JP2015220377A - Adhesive film integrated surface protective film and method for manufacturing semiconductor chip using adhesive film integrated surface protective film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide: an adhesive film integrated surface protective film capable of highly accurately and simply manufacturing a semiconductor chip without using an underfill and an NCP; and a method for manufacturing a semiconductor chip using an adhesive film integrated surface protective film.SOLUTION: In a manufacturing process for a semiconductor chip, a semiconductor wafer 1 used in a flip-chip mounting process and having a bump electrode is subjected to rear face 1B grinding, and simultaneously or at the following step, the wafer is diced into chips (separated into individual pieces). There is provided an adhesive film integrated surface protective film 3 used in the manufacturing process for a semiconductor chip and having an adhesive layer 5 on a base material film 4, an adhesion film 6 being laminated on the adhesive layer. The base material film has at least one layer comprising a (meth)acrylic copolymer. There is also provided a method for manufacturing a semiconductor chip.

Description

  The present invention relates to an adhesive film-integrated surface protective tape used in a flip chip mounting process and a semiconductor chip manufacturing method using the adhesive film-integrated surface protective tape.

  In recent years, with the spread of IC cards and the rapid increase in capacity of USB memories, further reduction in thickness is desired as the number of stacked semiconductor chips increases. For this reason, it is necessary to reduce the thickness of a semiconductor chip, which has conventionally been about 200 to 350 μm, to a thickness of 50 to 100 μm or less. As a method of manufacturing a semiconductor chip that achieves such thinning of the semiconductor chip, a method of performing thin film grinding in a normal process using a special tape, or a predetermined depth from the surface side of the semiconductor wafer, which is called pre-dicing After forming the groove (half cut), a method of grinding from the back side is known. In the latter method, a thin chip can be efficiently manufactured by simultaneously grinding the back surface of the semiconductor wafer and dividing it into individual semiconductor chips. Further, by reducing the grinding stress to the semiconductor chip, there is an effect of improving the bending strength of the semiconductor chip. In particular, application to a device for grinding to a thin film having a thickness of 100 μm or less is being studied.

  The trend of increasing the diameter in addition to the thinning of semiconductor wafers has shown a noticeable tendency, particularly in the field of flash memory where NAND type and NOR type exist, and in the field of DRAM, which is a volatile memory. At present, grinding a 12-inch semiconductor wafer to a thickness of 100 μm or less has become a standard.

  Since memory devices have improved performance by stacking semiconductor chips, thin film grinding is essential. Therefore, a manufacturing method by a process called a pre-dicing method specialized in manufacturing a thin film semiconductor chip (see Patent Document 1 and Patent Document 2), a pressure-sensitive adhesive sheet dedicated to the manufacturing process (see Patent Document 3), and a normal process Even if there is a special pressure-sensitive adhesive sheet for thin film grinding (see Patent Document 4), a dicing die-bond sheet (see Patent Document 5) or a tape having an adhesive layer (see Patent Document 6), it is inexpensive. It has become possible to manufacture high-performance flash memory and the like.

  On the other hand, in recent years, with the spread of smartphones, the improvement of mobile phone performance, the miniaturization and improvement of music players, etc., semiconductor wafers used for flip chip mounting using wafers with electrodes that take impact resistance into account have also been made thinner. The demand for is increasing. In addition, the wafer with bumps also needs to be thin-film ground to a thickness of 100 μm or less. Bumps for flip-chip connection have been increased in density to improve transfer speed, or bump heights have been reduced, and accordingly, the distance between bumps has become shorter. In recent years, flip-chip connection has also been implemented in DRAMs, so that the thinning of semiconductor wafers has been accelerated.

  Flip chip mounting has been attracting attention as a method for mounting a semiconductor element with a minimum area in response to recent downsizing and higher density of electronic devices. Bumps are formed on the electrodes of the semiconductor element used for the flip chip mounting, and the bumps are electrically joined to the wiring on the circuit board. As the composition of these bumps, solder or gold is mainly used. The solder bump or gold bump is formed on an exposed aluminum terminal connected to the internal wiring of the semiconductor chip by vapor deposition or plating.

  Bumped wafers have large irregularities on the surface, making thin film processing difficult, and if grinding is performed using normal tape, semiconductor wafer cracking may occur or the thickness accuracy of the semiconductor wafer will deteriorate. Or For this reason, the bumped wafer is ground using a specially designed surface protection tape (see Patent Document 7).

  However, since these surface protection tapes sufficiently absorb the bumps to ensure the grindability, it is very difficult to achieve compatibility with the peelability. The final thickness of the semiconductor chip that has been flip-chip mounted so far has a certain thickness of 200 μm or more, and since the rigidity was maintained, it could be peeled off somehow. However, recently, the finished thickness of the semiconductor wafer has been reduced, and the bump density has been increased, which has caused a problem that the tape cannot be easily peeled off. Moreover, if the peelability is ensured, the adhesion is insufficient, causing intrusion of grinding water and residual glue during back grinding. Further, since the adhesive adheres to the surface of the semiconductor wafer, there is a problem that contamination by organic substances is likely to occur, the adhesion of the underfill is deteriorated, and the yield is not improved when packaging.

On the other hand, if a semiconductor device connected in a flip chip is used as it is when packaging, the electrode of the connection part is exposed to the air, and the difference in the thermal expansion coefficient between the semiconductor chip and the substrate is large, so solder reflow, etc. Due to the thermal history of the subsequent process, a large stress was applied to the bump connection portion, and there was a problem in mounting reliability.
In order to solve these problems, after the bump and the substrate are connected, the gap between the semiconductor element and the substrate is filled with a resin (underfill or NCP) and cured in order to improve the reliability of the bonded portion. A method of fixing the element and the substrate is employed.

However, in general, a semiconductor element that performs flip-chip mounting has a large number of electrodes, and electrodes are arranged around the semiconductor element due to problems in circuit design. For this reason, when filling the resin paste as an underfill, if the liquid resin is poured from between the electrodes of these semiconductor elements by capillary action, the resin does not spread sufficiently, and unfilled portions are easily formed, and the operation of the semiconductor elements is impaired. There were problems such as poor operation and low moisture resistance reliability. Further, when the chip size is reduced, the substrate is contaminated by the overflow of the liquid resin, and when the pitch between the electrodes is reduced, it is difficult to pour the resin. In addition, since it takes too much time to fill each semiconductor element flip-chip connected with resin, there is also a problem in productivity.
On the other hand, the method of separating wafer chips after performing thermocompression bonding of a film-like adhesive (NCF) at a time is advantageous in that the process is simplified compared to resin paste filling. However, as the thickness of the semiconductor wafer becomes thinner, the semiconductor wafer is more likely to be damaged during thermocompression bonding. Therefore, the back surface of the semiconductor wafer may be ground after the film-like adhesive (NCF) is thermocompression bonded to the thick semiconductor wafer. It is necessary. This increases the number of processes and is not efficient.

  On the other hand, in the combination of a conventional adhesive tape for back surface grinding (tape having an adhesive layer on a base film) and an adhesive film (adhesive layer), an adhesive layer and an adhesive layer (adhesive tape and adhesive film) Has high affinity, and the peeling force for peeling the adhesive tape (adhesive layer) from the semiconductor wafer after grinding the backside of the semiconductor wafer is likely to increase, and the semiconductor wafer is easily damaged during the peeling process. ing. Moreover, in order to improve the embedding property of the adhesive film to the concavo-convex substrate and improve the adhesion reliability, it is necessary to lower the melt viscosity at the time of heat bonding. There is a tendency for the peeling force to increase, and there is a problem that it is difficult to peel off the adhesive tape after heat bonding.

  Also, if polyolefin or polyethylene terephthalate is used as the material for the base film of the adhesive tape for backside grinding, the elongation at break is small, so the kerf width becomes narrow during expansion, and the sensor cannot recognize the element and a pickup error occurs. There is also a problem.

  Although studies on these problems (see Patent Documents 8 and 9) have also been made, defects such as cracks are likely to occur in the conventional semiconductor chip manufacturing method as the semiconductor wafer becomes thinner and larger in diameter in recent years. In the worst case, cracking of the semiconductor wafer occurs, resulting in a problem of poor yield. In particular, when a semiconductor wafer is ground to a thickness of 100 μm or less, there is a case where the yield is severely deteriorated and cannot be stably manufactured. Further, the chip strength by normal back grinding and dicing is difficult to increase the bending strength, and many defects occurred during packaging.

JP 2008-251934 A JP 2009-27054 A JP 2004-331743 A JP 2000-150432 A JP 2007-227575 A Japanese Patent Laid-Open No. 10-8001 JP 2004-235395 A JP 2006-49482 A JP 2002-118147 A

  The present invention performs back grinding of a semiconductor wafer having a bump electrode used in a flip chip mounting process, and at the same time or a subsequent process, into a chip (individualization), in a semiconductor chip manufacturing process, To provide a method for producing a semiconductor chip using an adhesive film-integrated surface protective tape and an adhesive film-integrated surface protective tape capable of easily and accurately manufacturing a semiconductor chip without using an NCP Let it be an issue.

  As a result of various studies for the purpose of overcoming the problems in the flip-chip mounting process, the present inventors have made a bumped wafer circuit board having a height of 100 μm or less into a thin film having a thickness of 200 μm or less, particularly 50 μm or less in height. In the process of grinding a wafer circuit board with bumps into a thin film with a thickness of 100 μm or less and making it into a chip, the adhesive film and the adhesive film integrated surface protection with an adhesive tape made of acrylic resin as the base film Flip chip by attaching a tape to a semiconductor wafer, grinding the back surface of the wafer, and bonding or picking up only the adhesive film to the chip when picking up or picking up the transfer tape It can be mounted and found that the mounting reliability can be improved and the process can be shortened compared to the conventional process. The present invention has been accomplished based on this finding.

That is, according to the present invention, the following means are provided.
(1) An adhesive film-integrated surface protective tape having a pressure-sensitive adhesive layer on a base film, and an adhesive film laminated on the pressure-sensitive adhesive layer,
The adhesive film-integrated surface protective tape, wherein the base film has at least one layer made of a (meth) acrylic copolymer.
(2) The pressure-sensitive adhesive layer is an ultraviolet curable pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer comprises a (meth) acrylic copolymer having a photopolymerizable carbon-carbon double bond in a side chain, The photopolymerizable carbon-carbon double bond content of the (meth) acrylic copolymer is 0.5 to 1.2 meq / g, and the adhesive film-integrated type according to (1) Surface protection tape.
(3) The (meth) acrylic copolymer having a photopolymerizable carbon-carbon double bond in the side chain reacts with the functional group and the (meth) acrylic copolymer having a functional group in the side chain. The adhesive film-integrated surface protective tape according to (2), which is obtained by reacting a functional group that reacts with a compound containing a photopolymerizable carbon-carbon double bond.
(4) The adhesive film-integrated surface protective tape according to any one of (1) to (3), wherein the pressure-sensitive adhesive layer contains an ultraviolet curable release agent.
(5) The adhesiveness according to any one of (1) to (4), wherein the expansion / contraction rate of the adhesive film-integrated surface protective tape after ultraviolet irradiation is 120 to 200%. Film integrated surface protection tape.
(6) After forming a modified layer in a wafer with bumps having bumps as electrodes on a semiconductor wafer on which a semiconductor circuit is formed, the back surface of the semiconductor wafer is ground and divided into individual semiconductor chips. A method for manufacturing a semiconductor chip, comprising:
After forming the modified layer and before grinding the back surface of the semiconductor wafer, the adhesive film-integrated surface protective tape according to any one of (1) to (5), A step of adhering on the side of the semiconductor wafer on which the semiconductor circuit is formed on the adhesive film side; and
When the semiconductor chip is picked up after the backside grinding of the semiconductor wafer, or when the semiconductor wafer with the adhesive film integrated surface protection tape is transferred to the pickup tape, only the adhesive film is transferred to the semiconductor chip. A method for manufacturing a semiconductor chip, comprising a step of bonding the semiconductor chip.

  In the present invention, the “pressure-sensitive adhesive” means an agent that enables peeling by being subjected to a treatment such as curing after sticking, whereas the “adhesive” is an agent that enables bonding exclusively. For example, the “radiation curable pressure-sensitive adhesive” means a pressure-sensitive adhesive that is cured by being irradiated with radiation such as ultraviolet rays after application to a semiconductor wafer or the like and can be peeled off.

In the present invention, “thin film grinding” means grinding a semiconductor wafer into a thin film having a thickness of more than 0 μm and not more than 100 μm.
“(Meth) acryl” includes both “acryl” and “methacryl”, and may be either one of these or a mixture of both. For example, (meth) acrylic acid ester means that acrylic acid ester and methacrylic acid ester are included, and a mixture of acrylic acid ester and methacrylic acid ester may be used.
Unless otherwise specified, the numerical value range represented by “to” includes the numerical values before and after the upper limit value and the lower limit value.

The adhesive film-integrated surface protective tape of the present invention grinds the back surface of a semiconductor wafer having a bump electrode used in a flip-chip mounting process, and at the same time or after that, chips are formed (individualized). Excellent pick-up and expandability in semiconductor chip manufacturing process.
Therefore, by using this adhesive film-integrated surface protective tape, it is possible to provide a highly accurate and simple method for manufacturing a semiconductor chip without using underfill or NCP.

It is a schematic diagram of the first half of the process of the preferable one aspect | mode of the manufacturing method of the semiconductor chip of this invention. It is a schematic diagram which shows an example in the case of transcribe | transferring to a pick-up tape among the processes of the latter half of the process of the said preferable one aspect | mode of the manufacturing method of the semiconductor chip of this invention. It is a schematic diagram which shows an example at the time of not transferring among the processes of the latter half of the process of the said preferable one aspect | mode of the manufacturing method of the semiconductor chip of this invention.

<< Adhesive film integrated surface protection tape >>
The adhesive film-integrated surface protective tape of the present invention (hereinafter also simply referred to as “surface protective tape”) has a pressure-sensitive adhesive layer on a base film, and the adhesive film (adhesion) on the pressure-sensitive adhesive layer. Adhesive layer integrated surface protection tape on which the adhesive layer is laminated, and is composed of an adhesive tape for protecting the semiconductor wafer surface (its circuit) and an adhesive film for bonding the semiconductor chip Is done.

<Base film>
The base film in the present invention has at least one layer made of a (meth) acrylic copolymer. When a tape whose base film is made of an ethylene-vinyl acetate copolymer is used in thin film grinding, there is a problem that warping after grinding is deteriorated due to release of residual stress during film formation. Further, when polyethylene terephthalate (PET) is used as the base film, the melting point is high, so heat sealing cannot be performed at the time of peeling, which is inconvenient in dealing with an automated process.

The (meth) acrylic polymer is not particularly limited, and an energy beam curable resin, a curing agent curable resin, a thermosetting resin, or the like is used, preferably an energy beam curable resin or a curing agent curable resin. Is used. For example, when an energy beam curable resin is used, it is a (meth) acrylic composition mainly composed of a (meth) acrylic polymer and an energy beam polymerizable compound. Specific examples of these (meth) acrylic polymers and energy beam polymerizable compounds are those described below.
Moreover, the laminated | multilayer film which laminated | stacked the film of a single layer film or two or more layers can be used for a base film.
The base film is preferably visible light transmissive, and more preferably radiation transmissive.

The (meth) acrylic composition for producing the base film is preferably composed of a (meth) acrylic copolymer and a curing agent as components. Specifically, a composition such as a pressure-sensitive adhesive for the pressure-sensitive adhesive layer, which will be described later, is preferable, and is hereinafter also referred to as a (meth) acrylic pressure-sensitive adhesive.
The (meth) acrylic copolymer is, for example, a polymer having (meth) acrylic acid ester as a polymer constituent unit, a copolymer of (meth) acrylic acid ester and a functional monomer, and these polymers. And the like. As the molecular weight of these polymers, those having a low molecular weight having a mass average molecular weight of about 10,000 to 200,000 are suitable from the viewpoint of the elongation rate of the base film.

Moreover, a hardening | curing agent is used in order to make it react with the functional group which a (meth) acrylic-type copolymer has, and to adjust adhesive force and cohesion force. For example, 1,3-bis (N, N-diglycidylaminomethyl) cyclohexane, 1,3-bis (N, N-diglycidylaminomethyl) toluene, 1,3-bis (N, N-diglycidylaminomethyl) ) Epoxy compounds having two or more epoxy groups in the molecule such as benzene, N, N, N ′, N′-tetraglycidyl-m-xylenediamine, 2,4-tolylene diisocyanate, 2,6-tolylene Isocyanate systems having two or more isocyanate groups in the molecule such as isocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′-diisocyanate, trimethylolpropane adduct of tolylene diisocyanate A compound, tetramethylol-tri-β-aziridinylpropionate, 2 in a molecule such as limethylol-tri-β-aziridinylpropionate, trimethylolpropane-tri-β-aziridinylpropionate, trimethylolpropane-tri-β- (2-methylaziridine) propionate Aziridine compounds having the above-mentioned aziridinyl group are exemplified.
What is necessary is just to adjust the addition amount of a hardening | curing agent according to desired adhesive force, and 0.1-5.0 mass parts is suitable with respect to 100 mass parts of (meth) acrylic-type copolymers.

  In the case of using a curing agent curable resin, it cures to functional groups that react with the curing agent in the (meth) acrylic copolymer in order to suppress tack force and ensure strength and elongation as a film. It is desirable to add an equivalent amount of the agent, for example, 2.0 to 30 parts by mass is appropriate for 100 parts by mass of the (meth) acrylic copolymer.

In general, the energy beam curable resin mainly comprises the (meth) acrylic pressure-sensitive adhesive and the energy beam polymerizable compound.
As the energy beam polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by irradiation with ultraviolet rays is widely used. Specifically, trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6 hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like are widely applicable.

  In addition to the acrylate compounds as described above, urethane acrylate oligomers can also be used as the energy beam polymerizable compound. The urethane acrylate oligomer includes a polyol compound such as a polyester type or a polyether type and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1 , 4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc., and a terminal isocyanate urethane prepolymer obtained by reacting it with an acrylate or methacrylate having a hydroxy group (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.) Obtained by response.

As a blending ratio of the (meth) acrylic copolymer and the energy beam polymerizable compound in the energy beam curable resin, the energy beam polymerizable compound is 50 to 100 parts by mass with respect to 100 parts by mass of the (meth) acrylic copolymer. It is desirable to blend in the range of 200 parts by weight, preferably 50 to 150 parts by weight. In the case of this blending ratio range, the tack force of the energy beam curable resin is greatly reduced after the energy beam irradiation.
Further, the energy ray curable resin is prepared by replacing the acrylic pressure-sensitive adhesive itself with the energy ray-polymerizable acrylic ester copolymer, instead of blending the energy ray-polymerizable compound with the acrylic pressure-sensitive adhesive (composition) as described above. It is also possible to do.

  In the case of polymerizing an energy ray curable resin by energy rays, a photopolymerization initiator such as isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, benzyl methyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenylpropane or the like can be used in combination. By adding at least one of these to the energy ray curable resin, the polymerization reaction can be efficiently advanced. The energy beam referred to here refers to a light beam such as an ultraviolet ray or an ionizing energy beam such as an electron beam.

  The thickness of the base film is not particularly specified, but is preferably 10 to 200 μm from the viewpoint of manufacturability. In consideration of warping during grinding, 25 to 150 μm is more preferable. If the base film is too thin, the tape is not rigid enough to cause deflection, which leads to arm contact due to deflection when the cassette is stored. On the other hand, if the base film is too thick, warping may easily occur due to the release of residual stress during film formation.

Examples of the method for producing the base film include conventional production methods such as a casting method, a T-die method, an inflation method, and a calendar method. Among them, the casting method is preferable because the base resin is not subjected to shear stress, so that the orientation of polymer molecules does not occur, and the film can be uniformly stretched without being divided when the film is expanded.
When the base film is a laminated film in which two or more layers are laminated, it is preferable to have at least one film formed by a casting method. Other laminated films include a casting method and a T-die. The film may be formed by any of the conventional manufacturing methods such as the method, the inflation method, and the calendar method.

  In the laminated film, the ratio of the thickness of the film formed by a method other than the casting method (hereinafter referred to as other film) to the film formed by the casting method (hereinafter referred to as cast film) is: Although it does not specifically limit as long as the expandability of a film is satisfy | filled, What is 1: 1-1: 10 is preferable for cast film: other films, and what is 1: 2-1: 4 is more preferable.

<Adhesive layer>
(Base polymer)
As the base polymer of the pressure-sensitive adhesive used for the pressure-sensitive adhesive layer, a polymer known as the base polymer of the pressure-sensitive adhesive can be used. Examples include (meth) acrylic copolymers, rubber-based, silicone-based, and polyvinyl ether-based polymers. In the present invention, (meth) acrylic copolymers [(meth) acrylic pressure-sensitive adhesives] are preferable. .

Examples of the (meth) acrylic adhesive include those containing a (meth) acrylic polymer as a main component.
When the (meth) acrylic polymer is a main component, the (meth) acrylic copolymer component is at least 50% by mass or more, preferably 80% by mass or more (100% by mass or less).

The (meth) acrylic polymer is preferably cured by light or heat.
A (meth) acrylic polymer that is cured by light has a photopolymerizable carbon-carbon double bond (ethylenic double bond) in at least a side chain, and can be cured by irradiation. It may have a functional group such as a group.
On the other hand, a (meth) acrylic polymer that is cured by heat has a group that reacts thermally such as an epoxy group or an oxetane group in at least a side chain, and thus can be cured by heating.

The (meth) acrylic copolymer having a photopolymerizable carbon-carbon double bond in the side chain may be produced by any method. For example, the side chain has a functional group (α) (meta ) An acrylic polymer and a photopolymerizable carbon-carbon double bond such as a (meth) acryloyl group, and can react with a functional group (α) on the side chain of the (meth) acrylic polymer. What was obtained by making it react with the compound which has a functional group ((beta)) is preferable.
The group having a photopolymerizable carbon-carbon double bond may be any group as long as it has a non-aromatic ethylenic double bond, but a (meth) acryloyl group, a (meth) acryloyloxy group, (Meth) acryloylamino group, allyl group, 1-propenyl group and vinyl group (including styrene or substituted styrene) are preferable, and (meth) acryloyl group and (meth) acryloyloxy group are more preferable.
Examples of the functional groups (α) and (β) include a carboxy group, a hydroxyl group, an amino group, a mercapto group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group (—N═C═O).

  Here, when one functional group of the functional group (α) and the functional group (β) is a carboxy group, a hydroxyl group, an amino group, a mercapto group, or a cyclic acid anhydride group, the other functional group is , An epoxy group, and an isocyanate group. When one functional group is a cyclic acid anhydride group, examples of the other functional group include a carboxy group, a hydroxyl group, an amino group, and a mercapto group. In addition, when one functional group is an epoxy group, the other functional group may be an epoxy group. When one functional group is a carboxy group, the other functional group is a hydroxyl group or an amino group. Or a mercapto group.

As the functional group (α), a carboxy group and a hydroxyl group are preferable, and a carboxy group is particularly preferable.
The (meth) acrylic polymer having a functional group (α) in the side chain is a (meth) acrylic monomer having a functional group (α), preferably a (meth) acrylic ester [(particularly, a functional group in the alcohol part). It can be obtained by using (having (α)) as a monomer component.
The (meth) acrylic polymer having a functional group (α) in the side chain is preferably a copolymer, and this copolymerization component is a (meth) acrylic acid alkyl ester, in particular, a functional group ( α) and (meth) acrylic acid alkyl esters in which the group having a photopolymerizable carbon-carbon double bond is not substituted are preferred.

Examples of (meth) acrylic acid esters include methyl acrylate, ethyl acrylate, n-propyl acrylate, n-butyl acrylate, isobutyl acrylate, n-pentyl acrylate, n-hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2 -Ethylhexyl acrylate, dodecyl acrylate, decyl acrylate hexyl acrylate, and the corresponding methacrylates.
Although the (meth) acrylic acid ester may be one type or two or more types, it is preferable to use those having an alcohol part having 5 or less carbon atoms and those having 6 to 12 carbon atoms.

  In addition, since a glass transition point (Tg) becomes so low that the monomer with large carbon number of an alcohol part is used, the thing of a desired glass transition point can be produced. In addition to the glass transition point, it is also preferable to use a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene, acrylonitrile or the like as a copolymer component for the purpose of improving compatibility and various performances. The content of the monomer component is preferably in the range of 5% by mass or less.

  Examples of (meth) acrylic monomers having a functional group (α) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycols Monoacrylates, glycol monomethacrylates, N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, Some of the isocyanate groups of itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, and polyisocyanate compounds Alkoxy group and a photopolymerizable carbon - like those urethanization a monomer having a carbon-carbon double bond.

  Among these, acrylic acid, methacrylic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycidyl acrylate, glycidyl methacrylate are preferable, and acrylic acid, methacrylic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylate Are more preferable, and acrylic acid and methacrylic acid are more preferable.

The functional group (β) in the compound having a photopolymerizable carbon-carbon double bond and a functional group (β) is preferably a hydroxyl group or an isocyanate group.
The compound having a hydroxyl group is preferably a compound having a hydroxyl group in the alcohol part of an ester [preferably (meth) acrylic acid ester], more preferably a hydroxyalkyl (meth) acrylate, such as 2-hydroxyethyl (meth) acrylate, 2 -Hydroxypropyl (meth) acrylate, 3-hydroxy (meth) acrylate, 4-hydroxybutyl (meth) acrylate are mentioned.

Examples of the compound having an isocyanate group include (meth) acrylic acid ester having an isocyanate (—N═C═O) group in the alcohol part of the ester [preferably (meth) acrylic acid ester], and in particular, isocyanate (—N = (C = O)) (meth) acrylic acid alkyl esters substituted with groups are preferred. Examples of such compounds include 2-isocyanatoethyl methacrylate and 2-isocyanatoethyl acrylate.
Moreover, the compound illustrated with the (meth) acrylic-type monomer which has a functional group ((alpha)) as a preferable compound in case a functional group ((beta)) is other than an isocyanate group is mentioned.

  The compound having a photopolymerizable carbon-carbon double bond and a functional group (β) is a side chain functional group (α) in a (meth) acrylic polymer having a functional group (α) in the side chain, preferably a hydroxyl group. By reacting with, a polymerizable group can be incorporated into the copolymer, and the adhesive strength after radiation irradiation can be reduced.

  In the synthesis of the (meth) acrylic copolymer, as the organic solvent when the reaction is carried out by solution polymerization, ketone, ester, alcohol, and aromatic solvents can be used, among which toluene, Generally a good solvent of a (meth) acrylic polymer, such as ethyl acetate, isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, and a solvent having a boiling point of 60 to 120 ° C. is preferable. As the polymerization initiator, radical generators such as azobis compounds such as α, α'-azobisisobutyronitrile and organic peroxide compounds such as benzoyl peroxide are usually used. At this time, if necessary, a catalyst and a polymerization inhibitor can be used in combination, and a (meth) acrylic copolymer having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. In terms of adjusting the molecular weight, it is preferable to use a solvent such as mercaptan or carbon tetrachloride. This reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.

As described above, a (meth) acrylic copolymer can be obtained. In the present invention, the molecular weight of the (meth) acrylic copolymer is preferably about 300,000 to 1,000,000. If the molecular weight is too small, the cohesive force after irradiation is reduced, and pick-up failure or transfer failure is likely to occur during pick-up or transfer to a pick-up tape. On the other hand, if the molecular weight is too large, the adhesive film may be peeled off or displaced from the adhesive tape.
In addition, the molecular weight in this invention means the mass mean molecular weight of polystyrene conversion by a conventional method.

  In the present invention, the introduction amount or content of the photopolymerizable carbon-carbon double bond of the (meth) acrylic copolymer is preferably 0.5 to 1.2 meq / g. If the introduction amount or content of the photopolymerizable carbon-carbon double bond in the (meth) acrylic copolymer is within the above range, the initial adhesive strength of the adhesive is large, and the adhesive strength is large after irradiation. The adhesive layer is reduced and peeling from the adhesive layer is facilitated, and the pressure-sensitive adhesive does not remain on the surface of the adhesive layer.

(Crosslinking agent)
In order to add cohesive force to the base polymer of the pressure-sensitive adhesive, a crosslinking agent can be blended. Examples of the crosslinking agent include an isocyanate-based crosslinking agent, an epoxy-based crosslinking agent, a metal chelate-based crosslinking agent, an aziridine-based crosslinking agent, and an amine resin corresponding to the base polymer. Further, the pressure-sensitive adhesive can contain various additive components as desired within the range in which the object of the present invention is not impaired.

As the adhesive, an energy ray curable adhesive or a heat foaming adhesive can be used. As the energy ray-curable pressure-sensitive adhesive, a pressure-sensitive adhesive that is cured by ultraviolet rays, an electron beam, or the like and easily peels at the time of peeling can be used. Moreover, as a heat-foaming-type adhesive, the adhesive which becomes easy to peel by heating by having a foaming agent and an expansion agent can be used. As the radiation curable pressure-sensitive adhesive, for example, those described in JP-B-1-56112, JP-A-7-135189 and the like are preferably used, but are not limited thereto.
In the present invention, it is preferable to use an energy ray-curable pressure-sensitive adhesive. In this case, it only needs to have a property of being cured by forming a three-dimensional network by irradiation with energy rays. For example, at least in a molecule relative to a normal rubber-based or (meth) acrylic pressure-sensitive base resin (polymer). A low molecular weight compound (hereinafter referred to as a photopolymerizable compound) having two photopolymerizable carbon-carbon double bonds (ethylenic double bonds) and a photopolymerization initiator are used. .

  The above rubber-based or (meth) acrylic base resins are rubber polymers such as natural rubber and various synthetic rubbers, or poly (meth) acrylic acid alkyl esters, (meth) acrylic acid alkyl esters and copolymers thereof. (Meth) acrylic polymers such as copolymers with possible other unsaturated monomers are used.

  Moreover, an initial stage adhesive force can be set to arbitrary values by mixing an isocyanate type hardening | curing agent in said adhesive. Specific examples of such curing agents include polyvalent isocyanate compounds such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, and diphenylmethane. -4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, Trimethylolpropane adducts of lysine isocyanate and tolylene diisocyanate are used.

  As a compounding quantity of a (meth) acrylic-type base polymer and a hardening | curing agent, 0.5 mass part-3.0 mass parts are preferable with respect to 100 mass parts of (meth) acrylic-type base polymers. When the blending amount of the curing agent is too small, the curing reaction of the (meth) acrylic adhesive is not sufficiently promoted, resulting in high adhesive strength, and the separated semiconductor chip is difficult to peel off from the tape, resulting in pickup failure. Moreover, when there are too many compounding quantities of a hardening | curing agent, it will harden | cure while an adhesive bites into a bump at the time of ultraviolet irradiation, and it may become difficult to peel or it may bump.

  In the case of an energy ray curable pressure-sensitive adhesive, the polymerization curing time and the amount of ultraviolet irradiation by ultraviolet irradiation can be reduced by blending a photopolymerization initiator in the pressure-sensitive adhesive. Specific examples of such a photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, Examples include β-chloranthraquinone and α-hydroxycyclohexyl phenyl ketone.

  As a compounding quantity of a photoinitiator, 0.1-10 mass parts is preferable with respect to 100 mass parts of base polymers. When the amount of the photopolymerization initiator is too small, the polymerization reaction does not proceed sufficiently, resulting in poor curing, and the peelability between the pressure-sensitive adhesive and the adhesive deteriorates. Moreover, when there are too many photoinitiators, a low molecular-weight component will increase in an adhesive, and it will have a bad influence on pollution property.

(Release agent)
In the present invention, a (meth) acrylic pressure-sensitive adhesive can contain a release agent as necessary. The release agent used in the present invention is not particularly limited. For example, a curable silicone resin, a polymer having a long alkyl side chain, and the like can be used, and a fluorine release agent and a wax release agent (for example, paraffin). Wax type or carnauba wax type) can also be used.

The curable silicone resin includes, for example, a thermosetting type (condensation reaction type or addition reaction type), ultraviolet ray or electron beam curable type, and any reactive type can be used. An electron beam curable release agent is preferable, and an ultraviolet curable release agent is particularly preferable.
These curable silicone resins may be used alone or in combination of two or more.
The curable silicone resin has a degree of polymerization of about 500 to 200,000, preferably about 1,000 to 100,000.

  Examples of the addition reaction type silicone resin include those in which a coating film is formed by reacting a polydimethylsiloxane having a vinyl group introduced at the terminal with hydrogen silane using a platinum catalyst to form a three-dimensional crosslinked structure. . The condensation-reaction type silicone resin is a silanol group (Si—OH group) in a base silicone polymer (for example, polydimethylsiloxane having a terminal —OH group) in the presence of an organic tin catalyst (for example, an organic tin acylate catalyst). And a crosslinking agent (for example, polydimethylsiloxane having a terminal -H group (hydrogensilane)) by dehydrogenative condensation to form a siloxane bond (Si-O-Si) Examples include those that are crosslinked to form a three-dimensional crosslinked structure.

  For example, the most basic type of ultraviolet or electron beam curable silicone resin is a radical addition type in which a photopolymerization initiator is added to a siloxane containing an alkenyl group and a mercapto group, and a (meth) acryl group is added. Radical polymerization type in which photopolymerization initiator is added to the contained siloxane and cured by radical polymerization, addition reaction type in which vinylsiloxane is hydrosilylated by the presence of a platinum-based catalyst, onium salt photoinitiator is decomposed with ultraviolet rays, Examples thereof include a cationic polymerization type in which an epoxy group is cleaved by generating a Sted acid to crosslink. Among these, the cationic polymerization type silicone resin is particularly preferably used because it has an epoxy group as a functional group and is excellent in adhesion to a corona-treated film. Further, in the case of an electron beam curable silicone resin, the electron beam has a stronger energy than ultraviolet rays, so that a crosslinking reaction by radicals occurs without using an initiator as in the ultraviolet curable type.

  The thermosetting silicone resins are silicone KS-718, KS-708A, KS-774, KS-830, KS-775, KS-778, KS-779H, KS-847H, KS- manufactured by Shin-Etsu Chemical Co., Ltd. 847, KS-776, X-62-2422, X-62-2461, KS-3600, KS-856 (all trade names), Dow Corning Asia Co., Ltd. Silicone DKQ3-202, DKQ3-203 DKQ3-204, DKQ3-205, DKQ3-210 (all trade names), Silicone SRX-357, SRX-211, SREX211, SP7243S (all trade names) manufactured by Toray Dow Corning Silicone Co., Ltd., Toshiba Silicone ( Co., Ltd. Silicone TPR-6700, TPR-6701, TPR-6721, TP -6720 (all trade names), and the like.

  The ultraviolet curable silicone resin is manufactured by Toshiba Silicones Co., Ltd. Silicone TPR6500, TPR6501, UV9300, UV9315, UV9425, XS56-A1652, XS56-A2775, XS56-A2982, UV9430 (all trade names), Toray Dow Corning Silicone ( Co., Ltd. Silicone BY24-535, BY24-542, BY24-551A / B, BY24-538 (all trade names), Shin-Etsu Chemical Co., Ltd. silicone X-62-7296, X-62-7305, KS-5504, KS-5505, KS-5514, X-62-5039, X-62-5040, KNS-5100, X-62-7028, KNS-5300, X-62-7540, X-62-7192 ( All are trade names) .

  In addition, silicone resins described in JP-A-47-34447 and JP-B-52-40918 can also be used.

For applications that dislike the release agent of curable silicone resin, for example, when used as a supporting film for casting to form a water-based adhesive or resin solution that is easy to repel, or for applications where silicone component migration is not allowed, Polymers with long alkyl side chains can be used as release agents.
As the polymer having a long alkyl side chain, a copolymer of an alkyl acrylate having 12 or more carbon atoms, particularly an alkyl chain having 16 to 20 carbon atoms, and acrylic acid is preferable. If the alkyl chain of the alkyl acrylate has less than 12 carbon atoms, sufficient peelability may not be obtained. In particular, a copolymer obtained by long-chain alkylation of polyvinyl alcohol or polyethyleneimine with chlorinated alkyloyl or alkyl isocyanate is preferable, specifically, polyvinyl-N-octadecyl carbamate obtained by reaction of polyvinyl alcohol and octadecyl isocyanate, And polyethyleneimine-N-octadecylcarbamate obtained by the reaction of polyethyleneimine and octadecyl isocyanate.

  In this invention, 0.1-1.0 mass part is preferable with respect to 100 mass parts of base polymers, and, as for the compounding quantity of a base polymer and a mold release agent, More preferably, it is 0.3-0.5 mass part. If the compounding quantity of a base polymer and a mold release agent is in the said range, suitable adhesiveness will be obtained between an adhesive layer and an adhesive bond layer, and peelability will also improve.

  The thickness of the pressure-sensitive adhesive layer is not particularly limited, but is preferably 2 to 100 μm, and more preferably 5 to 50 μm.

<Adhesive layer>
The adhesive layer of the present invention is a film obtained by previously forming an adhesive, and is also referred to as an adhesive film in this document. For example, any polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, phenoxy resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide resin, polyether ketone used for adhesives Resins, chlorinated polypropylene resins, (meth) acrylic resins, polyurethane resins, epoxy resins, poly (meth) acrylamide resins, melamine resins, and the like and mixtures thereof can be used.
As the main component of the adhesive, a (meth) acrylic resin [(meth) acrylic copolymer] or a phenoxy resin is particularly preferable. Polyimide resin is very good in terms of mounting reliability, but because of its high glass transition temperature, it is often unable to obtain sufficient fluidity during bonding, and is not suitable for following bumps and other irregularities. , Air entrainment is likely to occur during bonding. On the other hand, the (meth) acrylic copolymer and the phenoxy resin can ensure the fluidity at the time of bonding and ensure the reliability at the time of mounting.

The polymerization method of the (meth) acrylic copolymer is not particularly limited, and examples thereof include pearl polymerization, solution polymerization, suspension polymerization, and the like, and the copolymer can be obtained by these methods. Suspension polymerization is preferred because of its excellent heat resistance. Examples of such a (meth) acrylic copolymer include Paracron W-197C (trade name, manufactured by Negami Kogyo Co., Ltd.).
The (meth) acrylic copolymer preferably contains acrylonitrile. The content of acrylonitrile is preferably 10 to 50 mol%, more preferably 20 to 40 mol% with respect to the (meth) acrylic copolymer. By making acrylonitrile 10 mol% or more, Tg of an adhesive bond layer can be raised and adhesiveness can be improved. On the other hand, when the amount of acrylonitrile is too large, the fluidity of the adhesive layer is deteriorated and the adhesiveness may be lowered. The (meth) acrylic copolymer containing acrylonitrile as a component is preferably synthesized by suspension polymerization.

  The (meth) acrylic copolymer may have a functional group in order to improve adhesiveness. Although it does not specifically limit as a functional group, For example, an amino group, a urethane group, an imide group, a hydroxyl group, a carboxy group, a glycidyl group etc. are mentioned, Especially, a glycidyl group is preferable. The glycidyl group has good reactivity with the epoxy resin, which is a thermosetting resin, and hardly reacts with the pressure-sensitive adhesive layer as compared with a hydroxyl group or the like, so that the change in surface free energy hardly occurs. Examples of the (meth) acrylic copolymer having a glycidyl group include a glycidyl ether (meth) acrylic copolymer, a glycidylamine (meth) acrylic copolymer, and a glycidyl ester (meth) acrylic copolymer. These are preferably contained at least one, and more preferably two or more.

Examples of the phenoxy resin include a resin obtained by reacting a bifunctional phenol and epihalohydrin to a high molecular weight or by polyaddition of a bifunctional epoxy resin and a bifunctional phenol. More specifically, the phenoxy resin can be obtained by reacting, for example, a bifunctional phenol and epihalohydrin in a non-reactive solvent at a temperature of 40 to 120 ° C. in the presence of a catalyst such as an alkali metal hydroxide. it can. Also, phenoxy resins are bifunctional epoxy resins and bifunctional phenols in the presence of catalysts such as alkali metal compounds, organophosphorus compounds, cyclic amine compounds, amides, ethers, and ketones having a boiling point of 120 ° C or higher. It can be obtained by heating to 50 to 200 ° C. and subjecting it to a polyaddition reaction in an organic solvent such as a lactone type or an alcohol type under the condition that the reaction solid content is 50 parts by mass or less. A phenoxy resin may be used independently and may be used in combination of 2 or more type.
The bifunctional epoxy resin is preferably an epoxy resin described below. Further, the bifunctional phenols are preferably phenols which are the basic skeleton of the bifunctional epoxy resin.
The phenoxy resin is preferably 10 to 50% by mass of the entire resin in the adhesive layer.

In this invention, it is preferable to contain an epoxy resin in the component of an adhesive bond layer. As such a preferable epoxy resin, a glycidyl group or a group having a partial structure in which an epoxy ring is condensed to an alicyclic ring is preferable. In particular, glycidyl ether epoxy resin, glycidyl amine epoxy resin, glycidyl ester epoxy resin and alicyclic epoxy resin are more preferable.
Among these, a resin in which either a glycidyl group or a group having a partial structure in which an epoxy ring is condensed to an alicyclic ring is substituted with a hydroxyl group (phenolic hydroxyl group) of a bisphenol-based resin is preferable.
Examples of such bisphenol-based epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol AD type epoxy resins, and bisphenol S type epoxy resins.
Among these bisphenol-based epoxy resins, bisphenol F diglycidyl ether resin and bisphenol A diglycidyl ether resin are preferable.

In the present invention, it is particularly preferable to use a combination of two or more bisphenol-based epoxy resins having different structures, and it is most preferable to use a combination of bisphenol F diglycidyl ether resin and bisphenol A diglycidyl ether resin.
In addition to using in combination, it is also preferable to use two or more bisphenol-based epoxy resins having different structures after copolymerization.
By using two or more types of epoxy resins, particularly bisphenol-based epoxy resins having different structures, it is possible to achieve both fluidity for embedding bumps and other irregularities and curability for bonding reliability.

  The blending amount of the epoxy resin in the adhesive layer is preferably 15 to 35% by mass of the entire resin.

Moreover, in this invention, it is also preferable to contain the cured epoxy resin formed by previously mix | blending the said epoxy resin and a latent hardening agent in the component of an adhesive bond layer. Cured epoxy resin is obtained by reacting the above-mentioned epoxy resin with a curing agent for epoxy resin. As curing agent for epoxy resin, amines, polyamide resins, imidazoles, polymercaptan, acid anhydrides, latent Commonly used curing agents for epoxy resins, such as curable curing agents and light / ultraviolet curing agents.
Among these, latent curing agents such as boron trifluoride-amine complex, dicyandiamide, and organic acid hydrazide are preferable, and dicyandiamide is more preferable.
In the cured epoxy resin, the blending amount (mass) of the epoxy resin and the epoxy resin curing agent is not limited as long as the characteristics are satisfied, but the epoxy resin: epoxy resin curing agent is preferably 1: 1.

  The blending amount of the cured epoxy resin in the adhesive layer is preferably 35 to 70% by mass of the entire resin.

  The adhesive layer may contain an inorganic filler. If the added amount is large, the fluidity is lowered and the adhesiveness is lowered. Therefore, the content of the inorganic filler is preferably less than 60 parts by weight, more preferably 50 parts by weight or less, and still more preferably, with respect to 100 parts by weight of the resin component. 30 parts by mass or less. Although there is no restriction | limiting in particular in the minimum of content of an inorganic filler, it is practical that it is 5 mass parts or more. Moreover, since the unevenness | corrugation arises on the surface of an adhesion surface when a particle size is large and adhesiveness falls, the average particle diameter of an inorganic filler is preferably 1 μm or less, more preferably 0.7 μm or less, and further preferably 0.5 μm or less. It is. Although there is no restriction | limiting in particular in the minimum of the particle size of an inorganic filler, it is practical that it is 0.003 micrometer or more. The inorganic filler only needs to have insulating properties and thermal conductivity. For example, nitrogen compounds (boron nitride, aluminum nitride, silicon nitride, carbon nitride, titanium nitride, etc.), carbon compounds (silicon carbide, fluorine carbide, Boron carbide, titanium carbide, tungsten carbide, diamond, etc.), metal oxides (silica, alumina, magnesium oxide, zinc oxide, beryllium oxide, etc.) and the like.

  Although the thickness of an adhesive bond layer is not specifically limited, 2-80 micrometers is preferable and 5-70 micrometers is more preferable.

(Molecular weight)
In the present invention, the molecular weight means a mass average molecular weight, and is measured using a standard polystyrene calibration curve by gel permeation chromatography (GPC).

[Measurement conditions by GPC method]
Equipment used: High-performance liquid chromatography LC-20AD [manufactured by Shimadzu Corporation, trade name]
Column: Shodex Column GPC KF-805 [manufactured by Shimadzu Corporation, trade name]
Eluent: Chloroform Measurement temperature: 45 ° C
Flow rate: 3.0 ml / min RI detector: differential refractive index detector RID-10A [manufactured by Shimadzu Corporation, trade name]

(Elongation at break of adhesive tape integrated surface protection tape)
About the adhesive film-integrated surface protective tape after UV irradiation, in accordance with the tensile test method of JIS K 7127 (Plastic film and sheet tensile test method), a temperature of 23 ± 2 ° C., a humidity of 50 ± 5%, The test is performed at a distance of 50 mm between the marked lines and the distance between the grips and at a speed of 300 mm / min, and the elongation at break in the machining direction (MD) is measured.
In addition, the expansion / contraction rate of the adhesive film-integrated surface protective tape after ultraviolet irradiation in the present invention refers to the elongation at break of the adhesive film-integrated surface protective tape after ultraviolet irradiation.

(Expansion / contraction rate of adhesive tape integrated surface protection tape)
In the present invention, the stretch ratio of the adhesive film-integrated surface protective tape after irradiation with ultraviolet rays is preferably 120 to 200%, more preferably 130 to 180%, and even more preferably 140 to 160%. If the expansion / contraction ratio of the adhesive film-integrated surface protective tape after ultraviolet irradiation is in the above range, a sufficient gap between the stretched elements can be obtained, which makes it difficult to recognize each element during pickup. Can be suppressed. Further, there is no contact between adjacent semiconductor chips or misalignment of the semiconductor chips, and therefore no malfunction occurs when the semiconductor chips are picked up.

The ultraviolet irradiation is performed with an integrated light amount of 500 mJ / cm ² using an ultraviolet irradiation device (“UVC-408” manufactured by Technovision, wavelength: 365 nm, illuminance: 70 mW / cm ² (on the work surface)).

<< Semiconductor Chip Manufacturing Method >>
Below, the manufacturing method of the semiconductor chip using the adhesive film integrated surface protection tape of this invention is demonstrated.

  According to the semiconductor chip manufacturing method of the present invention, after a modified layer is formed in a bumped wafer having bumps as electrodes on a semiconductor wafer on which a semiconductor circuit is formed, the back surface of the semiconductor wafer is ground, A method of manufacturing a semiconductor chip, which is divided into chips at once, after forming the modified layer and before grinding the back surface of the semiconductor wafer, the adhesive layer on the base film An adhesive film-integrated surface protective tape (also referred to simply as a surface protective tape) in which an adhesive film is laminated on an adhesive layer of an adhesive tape having an adhesive tape is formed on the adhesive film side on the side where a semiconductor circuit of a semiconductor wafer is formed. At the time of picking up after the back surface grinding of the conductor wafer, or when being transferred to a tape for pick-up, only the adhesive film contacts the semiconductor chip. Process of the state having a.

In the present invention, it is preferable that the step of bringing only the adhesive film into the semiconductor chip is a step of directly picking up from the adhesive film without using a transfer film (pickup tape).
Moreover, it is preferable to include the process of dividing | segmenting the said adhesive film and a semiconductor chip simultaneously by expanding an adhesive film integrated surface protection tape.
Furthermore, it is preferable to divide only the adhesive film of the adhesive film-integrated surface protection tape by a laser after batch cutting of the semiconductor chips by backside grinding of the semiconductor wafer.

Hereinafter, a more preferable method for manufacturing a semiconductor chip of the present invention will be described with reference to the drawings. In each figure, the same code | symbol shows the same member.
There are two methods for manufacturing a semiconductor chip: a method through a process of transferring to a pickup tape and a method through a process of not transferring to the pickup tape.

FIG. 1 schematically shows the first half of the process of a preferred embodiment of the method for manufacturing a semiconductor chip of the present invention. The method undergoes a process of transferring to the above-mentioned pickup tape and the transfer to this pickup tape is not performed. It is the first half of the process that is common to any method that goes through the process.
FIG. 2 is an example of the latter half of the process performed after the process (4) in FIG. 1 in the method through the process of transferring to the pickup tape, and FIG. 3 is the method in the process through which the transfer to the pickup tape is not performed. This is an example of the latter half of the process performed after the process (4) in FIG.

[I] Process of Transfer to Pickup Tape Hereinafter, description will be made with reference to FIGS.
(1) First, the modified layer (2) is formed by the laser (7) from the surface (1A) [surface on which the semiconductor circuit is formed] side of the semiconductor wafer (1).
In order to divide the semiconductor wafer into semiconductor chips, the part to be divided of the semiconductor wafer is irradiated with laser light, and is modified by a multiphoton absorption [also called a crack region, which is actually modified in the modified layer (2). This is a step of forming a modified portion (2A)] indicated by a broken line in the semiconductor wafer.

Irradiation with laser light causes a phenomenon called optical damage due to multiphoton absorption, and this optical damage induces thermal strain inside the semiconductor wafer, which causes a modified region [modified portion ( 2A)] is formed. Examples of laser light (laser beam) used in this case include Nd: YAG laser, Nd: YVO laser, Nd: YLF laser, and titanium sapphire laser that generate pulsed laser light.
The thickness of the modified layer (2) is preferably 20 μm to 40 μm. In addition, the modified layer (2) is preferably provided, for example, 10 μm to 50 μm above the back surface (1B) of the back-ground semiconductor wafer. This is because when the modified portion (2A) is included in the semiconductor chip, the bending strength of the portion may be lowered.
Here, by providing the modified layer (2) above the back surface of the semiconductor wafer subjected to the back surface grinding, the semiconductor chip can be divided by an impact when the modified layer (2) is ground.

(2) The adhesive film-integrated surface protective tape (surface protective tape) of the present invention is bonded to the semiconductor wafer surface (1A).
At this time, the adhesive layer (adhesive film) (6) side of the adhesive film-integrated surface protective tape is attached to the side of the semiconductor wafer (1) where the modified layer (2) is formed. The surface protection tape of this invention has an adhesive layer (5) on a base film (4) as mentioned above, and has an adhesive layer (adhesive film) (6) on the adhesive layer. Among these, the tape which has an adhesive layer (5) on a base film (4) is also called adhesive tape (3).

(3) The surface (back surface) (1B) opposite to the surface on which the adhesive film-integrated surface protective tape of the semiconductor wafer is bonded is ground. In the figure, 8 is a grinder, and 9 is a semiconductor wafer during back grinding.

(4) The back surface grinding is finished in a state where the grinding can be performed to the target thickness. In the figure, reference numeral 10 denotes a semiconductor wafer whose back surface is ground.

(5-1) A pickup tape (11) is attached to the back surface (grind surface) of the semiconductor wafer and fixed to the ring frame (12).
The pickup tape (11) is preferably a dicing tape because good pickup properties and expandability are required in the pickup process.
As the pressure-sensitive adhesive for the pressure-sensitive adhesive layer of the dicing tape, a general pressure-sensitive adhesive used for a dicing tape can be used, and preferably a pressure-sensitive adhesive that is cured by irradiation with ultraviolet rays.
As the ring frame (12), one used in a general semiconductor wafer processing step can be used.

(6-1) Only the adhesive tape (3) [base film (4) and adhesive layer (5)] of the adhesive film-integrated surface protective tape is peeled off, and only the adhesive film (6) is the surface of the semiconductor wafer. To leave. In the figure, as an example of using an ultraviolet curable adhesive as an adhesive, a state in which the adhesive tape (3) is peeled off after ultraviolet irradiation (not shown) is shown.

(7-1) Expand the pickup tape.
There are two expansion methods: (7-1A) Dividing the adhesive film (adhesive layer) and the semiconductor wafer, or (7-1B) Dividing only the semiconductor wafer and then the adhesive film (adhesive layer) Is cut with a laser (14).
In order to make it like said (7-1A) and (7-1B), it can adjust by changing an expanding condition.
That is, when the adhesive film is divided in an expanded manner (7-1A), a certain amount of expansion is required, so that it can be divided simultaneously with the semiconductor chip by making the expanded amount larger than usual. On the other hand, in the case of an expand with only a semiconductor chip (7-1B), since the semiconductor chip is a rigid body, the amount of expansion may be small. Thus, it can be set as the state of (7-1A) or (7-1B) by adjusting the amount of expansion arbitrarily.
In the figure, 6A represents a divided adhesive layer (adhesive film), and 10A represents a divided semiconductor wafer. Reference numeral 11A denotes an expanded pickup tape, and reference numeral 13 denotes an expander.

(8-1) The divided semiconductor wafer (10A) becomes an individual semiconductor chip (17) with an individualized adhesive film (adhesive layer) (6A), which is converted into an adhesive film (adhesive layer) ( Pick up with 6A). In the figure, reference numeral 15 denotes a pickup needle, and 16 denotes a pickup collet. The semiconductor chip (17) is peeled off and picked up from the expanded pickup tape (11A).

[II] Process without Transfer to Pickup Tape Hereinafter, description will be made with reference to FIG. 1 and FIG. Note that (1) to (4) are the same as the process [I] for transferring to the pickup tape.
(1) First, the modified layer (2) is formed by the laser (7) from the surface (1A) side of the semiconductor wafer (1).
(2) The adhesive film-integrated surface protective tape (surface protective tape) of the present invention is bonded to the semiconductor wafer surface (1A). At this time, the adhesive layer (adhesive film) (6) side of the adhesive film-integrated surface protective tape is attached to the side of the semiconductor wafer (1) where the modified layer (2) is formed.
(3) The surface (back surface) (1B) opposite to the surface on which the adhesive film-integrated surface protective tape of the semiconductor wafer is bonded is ground.
(4) The back surface grinding is finished in the state (10) where the grinding can be performed to the target thickness.

(5-2) Affixing tape (21) is attached to the base film (4) surface side of the adhesive film-integrated surface protective tape, and fixed to the ring frame (22).
Here, the fixing tape (21) is substantially the same as the above-mentioned dicing tape [pickup tape (11)].

(6-2) Expand the fixing tape (21). At this time, both the adhesive film (adhesive layer) (6) and the semiconductor wafer (1) are divided on the adhesive tape (3).
The expanding speed is preferably 0.5 to 5 mm / second and the expanding amount is 5 to 20 mm.
In the figure, 6A represents a divided adhesive layer (adhesive film), and 10A represents a divided semiconductor wafer. 21A indicates an expanded fixing tape, and 23 indicates an expander.

(7-2) The divided semiconductor wafer (10A) becomes individual semiconductor chips (27) with an individualized adhesive film (adhesive layer) (6A), which is converted into an adhesive film (adhesive layer) ( Pick up with 6A). In the figure, 25 indicates a pickup needle, and 26 indicates a pickup collet. The semiconductor chip (27) is picked up after the adhesive film (adhesive layer) (6) is peeled from the adhesive tape (3). In the figure, as an example of using an ultraviolet curable adhesive as an adhesive, the semiconductor chip (27) is peeled from the adhesive layer (5) after ultraviolet irradiation (not shown).

The method for manufacturing a semiconductor chip using the adhesive film-integrated surface protective tape of the present invention exhibits a remarkable effect when thin-film grinding a semiconductor wafer having bumps and other irregularities as electrodes.
Thus, the semiconductor chip manufacturing method using the adhesive film-integrated surface protective tape of the present invention grinds a bumped wafer circuit substrate with bumps of 100 μm or less into a thin film of 200 μm or less, In particular, it is effective for grinding a bumped wafer circuit board with bumps having a height of 50 μm or less to a thin film having a thickness of more than 0 μm and not more than 100 μm.
Note that the lower limit of the height of the bump is practically 5 μm or more.

  By manufacturing the semiconductor chip by the manufacturing method of the present invention, it is possible to omit the dicing process after the back surface grinding. Further, by using the adhesive film-integrated surface protective tape of the present invention, it is possible to omit the step of pouring underfill, and therefore, resin leakage due to underfill does not occur and the yield is improved.

On the other hand, the bending strength of a semiconductor chip is an important performance in thinning a semiconductor chip. In the conventional method of dicing after back grinding, which is a conventional general method, both the blade dicing and the laser dicing are used to damage the semiconductor wafer that has been thinned by the back grinding of the semiconductor wafer. For this reason, damage is likely to remain in the obtained semiconductor chip, chipping occurs, or the semiconductor chip is broken in the worst case.
However, in the manufacturing method of the present invention, damage to the semiconductor chip can be minimized, the bending strength of the semiconductor chip can be increased, and chip cracking is unlikely to occur. It can be secured.

  Moreover, in the conventional manufacturing method, when a semiconductor chip is mounted on a substrate, since a thin film semiconductor chip with bumps and other irregularities is pressed on the chip, chip cracking is very likely to occur. However, in the manufacturing method of the present invention, since the semiconductor chip is mounted in a state where the adhesive film (adhesive layer) is adhered to the semiconductor chip, occurrence of chip cracking can be suppressed. In addition, since it can be bonded with an adhesive film (adhesive) at the same time as mounting, the manufacturing time can be shortened.

  In the present invention, the semiconductor device may be transferred to a pickup tape after being formed into a chip, and the semiconductor device may be manufactured in a separate process only for the pickup (the process shown in FIGS. 1 and 2). Step 3) is preferred. By picking up without transferring, the peeling process of the adhesive tape can be omitted, and since it is released from the stress applied at the time of peeling, damage to the semiconductor chip can be reduced.

  In the present invention, the semiconductor wafer after thin film grinding may be divided into chips by pressing a roll (not shown), or divided into chips by pushing a push blade from above the modified layer (see FIG. It is also possible to divide the chip by expanding (step (7-1A) in FIG. 2, step (6-2) in FIG. 3). Since no external stress is applied, a method of dividing by expanding is preferable.

  Hereinafter, in order to further clarify the effects according to the present embodiment, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.

  Adjust the pressure-sensitive adhesive and adhesive as follows, apply the pressure-sensitive adhesive on the release liner so that the dry film thickness is 20 μm, and the base film on the side where the pressure-sensitive adhesive is applied (pressure-sensitive adhesive layer side) And dried at 110 ° C. for 3 minutes to produce an adhesive tape having an adhesive layer on the base film. In these pressure-sensitive adhesive tapes, on the pressure-sensitive adhesive layer side from which the release liner has been peeled, the adhesive film coated with the adhesive on the release liner so that the thickness is 70 μm (the adhesive layer side) The adhesive layer-integrated surface protective tapes of Examples 1 to 4 and Comparative Examples 1 and 2 as shown in Table 1 having an adhesive layer on the adhesive layer were prepared. At this time, in Examples 1 to 4 and Comparative Examples 1 and 2, corona treatment was performed as a surface modification treatment of the base film in order to improve the adhesion between the base film and the adhesive. Various properties were evaluated with the adhesive film-integrated surface protective tapes of Examples 1 to 4 and Comparative Examples 1 and 2.

The materials used are shown below.
<Base film>
Base film 1A
Using an ethylene-methyl methacrylate copolymer resin (EMMA) (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRIFT WD201), a resin film Aa having a thickness of 100 μm was formed by a T-die method.
2-Ethylhexyl acrylate, methyl acrylate, and 2-hydroxyethyl acrylate were copolymerized to obtain an acrylate copolymer having a mass average molecular weight of 100,000 and a glass transition point of -10 ° C. For 100 parts by mass of the acrylic ester copolymer, 2 parts by mass of Coronate L (trade name, manufactured by Nippon Polyurethane) as a curing agent, 150 parts by mass of a urethane acrylate oligomer (mass average molecular weight: 1200), a photopolymerization initiator. As a resin film, a UV curable acrylic copolymer blended with 5 parts by mass of Irgacure 184 (trade name, manufactured by Ciba Geigy Japan) was coated on the release film so that the thickness after drying was 30 μm. A base film 1A having a total thickness of 130 μm, which is a laminated film of a resin film Aa and a cast film Ab, was obtained by bonding with Aa, irradiating with ultraviolet rays, and curing.

Base film 1B
A polyethylene terephthalate film (manufactured by Teijin DuPont, trade name: Tetron G2, thickness 100 μm) was used.

Base film 1C
Using an ethylene-vinyl acetate copolymer (trade name: Ultrasen 631 manufactured by Tosoh Corporation), a substrate film 1C having a thickness of 100 μm was obtained by a T-die method.

<Adhesive layer>
Adhesive 2A
A temperature of 100 ° C. was added while dripping a mixed solution of 446.5 g of 2-ethylhexyl acrylate, 45 g of methyl methacrylate, 80.0 g of methacrylic acid and 0.5 g of benzoyl peroxide as a polymerization initiator into 400 g of toluene as a solvent over 2 hours. Under the reaction for 4 hours, a solution of the copolymer (2) having a functional group was obtained. Next, 105.3 g of 2-hydroxyethyl methacrylate as a compound (1) having a photopolymerizable carbon-carbon double bond and a functional group and 0.1 g of hydroquinone as a polymerization inhibitor are added to the polymer (2) solution. The mixture was reacted at a temperature of 120 ° C. for 6 hours and then neutralized with acetic acid to obtain a solution of the copolymer (A). For 100 parts by mass of the copolymer (A) in the copolymer (A) solution, 1 part by mass of polyisocyanate (manufactured by Nippon Polyurethane Co., Ltd., trade name: Coronate L) (B), photopolymerization initiator (Nippon Ciba Geigy) 0.5 parts by mass (trade name: Irgacure 184) manufactured by the company was added to the copolymer (A) solution and mixed to prepare a pressure-sensitive adhesive 2A which is an acrylic energy ray-curable pressure-sensitive adhesive composition.

Adhesive 2B
It was prepared in the same manner as the adhesive 2A, except that the amount of 2-hydroxyethyl methacrylate was 40.0 g.

Adhesive 2C
The compounding amount of 2-hydroxyethyl methacrylate is 60.0 g, and X-62-7296 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) as a release agent is added to 0.5 parts by mass of the copolymer. It was prepared in the same manner as the pressure-sensitive adhesive 2A, except that part by mass was added.

Adhesive 2D
It was prepared in the same manner as the adhesive 2A except that the 2-hydroxyethyl methacrylate in the adhesive 2A was changed to 2-hydroxyethyl acrylate and the blending amount was 3.5 g.

<Adhesive layer>
Adhesive 3A
An acrylic resin was obtained by copolymerizing 40 mol% of butyl acrylate, 30 mol% of ethyl acrylate, and 30 mol% of acrylonitrile in a mixed solution of ethyl acetate and toluene in a volume ratio of 50:50.
A cured epoxy resin was obtained by blending 50 mol% of dicyandiamide and 50 mol% of bisphenol F-type epoxy resin in a 50:50 mixed solution of ethyl acetate and toluene in a volume ratio and copolymerizing them.
By blending 35 mol% of bisphenol A type epoxy resin, 35 mol% of bisphenol A type phenoxy resin, and 30 mol% of bisphenol A diglycidyl ether, phenoxy is copolymerized in a 50:50 mixed solution of ethyl acetate and toluene in a volume ratio. A resin was obtained.
30 parts by mass of the obtained acrylic resin, 50 parts by mass of the cured epoxy resin, and 20 parts by mass of the phenoxy resin were blended and mixed in an ethyl acetate solution. To 100 parts by mass of the obtained mixed resin, 5 parts by mass of silica particles having an average particle diameter of 0.5 μm (manufactured by Admatechs Co., Ltd., trade name: SO-E2) as an inorganic filler are blended in this solution and bonded. Agent 3A was obtained.

Example 1
The pressure-sensitive adhesive 2A was coated on a release liner so that the thickness of the pressure-sensitive adhesive layer was 20 μm, and the pressure-sensitive adhesive layer side was bonded to the base film 1A to obtain a pressure-sensitive adhesive tape. By applying the adhesive 3A on the release liner so that the thickness of the adhesive layer becomes 70 μm, and bonding the release liner in the pressure-sensitive adhesive tape to the pressure-sensitive adhesive layer side on the adhesive layer side. Thus, an adhesive film-integrated surface protective tape was obtained. In the following use, the release liner on the adhesive layer was peeled off and used.

(Example 2)
The pressure-sensitive adhesive 2B was coated on a release liner so that the thickness of the pressure-sensitive adhesive layer was 20 μm, and the pressure-sensitive adhesive layer side was bonded to the base film 1A to obtain a pressure-sensitive adhesive tape. By applying the adhesive 3A on the release liner so that the thickness of the adhesive layer becomes 70 μm, and bonding the release liner in the pressure-sensitive adhesive tape to the pressure-sensitive adhesive layer side on the adhesive layer side. Thus, an adhesive film-integrated surface protective tape was obtained. In the following use, the release liner on the adhesive layer was peeled off and used.

(Example 3)
The pressure-sensitive adhesive 2C was coated on a release liner so that the thickness of the pressure-sensitive adhesive layer was 20 μm, and the pressure-sensitive adhesive layer side was bonded to the base film 1A to obtain a pressure-sensitive adhesive tape. By applying the adhesive 3A on the release liner so that the thickness of the adhesive layer becomes 70 μm, and bonding the release liner in the pressure-sensitive adhesive tape to the pressure-sensitive adhesive layer side on the adhesive layer side. Thus, an adhesive film-integrated surface protective tape was obtained. In the following use, the release liner on the adhesive layer was peeled off and used.

Example 4
The pressure-sensitive adhesive 2D was coated on a release liner so that the thickness of the pressure-sensitive adhesive layer was 20 μm, and the pressure-sensitive adhesive layer side was bonded to the base film 1A to obtain a pressure-sensitive adhesive tape. By applying the adhesive 3A on the release liner so that the thickness of the adhesive layer becomes 70 μm, and bonding the release liner in the pressure-sensitive adhesive tape to the pressure-sensitive adhesive layer side on the adhesive layer side. Thus, an adhesive film-integrated surface protective tape was obtained. In the following use, the release liner on the adhesive layer was peeled off and used.

(Comparative Example 1)
The pressure-sensitive adhesive 2A was coated on a release liner so that the thickness of the pressure-sensitive adhesive layer was 20 μm, and the pressure-sensitive adhesive layer side was bonded to the base film 1B to obtain a pressure-sensitive adhesive tape. By applying the adhesive 3A on the release liner so that the thickness of the adhesive layer becomes 70 μm, and bonding the release liner in the pressure-sensitive adhesive tape to the pressure-sensitive adhesive layer side on the adhesive layer side. Thus, an adhesive film-integrated surface protective tape was obtained. In the following use, the release liner on the adhesive layer was peeled off and used.

(Comparative Example 2)
The pressure-sensitive adhesive 2A was applied onto a release liner so that the thickness of the pressure-sensitive adhesive layer was 20 μm, and the pressure-sensitive adhesive layer side was bonded to the base film 1C to obtain a pressure-sensitive adhesive tape. By applying the adhesive 3A on the release liner so that the thickness of the adhesive layer becomes 70 μm, and bonding the release liner in the pressure-sensitive adhesive tape to the pressure-sensitive adhesive layer side on the adhesive layer side. Thus, an adhesive film-integrated surface protective tape was obtained. In the following use, the release liner on the adhesive layer was peeled off and used.

  In Examples 1 to 4, a pressure-sensitive adhesive layer was provided on the cast film Ab from which the release film was peeled off.

(Manufacture of semiconductor chips)
A semiconductor chip was manufactured by the process shown in FIGS.
(1) A laser (7) is irradiated from the surface (1A) of the semiconductor wafer (1) using a DAL7360 (trade name, stealth dicing apparatus manufactured by DISCO Corporation) to give a bumped wafer having a diameter of 300 mm (about 12 inches). A modified layer (2) was formed. The size and pitch of the bumps are as follows.

Bump height: 80 μm, pitch: 160 μm, bump type: solder Thickness of modified layer [modified portion (2A)]: 30 μm

(2) On the surface (1A) provided with the modified layer of the semiconductor wafer, the adhesive film-integrated surface protective tape produced in Examples 1 to 4 and Comparative Examples 1 and 2 is on the adhesive layer (6) side. Pasted together.
(3) The surface (back surface) (1B) opposite to the surface on which the adhesive tape-integrated surface protective tape of the semiconductor wafer is pasted is used using DGP8761 (trade name, back surface grinding machine manufactured by DISCO Corporation). Then, it was ground to a thickness of 75 μm after grinding.

(4) After grinding, a fixing tape (21) was applied to the base film (4) surface side of the adhesive film-integrated surface protective tape, and fixed to the ring frame (22). The fixing tape (21) has a pressure-sensitive adhesive layer made of an ultraviolet curable acrylic copolymer on a base film made of an ethylene ionomer resin.
(5) The fixing tape (21) is expanded under the conditions of a speed of 1 mm / second and an expansion amount of 20 mm, and an adhesive film (adhesive layer) (6) and a semiconductor wafer (1) are placed on the adhesive tape (3). Divided.
(6) The divided semiconductor wafer (10A) becomes individual semiconductor chips (27) with an individualized adhesive film (adhesive layer) (6A), and after irradiation with ultraviolet light, the adhesive layer (5) to the semiconductor The chip (27) was picked up together with the adhesive film (adhesive layer) (6A).

  The following characteristics were evaluated for each of the semiconductor chips of Examples and Comparative Examples obtained as described above.

(Stretch rate)
The expansion / contraction rate of the adhesive film-integrated surface protective tape after ultraviolet irradiation was measured by the following method.
Using an ultraviolet irradiation device (“UVC-408” manufactured by Technovision, wavelength: 365 nm, illuminance: 70 mW / cm ² (on the work surface)) on the adhesive film-integrated surface protective tape, an integrated light amount of 500 mJ / cm ² was irradiated.
About the adhesive film-integrated surface protective tape after UV irradiation, in accordance with the tensile test method of JIS K 7127 (Plastic film and sheet tensile test method), a temperature of 23 ± 2 ° C., a humidity of 50 ± 5%, The test is performed at a distance of 50 mm between the marked line and the distance between the grips and at a speed of 300 mm / min, and the elongation at break in the machining direction (MD) is measured. The elongation at break is integrated with an adhesive film after ultraviolet irradiation. The expansion / contraction rate (%) of the surface protective tape was used.

(Pickup property)
The success rate of pickup with 100 pickup chips was determined. At that time, the pick-up success rate was calculated assuming that the picked-up element was held by the adhesive layer peeled off from the pressure-sensitive adhesive layer, and the pick-up success rate was calculated and evaluated according to the following criteria.

◎ (especially good): 100% pickup success rate
○ (Good): Pickup success rate is 95% or more and less than 100% × (Poor): Pickup success rate is less than 95%

(Expandable)
It was observed with an optical microscope whether the adhesive layer with semiconductor was divided after the expansion.
An evaluation was given with a circle indicating that the pressure-sensitive adhesive layer with semiconductor was divided by 90% or more as good, and an evaluation with x indicating that the division rate was less than 90%.

  The above results are shown in Table 1 below.

As shown in Table 1, Comparative Examples 1 and 2 in which the base film is polyethylene terephthalate or ethylene-vinyl acetate copolymer are both used for the stretch rate and pick-up property of the adhesive film-integrated surface protective tape. Although it was excellent, the expandability was poor.
On the other hand, in Examples 1-4 in which the base film is made of an acrylic resin, all the characteristics were excellent.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 1A Semiconductor wafer surface 1B Semiconductor wafer back surface 2 Modified layer 2A Modified part 3 Adhesive tape 4 Base film 5 Adhesive layer 6 Adhesive layer (adhesive film)
6A Divided adhesive layer (adhesive film)
7 Laser (for modified layer formation)
8 Grinder 9 Semiconductor wafer 10 under back grinding 10 Semiconductor wafer with back side ground 10A Divided semiconductor wafer 11 Pickup tape 11A Expanded pickup tape 12 Ring frame 13 Expander 14 Laser (for cutting adhesive film)
15 Pickup Needle 16 Pickup Collet 17 Chip with Adhesive Separated 21 Fixing Tape 21A Expanded Fixing Tape 22 Ring Frame 23 Expander 25 Pickup Needle 26 Pickup Collet 27 Separated Adhesive Tip with

Claims (6)

An adhesive film-integrated surface protective tape having an adhesive layer on a base film, and an adhesive film laminated on the adhesive layer,
The adhesive film-integrated surface protective tape, wherein the base film has at least one layer made of a (meth) acrylic copolymer.   The pressure-sensitive adhesive layer is an ultraviolet curable pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer is composed of a (meth) acrylic copolymer having a photopolymerizable carbon-carbon double bond in a side chain, 2. The adhesive film-integrated surface protective tape according to claim 1, wherein the content of the photopolymerizable carbon-carbon double bond of the acrylic copolymer is 0.5 to 1.2 meq / g. .   The (meth) acrylic copolymer having a photopolymerizable carbon-carbon double bond in the side chain, the (meth) acrylic copolymer having a functional group in the side chain, and a functional group that reacts with the functional group 3. The adhesive film-integrated surface protective tape according to claim 2, wherein the surface protective tape is obtained by reacting a compound containing a photopolymerizable carbon-carbon double bond.   The adhesive layer-integrated surface protective tape according to any one of claims 1 to 3, wherein the pressure-sensitive adhesive layer contains an ultraviolet curable release agent.   The adhesive film-integrated surface protection according to any one of claims 1 to 4, wherein the expansion / contraction rate of the adhesive film-integrated surface protective tape after ultraviolet irradiation is 120 to 200%. tape. A semiconductor chip on which a modified layer is formed in a bumped wafer having bumps as electrodes on a semiconductor wafer on which a semiconductor circuit is formed, and then the back surface of the semiconductor wafer is ground and divided into individual semiconductor chips. A manufacturing method of
The adhesive film-integrated surface protection tape according to any one of claims 1 to 5, wherein the semiconductor film is formed after the modified layer is formed and before the back surface of the semiconductor wafer is ground. A process of adhering on the side of the wafer on which the semiconductor circuit is formed on the adhesive film side; and
When the semiconductor chip is picked up after the backside grinding of the semiconductor wafer, or when the semiconductor wafer with the adhesive film integrated surface protection tape is transferred to the pickup tape, only the adhesive film is transferred to the semiconductor chip. A method for manufacturing a semiconductor chip, comprising a step of bonding the semiconductor chip.

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