JPH05211234A - Pressure-sensitive adhesive sheet for sticking wafer and wafer dicing method - Google Patents

Abstract

PURPOSE:To reduce dicing fragments by using a polyolefin film irradiated with fixed quantities of electron beams or gamma-rays as a base material film. CONSTITUTION:The shape of a pressure-sensitive adhesive sheet 10 can take all shapes such as a tape shape, a label shape, etc. A film composed of a polyolefin resin is used as a base material film 1. The thickness of the base material film 1 is normally 40-200mum, preferably 60-150mum. A pressure-sensitive adhesive layer 2 is formed onto the base material film 1, but a base material sheet is irradiated previously with electron beams or gamma-rays before the pressure- sensitive adhesive layer 2 is formed. The dose of electron beams or gamma-rays is kept within a range of normally 1-80Mrad, preferably 3-50Mrad. When the polyolefin film is irradiated with electron beams or gamma-rays by such quantity, the generation of stringy dicing fragments can be reduced at the time of wafer dicing, and the pressure-sensitive adhesive sheet can be expanded without trouble.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a pressure-sensitive adhesive sheet for wafer sticking and a wafer dicing method, and more specifically,
The present invention relates to a pressure-sensitive adhesive sheet for wafer sticking and a wafer dicing method, which can reduce dicing dust generated when a semiconductor wafer is cut and separated into small pieces.

[0002]

TECHNICAL BACKGROUND OF THE INVENTION Semiconductor wafers such as silicon and gallium arsenide are manufactured in a large diameter state, and the wafer is cut (diced) into small pieces of an element and then transferred to a mounting step which is the next step. .. At this time, the semiconductor wafer is subjected to the steps of dicing, washing, drying, expanding, picking up, and mounting while being adhered to the adhesive sheet in advance.

In the steps from the dicing step of a semiconductor wafer to the picking up step, an adhesive sheet having an adhesive applied on a base material has been used. In such an adhesive sheet, a polyolefin film, a polyvinyl chloride film, or the like is used as a base material.

At the time of wafer dicing, the adhesive layer or a part of the substrate film may be cut together with the wafer, and dicing dust may be generated from the adhesive sheet to contaminate the wafer. The dicing debris generated when the polyolefin-based substrate film is scraped off by the dicing blade has a thread-like shape, and an adhesive is attached to the thread-like debris. If such thread-like waste adheres to the diced chips, it cannot be easily removed, and the yield rate of the chips decreases.

[0005]

DISCLOSURE OF THE INVENTION The present invention is intended to solve the problems associated with the prior art as described above, and in particular, when a polyolefin film is used as a substrate film, dicing scraps which are easily generated from an adhesive sheet. Is intended to be reduced.

[0006]

SUMMARY OF THE INVENTION A pressure-sensitive adhesive sheet for wafer sticking according to the present invention comprises a substrate and an adhesive layer, and as a substrate film,
It is characterized by using a polyolefin film irradiated with 1 to 80 Mrad of electron beam or γ (gamma) ray.

The wafer dicing method according to the present invention uses an electron beam or a γ-ray as a base material film when a wafer is adhered onto a wafer sticking pressure sensitive adhesive sheet composed of a base material and an adhesive layer to dice the wafer. Is 1-80 Mrad
By using the irradiated polyolefin-based film, the amount of dicing dust generated during wafer dicing is reduced.

[0008]

DETAILED DESCRIPTION OF THE INVENTION An example of the pressure-sensitive adhesive sheet for wafer attachment according to the present invention is a pressure-sensitive adhesive sheet 10 having a pressure-sensitive adhesive layer 2 formed on a base film 1 as shown in FIG. .. In order to protect the pressure-sensitive adhesive layer 2 before using the pressure-sensitive adhesive sheet 10, it is preferable to temporarily adhere the peelable sheet 3 to the upper surface of the pressure-sensitive adhesive layer 2 as shown in FIG.

The pressure-sensitive adhesive sheet 10 according to the present invention may have any shape such as a tape shape and a label shape. A film made of a polyolefin resin is used as the base film 1, and specifically, polyethylene, polypropylene, polymethylpentene, ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer, ethylene- Methyl (meth) acrylic acid ester, ethylene-ethyl (meth) acrylic acid copolymer, ethylene-ionomer copolymer, ethylene-vinyl alcohol copolymer,
A resin such as polybutene is used.

These polyolefin resins may be used alone or in a blend of two or more. Further, the base film 1 may be composed of one resin film as described above, or may be a laminate of two or more films.

The thickness of the base film 1 is usually 40 to 200 μm, preferably 60 to 150 μm.
Is. The pressure-sensitive adhesive layer 2 is formed on the base film 1, and the base sheet is irradiated with an electron beam or γ-ray before the formation of the pressure-sensitive adhesive layer 2. The electron beam or γ-ray irradiation amount is usually in the range of 1 to 80 Mrad, preferably 3
To 50 Mrad, particularly preferably 5 to 30 Mra
It is d. When the base film 1 is made of polyethylene, the irradiation amount of electron rays or γ rays is 10 to 30M.
It is preferably about rad. Further, when the base film 1 is made of an ethylene copolymer, the irradiation amount of electron rays or γ rays is preferably about 5 to 30 Mrad.

Here, the electron beam refers to a free electron flux, that is, a cathode ray. In order to irradiate the substrate film with an electron beam, specifically, an electron beam accelerator (including any type of high energy, low energy, and scanning) is used, and the generated electron beam under It is carried out by passing the film under the conditions.

Γ-rays are usually defined as
, A type of electromagnetic wave emitted during the decay of radioactive elements
Point to. To irradiate the base film with γ rays,
Is Co ⁶⁰Film is installed in the irradiation room that has
Then, the film is irradiated with a predetermined amount of γ-rays. This place
In this case, the film can be processed as a roll,
The above is advantageous.

By irradiating the polyolefin film with an electron beam or γ-ray in such an amount, it is possible to reduce the generation of thread-like dicing debris during wafer dicing, and the mechanical properties such as elasticity and strength of the base film 1 can be reduced. The pressure-sensitive adhesive sheet can be expanded without impairing the physical properties thereof. On the other hand, electron beam or γ
If the dose of the ray irradiation is less than 1 Mrad, the effect of the electron beam or γ-ray irradiation is insufficient, and a large amount of dicing dust may be generated at the time of dicing as in the case of no irradiation. When the irradiation dose of electron beams or γ rays exceeds 80 Mrad, mechanical properties such as elasticity and strength of the base film are impaired, the film may be broken during expanding, and the film deteriorates after irradiation. May occur.

In the present invention, the pressure-sensitive adhesive layer 2 is formed on the base film 1 irradiated with the electron beam or γ-ray as described above and used for dicing the wafer. This adhesive layer 2
Conventionally known adhesives can be widely used as the pressure-sensitive adhesive constituting the, but acrylic pressure-sensitive adhesives are preferable, and specifically,
An acrylic polymer selected from homopolymers and copolymers having an acrylic ester as a main constituent monomer unit, a copolymer with other functional monomer, and a mixture of these polymers are used. For example, as the acrylate ester, ethyl methacrylate, butyl methacrylate, 2-ethylhexyl methacrylate, glycidyl methacrylate, 2-hydroxyethyl methacrylate, and the like, and those in which the above methacrylic acid is replaced with acrylic acid, for example, are also preferable. Can be used.

Further, in order to improve the compatibility with the oligomer described later, a monomer such as acrylic acid or methacrylic acid, acrylonitrile, vinyl acetate or the like may be copolymerized. The molecular weight of the acrylic polymer obtained by polymerizing these monomers is 1.0 × 10 ^{5 to} 10.0 × 10 ⁵ , preferably 4.0 × 10 ^{5 to} 8.0 × 10 ⁵ . is there.

Further, by including a radiation-polymerizable compound in the pressure-sensitive adhesive layer as described above, the pressure-sensitive adhesive force can be lowered by irradiating the pressure-sensitive adhesive layer with radiation after cutting and separating the wafer. .. Examples of such radiation-polymerizable compounds include those disclosed in JP-A-60-196,95.
No. 6 and JP-A No. 60-223,139, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule capable of being three-dimensionally reticulated by light irradiation. Is widely used. Specifically, trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4- Butylene glycol diacrylate, 1,6-hexanediol diacrylate,
Polyethylene glycol diacrylate, commercially available oligoester acrylate, etc. are used.

Further, as the radiation-polymerizable compound, a urethane acrylate oligomer may be used in addition to the above acrylate compound. The urethane acrylate oligomer is a polyester type or polyether type polyol compound and a polyvalent isocyanate compound such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4. -Acrylate or methacrylate having a hydroxyl group, for example, a terminal isocyanate urethane prepolymer obtained by reacting xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc., such as 2-hydroxyethyl acrylate or 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate , 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc. Obtained by. This urethane acrylate-based oligomer is a radiation-polymerizable compound having at least one carbon-carbon double bond.

As such a urethane acrylate-based oligomer, the molecular weight is particularly 3,000 to 30,000, preferably 3,000 to 10,000, and more preferably 400.
It is preferable to use one having a thickness of 0 to 8000 because even if the surface of the semiconductor wafer is rough, the adhesive does not adhere to the surface of the chip when the wafer chip is picked up. When a urethane acrylate-based oligomer is used as a radiation-polymerizable compound, it is disclosed in JP-A-60-196,95.
As compared with the case of using a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in the molecule as disclosed in Japanese Patent Publication No. 6, an excellent adhesive sheet can be obtained. That is, the adhesive strength of the pressure-sensitive adhesive sheet before irradiation with radiation is sufficiently large, and after the irradiation of radiation, the adhesive strength is sufficiently reduced so that the pressure-sensitive adhesive does not remain on the chip surface at the time of picking up the wafer chip.

The mixing ratio of the acrylic pressure-sensitive adhesive and the urethane acrylate oligomer in the pressure-sensitive adhesive may be 50 to 900 parts by weight based on 100 parts by weight of the acrylic pressure-sensitive adhesive. preferable. In this case, the obtained adhesive sheet has a large initial adhesive force, and the adhesive force is greatly reduced after irradiation with radiation, and the wafer chip can be easily picked up from the adhesive sheet.

If desired, the pressure-sensitive adhesive layer 2 may contain, in addition to the above-mentioned pressure-sensitive adhesive and the radiation-polymerizable compound, a compound which is colored by irradiation with radiation. By including a compound to be colored in the pressure-sensitive adhesive 3 by such radiation, the pressure-sensitive adhesive sheet is colored after being irradiated with radiation, and therefore, the detection accuracy when the wafer chip is detected by the optical sensor is improved. Therefore, malfunction does not occur at the time of picking up a wafer chip. In addition, it is possible to obtain an effect that it is immediately visible by visual inspection whether or not the adhesive sheet is irradiated with radiation.

The compound that is colored by irradiation with radiation is a compound that is colorless or light-colored before irradiation with radiation, but is colored by irradiation with radiation, and a preferable specific example of this compound is a leuco dye. As the leuco dye, conventional triphenylmethane type, fluorane type, phenothiazine type, auramine type and spiropyran type dyes are preferably used. Specifically, 3- [N-
(P-Tolylamino)]-7-anilinofluorane, 3
-[N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino -6-Methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "-trisdimethylaminotriphenylmethanol, 4,4', 4"
-Trisdimethylaminotriphenylmethane and the like.

Examples of the color developer that is preferably used with these leuco dyes include conventionally used phenol formalin resin prepolymers, aromatic carboxylic acid derivatives, and electron acceptors such as activated clay. When changing the value, various known color formers can be used in combination.

Such a compound which is colored by irradiation with radiation may be once dissolved in an organic solvent or the like and then contained in the adhesive layer, or may be made into a fine powder and contained in the adhesive layer. .. This compound is added to the adhesive layer in an amount of 0.01 to
It is desirable to use in an amount of 10% by weight, preferably 0.5-5% by weight. If the compound is used in an amount exceeding 10% by weight, the radiation applied to the pressure-sensitive adhesive sheet may be excessively absorbed by the compound, so that the pressure-sensitive adhesive layer may be insufficiently cured. Is 0.01% by weight
If it is used in an amount less than the above range, the adhesive sheet may not be sufficiently colored during irradiation with radiation, and malfunction may easily occur during pickup of the wafer chip.

In some cases, the pressure-sensitive adhesive layer 2 may contain a light-scattering inorganic compound powder in addition to the above-mentioned pressure-sensitive adhesive and the radiation-polymerizable compound. By including such a light-scattering inorganic compound powder in the pressure-sensitive adhesive layer 2, even if the surface of an adherend such as a semiconductor wafer becomes gray or black for some reason, the pressure-sensitive adhesive sheet is irradiated with radiation such as ultraviolet rays. Then, even in the grayed or blackened part, its adhesive strength is sufficiently reduced,
Therefore, it is possible to obtain an effect that the adhesive does not adhere to the surface of the wafer chip at the time of picking up the wafer chip, and has sufficient adhesive force before irradiation with radiation.

This light-scattering inorganic compound is
V) or an electron beam (EB) or the like, which is a compound capable of diffusely reflecting this radiation, and specifically, silica powder, alumina powder, silica-alumina powder, mica powder Are exemplified. The light-scattering inorganic compound is preferably a compound that almost completely reflects the above-mentioned radiation, but of course, a compound that absorbs the radiation to some extent can also be used.

The light-scattering inorganic compound is preferably in the form of powder and has a particle size of 1 to 100 μm, preferably 1 to 2
It is preferably about 0 μm. The light-scattering inorganic compound is contained in the pressure-sensitive adhesive layer in an amount of 0.1 to 10% by weight, preferably 1 to 10% by weight.
It is preferably used in an amount of ˜4% by weight. If the compound is used in the pressure-sensitive adhesive layer in an amount of more than 10% by weight, the adhesive force of the pressure-sensitive adhesive layer may be decreased.
When the content is less than 5% by weight, when the semiconductor wafer surface is grayed or blackened, even if the portion is irradiated with radiation, the adhesive strength may not be sufficiently reduced and the adhesive may remain on the wafer surface at the time of pickup.

The pressure-sensitive adhesive sheet obtained by adding the light-scattering inorganic compound powder to the pressure-sensitive adhesive layer is used even when the surface of the semiconductor wafer is grayed or blackened for some reason. It is considered that the reason why the adhesive force of this part, when it is irradiated with radiation, is sufficiently lowered in this part is as follows. That is, the pressure-sensitive adhesive sheet 10 used in the present invention has the pressure-sensitive adhesive layer 2, but when the pressure-sensitive adhesive layer 2 is irradiated with radiation, the radiation-polymerizable compound contained in the pressure-sensitive adhesive layer 2 cures and its The adhesive strength will be reduced.
However, a grayed or blackened portion may occur on the semiconductor wafer surface for some reason. When the adhesive layer 2 is irradiated with radiation in such a case, the radiation passes through the adhesive layer 2 and reaches the wafer surface. However, if there is a grayed or blackened portion on the wafer surface, the radiation will be emitted at this portion. It is absorbed and no longer reflects. Therefore, the radiation that should originally be used for curing the pressure-sensitive adhesive layer 2 is absorbed in the grayed or blackened portions, and the curing of the pressure-sensitive adhesive layer 2 becomes insufficient, so that the adhesive strength is not sufficiently reduced. become. Therefore, it is considered that the adhesive may adhere to the chip surface when the wafer chip is picked up.

However, when the light-scattering inorganic compound powder is added to the pressure-sensitive adhesive layer 2, the irradiated radiation collides with the compound and changes its direction before reaching the wafer surface. For this reason, even if there is a grayed or blackened portion on the wafer chip surface, the diffusely reflected radiation sufficiently enters the area above this portion, and thus the grayed or blackened portion is also sufficiently cured. To do. For this reason,
By adding the light-scattering inorganic compound powder to the adhesive layer, even if there is a grayed or blackened portion on the surface of the semiconductor wafer for some reason, curing of the adhesive layer becomes insufficient at this portion. Therefore, the adhesive does not adhere to the chip surface when the wafer chip is picked up.

Further, in the present invention, abrasive grains may be dispersed in the base film. This abrasive grain has a grain size of 0.5-
The thickness is 100 μm, preferably 1 to 50 μm, and the Mohs hardness is 6 to 10, preferably 7 to 10. In particular,
Green carborundum, artificial corundum, optical emery, white alundum, boron carbide, chromium (III) oxide, cerium oxide, diamond powder and the like are used. Such abrasive grains are preferably colorless or white. Such abrasive grains are contained in the base film 2 in an amount of 0.5 to 70% by weight, preferably 5 to 50% by weight.
Present in an amount of. Such abrasive grains are particularly preferably used when the cutting blade is used at a depth that cuts not only the wafer but also the base film 2.

By including the above-mentioned abrasive grains in the substrate film, even if the cutting blade cuts into the substrate film and the adhesive adheres to the cutting blade, the abrasive effect of the abrasive grains causes The jam can be easily removed.

The initial adhesive strength can be set to an arbitrary value by mixing an isocyanate curing agent in the above-mentioned pressure-sensitive adhesive. As such a curing agent,
Specifically, a polyvalent isocyanate compound such as 2,4
-Tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate,
1,4-xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-
2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate and the like are used.

Further, in the case of UV irradiation in the above-mentioned pressure-sensitive adhesive, by mixing a UV initiator, the polymerization and curing time by UV irradiation and the UV irradiation amount can be shortened.

Specific examples of such UV initiators include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether,
Examples thereof include benzyl diphenyl sulfide, tetramethyl thiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl and β-chloranthraquinone.

The procedure of the wafer dicing method according to the present invention will be described below. When the peelable sheet 3 is provided on the upper surface of the adhesive sheet 10, the sheet 3 is removed,
Next, the pressure-sensitive adhesive layer 2 of the pressure-sensitive adhesive sheet 10 is placed face up, and as shown in FIG. 3, the semiconductor wafer A to be diced is attached to the upper surface of the pressure-sensitive adhesive layer 2. In this stuck state, the wafer A is subjected to various steps of dicing, cleaning and drying. At this time, since the wafer chip is sufficiently adhered and held on the adhesive sheet by the adhesive layer 2, the wafer chip does not fall off during the above steps.

Next, each wafer chip is picked up from the adhesive sheet and mounted on a predetermined base.
At this time, as shown in FIG. 4, prior to or at the time of picking up, the pressure sensitive adhesive layer 2 of the pressure sensitive adhesive sheet 10 is irradiated with ionizing radiation B such as ultraviolet rays (UV) or electron beams (EB) to obtain a pressure sensitive adhesive layer. The radiation-polymerizable compound contained in 2 is polymerized and cured. When the pressure-sensitive adhesive layer 2 is thus irradiated with radiation to polymerize and cure the radiation-polymerizable compound, the adhesive strength of the pressure-sensitive adhesive is greatly reduced, and only a slight adhesive strength remains.

The radiation of the pressure-sensitive adhesive sheet 10 is preferably performed from the surface of the base film 1 on which the pressure-sensitive adhesive layer 2 is not provided. Therefore, as described above, when UV is used as the radiation, the base film 1 needs to be light transmissive, but when EB is used as the radiation, the base film 1 is not necessarily light transmissive. No need.

As described above, after the adhesive layer 2 in the portion where the wafer chips A ₁ , A _2, ... Are provided is irradiated with radiation to reduce the adhesive force of the adhesive layer 2, the adhesive sheet 10 is attached. Transfer to a pickup station (not shown)
As shown in FIG. 2, the tip A ₁ ... to be picked up is pushed up by the push-up needle bar 4 from the lower surface of the substrate film 1 according to a conventional method, and the tip A ₁ ... is picked up by, for example, a suction collet 5, and this is picked up. Mount on a designated base. In this way, the wafer chip A
_When picking up ₁ , A ₂ ..., the adhesive can be easily picked up without adhering to the wafer chip surface, and good quality chips free of contamination can be obtained. Radiation irradiation can also be performed at the pickup station.

The irradiation of radiation does not necessarily have to be performed once at once over the entire sticking surface of the wafer A, and may be performed in several divided doses.
For each of the wafer chips A ₁ , A _2, ... Which are to be picked up, irradiation is performed by a radiation irradiation tube that irradiates only the back surface corresponding thereto, and the adhesive force of only the adhesive at that portion is reduced, and then the push-up needle Wafer chips A ₁ , A ₂ ...
You can also push up and pick up sequentially.
FIG. 6 shows a modification of the above-mentioned radiation irradiation method. In this case, the inside of the push-up needle bar 4 is hollow, and the radiation generation source 6 is provided in the hollow portion to simultaneously perform radiation irradiation and pickup. In this way, the device can be simplified and at the same time the pick-up operation time can be shortened.

[0040]

As described above, according to the present invention, it is possible to prevent the generation of dicing scraps, and also to maintain the elasticity and strength of the polyolefin film, so that the expanding can be performed easily. be able to.

[0041]

EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples.

[0042]

EXAMPLES AND COMPARATIVE EXAMPLES 100 parts by weight of acrylic adhesive (copolymer of n-butyl acrylate and acrylic acid), 100 parts by weight of urethane acrylate oligomer having a molecular weight of 8000, and 10 parts by weight of curing agent (diisocyanate). And 5 parts by weight of a UV curing reaction initiator (benzophenone type) were mixed to prepare an adhesive composition.

This pressure-sensitive adhesive composition was applied onto a substrate film irradiated with electron beams or γ-rays so as to have a thickness of 10 μm to prepare a pressure-sensitive adhesive sheet. For comparison, a pressure-sensitive adhesive composition was similarly applied to each of the substrate films that had not been irradiated with an electron beam to prepare pressure-sensitive adhesive sheets.

Here, an ethylene vinyl acetate copolymer (EVA) film, an ethylene ionomer copolymer film, and a linear low density polyethylene film (each having a thickness of 100 μm) were used as the substrate film.

The electron beam irradiation was performed under the following conditions. Electron beam irradiation amount: 5 to 30 Mrad Irradiation dose rate: 50 mA Radiation source (apparatus): Low energy electron beam accelerator Further, γ ray irradiation was performed under the following conditions.

Gamma ray irradiation amount: 5 to 30 Mrad Irradiation dose rate: 1 Mrad / hour Radiation source (apparatus): Co ^{60 A} 5-inch silicon wafer is attached on the adhesive layer of the obtained adhesive sheet, and wafer dicing is performed. Was done. The dicing conditions at this time are as follows.

Dicing conditions Dicer: 2H / 6T made by DISCO Blade rotation speed: 40,000 r. p. m. Dicing speed: 100 mm / sec Dicing depth: 30 μm from tape surface Blade thickness: 50 μm Dicing size: 5 mm x 5 mm Cut mode: Down cut After dicing, a magnifying glass for foreign matter on the wafer (chip) (1
The number of foreign matters (dicing scraps) was counted by observing at 00 magnification. The results are shown below.

[0048]

[Table 1]

[Brief description of drawings]

FIG. 1 is a schematic sectional view of a pressure-sensitive adhesive sheet for wafer sticking according to the present invention.

FIG. 2 is a schematic sectional view of a pressure-sensitive adhesive sheet for wafer sticking according to the present invention.

FIG. 3 is an explanatory diagram of a wafer dicing method according to the present invention.

FIG. 4 is an explanatory diagram of a wafer dicing method according to the present invention.

FIG. 5 is an explanatory diagram of a wafer dicing method according to the present invention.

FIG. 6 is an explanatory diagram of a wafer dicing method according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Base material film 2 ... Adhesive layer 3 ... Peeling sheet 4 ... Push-up needle 5 ... Suction collet 6 ... Radiation source A ... Wafer B ... Radiation

Claims (4)

[Claims] 1. A wafer sticking pressure-sensitive adhesive sheet comprising a base film and a pressure-sensitive adhesive layer, wherein the base film has an electron beam or γ-ray of 1 to 80 Mr.
A pressure-sensitive adhesive sheet for wafer sticking, which uses an ad-irradiated polyolefin film. 2. The polyolefin-based film comprises polyethylene, polypropylene, polymethylpentene, ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer, ethylene-methyl (meth) acrylic acid ester, ethylene- The wafer sticking adhesive according to claim 1, which is made of a resin selected from the group consisting of an ethyl (meth) acrylic acid copolymer, an ethylene / vinyl alcohol copolymer, polybutene and an ethylene-ionomer copolymer. Sheet. 3. When a wafer is attached to a wafer-adhesive pressure-sensitive adhesive sheet comprising a base film and an adhesive layer and the wafer is diced, an electron beam or a γ ray is 1 to 80 Mr as the base film.
A wafer dicing method characterized in that the amount of dicing dust generated during wafer dicing is reduced by using an ad-irradiated polyolefin film. 4. The polyolefin film is polyethylene, polypropylene, polymethylpentene, ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer, ethylene-methyl (meth) acrylic acid ester, ethylene- The wafer dicing method according to claim 3, wherein the resin is selected from the group consisting of ethyl (meth) acrylic acid copolymer, ethylene / vinyl alcohol copolymer, polybutene and ethylene-ionomer copolymer.