CN100420019C - Packaging method for colony light-emitting diode chips and devices thereof - Google Patents
Packaging method for colony light-emitting diode chips and devices thereof Download PDFInfo
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- CN100420019C CN100420019C CNB2005100343322A CN200510034332A CN100420019C CN 100420019 C CN100420019 C CN 100420019C CN B2005100343322 A CNB2005100343322 A CN B2005100343322A CN 200510034332 A CN200510034332 A CN 200510034332A CN 100420019 C CN100420019 C CN 100420019C
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- emitting diode
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004806 packaging method and process Methods 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 230000005855 radiation Effects 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000741 silica gel Substances 0.000 claims description 13
- 229910002027 silica gel Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 238000012856 packing Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000005253 cladding Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000012780 transparent material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The present invention relates to a method and a device for packaging a cluster LED chip. The method comprises the following steps: more than one layer of base boards (10-1 to 10-n) is arranged, the facade of the bottommost base board (10-n) is a plane or a concave-downward cavity when a plurality of layers of base boards are arranged, the rest layers of base boards are at least provided with a through hole (70-1 to 70-n) in an exit direction of light rays, and the structure of the hole comprises an annular hole wall (52-1 to 52-n) and an annular lug boss plane for fixing an LED; insulating passivation layers (30-1 to 30-n) are coated on the stitching surfaces of all the base boards (10-1 to 10-n); metal cladding lines (31-1 to 31-n) which are arranged between the insulating passivation layers (30-1 to 30-n) are connected and communicated by metal conductors; each layer of metal lines (31-1 to 31-n) is connected to more than two LED wafers (40); reflecting covers (50-1 to 50-n) are formed on the hole wall of each base board (10-1 to 10-n). The present invention has the advantages of high brightness, good heat radiation, long life time, high mechanical strength, simple technology and broad application ranges.
Description
Technical field
The method that the present invention relates to be used for photoemissive semiconductor device and make this device relates in particular to many light-emitting diode chip for backlight unit is encapsulated in a method and a device within the device.
Background technology
In the prior art, along with the development of light-emitting diode (LED) technology, the light-emitting diode chip for backlight unit of various luminous efficiencies, different capacity puts goods on the market in a large number.But still there is the low shortcoming of luminosity in LED and has limited its range of application.A plurality of Chip Packaging are become a device can significantly improve LED brightness, but there is the low defective of led chip packaging density in prior art,, will increase the volume of finished product device greatly if increase packaged chip quantity.When led chip quantity is a lot of in a device,, solve the problem of heat radiation with regard to needs, and prior art does not address this problem as power device.Simultaneously, be suitable for various environments for use, the LED device also should possess good sealing property, mechanical strength etc.These problems all have to be solved.
For example No. 02279653 Chinese utility model patent discloses the technical scheme that is called " a kind of LED lattice module of circular arc drum type reflection hole ", and this module is made up of reflection hole, led chip, integrated circuit board, template; Template as prop carrier is a kind of rectangle plastic plate, and there is the reflection hole of proper alignment in the template front, and the distance between the Kong Yukong central longitudinal is horizontal equates that the template reverse side is connected with integrated circuit board; Be fixed with L ED chip below the reflection hole.As can be seen, this device is a kind of planar device.
Also as No. 03235318 Chinese utility model patent, disclose the technical scheme of " a kind of plate shell is the transparent LED lattice module of convex " by name, this module is made up of plate shell, double-sided wiring board, led chip, and the plate clamshell is on double-sided wiring board; On the reverse side of double-sided wiring board, be connected with integrated circuit and pin for connection; Be characterized on the front of double-sided wiring board, form dot matrix by some white reflectings surface, its center in length and breadth between distance equate; The shape of reflecting surface or is circular on demand or be square, or be ellipse; The place is coated with full black beyond the white reflecting surface; Be pasted with led chip on reflecting surface, the plate shell is a kind of dot matrix convex translucent cover, by forming same dot matrix with the optically focused head of the same number of reflecting surface; The shape of optically focused head is corresponding with the shape of reflecting surface, and is promptly three-dimensional or be square, or be circle, or is ellipse.By analyzing as can be seen, this device is still planar device.
All there is the low defective of led chip packaging density in above-mentioned two kinds of schemes.
Summary of the invention
The objective of the invention is to avoid the deficiencies in the prior art part, a kind of method for packing and device of colony light-emitting diode chips are proposed, luminescent device of the present invention, adopt stereoscopic multi-layer, high density LED chip-packaging structure, can significantly improve brightness, and perfect heat-dissipating, long service life, the mechanical strength height, manufacturing process is simple, and the product range of application is more extensive.
The present invention realizes by adopting following technical scheme:
Implement a kind of method for packing of colony light-emitting diode chips, its step comprises:
A., the substrate of the above highly heat-conductive material of one deck is set, when multilayer, wherein bottommost one deck substrate front side is the plane or offers recessed cavity, remainder layer is all opened at least one perforate at the beam projecting direction of principal axis, and the structure of perforate comprises the ring-type hole wall and is used for fixing the annular boss plane of light-emitting diode chip for backlight unit; The beam projecting axle is perpendicular to device plane;
B. the face that is used for pressing at all substrates all is coated with insulating passivation layer;
C., coat of metal circuit is set between described insulating passivation layer, connects conducting by metallic conductor between each coat of metal circuit;
D. on every layer of coat of metal circuit, connect plural light-emitting diode chip for backlight unit;
E. on the hole wall of each substrate, form reflection shield.
Baseplate material comprises aluminium and high heat-conducting ceramic, and contour substrate is circular, oval, square or polygon.
The bottom surface of described bottommost substrate is machined for the plane that connects fin, is processed with more than one heat radiation through hole on it.
Described light-emitting diode chip for backlight unit is wrapped up by transparent silica gel.Can certainly select other transparent materials for use, transparent silica gel can also be covered all chips.
Beam projecting direction of principal axis at described device is provided with translucent cover, and the translucent cover material therefor comprises epoxy resin.
The present invention can also further obtain implementing by following technical scheme:
Manufacture and design a kind of colony light-emitting diode chips packaged device, comprise the light-emitting diode more than two, especially also the substrate that comprises the above highly heat-conductive material of one deck, when multilayer, wherein bottommost one deck substrate front side is the plane or offers recessed cavity, remainder layer is all opened at least one open-work at the beam projecting direction of principal axis, and the structure of open-work comprises the ring-type hole wall and is used for fixing the annular boss plane of light-emitting diode chip for backlight unit; The face that is used for pressing at described substrate all is coated with insulating passivation layer; Coat of metal circuit is arranged between described insulating passivation layer, connect conducting by metallic conductor between each coat of metal circuit; On described every layer of coat of metal circuit, connect two above light-emitting diode chip for backlight unit; On the hole wall of described each substrate, reflection shield is arranged.
Described baseplate material comprises aluminium and high heat-conducting ceramic, and contour substrate is circular, oval, square or polygon, is processed with more than one heat radiation through hole on it.
The bottom surface of described device is the plane that is used to connect fin.
Described light-emitting diode chip for backlight unit is wrapped up by transparent silica gel, can certainly select other transparent materials for use, transparent silica gel can also be covered all chips.
Beam projecting direction of principal axis at described device has translucent cover, and the translucent cover material therefor comprises epoxy resin.
Compared with prior art, LED device of the present invention adopts layer stereo high-density packages structure, can significantly improve brightness, and heat dispersion is outstanding, long service life, and the mechanical strength height, manufacturing process is simple, and the product range of application is more extensive.
Description of drawings
Fig. 1 is a colony light-emitting diode chips packaged device profile schematic diagram of the present invention;
Fig. 2 is the method for the invention and device architecture schematic diagram;
Fig. 3 is the method for the invention and device inside structural upright schematic diagram;
Fig. 4 is the structural representation that the whole light-emitting diode chip for backlight unit of the method for the invention and device are wrapped up by transparent silica gel.
Embodiment
Below in conjunction with accompanying drawing and most preferred embodiment the present invention is further described in detail.
As Fig. 1～shown in Figure 3: implement a kind of method for packing of colony light-emitting diode chips, described method comprises step:
A., the substrate 10-1～10-n of the above highly heat-conductive material of one deck is set, when multilayer, wherein bottommost one laminar substrate 10-n front is the plane or offers recessed cavity, remainder layer is all opened at least one perforate 70-1～70-n in beam projecting axle 80 directions, and the structure of perforate 70-1～70-n comprises ring-type hole wall 52-1～52-n and is used for fixing the annular boss plane 53-1～53-n of light-emitting diode chip for backlight unit 40; Beam projecting axle 80 is perpendicular to device plane;
B. the face that is used for pressing at all substrate 10-1～10-n all is coated with insulating passivation layer 30-1～30-n;
C., coat of metal circuit 31-1～31-n is set between described insulating passivation layer 30-1～30-n, connects conducting by metallic conductor between each coat of metal circuit;
D. on every layer of coat of metal circuit 31-1～31-n, connect plural light-emitting diode chip for backlight unit 40;
E. on hole wall 52-1～52-n of each substrate 10-1～10-n, form reflection shield 50-1～50-n.
As Fig. 1～shown in Figure 3: substrate 10-1～10-n material comprises aluminium and high heat-conducting ceramic, and substrate 10-1～10-n profile is circular, oval, square or polygon, and the best is circular; Be processed with more than one heat radiation through hole 100 on it.
As shown in Figure 2, the bottom surface of described bottommost substrate 10-n is machined for the plane 90 that connects fin.
As shown in Figure 3, in preferred forms, described light-emitting diode chip for backlight unit 40 is wrapped up by transparent silica gel 95, can certainly select other transparent materials for use, as shown in Figure 4, transparent silica gel 95 can also be covered all chips.
In most preferred embodiment, beam projecting axle 80 directions of described device are provided with translucent cover 60, and translucent cover 60 material therefors comprise epoxy resin.
The present invention can also further obtain implementing by following technical scheme:
Manufacture and design a kind of colony light-emitting diode chips packaged device, as Fig. 2, shown in Figure 3, described device comprises the light-emitting diode 40 more than two, especially also the substrate 10-1～10-n that comprises the above highly heat-conductive material of one deck, when multilayer, wherein bottommost one laminar substrate 10-n front is the plane or offers recessed cavity, remainder layer is all opened at least one perforate 70-1～70-n in beam projecting axle 80 directions, and the structure of perforate 70-1～70-n comprises ring-type hole wall 52-1～52-n and is used for fixing the annular boss plane 53-1～53-n of light-emitting diode chip for backlight unit 40; The face that is used for pressing at described substrate 10-1～10-n all is coated with insulating passivation layer 30-1～30-n; Coat of metal circuit 31-1～31-n is arranged between described insulating passivation layer 30-1～30-n, connect conducting by metallic conductor between each coat of metal circuit; On described every layer of coat of metal circuit 31-1～31-n, connect two above light-emitting diode chip for backlight unit 40; On hole wall 52-1～52-n of described each substrate 10-1～10-n, reflection shield 50-1～50-n is arranged.
Described substrate 10-1～10-n material comprises inscription and high heat-conducting ceramic, and substrate 10-1～10-n profile is circular, oval, square or polygon, and the best is circular.Be processed with more than one heat radiation through hole 100 on it.
The bottom surface of described device is the plane 90 that is used to connect fin.
Coat of metal circuit between the described insulating passivation layer, its technology can be with reference to multilayer copper-clad process for manufacturing circuit board flow process of the prior art.Be electrically connected the manufacture craft that can adopt the prior art multilayer circuit board between the coat of metal circuit 31-1～31-n of different layers, connect conduction by through hole or metallic conductor between each layer.
As shown in Figure 3, described light-emitting diode chip for backlight unit 40 is wrapped up by transparent silica gel 95.Transparent silica gel 95 can single parcel one light-emitting diode chip for backlight unit 40, and as shown in Figure 4, transparent silica gel 95 also can be with all light-emitting diode chip for backlight unit 40 parcels.Get among the embodiment at other, also can not establish transparent silica gel 95.
Entire device has draws the binding post that connects all LED.
The form that all LED can adopt series, parallel, go here and there and share at device inside can be according to concrete purposes specific design.
Facts have proved that LED device of the present invention adopts stereoscopic multi-layer, high-density packages structure, can significantly improve brightness, and perfect heat-dissipating, long service life, the mechanical strength height, manufacturing process is simple, and the product range of application is more extensive.
Claims (10)
1. the method for packing of a colony light-emitting diode chips is characterized in that, described method comprises step:
A., the substrate (10-1～10-n) of the above highly heat-conductive material of one deck is set, when multilayer, wherein bottommost one laminar substrate (10-n) front is the plane or offers recessed cavity, remainder layer beam projecting axle (80) direction all have at least one open-work (70-1～70-n), (structure of 70-1～70-n) comprises ring-type hole wall (52-1～52-n) and be used for fixing the annular boss plane (53-1～53-n) of light-emitting diode chip for backlight unit (40) to open-work;
B. (face that 10-1～10-n) is used for pressing all is coated with insulating passivation layer (30-1～30-n) to all substrates;
C. described insulating passivation layer (be provided with between the 30-1～30-n) coat of metal circuit (31-1～31-n), described each coat of metal circuit (connects conducting by metallic conductor between the 31-1～31-n);
D. (31-1～31-n) goes up and connects two above light-emitting diode chip for backlight unit (40) at every layer of coat of metal circuit;
E. (form reflection shield (50-1～50-n) on the hole wall of 10-1～10-n) at each substrate.
2. the method for packing of colony light-emitting diode chips as claimed in claim 1, it is characterized in that: (10-1～10-n) material comprises aluminium and high heat-conducting ceramic to substrate, (10-1～10-n) profile is circular, oval, square or polygon to substrate, is processed with more than one heat radiation through hole (100) on it.
3. the method for packing of colony light-emitting diode chips as claimed in claim 1, the bottom surface of described bottommost substrate (10-n) is machined for the plane (90) that connects fin.
4. the method for packing of colony light-emitting diode chips as claimed in claim 1, described light-emitting diode chip for backlight unit (40) is wrapped up by transparent silica gel (95).
5. the method for packing of colony light-emitting diode chips as claimed in claim 1 is provided with translucent cover (60) in beam projecting axle (80) direction of described device, and translucent cover (60) material therefor comprises epoxy resin.
6. colony light-emitting diode chips packaged device, comprise the light-emitting diode (40) more than two, it is characterized in that: the substrate (10-1～10-n) that also comprises the above highly heat-conductive material of one deck, when multilayer, wherein bottommost one laminar substrate (10-n) front is the plane or offers recessed cavity, remainder layer beam projecting axle (80) direction all open at least one open-work (70-1～70-n), (structure of 70-1～70-n) comprises ring-type hole wall (52-1～52-n) and be used for fixing the annular boss plane (53-1～53-n) of light-emitting diode chip for backlight unit (40) to open-work; (face that 10-1～10-n) is used for pressing all is coated with insulating passivation layer (30-1～30-n) at described substrate; Described insulating passivation layer (have between the 30-1～30-n) coat of metal circuit (31-1～31-n), each coat of metal circuit (connects conducting by metallic conductor between the 31-1～31-n); (31-1～31-n) goes up and connects two above light-emitting diode chip for backlight unit (40) at described every layer of coat of metal circuit; (hole wall of 10-1～10-n) (has reflection shield (50-1～50-n) on the 52-1～52-n) at described each substrate.
7. colony light-emitting diode chips packaged device as claimed in claim 6, it is characterized in that: (10-1～10-n) material comprises aluminium and high heat-conducting ceramic to described substrate, (10-1～10-n) profile is circular, oval, square or polygon to substrate, is processed with more than one heat radiation through hole (100) on it.
8. colony light-emitting diode chips packaged device as claimed in claim 6 is characterized in that: the bottom surface of described device is the plane (90) that is used to connect fin.
9. colony light-emitting diode chips packaged device as claimed in claim 6 is characterized in that: described light-emitting diode chip for backlight unit (40) is wrapped up by transparent silica gel (95).
10. colony light-emitting diode chips packaged device as claimed in claim 6 is characterized in that: beam projecting axle (80) direction at described device has translucent cover (60), and translucent cover (60) material therefor comprises epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100343322A CN100420019C (en) | 2005-04-20 | 2005-04-20 | Packaging method for colony light-emitting diode chips and devices thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100343322A CN100420019C (en) | 2005-04-20 | 2005-04-20 | Packaging method for colony light-emitting diode chips and devices thereof |
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| Publication Number | Publication Date |
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| CN1702862A CN1702862A (en) | 2005-11-30 |
| CN100420019C true CN100420019C (en) | 2008-09-17 |
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| CNB2005100343322A Active CN100420019C (en) | 2005-04-20 | 2005-04-20 | Packaging method for colony light-emitting diode chips and devices thereof |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101118035B (en) * | 2006-07-12 | 2012-03-07 | 香港应用科技研究院有限公司 | Led assembly and use thereof |
| CN101409320B (en) * | 2007-10-09 | 2010-06-23 | 富士迈半导体精密工业（上海）有限公司 | Method for preparing substrate |
| CN101996983B (en) * | 2009-08-21 | 2013-01-23 | 深圳华映显示科技有限公司 | Light-emitting diode encapsulation structure and bracket structure |
| CN102543987A (en) * | 2012-02-07 | 2012-07-04 | 达亮电子（苏州）有限公司 | Solid-state light-emitting component |
| CN107068666A (en) * | 2017-04-21 | 2017-08-18 | 蒋雪娇 | The package structure for LED and light fixture of thermal diffusivity can be improved |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498355B1 (en) * | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
| CN1417868A (en) * | 2001-10-29 | 2003-05-14 | 银河光电股份有限公司 | Multiple-chip package structure of LED chip |
| WO2004023522A2 (en) * | 2002-09-04 | 2004-03-18 | Cree, Inc. | Power surface mount light emitting die package |
-
2005
- 2005-04-20 CN CNB2005100343322A patent/CN100420019C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498355B1 (en) * | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
| CN1417868A (en) * | 2001-10-29 | 2003-05-14 | 银河光电股份有限公司 | Multiple-chip package structure of LED chip |
| WO2004023522A2 (en) * | 2002-09-04 | 2004-03-18 | Cree, Inc. | Power surface mount light emitting die package |
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| CN1702862A (en) | 2005-11-30 |
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