CN113745130B - Transfer mechanism - Google Patents
Transfer mechanism Download PDFInfo
- Publication number
- CN113745130B CN113745130B CN202110968534.3A CN202110968534A CN113745130B CN 113745130 B CN113745130 B CN 113745130B CN 202110968534 A CN202110968534 A CN 202110968534A CN 113745130 B CN113745130 B CN 113745130B
- Authority
- CN
- China
- Prior art keywords
- transfer mechanism
- transfer
- layer
- emitting element
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000007246 mechanism Effects 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000001179 sorption measurement Methods 0.000 claims abstract description 29
- 239000010410 layer Substances 0.000 claims description 95
- 239000011241 protective layer Substances 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000002086 nanomaterial Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZXVONLUNISGICL-UHFFFAOYSA-N 4,6-dinitro-o-cresol Chemical compound CC1=CC([N+]([O-])=O)=CC([N+]([O-])=O)=C1O ZXVONLUNISGICL-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 208000025962 Crush injury Diseases 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- -1 SiOx Chemical class 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- YSZKOFNTXPLTCU-UHFFFAOYSA-N barium lithium Chemical compound [Li].[Ba] YSZKOFNTXPLTCU-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical class [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67138—Apparatus for wiring semiconductor or solid state device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application provides a transfer mechanism for transferring a miniature light-emitting element, which comprises a switch substrate and a transfer assembly, wherein the transfer assembly is arranged on the switch substrate, and the transfer assembly comprises: the dielectric layer is a flexible dielectric layer, and a cavity is formed in the dielectric layer; the transfer component is arranged on the inner wall of the cavity facing to one side of the miniature light-emitting element; and the elastic filling layer is filled in the cavity. According to the application, through the arrangement of the flexible dielectric layer and the elastic filling layer, the elastic filling layer can provide enough buffer space when the micro light-emitting element is adsorbed by the transfer component, so that the dielectric layer can be elastically deformed, the contact area of an uneven contact surface between the micro light-emitting element and the transfer mechanism is increased, the adsorption force between the micro light-emitting element and the transfer mechanism is increased, and the yield of the transfer mechanism in the process of transferring the micro light-emitting element is improved.
Description
Technical Field
The application relates to the technical field of display devices, in particular to a transfer mechanism.
Background
Micro-LED (Micro-LED) or Mini-LED (Mini-LED) display technology is a pixel unit using a Micro light emitting element of 1 to 100 micrometers (μm) unit as a display, and has outstanding advantages of high quantum efficiency, high contrast, high viewing angle, high color gamut, extremely fast response time, easy transparent display, long lifetime, etc., compared to LCD and OLED display technologies, and will gradually become the mainstream technology of next-generation displays.
In the manufacturing process of Micro or Mini LED display devices, a key process is to precisely and rapidly transfer a single or cut Micro light emitting element with a Micro light emitting element in a small size onto a display substrate. When a large number of micro light emitting elements can be transferred at one transfer, the process is called macro transfer. Currently, in the mass transfer process, a micro light emitting element is generally picked up by a transfer mechanism onto the transfer mechanism, and then the picked micro light emitting element is transferred to a TFT substrate by the transfer mechanism.
At present, when the micro light emitting element is transferred onto the display substrate due to the reasons of an adapter of a transfer mechanism, errors in the manufacturing process of the micro light emitting element, and the like, the situations of core leakage, standing crystal, micro light emitting element deflection, poor contact between an electrode of the micro light emitting element and a bonding pad, poor cold joint and the like are easy to occur, and finally abnormal display from a pixel is caused, and the yield of the micro light emitting element in the transfer process is low.
Disclosure of Invention
The application provides a transfer mechanism, which aims to solve the problem of low yield in the transfer process of the transfer mechanism.
The application provides a transfer mechanism for transferring a micro light emitting element, comprising: switch base plate and transfer subassembly, transfer subassembly set up in switch base plate is last, transfer subassembly includes:
the dielectric layer is arranged on the switch substrate, is a flexible dielectric layer and is internally provided with a cavity;
the adsorption component is arranged on the inner wall of one surface of the cavity facing the switch substrate;
and the elastic filling layer is filled in the cavity.
In one possible implementation of the present application, the dielectric layer includes a bottom surface and a side surface, the bottom surface is a surface facing the switch substrate, the side surface is enclosed by an edge of the bottom surface, and an internal angle between the side surface and the bottom surface is set at an obtuse angle.
In one possible implementation of the application, a side of the dielectric layer facing the switch substrate is planar.
In one possible implementation of the present application, the transfer mechanism further includes:
and the piezoelectric layer is arranged between the switch substrate and the transfer component.
In one possible implementation of the present application, the transfer mechanism further includes:
and the protective layer is arranged between the piezoelectric layer and the transfer assembly and is made of an insulating material.
In one possible implementation manner of the present application, the switch substrate includes a base, and a gate electrode and a source drain electrode layer sequentially disposed along a direction away from the base.
In one possible implementation of the present application, the piezoelectric layer is disposed on a surface of the gate electrode, and the piezoelectric layer is disposed between the gate electrode and the protective layer.
In one possible implementation of the present application, the protection layer is disposed on the surfaces of the source electrode, the drain electrode, and the piezoelectric layer.
In one possible implementation of the present application, the transfer mechanism further includes: the detection control circuit and the adsorption control circuit are respectively and electrically connected with the switch substrate.
In one possible implementation of the application, the transfer set comprises one of an electrostatic electrode, a coil, or an adhesive glue.
According to the transfer mechanism provided by the application, the transfer component is arranged on the switch substrate, the cavity is formed in the flexible dielectric layer of the transfer component, the transfer component is arranged on the inner wall of the cavity, and the elastic filling layer is filled in the cavity. Because the surface of the miniature luminous element and the surface of the dielectric layer are both uneven structures, namely the contact surface between the miniature luminous element and the transfer mechanism is uneven, through the arrangement of the flexible dielectric layer and the elastic filling layer, the elastic filling layer can provide enough buffer space when the miniature luminous element is adsorbed by the transfer assembly, so that the dielectric layer can be elastically deformed, the contact area between the miniature luminous element and the transfer mechanism is increased, the adsorption force between the miniature luminous element and the transfer mechanism is increased, and the yield of the miniature luminous element transferring process of the transfer mechanism is further improved.
Drawings
The technical solution and other advantageous effects of the present application will be made apparent by the following detailed description of the specific embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic cross-sectional structure of a transfer mechanism according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of a transfer assembly in a transfer mechanism according to an embodiment of the present application.
Fig. 3 is a schematic structural diagram of a switch substrate in the transfer mechanism according to an embodiment of the present application.
Fig. 4 is a schematic structural diagram of a transfer mechanism for adsorbing a micro light emitting device according to an embodiment of the present application.
Fig. 5 is a schematic diagram of a circuit connection relationship of a transfer mechanism according to an embodiment of the present application.
Fig. 6 is a schematic structural diagram of a display substrate according to an embodiment of the present application.
Fig. 7 is a schematic diagram of a transfer mechanism for transferring a micro light emitting device to a display substrate according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The following disclosure provides many different embodiments, or examples, for implementing different features of the application. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the application.
Referring to fig. 1-7, an embodiment of the present application provides a transfer mechanism for transferring micro light emitting devices 210, the transfer mechanism includes a switch substrate 10 and a transfer assembly 20, and the transfer assembly 20 is disposed on the switch substrate 10.
The transfer member 20 includes a dielectric layer 21, an elastic filler layer 22, and an adsorption member 23.
The dielectric layer 21, the dielectric layer 21 is a flexible dielectric layer, and the dielectric layer 21 encloses a cavity 201. Specifically, the dielectric layer 21 is made of a flexible organic piezoelectric material, so that the dielectric layer 21 can be elastically deformed when an external force is applied.
As shown in fig. 1 and 2, the adsorption component 23 is disposed on an inner wall of the cavity 201 facing the surface of the switch substrate 10, and the adsorption component 23 is used for adsorbing and picking up or releasing the micro light emitting element 210.
The elastic filler layer 22 is filled in the cavity 201. The elastic filler layer 22 is used to provide sufficient space for the formation of the dielectric layer 21. Specifically, the material of the elastic filler layer 22 may be a metal nanomaterial capable of conducting electricity, such as at least one of aluminum, tungsten, titanium oxide, hafnium oxide, tantalum oxide, zirconium oxide, and aluminum oxide.
According to the transfer mechanism provided by the embodiment of the application, the transfer component 20 is arranged on the switch substrate 10, the cavity 201 is formed in the flexible dielectric layer 21 of the transfer component 20, the transfer component 20 is arranged on the inner wall of the cavity 201, and the elastic filling layer 22 is filled in the cavity 201. Because the surface of the micro light emitting element 210 and the surface of the dielectric layer 21 are both uneven structures, that is, the contact surface between the micro light emitting element 210 and the transfer mechanism is uneven, the arrangement of the dielectric layer 21 and the elastic filling layer 22 enables the elastic filling layer 22 to provide enough buffer space when the micro light emitting element 210 is adsorbed by the transfer assembly 20, so that the dielectric layer 21 can be elastically deformed, thereby increasing the contact area between the micro light emitting element 210 and the transfer mechanism, increasing the adsorption force between the micro light emitting element 210 and the transfer mechanism, and further improving the yield of the transfer mechanism in the process of transferring the micro light emitting element 210.
In some embodiments, the dielectric layer 21 includes a bottom surface 212 and a side surface 211, the bottom surface 212 is a surface facing away from the switch substrate 10, i.e. a surface facing the micro light emitting device 210, the side surface 211 is surrounded on an edge of the bottom surface 212, and an internal angle between the side surface 211 and the bottom surface 212 is arranged at an obtuse angle.
Illustratively, when the dielectric layer 21 has a truncated cone structure, the radius thereof gradually becomes smaller in a direction approaching the micro light emitting element 210. Compared with the structure with equal width such as a cylinder, the structure of the dielectric layer 21 can enable the dielectric layer 21 to be difficult to scratch other structures on the display substrate 200 when the micro light emitting element 210 is transferred, especially when the micro light emitting element 210 is placed on the display substrate 200 after the micro light emitting element 210 is adsorbed, so that the display substrate 200 can be better protected.
In some embodiments, the surface of the dielectric layer 21 facing the micro light emitting element 210 is a plane, that is, the bottom surface 212 of the dielectric layer 21 is a plane, and by setting the ground surface to be a plane, the contact area between the dielectric layer and the micro light emitting element 210 is advantageously further increased, so as to further enhance the adsorption force of the adsorption component 23 on the micro light emitting element 210.
In some embodiments, the transfer mechanism further includes a piezoelectric layer 30.
The piezoelectric layer 30 is made of flexible organic piezoelectric material, and may specifically be at least one of quartz crystal, lithium gallate, lithium germanate, titanium germanate, iron transistor lithium niobate, lithium tantalate, barium titanate BT, lead zirconate titanate PZT, modified lead zirconate titanate, lead metaniobate, lead barium lithium niobate PBLN, modified lead titanate PT, and organic piezoelectric material such as polyvinylidene fluoride (PVDF).
Wherein the piezoelectric layer 30 is disposed between the switch substrate 10 and the transfer member 20. In the embodiment of the present application, the dielectric layer 21 and the piezoelectric layer 30 are made of insulating materials, and when pressure is applied, the sensor is only a film thickness change, so that the sensor is a capacitive pressure sensor, so that the transfer component 20 can realize a detection function, for example, whether the binding of the micro light emitting element 210 is good or not is detected by the capacitive pressure sensor.
Illustratively, when the metal nano-material of the elastic filling layer 22 is disposed in the dielectric layer 21, conductive particles are distributed in the dielectric layer 21, and no conductive particles are disposed in the piezoelectric layer 30, then only the thickness of the dielectric layer 21 changes when the pressure is small, and when the pressure is large, the piezoelectric layer 30 deforms, wherein the conductive particles gradually gather to contact and generate a conductive effect, so that the structure forms a capacitive-resistive pressure sensor combining capacitance and resistance.
In some embodiments, the piezoelectric layer 30 is disposed on a surface of the gate layer 13, the gate layer 13 serves as a contact electrode layer for the piezoelectric layer 30, and the piezoelectric layer 30 is disposed between the gate layer 13 and the protective layer 40. The piezoelectric layer 30 contacts with the gate layer 13, so that pressure generated between the piezoelectric layer 30 and the transferred micro light emitting element 210 can be converted into an electrical signal of the gate layer 13, and then the signal is output through the switch substrate 10 controlled by the gate layer 13, thereby realizing signal detection.
In some embodiments, as shown in fig. 5, the transfer mechanism further includes a detection control circuit 102 and a suction control circuit 101, where the detection control circuit 102 and the suction control circuit 101 are electrically connected to the switch substrate 10, respectively.
The switch substrate 10 can control the piezoelectric layer 30 through the adsorption control circuit 101 to realize real-time detection of binding of the light emitting element of the micro light emitting element 210 on the display substrate 200.
As shown in fig. 6 and 7, in particular, since the piezoelectric layer 30 is made of a piezoelectric material, the binding condition of the micro light emitting element 210 generates a tensile or compressive force on the piezoelectric material during the transfer process, and the piezoelectric material generates a voltage according to the tensile or compressive force, thereby changing the electrical properties of the thin film transistor in the switch substrate 10 and generating or changing an electrical signal. Thus, when the micro light emitting element 210 is picked up by the transfer module 20, the transfer mechanism can confirm whether the micro light emitting element 210 is properly picked up by the transfer module 20 or whether the micro light emitting element 210 itself has a defect or a defect. The transfer mechanism can also detect the binding condition of the micro light emitting element 210 on the display substrate 200, so that when the transfer mechanism contacts the display substrate 200, resistance can be generated at the point where the micro light emitting element 210 exists, resistance can not be generated at the point where the micro light emitting element 210 does not exist, and the difference of the electrical signals can be fed back to the system for repairing.
When the transfer mechanism binding the micro light emitting element 210 contacts with the display backboard, the transfer mechanism can detect the combination condition of the micro light emitting element 210 and the display backboard in real time through the piezoelectric signal, and the transfer mechanism can further adjust in real time to avoid overlarge or overlarge binding force of the micro light emitting element 210 and avoid transfer failure or crush injury. The transfer mechanism can also confirm whether the micro light emitting element 210 is properly placed in the target location and whether the micro light emitting element 210 is being carried over or otherwise defective when the transfer set 20 is removed.
In addition, the transfer mechanism can identify the combination condition of the micro light emitting elements 210 and repair the micro light emitting elements in a targeted manner, if the micro light emitting elements 210 at a certain position fail to be combined, the transfer mechanism can locate the failed position after identification, and the corresponding micro light emitting elements 210 can be selectively picked up for repair in the next binding.
In some embodiments, the transfer mechanism further includes a protective layer 40. The protective layer 40 is disposed between the piezoelectric layer 30 and the transfer set 20.
Specifically, the protective layer 40 is made of an insulating material. The protective layer 40 may be one of inorganic insulating materials, for example, a silicon compound such as SiOx, siNx, siNx, siOx, siNOx, or one of organic insulating materials such as PS, PVP, PMMA, PVC, PP, PE. A protective layer 40 is deposited over the piezoelectric layer 30 to increase the stability of the device.
Specifically, in some embodiments, the protection layer 40 is disposed on the surfaces of the source/drain layer 14 and the piezoelectric layer 30.
In some embodiments, a plurality of Thin Film Transistors (TFTs) arranged in an array are disposed on the switching substrate 10. The TFT array may have different structures and materials, and the TFT may be an oxide semiconductor TFT, a silicon-based TFT, or the like, which is not particularly limited herein.
Specifically, the switch substrate 10 includes a base 11, an active layer 12, a gate layer 13, and a source-drain layer 14 sequentially disposed along a direction away from the base 11, the source-drain layer 14 including a source and a drain, the source and the drain being disposed in the same layer.
In some embodiments, the adsorption assembly 23 comprises one of an electrostatic electrode, a coil, or an adhesive glue.
Specifically, the adsorption component 23 is disposed on the inner wall of the dielectric layer 21, and the adsorption of the adsorption component 23 to the micro light emitting element 210 may be via mechanical force (e.g. adhesion force) or electromagnetic force (e.g. electrostatic force or electrostatic force increased by ac voltage of the bipolar electrode), etc.
The adsorption unit 23 is connected to the adsorption control circuit 101 through the piezoelectric layer 30 on the switch substrate 10, and the adsorption unit 23 may be an electrostatic adsorption unit 23 or an electromagnetic adsorption unit 23, and the micro light emitting element 210 is adsorbed by the adsorption force. The electrostatic chuck assembly 23 may be the electrostatic chuck assembly 23 having a bipolar structure. Illustratively, the adsorption assembly 23 includes a pair of silicon electrodes. When the micro light emitting element 210 is required to be picked up from the source substrate, the adsorption component 23 contacts the micro light emitting element 210 to be transferred, a positive voltage is applied to one silicon electrode of the adsorption component 23, the micro light emitting element 210 is adsorbed on the adsorption component 23, and when the micro light emitting element 210 is required to be placed at a target position of the display substrate, a negative voltage is applied to the other silicon electrode, so that the adsorbed micro light emitting element 210 can be released, and the transfer is completed.
The adsorption component 23 of the electromagnetic adsorption type transfer mechanism can comprise a conductive coil, and the magnetic property is controlled by controlling the current of the conductive coil, so that the pick-up and release of the micro-luminous element are realized.
Wherein, the adhesive glue material is one of water glass, synthetic resin, synthetic rubber and other materials.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
In the implementation, each unit or structure may be implemented as an independent entity, or may be implemented as the same entity or several entities in any combination, and the implementation of each unit or structure may be referred to the foregoing method embodiments and will not be repeated herein.
The foregoing describes in detail a transfer mechanism provided by an embodiment of the present application, and specific examples are applied to illustrate principles and implementations of the embodiment of the present application, where the illustration of the foregoing embodiment is only for helping to understand the technical solution and core ideas of the embodiment of the present application; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Claims (10)
1. A transfer mechanism for transferring micro light emitting elements, the transfer mechanism comprising: switch base plate and transfer subassembly, transfer subassembly set up in switch base plate is last, transfer subassembly includes:
the dielectric layer is arranged on the switch substrate, is a flexible dielectric layer and is internally provided with a cavity;
the adsorption component is arranged on the inner wall of one surface of the cavity facing the switch substrate;
the elastic filling layer is filled in the cavity, and the elastic filling layer is made of metal nano materials.
2. The transfer mechanism of claim 1, wherein the dielectric layer comprises a bottom surface and a side surface, the bottom surface is a surface facing away from the switch substrate, the side surface surrounds an edge of the bottom surface, and an interior angle between the side surface and the bottom surface is arranged at an obtuse angle.
3. The transfer mechanism of claim 2, wherein the bottom surface of the dielectric layer is planar.
4. The transfer mechanism of claim 1, further comprising:
and the piezoelectric layer is arranged between the switch substrate and the transfer component.
5. The transfer mechanism of claim 4, further comprising:
and the protective layer is arranged between the piezoelectric layer and the transfer assembly and is made of an insulating material.
6. The transfer mechanism of claim 5, wherein the switch substrate comprises a base and gate and source drain layers disposed sequentially in a direction away from the base.
7. The transfer mechanism of claim 6, wherein the piezoelectric layer is disposed on a surface of the gate electrode, the piezoelectric layer being disposed between the gate electrode and the protective layer.
8. The transfer mechanism of claim 7, wherein the protective layer is disposed on a surface of the source-drain layer and the piezoelectric layer.
9. The transfer mechanism of any one of claims 1-8, wherein the transfer mechanism further comprises: the detection control circuit and the adsorption control circuit are respectively and electrically connected with the switch substrate.
10. The transfer mechanism of any one of claims 1-8, wherein the suction assembly comprises one of an electrostatic electrode, a coil, or an adhesive glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110968534.3A CN113745130B (en) | 2021-08-23 | 2021-08-23 | Transfer mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110968534.3A CN113745130B (en) | 2021-08-23 | 2021-08-23 | Transfer mechanism |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113745130A CN113745130A (en) | 2021-12-03 |
| CN113745130B true CN113745130B (en) | 2023-10-17 |
Family
ID=78732257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110968534.3A Active CN113745130B (en) | 2021-08-23 | 2021-08-23 | Transfer mechanism |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113745130B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN208538814U (en) * | 2018-06-25 | 2019-02-22 | 江西兆驰半导体有限公司 | It is a kind of for micro-led transfer head array |
| CN110323307A (en) * | 2018-03-30 | 2019-10-11 | 普因特工程有限公司 | Micro- light emitting diode transfer system |
| CN111293070A (en) * | 2020-02-28 | 2020-06-16 | 南京中电熊猫平板显示科技有限公司 | Bipolar electrostatic suction head of miniature light-emitting diode and array thereof |
| CN112997288A (en) * | 2020-09-22 | 2021-06-18 | 泉州三安半导体科技有限公司 | Imprinting for light emitting diode transfer and transfer method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102442612B1 (en) * | 2016-02-19 | 2022-09-14 | 삼성디스플레이 주식회사 | Method for transferring light emitting diode |
-
2021
- 2021-08-23 CN CN202110968534.3A patent/CN113745130B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110323307A (en) * | 2018-03-30 | 2019-10-11 | 普因特工程有限公司 | Micro- light emitting diode transfer system |
| CN208538814U (en) * | 2018-06-25 | 2019-02-22 | 江西兆驰半导体有限公司 | It is a kind of for micro-led transfer head array |
| CN111293070A (en) * | 2020-02-28 | 2020-06-16 | 南京中电熊猫平板显示科技有限公司 | Bipolar electrostatic suction head of miniature light-emitting diode and array thereof |
| CN112997288A (en) * | 2020-09-22 | 2021-06-18 | 泉州三安半导体科技有限公司 | Imprinting for light emitting diode transfer and transfer method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113745130A (en) | 2021-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10153322B2 (en) | Organic light emitting display device | |
| KR101291845B1 (en) | Organic light emitting diodes display device and method of manufacturing the same | |
| US11616043B2 (en) | Chip transfer method, display device, chip and target substrate | |
| EP3621313A2 (en) | Display device and method of driving the same | |
| WO2020249005A1 (en) | Display panel and display device | |
| WO2020249009A1 (en) | Display panel and display device | |
| US20140124803A1 (en) | Display panel, chip on film and display device including the same | |
| KR20160089009A (en) | Organic light emitting diode display | |
| US8581294B2 (en) | Organic light emitting diode (OLED) display | |
| KR101056435B1 (en) | Anisotropic conductive film and display device including same | |
| CN103426827A (en) | Semiconductor active matrix structure and method for manufacturing same | |
| US9768411B2 (en) | Organic light emitting display apparatus and manufacturing method thereof | |
| US20140014915A1 (en) | Dual mode display devices and methods of manufacturing the same | |
| KR20110024552A (en) | Display device | |
| US20210305073A1 (en) | Transfer structure and manufacturing method thereof, transfer device and manufacturing method thereof | |
| KR20160028581A (en) | Display apparatus | |
| US10910254B2 (en) | Transfer device | |
| TW201225284A (en) | Organic light emitting diode display | |
| KR20190078842A (en) | Flexible display device | |
| CN113745130B (en) | Transfer mechanism | |
| US10305051B2 (en) | Flexible display device and method of manufacturing the same | |
| US9634068B2 (en) | Organic light emitting display devices and methods of manufacturing organic light emitting display devices | |
| KR101094281B1 (en) | Display device and method for menufacturing display device | |
| CN111276521A (en) | Flexible display module and display device | |
| KR20130077015A (en) | Flexible organic light emitting display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |