TWI455665B - Flip-chip light emitting diode on board module and method of fabricating the same - Google Patents

Description

Flip-chip LED package module and its preparation method

The invention relates to a flip-chip LED package module and a method for manufacturing the same, in particular to a method for manufacturing a flip-chip LED package module combining a specific solder alloy layer and a metal solder layer.

In 1962, Nick of General Electric Company. Nick Holonyak Jr. developed the first practical application of Light Emitting Diode (LED), and with the ever-increasing technology, various color LEDs should also be developed. . Under the premise of the pursuit of sustainable development by human beings today, the low power consumption of LEDs and the long-lasting illumination have gradually replaced the indicators used in daily life for lighting or various electrical equipment. Or use of light sources. What's more, the development of light-emitting diodes towards multi-color and high brightness has been applied to large outdoor display billboards or traffic signs.

Since the beginning of the 21st century, the electronic industry has flourished, and electronic products have become an indispensable part of life. Therefore, enterprises are mainly engaged in the development of electronic products with versatility and high-efficiency development. For a variety of electronic products. In particular, the variety of portable electronic products is increasing, the volume and weight of electronic products are getting smaller and smaller, and the required circuit carrier board volume is also becoming smaller. Therefore, the heat dissipation effect of the circuit carrier board becomes a problem worthy of attention. One.

In the case of a light-emitting diode wafer which is frequently used today, since the light-emitting luminance is high enough, it can be widely used in various electronic devices such as a display backlight, a small projector, and illumination. However, at present, nearly 80% of the input power of the LED is converted into thermal energy. If the carrier carrying the LED component cannot effectively dissipate heat, the temperature of the interface of the LED array is increased, in addition to affecting the luminous intensity. In addition, the heat may be accumulated in the LED chip to cause thermal expansion of the layers, which may cause damage to the structure and adversely affect the life of the product. In addition, the light excited by the LED is diffused by radiation. Not all light is scattered through the surface of the light-emitting diode, resulting in poor light output and the most effective light output rate.

Accordingly, if the heat dissipation efficiency of the light-emitting diode can be further improved and the adverse effect of the thermal expansion of the light-emitting diode is alleviated or removed, and a structural overall design is sought to enhance the light-emitting rate, the development of the overall electronics industry can be promoted. .

The main object of the present invention is to provide a method for manufacturing a flip chip on board LED (FCOB LED), which uses a metal having a lower cost as a solder material to reduce manufacturing cost. The flip-chip LED package module used has a structural design that buffers the difference in thermal expansion coefficient and enhances the output light rate, and can continuously dissipate heat during the operation of the light-emitting diode to generate heat. Even if some of the heat is not lost in the self-luminous diode, the whole structure is thermally expanded. The expansion, in which the diamond-like carbon/conductive material multilayer composite structure is disposed, can also buffer the corresponding thermal stress without protection from damage, and can increase the output light rate by concentrating the light beam by the insulating protective layer.

In order to achieve the above object, an aspect of the present invention provides a method for fabricating a flip-chip LED package module, comprising: providing a circuit carrier, comprising at least one electrical connection pad; and a solder alloy layer Provided on the electrical connection pad, wherein the solder alloy layer may be at least one selected from the group consisting of tin (Sn), silver (Ag), copper (Cu), bismuth (Bi), or an alloy thereof; The light emitting diode may include a first metal solder layer and a second metal solder layer, and the first metal solder layer and the second metal solder layer are made of gold (Au), tin (Sn), and silver ( Ag), composed of copper (Cu); and the flip-chip light-emitting diode is soldered to the solder alloy layer and the electrical connection pad via the first metal solder layer and the second metal solder layer, and then packaged The circuit carrier. Specifically, in one aspect of the present invention, the solder alloy layer may be at least one selected from the group consisting of tin-silver alloy (Sn-Ag), tin-copper alloy (Sn-Cu), and tin-bismuth alloy (Sn-Bi). Ag-Cu, Ag-Bi, Sn-Ag-Cu, Sn-Ag-Bi, Sn-Ag-Sn-Cu -Bi), silver-copper-bismuth alloy (Ag-Cu-Bi), or tin-silver-copper-bismuth alloy (Sn-Ag-Cu-Bi).

In the manufacturing method of the flip-chip LED package module of the present invention, the circuit carrier may include an insulating layer and a circuit substrate, wherein the insulating layer may be made of insulating diamond-like carbon or aluminum oxide. , ceramic, diamond-containing epoxy resin, or a composition thereof, or a metal material having a surface covered with the above insulating layer, and the circuit substrate can be a metal plate or a ceramic plate Or a stack of substrates. In addition, the surface of the circuit carrier can also optionally include a type of drilled carbon layer to increase the heat dissipation effect.

In the manufacturing method of the flip-chip LED package module of the present invention, the flip-chip LED includes: a substrate having a first surface and a second surface opposite to the first surface a semiconductor epitaxial multilayer composite structure over the second surface of the substrate and including a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a blind via, wherein the first semiconductor epitaxial layer The layer is stacked on the second semiconductor epitaxial layer, and the blind via extends through the second semiconductor epitaxial layer; a first electrode is disposed above the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure; The first type of carbon/conductive material multilayer composite structure is filled in the blind hole of the semiconductor epitaxial multilayer composite structure and covers the first electrode, and is electrically connected to the semiconductor epitaxial multilayer composite structure. a second semiconductor epitaxial layer; a second electrode over the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure; a second type of carbon/conductive material multilayer composite structure located in the half a second semiconductor epitaxial layer over the second electrode of the bulk epitaxial multilayer structure and electrically connected to the semiconductor epitaxial multilayer composite structure; and an insulating protective layer covering the semiconductor epitaxial multilayer composite structure a sidewall of the semiconductor epitaxial layer and a sidewall of the second semiconductor epitaxial layer, and an inner wall surface of the blind via to isolate the first diamond-like carbon/conductive material multilayer composite structure and the second semiconductor epitaxial layer Contact between.

In the manufacturing method of the above-mentioned flip chip type LED package module, the method is electrically connected to the N-type semiconductor bar in the semiconductor epitaxial multilayer structure. The corresponding layer of the crystal layer and the P-type semiconductor epitaxial layer, and on its corresponding electrode are designed to be sputtered into a diamond-like carbon/conductive material multilayer composite structure. In other words, the corresponding N-type electrode disposed on the surface of the epitaxial layer of the N-type semiconductor can deposit a metal generally as an N-type electrode, deposit a diamond-like carbon, and selectively deposit a suitable conductive material layer and a diamond-like carbon layer. According to this, a multi-layer composite structure of a diamond-like carbon/conductive material is formed to serve as an N-type composite structure corresponding to the N-type electrode. Similarly, for the P-type semiconductor epitaxial layer, the metal generally used as the P-type electrode can be deposited first, and then the diamond-like carbon can be deposited, and the applicable conductive material layer and the diamond-like carbon layer can be selectively deposited repeatedly, thereby forming a diamond-like drill. A carbon/conductive material multilayer composite structure is used as a P-type composite structure corresponding to a P-type electrode.

The insulating protective layer is a stacked structure having different refractive index materials. When the light emitting diode is supplied with current, the electrons can be excited to form light, and the light is diffused toward the surface and the side surface of the light emitting diode. The light diffusing can be enhanced by reflecting the diffused side light to the light-emitting surface of the flip-chip light-emitting diode by an insulating protective layer.

The above-mentioned diamond-like carbon/conductive material multilayer composite structure can make the flip-chip light-emitting diode of the present invention have a buffering capacity for stress caused by a difference in thermal expansion coefficient. In other words, the above-mentioned diamond-like carbon/conductive material multi-layer composite structure can accelerate the heat loss in the process of generating heat of the light-emitting diode, even if part of the heat is not lost in the self-luminous diode, and the thermal expansion of the whole structure occurs, the diamond-like drilling The carbon/conductive material multilayer composite structure can also buffer the corresponding thermal stress, and can protect the remaining components of the flip-chip light-emitting diode from damage.

In summary, the manufacturing method of the flip-chip light-emitting diode package module used in the present invention can improve the overall output light rate of the flip-chip light-emitting diode and avoid the deterioration of the photoelectric characteristics of the component, thereby improving the reliability thereof. With life.

In the manufacturing method of the flip-chip LED package module of the present invention, the insulating protective layer is provided by stacking two or more different refractive index materials; wherein the different refractive index materials may be at least one selected from the group consisting of Drilling carbon (DLC), titanium oxide (Ti _x O _y ), cerium oxide (SiO ₂ ), tantalum nitride (SiN), gallium arsenide (GaAs), aluminum arsenide (AlAs), among which As the titanium oxide (Ti _x O _y ), for example, titanium oxide (TiO), titanium oxide (TiO ₂ ) or titanium oxide (Ti ₂ O ₃ ) or the like can be used; in the present invention, different refractive index materials in the insulating protective layer It can be periodically stacked and arranged to have the characteristics of a Bragg Reflector (DBR), and the light emitted to the side of the light-emitting diode can be reflected by the insulating protective layer to the flip-chip light-emitting diode. In addition, in the present invention, a metal protective layer may be disposed on the outer side of the insulating protective layer, and the metal protective layer may be at least one selected from the group consisting of aluminum (Al), titanium (Ti), and molybdenum. a group consisting of (Mo), nickel (Ni), silver (Ag), gold (Au), platinum (Pt), or alloys thereof Therefore, the metal protective layer can further increase the reflectance of the light emitted from the light-emitting diode to the side surface to the light-emitting surface of the flip-chip light-emitting diode, thereby further improving the output light rate.

Preferably, the second surface can be formed into a patterned surface by etching or development treatment, and the light-emitting diode can be effectively improved in light-emitting rate, and the polarization and the light field distribution can be controlled.

In addition, the first surface may be formed into a patterned surface or a roughened surface by etching or development treatment, and the light extraction rate of the light emitting diode may be effectively improved.

In the method for fabricating the flip-chip LED package of the present invention, the semiconductor epitaxial multilayer structure may further comprise an undoped semiconductor epitaxial layer, the undoped semiconductor epitaxial layer being sandwiched between Between the first semiconductor epitaxial layer and the second surface of the substrate; therefore, the undoped semiconductor epitaxial layer acts as a buffer layer between the first semiconductor epitaxial layer and the substrate, avoiding the first The degree of lattice mismatch between the epitaxial layer of the semiconductor and the substrate is excessively large, and the epitaxial defect density is excessively increased when the first semiconductor epitaxial layer is grown, and the flip-chip light-emitting diode can be avoided. There are cases of electrostatic discharge and current leakage.

In the method for fabricating the flip-chip light-emitting diode package module of the present invention, the semiconductor epitaxial multilayer composite structure may optionally further comprise an active intermediate layer, the active intermediate layer being sandwiched between the first semiconductor epitaxial layer Between the second semiconductor epitaxial layer and the second semiconductor. In addition, the blind via hole is disposed in the flip-chip light emitting diode structure of the present invention, and the blind via penetrates through the active intermediate layer. In the present invention, the active intermediate layer may be a multiple quantum well layer for improving the efficiency of converting electrical energy into light energy in the light-emitting diode.

Preferably, the first semiconductor epitaxial layer, the first electrode, and the first diamond-like carbon/conductive material multilayer composite structure are N-type, the second semiconductor epitaxial layer, the second electrode, and the second The diamond-like carbon/conductive material multilayer composite structure is P type. Wherein, the first type of carbon/conductive material multilayer composite structure, And the second type of carbon/conductive material multi-layer composite structure can select a free conductive material layer and a conductive carbon drill layer stack structure, a conductive material and a diamond-like carbon mixture multilayer structure, and a conductive material and a conductive diamond-like carbon mixture multilayer structure At least one of the grouped groups.

The conductive material layer or the conductive material may be selected from the group consisting of indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, titanium. (Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), silver (Ag), platinum (Pt), and gold (Au) At least one of the group groups. In other words, the conductive material layer or the metal may be composed of an alloy or a metal mixture of the above materials. Since the diamond-like carbon has a better coefficient of thermal expansion (CTE), the multi-layer composite structure of the drilled carbon/conductive material as an electrode can be used to buffer thermal expansion when the overall light-emitting diode is thermally expanded. The stress, so the overall structure of the light-emitting diode is not easily affected, and at the same time, the heat loss of the light-emitting diode during operation can be accelerated, and the possibility that the overall structure of the light-emitting diode is damaged by heat is reduced. For example, aluminum (Al), titanium (Ti), nickel (Ni), platinum (Pt), and gold (Au) may be used as the conductive material layer and laminated with the conductive diamond-like carbon layer. A multi-layer composite structure of a carbon/conductive material of the type described in the present invention is constructed.

In the manufacturing method of the flip-chip LED package module of the present invention, the surface of the first type of carbon/conductive material multilayer composite structure and the surface of the second type of carbon/conductive material multilayer composite structure may form a coplanar Or, the first type of conductive carbon-coated carbon layer table of multi-layer composite structure of carbon/conductive material The surface of the conductive diamond-like carbon layer of the second type of carbon/conductive material multilayer composite structure may form a coplanar surface; or the surface of the first type of carbon/conductive material multilayer composite structure and the second type of drill carbon / The surface of the multilayer composite structure of conductive material can form a coplanar plane.

In the manufacturing method of the flip-chip LED package module of the present invention, the method further includes: a first metal solder layer on the first type of carbon/conductive material multilayer composite structure; and a second metal The soldering layer is disposed on the second type of carbon/conductive material multilayer composite structure, wherein a surface of the second metal soldering layer forms a coplanar with a surface of the first metal soldering layer. The above-mentioned flip-chip light-emitting diode of the present invention, as the name implies, is flip-chip bonded to another circuit carrier, so that the surface of the P-type electrode and the N-type electrode of the final LED is used for bonding the metal solder layer. They usually form a coplanar plane with each other.

The method for manufacturing the flip-chip LED package module of the present invention may further include a reflective layer interposed between the semiconductor epitaxial multilayer composite structure and the second electrode, and the material of the reflective layer may be Indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, aluminum, silver, nickel (Ni), cobalt (Co), Pd, Pt, Pb, Au, Zinc, Sn, Sb, Pb, Cu, Cu, Cu ), its alloy, or a mixture of metals thereof. The above copper silver (CuAg) and nickel silver (NiAg) refer to a eutectic metal. In other words, it can also be a multi-layer metal structure, in addition to reaching the opposite In addition to the effect of the shot, the effect of forming an ohmic contact can also be achieved.

Furthermore, in order to avoid soldering the flip-chip light-emitting diode when manufacturing the flip-chip light-emitting diode package, the package defect occurs due to the offset of the flip-chip light-emitting diode. The method for fabricating the flip-chip LED package of the present invention, further comprising: providing a flux on the solder alloy layer before providing the flip-chip LED. In one aspect of the invention, the flux may be an organic compound flux to promote the wetting effect of the solder alloy used on the first metal solder layer and the second metal solder layer; and in another aspect The flux may be a highly adhesive resin flux to temporarily fix the flip-chip light-emitting diode on the solder alloy layer.

In the manufacturing method of the flip-chip light-emitting diode package module of the present invention, the method of electrically connecting is not particularly limited as long as it can firmly connect the flip-chip light-emitting diode to the circuit carrier. . In one embodiment of the present invention, the flip-chip light-emitting diode can be formed by fusing the first metal solder layer and the second metal solder layer independently of the solder alloy layer by a reflow process. A layer of the alloy is connected such that the flip-chip light-emitting diode is firmly and electrically connected to the circuit carrier.

In addition, another aspect of the present invention further provides a flip-chip LED package module manufactured by the method for manufacturing a flip-chip LED package module, comprising: a circuit carrier board, which includes at least An electrical connection pad; a flip-chip light-emitting diode comprising a first metal solder layer and a second metal solder layer, and the flip-chip light-emitting diode system comprises a solder alloy layer And a flux is electrically connected to the electrical connection pad and encapsulated on the circuit carrier, wherein the first metal solder layer and the second metal solder layer are each independently melted with the solder alloy layer to form a joint alloy Floor.

According to the present invention, the flip-chip light-emitting diode package module and the method of manufacturing the same according to the present invention use a metal with a lower cost to manufacture a metal solder layer for the purpose of reducing manufacturing cost, and the flip chip type used. The light-emitting diode has a structural design that buffers the difference in thermal expansion coefficient and increases the output light rate, and can continuously dissipate heat during the operation of the light-emitting diode to generate heat. Even if some of the heat is not dissipated in the self-luminous diode to promote thermal expansion of the overall structure, the multi-layer composite structure of the diamond-like carbon/conductive material disposed therein can also buffer the corresponding thermal stress, and the protection is not damaged, and can be insulated by The protective layer concentrates the beam to increase the output light rate.

The embodiments of the present invention are described by way of specific examples, and those skilled in the art can readily appreciate the other advantages and advantages of the present invention. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention.

The drawings in the embodiments of the present invention are simplified schematic diagrams. However, the drawings show only the components related to the present invention, and the components shown therein are not in actual implementation, and the number of components, the shape, and the like in actual implementation are a selective design, and the component layout thereof. The pattern may be more complicated.

Embodiment 1

First, please refer to FIG. 1A to FIG. 1H , which are schematic structural diagrams of a method for preparing a flip-chip light-emitting diode according to Embodiment 1 of the present invention. First, as shown in FIG. 1A, a substrate 20 is provided having a first surface 201 and a second surface 202 opposite to the first surface 201. Next, as shown in FIG. 1B, a semiconductor epitaxial multilayer composite structure 21 is formed over the second surface 202 of the substrate 20, wherein the semiconductor epitaxial multilayer composite structure 21 comprises an undoped semiconductor epitaxial layer 211, a first semiconductor epitaxial layer 212, an active intermediate layer 213, and a second semiconductor epitaxial layer 214, wherein the undoped semiconductor epitaxial layer 211, the first semiconductor epitaxial layer 212, and the active intermediate layer 213 is stacked on the second semiconductor epitaxial layer 214. The undoped semiconductor epitaxial layer 211 is interposed between the first semiconductor epitaxial layer 212 and the substrate 20, and the active intermediate layer 213 is sandwiched. The first semiconductor epitaxial layer 212 is disposed between the first semiconductor epitaxial layer 212 and the second semiconductor epitaxial layer 214. In this embodiment, the material of the semiconductor epitaxial multilayer composite structure 21 is gallium nitride (GaN), and the first semiconductor epitaxial layer 212 is N-type, and the second semiconductor epitaxial layer 214 is P-type. The undoped semiconductor epitaxial layer 211 serves as a buffer layer between the first semiconductor epitaxial layer 212 and the substrate 20 to avoid lattice mismatch between the first semiconductor epitaxial layer 212 and the substrate 20. The degree is too large, and when the first semiconductor epitaxial layer 212 is grown, the epitaxial defect density is excessively high, and the situation that the flip-chip emitting diode of the embodiment has electrostatic discharge and current leakage can be avoided. However, the material suitable for the semiconductor epitaxial multilayer composite structure of the present invention is not limited thereto, and other materials commonly used in the art may also be used. In addition, the active intermediate layer can be selected according to requirements. In this embodiment, the active intermediate layer 213 is a multi-quantum well layer for improving the efficiency of converting electrical energy into light energy in the light-emitting diode.

Referring to FIG. 1B, a reflective layer 22 is formed on the surface of the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer composite structure 21. In this embodiment, the reflective layer 22 may be selected from indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, aluminum, and silver. , nickel (Ni), cobalt (Co), palladium (Pd), platinum (Pt), gold (Au), zinc (Zn), tin (Sn), antimony (Sb), lead (Pb), copper (Cu) At least one of the group of copper-silver (CuAg) and nickel-silver (NiAg), in other words, it may be a multi-layer metal structure, in addition to achieving a reflection effect, an ohmic contact may also be formed. The utility. This step of forming a reflective layer can be selectively performed as desired by those skilled in the art to which the present invention pertains. In other words, if a reflective layer is not intended to be provided, the step of forming the reflective layer 22 can be skipped without being performed.

Then, referring to FIG. 1C, a blind via 23 is formed in the semiconductor epitaxial multilayer composite structure 21, wherein the blind via 23 penetrates the second semiconductor epitaxial layer 214, and the blind via 23 abuts the first semiconductor On the epitaxial layer 212. Next, referring to FIG. 1 , a second electrode 241 is formed over the second semiconductor epitaxial layer 214 . Referring to FIG. 1E , a first electrode 251 is formed in the blind via 23 , and the first electrode 251 is located on the first semiconductor epitaxial layer 212 of the semiconductor epitaxial multilayer composite structure 21 . In this embodiment, the material of the second electrode 241 and the first electrode 251 is a chromium/gold/platinum alloy, and the second electrode 241 is a P-type, and the first electrode 251 is an N-type.

Next, referring to FIG. 1F, an insulating protective layer 26 is formed covering the sidewall of the reflective layer 22, the sidewall of the second electrode 241 is exposed to a portion of the surface of the second electrode 241, and the semiconductor epitaxial multilayer composite structure 21 is covered. a sidewall of the first semiconductor epitaxial layer 212, a sidewall of the active intermediate layer 213, a sidewall of the second semiconductor epitaxial layer 214, and an inner wall surface of the blind via 23 and exposed by the blind via 23 The surface of the first electrode 251. The insulating protective layer 26 is a stacked structure having different reflective materials (described in FIG. 2A) for protecting the first semiconductor epitaxial layer 212, the second semiconductor epitaxial layer 214, and the The sidewall of the active intermediate layer 213 is insulated and the first electrode 251, the second semiconductor epitaxial layer 214, and the active intermediate layer 213 are directly in contact with another subsequently formed member.

Furthermore, as shown in FIG. 1G, a first type of carbon/conductive material multilayer composite structure 252 and a second type of carbon/conductive material multilayer composite are formed on the first electrode 251 and the second electrode 241, respectively. a structure 242, and the first type of drilled carbon/conductive material multilayer composite structure 252 is filled in the blind hole 23 of the inner wall surface covered with the insulating protective layer 26, and contacts the first electrode 251, so that the first type of drill The carbon/conductive material multilayer composite structure 252 forms a coplanar with the second type of carbon/conductive material multilayer composite structure 242. The first type of carbon/conductive material multilayer composite structure 252 and the second type of carbon/conductive material multilayer composite structure 242 may be selected from a conductive material layer and a conductive carbon drill layer stack structure, a conductive material and a diamond-like carbon mixture, And at least one of the group of the conductive material and the conductive diamond-like carbon mixture, wherein the conductive material layer or the conductive material is selected from the group consisting of indium tin oxide (ITO), aluminum oxide zinc ( Aluminum zinc oxide, AZO), Zinc oxide (ZnO), graphene, titanium (Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), silver (Ag At least one of the group of platinum, (Pt), and gold (Au). In this embodiment, the first type of carbon/conductive material multilayer composite structure 252 is a titanium conductive material layer, an aluminum conductive material layer and a diamond-like carbon layer repeatedly laminated structure, and the second type of carbon/conductive material multilayer composite structure The 242 series titanium conductive material layer and the diamond-like carbon layer are repeatedly laminated.

Finally, as shown in FIG. 1H, a first metal solder layer 29 is formed on the surface of the first type of carbon/conductive material multilayer composite structure 252 and the second type of carbon/conductive material multilayer composite structure 242, respectively. The second metal solder layer 28, wherein the surface of the first metal solder layer 29 and the surface of the second metal solder layer 28 form a coplanar plane. In the embodiment, the first metal solder layer 29 and the second metal solder layer 28 are made of gold (Au).

Accordingly, as shown in FIG. 1A to FIG. 1H, the above-mentioned flip-chip light-emitting diode comprises a substrate 20 having a first surface 201 and a second surface 202 opposite to the first surface 201. a semiconductor epitaxial multilayer composite structure 21 is disposed on the second surface 202 of the substrate 20, and the semiconductor epitaxial multilayer composite structure 21 includes an undoped semiconductor epitaxial layer 211, a first semiconductor epitaxial layer 212, An active intermediate layer 213 and a second semiconductor epitaxial layer 214, wherein the undoped semiconductor epitaxial layer 211, the first semiconductor epitaxial layer 212, the active intermediate layer 213, and the second semiconductor epitaxial layer The layer 214 is stacked, and the undoped semiconductor epitaxial layer 211 is sandwiched between the first semiconductor epitaxial layer 212 and the substrate 20, and the active intermediate layer 213 is sandwiched between the first semiconductor. Epitaxial layer 212 and the second semiconductor epitaxial Between the layers 214; a reflective layer 22 on the surface of the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer composite structure 21; a blind via 23 disposed in the semiconductor epitaxial multilayer composite structure 21 and extending through the a reflective layer 22, the second semiconductor epitaxial layer 214 and the active intermediate layer 213, and the blind via 23 is resisted on the first semiconductor epitaxial layer 212; a first electrode 251, the first electrode 251 is disposed On the blind via 23 of the semiconductor epitaxial multilayer composite structure 21, and above the first semiconductor epitaxial layer 212 of the semiconductor epitaxial multilayer composite structure 21; a first type of carbon/conductive material multilayer composite structure 252 is filled in the blind via 23 of the semiconductor epitaxial multilayer composite structure 21 and over the first electrode 251, and electrically connected to the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure 21 212; a first metal solder layer 29 on the first type of carbon/conductive material multilayer composite structure 252; a second electrode 241 located in the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer structure 21 Above and through the reflection 22 is electrically connected to the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer composite structure 21; a second type of carbon/conductive material multilayer composite structure 242 is located in the second of the semiconductor epitaxial multilayer composite structure 21 An electrode 241 is electrically connected to the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer composite structure 21; a second metal solder layer 28 is disposed on the second diamond-like carbon/conductive material multilayer composite structure 242; The surface of the second type of carbon/conductive material multilayer composite structure 242 forms a coplanar surface with the surface of the first type of carbon/conductive material multilayer composite structure 252, and the surface of the second metal solder layer 28 and the surface a surface of a metal solder layer 29 also forms a coplanar surface; and an insulating protective layer 26 that isolates the first electrode 251 and the second electrode covered by the insulating layer 241, the reflective layer 22, the first semiconductor epitaxial layer 212 and the sidewall of the second semiconductor epitaxial layer 214, and the inner wall surface of the blind via 23, and isolating the first diamond-like carbon/conductive material multilayer composite Direct contact between structure 252 and the second semiconductor epitaxial layer 214.

2A and 2B are schematic diagrams showing the side structure of a flip-chip type light emitting diode according to Embodiment 1 of the present invention. 2A is a side view of the embodiment of the present invention, which is taken from the portion A taken by the dotted line in FIG. 1H, and the insulating protective layer 26 is disposed on the outer side of the semiconductor epitaxial multilayer composite structure 21, which includes a first An insulating layer 261 and a second insulating layer 262, the first insulating layer 261 and the second insulating layer 262 are stacked; wherein the materials of the first insulating layer 261 and the second insulating layer 262 are respectively Different refractive index materials may be made, and at least one of different refractive index materials may be selected from the group consisting of diamond-like carbon (DLC), titanium oxide (Ti _x O _y ), cerium oxide (SiO ₂ ), and tantalum nitride (SiN). a group of gallium arsenide (GaAs) and aluminum arsenide (AlAs); the first insulating layer 261 and the second insulating layer 262 are periodically stacked periodically to have a Bragg reflector The light emitted from the surface of the flip-chip light-emitting diode of the present embodiment can be reflected by the insulating protective layer 26 to the light-emitting surface of the flip-chip light-emitting diode, thereby improving the output light rate. In this embodiment, the material of the first insulating layer 261 is cerium oxide (SiO2, refractive index: 1.55), and the material of the second insulating layer 262 is titanium dioxide (TiO ₂ , refractive index: 2.51), and the first An insulating layer 261 and the second insulating layer 262 are alternately formed into a 14-layer stacked structure.

2B is another schematic structural view of the present embodiment, except that the insulating protective layer 26 is disposed on the semiconductor epitaxial multilayer composite structure. A metal protective layer 27 is disposed on the outer side of the insulating protective layer 26, and the metal protective layer 27 can be at least one selected from the group consisting of aluminum (the outer side of the second insulating layer 261 and the second insulating layer 262). a group of Al), titanium (Ti), molybdenum (Mo), nickel (Ni), silver (Ag), gold (Au), platinum (Pt), or an alloy thereof, and thus, by the metal protective layer 27, the reflectance of the light emitted from the side of the flip-chip light-emitting diode of the embodiment to the light-emitting surface of the flip-chip light-emitting diode is further increased, thereby further improving the output light rate. In the present embodiment, the metal protective layer 27 is composed of silver (Ag, refractive index: 0.329).

Embodiment 2

Please refer to FIG. 3 , which is a schematic structural diagram of a flip-chip light-emitting diode according to Embodiment 2 of the present invention. As shown in FIG. 3 , the present embodiment is substantially the same as the flip-chip LED of the first embodiment, and includes a substrate 40 having a first surface 401 and a first surface 401 opposite to the first surface 401 . a second surface 402; a semiconductor epitaxial multilayer composite structure 41 on the second surface 402 of the substrate 40 and the semiconductor epitaxial multilayer composite structure 41 includes an undoped semiconductor epitaxial layer 411, a first semiconductor a seed layer 412, an active intermediate layer 413, and a second semiconductor epitaxial layer 414, wherein the undoped semiconductor epitaxial layer 411, the first semiconductor epitaxial layer 412, the active intermediate layer 413, and the first The two semiconductor epitaxial layers 414 are stacked, and the undoped semiconductor epitaxial layer 411 is interposed between the first semiconductor epitaxial layer 412 and the substrate 40, and the active intermediate layer 413 is interposed. Between the first semiconductor epitaxial layer 412 and the second semiconductor epitaxial layer 414; a reflective layer 42 on the surface of the second semiconductor epitaxial layer 414 of the semiconductor epitaxial multilayer composite structure 41; a blind via 43 The semiconductor epitaxial multilayer composite structure 41, and penetrate the reflective layer 42, the second semiconductor epitaxial layer 414 and the active intermediate layer 413, and the blind via 43 is resisted on the first semiconductor epitaxial layer 412; a first electrode 451, the The first electrode 451 is disposed on the blind via 43 of the semiconductor epitaxial multilayer composite structure 41, and is disposed above the first semiconductor epitaxial layer 412 of the semiconductor epitaxial multilayer composite structure 41; The electrically conductive material multilayer composite structure 452 is filled in the blind via 43 of the semiconductor epitaxial multilayer composite structure 41 and covers the first electrode 451 and electrically connected to the semiconductor epitaxial multilayer composite structure 41. a first semiconductor epitaxial layer 412; a first metal solder layer 49 on the first diamond-like carbon/conductive material multilayer composite structure 452; a second electrode 441 located in the semiconductor epitaxial multilayer composite structure 41 The second semiconductor epitaxial layer 414 is electrically connected to the semiconductor epitaxial multilayer structure 41 via the reflective layer 42; a second type of carbon/conductive material multilayer composite structure 442 is used. Located in the semiconductor epitaxial Above the second electrode 441 of the layer composite structure 41, and electrically connected to the second semiconductor epitaxial layer 414 of the semiconductor epitaxial multilayer composite structure 41; a second metal solder layer 48 located in the second diamond-like carbon/ a conductive material multilayer composite structure 442; wherein a surface of the second diamond-like carbon/conductive material multilayer composite structure 442 forms a coplanar surface with a surface of the first diamond-like carbon/conductive material multilayer composite structure 452, and the second metal The surface of the solder layer 48 and the surface of the first metal solder layer 49 also form a coplanar surface; and an insulating protective layer 46 that isolates the first electrode 451, the second electrode 441, the reflective layer 42, and the a sidewall of the first semiconductor epitaxial layer 412 and the second semiconductor epitaxial layer 414, and an inner wall surface of the blind via 43 and isolating the first diamond-like carbon/conductive material multilayer The direct contact between the composite structure 452 and the second semiconductor epitaxial layer 414; however, unlike the structure of the first embodiment, in the embodiment, the first surface 401 of the substrate 40 can be processed by an etching process. Forming a roughened surface, on the other hand, the second surface 402 of the substrate 40 can form a patterned surface by a lithography, thereby effectively improving the light-emitting rate of the flip-chip light-emitting diode of the present invention, and The flip-flop and the light field distribution of the flip-chip light-emitting diode of the present embodiment can be controlled.

Embodiment 3

Referring to FIG. 4, it is a schematic structural diagram of a flip-chip LED package module according to Embodiment 3 of the present invention. As shown in FIG. 4, the flip-chip LED package module includes: a circuit carrier 6; and the flip-chip LED 2 obtained in the first embodiment, which is soldered through the first metal. The layer 29 and the second metal solder layer 28 are electrically connected to the circuit carrier 6. The circuit carrier 6 includes an insulating layer 61, a circuit substrate 60, and an electrical connection pad 63. The material of the insulating layer 61 can be The diamond-like carbon, alumina, ceramic, diamond-containing epoxy resin, or a mixture of the above materials is selected, and the circuit substrate 60 is a metal plate, a ceramic plate or a substrate.

In the flip-chip type LED package module, a tin-silver alloy (Sn-Ag) provided on the surface of the electrical connection pad 63 as a solder alloy layer 62 can be processed by a flip-chip furnace through a flip chip method. The first metal solder layer 29 and the second metal solder layer 28 are each independently melted with a tin-silver alloy (Sn-Ag) of the solder alloy layer 62 to form a joint alloy layer (not shown) to enhance The melting point further enables the flip-chip light-emitting diode to be electrically connected to the electrical connection pad 63 of the circuit carrier 6 . In this embodiment, the flip chip type Before the flip-chip process, the photodiode 2 further includes a rosin flux as a resin flux (not shown) on the solder alloy layer 62, so that the flip-chip LED 2 can be fixed. On the electrical connection pad 63, it does not slip off.

Embodiment 4

FIG. 5 is a schematic structural diagram of a flip-chip LED package module according to Embodiment 4 of the present invention. As shown in FIG. 5, the flip-chip LED package module includes: a circuit carrier 6; and the flip-chip LED 4 obtained in the second embodiment, which is soldered through the first metal. The layer 49 and the second metal solder layer 48 are electrically connected to the circuit carrier 6. The circuit carrier 6 includes an insulating layer 61, a circuit substrate 60, and an electrical connection pad 63. The material of the insulating layer 61 can be The diamond-like carbon, alumina, ceramic, diamond-containing epoxy resin, or a mixture of the above materials is selected, and the circuit substrate 60 is a metal plate, a ceramic plate or a substrate.

In the flip-chip type LED package module, a tin-silver-copper alloy (Sn-Ag-Cu) provided on the surface of the electrical connection pad 63 as a solder alloy layer 62 can be used for reflow soldering through a flip chip method. Furnace treatment, the first metal solder layer 49 and the second metal solder layer 48 are each independently melted with a tin-silver-copper alloy (Sn-Ag-Cu) of the solder alloy layer 62 to form a joint alloy layer (Fig. In order to increase the melting point thereof, the flip-chip light-emitting diode is stably electrically connected to the electrical connection pad 63 of the circuit carrier 6. In the present embodiment, the flip-chip LED 4 is further provided with a K-103 as an organic compound flux (not shown) on the solder and gold layer 62 before the flip chip process. Purchased from Taiwan Solid Products Co., Ltd. to promote the use of tin silver The wetting effect of the copper alloy on the first metal weld layer and the second metal weld layer.

In summary, the method for manufacturing a flip-chip LED package of the present invention has a lower transmission cost than a gold-tin alloy as a metal solder layer, and is matched with at least two of tin, silver, and copper. The alloy is composed of the flip-chip light-emitting diode of the present invention to be electrically connected to the electrical connection pad and packaged on the circuit carrier. In addition, the flip-chip light-emitting diode of the present invention has a structural design of a coefficient thermal expansion mismatch and a concentrated light output, and can continuously dissipate heat during the operation of the light-emitting diode to generate heat. Even if some of the heat is not dissipated in the self-luminous diode to promote thermal expansion of the overall structure, the multi-layer composite structure of the diamond-like carbon/conductive material disposed therein can buffer the corresponding thermal stress, and the protection is not damaged, and the beam can be concentrated. Glow out the light and increase the light rate.

Accordingly, the flip-chip light-emitting diode package module manufactured by the method for manufacturing the flip-chip light-emitting diode package module of the present invention is not only low in cost, but also has the above-mentioned super-heat-dissipating effect. Diode.

The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

2, 4‧‧‧ flip-chip light-emitting diode

20, 40‧‧‧ substrate

201, 401‧‧‧ first surface

202, 402‧‧‧ second surface

21, 41‧‧‧Semiconductor epitaxial multilayer composite structure

211, 411‧‧‧ undoped semiconductor epitaxial layer

212, 412‧‧‧ first semiconductor epitaxial layer

213, 413‧‧‧ active intermediate layer

214, 414‧‧‧Second semiconductor epitaxial layer

22, 42‧‧‧reflective layer

23, 43‧‧ ‧ blind holes

2411, 441‧‧‧ second electrode

242, 442‧‧‧Second type of carbon/conductive material multilayer composite structure

251, ‧‧‧‧first electrode

251, ‧‧‧‧first electrode

252, 452‧‧‧First class of carbon/conductive material multilayer composite structures

26, 46‧‧‧Insulating protective layer

261‧‧‧First insulation

262‧‧‧Second insulation

27‧‧‧Metal protective layer

28, 48‧‧‧Second metal welding layer

29, 49‧‧‧First metal welding layer

6‧‧‧Circuit carrier board

60‧‧‧ circuit board

61‧‧‧Insulation

62‧‧‧ solder alloy layer

63‧‧‧Electrical connection pads

1A to FIG. 1H are schematic structural diagrams showing a method for preparing a flip-chip light-emitting diode according to Embodiment 1 of the present invention.

2A and 2B are schematic diagrams showing the side structure of a flip-chip type light emitting diode according to Embodiment 1 of the present invention.

3 is a schematic structural view of a flip-chip type light emitting diode according to Embodiment 2 of the present invention.

4 is a schematic structural view of a flip-chip type light emitting diode package module according to Embodiment 3 of the present invention.

FIG. 5 is a schematic structural view of a flip-chip LED package module according to Embodiment 4 of the present invention.

2‧‧‧Flip-chip light-emitting diode

28‧‧‧Second metal soldering layer

29‧‧‧First metal soldering layer

6‧‧‧Circuit carrier board

60‧‧‧ circuit board

61‧‧‧Insulation

62‧‧‧ solder alloy layer

63‧‧‧Electrical connection pads

Claims (23)

A method for manufacturing a flip-chip light-emitting diode package module, comprising: providing a circuit carrier board comprising at least one electrical connection pad; and disposing a solder alloy layer on the electrical connection pad, wherein the solder alloy At least one layer selected from the group consisting of tin (Sn), silver (Ag), copper (Cu), bismuth (Bi), or an alloy thereof; providing a flip-chip light-emitting diode comprising a first metal solder a layer and a second metal soldering layer; and soldering the flip-chip light emitting diode to the electrical connection pad via the first metal solder layer and the second metal solder layer, and then packaged on the circuit carrier board; The first metal solder layer and the second metal solder layer are composed of gold (Au), tin (Sn), silver (Ag), or copper (Cu); wherein, a flip-chip light emitting diode is provided Before the body, the method further comprises: providing a flux on the solder alloy layer. The method for manufacturing a flip-chip type LED package module according to claim 1, wherein the circuit carrier comprises an insulating layer and a circuit substrate, wherein the insulating layer is made of at least one selected from the group consisting of Groups of diamond-like carbon, alumina, ceramic, and diamond-containing epoxy resins. The method of manufacturing a flip-chip type LED package module according to claim 2, wherein the circuit substrate is a metal plate, a ceramic plate or a substrate. The method for manufacturing a flip-chip type light emitting diode package module according to claim 1, wherein the solder alloy is at least one selected from the group consisting of tin-silver alloy (Sn-Ag) and tin-copper alloy (Sn-Cu). ), tin-bismuth alloy (Sn-Bi), silver-copper alloy (Ag-Cu), silver-antimony alloy (Ag-Bi), tin-silver-copper alloy (Sn-Ag-Cu), tin-silver-bismuth alloy (Sn-Ag- Bi), tin-copper-bismuth alloy (Sn-Cu-Bi), silver-copper-bismuth alloy (Ag-Cu-Bi), or tin-silver-copper-bismuth alloy (Sn-Ag-Cu-Bi). The method for manufacturing a flip-chip type light emitting diode package according to the first aspect of the invention, wherein the flip chip type light emitting diode comprises: a substrate having a first surface and a relative a second surface of the first surface; a semiconductor epitaxial multilayer composite structure over the second surface of the substrate and comprising a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a blind via, wherein The first semiconductor epitaxial layer and the second semiconductor epitaxial layer are stacked, and the blind via extends through the second semiconductor epitaxial layer; a first electrode is located in the first semiconductor of the semiconductor epitaxial multilayer composite structure Above the epitaxial layer; a first type of carbon/conductive material multilayer composite structure is filled in the blind hole of the semiconductor epitaxial multilayer composite structure, and covers the first electrode, and is electrically connected to the semiconductor beam a first semiconductor epitaxial layer of a crystalline multilayer composite structure; a second electrode over the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure; and a second type of carbon/conductive material multilayer Laminated structure located above the second electrode of the semiconductor epitaxial multilayer composite structures, and electrically connected to the second semiconductor epitaxial layer of the epitaxial semiconductor multilayer composite structure. The method for manufacturing a flip-chip type light emitting diode package according to claim 5, wherein the flip chip type light emitting diode further comprises a An insulating protective layer covering sidewalls of the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure and sidewalls of the second semiconductor epitaxial layer, and an inner wall surface of the blind via to isolate the first type of drill Contact between the carbon/conductive material multilayer composite structure and the second semiconductor epitaxial layer. The method for manufacturing a flip-chip type LED package module according to claim 6, wherein the insulating protective layer is provided by stacking two or more different refractive index materials. The method for manufacturing a flip-chip LED package according to claim 7, wherein the different refractive index materials are at least one selected from the group consisting of insulated carbon (Isolated DLC) and titanium oxide (Ti _x ). O _y ), a group consisting of SiO2, GaAs, and AlAs. The method for manufacturing a flip-chip type light emitting diode package according to claim 6, wherein the flip chip type light emitting diode further comprises a metal protective layer disposed on an outer side of the insulating protective layer. The method for manufacturing a flip-chip type light emitting diode package according to claim 9, wherein the metal protective layer is at least one selected from the group consisting of aluminum (Al), titanium (Ti), and molybdenum (Mo). A group consisting of nickel (Ni), silver (Ag), gold (Au), platinum (Pt), or alloys thereof. The method of manufacturing a flip-chip LED package according to claim 5, wherein the second surface is a patterned surface. The method of manufacturing a flip-chip LED package according to claim 5, wherein the first surface is a patterned surface or a roughened surface. The method for manufacturing a flip-chip LED package according to claim 5, wherein the semiconductor epitaxial multilayer structure further comprises an undoped semiconductor epitaxial layer, the undoped semiconductor A seed layer is interposed between the first semiconductor epitaxial layer and the second surface of the substrate. The method for manufacturing a flip-chip light-emitting diode package according to claim 5, wherein the semiconductor epitaxial multilayer structure further comprises an active intermediate layer, the active intermediate layer being sandwiched between the first semiconductor Between the epitaxial layer and the second semiconductor epitaxial layer. The method for manufacturing a flip-chip LED package according to claim 5, wherein the first type of carbon/conductive material multilayer composite structure and the second type of carbon/conductive material multilayer The composite structure is selected from at least one of the group consisting of a conductive material layer and a conductive carbon-drilled layer stack structure, a conductive material and a diamond-like carbon mixture multilayer structure, and a conductive material and a conductive diamond-like carbon mixture multilayer structure. The method for manufacturing a flip-chip type light emitting diode package according to claim 15, wherein the conductive material layer or the conductive material is selected from the group consisting of indium tin oxide (ITO). , aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, titanium (Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum At least one of the group consisting of (Mo), tungsten (W), silver (Ag), platinum (Pt), and gold (Au). The method for manufacturing a flip-chip LED package according to claim 5, wherein the first type of carbon/conductive material is multi-layered The surface of the composite structure forms a coplanar surface with the surface of the second type of carbon/conductive material multilayer composite structure. The method of manufacturing a flip-chip LED package according to claim 1, wherein the first metal solder layer is disposed on the first type of carbon/conductive material multilayer composite structure; The second metal soldering layer is disposed on the second diamond-like carbon/conductive material multilayer composite structure, and a surface of the second metal soldering layer and the surface of the first metal soldering layer form a coplanar plane. The method for manufacturing a flip-chip type LED package module according to claim 5, further comprising a reflective layer sandwiched between the semiconductor epitaxial multilayer composite structure and the second electrode. The method for manufacturing a flip-chip LED package according to claim 5, wherein the first semiconductor epitaxial layer, the first electrode, and the first diamond-like carbon/conductive material multilayer composite The structure is N-type, the second semiconductor epitaxial layer, the second electrode, and the second diamond-like carbon/conductive material multilayer composite structure are P-type. The method for manufacturing a flip-chip type light emitting diode package according to claim 1, wherein the flux is an organic compound flux or a resin flux. The method for manufacturing a flip-chip type light emitting diode package according to claim 1, wherein the first metal solder layer and the second metal solder layer are independently connected to the solder alloy layer. The welding process melts to form a joint alloy layer. A flip-chip LED package module manufactured by the method for manufacturing a flip-chip type LED package module according to any one of claims 1 to 22, comprising: a circuit carrier board, including At least one electrical connection pad; a flip-chip light-emitting diode comprising a first metal solder layer and a second metal solder layer, and the flip-chip light-emitting diode system is provided by a solder alloy layer and a helper The solder is electrically connected to the electrical connection pad and encapsulated on the circuit carrier, wherein the first metal solder layer and the second metal solder layer are each independently melted with the solder alloy layer to form a joint alloy layer.