201202382 六、發明說明： 【發明所屬之技術領域】 本發明係關於-種當藉由延伸而沿著晶片 層時使用的可延伸之晶圓加工用帶 者劑 【先前技術】 於ic等半導體裝置之製造步驟中實施如 使電路圖案形成後之晶圓薄膜化而研削晶圓背面-了 磨步驟；於半導體晶圓之背面貼附有具有點著性及伸2 之晶圓加工用帶之後’以晶片為單位分割晶圓… 驟，延伸晶圓加工用帶之步驟；拾取經 v "口j <日日片之步驟， 進而將所拾取之晶片接著於引線框架或封裝基板等‘， 者，於堆疊封裝+，將半導體晶片彼 ’或 (貼片，一）步驟。 *者之黏晶 上述背面研磨步驟中，為了保護晶圓之電路圖案 面（晶圓表面）免受污染’而使用表面保護帶。晶圓： 面研削結束之後，於將該表面保護帶自晶圓表面剝離時， 將以下描述之晶圓加工用帶（切割黏晶帶）貼合於晶圓背 面之後’將切割黏晶帶側固定於吸附台上，對表面保 實施使對晶圓之接著力下降之處理之後，剝離表面保護 帶。之後、剝離表面保護帶後之晶圓係於背面貼合有切割 黏晶帶之狀態下自吸附台抬起，提供給下一切割步驟。另 外，上述之所謂使接著力下降之處理係#，當纟面保護帶 由紫外線等能量線硬化性成分所構成之情形時以紫外線照 射處理，當表面保護帶由熱硬化性成分所構成之情形時二 201202382 熱照射（加熱）處理。 上述背面研磨步驟後之切割步驟至安裝步驟中，使用 有基材膜上依序積層有黏著劑層及接著劑層之切割黏a 帶。一般而言，當使用切割黏晶帶之情形時，首先，於半 導體晶圓之背面貼附切割黏晶帶之接著劑層，從而將半導 體晶圓固定’且使用切割刀片對半導體晶圓及接著劑層以 晶片為單位進行切割。之後實施延伸步驟，即，使帶於半 導體晶圓之徑向延伸，藉此擴大晶片彼此間之間隔。實施 該延伸步驟之目的在於··於之後的拾取步驟中，提高 相機等對晶片之識別性，並且防止拾取晶片時因鄰接之晶 片彼此接觸而導致晶片破損。之後，於拾取步驟中，晶片 係與接著劑層一同自黏著劑層剝離而被拾取，且於安裝步 驟中，直接接著於引線框架或封裝基板等上。如此，藉由 使用切割黏晶帶，能夠將附有接著劑層之晶片直接接著於 引線框架或封裝基板等1’因此，可省略接著劑之塗佈步 驟或另外將黏晶膜接著於各晶片上之步驟。 因如上所述使用切割刀片對201202382 VI. Description of the Invention: [Technical Field] The present invention relates to an extendable wafer processing agent used when extending along a wafer layer by extension [Prior Art] A semiconductor device such as ic In the manufacturing step, the wafer is formed by thinning the wafer after the circuit pattern is formed, and the wafer is back-grinded; after the wafer processing tape having the puncture and the extension 2 is attached to the back surface of the semiconductor wafer. Dividing the wafer in units of wafers... Steps of extending the wafer processing tape; picking up the steps of v "mouth j <day film, and then attaching the picked wafer to the lead frame or package substrate, etc.' In the stack package +, the semiconductor wafer is either a (patch, one) step. *Current crystals In the above back grinding step, a surface protection tape is used in order to protect the circuit pattern surface (wafer surface) of the wafer from contamination. Wafer: After the surface is ground, when the surface protection tape is peeled off from the wafer surface, the wafer processing tape (cutting die bond tape) described below is attached to the back surface of the wafer. After being fixed on the adsorption stage and performing surface treatment to reduce the adhesion force to the wafer, the surface protection tape is peeled off. Thereafter, the wafer after the surface protective tape is peeled off is lifted from the adsorption stage in a state where the back surface is bonded with the dicing die bond, and is supplied to the next cutting step. In addition, in the case where the surface protection tape is composed of an energy ray-curable component such as ultraviolet rays, the surface protection tape is composed of a thermosetting component. Time two 201202382 heat irradiation (heating) treatment. In the cutting step to the mounting step after the back grinding step, a cut adhesive layer in which an adhesive layer and an adhesive layer are sequentially laminated on the substrate film is used. In general, when a dicing die bond is used, first, an adhesive layer of a dicing die bond tape is attached to the back side of the semiconductor wafer to fix the semiconductor wafer and use a dicing blade to the semiconductor wafer and then The agent layer is cut in units of wafers. An extension step is then performed, i.e., extending radially across the semiconductor wafer, thereby expanding the spacing of the wafers from one another. The purpose of the extension step is to improve the visibility of the wafer by the camera or the like in the subsequent pickup step, and to prevent the wafer from being damaged by the contact of the adjacent wafers when the wafer is picked up. Thereafter, in the pickup step, the wafer is peeled off from the adhesive layer together with the adhesive layer to be picked up, and is directly attached to the lead frame or the package substrate or the like in the mounting step. Thus, by using the dicing die bond, the wafer with the adhesive layer can be directly attached to the lead frame or the package substrate, etc. Therefore, the application step of the adhesive can be omitted or the die bond film can be attached to each wafer. The steps above. Using a cutting blade pair as described above
之時，晶片彼此會黏在_ 起導致產生拾取不良等，從而半 導體裝置之製造良率下降。 然而，上述切割步驟中， 半導體晶圓及接著劑層一併钱 晶圓之切削屑，亦會產+垃3 卜方法：於切割步驟中僅 ’於延伸步驟中，藉由使 為了解決上述問題，提出如下方法· 對半導體晶圓利用到刀進行切割，也 201202382 切割黏晶帶延伸而對應於各個晶片分割接著劑層（例如， 專利文獻1之[0055]〜[0056])。藉由如此之利用延伸時2張 力之分割接著劑層之方法，接著劑不會產生切削屑，拾取 步驟中不會產生不良影響β σ 並且，近年來，半導體晶圓之切斷方法，提出使用雷 射加工裝置且能夠以非接觸之方式切斷晶圓之所謂隱形切 割法（stealth dicing)。 例如，專利文獻2中，隱形切割法，揭示有具備如下 步驟之半導體基板之切斷方法：於經由黏晶樹脂層（接著 劑層）而貼附有片材之半導體基板的内部，對準焦點光照 十雷射光’藉!’於半導體基板之内部形成因多光子吸收 而產生之改質區域’且於該改質區域形成預定切斷部；以 及’使片材擴展（延伸）’藉此沿著狀切斷部切斷半導體 基板及黏晶樹脂層。 而且，使肖雷射加工裝置切斷半導體晶圓之另一種方 法’例如，專利文獻3中提出—種半導體晶圓之分割方法， 其包括如下步驟：於半導體晶圓之背面安裝黏晶用之接著 膜（接著劑層於背面安裝有該接著膜之半導體晶圓之接 、[丨貝占附可伸展之保護黏著帶；自貼附有保護黏著帶 :二導體晶圓之表面，沿著路線（stree〇照射雷射光線， 刀::成各個半導體晶片；使保護黏著帶擴展（延伸）， 者膜賦^拉伸力’且對應於各個半導體晶片而斷裂 帶脫離：使貼附有斷裂之接著膜之半導體晶片自保護黏著 5 201202382 藉由β亥專專利文獻2及專利文獻3中記載之半導體晶 圆之切斷方法，利用雷射光之照射及帶之延伸，而以非接 觸之方式切斷半導體晶圓，故而，對於半導體晶圓之物理 陡負載較小’可切斷半導體晶圓，而不會出現如採用目前 主流之刀刀切割法（blade dicing)時產生的晶圓之切削屑（碎 屬）。而且，藉由延伸而對接著劑層進行分割，故而，接著 劑層不會產生切削屑。因士卜，狀皮At & 月】角U此作為能代替刀刃切割法之優 良技術而受到關注。 當如上述專利文獻丨〜3中之記載所述之於藉由延伸分 二妾者劑層之情形時，為了於使用之切割黏晶帶，沿著半 導體晶片確實地分割接著劑層，要求基材膜具有均 向性之擴展性。其原因在於，當於基材膜局部產 充分之部位之情形時，於兮邻 '展不 接者㈣，變得無法將接著劑層分割。 於 -般而言’可知’於將基材膜擠出成形 力，且產生疯鐵廡，/ 割黏晶帶受到異向性之 基材膜之擴展性變得不均勾且變Α 異：性。因此，目前為止提出多種方案作為 2為 展性之切判點s總,& , 3句之擴 ⑽曰曰帶（例如，參照專利文獻4〜9)。 而且，上述延伸之後， 穩定地保持各個晶片之^ ί帶產生4他’故而，無法 二:導致接著劑層之再點接。為了解決該問題，二， 法：使用加熱收縮性帶作為上述帶，於上述八*出如Τ 後加熱帶且使其緊繃 刀J步驟之 保持“之間的間隔（例如，參照 201202382 上述加熱收縮性帶，理想的是聚氣乙烯 專利文獻10、11 )。At this time, the wafers adhere to each other to cause pick-up failure and the like, and the manufacturing yield of the semiconductor device is lowered. However, in the above cutting step, the semiconductor wafer and the adhesive layer of the wafer of the same wafer will also be produced by the method: in the cutting step, only in the extending step, by solving the above problem The following method is proposed: The semiconductor wafer is cut by a knife, and the 201202382 dicing adhesive tape is extended to correspond to each wafer division adhesive layer (for example, [0055] to [0056] of Patent Document 1). By using the method of dividing the adhesive layer by the tension at the time of stretching, the adhesive does not generate chips, and the adverse effect β σ does not occur in the pickup step. In recent years, the semiconductor wafer cutting method has been proposed. The so-called stealth dicing of the laser processing apparatus and capable of cutting the wafer in a non-contact manner. For example, in the patent document 2, the stealth dicing method discloses a method of cutting a semiconductor substrate having a step of aligning a focus of a semiconductor substrate to which a sheet is attached via a die bond resin layer (adhesive layer). Light ten-ray light 'borrow!' forms a modified region generated by multiphoton absorption inside the semiconductor substrate and forms a predetermined cut portion in the modified region; and 'extends the sheet (extends)' The cut portion cuts the semiconductor substrate and the die-bonding resin layer. Further, another method of cutting a semiconductor wafer by a Shaw laser processing apparatus is described, for example, in Patent Document 3, a method of dividing a semiconductor wafer, comprising the steps of: mounting a die bond on a back surface of a semiconductor wafer; Next, the film (the adhesive layer is attached to the semiconductor wafer on which the bonding film is mounted on the back side, [the mussel occupies the stretchable protective adhesive tape; the self-adhesive protective adhesive tape: the surface of the two-conductor wafer, along the route (stree 〇 irradiates the laser light, the knives: into individual semiconductor wafers; the protective adhesive tape is extended (extended), and the film is stretched and corresponds to each semiconductor wafer and the fracture tape is detached: the affixed is broken Next, the semiconductor wafer of the film is self-protectively adhered to the semiconductor wafer 5 201202382 by the method of cutting the semiconductor wafer described in Patent Application No. 2 and Patent Document 3, and is irradiated in a non-contact manner by irradiation of laser light and extension of the tape. Breaking the semiconductor wafer, so the physical steep load on the semiconductor wafer is small' can cut the semiconductor wafer without the use of the current mainstream knife cutting method (blade dic The chips (chips) of the wafer generated at the time of ing). Moreover, the adhesive layer is divided by the extension, so that the adhesive layer does not generate chips. Ins, skins At & The angle U is attracting attention as an excellent technique that can replace the blade cutting method. When the method of extending the two-layer layer is described in the above-mentioned Patent Documents 丨 to 3, the cutting adhesive is used for use. The crystal ribbon, which reliably separates the adhesive layer along the semiconductor wafer, requires the substrate film to have an extension of the uniformity. The reason is that when the substrate film is partially produced in a sufficient portion, (4), it becomes impossible to divide the adhesive layer. In general, it is known that the base film is extruded into a forming force, and a mad iron crucible is produced, and the dicing film is subjected to an anisotropic substrate film. The scalability has become uneven and different: Sexuality. Therefore, a variety of schemes have been proposed so far as a continuation of the 2 stipulations, & 3 extensions (10) 曰曰 (for example, reference patents) Documents 4 to 9). Moreover, after the above extension, each of them is stably maintained. The film of the ^ ί belt produces 4 he's not, and can not be two: lead to the re-attachment of the adhesive layer. In order to solve this problem, two, the method: the use of heat shrinkable tape as the above belt, after the above eight * out of the In the tropics, the interval between the tightening knives J is maintained (for example, refer to 201202382 above-mentioned heat shrinkable tape, desirably polyethylene gas patent documents 10, 11).
或其類似物即氣化芳香族烴，從而會對環境帶來負擔 [專利文獻1]日本特開2007_ 5530號公報 [專利文獻2]日本特開2〇〇3 _ 338467號公報 [專利文獻3]日本特開2〇〇4— 273895號公報 [專利文獻4]日本特開平6一 134941號公報 [專利文獻5]日本特開平丨丨—19984〇號公報 [專利文獻6]日本特開2000— 273416號公報 [專利文獻7 ]曰本特開2 〇 〇 1 — 11 2 〇 7號公報 [專利文獻8]曰本特開2〇〇3_ 158〇98號公報 [專利文獻9]日本特開2009— 23 1699號公報 [專利文獻1〇]日本特開2002— 334852號公報 [專利文獻U]日本特開2007— 27562號公報In the case of the gasification of the aromatic hydrocarbons, it is a burden on the environment. [Patent Document 1] JP-A-2007-5530 [Patent Document 2] JP-A-2002-3-338467 [Patent Document 3] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 - Japanese Patent Laid-Open Publication No. JP-A No. 2002-277852 (Patent Document U)
而產生破損，或者接著劑層彼此接觸 半導體零件製造步驟之良率惡化。 7 201202382 用於：：月之目的在於提供一種晶圓加工用帶’其具有適 用於藉由延伸而分割接著劑層之步驟的均句擴展性，並且 於:熱收縮步驟中表現出充分之收縮性’於加熱收縮步驟 之後不會因鬆弛而產生不良狀況。 為了解決以上問題，太表 延伸而沿著晶片"接著㈣# 態樣係-種當藉由 刀。]接者劑層時使用的可延伸之晶圓加工 ηΐ特徵在於：具有基材膜、及設於上述基材臈上之 -者1 ，上述基材膜係由以JISK7206規定之維卡軟化點 請以上且未達㈣之熱塑性交聯樹脂構成，且因熱收 產生之應力之辦士 & ΟΑ 樣之特微兔，θ、· 以上。而且’本發明之第2態 ·’·’，於上述黏著劑層上積層有接著劑層。 根據第1及第2態樣之晶圓加工用帶，基材膜由維卡 人化點為5G C以上且未達9Qt之熱塑性交聯樹脂構成’ 因熱收縮產生之廄+ + Μ ^ 曰大為9Mpa以上’故而，可成為罝 有適用於藉由延伸分割接著劑層之步驟的均勻擴展、 於加熱收縮步驟中表現出亦八 ' , 見出充刀之收縮性、於加熱收縮步驟 之後不會因鬆弛而引起不良狀況的晶圓加工用帶。 亦即，非交聯樹脂中之分子鏈係配向於加工方向而 擴展性成為異向性，作σ — 仁/、要刀子鏈之間交聯，則擴展性進 梦成為等向性，亦可較佳地用於接著劑層分割用之延伸 ，驟中而且，當賦予由交聯樹脂構成之膜一定程度以 2拉伸應變之情形時，非交聯部分崩潰，而於交聯點保存 〜力，故而，若因加熱而使非交聯部分軟化，則藉由保 於交聯點之應力對基材膜施加恢復力。一般而言’延伸步 8 201202382 驟中晶圓加工用帶之擴展率4 10%左右，但當將Η)%之拉 伸應變施加於聚乙烯等由普通的非交聯樹脂構成之膜時， 會崩潰’即便加熱亦幾乎不會恢復，但若為交聯樹脂之膜， 則藉由加熱至軟化點附近或者其以上之溫度，彳容易收縮 而恢復。 而且，一般而言，於上述延伸步驟後之加熱步驟中， 使用溫風鼓風機等進行加熱，使晶圓加工用帶之溫度達到 50 C〜90 C之程度’因此，該晶圓加工用帶之基材膜樹脂 適合為以JIS Κ7206規定之維卡軟化點為5〇χ：以上且未連 9〇 C者’更佳為5(rc以上且未達_者。另外，若維卡軟 化點過低，則上述加熱收縮時樹脂會過度軟化且流體化， 故而不佳。若加熱收縮步驟中晶圓加工用帶之基材流體 化’則晶圓加卫用帶會料。因&，適當的維卡軟化點之 下限為50。(：左右。闵α μ夕丄 因以上之理由，將維卡軟化點為50。(：以 上且未達90Χ：之熱塑性交聯樹脂心基材膜，則可成為具 有適用於藉由延伸而分割接著劑層之步驟的均勻擴展性了 且於加熱I缩步驟中表現出充分之收縮性的晶圓加工用 帶0 並且，若非下述晶圓加工用帶，則不容易充分消除延 申步驟中產生之晶圓加工用帶之鬆弛，該晶圓加工用帶 係：當施加對應於普通的延伸步驟中之晶圓加工用帶擴展 =G /°左右的拉伸之後，藉由加熱使收縮應力增大至— ，私度以上。右無法充分消除鬆弛，則無法將分割之後 半導體晶片及已分離之接著劑穩定地固定於晶圓加工用帶 9 201202382 上’鄰接晶片彼此接觸而產生破損，哎接 a楼者劑層彼此接觸 而再黏接，從而導致半導體零件製造步驟之良率惡化 就加熱收縮時作用於晶圓加工用帶之：力：：： 言，利用依據JIS K7162戶斤決定之方法，賦予上述晶圓加工 用帶之試驗片10%之拉伸應變之後’將夾頭間之距離保持 為一定，於此狀態下，進行加熱直至該試驗片之溫度達到 70°C為止的過程、將該試驗片保持於7〇t之溫度i分鐘之 過程、及之後將該試驗片返回至室溫之過程中，該試驗片 之最大熱收縮應力較佳為比剛要開始加熱之前的初始應力 大9MPa以上，更佳為刪pa以上。當採用使用有^因 熱收縮產生之應力之增大未彡9MPa的基材膜之晶圓加工 用帶之情形時，因半導體晶圓或晶圓加工用帶之本身重量 而產生之擴展應力與收縮應力相抵，&而，即便藉由加熱 亦無法充分地消除鬆弛。因以上理由，可成為如下之晶圓 加工用帶，其藉由將因熱收縮產生之應力之增大為以 上之熱塑性交聯樹脂用於基材膜，使得加熱收縮步驟之後 不會因鬆弛而產生不良狀況。 如上述第1或第2態樣之晶圓加工用帶，本發明之第3 態樣之特徵在於，上述熱塑性交聯樹脂係由乙烯〜（曱基） 丙烯酸二元共聚物或者乙烯一（甲基）丙烯酸一（曱基）丙烯酸 烷基酯二TL共聚物以金屬離子交聯而成之離子聚合物樹 脂。 如上述第1或第2態樣之晶圓加工用帶，本發明之第4 態樣之特徵在於，上述熱塑性交聯樹脂係藉由電子束照射 10 201202382 而使低密度聚乙烯或者 飞者超低畨度聚乙烯交聯而成者。 如上述第1或第7能 ^ ^ 〜、樣之晶圓加工用帶，本發明之第5 態樣之特徵在於，μ .+、i u '上述熱塑性交聯樹脂係藉由電子束照射 而使乙婦—乙酸乙稀賴共聚物交聯而成者。 如上述第卜第2、第3、第4或第 用帶’本發明之第6態樣之特徵在於， 脂之氯原子之含量未達丨質量％。 5態樣之晶圓加工 上述熱塑性交聯樹 …根據帛3至第5態樣之晶圓加工用帶，因分子鏈之構 成早位中不含氯，&而，可提供能夠解決上述問題、且環 1兄負擔低的晶圓加工用帶。 〇上述第2、第3、第4、第5或第6態樣之晶圓加工 用帶’本發明之第7態樣之特徵在於，上述晶圓加工用帶 係使用於包括如下步驟之半導體裝置之製造方法，係： (a)於形成有電路圖案之半導體晶圓表面貼合表 護帶； (b )研削上述半導體晶圓背面之背面研磨步驟； (c )於已將半導體晶圓加熱至70°C〜80°C之狀熊下， 在上述半導體晶圓之背面貼合上述晶圓加工用帶之接著劑 層； (d )自上述半導體晶圓表面剝離表面保護帶； (e)對上述半導體晶圓之預定分割部分照射雷射光， 從而於該晶圓之内部形成因多光子吸收而產生之改質區 域； 。。 (f)延伸上述晶圓加工用帶，藉此’沿著分割線分割 201202382 述半導體sa m及上述接著劑層，從 劑層之多個半導體晶片； 獲㈣有上述接者 之二對Λ述晶圓加工用帶之不與上述半導趙晶片重* 劑層帶之㈣縣，拾取时上述接著 用：：t第2、第3、第4、第5或第6態樣之晶圓加工 用帶，本發明之第8態樣之特徵在於 , 上述晶圓加工用帶 糸使用於匕括如下步驟之半導體裝置之製 ⑴於形成有電路圖案之半導體晶圓表面貼合表面保 δ隻带， ⑴研削上述半導體晶圓背面之背面研磨步驟； (c )於已將半導體晶圓加熱至7〇。。〜8〇。。之狀能下， 在上述半導體晶圓之背面貼合上述晶圓加工用帶之接著劑 層， (d )自上述半導體晶圓表面剝離表面保護帶； (e )自上述半導體晶圓之表面沿著分割線照射雷射 光，分割成各個半導體晶片； ，（f)藉由延伸上述晶圓加工用帶，對應於每一個上述 半導體晶片而分割上述接著劑戶 4伐^•則層，從而獲得附有上述接著 劑層之多個半導體晶片； (g )對上述晶圓加工用 之部分進行加熱而使其收縮 帶之不與上述半導體晶片重疊 ，藉此消除上述延伸步驟中產 12 201202382 生之鬆弛’保持該半導體晶片之間隔；及 (h)自晶圓加工用帶之黏著劑層，拾取附有上述接著 劑層之上述半導體晶片。 如上述第2'第3、第4、第5或第6態樣之晶圓加工 用帶，本發明之第9態樣之特徵在於，上述晶圓加工用帶 係使用於包括如下步驟之半導體裝置之製造方法，係： ▲於形成有電路圖案之半導體晶圓表面貼合表面保 護帶； ⑴研削上述半導體晶圓背面之背面研磨步驟； (c )於已將半導體晶圓加熱至7Qt〜阶之狀離下， 在上述半導體晶圓之背面貼合上述晶圓加工用帶之^著劑 層； (d )自上述半導體晶圓表面剝離表面保護帶； 〃（）使用切割刀片沿著分割線切削上述半導體晶圓， 從而分割成各個半導體晶片； (〇藉由延伸上述晶圓加工 本填栌曰用咿對應於母一個上述 牛導體日日片而分割上述接著劑 劑層之多個半導體晶片； ❹獲得附有上述接著 (g) 對上述晶圓加工用帶之不與上 之部分進行加熱而使1 导S片重且 八縮藉此消除上述延伸步驟中產 生之鬆弛，保持該半導體晶片之間隔；及 (h) 自晶圓加工用帶之黏著劑層，拾取附有上 劑層之上述半導體晶片。 如上述第2、篦3、铱^ Λ* 第、第5或第ό態樣之晶圓加工 13 201202382 用帶，本發明之第10態樣之特徵在於，上述晶圓加工用帶 係使用於包括如下步驟之半導體裝置之製造方法，係： (a )使用切割刀片’沿著分割線預定線對形成有電路 圖案之半導體晶圓進行切削至未達晶圓厚度之深度； (b)於上述半導體晶圓表面上貼合表面保護帶； (c )研削上述半導體晶圓背面而分割成各個半導體晶 片之背面研磨步驟； aa 70°C〜80°C之狀態下， 晶圓加工用帶之接著劑 (d )於已將半導體晶圓加熱至 在上述半導體晶片之背面貼合上述 層； e 上述半導體晶圓表面剝離表面保護帶； ⑺藉由延伸上述晶圓加工用冑，對應於每一個上 半導體晶片而分割上述接著劑層，從而獲得附有上述接 劑層之多個半導體晶片； 寸有上述接 (g\對上述晶圓加工用帶之不與上述半導體晶片重 之部分進行加熱而使其收縮’藉此消除上述延伸步驟中 生之鬆弛，保持該半導體晶片之間隔；及 (h )自晶圆加工用帶之勤英泡丨思 常之黏者劑層，拾取附有上述接」 劑層之上述半導體晶片。 。"：：=晶圓加工用帶中，基材膜由維卡軟化點為5 生之庳力之熱塑性交聯樹脂構成，且因熱收㈣ 用帶了其且二 a以上’故而可成為如下之晶_ 用帶#具有適用於藉由延伸分 H a 刀接者劑層的步驟之均 於加熱收縮步驟中表現出充分之收縮性， 14 201202382 於加熱收縮步驟之後不會因鬆弛而產生不良狀況。 亦即，因係維卡軟化點為50°C以上且未達90°C之熱塑 性交聯樹脂，故可成為具有適用於藉由延伸而分割接著劑 層的步驟之均勻擴展性、並且於加熱收縮步驟中表現出充 分之收縮性的晶圓加工用帶。而且，因熱收縮產生之應力 之増大為9MPa以上，故可成為於加熱收縮步驟之後不會因 鬆弛而產生不良狀況之晶圓加工用帶。 【實施方式】 以下’參照圖式對本發明之實施形態進行詳細說明。 圖1係表示於本發明之實施形態之晶圓加工用帶1〇貼 s有半導體晶圓W的狀態之剖面圖。於半導體晶圓w之電 路圖案形成面（晶圓表面），利用研削晶圓背面之背面研磨 步驟’貼合用於保護電路圖案之表面保護帶14。而且，於 半導體晶圓W之背面貼合晶圓加工用帶丨〇。本發明之晶圓 加工用帶10係’當藉由延伸而沿著晶片分割接著劑層1 3 時使用之可延伸的帶。該晶圓加工用帶1 〇具有基材膜1.1、 5又於基材膜11上之黏著劑層12、及設於黏著劑層12上之 才矣著齊彳層1 3 ’且接著劑層13貼合於半導體晶圓W之背面。 另外’各個層亦可配合使用步驟或裝置而預先切斷（預切 割）成指定形狀。進而，本發明之晶圓加工用帶包括下述 態·對應於每1塊晶圓進行切斷之形態、及將形成有多 個°玄曰曰圓加工用帶之長形片材捲繞成輥狀之形態》以下， 對各層之構成進行說明。 <基材膜> 15 201202382 基材膜11係由依據JIS K7206所規定之維卡軟化點為 5〇°C以上且未達90t之熱塑性交聯樹脂構成。藉由使用具 有如此構成之基材膜n，可實現能夠使用於分割接著劑層 13之延伸步驟中之具有均勻且等向性之擴展性的晶圓加工 用帶1 0。而且，與非交聯樹脂相比，交聯樹脂對於拉伸之 恢復力較大，因此，於延伸步驟後之拉伸狀態下進行加熱 而使該樹脂軟化時的收縮應力較大，可藉由加熱收縮而消 除延伸步驟後帶所產生之鬆他，且能使帶緊端而穩定地保 持各個半導體晶片之間⑮。另外，一般而言，於延伸步驟 後之加熱步驟中，帶之溫度為50t〜9(rc之程度，故而， 若軟化點過度高於該範圍則難以充分消除鬆弛，相反，若 軟化點過低則有帶，熔斷之危險。 上述熱塑性交聯樹脂，只要為依據JIS K7206所規定之 維卡軟化點為5(rc以上且未達9Gt者，，㈣限制；# 乙烯-（甲基）丙烯酸二元共聚物或者乙稀曱基）丙稀酸_ (甲基）丙稀酸以金屬科進行交聯而成之離子聚合物樹 脂，於均勾擴展性方面適用於延伸步驟，且因交聯而使得 加熱時具有較強之恢復力，财面亦特別適用於消除延伸 步驟中產生之帶之鬆弛的步驟。而且，上述離子聚合物樹 脂之分子鏈之構成中不含氣，故而，即便使用後對多餘之 帶進行焚燒處，里，亦不會產生戴奥辛或其類似物即氣化芳 香族烴…環境負擔亦較小。上述離子聚合物樹脂中所 含之金屬離子可為任一冑’但尤其是鋅離子由於其溶出 性較低，故特別是由低污染性方面而言較佳。 、/ 16 201202382 上述熱塑性交聯樹脂，除了上述離子聚合物樹脂之 外，對比重為0.910以上〜未達〇 93()之低密度聚乙稀或者 比重未達G.91G之超低密度聚乙稀照射電子束而使其交聯 亦較適且。該熱塑性交聯樹脂，因交聯部位與非交 聯部位共存於樹脂中，故具有一定之均勻擴展性，因此適 於上述延伸步驟’並且’於加熱時具有較強之恢復力，該 方面亦特別適於消除延伸步驟中產生之帶之鬆他的步驟。 藉由適當地調整對低密度聚乙烯或者超低密度聚乙烯照射 之電子束之量，可獲得維卡軟化點為5〇它以上且未達9〇艽 且具有充分之均勻擴展性的樹脂。並且，上述經電子束交 聯之聚乙稀係分子鏈之構成中不含氣，因此，使用後即便 對f餘=帶進行焚燒處理’亦不會產生戴奥辛或其類似物 卩香族’故而’環境負擔亦較小。上述低密度聚 乙燦或者超低⑨度聚乙烯之—例，可列舉hpan P()iychem Corporation 製造之 kernel 等。 上述熱塑性交聯樹脂，除了上述離子聚合物樹脂或經 電子束交聯之聚乙稀之外，藉由對乙烯-乙酸乙稀酉旨共聚 物照射電子束而交聯所得者亦較適合。該熱塑性交聯樹脂 於加熱時具有較強之恢復力，該方面特別適於消除延伸步 :中產生之帶之鬆他的步驟。藉由適當地調整電子束之 量，能獲得維卡軟化點為耽以上且未達9〇t且具有充分 之均勻擴展性之樹脂。卜 上逃、，坐電子束交聯之乙烯一乙酸乙 _聚物之分子鏈之構成中亦不含氣，故而，即便於使 用後對多餘之帶進行焚燒處理，亦不會產生戴奥辛或其類 17 201202382 似物即氣化芳香族烴 —乙酸乙烯酯共聚物 製造之Ultrathene等 ’故而，環境負擔亦較小。上述乙烯 之一例’可列舉japan Polychem公司 一另外，11 1所示之示例中，基材膜"為單層，但並不 If定於此巾可為由2種以上之維卡軟化點為以上且 止.C之…、塑丨生交聯樹脂積層而成之2層以上之多層構 土材膜11之厚度並無特別限制，但作為具有於晶圓加 工用帶1〇之擴展步驟中容易拉伸、且不會斷裂之程度的充 刀之強度之厚度，較佳為50um〜2〇〇觀之程度，更佳為 100um〜150um 〇 夕層基材冑11之製造方法，可使用先前已知之擠出 法、層叠法等方法。當使用層疊法之情形時’層間亦可夾 入有接著劑°接著劑可使用先前已知之接著劑。 <黏著劑層> 著劑層12可藉由在基材膜u塗佈黏著劑而形成。構 剎，1明之晶圓加工用* 1〇之黏著劑層12並無特別限 ' I具有如下特性即可：切割時不會與接著劑層13剝 取時晶片飛散等不良狀況之程度的保持性，或拾 .「者’1層13之剝離較容易。為了提高切割後之拾取 “二!劑層12較佳為能量線硬化性者，且較佳為硬化後 易與接者劑層1 3剝離之材料。 :如’本發明巾，較佳為，含有由分子中具有破值為 聚異之能量線硬化性碳—碳雙鍵之化合物（A)與選自 眾異氰酸酿類、r:咿枭& m ^ 一聚氰胺—甲醛樹脂、及環氧樹脂中之至 18 201202382 )1種化合物進行加成反應而成之聚合物。此處，所 月月b i線係札如紫外線之光線、或電子束等電離性放射 線。 以下，對於黏著劑層12之一個主成分即化合物（A) 進行說明。化合物（A)之能量線硬化性碳—碳雙鍵之較佳 的導入量，較佳為碘值為0 5〜20，更佳為〇 8〜1(^若碘 值為0.5以上，則能夠獲得降低能量線照射後之黏著力之效 果，而若碘值為20以下，則能量線照射後之黏著劑之流動 性較充分、且晶圓加工用帶1〇擴展後晶片能獲得充分之間 隙，因此，能夠抑制拾取時各晶片之圖像識別變得困難的 問題。進而’化合物（A )自身具有穩定性，製造較容易。 上述化合物（A)之玻璃轉移點較佳為一 70°C〜0。(：， 更佳為一66°C〜一281。若玻璃轉移點為—7(TC以上，則 對於伴隨能量線照射而產生之熱的耐熱性較充分，而若為〇 C以下’則可獲得防止表面狀態粗糙之晶圓之切割後半導 體晶片飛散的效果。上述化合物（A )可由任意方法製造， 可使用例如：丙烯酸系共聚物與具有能量線硬化性碳―碳 雙鍵之化合物混合而成者；由具有官能基之丙烯酸系共聚 物或者具有官能基之曱基丙烯酸系共聚物（A1)、與具有可 與該官能基反應之官能基並且具有能量線硬化性碳—碳雙 鍵之化合物（A2 )反應而得者。 其中，上述具有官能基之化合物（A1)，可由丙烯酸烷 基醋或者甲基丙烯酸烷基酯等具有能量線硬化性碳一碳雙 鍵之單體（A1 — i )、與具有能量線硬化性碳—碳雙鍵並且 201202382 具有官能基之單體（A1 — 2) ΟΒ J开眾而得。早體（Αΐ_ι)，可 列舉：烷基鏈之碳數為6〜 Τ ζ之丙烯酸己酯、丙烯酸正每 西旨、丙烯酸異辛錯、丙烯酸—2— 师 辛 乙基己3曰、丙稀酸十二烧 基酯、丙烯酸癸酯，咬去ρ技 及者烷基鏈之碳數為5以下之單體， 即丙烯酸戊酯、丙烯酸正 邱馱正丁酯、丙烯酸異丁酯、丙烯酸乙 S曰、丙稀酸曱醋、或者斑盆 00 乂 f興其荨相同之甲基丙烯酸酯等。 單體（A1 1)，^吏用之單體之碳數越大則玻璃轉移 點越低，&而能夠製作具有所需之玻璃轉移點者。並且， 除了玻璃轉移點之外’ & 了提高相溶性及各種性能，亦可 於單體（Al 1)之總質量之5質量％以下之範圍内摻合乙 酸乙烯醋、苯乙烯、丙烯腈等具有碳一碳雙鍵之低分子化 合物。 早體（A1 — 2 )所含之官能基，可列舉羧基、羥基、胺 基、環狀酸酐基、環氧基、異氛酸醋基等，單體（ai — 2) 之具體例’可列舉：丙烯酸、甲基丙烯酸、肉桂酸、衣康 酸、反丁烯二酸、鄰苯二曱酸、丙烯酸—2 _羥基烷基酯類' 曱基丙烯酸一 2 —羥基烷基酯類、二醇單丙烯酸酯類、二醇 單甲基丙烯酸酯類、N一羥甲基丙烯醯胺、N—羥甲基曱基 丙烯醯胺、烯丙醇、丙烯酸―N—烷基胺基乙酯類、甲基丙 稀酸一N —烧基胺基乙基酯類、丙烯醯胺類、曱基丙烯醢胺 類、順丁烯二酸酐、衣康酸酐、反丁烯二酸酐、鄰苯二曱 酸肝 '丙烯酸環氧丙基酯、甲基丙烯酸環氧丙基酯、烯丙 基環氧丙基醚、將聚異氰酸酯化合物之異氰酸酯基之一部 分藉由具有羥基或羧基及能量線硬化性碳—碳雙鍵之單體 20 201202382 而胺酯化所得者等。 化合物（A2 )中使用之官能基，當化合物（a 1 )、亦即 單體（A1 — 2)具有之官能基為羧基或者環狀酸酐基之情形 時，可列舉羥基、環氧基、異氰酸酯基等；當其為羥基時， 可列舉環狀酸酐基、異氰酸酯基等；當其為胺基時，可列 舉環氧基、異氰酸酯基等；當其為環氧基時，可列舉羧基、 裱狀酸酐基、胺基等，具體例可列舉與單體（A1 — 2 )之具 體例中所列舉者相同者。 =合物（A1)與化合物（A2)之反應中，殘留有未反 應之S此基，藉此，可製造酸值或者羥值等特性係本發明 中：規疋者。上述化合物（A)之合成中藉由溶液聚合而 進行反應時之有機溶劑可使用酮系、醋系、醇系、芳香族 系'合纟中’較佳為甲苯、乙酸乙酯、異丙醇、苯甲基 賽路蘇乙基赛腾蘇、丙、甲；^ 7# , j τ基乙基酮4 一般為丙烯酸 糸t δ物之良溶劑且沸點為 ,〇 〇 糾、2 ^ 带點為60c〜12〇c之溶劑，聚合起始 劑通*使用α，α丨一偶氮雙里丁挟笙彼备触/ 硫笼右m 鼠雙，、丁腈荨偶氮雙糸、過氧化苯f 醯專有機過氧化物系等自由 供用觸據^ , 此時，可根據需要 併用觸媒、聚合抑制劑， M ^ Φ ν 了碏由調即聚合溫度及聚合時 間而獲侍所需之分子量之化 丁 子量，較佳A # # 並且，關於調節分 子直較佳為使用硫醇、四氣化碳系之溶 應並不限於溶液聚合，亦 卜，忒反 他方法。 ^塊狀&合、懸浮聚合等其 (A )，但本發明中，化合 1〇〇萬之β Λ 两夂备度。若未達30 雖然如上所料獲得化合物 物（A)之分子量較佳為30萬〜 21 201202382 萬’則變凝集力小，切割晶圓時容易產生晶片之偏移，圖 像識別變得困難。為了極力防止該晶片之偏移，分子量較 佳為40萬以上。而且，若分子量超過1〇〇萬，則合成時以 及塗佈時可能會產生凝膠化。另外，本發明中之分子量係 才曰聚本乙烯換算之質量平均分子量。 右化合物（A)具有羥值為5〜1 〇〇之〇H基，則藉由 減少能量線照射後之黏著力可進一步降低拾取錯誤之危險 性，故而較佳》而且，較佳為，化合物（A )具有酸值為〇 5 〜30之COOH基。此處，若化合物（A)之羥值過低，則 月&量線照射後之黏著力之降低效果不充分，而若過高，則 有損壞能量線照射後之黏著劑之流動性之傾向。而且，若 酸值過低，則帶之恢復性之改善效果不充分，而若過高， 則有損壞黏著劑之流動性之傾向。 繼而，對於黏著劑層之另一主成分即化合物（B )進行 說明。化合物（B)為選自聚異氰酸酯類、三聚氰胺—甲醛 樹脂、以及環氧樹脂中之化合物，可單獨使用、或將2種 以上組合使用。該化合物（B )係作為交聯劑而作用，藉由 與化合物（A )或者基材膜反應所得之交聯構造，於塗佈黏 著劑之後，能夠提高以化合物（A )及（B )為主成分之黏 著劑之凝集力。 聚異氰酸酯類並不特別限制，可列舉例如：4,4,一二苯 基曱烷二異氰酸酯、甲苯二異氰酸酯、苯二亞甲基二異氰 酸酯、4,4'一二苯基醚二異氰酸酯、4,4，— [2,2—雙（4一苯氧 基笨基）丙烧]一異氰酸酯等芳香族異氰酸酯’六亞曱基二異 22 201202382 氰酸酯、2,2,4 一三曱基一六亞曱基二異氰酸酯、異佛爾_ 二異氰酸酯、4,4'_二環己基甲烷二異氰酸酯、2,4，一二環 己基曱烧二異氰酸酯、離胺酸二異氰酸酯、離胺酸三異氛 酸酯等，具體而言，可使用CORONATE L (商品名，日本 聚氨酯（Nippon Polyurethane )股份有限公司製造）等。三 聚鼠胺一甲搭樹脂具體而言，可使用Nik alac MX — 45 (商 品名，SANWA CHEMICAL股份有限公司製造）、MELAN(商 品名’日立化成工業股份有限公司製造）等。環氧樹脂可 使用TETRAD — X (商品名’三菱化學股份有限公司製造） 等。本發明中，尤佳為使用聚異氰酸酯類。 關於（B )之添加量，相對於化合物（A )丨〇〇質量份 而言，必需以成為〇.1〜10質量份、較佳為〇4〜3質量份 之比例之方式進行選擇。藉由於該範圍内進行選擇，能成 為適當之凝集力’且不會劇烈地進行交聯反應，故而，點 著劑之摻合或塗佈等之作業性較良好。 並且，本發明中’較佳為，黏著劑層12中含有光聚合 起始劑（C )。黏著劑居12 Φ ήί·人> > A , 、u 干所含之光聚合起始劑（C)並 無特別限制，可使用弁前p 4去 κ π无别匕知者。可列舉例如：二苯甲酮、 4,4'_二甲胺基二笨甲觸、 冬4,4~~二乙胺基二苯曱酮、4,4, ——氣-一本甲嗣等_ ^田ίΐξρ] J.J. 寻—本曱酮類，苯乙酮、二乙氧基苯乙酮 等苯乙酮類，2 -乙美苗时、贫 产 基‘感醌第三丁基蒽醌等蒽醌類，2 — 氣一9—氧硫口山口星、忠自糸 女息香乙醚、安息香異丙醚、二苯乙二 酮：2,4’5;三芳基咪唑二聚物（咯吩二聚物卜丫啶系化合 物等’其等可單獨使用、或將2種以上組合使用。關於（C) 23 201202382 之添加量，相對於化合物（A) 100質量份而言，較佳為〇 i 〜10質量份，更佳為0.5〜5質量份。 進而，本發明所使用之能量線硬化性黏著劑中，可根 據需要而摻合黏著賦予劑、黏著調整劑、界面活性劑等、 或者其他改質劑等。而且，亦可適當地添加無機化合物填 料。 ' 黏著劑層12之厚度至少為5/z m，更佳為10// m以上。 另外’黏著劑層可為積層有多層之構成，各層之組成可相 同 '亦可各自不同。 <接著劑層> 接著劑層13如下所述：於貼合有半導體晶圓且進行切 割之後’當拾取晶片時’與黏著劑層12剝離且附著於晶片 上’使用為將晶片固定於基板或引線框架時之接著劑。於 半導體晶圓加工時，該接著劑層13可預先積層於在基材膜 11積層有黏著劑層12之晶圓加工用帶1 〇，亦可各自分別貼 合於半導體晶圓。接著劑並無特別限制，只要為一般使用 於切割黏晶帶之膜狀接著劑即可，較佳為丙烯酸系黏接著 劑、環氧樹脂/苯酚樹脂/丙烯酸樹脂之混合系黏接著劑 等。其厚度可適當地設定’較佳為5以m〜100# m之程度。 本發明之晶圓加工用帶10中，接著劑層13亦可藉由 將預先使接著劑層13膜化而成者（以下稱作接著膜）直接 或者間接地層疊於基材膜11上而形成。層疊時之溫度較佳 為，於10°C〜l〇〇°C之範圍内施加〇.〇iN/m〜ΙΟΝ/m之線 壓。另外’接著膜可為於間隔件上形成有接著劑層13者， 24 201202382 2可為於層疊後將間隔件剝離、或者直接作為晶圓 帶10之防護膜使用而當貼合半導體晶圓時將其剝離。 接著膜可積層於㈣劑層12之整個面，Μ 先切割成與貼合之半導體晶圓對應之形狀（預 ^ 著膜。當積層有與半導體晶圓對應之接著膜之情 = 圖1所示，於貼合半導體晶圓w之部分存在接著劑層13 而於貼合環狀框架20之部分無接著劑層η而僅存在黏著 劑層12一般而言’接著劑層13不容易與被著體剝離，，故 而，藉由使用經預切割之接著膜，可獲得如下效果： 使環，框架2〇與黏著劑層12貼合，且當使用後進行帶剝 離時％狀框架20不容易殘留糊劑。 ’ <用途> 關於本發明之晶圓加工用帶1〇之使用用途，只要使用 於至少包含藉由延伸而分割接荽 _ 13之步驟的半導體裝 置之“方法中，則並無特別限制。例如，可較佳地適用 於以下之半導體裝置之製造方法（Α)〜⑼中 半導體裝置之製造方法（Α)包括如下步驟： U)於形成有電路圖案之半導體晶圓表面貼合 護帶； (b)研削上述半導體晶圓背面之背面研磨步驟； (C)於已將半導體晶圓加熱至7〇t〜8(TC之狀態下， 在上述半導體晶圓之背面貼合上述晶圓加工用帶之接著劑 層； (d)自上述半導體晶圓表面剝離表面保護帶； 25 201202382 對上述半導體晶圓之預定分割部分照射雷射光 從而於該晶圓之内部形成因多光子吸收而產生之改質區 域； °° ⑺延伸上述晶圓加工用帶，藉此，沿著分割線分割 上述半導體晶圓及上述接著劑層，從而獲得附有上述接著 劑層之多個半導體晶片； (g)對上述晶圓加工用帶之不與上述半導體晶片重疊 之部分進行加熱而使其收縮’藉此消除上述延伸步驟中產 生之鬆弛，保持該半導體晶片之間隔；及 ⑴自晶圓加工用帶之黏著劑層，拾取附有接著劑層 之上述半導體晶片。 半導體裝置之製造方法（B)包括如下步驟： ⑷於形成有電路圖案之半導體晶圓表面貼合表面保 護帶； . (b )研削上述半導體晶圓背面之背面研磨步驟； (c )於已將半導體晶圓加熱至7〇<t〜8〇。匚之狀態下， 在上述半導體晶圓之背面貼合上述晶圓加工用帶之接著劑 層； (d)自上述半導體晶圓表面剝離表面保護帶； (e )自上述半導體晶圓之表面沿著分割線照射雷射 光，從而分割成各個半導體晶片； (f)藉由延伸上述晶圓加工用帶，對應於每一個上述 半導體曰a片而刀割上述接著劑層，從而獲得附有上述接著 劑層之多個半導體晶片； 26 201202382 立、g)對上述晶圓加工用帶之不與上述半導體晶片重疊 之β分進行加熱而使其收縮’藉此消除上述延伸步驟中產 生之鬆弛，保持該半導體晶片之間隔；及 (h)自晶圓加工用帶之黏著劑層，拾取附有接著劑層 之上述半導體晶片。 半導體裝置之製造方法（c)包括如下步驟： ⑴於形成有電路圖案之半導體晶圓表面貼 護帶； (b) 研削上述半導體晶圓背面之背面研磨步驟； (c) 於已將半導體晶圓加熱至7(rc〜8〇。〇之狀態下， 在述半導體曰曰圓之背面貼合上述晶圓加工用帶之接著 層； (d )自上述半導體晶圓表面剝離表面保護帶； (e)使用切割刀片沿著分割線切削上述半導體晶圓， 從而分割成各個半導體晶片； (〇藉由延伸上述晶圓加4帶’對應於每—個上述 半導體晶片而分割上述接著劑層，從而獲得附有上述接著 劑層之多個半導體晶片； (g) 對上述晶圓加工用帶之不與上述半導體晶片重疊 之部，進行加熱而使其收縮’藉此消除上述延伸步驟中產 生之鬆弛，保持該半導體晶片之間隔；及 (h) 自晶圓加工用帶之黏著劑層，拾取附有接著劑層 之上述半導體晶片。 半導體裝置之製造方法（D)包括如下步驟： 27 201202382 (a )使用切割刀片，沿著分割線預定線對形成有電路 圖案之半導體晶圓以未達晶圆厚度之深度進行切削； (b)於上述半導體晶圓表面上貼合表面保護帶； (c )研削上述半導體晶圓背面而分割成各個半導體晶 片之背面研磨步驟； (d )於已將半導體晶圓加熱至7〇<5(：〜8〇充之狀態下， 在上述半導體晶片之背面貼合上述晶圓加工用帶之接著劑 層； (e )自上述半導體晶圓表面剝離表面保護帶； ♦ (fj藉由延伸上述晶圓加工用帶，對應於每一個上述 半導體ΘΒ片而刀割上述接著劑層，從而獲得附有上述接著 劑層之多個半導體晶片； (g)對上述晶圓加工用帶之不與上述半導體晶片重疊 之部分進行加熱而使其收縮’藉此消除上述延伸步驟中產 生之鬆弛，保持該半導體晶片之間隔；及 ()自Μ圆加工用帶之黏著劑層，拾取附有接著劑層 之上述半導體晶片。 另外，上述半導體裝置之製造方法（Α)〜（D)係 ，用具有基材膜、黏著劑層及接著劑層之晶圓加工用帶 方法。备0日圓加工用帶僅具有基材膜及黏 W層之情形時，於蔣s圓士田 於將B曰圓加工用帶貼合於半導體晶圓之 驟中，於半導體晶圓之背面經由接著劑層而貼合晶圓加 用帶》 <使用方法> 28 201202382 置之製造將本發明之晶圓加工用帶10適用於上述半導體裝 圖$ ’去（A )之情形時的帶之使用方法’參照圖2〜 半導體I丁說明。首先如圖2所示’於形成有電路圖案之 牛導體晶圓w之矣 面保護L 由紫外線硬化性成分構成之表 步驟。’且實施研削半導體晶圓W之背面之背面研磨 之矣2研磨步驟結束之後，如圖3所示，將半導體晶圓W J朝下而將半導體晶圓w載置於晶圓貼片機（wafer Γ:Γ;)力之加熱器台25上之後，於半導體晶…背面 有二=用帶10。此處使用之晶圓加工用帶10係積層 的接著膜；合之半導體晶圓w對應之形狀(預切割) =膜者：於與半導體晶圓W貼合之面，在露出接著劑 之Q域之周圍設有露出黏著劑層12之 ::工用帶10之露出接著劑…部分與半導體二： 之老面貼合’並且將接著劑層13之周圍的露出黏著劑層12 環狀框架20貼合。此時，加熱器台25設定為7。 C 8 0 C，藉此實施加熱貼合。 轨：:而，將貼合有晶圓加工用帶1〇之半導體晶圓W自加 ‘、、、口 5上搬出，如圖4所不，將晶圓加工用帶1〇側朝 I:載置於晶圓吸附台26上。然後，自被吸附固定於吸附 :之半導體晶圓W之上方’例如使用紫外線光源π， 將lOOOmJAV之紫外線照射於表面保護帶^之 側，使表面保護帶14對於半導體晶圓w之接著力/降，= 半導體晶圓w之表面剝離表面保護帶14〇 曰 29 201202382 繼而，如圖5所示，對半導體晶圓w之預定分割部分 照射雷射光，從而於半導體晶圓w之内部形成因多光子吸 收而產生之改質區域3〇。 繼而，如圖6 (a)所示，將於貼合有半導體晶圓w及 環狀框架20之晶圓加工用帶1〇，以基材膜1丨側朝下而載 置於延伸裝置的平台21。圖中，符號22表示延伸裝置之中 空圓柱形狀之推頂構件。 繼而，如圖6( b)所示，於固定環狀框架2〇之狀態下， 使延伸裝置之推頂構件22 ±升，從而使晶圓加丄用;κ 延伸。延伸條件係，延伸速度為例如10〜50〇mm/see，延 伸$ (推頂量）為例如5〜25mm。藉由如此使晶圓加工用 帶1〇於半導體晶圓W之徑向拉伸，以改質區域3〇為起點 而以晶片為單位分割半導體晶圓w。此時，接著劑層13係 於與半導體晶圓W之背面接著之部分，因延伸而產生之拉 伸（變形）受到抑制，故而未產生斷裂；但於晶片c之間 的位置’因帶之延伸而產生之張力較集中，故產生斷裂。 因此，接著劑層13亦與半導體晶圓w 一同被分割。藉此， 可獲得附有接著劑層13之多個半導體晶片C。 繼而，如圖7所示，實施如下步驟··將推頂構件22恢 ::原來之位置，消除先前之延伸步驟中產生的晶圓加工 之鬆弛，從而敎地保持半導體晶片c之間隔。該 匚 圓加工用帶1〇之存在半導體晶片。之 2 架2〇之間的圓環狀區域I使用溫風喷嘴 29喷附50。〇〜9(TC之泡®η 吏基材膜11加熱收縮，從而使 30 201202382 晶圓加工用帶1〇緊端。之後，對黏著劑層12實施能量線 硬化處理或熱硬化處理等，減弱黏著劑層12對於接著劑層 13之黏著力。然後，如圖8所示，利用推頂銷41自基付膜 11之背面（未貼合半導體晶圓之面）推頂半導體晶片C， 並且藉由吸附筒夾42進行吸附而拾取半導體晶片c。 於上述之半導體裝置之製造方法中，由熱曰曰塑性交 脂構成之基材m u對於延伸時所施加之拉伸之恢復 大，且維卡軟化點亦較低，故而加熱時容易收縮。因此， 可較佳地適用於下述步驟：藉由 #由加熱收縮而消除於分割接 者劑層之延伸步驟後的晶圓加工用帶 弛，從而使帶緊繃的步驟。 【實施例] 繼而’針對用於明確本發 &月之效果的實施例及比較例 進行洋細說明，作太絡日日* — 仁本發明並不限於該等實施例。 實施例1〜5、比較例丨〜7 ^ m , 甲之日日圓加工用帶1()係分 ί使用表1、表2所示之基好聪 μ 12 ,, 、。其他構成即構成黏著劑 曰12之黏者劑組成物、構 ^ a ill Λα τ μ t n 成接考劑層13之接著劑組成物 及日日圓加工用帶1〇之製作 ’係相同。另外，以下之％明 中，密度係依據JISK7ll2it /卜以下之說月 差槁尨敖Θ ~、 仃測疋，熔點係依據DSC (示 產和·描熱置測定）進行測定。 吟 (1 )樣品之製作 (1.1 )實施例1 (基材臈11之製作） 將利用自由基聚合法而 成之乙烯一甲基丙烯酸—甲 31 201202382 基丙烯酸乙酯（質量比為8: 1: 1)三元共聚物之鋅離子聚 合物a (密度為0.96g/ cm3、鋅離子含量為4質量％、氣含 量未達1質量％、維卡軟化點為5 6 °C、溶點為8 6 °C )之樹 脂珠粒於140°C下熔融，利用擠出機將其形成為厚度為1〇〇 μιη之長形膜狀，藉此製作構成基材膜11之支持基材 (黏著劑組成物1之製備） 使丙烯酸丁酯、丙烯酸一2 —羥基乙酯及丙烯酸進行自 由基聚合，藉此獲得丙烯酸系共聚物（分子量為6〇萬，經 值為4_7mgK〇H/g，酸值為〇_2mgKOH/g)。相對於該丙 烯酸系共聚物之100質量份，將添加作為光聚合性硬化物 之三經曱基丙院三丙烯酸酯30質量份 '作為聚異氰酸酷之 CORONATE L (曰本聚氣g旨公司製造）2質量份、作為光聚 合起始劑之IrgaCUre184(日本Ciba—Geigy公司製造）i質 量份所得之混合物溶解於乙酸乙酯中，加以攪拌而製備黏 著劑組成物1。 接著劑組成物 於由作為環氧樹脂之甲*清漆型環氧樹脂（環氧當量 為197，分子量為1200，軟化點為7〇t ) 5〇質量份、作為 矽烷偶合劑之r —酼丙基三甲氧基矽烷15質量份、γ 一脲 基丙基三乙氧基矽烷3質量份、平均粒徑為16_之矽土填 料3〇質量份構成之組成物中，添加環己酮並加以授料 合’進而使用珠磨機混練90分鐘。進而，添加由，稀酸； S旨與丙稀酸-2-經基乙酿進行自由基聚合而合成 酸樹脂（分子量為2〇萬，經值為3.5mgKOH/g) 1〇〇質量 32 201202382 伤、以及作為硬化劑之C0R0NATE L丨質量份，進 混合，而製備接著劑組成物丨。 見 (晶圓加工用帶1 0之製作） 於構成基材膜11之支持基材丨上，以乾燥後之厚度為 〇 # m之方式塗佈黏著劑組成物丨，於i 1 下乾燥3分鐘， 從而製作基材膜n上形成有黏著劑層12之黏著片。除此之 外，將對接著劑組成物i以乾燥後之厚度為2〇以m之方式 塗佈於由已進行脫模處理之聚對苯二甲酸乙二酯膜構成之 ㈣襯塾’且於i 1()°c下乾燥3分鐘，從而製作剝離概塾上 形成有接著劑層13之接著膜。 ^繼而，將黏著片剪裁成，如對於環狀框架20能夠以覆 蓋開口部之方式進行貼合的如圖3等所示之形狀。而且， 將接著膜剪裁A，如能夠t蓋半導體晶圓w之背面之如圖 3等所不之形狀。然後，使上述黏著片之黏著劑層^ 2側與 上述接著膜之接著劑層13側，如圖3等所示，以於接著膜 之周圍形成露出黏著劑層12之部分之方式進行貼合，從而 製作晶圓加X用帶1〇。藉此’製作出依序積層有構成基材 獏11之支持基材、能量線硬化型黏著劑層12、及接著劑層 U之晶圓加工用帶10，將其作為實施例丨之樣品。 (1.2)實施例2 (基材膜11之製備） 將利用自由基聚合法而合成之乙烯一甲基丙烯酸（質 置比為9.5 : 0.5)二元共聚物之鋅離子聚合物b (密度為 〇.95g/cm3’鋅離子含量為2質量％，氯含量未達】質量％， 33 201202382 維卡軟化點為8lt ’炫點為1帆）之樹脂珠粒於14(rc下 熔嘁制擠出機形成厚度為1〇〇_之長形膜狀，藉此製 作構成基材膜11之支持基材2。 使用該構成基材膜11之支持基材2 '黏著劑組成物1、 及接著劑組成物卜藉由與實施例i相同之方法製作晶圓加 工用帶10 ’將其作為實施例2之樣品。 (1.3 )實施例3 (基材膜11之製備） 將由一茂金屬聚合法（metallocene polymerization)而合 成之超低密度聚乙烯ULDPEa(密度為〇.9〇g/cm3、氯含量 未達1質量％ '維卡軟化點為72〇c、熔點為9(rc )之樹脂 珠粒於i4〇r下熔融，利用擠出機形成厚度為】00v m之長 形膜狀之後，使用中能量電子束加速裝置以加速電壓 1 MeV、照射量20Mrad照射電子束，藉此製作構成基材膜 11之支持基材3。 使用a亥構成基材膜1 1之支持基材3、黏著劑組成物1、 及接著劑組成物1 ’藉由與實施例1相同之方法製作晶圓加 工用帶10，將其作為實施例3之樣品。 (1.4)實施例4 (基材膜11之製備） 將由二茂金屬聚合法合成之低密度聚乙烯LDPEb (密 度為0.91 g/ cm3、氣含量未達1質量％，維卡軟化點為8 1 °C ’熔點為102°C )之樹脂珠粒於140°C下熔融，利用擠出 機形成厚度為100 長形膜狀之後，使用中能量電子束加 34 201202382 速裝置以加速電壓1MeV、照射量2〇Mrad照射電子束，藉 此’製作構成基材膜π之支持基材4。 9 使用該構成基材膜11之支持基材4、黏著劑組成物i、 及接著劑組成物卜藉由與實施例"目同之方法製作晶圓加 工用帶10，將其作為實施例4之樣品。 (1.5 )實施例5 (基材膜11之製備） 曰將利用自由基聚合法而合成之乙烯—乙酸乙烯酯（質 量比為9: 1)共聚物EVAa(密度為〇93g/cm3，氣含量未 達1質量％，維卡軟化點為69t，炫點為⑽）之樹月旨珠 粒於140〇C下熔融，利用擠出機形成厚度為1〇〇_之長形 膜狀之後，使用中能量電子束加速裝置以加速電壓⑽"、 照射量綱-照射電子束，藉此，製作構成基材膜Η之 支持基材5。 使用該構成基材膜η之支持基材卜黏著劑組成物卜 及接著劑組成物卜藉由與實施例"目同之方法製作晶圓加 工用帶10，將其作為實施例5之樣品。 (1 · 6 )比較例1 (基材膜11之製備） 旦將利用自由基聚合法而合成之乙稀—甲基丙稀酸（質 里比為9.5 . 〇.5 )二元共聚物之鋅離子聚合物〇 (密度為 g/ cm鋅離子含量為1質量％，氣含量未達i質量％， 維卡軟化點為8〇t ’熔點為9rc )之樹脂珠粒於刚。c下 …3 ^用擠出機形成厚度為100/zm之長形膜狀，藉此， 35 201202382 製作構成基材膜11之支持基材6。 使用該構成基材膜11之支持基材6、黏著劑組成物卜 及接著劑組成物卜藉由與實施例"目同之方法製作晶圓加 工用帶10，將其作為比較例i之樣品。 (1.7 )比較例2 (基材膜11之製備） 將利用自由基聚合法而合成之乙烯_乙酸乙烯酯（質 量比為9 : 1 )共聚物EVAa (密度為〇 93g/⑽3，氣含量未 達1質量％，維卡軟化點為机’炫點為96<t)之樹脂珠 粒於140°C下熔融，利用擠出機形成厚度為1〇〇以爪之長形 膜狀，藉此製作構成基材膜丨丨之支持基材7。 使用該構成基材膜U之支持基材7、黏著劑組成物i、 及接著劑組成物1，藉由與實施例丨相同之方法製作晶圓加 工用帶10 ’將其作為比較例2之樣品。 (1 · 8 )比較例3 (基材膜11之製備） 將市售之工業用聚氣乙烯a(塑化劑3〇質量％，密度為 1.45g/cm3 ’氣含量為56 8質量％，維卡軟化點為76它， 熔點為100°C )之樹脂珠粒於14〇〇c下熔融，利用擠出機形 成厚度為100/ini之長形膜狀，藉此製作構成基材膜丨丨之 支持基材8。 使用該構成基材膜11之支持基材8、黏著劑組成物1、 及接著劑組成物1 ’藉由與實施例丨相同之方法製作晶圓加 工用帶10，將其作為比較例3之樣品。 36 201202382 (1.9)比較例4 (基材膜11之製備） 將利用二茂金屬聚合法而合成之超低密度聚乙稀 ULDPEa (密度為0.90g/ cm3、氣含量未達！質量％、維卡 軟化點為72。(：、熔點為90°C )之樹脂珠粒於14(rCT熔融， 利用擠出機形成厚度為ΙΟΟμιη之長形膜狀，藉此製作構成 基材膜11之支持基材9。 使用該構成基材膜11之支持基材9、黏著劑組成物i、 及接著劑組成物1 ’藉由與實施例丨相同之方法製作晶圓加 工用帶10，將其作為比較例4之樣品》 (1 · 10 )比較例5 ·(基材膜11之製備） 將利用二茂金屬聚合法而合成之低密度聚乙烯LDpEb (密度為0.91g/cm3、氣含量未達！質量％、維卡軟化點為 81 C、熔點為102〇c )之樹脂珠粒於14〇t：下熔融利用擠 出機形成厚度為1〇〇 V m之長形膜狀，藉此製作構成基材膜 11之支持基材1 〇。 ' 使用該構成基材臈U之支持基材1〇、黏著劑組成物卜 及接著劑組成物1 ’藉由與實施例丨相同之方法製作晶圓加 工用帶10,將其作為比較例5之樣品。 (1.11 )比較例6 (基材膜11之製備） 將利用二茂金屬聚合法而合成之低密度聚乙烯LDPEc (密度為〇.91g/Cm3,氯含量未達1質量％，維卡軟化點為 37 201202382 96C，熔點為l〇2°C )之樹脂珠粒於i40°C下熔融，利用擠 出機形成厚度為100/zm之長形膜狀之後，使用中能量電子 束加速裝置以加速電壓1 MeV、照射量20Mrad照射電子束， 藉此製作構成基材膜11之支持基材U。 使用該構成基材膜11之支持基材n、黏著劑組成物卜 及接著劑組成物1，藉由與實施例丨相同之方法製作晶圓加 工用帶10，將其作為比較例6之樣品。 (1 · 1 2 )比較例7 (基材膜11之製備） 將利用二茂金屬聚合法而合成之低密度聚乙烯LDPEc (密度為0.91g/cm3 ’氣含量未達i質量。/。，維卡軟化點為 96C，熔點為i〇2°c )之樹脂珠粒於14〇。(：下熔融，利用擠 出機形成厚度為l〇〇ym之長形膜狀，藉此製作構成基材膜 11之支持基材12。 使用該構成基材膜11之支持基材12、黏著劑組成物卜 及接著劑組成物1，藉由與實施例丨相同之方法製作晶圓加 工用帶10 ’將其作為比較例7之樣品。 (2 )樣品之評估 (2.1)因加熱產生之收縮應力之增大量 藉由以下所示之方法，測定出對實施例丨〜5及比較例 1〜7之晶圓加工用帶進行加熱時收縮應力之増大量。 自實施例1〜5及比較例丨〜7之晶圓加工用帶去除接 著劑層之後，將該晶圓加工用帶加工成依據JIS K7丨62所決 定之尺寸之試驗片。此時，製作兩種試驗片：試驗片之長 38 201202382 度方向（職予拉伸應變之方 輥狀捲繞時者將晶圓加工用帶呈 "支持基材之擠出成形步驟中的擠 二：：方向（廳方向));長度方向係沿著與捲繞方向垂 ( TD方向）°接著’針對該試驗片’使用附有加 「腔至之STR0GRAPH，利用依據m Κ7162戶斤決定之方 :離=I上迷帶之試驗μ 1G %之拉伸應變之後將爽頭間之 :持為-定’於此狀態下’對於進行加熱直至該試驗 八之/皿度達到7(rc為止之過程、此後於之溫度保持1 /刀鐘之過程、及此後將該試驗片返回至室溫之過程中的收 縮應力進行監控。根據所得之測定結果，由觀測到之最大 、广％、力之值減去剛要開始加熱之前的初始應力之值，求 出收縮應力之增大量Μ吏用各實施例及各比較例之晶圓加 工用帶之情形時的結果如表丨及表2所示。 (2.2 )半導體加工步驟之適應性試驗 曰藉由以下所示之方法，關於上述實施例及上述比較例 之晶圓加工用帶，實施相當於上述半導體裝置之製造方法 (A)的下述半導體加工步驟之適應性試驗。 (a)於形成有電路圖案之半導體晶圓表面貼合表面 護帶之步驟。 (b )研削上述半導體晶圓背面之背面研磨步驟。 (c)於已將半導體晶圓加熱至7〇〇c〜8〇°c之狀態下， 在上述半導體晶圓之背面貼合上述晶圓加工用帶之接著劑 層’同時將晶圓加工用環狀框架與下述部位貼合之步驟， 言亥苦P · ’、’上述晶圓加工用帶之黏著劑層未與接著劑層重 39 201202382 合而露出之部分。 (d)自上述半導體晶圓表面剝離表面保護帶之步驟。 (e )對上述半導體晶圓之預定分割部分照射雷射光， 於該晶圓之内部形成因多光子吸收而產生之改質區域之步 驟。 (f )藉由使上述晶圓加工用帶延伸1 〇% ’而沿著分割 線刀上述半導體晶圓及上述接著劑層，從而獲得附有上 述接著劑層之多個半導體晶片的步驟。 (g)加熱步驟，即，將上述晶圓加工用帶之不與上述 T導體晶片重合之部分（存在半導體晶片之區域與環狀框 架之間的圓環狀區域）加熱至50t或者7crc或者9(rc,持 ”、'直至藉由目測確認上述帶不鬆弛為止。另外，圮 料該加熱步驟中加熱之時I而且，上述加熱步驟之後， 將符合JIS B7609之10g砝碼載置於基材膜之背面（未與半 導體晶圓貼合之面），測定晶圓加工用帶之鬆他量，確認該 备弛量未達5mm。 时接㈣層之上述半㈣晶片，自晶圓加工 用帶之點著劑層拾取之步驟。 圓力（g)步驟結束時之鬆他量之測定係如圖9所示，於晶 =工用帶⑽於環狀框架20之狀態下，將符w 碼載置於基材膜之背面（未貼合半導體晶圓之面） 而造仃測定，將晶圓加工用帶 貼入^ τ 用帶10與處於與環狀框架20之 &面平行之狀態時的位置（ 之跖Μ ,㈤ 史虛線所不之位置）間 互離（圓9中a之距離）作為鬆 私他重。使用各實施例及各 40 201202382 比較例之晶圓加工用帶之情形時的鬆弛量及加熱時間之結 果如表1及表2所示。 (2.3)拾取成功率 關於上述實施例及比較例之晶圓加工用帶，評價最後 之（h )步驟之良率（拾取成功率）。使用各實施例及各比 較例之晶圓加工用帶之情形時的結果如表1及表2所示。 [表1] 實施例 1 2 3 樹脂 離子聚合物a 離子聚合物b 電子束交聯ULDPEa 其;bl· 交聯之有無 有 有 有 軟化點 56°C 81°C 72°C 氣量 未達1% 未達1% 未達1% 因加熱產生之收 縮應力增大量 捲繞方向 10.2MPa ll_2MPa 9.3MPa 與捲繞方向垂直 之方向 7.7MPa 8.9MPa 8.3MPa 50°C 加 加熱所需之時間 lOsec 30sec 20sec 熱收縮 加熱後之鬆弛量 1.2mm 2.0mm 2.7mm 試驗結 拾取步驟中再黏接之產生 0/100 0/100 0/100 果 拾取成功率 100% 100% 100% 7(TC 加 加熱所需之時間 lOsec lOsec lOsec 熱收縮 加熱後之鬆弛量 1.2mm 2.5mm 1.0mm 試驗結 拾取步驟中再黏接之產生 0/100 0/100 0/100 果 拾取成功率 100% 100% 100% 90°(:加 加熱所需之時間 lOsec lOsec lOsec 熱收縮 加熱後之鬆弛量 0.8mm 1.0mm 1.2mm 試驗結 拾取步驟中再黏接之產生 0/100 0/100 0/100 果 拾取成功率 100% 100% 100% 41 201202382 實施例 4 5 樹脂 電子束交聯LDPEb 電子束交聯EVAa 基材 交聯之有無 有 有 軟化點 81°C 69〇C 氣量 未達1% 未達1% 因加熱產生之收 捲繞方向 lO.OMPa ll.OMPa 縮應力增大量 與捲繞方向垂直之方向 8.6MPa 9.1 MPa 50°C加熱 加熱所需之時間 30sec 20sec 加熱後之鬆弛量 2.5mm 2.0mm 結果 拾取步驟中再黏接之產生 0/100 0/100 拾取成功率 100% 100% 70°C加熱 收縮試驗 結果 加熱所需之時間 20sec lOsec 加熱後之鬆弛量 2.0mm 2.0mm 拾取步驟中再黏接之產生 0/100 0/100 拾取成功率 100% 100% 90°C加熱 收縮試驗 結果 加熱所需之時間 lOsec lOsec 加熱後之鬆弛量 2.0mm 1.5mm 拾取步驟中再黏接之產生 0/100 0/100 拾取成功率 100% 100% 42 201202382 [表2] 比較例 1 2 3 基材 樹脂 離子聚合物C EVA a 聚氣乙稀a 交聯之有無 有 無 無 軟化點 80°C 69°C 76〇C 氣量 未達1% 未達1% 56.80% 因加熱產生之收 縮應力增大量 捲繞方向 8.2MPa 4_2MPa 9.3MPa 與捲繞方向垂直之方向 6.7MPa 4.2MPa 7.6MPa 50°C加熱 收縮試驗 結果 加熱所需之時間 120sec 300sec 30sec 加熱後之鬆弛量 3.2mm 4.2mm 3.0mm 拾取步驟中再黏接之產生 1/100 7/100 1/100 拾取成功率 99% 93% 99% 70t加熱 收縮試驗 結果 加熱所需之時間 50sec 240sec lOsec 加熱後之鬆弛量 2.1mm 4.0mm 3.0mm 拾取步驟中再黏接之產生 0/100 10/100 0/100 拾取成功率 100% 90% 100% 90°C加熱 收縮試驗 結果 加熱所需之時間 30sec 150sec lOsec 加熱後之鬆弛量 3.8mm 3.8mm 1.2mm 拾取步驟中再黏接之產生 0/100 9/100 0/100 拾取成功率 100% 91% 100% 43 201202382 基材 例 _ 樹脂 4 ULDPEa —1_ LDPEb 〜 6 7 電子束交聯LDPEc LDPEc 殳聯之有無 無 無 有 無 — 軟化點_ Ί2Χ 81°C 96〇C 96〇C 氣量 未達1% 未達1% 未達1% 未達1% 因加熱產生之收 捲繞方向 4.2MPa 6.1MPa 9.0MPa 3.5MPa 縮應力 增大量 與捲繞方向垂直 之方向 4-lMPa 5.8MPa 7_lMPa 3.3MPa 50 C加 熱收縮 試驗結 果 -加熱所需之時間 300sec 360sec 180sec 480sec 加熱後之鬆弛量 4.6mm 4.0mm 3.9mm 4.8mm _^·步驟中再黏接之產峰 11/100 10/100 11/100 13/100 拾取成功率 89% 90% 89% 87% 7〇°C 加 熱收縮 試驗結 果 加熱所需之時間 210sec 210sec 150sec 360sec 一.加熱後之鬆弛量 4.2mm 4.0mm 2.6mm 3.7mm 拾取步驟中再黏接之產生 9/100 13/100 0/100 7/100 拾取成功率 91% 87% 100% 93% 90 C加 熱收縮 試驗結 果 加熱所需之時間 180sec 210sec 40sec 210sec 加熱後之鬆弛量 4.2mm 3.6mm 2.0mm 4.0mm 拾取步驟中再黏接之產生 9/100 8/100 0/100 10/100 拾取成功率 91% 92% 100% 90% (3 )總結 根據以上結果可知，藉由使用由JIS K7206所規定之維 卡軟化點為50°C以上且未達90。(：、因熱收縮產生之應力之 增大為9MPa以上之熱塑性交聯樹脂作為基材膜，能成為適 用於半導體裝置之製造的晶圓加工用帶。亦即，可知，藉 由50 C、7(TC、90。(：之任一溫度下之加熱收縮步驟皆可於 較短的加熱時間内表現出充分之收縮性，加熱收縮步驟之 後的鬆他亦非常少。而且可知，因鬆弛量如此少，故能夠 將分割完畢之半導體晶片及已分離之接著劑穩定地固定於 晶圓加工用帶上，不會導致鄰接之晶片彼此接觸而產生破 損、或接著劑層彼此接觸而再黏接，從而表現出良好的拾 取性。另外’因於較短的加熱時間内表現出充分之收縮性， 44 201202382 故亦不會因施加過多之熱量而使接著劑層13與黏著劑層i2 密接而導致拾取性下降。 關於維卡軟化點為9旳以上者、或因熱收縮產生之應 力之增大量未達9.0MPa者（比較例丨、2及.4〜7)，為了獲 得鬆弛而需要較長地加熱時間’加熱收縮步驟後之鬆弛量 亦較多，拾取性不佳。 另 比較例3中，無交聯構造，但維卡軟化點為50 °C以上且未達9(TC，且熱收縮產生之應力之增大為9_ 以上，故而，加熱收縮性表現出良好之結果。然而，因材 質為聚氯乙烯帶’故使用後經焚燒處理之時會產生戴奥辛 或其類似物即氣化芳香族烴，從而可能會對環境帶來負 擔。對此’實施例卜5中所示之基材膜"係因具有交聯構 造故擴展性更具有等向性，並且氣原子之含量未達丨質量 °/❶，故而’即便使用後進行焚燒處理㈣會產生戴奥辛或其 類似物即氯化芳香族烴’從而不會對環境帶來負擔。 而且’上述之半導體裝置之製造方法b〜d係於延伸步 驟中已分割成各個半導體晶片，除該點之外，皆進行與半 導體裝置之製造方法A中之延伸步驟、熱收縮步驟、拾取 步驟相同之步驟。因此可知’使用實施例丨〜5及比較：1 〜7之晶圓加工用帶10時的結果係與表1、表2所示之社 果相同，且半導體裝置之製造方法㈣令，於熱收缩性、 拾取性之觀點而言，使用本發明之晶圓加工㈣ι〇皆有 用另外可知，®晶圓加工用帶1 〇僅包含黏著劑層i 2 時亦可獲知與表1、表2所示結果相同的結I。 45 201202382 【圖式簡單說明】 圖1係表示於半導體晶圓貼合有本發明之實施形態之 晶圓加工用帶、及表面保護帶的狀態之剖面圖。 圖2係表示於半導體晶圓貼合有表面保護用帶之狀態 的剖面圖。 圖3係用於對在晶圓加工用帶貼合半導體晶圓及環狀 框架之步驟進行說明的剖面圖。 圖4係用於對自半導體晶圓之表面剝離表面保護帶之 步驟進行說明的剖面圖。 圖5係表示藉由雷射加工而於半導體晶圓形成有改質 區域之樣態的剖面圖。 圖6 ( a )係表示晶圓加工用帶載置於延伸裝置之狀態 i面圖。圖6 ( b )係表示延伸後之晶圓加工用帶 劑層、及半導體晶圓之剖面圖。 行二二係用於對藉由加熱收縮而消除帶之鬆弛的步驟進 仃說明之剖面圖。 係用於自晶圓加工用帶 士 … …，π令蜊帶炙表面拾取附 者劑層之半導體晶片的步驟進行說明之剖面圖。 圖9係用於對鬆他量之駭方法進行說明之剖面圖 【主要元件符號說明】 1〇晶圓加工用帶 11基材骐 12黏著劑層 1 3接著劑層 46 201202382 14 表面保護膜 20 環狀框架 21 平台 22 推頂構件 25 加熱器台 26 吸附台 27 紫外線光源 28 加熱收縮區域 29 溫風喷嘴 30 改質區域 41 推頂銷 42 吸附筒夾 50 符合JIS B7609之10g砝碼 W 半導體晶圓 C 半導體晶片 a 鬆弛量 47The damage is caused, or the adhesive layers are in contact with each other, and the yield of the semiconductor component manufacturing step is deteriorated. 7 201202382 For::The purpose of the month is to provide a wafer processing tape with a uniform spread that is suitable for the step of dividing the adhesive layer by stretching, and exhibits sufficient shrinkage during the heat shrinking step. Sexuality does not cause a bad condition due to slack after the heat shrinking step. In order to solve the above problem, the extension of the table is along the wafer "and then (4)#). The extendable wafer processing η 使用 used in the carrier layer is characterized by having a substrate film and a substrate 1 disposed on the substrate ,, the substrate film being a Vicat softening point specified by JIS K7206 The above-mentioned and less than (4) thermoplastic cross-linked resin is formed, and the stress of the heat is generated by the clerk & Further, in the second aspect of the present invention, the adhesive layer is laminated on the adhesive layer. According to the first and second aspects of the wafer processing belt, the base film is composed of a thermoplastic crosslinked resin having a Vicatization point of 5 G C or more and less than 9 Qt. 廄 + + + Μ ^ 曰 due to heat shrinkage It is more than 9Mpa or more. Therefore, it can be used for uniform expansion of the step of stretching the adhesive layer by stretching, and it is also exhibited in the heat shrinking step, and the shrinkage of the filling knife is seen, after the heat shrinking step. A wafer processing tape that does not cause a problem due to slack. That is, the molecular chain in the non-crosslinked resin is oriented in the processing direction and the expandability is anisotropic. As the σ-仁/, and the cross-linking between the knife chains, the expansion dream becomes isotropic, and It is preferably used for the extension of the adhesive layer, and in the case where the film composed of the crosslinked resin is given a certain degree of tensile strain, the non-crosslinked portion collapses and is stored at the crosslinking point. Therefore, if the non-crosslinked portion is softened by heating, a restoring force is applied to the base film by the stress at the crosslinking point. Generally, in the extension step 8 201202382, the expansion ratio of the wafer processing tape is about 10%, but when the tensile strain of Η% is applied to a film made of ordinary non-crosslinked resin such as polyethylene. It will collapse - even if it is heated, it will hardly recover. However, if it is a film of a crosslinked resin, it is easily contracted and recovered by heating to a temperature near or above the softening point. Further, in general, in the heating step after the extending step, heating is performed using a warm air blower or the like to bring the temperature of the wafer processing belt to a level of 50 C to 90 C. Therefore, the wafer processing belt is used. The base film resin is preferably a Vicat softening point defined by JIS Κ 7206 of 5 〇χ: or more and not 9 〇 C is more preferably 5 (rc or more and less than _. In addition, if the Vicat softening point is exceeded If the temperature is low, the resin will be excessively softened and fluidized, which is not preferable. If the substrate of the wafer processing belt is fluidized in the heating and shrinking step, the wafer reinforcement tape will be used. The lower limit of the Vicat softening point is 50. (: Left and right. 闵α μ 丄 将 For the above reasons, the Vicat softening point is 50. (: Above and less than 90 Χ: thermoplastic crosslinked resin core substrate film, then The wafer processing tape 0 having a uniform spreadability for the step of dividing the adhesive layer by stretching and exhibiting sufficient shrinkage in the heating and shrinking step can be used as the wafer processing tape , it is not easy to fully eliminate the delay in the steps The slack for the round processing belt, which is used to increase the shrinkage stress by heating after the stretching of the wafer processing belt extension = G / ° corresponding to the ordinary stretching step is applied —, the degree of privacy is higher than the right. The semiconductor chip and the separated adhesive after the division cannot be stably fixed to the wafer processing tape 9 201202382. The layers of the agent are in contact with each other and then adhered, resulting in deterioration of the yield of the semiconductor component manufacturing step, and acting on the wafer processing tape during heat shrinkage: force:::, according to the method determined by JIS K7162 After the tensile strain of 10% of the test piece of the wafer processing tape is carried out, 'the distance between the chucks is kept constant, and in this state, the process is heated until the temperature of the test piece reaches 70 ° C. The test piece is maintained at a temperature of 7 Torr for 1 minute, and after the test piece is returned to room temperature, the maximum heat shrinkage stress of the test piece is preferably higher than just starting to heat up. The initial stress is greater than 9 MPa, more preferably more than Pa. When using a wafer processing tape using a substrate film having an increase in stress due to heat shrinkage of less than 9 MPa, the semiconductor wafer is used. The expansion stress generated by the weight of the wafer processing tape itself is offset by the shrinkage stress, and the relaxation cannot be sufficiently eliminated by heating. For the above reasons, the wafer processing tape can be used as follows. The thermoplastic cross-linked resin having an increase in stress due to heat shrinkage is used for the base film, so that the heat shrinkage step does not cause a problem due to slack. The wafer of the first or second aspect described above The processing belt according to the third aspect of the present invention is characterized in that the thermoplastic crosslinking resin is a copolymer of ethylene bis(indenyl) acrylate or an alkyl (meth) acrylate (meth) acrylate. The ionic polymer resin obtained by crosslinking the two TL copolymer with metal ions. According to the first aspect or the second aspect of the present invention, in the fourth aspect of the present invention, the thermoplastic crosslinked resin is obtained by electron beam irradiation 10 201202382 to make low density polyethylene or a flying super Low-twist polyethylene cross-linking. According to the first or seventh aspect of the present invention, the fifth aspect of the present invention is characterized in that the thermoplastic crosslinked resin of the present invention is irradiated by electron beam. M-wine-acetic acid ethylene lysine copolymer cross-linking. The sixth aspect of the present invention as described in the second, third, fourth or fourth aspect of the invention is characterized in that the content of the chlorine atom of the fat is less than 丨% by mass. The fifth aspect of the wafer processing the above thermoplastic cross-linking tree... According to the 帛3 to the fifth aspect of the wafer processing belt, since the composition of the molecular chain does not contain chlorine in the early position, & And the wafer processing belt with low burden on the ring 1 brother. The second aspect of the present invention, characterized in that the wafer processing belt is used in a semiconductor including the following steps. The manufacturing method of the device is: (a) bonding the surface protective tape to the surface of the semiconductor wafer on which the circuit pattern is formed; (b) grinding the back surface grinding step of the semiconductor wafer back surface; (c) heating the semiconductor wafer Adhesive layer of the wafer processing tape is bonded to the back surface of the semiconductor wafer under the condition of 70 ° C to 80 ° C; (d) the surface protection tape is peeled off from the surface of the semiconductor wafer; (e) Irradiating the predetermined portion of the semiconductor wafer with the laser light to form a modified region generated by multiphoton absorption inside the wafer; . (f) extending the above-described wafer processing tape, thereby dividing the semiconductor sa m and the adhesive layer along the dividing line, and the plurality of semiconductor wafers from the coating layer; (4) having the second pair of the above-mentioned receivers Wafer processing belts are not in the above-mentioned semi-conducting Zhao wafers, and (4) counties are used for the above-mentioned wafer processing: 2, 3rd, 4th, 4th, 5th or 6th aspect of wafer processing In the eighth aspect of the present invention, the wafer processing tape is used for a semiconductor device including the following steps: (1) bonding a surface of a semiconductor wafer having a circuit pattern to a surface. (1) grinding the backside grinding step of the back surface of the semiconductor wafer; (c) heating the semiconductor wafer to 7 Å. . ~8〇. . And bonding the adhesive layer of the wafer processing tape to the back surface of the semiconductor wafer, (d) peeling the surface protection tape from the surface of the semiconductor wafer; (e) from the surface of the semiconductor wafer The dividing line illuminates the laser light and is divided into individual semiconductor wafers; (f) by extending the wafer processing tape, the above-mentioned adhesive agent is divided into layers corresponding to each of the semiconductor wafers, thereby obtaining an attached a plurality of semiconductor wafers having the above-mentioned adhesive layer; (g) heating the portion for processing the wafer so that the shrinkage tape does not overlap with the semiconductor wafer, thereby eliminating the relaxation of the production step 12 201202382 And maintaining the interval between the semiconductor wafers; and (h) picking up the semiconductor wafer with the adhesive layer from the adhesive layer of the wafer processing tape. According to the ninth aspect of the present invention, in the second aspect, the fourth aspect, the fourth aspect, the fifth aspect, or the sixth aspect, the wafer processing belt is used in a semiconductor including the following steps. The manufacturing method of the device is: ▲ bonding the surface protection tape on the surface of the semiconductor wafer on which the circuit pattern is formed; (1) grinding the back surface grinding step of the semiconductor wafer back surface; (c) heating the semiconductor wafer to 7Qt~ order And the surface of the wafer processing tape is bonded to the back surface of the semiconductor wafer; (d) the surface protection tape is peeled off from the surface of the semiconductor wafer; and the dicing blade is used along the dividing line. Cutting the semiconductor wafer to be divided into individual semiconductor wafers; (a plurality of semiconductor wafers for dividing the adhesive layer by extending the wafer processing 咿 corresponding to one of the mother-conductor day sheets ❹ obtaining the above-mentioned (g) heating the unprocessed portion of the wafer processing tape to make the 1 S-sheet heavy and occluded to eliminate the slack generated in the extending step, and to maintain the And (h) picking up the semiconductor wafer with the upper layer from the adhesive layer of the wafer processing tape. For example, the above 2, 篦3, 铱^ Λ*, 5th or 3rd Aspect wafer processing 13 201202382 A belt according to a tenth aspect of the present invention is characterized in that the wafer processing belt is used in a method of manufacturing a semiconductor device including the following steps: (a) using a cutting blade Cutting the semiconductor wafer on which the circuit pattern is formed to a depth less than the thickness of the wafer along a predetermined line of the dividing line; (b) bonding the surface protective tape on the surface of the semiconductor wafer; (c) grinding the semiconductor wafer a backside polishing step of dividing the semiconductor wafer into a back surface; aa 70 ° C to 80 ° C, the wafer processing tape adhesive (d) has been heated to the back side of the semiconductor wafer Combining the above layers; e peeling the surface protection tape on the surface of the semiconductor wafer; (7) dividing the adhesive layer corresponding to each of the upper semiconductor wafers by extending the wafer processing die, thereby obtaining the above-mentioned adhesive a plurality of semiconductor wafers; the above-mentioned connection (g\heating and shrinking the portion of the wafer processing tape that is not heavy with the semiconductor wafer) thereby eliminating slack in the extending step and maintaining the semiconductor The spacing of the wafers; and (h) picking up the above-mentioned semiconductor wafer with the above-mentioned interface layer from the layer of the adhesive layer of the wafer processing belt. "::=For wafer processing In the belt, the base film is composed of a thermoplastic cross-linked resin having a Vicat softening point of 5 kinetics, and it can be used as the following crystals due to the heat collection (4). The step of extending the sub-layer of the tool layer exhibits sufficient shrinkage in the heat shrinkage step, and 14 201202382 does not cause a problem due to slack after the heat shrinkage step. That is, since the Vicat softening point is a thermoplastic crosslinked resin having a softening point of 50 ° C or more and less than 90 ° C, it can be uniformly spreadable for the step of dividing the adhesive layer by stretching, and is heated. A wafer processing belt that exhibits sufficient shrinkage in the shrinking step. Further, since the stress due to the heat shrinkage is as large as 9 MPa or more, it can be used as a wafer processing belt which does not cause a problem due to slack after the heat shrinkage step. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 is a cross-sectional view showing a state in which a wafer for processing wafer 1 is attached to a semiconductor wafer W according to an embodiment of the present invention. The surface protection tape 14 for protecting the circuit pattern is bonded to the circuit pattern forming surface (wafer surface) of the semiconductor wafer w by the back surface polishing step of grinding the wafer back surface. Further, the wafer processing tape is bonded to the back surface of the semiconductor wafer W. The wafer processing tape 10 of the present invention is an extendable tape used when the adhesive layer 13 is divided along the wafer by stretching. The wafer processing belt 1 has an adhesive layer 12 having a substrate film 1.1, 5 and a substrate film 11, and an adhesive layer 12 is disposed on the adhesive layer 12, and the adhesive layer 13 3 and an adhesive layer are provided. 13 is attached to the back side of the semiconductor wafer W. Further, the respective layers may be previously cut (precut) into a predetermined shape in accordance with the use of the steps or means. Further, the wafer processing belt of the present invention includes a state in which the wafer is cut for each wafer, and a long sheet in which a plurality of tapes for processing the Xuanyuan round are formed. The form of the roll shape Hereinafter, the structure of each layer is demonstrated. <Base film> 15 201202382 The base film 11 is composed of a thermoplastic crosslinked resin having a Vicat softening point of 5 〇 ° C or more and less than 90 t as defined in JIS K7206. By using the base film n having such a configuration, the wafer processing belt 10 which can be used for the step of extending the adhesive layer 13 and which has uniformity and isotropic expansion can be realized. Further, since the cross-linking resin has a larger restoring force against stretching than the non-crosslinked resin, the shrinkage stress at the time of softening the resin in the stretched state after the stretching step is large, and can be made by The heat shrinkage eliminates the looseness produced by the tape after the stretching step, and enables the tape to be tightly held and stably held between the respective semiconductor wafers 15. Further, in general, in the heating step after the stretching step, the temperature of the belt is 50t to 9 (the degree of rc, so if the softening point is excessively higher than the range, it is difficult to sufficiently eliminate the relaxation, and if the softening point is too low, There is a risk of banding and melting. The above thermoplastic crosslinked resin is limited to 5 (rc or more and less than 9 Gt, according to JIS K7206, and (4) is limited; #ethylene-(meth)acrylic acid An ionic polymer resin obtained by crosslinking a methacrylic acid _(methyl) acrylic acid in a metal group, which is suitable for an extension step in terms of uniformity of the hook, and is crosslinked by The method has the advantages of strong resilience when heated, and is also particularly suitable for the step of eliminating the slack of the belt generated in the stretching step. Moreover, the molecular chain of the above ionic polymer resin does not contain gas, so even after use In the incineration of the excess belt, there is no dioxin or its analog, that is, vaporized aromatic hydrocarbons. The environmental burden is also small. The metal ions contained in the above ionic polymer resin can be any one. Zinc ion is preferred because of its low elution property, especially from the viewpoint of low contamination. / 16, 201202382 The above thermoplastic crosslinked resin, in addition to the above ionic polymer resin, has a specific gravity of 0.910 or more. The low-density polyethylene of Daban 93() or the ultra-low-density polyethylene irradiated by G.91G is suitable for cross-linking. The thermoplastic cross-linked resin is due to cross-linking and non-crosslinking. The cross-linking site coexists in the resin, so it has a certain uniform spreadability, so it is suitable for the above-mentioned extension step 'and' has a strong restoring force when heated, and this aspect is also particularly suitable for eliminating the loose band produced in the stretching step. His steps. By appropriately adjusting the amount of electron beam irradiated to low-density polyethylene or ultra-low-density polyethylene, the Vicat softening point is 5 〇 or more and less than 9 〇艽 and has sufficient uniform expansion. Further, the above-mentioned electron beam crosslinked polyethylene molecular chain is not contained in the composition of the molecular chain, and therefore, even if it is incinerated after use, it does not produce dioxin or its analog. The environmental burden of the incense is also small. The above-mentioned low-density polyethylene or ultra-low-degree polyethylene is exemplified by hpan P(), manufactured by iychem Corporation, etc. The above thermoplastic cross-linked resin, in addition to the above-mentioned ions In addition to the polymer resin or the electron beam crosslinked polyethylene, it is also suitable to crosslink the ethylene-acetic acid ethylene copolymer by irradiating an electron beam. The thermoplastic crosslinked resin has a higher heating time. Strong resilience, this aspect is particularly suitable for eliminating the step of extending the step: the band produced in the middle. By appropriately adjusting the amount of electron beam, the Vicat softening point can be obtained above 耽 and less than 9〇t and A resin having sufficient uniformity of expansion. The molecular chain of ethylene-acetic acid B-polymer which is cross-linked by electron beam cross-linking also contains no gas, so that the excess band is incinerated even after use. The treatment will not produce dioxin or its class, 201202382, which is a gasified aromatic hydrocarbon-vinyl acetate copolymer made by Ultrathene, etc., and the environmental burden is also small. An example of the above-mentioned ethylene may be exemplified by japan Polychem, and in the example shown in 11 1 , the base film " is a single layer, but it is not assumed that the towel may have two or more Vicat softening points. The thickness of the multilayered constitutive material film 11 of two or more layers formed by laminating the plastic resin and the crosslinked resin is not particularly limited, but is included in the expansion step of the wafer processing belt 1〇. The thickness of the strength of the filling blade which is easy to stretch and does not break, preferably 50 um to 2 〇〇, more preferably 100 um to 150 um, the manufacturing method of the 胄 11 layer substrate , 11 can be used Methods such as extrusion methods and lamination methods are known. When the lamination method is used, the interlayer may also be interposed with an adhesive. The adhesive may be a previously known adhesive. <Adhesive Layer> The primer layer 12 can be formed by applying an adhesive to the base film u. In the case of the wafer processing, the adhesive layer 12 of the wafer processing is not particularly limited to the case of the adhesive layer 12 having the following characteristics: the degree of failure such as the wafer scattering when the adhesive layer 13 is not peeled off during the cutting is maintained. Sex, or pick up. "People's 1 layer 13 is easier to peel off. In order to improve the picking after cutting, the "two! agent layer 12 is preferably energy line hardening, and preferably after hardening and the carrier layer 1 3 stripped material. For example, the 'invention of the present invention preferably contains a compound (A) having an energy ray-curable carbon-carbon double bond having a polyisomeric value in the molecule and a selected from the group of isocyanic acid, r: 咿枭& m ^ melamine-formaldehyde resin, and epoxy resin to 18 201202382) A compound obtained by addition reaction of one compound. Here, the moon and moon lines are such as ultraviolet rays or ionizing radiation such as electron beams. Hereinafter, the compound (A) which is one main component of the adhesive layer 12 will be described. The preferred introduction amount of the energy ray-curable carbon-carbon double bond of the compound (A) is preferably iodine value of 0 5 to 20, more preferably 〇 8 to 1 (if the iodine value is 0.5 or more, The effect of reducing the adhesion after the energy ray irradiation is obtained, and if the iodine value is 20 or less, the fluidity of the adhesive after the energy ray irradiation is sufficient, and the wafer processing belt 1 〇 expands the wafer to obtain a sufficient gap. Therefore, it is possible to suppress the problem that image recognition of each wafer at the time of pickup becomes difficult. Further, the compound (A) itself has stability and is easy to manufacture. The glass transition point of the compound (A) is preferably 70 ° C. 〜0. (:, more preferably from 66 ° C to 281. If the glass transition point is -7 (TC or more, the heat resistance to heat generated by irradiation with the energy ray is sufficient, and if it is 〇C or less) 'The effect of preventing scattering of the semiconductor wafer after dicing of the wafer having a rough surface condition can be obtained. The above compound (A) can be produced by any method, and for example, an acrylic copolymer and an energy ray-curable carbon-carbon double bond can be used. a mixture of compounds; a functional group-based acrylic copolymer or a functional group-containing mercaptoacrylic copolymer (A1), which reacts with a compound (A2) having a functional group reactive with the functional group and having an energy ray-curable carbon-carbon double bond Wherein the compound (A1) having a functional group may be a monomer (A1 - i ) having an energy ray-curable carbon-carbon double bond such as an alkyl acrylate or an alkyl methacrylate; Energy line hardening carbon-carbon double bond and 201202382 monomer having functional group (A1 - 2) ΟΒ J is derived from the public. Early body (Αΐ_ι), can be cited as: the carbon number of the alkyl chain is 6~ Τ ζ Capsules of hexyl acrylate, acrylic acid, acrylic acid, 2-octyl octyl octyl acrylate, decyl acrylate, decyl acrylate, biting ρ and carbon chain a monomer of 5 or less, that is, amyl acrylate, n-xyl butyl acrylate, isobutyl acrylate, ethyl sulfonium acrylate, acetonic acid vinegar, or zebra 00 乂 f Ester, etc. Monomer (A1 1), ^吏The larger the carbon number, the lower the glass transition point, and the ability to produce the desired glass transition point. In addition to the glass transition point, & improve compatibility and various properties, and can also be used in monomer a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene or acrylonitrile is blended in a range of 5% by mass or less based on the total mass of (Al 1). The functional group contained in the precursor (A1 - 2 ) Examples thereof include a carboxyl group, a hydroxyl group, an amine group, a cyclic acid anhydride group, an epoxy group, and an oleic acid vine group. Specific examples of the monomer (ai-2) include acrylic acid, methacrylic acid, cinnamic acid, and clothing. Hydronic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates - 2-hydroxyalkyl methacrylates, diol monoacrylates, diol monomethacrylic acid Esters, N-methylol acrylamide, N-hydroxymethyl decyl acrylamide, allyl alcohol, N-alkylaminoethyl acrylate, methyl acrylate-N-alkylamine Ethyl ethyl esters, acrylamides, mercapto acrylamides, maleic anhydride, itaconic anhydride, Butenic anhydride, phthalic acid liver 'epoxypropyl acrylate, glycidyl methacrylate, allyl epoxide propyl ether, part of the isocyanate group of the polyisocyanate compound by having a hydroxyl group Or a carboxyl group and an energy ray-curable carbon-carbon double bond monomer 20 201202382 and an amine esterified product. The functional group used in the compound (A2), when the compound (a1), that is, the monomer (A1-2) has a functional group of a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, an epoxy group, an isocyanate may be mentioned. When it is a hydroxyl group, a cyclic acid anhydride group, an isocyanate group, etc. are mentioned, and when it is an amine group, an epoxy group, an isocyanate group etc. are mentioned, and when it is an epoxy group, carboxyl group and 裱 are mentioned. Examples of the acid anhydride group, the amine group and the like are the same as those exemplified in the specific examples of the monomer (A1-2). In the reaction of the compound (A1) with the compound (A2), an unreacted S group remains, whereby properties such as an acid value or a hydroxyl value can be produced. In the synthesis of the compound (A), the organic solvent used in the solution polymerization may be a ketone-based, vinegar-based, alcohol-based or aromatic-based compound, preferably toluene, ethyl acetate or isopropanol. Benzyl sulphate ethyl sirengsu, propyl, ketone; ^ 7#, j τ ke ethyl ketone 4 is generally a good solvent for 糸t δ acrylate and has a boiling point of 〇〇, 2 ^ with a point of 60c ~12〇c solvent, polymerization initiator* use α,α丨-azobisridinium 备 备 / thiocrack right m mouse double, nitrile 荨 azobisindole, benzoyl peroxide f醯Special organic peroxide system can be used as a free supply. In this case, the catalyst, polymerization inhibitor, M ^ Φ ν can be used as needed to obtain the desired molecular weight from the polymerization temperature and polymerization time. The amount of butyl, preferably A # # and, regarding the regulation of the molecule is preferably the use of mercaptan, the gasification of the four gasification carbon system is not limited to solution polymerization, also, the other method. ^Block & suspension, suspension polymerization, etc. (A), but in the present invention, the combination of 1 〇〇 之 β Λ 夂 。. If it is less than 30, the molecular weight of the compound (A) obtained as described above is preferably 300,000 to 21, 2012,02,382,000', and the set cohesive force is small, and the wafer is likely to be displaced when the wafer is diced, and image recognition becomes difficult. In order to prevent the offset of the wafer as much as possible, the molecular weight is preferably 400,000 or more. Further, when the molecular weight exceeds 10,000, gelation may occur during the synthesis and during coating. Further, the molecular weight in the present invention is a mass average molecular weight in terms of ethylene. The right compound (A) has a hydroxy group value of 5 to 1 〇, and the H group can further reduce the risk of picking up errors by reducing the adhesion after the energy ray irradiation. Therefore, preferably, the compound is preferred. (A) A COOH group having an acid value of 〇5 to 30. Here, if the hydroxyl value of the compound (A) is too low, the effect of lowering the adhesion after the irradiation of the Moon & line is insufficient, and if it is too high, the fluidity of the adhesive after the irradiation of the energy ray is damaged. tendency. Further, if the acid value is too low, the effect of improving the recovery property of the belt is insufficient, and if it is too high, the fluidity of the adhesive tends to be impaired. Next, the compound (B) which is another main component of the adhesive layer will be described. The compound (B) is a compound selected from the group consisting of polyisocyanates, melamine-formaldehyde resins, and epoxy resins, and may be used singly or in combination of two or more. This compound (B) acts as a crosslinking agent, and the crosslinking structure obtained by the reaction with the compound (A) or the substrate film can improve the compound (A) and (B) after the application of the adhesive. The cohesive force of the adhesive of the main component. The polyisocyanate is not particularly limited, and examples thereof include 4,4, diphenyldecane diisocyanate, toluene diisocyanate, phenylenediethylene diisocyanate, 4,4' diphenyl ether diisocyanate, and 4 ,4,-[2,2-bis(4-phenoxy)propene]monoisocyanate and other aromatic isocyanate 'hexamethylenediyl diiso 22 201202382 cyanate, 2,2,4 tridecyl Hexamethylene diisocyanate, isophor _ diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4, dicyclohexyl decyl diisocyanate, lysine diisocyanate, lysine III Specifically, for example, CORONATE L (trade name, manufactured by Nippon Polyurethane Co., Ltd.) or the like can be used. Specifically, it is possible to use Nik alac MX-45 (trade name, manufactured by SANWA CHEMICAL Co., Ltd.), MELAN (manufactured by Hitachi Chemical Co., Ltd.), and the like. As the epoxy resin, TETRAD-X (trade name "Mitsubishi Chemical Co., Ltd.") can be used. In the present invention, it is particularly preferred to use a polyisocyanate. The amount of the compound (B) to be added is preferably selected in a ratio of from 1 to 10 parts by mass, preferably from 4 to 3 parts by mass, based on the mass of the compound (A). By selecting in this range, it is possible to form an appropriate cohesive force ', and the crosslinking reaction is not carried out violently. Therefore, workability such as blending or coating of the dot is excellent. Further, in the present invention, it is preferred that the adhesive layer 12 contains a photopolymerization initiator (C). Adhesive agent 12 Φ ήί·人>> A , , u The photopolymerization initiator (C) contained in the dry is not particularly limited, and may be used before p 4 to κ π. For example, benzophenone, 4,4'-dimethylaminodibenzoate, winter 4,4~~diethylaminodibenzophenone, 4,4, ——gas-a formazan Etc. _ ^田ίΐξρ] JJ search - ketones, acetophenone, diethoxyacetophenone and other acetophenones, 2-ethylamine, when Anthraquinones, 2—gas-9-oxosulfanyl Yamaguchi, loyalty to female scented ether, benzoin isopropyl ether, diphenylethylenedione: 2,4'5; triaryl imidazole dimer The dimer abridin compound or the like can be used singly or in combination of two or more kinds. The amount of (C) 23 201202382 added is preferably 〇 based on 100 parts by mass of the compound (A). i to 10 parts by mass, more preferably 0.5 to 5 parts by mass. Further, in the energy ray-curable adhesive used in the present invention, an adhesion-imparting agent, an adhesion adjusting agent, a surfactant, or the like may be blended as needed, or Other modifiers, etc. Further, an inorganic compound filler may be appropriately added. 'The thickness of the adhesive layer 12 is at least 5/zm, more preferably 10/m or more. In addition, the 'adhesive layer Is a multilayer laminate composed of the composition of the respective layers may be the same 'also respectively different. <Binder Layer> The adhesive layer 13 is as follows: after the semiconductor wafer is bonded and diced, 'when the wafer is picked up' and the adhesive layer 12 is peeled off and attached to the wafer' is used to fix the wafer to An adhesive when the substrate or lead frame is used. In the semiconductor wafer processing, the adhesive layer 13 may be laminated on the wafer processing tape 1 in which the adhesive layer 12 is laminated on the base film 11, or may be bonded to the semiconductor wafer. The adhesive agent is not particularly limited as long as it is a film-like adhesive which is generally used for cutting a polycrystalline adhesive tape, and is preferably an acrylic adhesive, an epoxy resin/phenol resin/acrylic resin mixed adhesive. The thickness thereof can be appropriately set to 'the extent of preferably 5 to 100 to 100 m. In the wafer processing belt 10 of the present invention, the adhesive layer 13 may be directly or indirectly laminated on the base film 11 by filming the adhesive layer 13 in advance (hereinafter referred to as a bonding film). form. The temperature at the time of lamination is preferably such that a linear pressure of 〇.〇iN/m~ΙΟΝ/m is applied in the range of 10 ° C to 10 ° C. In addition, the 'adhesive film may be formed with the adhesive layer 13 on the spacer. 24 201202382 2 may be used to peel the spacer after lamination, or directly used as a protective film of the wafer tape 10 when the semiconductor wafer is bonded. Strip it off. Then, the film can be laminated on the entire surface of the (four) agent layer 12, and the Μ is first cut into a shape corresponding to the bonded semiconductor wafer (pre-filming. When the laminate has an adhesive film corresponding to the semiconductor wafer = Figure 1 It is shown that the adhesive layer 13 is present in the portion where the semiconductor wafer w is bonded, and the adhesive layer 12 is not present in the portion of the bonded annular frame 20. In general, the adhesive layer 13 is not easily The body is peeled off, and therefore, by using the pre-cut back film, the following effects can be obtained: the ring, the frame 2〇 and the adhesive layer 12 are bonded, and the % frame 20 is not easy when the tape is peeled off after use. Residual paste. ' <Application> The use of the wafer processing belt according to the present invention is not particularly limited as long as it is used in a method including at least a semiconductor device in which the step of dividing the interface by 13 is extended. For example, the manufacturing method (Α) of the semiconductor device in the following manufacturing method (Α) to (9) includes the following steps: U) attaching a protective tape to a surface of a semiconductor wafer on which a circuit pattern is formed; (b) grinding the back surface polishing step of the back surface of the semiconductor wafer; (C) bonding the wafer processing to the back surface of the semiconductor wafer in a state where the semiconductor wafer is heated to 7 〇 to 8 (TC) (b) peeling the surface protection tape from the surface of the semiconductor wafer; 25 201202382 irradiating the predetermined portion of the semiconductor wafer with laser light to form a change due to multiphoton absorption inside the wafer (7) extending the wafer processing tape, thereby dividing the semiconductor wafer and the adhesive layer along the dividing line to obtain a plurality of half of the adhesive layer a conductor wafer; (g) heating and shrinking a portion of the wafer processing tape that is not overlapped with the semiconductor wafer; thereby eliminating slack generated in the extending step and maintaining a spacing of the semiconductor wafer; and (1) The adhesive layer of the wafer processing belt picks up the semiconductor wafer with the adhesive layer. The manufacturing method (B) of the semiconductor device includes the following steps: (4) bonding the surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed; (b) grinding the backside grinding step of the back side of the semiconductor wafer; (c) heating the semiconductor wafer to 7〇 <t~8〇. In the state of the semiconductor wafer, the adhesive layer of the wafer processing tape is bonded to the back surface of the semiconductor wafer; (d) the surface protection tape is peeled off from the surface of the semiconductor wafer; (e) from the surface of the semiconductor wafer The dividing line illuminates the laser light to be divided into individual semiconductor wafers; (f) by extending the wafer processing tape, the adhesive layer is cut corresponding to each of the semiconductor 曰a sheets, thereby obtaining the above-mentioned adhesive layer a plurality of semiconductor wafers of the agent layer; 26 201202382, g) heating and shrinking the β-segment of the wafer processing tape which is not overlapped with the semiconductor wafer, thereby eliminating slack generated in the extending step and maintaining The semiconductor wafer is spaced apart; and (h) the adhesive layer from the wafer processing tape is picked up to pick up the semiconductor wafer with the adhesive layer. The manufacturing method (c) of the semiconductor device includes the following steps: (1) a semiconductor wafer surface mount tape on which a circuit pattern is formed; (b) a back grinding step of grinding the back surface of the semiconductor wafer; (c) a semiconductor wafer has been formed Heating to 7 (rc~8〇. 〇, the back layer of the wafer processing tape is bonded to the back surface of the semiconductor wafer; (d) the surface protection tape is peeled off from the surface of the semiconductor wafer; Cutting the semiconductor wafer along the dividing line by using a dicing blade to be divided into individual semiconductor wafers; (to extend the above-mentioned adhesive layer by extending the above-mentioned wafer plus 4 strips corresponding to each of the semiconductor wafers, thereby obtaining a plurality of semiconductor wafers having the above-mentioned adhesive layer; (g) heating and shrinking portions of the wafer processing tape that are not overlapped with the semiconductor wafer, thereby eliminating slack generated in the extending step; Maintaining the interval between the semiconductor wafers; and (h) picking up the semiconductor wafer with the adhesive layer from the adhesive layer of the wafer processing tape. D) includes the following steps: 27 201202382 (a) using a dicing blade to cut a semiconductor wafer on which a circuit pattern is formed along a predetermined line of the dividing line at a depth not exceeding the thickness of the wafer; (b) on the surface of the semiconductor wafer (5) a back grinding step of grinding the back surface of the semiconductor wafer into individual semiconductor wafers; (d) heating the semiconductor wafer to 7 〇 <5 (:8), the adhesive layer of the wafer processing tape is bonded to the back surface of the semiconductor wafer; (e) the surface protection tape is peeled off from the surface of the semiconductor wafer; Extending the wafer processing tape to cut the adhesive layer corresponding to each of the semiconductor wafers to obtain a plurality of semiconductor wafers with the adhesive layer; (g) the wafer processing tape The portion not overlapping with the semiconductor wafer is heated to shrink, thereby eliminating the slack generated in the extending step, maintaining the interval between the semiconductor wafers; and () the adhesive layer from the rounding processing belt, and picking up In the method of manufacturing the semiconductor device (Α) to (D), a wafer processing method having a base film, an adhesive layer, and an adhesive layer is used. In the case where the tape has only the base film and the adhesive W layer, in the process of bonding the B-circle processing tape to the semiconductor wafer, Jiang Shunshitian is placed on the back surface of the semiconductor wafer via the adhesive layer. Bonded wafer Add band <Usage Method> 28 201202382 Manufacturing The tape processing tape 10 of the present invention is applied to the above-described method of using the tape of the semiconductor package $' (A). Referring to FIG. 2 to the description of the semiconductor I . First, as shown in Fig. 2, the surface protection L of the magnetic conductor wafer w on which the circuit pattern is formed is composed of ultraviolet curable components. 'When the back surface polishing of the back surface of the semiconductor wafer W is performed, the polishing step is completed. As shown in FIG. 3, the semiconductor wafer W is placed downward and the semiconductor wafer w is placed on the wafer mounter (wafer). Γ:Γ;) After the heater table 25 is pressed, there are two bands 10 on the back of the semiconductor crystal. The wafer processing belt used here is a 10-layer laminated film; the shape of the semiconductor wafer w corresponding to it (pre-cut) = film: on the surface to which the semiconductor wafer W is bonded, the Q of the adhesive is exposed The exposed adhesive layer 12 is provided around the domain: the exposed adhesive of the work tape 10 is partially bonded to the old face of the semiconductor 2: and the exposed adhesive layer 12 around the adhesive layer 13 is formed into a ring frame. 20 fits. At this time, the heater stage 25 is set to 7. C 8 0 C, thereby performing heat bonding. Rail:: The semiconductor wafer W to which the wafer processing tape is bonded is loaded from the ', ', and 5 ports. As shown in Fig. 4, the wafer processing tape is turned to the side of I: It is placed on the wafer adsorption stage 26. Then, from the upper side of the semiconductor wafer W which is adsorbed and fixed to the adsorption: for example, an ultraviolet light source π is used, and ultraviolet rays of 100 mJAV are irradiated on the side of the surface protection tape to make the adhesion of the surface protection tape 14 to the semiconductor wafer w/ Drop, = surface peeling surface protection tape of semiconductor wafer w 14〇曰29 201202382 Then, as shown in FIG. 5, the predetermined divided portion of the semiconductor wafer w is irradiated with laser light, thereby forming a plurality of inside the semiconductor wafer w The modified region produced by photon absorption is 3〇. Then, as shown in FIG. 6(a), the wafer processing tape 1 to which the semiconductor wafer w and the annular frame 20 are bonded is placed on the stretching device with the substrate film 1 facing downward. Platform 21. In the figure, reference numeral 22 denotes an ejector member having an empty cylindrical shape in the extending device. Then, as shown in Fig. 6(b), in the state in which the annular frame 2 is fixed, the ejector member 22 of the extension device is raised by ±, so that the wafer is twisted; κ is extended. The elongation condition is, for example, 10 to 50 mm/see, and the elongation (the amount of pushing) is, for example, 5 to 25 mm. By thus stretching the wafer processing tape 1 in the radial direction of the semiconductor wafer W, the semiconductor wafer w is divided in units of wafers starting from the modified region 3〇. At this time, the adhesive layer 13 is attached to the back surface of the semiconductor wafer W, and the stretching (deformation) due to the stretching is suppressed, so that no breakage occurs; but the position between the wafers c is due to The tension generated by the extension is concentrated, so that breakage occurs. Therefore, the adhesive layer 13 is also divided together with the semiconductor wafer w. Thereby, a plurality of semiconductor wafers C with the adhesive layer 13 attached thereto can be obtained. Then, as shown in Fig. 7, the following steps are carried out: The ejector member 22 is restored to its original position, and the slack of wafer processing occurring in the previous extending step is eliminated, thereby keeping the interval of the semiconductor wafer c therebetween. The enamel processing belt has a semiconductor wafer of 1 Å. The annular area I between the two frames is sprayed 50 using the warm air nozzles 29. 〇~9 (TC foam® η 吏 base film 11 is heated and shrunk so that the 30 201202382 wafer processing belt has a 1 〇 tight end. Thereafter, the adhesive layer 12 is subjected to energy ray hardening treatment or heat hardening treatment, etc. Adhesion of the adhesive layer 12 to the adhesive layer 13. Then, as shown in FIG. 8, the semiconductor wafer C is pushed from the back surface of the base film 11 (the surface on which the semiconductor wafer is not bonded) by the ejector pin 41, and The semiconductor wafer c is picked up by adsorption by the adsorption collet 42. In the above-described method for manufacturing a semiconductor device, the substrate mu composed of the hot plastic-plastic cross-linking has a large recovery from stretching applied during stretching, and the dimension The softening point of the card is also low, so that it is easy to shrink when heated. Therefore, it can be preferably applied to the following steps: the wafer processing is removed by the extension step of the splitting agent layer by heat shrinkage by # Steps to make the belt tight. [Embodiment] Then, the embodiment and the comparative example for clarifying the effect of the hair & month are described in detail, and the invention is not limited to the present invention. These examples. Embodiments 1 to 5 In the comparative example 丨~7 ^ m, the Japanese yen processing belt 1 () is used to measure the use of the bases shown in Table 1 and Table 2. The other components constitute the adhesive of the adhesive 曰12. The composition of the agent, the structure of the composition of the adhesive layer 13 and the composition of the Japanese yen processing belt are the same. In addition, in the following %, the density is based on JISK7ll2it / The following is the monthly difference 、 ~, 仃 measured 疋, the melting point is determined according to DSC (measurement of production and heat measurement) 吟 (1) sample production (1.1) Example 1 (substrate 臈Production of 11) Ethylene-methacrylic acid which is formed by radical polymerization method - A 31 201202382 ethyl acrylate (mass ratio 8: 1: 1) terpolymer zinc ion polymer a (density 0.96) Resin beads with g/cm3, zinc ion content of 4% by mass, gas content of less than 1% by mass, Vicat softening point of 5 6 °C, and melting point of 8 6 °C are melted at 140 ° C. The extruder formed it into an elongated film having a thickness of 1 μm, thereby producing a supporting substrate (adhesive composition 1) constituting the substrate film 11. Preparation) Free radical polymerization of butyl acrylate, 2-hydroxyethyl acrylate and acrylic acid to obtain an acrylic copolymer (molecular weight: 60,000, a value of 4-7 mgK〇H/g, an acid value of 〇_2 mgKOH) /g). As a photopolymerizable cured product, 30 parts by mass of a ruthenium-based propylene-based triacrylate is added as a polyisocyanate CORONATE L (曰本) 2 parts by mass of IrgaCUre 184 (manufactured by Ciba-Geigy Co., Ltd., Japan), which is a photopolymerization initiator, was dissolved in ethyl acetate and stirred to prepare an adhesive composition 1. The composition of the subsequent composition is a varnish-type epoxy resin (having an epoxy equivalent of 197, a molecular weight of 1200, a softening point of 7 〇t) as an epoxy resin, and 5 parts by mass as a decane coupling agent. 15 parts by mass of methoxymethoxy decane, 3 parts by mass of γ-ureidopropyltriethoxy decane, and 3 parts by mass of alumina filler having an average particle diameter of 16 Å, cyclohexanone is added and added The feed was combined and then kneaded for 90 minutes using a bead mill. Further, an acid resin (having a molecular weight of 20,000 and a molecular value of 3.5 mg KOH/g) is synthesized by radical polymerization of acrylic acid with a weak acid; The adhesive composition, as well as the C0R0NATE L 丨 mass fraction as a hardener, was mixed to prepare an adhesive composition 丨. See (Production of Wafer Processing Tape 10) On the support substrate 构成 constituting the base film 11, the adhesive composition 丨 is applied so as to have a thickness of 〇# m after drying, and dried under i 1 3 In an minute, an adhesive sheet in which the adhesive layer 12 is formed on the base film n is produced. In addition, the adhesive composition i is applied to the (four) lining composed of the polyethylene terephthalate film which has been subjected to release treatment after being dried to a thickness of 2 Å. It was dried at i 1 () ° c for 3 minutes to prepare an adhesive film on which the adhesive layer 13 was formed on the peeling pattern. Then, the adhesive sheet is cut into a shape as shown in Fig. 3 and the like which can be attached to the annular frame 20 so as to cover the opening. Further, the film is cut by the bonding film A, and the shape of the back surface of the semiconductor wafer w can be covered as shown in Fig. 3 or the like. Then, the adhesive layer 2 side of the adhesive sheet and the adhesive layer 13 side of the adhesive film are attached as shown in FIG. 3 and the like so as to form a portion where the adhesive layer 12 is exposed around the adhesive film. Thus, a wafer plus X tape is used. Thus, the wafer processing tape 10 in which the support substrate constituting the substrate 貘11, the energy ray-curable adhesive layer 12, and the adhesive layer U were sequentially laminated was used as a sample of the example. (1.2) Example 2 (Preparation of base film 11) A zinc ion polymer b (density of ethylene-methacrylic acid (mass ratio: 9.5:0.5) binary copolymer synthesized by a radical polymerization method 〇.95g/cm3' zinc ion content is 2% by mass, chlorine content is less than 】% by mass, 33 201202382 Vicat softening point is 8lt 'Hyun point is 1 sail) resin beads at 14 (rc under squeezing) The support is formed into a long film having a thickness of 1 Å, whereby the support substrate 2 constituting the base film 11 is produced. The support substrate 2 constituting the base film 11 is used as the adhesive composition 1, and then The composition of the wafer was prepared by the same method as in Example i as a sample of the film of Example 2. (1.3) Example 3 (Preparation of the substrate film 11) by a metallocene polymerization method ( Metallocene polymerization) synthesized ultra-low density polyethylene ULDPEa (density of 〇.9〇g/cm3, chlorine content less than 1% by mass] Vicat softening point of 72〇c, melting point of 9 (rc) resin beads Melt under i4〇r, use an extruder to form a long film with a thickness of 00v m, and then use medium energy electron beam The apparatus irradiates an electron beam with an acceleration voltage of 1 MeV and an irradiation amount of 20 Mrad, thereby producing a support substrate 3 constituting the base film 11. The support substrate 3, the adhesive composition 1, and the substrate film 1 are formed using a hai. The wafer composition tape 10 was produced by the same method as in Example 1 as the sample of the sample of Example 3. (1.4) Example 4 (Preparation of the substrate film 11) Polymerized low density polyethylene LDPEb (density of 0.91 g / cm3, gas content of less than 1% by mass, Vicat softening point of 8 1 °C 'melting point of 102 ° C) resin beads at 140 ° C After melting, an extruder is used to form a film having a thickness of 100, and then a medium-beam electron beam is used to add an electron beam to an acceleration voltage of 1 MeV and an irradiation amount of 2 〇Mrad by using a medium energy electron beam plus 34 201202382 speed device, thereby forming a substrate film π. Supporting substrate 4. 9 Using the supporting substrate 4, the adhesive composition i, and the adhesive composition constituting the substrate film 11, the wafer processing tape 10 is produced by the same method as the embodiment. This was taken as a sample of Example 4. (1.5) Example 5 (Preparation of substrate film 11)乙烯 Ethylene-vinyl acetate (mass ratio: 9:1) copolymer EVAa (density of 〇93g/cm3, gas content of less than 1% by mass, Vicat softening point of 69t) The tree of the point (10)) is melted at 140 ° C, and an elongated film having a thickness of 1 〇〇 is formed by an extruder, and then a medium-energy electron beam accelerator is used to accelerate the voltage (10) " The electron beam is irradiated, whereby the support substrate 5 constituting the substrate film is produced. Using the support substrate adhesive composition and the adhesive composition constituting the base film η, the wafer processing tape 10 was produced by the same method as the example, and this was used as the sample of Example 5. . (1·6) Comparative Example 1 (Preparation of Substrate Film 11) Ethylene-methyl acrylic acid (having a mass ratio of 9.5 . 〇. 5 ) of a binary copolymer synthesized by a radical polymerization method The zinc ion polymer bismuth (having a density of g/cm zinc ion content of 1% by mass, a gas content of less than i% by mass, and a Vicat softening point of 8 〇t 'melting point of 9 rc) is a resin bead. c is formed into an elongated film having a thickness of 100/zm by an extruder, whereby the support substrate 6 constituting the base film 11 is produced by 35 201202382. Using the support substrate 6 constituting the base film 11, the adhesive composition, and the adhesive composition, the wafer processing tape 10 was produced by the same method as the example, and this was used as the comparative example i. sample. (1.7) Comparative Example 2 (Preparation of base film 11) Ethylene-vinyl acetate (mass ratio: 9:1) copolymer EVAa (density: g93 g/(10) 3 ) was synthesized by a radical polymerization method, and the gas content was not Up to 1% by mass, Vicat softening point is machine 'Hyun point is 96 The resin beads of <t) were melted at 140 ° C, and an elongated film having a thickness of 1 inch and a claw was formed by an extruder to prepare a support substrate 7 constituting the base film. Using the support substrate 7 constituting the base film U, the adhesive composition i, and the adhesive composition 1, a wafer processing tape 10' was produced in the same manner as in Example 将, which was used as Comparative Example 2. sample. (1. 8) Comparative Example 3 (Preparation of base film 11) Commercially available industrial polyethylene gas a (plasticizer 3 〇 mass%, density 1.45 g/cm 3 'gas content was 568 % by mass, The resin beads having a Vicat softening point of 76 and a melting point of 100 ° C were melted at 14 ° C, and an elongated film having a thickness of 100 /ini was formed by an extruder to thereby form a substrate film. Support substrate 8 of 丨. The wafer processing tape 10 was produced by the same method as in Example 使用 using the support substrate 8 constituting the base film 11, the adhesive composition 1, and the adhesive composition 1' as Comparative Example 3 sample. 36 201202382 (1.9) Comparative Example 4 (Preparation of base film 11) Ultra-low-density polyethylene-ULDPEa synthesized by a metallocene polymerization method (density of 0.90 g/cm3, gas content not up to! mass%, dimension) The resin beads having a card softening point of 72 (:: melting point of 90 ° C) were melted at 14 (rCT, and an elongated film having a thickness of ΙΟΟμηη was formed by an extruder, whereby a supporting base constituting the substrate film 11 was produced. Material 9. Using the support substrate 9 constituting the base film 11, the adhesive composition i, and the adhesive composition 1', the wafer processing tape 10 was produced in the same manner as in Example ,, and this was used as a comparison. Sample of Example 4 (1·10) Comparative Example 5 (Preparation of Substrate Film 11) A low-density polyethylene LDpEb (density of 0.91 g/cm3) synthesized by a metallocene polymerization method was used, and the gas content was not reached! A resin bead having a mass %, a Vicat softening point of 81 C, and a melting point of 102 〇c) is melted at 14 〇t: to form an elongated film having a thickness of 1 〇〇V m by an extruder, thereby producing a composition. The support substrate 1 of the base film 11 is 〇. 'The support substrate 1 〇, the adhesive composition constituting the substrate 臈U The wafer composition tape 10 was produced by the same method as in Example ,, and this was used as a sample of Comparative Example 5. (1.11) Comparative Example 6 (Preparation of the substrate film 11) A low-density polyethylene LDPEc (density of 91.91g/Cm3, chlorine content of less than 1% by mass, Vicat softening point of 37 201202382 96C, melting point of l〇2 ° C) of resin beads synthesized by metal polymerization After melting at i40 ° C, an elongated film having a thickness of 100 / zm was formed by an extruder, and then an electron beam was irradiated with an acceleration voltage of 1 MeV and an irradiation amount of 20 Mrad using a medium energy electron beam acceleration device, thereby fabricating a substrate film. Supporting substrate U of 11. Using the supporting substrate n, the adhesive composition, and the adhesive composition 1 constituting the base film 11, the wafer processing tape 10 is produced by the same method as in Example ,, This was used as a sample of Comparative Example 6. (1 · 1 2 ) Comparative Example 7 (Preparation of base film 11) Low density polyethylene LDPEc (density of 0.91 g/cm 3 ' gas content) synthesized by a metallocene polymerization method Less than i mass. /., Vicat softening point is 96C, melting point is i〇2 °c) Resin beads in 1 4: (: melted, an elongated film having a thickness of 10 μm was formed by an extruder, thereby producing a support substrate 12 constituting the base film 11. The support substrate constituting the substrate film 11 was used. 12. Adhesive composition and adhesive composition 1, a wafer processing tape 10' was produced by the same method as in Example 将 as a sample of Comparative Example 7. (2) Evaluation of the sample (2.1) The amount of increase in shrinkage stress by heating was measured by the method shown below, and a large amount of shrinkage stress was obtained when the wafer processing belts of Examples 丨 to 5 and Comparative Examples 1 to 7 were heated. After the removal of the adhesive layer from the wafer processing belts of Examples 1 to 5 and Comparative Examples -7, the wafer processing tape was processed into a test piece having a size determined in accordance with JIS K7 62. At this time, two kinds of test pieces were produced: the length of the test piece was 38 201202382 degrees (the one in the roll-wound process when the tensile strain was applied to the wafer processing tape was in the extrusion forming step of the support substrate) Squeeze two:: direction (hall direction); the length direction is perpendicular to the winding direction (TD direction) ° then 'for the test piece' use with the addition of "cavity to STR0GRAPH, using m Κ 7162 The side: from the test of the imaginary band of the μ1 μ 1% of the tensile strain after the stretch between the heads: hold - set 'in this state' for heating until the test eight / the degree reaches 7 (rc The process of the process, the process of maintaining the temperature of 1 / knives thereafter, and the shrinkage stress during the return of the test piece to room temperature thereafter are monitored. According to the obtained measurement results, the largest and wideest observed, The value of the force is subtracted from the value of the initial stress immediately before the start of heating, and the amount of increase in the shrinkage stress is obtained. The results of the wafer processing belt of each of the examples and the comparative examples are shown in Table 2 and Table 2. (2.2) Adaptability test for semiconductor processing steps曰According to the method described below, the wafer processing belts of the above-described examples and the comparative examples were subjected to an adaptation test of the following semiconductor processing steps corresponding to the above-described semiconductor device manufacturing method (A). The step of attaching the surface protective tape to the surface of the semiconductor wafer having the circuit pattern. (b) grinding the back surface grinding step of the back surface of the semiconductor wafer. (c) heating the semiconductor wafer to 7〇〇c~8〇°c In the state in which the adhesive layer of the wafer processing tape is bonded to the back surface of the semiconductor wafer, and the annular frame for wafer processing is bonded to the following portion, The adhesive layer of the wafer processing tape is not exposed to the adhesive layer weight 39 201202382. (d) The step of peeling the surface protection tape from the surface of the semiconductor wafer. (e) The predetermined semiconductor wafer The dividing portion irradiates the laser light to form a modified region generated by multiphoton absorption inside the wafer. (f) the above-described wafer processing tape is extended by 1 〇%' along the dividing line cutter Semiconductor crystal And the above-mentioned adhesive layer to obtain a plurality of semiconductor wafers with the above-mentioned adhesive layer. (g) a heating step, that is, a portion of the wafer processing tape that does not overlap with the above-described T-conductor wafer (the presence of a semiconductor The annular region between the area of the wafer and the annular frame is heated to 50t or 7crc or 9(rc, holding "," until it is confirmed by visual inspection that the tape is not slack. In addition, the heating is heated in the heating step. In the case of the above-mentioned heating step, a 10 g weight in accordance with JIS B7609 is placed on the back surface of the substrate film (the surface which is not bonded to the semiconductor wafer), and the amount of the wafer processing tape is measured. The amount of relaxation is less than 5mm. The above-mentioned half (four) wafer of the (four) layer is picked up from the point of the agent layer of the wafer processing. The measurement of the amount of looseness at the end of the round force (g) step is as shown in Fig. 9. In the state of the crystal=working belt (10) in the annular frame 20, the symbol w is placed on the back surface of the substrate film ( The surface of the semiconductor wafer is not bonded to the surface of the semiconductor wafer, and the wafer processing tape is attached to the position where the tape 10 is in a state parallel to the & face of the ring frame 20 (the fifth) The position where the dotted line is not in the middle of each other (the distance of a in circle 9) is heavier. The results of the slack amount and the heating time in the case of using the wafer processing belt of each of the examples and 40 201202382 comparative examples are shown in Tables 1 and 2. (2.3) Pickup success rate With respect to the wafer processing belts of the above-described examples and comparative examples, the yield (pickup success rate) of the last (h) step was evaluated. The results when using the wafer processing belt of each of the examples and the respective comparative examples are shown in Tables 1 and 2. [Table 1] Example 1 2 3 Resin ionic polymer a Ionomer b Electron beam cross-linking ULDPEa It; bl· Crosslinking presence or absence of softening point 56 ° C 81 ° C 72 ° C gas volume less than 1% Less than 1% less than 1% Shrinkage stress increase due to heating Winding direction 10.2MPa ll_2MPa 9.3MPa Direction perpendicular to the winding direction 7.7MPa 8.9MPa 8.3MPa 50°C Time required for heating lOsec 30sec 20sec Heat Relaxation after shrinkage heating 1.2mm 2.0mm 2.7mm Re-bonding in the test junction picking step 0/100 0/100 0/100 Pickup success rate 100% 100% 100% 7 (TC plus heating time required lOsec lOsec lOsec Relaxation after heat shrinkage heating 1.2mm 2.5mm 1.0mm Test junction re-bonding in the pickup step 0/100 0/100 0/100 Fruit picking success rate 100% 100% 100% 90° (: Plus Time required for heating lOsec lOsec lOsec Relaxation after heat shrinkage heating 0.8mm 1.0mm 1.2mm Test junction re-bonding in the pickup step 0/100 0/100 0/100 Fruit picking success rate 100% 100% 100% 41 201202382 Example 4 5 Resin Electron Beam Crosslinking LDPEb Electron Beam Crosslinking E VAa substrate cross-linking with or without softening point 81 ° C 69 〇 C gas volume less than 1% less than 1% due to heating winding direction lO.OMPa ll.OMPa shrinkage stress increase amount perpendicular to the winding direction Direction 8.6MPa 9.1 MPa Time required for heating and heating at 50°C 30sec 20sec Relaxation after heating 2.5mm 2.0mm Result Re-bonding in the pickup step 0/100 0/100 Pickup success rate 100% 100% 70°C Heat shrinkage test result Time required for heating 20 sec lOsec Relaxation amount after heating 2.0 mm 2.0 mm Re-bonding in the pickup step 0/100 0/100 Pickup success rate 100% 100% 90 °C heat shrinkage test result Heating station Time required lOsec lOsec Relaxation after heating 2.0mm 1.5mm Re-bonding in the pickup step 0/100 0/100 Pickup success rate 100% 100% 42 201202382 [Table 2] Comparative Example 1 2 3 Substrate resin ion Polymer C EVA a Polyethylene Ethylene a Crosslinking with or without softening point 80 ° C 69 ° C 76 〇 C gas volume less than 1% less than 1% 56.80% shrinkage stress due to heating increase winding direction 8.2 MPa 4_2MPa 9.3MPa perpendicular to the winding direction Direction 6.7MPa 4.2MPa 7.6MPa 50°C heating shrinkage test result Heating time 120sec 300sec 30sec Relaxation after heating 3.2mm 4.2mm 3.0mm Re-bonding in the pickup step 1/100 7/100 1/100 Pickup success rate 99% 93% 99% 70t Heat shrinkage test result Heating time required 50sec 240sec lOsec Relaxation after heating 2.1mm 4.0mm 3.0mm Re-bonding in the pickup step 0/100 10/100 0/100 Pickup success rate 100% 90% 100% 90 °C heat shrinkage test results The time required for heating 30sec 150sec lOsec Relaxation after heating 3.8mm 3.8mm 1.2mm Re-bonding in the pickup step 0/100 9/100 0 /100 Pickup success rate 100% 91% 100% 43 201202382 Substrate example _ Resin 4 ULDPEa —1_ LDPEb ～ 6 7 Electron beam cross-linking LDPEc LDPEc 殳 之 无 — — Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ Χ 96〇C gas volume is less than 1%, less than 1%, less than 1%, less than 1%, winding direction due to heating, 4.2MPa, 6.1MPa, 9.0MPa, 3.5MPa, shrinkage stress, direction perpendicular to the winding direction, 4-lMPa 5.8MPa 7_lMPa 3.3MPa 50 C heating shrinkage test Test result - time required for heating 300 sec 360 sec 180 sec 480 sec Relaxation amount after heating 4.6 mm 4.0 mm 3.9 mm 4.8 mm _^· Re-adhesion peak in the step 11/100 10/100 11/100 13/100 Successfully picked up Rate 89% 90% 89% 87% 7〇°C Heat shrinkage test result Time required for heating 210sec 210sec 150sec 360sec 1. Relaxation after heating 4.2mm 4.0mm 2.6mm 3.7mm Re-bonding in the picking step 9 /100 13/100 0/100 7/100 Pickup success rate 91% 87% 100% 93% 90 C Heat shrinkage test result Time required for heating 180sec 210sec 40sec 210sec Relaxation after heating 4.2mm 3.6mm 2.0mm 4.0mm Re-bonding in the pickup step 9/100 8/100 0/100 10/100 Pickup success rate 91% 92% 100% 90% (3) Summary According to the above results, by using the dimension specified by JIS K7206 The card has a softening point of 50 ° C or more and less than 90. (: A thermoplastic cross-linked resin having an increase in stress due to heat shrinkage of 9 MPa or more is used as a base film, and can be used as a wafer processing belt suitable for the manufacture of a semiconductor device. That is, it is known that 50 C, 7 (TC, 90. (: The heating and shrinking step at any temperature can exhibit sufficient shrinkage in a short heating time, and there is very little loosening after the heat shrinking step. Moreover, it is known that the amount of relaxation With such a small number, the divided semiconductor wafer and the separated adhesive can be stably fixed to the wafer processing tape without causing damage to the adjacent wafers, or the adhesive layers are in contact with each other and re-adhered. Therefore, it exhibits good pick-up property. In addition, due to the short shrinkage time, it shows that the shrinkage layer 44 does not adhere to the adhesive layer i2 due to the application of excessive heat. The pick-up property is reduced. For those who have a Vicat softening point of 9 旳 or more, or an increase in stress due to heat shrinkage of less than 9.0 MPa (Comparative Examples 2, 2 and .4 to 7), in order to obtain slack Longer heating time 'The amount of slack after the heat shrinking step is also large, and the pick-up property is not good. In Comparative Example 3, there is no cross-linking structure, but the Vicat softening point is 50 ° C or more and less than 9 (TC, Moreover, the increase in the stress caused by heat shrinkage is 9_ or more, and therefore, the heat shrinkage property shows a good result. However, since the material is a polyvinyl chloride tape, dioxin or the like is generated when it is incinerated after use. Gasification of aromatic hydrocarbons may impose a burden on the environment. The substrate film shown in 'Example 5' has a more cross-linked structure and is more isotropic, and the gas atom The content does not reach the mass °/❶, so 'even if it is incinerated after use (4), it will produce dioxin or its analog, ie, chlorinated aromatic hydrocarbons, which will not burden the environment. Moreover, the manufacturing method of the above semiconductor device b to d are divided into individual semiconductor wafers in the extending step, and except for this point, the same steps as the stretching step, the heat shrinking step, and the picking step in the manufacturing method A of the semiconductor device are performed. 'Examples 丨 to 5 and comparison: The results of the wafer processing tape 10 of 1 to 7 are the same as those shown in Tables 1 and 2, and the manufacturing method of the semiconductor device (4) is used for heat shrinkability. From the viewpoint of pick-up, it is useful to use the wafer processing (4) of the present invention. It is also known that the wafer processing tape 1 〇 contains only the adhesive layer i 2 and the results shown in Table 1 and Table 2 are also known. [Brief Description of the Drawings] Fig. 1 is a cross-sectional view showing a state in which a wafer processing tape and a surface protective tape according to an embodiment of the present invention are bonded to a semiconductor wafer. A cross-sectional view showing a state in which a surface protection tape is bonded to a semiconductor wafer. Fig. 3 is a cross-sectional view for explaining a step of bonding a semiconductor wafer and a ring frame to a wafer processing tape. Fig. 4 is a cross-sectional view for explaining a step of peeling off a surface protective tape from a surface of a semiconductor wafer. Fig. 5 is a cross-sectional view showing a state in which a modified region is formed on a semiconductor wafer by laser processing. Fig. 6 (a) is a view showing a state in which a wafer processing tape is placed on an extension device. Fig. 6 (b) is a cross-sectional view showing the stretched wafer processing layer and the semiconductor wafer. The second embodiment is a cross-sectional view for explaining the step of eliminating the slack of the belt by heat shrinkage. A cross-sectional view for explaining a step of picking up a semiconductor wafer of an adhesive layer from a surface of a wafer by a wafer. Fig. 9 is a cross-sectional view for explaining the method of loosening the amount of the material. [Main component symbol description] 1 wafer processing tape 11 substrate 骐 12 adhesive layer 1 3 adhesive layer 46 201202382 14 Surface protection film 20 Ring frame 21 Platform 22 Ejector member 25 Heater table 26 Adsorption station 27 Ultraviolet light source 28 Heat shrinkage area 29 Warm air nozzle 30 Modified area 41 Push pin 42 Adsorption cylinder clamp 50 10G weight W semiconductor crystal according to JIS B7609 Round C semiconductor wafer a slack amount 47