CN1897313A - Light-emitting diodes and its packing structure - Google Patents
Light-emitting diodes and its packing structure Download PDFInfo
- Publication number
- CN1897313A CN1897313A CNA2005100830041A CN200510083004A CN1897313A CN 1897313 A CN1897313 A CN 1897313A CN A2005100830041 A CNA2005100830041 A CN A2005100830041A CN 200510083004 A CN200510083004 A CN 200510083004A CN 1897313 A CN1897313 A CN 1897313A
- Authority
- CN
- China
- Prior art keywords
- light
- semiconductor layer
- layer
- emitting diode
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
A light emitting diode includes the basic material, the designing semiconductor layer, the two touching underlays, the dielectric layer and the fluorescence film. The designing semiconductor layer sets on the basic material and sends the first light, and the touching underlay sets on the designing semiconductor layer. The dielectric layer covers on the designing semiconductor layer and exposures the touching underlay partly. The fluorescence film sets on the designing semiconductor layer, sends the second light that is different wavelength with the first light by the irradiation of the first light. The invention provides the light emitting diode sealing structure of the light emitting diode.
Description
Technical field
The present invention relates to a kind of light-emitting component and encapsulating structure thereof, and be particularly related to a kind of light-emitting diode (Light Emitting Diode, LED) and encapsulating structure.
Background technology
In recent years, because the luminous efficiency of light-emitting diode improves constantly, make light-emitting diode replace fluorescent lamp and white heat bulb gradually in some field, scanner lamp source, Backlight For Liquid Crystal Display Panels or the front light-source, the Dashboard illumination of automobile, the traffic sign lamp that for example need reaction at a high speed, and general lighting device etc.Light-emitting diode and conventional bulb relatively have absolute advantage, for example volume is little, life-span length, low-voltage/current drives, be difficult for breaking, do not have thermal radiation when luminous, do not contain mercury (not having pollution problem), the good characteristics such as (power savings) of luminous efficiency.With production technology and the application of today, in the colour system of various light-emitting diodes, more compelling have a white light emitting diode.
White light is a kind of mixed light of many colors, and the being seen white light of human eye is formed by the coloured light of two or more wavelength at least, mixes and two wavelength white lights of acquisition as blue, sodium yellow, or is mixed and the three-wavelength white light of acquisition by red, green, blue coloured light.The mode of making white light emitting diode at present roughly has following three kinds: (1) is with three light-emitting diode chip for backlight unit collocation of red, green, blue (three-wavelength type), and pass through adjustment and pass through the electric current of three light-emitting diode chip for backlight unit to produce uniform white light, this kind mode has very high luminous efficiency, but relative production cost is also higher; (2) with two light-emitting diode chip for backlight unit collocation of blue light and gold-tinted (two wave length types), and by adjusting electric current by two light-emitting diode chip for backlight unit to produce uniform white light, this kind mode has good luminous efficiency, and production cost is lower; And (3) based on a blue light that blue light diode was produced, and excites yellow fluorescent material to produce gold-tinted, and produces white light by the mode of mixed light, and this kind mode is produced easily, luminous efficiency is lower, but cost is also lower.Therefore, present most white light emitting diode all adopts the mode of blue-light excited yellow fluorescent material to produce white light.
Fig. 1 is the generalized section of known white light-emitting diode package structure.Please refer to Fig. 1, known white light-emitting diode package structure 100 is made of foot rest 102, fluorescence coating 103, light-emitting diode 106, two bonding wire 108a, 108b and packing colloid 110.Wherein, foot rest 102 is by two pin one 02a, 102b and be arranged at the last load bearing seat 102c of pin one 02a and constituted.Light-emitting diode 106 is installed among the load bearing seat 102c, and is electrically connected with pin one 02a, 102b respectively by bonding wire 108a, 108b.In addition, fluorescence coating 103 coats light-emitting diode 106 and bonding wire 108a, 108b partly.Have fluorescent material 104 in the fluorescence coating 103, fluorescence coating 103 is epoxy resin materials such as (expoxy), and fluorescent material 104 is yellow fluorescent substance such as YAG.In addition, packing colloid 110 coats pin one 02a, the 102b of fluorescence coating 103, bonding wire 108a, 108b, light-emitting diode 106 and part.
It should be noted that, in the known white light-emitting diode package structure 100, because of 104 distribution densities of the fluorescent material in the fluorescence coating 103 are difficult to grasp, when the fluorescent material in the fluorescence coating 103 distributes comparatively evenly, the gold-tinted that blue light that light-emitting diode 106 is sent and fluorescent material 104 are sent can blend together the white light color of expection, and when the distribution of the fluorescent material in the fluorescence coating 103 was more inhomogeneous, the gold-tinted that blue light that light-emitting diode 106 is sent and fluorescent material 104 are sent blended together the white light color and promptly is not inconsistent with expection.Therefore, the quality of known white light-emitting diode package structure 100 is unstable, causes its production qualification rate on the low side.
Summary of the invention
The purpose of this invention is to provide a kind of light-emitting diode, with the mixed color of light of two kinds of different wave lengths of effective grasp.
Another object of the present invention provides a kind of package structure for LED, with the mixed color of light of two kinds of different wave lengths of effective grasp.
Based on above-mentioned and other purpose, the present invention proposes a kind of light-emitting diode, and it comprises base material, patterned semiconductor layer, two contact mats, dielectric layer and fluorescence membranes.Wherein, patterned semiconductor layer is arranged on the base material, and is suitable for sending first light, and contact mat is arranged on the patterned semiconductor layer.Dielectric layer overlay pattern semiconductor layer, and expose the part contact mat.In addition, fluorescence membrane is arranged on the dielectric layer, and this fluorescence membrane is suitable for sending via the irradiation of first light second light with the first light different wave length.
The present invention proposes a kind of package structure for LED in addition, and it comprises carrier and above-mentioned light-emitting diode, and wherein light-emitting diode is arranged on the carrier, and is electrically connected with carrier.
In the above-mentioned light-emitting diode, the wavelength of first light for example is a blue light wavelength, and the wavelength of second light for example is a yellow wavelengths.
In the above-mentioned light-emitting diode, the wavelength of first light for example is a ultraviolet wavelength, and the wavelength of second light for example is red light wavelength, green wavelength, blue light wavelength or above-mentioned combination.
In the above-mentioned light-emitting diode, patterned semiconductor layer for example comprises the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer.Wherein, the first type doping semiconductor layer is arranged on the base material, and luminescent layer is arranged on the first type doping semiconductor layer, and exposes the part first type doping semiconductor layer.This luminescent layer is suitable for sending first light.In addition, the second type doping semiconductor layer is arranged on the luminescent layer, and contact mat is arranged at respectively on first and second type doping semiconductor layer.
In the above-mentioned light-emitting diode, the first type doping semiconductor layer for example comprises first contact layer and first bond course.First contact layer is arranged on the base material, and first bond course is arranged on first contact layer, and exposes part first contact layer, so that one of them contact mat is arranged on first contact layer.
In the above-mentioned light-emitting diode, the second type doping semiconductor layer for example comprises second bond course and second contact layer.Second bond course is arranged on the luminescent layer, and second contact layer is arranged on second bond course, and one of them contact mat is arranged on second contact layer.
In the above-mentioned light-emitting diode, the first type doping semiconductor layer is a n type semiconductor layer for example, and the second type doping semiconductor layer for example is a p type semiconductor layer.
Above-mentioned light-emitting diode for example also comprises the reflector, and it is arranged on the surface of base material with respect to patterned semiconductor layer.
Above-mentioned light-emitting diode for example also comprises transparency conducting layer, its cover part patterned semiconductor layer, and be positioned at dielectric layer below and one of them contact mat below.
In the present invention, because of the distribution of the fluorescent material in the fluorescence membrane comparatively even, the mixed color of second light that first light and the fluorescence membrane that makes patterned semiconductor layer send sent is easier to grasp, and therefore can improve the stability of product quality, and increases the production qualification rate.
For above and other objects of the present invention, feature and advantage can be become apparent, the present invention's cited below particularly preferred embodiment, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the generalized section of known white light-emitting diode package structure.
Fig. 2 is the schematic diagram of the package structure for LED of one embodiment of the invention.
Fig. 3 is a light-emitting diode structure schematic diagram among Fig. 2.
Fig. 4 is the light-emitting diode structure schematic diagram of another embodiment of the present invention.
The main element description of symbols
100: white light-emitting diode package structure
102: foot rest
102a, 102b, 214,216: pin
102c, 212: load bearing seat
103: fluorescence coating
104: fluorescent material
106,220: light-emitting diode
108a, 108b, 201a, 201b: bonding wire
110,230: packing colloid
200: package structure for LED
202: the first contact layers
204: the first bond courses
206: the second bond courses
208: the second contact layers
210: carrier
221: base material
222: patterned semiconductor layer
222a: the first type doping semiconductor layer
222b: luminescent layer
222c: the second type doping semiconductor layer
223a, 223b: contact mat
224: dielectric layer
225: fluorescence membrane
226: the reflector
227: transparency conducting layer
Embodiment
Fig. 2 is the schematic diagram of the package structure for LED of one embodiment of the invention, and Fig. 3 is a light-emitting diode structure schematic diagram among Fig. 2.Please refer to Fig. 2 and Fig. 3, the package structure for LED 200 of present embodiment comprises carrier 210 and light-emitting diode 220, and wherein light-emitting diode 220 is arranged on the carrier 210, and is electrically connected with carrier 210.This light-emitting diode 220 comprises base material 221, patterned semiconductor layer 222, two contact mat 223a, 223b, dielectric layer 224 and fluorescence membranes 225.Patterned semiconductor layer 222 is arranged on the base material 221, and is suitable for sending first light, and contact mat 223a, 223b are arranged on the patterned semiconductor layer 222.Dielectric layer 224 overlay pattern semiconductor layers 222, and expose part contact mat 223a, 223b.In addition, fluorescence membrane 225 is arranged on the dielectric layer 224, and this fluorescence membrane 225 is suitable for sending via the irradiation of first light second light with the first light different wave length.
From the above, package structure for LED 200 for example also comprises bonding wire 201a and bonding wire 201b, and bonding wire 201a and bonding wire 201b for example are connected between light-emitting diode 210 and the carrier 220.In addition, package structure for LED 200 also can comprise packing colloid 230, and this packing colloid 230 for example coats the carrier 210 of aforementioned light-emitting diode 220 and part.
Below will be described at the detailed structure of above-mentioned member, but following description is the usefulness of explanation as an example only, be not in order to limit the present invention's category, any person of ordinary skill in the field is behind reference the present invention's disclosure content, when can making suitable change and improvement, but it must belong to the present invention's category.
The employed carrier 210 of present embodiment for example is a foot rest, and this foot rest for example comprises load bearing seat 212, pin two 14 and pin two 16.Wherein, load bearing seat 212 is arranged on the pin two 14, in order to carrying light-emitting diode 220.In addition, the material of the dielectric layer 224 of light-emitting diode 220 for example selects for use the material of high light transmittance to improve the luminous efficiency of light-emitting diode 220.
From the above, the patterned semiconductor layer 222 of light-emitting diode 220 for example comprises the first type doping semiconductor layer 222a, luminescent layer 222b and the second type doping semiconductor layer 222c.Wherein, the first type doping semiconductor layer 222a is arranged on the base material 221, and luminescent layer 222b is arranged on the first type doping semiconductor layer 222a, and exposes the part first type doping semiconductor layer 222a.This luminescent layer 222b is suitable for sending the first above-mentioned light.In addition, the second type doping semiconductor layer 222c is arranged on the luminescent layer 222b, and contact mat 223a, 223b are arranged at respectively on first and second type doping semiconductor layer 222a, the 222c.
The first above-mentioned type doping semiconductor layer 222a for example comprises first contact layer 202 and first bond course 204.First contact layer 202 is arranged on the base material 221, and first bond course 204 is arranged on first contact layer 202, and exposes part first contact layer 202, so that contact mat 223b is arranged on first contact layer 202.In addition, the second type doping semiconductor layer 222c for example comprises second bond course 206 and second contact layer 208.Second bond course 206 is arranged on the luminescent layer 222b, and second contact layer 208 is arranged on second bond course 206, and contact mat 223a is arranged on second contact layer 208.
In the present embodiment, the first type doping semiconductor layer 222a is a n type semiconductor layer for example, and the second type doping semiconductor layer 222c for example is a p type semiconductor layer.In addition, contact mat 223a for example is a P type contact mat, contact mat 223b for example is a N type contact mat, and can form good Ohmic contact between the contact mat 223b and first contact layer 202, and also can form good Ohmic contact between the contact mat 223a and the second contact layer 206d.
Can know by Fig. 2 and Fig. 3 and to learn that bonding wire 201a sees through contact mat 223b and is electrically connected with first contact layer 202, and bonding wire 201b passes through contact mat 223a and is electrically connected with second contact layer 208.In the present embodiment, bonding wire 201a and bonding wire 201b for example adopt the good gold thread of ductility (gold wire).In addition, light-emitting diode 220 for example also comprises reflector 226, and it is arranged on the surface of base material 221 with respect to patterned semiconductor layer 222.Second irradiate light that first light that is sent as luminescent layer 222b and fluorescence membrane 225 are sent is during to reflector 222b, reflector 222b can be with these first light and the reflection of second light, the front of its self-luminous diode 220 is penetrated, to improve luminous efficiency.
Because it is comparatively even that the fluorescent material in the fluorescence membrane 225 of present embodiment distributes, and makes fluorescence membrane 225 can send the second preferable light of uniformity.So first light and the mixed light color of second light are easier to grasp, and so can make the quality of product comparatively stable, and then improve the production qualification rate.
In the present embodiment, the wavelength of first light that luminescent layer 222b is sent for example is a blue light wavelength, and fluorescence membrane 225 selected materials for example are to send the material of yellow wavelengths (as YAG or TAG), so that first light and second light are mixed into white light.Wavelength that it should be noted that above-mentioned first light and second light only is usefulness for example, is not in order to limit the present invention.In fact, the wavelength of the present invention's first light also can be ultraviolet wavelength, and can be red light wavelength, green wavelength, blue light wavelength or above-mentioned combination with the wavelength of second light of its collocation.
Fig. 4 is the light-emitting diode structure schematic diagram of another embodiment of the present invention.Please refer to Fig. 4, the light-emitting diode 220 ' of present embodiment is similar to the light-emitting diode 220 that is before disclosed, the main difference of the two is: the light-emitting diode 220 ' of present embodiment also comprises transparency conducting layer 227, its cover part patterned semiconductor layer 222, and be positioned at dielectric layer 224 belows and contact mat 223a below.The material of this transparency conducting layer 227 for example be indium tin oxide (indium tin oxide, ITO), (indium zinc oxide, IZO) or other electrically conducting transparent material, it is in order to improve the luminous efficiency of light-emitting diode 220 ' for indium-zinc oxide.
In sum, the present invention's light-emitting diode and encapsulating structure thereof have following advantage at least:
1. because the distribution of the fluorescent material in the fluorescence membrane is comparatively even, the mixed color of second light that first light and the fluorescence membrane that makes patterned semiconductor layer send sent is easier to grasp, therefore can improve the stability of product quality, increase the production qualification rate.
2. the material of dielectric layer is selected the material of high light transmittance for use, so can improve the luminous efficiency of light-emitting diode.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and improvement, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (18)
1. light-emitting diode is characterized in that comprising:
Base material;
Patterned semiconductor layer is arranged on this base material, and this patterned semiconductor layer is suitable for sending first light;
Two contact mats are arranged on this patterned semiconductor layer;
Dielectric layer covers this patterned semiconductor layer, and exposes the above-mentioned contact mat of part; And
Fluorescence membrane is arranged on this dielectric layer, and wherein this fluorescence membrane is suitable for sending via the irradiation of this first light second light with this first light different wave length.
2. the light-emitting diode according to claim 1 it is characterized in that the wavelength of this first light comprises blue light wavelength, and the wavelength of this second light comprises yellow wavelengths.
3. the light-emitting diode according to claim 1 it is characterized in that the wavelength of this first light comprises ultraviolet wavelength, and the wavelength of this second light comprises red light wavelength, green wavelength, blue light wavelength or above-mentioned combination.
4. the light-emitting diode according to claim 1 is characterized in that this patterned semiconductor layer comprises:
The first type doping semiconductor layer is arranged on this base material;
Luminescent layer is arranged on this first type doping semiconductor layer, and exposes this first type doping semiconductor layer of part, and wherein this luminescent layer is suitable for sending this first light; And
The second type doping semiconductor layer is arranged on this luminescent layer, and wherein above-mentioned contact mat is arranged at respectively on this first and second type doping semiconductor layer.
5. the light-emitting diode according to claim 4 is characterized in that this first type doping semiconductor layer comprises:
First contact layer is arranged on this base material; And
First bond course is arranged on this first contact layer, and exposes this first contact layer of part, so that one of them of above-mentioned contact mat is arranged on this first contact layer.
6. the light-emitting diode according to claim 4 is characterized in that this second type doping semiconductor layer comprises:
Second bond course is arranged on this luminescent layer; And
Second contact layer is arranged on this second bond course, and one of them of above-mentioned contact mat is arranged on this second contact layer.
7. the light-emitting diode according to claim 4 it is characterized in that this first type doping semiconductor layer is a n type semiconductor layer, and this second type doping semiconductor layer is a p type semiconductor layer.
8. the light-emitting diode according to claim 1 is characterized in that also comprising the reflector, is arranged on the surface of this base material with respect to this patterned semiconductor layer.
9. the light-emitting diode according to claim 1 is characterized in that also comprising transparency conducting layer, this patterned semiconductor layer of cover part, and be positioned at below one of them contact mat of this dielectric layer below and above-mentioned contact mat.
10. package structure for LED is characterized in that comprising:
Carrier;
Light-emitting diode is arranged on this carrier, and is electrically connected with this carrier, and wherein this light-emitting diode comprises:
Base material;
Patterned semiconductor layer is arranged on this base material, and this patterned semiconductor layer is suitable for sending
First light;
Two contact mats are arranged on this patterned semiconductor layer;
Dielectric layer covers this patterned semiconductor layer, and exposes the above-mentioned contact mat of part; And
Fluorescence membrane is arranged on this dielectric layer, wherein this fluorescence membrane be suitable for via this first
The irradiation of light and send second light with this first light different wave length.
11. the package structure for LED according to claim 10 it is characterized in that the wavelength of this first light comprises blue light wavelength, and the wavelength of this second light comprises yellow wavelengths.
12. the package structure for LED according to claim 10 it is characterized in that the wavelength of this first light comprises ultraviolet wavelength, and the wavelength of this second light comprises red light wavelength, green wavelength, blue light wavelength or above-mentioned combination.
13. the package structure for LED according to claim 10 is characterized in that this patterned semiconductor layer comprises:
The first type doping semiconductor layer is arranged on this base material;
Luminescent layer is arranged on this first type doping semiconductor layer, and exposes this first type doping semiconductor layer of part, and wherein this luminescent layer is suitable for sending this first light; And
The second type doping semiconductor layer is arranged on this luminescent layer, and wherein above-mentioned contact mat is arranged at respectively on above-mentioned first and second type doping semiconductor layer.
14. the package structure for LED according to claim 13 is characterized in that this first type doping semiconductor layer comprises:
First contact layer is arranged on this base material; And
First bond course is arranged on this first contact layer, and exposes this first contact layer of part, so that one of them of above-mentioned contact mat is arranged on this first contact layer.
15. the package structure for LED according to claim 13 is characterized in that this second type doping semiconductor layer comprises:
Second bond course is arranged on this luminescent layer; And
Second contact layer is arranged on this second bond course, and one of them of above-mentioned contact mat is arranged on this second contact layer.
16. the package structure for LED according to claim 15 it is characterized in that this first type doping semiconductor layer is a n type semiconductor layer, and this second type doping semiconductor layer is a p type semiconductor layer.
17. the package structure for LED according to claim 10 is characterized in that also comprising the reflector, is arranged on the surface of this base material with respect to this patterned semiconductor layer.
18. the package structure for LED according to claim 10 is characterized in that also comprising transparency conducting layer, this patterned semiconductor layer of cover part, and be positioned at below one of them of this dielectric layer below and above-mentioned contact mat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100830041A CN1897313A (en) | 2005-07-12 | 2005-07-12 | Light-emitting diodes and its packing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100830041A CN1897313A (en) | 2005-07-12 | 2005-07-12 | Light-emitting diodes and its packing structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1897313A true CN1897313A (en) | 2007-01-17 |
Family
ID=37609754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100830041A Pending CN1897313A (en) | 2005-07-12 | 2005-07-12 | Light-emitting diodes and its packing structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1897313A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859834A (en) * | 2009-04-07 | 2010-10-13 | 裕星企业有限公司 | Light-emitting diode (LED) and packaging structure thereof |
| CN102044623A (en) * | 2009-10-23 | 2011-05-04 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, and lighting system |
| CN101859845B (en) * | 2009-04-07 | 2016-07-13 | 江苏璨扬光电有限公司 | Light-emitting device and manufacture method thereof |
| CN106257696A (en) * | 2015-06-17 | 2016-12-28 | 三星电子株式会社 | Semiconductor light-emitting apparatus |
-
2005
- 2005-07-12 CN CNA2005100830041A patent/CN1897313A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859834A (en) * | 2009-04-07 | 2010-10-13 | 裕星企业有限公司 | Light-emitting diode (LED) and packaging structure thereof |
| CN101859845B (en) * | 2009-04-07 | 2016-07-13 | 江苏璨扬光电有限公司 | Light-emitting device and manufacture method thereof |
| CN102044623A (en) * | 2009-10-23 | 2011-05-04 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, and lighting system |
| CN106257696A (en) * | 2015-06-17 | 2016-12-28 | 三星电子株式会社 | Semiconductor light-emitting apparatus |
| US10566502B2 (en) | 2015-06-17 | 2020-02-18 | Samsung Electronics Co., Ltd. | Semiconductor light-emitting device |
| CN106257696B (en) * | 2015-06-17 | 2020-07-28 | 三星电子株式会社 | Semiconductor light emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6914261B2 (en) | Light emitting diode module | |
| KR100693463B1 (en) | Light diffusion type light emitting diode | |
| CN1666351A (en) | High power, high luminous flux light emitting diode and method of making same | |
| JP4876760B2 (en) | Light emitting device and white conversion sheet | |
| CN1693960A (en) | Light emitting diode array module for providing backlight and backlight unit having the same | |
| CN101075609A (en) | Structure and method for packing LED chip | |
| CN101075655A (en) | Generator of white-light surface light source | |
| CN2867600Y (en) | Luminous diode package structure | |
| CN101030572A (en) | Method for packing and producing light-emitting diodes | |
| CN106887507B (en) | Light emitting device and method for manufacturing the same | |
| CN1510766A (en) | Surface installation white light emitting diodes | |
| CN1897313A (en) | Light-emitting diodes and its packing structure | |
| CN101051636A (en) | LED packaging structure | |
| TWI412160B (en) | Light emitting diode, back light module, and liquid crystal display | |
| CN1905219A (en) | LED structure | |
| CN1521863A (en) | Light-emitting diode packaging device | |
| KR101423387B1 (en) | Coated diffuser cap for led illumination device | |
| CN1819254A (en) | LED chip | |
| TWI291244B (en) | Light emitting diode and light emitting diode package | |
| KR102261945B1 (en) | Light emitting device and lighting apparatus having thereof | |
| CN2586251Y (en) | Packing structure of white light LED | |
| CN101114636B (en) | Light-mixing luminous element | |
| CN105870114A (en) | Light emitting device, flexible light emitting device and preparation method thereof | |
| KR101723540B1 (en) | Light emitting device and light emitting device package having the same | |
| KR101813167B1 (en) | Light emitting device module and lighting system including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |