examples.

1.樹脂(A) 1.Resin(A)

作為樹脂(A),準備下述表1所記載之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體或乙烯-不飽和羧酸系共聚合體之鋅(Zn)離子中和離子聚合物(以下,稱為「離子聚合物」)。 As the resin (A), an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer or an ethylene-unsaturated carboxylic acid copolymer zinc (Zn) ion-neutralized ion polymer ( Hereinafter, referred to as "ionic polymer").

[表1]

Figure 108128323-A0101-12-0030-1
[Table 1]
Figure 108128323-A0101-12-0030-1

2.樹脂(B) 2.Resin(B)

作為樹脂(B),準備下述表2所示之乙烯系共聚合體。 As the resin (B), an ethylene-based copolymer shown in Table 2 below was prepared.

Figure 108128323-A0101-12-0030-2
Figure 108128323-A0101-12-0030-2

表1及表2之菲卡軟化溫度係依據JIS K7206-1999所規定之A50法進行測定所得之值。 The Fica softening temperatures in Tables 1 and 2 are values measured based on the A50 method specified in JIS K7206-1999.

表2中之MFR(熔融流動速率)係依據JIS K7210-1999,於190℃、2160g負載下進行測定所得之值。 The MFR (melt flow rate) in Table 2 is a value measured at 190°C and a load of 2160g in accordance with JIS K7210-1999.

表2中之熔點係藉由DSC法進行測定所得之值。 The melting points in Table 2 are values measured by the DSC method.

3.樹脂(C) 3.Resin(C)

作為樹脂(C),準備離子聚合物1(IO-1)(與作為樹脂(A)所使用者相同)(參照上述表1)。 As the resin (C), ionomer 1 (IO-1) (the same as used as the resin (A)) was prepared (see Table 1 above).

(實施例1) (Example 1)

將表3所示之比例(質量%)之樹脂(A)及樹脂(B)乾摻。繼而,將乾摻之混合物投入至40mmΦ單軸擠出機之樹脂投入口,於模嘴溫度200℃下進行熔融混練,藉此獲得第1樹脂層用之樹脂組成物。 Dry blend resin (A) and resin (B) in the ratio (mass %) shown in Table 3. Then, the dry-blended mixture was put into the resin input port of a 40mmΦ single-screw extruder, and melt-kneaded at a die nozzle temperature of 200°C to obtain a resin composition for the first resin layer.

使用2種2層40mmΦT字模膜成形機將所獲得之第1樹脂層用之樹脂組成物、及第2樹脂層用之樹脂(C)投入至各自之擠出機,於加工溫度240℃之條件下成形,從而製作100μm厚之2種2層T字模膜。所製作之具有雙層構造之100μm厚之積層膜中之第1層與第2層之厚度比設為60/40。 Using two types of two-layer 40mmΦT-shaped mold film forming machines, the obtained resin composition for the first resin layer and the resin (C) for the second resin layer were put into their respective extruders, and the processing temperature was 240°C. Forming is carried out to produce two types of 2-layer T-shaped mold films with a thickness of 100 μm. The thickness ratio of the first layer and the second layer in the 100 μm-thick laminated film having a double-layer structure was set to 60/40.

(實施例2~8及12~14、比較例1~3、5及10) (Examples 2 to 8 and 12 to 14, Comparative Examples 1 to 3, 5 and 10)

將樹脂(A)與樹脂(B)之種類及量如表3或表4所示進行變更,除此以外,以與實施例1同樣之方式製作第1樹脂層用之樹脂組成物。繼而,將第1樹脂層及第2樹脂層之厚度如表3或表4所示進行變更,除此以外,以與實施例1同樣之方式製作包含第1樹脂層及第2樹脂層之積層膜。 The resin composition for the first resin layer was produced in the same manner as in Example 1 except that the types and amounts of resin (A) and resin (B) were changed as shown in Table 3 or Table 4. Next, except that the thicknesses of the first resin layer and the second resin layer were changed as shown in Table 3 or Table 4, a laminate including the first resin layer and the second resin layer was produced in the same manner as in Example 1. membrane.

(實施例9~11、比較例4及6~9) (Examples 9 to 11, Comparative Examples 4 and 6 to 9)

將樹脂(A)與樹脂(B)之種類及量如表3或表4所示進行變更,除此以外,以與實施例1同樣之方式製作第1樹脂層用之樹脂組成物。繼而,於不使用樹脂(C)之情況下,使用所製作之樹脂組成物, 以與實施例1同樣之方式製作100μm厚之1層T字模膜。 The resin composition for the first resin layer was produced in the same manner as in Example 1 except that the types and amounts of resin (A) and resin (B) were changed as shown in Table 3 or Table 4. Then, without using resin (C), the prepared resin composition is used, In the same manner as in Example 1, a layer of T-shaped mold film with a thickness of 100 μm was produced.

關於上述實施例及比較例中所獲得之第1樹脂層用之樹脂組成物及膜,藉由下述方法進行評價。評價結果示於表3或表4。 The resin composition and film for the first resin layer obtained in the above-mentioned Examples and Comparative Examples were evaluated by the following method. The evaluation results are shown in Table 3 or Table 4.

(1)樹脂組成物之中和度 (1) Neutralization degree of resin composition

中和度係根據樹脂(A)之中和度與其含量而計算。 The degree of neutralization is calculated based on the degree of neutralization of resin (A) and its content.

(2)樹脂組成物之MFR (2) MFR of resin composition

MFR係依據JIS K7210-1999,於190℃、2160g負載下進行測定。 MFR is measured in accordance with JIS K7210-1999 at 190°C and 2160g load.

(3)樹脂組成物之菲卡軟化溫度 (3) Fica softening temperature of resin composition

菲卡軟化溫度係依據JIS K7206-1999所規定之A50法進行測定。 Fika softening temperature is measured according to the A50 method specified in JIS K7206-1999.

(4)80℃收縮率 (4)Shrinkage rate at 80℃

將樹脂組成物於厚度100μm之膜上進行成形,切斷成寬度方向25mm×長度方向150mm,標記出間隔100mm之標線,而作為試片樣品。於玻璃板之上撒上用以防止膜附著之澱粉(Nikka股份有限公司製造,Nikkari powder),於其上放置試片樣品,於加壓成形機之加熱板上於80℃下加熱2分鐘。測定膜上之標線於加熱後之間隔,根據以下之式計算收縮率(%)。 The resin composition was formed on a film with a thickness of 100 μm, cut into a shape of 25 mm in the width direction × 150 mm in the length direction, and marked with marking lines at intervals of 100 mm to prepare a test piece sample. Starch to prevent film adhesion (Nikkari powder, manufactured by Nikka Co., Ltd.) was sprinkled on the glass plate, a test piece sample was placed on it, and it was heated at 80° C. for 2 minutes on the hot plate of the pressure molding machine. Measure the distance between the markings on the film after heating, and calculate the shrinkage (%) according to the following formula.

收縮率(%)=100mm-收縮後之標線之間隔距離(mm)/100 mm×100 Shrinkage rate (%)=100mm-distance between marking lines after shrinkage (mm)/100 mm×100

(5)拉伸試驗(模數) (5) Tensile test (modulus)

將切割膜基材裁斷成10mm寬之短條狀,而作為測定對象。依據JIS K7127,於試片:寬10mm×長200mm、夾具間隔:100mm之條件下,分別對測定對象之MD方向、TD方向各方向上之伸長距離25%及50%時之膜強度(25%模數及50%模數)進行測定。再者,試驗速度設為500mm/分鐘。 The cutting film base material was cut into short strips with a width of 10 mm and used as measurement objects. According to JIS K7127, under the conditions of test piece: width 10mm × length 200mm, clamp spacing: 100mm, the film strength (25%) is measured when the elongation distance in the MD direction and TD direction of the object is 25% and 50% respectively. Modulus and 50% modulus) are measured. Furthermore, the test speed is set to 500mm/min.

[表3]

Figure 108128323-A0101-12-0034-3
[table 3]
Figure 108128323-A0101-12-0034-3

[表4]

Figure 108128323-A0101-12-0035-4
[Table 4]
Figure 108128323-A0101-12-0035-4

關於使用含有乙烯-不飽和羧酸-不飽和羧酸酯共聚合體(三元共聚合體)之離子聚合物即樹脂(A)30質量份以上且90質量份以下及乙烯系共聚合體即樹脂(B)10質量份以上且70質量份以下、且菲卡軟化點未滿50℃之樹脂組成物所製作之實施例之切割膜基材,其熱(80℃)收縮性與強度兩者均優異。另一方面,使用二元共聚合體之離子聚合物所得之比較例1之樹脂組成物之菲卡軟化點超過50℃。使用此種樹脂組成物所製作之切割膜基材之熱收縮率較低。使用雖含有樹脂(A)與樹脂(B)、但菲卡軟化點超過50℃之比較例2及3之樹脂組成物所製作之切割膜基材亦與比較例1同樣地,熱收縮率較低。 Regarding the use of 30 parts by mass or more and 90 parts by mass or less of the resin (A) as an ionic polymer containing an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer (terpolymer) and the resin (B) as an ethylene-based copolymer ) 10 parts by mass or more and 70 parts by mass or less, and the resin composition having a Fica softening point of less than 50°C, the slit film base material of the example is excellent in both thermal (80°C) shrinkage and strength. On the other hand, the resin composition of Comparative Example 1 obtained using an ionic polymer of a binary copolymer had a Fica softening point exceeding 50°C. The thermal shrinkage rate of the cutting film base material produced using this resin composition is low. The dicing film base materials produced using the resin compositions of Comparative Examples 2 and 3, which contain resin (A) and resin (B) but have a Ficar softening point exceeding 50°C, also have a lower thermal shrinkage rate as in Comparative Example 1. Low.

使用含有70質量份以上且90質量份以下之樹脂(A)及30質量份以上且10質量份以下之樹脂(B)、且菲卡軟化點未滿50℃之樹脂組成物所獲得之實施例9~11之切割膜基材雖為單層,但同時發揮充分之強度與熱收縮性。 Example obtained using a resin composition containing 70 to 90 parts by mass of resin (A) and 30 to 10 parts by mass of resin (B), and having a Fica softening point of less than 50°C. Although the cutting film base material of 9~11 is a single layer, it exhibits sufficient strength and heat shrinkability at the same time.

含有超過90質量份之量之樹脂(A)及未滿10質量份之樹脂(B)之比較例4及5之樹脂組成物之菲卡軟化點超過50℃。使用此種樹脂組成物所製作之切割膜基材雖強度較高,但熱收縮率較低。同樣地,使用離子聚合物作為第1樹脂層之比較例6~10之切割膜基材亦雖顯示較高之強度,但熱收縮率較低。特別是比較例7中所使用之離子聚合物2雖菲卡軟化點未滿50℃,但熱收縮率較低。 The resin compositions of Comparative Examples 4 and 5 containing more than 90 parts by mass of the resin (A) and less than 10 parts by mass of the resin (B) have a Fica softening point exceeding 50°C. Although the cutting film base material produced using this resin composition has high strength, it has a low thermal shrinkage rate. Similarly, although the dicing film base materials of Comparative Examples 6 to 10 using ionomers as the first resin layer also showed higher strength, their thermal shrinkage rates were lower. In particular, the ionic polymer 2 used in Comparative Example 7 has a low thermal shrinkage rate even though the Fica softening point is less than 50°C.

根據該等結果可知,為了獲得兼具較高強度與較高熱收縮率之切割膜基材,重要的是成為原料之樹脂組成物中之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物即樹脂(A)之含量 為30質量份以上且90質量份以下,乙烯系共聚合體即樹脂(B)之含量為10質量份以上且70質量份以下,且菲卡軟化點未滿50℃。 From these results, it can be seen that in order to obtain a dicing film base material that has both high strength and high thermal shrinkage, it is important to use the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer in the resin composition as the raw material. Content of ionic polymer (resin (A)) It is 30 parts by mass or more and 90 parts by mass or less, the content of the resin (B) which is a vinyl copolymer is 10 parts by mass or more and 70 parts by mass or less, and the Fika softening point is less than 50°C.

本申請案主張基於2018年8月8日申請之日本專利特願2018-149562之優先權。該申請說明書所記載之內容全部被引用至本案說明書。 This application claims priority based on Japanese Patent Application No. 2018-149562, which was filed on August 8, 2018. All contents recorded in the application specification are quoted in the specification of this case.

(產業上之可利用性) (industrial availability)

本發明之切割膜可較佳地用於不僅實施將半導體晶圓分割成晶片單元之切割步驟與擴張步驟、且實施熱收縮步驟之半導體元件之製造方法。特別是本發明之切割膜由於兼具較高強度與較高熱收縮性,故而可較佳地用於採用在擴張步驟中對切割膜施加比習知法(刀片切割法或雷射剝蝕法等)大之應力之隱形切割(註冊商標)法之製造方法。藉由使用本發明之切割膜,能夠使分割後之晶片之間隔變得均勻,減少其後之步驟中之製品不良,從而可以較高之產率製造半導體裝置。 The dicing film of the present invention can be preferably used in a manufacturing method of a semiconductor element that performs not only the dicing step and the expanding step of dividing the semiconductor wafer into wafer units, but also the heat shrinking step. In particular, since the dicing film of the present invention has both high strength and high thermal shrinkage, it can be preferably used to apply a method to the dicing film in the expansion step than conventional methods (blade cutting method or laser ablation method, etc.) A manufacturing method using invisible cutting (registered trademark) method for high stress. By using the dicing film of the present invention, the distance between divided wafers can be made uniform, product defects in subsequent steps can be reduced, and semiconductor devices can be manufactured at a higher yield.

1‧‧‧第1樹脂層 1‧‧‧The 1st resin layer

2‧‧‧第2樹脂層 2‧‧‧The second resin layer

10‧‧‧切割膜基材 10‧‧‧Cutting film substrate

Claims (9)

一種切割膜基材用樹脂組成物,其含有:乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下、及乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份),且上述乙烯系共聚合體(B)係JIS K7206-1999所規定之菲卡軟化點為41℃以下之樹脂、或不具有上述菲卡軟化點之樹脂;上述切割膜基材用樹脂組成物之JIS K7206-1999所規定之菲卡軟化點未滿50℃。 A resin composition for cutting film base materials, which contains: 30 to 90 parts by mass of an ionic polymer (A) of an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer, and an ethylene-based copolymer (A) B) 10 parts by mass or more and 70 parts by mass or less (where the total of component (A) and component (B) is 100 parts by mass), and the above-mentioned ethylene-based copolymer (B) is specified in JIS K7206-1999 The resin has a FICA softening point of 41°C or lower, or a resin that does not have the above FICA softening point; the FICA softening point specified in JIS K7206-1999 for the above-mentioned resin composition for cutting film substrates is less than 50°C. 如請求項1之切割膜基材用樹脂組成物,其中,上述乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)之JIS K7206-1999所規定之菲卡軟化點為25℃以上且60℃以下。 The resin composition for a dicing film base material according to claim 1, wherein the ionic polymer (A) of the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer has a FICA softening point specified in JIS K7206-1999 It is above 25℃ and below 60℃. 如請求項1之切割膜基材用樹脂組成物,其中,上述乙烯系共聚合體(B)係自乙烯-α-烯烴共聚合體及乙烯-不飽和羧酸酯共聚合體所構成之群組選擇之至少一種。 The resin composition for dicing film substrates according to claim 1, wherein the ethylene copolymer (B) is selected from the group consisting of ethylene-α-olefin copolymer and ethylene-unsaturated carboxylate copolymer. At least one. 如請求項1之切割膜基材用樹脂組成物,其中,藉由依據JIS K7210-1999之方法於190℃、負載2160g下所測定之上述乙烯系共聚合體(B)之熔融流動速率(MFR)為0.2g/10分鐘~30.0g/10分鐘。 The resin composition for a dicing film base material according to claim 1, wherein the melt flow rate (MFR) of the ethylene-based copolymer (B) is measured at 190° C. and a load of 2160 g according to the method of JIS K7210-1999. It is 0.2g/10 minutes~30.0g/10 minutes. 如請求項1之切割膜基材用樹脂組成物,其中,藉由依據JIS K7210-1999之方法於190℃、負載2160g下所測定之上述切割膜基材用樹脂組成物之熔融流動速率(MFR)為0.1g/10分鐘~50g/10分鐘。 The resin composition for dicing film base materials according to Claim 1, wherein the melt flow rate (MFR) of the resin composition for dicing film base materials is measured at 190°C and a load of 2160 g according to the method of JIS K7210-1999. ) is 0.1g/10 minutes ~ 50g/10 minutes. 一種切割膜基材,其含有至少一層包含請求項1之切割膜基材用樹脂組成物之層。 A dicing film base material containing at least one layer containing the resin composition for dicing film base materials of claim 1. 如請求項6之切割膜基材,其含有:包含請求項1之切割膜基材用樹脂組成物之第1樹脂層、及積層於上述第1樹脂層之包含樹脂(C)之第2樹脂層。 The dicing film base material of Claim 6, which contains: a first resin layer containing the resin composition for the dicing film base material of Claim 1, and a second resin containing resin (C) laminated on the first resin layer. layer. 如請求項7之切割膜基材,其中,上述樹脂(C)係自乙烯-不飽和羧酸系共聚合體及上述乙烯-不飽和羧酸系共聚合體之離子聚合物所構成之群組選擇之至少1種。 The cutting film base material of claim 7, wherein the resin (C) is selected from the group consisting of an ethylene-unsaturated carboxylic acid copolymer and an ionic polymer of the ethylene-unsaturated carboxylic acid copolymer. At least 1 species. 一種切割膜,其特徵在於具有:請求項6至8中任一項之切割膜基材、及積層於上述切割膜基材之至少一面之黏著層。 A dicing film characterized by having: the dicing film base material according to any one of claims 6 to 8; and an adhesive layer laminated on at least one side of the dicing film base material.
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