CN112071795A - Transfer method of Micro-LED chip - Google Patents

Transfer method of Micro-LED chip Download PDF

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Publication number
CN112071795A
CN112071795A CN202010947974.6A CN202010947974A CN112071795A CN 112071795 A CN112071795 A CN 112071795A CN 202010947974 A CN202010947974 A CN 202010947974A CN 112071795 A CN112071795 A CN 112071795A
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micro
led chips
substrate
electrodes
led
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CN202010947974.6A
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Chinese (zh)
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陆骅俊
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention provides a transfer method of a Micro-LED chip, which comprises the following steps: providing a first substrate, wherein a plurality of first electrodes are arranged on the first substrate; providing a second substrate, wherein a plurality of first Micro-LED chips are arranged on the second substrate, and the plurality of first Micro-LED chips are arranged corresponding to the plurality of first electrodes; bonding a plurality of the first Micro-LED chips to a plurality of the first electrodes; and removing the second substrate. According to the transfer method of the Micro-LED chip, the transfer efficiency and the transfer precision of the first Micro-LED chip are improved, so that the production period and the yield of the finally manufactured Micro-LED display are improved, the manufacturing cost of the Micro-LED display is saved, and the Micro-LED display is suitable for mass production.

Description

Transfer method of Micro-LED chip
Technical Field
The invention relates to the technical field of display, in particular to a transfer method of Micro-LED chips.
Background
A Micro-Light Emitting Diode (Micro-LED) display is a self-luminous display using a Micro-LED chip as a pixel, and has the advantages of high brightness, high Light Emitting efficiency, low power consumption, and the like, and thus gradually becomes a new standard for the development in the industry.
Micro-LED displays are typically manufactured by transferring a large number of Micro-LED chips onto a substrate using a mass transfer technique, wherein the mass is used to represent a large number, such as thousands or even more. However, the existing bulk transfer technology has a big problem that the transfer efficiency and the transfer accuracy of the bulk Micro-LED chips are low, which results in long production cycle and low yield of the finally manufactured Micro-LED display.
Disclosure of Invention
Therefore, there is a need to provide a method for transferring Micro-LED chips, which solves the problems of low transfer efficiency and transfer precision during the transfer process of the Micro-LED chips, resulting in long production cycle and low yield of the finally manufactured Micro-LED display.
The invention provides a transfer method of a Micro-LED chip, which comprises the following steps:
providing a first substrate, wherein a plurality of first electrodes are arranged on the first substrate;
providing a second substrate, wherein a plurality of first Micro-LED chips are arranged on the second substrate, and the plurality of first Micro-LED chips are arranged corresponding to the plurality of first electrodes;
bonding a plurality of the first Micro-LED chips to a plurality of the first electrodes;
and removing the second substrate.
In some embodiments, before said step of "bonding a plurality of said first Micro-LED chips to a plurality of said first electrodes", said method of transferring Micro-LED chips further comprises:
and placing the first Micro-LED chips on the first electrodes by adopting an adsorption technology.
In some embodiments, the adsorption technique is vacuum adsorption, electrostatic force adsorption, van der waals force adsorption, magnetic adsorption, or self-assembly adsorption.
In some embodiments, the step of "bonding a plurality of the first Micro-LED chips to a plurality of the first electrodes" is specifically:
and bonding the first Micro-LED chips and the first electrodes by using a flip chip bonding technology.
In some embodiments, the first substrate is an array substrate.
In some embodiments, the first electrode is a copper pad.
In some embodiments, the first electrodes and the first Micro-LED chips are arranged in an array.
In some embodiments, a plurality of second electrodes are further disposed on the first substrate;
after the step of "removing the second substrate", the method for transferring Micro-LED chips further comprises the steps of:
providing a third substrate, wherein a plurality of second Micro-LED chips are arranged on the third substrate, and the plurality of second Micro-LED chips and the plurality of second electrodes are arranged correspondingly;
bonding a plurality of the second Micro-LED chips to a plurality of the second electrodes;
and removing the third substrate.
In some embodiments, a plurality of third electrodes are further disposed on the first substrate;
after the step of "removing the third substrate", the method for transferring Micro-LED chips further comprises the steps of:
providing a fourth substrate, wherein a plurality of third Micro-LED chips are arranged on the fourth substrate, and the plurality of third Micro-LED chips and the plurality of third electrodes are arranged correspondingly;
bonding a plurality of the third Micro-LED chips to a plurality of the third electrodes;
and removing the fourth substrate.
In some embodiments, the first plurality of Micro-LED chips emit light of the same color, the second plurality of Micro-LED chips emit light of the same color, and the third plurality of Micro-LED chips emit light of the same color, and the first, second, and third Micro-LED chips emit light of different colors.
According to the Micro-LED chip transfer method, the plurality of first Micro-LED chips and the plurality of first electrodes are correspondingly arranged, so that the plurality of first Micro-LED chips can be transferred onto the plurality of first electrodes at one time, and the transfer efficiency of the first Micro-LED chips is improved; meanwhile, in the transferring process, the plurality of first Micro-LED chips and the plurality of first electrodes can be completely aligned only by aligning a small number of first Micro-LED chips with a small number of first electrodes, so that the transferring precision of the first Micro-LED chips is improved. Particularly, in the process of mass transfer, the transfer efficiency and the transfer precision of the first Micro-LED chip are improved, so that the production period and the yield of the finally manufactured Micro-LED display are improved, the manufacturing cost of the Micro-LED display is saved, and the Micro-LED display is suitable for mass production.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a flow chart of a transferring method of Micro-LED chips according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a first substrate according to an embodiment of the invention.
Fig. 3 is a schematic structural diagram of a second substrate according to an embodiment of the invention.
Fig. 4 is a schematic structural diagram of a second first substrate according to an embodiment of the invention.
Fig. 5 is a schematic structural diagram of a third substrate according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram of a third first substrate according to an embodiment of the invention.
Fig. 7 is a schematic structural diagram of a fourth substrate according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a flowchart of a transfer method of a Micro-LED chip according to an embodiment of the present invention, and as shown in fig. 1, the transfer method of the Micro-LED chip includes the following steps:
in step S1, a first substrate 10 is provided, and the first substrate 10 is provided with a plurality of first electrodes 101.
Fig. 2 is a schematic structural diagram of a first substrate according to an embodiment of the present invention, and the first substrate 10 shown in fig. 2 is preferably an array substrate, that is, a glass substrate after an array (array) process. The first substrate 10 is provided with a plurality of first electrodes 101 (blank boxes), and the first electrodes 101 are preferably copper pads.
Step S2, providing a second substrate 20, wherein the second substrate 20 is provided with a plurality of first Micro-LED chips 201, and the plurality of first Micro-LED chips 201 are disposed corresponding to the plurality of first electrodes 101.
Fig. 3 is a schematic structural diagram of a second substrate according to an embodiment of the present invention, in which a plurality of first Micro-LED chips 201 are disposed on the second substrate 20 shown in fig. 3, and the first Micro-LED chips 201 are devices capable of emitting light of a specific color.
The light emitted by the plurality of first Micro-LED chips 201 may be of the same color, e.g., all emit red light, or all emit green light, or all emit blue light. The colors of the light emitted from the plurality of first Micro-LED chips 201 may also be different, for example, the plurality of first Micro-LED chips 201 are divided into three types according to the different colors of the emitted light, wherein the first Micro-LED chips 201 of the first type emit red light, the first Micro-LED chips 201 of the second type emit green light, and the first Micro-LED chips 201 of the third type emit blue light.
The plurality of first Micro-LED chips 201 are disposed corresponding to the plurality of first electrodes 101, that is, the arrangement of the plurality of first Micro-LED chips 201 on the second substrate 20 is completely the same as the arrangement of the plurality of first electrodes 101 on the first substrate 10.
In step S3, the first Micro-LED chips 201 are bonded to the first electrodes 101.
Specifically, the plurality of first Micro-LED chips 201 are aligned with the plurality of first electrodes 101, after the alignment is completed, the plurality of first Micro-LED chips 201 are placed on the plurality of first electrodes 101, and after the placement is completed, the plurality of first Micro-LED chips 201 are bonded with the plurality of first electrodes 101.
Because the plurality of first Micro-LED chips 201 are arranged corresponding to the plurality of first electrodes 101, the plurality of first Micro-LED chips 201 can be transferred to the plurality of first electrodes 101 at one time, and the transfer efficiency of the first Micro-LED chips 201 is improved; meanwhile, in the transferring process, only a small number of first Micro-LED chips 201 are aligned with a small number of first electrodes 101, so that the plurality of first Micro-LED chips 201 are completely aligned with the plurality of first electrodes 101, and the transferring precision of the first Micro-LED chips 201 is improved.
In step S4, the second substrate 20 is removed.
It should be noted that the number of the first electrodes 101 and the number of the first Micro-LED chips 201 may reach thousands or even more, where the plurality of first electrodes 101 are referred to as a huge first electrode 101, and the plurality of first Micro-LED chips 201 are referred to as a huge first Micro-LED chip 201, and at this time, the process of transferring the huge first Micro-LED chips 201 to the huge first electrode 101 in the first substrate 10 is a huge transfer process.
It can be understood that, in the process of mass transfer, since the transfer efficiency and the transfer precision of the first Micro-LED chip 201 are improved, the production cycle and yield of the finally manufactured Micro-LED display are improved, and the manufacturing cost of the Micro-LED display is saved, so that the Micro-LED display is suitable for mass production.
In some embodiments, prior to the step of bonding the plurality of first Micro-LED chips 201 with the plurality of first electrodes 101, the method of transferring the Micro-LED chips further comprises: a plurality of first Micro-LED chips 201 are disposed on the plurality of first electrodes 101 using an adsorption technique. Wherein the adsorption technology is vacuum adsorption, electrostatic force adsorption, van der waals force adsorption, magnetic adsorption or self-assembly adsorption.
In some embodiments, the step of "bonding the plurality of first Micro-LED chips 201 to the plurality of first electrodes 101" is specifically: the plurality of first Micro-LED chips 201 are bonded to the plurality of first electrodes 101 using a flip chip bonding technique.
Specifically, the flip chip bonding technology is a chip interconnection technology, and means that the first Micro-LED chip 201 and the first electrode 101 are bonded by using a gold ball instead of a wire, so as to achieve interconnection.
In some embodiments, the first substrate 10 is an array substrate, i.e., a glass substrate after an array (array) process, and the first electrode 101 on the first substrate 10 is a copper pad.
In some embodiments, the plurality of first electrodes 101 and the plurality of first Micro-LED chips 201 are arranged in an array.
Specifically, as shown in fig. 2 and 3, the plurality of first electrodes 101 are arranged in an array on the first substrate 10, and the plurality of first Micro-LED chips 201 are arranged in an array on the second substrate 20. Before bonding the first Micro-LED chips 201 with the first electrodes 101, it is only necessary to align the four first Micro-LED chips 201 at the four corners of the second substrate 20 with the four first electrodes 101 at the four corners of the first substrate 10, so that the first Micro-LED chips 201 are all aligned with the first electrodes 101, and the transfer accuracy of the first Micro-LED chips 201 is improved.
Fig. 4 is a schematic structural diagram of a second first substrate according to an embodiment of the present invention, and different from fig. 1, a plurality of second electrodes 102 (oblique-line filled boxes) are further disposed on the first substrate 10 shown in fig. 4. The transfer method of the Micro-LED chip further comprises the following steps:
first, a third substrate 30 is provided, a plurality of second Micro-LED chips 301 are disposed on the third substrate 30, and the plurality of second Micro-LED chips 301 and the plurality of second electrodes 102 are disposed correspondingly. Then, the plurality of second Micro-LED chips 301 are bonded to the plurality of second electrodes 102. Finally, the third substrate 30 is removed.
Fig. 5 is a schematic structural diagram of a third substrate according to an embodiment of the present invention, in which a plurality of second Micro-LED chips 301 are disposed on the third substrate 30 shown in fig. 5, and the second Micro-LED chips 301 are devices capable of emitting light of a specific color.
The plurality of second Micro-LED chips 301 and the plurality of second electrodes 102 are disposed correspondingly, that is, the arrangement of the plurality of second Micro-LED chips 301 on the third substrate 30 is completely the same as the arrangement of the plurality of second electrodes 102 on the first substrate 10.
The second Micro-LED chips 301 are aligned with the second electrodes 102, after the alignment is completed, the second Micro-LED chips 301 are placed on the second electrodes 102, and after the placement is completed, the second Micro-LED chips 301 are bonded to the second electrodes 102.
Because the plurality of second Micro-LED chips 301 are arranged corresponding to the plurality of second electrodes 102, the plurality of second Micro-LED chips 301 can be transferred to the plurality of second electrodes 102 at one time, thereby improving the transfer efficiency of the second Micro-LED chips 301; meanwhile, in the transferring process, only a small number of second Micro-LED chips 301 are aligned with a small number of second electrodes 102, so that the plurality of second Micro-LED chips 301 are completely aligned with the plurality of second electrodes 102, and the transferring precision of the second Micro-LED chips 301 is improved.
It should be noted that the number of the second electrodes 102 and the number of the second Micro-LED chips 301 may reach thousands or even more, where the plurality of second electrodes 102 are referred to as a huge second electrode 102, the plurality of second Micro-LED chips 301 are referred to as a huge second Micro-LED chip 301, and at this time, the process of transferring the huge second Micro-LED chips 301 to the huge second electrode 102 in the first substrate 10 is a huge transfer process.
It can be understood that, in the process of mass transfer, since the transfer efficiency and the transfer precision of the second Micro-LED chip 301 are improved, the production cycle and yield of the finally manufactured Micro-LED display are improved, and the manufacturing cost of the Micro-LED display is saved, so that the Micro-LED display is suitable for mass production.
Fig. 6 is a schematic structural diagram of a third first substrate according to an embodiment of the present invention, and different from fig. 4, a plurality of third electrodes 103 (boxes filled with cross lines) are further disposed on the first substrate 10 shown in fig. 6. The transfer method of the Micro-LED chip further comprises the following steps:
first, a fourth substrate 40 is provided, a plurality of third Micro-LED chips 401 are disposed on the fourth substrate 40, and the plurality of third Micro-LED chips 401 and the plurality of third electrodes 103 are disposed correspondingly. Then, the plurality of third Micro-LED chips 401 are bonded with the plurality of third electrodes 103. Finally, the fourth substrate 40 is removed.
Fig. 7 is a schematic structural view of a fourth substrate according to an embodiment of the present invention, in which a plurality of third Micro-LED chips 401 are disposed on the fourth substrate 40 shown in fig. 7, and the third Micro-LED chips 401 are devices capable of emitting light of a specific color.
The plurality of third Micro-LED chips 401 and the plurality of third electrodes 103 are disposed correspondingly, that is, the arrangement of the plurality of third Micro-LED chips 401 on the fourth substrate 40 is completely the same as the arrangement of the plurality of third electrodes 103 on the first substrate 10.
The third Micro-LED chips 401 are aligned with the third electrodes 103, after the alignment is completed, the third Micro-LED chips 401 are placed on the third electrodes 103, and after the placement is completed, the third Micro-LED chips 401 are bonded to the third electrodes 103.
Because the plurality of third Micro-LED chips 401 are arranged corresponding to the plurality of third electrodes 103, the plurality of third Micro-LED chips 401 can be transferred to the plurality of third electrodes 103 at one time, thereby improving the transfer efficiency of the third Micro-LED chips 401; meanwhile, in the transferring process, only a small number of third Micro-LED chips 401 are aligned with a small number of third electrodes 103, so that the plurality of third Micro-LED chips 401 are completely aligned with the plurality of third electrodes 103, and the transferring precision of the third Micro-LED chips 401 is improved.
It should be noted that the number of the third electrodes 103 and the number of the third Micro-LED chips 401 can reach thousands or even more, where the plurality of third electrodes 103 are referred to as a huge third electrode 103, the plurality of third Micro-LED chips 401 are referred to as a huge third Micro-LED chip 401, and at this time, the process of transferring the huge third Micro-LED chips 401 to the huge third electrode 103 in the first substrate 10 is a huge transfer process.
It can be understood that, in the process of mass transfer, since the transfer efficiency and the transfer precision of the third Micro-LED chip 401 are improved, the production cycle and yield of the finally manufactured Micro-LED display are improved, the manufacturing cost of the Micro-LED display is saved, and the Micro-LED display is suitable for mass production.
In some embodiments, the first plurality of Micro-LED chips 201 emit light of the same color, the second plurality of Micro-LED chips 301 emit light of the same color, the third plurality of Micro-LED chips 401 emit light of the same color, and the first, second, and third Micro-LED chips 201, 301, 401 emit light of different colors.
For example, the first plurality of Micro-LED chips 201 each emit red light, the second plurality of Micro-LED chips 301 each emit green light, and the third plurality of Micro-LED chips 401 each emit blue light.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. A transfer method of Micro-LED chips is characterized by comprising the following steps:
providing a first substrate, wherein a plurality of first electrodes are arranged on the first substrate;
providing a second substrate, wherein a plurality of first Micro-LED chips are arranged on the second substrate, and the plurality of first Micro-LED chips are arranged corresponding to the plurality of first electrodes;
bonding a plurality of the first Micro-LED chips to a plurality of the first electrodes;
and removing the second substrate.
2. The Micro-LED chip transfer method according to claim 1, wherein before said step of "bonding a plurality of said first Micro-LED chips to a plurality of said first electrodes", said Micro-LED chip transfer method further comprises:
and placing the first Micro-LED chips on the first electrodes by adopting an adsorption technology.
3. The transfer method of a Micro-LED chip according to claim 2, wherein the adsorption technique is vacuum adsorption, electrostatic force adsorption, van der waals force adsorption, magnetic adsorption or self-assembly adsorption.
4. A method for transferring Micro-LED chips as set forth in claim 1, wherein the step of "bonding a plurality of the first Micro-LED chips to a plurality of the first electrodes" is specifically:
and bonding the first Micro-LED chips and the first electrodes by using a flip chip bonding technology.
5. A transfer method for a Micro-LED chip according to claim 1, wherein the first substrate is an array substrate.
6. The transfer method for a Micro-LED chip according to claim 1, wherein the first electrode is a copper pad.
7. The Micro-LED chip transfer method of claim 1, wherein the plurality of first electrodes and the plurality of first Micro-LED chips are arranged in an array.
8. A transfer method of a Micro-LED chip according to claim 1, wherein a plurality of second electrodes are further provided on the first substrate;
after the step of "removing the second substrate", the method for transferring Micro-LED chips further comprises the steps of:
providing a third substrate, wherein a plurality of second Micro-LED chips are arranged on the third substrate, and the plurality of second Micro-LED chips and the plurality of second electrodes are arranged correspondingly;
bonding a plurality of the second Micro-LED chips to a plurality of the second electrodes;
and removing the third substrate.
9. A transfer method of a Micro-LED chip according to claim 8, wherein a plurality of third electrodes are further provided on the first substrate;
after the step of "removing the third substrate", the method for transferring Micro-LED chips further comprises the steps of:
providing a fourth substrate, wherein a plurality of third Micro-LED chips are arranged on the fourth substrate, and the plurality of third Micro-LED chips and the plurality of third electrodes are arranged correspondingly;
bonding a plurality of the third Micro-LED chips to a plurality of the third electrodes;
and removing the fourth substrate.
10. The method for transferring Micro-LED chips as set forth in claim 9, wherein a plurality of the first Micro-LED chips emit light of the same color, a plurality of the second Micro-LED chips emit light of the same color, a plurality of the third Micro-LED chips emit light of the same color, and the first Micro-LED chip, the second Micro-LED chip, and the third Micro-LED chips emit light of different colors.
CN202010947974.6A 2020-09-10 2020-09-10 Transfer method of Micro-LED chip Pending CN112071795A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108538971A (en) * 2018-03-23 2018-09-14 深圳雷曼光电科技股份有限公司 Transfer method and display device
CN109802018A (en) * 2019-03-27 2019-05-24 京东方科技集团股份有限公司 The production method of micro- LED array substrate
CN110610931A (en) * 2019-09-20 2019-12-24 中国科学院长春光学精密机械与物理研究所 Multi-color Micro LED partitioned batch preparation method
CN110767582A (en) * 2019-11-06 2020-02-07 广东工业大学 Transfer method of Micro-LED chip
US20200203319A1 (en) * 2018-12-20 2020-06-25 J-Metrics Technology Co., Ltd. Mass transfer method for micro light emitting diode and light emitting panel module using thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108538971A (en) * 2018-03-23 2018-09-14 深圳雷曼光电科技股份有限公司 Transfer method and display device
US20200203319A1 (en) * 2018-12-20 2020-06-25 J-Metrics Technology Co., Ltd. Mass transfer method for micro light emitting diode and light emitting panel module using thereof
CN109802018A (en) * 2019-03-27 2019-05-24 京东方科技集团股份有限公司 The production method of micro- LED array substrate
CN110610931A (en) * 2019-09-20 2019-12-24 中国科学院长春光学精密机械与物理研究所 Multi-color Micro LED partitioned batch preparation method
CN110767582A (en) * 2019-11-06 2020-02-07 广东工业大学 Transfer method of Micro-LED chip

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Application publication date: 20201211