JPS63205383A - Tacky sheet for sticking stick wafer - Google Patents

Abstract

PURPOSE:To obtain the title sheet which will not cause the clogging of a cutting blade even when cut off by the full cut method and therefore will not shorten the life of a cutting blade, by either forming a tacky layer is which specified abrasive grains have been dispersed on a base material by coating, or providing an abrasive grain layer containing the said abrasive grains between a base material and a tacky layer. CONSTITUTION:A tacky layer 3 is formed on a base material 2 comprising a film of synthetic resin, such as PE, PP or PVC, by applying a tacky composition prepared by dispersing abrasive grains 4 having a particle diameter of 0.5-100mum and a Mohs hardness of 6-10 in a Tacky adhesive comprising 10-90pts.wt. acrylic tackifier having an average molecular weight of 5.0X10<4>-10.0X10<5> and, as required, 90-10pts.wt. radiation-polymerizable compound, such as a urethane acrylate oligomer, to the base material 2, thus giving the title sheet 1. Optionally, an acrylic tacky layer 3 having, if required, a radiation-polymerizable compound incorporated therein is formed on the base material 2 by coating, with an abrasive grain layer 5 of a thickness of 1-150mum containing 10-100wt.% aforementioned abrasive grains 4 lying therebetween, giving the title sheet.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pressure-sensitive adhesive sheet for pasting wafers, and more particularly to a pressure-sensitive adhesive sheet for pasting wafers used when cutting and separating semiconductor wafers into small pieces.

Day-1 of the Northern Hebini. Semiconductor wafers such as beaten silicon and gallium arsenide are manufactured in a large diameter state, and after this wafer is cut and separated (diced) into small element pieces, it is transferred to the next process, a mounting process. At this time, the semiconductor wafer is previously attached to an adhesive sheet and subjected to the following steps: dicing, cleaning, drying, expanding, picking up, and mounting.

The adhesive sheet used in such a semiconductor wafer dicing process has conventionally been one in which an acrylic or other adhesive layer is provided on a base material such as vinyl chloride or polypropylene.

By the way, in order to cut and separate a semiconductor wafer with a cutting blade using the above-mentioned adhesive sheet, a half-cut method in which about half the thickness of the semiconductor wafer is cut has been mainly adopted. However, this half-cut method has a problem in that it requires an operation to further divide the wafer that has not been cut by the cutting plate.

In order to solve these problems, a full cut method is being adopted in which the wafer is completely cut by a cutting blade. With this full-cut method, the wafer is completely cut, so there is no need to divide the wafer, but the cutting blade digs into the adhesive layer when cutting the wafer.
A new problem arises in that the adhesive adheres to the cutting blade and causes clogging, making it impossible to cut the wafer with the cutting blade. Cutting blades with adhesives adhered to them are brought into contact with a so-called dresser board in order to remove the adhesive and restore their sharpness, but even if such an operation is adopted, the blade will not cut properly. The life of the blade is about 1/10 that of the half-cut method.

Shortening the lifespan of the cutting blade not only requires a new expensive cutting blade, but also causes the problem that it takes time and effort to replace the cutting blade. This is because precision is required when replacing the cutting blade.

As mentioned above, there is a need to cut wafers using the full-cut method using a cutting blade, but at present, there is a major problem in that when the full-cut method is adopted, the life of the cutting blade is significantly shortened. There is.

The present invention is an attempt to solve the problems associated with the conventional technology as described above, and is to cut and separate a semiconductor wafer attached to an adhesive sheet using a cutting blade in a full-cut method. To provide an adhesive sheet for pasting wafers, which does not cause clogging due to a large amount of adhesive adhering to the cutting blade, and does not shorten the life of the cutting blade due to the polishing effect of abrasive grains. It is intended to.

Kosu Example Summary: The first adhesive sheet for wafer attachment according to the present invention is a pressure-sensitive adhesive sheet for wafer attachment formed by coating an adhesive layer on a base material surface, in which the adhesive layer has a particle diameter of 0. It is characterized by easy dispersion of abrasive grains having a diameter of 5 to 100 μm and a Mohs hardness of 6 to 1°.

Further, the second adhesive sheet for wafer adhesion according to the present invention is an adhesive sheet for wafer adhesion formed by applying an adhesive layer on three sides of a base material, in which the particle size is small between the base material and the adhesive layer. 0.5
It is characterized by providing an abrasive grain layer containing abrasive grains having a diameter of 100 μm and a Mohs hardness of 6 to 10.

The adhesive sheet for wafer adhesion according to the present invention is an adhesive sheet for wafer adhesion formed by coating an adhesive layer on a base material surface, and in which abrasive grains having a specific particle size and hardness are dispersed in the adhesive layer. Alternatively, since an abrasive layer containing abrasive grains as described above is provided between the base material and the adhesive layer, the semiconductor wafer attached to the adhesive sheet can be cut and separated using a full cut method using a cutting blade. However, due to the abrasive effect of the abrasive grains, a large amount of adhesive will not adhere to the cutting blade and cause clogging, and therefore the life of the cutting blade will not be shortened.

Full use! Below, the adhesive sheet for wafer adhesion according to the present invention will be specifically explained.

As shown in FIG. 1, the first adhesive sheet for wafer adhesion according to the present invention consists of a base material 2 and an adhesive layer 3 provided on the surface of the base material 2. is abrasive grain 4
are distributed.

Further, the second wafer adhesion adhesive sheet 1 according to the present invention is
As shown in FIG. 2, it consists of a base material 2 and an adhesive layer 3 provided on the surface thereof, and an abrasive grain layer 5 containing abrasive grains 4 is provided between the substrate 2 and the adhesive layer 3. is provided.

The shape of the pressure-sensitive adhesive sheet according to the present invention can be any shape such as a tape shape or a label shape. As the base material 2, a material having excellent water resistance and heat resistance is suitable, and a synthetic resin film is particularly suitable. As will be described later, in the pressure-sensitive adhesive sheet of the present invention, when irradiation with radiation such as EB+UV is performed during its use, in the case of EB irradiation, the base material 2 does not need to be transparent; When using with
Must be a transparent material.

Specific examples of such a base material 2 include polyethylene film, polypropylene film, polyvinyl chloride film, polyethylene terephthalate film, polybutylene terephthalate film, polybutene film, polybutadiene film, polyurethane film, polymethylpentene film, and ethylene film. Vinyl acetate film is used. Further, a polymer film containing a compound having a carboxyl group as a polymer constitutional unit or a laminate of this and a general-purpose polymer film can also be used.

If it is necessary to perform an expanding process after dicing a semiconductor wafer, it is preferable to use a synthetic resin film that is stretchable in the length and width directions, such as polyvinyl chloride or polypropylene, as the base material, as in the past. .

As the adhesive, conventionally known adhesives such as rubber-based or acrylic-based adhesives can be widely used, but acrylic-based adhesives are preferable. These include acrylic polymers selected from polymers and copolymers, copolymers with other functional monomers, and mixtures of these polymers. For example, as monomer acrylic esters, ethyl methacrylate, butyl methacrylate, methacrylic acid-2
-Ethylhexyl, glycidyl methacrylate, 2-hydroxyethyl methacrylate, and the like, and those in which the above-mentioned methacrylic acid is replaced with acrylic acid, for example, can also be preferably used. In order to prevent the adhesive from adhering to the back surface of the wafer, it is preferable to use a low-tack adhesive.

Furthermore, in order to increase the compatibility with the oligomer described later, (
Monomers such as meth)acrylic acid, acrylonitrile, and vinyl acetate may be copolymerized.

The molecular weight of the acrylic polymer obtained by polymerizing these monomers is 5. OXI. 04～]0. ○×105, preferably 2. OXI, 05~8.0XIO”
It is.

By including a radiation-polymerizable compound in the adhesive layer as described above, the adhesive force can be reduced by irradiating the adhesive layer with radiation after cutting and separating the wafer. Such radiation polymerizable compounds include:
For example, as disclosed in JP-A-60-196,956 and JP-A-60-223,139, a photopolymerizable carbon-carbon double bond is formed in a molecule that can be formed into a three-dimensional network by light irradiation. Low molecular weight compounds having at least two or more are widely used, specifically, trimethylolpropane acrylate, tetramethylolmethanetetraacrylate, pentaerythritol triacrylate,
Pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1.4
-Butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, etc. are used.

Further, as the radiation polymerizable compound, in addition to the above-mentioned acrylate compounds, urethane acrylate oligomers can also be used. The urethane acrylate oligomer is composed of a polyol compound such as a polynisder type or a polyether type, and a polyvalent isocyanate compound such as 2,4-tolylene diisocyanate, 2,6-)
A terminal isocyanate urethane prepolymer obtained by reacting lylene diisocyanate, 1,3-xylylene diisocyanate, 1゜4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc. has a hydroxyl group. It is obtained by reacting (meth)acrylates such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, and polyethylene glycol meth)acrylate. This urethane acrylate oligomer is a radiation polymerizable compound having at least one carbon-carbon double bond.

As such urethane acrylate oligomer,
In particular, the molecular weight is 3,000 to 10,000, preferably 4,000.
It is preferable to use a material having a value of 10-8000 because the adhesive will not adhere to the chip surface when the wafer chip is picked up even if the surface of the semiconductor wafer is rough. In addition, when using urethane acrylate oligomers as radiation polymerizable compounds,
Extremely superior adhesive sheet compared to the case of using a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in the molecule as disclosed in Publication No. 0-196,956. is obtained. That is, the adhesive strength of the adhesive sheet before irradiation with radiation is sufficiently large, and the adhesive strength decreases sufficiently after irradiation with radiation, so that no adhesive remains on the chip surface when a wafer chip is picked up.

The compounding ratio of the acrylic adhesive and the radiation polymerizable compound such as urethane acrylate oligomer in the adhesive in the present invention is 90 to 10 parts by weight of the radiation polymerizable compound to 10 to 90 parts by weight of the acrylic adhesive. Preferably, it is used in an amount in the range of 50%. In this case, the resulting pressure-sensitive adhesive sheet has a high initial adhesive strength, but after radiation irradiation, the adhesive strength decreases significantly, and wafer chips can be easily picked up from the pressure-sensitive adhesive sheet.

In the first adhesive sheet for wafer attachment 1 according to the present invention, abrasive grains 4 are dispersed in the adhesive layer 3.

The abrasive grains 4 have a particle size of 0.5 to -00 μm, preferably 1 to 50 μm, and a Mohs hardness of 6 to 10, preferably 7 to 10. Specifically, green carborundum, artificial corundum, optical emery, white alundum, boron carbide, frome oxide (■), cerium oxide, diamond howder, etc. are used. It is preferable that such abrasive grains 4 are colorless or white.

Such abrasive grains 4 are contained in the adhesive layer in an amount of 0.5 to 60% by weight.
Preferably it is present in an amount of 3 to 30% by weight.

Further, in the second wafer bonding adhesive sheet 1 according to the present invention, an abrasive grain layer 5 containing the abrasive grains 4 as described above and the adhesive as described above is provided. The thickness of this abrasive grain layer 5 is 1 to 1
The thickness is about 50 μm, preferably about 5 to 80 μm. In addition, in the abrasive grain layer 5, the abrasive grain 4 is 10 to 100% by weight.
Preferably it is present in an amount of 30-80% by weight.

The second wafer adhesion adhesive sheet 1 according to the present invention is particularly preferably used when the cutting blade is used at a depth that cuts not only into the wafer but also into the base material 2.

By including the abrasive grains 4 as described above in the adhesive layer 3 or by providing the abrasive grain layer 5 containing the abrasive grains 4, the cutting blade cuts into the adhesive layer 3 and the adhesive layer 3 is attached to the cutting blade. Even if it gets stuck, the clogging can be easily cleared due to the abrasive effect of the abrasive grains.

Further, in the present invention, a compound that is colored by radiation irradiation can also be included in the adhesive layer. Such compounds that are colored by radiation irradiation are colorless or light-colored before radiation irradiation, but become colored by radiation irradiation, and preferred specific examples of these compounds include leuco dyes. As the leuco dye, conventional triphenylmethane-based, fluoran-based, phenothiazine-based, olamine-based, and spiropyran-based dyes are preferably used. Specifically, 3-[N-(P-tolylamino)1-7
-anilinofluorane, 3-[N-(P-tolyl)-N
-Methylamino 1-7-anilinofluorane, 3-IN
-(P-tolyl)-N-ethylamino 1-7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone,
Examples include 4゜4゛,4"-trisdimethylaminotriphenylmethanol, 4,4°,4"-)risdimethylaminotriphenylmethane, and the like.

Color developers that are preferably used with these leuco dyes include electron acceptors such as conventionally used initial polymers of phenol-formalin resin, aromatic carboxylic acid derivatives, and activated clay. In some cases, various known coloring agents may be used in combination.

Such a compound that is colored by radiation irradiation may be dissolved in an organic solvent or the like and then included in the adhesive layer, or may be made into a fine powder and included in the adhesive layer. This compound is desirably used in the adhesive layer in an amount of 0.01 to 10% by weight, preferably 0.5 to 5% by weight. If the compound is used in an amount exceeding 10% by weight, the radiation applied to the adhesive sheet will be absorbed too much by the compound, resulting in insufficient curing of the adhesive layer, which is undesirable. If it is used in an amount less than .01% by weight, the adhesive sheet may not be sufficiently colored during radiation irradiation, and malfunctions may easily occur when picking up wafer chips, which is not preferable.

Further, by mixing an isocyanate curing agent into the above-mentioned pressure-sensitive adhesive, the initial adhesive strength can be set to an arbitrary value. Examples of such curing agents include polyvalent isocyanate compounds, such as 2,4-tolylene diisocyanate, 2,6-)lylene diisocyanate,
L34 silylene diisocyanate, 1,4-4 silylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate isophorone diisocyanate, dicycloxylmethane-4,4''-diisocyanate, dicyclohexylmethane-2,4''-
Diisocyanate, lysine isocyanate, etc. are used.

Furthermore, in the above adhesive, in the case of UV irradiation, UV
By incorporating an initiator, it is possible to reduce the polymerization and curing time due to UV irradiation and the amount of U2 irradiation.

Specifically, such UV initiators include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, β - Examples include chloranthraquinone.

The method of using the adhesive sheet according to the present invention will be explained below.

Adhesive sheet according to the present invention] - If a releasable sheet is provided on the upper surface, remove the sheet, then place the adhesive sheet 1 with the adhesive layer 3 facing upward, and A semiconductor wafer A to be diced is attached to the upper surface of 3. A dicing process is applied to the wafer A in this adhered state.

At this time, the cutting blade completely cuts the wafer A,
The adhesive layer 3 is reached. However, in the adhesive sheet 1 according to the present invention, since the adhesive layer 3 contains abrasive grains 4 or is provided with an abrasive grain layer 5 containing abrasive grains 4, the abrasive grains 4 act to cut the adhesive sheet. Adhesion of the adhesive to the blade is reduced, and even if adhesive adheres, the blade can be sharpened by the abrasive action of the abrasive grains, so the life of the cutting blade is not significantly shortened.

After the dicing process, cleaning, drying, and expanding processes are applied to the wafer. At this time, since the wafer chips are sufficiently adhered and held to the adhesive sheet by the adhesive layer 3, the wafer chips do not fall off during each of the above steps.

Next, each wafer chip is picked up from the adhesive sheet and mounted on a predetermined base. However, if the adhesive layer 3 contains a radiation-polymerized compound, the wafer chips are (U
V) Alternatively, the adhesive layer 3 of the adhesive sheet 1 is irradiated with ionizing radiation B such as an electron beam (EB), and the radiation polymerizable compound contained in the adhesive layer 3 is polymerized and cured. When the radiation-polymerizable compound is polymerized and cured by irradiating the adhesive layer 3 with radiation in this manner, the adhesive strength of the adhesive is greatly reduced, and only a small amount of adhesive strength remains.

It is highly recommended that the adhesive sheet 1 be irradiated with radiation from the side of the base material 2 on which the adhesive layer 3 is not provided. Therefore, as mentioned above, when using UV as radiation, the base material 2 needs to be light-transparent, but when using EB as radiation, base material 2 does not necessarily need to be light-transparent. do not have.

After irradiating the adhesive layer 3 in the area where the wafer chips A1, A2, etc. are provided with radiation to reduce the adhesive force of the adhesive layer 3, the adhesive sheet 1 is picked up. The chip A1 to be picked up is pushed up from the lower surface of the base material 2 by the push-up needle rod 6 according to a conventional method.
This chip A... is picked up by air tweezers 7, for example, and mounted on a predetermined base. In this way, the wafer chips AI, A
When picking up 2..., the wafer chip surface can be easily picked up without any adhesive attached to it, and good quality chips without contamination can be obtained.

Note that radiation irradiation can also be performed at a pickup station.

It is not necessarily necessary to irradiate the entire surface of the wafer A to which it is attached at once, and the radiation may be irradiated partially several times. For example, the wafer chip AI to be picked up may be irradiated several times.

After irradiating each piece of A2 with a radiation irradiation tube that irradiates only the corresponding back surface to reduce the adhesive force of the adhesive on that part, the wafer chip is removed using the push-up needle rod 5. It is also possible to sequentially pick up A+, A2, etc. by pushing them up. FIG. 6 shows a modification of the above radiation irradiation method; in this case,
The inside of the push-up needle rod 6 is hollow, and the radiation source 8 is provided in the hollow part so that radiation irradiation and pick-up can be performed simultaneously.In this way, the device can be simplified and the pick-up operation time can be reduced. Can be shortened.

Note that in the above semiconductor wafer processing, the expanding process may not be performed, and the wafer chips AI, A2, . . . can be picked up immediately after dicing, cleaning, and drying.

Effects of the Invention The adhesive sheet for wafer adhesion according to the present invention is an adhesive sheet for wafer adhesion formed by coating an adhesive layer on a base material surface, in which abrasive grains having a specific particle size and hardness are contained in the adhesive layer. Since the abrasive grain layer containing abrasive grains as described above is provided between the base material and the adhesive layer, the semiconductor wafer can be fully cut with a cutting blade while attached to the adhesive sheet. -20~ Even when cutting and separating using the above-mentioned method, a large amount of adhesive adheres to the cutting blade and clogging is unlikely to occur, and therefore the life of the cutting blade is not significantly shortened.

EXAMPLES The present invention will be explained below with reference to Examples, but the present invention is not limited to these Examples.

Failed ↓ The average molecular weight is about 350,000. (Polystyrene equivalent)
100 parts by weight of acrylic adhesive (solid content 40% by weight)
, 70 parts by weight of a bifunctional urethane acrylate oligomer with an average molecular weight of about 6000 (solid content 60% by weight), 5 parts by weight of an isocyanate curing agent, and 4 parts by weight of benzophenone, and further average particle A pressure-sensitive adhesive composition was prepared in which 1-0 parts by weight of carborundum having a diameter of 5 μm was uniformly dispersed.

This composition was transfer-coated onto a low-density polyethylene film having a thickness of 100 μm to prepare a pressure-sensitive adhesive sheet for wafer attachment having a pressure-sensitive adhesive layer having a thickness of 20 μm.

A silicon wafer with a thickness of 300 μm and a diameter of 5 inches was attached to this adhesive sheet, and a dicing saw was used with a blade rotation speed of 30,000 and a cutting depth of 250 μm.
A silicon chip with a size of 0.35 mm x 0.35 mm was cut into half.

When wafers were processed continuously using this half-cut method, the blade became so worn after about 40,000 lines that it had to be replaced.

In addition, ultraviolet rays (UV) are irradiated from the base material surface of the diced wafer-fixing adhesive sheet for 2 seconds using an air-cooled high-pressure mercury lamp (80 W/am) and an irradiation distance of 10 (7)), and then after finishing the breaking, die bonding is performed. As a result,
Both chips were picked up with good accuracy.

In Example 1, the cutting depth by the blade was 32 mm.
The size is 0.35 with a dicing saw set to 0 μm.
A silicon chip measuring mm x 0.35 mm was fully cut. In other words, when wafers were processed continuously using this full-cut method that cuts down to the adhesive layer, there was a lot of adhesive attached at about 32,000 lines, and the blade could not be cut, so the blade had to be replaced.

Next, UV irradiation and die bonding were performed under the same conditions as in Example], and the product was picked up without any problem.

Moreover, no sticky adhesive was observed on the back surface of the peeled wafer chip when visually inspected.

↓ A pressure-sensitive adhesive sheet was formed in the same manner as in Example 1 except that no carborundum was added to the pressure-sensitive adhesive composition,
A 5-inch diameter silicon wafer with a thickness of 300 μm was fully cut into chips with a size of 0.35 mm×0.35 mm using a dicing saw with a cutting depth of the blade set to 320 μm.

As a result, many cracks appeared on the chip around the 10,000 line, and upon checking, it was found that adhesive debris mixed with diamond particles from the blade had adhered to the chip surface, and the cause was that the adhesive that had become clogged during cutting was caused by diamond particles. It was easy to infer that -23= was present when the particles were stripped off.

Implementation ■ Niacrylic adhesive (copolymer of n-butyl acrylate, vinyl acetate, and acrylic acid) 100 parts by weight (solid content 37
A pressure-sensitive adhesive composition was prepared in which 20 parts by weight of artificial corundum having an average particle size of 0 μm were uniformly dispersed, 3 parts by weight of an ethyleneimine curing agent, and 20 parts by weight of artificial corundum having an average particle size of 0 μm.

This composition was transfer-coated onto a vinyl chloride film having a thickness of 80 μm to prepare a pressure-sensitive adhesive sheet for attaching wafers having a pressure-sensitive adhesive layer having a thickness of 30 μm. Using the same wafer and dicing saw conditions as in Example 2, the wafer was fully cut to a cutting depth of 320 μm.

When wafers were continuously diced, up to about 34,000 lines could be processed without any trouble.

Comparative Example 2 An adhesive sheet was prepared in the same manner as in Example 3 except that no artificial corundum was added to the adhesive composition,
After bonding the same wafer, it was also fully cut to a cutting depth of 320 μm.

At around the 8,000 line, adhesive particles mixed with diamond particles from the blade began to adhere to the tip surface, and the sharpness of the blade suddenly decreased.

Implementation [4 100 parts by weight of polynisdel binder resin has a particle size of 4
An abrasive layer forming composition prepared by uniformly dispersing 100 parts by weight of 0 μm chromium (I) oxide was applied onto a 40 μm thick polyethylene terephthalate film to create a sheet 1 with an abrasive layer of 50 μm. Na.

Next, an adhesive composition consisting of 100 parts by weight (solid content: 37% by weight) of an acrylic adhesive (a copolymer of n-butyl acrylate, vinyl acetate, and acrylic acid) and 3 parts by weight of an ethyleneimine curing agent was applied to a sheet. 10μ thick on the abrasive layer surface
Create a pressure-sensitive adhesive sheet for wafer attachment with a total thickness of 100 μm.

Using the same wafer and dicing saw conditions as in Example 2, the wafer was fully cut to a cutting depth of 330 μm.

When dicing wafers in succession, it was possible to process up to approximately 30,000 lines with the same blade without any trouble.

[Brief explanation of the drawing]

FIGS. 1 and 2 are cross-sectional views of the adhesive sheet according to the present invention, and FIGS. 3 to 6 are explanatory views when the adhesive sheet is used from the dicing process to the pick-up process of semiconductor wafers. . DESCRIPTION OF SYMBOLS 1... Adhesive sheet, 2... Base material, 3... Adhesive layer, 4... Abrasive grain, 5... Abrasive grain layer, A... Wafer, r
3...Radiation. Agent Patent Attorney Shunbetsu Meiki 1 Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

[Scope of Claims] 1) In a pressure-sensitive adhesive sheet for wafer bonding formed by coating an adhesive layer on a base material surface, the adhesive layer contains particles having a particle size of 0.5 to 10.
An adhesive sheet for wafer attachment, characterized in that abrasive grains having a particle size of 0 μm and a Mohs hardness of 6 to 10 are dispersed therein. 2) In the adhesive sheet for wafer adhesion, which is formed by coating an adhesive layer on the base material surface, there is a particle size of 0 between the base material and the adhesive layer.
．． A pressure-sensitive adhesive sheet for wafer attachment, comprising an abrasive grain layer containing abrasive grains having a diameter of 5 to 100 μm and a Mohs hardness of 6 to 10.