TW201324847A - Flip-chip light emitting diode and manufacturing method and application thereof - Google Patents

Abstract

A flip-chip light emitting diode is disclosed, which includes: a substrate, a semiconductor multilayer structure, first and second diamond-like-carbon/conductive-material composite structures, and a passivation layer. In the flip-chip light emitting diode, the first and second diamond-like-carbon/conductive-material composite structures are used as p- and n-type electrodes to buffer thermal stress caused by coefficient thermal expansion mismatch. A method of manufacturing the abovementioned flip-chip light emitting diode and application thereof is also disclosed.

Description

Flip-chip luminescent diode and its preparation method and application

The present invention relates to a flip-chip light-emitting diode, a manufacturing method thereof and a package structure on a wafer board using the same, in particular, a flip-chip light-emitting diode capable of achieving a coefficient thermal expansion mismatch in a structure. Body and its manufacturing method and package structure on a wafer board using the same.

Since the 1960s, the advantages of low power consumption and long-lasting illumination of Light Emitting Diodes (LEDs) have gradually replaced the use of indicators or light sources for lighting or various electrical appliances in daily life. . What's more, the development of light-emitting diodes towards multi-color and high brightness has been applied to large outdoor display billboards or traffic signs.

In recent years, due to the booming development of the electronics industry and the increasing demand for electronic products, electronic products have entered the direction of multi-functionality and high-efficiency development, and have begun to apply light-emitting diode chips to various electronic products. In particular, the variety of portable electronic products is increasing, the volume and weight of electronic products are getting smaller and smaller, and the required circuit carrier board volume is also becoming smaller. Therefore, the heat dissipation effect of the circuit carrier board becomes a problem worthy of attention. One.

In the case of a light-emitting diode wafer which is frequently used today, since the light-emitting luminance is high enough, it can be widely used in various electronic devices such as a display backlight, a small projector, and illumination. However, at present, nearly 80% of the input power of the LED is converted into thermal energy. If the carrier carrying the LED component cannot effectively dissipate heat, the temperature of the interface of the LED array is increased, in addition to affecting the luminous intensity. In addition, the heat may be accumulated in the LED chip to cause thermal expansion of the layers of the material, which may cause damage to the structure and adversely affect the life of the product.

Accordingly, if the heat dissipation efficiency of the light-emitting diode can be further improved and the adverse effect of the thermal expansion of the light-emitting diode is alleviated or removed, the development of the overall electronics industry can be promoted.

The main object of the present invention is to provide a flip-chip type light-emitting diode having a structural design of a coefficient of thermal expansion mismatch, which can continuously dissipate heat during the operation of the light-emitting diode to generate heat. Even if some of the heat is not dissipated in the self-luminous diode to promote thermal expansion of the overall structure, the multi-layer composite structure of the diamond-like carbon/conductive material disposed therein can buffer the corresponding thermal stress without being damaged.

To achieve the above object, an aspect of the present invention provides a flip-chip light emitting diode comprising: a substrate; a semiconductor epitaxial multilayer composite structure over the substrate and including a first semiconductor epitaxial layer And a second semiconductor epitaxial layer, wherein the first semiconductor epitaxial layer and the second semiconductor epitaxial layer are stacked; a first type of carbon/conductive material multilayer composite structure is located in the semiconductor epitaxial multilayer Above the first semiconductor epitaxial layer of the composite structure, and electrically connecting the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure as a first electrode; and a second type of carbon/conductive material multilayer a composite structure, located above the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure, and electrically connected to the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure as a second electrode; An insulating protective layer covering sidewalls of the first semiconductor epitaxial layer and sidewalls of the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure.

Another aspect of the present invention provides a flip-chip light emitting diode, comprising: a substrate; a semiconductor epitaxial multilayer composite structure, located above the substrate and comprising a first semiconductor epitaxial layer and a second semiconductor beam a seed layer, and a blind via, wherein the first semiconductor epitaxial layer and the second semiconductor epitaxial layer are stacked, and the blind via penetrates the second semiconductor epitaxial layer; a first type of drilled carbon/conducting a multilayer composite structure of the material, located above the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure, and electrically connected to the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure as a first electrode The first type of carbon/conductive material multilayer composite structure is filled in the blind hole of the semiconductor epitaxial multilayer composite structure; a second type of carbon/conductive material multilayer composite structure is located in the semiconductor epitaxial multilayer The second semiconductor epitaxial layer of the composite structure is electrically connected to the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure as a second electrode; and an insulation protection And covering a sidewall of the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer structure and sidewalls of the second semiconductor epitaxial layer, and an inner wall surface of the blind via to isolate the first diamond-like carbon/conductive material Contact between the multilayer composite structure and the second semiconductor epitaxial layer.

In the above flip-chip light-emitting diode of the present invention, the corresponding electrodes of the N-type semiconductor epitaxial layer and the P-type semiconductor epitaxial layer electrically connected to the semiconductor epitaxial multilayer composite structure are designed as diamond-like carbon/conductive materials. Multi-layer composite structure. In other words, the corresponding N-type electrode disposed on the surface of the epitaxial layer of the N-type semiconductor can deposit a metal generally as an N-type electrode, deposit a diamond-like carbon, and selectively deposit a suitable conductive material layer and a diamond-like carbon layer. According to this, a diamond-like carbon/conductive material multilayer composite structure is formed as an N-type electrode corresponding to the N-type semiconductor epitaxial layer. Similarly, for the P-type semiconductor epitaxial layer, the metal generally used as the P-type electrode can be deposited first, and then the diamond-like carbon can be deposited, and the applicable conductive material layer and the diamond-like carbon layer can be selectively deposited repeatedly, thereby forming a diamond-like drill. A carbon/conductive material multilayer composite structure is used as a P-type electrode corresponding to a P-type semiconductor epitaxial layer.

The above-mentioned diamond-like carbon/conductive material multilayer composite structure can make the flip-chip light-emitting diode of the present invention have a buffering capacity for stress caused by a coefficient of thermal expansion mismatch. In other words, the above-mentioned diamond-like carbon/conductive material multi-layer composite structure can accelerate the heat loss in the process of generating heat of the light-emitting diode, even if part of the heat is not lost in the self-luminous diode, and the thermal expansion of the whole structure occurs, the diamond-like drilling The carbon/conductive material multilayer composite structure can also buffer the corresponding thermal stress, and can protect the remaining components of the flip-chip light-emitting diode from damage.

In the above flip-chip light-emitting diode of the present invention, the semiconductor epitaxial multilayer composite structure may selectively further comprise an active intermediate layer sandwiched between the first semiconductor epitaxial layer and the second semiconductor Lei Between the layers. In addition to this, if a blind hole is provided in the structure, the blind hole penetrates through the active intermediate layer. In the present invention, the active intermediate layer may be a multiple quantum well layer for improving the efficiency of converting electrical energy into light energy in the light-emitting diode.

In a preferred embodiment of the present invention, the flip-chip LED preferably further includes a reflective layer disposed on the semiconductor epitaxial multilayer composite structure and the second diamond-like carbon/conductive material multilayer composite Between the structures, the material of the reflective layer may be indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, aluminum, silver, Nickel (Ni), cobalt (Co), palladium (Pd), platinum (Pt), gold (Au), zinc (Zn), tin (Sn), antimony (Sb), lead (Pb), copper (Cu), Copper silver (CuAg), nickel silver (NiAg), alloys thereof, or metal mixtures thereof. The above-mentioned copper-silver (CuAg) and nickel-silver (NiAg) and the like refer to a eutectic metal, and in addition to achieving a reflection effect, the effect of forming an ohmic contact can also be achieved.

The flip-chip light-emitting diode of the present invention is obtained from a general straight-through light-emitting diode or a side-by-side light-emitting diode. Specifically, for the P-type semiconductor epitaxial layer and the N-type semiconductor epitaxial layer of the side-emitting light-emitting diode, a multi-layer composite structure of a diamond-like carbon/conductive material is used as the corresponding electrode, and the P-type semiconductor is epitaxial. The surface of the corresponding electrode of the layer and the corresponding electrode of the N-type semiconductor epitaxial layer form a coplanar plane. In addition, the flip-chip light-emitting diode of the present invention can be insulated by using the insulation of the semiconductor epitaxial multilayer structure and/or the exposed surface, whether it is from a straight-through light-emitting diode or a side-emitting light-emitting diode. Layer coverage.

Preferably, the first semiconductor epitaxial layer and the first diamond-like carbon/conductive material multilayer composite structure (as a first electrode) are N-type, the second semiconductor epitaxial layer and the second diamond-like carbon / Conductive material multilayer composite structure (as a second electrode) is a P type, wherein the first type of carbon/conductive material multilayer composite structure, and the second type of carbon/conductive material multilayer composite structure may be selected from conductive materials At least one of a layer and a conductive carbon drill layer stack structure, a conductive material and a diamond-like carbon mixture, and a conductive group and a conductive diamond-like carbon mixture.

The material of the conductive material layer or the conductive material may be selected from the group consisting of indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene (graphene), and titanium (Ti). ), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), silver (Ag), platinum (Pt), and gold (Au) groups At least one of the groups. In other words, the conductive material layer or the metal may be composed of an alloy or a metal mixture of the above materials. Since the diamond-like carbon has a better coefficient of thermal expansion (CTE), the multi-layer composite structure of the drilled carbon/conductive material as an electrode can be used to buffer thermal expansion when the overall light-emitting diode is thermally expanded. The stress, so the overall structure of the light-emitting diode is not easily affected, and at the same time, the heat loss of the light-emitting diode during operation can be accelerated, and the possibility that the overall structure of the light-emitting diode is damaged by heat is reduced. For example, aluminum (Al), titanium (Ti), nickel (Ni), platinum (Pt), and gold (Au) may be used as the conductive material layer and laminated with the conductive diamond-like carbon layer. A multi-layer composite structure of a carbon/conductive material of the type described in the present invention is constructed.

The flip-chip light-emitting diode of the present invention may further optionally include: a first metal solder layer on the first type of carbon/conductive material multilayer composite structure; and a second metal solder layer in the second type The carbon/conductive material multilayer composite structure is drilled, wherein a surface of the second metal solder layer forms a coplanar with a surface of the first metal solder layer. The above-mentioned flip-chip light-emitting diode of the present invention, as the name implies, is flip-chip bonded to another circuit carrier, so that the surface of the P-type electrode and the N-type electrode of the final LED is used for bonding the metal solder layer. They usually form a coplanar plane with each other.

In addition, in the flip-chip light-emitting diode of the present invention, the surface of the conductive material layer of the first type of carbon/conductive material multilayer composite structure and the conductive material of the second type of carbon/conductive material multilayer composite structure The surface of the layer can also form a coplanar plane. Alternatively, the surface of the conductive diamond-like carbon layer of the first type of carbon/conductive material multilayer composite structure and the surface of the conductive diamond-like carbon layer of the second type of carbon/conductive material multilayer composite structure form a common plane. Alternatively, the surface of the first type of carbon/conductive material multilayer composite structure forms a coplanar surface with the surface of the second type of carbon/conductive material multilayer composite structure. It can be seen from the above that by adjusting the thickness of the diamond-like carbon layer and the conductive material layer in the diamond-like carbon/conductive material multilayer composite structure, the first semiconductor epitaxial layer and the second semiconductor epitaxial layer can be electrically connected respectively. The surface of the multi-layer composite structure of the drilled carbon/conductive material forms a common plane with the surface of the second type of carbon/conductive material multilayer composite structure, and then the surface is subsequently formed on the surface of the first type of drilled carbon/conductive material multilayer composite structure and the second type of drill The surface of the first metal solder layer on the surface of the carbon/conductive material multilayer composite structure forms a common plane with the surface of the second metal solder layer.

In the flip-chip light-emitting diode of the present invention, the surface of the first type of carbon/conductive material multilayer composite structure, the surface of the second type of carbon/conductive material multilayer composite structure, and the surface of the second metal solder layer Or, and/or the surface of the first metal solder layer may be selectively higher, lower or higher than the surface of the insulating protective layer, and the above-mentioned higher means that a common plane is formed.

In a specific embodiment of the present invention, the semiconductor epitaxial multilayer composite structure may be selectively provided with a blind via, the blind via extending through the active intermediate layer and the second semiconductor epitaxial layer, and the insulating protective layer covers the blind The inner wall surface of the hole, wherein the first type of carbon/conductive material multilayer composite structure is filled in the blind hole of the inner wall surface covered with the insulating protective layer, and is connected to the semiconductor epitaxial multilayer composite structure A semiconductor epitaxial layer. The flip-chip light-emitting diode may also optionally include a reflective layer sandwiched between the semiconductor epitaxial multilayer composite structure and the second type of carbon/conductive material multilayer composite structure.

In the flip-chip light-emitting diode of the present invention, the material of the insulating protective layer may be selected from at least one of the group consisting of tantalum nitride, cerium oxide, and insulating diamond-like carbon.

Another object of the present invention is to provide a method for fabricating a flip-chip light-emitting diode by layer-depositing a conductive material layer and a diamond-like carbon layer, so that a diamond-like carbon/conductive material multilayer composite structure can be constructed as a semiconductor. The corresponding electrode of the epitaxial layer absorbs the thermal stress caused by the difference in thermal expansion coefficient, thereby improving the heat dissipation efficiency and the lifetime of the light emitting diode.

In order to achieve the above object, another aspect of the present invention provides a method for fabricating a flip-chip light-emitting diode, comprising the steps of: providing a substrate; forming a semiconductor epitaxial multilayer composite structure over the substrate, wherein The semiconductor epitaxial multilayer composite structure includes a first semiconductor epitaxial layer and a second semiconductor epitaxial layer, wherein the first semiconductor epitaxial layer and the second semiconductor epitaxial layer are stacked; Forming a first type of carbon/conductive material multilayer composite structure and a second type of carbon/conductive material multilayer composite structure over the semiconductor epitaxial layer and the second semiconductor epitaxial layer; Forming a first metal solder layer and a second metal solder layer respectively on the multi-layer composite structure of the conductive material and the multi-layer composite structure of the second type of carbon/conductive material, wherein the surface of the second metal solder layer Forming a surface of the first metal soldering layer; forming an insulating protective layer covering the second diamond-like carbon/conductive material multilayer composite structure, the second semiconductor Epitaxial layer, and a sidewall of the active intermediate layer.

Another aspect of the present invention provides a method for fabricating a flip-chip light-emitting diode, comprising the steps of: providing a substrate; forming a semiconductor epitaxial multilayer composite structure over the substrate, wherein the semiconductor epitaxial multilayer composite structure a first semiconductor epitaxial layer and a second semiconductor epitaxial layer, wherein the first semiconductor epitaxial layer and the second semiconductor epitaxial layer are stacked; and the semiconductor epitaxial multilayer structure is opened a hole, wherein the blind hole penetrates the second semiconductor epitaxial layer; forming an insulating protective layer covering sidewalls of the first semiconductor epitaxial layer and sidewalls of the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure And an inner wall surface of the blind hole to isolate contact between the first type of carbon/conductive material multilayer composite structure and the second semiconductor epitaxial layer; and the first semiconductor epitaxial layer, and the first A first type of carbon/conductive material multilayer composite structure and a second type of carbon/conductive material multilayer composite structure are respectively formed on the second semiconductor epitaxial layer.

In the above method for fabricating a flip-chip light-emitting diode of the present invention, the semiconductor epitaxial multilayer composite structure may optionally further comprise an active intermediate layer sandwiched between the first semiconductor epitaxial layer and The second semiconductor epitaxial layer may be a multiple quantum well layer for improving the efficiency of converting electrical energy into light energy in the light emitting diode. For example, the first semiconductor epitaxial layer and the first diamond-like carbon/conductive material multilayer composite structure N-type, the second semiconductor epitaxial layer and the second diamond-like carbon/conductive material multilayer composite structure P type. In addition to this, if a blind hole is provided in the structure, the blind hole penetrates through the active intermediate layer.

In the manufacturing method of the above-mentioned flip chip type light emitting diode of the present invention, the first type of carbon/conductive material multilayer composite structure, and the second type of carbon/conductive material multilayer composite structure may be selected from a free conductive material layer and conductive. At least one of a carbon-like drill layer stack structure, a conductive material and a diamond-like carbon mixture, and a group of conductive materials and conductive diamond-like carbon mixtures. Wherein, the conductive material layer or the material of the conductive material is selected from the group consisting of indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene (graphene), Titanium (Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), silver (Ag), platinum (Pt), and gold (Au) At least one of the grouped groups.

In the method for fabricating the above-mentioned flip-chip light-emitting diode of the present invention, the surface of the conductive material layer of the first type of carbon/conductive material multilayer composite structure and the conductive material layer of the second type of carbon/conductive material multilayer composite structure Forming a common plane on the surface; or, the surface of the conductive diamond-like carbon layer of the first type of carbon/conductive material multilayer composite structure is formed together with the surface of the conductive diamond-like carbon layer of the second type of carbon/conductive material multilayer composite structure Or a plane of the first type of carbon/conductive material multilayer composite structure and a surface of the second type of carbon/conductive material multilayer composite structure.

The method for fabricating the above-mentioned flip-chip light-emitting diode of the present invention may further include the following steps: on the first type of carbon/conductive material multilayer composite structure, and the second type of carbon/conductive material multilayer composite structure, Forming a first metal solder layer and a second metal solder layer, respectively, wherein a surface of the second metal solder layer and the surface of the first metal solder layer form a coplanar plane. In addition, the surface of the first type of carbon/conductive material multilayer composite structure, the surface of the second type of carbon/conductive material multilayer composite structure, the surface of the second metal solder layer, or/and the first metal The surface of the solder layer may also be higher or lower than or at least coplanar with the surface of the insulating protective layer.

In the above method for fabricating a flip-chip light-emitting diode according to the present invention, the first type of carbon/conductive material multilayer composite structure and the first metal solder layer are formed after or before the formation of the insulating protective layer. In addition, the first type of carbon/conductive material multilayer composite structure and the second type of carbon/conductive material multilayer composite structure are simultaneously formed or separately formed.

In a specific embodiment of the present invention, the method for fabricating the flip-chip light-emitting diode further includes the following steps: before forming the second type of carbon/conductive material multilayer composite structure on the semiconductor epitaxial multilayer composite structure A reflective layer is formed. In addition, the first type of carbon/conductive material multilayer composite structure may be formed after the insulating protective layer is formed. The method for fabricating the flip-chip light-emitting diode may further include the step of forming a reflective layer on the semiconductor epitaxial multilayer composite structure before the insulating protective layer is formed.

In the manufacturing method of the flip-chip light-emitting diode of the present invention, the material of the insulating protective layer may be tantalum nitride, cerium oxide, insulating diamond-like carbon, or a combination thereof, which is used for isolating between two components. Directly contact and protect the components it covers.

In addition, another object of the present invention is to provide a chip on board (COB) in which the above-mentioned light emitting diode having a conductive diamond-like carbon layer of the present invention is in a polycrystalline manner. Or the wire bonding method is electrically connected to the circuit carrier board. Therefore, the thermal expansion stress of each layer structure of the light emitting diode can be buffered by the diamond-like carbon layer in the structure, thereby further improving the heat dissipation efficiency, the illumination life and the lifetime of the package structure on the wafer board. .

In order to achieve the above object, another aspect of the present invention provides a chip on board (COB) including: a circuit carrier board; and the above-mentioned flip chip type light emitting diode of the present invention The first electrode and the second electrode are electrically connected to the circuit carrier.

In the above-mentioned wafer-on-board package structure, the circuit carrier board may comprise an insulating layer and a circuit substrate, wherein the insulating layer is made of insulating diamond-like carbon, aluminum oxide, ceramic, diamond-containing epoxy. The resin, or a composition thereof, or a metal material having a surface covered with the insulating layer, and the circuit substrate may be a metal plate, a ceramic plate or a substrate. In addition, the surface of the circuit carrier can also optionally include a type of drilled carbon layer to increase the heat dissipation effect.

The embodiments of the present invention are described by way of specific examples, and those skilled in the art can readily appreciate the other advantages and advantages of the present invention. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention.

The drawings in the embodiments of the present invention are simplified schematic diagrams. However, the drawings show only the components related to the present invention, and the components shown therein are not in actual implementation, and the number of components, the shape, and the like in actual implementation are a selective design, and the component layout thereof. The pattern may be more complicated.

Embodiment 1

Referring to FIG. 1A to FIG. 1F , a schematic structural diagram of a method for preparing a flip-chip light-emitting diode of the present embodiment is shown.

First, as shown in FIG. 1A, a substrate 40 is provided. Next, as shown in FIG. 1B, a semiconductor epitaxial multilayer composite structure 41 is formed on the substrate 40. The semiconductor epitaxial multilayer composite structure 41 may include: a first semiconductor epitaxial layer 411, an active intermediate layer 412, and a second semiconductor epitaxial layer 413, wherein the first semiconductor epitaxial layer 411, the active intermediate The layer 412 is stacked on the second semiconductor epitaxial layer 413, and the active intermediate layer 412 is interposed between the first semiconductor epitaxial layer 411 and the second semiconductor epitaxial layer 413, and the active intermediate layer 412 and the second semiconductor epitaxial layer 413 expose the surface of the first semiconductor epitaxial layer 411. In the present embodiment, the material of the semiconductor epitaxial multilayer composite structure 41 is gallium nitride (GaN), and the first semiconductor epitaxial layer 411 is N-type, and the second semiconductor epitaxial layer 413 is P-type. However, the material suitable for the semiconductor epitaxial multilayer composite structure of the present invention is not limited thereto, and other materials commonly used in the art may also be used. In addition, the active intermediate layer can be selected according to requirements. In the embodiment, the active intermediate layer 412 is a multiple quantum well layer for improving electrical energy conversion into light energy in the light emitting diode. effectiveness.

As shown in FIG. 1C, a reflective layer 42 is formed on the surface of the second semiconductor epitaxial layer 413 of the semiconductor epitaxial multilayer composite structure 41. In this embodiment, the reflective layer 42 may be selected from indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, aluminum, and silver. , nickel (Ni), cobalt (Co), palladium (Pd), platinum (Pt), gold (Au), zinc (Zn), tin (Sn), antimony (Sb), lead (Pb), copper (Cu) At least one of the group of copper-silver (CuAg) and nickel-silver (NiAg), in other words, it may be a multi-layer metal structure, in addition to achieving a reflection effect, an ohmic contact may also be formed. The utility. This step of forming a reflective layer can be selectively performed by a person of ordinary skill in the art to which the present invention pertains.

Next, as shown in FIG. 1D, a first diamond-like carbon/conductive material multilayer composite structure 46 is formed on the surface of the first semiconductor epitaxial layer 411 and the surface of the reflective layer 42 of the semiconductor epitaxial multilayer composite structure 41, respectively. And a second type of carbon/conductive material multilayer composite structure 43. The first type of carbon/conductive material multilayer composite structure 46 and the second type of carbon/conductive material multilayer composite structure 43 may be selected from a conductive material layer and a conductive carbon drill layer stack structure, a conductive material and a diamond-like carbon mixture, And at least one of the group of the conductive material and the conductive diamond-like carbon mixture, wherein the conductive material layer or the conductive material is selected from the group consisting of indium tin oxide (ITO), aluminum oxide zinc ( Aluminum zinc oxide, AZO), zinc oxide (ZnO), graphene, titanium (Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten At least one of the group of (W), silver (Ag), platinum (Pt), and gold (Au). In this embodiment, the first type of carbon/conductive material multilayer composite structure 46 is a titanium conductive material layer, an aluminum conductive material layer and a diamond-like carbon layer repeatedly laminated structure, and the second type of carbon/conductive material multilayer composite structure The 43 series titanium conductive material layer and the diamond-like carbon layer are repeatedly laminated.

Then, as shown in FIG. 1E, a first metal solder layer 47 is formed on the surface of the first type of drilled carbon/conductive material multilayer composite structure 46 and the second type of drilled carbon/conductive material multilayer composite structure 43 respectively. The second metal solder layer 44, wherein the surface of the first metal solder layer 37 and the surface of the second metal solder layer 34 form a coplanar surface. In this embodiment, the first metal solder layer 47 and the second metal solder layer 44 are composed of a gold layer and a gold tin layer, and the gold tin layer is a eutectic conductive material layer.

Finally, as shown in FIG. 1F, an insulating protective layer 45 is formed to cover the semiconductor epitaxial multilayer composite structure 41 (that is, the first semiconductor epitaxial layer 413, the active intermediate layer 412, and the second semiconductor epitaxial layer 413). The reflective layer 42, the first diamond-like carbon/conductive material multilayer composite structure 46, the second diamond-like carbon/conductive material multilayer composite structure 43, the first metal solder layer 47 and the second metal solder layer 44 a sidewall and exposing the surface of the first metal solder layer 47 and the second metal solder layer 44. The material of the insulating protective layer 25 may be selected from at least one selected from the group consisting of tantalum nitride, cerium oxide, and insulating diamond-like carbon for protecting the first semiconductor epitaxial layer 413 covered by the insulating layer. The second semiconductor epitaxial layer 413, the active intermediate layer 412, the reflective layer 42, the first diamond-like carbon/conductive material multilayer composite structure 46, and the second diamond-like carbon/conductive material multilayer composite structure 43 A metal solder layer 47 and the second metal solder layer 44 are electrically isolated from the first diamond-like carbon/conductive material multilayer composite structure 46 and the second diamond-like carbon/conductive material multilayer composite structure 43. In the present embodiment, cerium oxide is used as the material of the insulating protective layer 45. The insulating protective layer 45 may also not cover and expose the first metal solder layer 47 and the second metal solder layer 44.

Accordingly, as shown in FIG. 1F, the flip-chip LED 4 obtained above includes: a substrate 40; a semiconductor epitaxial multilayer composite structure 41 located above the substrate 40 and including a first semiconductor An epitaxial layer 411, an active intermediate layer 412, and a second semiconductor epitaxial layer 413, wherein the first semiconductor epitaxial layer 411, the active intermediate layer 412, and the second semiconductor epitaxial layer 413 are stacked The active intermediate layer 412 is interposed between the first semiconductor epitaxial layer 411 and the second semiconductor epitaxial layer 413; a reflective layer 42 is disposed on the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure 41. a layer 413 surface; a first type of carbon/conductive material multilayer composite structure 46, contacting the surface of the first semiconductor epitaxial layer 411 of the semiconductor epitaxial multilayer composite structure 41 as a first electrode; a first metal a soldering layer 47 is disposed on the first type of carbon/conductive material multilayer composite structure 46; a second type of carbon/conductive material multilayer composite structure 43 is located on the surface of the reflective layer 42 and electrically connected via the reflective layer 42. Semiconductor epitaxial multilayer composite structure 4 The second semiconductor epitaxial layer 413 is used as a second electrode; a second metal solder layer 44 is disposed on the second diamond-like carbon/conductive material multilayer composite structure 43, wherein the second metal is soldered The surface of the layer 44 forms a coplanar surface with the surface of the first metal solder layer 47; and an insulating protective layer 45 covering the first metal solder layer 47, the second metal solder layer 44, the first type of drill carbon/conducting a material multilayer composite structure 46, the second diamond-like carbon/conductive material multilayer composite structure 43, the reflective layer 42, the first semiconductor epitaxial layer 411, the second semiconductor epitaxial layer 413, and the active intermediate layer 412 The sidewalls electrically isolate the first type of carbon/conductive material multilayer composite structure 46 from the second type of carbon/conductive material multilayer composite structure 43.

Embodiment 2

Referring to FIG. 2, it is a schematic structural view showing a flip-chip type light emitting diode of this embodiment.

As shown in FIG. 2, the flip-chip light-emitting diode comprises: a substrate 50, a semiconductor epitaxial multilayer composite structure 51, a reflective layer 52, a first type of carbon/conductive material multilayer composite structure 56, A second type of carbon/conductive material multilayer composite structure 53, a first metal solder layer 57, a second metal solder layer 54, and an insulating protective layer 55.

The semiconductor epitaxial multilayer composite structure 51 is located on the surface of the substrate 50 and includes a first semiconductor epitaxial layer 511, an active intermediate layer 512, and a second semiconductor epitaxial layer 513, wherein the first semiconductor epitaxial layer 511 The active intermediate layer 512 is stacked on the second semiconductor epitaxial layer 513, and the active intermediate layer 512 is interposed between the first semiconductor epitaxial layer 511 and the second semiconductor epitaxial layer 513. The reflective layer 52 is located on the surface of the second semiconductor epitaxial layer 513 of the semiconductor epitaxial multilayer composite structure 51.

The first type of carbon/conductive material multilayer composite structure 56 includes a first conductive material layer 561 and a first diamond-like carbon layer 562, and the first conductive material layer 561 is laminated with the first diamond-like carbon layer 562. The first conductive material layer 561 is configured as a first electrode and is in contact with the first semiconductor epitaxial layer 511. In another aspect, the second type of carbon/conductive material multilayer composite structure 53 includes a second conductive material layer 531 and a second diamond-like carbon layer 532, and the second conductive material layer 531 and the second type of drill The carbon layer 532 is stacked, wherein the second conductive material layer 531 is disposed on the surface of the reflective layer 52 as a first electrode, and electrically connected to the second semiconductor epitaxial layer 513 by the reflective layer 52. connection. In addition, the surface of the second conductive material layer 531 of the second type of carbon/conductive material multilayer composite structure 53 is formed on the surface of the first conductive material layer 561 of the first diamond-like carbon/conductive material multilayer composite structure 56. Plane, and the surface of the second type of drilled carbon layer 532 of the second type of carbon/conductive material multilayer composite structure 53 is also the first type of carbon layer 562 of the first type of carbon/conductive material multilayer composite structure 56. The surface forms a common plane.

The first metal solder layer 57 is located on the first diamond-like carbon/conductive material multilayer composite structure 56, and the second metal solder layer 54 is located on the second diamond-like carbon/conductive material multilayer composite structure 53, and the second The surface of the metal solder layer 54 forms a coplanar surface with the surface of the first metal solder layer 57.

The insulating protective layer 55 covers the first metal solder layer 57, the second metal solder layer 54, the first diamond-like carbon/conductive material multilayer composite structure 56, and the second diamond-like carbon/conductive material multilayer composite structure 53, a reflective layer 52, the second semiconductor epitaxial layer 513, and sidewalls of the active intermediate layer 512 to electrically isolate the first diamond-like carbon/conductive material multilayer composite structure 56 and the second diamond-like carbon/conductive material multilayer The composite structure 53, in other words, avoids direct contact between the first electrode and the second electrode to cause a short circuit.

Embodiment 3

Referring to FIG. 3, it is a schematic structural view of the flip-chip light-emitting diode of this embodiment.

As shown in FIG. 3, the flip-chip light-emitting diode comprises: a substrate 60, a semiconductor epitaxial multilayer composite structure 61, a reflective layer 62, a first type of carbon/conductive material multilayer composite structure 66, and a first A second type of carbon/conductive material multilayer composite structure 63, a first metal solder layer 67, a second metal solder layer 64, and an insulating protective layer 65.

The semiconductor epitaxial multilayer composite structure 61 is located on the surface of the substrate 60 and includes a first semiconductor epitaxial layer 611, an active intermediate layer 612, and a second semiconductor epitaxial layer 613, wherein the first semiconductor epitaxial layer 611 The active intermediate layer 612 is stacked on the second semiconductor epitaxial layer 613, and the active intermediate layer 612 is interposed between the first semiconductor epitaxial layer 611 and the second semiconductor epitaxial layer 613. The reflective layer 62 is located on the surface of the second semiconductor epitaxial layer 613 of the semiconductor epitaxial multilayer composite structure 61.

The first type of carbon/conductive material multilayer composite structure 66 includes a first conductive material layer 661 and a first diamond-like carbon layer 662, and the first conductive material layer 661 is laminated with the first diamond-like carbon layer 662. The first conductive material layer 661 is configured as a first electrode and is in contact with the first semiconductor epitaxial layer 611. In another aspect, the second type of carbon/conductive material multilayer composite structure 63 includes a second conductive material layer 631 and a second diamond-like carbon layer 632, and the second conductive material layer 631 and the second type of drill The carbon layer 632 is stacked, wherein the second conductive material layer 631 is disposed on the surface of the reflective layer 62 as a first electrode, and electrically connected to the second semiconductor epitaxial layer 613 by the reflective layer 62. connection. In addition, the surface of the second type of drilled carbon layer 632 of the second type of carbon/conductive material multilayer composite structure 63 is also the surface of the first type of drilled carbon layer 662 of the first type of carbon/conductive material multilayer composite structure 66. Form a common plane.

The first metal solder layer 67 is located on the first diamond-like carbon/conductive material multilayer composite structure 66, and the second metal solder layer 64 is located on the second diamond-like carbon/conductive material multilayer composite structure 63, and the second The surface of the metal solder layer 64 forms a coplanar surface with the surface of the first metal solder layer 67.

The insulating protective layer 65 covers the first metal solder layer 67, the second metal solder layer 64, the first diamond-like carbon/conductive material multilayer composite structure 66, and the second diamond-like carbon/conductive material multilayer composite structure 63. a reflective layer 62, the second semiconductor epitaxial layer 613, and sidewalls of the active intermediate layer 612 to electrically isolate the first diamond-like carbon/conductive material multilayer composite structure 66 and the second diamond-like carbon/conductive material multilayer The composite structure 63, in other words, avoids direct contact between the first electrode and the second electrode to cause a short circuit.

Embodiment 4

Referring to FIG. 4, it is a schematic structural view of the flip-chip light-emitting diode of this embodiment.

As shown in FIG. 4, the flip-chip LED includes a substrate 30, a semiconductor epitaxial multilayer composite structure 31, a reflective layer 32, and a first type of carbon/conductive material multilayer composite structure 36. A second type of carbon/conductive material multilayer composite structure 33, a first metal solder layer 37, a second metal solder layer 34, and an insulating protective layer 35.

The semiconductor epitaxial multilayer composite structure 31 is located on the surface of the substrate 30 and includes a first semiconductor epitaxial layer 311, an active intermediate layer 312, and a second semiconductor epitaxial layer 313, wherein the first semiconductor epitaxial layer 311 The active intermediate layer 312 is stacked on the second semiconductor epitaxial layer 313, and the active intermediate layer 312 is interposed between the first semiconductor epitaxial layer 311 and the second semiconductor epitaxial layer 313. The reflective layer 32 is located on the surface of the second semiconductor epitaxial layer 313 of the semiconductor epitaxial multilayer composite structure 31.

The first type of carbon/conductive material multilayer composite structure 36 includes a first conductive material layer 361 and a first diamond-like carbon layer 362, and the first conductive material layer 361 is laminated with the first diamond-like carbon layer 362. The first conductive material layer 361 is configured as a first electrode and is in contact with the first semiconductor epitaxial layer 311. In another aspect, the second type of carbon/conductive material multilayer composite structure 33 includes a second conductive material layer 331 and a second diamond-like carbon layer 332, and the second conductive material layer 331 and the second type of drill The carbon layer 332 is stacked, wherein the second conductive material layer 331 is disposed on the surface of the reflective layer 32 as a first electrode, and electrically connected to the second semiconductor epitaxial layer 313 by the reflective layer 32. Connected, and the second type of drilled carbon layer 332 contacts two adjacent second conductive material layers 331 such that two adjacent light emitting diodes are connected in series.

The first metal solder layer 37 is located on the first diamond-like carbon/conductive material multilayer composite structure 36, and the second metal solder layer 34 is located on the second diamond-like carbon/conductive material multilayer composite structure 33, and the first A portion of the surface of the metal solder layer 37 forms a coplanar surface with a portion of the surface of the second metal solder layer 34.

The insulating protective layer 35 covers the first metal solder layer 37, the second metal solder layer 34, the first diamond-like carbon/conductive material multilayer composite structure 36, and the second diamond-like carbon/conductive material multilayer composite structure 33. a reflective layer 32, the second semiconductor epitaxial layer 313, and sidewalls of the active intermediate layer 312 to electrically isolate the first diamond-like carbon/conductive material multilayer composite structure 36 and the second diamond-like carbon/conductive material multilayer The composite structure 33, and electrically isolating the second carbon-like layer 332 connecting the two adjacent second conductive material layers 331 with the first conductive material layer 361 therebetween, in other words, avoiding the first electrode and the second electrode directly A short circuit occurs during contact.

Embodiment 5

Referring to FIG. 5, it is a schematic structural view of a package structure on a wafer board of the present embodiment.

As shown in FIG. 5, the package structure on the wafer board includes: a circuit carrier 7; and the flip chip type light emitting diode 4 obtained in the first embodiment, through the first metal solder layer 47 and the first The second metal soldering layer 44 is electrically connected to the circuit carrier 7 , wherein the circuit carrier 7 includes an insulating layer 71 , a circuit substrate 70 , and an electrical connection pad 73 . Carbon, alumina, ceramic, diamond-containing epoxy resin, or a mixture of the above materials, the circuit substrate 70 is a metal plate, a ceramic plate or a substrate.

In the package structure of the wafer board, the first metal solder layer 47 and the second metal solder layer 44 and the circuit carrier 7 can be formed by soldering through the solder 72 formed on the surface of the electrical connection pad 73. The electrical connection pads 73 are electrically connected.

Accordingly, in the above chip on board (COB) of the present invention, the thermal expansion stress of each layer structure of the light emitting diode can be buffered by the diamond-like carbon layer in the structure, thereby further encapsulating the entire package structure on the wafer board. Good heat dissipation efficiency, illumination and life. Moreover, the light-emitting diode suitable for use in the above-described wafer-on-package structure of the present invention is not limited to the flip-chip light-emitting diode obtained in the above first embodiment, and any flip-chip type according to the present invention may be used. Light-emitting diode.

Accordingly, the flip-chip light-emitting diode of the present invention has a structural design of a coefficient thermal expansion mismatch, which can continuously dissipate heat during the operation of the light-emitting diode to generate heat; even if there is a part of heat The absence of self-luminous diodes causes the thermal expansion of the overall structure, and the multi-layer composite structure of the diamond-like carbon/conductive material disposed therein can also buffer the corresponding thermal stress without protection from damage.

The above-described embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above described embodiments.

30, 40, 50, 60. . . Substrate

31, 41, 51, 61. . . Semiconductor epitaxial multilayer composite structure

311, 411, 511, 611. . . First semiconductor epitaxial layer

312, 412, 512, 612. . . Active intermediate layer

313, 413, 513, 613. . . Second semiconductor epitaxial layer

32, 42, 52, 62. . . Reflective layer

33, 43, 53, 63. . . The second type of carbon/conductive material multilayer composite structure

34, 44, 54, 64. . . Second metal solder layer

35, 45, 55, 65. . . Insulating protective layer

36, 46, 56, 66. . . The first type of carbon/conductive material multilayer composite structure

37, 47, 57, 67. . . First metal solder layer

331, 531, 631. . . Second conductive material layer

332, 532, 632. . . Second type of carbon layer

361, 561, 661. . . First conductive material layer

362, 562, 662. . . First type of carbon layer

1A to 1F are schematic diagrams showing the flow structure of a method for preparing a flip-chip light-emitting diode according to Embodiment 1 of the present invention.

2 is a schematic view showing the structure of a flip-chip type light emitting diode according to Embodiment 2 of the present invention.

3 is a schematic view showing the structure of a flip-chip light-emitting diode according to Embodiment 3 of the present invention.

4 is a schematic view showing the structure of a flip-chip light-emitting diode according to Embodiment 4 of the present invention.

FIG. 5 is a schematic structural view showing a package structure on a wafer board according to Embodiment 5 of the present invention.

40. . . Substrate

41. . . Semiconductor epitaxial multilayer composite structure

411. . . First semiconductor epitaxial layer

412. . . Active intermediate layer

413. . . Second semiconductor epitaxial layer

4. . . Flip-chip light-emitting diode

42. . . Reflective layer

43. . . The second type of carbon/conductive material multilayer composite structure

44. . . Second metal solder layer

45. . . Insulating protective layer

46. . . The first type of carbon/conductive material multilayer composite structure

47. . . First metal solder layer

Claims (31)

A flip-chip light-emitting diode comprising: a substrate; a semiconductor epitaxial multilayer composite structure over the substrate and comprising a first semiconductor epitaxial layer and a second semiconductor epitaxial layer, wherein the a semiconductor epitaxial layer and the second semiconductor epitaxial layer are stacked; a first type of carbon/conductive material multilayer composite structure is located above the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure, and is electrically The first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure is connected as a first electrode; and a second type of carbon/conductive material multilayer composite structure is located in the semiconductor epitaxial multilayer composite structure a second semiconductor epitaxial layer over the semiconductor epitaxial layer and electrically connected to the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure as a second electrode; and an insulating protective layer covering the semiconductor epitaxial multilayer composite structure a sidewall of the first semiconductor epitaxial layer and a sidewall of the second semiconductor epitaxial layer. The flip-chip light-emitting diode according to claim 1, wherein the semiconductor epitaxial multilayer composite structure further comprises an active intermediate layer sandwiched between the first semiconductor epitaxial layer and Between the second semiconductor epitaxial layers. The flip-chip light emitting diode according to claim 1, wherein the first type of carbon/conductive material multilayer composite structure and the second type of carbon/conductive material multilayer composite structure are selected from conductive At least one of a group of a material layer and a conductive carbon drill layer stack structure, a conductive material and a diamond-like carbon mixture multilayer structure, and a conductive structure and a conductive diamond-like carbon mixture multilayer structure. The flip-chip light-emitting diode according to claim 3, wherein the conductive material layer or the conductive material is selected from the group consisting of indium tin oxide (ITO) and aluminum zinc oxide (aluminum). Zinc oxide, AZO), zinc oxide (ZnO), graphene, titanium (Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten ( At least one of the group of W), silver (Ag), platinum (Pt), and gold (Au). The flip-chip light-emitting diode according to claim 3, wherein the surface of the conductive material layer of the first type of carbon/conductive material multilayer composite structure and the second type of carbon/conductive material multilayer composite structure The surface of the conductive material layer forms a coplanar plane. The flip-chip light-emitting diode according to claim 3, wherein the surface of the conductive diamond-like carbon layer of the first type of carbon/conductive material multilayer composite structure and the second type of carbon/conductive material multilayer The surface of the conductive diamond-like carbon layer of the composite structure forms a common plane. The flip-chip light-emitting diode according to claim 1, wherein the surface of the first type of carbon/conductive material multilayer composite structure and the surface structure of the second type of carbon/conductive material multilayer composite structure Form a common plane. The flip-chip light-emitting diode according to claim 1, further comprising: a first metal solder layer on the first type of carbon/conductive material multilayer composite structure; and a second metal solder layer The second metal-welded layer has a surface that is coplanar with the surface of the first metal solder layer. The flip-chip light-emitting diode according to claim 8, wherein the surface of the first type of carbon/conductive material multilayer composite structure, the surface of the second type of carbon/conductive material multilayer composite structure, The surface of the second metal solder layer, or/and the surface of the first metal solder layer, is higher or lower than or at a level coplanar with the surface of the insulating protective layer. The flip-chip light-emitting diode according to claim 1, further comprising a reflective layer sandwiched between the semiconductor epitaxial multilayer composite structure and the second type of carbon/conductive material multilayer composite structure. The flip-chip light-emitting diode according to claim 1, wherein the insulating protective layer is made of at least one selected from the group consisting of tantalum nitride, cerium oxide, and insulating diamond-like carbon. By. The flip-chip light-emitting diode according to claim 1, wherein the first semiconductor epitaxial layer and the first diamond-like carbon/conductive material multilayer composite structure are N-type, the second semiconductor epitaxial The layer and the second type of carbon/conductive material multilayer composite structure are P type. A method for fabricating a flip-chip light-emitting diode, comprising the steps of: providing a substrate; forming a semiconductor epitaxial multilayer composite structure over the substrate, wherein the semiconductor epitaxial multilayer composite structure comprises a first semiconductor epitaxial layer And a second semiconductor epitaxial layer, wherein the first semiconductor epitaxial layer and the second semiconductor epitaxial layer are stacked; above the first semiconductor epitaxial layer and the second semiconductor epitaxial layer respectively Forming a first type of carbon/conductive material multilayer composite structure, and a second type of carbon/conductive material multilayer composite structure; and forming an insulating protective layer covering the semiconductor epitaxial multilayer composite structure a sidewall of a semiconductor epitaxial layer and a sidewall of the second semiconductor epitaxial layer. The method for fabricating a flip-chip light-emitting diode according to claim 13, wherein the semiconductor epitaxial multilayer composite structure further comprises an active intermediate layer, the active intermediate layer being sandwiched between the first semiconductor beam Between the crystal layer and the second semiconductor epitaxial layer. The method for manufacturing a flip-chip light-emitting diode according to claim 14, wherein the first type of carbon/conductive material multilayer composite structure and the second type of carbon/conductive material multilayer composite structure The at least one of the group of the conductive material layer and the conductive carbon-drill layer stack structure, the conductive material and the diamond-like carbon mixture multilayer structure, and the conductive material and the conductive diamond-like carbon mixture multilayer structure are selected. The method for manufacturing a flip-chip light-emitting diode according to claim 15, wherein the conductive material layer or the conductive material is selected from the group consisting of indium tin oxide (ITO) and aluminum oxide. Aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, titanium (Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo) At least one of the group of tungsten (W), silver (Ag), platinum (Pt), and gold (Au). The method for manufacturing a flip-chip light-emitting diode according to claim 15, wherein the surface of the conductive material layer of the first type of carbon/conductive material multilayer composite structure and the second type of carbon/conductive material The surface of the conductive material layer of the multilayer composite structure forms a coplanar plane. The method for manufacturing a flip-chip light-emitting diode according to claim 15, wherein the surface of the conductive diamond-like carbon layer of the first type of carbon/conductive material multilayer composite structure and the second type of drill carbon/ The surface of the conductive diamond-like carbon layer of the multi-layer composite structure of the conductive material forms a common plane. The method for manufacturing a flip-chip type light emitting diode according to claim 13, wherein the surface of the first type of carbon/conductive material multilayer composite structure and the second type of carbon/conductive material multilayer composite structure The surface forms a coplanar plane. The method for manufacturing a flip-chip light-emitting diode according to claim 13 , further comprising the steps of: the first type of carbon/conductive material multilayer composite structure, and the second type of carbon/conductive material A first metal solder layer and a second metal solder layer are respectively formed on the multi-layer composite structure, wherein a surface of the second metal solder layer and the surface of the first metal solder layer form a coplanar plane. The method for manufacturing a flip-chip light-emitting diode according to claim 20, wherein the surface of the first type of carbon/conductive material multilayer composite structure, the second type of carbon/conductive material multilayer composite structure The surface, the surface of the second metal solder layer, or/and the surface of the first metal solder layer are above or below a surface of the insulating protective layer or form a coplanar relationship therewith. The method for manufacturing a flip-chip type light emitting diode according to claim 20, wherein the first type of carbon/conductive material multilayer composite structure and the first metal solder layer are formed after the insulating protective layer is formed or Formed before. The method for manufacturing a flip-chip light-emitting diode according to claim 13, wherein the first type of carbon/conductive material multilayer composite structure and the second type of carbon/conductive material multilayer composite structure are simultaneously Formed or formed separately. The method for manufacturing a flip-chip type light-emitting diode according to claim 13, further comprising the step of: forming a semiconductor epitaxial multilayer composite structure before the forming of the second type of carbon/conductive material multilayer composite structure A reflective layer is formed thereon. The method for manufacturing a flip-chip light-emitting diode according to claim 22, wherein the first type of carbon/conductive material multilayer composite structure is formed after the insulating protective layer is formed. The method for fabricating a flip-chip type light emitting diode according to claim 25, further comprising the step of forming a reflective layer on the semiconductor epitaxial multilayer composite structure before the insulating protective layer is formed. The method for manufacturing a flip-chip type light-emitting diode according to claim 13, wherein the material of the insulating protective layer is tantalum nitride, cerium oxide, insulating diamond-like carbon, or a combination thereof. The method for manufacturing a flip-chip light-emitting diode according to claim 13, wherein the first semiconductor epitaxial layer and the first diamond-like carbon/conductive material multilayer composite structure are N-type, the second The semiconductor epitaxial layer and the second type of carbon/conductive material multilayer composite structure are P-type. A chip on board (COB), comprising: a circuit carrier board; and a flip chip type light emitting diode according to any one of claims 1 to 12, wherein The circuit carrier is packaged via the first metal solder layer and the second metal solder layer. The package structure on a wafer-on-board according to claim 29, wherein the circuit carrier comprises an insulating layer and a circuit substrate, the material of the insulating layer is selected from the group consisting of diamond-like carbon, alumina, ceramics, And at least one of the groups of diamond-containing epoxy resins. The package structure on a wafer-on-board according to claim 30, wherein the circuit substrate is a metal plate, a ceramic plate or a substrate.