CN113690149A - Chip bonding structure, method and equipment - Google Patents
Chip bonding structure, method and equipment Download PDFInfo
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- CN113690149A CN113690149A CN202010060049.1A CN202010060049A CN113690149A CN 113690149 A CN113690149 A CN 113690149A CN 202010060049 A CN202010060049 A CN 202010060049A CN 113690149 A CN113690149 A CN 113690149A
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- sensitive adhesive
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- conductive pressure
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 136
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 26
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 26
- 238000002788 crimping Methods 0.000 claims description 25
- 238000003825 pressing Methods 0.000 claims description 13
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 2
- 239000000463 material Substances 0.000 description 23
- 230000001070 adhesive effect Effects 0.000 description 15
- 239000000853 adhesive Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/802—Applying energy for connecting
- H01L2224/80201—Compression bonding
Abstract
The invention provides a chip bonding structure, which comprises a target substrate and a plurality of chips; any chip in the plurality of chips comprises an electrode arranged at the bottom, and a bonding pad corresponding to the electrode is arranged on the target substrate; the electrodes are bonded with the corresponding bonding pads on the basis of the conductive parts, and the conductive parts are made of conductive pressure-sensitive adhesive. The chip bonding structure has the characteristics of simple bonding process, high bonding success rate and the like. In addition, the invention also provides a chip bonding method and equipment.
Description
Technical Field
The invention relates to the field of chip processing, in particular to a chip bonding structure, a method and equipment.
Background
When the Micro chip is transferred by the Stamp method, the transfer operation is performed by contact between PDMS and the chip, mainly using the viscosity characteristic of PDMS (polydimethylsiloxane).
After the chip is transferred to the target substrate, a thermosetting bonding material (e.g., ACF anisotropic conductive adhesive) is generally used in the industry to bond the electrode of the chip and the bonding pad on the target substrate, and due to the inherent characteristics of the thermosetting bonding material, a thermocompression bonding process is required to achieve the bonding operation.
Because the heat-resistant temperature of PDMS is low, after the transfer operation of the chip is completed by using PDMS, the bonding between the chip and the target substrate is performed by using a heat-resistant thermal head, which is cumbersome.
Meanwhile, since PDMS transfers a chip based on viscosity, when PDMS is switched to a thermal head, PDMS easily picks up the chip transferred in place, and a secondary transfer operation needs to be performed on the picked-up chip.
In addition, when the bonding operation is realized by adopting a hot-press bonding process, partial chips are preheated and hardened in advance in the bonding process due to the heat conduction of the substrate, so that the local poor welding is caused, and the whole target substrate is scrapped; when thermosetting bonding materials such as ACF anisotropic conductive adhesive are used as bonding materials, not only is the operation requirement on temperature, but also the acting force between an electrode and a bonding pad has certain operation requirement, and the bonding pressure between the electrode and the bonding pad is usually more than 50MPa, so that the conductive particles can break through the constraint of an outer-layer insulating material to realize the conductive function of the bonding materials; the requirement of the bonding equipment is harsh due to the excessively high bonding pressure, and the success rate of the bonding operation is difficult to ensure and the product yield is low when a plurality of chips are simultaneously bonded.
Disclosure of Invention
In order to overcome the problems in the existing Micro chip transfer operation and bonding operation, the invention provides a chip bonding structure, a method and equipment.
Correspondingly, the invention provides a chip bonding structure, which comprises a target substrate and a plurality of chips;
any one of the plurality of chips comprises an electrode, and a bonding pad corresponding to the electrode is arranged on the target substrate;
the electrodes are bonded with the corresponding bonding pads on the basis of the conductive parts, and the conductive parts are made of conductive pressure-sensitive adhesive.
In an alternative embodiment, the conductive pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive, a polyurethane pressure-sensitive adhesive, or a polyacrylate pressure-sensitive adhesive.
In an optional embodiment, the chip bonding structure further includes a plurality of conductive pressure-sensitive adhesive films; any one of the plurality of conductive pressure-sensitive adhesive films is provided with at least one conductive part;
the conductive pressure-sensitive adhesive films cover the corresponding one or more bonding pads respectively, and the electrodes are bonded with the corresponding bonding pads based on the corresponding conductive parts on the conductive pressure-sensitive adhesive films.
In an optional implementation manner, the number of electrodes on any one of the plurality of chips is two, the two electrodes are respectively a first electrode and a second electrode, a first pad corresponding to the first electrode is disposed on the substrate, and a second pad corresponding to the second electrode is disposed on the substrate; the conductive part comprises a first conductive part and a second conductive part, the first electrode is bonded with the first pad based on the first conductive part, and the second electrode is bonded with the second pad based on the second conductive part;
and a retaining wall is arranged between the first conductive part and the second conductive part corresponding to any one of the plurality of chips.
Correspondingly, the invention also provides a chip bonding method for bonding the chip bonding structure, which comprises the following steps:
disposing a conductive pressure sensitive adhesive on a pad of a target substrate;
transferring a chip onto the target substrate based on a transfer head, wherein the electrode position of the chip corresponds to the corresponding bonding pad position on the target substrate;
pressing the electrodes of the chips against the conductive pressure-sensitive adhesive on the corresponding pads by pressing the transfer head, the conductive pressure-sensitive adhesive forming conductive portions at the pressed positions.
In an alternative embodiment, the disposing a conductive pressure sensitive adhesive on a pad of a target substrate includes:
respectively attaching a conductive pressure-sensitive adhesive film to each bonding pad of the target substrate;
or dividing the bonding pads on the target substrate into a plurality of bonding pad areas, and respectively attaching a conductive pressure-sensitive adhesive film to each bonding pad area in the plurality of groups of bonding pad areas, wherein the conductive pressure-sensitive adhesive film covers all bonding pads of the corresponding bonding pad areas;
or covering a piece of conductive pressure-sensitive adhesive film on the target substrate, wherein the piece of conductive pressure-sensitive adhesive film covers all the pads.
In an alternative embodiment, when the conductive pressure-sensitive adhesive film is attached to each pad of the target substrate, the area of the conductive pressure-sensitive adhesive film is smaller than or equal to the area of the top surface of the corresponding pad.
Correspondingly, the invention also provides chip bonding equipment for implementing the chip bonding method, which comprises the following steps
Transferring a head: used for adsorbing the chip;
the transfer mechanism: the transfer head is driven to move, so that the chip on the transfer head is transferred to the corresponding position of the target substrate;
the crimping mechanism: and the pressure is used for pressurizing the transfer head so that the electrode of the chip is bonded with the corresponding bonding pad based on the conductive part.
In an alternative embodiment, the transfer mechanism includes a z-direction movement module; the crimping mechanism comprises a crimping driving module;
the crimping driving module is the z-direction moving module.
In an alternative embodiment, the transfer head comprises a buffer layer and a PDMS layer;
the PDMS layer is arranged on the crimping mechanism based on the buffer layer.
The invention provides a chip bonding structure, a method and equipment, wherein a bonding material of the chip bonding structure is replaced by a conductive pressure-sensitive adhesive from a thermosetting material in the traditional bonding process, the conductive pressure-sensitive adhesive can be cured at normal temperature, on one hand, the problem of poor local chip welding caused by a hot-pressing bonding process can be avoided, on the other hand, the heat resistance problem of a PDMS transfer head can be neglected and considered because heating is not needed in the bonding process, the PDMS transfer head not only can be used as the transfer head in the chip transfer process, but also can be used as a pressure welding head in the bonding process, so that the bonding process of a chip can be simplified, meanwhile, the switching of the PDMS transfer head is avoided, the success rate of chip bonding is improved, the secondary transfer of the chip is avoided, and the chip bonding structure has good practicability.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic diagram illustrating a chip bonding structure according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating a chip bonding structure according to a second embodiment of the present invention;
FIG. 3 is a schematic diagram of a chip bonding structure according to a third embodiment of the present invention;
FIG. 4 is a schematic diagram of a chip bonding structure according to a fourth embodiment of the present invention;
FIG. 5 is a schematic diagram of a chip bonding structure according to a fifth embodiment of the present invention;
FIG. 6 is a flow chart of a chip bonding method according to a sixth embodiment of the present invention;
fig. 7 shows a schematic three-dimensional structure diagram of a chip bonding apparatus according to a seventh embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
fig. 1 shows a schematic diagram of a chip bonding structure according to an embodiment of the present invention.
The embodiment of the invention provides a chip bonding structure, which comprises a target substrate 5 and a plurality of chips 1;
any one of the plurality of chips 1 includes an electrode 2 disposed at the bottom, specifically, in the embodiment of the present invention, the chip 1 is a flip chip, and the number of the electrodes 2 at the bottom of each chip 1 is two, and the two electrodes are a first electrode 201 and a second electrode 202, respectively.
The target substrate 5 is provided with a bonding pad 4 corresponding to the electrode 2; correspondingly, the pads 4 include a first pad 401 disposed corresponding to the first electrode 201 and a second pad 402 disposed corresponding to the second electrode 202.
The electrode 2 is bonded to the corresponding pad 4 based on the conductive portion 3, specifically, the first electrode 201 is bonded to the corresponding first pad 401 based on the first conductive portion 301, and the second electrode 202 is bonded to the corresponding second pad 402 based on the second conductive portion 302.
The conductive part 3 is made of conductive pressure-sensitive adhesive, specifically acrylic pressure-sensitive adhesive, polyurethane pressure-sensitive adhesive, and polyacrylate pressure-sensitive adhesive.
The conductive pressure-sensitive adhesive can be divided into a structural type and a doped type, the structural type conductive adhesive refers to a material containing a conductive functional group in the structure, the doped type conductive adhesive refers to a material with conductive performance added in an adhesive, and common materials with conductive performance comprise metal elements and non-metal elements, such as Au, Ag, Cu, Al, Fe, Zn, Ni, carbon black, graphene carbon nano tubes and other materials.
On the one hand, since the adhesive property of the conductive pressure-sensitive adhesive is determined by the viscoelastic property of the polymer, the polymer is elastically deformed and viscously flows under the action of external force, and the viscoelastic property enables the conductive pressure-sensitive adhesive to have the adhesive property sensitive to the external force. When the conductive pressure-sensitive adhesive is under the action of proper slow pressure, viscous flow similar to liquid is generated, so that the conductive pressure-sensitive adhesive is in close contact with the surfaces of the electrode and the pad and flows into the hollow grooves on the surfaces of the electrode and the pad, the effective contact area is increased, meanwhile, the distance between the conductive pressure-sensitive adhesive and the surfaces of the electrode and the pad reaches the molecular approach degree, sufficient interface adhesive force is generated by utilizing intermolecular force, and the connection strength of a chip on a target substrate can be ensured.
On the other hand, the conductive pressure-sensitive adhesive is an adhesive with pressure-sensitive bonding characteristics, and is usually in a semi-cured state, and when the conductive pressure-sensitive adhesive is used, only a small pressure needs to be applied to the conductive pressure-sensitive adhesive, so that conductive particles in the conductive pressure-sensitive adhesive form chemical bonds at first, and a good conductive loop is formed between a chip and a substrate.
The invention provides a chip bonding structure, wherein the material of a conductive part (namely bonding material) is replaced by conductive pressure-sensitive adhesive from thermosetting material in the traditional bonding process, the conductive pressure-sensitive adhesive can be cured at normal temperature, on one hand, the problem of poor local chip welding caused by a hot-pressing bonding process can be avoided, on the other hand, the heat resistance problem of a PDMS transfer head can be neglected and considered because heating is not needed in the bonding process, the PDMS transfer head not only can be used as the transfer head in the chip transfer process, but also can be used as a compression joint in the bonding process, so that the bonding process of chips can be simplified, and meanwhile, the switching of the PDMS transfer head is avoided, so that the success rate of chip bonding is improved, the secondary transfer of the chips is avoided, and the chip bonding structure has good practicability.
Specifically, the conductive pressure-sensitive adhesive is usually made of a film structure, and optionally, the chip bonding structure further includes a plurality of conductive pressure-sensitive adhesive films; any one of the plurality of conductive pressure-sensitive adhesive films is provided with at least one conductive part; the conductive pressure-sensitive adhesive films cover the corresponding one or more bonding pads respectively, and the electrodes are bonded with the corresponding bonding pads based on the corresponding conductive parts on the conductive pressure-sensitive adhesive films.
For the physical properties of the conductive pressure-sensitive adhesive in a pressed state, that is, in an uncompressed state, since the conductive particles do not form a conductive chemical bond, the conductive pressure-sensitive adhesive film is in an insulated state as a whole, and after the conductive pressure-sensitive adhesive film is pressed, the conductive chemical bond is formed at the pressed position of the conductive pressure-sensitive adhesive film (the uncompressed position is always insulated), and accordingly, the specific implementation of the conductive portion can be implemented with reference to the second to fourth embodiments.
Example two:
fig. 2 shows a schematic diagram of a chip bonding structure according to an embodiment of the invention.
The chip bonding structure of the embodiment of the invention further comprises a plurality of conductive pressure-sensitive adhesive films 6, each bonding pad 4 or the conductive part 3 corresponding to the electrode 2 is respectively arranged on one conductive pressure-sensitive adhesive film 6 of the plurality of conductive pressure-sensitive adhesive films 6, and the number of the conductive parts 3 on each conductive pressure-sensitive adhesive film 6 is one. Specifically, the conductive portion 3 needs to be formed by applying a certain pressure to the conductive pressure-sensitive adhesive.
Specifically, in the chip bonding structure according to the embodiment of the present invention, before bonding, a piece of conductive pressure-sensitive adhesive film 6 is correspondingly covered on each pad 4 on the substrate 5, and the electrode 2 of the chip 1 is opposite to the corresponding pad 4. Because the conductive pressure-sensitive adhesive film 6 after crimping can generate certain deformation, and part of the conductive pressure-sensitive adhesive overflows to the outside of the top surface of the pad, optionally, the area of the conductive pressure-sensitive adhesive film 6 can be smaller than or equal to the area of the top surface of the corresponding pad 4, thereby avoiding the short circuit problem caused by the overflow of the conductive pressure-sensitive adhesive.
During bonding, the electrode 2 on the chip 1 is in contact with the corresponding pad 4 based on the corresponding conductive pressure-sensitive adhesive film 6, then the conductive pressure-sensitive adhesive film 6 is pressed and deformed by applying a certain pressure on the chip 1, the conductive pressure-sensitive adhesive film 6 is completely attached to the bottom surface of the electrode 2 and the top surface of the pad 4, and conductive particles in the conductive pressure-sensitive adhesive film 6 form a chemical bond at first, so that a good conductive loop is formed between the electrode 2 and the pad 4.
Example three:
fig. 3 shows a schematic diagram of a chip bonding structure according to an embodiment of the invention.
Specifically, on the basis of the second embodiment, the chip bonding structure of the embodiment of the invention further includes a retaining wall 7, and the retaining wall 7 has a certain insulating property; the retaining wall 7 is arranged between the first conductive part and the second conductive part corresponding to any chip in the plurality of chips.
Since the first conductive portion and the second conductive portion are respectively provided on two sheets of conductive pressure-sensitive adhesive films (named as a first conductive pressure-sensitive adhesive film 601 and a second conductive pressure-sensitive adhesive film 602), the retaining wall 7 is provided between the first conductive pressure-sensitive adhesive film 601 and the second conductive pressure-sensitive adhesive film 602.
In particular, the distance between the first electrode 201 and the second electrode 202 for a chip is very small (the structure shown in the figure is for the sake of clarity to illustrate the chip bonding structure, the picture is somewhat enlarged), since the conductive pressure-sensitive adhesive film 6 is deformed when pressed and is easily extruded from the edge, if the extrusion amount or the extrusion volume is large, the first conductive pressure-sensitive adhesive film 601 and the second conductive pressure-sensitive adhesive film 602 corresponding to the chip are easy to contact to generate conductivity, so that the first electrode 201 and the second electrode 202 of the chip are short-circuited and failed, therefore, in order to avoid the occurrence of short circuit, by providing the retaining wall 7 between the first conductive pressure-sensitive adhesive film 601 and the second conductive pressure-sensitive adhesive film 602, the first conductive pressure-sensitive adhesive film 601 and the second conductive pressure-sensitive adhesive film 602 are blocked from a physical path, and the first conductive pressure-sensitive adhesive film 601 and the second conductive pressure-sensitive adhesive film 602 are prevented from contacting to cause short circuit.
Example four:
fig. 4 shows a schematic diagram of a chip bonding structure according to an embodiment of the invention.
In the embodiment of the present invention, the first conductive part 301 and the second conductive part 302 corresponding to any chip 1 in the plurality of chips 1 are disposed on the same conductive pressure sensitive adhesive film 8.
Specifically, every two of the bonding pads 4 on the substrate 5 form a group, and each group of the bonding pads 4 corresponds to the first electrode and the second electrode (positive electrode and negative electrode) of one chip 1 respectively. Since the conductive pressure-sensitive adhesive film 8 is insulated at the non-pressed position, in order to reduce the number of the conductive pressure-sensitive adhesive films and increase the convenience of operation in the specific implementation, the first conductive part 301 and the second conductive part 302 corresponding to any chip 1 may be optionally disposed on the same conductive pressure-sensitive adhesive film 8.
After bonding, since the conductive pressure-sensitive adhesive film 8 is pressed to form a conductive chemical bond only at the position corresponding to the electrode 2 and the pad 4, and the non-pressed position remains insulated, insulation is maintained between the first conductive part 301 and the second conductive part 302 although the conductive pressure-sensitive adhesive film 8 is simultaneously in contact with the two electrodes 2 of the chip 1.
In the specific implementation, by adopting the embodiment, the number of the conductive pressure-sensitive adhesive films can be half of that of the conductive pressure-sensitive adhesive films, so that the difficulty and complexity of the operation are greatly reduced, and the conductive pressure-sensitive adhesive films have good practicability.
Example five:
fig. 5 shows a schematic diagram of a chip bonding structure according to an embodiment of the invention.
On the basis of the fourth embodiment, further, all the conductive parts in the chip bonding structure are disposed on the same conductive pressure-sensitive adhesive film 9.
Based on the action principle similar to the fourth embodiment, by covering a piece of conductive pressure-sensitive adhesive film 9 on the pad 4 of the substrate 5, the chip 1 is pressed on the conductive pressure-sensitive adhesive film 9 corresponding to the position of the pad 4 through the electrode 2 to realize bonding (corresponding to each chip 1, the first conductive part 301 and the second conductive part 302 are correspondingly formed), on one hand, the alignment difficulty when the conductive pressure-sensitive adhesive film 9 is covered is reduced, on the other hand, the problems of missing and wrong pad pasting can be avoided to a great extent, and the method has good practicability.
Example six:
fig. 6 shows a flow chart of a chip bonding method according to an embodiment of the invention.
Correspondingly, the embodiment of the invention also provides a chip bonding method, which comprises the following steps:
s101: disposing a conductive pressure sensitive adhesive on a pad of a target substrate;
in the specific implementation, the conductive pressure-sensitive adhesive is processed in the form of a conductive pressure-sensitive adhesive film, and in the specific implementation, corresponding to the implementation modes of the second to the fifth examples, the following arrangement modes are adopted for arranging the conductive pressure-sensitive adhesive on the pad of the target substrate:
corresponding to the chip bonding structure of the second embodiment or the third embodiment, optionally, a conductive pressure-sensitive adhesive film is respectively attached to each pad of the target substrate; when the chip bonding structure of the second embodiment is adopted, in order to reduce the probability of short circuit of a chip, optionally, when a conductive pressure-sensitive adhesive film is attached to each pad of the target substrate, the area of the conductive pressure-sensitive adhesive film is smaller than or equal to the area of the top surface of the corresponding pad.
Or corresponding to the fourth embodiment or a chip bonding structure similar to the fourth embodiment, dividing the bonding pad on the target substrate into a plurality of bonding pad regions, and attaching a conductive pressure-sensitive adhesive film to each bonding pad region in the plurality of bonding pad regions, wherein the conductive pressure-sensitive adhesive film covers all bonding pads of the corresponding bonding pad region; optionally, the number of the bonding pads in each bonding pad area is two, and two bonding pads in the same bonding pad area correspond to the same chip respectively;
or corresponding to the chip bonding structure of the fifth embodiment, a piece of conductive pressure-sensitive adhesive film is covered on the target substrate, and the piece of conductive pressure-sensitive adhesive film covers all the pads.
S102: transferring a chip onto the target substrate based on a transfer head, wherein the electrode position of the chip corresponds to the conductive pressure-sensitive adhesive on the corresponding bonding pad on the target substrate;
specifically, assuming that a chip after sapphire is peeled off is fixed on a temporary substrate through a low-viscosity adhesive material, and the crimping head is kept at an initial position with a certain height, the transfer head is firstly contacted with the adhesive material, optionally, the adhesive material is a resin type material, and can have single-side viscosity, mainly for improving the viscosity of a lower layer (namely, a contact surface with the chip) of the transfer head, so as to ensure high-efficiency transfer yield, and the transfer head and the chip are accurately aligned through adjustment of an alignment mechanism. In specific implementation, the transfer head is generally a PDMS transfer head.
The viscidity of transfer head is greater than the cohesion between chip and the interim base plate after with the bonding material contact, then carries out the pushing down motion through the drive transfer head, makes the chip contact on transfer head bottom surface and the interim base plate, utilizes the viscidity of transfer head bottom surface to adsorb the chip, makes the chip break away from interim base plate, utilizes the chip of transfer head on with the interim base plate to adsorb.
Specifically, since the pressing operation of step S103 is generally accompanied by movement of the transfer head in the vertical direction, the chip transfer target position may be located above the target substrate; specifically, the purpose of this step is to transfer the chip to the position corresponding to the pad, so that the subsequent pressing operation can generate a pressing force between the electrode of the chip and the corresponding pad, which acts on the corresponding conductive pressure-sensitive adhesive, and the conductive pressure-sensitive adhesive forms a conductive portion at the pressed position.
S103: the electrodes of the chips are pressed against the corresponding conductive pressure-sensitive adhesive by pressing the transfer head, and the conductive pressure-sensitive adhesive forms a conductive portion at the pressed position.
Generally, the direct connection between the chip and the conductive pressure-sensitive adhesive can be realized when the pressing force of the transfer head is generally less than 50Mpa, a conductive part with good conductivity can be formed under the condition of ensuring enough bonding strength, and meanwhile, the pressing force of the transfer head is not too large, so that the chip can be well prevented from being damaged.
Specifically, after the transfer head moves to the preset position and the electrodes of the chips are opposite to the corresponding bonding pads, the transfer head is pressurized, so that the extrusion force generated between the electrodes of the chips and the corresponding bonding pads acts on the corresponding conductive pressure-sensitive adhesive films, and the conductive pressure-sensitive adhesive films form conductive parts at the pressed positions to enable the corresponding electrodes to be electrically communicated with the bonding pads.
Meanwhile, the conductive pressure-sensitive adhesive film is also responsible for adhering the chip on the target substrate, and the viscosity of the conductive pressure-sensitive adhesive film to the chip is greater than the viscosity between the chip and the transfer head, so that the chip cannot be taken out of the transfer head when the transfer head is separated from the target substrate.
Specifically, according to the chip bonding method provided by the embodiment of the invention, the conductive pressure-sensitive adhesive is used as the bonding material, on one hand, the whole bonding operation process is carried out at room temperature, poor bonding caused by heat conduction of the substrate in the traditional bonding mode can be avoided, meanwhile, the transfer head can be prevented from being replaced by a hot pressing head, the secondary chip transfer problem caused by switching of the transfer head can be avoided while the processing flow is simplified, on the other hand, the bonding operation process only needs the transfer head to participate in the operation, the process is simple and reasonable, the conductive pressure requirement of the conductive pressure-sensitive adhesive film is small, the bonding effect is good, and the method has good practicability.
Example seven:
fig. 7 shows a three-dimensional structure diagram of a chip bonding apparatus according to an embodiment of the invention.
The embodiment of the invention provides chip bonding equipment, which comprises
Transferring a head: used for adsorbing the chip;
the transfer mechanism: the device is used for driving the transfer head to move, so that the chip on the transfer head is transferred to the corresponding position of the target substrate;
the crimping mechanism: and the pressure is used for pressurizing the transfer head so that the electrode of the chip is bonded with the corresponding bonding pad based on the conductive part.
In particular, the embodiment of the present invention provides a specific implementation manner for reference.
Specifically, referring to fig. 7 of the drawings, an embodiment of the present invention provides a chip bonding apparatus, where the chip bonding apparatus includes a supporting table 101, a transfer head 106, a transfer mechanism, a crimping mechanism, and a distance measuring mechanism 107;
specifically, the support table 101 according to the embodiment of the present invention is used for supporting and fixing the target substrate 5 and the temporary substrate 102, and optionally, an adsorption unit may be disposed on the support table 101, and the adsorption unit is used for adsorbing and fixing the temporary substrate 102 and the target substrate 5.
Specifically, the temporary substrate 102 is used to temporarily fix the chip 1 after peeling off the sapphire by an adhesive material having a low viscosity.
Specifically, the target substrate 5 is the substrate 5 to which the chip is to be bonded.
Specifically, the transfer mechanism of the embodiment of the present invention is a three-axis transfer mechanism, and includes an x-direction moving module 109, a y-direction moving module 103, and a z-direction moving module 108; the y-direction moving module 103 moves along the y-direction of the illustrated direction, the x-direction moving module 109 is arranged on the y-direction moving module 103, and the x-direction moving module 109 can move along the x-direction; the z-direction moving module 108 is disposed on the x-direction moving module 109, and the z-direction moving module 108 itself is movable in the z-direction.
Specifically, the crimping mechanism includes a crimping head 104 and a crimping driving module, in an embodiment of the present invention, the z-direction moving module 108 is optionally a crimping driving module at the same time, specifically, the z-direction moving module 108 may employ a pressure element such as an air cylinder or a hydraulic cylinder, and a certain crimping force may be provided to the crimping head 104 while the z-direction movement of the crimping head 104 is driven.
Specifically, the transfer head 106 according to the embodiment of the present invention is a PDMS transfer head, which has a certain viscosity, and performs a transfer process by using contact between PDMS and a chip, and can be used as a pressure contact head to sufficiently press the chip and a pressure sensitive adhesive in a bonding process.
Specifically, since the transfer head 106 can perform bonding operation on a plurality of chips simultaneously in sequential operation, in order to ensure the bonding effect of each chip, the transfer head 106 according to the embodiment of the present invention is disposed on the pressure welding head based on the buffer layer 105, that is, the transfer head includes the buffer layer and the PDMS layer; the PDMS layer is arranged on the crimping mechanism based on the buffer layer.
Specifically, the buffer layer 105 is composed of elastic rubber components, and in the crimping process, the buffer layer structure is physically deformed under the action of pressure, so that the position height difference of the chips is flexibly adjusted, the deviation of the chips in the crimping process in the horizontal direction is absorbed, and the uniformity of the pressure applied to each chip in the bonding process can be ensured.
Specifically, the distance measuring mechanism 107 according to the embodiment of the present invention is fixed to the side of the crimping head 104 and located above the support table. Alternatively, the distance measuring mechanism 107 may be composed of a displacement sensor for various lasers, and can measure the distance from a specific position to the substrate. In one embodiment, the displacement sensor may be set to a height H, which is the height of the substrate distance measuring mechanism 107. When repeated bonding operation is carried out, the uniform initial height value is set, so that the pressing distance (pressing movement time) of the pressure joint in the multiple bonding process is kept consistent, and the pressure uniformity in the multiple bonding process is ensured.
In specific implementation, the transfer head 106 is driven by the transfer mechanism to move to a position above the temporary substrate 102, and then the transfer head 106 is driven by the z-direction moving module 108 to press down, so as to adsorb the chip 1 from the temporary substrate, where it should be noted that the adhesive force between the transfer head 106 and the chip is greater than the adhesive force between the chip 1 and the temporary substrate 102, so as to achieve the adsorption of the chip; then, the z-direction moving module 108 drives the transfer head 106 to ascend to a preset height (determined by the ranging mechanism 107), then the x-direction moving module 109 and the y-direction moving module 103 are matched to drive the transfer head 106 to move to the position above the preset position of the target substrate 5, then the z-direction moving module 108 drives the transfer head 106 to press down to the corresponding position of the target substrate 5, so that the electrode of the chip 1 is pressed on the conductive pressure sensitive adhesive on the corresponding bonding pad, and after a preset time, the z-direction moving module 108 drives the transfer head 106 to ascend and reset; it should be noted that, the process of pushing down the transfer head 106 by the z-direction moving module 108 is usually controlled based on time, so that each time the rising height of the z-direction moving module 108 is a fixed value, the same pushing time can be ensured for each operation in the same pushing time, thereby ensuring that the pressing effect between different chips can be kept relatively close, and having good practicability.
To sum up, the embodiments of the present invention provide a chip bonding structure, method and device, in which the bonding material of the chip bonding structure is replaced by a conductive pressure sensitive adhesive from a thermosetting material in the conventional bonding process, and the conductive pressure sensitive adhesive can be cured at normal temperature, so that on one hand, the problem of poor local chip welding caused by the thermocompression bonding process can be avoided, and on the other hand, the bonding process does not require heating, so as to neglect the heat resistance of the PDMS transfer head, and the PDMS transfer head can be used as a transfer head in the chip transfer process and a compression joint in the bonding process, thereby simplifying the bonding process of the chip, and simultaneously avoiding the switching of the PDMS transfer head, so as to improve the success rate of chip bonding and avoid the secondary transfer of the chip, and having good practicability.
The above detailed description is provided for a chip bonding structure, method and device according to the embodiments of the present invention, and the specific examples are applied herein to explain the principles and embodiments of the present invention, and the description of the above embodiments is only used to help understand the method and core ideas of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A chip bonding structure is characterized in that the chip bonding structure comprises a target substrate and a plurality of chips;
any one of the plurality of chips comprises an electrode, and a bonding pad corresponding to the electrode is arranged on the target substrate;
the electrodes are bonded with the corresponding bonding pads on the basis of the conductive parts, and the conductive parts are made of conductive pressure-sensitive adhesive.
2. The die bond structure of claim 1, wherein the conductive pressure sensitive adhesive is an acrylic pressure sensitive adhesive, a polyurethane pressure sensitive adhesive, or a polyacrylate pressure sensitive adhesive.
3. The die bond structure of claim 1, further comprising a plurality of sheets of conductive pressure sensitive adhesive films; any one of the plurality of conductive pressure-sensitive adhesive films is provided with at least one conductive part;
the conductive pressure-sensitive adhesive films cover the corresponding one or more bonding pads respectively, and the electrodes are bonded with the corresponding bonding pads based on the corresponding conductive parts on the conductive pressure-sensitive adhesive films.
4. The die bonding structure of claim 1, wherein the number of electrodes of any one of the plurality of dies is two, and the two electrodes are a first electrode and a second electrode, respectively; a first bonding pad corresponding to the first electrode is arranged on the substrate, and a second bonding pad corresponding to the second electrode is arranged on the substrate; the first electrode is bonded with the first pad based on a first conductive part, and the second electrode is bonded with the second pad based on a second conductive part;
and a retaining wall is arranged between the first conductive part and the second conductive part corresponding to any one of the plurality of chips.
5. A die bonding method for bonding the die bonding structure of any one of claims 1 to 4, the die bonding method comprising:
disposing a conductive pressure sensitive adhesive on a pad of a target substrate;
transferring a chip onto the target substrate based on a transfer head, wherein the electrode position of the chip corresponds to the corresponding bonding pad position on the target substrate;
pressing the electrodes of the chips against the conductive pressure-sensitive adhesive on the corresponding pads by pressing the transfer head, the conductive pressure-sensitive adhesive forming conductive portions at the pressed positions.
6. The die bonding method of claim 5, wherein disposing a conductive pressure sensitive adhesive on the pad of the target substrate comprises:
respectively attaching a conductive pressure-sensitive adhesive film to each bonding pad of the target substrate;
or dividing the bonding pads on the target substrate into a plurality of bonding pad areas, and respectively attaching a conductive pressure-sensitive adhesive film to each bonding pad area in the plurality of groups of bonding pad areas, wherein the conductive pressure-sensitive adhesive film covers all bonding pads of the corresponding bonding pad areas;
or covering a piece of conductive pressure-sensitive adhesive film on the target substrate, wherein the piece of conductive pressure-sensitive adhesive film covers all the pads.
7. The chip bonding method according to claim 6, wherein when the conductive pressure-sensitive adhesive film is attached to each of the pads of the target substrate, the area of the conductive pressure-sensitive adhesive film is smaller than or equal to the area of the top surface of the corresponding pad.
8. Chip bonding apparatus for carrying out the chip bonding method according to any one of claims 5 to 7, comprising
Transferring a head: used for adsorbing the chip;
the transfer mechanism: the transfer head is used for driving the transfer head to move, so that the chip on the transfer head is transferred to the corresponding position of the target substrate;
the crimping mechanism: and the pressure is used for pressurizing the transfer head so that the electrode of the chip is bonded with the corresponding bonding pad based on the conductive part.
9. The chip bonding apparatus of claim 8, wherein the transfer mechanism includes a z-direction movement module; the crimping mechanism comprises a crimping driving module;
the crimping driving module is the z-direction moving module.
10. The chip bonding apparatus of claim 8, wherein the transfer head comprises a buffer layer and a PDMS layer;
the PDMS layer is arranged on the crimping mechanism based on the buffer layer.
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| CN202010060049.1A CN113690149A (en) | 2020-05-16 | 2020-05-16 | Chip bonding structure, method and equipment |
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| CN202010060049.1A CN113690149A (en) | 2020-05-16 | 2020-05-16 | Chip bonding structure, method and equipment |
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Cited By (1)
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| CN115274942A (en) * | 2022-08-02 | 2022-11-01 | 厦门大学 | Transfer method of miniature flip chip |
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