CN105870114B - Luminescent device and preparation method thereof, light-emitting device - Google Patents
Luminescent device and preparation method thereof, light-emitting device Download PDFInfo
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- CN105870114B CN105870114B CN201610467039.3A CN201610467039A CN105870114B CN 105870114 B CN105870114 B CN 105870114B CN 201610467039 A CN201610467039 A CN 201610467039A CN 105870114 B CN105870114 B CN 105870114B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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Abstract
The invention discloses a kind of luminescent device and preparation method thereof, light-emitting device, a kind of luminescent device, including:Upper transparent conductive film, lower transparent conductive film and multiple luminescence units, the luminescence unit sandwiched are simultaneously electrically connected between the upper transparent conductive film and lower transparent conductive film, and the luminescence unit includes the LED luminescence chips of two forward and reverse parallel connections.AC power driving may be used in the flexible light-emitting device, shines uniform and stable, driving circuit is simple.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of light-emitting film and preparation method thereof.
Background technology
In recent years, due to the appearance of large quantities of new technologies such as flexible display, wearable electronic, flexible luminescence technology
It is of increased attention.Flexible light-emitting film luminous intensity based on LED chip is high, and service life is long, has very wide
Application prospect.Traditional light-emitting diode chip for backlight unit needs work under low pressure perseverance DC condition, need to be equipped with complicated perseverance directly
Stream source;Simultaneously as traditional light-emitting diode chip for backlight unit has leak channel etc. is a series of to ask there are current expansion energy force difference
Topic, results in luminescent device non-uniform light, luminous efficiency drastically declines under high current.Therefore, flexible shine is solved
The problem of driving circuit complexity and non-uniform light of device, be the key that prepare practical flexible light-emitting film system.
Invention content
(1) technical problems to be solved
In view of above-mentioned technical problem, the present invention provides a kind of luminescent device and preparation method thereof, the luminescent devices
It shines uniform and stable, driving circuit is simple.
(2) technical solution
According to an aspect of the invention, there is provided a kind of luminescent device.The luminescent device includes:It is upper transparent
Conductive film, lower transparent conductive film and multiple luminescence units, the luminescence unit sandwiched are simultaneously electrically connected at described upper
Between bright conductive film and lower transparent conductive film, the luminescence unit includes the LED luminescence chips of two forward and reverse parallel connections.
According to another aspect of the present invention, a kind of preparation method of luminescent device is provided.The preparation method packet
It includes:Transparent conductive film and lower transparent conductive film in preparation;Prepare multiple luminescence units, the luminescence unit include two just
The LED chip of reverse parallel connection;The vapor deposition that multiple luminescence units are arranged in lower transparent conductive film has the face of transparent conductive material
On;Transparent conductive film in attaching so that the vapor deposition of upper transparent conductive film has the face paste of transparent conductive material to invest luminescence unit
Top electrode on, form flexible light-emitting film structure.
According to another aspect of the present invention, a kind of light-emitting device is provided.The light-emitting device includes:AC power and on
The luminescent device stated, the both ends lead of AC power respectively with the upper transparent conductive film of the luminescent device, under
Transparent conductive film is electrically connected, multiple luminescence units for driving the luminescent device with exchange way.
(3) advantageous effect
It can be seen from the above technical proposal that luminescent device of the present invention and preparation method thereof, light-emitting device have with
Lower advantageous effect:
(1) the LED luminescence chips that luminescence unit between two conductive films includes two forward and reverse parallel connections are folded in so that soft
Property luminescent device formed capacitance type structure, realize ac driven light-emitting, to simplify driving circuit structure;
(2) insulation filler is filled between luminescence unit, insulation filler makes on the conductive film of luminescent device
Electric current is extending transversely good, and it is uniform to have ensured that luminescent device shines.
Description of the drawings
Fig. 1 is flexible light-emitting device structural schematic diagram of the embodiment of the present invention;
Fig. 2 is the structural schematic diagram of luminescence unit in Fig. 1;
Fig. 3 is the flow chart that the embodiment of the present invention manufactures flexible light-emitting component;
Fig. 4 is the flow chart that luminescence unit is manufactured in Fig. 3.
【Main element】
The upper transparent conductive films of 1-;Transparent conductive film under 2-;3- luminescence units;
4-LED chips;5- electrically-conductive backing plates;6- metallic reflectors;
7- transparent electrode layers;The first insulation fillers of 8-;9- AC powers;
The second insulation fillers of 10-.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
The present invention provides a kind of flexible light-emitting component, and as shown in Fig. 1, which employs capacitance structures, include mainly:It is upper saturating
The multiple luminescence units 3 of bright conductive film 1, lower transparent conductive film 2 and its sandwiched between them.The flexibility light-emitting component can
It is luminous to drive to be separately connected upper transparent conductive film 1, lower transparent conductive film 2 by external AC power circuit, it keeps away
Exempt from using complicated constant dc current source.
Each luminescence unit 3 includes the LED chip 4 of two forward and reverse parallel connections, and concrete structure is as shown in Fig. 2 comprising
Two LED of forward and reverse parallel connection are arranged on metallic reflector 6 for electrically-conductive backing plate 5, the metallic reflector 6 being arranged on electrically-conductive backing plate
The N electrode of chip 4, i.e. the first LED chip is electrically connected with metallic reflector, P electrode and the metallic reflector electricity of the second LED chip
Connection, the P electrode of the first LED chip and setting transparent electrode layer 7, the material of the transparent electrode layer in the N electrode of the second LED chip
Material be indium tin oxide (ITO), zinc oxide aluminum (AZO), copper, graphene, carbon nanotube, nano-Ag particles, nano silver wire,
One kind in polymeric membrane, composite transparent conductive film or its arbitrary combination, are filled between metallic reflector 6 and transparent electrode layer 7
There is the second insulation filler 10, which is filled between the first LED chip and the second LED chip and outer
It encloses, plays the insulation made between two LED chips, reduce electric leakage, prevent the effect of luminescence unit internal short-circuit, this shines single
Exchange electric drive may be used in member, and two LED chips alternately shine.
Further include equally being folded in transparent conductive film 1, lower electrically conducting transparent in flexible light-emitting component shown in Fig. 1
The first insulation filler 8 between film 2, which is filled between multiple luminescence units 3 and periphery, the
One insulation filler 8 makes the electric current on the upper and lower transparent conductive film of luminescent device extending transversely good, has ensured flexibility
Luminescent device shines uniform.
PDMS, resin, electro-insulating rubber, Y can be selected in above-mentioned first, second insulation filler2O3、Si3N4、Al2O3、
BaTiO3、MgO、Ta2O5、GeO2、Sm2O3、HfO2、PbTiO3、TiO2One kind in equal insulating materials or its arbitrary combination.
It will be appreciated by those skilled in the art that although two conductive films up and down of flexible light-emitting component are in the present embodiment
Transparent conductive film, but the present invention is not limited thereto, and at least one of two conductive films up and down of flexible light-emitting component are
Bright conductive film.
The present invention also provides a kind of manufacturing methods of flexible light-emitting component, as shown in figure 3, specifically including following steps:
Step S301:Transparent conductive film and lower transparent conductive film, specially steam on flexible transparent film in preparation
Plate layer of transparent conductive material;
The flexible transparent film is polyethylene terephthalate (PET), makrolon (PC), poly-methyl methacrylate
One kind in ester (PMMA) or its arbitrary combination.
The transparent conductive material be indium tin oxide (ITO), zinc oxide aluminum (AZO), copper, graphene, carbon nanotube,
One kind in nano-Ag particles, nano silver wire, polymeric membrane, composite transparent conductive film or its arbitrary combination.
Step S302:Multiple luminescence units are prepared, the luminescence unit includes the LED chip of two forward and reverse parallel connections;
Step S303:The vapor deposition that multiple luminescence units are arranged in lower transparent conductive film has the face of transparent conductive material
On;Above-mentioned arrangement may be used array arrangement, random scatter, etc. various arrangements mode.
Step S304:The first insulation filler of between luminescence unit and periphery filling, will send out on lower transparent conductive film
The top electrode of light unit is exposed;
Step S305:Transparent conductive film in attaching so that the vapor deposition of upper transparent conductive film has the face of transparent conductive material
It is attached in the top electrode of luminescence unit, forms flexible light-emitting film structure.
Wherein step S101 can be with S102 reversed orders.
Step S302 specifically can following steps, as shown in Figure 4:
Step S302a:One layer of reflective metal layer is made in the non-light-emitting surface of electrically-conductive backing plate;
The electrically-conductive backing plate can select silicon substrate, aluminum substrate etc..
Step S302b:Multiple units are divided on the electrically-conductive backing plate for be formed with reflective metal layer, are integrated in each unit
The LED luminescence chips of two forward and reverse parallel connections, and between LED luminescence chips and periphery filling the second insulation filler;
Step S302c:Layer of transparent is deposited on the electrically-conductive backing plate for being formed with LED luminescence chips and the second insulation filler
Electrode layer;
The material of the transparent electrode layer is indium tin oxide (ITO), zinc oxide aluminum (AZO), copper, graphene, carbon
One kind in nanotube, nano-Ag particles, nano silver wire, polymeric membrane, composite transparent conductive film or its arbitrary combination.
Step S302d:The board structure that step S302c is obtained forms multiple luminescence units by unit cutting.
Grown epitaxial layer on substrate may be used in LED chip in step S302b, is followed successively by N-type GaN, Quantum Well,
One single chip is made in epitaxial wafer by AlN electronic barrier layers, p-type GaN, and makes transparent conductive electrode on the faces PN to be formed.
Substrate may include silicon, doped silicon (doped silicon), germanium, SiGe (silicon germanium), semiconductor
Compound (semiconductor compound) or other semiconductor materials one of or any combinations.
It will be appreciated by those skilled in the art that the direction term mentioned in embodiment, for example, "upper", "lower", " preceding ",
" rear ", "left", "right" etc. are only the directions of refer to the attached drawing, are not used for limiting the scope of the invention.
The step of must occurring unless specifically described or sequentially, there is no restriction for the sequences of above-mentioned steps in listed above, and
It can change or rearrange according to required design.
The present invention also provides a kind of flexible light-emitting devices, as shown in Fig. 1, including luminescent device above-mentioned and exchange
The both ends lead of power supply, AC power is electrically connected with the upper and lower transparent conductive film of luminescent device respectively, using alternating current
To drive luminescent device.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical solution and advantageous effect
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention
Within the scope of shield.
Claims (13)
1. a kind of luminescent device, which is characterized in that including:
Upper transparent conductive film (1);
Lower transparent conductive film (2);And
Multiple luminescence units (3), sandwiched are simultaneously electrically connected at the upper transparent conductive film (1) and lower transparent conductive film (2)
Between, the luminescence unit (3) includes the LED luminescence chips of two forward and reverse parallel connections,
The luminescence unit (3) includes:
Electrically-conductive backing plate (5);
Metallic reflector (6), is formed on the electrically-conductive backing plate;
The LED luminescence chips of described two forward and reverse parallel connections, are set on the metallic reflector (6);And
Transparent electrode layer (7) is formed on the LED luminescence chips of described two forward and reverse parallel connections;
The LED luminescence chips of described two forward and reverse parallel connections are electric with the transparent electrode layer (7) and the metallic reflector (6)
Connection.
2. luminescent device according to claim 1, which is characterized in that the luminescence unit (3) further includes:
Second insulation filler (10) is folded between the metallic reflector (6) and the transparent electrode layer (7), is filled in
Between the LED luminescence chips of described two forward and reverse parallel connections and periphery.
3. luminescent device according to claim 1, which is characterized in that further include:
First insulation filler (8) is folded between the upper transparent conductive film (1) and the lower transparent conductive film (2),
It is filled between the multiple luminescence unit (3) and peripheral.
4. according to any luminescent device in claims 1 to 3, it is characterised in that:The upper electrically conducting transparent is thin
Film (1) and the lower transparent conductive film (2) are flexible transparent conductive film, transparent by being deposited on flexible transparent film
Conductive material forms.
5. luminescent device according to claim 4, it is characterised in that:The flexible transparent film is ethylene
One kind in diol ester, makrolon, polymethyl methacrylate or its arbitrary combination.
6. luminescent device according to claim 4, it is characterised in that:The transparent conductive material is indium tin metal oxygen
One kind in compound, zinc oxide aluminum, copper, graphene, carbon nanotube, nano-Ag particles, nano silver wire, polymeric membrane or it is arbitrary
Combination.
7. luminescent device according to claim 2, it is characterised in that:Second insulation filler (10) is selected
PDMS, resin, electro-insulating rubber, Y2O3、Si3N4、Al2O3、BaTiO3、MgO、Ta2O5、GeO2、Sm2O3、HfO2、PbTiO3、TiO2In
One kind or its arbitrary combine.
8. luminescent device according to claim 3, it is characterised in that:First insulation filler (8) is selected
PDMS, resin, electro-insulating rubber, Y2O3、Si3N4、Al2O3、BaTiO3、MgO、Ta2O5、GeO2、Sm2O3、HfO2、PbTiO3、TiO2In
One kind or its arbitrary combine.
9. a kind of preparation method of luminescent device, which is characterized in that including:
Step S301:Transparent conductive film (1) and lower transparent conductive film (2) in preparation;
Step S302:Multiple luminescence units (3) are prepared, the luminescence unit (3) includes the LED chip of two forward and reverse parallel connections;
Step S303:The vapor deposition that multiple luminescence units (3) are arranged in lower transparent conductive film (2) has the face of transparent conductive material
On;
Step S305:Transparent conductive film (1) in attaching so that the vapor deposition of upper transparent conductive film (1) has transparent conductive material
Face paste invests in the top electrode of luminescence unit (3), forms flexible light-emitting film structure.
10. preparation method according to claim 9, it is characterised in that:Further include between step 303 and step 305:
Step S304:The first insulation filler (8) is filled between luminescence unit (3) and periphery on lower transparent conductive film (2),
The top electrode of luminescence unit (3) is exposed.
11. preparation method according to claim 9 or 10, it is characterised in that:Step S302 includes:
Step S302a:One layer of reflective metal layer (6) is formed in the non-light-emitting surface of electrically-conductive backing plate (5);
Step S302b:Multiple units are divided on the electrically-conductive backing plate (5) for being formed with reflective metal layer (6), are collected in each unit
At the LED luminescence chips of two forward and reverse parallel connections;
Step S302c:Layer of transparent electrode layer (7) is deposited on the electrically-conductive backing plate (5) for be formed with LED luminescence chips;
Step S302d:The board structure that step S302c is obtained forms multiple luminescence units (3) by unit cutting.
12. preparation method according to claim 11, it is characterised in that:Step S302b further includes:
Between LED luminescence chips and the second insulation filler (10) is filled in periphery.
13. a kind of light-emitting device, it is characterised in that:Including:
AC power (9);And
Any luminescent device in claim 1 to 8;
Wherein, the both ends lead of the AC power (9) respectively with the upper transparent conductive film of the luminescent device (1),
Lower transparent conductive film (2) electrical connection, multiple luminescence units (3) for driving the luminescent device with exchange way.
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CN109819152B (en) * | 2019-02-27 | 2022-07-01 | 维沃移动通信有限公司 | Focusing camera module and terminal equipment |
CN110996446B (en) * | 2020-01-03 | 2022-03-11 | 中国计量大学 | Alternating current driven LED device and light emitting method thereof under alternating current power supply |
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CN101540314A (en) * | 2008-03-19 | 2009-09-23 | 财团法人工业技术研究院 | Light-emitting diode element and forming method thereof |
CN102588788A (en) * | 2012-02-16 | 2012-07-18 | 南通恺誉照明科技有限公司 | Mains supply LED (light emitting diode) module |
CN202889695U (en) * | 2012-04-16 | 2013-04-17 | 刘晓博 | High-frequency AC LED lamp for illumination |
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