CN201918389U - LED device with electrostatic damage protection function - Google Patents
LED device with electrostatic damage protection function Download PDFInfo
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- CN201918389U CN201918389U CN2010206751957U CN201020675195U CN201918389U CN 201918389 U CN201918389 U CN 201918389U CN 2010206751957 U CN2010206751957 U CN 2010206751957U CN 201020675195 U CN201020675195 U CN 201020675195U CN 201918389 U CN201918389 U CN 201918389U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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Abstract
The utility model relates to an LED device with an electrostatic damage protection function, which comprises an LED chip and an inverted substrate. The LED chip comprises a light emitting area and an electrostatic protection area, wherein the light emitting area comprises an LED; the electrostatic protection area comprises at least two electrostatic protection diodes; and the LED and the electrostatic protection diodes are isolated through an isolation groove. The inverted substrate comprises a surface insulation base and a metal wire layer covered on the surface of the base. The LED chip is invertedly arranged on the inverted substrate, and the electrostatic protection diodes are connected in series and then reversely connected with the LED in parallel through the metal wire layer on the inverted substrate. The LED device has good anti-electrostatic discharge (ESD) performance, can test reverse leakage current to discriminate the defective products and also can ensure the long-term reliability.
Description
Technical field
The utility model belongs to the manufacturing field of luminescent device, relates to a kind of luminescent device and manufacture method thereof with static damage protective function.
Background technology
Along with improving constantly of LED light efficiency,,, manifest the trend that LED replaces fluorescent lamp, incandescent lamp gradually as LCD backlight, automotive lighting light source etc. in some field.In the general illumination field, great power LED has the great potential that replaces conventional light source too.But along with the increase of led chip unit are power and the raising of chip integration, heat dissipation problem and electrostatic defending problem become the key factor that influences LED stability gradually.
Wherein, improving antistatic capacity is the important requirement that improves LED stability.At present, the general anti-static ability of improving LED for a LED backward diode in parallel or bidirectional diode that adopts.For positive cartridge chip or vertical stratification chip, generally adopt, but this method has increased production cost, and influenced the stability of product because of the increase that connects gold thread an antistatic diode and the method that LED is packaged together.
Flip-chip generally adopts silicon chip to be used as flip-chip substrate.Silicon circuit integrated technique maturation, easily by technologies such as doping cheaply at silicon internal production antistatic diode.See also Figure 1A, China utility model patent CN100386891C discloses a kind of high anti-static high efficiency light-emitting diode, it comprises substrate 10 and the light-emitting diode chip for backlight unit 20 that utilizes a conductive-type semiconductor material, be manufactured with integrated bi-directional voltage stabilizing diode 11 on the substrate 10, light-emitting diode chip for backlight unit 20 mainly comprises a transparent sapphire substrate 21 and the GaN structure sheaf 22 on this substrate and P electrode 23, N electrode 24, with light-emitting diode chip for backlight unit 20 upside-down mountings on this substrate 10.Because integrated antistatic protection bi-directional voltage stabilizing diode 11 has effectively strengthened the light-emitting diode anti-static-discharge capability on the substrate 10, can realize high-power output, reduces cost, and improves effects such as device reliability.See also Figure 1B, it is the equivalent circuit diagram of structure shown in Figure 1.Though this light emitting diode construction has esd protection function preferably, but still has defective.See also Fig. 1 C, it is the equivalent circuit diagram of structure series mould set chip shown in Figure 1.Because n-Si has conductivity preferably, when adopting this method to realize the series mould set chip on same silicon chip substrate, the n utmost point that can have all esd protection diodes is by silicon substrate problem altogether.When the series connection chip more than some, required driving voltage is during greater than the reverse breakdown voltage of single antistatic diode, the antistatic diode 31 of series connection negative terminal may reverse breakdown, and with voltage clamp in its puncture voltage, influenced the driven of module chip.Therefore this inverted structure and be not suitable for being used for making module chip.
In addition, disclose on same Sapphire Substrate among the novel patent US6547249B2 of U.S. utility, made two reverse parallel connection LED, just can play the effect of electrostatic protection between two diodes mutually.Adopt the method for single backward diode in parallel, increase under the prerequisite of a small amount of manufacturing cost, improved the anti-static-discharge capability of LED, but there is certain problem in this structure in sample test.The LED reverse leakage current is an importance of reflection LED performance, does not screen the bigger defective products of reverse leakage if reverse leakage is not tested, and defective products may reliability go wrong in long-term the use.The test voltage of reverse leakage current is generally than forward cut-in voltage height.Sow basic LED as nitrogenize, the general reverse voltage that applies 5V at the LED two ends is tested its reverse current.For with the diode of LED reverse parallel connection, the 5V voltage that applies then is forward voltage.The operating voltage of general gallium nitride based LED is less than 3.5V, and when testing so, backward diode must be in the forward conduction state, therefore can't test the reverse leakage current of LED.
The utility model content
The purpose of this utility model is to overcome shortcoming of the prior art with not enough, provides a kind of and has good anti-ESD function, and can carry out the LED light-emitting diode of reverse voltage test.
A kind of LED device with static damage protective function comprises light-emitting diode chip for backlight unit and flip-chip substrate.This light-emitting diode chip for backlight unit comprises a luminous zone and an electrostatic defending district, wherein, this luminous zone comprises a light-emitting diode, and this electrostatic defending district comprises at least two electrostatic defending diodes, and this light-emitting diode and electrostatic defending diode are isolated mutually by isolation channel.This flip-chip substrate comprises the substrate of a surface insulation, and covers the metal line layer on the substrate surface.This light-emitting diode chip for backlight unit upside-down mounting on this flip-chip substrate, by the metal line layer on this flip-chip substrate, this electrostatic defending diode serial connection then with this light-emitting diode reverse parallel connection.
With respect to prior art, LED device of the present utility model not only has good antistatic effect, can reduce the probability that LED is subjected to environment or circuit electrostatic damage in production flow process and terminal applies life cycle; Can carry out integrated with existing technology easily and can not increase more manufacturing cost; Also can monitor LED reverse leakage situation according to routine, screening falls to have the product of potential problems, improves the reliability of product.
In order to understand the utility model more clearly, set forth embodiment of the present utility model below with reference to description of drawings.
Description of drawings
Figure 1A is the structural representation of prior art LED device.
Figure 1B is the equivalent circuit diagram of structure shown in Figure 1.
Fig. 1 C is the equivalent circuit diagram of structure series mould set chip shown in Figure 1.
Fig. 2 is the cross-sectional view of embodiment one that the utlity model has the LED device of static damage protective function.
Fig. 3 is the upward view of light-emitting diode chip for backlight unit 100 shown in Figure 2.
Fig. 4 is the vertical view of flip-chip substrate 200 shown in Figure 2.
Fig. 5 is the equivalent circuit diagram of structure shown in Figure 2.
Fig. 6 A-6F is the structural representation of each key step of the manufacture method of LED device shown in Figure 2.
Fig. 7 is the cross-sectional view of embodiment two that the utlity model has the LED device of static damage protective function.
Embodiment
Embodiment one
Please consult Fig. 2 simultaneously, it is the cross-sectional view of embodiment one that the utlity model has the LED device of static damage protective function.This LED device comprises a light-emitting diode chip for backlight unit 100 and flip-chip substrate 200.These light-emitting diode chip for backlight unit 100 upside-down mountings are on this flip-chip substrate 200.
Please consult Fig. 3 simultaneously, it is the upward view of light-emitting diode chip for backlight unit 100 shown in Figure 1.This light-emitting diode chip for backlight unit 100 comprises a luminous zone A and an electrostatic defending district B, wherein, this luminous zone A comprises a light-emitting diode, and this electrostatic defending district B comprises three electrostatic defending diodes, and this luminous zone A area occupied is greater than 50% of this light-emitting diode chip for backlight unit gross area.
Further, this light-emitting diode chip for backlight unit 100 comprises a substrate 101, a n type semiconductor layer 102, an active layer 103, a p type semiconductor layer 104, a passivation layer 105, an electrode layer 106, and isolation channel 107, this electrode layer 106 comprises n type electrode layer 106a and p type electrode layer 106b.Wherein, this n type semiconductor layer 102 covers this substrate 101 surfaces, and is divided into four separate unit by isolation channel 107 isolation, and wherein correspondence comprises a light emitting diode and three electrostatic defending diodes.This active layer 103 covers the part surface of the n type semiconductor layer 102 of light emitting diode and electrostatic defending diode, and part n type semiconductor layer 102 is exposed.This p type semiconductor layer 104 covers this active layer 103 surfaces.This passivation layer 105 covers the n type semiconductor layer 102 that exposes of part and the surface of p type semiconductor layer 104, makes mutually insulated between each n type semiconductor layer 102 and the p type semiconductor layer 104.This n type electrode layer 106a covers n type semiconductor layer 102 surfaces of exposing between the passivation layer 105, and this p type electrode layer 106b covers p type semiconductor layer 104 surfaces of exposing between the passivation layer 105.Thereby on this substrate 101, form a light-emitting diode and three electrostatic defending diodes.
See also Fig. 4, it is the planar structure schematic diagram of flip-chip substrate 200.This flip-chip substrate 200 comprises a substrate 201, an insulating barrier 202, a metal line layer 203 and salient point soldered ball 204.This insulating barrier 202 covers the surface of this substrate 201, and this metal line layer 203 covers this surface of insulating layer, and forms a conductive pattern.This salient point soldered ball 204 is arranged on the surface of metal line layer 203, as with the tie point of the electrode layer 106 of light-emitting diode chip for backlight unit 100.Please consult Fig. 5 simultaneously, it is the equivalent circuit diagram of structure shown in Figure 1.These light-emitting diode chip for backlight unit 100 upside-down mountings are on this flip-chip substrate 200, the light-emitting diode of this light-emitting diode chip for backlight unit 100 and electrostatic defending diode are realized being electrically connected by the metal line layer on this flip-chip substrate 200 203, particularly, these three electrostatic defending diode serial connections, the n utmost point of this light-emitting diode is connected with the electrostatic defending diode p utmost point of these three serial connections, the p utmost point of this light-emitting diode is connected with the electrostatic defending diode n utmost point of these three serial connections, thereby the electrostatic defending diode that three of this light-emitting diode and these are connected in series forms reverse parallel connection.
This substrate 101 is specially sapphire (Al
2O
3) substrate.
This substrate 201 is specially has the substrate that the thermal conductive resin material is made, as silicon substrate, metal substrate etc.
The material of this salient point soldered ball 204 is the multilayer material or the alloy of single metal material such as lead, tin, gold, silver or copper or above-mentioned material.
See also Fig. 6 A to Fig. 6 F, it is the structural representation of each key step of the manufacture method of the utility model LED device.The step of manufacturing of this luminescent device is specific as follows:
Step S1: deposit n type semiconductor layer 102, active layer 103 and p type semiconductor layer 104 in regular turn on substrate 101 surfaces.See also Fig. 6 A, particularly, by epitaxy technique successively in substrate 101 surface deposition n type semiconductor layer 102, active layer 103, p type semiconductor layer 104.The n type semiconductor layer comprises that in regular turn resilient coating is sowed in the low temperature nitrogenize, layer is sowed in the nitrogenize of not mixing, layer is sowed in the nitrogenize of n type (figure does not show).Active layer 203 is multi layer quantum well layer (MQW).P type semiconductor layer 204 comprises that in regular turn p type aluminium nitride is sowed layer and layer (figure does not show) is sowed in the nitrogenize of p type.
Step S2: form isolation channel 107.See also Fig. 6 B, particularly, provide first mask (figure does not show) that adopts silicon dioxide or metallic film to make above substrate 101, this mask has slot.Adopt dry etching or wet etching then, in the aperture of mask the p type semiconductor layer 102 on the substrate 101, active layer 103 and n type semiconductor layer 104 are carried out etching and expose, thereby form isolation channel 107 until substrate 101.And this substrate isolation is divided into four separate unit by isolation channel 107, wherein correspondence comprises a light emitting diode and three electrostatic defending diodes.
Step S3: etching part p type semiconductor layer 104 and active layer 103 make part n type semiconductor layer 102 expose.See also Fig. 6 C, particularly, provide one second mask (figure does not show) above substrate 101, this mask exposes the part p type semiconductor layer 104 of light emitting diode and three electrostatic defending diodes.Adopt dry etching or wet etching then, mask not covering place the p type semiconductor layer 104 on the substrate 101 and active layer 103 carried out etching expose until n type semiconductor layer 102.
Step S4: form passivation layer 105.See also Fig. 6 D, form passivation layers 105 on this p type semiconductor layer 104 and n type semiconductor layer 102 surfaces of exposing.The material of this passivation layer 105 is silicon dioxide or alchlor or silicon nitride or thin polymer film etc.And then adopting dry etching or wet etching on the passivation layer 105 of light emitting diode and three electrostatic defending diodes, to etch n utmost point window and p utmost point window, this n type semiconductor layer 102 and p type semiconductor layer 104 expose at n utmost point window and p utmost point window portion respectively.
Step S5: form electrode layer 106.See also Fig. 6 E, particularly, adopt Film forming method on n utmost point window and p utmost point window, to form n type electrode layer 106a and p type electrode layer 106b successively respectively respectively.The material of this electrode layer 106 is the multilayer material or the alloy of single metal material such as lead, tin, gold, silver or copper or above-mentioned material.
Step S6: in substrate 201, form an insulating barrier 202, a metal line layer 203 and salient point soldered ball 204 in regular turn, thereby form flip-chip substrate 200.
Step S7: with light-emitting diode chip for backlight unit 100 upside-down mountings on flip-chip substrate 200.See also Fig. 6 F, on flip-chip substrate 200, the electrode layer 106 of light-emitting diode chip for backlight unit 100 is connected with salient point soldered ball 204 on the flip-chip substrate 200 light-emitting diode chip for backlight unit 100 upside-down mountings.
Embodiment two
See also Fig. 7, it is the cross-sectional view of embodiment two that the utlity model has the LED device of static damage protective function.This LED device comprises a light-emitting diode chip for backlight unit 100 and flip-chip substrate 200.These light-emitting diode chip for backlight unit 100 upside-down mountings are on this flip-chip substrate 200.
Further, this light-emitting diode chip for backlight unit 100 comprises a substrate 101, a n type semiconductor layer 102, an active layer 103, a p type semiconductor layer 104, an electrode layer 106, and isolation channel 107, this electrode layer 106 comprises n type electrode layer 106a and p type electrode layer 106b.Wherein, this n type semiconductor layer 102 covers this substrate 101 surfaces, and is divided into four separate unit by isolation channel 107 isolation, and wherein correspondence comprises a light emitting diode and three electrostatic defending diodes.This active layer 103 covers the part surface of the n type semiconductor layer 102 of light emitting diode and electrostatic defending diode, and part n type semiconductor layer 102 is exposed.This p type semiconductor layer 104 covers this active layer 103 surfaces.This n type electrode layer 106a covers the part surface of the n type semiconductor layer 102 that exposes, and this p type electrode layer 106b covers the part surface of p type semiconductor layer 104.Thereby on this substrate 101, form a light-emitting diode and three electrostatic defending diodes.
Flip-chip substrate 200 comprises a substrate 201, a metal line layer 203 and salient point soldered ball 204.This substrate 201 is specially the substrate that insulating material with thermal conductive resin is made, and as ceramic substrate etc., so substrate surface need not to cover insulating barrier and realizes insulation.
The difference of present embodiment and embodiment one is: do not form passivation layer between n type semiconductor layer and the p type semiconductor layer, n type electrode layer and p type electrode layer are only realized the insulation isolation by isolation channel 107.Therefore can omit step of manufacturing S4 among the embodiment one.And the substrate 201 of flip-chip substrate 200 adopts insulating material to make, and omitted the manufacturing step that forms insulating barrier at substrate surface.
With respect to prior art, LED device of the present utility model not only has good antistatic effect, can reduce the probability that LED is subjected to environment or circuit electrostatic damage in production flow process and terminal applies life cycle; Can carry out integrated with existing technology easily and can not increase more manufacturing cost; Also can monitor LED reverse leakage situation according to routine, screening falls to have the product of potential problems, improves the reliability of product.
The utility model is not limited to above-mentioned execution mode, if various changes of the present utility model or distortion are not broken away from spirit and scope of the present utility model, if these changes and distortion belong within claim of the present utility model and the equivalent technologies scope, then the utility model also is intended to comprise these changes and distortion.
Claims (7)
1. the LED device with static damage protective function is characterized in that: comprise
Light-emitting diode chip for backlight unit, it comprises a luminous zone and an electrostatic defending district, and wherein, this luminous zone comprises a light-emitting diode, this electrostatic defending district comprises at least two electrostatic defending diodes, and this light-emitting diode and electrostatic defending diode are isolated mutually by isolation channel;
Flip-chip substrate, it comprises the substrate of a surface insulation, and covers the metal line layer on the substrate surface;
This light-emitting diode chip for backlight unit upside-down mounting on this flip-chip substrate, by the metal line layer on this flip-chip substrate, this electrostatic defending diode serial connection then with this light-emitting diode reverse parallel connection.
2. LED device according to claim 1 is characterized in that: this luminous zone area occupied is greater than 50% of this light-emitting diode chip for backlight unit gross area.
3. LED device according to claim 1 is characterized in that: have three electrostatic defending diodes on this light-emitting diode chip for backlight unit.
4. LED device according to claim 1 is characterized in that: the substrate of this flip-chip substrate is that ceramic substrate, surface coverage have the silicon substrate of insulating barrier or the metal substrate that surface coverage has insulating barrier.
5. LED device according to claim 1 is characterized in that: this light-emitting diode and electrostatic defending diode comprise n type semiconductor layer, active layer and p type semiconductor layer; Wherein this n type semiconductor layer covers the substrate surface of this light-emitting diode chip for backlight unit, and this active layer covers the part surface of n type semiconductor layer, and part n type semiconductor layer is exposed, and this p type semiconductor layer covers this active layer surface.
6. LED device according to claim 5, it is characterized in that: this light-emitting diode and electrostatic defending diode further comprise passivation layer and electrode layer, this passivation layer covers the n type semiconductor layer that exposes of part and the surface of p type semiconductor layer, makes mutually insulated between n type semiconductor layer and the p type semiconductor layer; This electrode layer covers n type semiconductor layer and the p N-type semiconductor N laminar surface that exposes between the passivation layer.
7. LED device according to claim 1 is characterized in that: this flip-chip substrate comprises the salient point soldered ball that is arranged on the metal line layer, and this light-emitting diode chip for backlight unit upside-down mounting makes electrode layer be connected with the salient point soldered ball on this flip-chip substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206751957U CN201918389U (en) | 2010-12-22 | 2010-12-22 | LED device with electrostatic damage protection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206751957U CN201918389U (en) | 2010-12-22 | 2010-12-22 | LED device with electrostatic damage protection function |
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| Publication Number | Publication Date |
|---|---|
| CN201918389U true CN201918389U (en) | 2011-08-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206751957U Expired - Lifetime CN201918389U (en) | 2010-12-22 | 2010-12-22 | LED device with electrostatic damage protection function |
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| CN (1) | CN201918389U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618041A (en) * | 2013-12-11 | 2014-03-05 | 江阴长电先进封装有限公司 | ESD (electronic static discharge) protected LED (light-emitting diode) packaging structure as well as packaging method thereof |
| WO2017129697A1 (en) * | 2016-01-29 | 2017-08-03 | Osram Opto Semiconductors Gmbh | Optoelectronic component having side contacts |
| CN108110024A (en) * | 2018-01-16 | 2018-06-01 | 福建兆元光电有限公司 | A kind of semiconductor light-emitting elements |
-
2010
- 2010-12-22 CN CN2010206751957U patent/CN201918389U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618041A (en) * | 2013-12-11 | 2014-03-05 | 江阴长电先进封装有限公司 | ESD (electronic static discharge) protected LED (light-emitting diode) packaging structure as well as packaging method thereof |
| CN103618041B (en) * | 2013-12-11 | 2016-03-30 | 江阴长电先进封装有限公司 | A kind of LED encapsulation structure of esd protection and method for packing thereof |
| WO2017129697A1 (en) * | 2016-01-29 | 2017-08-03 | Osram Opto Semiconductors Gmbh | Optoelectronic component having side contacts |
| US10811579B2 (en) | 2016-01-29 | 2020-10-20 | Osram Oled Gmbh | Optoelectronic component having side contacts |
| CN108110024A (en) * | 2018-01-16 | 2018-06-01 | 福建兆元光电有限公司 | A kind of semiconductor light-emitting elements |
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| C14 | Grant of patent or utility model | ||
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| CP03 | Change of name, title or address |
Address after: 511458 Nansha District, Guangzhou, South Ring Road, No. 33, No. Patentee after: GUANGDONG APT ELECTRONICS LTD. Address before: 511458 software building, Nansha Information Technology Park, Nansha District, Guangdong, Guangzhou 101, China Patentee before: APT (Guangzhou) Electronics Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20110803 |
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| CX01 | Expiry of patent term |