CN112997288A - Imprinting for light emitting diode transfer and transfer method thereof - Google Patents
Imprinting for light emitting diode transfer and transfer method thereof Download PDFInfo
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- CN112997288A CN112997288A CN202080006180.8A CN202080006180A CN112997288A CN 112997288 A CN112997288 A CN 112997288A CN 202080006180 A CN202080006180 A CN 202080006180A CN 112997288 A CN112997288 A CN 112997288A
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- 238000012546 transfer Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 210
- 239000007771 core particle Substances 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 229920001971 elastomer Polymers 0.000 claims description 4
- 239000000806 elastomer Substances 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004743 Polypropylene Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- -1 polypropylene Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 239000004945 silicone rubber Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000013013 elastic material Substances 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Abstract
The invention provides an impression for transferring a light-emitting diode and a transfer method thereof, wherein the impression is used for transferring light-emitting diode core particles in a large quantity, and comprises the following steps: the first conductive substrate and the second conductive substrate are oppositely arranged, and an electrogenerated elastic dielectric body is positioned between the first conductive substrate and the second conductive substrate and is directly connected with the first conductive substrate and the second conductive substrate.
Description
Technical Field
The invention relates to the technical field of display, in particular to a transfer imprinting method and a transfer method of a light-emitting diode chip.
Background
In the modern society, the display technology has profoundly influenced the work and life style of people, and everyone faces various display screens every day.
In recent years, Mini/micro LED, which is the main display development direction in the future, receives unprecedented attention, and due to the advantages of self-luminescence, simple structure, small volume, energy conservation and the like, a micro light emitting diode (MiniLED/micro LED) chip is a revolutionary technology of the next generation, and a great amount of intelligence and funds are spent on the development of the Mini/micro LED technology from an LED chip factory to a display screen manufacturer, and from an equipment manufacturer to a material manufacturer.
However, the foreground is bright and the path is not flat, and there are many technical problems to be overcome, such as consistency of epitaxy, testing of chips, packaging problems, etc. Among them, the huge transfer of chips is one of the key problems, which is related to the final success or failure of the technology.
Because the Mini/Micro core particles are very small in size, and the number of the core particles required by the display screen is quite large, the core particles cannot be transferred from a wafer to a circuit board in a traditional one-particle transferring mode, and the core particles must be transferred in a large amount. At present, a plurality of companies develop related technologies, and the invention is one scheme of the related technologies. At present, the micro light emitting diode core particle transfer technology is difficult to commercialize due to slow speed and high cost, and although the transfer technologies based on van der waals force, electrostatic force and electromagnetic force are available, the transfer technologies have the problems of high cost, low efficiency and difficult large size.
Disclosure of Invention
The invention provides a scheme capable of realizing massive transfer of a Mini/MicroLED chip, reducing transfer cost and improving reliability and yield of core grain transfer, and provides imprinting for transferring light-emitting diodes, which is used for transferring the light-emitting diode cores massively, such as taking out the light-emitting diode cores from a wafer and transferring the light-emitting diode cores to a display circuit board.
Embossing, as used herein, is understood to mean a stamp having a pattern or, in some embodiments, a film having a pattern on a surface thereof, and includes:
a built-in or external power supply for providing selective electric charge,
the first conductive substrate and the second conductive substrate which are oppositely arranged, and the electrogenerated elastic dielectric body positioned between the first conductive substrate and the second conductive substrate are deeply researched by colleges and scientific research institutions at home and abroad, when the first conductive substrate and the second conductive substrate are charged to generate voltage, the electrogenerated elastic dielectric body generates strain change in an electric field formed by the voltage and generates obvious deformation under pre-acting force, the second conductive substrate is provided with a plurality of through holes, the through holes are used for setting a stamping pattern, and the first conductive substrate and the second conductive substrate are respectively electrically connected with a power supply.
In the present invention, it is preferred that the electroelastic dielectric material comprises, after energization: polyurethane, polypropylene, electroactive acid ester, or electroactive silicone rubber. The above materials will increase the amount of deformation at a voltage below the breakdown after the completion of the pre-stretching. Compared with the conventional thermal change material used for stamping, the electroactive dielectric elastic material has the advantages that the uniformity of an electric field is more controllable, the deformation efficiency is high and the energy is saved in the application of large-size wafers.
In the present invention, it is preferred that the electroelastic dielectric comprises a first surface and a second surface, wherein the first surface is in contact with the first electrically conductive substrate and the second surface is in contact with the second electrically conductive substrate.
In the present invention, it is preferable that the elastic modulus of the electroelastic dielectric is not more than 10MPa, which ensures that the electroelastic dielectric can be rapidly restored to its original shape in a non-electric field state or a repulsive electric field state.
In the present invention, it is preferred that the electroelastic dielectric has a dielectric constant of not less than 5, and cooperates with the first conductive substrate and the second conductive substrate to establish an electric field sufficient to influence the force.
In the present invention, preferably, the through holes on the second conductive substrate are distributed in an array pattern, and the positions of the through holes on the second conductive substrate are matched according to design requirements.
In the present invention, it is preferable that the aperture of the through-hole is designed to be 1 μm to 50 μm, or 50 μm to 100 μm, or 100 μm to 200 μm according to the size of the light emitting diode core particle.
In the present invention, it is preferable that when the first conductive substrate and the second conductive substrate are electrically different from each other, the strain of the electroelastic dielectric body is increased, and the electroelastic dielectric body is more likely to be deformed in a pre-stretched state.
In some embodiments of the present invention, it is preferable that when the first conductive substrate and the second conductive substrate are electrically different, the first conductive substrate and the second conductive substrate move toward each other to apply pressure to the electroelastic dielectric, and the electroactive elastomer protrudes from the through hole of the second conductive substrate to form a pattern protrusion.
In the present invention, it is preferable that the height of the pattern projection is 5 μm to 100 μm, where the projection height is a projection height of the pattern after the electroelastic dielectric is formed into a stable shape by applying a pressure to the electroelastic dielectric under a pre-electric field.
In some embodiments of the present invention, preferably, the first conductive substrate and the second conductive substrate are charged by a power source, and when the first conductive substrate and the second conductive substrate are electrically different from each other, the first conductive substrate and the second conductive substrate attract each other to generate a relative motion, so as to compress the electroelastic dielectric.
In some embodiments of the invention, it is preferred that the first and second electrically conductive substrates are electrically identical, and that the first and second electrically conductive substrates are spaced apart from each other to provide space for the electroelastic dielectric to recover its shape.
In the present invention, it is preferable that the electroelastic dielectric has a film-like structure when the first conductive substrate and the second conductive substrate have the same electric property or are not charged.
In the present invention, it is preferable that the first conductive substrate and the second conductive substrate comprise: gold, platinum, copper, tungsten, aluminum, silver, titanium, alloys, or the like, or may be a non-metallic conductive material such as ITO, IZO, or the like.
In the present invention, it is preferable that the power supply supplies the same kind or different kinds of electric charges to the first conductive substrate and the second conductive substrate, respectively.
Based on the imprinting for transferring the light emitting diode provided by the above invention, a method for transferring the light emitting diode is correspondingly provided, which is used for transferring the light emitting diode in bulk, for example, transferring the core particles from the wafer to the temporary carrier film or, for example, the display circuit substrate by imprinting, and specifically comprises the following steps:
step 1: injecting different charges into the first conductive substrate and the second conductive substrate respectively through a power supply, moving the first conductive substrate and the second conductive substrate in opposite directions under the action of an electric field force field and/or an external force field, wherein the opposite movement refers to the opposite movement, for example, the first conductive substrate moves towards the second conductive substrate while the second conductive substrate does not move, or vice versa, or moves in opposite directions together, and the electroactive elastomer is extruded to deform and protrude from the through hole of the second conductive substrate by applying pressure to the electroactive elastomer through the conductive substrates to form a pattern bulge;
step 2: providing a light emitting diode array, wherein the light emitting diode array is provided with a plurality of core particles, the number of the core particles can be more than one thousand, and the light emitting diodes are adsorbed and transferred in a large amount by utilizing the imprinting and contacting the pattern bulges with the light emitting diodes;
and step 3: the same charge is introduced into the first conductive substrate and the second conductive substrate through the power supply, the first conductive substrate and the second conductive substrate are far away from each other, and the electroelastic dielectric body recovers the shape before deformation to release the light-emitting diode.
In some embodiments of the invention, step 3 can be replaced by de-energizing either the first conductive substrate or the second conductive substrate and the electro-elastic dielectric returning to a pre-deformed shape, releasing the light emitting diode.
In some embodiments of the present invention, in step 3, the second conductive substrate does not displace, and the light emitting diode is released after contacting with the second conductive substrate along with the shrinkage of the bump.
In some embodiments of the present invention, the first conductive substrate and/or the second conductive substrate are made of a flexible conductive material, so as to improve the stability of the system.
The invention has the advantages that the principle of simple like-pole repulsion and opposite-pole charge attraction is adopted to realize the mass transfer, the electroelastic dielectric material is adopted to improve the response sensitivity of the imprinting, the technical problem of how to improve the mass transfer yield is solved, and the scheme can realize the mass transfer of the Mini/MicroLED.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. Furthermore, the drawing figures are for a descriptive summary and are not drawn to scale.
FIG. 1 is a schematic view of an imprinting structure according to a first embodiment;
FIG. 2 is a schematic diagram illustrating an imprint structure after being strained by applying a current according to a first embodiment;
FIG. 3 is a schematic view of the principal active surface of one side of a second conductive substrate being stamped according to one embodiment;
FIG. 4 is a schematic diagram illustrating a second embodiment of transferring core particles from a wafer by imprinting;
FIG. 5 is a schematic diagram illustrating the structure of the second embodiment of the method for picking core particles from a wafer by imprinting;
FIGS. 6 to 10 are schematic structural views illustrating the transfer of the core particles to the intermediate carrier by imprinting according to the second embodiment;
FIG. 11 is a schematic diagram illustrating a structure of transferring core particles to a display circuit board by imprinting according to the second embodiment;
FIG. 12 is a schematic structural diagram of an imprint-transferred core grain with mechanical intervention in the third embodiment;
fig. 13 is a schematic view of an embossed structure in which the pre-pressing force and the electric field are separated in the fourth embodiment.
The labels in the figure are:
100. stamping; 110. a first conductive substrate; 110', a first connection substrate; 120. a second conductive substrate; 120', a second connection substrate; 121/121', a through hole; 130. an electroelastic dielectric; 131. a protrusion; 200. a first carrier; 210. a connecting structure; 220. a substrate; 300. core particles; 310. a wire bonding electrode; 400. a second carrier; 420. a drive electrode; 510. a guide bar; 520. a robotic arm.
Detailed Description
For the problems of low transfer efficiency, high process cost and difficult large-scale formation of the prior art transfer technology, the micro led transfer of the present invention will be described in detail with reference to the schematic drawings, and before further describing the present invention, it should be understood that the present invention is not limited to the specific embodiments described below, since specific embodiments can be modified. It is also to be understood that the embodiments are presented by way of illustration, not limitation, since the scope of the invention is defined by the appended claims. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art.
Referring to fig. 1, in a first embodiment of the present invention, there is provided an imprint for light emitting diode transfer, in particular for bulk transfer of light emitting diode die from a wafer, the imprint comprising:
a built-in or external power supply for providing selective electric charge,
the first conductive substrate 110 and the second conductive substrate 120 are oppositely arranged, and the materials of the first conductive substrate 110 and the second conductive substrate 120 comprise: gold, platinum, copper, tungsten, aluminum, silver, titanium, alloys, or other metals, or may be ITO, IZO, or other non-metallic conductive materials, an electro-elastic dielectric 130 disposed therebetween, the electro-elastic dielectric 130 including a first surface and a second surface, wherein the first surface is in contact with the first conductive substrate 110, and the second surface is in contact with the second conductive substrate 120.
The first conductive substrate 110 and the second conductive substrate 120 are electrically connected to a power supply, respectively, when the power supply applies a different charge to the first conductive substrate 110 and the second conductive substrate 120 to generate a voltage, for example, a positive charge is applied to the first conductive substrate 110, a negative charge is applied to the second conductive substrate 120, the electroelastic dielectric 130 is changed in strain in an electric field formed by the voltage, and is significantly deformed under a pre-acting force, the first conductive substrate 110 has a plate-shaped structure with a continuous surface, the second conductive substrate 120 has a plurality of through holes, the through holes 121 on the second conductive substrate 120 are distributed in an array-type pattern, the core grains in the array are matched and arranged, according to the design requirement, the aperture of the through holes 121 is designed to be 1 μm to 50 μm, or 50 μm to 100 μm, or 100 μm to 200 μm according to the size of the core grains of the light emitting diode at a position corresponding to the core grains on the wafer, the design is particularly suitable for the core particle bulk transfer process below 100 mu m.
Referring to fig. 2, the shape of the opening 121 is used to define an embossed pattern, and when the electroelastic dielectric 130 is deformed under the pre-compression force and the electric field, it protrudes to some extent from the opening 121 to form a protrusion 131, and the electroelastic dielectric 130 is a continuous whole.
In this embodiment, the electroelastic dielectric 130 materials include: polyurethane, polypropylene, electroactive acid ester, or electroactive silicone rubber. After the material is pre-stretched, for example, by applying a pressure to the electro-elastic dielectric body 130 through the first conductive substrate 110 and the second conductive substrate 120, the amount of deformation will increase under the condition of voltage lower than the breakdown voltage, and when the first conductive substrate 110 and the second conductive substrate 120 are different in electrical property, the electro-elastic dielectric body 130 is strained and is more easily deformed in the pre-stretched state.
In a further embodiment of the present invention, when the first conductive substrate 110 and the second conductive substrate 120 are electrically different, the first conductive substrate 110 and the second conductive substrate 120 attract each other to generate a movement in opposite directions, the first conductive substrate 110 and the second conductive substrate 120 move in opposite directions, a pressing force is applied to the electroelastic dielectric body 130, the electroactive elastic body 130 protrudes from the through hole 121 of the second conductive substrate 120 to form the patterned bump 131, and in some embodiments, the first conductive substrate 110 and the second conductive substrate 120 may also generate a movement in opposite directions by a mechanical force.
Compared with the conventional thermal change material, the electroactive dielectric elastic material is used for stamping, so that the uniformity of an electric field is more controllable, the deformation efficiency is high and the energy is saved in the application of a large-size wafer. In particular, after the voltage application is stopped, the electroactive dielectric elastic material can quickly recover the original film-like morphology.
In this embodiment, it is preferable that the elastic modulus of the electroelastic dielectric body 130 is not more than 10MPa, the dielectric constant of the electroelastic dielectric body 130 is not less than 5, and an electric field sufficient to influence the force is established in cooperation with the first conductive substrate 110 and the second conductive substrate 120, and under the electric field, the electroelastic dielectric body 130 is a flexible body. The electro-elastic dielectric 130 may also be a porous material or foam structure, and the imprint transfer head is relatively simple to manufacture, requires only suitable materials (and simple processes such as exposure, plating, etc.), and is highly efficient to industrialize.
Referring to fig. 3, the stamp referred to herein may be understood as a stamp with a pattern, and the stamp may be designed in a grid pattern as viewed from a main surface for implementation, for example, the second conductive substrate 120 has a periodic or non-periodic through hole 121, and in some embodiments, the stamp may be a film layer with a pattern of through holes 121 or protrusions 131 on a surface thereof.
In the imprinting of the present embodiment, the first conductive substrate 110 and the second conductive substrate 120 can be controlled to be charged with the same charge and have the same electrical property, and under the action of the repulsion force of the same electrical property, the first conductive substrate 110 and the second conductive substrate 120 are away from each other, so as to provide a deformation space for the shape of the electroelastic dielectric 130 to recover. Alternatively, the first conductive substrate 110 and the second conductive substrate 120 may be de-energized and the electro-elastic dielectric 130 may recover its shape and assume a film-like structure.
Referring to fig. 4, in a second embodiment of the present invention, based on the stamping provided in the first embodiment, a method for using the stamping and a transfer method for a light emitting diode are specifically described, in which the stamped first conductive substrate 110 is positively charged, the second conductive substrate 120 is negatively charged, the two substrates move relative to each other, the elastic dielectric body 130 is pressed, under the dual action of an electric field and a pressure, the elastic dielectric body 130 is significantly shrunk and deformed, the elastic dielectric body 130 protrudes from the through hole 121 of the second conductive substrate 120, the protrusion 131 is not located on the same surface as the lower surface of the second conductive substrate 120, and is lower than the lower surface of the second conductive substrate 120, and the vertical distance between the lower surface of the second conductive substrate 120 and the protrusion 131 is the height of the protrusion, which is about 5 μm to 100 μm. In the present embodiment, a first carrier 200 is provided, by way of example, the first carrier 200 is a wafer having a plurality of core particles 300, the core particles are fixed on a substrate 220 of the wafer through an unstable connection structure 210, the connection structure 210 is, for example, a columnar structure, and the connection structure 210 is made of a material such as silicon dioxide, silicon gel, or resin, or may be a weakened bridge structure such as silicon nitride, silicon dioxide, or a semiconductor material. In some embodiments, the wafer may also be replaced by other core particle carriers, such as a slide film or slide jig.
Referring to fig. 5, when the bulk transfer is performed, the stamp 100 is parallel to the entire wafer, the protrusion 131 of the stamp 100 faces the core grain side of the wafer, and the protrusion 131 corresponds to the core grain 300. The core grain 300 is separated from the columnar structure by the imprinting 100 by approaching and conforming the core grain 300 with the imprinting 100, applying an adhesion force, such as van der waals force, to the core grain 300 with the imprinting 100, and then lifting up the core grain 300 with the imprinting 100.
Referring to fig. 6 and 7, in the present embodiment, the stamp has a first side near the first conductive substrate 110 and a second side near the second conductive substrate 120, and the core particles 300 are transferred to a second carrier 400, such as a display intermediate carrier or specifically a display circuit board, by using the protrusions 131 on the stamp second side, the intermediate carrier such as a nozzle, a blue film or a white film, and commercial shipment is performed by transferring core particles of different wavelengths and different specifications to the intermediate carrier, respectively.
Referring to fig. 8 to 10, in order to release the core particle 300 from the imprinting, in the present embodiment, the electrical property of the charge injected into the first conductive substrate 110 or the second conductive substrate 120 is modified, when the first conductive substrate 110 and the second conductive substrate 120 have the same electrical property, the same electrical property of the charge is positive, but not limited, the charges may be negative, the first conductive substrate 110 and the second conductive substrate 120 both adopt positive charges, the second conductive substrate 120 moves toward the core particle 300 under the repulsive force of the charges until the second conductive substrate 120 presses the core particle 300, the core particle 300 is pushed away from the electroelastic dielectric body 130, in the process, the electroelastic dielectric body gradually recovers the film shape, after the core particle 300 is separated from the imprinting, the core particle 300 is placed on the second carrier 400 by the pushing force provided by the second conductive substrate 120, and finally the imprinting is removed, the huge transfer of the core particles 300 is completed, the whole process cannot damage the impression, the impression can be repeatedly used for many times, the embodiment does not need to depend on heating to control deformation, the high-temperature deformation is limited by the uniformity of the heating temperature, the whole response time is needed, and the precision is limited to a certain extent.
Referring to fig. 11, in some embodiments, the second carrier 400 is a display circuit board, in these embodiments, a chip with a flip chip structure of the core particle 300 is taken as an example, in this embodiment, the N-type electrode and the P-type electrode of the flip chip particle are located on the same side of the light emitting diode core particle, and the electrodes are far from the light emitting surface. The welding electrode 310 of the flip chip particle is far away from the main light-emitting surface, the side where the flip chip particle is captured in the imprinting mode is aligned and attached to the side, provided with the driving electrode 410, of the display circuit board, and the welding electrode 310 is correspondingly bonded with the driving electrode 410 of the display circuit board.
Referring to fig. 12, in a third embodiment of the present invention, the imprinting is performed in conjunction with mechanical force controlled transfer, the surface of the electroelastic dielectric 130 is adhesive or coated with an adhesive material having a first conductive substrate 110 and a second conductive substrate 120 made of metal on both the top and bottom sides, wherein: the metals on the two sides are not conducted with each other; at least one side of the metal is in a grid shape.
Under the condition that the first conductive substrate 110 and the second conductive substrate 120 have no or the same electric charge, the mechanical arm 520 is connected to the second conductive substrate 120 through a mechanical connection guide 510, the guide 510 as an example penetrates through the first conductive substrate 110 and the electroelastic dielectric body 130, one end of the two ends of the guide 510 is connected to the mechanical arm 520, the other end of the two ends of the guide 510 is connected to the second conductive substrate 120, the mechanical force provided by the mechanical arm 520 is transmitted to the second conductive substrate 120, the second conductive substrate 120 is pushed to move towards the core particle 300 rapidly by combining the deformation force of the electroelastic dielectric body 130, for example, the second conductive substrate 120 pushes the core particle 300, the electroelastic dielectric body 130 and the core particle 300 are separated, and finally the core particle 300 is mounted on the second carrier 400. In some embodiments, the second conductive substrate 120 may be fixed in position, and the first conductive substrate 110 is connected to the robot arm 520 through the guide bar 510, and the mechanical force is generated by the displacement of the first conductive substrate 110. In this embodiment, the relative distance between the first conductive substrate 110 and the second conductive substrate 120 is controlled to be increased by a mechanical force, and after the electric field is removed, the electroelastic dielectric body 130 rapidly recovers the shape of the film, and the core particle 300 is released onto the second carrier 400 under the compression of the second conductive substrate 120.
Referring to fig. 13, in a fourth embodiment of the present invention, there is provided an imprint for led transfer for bulk transfer of led core particles, comprising: the power supply, the first connection substrate 110 'and the second connection substrate 120' disposed opposite to each other, the elastic dielectric body 130 located between and directly connected to the two, the second connection substrate 120 'having a plurality of through holes 121', the first conductive substrate 110 and the second conductive substrate 120 disposed opposite to each other on both sides of the elastic dielectric body 130, where both sides are only used as an example, that is, the elastic dielectric body 130 is disposed between the first conductive substrate 110 and the second conductive substrate 120, and the first conductive substrate 110 and the second conductive substrate 120 are electrically connected to the power supply, respectively.
The electric field is configured by the first conductive substrate 110 and the second conductive substrate 120, the first connection substrate 110 'and the second connection substrate 120' are disposed above and below the stamp in the figure, and can also provide a pressure to the elastic body 130, the first connection substrate 110 'and the second connection substrate 120' are pressed against each other by a mechanical force, for example, the elastic body 130 is pressed and then protrudes from the through hole 121 'of the second connection substrate 120' to form the protrusion 131 under the effect of the electric field, the configuration of the electric field in this embodiment can be flexibly configured, which is not exhaustive in the present invention.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (20)
1. An imprint for light emitting diode transfer for bulk transfer of light emitting diode core particles,
the method comprises the following steps:
a power supply for supplying power to the electronic device,
the first conductive substrate and the second conductive substrate are oppositely arranged, the electrogenerated elastic dielectric body is positioned between the first conductive substrate and the second conductive substrate and is directly connected with the first conductive substrate and the second conductive substrate, the second conductive substrate is provided with a plurality of through holes, and the first conductive substrate and the second conductive substrate are respectively electrically connected with a power supply.
2. An imprint for light emitting diode transfer as claimed in claim 1, wherein the electroelastic dielectric material comprises: polyurethane, polypropylene, electroactive acid ester, or electroactive silicone rubber.
3. An imprint for light emitting diode transfer as claimed in claim 1, wherein the electro-elastic dielectric comprises a first surface and a second surface, wherein the first surface is in contact with the first electrically conductive substrate and the second surface is in contact with the second electrically conductive substrate.
4. An imprint for light emitting diode transfer as claimed in claim 1, wherein the electroelastic dielectric has a modulus of elasticity of not more than 10 MPa.
5. An imprint for light emitting diode transfer as claimed in claim 1, wherein the dielectric constant of the electroelastic dielectric is not less than 5.
6. An imprint for light emitting diode transfer as claimed in claim 1, wherein the through holes on the second conductive substrate are distributed in an array-type pattern.
7. An imprint for light emitting diode transfer according to claim 1, wherein the aperture of the through hole is 1 μm to 50 μm, or 50 μm to 100 μm, or 100 μm to 200 μm.
8. An imprint for light emitting diode transfer according to claim 1, wherein the strain of the electroelastic dielectric increases when the first electrically conductive substrate and the second electrically conductive substrate are electrically dissimilar.
9. An imprint for light emitting diode transfer as claimed in claim 8, wherein when the first conductive substrate and the second conductive substrate are electrically dissimilar, movement of the first conductive substrate and the second conductive substrate toward each other compresses the electroelastic dielectric such that the electroactive elastomer forms a patterned protrusion from the through hole of the second conductive substrate.
10. An imprint for light emitting diode transfer according to claim 9, wherein the height of the pattern protrusions is 5 μm to 100 μm.
11. An imprint for light emitting diode transfer according to claim 9, wherein the first conductive substrate and the second conductive substrate attract each other to generate a relative motion when the first conductive substrate and the second conductive substrate are electrically different.
12. An imprint for light emitting diode transfer according to claim 1, wherein the first conductive substrate and the second conductive substrate are electrically identical, and wherein the first conductive substrate and the second conductive substrate are distant from each other.
13. An imprint for light emitting diode transfer according to claim 1, wherein the first electrically conductive substrate and the second electrically conductive substrate are electrically identical or uncharged, and the electroelastic dielectric is in the form of a film.
14. An imprint for light emitting diode transfer as claimed in claim 1, wherein the first and second conductive substrate materials comprise: the metal conductor material comprises gold, platinum, copper, tungsten, aluminum, silver, titanium or an alloy of the above metals, and the nonmetal conductor material comprises ITO or IZO.
15. An imprint for light emitting diode transfer according to claim 1, wherein the first conductive substrate is a plate-like structure with a continuous surface.
16. An imprint for light emitting diode transfer as claimed in claim 1, wherein the power supply supplies the same or different charges to the first conductive substrate and the second conductive substrate, respectively.
17. An imprint for light emitting diode transfer for bulk transfer of light emitting diode core particles,
the method comprises the following steps:
a power supply for supplying power to the electronic device,
a first connection substrate and a second connection substrate arranged oppositely, an electroelastic dielectric body positioned between the two and directly connected with the two, wherein the second connection substrate is provided with a plurality of through holes,
the first conductive substrate and the second conductive substrate are arranged oppositely, the electrogenerated elastic dielectric body is positioned between the first conductive substrate and the second conductive substrate, and the first conductive substrate and the second conductive substrate are respectively and electrically connected with a power supply.
18. A method of transferring a light emitting diode using the stamp of any one of claims 1 to 16 for mass transfer of the light emitting diode, comprising the steps of:
step 1: introducing different charges to the first conductive substrate and the second conductive substrate through a power supply, moving the first conductive substrate and the second conductive substrate relatively in opposite directions, applying pressure to the electrogenerated elastic dielectric body, and enabling the electrogenerated active elastic body to deform and protrude from the through hole of the second conductive substrate to form a pattern bulge;
step 2: providing a light emitting diode array, contacting the light emitting diode array by coining, adsorbing and transferring the light emitting diode array in a large quantity;
and step 3: the same charge is introduced into the first conductive substrate and the second conductive substrate through the power supply, the first conductive substrate and the second conductive substrate are far away from each other, and the electroelastic dielectric body recovers the shape before deformation to release the light-emitting diode.
19. The method of claim 18 wherein step 3 is replaced by releasing the light emitting diode by removing power from the first or second conductive substrate and allowing the electroelastic dielectric to return to its pre-deformed shape.
20. The method as claimed in claim 18, wherein in step 3, the second conductive substrate is not displaced, and the led is released after contacting with the second conductive substrate as the bump shrinks.
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| Application Number | Priority Date | Filing Date | Title |
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| PCT/CN2020/116828 WO2022061512A1 (en) | 2020-09-22 | 2020-09-22 | Imprint and transferring method for transferring light emitting diode |
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| CN112997288A true CN112997288A (en) | 2021-06-18 |
| CN112997288B CN112997288B (en) | 2024-05-24 |
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| CN113745130A (en) * | 2021-08-23 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | Transfer mechanism |
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| WO2022061512A1 (en) | 2022-03-31 |
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