KR20110110001A - Wafer processing tape - Google Patents

Abstract

Provided is a tape for wafer processing which has uniform expandability suitable for the process of dividing the adhesive layer by expand and exhibits sufficient shrinkage in the heat shrink process, and does not cause a problem due to relaxation after the heat shrink process. As the base film 11 of the expandable wafer processing tape 10 used when dividing the adhesive bond layer 13 along a chip | tip by an expansion, the Vicat softening point prescribed | regulated to JISK7206 is 50 degreeC or more and less than 90 degreeC. And thermoplastic crosslinked resin having an increase in stress due to heat shrinkage of 9 MPa or more.

Description

Wafer Processing Tape {WAFER PROCESSING TAPE}

TECHNICAL FIELD This invention relates to the expandable wafer processing tape used when dividing an adhesive bond layer along a chip | tip by an expand.

In the manufacturing process of a semiconductor device such as an IC, in order to reduce the thickness of the wafer after circuit pattern formation, the backgrinding step of grinding the back surface of the wafer, the adhesive tape and the wafer processing tape are adhered to the back surface of the semiconductor wafer, and the wafers are used in chip units. The dicing step of dividing, the process of expanding the tape for wafer processing, the process of picking up the chip | tip which divided | segmented, and the picked-up chip are adhere | attached to a lead frame or a package board | substrate, etc. Or in a laminated package, semiconductor chips are laminated | stacked and adhere | attached A die bonding (mount) process is performed.

In the said backgrinding process, the surface protection tape for protecting the circuit pattern formation surface (wafer surface) of a wafer from contamination is used. When peeling this surface protection tape from the wafer surface after completion | finish of back surface grinding of a wafer, after bonding the tape for wafer processing (dicing die bonding tape) demonstrated below to the back surface of a wafer, dicing die bonding to an adsorption table After fixing the tape side and giving a surface protection tape the process which reduces the adhesive force with respect to a wafer, a surface protection tape is peeled off. The wafer from which the surface protection tape has been peeled off is then lifted from the adsorption table in a state where the dicing die bonding tape is bonded to the back surface, and is then provided to the next dicing step. Moreover, the process which reduces said adhesive force is an ultraviolet irradiation process, when a surface protection tape consists of energy-beam curable components, such as an ultraviolet-ray, and a heat irradiation (heating) process, when a surface protection tape consists of a thermosetting component.

In the dicing process or the mounting process after the said backgrinding process, the dicing die bonding tape in which the adhesive layer and the adhesive bond layer were laminated | stacked on this base film in this order is used. In general, in the case of using a dicing die bonding tape, first, the adhesive layer of the dicing die bonding tape is affixed to the back surface of the semiconductor wafer to fix the semiconductor wafer, and the semiconductor wafer and the adhesive agent are used using a dicing blade. Dicing the layer into chips. Thereafter, the tape is expanded in the radial direction of the semiconductor wafer, whereby an expand step of increasing the spacing between the chips is performed. In the subsequent pick-up step, the expand step is performed to improve the recognition of the chip by the CCD camera or the like and to prevent the chip from being broken due to the contact between adjacent chips when picking up the chip. Thereafter, in the pick-up step, the chip is peeled off from the pressure-sensitive adhesive layer together with the adhesive layer and picked up, and in the mounting step, the chip is directly adhered to a lead frame or a package substrate. Thus, by using a dicing die bonding tape, the chip | tip with an adhesive bond layer can be directly adhere | attached to a lead frame, a package board | substrate, etc., and abbreviate | omits the adhesive application process and the process of adhering a die bonding film to each chip separately. can do.

However, in the dicing step, since the semiconductor wafer and the adhesive layer are diced together using the dicing blade as described above, not only the cutting chip of the wafer but also the cutting chip of the adhesive layer are generated. Since the cutting chip of the adhesive layer itself has an adhesive function, when the dicing grooves of the wafer are clogged with the cutting chip, chips stick together and pick-up defects occur, and the production yield of the semiconductor device is lowered.

In order to solve the above problem, a method for dividing an adhesive layer in correspondence with individual chips is proposed by dicing only a semiconductor wafer with a blade in a dicing step and expanding a dicing die bonding tape in an expand step. It became (for example, following patent document 1-[0056]). According to the method of dividing the adhesive layer using such a tension during expansion, no cutting chips of the adhesive are generated, which does not adversely affect the pick-up process.

In recent years, as a cutting method of a semiconductor wafer, a so-called stealth dicing method capable of cutting a wafer in a non-contact manner using a laser processing apparatus has been proposed.

For example, Patent Document 2 below discloses the inside of a semiconductor substrate by irradiating a laser beam while focusing the inside of a semiconductor substrate with a sheet through a die bond resin layer (adhesive layer) as a stealth dicing method. A semiconductor having a step of forming a modified region by multiphoton absorption, forming a cut scheduled portion in the modified region, and cutting a semiconductor substrate and a die bond resin layer along the cut scheduled portion by expanding (expanding) the sheet. A method of cutting a substrate is disclosed.

Moreover, as another method of the cutting method of the semiconductor wafer using a laser processing apparatus, following patent document 3 is equipped with the process of attaching the adhesive film (adhesive layer) for die bonding to the back surface of a semiconductor wafer, and the back surface, for example. Bonding the stretchable protective adhesive tape to the adhesive film side of the semiconductor wafer on which the adhesive film is mounted; and irradiating a laser beam along a street from the surface of the semiconductor wafer to which the protective adhesive tape is bonded to divide the individual semiconductor chips into individual semiconductor chips. The process and the process of extending (expanding) a protective adhesive tape, providing a tensile force to an adhesive film, and breaking an adhesive film for every semiconductor chip, and the process of leaving the semiconductor chip with which the broken adhesive film adhere | attaches from the protective adhesive tape. A method of dividing a semiconductor wafer including the above has been proposed.

According to the cutting methods of the semiconductor wafers described in Patent Documents 2 and 3, since the semiconductor wafer is cut in a non-contact manner by irradiation of a laser beam and a tape expansion, the physical load on the semiconductor wafer is small and is the mainstream blade. The semiconductor wafer can be cut without generating cutting chips (chipping) of the wafer as in the case of dicing. In addition, since the adhesive layer is divided by the expand, cutting chips of the adhesive layer are not generated. For this reason, it is attracting attention as an excellent technique which can replace blade dicing.

When dividing an adhesive bond layer by the expansion as described in the said patent documents 1-3, in order to reliably divide an adhesive bond layer along a semiconductor chip, the dicing die bonding tape used is uniform and Isotropic scalability is required. This is because when a location where expansion is insufficient locally occurs in the base film, sufficient tensile force is not propagated to the adhesive layer at that place, and the adhesive layer cannot be divided.

By the way, when extrusion molding a base film or winding a tape in roll shape as a product, an anisotropic force is applied to a dicing die bonding tape, and distortion stress arises, and the expandability of a base film is nonuniform and anisotropic It is said to be an enemy. Therefore, many proposals have been made so far as a dicing die bonding tape having uniform expandability (see, for example, Patent Documents 4 to 9 below).

In addition, since the tape is relaxed after the expansion, the gap between the individual chips cannot be maintained stably, and there is a problem in that the adhesive layer is re-adhesified by contact between adjacent chips during transportation. In order to solve the said problem, the method which uses the said tape as a heat shrinkable tape, heats and tensions a tape after the said dividing process, and maintains the space | interval between chips was proposed (for example, refer patent document 10, 11 below). . As the heat shrinkable tape, a polyvinyl chloride tape is preferred (see Patent Document 10, for example). However, when incineration after use of the polyvinyl chloride tape, there is a fear that dioxin or a chlorinated aromatic hydrocarbon, which is an analog thereof, is generated to put a load on the environment.

Japanese Patent Publication No. 2007-5530 Japanese Patent Laid-Open No. 2003-338467 Japanese Patent Laid-Open No. 2004-273895 Japanese Patent Laid-Open No. 6-134941 Japanese Patent Laid-Open No. 11-199840 Japanese Patent Laid-Open No. 2000-273416 Japanese Patent Laid-Open No. 2001-11207 Japanese Patent Laid-Open No. 2003-158098 Japanese Patent Publication No. 2009-231699 Japanese Patent Laid-Open No. 2002-334852 Japanese Patent Publication No. 2007-27562

As described above, according to the method in which the tape is heated and tensioned after the dividing step using the heat shrinkable tape to maintain the gap between the chips, the adhesive layer can be prevented from re-adhesion by loosening the tape after expanding. However, depending on the performance of the heat shrinkable tape to be used, shrinkage due to heating is not sufficient, and relaxation remains after the heat shrinkage process, and thus the segmented semiconductor chip and the individual fragmented adhesive layer cannot be stably fixed on the tape. When the adjacent semiconductor chips are in contact with each other and broken, or the adhesive layers are in contact with each other and re-adhered, the yield of the semiconductor component manufacturing process may be deteriorated.

The present invention provides a tape for wafer processing which has uniform expandability suitable for a process of dividing the adhesive layer by an expand and exhibits sufficient shrinkage in the heat shrink process and does not cause a problem due to relaxation after the heat shrink process. For the purpose of

MEANS TO SOLVE THE PROBLEM In order to solve the above subject, the 1st aspect of this invention is an expandable wafer processing tape used when dividing an adhesive bond layer along a chip | tip by an expand | expand, A base film and the adhesive provided on the said base film It has a layer, The said base film consists of thermoplastic crosslinked resin whose Vicat softening point prescribed | regulated to JISK7206 is 50 degreeC or more and less than 90 degreeC, The stress increase by heat contraction is 9 Mpa or more, It is characterized by the above-mentioned. Moreover, the 2nd aspect of this invention characterized by laminating | stacking an adhesive bond layer on the said adhesive layer.

According to the tape for wafer processing of the 1st and 2nd aspect, since a base film consists of thermoplastic crosslinked resin whose Vicat softening point is 50 degreeC or more and less than 90 degreeC, and the increase of the stress by heat contraction is 9 Mpa or more, it is an adhesive agent by expansion. It can be set as the tape for wafer processing which has uniform expandability suitable for the process of dividing a layer, and shows sufficient shrinkability in a heat shrink process, and does not cause a problem by relaxation after a heat shrink process.

In other words, in the non-crosslinked resin, the molecular chains are oriented in the processing direction, so that the expandability is anisotropic. However, when the molecular chains are crosslinked, the expandability becomes more isotropic, so that they can be appropriately used in the expansion process for dividing the adhesive layer. Can be. In addition, in the case where a predetermined or more elongation distortion is given to the film made of the crosslinked resin, the non-crosslinked portion yields, while the stress is preserved at the crosslinking point. Thereby, a restoring force acts on a base film. In general, although the expansion ratio of the wafer processing tape in the expand process is about 10%, when 10% elongation distortion is applied to a film made of a general non-crosslinked resin such as polyethylene, it is yielded and hardly restored even when heated. If it is a film of resin, it is easily contracted and restored by heating to the temperature of the softening point vicinity or more.

In general, in the heating step after the expansion step, the temperature of the wafer processing tape is about 50 to 90 ° C by heating using a warm air blower or the like, so that the base film resin of the tape for wafer processing is prescribed by JIS K7206. It is suitable that Vicat softening point is 50 degreeC or more and less than 90 degreeC, and it is more preferable that they are 50 degreeC or more and less than 80 degreeC. In addition, when the Vicat softening point is too low, it is not preferable because the resin softens excessively and fluidizes during the heat shrinkage. If the substrate of the wafer processing tape is fluidized in the heat shrinkage step, the wafer processing tape is melted. Therefore, about 50 degreeC is suitable for the minimum of a Vicat softening point. For the above reasons, by using a thermoplastic crosslinked resin having a Vicat softening point of 50 ° C. or more and less than 90 ° C. for the base film, it has uniform expandability suitable for the step of separating the adhesive layer by expand, and also has sufficient shrinkage in the heat shrink process. It can be set as the tape for wafer processing which shows.

In addition, after applying about 10% of elongation corresponding to the expansion rate of the wafer processing tape in the general expansion process, the wafer processing for the wafer processing generated in the expansion process is not performed unless the tape for wafer processing in which the shrinkage stress increases by a certain level or more by heating. It is not easy to remove the tape loose enough. If the loosening cannot be sufficiently removed, the semi-finished semiconductor chip and the individual fragmented adhesive cannot be stably fixed on the wafer processing tape, and the adjacent chips are in contact with each other and the adhesive layers are in contact with each other. Yields deteriorate.

The increase in stress acting on the wafer processing tape at the time of heat shrinkage is a method defined by JIS K7162, and after giving 10% elongation distortion to the test piece of the wafer processing tape, the chuck distance is kept constant. The maximum heat shrinkage stress of the test piece in the process of heating until the temperature of the test piece reaches 70 ° C, maintaining the test piece at a temperature of 70 ° C for 1 minute, and then returning the test piece to room temperature It is good to become 9 MPa or more larger than the initial stress just before heating start, More preferably, it is 10 MPa or more. In the case of the tape for wafer processing using the base film in which the increase in stress due to the heat shrinkage is less than 9 MPa, the shrinkage stress is canceled by the expansion stress due to the self-weight of the semiconductor wafer or the tape for wafer processing, so that sufficient relaxation is achieved even by heating. It cannot be removed. For the above reasons, by using the thermoplastic crosslinked resin having an increase in stress due to heat shrinkage of 9 MPa or more in the base film, it can be used as a wafer processing tape that does not cause a problem due to relaxation after the heat shrinkage step.

According to a third aspect of the present invention, in the tape for wafer processing according to the first or second aspect, the thermoplastic crosslinked resin is an ethylene- (meth) acrylic acid binary copolymer or an ethylene- (meth) acrylic acid- (meth) acrylic acid It is characterized in that the ionomer resin crosslinked alkyl ester terpolymer with metal ions.

According to a fourth aspect of the present invention, in the tape for wafer processing according to the first or second aspect, the thermoplastic crosslinking resin crosslinks low density polyethylene or ultra low density polyethylene by electron beam irradiation.

According to a fifth aspect of the present invention, in the tape for wafer processing according to the first or second aspect, the thermoplastic crosslinking resin crosslinks the ethylene-vinyl acetate copolymer by electron beam irradiation.

According to a sixth aspect of the present invention, in the tape for wafer processing according to the first, second, third, fourth, or fifth aspect, the content of chlorine atoms of the thermoplastic crosslinked resin is less than 1% by mass. .

According to the wafer processing tapes of the third to fifth aspects, since chlorine is not contained in the structural units of the molecular chain, the wafer processing tape of low environmental load can be provided while solving the above problems.

According to a seventh aspect of the present invention, in the tape for wafer processing according to the second, third, fourth, fifth, or sixth aspect, the tape for wafer processing is a surface of a semiconductor wafer on which a circuit pattern is formed. Bonding the protective tape; (b) a backgrinding step of grinding the back surface of the semiconductor wafer; and (c) the wafer processing tape on the back surface of the semiconductor wafer while the semiconductor wafer is heated at 70 to 80 ° C. Bonding the adhesive layer; (d) peeling off the surface protection tape from the surface of the semiconductor wafer; (e) irradiating a laser beam to a portion to be divided of the semiconductor wafer to absorb the multiphoton inside the wafer; And (f) expanding the wafer processing tape, thereby dividing the semiconductor wafer and the adhesive layer along a dividing line, A process of obtaining a plurality of semiconductor chips containing an adhesive layer; and (g) heating and shrinking portions of the tape for wafer processing that do not overlap with the semiconductor chips to remove the loosening generated in the expand process, thereby reducing the gap between the semiconductor chips. It is used for the manufacturing method of the semiconductor device including the process of hold | maintaining, and (h) the process of picking up the said semiconductor chip containing the said adhesive bond layer from the adhesive layer of the tape for a wafer process.

In an eighth aspect of the present invention, in the tape for wafer processing according to the second, third, fourth, fifth, or sixth aspect, the tape for wafer processing is (a) the surface of the semiconductor wafer on which the circuit pattern is formed. Bonding the protective tape; (b) a backgrinding step of grinding the back surface of the semiconductor wafer; and (c) an adhesive of the tape for wafer processing on the back surface of the semiconductor wafer in a state where the semiconductor wafer is heated at 70 to 80 ° C. Bonding the layers; (d) removing the surface protection tape from the surface of the semiconductor wafer; and (e) irradiating laser light along the dividing line from the surface of the semiconductor wafer and dividing it into individual semiconductor chips. And (f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips containing the adhesive layer. (G) a step of removing the relaxation occurring in the expand process by heating and shrinking a portion which does not overlap with the semiconductor chip of the wafer processing tape to maintain the gap of the semiconductor chip, and (h) the adhesive layer It is used for the manufacturing method of the semiconductor device including the process of picking up this semiconductor chip contained from the adhesive layer of the tape for a wafer process.

A ninth aspect of the present invention is the tape for wafer processing according to the second, third, fourth, fifth, or sixth aspect, wherein the tape for wafer processing is (a) the surface of the semiconductor wafer on which the circuit pattern is formed. Bonding the protective tape; (b) a backgrinding step of grinding the back surface of the semiconductor wafer; and (c) an adhesive of the tape for wafer processing on the back surface of the semiconductor wafer in a state where the semiconductor wafer is heated at 70 to 80 ° C. Bonding the layers; (d) removing the surface protection tape from the surface of the semiconductor wafer; and (e) cutting the semiconductor wafer along the dividing line using a dicing blade to divide the individual semiconductor chips. And (f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to form a plurality of semiconductor chips containing the adhesive layer. (G) a step of removing the relaxation occurring in the expansion step by maintaining a gap between the semiconductor chip by heating and shrinking a portion which does not overlap with the semiconductor chip of the wafer processing tape; and (h) the adhesive layer. It is used for the manufacturing method of the semiconductor device including the process of picking up this semiconductor chip contained from the adhesive layer of the tape for a wafer process.

A tenth aspect of the present invention is the tape for wafer processing according to the second, third, fourth, fifth, or sixth aspect, wherein the tape for wafer processing has a circuit pattern using (a) a dicing blade. The formed semiconductor wafer is cut along the division line predetermined line to a depth less than the thickness of the wafer, (b) bonding a surface protection tape to the surface of the semiconductor wafer, and (c) grinding the back surface of the semiconductor wafer to provide individual semiconductors. A backgrinding step of dividing into chips, (d) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor chip while the semiconductor wafer is heated at 70 to 80 ° C, and (e) the semiconductor wafer Peeling the surface protection tape from the surface; and (f) expanding the wafer processing tape, thereby dividing the adhesive layer into each of the semiconductor chips to make the contact. A process of obtaining a plurality of semiconductor chips including a coating layer; and (g) heat shrinkage of the portion of the wafer processing tape that does not overlap with the semiconductor chips to remove the relaxation caused in the expand process to maintain the gap of the semiconductor chips. And (h) a step of picking up the semiconductor chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing.

In the tape for wafer processing of this invention, the base film consists of thermoplastic crosslinked resin whose Vicat softening point is 50 degreeC or more and less than 90 degreeC, and since the increase of the stress by heat contraction is 9 Mpa or more, the process of dividing an adhesive bond layer by an expand It can be set as a tape for wafer processing which has a uniform expandability suitable for, and exhibits sufficient shrinkage in the heat shrinking step and does not cause a problem due to relaxation after the heat shrinking step.

That is, since the Vicat softening point is a thermoplastic crosslinked resin having a temperature of 50 ° C. or more and less than 90 ° C., the tape for wafer processing having uniform expandability suitable for the process of dividing the adhesive layer by expand and exhibiting sufficient shrinkage in the heat shrink process can be used. have. Moreover, since the increase of the stress by heat contraction is 9 Mpa or more, it can be set as the tape for a wafer process which does not cause a problem by relaxation after a heat shrink process.

1 is a cross-sectional view showing a state in which a wafer processing tape and a surface protection tape are bonded to a semiconductor wafer according to an embodiment of the present invention.
2 is a cross-sectional view showing a state in which a surface protective tape is bonded to a semiconductor wafer.
It is sectional drawing for demonstrating the process of bonding a semiconductor wafer and a ring frame to the tape for a wafer process.
It is sectional drawing for demonstrating the process of peeling a surface protection tape from the surface of a semiconductor wafer.
5 is a cross-sectional view showing a state in which a modified region is formed on a semiconductor wafer by laser processing.
FIG. 6A is a cross-sectional view showing a state in which a wafer processing tape is mounted on an expander, and FIG. 6B is a cross-sectional view showing the wafer processing tape, an adhesive layer, and a semiconductor wafer after expansion.
7 is a cross-sectional view for explaining a step of removing the relaxation of the tape by heat shrink.
It is sectional drawing for demonstrating the process of picking up the semiconductor chip containing an adhesive bond layer from the surface of the adhesive layer of the tape for a wafer process.
9 is a cross-sectional view for explaining a method for measuring a relaxation amount.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail based on drawing.

1: is sectional drawing which shows the state in which the semiconductor wafer W was bonded by the tape 10 for a wafer process concerning embodiment of this invention. The surface protection tape 14 for protecting a circuit pattern is bonded to the circuit pattern formation surface (wafer surface) of the semiconductor wafer W in the backgrinding process which grinds the wafer back surface. Moreover, the tape 10 for a wafer process is bonded to the back surface of the semiconductor wafer W. As shown in FIG. The tape 10 for wafer processing of this invention is an expandable tape used when dividing the adhesive bond layer 13 along a chip | tip by expansion. The wafer processing tape 10 has a base film 11, an adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the adhesive layer 12, and includes an adhesive layer ( 13) the back surface of the semiconductor wafer W is bonded. In addition, each layer may be cut | disconnected (precut) to a predetermined shape previously according to a use process and an apparatus. In addition, the tape for a wafer process of this invention includes the form cut | disconnected for every one wafer, and the form which wound the long sheet in which it was formed in multiple numbers in roll shape. Below, the structure of each layer is demonstrated.

<Substrate film>

The base film 11 is comprised from the thermoplastic crosslinking resin whose Vicat softening point prescribed | regulated to JISK7206 is 50 degreeC or more and less than 90 degreeC. By using the base film 11 of such a structure, the tape 10 for wafer processing which has the uniform and isotropic expandability which can be used by the expand process which divides the adhesive bond layer 13 can be implement | achieved. In addition, the crosslinked resin has a greater restoring force in tension than the non-crosslinked resin, so that the shrinkage stress when the resin is softened by applying heat in the tensioned state after the expansion process is large, so that the relaxation occurring on the tape after the expansion process is increased. It can remove by heat shrink, and the tape can be tensioned and the space | interval of each semiconductor chip can be kept stable. In general, since the tape is about 50 to 90 ° C. in the heating step after the expanding step, if the softening point is too high above this range, it is difficult to sufficiently remove the loosening, and on the contrary, if the tape is too low, there is a risk that the tape melts. .

The thermoplastic crosslinking resin may be any one as long as the Vicat softening point specified in JIS K7206 is 50 ° C. or more and less than 90 ° C., but the ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylic acid is metal. The ionomer-crosslinked ionomer resin is suitable for the expansion process in terms of uniform expandability, and is particularly suitable for the process of removing the loosening of the tape generated in the expansion process, since the strong restoring force acts upon heating by crosslinking. Do. In addition, since the ionomer resin does not contain chlorine in the structure of the molecular chain, even if the tape unnecessary after use is incinerated, no dioxin or its chlorinated aromatic hydrocarbon, which is an analog thereof, is generated, resulting in low environmental load. The metal ion contained in the ionomer resin may be anything, but zinc ion is particularly preferable in view of low contamination since zinc ions are low in elution.

As said thermoplastic crosslinking resin, what was crosslinked by irradiating an electron beam to low density polyethylene of specific gravity 0.910 or more and less than 0.930 or ultralow density polyethylene of specific gravity less than 0.910 other than the said ionomer resin is suitable. Since the crosslinked site and the non-crosslinked site coexist in the resin, the thermoplastic crosslinked resin is suitable for the expand process because it has a uniform uniform expandability, and has a strong restoring force upon heating. It is also particularly suitable for the process of removing the tape loosening. By suitably adjusting the quantity of the electron beam irradiated with respect to the low density polyethylene or the ultra low density polyethylene, the resin which has a Vicat softening point of 50 degreeC or more and less than 90 degreeC and sufficient uniform expandability can be obtained. In addition, since the electron beam crosslinked polyethylene does not contain chlorine in the structure of the molecular chain, even if the tape which is unnecessary after use is incinerated, dioxin or its chlorinated aromatic hydrocarbon which is an analog thereof is not generated, so the environmental load is small. As an example of the said low density polyethylene or the ultra low density polyethylene, the kernel etc. which are manufactured by Nippon Polychem Co., Ltd. are mentioned.

As said thermoplastic crosslinking resin, what was crosslinked by irradiating an ethylene-vinyl acetate copolymer to an electron beam other than the said ionomer resin and the electron beam crosslinked polyethylene is suitable. The thermoplastic crosslinked resin is particularly suitable for the step of removing the loosening of the tape generated in the expand process in that the restoring force acts strongly upon heating. By appropriately adjusting the amount of the electron beam, a resin having a Vicat softening point of 50 ° C. or more and less than 90 ° C. and having sufficient uniform expandability can be obtained. Since the electron beam-crosslinked ethylene-vinyl acetate copolymer also does not contain chlorine in the structure of the molecular chain, incineration of unnecessary tape after use does not generate dioxin or its chlorinated aromatic hydrocarbon, which is an analog thereof. . As an example of the said ethylene-vinyl acetate copolymer, Ultracene made from Nippon Polychem Co., etc. are mentioned.

In addition, although the base film 11 is a single | mono layer in the example shown in FIG. 1, it is not limited to this, The two or more multilayered structure which laminated | stacked the thermoplastic crosslinking resin which two or more types of Vicat softening points are 50 degreeC or more and less than 90 degreeC may be sufficient. Although the thickness of the base film 11 is not specifically defined, 50-200 micrometers is preferable as thickness which has sufficient intensity | strength which is easy to tension | tensile in the expansion process of the tape 10 for a wafer process, and is not broken, and is 100 micrometers- 150 micrometers is more preferable.

As a manufacturing method of the multiple layer base film 11, a conventionally well-known extrusion method, the lamination method, etc. can be used. When using the lamination method, you may interpose an adhesive agent between layers. As the adhesive, a conventionally known adhesive can be used.

<Adhesive layer>

The adhesive layer 12 can be formed by coating the adhesive on the base film 11. There is no restriction | limiting in particular in the adhesive layer 12 which comprises the tape 10 for a wafer process of this invention, and it does not produce peeling with the adhesive bond layer 13 at the time of dicing, and does not generate defects, such as a chip scattering, etc. What is necessary is just a thing which has the property of holding | maintenance of the holding | maintenance, and peeling with the adhesive bond layer 13 at the time of pick-up. In order to improve the pick-up property after dicing, it is preferable that the adhesive layer 12 is energy ray curable, and it is preferable that it is a material which is easy to peel with the adhesive bond layer 13 after hardening.

For example, in the present invention, at least one selected from polyisocyanates, melamine formaldehyde resins and epoxy resins in a compound (A) having an energy ray-curable carbon-carbon double bond having an iodine number of 0.5 to 20 in a molecule thereof. It is preferable to contain the polymer formed by addition-reacting a compound (B) of a species. Here, an energy ray is ionizing radiation, such as a light ray like an ultraviolet-ray, or an electron beam.

The compound (A) which is one of the main components of the adhesive layer 12 is demonstrated. A preferable introduction amount of the energy ray-curable carbon-carbon double bond of the compound (A) is 0.5 to 20, more preferably 0.8 to 10 in iodine value. If the iodine value is 0.5 or more, the effect of reducing the adhesive force after energy ray irradiation can be obtained. If the iodine value is 20 or less, the fluidity of the pressure-sensitive adhesive after energy ray irradiation is sufficient, and the gap between the chips after the expansion of the tape 10 for wafer processing is sufficient. In this case, it is possible to sufficiently suppress the problem that the image recognition of each chip becomes difficult at the time of pickup. Moreover, compound (A) itself has stability, and manufacture becomes easy.

It is preferable that it is -70 degreeC-0 degreeC, and, as for the said compound (A), it is more preferable that it is -66 degreeC--28 degreeC. If the glass transition point is -70 deg. C or higher, heat resistance to heat associated with energy ray irradiation is sufficient, and if it is 0 deg. C or lower, the scattering preventing effect of the semiconductor chip after dicing in a wafer having a rough surface state is sufficiently obtained. The compound (A) may be produced in any way, for example, a mixture of an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond, or an acrylic copolymer having a functional group or a methacryl type having a functional group. What was obtained by making copolymer (A1) react with the compound (A2) which has a functional group which can react with the functional group, and has an energy-beam curable carbon-carbon double bond is used.

Among these, the compound (A1) having the functional group includes a monomer (A1-1) having an energy ray-curable carbon-carbon double bond such as alkyl acrylate or methacrylic acid alkyl ester, and an energy ray-curable carbon-carbon double bond. It can obtain by copolymerizing the monomer (A1-2) which has a function and has a functional group. Examples of the monomer (A1-1) include hexyl acrylate having 6 to 12 carbon atoms in the alkyl chain, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, or alkyl. Pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, methacrylates similar to these, etc. which are monomers whose chain carbon number is 5 or less can be mentioned.

As a monomer (A1-1), a glass transition point becomes low, so that a monomer with a large carbon number is used, and the thing of a desired glass transition point can be produced. In addition to the glass transition point, in order to increase the compatibility and various performances, a low molecular weight compound having a carbon-carbon double bond such as vinyl acetate, styrene, acrylonitrile, or the like may also be blended. 5 masses of the total mass of the monomer (A1-1) It is possible within the range of% or less.

As a functional group which a monomer (A1-2) has, a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, an isocyanate group, etc. are mentioned, As a specific example of monomer (A1-2), acrylic acid, methacrylic acid, Cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N-methylol acrylamide, N -Methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, anhydrous Some of the isocyanate groups of phthalic acid, glycidyl acrylate, glycidyl methacrylate, allylglycidyl ether, and polyisocyanate compounds are hydroxyl group or carboxyl group and energy ray curing The urethane-ized etc. can be mentioned with the monomer which has a sex carbon-carbon double bond.

As a functional group used in a compound (A2), when the functional group which a compound (A1), ie, a monomer (A1-2) has, is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, an epoxy group, an isocyanate group, etc. are mentioned, A hydroxyl group is mentioned. In the case of the above, cyclic acid anhydride, isocyanate group, etc. may be mentioned. In the case of an amino group, an epoxy group, an isocyanate group, etc. may be mentioned. In the case of an epoxy group, a carboxyl group, a cyclic acid anhydride group, an amino group, etc. may be mentioned. As an example, the thing similar to what was enumerated by the specific example of monomer (A1-2) can be enumerated.

In the reaction between the compound (A1) and the compound (A2), by leaving an unreacted functional group, one defined in the present invention can be produced in terms of properties such as acid value or hydroxyl value. In the synthesis of the compound (A), as the organic solvent when the reaction is carried out by solution polymerization, ketone-based, ester-based, alcohol-based, or aromatic-based ones can be used. Among them, toluene, ethyl acetate, and isopropyl. In general, a good solvent of an acrylic polymer, such as alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone and the like, a solvent having a boiling point of 60 to 120 ° C is preferable, and as a polymerization initiator, α, α ' Radical generators, such as azobis type | system | groups, such as azobisisobutyl nitrile, and organic peroxides, such as benzoyl peroxide, are normally used. Under the present circumstances, a catalyst and a polymerization inhibitor can be used together and compound (A) of desired molecular weight can be obtained by adjusting superposition | polymerization temperature and superposition | polymerization time. In addition, it is preferable to use a mercaptan and a carbon tetrachloride solvent about adjusting molecular weight. In addition, this reaction is not limited to solution superposition | polymerization, It does not interfere with other methods, such as block polymerization and suspension polymerization, either.

Although compound (A) can be obtained as mentioned above, the molecular weight of compound (A) in this invention has preferable 300,000-1 million. If it is less than 300,000, the cohesion force becomes small, and chip shift easily occurs when dicing a wafer, and image recognition may be difficult. In order to prevent the said chip | tip shift to the maximum, it is preferable that molecular weight is 400,000 or more. In addition, when the molecular weight exceeds 1 million, there is a possibility of gelation at the time of synthesis and application. In addition, the molecular weight in this invention is the mass mean molecular weight of polystyrene conversion.

When compound (A) has an OH group whose hydroxyl value becomes 5-100, since the risk of a pick-up mistake can be further reduced by reducing the adhesive force after energy-beam irradiation, it is preferable. Moreover, it is preferable that compound (A) has a COOH group whose acid value becomes 0.5-30. Here, when the hydroxyl value of compound (A) is too low, the effect of reducing the adhesive force after energy ray irradiation is not enough, and when too high, it exists in the tendency to impair the fluidity | liquidity of the adhesive agent after energy ray irradiation. If the acid value is too low, the effect of improving tape recoverability is insufficient. If the acid value is too high, the flowability of the pressure-sensitive adhesive tends to be impaired.

Next, the compound (B) which is another main component of an adhesive layer is demonstrated. A compound (B) is a compound chosen from polyisocyanate, melamine formaldehyde resin, and an epoxy resin, and can be used individually or in combination of 2 or more types. The said compound (B) acts as a crosslinking agent, and improves the cohesion force of the adhesive which has the compound (A) and the compound (B) as a main component after adhesive application by the crosslinking structure which arises as a result of reaction with a compound (A) or a base film. You can.

There is no restriction | limiting in particular as polyisocyanate, For example, 4,4'- diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4'- diphenyl ether diisocyanate, 4,4 Aromatic isocyanates such as'-[2,2-bis (4-phenoxy phenyl) propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4 '-Dicyclohexyl methane diisocyanate, 2,4'-dicyclohexyl methane diisocyanate, lysine diisocyanate, lysine triisocyanate, etc. are mentioned, Specifically, colonate L (brand name by the Japan Polyurethane Co., Ltd.) etc. are mentioned. Can be used. Specifically, as melamine formaldehyde resin, Nikarak MX-45 (brand of Sanwa Chemical Co., Ltd.), melan (brand name of Hitachi Kasei Kogyo Co., Ltd.) etc. can be used. As the epoxy resin, TETRAD-X (trade name manufactured by Mitsubishi Chemical Corporation) can be used. In this invention, it is especially preferable to use polyisocyanate.

As addition amount of (B), it is necessary to select so that it may become 0.1-10 mass parts with respect to 100 mass parts of compound (A), Preferably it is 0.4-3 mass parts. By selecting in the said range, it can be set as appropriate cohesion force and a crosslinking reaction does not advance rapidly, and workability | operativity, such as compounding and application | coating of an adhesive, becomes favorable.

In addition, in this invention, it is preferable that the adhesive layer 12 contains the photoinitiator (C). There is no restriction | limiting in particular in the photoinitiator (C) contained in the adhesive layer 12, What is conventionally known can be used. For example, benzophenones, such as benzophenone, 4,4'- dimethylamino benzophenone, 4,4'- diethylamino benzophenone, and 4,4'- dichloro benzophenone, acetophenone, diethoxy acetophenone, etc. Anthraquinones such as acetophenones, 2-ethylanthraquinone and t-butyl anthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triaryl An imidazole dimer (ropin dimer), an acridine type compound, etc. are mentioned, These can be used individually or in combination of 2 or more types. As addition amount of (C), it is preferable to set it as 0.1-10 mass parts with respect to 100 mass parts of compound (A), and it is more preferable to set it as 0.5-5 mass parts.

Moreover, a tackifier, an adhesion regulator, surfactant, etc., other modifiers, etc. can be mix | blended with the energy ray curable adhesive used for this invention as needed. Moreover, you may add an inorganic compound filler suitably.

The thickness of the adhesive layer 12 is at least 5 micrometers, More preferably, it is 10 micrometers or more. The pressure-sensitive adhesive layer may have a structure in which a plurality of layers are laminated, and the composition of each layer may be the same or different.

<Adhesive layer>

The adhesive layer 13 is peeled off from the pressure-sensitive adhesive layer 12 and adhered to the chip when the semiconductor wafer is bonded and diced to pick up the chip, and is used as an adhesive for fixing the chip to a substrate or a lead frame. Will be. At the time of a semiconductor wafer process, the said adhesive bond layer 13 may be previously laminated | stacked on the wafer processing tape 10 which laminated | stacked the adhesive layer 12 on the base film 11, and may be separately bonded to a semiconductor wafer separately. . Although an adhesive agent is not specifically limited, What is necessary is just a film adhesive generally used for a dicing die bonding tape, and an acrylic adhesive agent, the blend type adhesive agent of an epoxy resin / phenol resin / acrylic resin, etc. are preferable. Although the thickness may be set suitably, about 5-100 micrometers is preferable.

In the tape 10 for wafer processing of the present invention, the adhesive layer 13 is formed on the base film 11 directly or indirectly, in which the adhesive layer 13 is formed into a film (hereinafter referred to as an adhesive film). You may laminate and form. It is preferable to apply the linear pressure of 0.01-10 N / m in the range of 10-100 degreeC in the temperature at the time of lamination. In addition, the adhesive film 13 may be formed on the separator, and the separator may be peeled off after lamination, or may be used as it is as a cover film of the tape 10 for wafer processing, and may be peeled off when bonding a semiconductor wafer. .

Although the adhesive film may be laminated | stacked on the whole surface of the adhesive layer 12, you may laminate | stack the adhesive film cut | disconnected (precut) in the shape according to the semiconductor wafer to be bonded previously. In the case where the adhesive film according to the semiconductor wafer is laminated, as shown in FIG. 1, the adhesive layer 13 is attached to the portion to which the semiconductor wafer W is bonded, and the adhesive layer is attached to the portion to which the ring frame 20 is bonded. 13) only the pressure-sensitive adhesive layer 12 is present. In general, since the adhesive layer 13 is difficult to peel off the adherend, by using a precut adhesive film, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12, and the ring at the time of peeling off the tape after use The effect that the adhesive component hardly remains on the frame 20 can be obtained.

<Use>

The use of the tape for wafer processing 10 of the present invention is not particularly limited as long as it is used in the method of manufacturing a semiconductor device including at least the step of dividing the adhesive layer 13 by expansion. For example, it can use suitably by the following manufacturing methods (A)-(D) of a semiconductor device.

Manufacturing method of semiconductor device (A)

(a) bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed, (b) a backgrinding process for grinding the back surface of the semiconductor wafer, and (c) heating the semiconductor wafer at 70 to 80 ° C. Bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer; (d) peeling the surface protection tape from the surface of the semiconductor wafer; and (e) laser beam to a portion to be divided of the semiconductor wafer. Forming a modified region by multiphoton absorption inside the wafer; and (f) expanding the wafer processing tape to divide the semiconductor wafer and the adhesive layer along a dividing line, A process of obtaining a plurality of semiconductor chips containing an adhesive layer; and (g) a portion not overlapping with the semiconductor chips of the wafer processing tape. A step of maintaining the gap between the semiconductor chips by removing the relaxation caused by the expansion process by thermal contraction; and (h) a step of picking up the semiconductor chip including the adhesive layer from the pressure-sensitive adhesive layer of the wafer processing tape. Method of manufacturing the device.

Manufacturing method of semiconductor device (B)

(a) bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed, (b) a backgrinding process for grinding the back surface of the semiconductor wafer, and (c) heating the semiconductor wafer at 70 to 80 ° C. Bonding the adhesive layer of the wafer processing tape to the back surface of the semiconductor wafer; (d) peeling the surface protection tape from the surface of the semiconductor wafer; and (e) laser along the dividing line from the surface of the semiconductor wafer. Irradiating light and dividing it into individual semiconductor chips; (f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips containing the adhesive layer; (g) in the expand process by heating and shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip. A method of manufacturing a semiconductor device comprising a step of picking up step and, (h) the semiconductor chip with the adhesive layer by removing the relaxation occurred to maintain the distance between the semiconductor chip from the pressure-sensitive adhesive layer of the wafer processing tape.

(C) Method of Manufacturing Semiconductor Device

(a) bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed, (b) a backgrinding process for grinding the back surface of the semiconductor wafer, and (c) heating the semiconductor wafer at 70 to 80 ° C. Bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer; (d) peeling the surface protection tape from the surface of the semiconductor wafer; and (e) dividing the semiconductor wafer using a dicing blade. Cutting along the line and dividing into individual semiconductor chips; and (f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips containing the adhesive layer. And (g) heat shrinking the portion of the wafer processing tape that does not overlap with the semiconductor chip. A method of manufacturing a semiconductor device comprising a step of picking up the slack caused by removing the step of maintaining the distance of the semiconductor chip, (h) the semiconductor chip with the adhesive layer from the pressure-sensitive adhesive layer of the wafer processing tape.

Manufacturing method of semiconductor device (D)

(a) cutting the semiconductor wafer on which the circuit pattern is formed using a dicing blade to a depth less than the thickness of the wafer along the dividing line predetermined line, (b) bonding a surface protection tape to the surface of the semiconductor wafer; c) a backgrinding step of grinding the back surface of the semiconductor wafer and dividing it into individual semiconductor chips; and (d) the adhesive layer of the tape for wafer processing on the back surface of the semiconductor chip in a state where the semiconductor wafer is heated at 70 to 80 ° C. And (e) peeling the surface protection tape from the surface of the semiconductor wafer, and (f) expanding the wafer processing tape, thereby dividing the adhesive layer for each of the semiconductor chips to contain the adhesive layer. (G) heating a portion which does not overlap with the semiconductor chip of the wafer processing tape; Thereby removing the relaxation occurring in the expand process to maintain the gap of the semiconductor chip, and (h) picking up the semiconductor chip containing the adhesive layer from the pressure-sensitive adhesive layer of the wafer processing tape. Manufacturing method.

In addition, the manufacturing method (A)-(D) of the said semiconductor device is a manufacturing method at the time of using the tape for wafer processing which has a base film, an adhesive layer, and an adhesive bond layer. When the tape for wafer processing has only a base film and an adhesive layer, in the process of bonding the tape for a wafer processing to a semiconductor wafer, the tape for a wafer processing is bonded together through an adhesive bond layer on the back surface of a semiconductor wafer.

<How to use>

The use method of the tape at the time of applying the tape 10 for wafer processing of this invention to the manufacturing method (A) of the said semiconductor device is demonstrated, referring FIGS. First, as shown in FIG. 2, the backgrinding process of bonding the surface protection tape 14 which consists of an ultraviolet curable component to the surface of the semiconductor wafer W in which the circuit pattern was formed, and grinding the back surface of the semiconductor wafer W is carried out. Is carried out.

After completion of the backgrinding process, as shown in FIG. 3, the semiconductor wafer W is placed on the heater table 25 of the wafer mounter with the surface side of the semiconductor wafer W down, and then the semiconductor wafer ( The tape 10 for wafer processing is bonded to the back surface of W). The tape 10 for wafer processing used here is the laminated | stacked adhesive film previously cut | disconnected (precut) to the shape according to the semiconductor wafer W to bond, and an adhesive agent in the surface to bond with the semiconductor wafer W, The area | region in which the adhesive layer 12 was exposed is formed around the area | region in which the layer 13 was exposed. The portion where the adhesive layer 13 of the tape 10 for wafer processing is exposed and the back surface of the semiconductor wafer W are bonded to each other, and the portion where the adhesive layer 12 around the adhesive layer 13 is exposed and the ring frame Join (20). At this time, the heater table 25 is set to 70-80 degreeC, and heat bonding is performed by this.

Next, the semiconductor wafer W to which the wafer processing tape 10 is bonded is taken out from the heater table 25, and as shown in FIG. 4, a wafer adsorption table is shown with the wafer processing tape 10 side down. It loads on (26). And the ultraviolet-ray of 1000 mJ / cm <2> is irradiated to the base material surface side of the surface protection tape 14, for example using the ultraviolet light source 27 from the upper side of the semiconductor wafer W adsorbed and fixed to the adsorption table 26, The adhesive force of the surface protection tape 14 to the semiconductor wafer W is reduced, and the surface protection tape 14 is peeled off from the surface of the semiconductor wafer W. As shown in FIG.

Next, as shown in FIG. 5, the laser beam is irradiated to the division plan part of the semiconductor wafer W, and the modified region 30 by multiphoton absorption is formed in the inside of the semiconductor wafer W. Next, as shown in FIG.

Next, as shown to Fig.6 (a), the tape processing apparatus 10 with which the semiconductor wafer W and the ring frame 20 were bonded is expanded with the base film 11 side down. It loads on the stage 21 of the. In the figure, reference numeral 22 denotes a hollow cylindrical pushing member of the expander.

Next, as shown in FIG. 6B, in a state where the ring frame 20 is fixed, the pushing member 22 of the expander is raised to expand the tape 10 for wafer processing. As an expand condition, an expand speed is 10-500 mm / sec, for example, and an amount of expansion (a pushing amount) is 5-25 mm, for example. As described above, the tape 10 for wafer processing is stretched in the radial direction of the semiconductor wafer W, so that the semiconductor wafer W is divided in units of chips starting from the modified region 30. At this time, in the part adhering to the back surface of the semiconductor wafer W, elongation (deformation) due to expansion is suppressed and no breakage occurs, but at the position between the chips C, the tape is expanded. The tension due to is concentrated and broken. Therefore, the adhesive layer 13 is also divided together with the semiconductor wafer W. As shown in FIG. For this reason, the some semiconductor chip C in which the adhesive bond layer 13 was included can be obtained.

Next, as shown in FIG. 7, the pushing-up member 22 is returned to the initial position, the relaxation of the tape 10 for a wafer process which arose in the previous expansion process is removed, and the space | interval of the semiconductor chip C is removed. The process of keeping it stable is performed. In the above process, for example, the warm air nozzle 29 is located in the annular region 28 between the ring frame 20 and the region where the semiconductor chip C is present in the tape 10 for wafer processing. The hot air of 50-90 degreeC is blown using, and the base film 11 is heat-shrunk, and the tape 10 for a wafer process is tensioned. Thereafter, the pressure-sensitive adhesive layer 12 is subjected to an energy ray curing treatment, a thermosetting treatment, or the like to weaken the adhesive force of the pressure-sensitive adhesive layer 12 to the adhesive layer 13. As shown in FIG. 8, the semiconductor chip C is pushed up from the back surface of the base film 11 (the surface where the semiconductor wafer is not bonded) by the pushing pin 41, and the adsorption collet 42 is pushed up. The semiconductor chip C is picked up by being adsorbed.

In the method of manufacturing a semiconductor device as described above, the base film 11 made of a thermoplastic crosslinked resin has a large restoring force with respect to stretching performed at the time of expansion, and also has a low Vicat softening point, so that it easily contracts by heating. . Therefore, the loosening which generate | occur | produced in the tape 10 for a wafer process after the expanded process which divides the adhesive bond layer 13 is removed by heat shrink, and it can apply suitably to the process of tensioning a tape.

<Examples>

Next, although the Example and comparative example which were performed in order to clarify the effect of this invention are demonstrated in detail, this invention is not limited to these Examples.

The base film 11 shown in Table 1 and Table 2 is used for the tape 10 for a wafer process of Examples 1-5 and Comparative Examples 1-7, respectively. The manufacturing method of the adhesive composition which comprises the adhesive layer 12 which is another structure, the adhesive composition which comprises the adhesive bond layer 13, and the tape 10 for a wafer process is the same. In addition, in the following description, density was JIS K7112 and melting | fusing point was measured by DSC (differential scanning calorimetry).

(1) production of samples

(1.1) Example 1

(Production of base film 11)

Zinc ionomer a (density 0.96 g / cm 3, zinc ion content 4 mass%, chlorine content) of the ethylene-methacrylic acid-ethyl methacrylate (mass ratio 8: 1: 1) terpolymer copolymerized by the radical polymerization method The support substrate 1 which forms the base film 11 is melt | dissolved at 140 degreeC by melt | dissolving resin beads of less than 1 mass%, 56 degreeC of Vicat softening point, and 86 degreeC of melting | fusing point, and shape | molding to elongate film shape of thickness 100micrometer using an extruder. Produced.

(Preparation of Adhesive Composition 1)

The radical copolymerization of butyl acrylate, 2-hydroxyethyl acrylate and acrylic acid yielded an acrylic copolymer (molecular weight of 600,000, hydroxyl value of 4.7 mgKOH / g, acid value of 0.2 mgKOH / g). To 100 mass parts of this acryl-type copolymer, 30 mass parts of trimethylolpropane triacrylates are added as a photopolymerizable hardened | cured material, 2 mass parts of colonate L (made by Japan Polyurethane) is added as a polyisocyanate, and a photoinitiator As a mixture, 1 mass parts of Irgacure-184 (manufactured by Shiba Kaiji Co., Ltd.) was dissolved in ethyl acetate, followed by stirring to prepare pressure-sensitive adhesive composition 1.

(Preparation of Adhesive Composition 1)

50 mass parts of cresol novolak-type epoxy resins (epoxy equivalent 197, molecular weight 1200, softening point 70 degreeC) as an epoxy resin, 1.5 mass parts of (gamma)-mercaptopropyl trimethoxysilane as a silane coupling agent, (gamma) -ureidopropyl triethoxy Cyclohexanone was added and stirred and mixed with the composition which consists of 3 mass parts of silanes, and 30 mass parts of silica fillers of an average particle diameter of 16 nm, and it knead | mixed for 90 minutes using the bead mill. To this, 100 parts by mass of acrylic resin (molecular weight 200,000, hydroxyl value of 3.5 mgKOH / g) synthesized by radical polymerization of butyl acrylate and 2-hydroxyethyl acrylate and 1 part by mass of colonate L as a curing agent were added. The mixture was stirred and mixed to prepare an adhesive composition 1.

(Production of the tape 10 for a wafer processing)

Adhesion in which the pressure-sensitive adhesive composition 1 is applied onto the supporting base 1 forming the base film 11 so that the thickness after drying is 20 μm, dried at 110 ° C. for 3 minutes, and the pressure-sensitive adhesive layer 12 is formed on the base film 11. The sheet was produced. Separately, the adhesive composition 1 is applied to a release liner made of a polyethylene-terephthalate film having a release treatment so as to have a thickness of 20 μm after drying, and dried at 110 ° C. for 3 minutes to form an adhesive layer 13 on the release liner. An adhesive film was produced.

Next, the adhesive sheet was cut out to the shape shown in FIG. 3 etc. which can be bonded so that the opening part may be covered with respect to the ring frame 20. FIG. Moreover, the adhesive film was cut out to the shape shown in FIG. 3 etc. which can cover the back surface of the semiconductor wafer W. As shown in FIG. And the adhesive layer 12 side of the said adhesive sheet and the adhesive bond layer 13 side of the said adhesive film are bonded so that the part which the adhesive layer 12 is exposed may be formed around the adhesive film as shown in FIG. The tape 10 for a wafer process was produced. In this way, the supporting substrate constituting the base film 11, the energy ray-curable pressure-sensitive adhesive layer 12, and the adhesive layer 13 were fabricated in this order, and the tape 10 for wafer processing was produced, and the sample of Example 1 was prepared. It was set as.

(1.2) Example 2

(Manufacture of base film 11)

Zinc ionomer b (density 0.95 g / cm 3, zinc ion content 2% by mass, chlorine content less than 1% by mass) of ethylene-methacrylic acid (mass ratio 9.5: 0.5) binary copolymer synthesized by radical polymerization method 81 degreeC and melting | fusing point 100 degreeC) were melt | dissolved at 140 degreeC, and the support base material 2 which comprises the base film 11 was produced by shape | molding in the long film shape of thickness 100micrometer using an extruder.

The tape 10 for a wafer process was produced by the method similar to Example 1 using the support base material 2 which consists of the said base film 11, the adhesive composition 1, and the adhesive composition 1, and used this as the sample of Example 2. .

(1.3) Example 3

(Manufacture of base film 11)

Ultra low density polyethylene ULDPE a (density 0.90 g / cm 3, chlorine content less than 1 mass%, Vicat softening point 72 ° C., melting point 90 ° C.) synthesized by the metallocene polymerization method was melted at 140 ° C., and an extruder was used. After molding to a long film shape having a thickness of 100 μm, a supporting substrate 3 constituting the base film 11 was produced by irradiating an electron beam with an acceleration voltage of 1MeV and an irradiation amount of 20 Mrad using a heavy energy electron beam accelerator.

Using the support base material 3 which comprises the said base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this was made into the sample of Example 3. .

(1.4) Example 4

(Manufacture of base film 11)

Low-density polyethylene LDPE b (density 0.91 g / cm 3, chlorine content less than 1 mass%, Vicat softening point 81 ° C., melting point 102 ° C.) synthesized by the metallocene polymerization method was melted at 140 ° C., using an extruder, After shape | molding to the elongate film shape of thickness 100micrometer, the support base material 4 which comprises the base film 11 was produced by irradiating an electron beam with an acceleration voltage of 1MeV and irradiation amount of 20 Mrad using a heavy energy electron beam accelerator.

The tape 10 for a wafer process was produced by the method similar to Example 1 using the support base material 4 which comprises the said base film 11, the adhesive composition 1, and the adhesive composition 1, and made it the sample of Example 4 .

(1.5) Example 5

(Manufacture of base film 11)

The resin beads of the ethylene-vinyl acetate (mass ratio 9: 1) copolymer EVA a (density 0.93 g / cm <3>, chlorine content less than 1 mass%, Vicat softening point 69 degreeC, melting | fusing point 96 degreeC) synthesize | combined by the radical polymerization method were 140 degreeC. 5, a support substrate 5 that forms the base film 11 by irradiating an electron beam with an acceleration voltage of 1MeV and an irradiation dose of 20 Mrad using a heavy energy electron beam accelerator, after being melted in an extruder. Was produced.

The tape 10 for a wafer process was produced by the method similar to Example 1 using the support base material 5 which consists of the said base film 11, the adhesive composition 1, and the adhesive composition 1, and it was set as the sample of Example 5 .

(1.6) Comparative Example 1

(Manufacture of base film 11)

Zinc ionomer c (density 0.94 g / cm 3, zinc ion content 1 mass%, chlorine content less than 1 mass%) of ethylene-methacrylic acid (mass ratio 9.5: 0.5) binary copolymer synthesized by radical polymerization method 80 degreeC and melting | fusing point 98 degreeC) were melt | dissolved at 140 degreeC, and the support base material 6 which comprises the base film 11 was produced by shape | molding in elongate film shape of thickness 100micrometer using an extruder.

The tape 10 for a wafer process was produced by the method similar to Example 1 using the support base material 6 which comprises the said base film 11, the adhesive composition 1, and the adhesive composition 1, and made it the sample of the comparative example 1. .

(1.7) Comparative Example 2

(Manufacture of base film 11)

The resin beads of the ethylene-vinyl acetate (mass ratio 9: 1) copolymer EVA a (density 0.93 g / cm <3>, chlorine content less than 1 mass%, Vicat softening point 69 degreeC, melting | fusing point 96 degreeC) synthesize | combined by the radical polymerization method were 140 degreeC. The support base 7 which forms the base film 11 was produced by melt | dissolving in the and using the extruder and shape | molding in the long film shape of thickness 100micrometer.

The tape 10 for a wafer process was produced by the method similar to Example 1 using the support base material 7 which comprises the said base film 11, the adhesive composition 1, and the adhesive composition 1, and made it the sample of the comparative example 2. .

(1.8) Comparative Example 3

(Manufacture of base film 11)

Commercially available resin polyvinyl chloride a (30 mass% plasticizer, density 1.45 g / cm 3, chlorine content 56.8 mass%, Vicat softening point 76 ° C., melting point 100 ° C.) is melted at 140 ° C., and is extruded using an extruder. The support base material 8 which comprises the base film 11 was produced by shape | molding in 100-micrometer long film shape.

The tape 10 for a wafer process was produced by the method similar to Example 1 using the support base material 8 which comprises the said base film 11, the adhesive composition 1, and the adhesive composition 1, and made it the sample of the comparative example 3 .

(1.9) Comparative Example 4

(Manufacture of base film 11)

Ultra low density polyethylene ULDPE a (density 0.90 g / cm 3, chlorine content less than 1 mass%, Vicat softening point 72 ° C., melting point 90 ° C.) synthesized by the metallocene polymerization method was melted at 140 ° C., and an extruder was used. Then, the support base material 9 which comprises the base film 11 was produced by shape | molding in elongate film shape of thickness 100micrometer.

Using the support base 9 which comprises the said base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and it was set as the sample of the comparative example 4. .

(1.10) Comparative Example 5

(Manufacture of base film 11)

Low-density polyethylene LDPE b (density 0.91 g / cm 3, chlorine content less than 1 mass%, Vicat softening point 81 ° C., melting point 102 ° C.) synthesized by the metallocene polymerization method was melted at 140 ° C., using an extruder, The support base material 10 which comprises the base film 11 was produced by shape | molding in elongate film shape of thickness 100micrometer.

The tape 10 for a wafer process was produced by the method similar to Example 1 using the support base material 10 which comprises the said base film 11, the adhesive composition 1, and the adhesive composition 1, and made it the sample of the comparative example 5. .

(1.11) Comparative Example 6

(Manufacture of base film 11)

Low-density polyethylene LDPE c (density 0.91 g / cm 3, chlorine content less than 1 mass%, Vicat softening point 96 ° C., melting point 102 ° C.) synthesized by the metallocene polymerization method was melted at 140 ° C., using an extruder, After shaping | molding to elongate film shape of thickness 100micrometer, the support base material 11 which comprises the base film 11 was produced by irradiating an electron beam with acceleration voltage 1MeV and irradiation amount 20Mrad using a heavy energy electron beam accelerator.

The tape 10 for a wafer process was produced by the method similar to Example 1 using the support base material 11 which comprises the said base film 11, the adhesive composition 1, and the adhesive composition 1, and made it the sample of the comparative example 6 .

(1.12) Comparative Example 7

(Manufacture of base film 11)

Low-density polyethylene LDPE c (density 0.91 g / cm 3, chlorine content less than 1 mass%, Vicat softening point 96 ° C., melting point 102 ° C.) synthesized by the metallocene polymerization method was melted at 140 ° C., using an extruder, The support base material 12 which comprises the base film 11 was produced by shape | molding in elongate film shape of thickness 100micrometer.

Using the support base material 12 which comprises the said base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and it was set as the sample of the comparative example 7. .

(2) evaluation of samples

(2.1) Increase in shrinkage stress due to heating

By the method shown below, the increase amount of the shrinkage stress at the time of heating the tape for a wafer process of Examples 1-5 and Comparative Examples 1-7 was measured.

After removing the adhesive bond layer from the tape for wafer processing of Examples 1-5 and Comparative Examples 1-7, the said tape for wafer processing was processed into the test piece of the dimension prescribed | regulated to JISK7162. At this time, the longitudinal direction (direction giving extension strain) of the test piece was along the winding direction (the extrusion direction and the winding direction (MD direction) in the extrusion molding step of the supporting substrate) when the tape for wafer processing was wound in a roll shape, Two types of test specimens of the longitudinal direction along the direction (TD direction) perpendicular to the winding direction were produced. Subsequently, after giving the test piece 10% elongation distortion to the test piece of the tape by the method specified by JIS K7162 by using a straw graph having a heating chamber, the temperature of the test piece was kept in a constant distance between the chucks. The shrinkage stress in the process of heating until reaches 70 degreeC, the process hold | maintained at the temperature of 70 degreeC for 1 minute after that, and then returning the said test piece to room temperature was monitored. From the obtained measurement result, the value of the initial stress immediately before a heating start was subtracted from the value of the largest shrinkage stress observed, and the increase amount of shrinkage stress was calculated | required. Table 1 and Table 2 show the results when the tape for wafer processing of each example and each comparative example is used.

(2.2) Conformance test in semiconductor processing process

By the method shown below, the compatibility test in the following semiconductor processing processes corresponded to the manufacturing method (A) of the semiconductor device mentioned above about the tape for a wafer process of a said Example and the said comparative example.

(a) Process of bonding a surface protection tape to the semiconductor wafer surface in which the circuit pattern was formed.

(b) A backgrinding process for grinding the back surface of the semiconductor wafer.

(c) While the semiconductor wafer is heated at 70 to 80 ° C., the adhesive layer of the tape for wafer processing is bonded to the back surface of the semiconductor wafer, and at the same time, the ring frame for wafer processing is used, and the adhesive layer of the tape for wafer processing is an adhesive layer. Bonding to exposed parts without overlapping.

(d) Peeling a surface protection tape from the surface of the said semiconductor wafer.

(e) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption inside the wafer.

(f) A step of dividing the semiconductor wafer and the adhesive layer along a dividing line by expanding the wafer processing tape by 10% to obtain a plurality of semiconductor chips containing the adhesive layer.

(g) The part which does not overlap with the said semiconductor chip of the said tape for a wafer process (an annular area | region between the area where a semiconductor chip exists and a ring frame) is heated to 50 degreeC, 70 degreeC, or 90 degreeC, The heating process which continues heating until the relaxation of the said tape is eliminated. In addition, the time heated in this heating process was recorded. In addition, after the said heating process, the loosening amount of the tape for a wafer process was measured by loading 10 g weight of JIS B7609 compliant on the back surface (surface which does not bond a semiconductor wafer) of a base film, and confirmed that the said loosening amount was less than 5 mm.

(h) A step of picking up the semiconductor chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing.

(g) The measurement of the amount of loosening at the end of the process is performed in the state in which the wafer processing tape 10 is adhered to the ring frame 20, as shown in FIG. 9 (the surface where the semiconductor wafer is not bonded). 10 g weights conforming to JIS B7609 are carried out on the substrate, and the distance from the position (position indicated by the broken line in FIG. 9) in the state where the wafer processing tape 10 is parallel to the joint surface of the ring frame 20 (a in FIG. 9) Distance) was defined as the amount of relaxation. Table 1 and Table 2 show the results of the amount of relaxation and the heating time in the case where the tape for wafer processing of each example and each comparative example is used.

(2.3) Pickup Success Rate

About the tape for a wafer process of the said Example and a comparative example, the yield (pickup success rate) in the final (h) process was evaluated. Table 1 and Table 2 show the results when the tape for wafer processing of each example and each comparative example is used.

(3) clearance

From the above results, as a base film, the tape for wafer processing suitable for manufacture of a semiconductor device is used by using thermoplastic crosslinking resin whose Vicat softening point prescribed | regulated to JISK7206 is 50 degreeC or more and less than 90 degreeC, and the stress increase by heat shrink is 9 Mpa or more. It became clear that it could. In other words, the heat shrinkage step at any temperature of 50 ° C, 70 ° C, and 90 ° C showed sufficient shrinkage with a short heating time, and it became clear that the relaxation was very small after the heat shrinkage step. And since the amount of loosening is small in this way, a segmented semiconductor chip and an individual piece of adhesive can be fixed stably on a tape for wafer processing, and the adjacent chips do not come in contact with each other and break or come in contact with each other. It became clear that it showed good pick-up property. In addition, since sufficient shrinkage is exhibited by a short heating time, the adhesive layer 13 and the pressure-sensitive adhesive layer 12 are in close contact with each other by applying an excessive amount of heat, and there is no fear that the pick-up property is lowered.

In the case where the Vicat softening point is 90 ° C or more, and the increase in stress due to heat shrinkage does not reach 9.0 MPa (Comparative Examples 1, 2, and 4 to 7), a long heating time is required to take the relaxation, and the relaxation after the heat shrinkage process There is much quantity, too, and pickup is bad.

In addition, about the comparative example 3, although it does not have a crosslinked structure, since the Vicat softening point is 50 degreeC or more and less than 90 degreeC, and the increase of the stress by heat contraction is 9 Mpa or more, the heat shrinkability showed favorable result. However, since the material is polyvinyl chloride tape, when incinerated after use, chlorinated aromatic hydrocarbons, which are dioxins and their analogues, may be generated and put a burden on the environment. On the other hand, since the base film 11 shown in Examples 1-5 has a crosslinked structure, since expandability is more isotropic and since content of a chlorine atom is less than 1 mass%, even if it incinerates and discards after use, Its analogues are chlorinated aromatic hydrocarbons, which do not place a burden on the environment.

In addition, the manufacturing process (B)-(D) mentioned above expands in the manufacturing method (A) of a semiconductor device except that it is already divided into individual semiconductor chips in an expanding process. The process equivalent to the heat shrink process and the pick-up process is performed. Therefore, it is clear that the result at the time of using the tape 10 for a wafer process of Examples 1-5 and Comparative Examples 1-7 becomes a result equivalent to the result shown in Table 1, Table 2, and the manufacturing method of a semiconductor device ( Also in B)-(D), using the wafer processing tape 10 of this invention is useful from a heat shrinkable property and a pickup property. Moreover, even when the tape 10 for a wafer process is provided only with the adhesive layer 12, it is clear that it will become a result equivalent to the result shown in Table 1, Table 2.

10: Tape for Wafer Processing
11: base film
12: pressure-sensitive adhesive layer
13: adhesive layer
14: surface protective film
20: ring frame
21: stage
22: lifting member
25: heater table
26: adsorption table
27: ultraviolet light source
28: heat shrink zone
29: hot air nozzle
30: modified area
41: lifting pin
42: adsorption collet
50: 10 g weight conforming to JIS B7609
W: Semiconductor wafer
C: semiconductor chip
a: relaxation amount

Claims (11)

It is an expandable wafer processing tape used when dividing an adhesive bond layer along a chip by an expand,
Having a base film and the adhesive layer provided on the said base film,
The base film is made of a thermoplastic crosslinked resin having a Vicat softening point defined by JIS K7206 of 50 ° C or more and less than 90 ° C,
After the 10% extension | stretching distortion is given to the test piece of the said tape for a wafer process by the method defined by JISK7162, the process of heating until the temperature of the said test piece reaches 70 degreeC with the distance between chucks being kept constant, The said In the process of holding a test piece at the temperature of 70 degreeC for 1 minute, and then returning the said test piece to room temperature, the maximum heat shrinkage stress of the said test piece is 9 Mpa or more larger than the initial stress just before a heating start, Wafer processing tape. The tape for wafer processing of Claim 1 which laminated | stacked the adhesive bond layer on the said adhesive layer. The wafer processing tape according to claim 1, wherein the thermoplastic crosslinked resin is an ionomer resin obtained by crosslinking an ethylene- (meth) acrylic acid binary copolymer with metal ions. The wafer processing tape according to claim 1, wherein the thermoplastic crosslinked resin is an ionomer resin obtained by crosslinking an ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester terpolymer with metal ions. The tape for wafer processing according to claim 1, wherein the thermoplastic crosslinked resin is a resin obtained by crosslinking low density polyethylene by electron beam irradiation, or a resin obtained by crosslinking ultra low density polyethylene by electron beam irradiation. The wafer processing tape according to claim 1, wherein the thermoplastic crosslinked resin is a resin obtained by crosslinking an ethylene-vinyl acetate copolymer by electron beam irradiation. The tape for wafer processing according to claim 1, wherein the thermoplastic crosslinked resin has a content of chlorine atoms of less than 1% by mass. The said wafer processing tape is a process of bonding a surface protection tape to the surface of the semiconductor wafer in which the circuit pattern was formed, (b) the backgrinding process of grinding the back surface of the said semiconductor wafer, and (c) Bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while the semiconductor wafer is heated at 70 to 80 ° C; (d) removing the surface protection tape from the surface of the semiconductor wafer; e) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption inside the wafer; and (f) expanding the wafer processing tape to thereby expand the semiconductor wafer and Dividing the adhesive layer along a dividing line to obtain a plurality of semiconductor chips containing the adhesive layer; and (g) the wafer processing te Heating and shrinking a portion not overlapping with the semiconductor chip of the wafer to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip; and (h) a tape for processing the semiconductor chip including the adhesive layer. It is used for the manufacturing method of the semiconductor device containing the process of picking up from the adhesive layer of the wafer, The tape for a wafer process characterized by the above-mentioned. The said wafer processing tape is a process of bonding a surface protection tape to the surface of the semiconductor wafer in which the circuit pattern was formed, (b) the backgrinding process of grinding the back surface of the said semiconductor wafer, and (c) Bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while the semiconductor wafer is heated at 70 to 80 ° C; (d) removing the surface protection tape from the surface of the semiconductor wafer; A step of irradiating a laser beam along a dividing line from the surface of the semiconductor wafer and dividing it into individual semiconductor chips; Obtaining a plurality of semiconductor chips including layers; and (g) a portion of the tape for wafer processing not overlapping with the semiconductor chips. Removing the loosening generated in the expand process by thermal contraction to maintain the gap of the semiconductor chip; and (h) picking up the semiconductor chip including the adhesive layer from the adhesive layer of the wafer processing tape. It is used for the manufacturing method of a semiconductor device, The tape for a wafer process characterized by the above-mentioned. The said wafer processing tape is a process of bonding a surface protection tape to the surface of the semiconductor wafer in which the circuit pattern was formed, (b) the backgrinding process of grinding the back surface of the said semiconductor wafer, and (c) Bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while the semiconductor wafer is heated at 70 to 80 ° C; (d) removing the surface protection tape from the surface of the semiconductor wafer; A) dividing the semiconductor wafer using a dicing blade along a dividing line and dividing the semiconductor wafer into individual semiconductor chips; and (f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips. Obtaining a plurality of semiconductor chips containing an adhesive layer; and (g) portions not overlapping with the semiconductor chips of the wafer processing tape. Removing the loosening generated in the expand process by heat shrinking to maintain the gap of the semiconductor chip; and (h) picking up the semiconductor chip including the adhesive layer from the adhesive layer of the wafer processing tape. It is used for the manufacturing method of a semiconductor device, The tape for a wafer process characterized by the above-mentioned. The tape for wafer processing according to claim 2, wherein the tape for wafer processing comprises (a) cutting a semiconductor wafer on which a circuit pattern is formed using a dicing blade to a depth less than the thickness of the wafer along a division line predetermined line, and (b) the semiconductor wafer. Bonding a surface protection tape to the surface; (c) grinding the back surface of the semiconductor wafer and dividing it into individual semiconductor chips; and (d) heating the semiconductor wafer at 70 to 80 ° C. Bonding the adhesive layer of the wafer processing tape to the back surface of the semiconductor chip; (e) removing the surface protection tape from the surface of the semiconductor wafer; and (f) expanding the wafer processing tape to expand the adhesive layer. Dividing the semiconductor chip into the semiconductor chips to obtain a plurality of semiconductor chips including the adhesive layer; and (g) the tape for wafer processing. Heat shrinking the portion which does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip; and (h) adhesive of the tape for wafer processing the semiconductor chip including the adhesive layer. It is used for the manufacturing method of a semiconductor device including the process of picking up from a layer, The tape for a wafer process characterized by the above-mentioned.

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