TWI515924B - Light-emitting component and package structure thereof - Google Patents

Description

Light-emitting element and its package structure

The present invention relates to a light-emitting element and a package structure thereof, and more particularly to a light-emitting element having an electrostatic discharge (ESD protection) function and a package structure thereof.

The light-emitting diode has advantages such as long life, small volume, high shock resistance, low heat generation, and low power consumption, and thus has been widely used as an indicator or a light source in households and various devices. In recent years, light-emitting diodes have developed toward high power, so their applications have expanded to road lighting, large outdoor billboards, traffic lights and related fields. In the future, light-emitting diodes may even become the main source of illumination for both power saving and environmental protection functions.

Although the light-emitting diode has many of the above advantages, it is often damaged by an abnormal voltage or an electrostatic discharge (ESD). In a conventional method, in order to prevent the light-emitting diode from being damaged due to abnormal voltage or electrostatic discharge, the light-emitting diode and the Zener diode are simultaneously disposed on the same substrate, and the light-emitting diode and the light-emitting diode are The Zener diode is directly connected to the opposite phase through the electrode to avoid the light-emitting diode The body is damaged by abnormal voltage or electrostatic discharge.

However, the connection between the general light-emitting diode and the Zener diode is by external metal wiring. However, such an external circuit is likely to cause an open circuit because the connection between the metal wiring and the diode electrode is not strong. Furthermore, the Zener diode cannot function as its voltage regulator; in addition, since the light-emitting diode is connected to the Zener diode, it is necessary to reserve a connection space, and in the current trend of integration, the prior art The arrangement of the middle light-emitting diode and the Zener diode will not be able to effectively utilize the module space, and even sacrifice the light-emitting efficiency of the light-emitting module. Therefore, how to balance the light-emitting efficiency and the static electricity protection is a subject worth considering.

The invention provides a light-emitting element and a package structure thereof, which have the function of ESD protection.

The illuminating device of the present invention comprises a substrate, a semiconductor structure layer, a first electrode, a second electrode, a third electrode and a connecting layer. The substrate has an upper surface. The semiconductor structure layer is disposed on the upper surface of the substrate and is divided into a first semiconductor structure layer and a second semiconductor structure layer. The first semiconductor structure layer and the second semiconductor structure layer are isolated from each other and expose a portion of the upper surface. The first semiconductor structure layer and the second semiconductor structure layer respectively have a first type semiconductor layer disposed on the upper surface, a second type semiconductor layer, and a first type semiconductor layer and a second type semiconductor layer disposed between the first type semiconductor layer and the second type semiconductor layer. Light-emitting layer. The first electrode is connected to the second type semiconductor layer of the first semiconductor structure layer. The second electrode is connected to the first type semiconductor layer of the second semiconductor structure layer, The first electrode and the second electrode are isolated from each other and have a spacing. The third electrode is connected to the first type semiconductor layer of the first semiconductor structure layer. The connection layer connects the first type semiconductor layer of the first semiconductor structure layer and the second type semiconductor layer of the second semiconductor structure layer, and has a spacing between the connection layer and the third electrode. The first electrode, the third electrode and the first semiconductor structure layer define a first light emitting diode. The second electrode and the second semiconductor structure layer define a second light emitting diode.

In an embodiment of the invention, the thickness of the first semiconductor structure layer is the same as the thickness of the second semiconductor structure layer.

In an embodiment of the invention, the ratio of the orthographic projection area of the first semiconductor structure layer to the orthographic projection area of the second semiconductor structure layer is between 10 and 10,000.

In an embodiment of the invention, the ratio of the orthographic projection area of the first semiconductor structure layer to the orthographic projection area of the second semiconductor structure layer is between 100 and 1000.

In an embodiment of the invention, a first surface of the first electrode, a second surface of the second electrode, and a third surface of the third electrode are substantially flush.

In an embodiment of the invention, the first semiconductor layer of the first semiconductor structure layer has a flat portion and a protruding portion on the flat portion. The light emitting layer of the first semiconductor structure layer and the second type semiconductor layer are located on the protrusions. The third electrode and the connection layer are respectively connected to the flat plate portion.

In an embodiment of the invention, the light emitting device further includes an insulating layer disposed on the exposed portion of the first semiconductor structure layer and the second semiconductor structure layer And covering at least one side surface of the first semiconductor structure layer and the second semiconductor structure layer, and a portion of the insulating layer is located between the connection layer and the upper surface.

In an embodiment of the invention, the material of the insulating layer comprises ruthenium oxide or tantalum nitride.

In an embodiment of the invention, the light-emitting element further includes an electrical insulating layer disposed on the connection layer between the first electrode and the connection layer and between the second electrode and the connection layer.

In an embodiment of the invention, the first type semiconductor layer is an N type semiconductor layer, and the second type semiconductor layer is a P type semiconductor layer.

In an embodiment of the invention, the light-emitting element further includes a pad upper layer disposed between the third electrode and the first type semiconductor layer of the first semiconductor structure layer, and the second electrode and the second semiconductor structure layer Between the one type of semiconductor layers and between the connection layer and the first type semiconductor layer of the first semiconductor structure layer.

In an embodiment of the invention, the light-emitting element further includes a conductive structure layer disposed on the second type semiconductor layer of the first semiconductor structure layer and the second type semiconductor layer of the second semiconductor structure layer.

In an embodiment of the invention, the conductive structure layer comprises a reflective layer and a transparent conductive layer, wherein the reflective layer covers the transparent conductive layer.

In an embodiment of the invention, the material of the reflective layer comprises aluminum, silver, gold or an alloy thereof.

In an embodiment of the invention, the maximum width of a first surface of the first electrode is slightly equal to the maximum width of a third surface of the third electrode, and the first table The ratio of the area of the face to the area of the third surface is between 0.9 and 1.

A light-emitting element package structure of the present invention includes a carrier and the above-described light-emitting element. The carrier has a bearing surface, a first pad and a second pad, wherein the first pad and the second pad are separated from each other and are located on the bearing surface. The third electrode is connected to the first pad, and the first electrode and the second electrode are connected to the second pad.

In an embodiment of the invention, the first pad and the third electrode are eutectic bonded, and the second pad is eutectic bonded to the first electrode and the second electrode.

Based on the above, the light-emitting element of the present invention has the design of the second light-emitting diode, so that the first light-emitting diode can be prevented from being damaged by electrostatic discharge, and the service life of the first light-emitting diode can be prolonged. Therefore, the light emitting element package structure using the light emitting element can have a better ESD protection function. In addition, the light-emitting element of the present invention can simultaneously manufacture the first light-emitting diode and the second light-emitting diode with voltage stabilization function by the same epitaxial method, which not only reduces the process cost, but also increases the unit area that can be placed during packaging. The number of wafers. Furthermore, the buried connection layer of the present invention can prevent the external metal connection from being broken by the external force and cause the component to fail due to the conventional connection of the individual electrodes by metal wiring, thereby preventing the second illumination. The situation in which the polar body cannot protect the first light-emitting diode occurs.

The above described features and advantages of the invention will be apparent from the following description.

100a, 100b‧‧‧Lighting elements

110‧‧‧Substrate

112‧‧‧ upper surface

120‧‧‧Semiconductor structural layer

120a‧‧‧First semiconductor structural layer

120b‧‧‧Second semiconductor structural layer

122‧‧‧First type semiconductor layer

122a, 122a’‧‧‧ Flat section

122b, 122b’‧‧‧ highlights

124‧‧‧Lighting layer

126‧‧‧Second type semiconductor layer

132‧‧‧First electrode

132a‧‧‧ first surface

134‧‧‧second electrode

134a‧‧‧ second surface

136‧‧‧ third electrode

136a‧‧‧ third surface

140‧‧‧Connection layer

150‧‧‧Insulation

160‧‧‧Electrical insulation

170‧‧‧ high-rise

180, 180'‧‧‧ conductive structural layer

200‧‧‧Lighting element package structure

210‧‧‧ Carrier

212‧‧‧ bearing surface

222‧‧‧first mat

224‧‧‧second mat

D1‧‧‧First Light Emitting Diode

D2‧‧‧Second light-emitting diode

W, W’‧‧‧Maximum width

FIG. 1A is a cross-sectional view of a light emitting device according to an embodiment of the invention.

FIG. 1B is a cross-sectional view of a light emitting device according to another embodiment of the present invention.

2 is a cross-sectional view showing a light emitting device package structure according to an embodiment of the invention.

3 is a top plan view of a light emitting device according to an embodiment of the invention.

FIG. 1A is a cross-sectional view of a light emitting device according to an embodiment of the invention. Referring to FIG. 1A , in the embodiment, the light emitting device 100 a includes a substrate 110 , a semiconductor structure layer 120 , a first electrode 132 , a second electrode 134 , a third electrode 136 , and a connection layer 140 . The substrate 110 has an upper surface 112. The semiconductor structure layer 120 is disposed on the upper surface 112 of the substrate 110 and is divided into a first semiconductor structure layer 120a and a second semiconductor structure layer 120b. The first semiconductor structure layer 120a and the second semiconductor structure layer 120b are isolated from each other and expose a portion of the upper surface 112 of the substrate 110. The first semiconductor structure layer 120a and the second semiconductor structure layer 120b respectively have a first type semiconductor layer 122 disposed on the upper surface 112, a second type semiconductor layer 126, and a first type semiconductor layer 122 and a second layer. Light-emitting layer 124 between the semiconductor layers 126.

As shown in FIG. 1A, the first electrode 132 of the present embodiment is connected to the second type semiconductor layer 126 of the first semiconductor structure layer 120a, wherein the first electrode 132 is electrically connected to the second type semiconductor layer 126 of the first semiconductor structure layer 120a. . The second electrode 134 is connected to the first type semiconductor layer 122 of the second semiconductor structure layer 120b, wherein the second electrode 134 is electrically connected to the first type semiconductor layer 122 of the second semiconductor structure layer 120b, and the first electrode 132 and the second electrode The 134 are isolated from each other and have a spacing. The third electrode 136 is connected to the first type semiconductor layer 122 of the first semiconductor structure layer 120a, wherein the third electrode 136 is electrically connected to the first type semiconductor layer 122 of the first semiconductor structure layer 120a. The connection layer 140 connects the first type semiconductor layer 122 of the first semiconductor structure layer 120a and the second type semiconductor layer 126 of the second semiconductor structure layer 120b, wherein the connection layer 140 is electrically connected to the first type semiconductor of the first semiconductor structure layer 120a. The layer 122 and the second type semiconductor layer 126 of the second semiconductor structure layer 120b have a spacing between the connection layer 140 and the third electrode 136. The first electrode 132, the third electrode 136 and the first semiconductor structure layer 120a define a first light-emitting diode D1. The second electrode 134 and the second semiconductor structure layer 120b define a second LED D2. Here, the first type semiconductor layer 122 is, for example, an N type semiconductor layer, and the second type semiconductor layer 126 is, for example, a P type semiconductor layer. At this time, the second electrode 134 and the third electrode 136 will be the N electrode, and the first electrode 132 will be the P electrode. Of course, the first type semiconductor layer 122 may be a P-type semiconductor layer according to the process, and the second The semiconductor layer 126 is an N-type semiconductor layer. Thus, the corresponding second electrode 134 and third electrode 136 will be P electrodes, and the first electrode 132 will be N electrodes. a first surface 132a of the first electrode 132, a second surface 134a of the second electrode 134, and a third electrode 136 A third surface 136a is substantially flush.

In detail, the thickness of the first semiconductor structure layer 120a of the present embodiment is substantially the same as the thickness of the second semiconductor structure layer 120b. The first type semiconductor layer 122 of the first semiconductor structure layer 120a has a flat plate portion 122a and a protruding portion 122b on the flat plate portion 122a. The light emitting layer 124 of the first semiconductor structure layer 120a and the second type semiconductor layer 126 are located on the protruding portion 122b, and the third electrode 136 and the connecting layer 140 are electrically connected to the flat plate portion 122a, respectively. On the other hand, the first type semiconductor layer 122 of the second semiconductor structure layer 120b has a flat plate portion 122a' and a projection portion 122b' on the flat plate portion 122a'. The light emitting layer 124 of the second semiconductor structure layer 120b and the second type semiconductor layer 126 are located on the protruding portion 122b', and the second electrode 134 is electrically connected to the flat plate portion 122a'. Here, the orthographic projection area of the first semiconductor structure layer 120a on the upper surface 112 is greater than the orthographic projection area of the second semiconductor structure layer 120b on the upper surface 112. Preferably, the ratio of the orthographic projection area of the first semiconductor structure layer 120a to the orthographic projection area of the second semiconductor structure layer 120b is between 10 and 10,000, and optimally between 100 and 1000. In this way, the first semiconductor structure layer 120a and the second semiconductor structure layer 120b can be simultaneously fabricated by the same epitaxial process, and because the area ratio of the second semiconductor structure layer 120b and the first semiconductor structure layer 120b are greatly different, It can achieve the effect of not affecting the light extraction efficiency and electrostatic protection at the same time.

More specifically, the light-emitting element 100a of the present embodiment further includes an insulating layer 150 disposed on the upper surface 112 exposed by the first semiconductor structure layer 120a and the second semiconductor structure layer 120b, and extending at least to cover the first semiconductor Structural layer 120a And a side surface of the second semiconductor structure layer 120b. As shown in FIG. 1A, the insulating layer 150 fills the gap between the first semiconductor structure layer 120a and the second semiconductor structure layer 120b and extends to the flat portion 122a of the first type semiconductor layer 122 of the first semiconductor structure layer 120a. And a portion of the insulating layer 150 is located between the connection layer 140 and the upper surface 112. The insulating layer 150 may be disposed on the portion of the second type semiconductor layer 126 and extend downwardly to cover the side surfaces of the second type semiconductor layer 126, the light emitting layer 124, and the protruding portion 122b (122b') of the first type semiconductor layer 122. Preferably, the insulating layer 150 also covers the partial flat portion 122a (122a') of the first type semiconductor layer 122 of the first semiconductor structure layer 120a, which may have better insulation effect. Here, the material of the insulating layer 150 is, for example, tantalum oxide or tantalum nitride, so that contact between the electrodes can be avoided to cause the electron holes to fail to bond in the semiconductor structure layer 120, thereby causing the components to fail.

In addition, the light-emitting element 100a of the present embodiment further includes an electrically insulating layer 160 disposed on the connection layer 140 between the first electrode 132 and the connection layer 140 and between the second electrode 134 and the connection layer 140. It can prevent short circuit between electrodes due to contact. In addition, the light emitting device 100a of the embodiment further includes a pad high layer 170 and a conductive structure layer 180. The pad high layer 170 is disposed between the third electrode 136 and the flat portion 122a of the first type semiconductor layer 122 of the first semiconductor structure layer 120a, and the second electrode 134 and the first semiconductor layer 122 of the second semiconductor structure layer 120b Between the portions 122a' and between the connection layer 140 and the flat portion 122a of the first type semiconductor layer 122 of the first semiconductor structure layer 120a. The conductive structure layer 180 is disposed on the second type semiconductor layer 126 of the first semiconductor structure layer 120a and the second type semiconductor layer 126 of the second semiconductor structure layer 120b, wherein the insulating layer 150 extends to cover the portion On the conductive structure layer 180, the first electrode 132 and the connection layer 140 are connected to the conductive structure layer 180. The second type semiconductor layer 126 can form a good ohmic contact with the first electrode 132 by the conductive structure layer 180. Here, the conductive structure layer 180 is, for example, a transparent conductive layer or a reflective layer, wherein the transparent conductive layer is made of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), Zinc oxide (ZnO), indium tin zinc oxide (ITZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO) or other suitable The transparent conductive material, and the material of the reflective layer is, for example, aluminum (Al), silver (Ag), gold (Au) or an alloy thereof.

It should be noted that, in other embodiments, referring to FIG. 1B , the conductive structure layer 180 ′ of the light-emitting element 100 b of the present embodiment includes a transparent conductive layer 182 and a reflective layer 184 , wherein the reflective layer 184 covers the transparent conductive layer 182 . . Here, the material of the reflective layer is, for example, aluminum (Al), silver (Ag), gold (Au) or an alloy thereof, and the material of the transparent conductive layer 182 is, for example, indium tin oxide (ITO) or indium zinc. Indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), aluminum tin oxide (ATO), aluminum zinc oxide ( Aluminum zinc oxide, AZO) or other suitable transparent conductive material. When the conductive structure layer 180 is a reflective layer or the conductive structure layer 180 ′ includes the reflective layer 184 and the transparent conductive layer 182 , the conductive structure layer 180 , 180 ′ can reflect the light emitted by the light emitting layer 124 , so that the semiconductor structure layer 120 A flip-chip light-emitting element; when the conductive structure layer 180 only includes a transparent conductive layer, the light is emitted outward through the conductive structure layer 180, so that the conductive junction of this form is suitable The layer 180 is applied to a horizontal light-emitting element.

The design of the light-emitting element 100a of the present embodiment is that the first electrode 132 and the second electrode 134 are isolated from each other, wherein the first electrode 132 is electrically connected to the second-type semiconductor layer 126 of the first semiconductor structure layer 120a, and the second electrode 134 is electrically connected. The first type semiconductor layer 122 of the second semiconductor structure layer 120b is electrically connected. The connection between the first light-emitting diode D1 and the second light-emitting diode D2 by the internal connection layer 140 prevents the line from being broken by an external force, and is disposed on the first-type semiconductor layer 122 of the first semiconductor structure layer 120a. The third electrode 136 is isolated from the connection layer 140, so that the light-emitting element 100a can be easily connected to a carrier (not shown) when packaged. The first electrode 132 and the second electrode 134 are flush with the third electrode 136, and the flatness of the light emitting element 100a can be maintained when packaged with the carrier.

2 is a cross-sectional view showing a light emitting device package structure according to an embodiment of the invention. Referring to FIG. 2, in the embodiment, the light emitting element package structure 200 includes a carrier 210 and the light emitting element 100a of FIG. 1A. The carrier 210 has a bearing surface 212 , a first pad 222 and a second pad 224 . The first pad 222 and the second pad 224 are separated from each other and located on the bearing surface 212 . The third electrode 136 of the light-emitting element 100a is electrically connected to the first pad 222, and the first electrode 132 of the light-emitting element 100a is electrically connected to the second electrode 134 and electrically connected to the second pad 224. Here, the first pad 222 and the third electrode 136 are eutectic bonded, and the second pad 224 is eutectic bonded to the first electrode 132 and the second electrode 134.

3 is a top plan view of a light-emitting element according to an embodiment of the present invention, and it should be noted that the cross-section along line A-A' of FIG. 3 is the light-emitting element of FIG. 1A. Schematic diagram of the piece. In detail, referring to FIG. 1 and FIG. 3 simultaneously, the maximum width W of the first surface 132a of the first electrode 132 is slightly equal to the maximum width W' of the third surface 136a of the third electrode 136, and the first surface 132a The ratio of the area to the area of the third surface 136a is between 0.9 and 1. As a result, the electrodes having similar surface areas can increase the assembly convenience with the carrier, and the difference between the conventional electrode and the electrode is too large to cause solidification. Crystal or reflow assembly yields problems with poor yield or uneven surface.

Since the light-emitting element 100a of the present embodiment has the design of the second light-emitting diode D2, when the light-emitting element 100a is transmitted through the second pad 224 of the carrier 210 to electrically connect the first electrode 132 and the second electrode 134, The two-light-emitting diode D2 can prevent the first light-emitting diode D1 from being damaged by electrostatic discharge, and can extend the service life of the first light-emitting diode D1. Therefore, the light emitting element package structure 200 of the present embodiment has a function of ESD protection. In addition, since the first surface 132a of the first electrode 132, the second surface 134a of the second electrode 134, and the third surface 136a of the third electrode 136 are substantially flush, when the first electrode 132, the second electrode 134 and the first The two pads 224 are eutectic bonded, and when the third electrode 134 is eutectic bonded to the first pads 222, in addition to having better flatness, it also has better bonding strength.

In summary, since the light-emitting element of the present invention is designed such that the first electrode and the second electrode are isolated from each other, wherein the first electrode is connected to the second-type semiconductor layer of the first semiconductor structure layer, and the second electrode is connected to the second semiconductor structure a first type semiconductor layer of the layer, the first type semiconductor layer of the first semiconductor structure layer and the second type semiconductor layer of the second semiconductor structure layer are connected by a buried connection layer, so that the connection between the electrodes can be It is not easily damaged by external forces. Furthermore, by supplying the same voltage to the first electrode and the second electrode separated by the second pad on the carrier, the current can be uniformly transmitted to the first electrode and the second electrode, and the second light emitting diode is shortened. The reaction time for the body to initiate electrostatic protection. In addition, since the light-emitting element of the present invention has the design of the second light-emitting diode, the first light-emitting diode can be prevented from being subjected to electrostatic discharge damage, and the service life of the first light-emitting diode can be prolonged. Therefore, the light emitting element package structure using the light emitting element can have a better ESD protection function.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100a‧‧‧Lighting elements

110‧‧‧Substrate

112‧‧‧ upper surface

120‧‧‧Semiconductor structural layer

120a‧‧‧First semiconductor structural layer

120b‧‧‧Second semiconductor structural layer

122‧‧‧First type semiconductor layer

122a, 122a’‧‧‧ Flat section

122b, 122b’‧‧‧ highlights

124‧‧‧Lighting layer

126‧‧‧Second type semiconductor layer

132‧‧‧First electrode

132a‧‧‧ first surface

134‧‧‧second electrode

134a‧‧‧ second surface

136‧‧‧ third electrode

136a‧‧‧ third surface

140‧‧‧Connection layer

150‧‧‧Insulation

160‧‧‧Electrical insulation

170‧‧‧ high-rise

180‧‧‧Electrical structural layer

D1‧‧‧First Light Emitting Diode

D2‧‧‧Second light-emitting diode

Claims (17)

A light-emitting element comprising: a substrate having an upper surface; a semiconductor structure layer disposed on the upper surface of the substrate and divided into a first semiconductor structure layer and a second semiconductor structure layer, the first semiconductor structure The layer is separated from the second semiconductor structure layer and exposes a portion of the upper surface, wherein the first semiconductor structure layer and the second semiconductor structure layer respectively have a first type semiconductor layer disposed on the upper surface, and a first a second type semiconductor layer and a light emitting layer disposed between the first type semiconductor layer and the second type semiconductor layer; a first electrode connecting the second type semiconductor layer of the first semiconductor structure layer; a second An electrode, the first type semiconductor layer connected to the second semiconductor structure layer, wherein the first electrode and the second electrode are isolated from each other and have a pitch; a third electrode is connected to the first type of the first semiconductor structure layer a semiconductor layer; and a connection layer connecting the first type semiconductor layer of the first semiconductor structure layer and the second type semiconductor layer of the second semiconductor structure layer, the connection And having a spacing between the third electrode, wherein the first electrode, the third electrode, and the first semiconductor structure layer define a first light emitting diode, and the second electrode and the second semiconductor structure layer are defined A second light emitting diode is produced. The light-emitting element of claim 1, wherein the thickness of the first semiconductor structure layer is the same as the thickness of the second semiconductor structure layer. The illuminating element of claim 1, wherein the first semi-conductive The ratio of the orthographic projection area of the bulk structural layer to the orthographic projection area of the second semiconductor structural layer is between 10 and 10,000. The light-emitting element of claim 3, wherein a ratio of an orthographic projection area of the first semiconductor structure layer to an orthographic area of the second semiconductor structure layer is between 100 and 1000. The illuminating element of claim 1, wherein a first surface of the first electrode, a second surface of the second electrode, and a third surface of the third electrode are substantially flush. The light-emitting element of claim 1, wherein the first-type semiconductor layer of the first semiconductor structure layer has a flat portion and a protrusion on the flat portion, and the first semiconductor structural layer The luminescent layer and the second type semiconductor layer are located on the protruding portion, and the third electrode and the connecting layer are respectively connected to the flat portion. The illuminating device of claim 1, further comprising: an insulating layer disposed on the upper surface of the first semiconductor structure layer and the second semiconductor structure layer, and extending at least a semiconductor structure layer and a side surface of the second semiconductor structure layer, and a portion of the insulating layer is located between the connection layer and the upper surface. The light-emitting element of claim 7, wherein the material of the insulating layer comprises ruthenium oxide or tantalum nitride. The illuminating device of claim 1, further comprising: an electrical insulating layer disposed on the connecting layer and located at the first electrode and the Between the connection layers and between the second electrode and the connection layer. The light-emitting element according to claim 1, wherein the first-type semiconductor layer is an N-type semiconductor layer, and the second-type semiconductor layer is a P-type semiconductor layer. The illuminating device of claim 1, further comprising: a pad upper layer disposed between the third electrode and the first type semiconductor layer of the first semiconductor structure layer, the second electrode and the first Between the first type semiconductor layers of the two semiconductor structure layers and between the connection layer and the first type semiconductor layer of the first semiconductor structure layer. The illuminating element of claim 1, further comprising: a conductive structure layer disposed on the second type semiconductor layer of the first semiconductor structure layer and the second type semiconductor of the second semiconductor structure layer On the floor. The light-emitting element of claim 12, wherein the conductive structure layer comprises a reflective layer and a transparent conductive layer, and the reflective layer covers the transparent conductive layer. The light-emitting element of claim 13, wherein the material of the reflective layer comprises aluminum, silver, gold or an alloy thereof. The illuminating element of claim 1, wherein a first surface of the first electrode has a maximum width slightly equal to a maximum width of a third surface of the third electrode, and an area of the first surface is The ratio of the area of the third surface is between 0.9 and 1. A light emitting device package structure includes: a carrier having a bearing surface, a first pad and a second pad, wherein The first pad is separated from the second pad and is located on the bearing surface; and the light emitting device of claim 1, wherein the third electrode is connected to the first pad, and the first electrode An electrode is coupled to the second electrode to the second electrode. The illuminating device package structure of claim 16, wherein the first pad and the third electrode are eutectic, and the second pad and the first electrode and the second electrode are The eutectic bonding is between.