TW202018033A - Resin composition for dicing film substrate, dicing film substrate, and dicing film - Google Patents

Resin composition for dicing film substrate, dicing film substrate, and dicing film Download PDF

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TW202018033A
TW202018033A TW108128323A TW108128323A TW202018033A TW 202018033 A TW202018033 A TW 202018033A TW 108128323 A TW108128323 A TW 108128323A TW 108128323 A TW108128323 A TW 108128323A TW 202018033 A TW202018033 A TW 202018033A
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dicing film
resin
ethylene
unsaturated carboxylic
carboxylic acid
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TWI823981B (en
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中野重則
佐久間雅巳
髙岡樹
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日商三井 陶氏聚合化學股份有限公司
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Abstract

The purpose of the present invention is to provide a resin composition for a dicing film substrate for producing a dicing film having both high strength and high thermal shrinkage. Provided are: a resin composition for a dicing film substrate, the resin composition containing 30-90 parts by mass of an ionomer (A) of an ethylene/unsaturated carboxylic acid/unsaturated carboxylic acid ester copolymer and 10-70 parts by mass of an ethylene copolymer (B) (with respect to 100 parts by mass in total of component (A) and component (B)), and having a Vicat softening point of less than 50 DEG C as defined according to JIS K7206-1999; a dicing film substrate using the resin composition; and a dicing film using the resin composition.

Description

切割膜基材用樹脂組成物、切割膜基材及切割膜 Resin composition for cutting film base material, cutting film base material and cutting film

本發明係關於一種切割膜基材用樹脂組成物、以及使用其之切割膜基材及切割膜。 The present invention relates to a resin composition for a dicing film base material, and a dicing film base material and a dicing film using the same.

於積體電路(IC,Integrated Circuit)等半導體裝置之製造過程中,一般而言,將形成有電路圖案之半導體晶圓薄膜化後,進行用於將半導體晶圓分割成晶片單元之切割步驟。於切割步驟中,將具有伸縮性之晶圓加工用膜(稱為切割膜或切割帶)貼合於半導體晶圓之背面後,藉由切割刀或雷射光等將半導體晶圓分割成晶片單元。然後,於下一擴張步驟(亦稱為延伸步驟)中,藉由使與切斷之晶圓對應之切割帶擴張,而小片化為晶片。 In the manufacturing process of semiconductor devices such as integrated circuits (ICs), generally, a semiconductor wafer formed with a circuit pattern is thinned, and then a dicing step for dividing the semiconductor wafer into chip units is performed. In the dicing step, the flexible wafer processing film (called dicing film or dicing tape) is attached to the back of the semiconductor wafer, and then the semiconductor wafer is divided into chip units by a dicing knife or laser . Then, in the next expansion step (also referred to as an extension step), the dicing tape corresponding to the cut wafer is expanded, and the chip is converted into a wafer.

於延伸步驟中,例如藉由將設置於切割膜之下之擴張台頂起而使切割膜擴張(延伸)。此時,為了分割晶片,重要的是於擴張台之整個面上切割膜均勻地擴張。又,由於在擴張台之周緣部施加於切割膜之應力大於擴張台之中心部,故而擴張步驟後之切割膜中之與擴張台周緣部對應之部分產生鬆弛。此種鬆弛會使分割之晶片之間隔變得不均勻,進而可能成為後續步驟中之製品不良之原因。 In the stretching step, for example, the cutting film is expanded (stretched) by jacking up an expansion table provided under the cutting film. At this time, in order to divide the wafer, it is important that the dicing film is uniformly expanded on the entire surface of the expansion table. In addition, since the stress applied to the cutting film at the peripheral edge portion of the expansion table is greater than the central portion of the expansion table, the portion of the cutting film after the expansion step corresponding to the peripheral edge portion of the expansion table is slack. Such slack will make the interval of the divided wafers non-uniform, which may be the cause of defective products in subsequent steps.

作為消除切割膜之鬆弛之手段,已知有熱收縮步驟,即,藉由對膜之鬆弛部分吹送實際溫度約80~100℃之熱風進行加 熱而使之收縮,恢復成原先之狀態(例如,參照專利文獻1)。為了實施該步驟,切割膜需要於80℃左右之溫度下具有較高之熱收縮性。 As a means to eliminate the slack of the cut film, a heat shrinking step is known, that is, by blowing hot air with an actual temperature of about 80 to 100°C on the slack portion of the film to add Heat shrinks it and restores it to its original state (for example, refer to Patent Document 1). In order to implement this step, the dicing film needs to have high heat shrinkage at a temperature of about 80°C.

又,近年來備受矚目之切割方法有隱形切割(註冊商標)法。於該方法中,藉由雷射光於晶圓之內部而非表面形成龜裂,於在低溫(約-15℃~0℃)下實施之下一擴張步驟中,利用切割膜之應力分割晶圓。藉此,可抑制切割步驟中之半導體製品之損耗,從而提高產率。作為此處所使用之切割膜,要求兼具能夠耐受晶圓之分割所需之應力的強度、及用以於熱收縮步驟中消除於晶圓分割時可能產生之鬆弛的熱收縮性。 In addition, the cutting method that has attracted much attention in recent years is the stealth cutting (registered trademark) method. In this method, laser light is used to form cracks inside the wafer rather than on the surface, and the next expansion step is performed at a low temperature (about -15 °C ~ 0 °C), using the stress of the dicing film to split the wafer . By this, the loss of the semiconductor product in the dicing step can be suppressed, thereby improving the yield. As the dicing film used here, it is required to have both the strength capable of withstanding the stress required for wafer division and the heat shrinkability for eliminating the slack that may be generated during wafer division in the heat shrinking step.

作為切割膜所使用之切割膜用基材,已知有:含有使具有羧基之化合物藉由陽離子交聯所得之離子聚合物、及含辛烯之共聚合體的切割膜基材(專利文獻2);具有包含JIS K7206所規定之菲卡軟化點為80℃以上之熱塑性樹脂之最下層、及包含JIS K7206所規定之菲卡軟化點為50℃以上且未滿80℃之熱塑性樹脂之其他層的切割膜基材(專利文獻3);及包含JIS K7206所規定之菲卡軟化點為50℃以上且未滿90℃之熱塑性樹脂的切割膜基材(專利文獻4)。 As a substrate for a dicing film used for a dicing film, a dicing film substrate containing an ionic polymer obtained by crosslinking a compound having a carboxyl group by cations and an octene-containing copolymer is known (Patent Document 2) ; The lowest layer containing a thermoplastic resin containing a Fika softening point specified by JIS K7206 of 80°C or more, and other layers containing a thermoplastic resin having a Fika softening point specified by JIS K7206 of 50°C or more and less than 80°C A dicing film base material (Patent Document 3); and a dicing film base material containing a thermoplastic resin having a Fika softening point defined by JIS K7206 of 50°C or more and less than 90°C (Patent Document 4).

又,於專利文獻5中揭示有一種切割膜,其作為適於進行隱形切割(註冊商標)之擴張性優異之切割膜,於-10℃下之初始彈性模數為200MPa以上且380MPa以下,Tan δ(損失彈性模數/儲存彈性模數)為0.080以上且0.3以下。 In addition, Patent Document 5 discloses a dicing film which is suitable for stealth cutting (registered trademark) and has excellent expandability. The initial elastic modulus at -10°C is 200 MPa or more and 380 MPa or less, Tan δ (loss elastic modulus/storage elastic modulus) is 0.080 or more and 0.3 or less.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開平9-007976公報 [Patent Literature 1] Japanese Patent Laid-Open No. 9-007976

[專利文獻2]日本專利特開2000-345129號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2000-345129

[專利文獻3]日本專利特開2009-231700號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2009-231700

[專利文獻4]日本專利特開2011-216508號公報 [Patent Document 4] Japanese Patent Laid-Open No. 2011-216508

[專利文獻5]日本專利特開2015-185591號公報 [Patent Document 5] Japanese Patent Laid-Open No. 2015-185591

於專利文獻1中,作為能夠藉由熱收縮步驟去除鬆弛之切割膜,例如記載有具有包含熔點為71℃之離子聚合物(使丙烯酸酯或甲基丙烯酸酯等聚合而成之三元聚合體之離子聚合物)與乙烯-乙酸乙烯酯共聚合體之摻合物所形成層之切割膜。但,對於切割膜之擴張性或強度等切割膜所需之基本性能無任何記載。 In Patent Document 1, as a dicing film capable of removing slack by a heat shrinking step, for example, a ternary polymer including an ionic polymer having a melting point of 71°C (polymerizing acrylate or methacrylate, etc.) is described. Ionic polymer) and a cut film of a layer formed by a blend of ethylene-vinyl acetate copolymer. However, there is no record of the basic properties required for the cutting film such as the expandability or strength of the cutting film.

於專利文獻2中,作為切割膜用基材之具體例,記載有含有乙烯/甲基丙烯酸/丙烯酸酯之三元共聚合體等離子聚合物、及含辛烯之共聚合體之切割膜用基材。但,無關於切割膜之熱收縮性之記載。 In Patent Document 2, as a specific example of a substrate for a dicing film, a substrate for a dicing film containing a ternary copolymer plasma polymer containing ethylene/methacrylic acid/acrylate and an octene-containing copolymer is described. However, there is no description about the heat shrinkage of the dicing film.

根據本發明者等人之研究,認為具有包含菲卡軟化點為80℃以上之熱塑性樹脂之層的專利文獻3之切割膜基材、或包含菲卡軟化點為50℃以上且未滿90℃之熱塑性樹脂的專利文獻4之切割膜基材於80℃下之熱收縮性較低,難以藉由熱收縮步驟使鬆弛恢復成原先之狀態。 According to the studies of the present inventors and others, it is considered that the dicing film substrate of Patent Document 3 having a layer containing a thermoplastic resin having a Fika softening point of 80°C or higher, or containing a Fika softening point of 50°C or higher and less than 90°C The heat-shrinkability of the dicing film base material of Patent Document 4 of the thermoplastic resin at 80°C is low, and it is difficult to restore the relaxation to the original state through the heat shrinking step.

又,於專利文獻5中記載有具有包含乙烯-α-烯烴共聚合體、或乙烯-α-烯烴共聚合體之離子聚合物之基材的切割膜。 但,並無關於如下切割膜用基材之記載,該切割膜用基材含有包含乙烯-不飽和羧酸-不飽和羧酸酯等三元以上之多元共聚合體之離子聚合物或三元以上之多元共聚合體與乙烯系共聚合體之樹脂組成物。 In addition, Patent Document 5 describes a dicing film having a base material containing an ionic polymer of an ethylene-α-olefin copolymer or an ethylene-α-olefin copolymer. However, there is no description about a substrate for a dicing film that contains an ionic polymer or a ternary or more ternary multi-component copolymer containing an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester or the like. The resin composition of the multi-component copolymer and the ethylene-based copolymer.

本發明係鑒於上述習知技術所存在之問題點而完成者,其課題在於提供一種用於製造兼具較高強度與較高熱收縮性之切割膜之切割膜基材用樹脂組成物。進而,本發明之課題在於提供一種使用本發明之切割膜基材用樹脂組成物之切割膜基材及切割膜。 The present invention has been completed in view of the problems of the above-mentioned conventional technology, and its object is to provide a resin composition for a dicing film base material for manufacturing a dicing film having both high strength and high heat shrinkability. Furthermore, the subject of this invention is providing the dicing film base material and dicing film using the resin composition for dicing film base materials of this invention.

即,根據本發明,提供以下所示之切割膜基材用樹脂組成物、切割膜基材及切割膜。 That is, according to the present invention, the following resin composition for a dicing film base material, dicing film base material, and dicing film are provided.

[1]一種切割膜基材用樹脂組成物,其含有:乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下、及乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份),且JIS K7206-1999所規定之菲卡軟化點未滿50℃。 [1] A resin composition for a dicing film base material, comprising: an ionic polymer (A) of an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer of 30 parts by mass or more and 90 parts by mass or less, and an ethylene-based The copolymer (B) is 10 parts by mass or more and 70 parts by mass or less (wherein the total of the component (A) and the component (B) is set to 100 parts by mass), and the Fika softening point prescribed by JIS K7206-1999 is less than 50℃.

[2]如[1]記載之切割膜基材用樹脂組成物,其中上述乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)之JIS K7206-1999所規定之菲卡軟化點為25℃以上且60℃以下。 [2] The resin composition for a dicing film base material according to [1], wherein the above-mentioned ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer ionic polymer (A) phenanthrene as specified in JIS K7206-1999 The card softening point is above 25°C and below 60°C.

[3]如[1]或[2]記載之切割膜基材用樹脂組成物,其中上述乙烯系共聚合體(B)係JIS K7206-1999所規定之菲卡軟化點為50℃以下之樹脂、或不具有上述菲卡軟化點之樹脂。 [3] The resin composition for a dicing film base material as described in [1] or [2], wherein the ethylene-based copolymer (B) is a resin with a Fika softening point defined by JIS K7206-1999 of 50°C or less, Or resins without the above-mentioned Fika softening point.

[4]如[1]至[3]中任一項記載之切割膜基材用樹脂組成物,其中 上述乙烯系共聚合體(B)係自乙烯-α-烯烴共聚合體及乙烯-不飽和羧酸酯共聚合體所組成之群組選擇之至少一種。 [4] The resin composition for a dicing film base material according to any one of [1] to [3], wherein The above-mentioned ethylene-based copolymer (B) is at least one selected from the group consisting of an ethylene-α-olefin copolymer and an ethylene-unsaturated carboxylic acid ester copolymer.

[5]如[1]至[4]中任一項記載之切割膜基材用樹脂組成物,其中藉由依據JIS K7210-1999之方法於190℃、負載2160g下所測定之上述乙烯系共聚合體(B)之熔融流動速率(MFR)為0.2g/10分鐘~30.0g/10分鐘。 [5] The resin composition for a dicing film base material according to any one of [1] to [4], wherein the above ethylene-based copolymer is measured by a method according to JIS K7210-1999 at 190°C under a load of 2160 g The melt flow rate (MFR) of the combination (B) is 0.2 g/10 minutes to 30.0 g/10 minutes.

[6]如[1]至[5]中任一項記載之切割膜基材用樹脂組成物,其中藉由依據JIS K7210-1999之方法於190℃、負載2160g下所測定之上述切割膜基材用樹脂組成物之熔融流動速率(MFR)為0.1g/10分鐘~50g/10分鐘。 [6] The resin composition for a dicing film substrate according to any one of [1] to [5], wherein the dicing film base is measured by a method according to JIS K7210-1999 at 190°C under a load of 2160 g The melt flow rate (MFR) of the resin composition for wood is 0.1 g/10 minutes to 50 g/10 minutes.

[7]一種切割膜基材,其含有至少一層包含如[1]至[6]中任一項記載之切割膜基材用樹脂組成物之層。 [7] A dicing film base material comprising at least one layer containing the resin composition for a dicing film base material according to any one of [1] to [6].

[8]如[7]記載之切割膜基材,其含有:包含如[1]至[6]中任一項記載之切割膜基材用樹脂組成物之第1樹脂層、及積層於上述第1樹脂層之包含樹脂(C)之第2樹脂層。 [8] The dicing film base material according to [7], comprising: a first resin layer including the resin composition for a dicing film base material according to any one of [1] to [6], and a layer deposited on the above The second resin layer containing the resin (C) in the first resin layer.

[9]如[8]記載之切割膜基材,其中上述樹脂(C)係自乙烯-不飽和羧酸系共聚合體及上述乙烯-不飽和羧酸系共聚合體之離子聚合物所組成之群組選擇之至少1種。 [9] The dicing film substrate according to [8], wherein the resin (C) is a group composed of an ionic polymer of an ethylene-unsaturated carboxylic acid copolymer and the ethylene-unsaturated carboxylic acid copolymer At least one group selection.

[10]一種切割膜,其特徵在於具有:如[7]至[9]中任一項記載之切割膜基材、及積層於上述切割膜基材之至少一面之黏著層。 [10] A dicing film comprising the dicing film base material according to any one of [7] to [9], and an adhesive layer laminated on at least one side of the dicing film base material.

本發明提供一種用於製造兼具較高強度與較高熱收縮性之切割膜之切割膜基材用樹脂組成物、以及使用其之切割膜基材及切割膜。 The invention provides a resin composition for a dicing film base material for manufacturing a dicing film having both high strength and high heat shrinkability, and a dicing film base material and a dicing film using the same.

1‧‧‧第1樹脂層 1‧‧‧The first resin layer

2‧‧‧第2樹脂層 2‧‧‧The second resin layer

10‧‧‧切割膜基材 10‧‧‧Cut film base material

11‧‧‧黏著層 11‧‧‧ Adhesive layer

20‧‧‧切割膜 20‧‧‧Cutting film

圖1A係表示本發明之切割膜基材之一實施形態之剖面圖。 FIG. 1A is a cross-sectional view showing an embodiment of a dicing film substrate of the present invention.

圖1B係表示本發明之切割膜基材之一實施形態之剖面圖。 1B is a cross-sectional view showing an embodiment of the dicing film substrate of the present invention.

圖2A係表示本發明之切割膜之一實施形態之剖面圖。 2A is a cross-sectional view showing an embodiment of the dicing film of the present invention.

圖2B係表示本發明之切割膜之一實施形態之剖面圖。 2B is a cross-sectional view showing an embodiment of the dicing film of the present invention.

以下,對於本發明之切割膜基材用樹脂組成物詳細地進行說明,且亦對切割膜基材及切割膜進行詳細描述。 Hereinafter, the resin composition for a dicing film base material of the present invention will be described in detail, and the dicing film base material and the dicing film will also be described in detail.

再者,於本說明書中,表示數值範圍之「~」之記法係包括數值範圍之下限值與上限值之值之含義。 In addition, in this specification, the notation of "~" indicating the numerical range includes the meaning of the lower limit value and the upper limit value of the numerical range.

又,「(甲基)丙烯酸」係包含「丙烯酸」及「甲基丙烯酸」雙方所使用之記法,「(甲基)丙烯酸酯」係包含「丙烯酸酯」及「甲基丙烯酸酯」雙方所使用之記法。 In addition, "(meth)acrylic acid" includes the notation used by both "acrylic acid" and "methacrylic acid", and "(meth)acrylate" includes the use of both "acrylate" and "methacrylate" Notation.

於半導體晶圓之製造過程中,切割膜需要於80℃附近之溫度下具有較高之熱收縮性,以利用膜之熱收縮來消除擴張(延伸)步驟後之切割膜之鬆弛(恢復成原先之狀態)。於本發明中,藉由使用如下樹脂組成物製造切割膜基材,可製造兼具較高強度與較高熱收縮性之切割膜,該樹脂組成物包含乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下、及乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份)。其機制雖不明確,但可如下所示般考慮。 In the manufacturing process of semiconductor wafers, the dicing film needs to have a high heat shrinkability at a temperature near 80°C to use the thermal contraction of the film to eliminate the slack of the dicing film after the expansion (extension) step (revert to the original State). In the present invention, by using the following resin composition to manufacture a dicing film base material, a dicing film having both high strength and high heat shrinkability can be manufactured. The resin composition includes ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid The ionic polymer (A) of the ester copolymer is 30 parts by mass or more and 90 parts by mass or less, and the ethylene-based copolymer (B) is 10 parts by mass or more and 70 parts by mass or less (wherein, the component (A) and the component (B) The total is 100 parts by mass). Although the mechanism is not clear, it can be considered as follows.

已知藉由對聚烯烴系樹脂調配乙烯系共聚合體而提 高其熱收縮性。但,若使用包含聚烯烴系樹脂與乙烯系共聚合體之樹脂組成物製造膜,則該膜之強度及擴張性作為切割膜並不充分。另一方面,於本發明中,藉由使用乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物及乙烯系共聚合體製造菲卡軟化點未滿50℃之樹脂組成物,可獲得於不使源於離子聚合物之離子交聯結構之膜強度或擴張性(分割性)大幅度降低之情況下提高了熱收縮性之切割膜。 It is known to improve the polyolefin resin by blending an ethylene copolymer High heat shrinkage. However, if a resin composition containing a polyolefin-based resin and an ethylene-based copolymer is used to produce a film, the strength and expandability of the film are insufficient as a dicing film. On the other hand, in the present invention, by using an ionic polymer of an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer and an ethylene-based copolymer to produce a resin composition having a Fica softening point of less than 50°C, A cut film with improved heat shrinkability without greatly reducing the film strength or expansibility (dividability) of the ionic cross-linked structure derived from the ionic polymer.

本發明之切割膜可較佳地用於不僅實施將半導體晶圓分割成晶片單元之切割步驟與擴張步驟、且實施熱收縮步驟之半導體元件之製造方法。特別是本發明之切割膜由於兼具較高強度與較高熱收縮性,故而可較佳地用於採用在擴張步驟中對切割膜施加比習知法(刀片切割法或雷射剝蝕法等)大之應力之隱形切割(註冊商標)法之製造方法。藉由使用本發明之切割膜,能夠使分割後之晶片之間隔變得均勻,減少其後之步驟中之製品不良,從而可以較高之產率製造半導體裝置。 The dicing film of the present invention can be preferably used for a method of manufacturing a semiconductor device that not only implements a dicing step and an expansion step for dividing a semiconductor wafer into wafer units, but also performs a heat shrinking step. In particular, since the cutting film of the present invention has both high strength and high heat shrinkage, it can be preferably used for applying the conventional method (blade cutting method or laser ablation method, etc.) to the cutting film in the expansion step Manufacturing method of invisible cutting (registered trademark) method of large stress. By using the dicing film of the present invention, the interval of the divided wafers can be made uniform, and the product defects in the subsequent steps can be reduced, so that the semiconductor device can be manufactured with higher yield.

以下,列舉作為例示之實施形態進行本發明之說明,但本發明並不限定於以下之實施形態。 Hereinafter, the present invention will be described by way of exemplary embodiments, but the present invention is not limited to the following embodiments.

1.切割膜基材用樹脂組成物 1. Resin composition for cutting film substrate

本發明之第1樣態係切割膜基材用樹脂組成物。切割膜基材用樹脂組成物含有:乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下、及乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份)。 The first aspect of the present invention is a resin composition for a dicing film base material. The resin composition for a dicing film base material contains: an ionic polymer (A) of ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer of 30 parts by mass or more and 90 parts by mass or less, and an ethylene-based copolymer (B) 10 Not less than 70 parts by mass (the total of component (A) and component (B) is set to 100 parts by mass).

1-1.樹脂(A) 1-1. Resin (A)

作為樹脂(A)所使用之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(以下,亦簡稱為「離子聚合物(A)」)係乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之羧基之一部分或全部經金屬(離子)中和所得者。於本發明中,將共聚合體之酸基之至少一部分經金屬(離子)中和者稱為「離子聚合物」,將共聚合體之酸基未經金屬(離子)中和者稱為「共聚合體」。 Ionic polymer of ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer used as resin (A) (hereinafter, also referred to simply as "ionic polymer (A)") is an ethylene-unsaturated carboxylic acid-not A part or all of the carboxyl group of the saturated carboxylate copolymer is obtained by neutralizing the metal (ion). In the present invention, those in which at least a part of the acid groups of the copolymer are neutralized with metals (ions) are called "ionic polymers", and those in which the acid groups of the copolymers are not neutralized with metals (ions) are called "copolymers" ".

構成上述離子聚合物(A)之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體係使乙烯與不飽和羧酸與不飽和羧酸酯共聚而成之至少三元之共聚合體,亦可為進而與第4共聚合成分共聚而成之四元以上之多元共聚合體。再者,可單獨使用一種乙烯-不飽和羧酸-不飽和羧酸酯共聚合體,亦可併用兩種以上之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體。 The ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymerization system constituting the above-mentioned ionic polymer (A) is an at least ternary copolymer obtained by copolymerizing ethylene with an unsaturated carboxylic acid and an unsaturated carboxylic acid ester, or It is a quaternary or more multi-component copolymer obtained by copolymerization with the fourth copolymerization component. Furthermore, one ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer may be used alone, or two or more ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymers may be used in combination.

作為構成乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之不飽和羧酸,例如可列舉:丙烯酸、甲基丙烯酸、乙基丙烯酸、伊康酸、伊康酸酐、反丁烯二酸、丁烯酸、順丁烯二酸、順丁烯二酸酐等碳數4~8之不飽和羧酸等。特佳為丙烯酸或甲基丙烯酸。 Examples of the unsaturated carboxylic acid constituting the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer include acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, Unsaturated carboxylic acids with 4 to 8 carbon atoms, such as crotonic acid, maleic acid, maleic anhydride, etc. Particularly preferred is acrylic acid or methacrylic acid.

作為構成乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之不飽和羧酸酯,較佳為不飽和羧酸烷基酯。烷基酯之烷基部位之碳數較佳為1~12,更佳為1~8,進而較佳為1~4。作為烷基部位之例,可列舉:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、2-乙基己基、異辛基等。作為不飽和羧酸烷基酯之具體例,可列舉:丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丁酯、丙烯酸正丁酯、 丙烯酸異辛酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丁酯、順丁烯二酸二甲酯、順丁烯二酸二乙酯等(甲基)丙烯酸烷基酯。 The unsaturated carboxylic acid ester constituting the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer is preferably an unsaturated carboxylic acid alkyl ester. The carbon number of the alkyl portion of the alkyl ester is preferably from 1 to 12, more preferably from 1 to 8, and even more preferably from 1 to 4. Examples of the alkyl moiety include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, second butyl, 2-ethylhexyl, and isooctyl. Specific examples of unsaturated carboxylic acid alkyl esters include methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, Alkyl (meth)acrylates such as isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, dimethyl maleate, diethyl maleate .

當乙烯-不飽和羧酸-不飽和羧酸酯共聚合體為四元以上之多元共聚合體時,亦可包含形成多元共聚合體之單體(第4共聚合成分)。作為第4共聚合成分,可列舉:不飽和烴(例如,丙烯、丁烯、1,3-丁二烯、戊烯、1,3-戊二烯、1-己烯等)、乙烯酯(例如,乙酸乙烯酯、丙酸乙烯酯等)、乙烯基硫酸或乙烯基硝酸等之氧化物、鹵素化合物(例如,氯乙烯、氟乙烯等)、含乙烯基之一級/二級胺化合物、一氧化碳、二氧化硫等。 When the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer is a quaternary or more multicomponent copolymer, a monomer (fourth copolymerization component) that forms a multicomponent copolymer may also be included. Examples of the fourth copolymerization component include unsaturated hydrocarbons (for example, propylene, butene, 1,3-butadiene, pentene, 1,3-pentadiene, 1-hexene, etc.), vinyl esters ( For example, vinyl acetate, vinyl propionate, etc.), oxides of vinyl sulfuric acid or vinyl nitric acid, halogen compounds (eg, vinyl chloride, vinyl fluoride, etc.), vinyl-containing first/secondary amine compounds, carbon monoxide , Sulfur dioxide, etc.

共聚合體之形態可為嵌段共聚合體、無規共聚合體、接枝共聚合體中之任意者,亦可為三元共聚合體、四元以上之多元共聚合體中之任意者。其中,就可工業獲取之方面而言,較佳為三元無規共聚合體、或三元無規共聚合體之接枝共聚合體,更佳為三元無規共聚合體。 The form of the copolymer may be any of a block copolymer, a random copolymer, and a graft copolymer, and may also be any of a ternary copolymer or a quaternary multi-component copolymer. Among them, in terms of industrial availability, a ternary random copolymer or a graft copolymer of a ternary random copolymer is preferred, and a ternary random copolymer is more preferred.

作為乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之具體例,可列舉:乙烯-甲基丙烯酸-丙烯酸丁酯共聚合體等三元共聚合體。 Specific examples of the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer include ternary copolymers such as ethylene-methacrylic acid-butyl acrylate copolymer.

將構成乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之構成單位之總量設為100質量%時,乙烯-不飽和羧酸-不飽和羧酸酯共聚合體中之來自不飽和羧酸之構成單位之含有比率較佳為4質量%以上且20質量%以下,更佳為5質量%以上且15質量%以下。將構成乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之構成單位之總量設為100質量%時,乙烯-不飽和羧酸-不飽和羧酸酯共聚合體中之來 自不飽和羧酸酯之構成單位之含有比率較佳為1質量%以上且20質量%以下,更佳為5質量%以上且18質量%以下,特佳為5質量%以上且17質量%以下。就膜之擴張性之觀點而言,來自不飽和羧酸酯之構成單位之含有比率較佳為1質量%以上,較佳為5質量%以上。又,就防止黏連及融合之觀點而言,來自不飽和羧酸酯之構成單位之含有比率較佳為20質量%以下,更佳為18質量%以下,特佳為17質量%以下。 When the total amount of constituent units constituting the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer is 100% by mass, the unsaturated carboxylic acid in the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer is derived from The content ratio of the constituent units is preferably 4% by mass or more and 20% by mass or less, and more preferably 5% by mass or more and 15% by mass or less. When the total amount of the constituent units constituting the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer is 100% by mass, the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer comes out The content ratio of the constituent units of the unsaturated carboxylic acid ester is preferably 1% by mass or more and 20% by mass or less, more preferably 5% by mass or more and 18% by mass or less, and particularly preferably 5% by mass or more and 17% by mass or less . From the viewpoint of the expandability of the membrane, the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is preferably 1% by mass or more, and preferably 5% by mass or more. In addition, from the viewpoint of preventing blocking and fusion, the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is preferably 20% by mass or less, more preferably 18% by mass or less, and particularly preferably 17% by mass or less.

於本發明中,作為樹脂(A)所使用之離子聚合物(A)較佳為上述乙烯-不飽和羧酸-不飽和羧酸酯共聚合體中所含之羧基經金屬離子以任意比例交聯(中和)所得者。作為酸基之中和所使用之金屬離子,可列舉:鋰離子、鈉離子、鉀離子、銣離子、銫離子、鋅離子、鎂離子、錳離子等金屬離子。該等金屬離子之中,就工業化製品之易獲取性而言,較佳為鎂離子、鈉離子及鋅離子,更佳為鈉離子及鋅離子,特佳為鋅離子。 In the present invention, the ionic polymer (A) used as the resin (A) is preferably the carboxyl group contained in the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer, which is crosslinked by metal ions at an arbitrary ratio (Neutralization) income. Examples of the metal ion used in the neutralization of the acid group include metal ions such as lithium ion, sodium ion, potassium ion, rubidium ion, cesium ion, zinc ion, magnesium ion, and manganese ion. Among these metal ions, in terms of the availability of industrial products, magnesium ions, sodium ions and zinc ions are preferred, sodium ions and zinc ions are more preferred, and zinc ions are particularly preferred.

金屬離子可單獨使用一種,或亦可併用兩種以上。 One metal ion may be used alone, or two or more may be used in combination.

離子聚合物(A)中之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之中和度(以下,亦稱為「離子聚合物(A)之中和度」)無特別限定,較佳為10%~100%,更佳為30%~100%。若中和度為上述範圍內,則使膜強度或分割性提高,故而較佳。 The degree of neutralization of the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer in the ionic polymer (A) (hereinafter, also referred to as "the degree of neutralization of the ionic polymer (A)") is not particularly limited, It is preferably 10% to 100%, and more preferably 30% to 100%. If the degree of neutralization is within the above range, the film strength or splittability is improved, which is preferable.

再者,離子聚合物(A)之中和度係經金屬離子中和之羧基相對於乙烯-不飽和羧酸-不飽和羧酸酯共聚合體中所含之全部羧基之莫耳數之比例(莫耳%)。 Furthermore, the degree of neutralization of the ionic polymer (A) is the ratio of the number of moles of carboxyl groups neutralized by metal ions to the total number of carboxyl groups contained in the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer (( Mohr%).

作為乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A),可使用上市之市售品。作為市售品,例如可列舉: Dow-Mitsui Polychemicals股份有限公司製造之Himilan(註冊商標)系列等。 As the ionic polymer (A) of the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer, commercially available products can be used. Examples of commercially available products include: Dow-Mitsui Polychemicals Co., Ltd.'s Himilan (registered trademark) series, etc.

乙烯-不飽和羧酸-不飽和羧酸酯之離子聚合物(A)之熔融流動速率(MFR)較佳為0.2g/10分鐘~20.0g/10分鐘之範圍,更佳為0.5g/10分鐘~20.0g/10分鐘,進而較佳為0.5g/10分鐘~18.0g/10分鐘。若熔融流動速率為上述範圍內,則於成形膜時有利。 The melt flow rate (MFR) of the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester ionomer (A) is preferably in the range of 0.2 g/10 minutes to 20.0 g/10 minutes, more preferably 0.5 g/10 Minutes to 20.0 g/10 minutes, and further preferably 0.5 g/10 minutes to 18.0 g/10 minutes. If the melt flow rate is within the above range, it is advantageous when forming a film.

再者,MFR係藉由依據JIS K7210-1999之方法於190℃、負載2160g下進行測定所得之值。 In addition, MFR is the value measured by the method based on JIS K7210-1999 at 190 degreeC and a load of 2160g.

進而,乙烯-不飽和羧酸-不飽和羧酸酯之離子聚合物(A)之菲卡軟化點較佳為25℃以上且60℃以下,更佳為35℃以上且60℃以下。若離子聚合物(A)之菲卡軟化點為上述範圍內,則容易將樹脂組成物之菲卡軟化點調整為未滿50℃。 Furthermore, the Fica softening point of the ionic polymer (A) of the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester is preferably 25°C or higher and 60°C or lower, and more preferably 35°C or higher and 60°C or lower. If the Fika softening point of the ionic polymer (A) is within the above range, it is easy to adjust the Fika softening point of the resin composition to less than 50°C.

再者,菲卡軟化點係依據JIS K7206-1999所規定之A50法進行測定所得之值。 In addition, the Fika softening point is a value measured according to the A50 method specified in JIS K7206-1999.

本發明之切割膜基材用樹脂組成物中之樹脂(A)之含量相對於樹脂(A)及下述樹脂(B)之合計100質量份,為30質量份以上且90質量份以下,較佳為40質量份以上且90質量份以下,更佳為50質量份以上且70質量份以下。若樹脂(A)之含量為30質量份以上,則可獲得作為切割膜之充分之強度,若為90質量份以下,則可提高熱收縮率。 The content of the resin (A) in the resin composition for a dicing film base material of the present invention is 30 parts by mass or more and 90 parts by mass or less with respect to the total of 100 parts by mass of the resin (A) and the following resin (B). It is preferably 40 parts by mass or more and 90 parts by mass or less, and more preferably 50 parts by mass or more and 70 parts by mass or less. If the content of the resin (A) is 30 parts by mass or more, sufficient strength as a dicing film can be obtained, and if it is 90 parts by mass or less, the heat shrinkage rate can be improved.

1-2.樹脂(B) 1-2. Resin (B)

作為樹脂(B)所使用之乙烯系共聚合體(B)(以下,亦簡稱為「共聚合體(B)」)係乙烯與其他單體之共聚合體,其種類無特別限定。 但,重要的是,與上述離子聚合物(A)一起製備樹脂組成物時,將如使該組成物之菲卡軟化點未滿50℃之離子聚合物(A)與共聚合體(B)加以組合。就此種觀點而言,共聚合體(B)較佳為菲卡軟化點為50℃以下之樹脂、或不具有菲卡軟化點之樹脂。又,於共聚合體(B)具有菲卡軟化點之情形時,就加工性之觀點而言,較佳為菲卡軟化點為25℃以上。 The ethylene-based copolymer (B) (hereinafter, also simply referred to as "copolymer (B)") used as the resin (B) is a copolymer of ethylene and other monomers, and the type thereof is not particularly limited. However, it is important that when the resin composition is prepared together with the above-mentioned ionic polymer (A), the ionic polymer (A) and the interpolymer (B) are added if the composition has a Fika softening point of less than 50°C. combination. From such a viewpoint, the copolymer (B) is preferably a resin having a Fica softening point of 50° C. or lower, or a resin having no Fica softening point. In addition, when the copolymer (B) has a Fica softening point, from the viewpoint of processability, the Fica softening point is preferably 25° C. or higher.

再者,菲卡軟化點係依據JIS K7206-1999所規定之A50法進行測定所得之值。 In addition, the Fika softening point is a value measured according to the A50 method specified in JIS K7206-1999.

作為本發明中所使用之乙烯系共聚合體(B)之一例,可列舉:乙烯-α-烯烴共聚合體、乙烯-不飽和羧酸酯共聚合體、乙烯-乙烯酯共聚合體等,較佳為乙烯-a烯烴共聚合體、及乙烯-不飽和羧酸酯共聚合體。 Examples of the ethylene-based copolymer (B) used in the present invention include ethylene-α-olefin copolymers, ethylene-unsaturated carboxylic acid ester copolymers, and ethylene-vinyl ester copolymers, and preferably ethylene -a olefin copolymer and ethylene-unsaturated carboxylate copolymer.

乙烯-α-烯烴共聚合體係乙烯與α-烯烴之共聚合體。該共聚合體中可僅包含1種α-烯烴,亦可包含2種以上。α-烯烴之具體例包括:丙烯、1-丁烯、1-戊烯、1-己烯、3-甲基-1-丁烯、3,3-二甲基-1-丁烯、3-甲基-1-戊烯、4-甲基-1-戊烯、1-辛烯、1-癸烯、1-十二烯等。其中,就易獲取性而言,較佳為丙烯、1-丁烯、1-戊烯、1-己烯、4-甲基-1-戊烯、及1-辛烯。再者,乙烯-α-烯烴共聚合體可為無規共聚合體,亦可為嵌段共聚合體,較佳為無規共聚合體。 Ethylene-α-olefin copolymerization system Copolymer of ethylene and α-olefin. This copolymer may contain only one kind of α-olefin, or two or more kinds. Specific examples of α-olefins include: propylene, 1-butene, 1-pentene, 1-hexene, 3-methyl-1-butene, 3,3-dimethyl-1-butene, 3- Methyl-1-pentene, 4-methyl-1-pentene, 1-octene, 1-decene, 1-dodecene, etc. Among them, in terms of availability, propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene, and 1-octene are preferred. Furthermore, the ethylene-α-olefin copolymer may be a random copolymer or a block copolymer, preferably a random copolymer.

乙烯-α-烯烴共聚合體中所含之來自乙烯之構成單位之含有比例無特別限定,較佳為超過50mol%且95mol%以下,更佳為70mol%以上且94mol%以下。乙烯-α-烯烴共聚合體中所含之來自α-烯烴之構成單位(以下,亦記為「α-烯烴單元」)之比例較佳為5mol%以上且未滿50mol%,更佳為6mol%以上且30mol%以 下。此種乙烯-α-烯烴共聚合體對於確保收縮性有利。 The content ratio of constituent units derived from ethylene contained in the ethylene-α-olefin copolymer is not particularly limited, but it is preferably more than 50 mol% and 95 mol% or less, and more preferably 70 mol% or more and 94 mol% or less. The proportion of constituent units derived from α-olefins (hereinafter, also referred to as “α-olefin units”) contained in the ethylene-α-olefin copolymer is preferably 5 mol% or more and less than 50 mol%, more preferably 6 mol% Above and 30mol% under. Such an ethylene-α-olefin copolymer is advantageous for ensuring shrinkage.

作為乙烯-α-烯烴共聚合體,較佳為密度為895kg/m3以下、特別是860~890kg/m3者。 As the ethylene-olefin copolymer -α- body, preferably a density of 895kg / m 3 or less, particularly 860 ~ 890kg / m 3 persons.

乙烯-不飽和羧酸酯共聚合體係乙烯與不飽和羧酸酯之共聚合體。該共聚合體中可僅包含1種不飽和羧酸酯構成單位,亦可包含2種以上。作為構成不飽和羧酸酯構成單元之不飽和羧酸,例如可列舉:丙烯酸、甲基丙烯酸、乙基丙烯酸、伊康酸、伊康酸酐、反丁烯二酸、丁烯酸、順丁烯二酸、順丁烯二酸酐等碳數4~8之不飽和羧酸等。特佳為丙烯酸或甲基丙烯酸。 Ethylene-unsaturated carboxylic acid ester copolymerization system. Copolymer of ethylene and unsaturated carboxylic acid ester. The copolymer may contain only one type of unsaturated carboxylic acid ester structural unit, or two or more types. Examples of the unsaturated carboxylic acid constituting the constituent unit of the unsaturated carboxylic acid ester include acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, crotonic acid and maleic acid Dicarboxylic acid, maleic anhydride and other unsaturated carboxylic acids with 4-8 carbon atoms. Particularly preferred is acrylic acid or methacrylic acid.

進而,作為乙烯-不飽和羧酸酯共聚合體中所含之不飽和羧酸酯構成單位,較佳為不飽和羧酸烷基酯。烷基酯之烷基部位之碳數較佳為1~12,更佳為1~8,進而較佳為1~4。作為烷基部位之例,可列舉:甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、2-乙基己基、異辛基等。作為不飽和羧酸烷基酯之具體例,可列舉:丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丁酯、丙烯酸正丁酯、丙烯酸異辛酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丁酯、順丁烯二酸二甲酯、順丁烯二酸二乙酯等(甲基)丙烯酸烷基酯。 Furthermore, the unsaturated carboxylic acid ester constituent unit contained in the ethylene-unsaturated carboxylic acid ester copolymer is preferably an unsaturated carboxylic acid alkyl ester. The carbon number of the alkyl portion of the alkyl ester is preferably from 1 to 12, more preferably from 1 to 8, and even more preferably from 1 to 4. Examples of the alkyl moiety include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, second butyl, 2-ethylhexyl, and isooctyl. Specific examples of unsaturated carboxylic acid alkyl esters include methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, Alkyl (meth)acrylates such as isobutyl methacrylate, dimethyl maleate, and diethyl maleate.

將構成乙烯-不飽和羧酸酯共聚合體之構成單位之總量設為100質量%時,乙烯-不飽和羧酸酯共聚合體中之來自不飽和羧酸酯之構成單位之含有比率較佳為5質量%以上且40質量%以下,更佳為7質量%以上且40質量%以下,特佳為8質量%以上且40質量%以下。若來自不飽和羧酸酯之構成單位之含有比率為上述上限值以下,則就膜加工性之觀點而言較佳。又,若來自不飽和羧 酸酯之構成單位之含有比率為上述下限值以上,則就收縮性之觀點而言較佳。 When the total amount of the constituent units constituting the ethylene-unsaturated carboxylic acid ester copolymer is 100% by mass, the content ratio of the constituent units derived from the unsaturated carboxylic acid ester in the ethylene-unsaturated carboxylic acid ester copolymer is preferably 5 mass% or more and 40 mass% or less, more preferably 7 mass% or more and 40 mass% or less, particularly preferably 8 mass% or more and 40 mass% or less. If the content ratio of the structural unit derived from an unsaturated carboxylic acid ester is below the above upper limit, it is preferable from the viewpoint of film processability. Also, if it comes from unsaturated carboxyl The content ratio of the structural unit of an acid ester is more than the said lower limit, It is preferable from a viewpoint of shrinkage.

乙烯系共聚合體(B)之熔融流動速率(MFR)較佳為0.2g/10分鐘~30.0g/10分鐘之範圍,更佳為0.5g/10分鐘~25.0g/10分鐘。若熔融流動速率為上述範圍內,則於成形樹脂組成物時有利。 The melt flow rate (MFR) of the ethylene-based copolymer (B) is preferably in the range of 0.2 g/10 minutes to 30.0 g/10 minutes, and more preferably 0.5 g/10 minutes to 25.0 g/10 minutes. When the melt flow rate is within the above range, it is advantageous when molding the resin composition.

再者,MFR係藉由依據JIS K7210-1999之方法於190℃、負載2160g下進行測定所得之值。 In addition, MFR is the value measured by the method based on JIS K7210-1999 at 190 degreeC and a load of 2160g.

進而,乙烯系共聚合體(B)之熔點較佳為30℃以上且100℃以下,更佳為30℃以上且80℃以下。 Furthermore, the melting point of the ethylene-based copolymer (B) is preferably 30°C or higher and 100°C or lower, more preferably 30°C or higher and 80°C or lower.

再者,熔點係依據JIS-K7121(1987年)藉由示差掃描熱量計(DSC)進行測定所得之熔解溫度。 In addition, the melting point is the melting temperature measured by a differential scanning calorimeter (DSC) according to JIS-K7121 (1987).

切割膜基材用樹脂組成物中之樹脂(B)之含量相對於樹脂(A)及樹脂(B)之合計100質量份,為10質量份以上且未滿70質量份,較佳為10質量份以上且60質量份以下,更佳為20質量份以上且50質量份以下。若樹脂(B)之含量為10質量份以上,則發揮由樹脂(B)產生之熱收縮率提高效果,若未滿70質量份,則切割膜基材之強度變得不充分之擔憂較低。 The content of the resin (B) in the resin composition for a dicing film base material is 10 parts by mass or more and less than 70 parts by mass relative to the total of 100 parts by mass of the resin (A) and the resin (B), preferably 10 parts by mass It is more than 60 parts by mass and more preferably 20 parts by mass or more and 50 parts by mass or less. If the content of the resin (B) is 10 parts by mass or more, the effect of improving the heat shrinkage rate by the resin (B) is exerted, and if it is less than 70 parts by mass, there is less concern that the strength of the dicing film substrate becomes insufficient .

1-3.其他聚合體及添加劑 1-3. Other polymers and additives

亦可於切割膜基材用樹脂組成物中在無損本發明之效果之範圍內視需要添加其他聚合體或各種添加劑。作為其他聚合體之例,可列舉:聚醯胺、聚胺基甲酸酯、二元共聚合體之離子聚合物等。此種其他聚合體相對於樹脂(A)及樹脂(B)之合計100質量份,可以例如20質量份以下之比例進行調配。作為添加劑之一例,可列舉: 抗靜電劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、顏料、染料、滑劑、抗黏連劑、抗靜電劑、防黴劑、抗菌劑、難燃劑、難燃助劑、交聯劑、交聯助劑、發泡劑、發泡助劑、無機填充劑、纖維強化材料等。 It is also possible to add other polymers or various additives to the resin composition for dicing film base materials within the range that does not impair the effects of the present invention. Examples of other polymers include polyamidoamines, polyurethanes, and ionic polymers of binary copolymers. Such other polymers can be formulated in a ratio of, for example, 20 parts by mass or less with respect to a total of 100 parts by mass of resin (A) and resin (B). As an example of additives, there can be cited: Antistatic agent, antioxidant, heat stabilizer, light stabilizer, ultraviolet absorber, pigment, dye, slip agent, anti-blocking agent, antistatic agent, mildew inhibitor, antibacterial agent, flame retardant, flame retardant aid , Crosslinking agent, crosslinking aid, foaming agent, foaming aid, inorganic filler, fiber reinforced materials, etc.

1-4.樹脂組成物之物性 1-4. Physical properties of resin composition

本發明之樹脂組成物之JIS K7206-1999所規定之菲卡軟化點未滿50℃,較佳為25℃以上且未滿50℃。若樹脂組成物之菲卡軟化點未滿50℃,則熱收縮率提高,若為25℃以上,則可將樹脂組成物加工成膜狀。 The resin composition of the present invention has a Fica softening point defined by JIS K7206-1999 of less than 50°C, preferably 25°C or more and less than 50°C. If the Fica softening point of the resin composition is less than 50°C, the thermal shrinkage rate increases, and if it is 25°C or higher, the resin composition can be processed into a film.

本發明之樹脂組成物於190℃、2160g負載下所測定之熔融流動速率(MFR)較佳為0.1g/10分鐘~50g/10分鐘,更佳為0.5g/10分鐘~20g/10分鐘。 The melt flow rate (MFR) of the resin composition of the present invention measured at 190°C under a load of 2160 g is preferably 0.1 g/10 minutes to 50 g/10 minutes, more preferably 0.5 g/10 minutes to 20 g/10 minutes.

再者,MFR係藉由依據JIS K7210-1999之方法於190℃、負載2160g下進行測定所得之值。 In addition, MFR is the value measured by the method according to JIS K7210-1999 at 190 degreeC and a load of 2160g.

樹脂組成物之中和度無特別限定,較佳為10%~85%,進而較佳為15%~82%。若樹脂組成物之中和度為10%以上,則可進一步提高晶片分割性,藉由為85%以下,膜之成形性優異。樹脂組成物之中和度基本上取決於離子聚合物(A)之中和度及其含量,可藉由下述式進行計算。 The degree of neutralization of the resin composition is not particularly limited, but it is preferably 10% to 85%, and more preferably 15% to 82%. If the degree of neutralization of the resin composition is 10% or more, the wafer splittability can be further improved, and if it is 85% or less, the moldability of the film is excellent. The degree of neutralization of the resin composition basically depends on the degree of neutralization of the ionic polymer (A) and its content, and can be calculated by the following formula.

(樹脂組成物之中和度)=(離子聚合物(A)之中和度)×(樹脂組成物中之離子聚合物(A)之比例) (Neutralization degree of resin composition) = (neutralization degree of ionic polymer (A)) × (ratio of ionic polymer (A) in resin composition)

因此,於離子聚合物(A)之中和度較低之情形時,使其含量略多,或於離子聚合物(A)之中和度較高之情形時,使其含量略少, 藉此可調整樹脂組成物之中和度。 Therefore, when the degree of neutralization of the ionic polymer (A) is low, its content is slightly higher, or when the degree of neutralization of the ionic polymer (A) is high, its content is slightly smaller, This can adjust the degree of neutralization of the resin composition.

進而,本發明之樹脂組成物於加工成厚度100μm之膜時於80℃下之熱收縮率較佳為6%以上,更佳為7%以上。若於80℃下之熱收縮率為6%以上,則可較佳地用於製造能夠藉由熱收縮步驟消除鬆弛之切割膜。熱收縮率之上限無特別限定,就熱收縮後之後續步驟(拾取步驟)中之不良率降低之觀點而言,較佳為20%以下。 Furthermore, when the resin composition of the present invention is processed into a film having a thickness of 100 μm, the heat shrinkage rate at 80° C. is preferably 6% or more, and more preferably 7% or more. If the heat shrinkage rate at 80° C. is 6% or more, it can be preferably used to produce a dicing film capable of eliminating slack through the heat shrinking step. The upper limit of the heat shrinkage rate is not particularly limited, and it is preferably 20% or less from the viewpoint of a decrease in the defect rate in the subsequent step (pickup step) after heat shrinkage.

再者,於本案中,於80℃下之熱收縮率係藉由以下方法進行測定所得之值。 In addition, in this case, the heat shrinkage rate at 80 degreeC is the value measured by the following method.

將樹脂組成物膜切斷成厚度100μm、寬度方向25mm×長度方向150mm,標記出間隔100mm之標線,而作為試片樣品。將其放置於撒有澱粉之玻璃板之上,於80℃之加熱板上加熱2分鐘,測定膜上之標線於加熱後之間隔,根據以下之式計算收縮率(%)。 The resin composition film was cut into a thickness of 100 μm, a width of 25 mm×a length of 150 mm, and a reticle with an interval of 100 mm was marked as a test piece sample. Place it on a glass plate sprinkled with starch and heat it on a hot plate at 80°C for 2 minutes. Measure the interval between the marks on the film after heating and calculate the shrinkage (%) according to the following formula.

收縮率(%)=100mm-收縮後之標線之間隔距離(mm)/100mm×100 Shrinkage (%)=100mm- the distance between the marked lines after shrinkage (mm)/100mm×100

1-5.樹脂組成物之製造方法 1-5. Manufacturing method of resin composition

切割膜基材用樹脂組成物可藉由將樹脂(A)及樹脂(B)、進而視需要之其他聚合體或添加劑等加以混合而獲得。如上所述,由於本發明之樹脂組成物之JIS K7206-1999所規定之菲卡軟化點未滿50℃,故而以樹脂組成物之菲卡軟化點未滿50℃之方式,選擇樹脂(A)、樹脂(B)及根據所需之添加劑之種類或量。 The resin composition for a dicing film base material can be obtained by mixing the resin (A) and the resin (B), and further other polymers or additives as needed. As described above, since the Fika softening point specified in JIS K7206-1999 of the resin composition of the present invention is less than 50°C, the resin (A) is selected in such a way that the Fika softening point of the resin composition is less than 50°C. , Resin (B) and the type or amount of additives required.

樹脂組成物之製造方法無特別限定,例如可藉由將所有成分乾摻後進行熔融混練而獲得。 The production method of the resin composition is not particularly limited, and for example, it can be obtained by dry-blending all the components and melt-kneading.

2.切割膜基材 2. Cutting film substrate

本發明之第2樣態係含有至少一層包含上述切割膜基材用樹脂組成物之層之切割膜基材。圖1A及1B係表示本發明之切割膜基材10之一實施形態之剖面圖。圖1A係僅含有包含上述切割膜基材用樹脂組成物之第1樹脂層1之單層切割膜基材,圖1B係由包含上述切割膜基材用樹脂組成物之第1樹脂層1、與包含其他樹脂或樹脂組成物之第2樹脂層2積層所得之多層切割膜基材。 The second aspect of the present invention is a dicing film base material that contains at least one layer containing the resin composition for a dicing film base material. 1A and 1B are cross-sectional views showing an embodiment of the dicing film substrate 10 of the present invention. FIG. 1A is a single-layer dicing film substrate containing only the first resin layer 1 containing the above-mentioned resin composition for dicing film substrates, and FIG. 1B is a first resin layer 1 containing the resin composition for dicing film substrates above. The multilayer dicing film base material laminated with the second resin layer 2 containing other resin or resin composition.

本發明之切割膜基材之強度較佳為25%模數為5MPa以上且15MPa以下之範圍,更佳為6MPa以上且12MPa以下。若25%模數為5MPa以上,則作為切割膜基材之晶片分割性(強度)優異,若為15MPa以下,則擴張性優異。 The strength of the dicing film substrate of the present invention is preferably within a range of 25% modulus of 5 MPa or more and 15 MPa or less, and more preferably 6 MPa or more and 12 MPa or less. If the 25% modulus is 5 MPa or more, the wafer splitting property (strength) as the dicing film base is excellent, and if it is 15 MPa or less, the expandability is excellent.

本發明中之模數係依據JIS K 7127-1999,對於切割膜基材之機械軸方向(MD方向,Machine Direction)及正交方向(TD方向,Transverse Direction),於試驗速度:500mm/min、試片:寬10mm×長200mm、夾具間隔:100mm之條件下,作為伸長距離25%或50%時之膜強度(25%模數或50%模數)進行測定所得之值。 The modulus in the present invention is based on JIS K 7127-1999. For the mechanical axis direction (MD direction, Machine Direction) and orthogonal direction (TD direction, Transverse Direction) of the cutting film substrate, the test speed is 500 mm/min, Test piece: width 10 mm × length 200 mm, fixture interval: 100 mm, measured as the film strength (25% modulus or 50% modulus) at an elongation distance of 25% or 50%.

本發明之切割膜基材於80℃下之熱收縮率較佳為6%以上且20%以下之範圍,更佳為7%以上。若於80℃下之熱收縮率為6%以上,則作為切割膜基材之熱收縮特性(鬆弛之消除)優異,若為20%以下,則熱收縮後之後續步驟(拾取步驟)中之不良率降低優異。 The heat shrinkage rate of the dicing film substrate of the present invention at 80°C is preferably in the range of 6% or more and 20% or less, and more preferably 7% or more. If the heat shrinkage rate at 80°C is 6% or more, the heat shrinkage characteristics (elimination of slack) of the dicing film substrate is excellent, and if it is 20% or less, the following steps (pickup step) after heat shrinkage The defect rate is excellent.

再者,於本案中,於80℃下之熱收縮率係藉由以下方法進行測定所得之值。 In addition, in this case, the heat shrinkage rate at 80 degreeC is the value measured by the following method.

將切割膜基材切斷成厚度100μm、寬度方向25mm×長度方向 150mm,標記出間隔100mm之標線,而作為試片樣品。將其放置於撒有澱粉之玻璃板之上,於80℃之加熱板上加熱2分鐘,測定膜上之標線於加熱後之間隔,根據以下之式計算收縮率(%)。 The dicing film base material was cut into a thickness of 100 μm, a width direction of 25 mm × a length direction 150mm, marking lines with intervals of 100mm are marked as test piece samples. Place it on a glass plate sprinkled with starch and heat it on a hot plate at 80°C for 2 minutes. Measure the interval between the marks on the film after heating and calculate the shrinkage (%) according to the following formula.

收縮率(%)=100mm-收縮後之標線之間隔距離(mm)/100mm×100 Shrinkage (%)=100mm- the distance between the marked lines after shrinkage (mm)/100mm×100

2-1.第1樹脂層 2-1. The first resin layer

第1樹脂層係包含上述切割膜基材用樹脂組成物,即,含有乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下及乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份)、且JIS K7206-1999所規定之菲卡軟化點未滿50℃的切割膜基材用樹脂組成物之層。又,第1樹脂層亦可為由上述切割膜基材用樹脂組成物構成之層。此種樹脂組成物層之強度與熱收縮率之平衡性優異。 The first resin layer contains the above-mentioned resin composition for a dicing film base material, that is, an ionic polymer (A) containing an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer of 30 parts by mass or more and 90 parts by mass or less and Ethylene-based copolymer (B) 10 parts by mass or more and 70 parts by mass or less (where the total of component (A) and component (B) is 100 parts by mass), and the Fika softening point specified in JIS K7206-1999 The layer of the resin composition for dicing film substrates below 50°C. In addition, the first resin layer may be a layer composed of the resin composition for a dicing film base. Such a resin composition layer has an excellent balance between the strength and the heat shrinkage rate.

於切割膜基材為單層構成之情形時,較佳為成為原料之樹脂組成物中之離子聚合物(A)之含量為70質量份以上且90質量份以下、乙烯系共聚合體(B)之含量為10質量份以上且30質量份以下,更佳為離子聚合物(A)之含量為80質量份以上且90質量份以下、乙烯系共聚合體(B)之含量為10質量份以上且20質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份)。如此,藉由使用離子聚合物(A)之比率較高之樹脂組成物,即便為單層,亦可達成作為切割膜基材所需之強度。 When the dicing film base material has a single-layer structure, it is preferable that the content of the ionic polymer (A) in the resin composition as the raw material is 70 parts by mass or more and 90 parts by mass or less, and the ethylene-based copolymer (B) The content is 10 parts by mass or more and 30 parts by mass or less, more preferably the content of the ionic polymer (A) is 80 parts by mass or more and 90 parts by mass or less, and the content of the ethylene-based copolymer (B) is 10 parts by mass or more and 20 parts by mass or less (wherein the total of component (A) and component (B) is set to 100 parts by mass). In this way, by using a resin composition having a high ratio of ionic polymer (A), even if it is a single layer, the strength required as a dicing film substrate can be achieved.

另一方面,於切割膜基材為多層構成之情形時,成為第1樹脂層之原料之樹脂組成物只要為上述本發明之樹脂組成物, 則離子聚合物(A)與共聚合體(B)之比率無特別限定,只要離子聚合物(A)之含量為30質量份以上且90質量份以下、乙烯系共聚合體(B)之含量為10質量份以上且70質量份以下即可。 On the other hand, when the dicing film base material has a multi-layer structure, the resin composition that becomes the raw material of the first resin layer may be the resin composition of the present invention, The ratio of the ionic polymer (A) to the copolymer (B) is not particularly limited, as long as the content of the ionic polymer (A) is 30 parts by mass or more and 90 parts by mass or less, and the content of the ethylene-based copolymer (B) is 10 It is sufficient if it is more than 70 parts by mass.

2-2.第2樹脂層 2-2. Second resin layer

第2樹脂層係包含樹脂(C)之層或由樹脂(C)構成之層,樹脂(C)只要為與構成第1樹脂層之樹脂組成物之接著性較高之樹脂,則無特別限定。藉由將包含樹脂(C)(或由樹脂(C)構成)之第2樹脂層與第1樹脂層積層,能夠於不產生層間剝離之問題之情況下,提高切割膜基材之強度,且維持切割膜所需之晶片分割性與擴張性之平衡。 The second resin layer is a layer containing a resin (C) or a layer composed of a resin (C), and the resin (C) is not particularly limited as long as it has a high adhesiveness with the resin composition constituting the first resin layer . By laminating the second resin layer containing the resin (C) (or consisting of the resin (C)) and the first resin layer, the strength of the dicing film base material can be improved without causing the problem of delamination between layers, and Maintain the balance between the dividability and dilatability of wafers required for dicing films.

<樹脂C> <Resin C>

本發明中之樹脂(C)較佳為自乙烯-不飽和羧酸系共聚合體(以下,亦簡稱為「共聚合體(C)」)及上述乙烯-不飽和羧酸系共聚合體之離子聚合物(以下,亦簡稱為「離子聚合物(C)」)所組成之群組選擇之至少1種。作為樹脂(C)所使用之乙烯-不飽和羧酸系共聚合體之離子聚合物係上述乙烯-不飽和羧酸系共聚合體之羧基之一部分或全部經金屬(離子)中和所得者。 The resin (C) in the present invention is preferably an ionic polymer from an ethylene-unsaturated carboxylic acid copolymer (hereinafter, also simply referred to as "copolymer (C)") and the above ethylene-unsaturated carboxylic acid copolymer (Hereinafter, also simply referred to as "ionic polymer (C)") At least one selected from the group consisting of. The ionic polymer of the ethylene-unsaturated carboxylic acid copolymer used as the resin (C) is obtained by neutralizing a part (or all) of the carboxyl groups of the above ethylene-unsaturated carboxylic acid copolymer.

再者,如下述詳細說明般,樹脂(C)亦可為與構成第1樹脂層之樹脂組成物中所含之樹脂(A)或樹脂(B)同樣之樹脂。 In addition, as described below in detail, the resin (C) may be the same resin as the resin (A) or the resin (B) contained in the resin composition constituting the first resin layer.

上述共聚合體(C)、或構成其離子聚合物(C)之乙烯-不飽和羧酸系共聚合體係使乙烯與不飽和羧酸共聚而成之至少二元之共聚合體,亦可為進而與第3共聚合成分共聚而成之三元以上 之多元共聚合體。再者,可單獨使用一種乙烯-不飽和羧酸系共聚合體,亦可併用兩種以上之乙烯-不飽和羧酸系共聚合體。 The above-mentioned copolymer (C), or the ethylene-unsaturated carboxylic acid-based copolymerization system constituting the ionic polymer (C) is a copolymer of at least a binary copolymer formed by copolymerizing ethylene and an unsaturated carboxylic acid. The third copolymerization component is formed by copolymerization of ternary or more Of multiple copolymers. Furthermore, one kind of ethylene-unsaturated carboxylic acid-based copolymer may be used alone, or two or more kinds of ethylene-unsaturated carboxylic acid-based copolymers may be used in combination.

作為構成乙烯-不飽和羧酸二元共聚合體之不飽和羧酸,例如可列舉:丙烯酸、甲基丙烯酸、乙基丙烯酸、伊康酸、伊康酸酐、反丁烯二酸、丁烯酸、順丁烯二酸、順丁烯二酸酐等碳數4~8之不飽和羧酸等。特佳為丙烯酸或甲基丙烯酸。 Examples of the unsaturated carboxylic acid constituting the ethylene-unsaturated carboxylic acid binary copolymer include acrylic acid, methacrylic acid, ethyl acrylic acid, itaconic acid, itaconic anhydride, fumaric acid, butenoic acid, Maleic acid, maleic anhydride and other unsaturated carboxylic acids with 4-8 carbon atoms. Particularly preferred is acrylic acid or methacrylic acid.

於乙烯-不飽和羧酸系共聚合體(C)為三元以上之多元共聚合體時,亦可包含形成多元共聚合體之單體(第3共聚合成分)。作為第3共聚合成分,可列舉:不飽和羧酸酯(例如,丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丁酯、丙烯酸正丁酯、丙烯酸異辛酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丁酯、順丁烯二酸二甲酯、順丁烯二酸二乙酯等(甲基)丙烯酸烷基酯)、不飽和烴(例如,丙烯、丁烯、1,3-丁二烯、戊烯、1,3-戊二烯、1-己烯等)、乙烯酯(例如,乙酸乙烯酯、丙酸乙烯酯等)、乙烯基硫酸或乙烯基硝酸等之氧化物、鹵素化合物(例如,氯乙烯、氟乙烯等)、含乙烯基之一級/二級胺化合物、一氧化碳、二氧化硫等,作為該等共聚合成分,較佳為不飽和羧酸酯。 When the ethylene-unsaturated carboxylic acid-based copolymer (C) is a ternary or more multi-component copolymer, a monomer (third copolymerization component) that forms a multi-component copolymer may be included. Examples of the third copolymerization component include unsaturated carboxylic acid esters (for example, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, and methacrylic acid) Ethyl ester, isobutyl methacrylate, dimethyl maleate, diethyl maleate and other (meth)acrylic acid alkyl esters), unsaturated hydrocarbons (for example, propylene, butene, 1 , 3-butadiene, pentene, 1,3-pentadiene, 1-hexene, etc.), vinyl esters (for example, vinyl acetate, vinyl propionate, etc.), vinyl sulfuric acid or vinyl nitric acid, etc. Oxides, halogen compounds (for example, vinyl chloride, vinyl fluoride, etc.), vinyl-containing primary/secondary amine compounds, carbon monoxide, sulfur dioxide, etc., as these copolymerization components, unsaturated carboxylic acid esters are preferred.

例如,於乙烯-不飽和羧酸系共聚合體(C)為三元共聚合體之情形時,可較佳地列舉:乙烯與不飽和羧酸與不飽和羧酸酯之三元共聚合體、乙烯與不飽和羧酸與不飽和烴之三元共聚合體等。 For example, in the case where the ethylene-unsaturated carboxylic acid-based copolymer (C) is a ternary copolymer, it can be preferably exemplified by the ternary copolymer of ethylene and unsaturated carboxylic acid and unsaturated carboxylic acid ester, ethylene and Ternary copolymer of unsaturated carboxylic acid and unsaturated hydrocarbon, etc.

作為不飽和羧酸酯,較佳為不飽和羧酸烷基酯,烷基酯之烷基部位之碳數較佳為1~12,更佳為1~8,進而較佳為1~4。作為烷基部位之例,可列舉:甲基、乙基、正丙基、異丙基、 正丁基、異丁基、第二丁基、2-乙基己基、異辛基等。 The unsaturated carboxylic acid ester is preferably an unsaturated carboxylic acid alkyl ester, and the carbon number of the alkyl portion of the alkyl ester is preferably 1-12, more preferably 1-8, and still more preferably 1-4. Examples of alkyl sites include methyl, ethyl, n-propyl, isopropyl, N-butyl, isobutyl, second butyl, 2-ethylhexyl, isooctyl, etc.

作為不飽和羧酸酯之具體例,可列舉:烷基部位之碳數為1~12之不飽和羧酸烷基酯(例如,丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丁酯、丙烯酸正丁酯、丙烯酸異辛酯等丙烯酸烷基酯,甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丁酯等甲基丙烯酸烷基酯,順丁烯二酸二甲酯、順丁烯二酸二乙酯等順丁烯二酸烷基酯)等。 Specific examples of unsaturated carboxylic acid esters include: unsaturated carboxylic acid alkyl esters having 1 to 12 carbon atoms in the alkyl portion (eg, methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate) Alkyl acrylates such as esters, isooctyl acrylate, alkyl methacrylates such as methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, dimethyl maleate, maleate Diethyl diacid and other maleic acid alkyl esters) and so on.

於不飽和羧酸烷基酯之中,更佳為烷基部位之碳數為1~4之(甲基)丙烯酸烷基酯。 Among the unsaturated carboxylic acid alkyl esters, the (meth)acrylic acid alkyl esters having 1 to 4 carbon atoms in the alkyl portion are more preferable.

共聚合體之形態可為嵌段共聚合體、無規共聚合體、接枝共聚合體中之任意者,亦可為二元共聚合體、三元以上之多元共聚合體中之任意者。其中,就可工業獲取之方面而言,較佳為二元無規共聚合體、三元無規共聚合體、二元無規共聚合體之接枝共聚合體或三元無規共聚合體之接枝共聚合體,更佳為二元無規共聚合體或三元無規共聚合體。 The form of the copolymer may be any of a block copolymer, a random copolymer, and a graft copolymer, and may also be any of a binary copolymer or a multi-component copolymer of three or more. Among them, in terms of industrial availability, it is preferably a binary random copolymer, a ternary random copolymer, a graft copolymer of a binary random copolymer, or a graft copolymer of a ternary random copolymer The combination is more preferably a binary random copolymer or a ternary random copolymer.

作為乙烯-不飽和羧酸系共聚合體之具體例,可列舉:乙烯-丙烯酸共聚合體、乙烯-甲基丙烯酸共聚合體等二元共聚合體、乙烯-甲基丙烯酸-丙烯酸異丁酯共聚合體等三元共聚合體。又,亦可使用作為乙烯-不飽和羧酸系共聚合體上市之市售品,例如可使用Dow-Mitsui Polychemicals公司製造之Nucrel Series(註冊商標)等。 Specific examples of the ethylene-unsaturated carboxylic acid-based copolymer include three-component copolymers such as ethylene-acrylic acid copolymers and ethylene-methacrylic acid copolymers, and ethylene-methacrylic acid-isobutyl acrylate copolymers. Yuan copolymer. In addition, a commercially available product listed as an ethylene-unsaturated carboxylic acid-based copolymer can also be used, and for example, Nucrel Series (registered trademark) manufactured by Dow-Mitsui Polychemicals Co., Ltd. can be used.

乙烯-不飽和羧酸系共聚合體中之不飽和羧酸之共聚合比(質量比)較佳為4質量%~20質量%,更佳為5質量%~15質量%。乙烯-不飽和羧酸系共聚合體中之不飽和羧酸酯之共聚合比 (質量比)較佳為1質量%~20質量%,更佳為5質量%~18質量%。就擴張性之觀點而言,來自不飽和羧酸酯之構成單位之含有比率較佳為1質量%以上,較佳為5質量%以上。又,就防止黏連及融合之觀點而言,來自不飽和羧酸酯之構成單位之含有比率較佳為20質量%以下,更佳為18質量%以下。 The copolymerization ratio (mass ratio) of the unsaturated carboxylic acid in the ethylene-unsaturated carboxylic acid-based copolymer is preferably 4% by mass to 20% by mass, and more preferably 5% by mass to 15% by mass. Copolymerization ratio of unsaturated carboxylic acid ester in ethylene-unsaturated carboxylic acid copolymer (Mass ratio) is preferably 1% by mass to 20% by mass, and more preferably 5% by mass to 18% by mass. From the viewpoint of expandability, the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is preferably 1% by mass or more, and preferably 5% by mass or more. In addition, from the viewpoint of preventing blocking and fusion, the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is preferably 20% by mass or less, and more preferably 18% by mass or less.

於本發明中,作為樹脂(C)所使用之離子聚合物(C)較佳為上述乙烯-不飽和羧酸系共聚合體中所含之羧基經金屬離子以任意比例交聯(中和)所得者。作為酸基之中和所使用之金屬離子,可列舉:鋰離子、鈉離子、鉀離子、銣離子、銫離子、鋅離子、鎂離子、錳離子等金屬離子。該等金屬離子之中,就工業化製品之易獲取性而言,較佳為鎂離子、鈉離子及鋅離子,更佳為鈉離子及鋅離子,特佳為鋅離子。 In the present invention, the ionic polymer (C) used as the resin (C) is preferably obtained by crosslinking (neutralizing) the carboxyl group contained in the above ethylene-unsaturated carboxylic acid-based copolymer via metal ions at an arbitrary ratio By. Examples of the metal ion used in the neutralization of the acid group include metal ions such as lithium ion, sodium ion, potassium ion, rubidium ion, cesium ion, zinc ion, magnesium ion, and manganese ion. Among these metal ions, in terms of the availability of industrial products, magnesium ions, sodium ions and zinc ions are preferred, sodium ions and zinc ions are more preferred, and zinc ions are particularly preferred.

金屬離子可單獨使用一種,或亦可併用兩種以上。 One metal ion may be used alone, or two or more may be used in combination.

離子聚合物(C)中之乙烯-不飽和羧酸系共聚合體之中和度較佳為10%~85%,進而較佳為15%~82%。若中和度為10%以上,則可進一步提高晶片分割性,藉由為85%以下,膜之加工性或成形性優異。 The degree of neutralization of the ethylene-unsaturated carboxylic acid copolymer in the ionic polymer (C) is preferably 10% to 85%, and more preferably 15% to 82%. If the degree of neutralization is 10% or more, the wafer splittability can be further improved, and if it is 85% or less, the film has excellent processability or moldability.

再者,中和度係經金屬離子中和之羧基相對於乙烯-不飽和羧酸系共聚合體中所含之全部羧基之莫耳數之比例(莫耳%)。 In addition, the degree of neutralization is the ratio (mol %) of the number of carboxyl groups neutralized with metal ions to the total number of carboxyl groups contained in the ethylene-unsaturated carboxylic acid copolymer.

樹脂(C)之熔融流動速率(MFR)較佳為0.2g/10分鐘~20.0g/10分鐘之範圍,更佳為0.5g/10分鐘~20.0g/10分鐘,進而較佳為0.5g/10分鐘~18.0g/10分鐘。若熔融流動速率為上述範圍內,則於膜成形時有利。 The melt flow rate (MFR) of the resin (C) is preferably in the range of 0.2 g/10 minutes to 20.0 g/10 minutes, more preferably 0.5 g/10 minutes to 20.0 g/10 minutes, and still more preferably 0.5 g/ 10 minutes~18.0g/10 minutes. If the melt flow rate is within the above range, it is advantageous when the film is formed.

再者,MFR係藉由依據JIS K7210-1999之方法於190℃、負載 2160g下進行測定所得之值。 Furthermore, MFR is loaded at 190°C by a method according to JIS K7210-1999 The value measured at 2160g.

樹脂(C)較佳為菲卡軟化點為50℃以上且100℃以下。藉由在包含菲卡軟化點未滿50℃之樹脂組成物之第1樹脂層積層菲卡軟化點較高之樹脂作為第2樹脂層,可提高切割膜基材之強度或耐熱性。 The resin (C) preferably has a Fica softening point of 50°C or higher and 100°C or lower. By laminating a resin with a higher Fica softening point as the second resin layer in the first resin layer containing a resin composition with a Fika softening point of less than 50°C, the strength or heat resistance of the dicing film substrate can be improved.

再者,菲卡軟化點係依據JIS K7206-1999所規定之A50法進行測定所得之值。 In addition, the Fika softening point is a value measured according to the A50 method specified in JIS K7206-1999.

<其他聚合體及添加劑> <Other polymers and additives>

亦可於構成第2樹脂層之樹脂(C)中在無損本發明之效果之範圍內視需要添加各種添加劑或其他樹脂。作為上述添加劑之一例,可列舉:抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、顏料、染料、滑劑、抗黏連劑、抗靜電劑、防黴劑、抗菌劑、難燃劑、難燃助劑、交聯劑、交聯助劑、發泡劑、發泡助劑、無機填充劑、纖維強化材等。就防止熱融合之觀點而言,亦可少量添加上述添加劑。 Various resins or other resins may be added as necessary to the resin (C) constituting the second resin layer as long as the effect of the present invention is not impaired. Examples of the above-mentioned additives include antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, pigments, dyes, slip agents, anti-blocking agents, antistatic agents, mildew inhibitors, antibacterial agents, and flame retardants. , Flame retardant additives, crosslinking agents, crosslinking additives, foaming agents, foaming additives, inorganic fillers, fiber reinforced materials, etc. From the viewpoint of preventing thermal fusion, the aforementioned additives may be added in small amounts.

2-3.層構成 2-3. Layer composition

本發明之切割膜基材存在僅包含上述第1樹脂層1之單層構成者(圖1A)、以及包含上述第1樹脂層1及上述第2樹脂層2之多層構成者(圖1B)。多層構成之切割膜基材只要包含上述兩層,則其層構成無特別限定,就防止層間剝離之觀點而言,較理想為第1樹脂層與第2樹脂層直接積層。 The dicing film base material of the present invention includes a single-layer structure including the first resin layer 1 (FIG. 1A) and a multi-layer structure including the first resin layer 1 and the second resin layer 2 (FIG. 1B ). As long as the dicing film base material having a multi-layer structure includes the above two layers, the layer structure is not particularly limited. From the viewpoint of preventing delamination between layers, it is preferable that the first resin layer and the second resin layer are directly laminated.

多層構成之切割膜基材亦可為成為3層以上之多層構成。例如,可為於積層數層使用構成第1樹脂層之樹脂組成物所 成形之片材後設置第2樹脂層之構成,亦可為由兩層第1樹脂層夾持第2樹脂層之構成。又,亦可為不僅有第1樹脂層與第2樹脂層、且積層有其他樹脂層之構成。 The dicing film base material of a multilayer structure may be a multilayer structure of 3 layers or more. For example, the resin composition that constitutes the first resin layer can be used in several layers The second resin layer may be provided after the formed sheet is formed, and the second resin layer may be sandwiched between two first resin layers. In addition, it may have a configuration in which not only the first resin layer and the second resin layer but also other resin layers are laminated.

作為構成與本發明之切割膜基材積層之其他樹脂層的樹脂之代表例,可列舉:選自直鏈狀低密度聚乙烯(LLDPE)、低密度聚乙烯(LDPE)、乙烯-α-烯烴共聚合體、聚丙烯、及乙烯-乙烯酯共聚合體中之單體或包含任意數種之摻合物。 Representative examples of the resin constituting the other resin layer laminated with the dicing film base material of the present invention include: selected from linear low density polyethylene (LLDPE), low density polyethylene (LDPE), and ethylene-α-olefin The monomer in the interpolymer, polypropylene, and ethylene-vinyl ester copolymer may contain any number of blends.

又,積層之其他樹脂層可為功能性層(例如,黏著片材等),亦可為聚烯烴膜(或片材)、聚氯乙烯膜(或片材)等基材。上述基材可為具有單層或多層之任意構造者。於本發明中,包括該等基材在內稱為「切割膜基材」。 In addition, the other resin layer to be laminated may be a functional layer (for example, an adhesive sheet, etc.), or may be a base material such as a polyolefin film (or sheet), a polyvinyl chloride film (or sheet), or the like. The above-mentioned substrate can be any structure having a single layer or multiple layers. In the present invention, these substrates are referred to as "cutting film substrates".

亦可對切割膜基材表面實施例如電暈放電處理等公知之表面處理,以提高切割膜基材表面之接著力。 The surface of the dicing film substrate may also be subjected to known surface treatments such as corona discharge treatment to improve the adhesion of the dicing film substrate surface.

又,就提高耐熱性之觀點而言,亦可對第1樹脂層、第2樹脂層或其他樹脂層、或者切割膜基材視需要進行電子束照射。 In addition, from the viewpoint of improving heat resistance, the first resin layer, the second resin layer or other resin layers, or the dicing film base material may be subjected to electron beam irradiation as necessary.

2-4.切割膜基材之製造方法 2-4. Manufacturing method of cutting film substrate

作為單層之切割膜基材之製造方法,可列舉:藉由公知方法將切割膜用樹脂組成物加工成膜狀之方法。將樹脂組成物加工成膜狀之方法無特別限定,例如可藉由習知公知之T字壓鑄成形法、T字壓軋成形法、吹脹成形法、擠出層壓法、壓延成形法等各種成形方法製造膜。 As a method of manufacturing a single-layer dicing film base material, a method of processing the resin composition for dicing film into a film shape by a known method can be mentioned. The method of processing the resin composition into a film shape is not particularly limited, and for example, the conventionally known T-shaped die casting molding method, T-shaped roll molding method, inflation molding method, extrusion lamination method, calender molding method, etc. Various forming methods produce films.

作為多層切割膜基材之製造方法,可列舉:將構成第1樹脂層之樹脂組成物及構成第2樹脂層之樹脂(C)分別藉由公知之 方法加工成膜狀,並進行積層之方法。將樹脂組成物或樹脂加工成膜狀之方法無特別限定,例如可藉由習知公知之T字壓鑄成形法、T字壓軋成形法、吹脹成形法、擠出層壓法、壓延成形法等各種成形方法製造膜。 As a method of manufacturing the multilayer dicing film base material, the resin composition constituting the first resin layer and the resin (C) constituting the second resin layer are each known by The method is processed into a film, and the method of lamination. The method of processing the resin composition or the resin into a film is not particularly limited, and for example, it may be a conventionally known T-shaped die casting method, T-shaped roll forming method, inflation forming method, extrusion lamination method, and calendering Various forming methods such as methods are used to produce films.

又,多層之切割膜基材可藉由對構成第1樹脂層之樹脂組成物、及構成第2樹脂層之樹脂(C)進行例如共擠出層壓而製造。 Moreover, the multilayer dicing film base material can be manufactured by, for example, co-extrusion lamination of the resin composition constituting the first resin layer and the resin (C) constituting the second resin layer.

例如,於藉由T字模膜成形機或擠出塗佈成形機等將構成第1樹脂層之樹脂組成物積層於成為第2樹脂層之樹脂(C)之膜之表面之情形時,為了提高與第2樹脂層之接著性,可藉由共擠出塗佈成形機經由接著性樹脂層而形成。關於此種接著性樹脂,作為代表例,可列舉選自上述各種乙烯共聚合體、或該等之不飽和羧酸接枝物中之單體或包含任意數種之摻合物。 For example, when the resin composition constituting the first resin layer is laminated on the surface of the resin (C) film that becomes the second resin layer with a T-shaped film forming machine or an extrusion coating forming machine, in order to improve The adhesiveness with the second resin layer can be formed through the adhesive resin layer by a co-extrusion coating molding machine. Regarding such an adhesive resin, as a representative example, a monomer selected from the above-mentioned various ethylene copolymers, or unsaturated carboxylic acid grafts thereof, or a blend containing any number of them may be mentioned.

又,作為本發明之切割膜基材之成形例,可列舉如下方法,即,使用T字模膜成形機或擠出塗佈成形機,藉由使構成第1樹脂層之樹脂組成物熱接著於成為第2樹脂層之樹脂(C)之膜之表面而形成多層體。 In addition, as a forming example of the dicing film base material of the present invention, a method of using a T-shaped film forming machine or an extrusion coating forming machine to heat bond the resin composition constituting the first resin layer to A multilayer body is formed on the surface of the resin (C) film that becomes the second resin layer.

再者,雖記載的是在成為第2樹脂層之樹脂(C)之膜上形成包含成為第1樹脂層之樹脂組成物之層之方法,但亦可與之相反地,藉由在成為第1樹脂層之樹脂組成物之膜上由成為第2樹脂層之樹脂(C)形成層,或於其他樹脂層之上設置第1樹脂或第2樹脂層之方法而製造本發明之切割膜基材。 In addition, although the method of forming a layer containing the resin composition as the first resin layer on the film of the resin (C) as the second resin layer is described, in contrast to this, 1 The film of the resin composition of the resin layer is formed of a resin (C) which becomes the second resin layer, or a method of providing the first resin or the second resin layer on another resin layer to produce the dicing film base of the present invention material.

切割膜基材之厚度無特別限定,若考慮用作切割膜之構成部件,則就切割時之框架保持之觀點而言,較佳為65μm以上, 就擴張性之觀點而言,較佳為200μm以下。又,構成多層之切割膜基材之各樹脂層之厚度只要其等之合計不超過切割膜基材之上述厚度則無特別限定,較佳為第1樹脂層、第2樹脂層均為30μm以上且100μm以下,第1樹脂層與第2樹脂層之厚度之比較佳為30/70~70/30。 The thickness of the dicing film base material is not particularly limited, and if it is considered as a constituent member of the dicing film, it is preferably 65 μm or more from the viewpoint of holding the frame during dicing. From the viewpoint of expandability, it is preferably 200 μm or less. In addition, the thickness of each resin layer constituting the multi-layer dicing film base material is not particularly limited as long as the total of these does not exceed the above-mentioned thickness of the dicing film base material, and it is preferable that both the first resin layer and the second resin layer are 30 μm or more Moreover, the thickness of the first resin layer and the second resin layer is preferably 30/70 to 70/30 when the thickness is 100 μm or less.

3.切割膜 3. Cutting film

本發明之第3樣態係具備上述本發明之切割膜基材、及積層於其至少一面之黏著層之切割膜。圖2A及圖2B係表示本發明之切割膜20之一實施形態之剖面圖。圖2A所示之切割膜20具有僅包含第1樹脂層1之切割膜基材10、及設置於其表面之黏著層11,圖2B所示之切割膜20具有包含第1樹脂層1及第2樹脂層2之切割膜基材10、及設置於其表面之黏著層11。 The third aspect of the present invention is a dicing film provided with the above-mentioned dicing film base material of the present invention and an adhesive layer laminated on at least one side thereof. 2A and 2B are cross-sectional views showing an embodiment of the dicing film 20 of the present invention. The dicing film 20 shown in FIG. 2A has a dicing film base material 10 including only the first resin layer 1 and an adhesive layer 11 provided on the surface thereof. The dicing film 20 shown in FIG. 2B has a first resin layer 1 and 2 The dicing film substrate 10 of the resin layer 2 and the adhesive layer 11 provided on the surface thereof.

切割膜較佳為於最表層形成有黏著層之構成。黏著層配置於切割膜基材之表面。可經由該黏著層將切割膜貼附於半導體晶圓,進行半導體晶圓之切割。再者,於圖2B中,將黏著層11配置於包含本發明之切割膜基材用樹脂組成物之第1樹脂層1之上,但本發明並不限定於此種構成。黏著層11亦可配置於第2樹脂層2(或其他樹脂層)之上。 The dicing film is preferably formed by forming an adhesive layer on the outermost layer. The adhesive layer is disposed on the surface of the cutting film substrate. The dicing film can be attached to the semiconductor wafer through the adhesive layer to cut the semiconductor wafer. In addition, in FIG. 2B, the adhesion layer 11 is arrange|positioned on the 1st resin layer 1 containing the resin composition for dicing film base materials of this invention, but this invention is not limited to this structure. The adhesive layer 11 may also be disposed on the second resin layer 2 (or other resin layer).

<黏著層> <adhesive layer>

本發明之切割膜係具備本發明之切割膜基材、及設置於切割膜基材之單面之黏著層者,於黏著層貼合固定成為切割加工之對象之半導體晶圓。黏著層之厚度亦取決於黏著劑之種類,較佳為3~100 μm,進而較佳為3~50μm。 The dicing film of the present invention is provided with the dicing film base material of the present invention and the adhesive layer provided on one side of the dicing film base material, and the semiconductor wafer that becomes the object of dicing processing is bonded and fixed on the adhesive layer. The thickness of the adhesive layer also depends on the type of adhesive, preferably 3~100 μm, more preferably 3 to 50 μm.

作為構成黏著層之黏著劑,可使用習知公知之黏著劑。黏著劑之例包括:橡膠系、丙烯酸系、聚矽氧系、聚乙烯醚系黏著劑;輻射硬化型黏著劑;加熱發泡型黏著劑等。其中,若考慮切割膜自半導體晶圓之剝離性等,則黏著層較佳為包含紫外線硬化型黏著劑。 As the adhesive constituting the adhesive layer, conventionally known adhesives can be used. Examples of adhesives include: rubber-based, acrylic-based, polysiloxane-based, and polyvinyl ether-based adhesives; radiation-curing adhesives; and heating-foaming adhesives. Among them, if the peelability of the dicing film from the semiconductor wafer is considered, the adhesive layer preferably contains an ultraviolet curing adhesive.

可構成黏著層之丙烯酸系黏著劑之例包括:(甲基)丙烯酸酯之均聚合體、及(甲基)丙烯酸酯與共聚合性單體之共聚合體。(甲基)丙烯酸酯之具體例包括:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸異壬酯等(甲基)丙烯酸烷基酯,(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丁酯、(甲基)丙烯酸羥基己酯等(甲基)丙烯酸羥基烷基酯,(甲基)丙烯酸環氧丙酯等。 Examples of the acrylic adhesive that can constitute the adhesive layer include: a homopolymer of (meth)acrylate and a copolymer of (meth)acrylate and a copolymerizable monomer. Specific examples of (meth)acrylates include: (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth ) Alkyl (meth)acrylate such as octyl acrylate, isononyl (meth)acrylate, hydroxyethyl (meth)acrylate, hydroxybutyl (meth)acrylate, hydroxyhexyl (meth)acrylate, etc. Hydroxyalkyl (meth)acrylate, glycidyl (meth)acrylate, etc.

與(甲基)丙烯酸酯之共聚合性單體之具體例包括:(甲基)丙烯酸、伊康酸、順丁烯二酸酐、(甲基)丙烯醯胺、(甲基)丙烯酸N-羥基甲基醯胺、(甲基)丙烯酸烷基胺基烷基酯(例如,甲基丙烯酸二甲基胺基乙酯、甲基丙烯酸第三丁基胺基乙酯等)、乙酸乙烯酯、苯乙烯、丙烯腈等。 Specific examples of copolymerizable monomers with (meth)acrylate include: (meth)acrylic acid, itaconic acid, maleic anhydride, (meth)acrylamide, (meth)acrylic acid N-hydroxyl Methylamide, alkylaminoalkyl (meth)acrylate (for example, dimethylaminoethyl methacrylate, tert-butylaminoethyl methacrylate, etc.), vinyl acetate, benzene Ethylene, acrylonitrile, etc.

可構成黏著層之紫外線硬化型黏著劑無特別限定,含有上述丙烯酸系黏著劑、紫外線硬化成分(能夠於丙烯酸系黏著劑之聚合物側鏈加成碳-碳雙鍵之成分)、及光聚合起始劑。進而,亦可於紫外線硬化型接著劑中視需要添加交聯劑、黏著賦予劑、填充劑、抗老化劑、著色劑等添加劑等。 The ultraviolet curing adhesive that can constitute the adhesive layer is not particularly limited, and contains the above acrylic adhesive, ultraviolet curing component (component capable of adding carbon-carbon double bond to the polymer side chain of the acrylic adhesive), and photopolymerization Starter. Furthermore, additives such as a crosslinking agent, an adhesion-imparting agent, a filler, an anti-aging agent, a coloring agent, and the like may be added to the ultraviolet curing adhesive as necessary.

紫外線硬化型黏著劑中所含之紫外線硬化成分係例 如於分子中具有碳-碳雙鍵,且能夠藉由自由基聚合而硬化之單體、低聚物或聚合物。紫外線硬化成分之具體例包括:三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、1,6-己二醇(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯等(甲基)丙烯酸與多元醇之酯或其低聚物;氰尿酸2-丙烯基二-3-丁烯基酯、異氰尿酸2-羥乙基雙(2-丙烯醯氧基乙基)酯、異氰尿酸三(2-丙烯醯氧基乙基)酯、異氰尿酸三(2-甲基丙烯醯氧基乙基)酯等異氰尿酸酯等。 Examples of ultraviolet curing components contained in ultraviolet curing adhesives Such as a monomer, oligomer or polymer that has a carbon-carbon double bond in the molecule and can be hardened by free radical polymerization. Specific examples of ultraviolet curing components include: trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol ( Methacrylates, neopentyl glycol di(meth)acrylates, dipentaerythritol hexa(meth)acrylates, etc. esters of (meth)acrylic acid and polyols or their oligomers; 2-propenyl cyanurate Di-3-butenyl ester, isocyanuric acid 2-hydroxyethyl bis(2-propenyloxyethyl) ester, isocyanuric acid tris (2-propenyloxyethyl) ester, isocyanuric acid tri (2-Methacryloyloxyethyl) ester and other isocyanurate and the like.

紫外線硬化型黏著劑中所含之光聚合起始劑之具體例包括:安息香甲醚、安息香異丙醚、安息香異丁醚等安息香烷基醚類,α-羥基環己基苯基酮等芳香族酮類,苯偶醯二甲基縮酮等芳香族縮酮類,聚乙烯二苯甲酮、氯9-氧硫

Figure 108128323-A0101-12-0028-10
、十二烷基9-氧硫
Figure 108128323-A0101-12-0028-11
、二甲基9-氧硫
Figure 108128323-A0101-12-0028-12
、二乙基9-氧硫
Figure 108128323-A0101-12-0028-13
等9-氧硫
Figure 108128323-A0101-12-0028-14
類等。 Specific examples of the photopolymerization initiator contained in the ultraviolet-curable adhesive include: benzoin alkyl ethers such as benzoin methyl ether, benzoin isopropyl ether, benzoin isobutyl ether, and aromatics such as α-hydroxycyclohexyl phenyl ketone Ketones, aromatic ketals such as benzoyl dimethyl ketal, polyvinyl benzophenone, chlorine 9-oxysulfide
Figure 108128323-A0101-12-0028-10
、Dodecyl 9-oxysulfur
Figure 108128323-A0101-12-0028-11
Dimethyl 9-oxysulfur
Figure 108128323-A0101-12-0028-12
, Diethyl 9-oxysulfur
Figure 108128323-A0101-12-0028-13
9-oxygen sulfur
Figure 108128323-A0101-12-0028-14
Class etc.

紫外線硬化型黏著劑中所含之交聯劑之例包括:聚異氰酸酯化合物、三聚氰胺樹脂、尿素樹脂、聚胺、含羧基之聚合物等。 Examples of the crosslinking agent contained in the ultraviolet curing adhesive include: polyisocyanate compounds, melamine resins, urea resins, polyamines, carboxyl group-containing polymers, and the like.

較佳為於本發明之切割膜之黏著層之表面貼附隔離膜。藉由貼附隔離膜,可保持黏著層之表面平滑。又,使半導體製造用膜之操作或搬運變得容易,且亦可於隔離膜上進行標記加工。 It is preferable to attach a separator to the surface of the adhesive layer of the dicing film of the present invention. By attaching a separator, the surface of the adhesive layer can be kept smooth. In addition, the operation or transportation of the film for semiconductor manufacturing is facilitated, and marking processing can also be performed on the separator.

隔離膜可為紙、或聚乙烯、聚丙烯、聚對苯二甲酸乙二酯等之合成樹脂膜等。又,亦可對隔離膜之與黏著層相接之面視需要實施聚矽氧處理或氟處理等脫模處理以提高自黏著層之剝離性。隔離膜之厚度通常為10~200μm左右,較佳為25~100μm左右。 The separator may be paper, or synthetic resin film of polyethylene, polypropylene, polyethylene terephthalate, etc. In addition, the surface of the isolation film that is in contact with the adhesive layer may be subjected to mold release treatment such as polysiloxane treatment or fluorine treatment as necessary to improve the peelability of the self-adhesive layer. The thickness of the separator is usually about 10 to 200 μm, preferably about 25 to 100 μm.

<切割膜之製造方法> <Manufacturing method of cutting film>

於製造本發明之切割膜時,可使用如下方法,即,使用公知之方法例如凹版輥式塗佈機、逆輥塗佈機、接觸輥塗佈機、浸漬輥塗機、棒式塗佈機、刮刀塗佈機、噴霧塗佈機等將黏著劑直接塗佈於切割膜基材之方法,或者藉由上述公知之方法將黏著劑塗佈於剝離片材上設置黏著層後,貼合於切割膜基材之表面層而轉印黏著層之方法等。 When manufacturing the dicing film of the present invention, the following method can be used, that is, a known method such as a gravure roll coater, reverse roll coater, touch roll coater, dip roll coater, bar coater can be used , Blade coater, spray coater and other methods to directly apply the adhesive to the cutting film substrate, or apply the adhesive to the release sheet by the above-mentioned known method and set the adhesive layer, then stick to The method of cutting the surface layer of the film substrate and transferring the adhesive layer.

又,藉由將本發明之樹脂組成物、及構成黏著層之材料共擠出(共擠出成形法),可獲得作為本發明之切割膜基材與黏著層之積層體之切割膜。進而藉由在所獲得之積層體之基材(第1樹脂層)側設置第2樹脂層,亦可製造具有包含第1樹脂層及第2樹脂層之切割膜基材之切割膜。 Further, by co-extrusion of the resin composition of the present invention and the material constituting the adhesive layer (co-extrusion molding method), a dicing film as a laminate of the dicing film base material and the adhesive layer of the present invention can be obtained. Furthermore, by providing a second resin layer on the base material (first resin layer) side of the obtained laminate, a dicing film having a dicing film base material including the first resin layer and the second resin layer can also be produced.

又,亦可對黏著劑組成物之層視需要實施加熱交聯而使之成為黏著層。 In addition, the layer of the adhesive composition may be heated and cross-linked as necessary to make it an adhesive layer.

進而,亦可於黏著層之表面上貼附隔離膜。 Furthermore, a separator may be attached to the surface of the adhesive layer.

[實施例] [Example]

其次,基於實施例詳細地說明本發明,但本發明並不限定於該等實施例。 Next, the present invention will be described in detail based on examples, but the present invention is not limited to these examples.

1.樹脂(A) 1. Resin (A)

作為樹脂(A),準備下述表1所記載之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體或乙烯-不飽和羧酸系共聚合體之鋅(Zn)離子中和離子聚合物(以下,稱為「離子聚合物」)。 As the resin (A), a zinc (Zn) ion-neutralizing ion polymer of ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer or ethylene-unsaturated carboxylic acid copolymer described in Table 1 below ( Hereinafter, referred to as "ionic polymer").

[表1]

Figure 108128323-A0101-12-0030-1
[Table 1]
Figure 108128323-A0101-12-0030-1

2.樹脂(B) 2. Resin (B)

作為樹脂(B),準備下述表2所示之乙烯系共聚合體。 As the resin (B), an ethylene-based copolymer shown in Table 2 below was prepared.

Figure 108128323-A0101-12-0030-2
Figure 108128323-A0101-12-0030-2

表1及表2之菲卡軟化溫度係依據JIS K7206-1999所規定之A50法進行測定所得之值。 The Fika softening temperatures in Tables 1 and 2 are measured according to the A50 method specified in JIS K7206-1999.

表2中之MFR(熔融流動速率)係依據JIS K7210-1999,於190℃、2160g負載下進行測定所得之值。 The MFR (melt flow rate) in Table 2 is the value measured according to JIS K7210-1999 at 190°C under a load of 2160 g.

表2中之熔點係藉由DSC法進行測定所得之值。 The melting point in Table 2 is the value measured by the DSC method.

3.樹脂(C) 3. Resin (C)

作為樹脂(C),準備離子聚合物1(IO-1)(與作為樹脂(A)所使用者相同)(參照上述表1)。 As the resin (C), an ionic polymer 1 (IO-1) (same as the user used as the resin (A)) is prepared (refer to Table 1 above).

(實施例1) (Example 1)

將表3所示之比例(質量%)之樹脂(A)及樹脂(B)乾摻。繼而,將乾摻之混合物投入至40mmΦ單軸擠出機之樹脂投入口,於模嘴溫度200℃下進行熔融混練,藉此獲得第1樹脂層用之樹脂組成物。 The resin (A) and the resin (B) in the ratio (mass %) shown in Table 3 were dry blended. Then, the dry blended mixture was put into a resin inlet of a 40 mmΦ uniaxial extruder, and melt-kneading was performed at a die temperature of 200°C, thereby obtaining a resin composition for the first resin layer.

使用2種2層40mmΦT字模膜成形機將所獲得之第1樹脂層用之樹脂組成物、及第2樹脂層用之樹脂(C)投入至各自之擠出機,於加工溫度240℃之條件下成形,從而製作100μm厚之2種2層T字模膜。所製作之具有雙層構造之100μm厚之積層膜中之第1層與第2層之厚度比設為60/40。 The obtained resin composition for the first resin layer and the resin (C) for the second resin layer were put into the respective extruders using two types of two-layer 40mmΦ T-shaped film forming machines, and the processing temperature was 240°C. Under the molding, two types of 2-layer T-shaped film with a thickness of 100 μm were produced. The thickness ratio of the first layer and the second layer in the 100 μm thick laminated film having a double-layer structure was set to 60/40.

(實施例2~8及12~14、比較例1~3、5及10) (Examples 2-8 and 12-14, Comparative Examples 1-3, 5 and 10)

將樹脂(A)與樹脂(B)之種類及量如表3或表4所示進行變更,除此以外,以與實施例1同樣之方式製作第1樹脂層用之樹脂組成物。繼而,將第1樹脂層及第2樹脂層之厚度如表3或表4所示進行變更,除此以外,以與實施例1同樣之方式製作包含第1樹脂層及第2樹脂層之積層膜。 The resin composition for the first resin layer was prepared in the same manner as in Example 1 except that the types and amounts of resin (A) and resin (B) were changed as shown in Table 3 or Table 4. Next, the thicknesses of the first resin layer and the second resin layer were changed as shown in Table 3 or Table 4, except that the build-up layer including the first resin layer and the second resin layer was produced in the same manner as in Example 1. membrane.

(實施例9~11、比較例4及6~9) (Examples 9-11, Comparative Examples 4 and 6-9)

將樹脂(A)與樹脂(B)之種類及量如表3或表4所示進行變更,除此以外,以與實施例1同樣之方式製作第1樹脂層用之樹脂組成物。繼而,於不使用樹脂(C)之情況下,使用所製作之樹脂組成物, 以與實施例1同樣之方式製作100μm厚之1層T字模膜。 The resin composition for the first resin layer was prepared in the same manner as in Example 1 except that the types and amounts of resin (A) and resin (B) were changed as shown in Table 3 or Table 4. Then, without using the resin (C), using the produced resin composition, In the same manner as in Example 1, a 100 μm thick T-shaped film was produced.

關於上述實施例及比較例中所獲得之第1樹脂層用之樹脂組成物及膜,藉由下述方法進行評價。評價結果示於表3或表4。 The resin composition and film for the first resin layer obtained in the above examples and comparative examples were evaluated by the following methods. The evaluation results are shown in Table 3 or Table 4.

(1)樹脂組成物之中和度 (1) Neutralization degree of resin composition

中和度係根據樹脂(A)之中和度與其含量而計算。 The degree of neutralization is calculated based on the degree of neutralization of the resin (A) and its content.

(2)樹脂組成物之MFR (2) MFR of resin composition

MFR係依據JIS K7210-1999,於190℃、2160g負載下進行測定。 MFR is measured according to JIS K7210-1999 at 190°C under a load of 2160g.

(3)樹脂組成物之菲卡軟化溫度 (3) Fica softening temperature of resin composition

菲卡軟化溫度係依據JIS K7206-1999所規定之A50法進行測定。 The Fika softening temperature is measured according to the A50 method specified in JIS K7206-1999.

(4)80℃收縮率 (4) 80℃ shrinkage

將樹脂組成物於厚度100μm之膜上進行成形,切斷成寬度方向25mm×長度方向150mm,標記出間隔100mm之標線,而作為試片樣品。於玻璃板之上撒上用以防止膜附著之澱粉(Nikka股份有限公司製造,Nikkari powder),於其上放置試片樣品,於加壓成形機之加熱板上於80℃下加熱2分鐘。測定膜上之標線於加熱後之間隔,根據以下之式計算收縮率(%)。 The resin composition was molded on a film with a thickness of 100 μm, cut into a width of 25 mm × a length of 150 mm, and a reticle with an interval of 100 mm was marked as a test piece sample. Sprinkle starch (Nikkari powder, manufactured by Nikka Co., Ltd.) on the glass plate to prevent the film from adhering, place the test piece sample on it, and heat at 80°C for 2 minutes on the hot plate of the press forming machine. Measure the interval between the marks on the film after heating and calculate the shrinkage (%) according to the following formula.

收縮率(%)=100mm-收縮後之標線之間隔距離(mm)/100 mm×100 Shrinkage (%)=100mm- the distance between the marked lines after shrinkage (mm)/100 mm×100

(5)拉伸試驗(模數) (5) Tensile test (modulus)

將切割膜基材裁斷成10mm寬之短條狀,而作為測定對象。依據JIS K7127,於試片:寬10mm×長200mm、夾具間隔:100mm之條件下,分別對測定對象之MD方向、TD方向各方向上之伸長距離25%及50%時之膜強度(25%模數及50%模數)進行測定。再者,試驗速度設為500mm/分鐘。 The dicing film base material was cut into short strips of 10 mm in width and used as the measurement object. According to JIS K7127, under the conditions of test piece: width 10mm × length 200mm, clamp interval: 100mm, the film strength (25%) when the elongation distance in the MD and TD directions of the measurement object is 25% and 50% respectively Modulus and 50% modulus). In addition, the test speed was set to 500 mm/min.

[表3]

Figure 108128323-A0101-12-0034-3
[table 3]
Figure 108128323-A0101-12-0034-3

[表4]

Figure 108128323-A0101-12-0035-4
[Table 4]
Figure 108128323-A0101-12-0035-4

關於使用含有乙烯-不飽和羧酸-不飽和羧酸酯共聚合體(三元共聚合體)之離子聚合物即樹脂(A)30質量份以上且90質量份以下及乙烯系共聚合體即樹脂(B)10質量份以上且70質量份以下、且菲卡軟化點未滿50℃之樹脂組成物所製作之實施例之切割膜基材,其熱(80℃)收縮性與強度兩者均優異。另一方面,使用二元共聚合體之離子聚合物所得之比較例1之樹脂組成物之菲卡軟化點超過50℃。使用此種樹脂組成物所製作之切割膜基材之熱收縮率較低。使用雖含有樹脂(A)與樹脂(B)、但菲卡軟化點超過50℃之比較例2及3之樹脂組成物所製作之切割膜基材亦與比較例1同樣地,熱收縮率較低。 Regarding the use of an ionic polymer containing an ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer (ternary copolymer), that is, a resin (A) of 30 parts by mass or more and 90 parts by mass or less, and an ethylene-based copolymer (B) ) The dicing film substrate of the embodiment produced by the resin composition of 10 parts by mass or more and 70 parts by mass or less and the Fica softening point of less than 50°C has excellent heat (80°C) shrinkage and strength. On the other hand, the resin composition of Comparative Example 1 obtained by using the ionic polymer of the binary copolymer has a Fica softening point exceeding 50°C. The thermal shrinkage rate of the dicing film base material produced by using such a resin composition is low. Although the resin film compositions of Comparative Examples 2 and 3, which contain the resin (A) and the resin (B) but whose Fica softening point exceeds 50°C, were also the same as Comparative Example 1, the heat shrinkage ratio was low.

使用含有70質量份以上且90質量份以下之樹脂(A)及30質量份以上且10質量份以下之樹脂(B)、且菲卡軟化點未滿50℃之樹脂組成物所獲得之實施例9~11之切割膜基材雖為單層,但同時發揮充分之強度與熱收縮性。 Examples obtained by using a resin composition containing 70 parts by mass or more and 90 parts by mass or less of resin (A) and 30 parts by mass or more and 10 parts by mass or less of resin (B), and having a Fica softening point of less than 50°C Although the cutting film substrate of 9~11 is a single layer, it also exerts sufficient strength and heat shrinkability.

含有超過90質量份之量之樹脂(A)及未滿10質量份之樹脂(B)之比較例4及5之樹脂組成物之菲卡軟化點超過50℃。使用此種樹脂組成物所製作之切割膜基材雖強度較高,但熱收縮率較低。同樣地,使用離子聚合物作為第1樹脂層之比較例6~10之切割膜基材亦雖顯示較高之強度,但熱收縮率較低。特別是比較例7中所使用之離子聚合物2雖菲卡軟化點未滿50℃,但熱收縮率較低。 The resin compositions of Comparative Examples 4 and 5 containing more than 90 parts by mass of the resin (A) and less than 10 parts by mass of the resin (B) have a Fica softening point exceeding 50°C. Although the substrate of the dicing film produced by using such a resin composition has high strength, its thermal shrinkage rate is low. Similarly, the dicing film substrates of Comparative Examples 6 to 10 using an ionic polymer as the first resin layer also showed higher strength, but the thermal shrinkage rate was lower. In particular, although the ionic polymer 2 used in Comparative Example 7 had a Fica softening point of less than 50°C, the thermal shrinkage rate was low.

根據該等結果可知,為了獲得兼具較高強度與較高熱收縮率之切割膜基材,重要的是成為原料之樹脂組成物中之乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物即樹脂(A)之含量 為30質量份以上且90質量份以下,乙烯系共聚合體即樹脂(B)之含量為10質量份以上且70質量份以下,且菲卡軟化點未滿50℃。 From these results, it is known that in order to obtain a dicing film substrate having both high strength and high thermal shrinkage, it is important that the ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer in the resin composition that becomes the raw material The content of ionic polymer or resin (A) It is 30 mass parts or more and 90 mass parts or less, and the content of the resin (B) which is an ethylene-based copolymer is 10 mass parts or more and 70 mass parts or less, and the Fica softening point is less than 50°C.

本申請案主張基於2018年8月8日申請之日本專利特願2018-149562之優先權。該申請說明書所記載之內容全部被引用至本案說明書。 This application claims priority based on Japanese Patent Application No. 2018-149562 filed on August 8, 2018. The contents of the application specification are all cited in the specification of the case.

(產業上之可利用性) (Industry availability)

本發明之切割膜可較佳地用於不僅實施將半導體晶圓分割成晶片單元之切割步驟與擴張步驟、且實施熱收縮步驟之半導體元件之製造方法。特別是本發明之切割膜由於兼具較高強度與較高熱收縮性,故而可較佳地用於採用在擴張步驟中對切割膜施加比習知法(刀片切割法或雷射剝蝕法等)大之應力之隱形切割(註冊商標)法之製造方法。藉由使用本發明之切割膜,能夠使分割後之晶片之間隔變得均勻,減少其後之步驟中之製品不良,從而可以較高之產率製造半導體裝置。 The dicing film of the present invention can be preferably used for a method of manufacturing a semiconductor device that not only implements a dicing step and an expansion step for dividing a semiconductor wafer into wafer units, but also performs a heat shrinking step. In particular, since the cutting film of the present invention has both high strength and high heat shrinkage, it can be preferably used for applying the conventional method (blade cutting method or laser ablation method, etc.) to the cutting film in the expansion step Manufacturing method of invisible cutting (registered trademark) method of large stress. By using the dicing film of the present invention, the interval of the divided wafers can be made uniform, and the product defects in the subsequent steps can be reduced, so that the semiconductor device can be manufactured with higher yield.

1‧‧‧第1樹脂層 1‧‧‧The first resin layer

2‧‧‧第2樹脂層 2‧‧‧The second resin layer

10‧‧‧切割膜基材 10‧‧‧Cut film base material

Claims (10)

一種切割膜基材用樹脂組成物,其含有:乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)30質量份以上且90質量份以下、及 A resin composition for a dicing film base material, comprising: an ionic polymer (A) of ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer of 30 parts by mass or more and 90 parts by mass or less, and 乙烯系共聚合體(B)10質量份以上且70質量份以下(其中,將成分(A)與成分(B)之合計設為100質量份),且 10 parts by mass or more and 70 parts by mass or less of the ethylene-based copolymer (B) (where the total of the component (A) and the component (B) is set to 100 parts by mass), and JIS K7206-1999所規定之菲卡軟化點未滿50℃。 The Fika softening point specified in JIS K7206-1999 is less than 50°C. 如請求項1之切割膜基材用樹脂組成物,其中,上述乙烯-不飽和羧酸-不飽和羧酸酯共聚合體之離子聚合物(A)之JIS K7206-1999所規定之菲卡軟化點為25℃以上且60℃以下。 The resin composition for a dicing film base material according to claim 1, wherein the above-mentioned ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid ester copolymer ionic polymer (A) has the Fika softening point specified in JIS K7206-1999 It is 25°C or more and 60°C or less. 如請求項1之切割膜基材用樹脂組成物,其中,上述乙烯系共聚合體(B)係JIS K7206-1999所規定之菲卡軟化點為50℃以下之樹脂、或不具有上述菲卡軟化點之樹脂。 The resin composition for a dicing film base material according to claim 1, wherein the ethylene-based interpolymer (B) is a resin having a Fika softening point defined by JIS K7206-1999 of 50°C or lower, or does not have the above-mentioned Fika softening Point of resin. 如請求項1之切割膜基材用樹脂組成物,其中,上述乙烯系共聚合體(B)係自乙烯-α-烯烴共聚合體及乙烯-不飽和羧酸酯共聚合體所構成之群組選擇之至少一種。 The resin composition for a dicing film substrate according to claim 1, wherein the ethylene-based copolymer (B) is selected from the group consisting of an ethylene-α-olefin copolymer and an ethylene-unsaturated carboxylate copolymer At least one. 如請求項1之切割膜基材用樹脂組成物,其中,藉由依據JIS K7210-1999之方法於190℃、負載2160g下所測定之上述乙烯系共聚合體(B)之熔融流動速率(MFR)為0.2g/10分鐘~30.0g/10分鐘。 The resin composition for a dicing film base material according to claim 1, wherein the melt flow rate (MFR) of the above-mentioned ethylene-based interpolymer (B) measured by a method according to JIS K7210-1999 at 190°C under a load of 2160 g It is 0.2g/10min~30.0g/10min. 如請求項1之切割膜基材用樹脂組成物,其中,藉由依據JIS K7210-1999之方法於190℃、負載2160g下所測定之上述切割膜基材用樹脂組成物之熔融流動速率(MFR)為0.1g/10分鐘~50g/10分鐘。 The resin composition for a dicing film base material according to claim 1, wherein the melt flow rate (MFR) of the resin composition for a dicing film base material measured by a method according to JIS K7210-1999 at 190°C under a load of 2160 g (MFR ) Is 0.1g/10min~50g/10min. 一種切割膜基材,其含有至少一層包含請求項1之切割膜基材用樹脂組成物之層。 A dicing film base material comprising at least one layer containing the resin composition for a dicing film base material of claim 1. 如請求項7之切割膜基材,其含有:包含請求項1之切割膜基材用樹脂組成物之第1樹脂層、及 The dicing film substrate according to claim 7, which includes: a first resin layer containing the resin composition for a dicing film substrate according to claim 1, and 積層於上述第1樹脂層之包含樹脂(C)之第2樹脂層。 The second resin layer including the resin (C) laminated on the first resin layer. 如請求項8之切割膜基材,其中,上述樹脂(C)係自乙烯-不飽和羧酸系共聚合體及上述乙烯-不飽和羧酸系共聚合體之離子聚合物所構成之群組選擇之至少1種。 The dicing film substrate according to claim 8, wherein the resin (C) is selected from the group consisting of an ethylene-unsaturated carboxylic acid copolymer and an ionic polymer of the ethylene-unsaturated carboxylic acid copolymer At least 1 kind. 一種切割膜,其特徵在於具有:請求項7至9中任一項之切割膜基材、及 A cutting film, characterized by having: the cutting film substrate of any one of claims 7 to 9, and 積層於上述切割膜基材之至少一面之黏著層。 An adhesive layer deposited on at least one side of the dicing film substrate.
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