CN101859845B - Light-emitting device and manufacture method thereof - Google Patents
Light-emitting device and manufacture method thereof Download PDFInfo
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- CN101859845B CN101859845B CN200910131551.0A CN200910131551A CN101859845B CN 101859845 B CN101859845 B CN 101859845B CN 200910131551 A CN200910131551 A CN 200910131551A CN 101859845 B CN101859845 B CN 101859845B
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Abstract
The invention discloses a kind of light-emitting device and manufacture method thereof, this light-emitting device comprises a LED crystal particle, at least two metal gasket and a fluorescence coating.The present invention is characterized in, make on the direct coated light emitting diodes crystal grain of fluorescence coating and make metal gasket be exposed to outside fluorescence coating, carry out routing and encapsulation procedure to facilitate in the future.It is further characterized as light-emitting device provided by the present invention and is single mixed light crystal grain, it is made directly and encapsulates, it is not necessary to mix fluorescent material on packaging body, such fluorescence coating and packaging body be not for carry out simultaneously, and be different materials, so effectively reduce produced stress problem in packed light-emitting device.
Description
Technical field
The present invention relates to a kind of light-emitting device, particularly relate to a kind of can the light-emitting device of mixed light and manufacture method thereof.
Background technology
Light emitting diode (LightEmittingDiode, LED) it is luminescence component made by semi-conducting material, assembly has two electrode terminals, voltage is applied between terminal, pass into minimum electric current, dump energy can being excited in the form of light via the combination of electronics with hole (electronhole, also known as electricity hole) and disengage, this is the basic principle of luminosity of light emitting diode.Light emitting diode is different from general incandescent lamp bulb, light emitting diode is chemiluminescence, have that power consumption is low, assembly life-span length, lamp time and the advantage such as response speed is fast need not be warmed up, add that its volume is little, vibration resistance, be suitable for volume production, demand in easy fit applications makes minimum or array element, current light emitting diode has been commonly used on indicator and the display device of information, communication and consumption electronic products, becomes significant components indispensable in daily life.
Major part light emitting diode is in time carrying out die package processing procedure at present, mixes fluorescent material in packaging body, can produce stress problem in such packaging body.Because the problems referred to above, the present invention provides a kind of light emitting diode, it is provided that the single mixed light crystal grain having fluorescence coating, can be made directly encapsulation, effectively reduces produced stress problem in packed light emitting diode.
Summary of the invention
The technical problem to be solved is to provide a kind of light-emitting device and manufacture method thereof, makes on the direct coated light emitting diodes crystal grain of fluorescence coating and makes metal gasket be exposed to outside fluorescence coating, carrying out routing and encapsulation procedure to facilitate in the future；Meanwhile, the thickness of the fluorescence coating on direct coated light emitting diodes crystal grain is set to hinge structure thicker, solves the problem that light-emitting device light conversion efficiency is too low；Also provide for single mixed light crystal grain, encapsulation can be made directly, effectively reduce produced stress problem in packed light emitting diode.
For solving above-mentioned technical problem, system of the present invention provides a kind of light-emitting device, and this light-emitting device comprises a LED crystal particle, at least two metal gasket and a fluorescence coating, and this metal gasket is located on this LED crystal particle.This fluorescence coating is located at this LED crystal particle and is provided with on that surface of this metal gasket, and is positioned at around this metal gasket, and the thickness of this fluorescence coating is more than 30 μm.This fluorescence coating directly changes the light that the light of first wave length produced by this light emitting diode partially or in whole is at least one second wave length, and relatively thick fluorescence coating can also improve the light conversion efficiency of the light that the light of first wave length transfers to second wave length.The end face of these two metal gaskets be essence at same level, and this fluorescence coating is not covered in this metal gasket, in order to carry out routing and encapsulation procedure in the future.
The present invention also provides for the manufacture method of a kind of light-emitting device, it is intended to manufacture this light-emitting device system and is initially formed a LED crystal particle, it is subsequently formed at least two metal gasket on this LED crystal particle, and the end face of these two metal gaskets is that essence is at same level；Eventually forming a fluorescence coating and be provided with on that surface of this metal gasket in this LED crystal particle, this fluorescence coating is positioned at the surrounding of this metal gasket and exposes this metal gasket, and the thickness of this fluorescence coating is more than 30 μm；Wherein, forming this fluorescent layer before this LED crystal particle, system is initially formed one and is shielded from this metal gasket, then forms this fluorescent layer in this LED crystal particle, and wherein this metal gasket is covered up and exposes desire and form the position of this fluorescent layer by this shielding system.
By the present invention in that metal gasket exposes, it is possible to conveniently carry out routing and encapsulation procedure in the future.And light-emitting device provided by the present invention is single mixed light crystal grain, being made directly and encapsulate, be not necessary to mix fluorescent material on packaging body, such fluorescence coating and packaging body be not for carry out simultaneously, and be different materials, so effectively reduce produced stress problem in packed light-emitting device；Meanwhile, owing to being provided with thicker fluorescence coating in manufacturing process, it is possible to improve the light conversion efficiency in light-emitting device.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further detailed explanation:
Fig. 1 is the structural representation of a preferred embodiment of the present invention；
Fig. 2 is the schematic flow sheet of a preferred embodiment of the present invention；
Fig. 3 is the schematic flow sheet forming light emitting diode of a preferred embodiment of the present invention；
Fig. 4 A is the structural representation of another preferred embodiment of the present invention；
Fig. 4 B is the structural representation of another preferred embodiment of the present invention；
Fig. 5 is the structural representation of another preferred embodiment of the present invention；
Fig. 6 is the schematic flow sheet of a preferred embodiment of the present invention；
Fig. 7 is the structural representation of another preferred embodiment of the present invention；And
Fig. 8 is the schematic flow sheet of a preferred embodiment of the present invention.
Description of reference numerals in figure:
1 is light-emitting device；10 is LED crystal particle；
101 is the first semiconductor layer；103 is luminescent layer；
105 is the second semiconductor layer；107 is electrode；
12 is metal gasket；16 is fluorescence coating；
18 is dielectric layer；2 is carrier；
3 is packaging body.
Detailed description of the invention
Refer to Fig. 1, be the structural representation of the present invention one preferred embodiments.As shown in the figure, the present embodiment provides a kind of light-emitting device, this light-emitting device 1 is comprise a LED crystal particle 10, at least one metal gasket 12 and a fluorescence coating 16, this LED crystal particle 10 comprises two electrodes 107, the quantity of this metal gasket 12 of the present embodiment is two, and this two metal gasket 12 is respectively arranged on this two electrode 107.This fluorescence coating 16 is located on this LED crystal particle 10, and is positioned at this two metal gasket 12 around, and the outer rim of this fluorescence coating is alignd the outer rim of this LED crystal particle.This fluorescence coating 16 directly changes the light that the light of first wave length produced by this LED crystal particle 10 partially or in whole is at least one second wave length, to form mixed light.The end face of these two metal gaskets be essence at same level, and this fluorescence coating 16 is not covered on this two metal gasket 12, and the end face of this metal gasket is exposed to, in order to carry out routing and encapsulation procedure in the future.And this light-emitting device 1 that the present embodiment provides is a mixed light crystal grain, can be made directly encapsulation, fluorescent material need to do not mixed on packaging body.Wherein the thickness of this fluorescence coating 16 is more than 30 μm.And the material of this fluorescence coating 16 comprises a fluorescent material and a high-molecular organic material, its one is selected in the combination of red fluorescence powder, green emitting phosphor, blue colour fluorescent powder and above-mentioned fluorescent material by this fluorescent material system.
Above-mentioned LED crystal particle 10 more comprises one first semiconductor layer 101, luminescent layer 103 and one second semiconductor layer 105, this luminescent layer 103 is located on this first semiconductor layer 101, this second semiconductor layer 105 is located on this luminescent layer 103, and at least one metal gasket 12 and at least one electrode 107 are located on this first semiconductor layer 101 and the second semiconductor layer 105, wherein when this first semiconductor layer 101 is P type, this second semiconductor layer 105 is N-type；Or when this first semiconductor layer 101 is N-type, this second semiconductor layer 105 is P type.
See also Fig. 2, be the schematic flow sheet of a preferred embodiment of the present invention.As it can be seen, hold Fig. 1, Fig. 1 to provide a kind of light-emitting device 1, and this figure provides the manufacture method of a kind of light-emitting device 1, being intended to manufacture this light-emitting device 1 is first carry out step S10, forms a LED crystal particle 10, and wherein this LED crystal particle 10 comprises this two electrode 107.See also Fig. 3, the step forming this LED crystal particle 10 more comprises step S101, form one first semiconductor layer 101, then step S103 is performed, form a luminescent layer 103 on this first semiconductor layer 101, finally perform step S105, form one second semiconductor layer 105 on this luminescent layer 103.
After completing step S10, perform step S12, form at least two metal gasket 12 on this two electrode 107 of this LED crystal particle 10, the end face of these two metal gaskets is that essence is at same level, then step S14 is performed, form a fluorescence coating 16 on this LED crystal particle 10, the outer rim of this fluorescence coating is alignd the outer rim of this LED crystal particle, this fluorescence coating 16 is not covered in this metal gasket 12, to expose the end face of this metal gasket 12, so it is easy to routing and encapsulation procedure in the future.
And the step system forming this fluorescence coating 16 utilizes some glue, glue spraying or encapsulating mode to form this fluorescence coating 16 on this LED crystal particle 10.In order to prevent this fluorescence coating 16 forming process to be stained with in this metal gasket 12, this fluorescence coating 16 is formed before this LED crystal particle 10 in utilizing some glue, glue spraying or encapsulating mode, one is used to be shielded from this metal gasket 12, this metal gasket 12 can be covered up by this shielding, expose the position being intended to form this fluorescence coating 16, and remove this shielding after forming this fluorescent layer, make the end face of this metal gasket be exposed to.This shielding system utilizes photoetching development processing procedure or screen painting processing procedure to make, and the material of this shielding is high-molecular organic material, such as photoresist (also known as photoresist).And the glue amount ratio system of this glue, glue spraying or encapsulating mode surveys result according to the photoelectric characteristic point of this LED crystal particle and controls.
Refer to Fig. 4 A and Fig. 4 B, be the structural representation of the structural representation of another preferred embodiment of the present invention and another preferred embodiment of the present invention.As it can be seen, hold Fig. 1, the present embodiment also provides a kind of light-emitting device, and the present embodiment is unlike the embodiments above to be in that, this fluorescence coating 16 may utilize etching mode and changes the shape of this fluorescence coating 16, and the shape of this fluorescence coating 16 can be trapezoidal or inverted trapezoidal.
Refer to Fig. 5, be the structural representation of another preferred embodiment of the present invention.As shown in the figure, the present embodiment provides a kind of light-emitting device, this light-emitting device 1 is comprise a LED crystal particle 10, at least two metal gasket 12, dielectric layer 18 and a fluorescence coating 16, this LED crystal particle 10 comprises two electrodes 107, and this metal gasket 12 is located on this two electrode 107 of this LED crystal particle 10.This dielectric layer 18 is located on this LED crystal particle 10, and is positioned at this metal gasket 12 around.This fluorescence coating 16 is located on this dielectric layer 18, and is positioned at this metal gasket 12 around, and the outer rim of this fluorescence coating is alignd the outer rim of this LED crystal particle.This fluorescence coating 16 directly changes the light that the light of first wave length produced by this LED crystal particle 10 is at least one second wave length partially or in whole, to form mixed light.The end face of these two metal gaskets be essence at same level, and this fluorescence coating 16 is not covered on this metal gasket 12, and the end face of this metal gasket is exposed to, in order to carry out routing and encapsulation procedure in the future.And this light-emitting device 1 that the present embodiment provides is a mixed light crystal grain, encapsulation can be made directly, need to not mix fluorescent material on packaging body.Wherein the thickness of this fluorescence coating 16 is more than 30 μm.Wherein this LED crystal particle 10 more comprises one first semiconductor layer 101, luminescent layer 103 and one second semiconductor layer 105.
See also Fig. 6, be the schematic flow sheet of another preferred embodiment of the present invention.As it can be seen, hold Fig. 5, Fig. 5 to provide a kind of light-emitting device 1, and this figure provides the manufacture method of a kind of light-emitting device 1, and being intended to manufacture this light-emitting device 1 is first carry out step S10, forms a LED crystal particle 10.Then step S12 is performed, form at least two metal gasket 12 on this two electrode 107 of this LED crystal particle 10, the end face of these two metal gaskets is that essence is at same level, perform step S13 again, form a dielectric layer 18 on this LED crystal particle 10, then step S14 is performed, form a fluorescence coating 16 on this dielectric layer 18, the outer rim of this fluorescence coating is alignd the outer rim of this LED crystal particle, this fluorescence coating 16 is not covered on this metal gasket 12, to expose the end face of this metal gasket 12, so it is easy to routing and encapsulation procedure in the future.
And the step system forming this fluorescence coating 16 utilizes some glue, glue spraying or encapsulating mode to form this fluorescence coating 16 on this LED crystal particle 10.In order to prevent this fluorescence coating 16 forming process to be stained with on this metal gasket 12, this fluorescence coating 16 is formed before this LED crystal particle 10 in utilizing some glue, glue spraying or encapsulating mode, one is used to be shielded from this metal gasket 12, this metal gasket 12 can be covered up by this shielding, expose the position being intended to form this fluorescence coating 16, and remove this shielding after forming this fluorescent layer, make the end face of this metal gasket be exposed to.This shielding system utilizes photoetching development processing procedure or screen painting processing procedure to make, and the material of this shielding is high-molecular organic material, such as photoresist.
Refer to Fig. 7, be the structural representation of another preferred embodiment of the present invention.As shown in the figure, hold Fig. 1, this light-emitting device 1 that Fig. 1 provides is intended to be packaged processing procedure, this light-emitting device 1 is located on a carrier 2, then utilizes routing (wirebond, a kind of metal wire) to connect this two metal gasket 12, a packaging body 3 is finally utilized to be covered on this carrier 2, and it is coated with this light-emitting device 1, and the material of this packaging body 3 is high-molecular organic material, it more can comprise fluorescent material.The high-molecular organic material of this fluorescence coating 16 of the high-molecular organic material of this packaging body 3 and above-mentioned Fig. 1 also differs, and this packaging body 3 is also non-for make with the time with this fluorescence coating 16, and both baking times are also different, it is effectively reduced stress problem produced by this packed light-emitting device 1.And this encapsulating structure of the present embodiment can be applicable to the embodiment of Fig. 5.
Refer to Fig. 8, be the schematic flow sheet of another preferred embodiment of the present invention.As shown in the figure, hold Fig. 7, the method that this light-emitting device 1 that Fig. 1 provides is intended to be packaged processing procedure, first carries out step S16, arranges a carrier 2 under this light-emitting device 1, and it is relative with this fluorescence coating 16, then perform step S18, utilize routing to connect this two metal gasket 12, finally perform step S19, utilize a packaging body 3 to be covered on this carrier 2, and be coated with this light-emitting device 1.The method for packing that the present embodiment provides can be used for Fig. 5 this light-emitting device 1 provided, and repeats no more in this.
From the foregoing, the present invention provides a kind of light-emitting device and manufacture method thereof, it is a feature of the present invention that and make on the direct coated light emitting diodes crystal grain of fluorescence coating and make metal gasket be exposed to outside fluorescence coating, carry out routing and encapsulation procedure to facilitate in the future.Another light-emitting device provided by the present invention is single mixed light crystal grain, it is made directly and encapsulates, it is not necessary to mix fluorescent material on packaging body, so on manufacturing process fluorescence coating and packaging body not for carry out simultaneously, and because of both be different materials, such processing procedure arrangement can effectively reduce produced stress problem in packed light-emitting device.
Only as described above, it is only a preferred embodiment of the present invention, not being used for limiting scope of the invention process, the equalization such as done according to the shape described in the present patent application the scope of the claims, structure, feature and spirit changes and modifies, and all should be included in the claim of the present invention.
Claims (13)
1. a light-emitting device, is characterized in that, this light-emitting device comprises:
One LED crystal particle；
At least two metal gasket, is located on this LED crystal particle；And
One fluorescence coating, is directly arranged in this LED crystal particle and is provided with on that surface of this metal gasket, and be positioned at the surrounding of this metal gasket and expose this metal gasket, and the thickness of described fluorescence coating is more than 30 μm；
Wherein, this LED crystal particle comprises the first semiconductor layer, luminescent layer and the second semiconductor layer, this luminescent layer is arranged between this first semiconductor layer and this second semiconductor layer, this luminescent layer and this second semiconductor layer expose at least this first semiconductor layer of part makes these two metal gaskets be separately positioned on this first semiconductor layer and this second semiconductor layer, and the end face of these two metal gaskets is that essence is at same level；And
Wherein, the end face of this fluorescence coating is plane and the end face higher than these two metal gaskets between these two metal gaskets, the outer rim of this fluorescence coating is alignd the outer rim of this LED crystal particle, and the light of first wave length produced by this LED crystal particle is converted to the light of second wave length at least partially by this fluorescence coating, to form mixed light.
2. light-emitting device according to claim 1, is characterized in that, the material of described fluorescence coating comprises a fluorescent material and a high-molecular organic material.
3. light-emitting device according to claim 2, is characterized in that, the material of described fluorescent material is one or more in red fluorescence powder, green emitting phosphor, blue colour fluorescent powder.
4. light-emitting device according to claim 1, is characterized in that, this light-emitting device is further provided with:
One carrier, is located at the side that this LED crystal particle is relative with this fluorescence coating.
5. light-emitting device according to claim 4, is characterized in that, this light-emitting device is further provided with:
One packaging body, is located on this carrier, and is coated with this LED crystal particle, this metal gasket and this fluorescence coating.
6. light-emitting device according to claim 5, is characterized in that, the material of described packaging body is high-molecular organic material.
7. light-emitting device according to claim 5, is characterized in that, the material of described packaging body more comprises a fluorescent material.
8. light-emitting device according to claim 1, is characterized in that, this light-emitting device more comprises:
One dielectric layer, is located between this LED crystal particle and this fluorescence coating.
9. a manufacture method for light-emitting device, is characterized in that, this manufacture method comprises:
Form a LED crystal particle, this LED crystal particle includes the first semiconductor layer, luminescent layer and the second semiconductor layer, this luminescent layer is arranged at this first semiconductor layer between this second semiconductor layer, and this luminescent layer exposes at least this first semiconductor layer of part with this second semiconductor layer；
Forming at least two metal gasket on this LED crystal particle, wherein these two metal gaskets are respectively arranged at this first semiconductor layer and this second semiconductor layer, and the end face of these two metal gaskets is that essence is at same level；And
Directly form a fluorescence coating on the surface that this LED crystal particle is provided with these two metal gaskets, this fluorescence coating is positioned at the surrounding of these two metal gaskets and exposes this two metal gaskets, the end face of this fluorescence coating is plane and the end face higher than these two metal gaskets between these two metal gaskets, the outer rim of this fluorescence coating is alignd the outer rim of this LED crystal particle, and the thickness of described fluorescence coating is more than 30 μm；
Wherein, forming this fluorescence coating before this LED crystal particle, being initially formed one and be shielded from this metal gasket, then form this fluorescence coating in this LED crystal particle, wherein this shielding is covered this metal gasket and exposes the position being intended to form this fluorescence coating.
10. the manufacture method of light-emitting device according to claim 9, is characterized in that, the material of described fluorescence coating comprises a fluorescent material and a high-molecular organic material.
11. the manufacture method of light-emitting device according to claim 10, it is characterized in that, described fluorescent material is one or more in red fluorescence powder, green emitting phosphor, blue colour fluorescent powder.
12. the manufacture method of light-emitting device according to claim 9, it is characterized in that, described manufacture method more comprises:
One carrier is set in this LED crystal particle side relative with this fluorescence coating.
13. the manufacture method of light-emitting device according to claim 9, it is characterized in that, described manufacture method more comprises:
Form a dielectric layer between this LED crystal particle and this fluorescence coating.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910131551.0A CN101859845B (en) | 2009-04-07 | 2009-04-07 | Light-emitting device and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910131551.0A CN101859845B (en) | 2009-04-07 | 2009-04-07 | Light-emitting device and manufacture method thereof |
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| CN101859845A CN101859845A (en) | 2010-10-13 |
| CN101859845B true CN101859845B (en) | 2016-07-13 |
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| CN200910131551.0A Active CN101859845B (en) | 2009-04-07 | 2009-04-07 | Light-emitting device and manufacture method thereof |
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| CN101980382B (en) * | 2010-10-15 | 2012-03-28 | 深圳市瑞丰光电子股份有限公司 | LED chip manufacturing method, LED chip and LED |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6744196B1 (en) * | 2002-12-11 | 2004-06-01 | Oriol, Inc. | Thin film LED |
| CN1897313A (en) * | 2005-07-12 | 2007-01-17 | 璨圆光电股份有限公司 | Light-emitting diodes and its packing structure |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6744196B1 (en) * | 2002-12-11 | 2004-06-01 | Oriol, Inc. | Thin film LED |
| CN1897313A (en) * | 2005-07-12 | 2007-01-17 | 璨圆光电股份有限公司 | Light-emitting diodes and its packing structure |
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