CN110610931A - Multi-color Micro LED partitioned batch preparation method - Google Patents

Multi-color Micro LED partitioned batch preparation method Download PDF

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Publication number
CN110610931A
CN110610931A CN201910891281.7A CN201910891281A CN110610931A CN 110610931 A CN110610931 A CN 110610931A CN 201910891281 A CN201910891281 A CN 201910891281A CN 110610931 A CN110610931 A CN 110610931A
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color
micro led
micro
led array
coms
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Inventor
陶金
梁静秋
王惟彪
吕金光
秦余欣
李阳
赵永周
王家先
王浩冰
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00

Abstract

A multi-color Micro LED partitioned batch preparation method relates to the technical field of Micro electro mechanical systems, and solves the problems of assembly efficiency, yield, material cost and the like. S1, taking the LED epitaxial wafer of the ith color; s2, dividing the pixels into Micro LED arrays; preparing a metal electrode; carrying out partial Micro LED transfer on the Micro LED array of the ith color; s3, preparing an electrode structure by taking the COMS driving chip; s4, bonding a COMS driving chip and an i-th color Micro LED array; s5, carrying out laser lift-off to obtain a COMS substrate with a Micro LED; s6, if i ═ N, proceed to S7; otherwise, returning i' as i and the COMS substrate with the Micro LEDs as a COMS driving chip to S1; s7, preparing an isolation layer on the COMS substrate with the Micro LED; s8, preparing a transparent common electrode. The invention realizes the preparation of the Micro LED array with large batch, high efficiency, high yield and low cost.

Description

Multi-color Micro LED partitioned batch preparation method
Technical Field
The invention relates to the technical field of Micro electro mechanical systems, in particular to a multi-color Micro LED partitioned batch preparation method.
Background
The Micro LED is an abbreviation of Micro Light Emitting Diode (Micro LED), and is named as 'Micro LED' in Chinese. The Micro LED technology is to design the existing LED structure into a thin film, a Micro film and an array, and the size is only about 1-100 mu m grade. Micro LEDs currently outperform LCDs and OLEDs in terms of lifetime, contrast, power consumption, reaction time, and viewing angle. Thus Micro LEDs are considered to be the next generation of display technology. The traditional LED array preparation method based on the chip mounter cannot meet the technical requirements of small size and high density of Micro LEDs. The existing Micro LED preparation method comprises a magnetofluid-based self-assembly technology, an elastic seal-based batch transfer technology, an electrostatic adsorption-based batch transfer technology and the like. The prior art has certain problems in the aspects of assembly efficiency, yield, material cost and the like, and limits the application of the prior art in the production of actual products.
Disclosure of Invention
In order to solve the problems, the invention provides a multi-color Micro LED partitioned batch preparation method.
The multi-color Micro LED partitioned batch preparation method comprises the following steps:
s1, taking the LED epitaxial wafer of the ith color, wherein i is a positive integer, i is more than or equal to 1 and less than or equal to N, N is more than or equal to 3 and is a positive integer, and the LED epitaxial wafer of the ith color comprises a substrate of the ith color and an LED epitaxial layer of the ith color;
s2, dividing the pixels of the LED epitaxial layer of the ith color into Micro LED arrays of the ith color to obtain Micro LED epitaxial wafers of the ith color; preparing a metal electrode on the Micro LED array of the ith color; transferring the Micro LED array of the ith color for i-1 times or more;
s3, taking a COMS driving chip, and preparing an electrode structure on the COMS driving chip, wherein the electrode structure corresponds to the Micro LED array with the ith color obtained after S2, and the size and shape of the electrode structure are the same as those of the metal electrode on the Micro LED array with the ith color;
s4, carrying out wafer-level bonding on the COMS driving chip and the Micro LED array of the ith color;
s5, peeling the connection position of the Micro LED array of the ith color corresponding to the bonding position and the substrate of the ith color by using laser, and obtaining a COMS substrate with the Micro LEDs after peeling;
s6, if i is equal to N, S7 is performed; otherwise, returning the I' as i and the COMS substrate with the Micro LEDs as a COMS driving chip to S1;
s7, preparing an isolation layer on the COMS substrate with the Micro LEDs, wherein the isolation layer is positioned among the Micro LEDs with different colors, so that the COMS substrate with the isolation layer and the Micro LEDs is obtained;
and S8, preparing a transparent common electrode on the upper surface of the COMS substrate obtained in the S7 to obtain the Micro LED devices with N colors, wherein all the metal electrodes on the Micro LED devices with the N colors are identical in size and shape, and the adjacent metal electrodes are identical in spacing.
The invention has the beneficial effects that:
the multi-color Micro LED partitioned batch preparation method is based on wafer-level bonding and laser stripping technologies, and the partitioned batch preparation process realizes batch preparation of Micro LEDs by utilizing a wafer-level bonding process and an LED epitaxial layer stripping process with laser area selectivity, and has the advantages of high efficiency, high yield and low cost.
Drawings
FIG. 1 is a flow chart of a preparation method in an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of an epitaxy of a first color LED in an embodiment of the invention.
Fig. 3 is a schematic structural view of a Micro LED array formed after the LED pixel is divided in the embodiment of the present invention.
FIG. 4 is a schematic structural diagram of a metal electrode prepared on the Micro LED array of the 1 st color in the embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a CMOS driver chip according to an embodiment of the present invention.
Fig. 6 is a schematic view of a wafer-level bonding structure of a Micro LED array of the 1 st color and a CMOS driver chip according to an embodiment of the present invention.
FIG. 7 is a schematic diagram of the 1 st color Micro LED array zone laser lift-off in the embodiment of the present invention.
FIG. 8 is a schematic diagram of an embodiment of the present invention for fabricating an electrode structure on a CMOS substrate with a 1 st color Micro LED;
fig. 9 is a schematic wafer-level bonding diagram of a 2 nd color Micro LED array and a CMOS driver chip according to an embodiment of the invention.
FIG. 10 is a schematic diagram of the 2 nd color Micro LED array zone laser lift-off in the embodiment of the present invention.
FIG. 11 is a schematic diagram of an electrode on a CMOS substrate with two color Micro LEDs in accordance with an embodiment of the present invention.
Fig. 12 is a schematic wafer level bonding diagram of a 3 rd color Micro LED array and a CMOS driving substrate according to an embodiment of the present invention.
FIG. 13 is a schematic diagram of the 3 rd color Micro LED array zone laser lift-off in the embodiment of the present invention.
FIG. 14 is a schematic structural diagram of a spacer layer prepared in an embodiment of the invention.
Fig. 15 is a schematic structural view of the preparation of a transparent common electrode in the embodiment of the present invention.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
The multi-color Micro LED partition batch preparation method is used for preparing Micro LED devices with N colors, N is more than or equal to 3, and N is a positive integer, so that the Micro LED devices with the multiple colors are called. The preparation method comprises the following steps:
s1, taking the LED epitaxial wafer of the ith color, wherein i is a positive integer and is more than or equal to 1 and less than or equal to N, and the LED epitaxial wafer of the ith color comprises a substrate of the ith color and an LED epitaxial layer of the ith color;
s2, dividing the pixels of the LED epitaxial layer of the ith color into Micro LED arrays of the ith color to obtain Micro LED epitaxial wafers of the ith color; preparing a metal electrode on the Micro LED array of the ith color; carrying out partial Micro LED transfer on the Micro LED array of the ith color for i-1 times or more, wherein the transfer is usually equal to i-1 times;
s3, taking a COMS driving chip, and preparing an electrode structure on the COMS driving chip, wherein the electrode structure corresponds to the Micro LED array with the ith color obtained after S2, and the size and shape of the electrode structure are the same as those of the metal electrodes on the Micro LED array with the ith color;
s4, carrying out wafer-level bonding on the COMS driving chip and the Micro LED array of the ith color;
and S5, peeling the connection part of the Micro LED array of the ith color corresponding to the bonding position and the substrate of the ith color by using laser, and obtaining the COMS substrate with the Micro LEDs after peeling.
S6, if i is equal to N, S7 is performed; otherwise i ' ═ i +1, return S1 with i ' as i, and the COMS substrate with Micro LEDs as the COMS driver chip, i.e., perform S1 to S6 with i ' as i and the COMS substrate with Micro LEDs as the COMS driver chip.
S7, preparing an isolation layer on the COMS substrate with the Micro LEDs, wherein the isolation layer is positioned among the Micro LEDs with different colors, and obtaining the COMS substrate with the isolation layer and the Micro LEDs;
and S8, preparing a transparent common electrode on the upper surface of the COMS substrate obtained in the S7 to obtain the Micro LED devices with N colors, wherein all the metal electrodes on the Micro LED devices with the N colors are identical in size and shape, and the adjacent metal electrodes are equal in spacing.
In S1, the substrate of the ith color is a sapphire substrate, and the LED epitaxial layers of the ith color are located on the sapphire substrate. The i color LED epitaxial layer material is not limited and can be GaAs, GaP, GaN, SiC or AlGaN, and the sapphire substrate can be a C-Plane sapphire substrate, a patterned sapphire substrate or other forms of sapphire substrates. The size of the i-th color LED epitaxial wafer may be 4 inches, or may be 6 inches or 8 inches, which is not limited in this embodiment.
The pixel division in S2 above should be understood as realizing division of LED pixels to form Micro LED chips with independent light emitting capability. The dividing manner may be dry etching or wet etching, which is not limited in this embodiment. In this embodiment, the array size, the pixel size, and the pixel pitch of the Micro LED array of the i-th color formed by division are not limited. The i-th color Micro LED epitaxial wafer comprises an i-th color substrate and an i-th color Micro LED array.
In S2, the step of forming metal electrodes on the Micro LED array of the ith color is to form electrodes only on the surface of the epitaxial layer, i.e., on the surface of the epitaxial layer. In the present embodiment, the material of the metal electrode is not limited, and preferably, it may be a Ti/Au alloy. In this embodiment, the method for preparing the metal electrode is not limited, and preferably, the metal electrode can be prepared by selective evaporation. In this embodiment, the thickness of the metal electrode is not limited, and may be any thickness value capable of realizing electrical interconnection.
The transfer of the part of Micro LEDs of S2 can be called as subarea laser peeling, and the specific process is as follows: and taking a CMOS driving chip I, carrying out wafer-level bonding on the CMOS driving chip I and the Micro LED array with the ith color, and stripping the joint of the Micro LED array with the ith color corresponding to the bonding position and the substrate with the ith color by using laser. Repeating the above specific process X times, X CMOS substrates (CMOS driver chip can be used as CMOS driver chip) having the Micro LEDs of the ith color, and X substrates transferring the Micro LEDs of the ith color X times, where X is a positive integer, can be obtained. The CMOS driving chip I is provided with a first electrode structure corresponding to the Micro LED array of the ith color, and the distance between the first electrode structure and the first electrode structure is (the width of a metal electrode on the Micro LED array of the ith color) × (N-1) + (the distance between the metal electrodes on the Micro LED array of the ith color) × N. And the bonding is to align the electrode structure I on the COMS driving chip I with the metal electrode on the MicroLED array of the ith color to be bonded, and then carry out wafer-level bonding on the electrode structure I and the metal electrode after alignment. The first CMOS driving chip may be a CMOS driving chip without a Micro LED or a CMOS driving chip with a Micro LED. The bonding method may be thermal compression bonding or thermosonic bonding, which is not limited in this embodiment.
The electrode structure pitch in S3 is equal to (N-1 times the width of the metal electrode on the Micro LED array of the ith color) + (N times the metal electrode pitch on the Micro LED array of the ith color) the electrode structure pitch of the metal electrode on the Micro LED array of the ith color.
In S3, if i is 1, taking a CMOS driving chip of the Micro LED array without color, and then providing the CMOS driving chip with an electrode structure corresponding to the Micro LED array with the 1 st color; if i is 2, preparing an electrode structure corresponding to the Micro LED array with the 2 nd color on a COMS driving chip, wherein the COMS driving chip is a COMS substrate of the Micro LED with the 1 st color; if i is 3, a COMS driving chip is prepared on the substrate, and the COMS driving chip is a COMS substrate of the Micro LED array with the 1 st color and the 2 nd color, and the corresponding electrode structure of the Micro LED array with the 3 rd color is adopted. In this embodiment, the connection electrode is formed on the CMOS driver chip by using semiconductor photolithography and plating processes.
The S4 is specifically: and aligning the electrode structure on the COMS driving chip with a metal electrode on the Micro LED array of the ith color to be bonded with the COMS driving chip, and carrying out wafer-level bonding on the electrode structure and the metal electrode after aligning. The bonding method may be thermal compression bonding or thermosonic bonding, which is not limited in this embodiment.
The laser used in S5 had an energy density of 700mJ/cm2And a laser beam emitted from a KrF excimer laser having a pulse width of 38ns and a wavelength of 248 nm. The lift-off is to complete separation of the epitaxial layer of the epitaxial wafer and the sapphire substrate and remove the sapphire substrate after the separation.
The isolation layer in S7 is filled in the gaps of the Micro LED array, and is used for optical and electrical isolation of the Micro LEDs of different colors, so as to prevent photoelectric interference between adjacent Micro LEDs. The isolation layer material is an organic substance with insulating property, such as PI, epoxy resin, PDMS, etc., and the isolation layer material of the present embodiment is not limited.
The preparation method in S8 may be vacuum electron beam evaporation, ion beam evaporation, sputtering, liquid phase deposition, or the like, and the method for preparing the transparent common electrode is not limited in this embodiment. The transparent common electrode may be ITO, FTO, or other material having a transparent conductive function, which is not limited in this embodiment. The transparent common electrode connects the upper surfaces of the COMS substrates with the isolation layers, i.e. the upper surfaces of the Micro LED arrays.
The metal electrode on the Micro LED array, the electrode structure on the CMOS driving chip and the electrode structure on the CMOS driving chip are identical in shape and size. The metal electrode is round or square, the width of the square metal electrode is equal to the side length of the metal electrode, and the width of the round metal electrode is equal to the diameter of the metal electrode.
The preparation method is not limited when the metal electrode and the electrode structure are prepared, even when the electrode structure needs to be prepared, and preferably, the electrode preparation can be realized by selecting evaporation. It should be noted that, in order to ensure the subsequent process steps, the thickness of the electrode structure prepared in the i +1 st execution of S3 is greater than the thickness of the electrode structure prepared in the i +1 st execution of S3.
The (i + 1) th color should be a color that has not been used before. S1 is performed N times in total, and the color of the i-th color LED epitaxial wafer obtained at each of the N times S2 is different from the other times. The shape, size and spacing of the Micro LEDs on the Micro LED array of the (i + 1) th color are the same as those of the Micro LEDs on the Micro LED array of the (i) th color. The number of Micro LEDs on the (i + 1) th color Micro LED array should be greater than or equal to the number of Micro LEDs on the ith color Micro LED array. The metal electrodes on the Micro LED devices with the N colors and the metal electrodes on the Micro LED arrays with the ith color are identical in shape, size and spacing.
In the following, three colors of Micro LED devices are prepared with N ═ 3, and a three-color preparation Micro LED divisional batch preparation method is shown in fig. 1, specifically as follows:
step 1: and providing the LED epitaxial wafer with the 1 st color. Referring to fig. 2, in this embodiment, the 1 st color may be any one of red, green and blue, or may be other specific colors. The epitaxial wafer is composed of a sapphire substrate and an epitaxial layer on the sapphire substrate.
Step 2: and (4) dividing the LED epitaxial layer pixels of the 1 st color to form a 1 st color Micro LED array. With reference to fig. 3, the LED pixels are segmented.
And step 3: and preparing a metal electrode on the surface of the 1 st color Micro LED array, and combining the metal electrode with the figure 4.
And 4, step 4: and taking a COMS driving chip. With reference to fig. 5, the CMOS driving substrate surface is prepared with an electrode structure capable of driving the function of the Micro LED. The size of the electrode structure on the CMOS driving substrate is the same as that of the Micro LED prepared in the step 2. The electrode spacing on the CMOS driving substrate should be N times the Micro LED spacing prepared in step 2 plus N-1 times the Micro LED width (N is greater than or equal to 3), and for convenience of explanation in this embodiment, the electrode spacing on the CMOS driving substrate is referred to as 3 times the prepared Micro LED spacing. The material of the CMOS driving substrate is not limited herein, and may be a silicon-based material, or a carbon-based or other type of material.
And 5: and bonding the CMOS driving chip with the 1 st color Micro LED. Referring to fig. 6, bonding should align the electrodes on the CMOS driver chip with the surface electrodes of the Micro LED array in step 3.
Step 6: the substrate of the 1 st color Micro LED array is peeled off with a laser in selected areas. Referring to fig. 7, the selected area corresponds to the electrode bonding position in step 5.
And 7: an electrode structure was fabricated on a CMOS substrate with a Micro LED of color 1. Referring to fig. 8, the electrode structure should be a plurality of electrodes arranged periodically and located between the existing electrode structures on the CMOS driving substrate. The size of the electrode structure needs to be the same as that of the electrode structure on the CMOS driving chip, and the distance between the prepared electrode structures needs to be the same as that of the electrode structure of the Micro LED array corresponding to the ith color on the CMOS driving chip. In the present embodiment, the material of the electrode is not limited, and preferably, it may be a Ti/Au alloy. In this embodiment, the method for preparing the electrode is not limited, and preferably, the electrode preparation can be realized by selective evaporation. It should be noted that, in order to ensure the subsequent process steps, the thickness of the electrode needs to be larger than that of the electrode on the CMOS driving chip.
And 8: the Micro LED array of the 2 nd color that completed one transfer (partial Micro LED transfer) was obtained. The 2 nd color should be a color that was not used in step 1. The size and the pitch of the Micro LEDs on the Micro LED array of the 2 nd color are the same as those in the step 2. The number of Micro LEDs on the array of Micro LEDs of color 2 should be greater than or equal to the number of Micro LEDs of color 1.
And step 9: the 2 nd color Micro LED array is bonded to a CMOS substrate having the 1 st color Micro LED. Referring to fig. 9, bonding should align the electrode structure prepared in step 7 with the surface electrodes of the Micro LED array in step 8.
Step 10: the substrate of the 2 nd color Micro LED array is peeled off with a laser in selected areas. Referring to fig. 10, the selected area corresponds to the electrode bonding position in step 9.
Step 11: electrode structures were fabricated on a CMOS substrate with two color (1 st and 2 nd) Micro LEDs. Referring to fig. 11, the electrodes should be a plurality of electrodes arranged periodically and located between the existing electrode structures on the CMOS driving substrate. The size of the electrodes needs to be the same as the electrodes on the CMOS driving chip, and the distance between the prepared electrodes needs to be the same as the distance between the electrodes on the CMOS driving chip. In the present embodiment, the material of the electrode is not limited, and preferably, it may be a Ti/Au alloy. In this embodiment, the method for preparing the electrode is not limited, and preferably, the electrode preparation can be realized by selective evaporation. It should be noted that, in order to ensure the subsequent process steps, the thickness of the electrode needs to be larger than that of the electrode in step 10.
Step 12: the Micro LED array of the 3 rd color that completed the two transfers was obtained. The 3 rd color should be a color that was not used in both step 1 and step 9. The size and the pitch of the Micro LEDs on the Micro LED array of the 3 rd color are the same as those in the step 2. The number of Micro LEDs on the array of Micro LEDs of color 3 should be greater than or equal to the number of Micro LEDs of color 1.
Step 13: a CMOS substrate with two color Micro LEDs was bonded to a 3 rd color Micro LED array that completed two transfers. Referring to fig. 12, bonding should align the electrode structure prepared in step 11 with the surface electrodes of the Micro LED array in step 12. The bonding method may be thermal compression bonding or thermosonic bonding, which is not limited in this embodiment.
Step 14: and peeling off the 3 rd color Micro LED substrate in the selected area by using laser. Referring to fig. 13, the selected areas correspond to the electrode bonding locations in step 13.
Step 15: the isolation layer was prepared, see fig. 14.
Step 16: a transparent common electrode was prepared, see fig. 15.
The multi-color Micro LED zone batch preparation method is based on wafer-level bonding and laser stripping technologies, the zone batch preparation technology utilizes a wafer-level bonding technology and an LED epitaxial layer stripping technology with laser area selectivity to realize batch preparation of Micro LEDs, and integrated preparation of Micro LEDs with different colors is realized through a zone batch preparation mode. The method realizes the batch preparation of the multicolor Micro LED, and has the advantages of high preparation efficiency, high reliability, high epitaxial layer material utilization rate, low cost and the like.

Claims (10)

1. The multi-color Micro LED partitioned batch preparation method is characterized by comprising the following steps of:
s1, taking the LED epitaxial wafer of the ith color, wherein i is a positive integer, i is more than or equal to 1 and less than or equal to N, N is more than or equal to 3 and is a positive integer, and the LED epitaxial wafer of the ith color comprises a substrate of the ith color and an LED epitaxial layer of the ith color;
s2, dividing the pixels of the LED epitaxial layer of the ith color into Micro LED arrays of the ith color to obtain Micro LED epitaxial wafers of the ith color; preparing a metal electrode on the Micro LED array of the ith color; transferring the Micro LED array of the ith color for i-1 times or more;
s3, taking a COMS driving chip, and preparing an electrode structure on the COMS driving chip, wherein the electrode structure corresponds to the Micro LED array with the ith color obtained after S2, and the size and shape of the electrode structure are the same as those of the metal electrode on the Micro LED array with the ith color;
s4, carrying out wafer-level bonding on the COMS driving chip and the Micro LED array of the ith color;
s5, peeling the connection position of the Micro LED array of the ith color corresponding to the bonding position and the substrate of the ith color by using laser, and obtaining a COMS substrate with the Micro LEDs after peeling;
s6, if i is equal to N, S7 is performed; otherwise, returning the I' as i and the COMS substrate with the Micro LEDs as a COMS driving chip to S1;
s7, preparing an isolation layer on the COMS substrate with the Micro LEDs, wherein the isolation layer is positioned among the Micro LEDs with different colors, so that the COMS substrate with the isolation layer and the Micro LEDs is obtained;
and S8, preparing a transparent common electrode on the upper surface of the COMS substrate obtained in the S7 to obtain the Micro LED devices with N colors, wherein all the metal electrodes on the Micro LED devices with the N colors are identical in size and shape, and the adjacent metal electrodes are identical in spacing.
2. The multi-color Micro LED zone batch preparation method of claim 1, wherein the specific process of transferring the partial Micro LEDs in the S2 is as follows: taking a CMOS driving chip I, carrying out wafer-level bonding on the CMOS driving chip I and the Micro LED array with the ith color, and stripping the joint of the Micro LED array with the ith color and the substrate with the ith color, which corresponds to the bonding position, by using laser.
3. The multi-color Micro LED zone-batch manufacturing method of claim 2, wherein a first CMOS driver chip in S2 has a first electrode structure corresponding to the Micro LED array of the ith color, and the first electrode structure has a pitch equal to the sum of N-1 times the width of the metal electrode on the Micro LED array of the ith color and N times the pitch of the metal electrode on the Micro LED array of the ith color.
4. The multi-color Micro LED batch manufacturing method according to claim 1, wherein the pitch of the electrode structures in S3 is equal to the sum of N-1 times the width of the metal electrodes on the Micro LED array of the ith color and N times the pitch of the metal electrodes on the Micro LED array of the ith color.
5. The multi-color Micro LED zone-wise batch preparation method of claim 1, wherein the S4 is specifically: and aligning the electrode structure on the COMS driving chip with a metal electrode on the Micro LED array of the ith color to be bonded with the COMS driving chip, and carrying out wafer-level bonding on the electrode structure and the metal electrode after aligning.
6. The multi-color Micro LED zone batch fabrication method of claim 1, wherein the laser in S5 is used with an energy density of 700mJ/cm2And a laser beam emitted from a KrF excimer laser having a pulse width of 38ns and a wavelength of 248 nm.
7. The multi-color Micro LED batch manufacturing method according to claim 1, wherein the isolation layer in S7 is used for optical and electrical isolation of different color Micro LEDs, and the isolation layer material is organic with insulating property.
8. The multi-color Micro LED zone batch preparation method of claim 1, wherein the number of Micro LEDs on the i-th color Micro LED array obtained by the i +1 st execution of S2 is greater than or equal to the number of Micro LEDs on the i-th color Micro LED array obtained by the i-th execution of S2.
9. The multi-color Micro LED zone batch manufacturing method of claim 1, wherein the shape, size and pitch of the Micro LEDs on the i-th color Micro LED array obtained by performing S2 the i +1 th time are the same as the shape, size and pitch of the Micro LEDs on the i-th color Micro LED array obtained by performing S2 the i-th time.
10. The multi-color Micro LED batch manufacturing method according to claim 1, wherein the colors of the i-th color LED epitaxial wafers obtained by performing the S1N times are different.
CN201910891281.7A 2019-09-20 2019-09-20 Multi-color Micro LED partitioned batch preparation method Pending CN110610931A (en)

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CN111048634A (en) * 2019-12-26 2020-04-21 重庆康佳光电技术研究院有限公司 Micro LED transferring method and backboard
CN111613699A (en) * 2020-05-25 2020-09-01 深圳市华星光电半导体显示技术有限公司 Micro light-emitting diode and manufacturing method thereof
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CN111769103A (en) * 2020-06-29 2020-10-13 南昌大学 Preparation method of multicolor Micro LED light-emitting module
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CN112071795A (en) * 2020-09-10 2020-12-11 Tcl华星光电技术有限公司 Transfer method of Micro-LED chip
CN112233611A (en) * 2020-10-22 2021-01-15 Oppo广东移动通信有限公司 Display module, preparation method and control method thereof and electronic equipment
WO2022157643A1 (en) * 2021-01-22 2022-07-28 Jade Bird Display (shanghai) Limited Slicing micro-led wafer and slicing micro-led chip
US11710725B2 (en) 2021-01-22 2023-07-25 Jade Bird Display (shanghai) Limited Slicing micro-LED wafer and slicing micro-LED chip
CN116779733A (en) * 2023-08-24 2023-09-19 晶能光电股份有限公司 Micro LED pixel unit forming method

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