CN108110024A - A kind of semiconductor light-emitting elements - Google Patents
A kind of semiconductor light-emitting elements Download PDFInfo
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- CN108110024A CN108110024A CN201810039395.4A CN201810039395A CN108110024A CN 108110024 A CN108110024 A CN 108110024A CN 201810039395 A CN201810039395 A CN 201810039395A CN 108110024 A CN108110024 A CN 108110024A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000926 separation method Methods 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 4
- 238000003475 lamination Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Led Devices (AREA)
Abstract
The present invention relates to a kind of semiconductor light-emitting elements; including a substrate; it is formed at the light emitting diode of the upper surface of base plate LED area; it is formed at the upper surface of base plate protection diode region and with the protection diode of the light emitting diode reverse parallel connection, the component separation area being arranged between the LED area and the protection diode region；The protection diode region is located at the edge part of the LED area or the central portion of the LED area.A kind of semiconductor light-emitting elements proposed by the present invention; provide it is a kind of be located at same substrate on and the light-emitting component including light emitting diode and protection diode; it realizes light emitting diode and is closed on protection diode and is connected, solve the defects of light-emitting device overall dimensions are bigger than normal.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements.
Background technology
The basic model of light emitting diode includes the active region carried between n-type carrier wave layer and p-type carrier wave layer.Active region
In the case that domain has predetermined thickness and the composition difference of two carrier wave layers, single or multiple quantum wells structure is formed on active region
It makes.Bias bias is when being used, n-type carrier wave layer and p-type carrier wave layer respectively n-type carrier wave and p-type carrier-wave transmission to active region,
N-type carrier wave and p-type carrier wave are compound so as to luminous on active region.
In the prior art, the light that the light emitting diode based on 3 groups of nitride-based semiconductors is sent is similar with natural light, therefore quilt
It is widely used in various electronic equipments, such as LCD backlight, mobile phone.Such 3 groups of nitride semiconductor base plate light emitting diodes
It is very fragile in terms of back voltage ESD.Therefore, protected under normal circumstances with as the protection diode parallel connection Zener diode
Optical diode take care of hair from electrostatic discharge effect.
The size that the traditional approach that light emitting diode is connected with other protection diode can increase light-emitting device entirety is big
It is small.
The content of the invention
It is an object of the invention to provide a kind of semiconductor light-emitting elements, to overcome defect in the prior art.
To achieve the above object, the technical scheme is that：A kind of semiconductor light-emitting elements including a substrate, are formed
In the light emitting diode of the upper surface of base plate LED area, the upper surface of base plate protection diode region is formed at
And with the protection diode of the light emitting diode reverse parallel connection, be arranged at the LED area with it is described protection two poles
Component separation area between the domain of area under control；The protection diode region is located at edge part or the institute of the LED area
State the central portion of LED area.
In an embodiment of the present invention, the edge part of the LED area includes the LED area
Side or the corner of the LED area.
In an embodiment of the present invention, the p-type area of the light emitting diode includes the first n set gradually from the bottom to top
Type semiconductor layer, the first active layer and the first p-type semiconductor layer, n-type region include the first n-type semiconductor layer；First p
The upper surface of type semiconductor layer is provided with the first p-electrode, and the upper surface of the first n-type semiconductor layer of n-type region is provided with the first n
Electrode；
The p-type area of the protection diode include set gradually from the bottom to top the second n-type semiconductor layer, the second active layer with
And second p-type semiconductor layer, n-type region include the second n-type semiconductor layer；The upper surface of second p-type semiconductor layer is set
There is the second p-electrode, the upper surface of the second n-type semiconductor layer of n-type region is provided with the second n-electrode；
First p-electrode is connected through the first connection cable with second n-electrode；First n-electrode is arranged through the second connection
Line is connected with second p-electrode.
In an embodiment of the present invention, first p-electrode include p-pad central electrodes and it is several respectively with the p-
The p-finger expansion electrodes that pad central electrodes are connected；
First n-electrode include n-pad central electrodes and respectively correspond between adjacent p-finger expansion electrodes and
The n-finger expansion electrodes being connected with the n-pad central electrodes.
In an embodiment of the present invention, when the protection diode region is located at the LED area edge part
During corner, first connection cable is connected respectively with second n-electrode and p-finger expansion electrodes, and described second connects
The line that runs in is connected respectively with second p-electrode and the n-pad central electrodes.
In an embodiment of the present invention, the protection diode region is located at the LED area central portion and position
In in the region formed by adjacent p-finger expansion electrodes, p-pad central electrodes and n-finger expansion electrodes.
In an embodiment of the present invention, first connection cable respectively with the p-pad central electrodes and described
Two n-electrodes are connected；Second connection cable is connected respectively with n-finger expansion electrodes and second p-electrode.
In an embodiment of the present invention, between first n-type semiconductor layer and the substrate and second n-type half
Buffer layer is both provided between conductor layer and the substrate.
In an embodiment of the present invention, first connection cable and light emitting diode side, upper surface of base plate and guarantor
Shield diode is provided with insulating layer between side；Second connection cable and light emitting diode side, upper surface of base plate and
Protection diode is provided with insulating layer between side.
In an embodiment of the present invention, the upper surface of first p-type semiconductor layer is additionally provided with transparent electrode layer.
Compared to the prior art, the invention has the advantages that：A kind of semiconductor light-emitting elements proposed by the present invention,
Provide it is a kind of be located at same substrate on and the light-emitting component including light emitting diode and protection diode, realize luminous two
Pole pipe is closed on protection diode to be connected, and solves the defects of light-emitting device overall dimensions are bigger than normal.
Description of the drawings
Fig. 1 is the schematic plan view of semiconductor light-emitting elements in the embodiment of the present invention one.
Fig. 2 is A-A ' the line sectional views of Fig. 1 in the embodiment of the present invention one.
Fig. 3 is B-B ' the line sectional views of Fig. 1 in the embodiment of the present invention one.
Fig. 4 is semiconductor light-emitting elements equivalent circuit diagram in the present invention.
Fig. 5 is semiconductor element schematic plan view in the embodiment of the present invention two.
Fig. 6 is C-C ' the line sectional views of Fig. 5 in the embodiment of the present invention two.
Fig. 7 is D-D ' the line sectional views of Fig. 5 in the embodiment of the present invention two.
Fig. 8 is semiconductor light-emitting elements schematic plan view in the embodiment of the present invention three.
Fig. 9 is E-E ' the line sectional views of Fig. 8 in the embodiment of the present invention three.
Specific embodiment
Below in conjunction with the accompanying drawings, technical scheme is specifically described.
Semiconductor light-emitting elements provided by the invention include a light emitting diode and one is used in reverse ESD voltage
Protect the ESD protection diodes of light emitting diode.As shown in figure 4, for semiconductor light-emitting elements equivalent circuit diagram of the present invention, with
It is commonly used in lower embodiment.Light emitting diode and protection diode negative direction and company, when a forward voltage is applied to hair
When on the electrode of optical diode, a forward current is by light emitting diode so as to fulfill normal light-emission operation.In contrast,
When a backward voltage, when being applied to such as ESD (electrostatic discharge) voltage on light emitting diode, protection
Diode is opened, and most of electric current is by protection diode, so as to protect light emitting diode.
Semiconductor light-emitting elements provided by the invention, light emitting diode and ESD protection diodes on the same substrate, and root
It is placed according to component separation area, and correspondence is formed in LED area and protection diode region respectively, and then provide
A kind of small semiconductor light-emitting component with electrostatic protection function.In the present invention, protection diode region can be placed in
The side or corner of marginal portion, i.e. LED area or the central part surrounded by LED area.And pass through
The p-type electrode of first connection cable connecting luminous diode and the n-type electrode of protection diode are connected by the second connection cable
The n-type electrode of light emitting diode and the p-type electrode of protection diode.It, can be by first by said structure and connection mode
The length of the length of connection cable and the second connection cable minimizes.
In order to which those skilled in the art is allowed to further appreciate that technical solution proposed by the invention, with reference to specific implementation
Example illustrates.
Embodiment one
Fig. 1 is the schematic plan view of semiconductor light-emitting elements.Fig. 2 is the sectional view according to A-A ' lines in Fig. 1.Fig. 3 is according to Fig. 1
The sectional view of middle B-B ' lines.As reference, in order to be better understood from shown sectional view, the section parts back side of incision is omitted
Element on position.
In the present embodiment, as shown in Figure 1, Figure 2 and Figure 3, semiconductor light-emitting elements (10) include substrate (11), in substrate
(11) light emitting diode (100) formed in the LED area (L) on and the foundation element separation on substrate (11)
The ESD protection diodes (200) formed in the protection diode region (Z) separated with LED area (L) of region (S).
In the present embodiment, ESD protection diodes (200) and light emitting diode (100) reverse parallel connection.For above-mentioned company
It connects, as first p-electrode (17) of light emitting diode (100) p-type electrode and as ESD protection diodes (200) n-type electrode
Second electrode (28) is electrically connected by the first connection cable (110), and as light emitting diode (100) n-type electrode
One n-electrode (18) and the second p-electrode (27) as ESD protection diodes (200) p-type electrode are electrically connected by the second connection cable
It is connected together.
In the present embodiment, LED area (L) and protection diode region (Z) are by being located on substrate (11)
What the rill slot type component separation area (S) on surface was separated.
In the present embodiment, protection diode region (Z) is arranged at the side of LED area (L), can be at one
The first connection cable of connection (100) and the second connection cable (210) in short distance.
In the present embodiment, substrate (11) can use sapphire, SiC, GaN etc., but be not restricted to more than different materials, may
The substance of growing nitride semiconductor is prepared available for substrate (11).To prevent the crystalline substance of the semiconductor layer formed on substrate (11)
Lattice defect can form a buffer layer (12) in the upper surface of substrate (11).
In the present embodiment, light emitting diode (100) include positioned at substrate (11) buffer layer (12) upper surface and by by
Under supreme order lamination the first n-type semiconductor layer (13), the first active layer (14) and the first p-type semiconductor layer (15).Hair
Optical diode (100) further includes the transparent electrode layer being arranged between the first p-type semiconductor layer (15) and the first p-electrode (17)
(16), and it can be used ITO.Light emitting diode (100) further includes a mesa structure, the first n at the etching position of mesa structures
The upper surface of type semiconductor layer (13) is provided with the first n-electrode (18).
In the present embodiment, ESD protection diodes (200) are included on the buffer layer (12) of substrate (11) and by under
The second n-type semiconductor layer (23), the second active layer (24), the second p-type semiconductor layer (25) and the 2nd p of supreme order lamination
Electrode (27).ESD protection diodes (200) further include a mesa structure, and second n-type at the etching position of mesa structures is partly led
The upper surface of body layer (23) is provided with the second n-electrode (28).
In the present embodiment, the first connection cable (110) electrical connection light emitting diode (100) the first p-electrode (17) with
The second n-electrode (28) of ESD protection diodes (200).Second connection cable (210) electrical connection light emitting diode (100) is all
1n electrodes (18) and the second p-electrode (27) of ESD protection diodes (200).
In the present embodiment, in order to ensure the first connection cable (110), the second connection cable (210), light emitting diode
(100) or the insulation of ESD protection diodes (200) ingredient, it is also provided with insulating layer (130).
Embodiment two
Fig. 5 is semiconductor element schematic plan view in the present embodiment.Fig. 6 is the sectional view according to C-C ' lines in Fig. 5.Fig. 7 is root
According to the sectional view of D-D ' lines in Fig. 5.In the present embodiment, protection diode region (Z) is arranged at LED area (L)
Corner.
In the present embodiment, light emitting diode (300) include positioned at substrate (31) buffer layer (32) on and by by down toward
The first n-type semiconductor layer (33), the first active layer (34) and the first p-type semiconductor layer (35) of upper order lamination.First p-type
Semiconductor layer (35) upper surface is provided with transparent electrode layer (36), using ITO.Transparent electrode layer（36）Upper surface is provided with first
P-electrode (37).First n-type semiconductor layer (33) upper surface is provided with the first n-electrode (38).
In the present embodiment, ESD protection diodes (400) include positioned at substrate (31) buffer layer (32) on press by down toward
The second n-type semiconductor layer (43), the second active layer (44) and the second p-type semiconductor layer (45) of upper order lamination.Second p-type
Semiconductor layer (45) upper surface is provided with the second p-electrode (47).Second n-type semiconductor layer (43) upper surface is provided with the 2nd n electricity
Pole (48)
In the present embodiment, the first p-electrode (37) of light emitting diode (300) includes p-pad central electrodes (371) and connection
Multiple p-finger expansion electrodes (372) on p-pad central electrodes (371).First electrode (38) includes electrocardio in n-pad
At least one n-finger expansion electrodes (382) connected on pole (381) and n-pad central electrodes (381), n-finger expand
Electrode (382) is opened up between multiple p-finger expansion electrodes (372).
In the present embodiment, in the case of the interference of protection diode region (Z) from finger, light emitting diode
(300) and the electrode of ESD protection diodes (400) is placed on the position for being capable of the interior connection of short distance, therefore can be by protection diode
Region (Z) is arranged at the corner of LED area (L).LED area (L) and protection diode region (Z) pass through
The component separation area (S) of the groove of one narrow width is separately positioned.
In the present embodiment, it is placed on the 2nd p electricity of the ESD protection diodes (400) in LED area (L) corner
Pole (47) and the second n-electrode (48) are connected respectively with the first n-electrode of light emitting diode (300) (38) and the first p-electrode (37).
Second p-electrode (47) is connected by the n-pad central electrodes (381) of the second connection cable (410) and the first n-electrode (38) closed on
It connects.Second n-electrode (48) passes through the first connection cable (310) and the p-finger expansion electrodes for closing on the first p-electrode (37)
(372) connect respectively.In the present embodiment, in order to avoid the first connection cable and the second connection cable (410) and diode
The side contact of structure, is also provided with insulating layer (330).
Embodiment three
Fig. 8 is semiconductor light-emitting elements (50) schematic plan view in the present embodiment.Fig. 9 is the section of the E-E ' lines in Fig. 8
Figure.
In the present embodiment, semiconductor light-emitting elements (50) include the LED area (L) placed on substrate (31)
With LED area (Z).LED area (L) surrounds protection diode region (Z).Substrate is extended to by one
(31) component separation area (S) of the narrow groove form of upper surface, by LED area L from the Z of protection diode region
It separates.
In the present embodiment, as shown in figure 8, the p-type electrode and n-type of the light emitting diode (500) of semiconductor light-emitting elements
Electrode, it is identical with embodiment two, it is corresponding to include pad and finger.The n-finger expansion electrodes of n-type electrode are arranged on p-type
Between the p-finger expansion electrodes of electrode.This electrode modes of emplacement used in the present embodiment can ensure to protect
Diode area (Z) is not in the case where being subject to electrode finger to disturb so that is placed on the p-type of light emitting diode (500)
Electrode and n-type electrode can be realized with the p-type electrode and n-type electrode of ESD protection diodes (600) in short distance to be connected.
In the present embodiment, light emitting diode (500) include positioned at substrate (51) buffer layer (52) upper surface and by by
Under supreme order lamination the first n-type semiconductor layer (53), the first active layer (54) and the first p-type semiconductor layer (55).The
One p-type semiconductor layer (55) upper surface is provided with transparent electrode layer (56), and using ITO.The upper surface of transparent electrode layer (56)
The first p-electrode (57) is provided with, the first n-electrode (58) is placed in the first n-type semiconductor layer (53).
In the present embodiment, EDS protection diodes (600) are included positioned at the buffer layer upper surface of substrate (51) and by under
The second n-type semiconductor layer (63), the second active layer (64) and the second p-type semiconductor layer (65) of supreme order lamination.2nd p
Type semiconductor layer (65) upper surface is provided with the second p-electrode (67).Second n-type semiconductor layer (63) upper surface is provided with the 2nd n
Electrode (68).
In the present embodiment, the first p-electrode (57) of light emitting diode (500) include p-pad central electrodes (571) and
The multiple p-finger expansion electrodes (572) being connected with p-pad central electrodes (571).First n-electrode (58) is included in n-pad
Heart electrode (581) and at least one n-finger expansion electrodes (582) being connected with n-pad central electrodes (581), n-
Finger expansion electrodes (582) are between multiple p-finger expansion electrodes (572).
In the present embodiment, the ESD protection diodes (600) placed on the central part of LED area (L)
Second p-electrode (67) and the second n-electrode (68) respectively with the first n-electrode of light emitting diode (500) (58) and the first p-electrode
(57) connect.Second p-electrode (67) is expanded by the n-finger of the second connection cable (610) and neighbouring the first n-electrode (58)
Electrode (582) is opened up to be connected.The p-pad centers that second n-electrode (68) passes through the first connection cable (510) and the first p-electrode (57)
Electrode (571) is connected.
It in the present embodiment, can be in the first connection cable (510) or the second connection cable (610) and diode configuration object
Insulating layer (530) is set in the case of side is discontiguous.
The above are preferred embodiments of the present invention, all any changes made according to the technical solution of the present invention, and generated function is made
During with scope without departing from technical solution of the present invention, all belong to the scope of protection of the present invention.
Claims (10)
1. a kind of semiconductor light-emitting elements, which is characterized in that including a substrate, be formed at the upper surface of base plate light emitting diode
The light emitting diode in region, be formed at the upper surface of base plate protection diode region and with the light emitting diode reverse parallel connection
Protection diode, the component separation area being arranged between the LED area and the protection diode region；
The protection diode region is located at the edge part of the LED area or the central portion of the LED area.
A kind of 2. semiconductor light-emitting elements according to claim 1, which is characterized in that the side of the LED area
Edge includes the side of the LED area or the corner of the LED area.
A kind of 3. semiconductor light-emitting elements according to claim 1, which is characterized in that the p-type area of the light emitting diode
Domain includes the first n-type semiconductor layer, the first active layer and the first p-type semiconductor layer that set gradually from the bottom to top, n-type region
Including the first n-type semiconductor layer；The upper surface of first p-type semiconductor layer is provided with the first p-electrode, the first n of n-type region
The upper surface of type semiconductor layer is provided with the first n-electrode；
The p-type area of the protection diode include set gradually from the bottom to top the second n-type semiconductor layer, the second active layer with
And second p-type semiconductor layer, n-type region include the second n-type semiconductor layer；The upper surface of second p-type semiconductor layer is set
There is the second p-electrode, the upper surface of the second n-type semiconductor layer of n-type region is provided with the second n-electrode；
First p-electrode is connected through the first connection cable with second n-electrode；First n-electrode is arranged through the second connection
Line is connected with second p-electrode.
4. a kind of semiconductor light-emitting elements according to claim 3, which is characterized in that first p-electrode includes p-pad
Central electrode and several p-finger expansion electrodes being connected respectively with the p-pad central electrodes；
First n-electrode include n-pad central electrodes and respectively correspond between adjacent p-finger expansion electrodes and
The n-finger expansion electrodes being connected with the n-pad central electrodes.
5. a kind of semiconductor light-emitting elements according to claim 4, which is characterized in that when protection diode region position
When the corner of the LED area edge part, first connection cable respectively with second n-electrode and p-
Finger expansion electrodes are connected, second connection cable respectively with second p-electrode and the n-pad central electrodes phase
Even.
6. a kind of semiconductor light-emitting elements according to claim 4, which is characterized in that the protection diode region is located at
The LED area central portion and positioned at by adjacent p-finger expansion electrodes, p-pad central electrodes and n-
In the region that finger expansion electrodes are formed.
7. a kind of semiconductor light-emitting elements according to claim 6, which is characterized in that first connection cable respectively with
The p-pad central electrodes and second n-electrode are connected；Second connection cable respectively with n-finger expansion electrodes
And second p-electrode is connected.
8. a kind of semiconductor light-emitting elements according to claim 3, which is characterized in that first n-type semiconductor layer with
Buffer layer is both provided between the substrate and between second n-type semiconductor layer and the substrate.
9. a kind of semiconductor light-emitting elements according to claim 3, which is characterized in that first connection cable is with shining
Insulating layer is provided between diode side, upper surface of base plate and protection diode side；Second connection cable and hair
Insulating layer is provided between optical diode side, upper surface of base plate and protection diode side.
10. a kind of semiconductor light-emitting elements according to claim 3, which is characterized in that first p-type semiconductor layer
Upper surface is additionally provided with transparent electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810039395.4A CN108110024A (en) | 2018-01-16 | 2018-01-16 | A kind of semiconductor light-emitting elements |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810039395.4A CN108110024A (en) | 2018-01-16 | 2018-01-16 | A kind of semiconductor light-emitting elements |
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Application publication date: 20180601 |