CN105047788B - A kind of membrane structure LED chip based on silver-base metal bonding and preparation method thereof - Google Patents
A kind of membrane structure LED chip based on silver-base metal bonding and preparation method thereof Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of membrane structure LED chip based on silver-base metal bonding and preparation method thereof.Reduced present invention employs AgCuIn alloys as bonding metal layer, bonding temperature with the retention time；AgCuIn bondings can be completed under relatively low bonding temperature and bonding pressure, and bonding time shortens, and advantageously reduces damage of the bonding process to the photoelectric properties of LED epitaxial layers；Using the bonding metal layer of AgCuIn alloys, the cavitation in bonding process is eliminated, is advantageous to the stress release to LED epitaxial layers；AgCuIn bonding mechanical performances are high, have good conduction and heat conductivility, are advantageous to improve the life-span of LED chip；Also, using AgCuIn as bond wire, the manufacturing cost of light emitting diode (LED) chip with vertical structure is greatly reduced, is advantageous to the marketing development of light emitting diode (LED) chip with vertical structure.
Description
Technical field
The present invention relates to membrane structure LED chip, more particularly to a kind of membrane structure LED core based on silver-base metal bonding
Piece and preparation method thereof.
Background technology
GaN base power-type membrane structure LED based on laser lift-off and bonding techniques is in high-power illumination
Field has very wide application prospect.The committed step of the program is to prepare the GaN epitaxial layer of grown on sapphire
After the structure of the p faces such as good p-electrode, it is bonded on the transfer substrate of the conductive and heat-conductives such as Si or Cu, is then gone using laser lift-off technique
Except the sapphire as growth substrates, and on the N polar GaNs surface exposed, surface coarsening is carried out, then prepares n-electrode.Bonding
Technology needs to realize high bond strength to ensure yield rate, it is necessary to have good conductive and heat-conductive ability to reduce resistance, improve and manage
The core life-span；Last bonding techniques will typically realize certain stress release.In bonding process, the direct shadow of selection of bonding medium
Ring above-mentioned performance simultaneously and then influence membrane structure LED performance.
AuSn bondings are bonding methods common in power-type membrane structure LED preparation technologies.AuSn bonding techniques are general
Using the gold-tin alloy preformed sheet of eutectic as dielectric layer, epitaxial layer and transfer are served as a contrast in the range of 300~500 DEG C
Bottom is bonded together.AuSn bonding have the advantages that high mechanical strength, wellability it is good, beneficial to thermal conductivity.On the other hand, due to
AuSn bondings are based on liquid-solid-phase changeable, have two kinds of stable phases of δ phases and ζ phases during solid-state, the diffusion during liquid-solid-phase changeable it is random
Property result in unordered and uncontrollable (Mat.Sci.Eng.B, 175,213, (the 2010)) stress build up of distributed mutually, it is strong to influence bonding
Degree, the thermal conductivity and conductance of bonding metal layer, the AuSn melted under stress can overflow to surrounding, be unfavorable for subsequent technique.
Common technology means in Au-Au bondings and power-type membrane structure LED preparations.From different, the Au- of AuSn bondings
Au bondings need not be similar to gold-tin alloy as preformed sheet, but 1 is deposited respectively in epitaxial layer and transfer substrate surface
~3 μm of Au, about 300 DEG C of bonding temperature, slightly below AuSn bondings, but bonding pressure is bonded three orders of magnitude (about more than AuSn
6000~8000kgf/wafer), using Au atoms or crystal grain, contact interface thermal diffusion is closely bonded again.This method work
Skill is simpler, is adapted to large-scale industrial production.It is disadvantageous in that, it is necessary to the long period be kept at high temperature under high pressure, to protect
It is fully complete to demonstrate,prove the counterdiffusion of metal interface, result in opto-electronic device performance reduces (IEEE Transactions on
Electronics Packaging Manufacturing,31(2):159(2008)).Finally, due to Au's is expensive,
Au-Au is bonded the manufacturing cost for adding power-type membrane structure LED.
Silver-base solder is to use most wide a kind of hard solder.Its fusing point is moderate, can infiltrate many metals, has well strong
Degree, plasticity, conduction and thermal conductivity.It is power and SnAgCu, SnAg have more preferable heat conduction, electric conductivity compared to Ag conductive rubbers
More a kind of solder is used in type LED encapsulation.But the bonding in epitaxial layer is rarely employed.Braunschweig, Germany University of Science and Technology
Professor Waag also has the encapsulation (IEEE that the method sintered using nanometer and micron Ag particles carries out power-type LED
TRANSACTIONS ON COMPONENTS,PACKAGING AND MANUFACTURING TECHNOLOGY,2(2)：199
(2012)).Due to LED packaging technologies, Ag Base Metal melting temperatures are generally below 300 DEG C, after substrate desquamation
Vertical thin-film structure LED is difficult the technique for carrying out nitrogen face contact, while relatively low alloy melting point also brings along functional reliability
Decline.Although the bonding of micro-nano Ag particles may solve the above problems, it has been reported that on chip bonding, in extension
Do not reported in layer bonding.
The content of the invention
In order to solve the problems, such as to be bonded cost and reliability, the invention provides the membrane structure LED of silver-base metal bonding
Chip and preparation method thereof, the preparation for power-type membrane structure LED chip.
It is an object of the present invention to provide a kind of membrane structure LED chip based on silver-base metal bonding.
The membrane structure LED chip of the present invention is based on the light emitting diode (LED) chip with vertical structure being bonded with laser lift-off, or upside-down mounting
Structure LED chip.
For light emitting diode (LED) chip with vertical structure, the membrane structure LED core blade unit bag of the invention based on silver-base metal bonding
Include：Transfer substrate, bonding metal layer, transition zone, reflecting layer, p-electrode, LED epitaxial layers, n-electrode, n faces go out light cone and passivation layer；
Wherein, bonding metal layer, transition zone, reflecting layer, p-electrode and LED epitaxial layers are sequentially consisted of on transfer substrate；
N-electrode is formed in the sub-fraction of LED epitaxial layers；N faces light extraction is formed in part of the surface of LED epitaxial layers in addition to n-electrode
Cone；Reflecting layer and n faces go out light cone and form light emitting structures；Laser road plan between chip unit is formed with etching the side wall in aisle
Passivation layer；Bonding metal layer uses AgCuIn alloys.
AgCuIn is the ternary alloy three-partalloy of cupric and indium, has good welding performance, relatively low vapour pressure.Have
The models such as AgCuln30-5, AgCuIn24-15, AgCuln85-5, AgCuIn20-31 and AgCuln27-10.Their fusing temperature
Degree is followed successively by 770~800 DEG C, 630~705 DEG C, 900~950 DEG C, 540~575 DEG C and 685~730 DEG C.Its melting temperature is big
In the technological temperature of n faces contact, coordinate low temperature, the bonding technology of elevated pressures, can be used for the true of power-type membrane structure LED
Empty bond wire.
The light emitting diode (LED) chip with vertical structure of the present invention be nitrogen face light extraction, LED epitaxial layers from top to bottom successively including n-contact layer,
N-layer, MQW, p-type layer and P type contact layer；N-electrode is formed in the sub-fraction of n-contact layer；It is roughened n-type contact
Part of the surface of layer in addition to n-electrode forms n faces and goes out light cone.The thickness of LED epitaxial layers is between 2~100 μm.Further,
Current extending is added between n-contact layer and n-layer, the thickness of current extending is determined by the thickness of whole LED epitaxial layers
It is fixed, between 10~80 μm.
Further, light emitting structures also include metal Nano structure, and the metal Nano structure of periodic arrangement is embedded in outside LED
In the middle p-type layer and P type contact layer of prolonging layer.Metal Nano structure includes nano-pore, metal nanoparticle and medium covering；Its
In, nano-pore is formed in p-type layer and P type contact layer；The metal nanoparticle for being wrapped in medium covering is located in nano-pore.
N-electrode utilizes the relatively low metal work function of PdIn alloys using palladium Pd, indium In, nickel and golden Au metal structure
And the stability of high temperature, the diffusion of Ga atoms is prevented, significantly improves the performance of nitrogen face Ohmic contact.So n-electrode of shape
The current expansion characteristic of chip is can effectively improve, improves device light efficiency and reliability.P-electrode uses transparent indium tin oxide
ITO。
For inverted structure LED chip, the membrane structure LED core blade unit bag of the invention based on silver-base metal bonding
Include：LED epitaxial layers, n-electrode, p-electrode, reflecting layer, bonding metal layer, passivation layer and transfer substrate；Wherein, LED epitaxial layers from
It is small supreme to include n-contact layer, multiquantum well region and P type contact layer successively；Expose a part of n-type contact using the method for etching
Layer, n-electrode is prepared in the n-contact layer exposed；P-electrode is prepared in P type contact layer, reflecting layer is prepared in p-electrode；Passivation
Layer is wrapped in around the side wall and n-electrode of LED epitaxial layers, prevents from leaking electricity；Bonding metal layer is deposited on reflecting layer；Bonding gold
Belong to layer by LED epitaxial layers and shift substrate bonding together with.
In the AgCuIn alloys that bonding metal layer uses, Ag component between 40~50%, Cu component 40~
Between 50%, In component is between 10~20%.
It is another object of the present invention to provide a kind of preparation of the membrane structure LED chip based on silver-base metal bonding
Method.
For light emitting diode (LED) chip with vertical structure, the system of the membrane structure LED core blade unit of the invention based on silver-base metal bonding
Preparation Method, comprise the following steps：
1) growth substrates for being adapted to laser lift-off are provided, non-doped gan layer is grown in growth substrates, mixes GaN non-
Growing n-type contact layer, n-layer, MQW, p-type layer and P type contact layer successively on layer, form LED epitaxial layers；
2) the LED core blade unit of separation is marked off using laser scribing on LED epitaxial layers, deeply to growth substrates, shape
Into laser road plan, laser road plan is cleaned, removes the residue in sidewall damage area and laser road plan；
3) one layer of mask layer is grown on LED epitaxial layers, LED core blade unit is etched on mask layer, is etched to n-layer,
Etching aisle is formed, mask layer is removed and exposes P type contact layer, further remove etching injury, then remove mask layer；
4) the regrowth passivation material on LED epitaxial layers, figure is prepared using the method for photoetching and carries out wet method corruption
Erosion, the passivation material on P type contact layer surface is removed, retain laser road plan and etch the passivation material of aisle side wall, formed
Passivation layer；5) p-electrode is deposited on the surface of P type contact layer, reflecting layer and transition zone then is deposited on the surface of p-electrode；
6) by the way of electron beam evaporation, bond wire is deposited simultaneously on the surface of transition zone and transfer substrate, is bonded
The material of metal uses AgCuIn alloys, and then para-linkage metal carries out thermal annealing；
7) the transfer substrate that bond wire has been deposited is anchored to be formed on the LED epitaxial layers in growth substrates, in high temperature
Under high pressure, transfer substrate is bonded together with LED epitaxial layers, the bonding gold on the bond wire on transition zone and transfer substrate
Category is fused into one layer of bonding metal layer；
8) growth substrates are removed using laser-stripping method, and exposes non-doped gan layer, the LED epitaxial layers of clean stripping
Surface；
9) wet method and dry etching are carried out, is gone unless doped gan layer, exposes n-contact layer, and cause laser road plan
Expand, discharge portion of residual stress；
10) metal of evaporating n electrode, part metals are removed using stripping means, exposes most n-contact layer, shape
Into n-electrode, the Ohmic contact stablized of annealing；
11) passivation protection of electrode and side wall is carried out, is roughened the surface of n-contact layer, forms cycle or aperiodic n faces
Go out light cone, so as to form the light emitting structures for going out light cone including reflecting layer and n faces；
12) with machinery or laser cutting LED epitaxial layers, test and sort to obtain LED core blade unit.
Wherein, in step 1), the thickness of LED epitaxial layers is between 2~100 μm.The GaN carriers of n-contact layer are dense
Degree reaches 1019cm-3, thickness is between 1~2 μm.Current extending can also be added between n-contact layer and n-layer, it is thick
Degree is determined by the thickness of whole LED epitaxial layers, between 10~80 μm.The carrier concentration of current extending is 1017cm-3~
1018cm-3, the series resistance for selecting to consider simultaneously lateral current and longitudinal direction of parameter.The optimization of MQW is carried out, it is more
The cycle of SQW and the wide size, shape and position depending on metal nanoparticle of trap, it is ensured that surface phasmon excites more
SQW obtains luminescence enhancement.P type contact layer is typically mixed or n-type InGaN using the non-of 1~5nm, forms the tunnel with p-GaN layer
Road knot.
In step 2), using laser scribing, the LED core blade unit of separation is divided on LED epitaxial layers, laser road plan
Depth is goed deep into growth substrates more than the thickness of LED epitaxial layers, then removes the damage of side wall using wet etching and reaches thick
The purpose of change.Scribing using plasma enhancing chemical vapour deposition technique PECVD growths SiO2As protective layer, and spin coating laser
The protection liquid of scribing, reduce laser scribing and damaged to caused by LED epitaxial layers；On the other hand, cleaned in following high-temperature acid
Cheng Zhong, play a part of protecting LED epitaxial layers.The side wall of laser road plan and the inclination angle of growth substrates are between 70~85 °, laser
The width of road plan is between 10~50 μm；The wet etching condition used is phosphoric acid and the mixed acid of sulfuric acid, and corrosion temperature is 200
Between~250 DEG C, etching time is related to the thickness of LED epitaxial layers, removes residue caused by laser scribing.Side wall corrosion cone
Size between 100nm~10 μm.The present invention splits chip unit using laser scribing and mixed acid corrosion side wall, effectively
Reduce the warpage in epitaxial layer.The corrosion of side wall simultaneously forms side wall roughening, is advantageous to the outgoing of ambient light.
In step 3), exposed on mask layer and obtain the mask of photoresist.It is fluorine-based using inductively coupled plasma ICP
Mask layer in reacting gas etching, further etch to form etching aisle using chloro reacting gas, while further remove and swash
The damaging layer of the side wall of light road plan.The etching depth in aisle is etched between 0.5 μm~5 μm.Remove the mask layer of residual.
In step 4), the thickness of passivation material removes P type contact layer surface between 300~500nm, in photoetching
After passivation material, in the edge of P type contact layer, retain apart from some passivation material in 10 μm of edge, formed
Passivation layer, preferably to realize that side wall is protected.
In step 5), p-electrode is transparent conductive electrode, and using indium tin oxygen ITO, thickness lights between 100~400nm
The thickness of wavelength, ITO thickness and p-type layer optimizes jointly, is formed and increases minus effect.Reflecting layer uses Al bases reflecting electrode or Ag
Base reflecting electrode.Al bases reflecting electrode is TiAl or NiAl, and wherein titanium Ti and nickel are viscous glutinous metal, thickness 1~2nm it
Between, Al thickness is between 20~50nm.Stability at a temperature of being would be beneficial for using Al base reflecting electrodes compared with high technology is such as high
Warm, high pressure bonding etc..Ag bases reflecting electrode is to increase reflectivity and stability.The metal of transition zone is nickel, platinum or palladium etc., thick
Degree is between 20~50nm.
In step 6), bond wire is AgCuIn alloys, in order to ensure the uniformity of AgCuIn alloy compositions, is employed
Following steps：A) AgCuIn alloy of a layer thickness between 400~500nm is deposited with constant 0.4~0.5nm/s speed；
B) AgCuIn alloy of a layer thickness between 500~1000nm is deposited with constant 8~12nm/s speed again；C) by 1~
Behind 5min intervals, repeat step b).After the evaporation for completing AgCuIn alloys, using 20~30min under 200~300 DEG C of blanket of nitrogen
Annealing, ensure alloy compositions it is uniform.The thickness of AgCuIn alloys can ensure that bonding metal layer is endured between 1.5~2 μm
More than 500 DEG C of chip technology temperature.
In step 7), transfer substrate uses semiconductor wafer or metal.Transfer substrate includes Semiconductor substrate and p-electrode
Layer, in its front deposition bond wire.Bonding process is typically carried out step by step, and specific steps include：A) 800 are boosted to~
Between 1000kgf/wafer, temperature is risen between 80~120 DEG C, and the retention time is between 1~3min；B) 4000 are boosted to~
Between 5000kgf/wafer, temperature is risen between 200~300 DEG C, and the retention time is between 1~3min；C) pressure is kept not
Become, temperature is risen between 300~500 DEG C, and the retention time is between 10~30min；D) holding pressure is constant, and temperature is down to 200
Between~300 DEG C, the retention time is between 1~3min；E) keep that pressure is constant, and temperature is down between 80~120 DEG C, during holding
Between between 1~3min；F) temperature is down to room temperature, and pressure unloads completely.
In step 8), the LED epitaxial layers after para-linkage carry out laser lift-off, remove growth substrates.The transfer lining of bonding
Bottom uses metal structure, will greatly reduce damage caused by residual stress in LED epitaxial layers.GaN is mixed to the non-of exposure after stripping
The surface of layer carries out the cleaning of watery hydrochloric acid, gets rid of the Ga drops on surface.
In step 9), using wet etching or ICP etchings+non-doped gan layer in wet etching nitrogen face (about 1~2 μm).Wet method
Corrosion uses 100~160 DEG C of hot phosphoric acid, and the width of expansion of laser light road plan obtains more smooth nitrogen face surface to more than 20 μm.
ICP etchings and the condition of phosphoric acid corrosion are controlled, effectively discharges the residual stress in chip.
In step 10), the metal of evaporating n electrode, using palladium Pd, indium In, nickel and golden Au metal structure, Pd/In/
Ni/Au structures or Cr/Pt/Au structures.
In step 11), exiting surface is roughened with hot phosphoric acid, or surface is obtained using the method for nano impression and etching
Micro-nano n faces go out light cone.Surface is roughened using hot phosphoric acid, can obtain 12 face pyramidal structures of more exiting surfaces, simultaneously
The inclination angle of corrosion side can be adjusted according to the temperature and concentration of solution.
In step 12), according to semiconductor Si, GaAs substrates can expire as transfer substrate, common laser scribing
Foot requires, the scribing of the transfer substrate for Cu bases, need to do scribing segmentation using picosecond laser.
For inverted structure LED chip, the preparation side of the membrane structure LED chip of the invention based on silver-base metal bonding
Method is as follows：
1) growth substrates for being adapted to laser lift-off are provided, and LED epitaxial layers are grown in growth substrates, are served as a contrast from growth
Bottom is upward, successively including n-contact layer, MQW and P type contact layer；
2) LED epitaxial layers are separated into by individual dice using laser scribing；
3) inductively coupled plasma ICP lithographic methods are utilized, in each die surfaces etched portions P type contact layer extremely
Expose n-contact layer, while etching aisle is formed around each tube core；
4) n-electrode is prepared in the n-contact layer exposed；
5) p-electrode is prepared in P type contact layer；
6) reflecting layer is further prepared in p-electrode；
7) deposition forms passivation layer, passivation layer parcel etching aisle, and completely cuts off n-electrode and p-electrode, prevents from leaking electricity；
8) bond wire is deposited respectively on the surface on the surface in reflecting layer and transfer substrate, the material of bond wire uses
AgCuIn alloys, then para-linkage metal carry out thermal annealing；
9) the transfer substrate that bond wire has been deposited is anchored to be formed on the LED epitaxial layers in growth substrates, in high temperature
Under high pressure, transfer substrate is bonded together with LED epitaxial layers, the bonding gold on the bond wire on transition zone and transfer substrate
Category is fused into one layer of bonding metal layer；
10) growth substrates, the surface of the LED epitaxial layers of clean stripping are removed using laser-stripping method；
11) roughening treatment is carried out to the LED epi-layer surfaces after laser lift-off, forms n faces and go out light cone；
12) with machinery or laser cutting LED epitaxial layers, test and sort to obtain LED core blade unit.
Wherein, in step 8), bond wire is AgCuIn alloys, in order to ensure the uniformity of AgCuIn alloy compositions,
Employ following steps：A) AgCuIn of a layer thickness between 400~500nm is deposited with constant 0.4~0.5nm/s speed
Alloy；B) AgCuIn alloy of a layer thickness between 500~1000nm is deposited with constant 8~12nm/s speed again；C) pass through
After crossing 1~5min intervals, repeat step b).After the evaporation for completing AgCuIn alloys, using under 200~300 DEG C of blanket of nitrogen 20~
30min annealing, ensure that alloy compositions are uniform.AgCuIn thickness is 1.5~2 μm, can ensure that bonding metal layer endures 500
Chip technology temperature more than DEG C.
In step 9), transfer substrate uses semiconductor wafer or metal.Transfer substrate includes Semiconductor substrate and p-electrode
Layer, in its front deposition bond wire.Bonding process is typically carried out step by step, and specific steps include：A) 800 are boosted to~
Between 1000kgf/wafer, temperature is risen between 80~120 DEG C, and the retention time is between 1~3min；B) 4000 are boosted to~
Between 5000kgf/wafer, temperature is risen between 200~300 DEG C, and the retention time is between 1~3min；C) pressure is kept not
Become, temperature is risen between 300~500 DEG C, and the retention time is between 10~30min；D) holding pressure is constant, and temperature is down to 200
Between~300 DEG C, the retention time is between 1~3min；E) keep that pressure is constant, and temperature is down between 80~120 DEG C, during holding
Between between 1~3min；F) temperature is down to room temperature, and pressure unloads completely.
Bonding technology in being prepared present invention employs AgCuIn alloys as bonding metal layer completion vertical structure LED,
Stable mechanical strength is realized, bonding temperature is bonded with certain reduction with the retention time compared with Au-Au, and AuSn Bonded Phases ratio,
The cavitation of bonding metal layer is eliminated, is advantageous to the stress release in LED epitaxial layers；Also, using AgCuIn as key
Alloy category, the manufacturing cost of light emitting diode (LED) chip with vertical structure is greatly reduced, be advantageous to the marketization hair of light emitting diode (LED) chip with vertical structure
Exhibition.
Advantages of the present invention：
1) AgCuIn bondings can be completed under relatively low bonding temperature and bonding pressure, and bonding time shortens, and is advantageous to
Reduce damage of the bonding process to the photoelectric properties of LED epitaxial layers；
2) bonding metal layer of AgCuIn alloys is used, the cavitation in bonding process is eliminated, is advantageous to outside to LED
Prolong the stress release of layer；
3) AgCuIn is bonded mechanical performance height, has good conduction and heat conductivility, is advantageous to improve the longevity of LED chip
Life；
4) AgCuIn alloys are cheap, and Au-Au Bonded Phases ratio, greatly reduce the system of light emitting diode (LED) chip with vertical structure
This is caused, is advantageous to the marketing development of light emitting diode (LED) chip with vertical structure.
Brief description of the drawings
Fig. 1 is the structural representation of one embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention
Figure, wherein, (a) is profile, and (b) is top view；
Fig. 2 is the LED epitaxial layers of one embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention
Schematic diagram；
Fig. 3 is that the laser scribing division of one embodiment of the present of invention and the effect of chemical wet etching LED core blade unit are shown
It is intended to, wherein, (a) is profile, and (b) is top view；
Fig. 4 is the side wall passivation of one embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention
Design sketch, wherein, (a) is the design sketch for forming passivation material, and (b) is the design sketch formed after passivation layer；
Fig. 5 is one embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention in p-electrode
The profile of reflecting layer and transition zone is deposited in surface；
Fig. 6 is the AgCuIn keys of one embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention
Close process schematic；
Fig. 7 is the laser lift-off of one embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention
Schematic diagram.
Embodiment
Below in conjunction with the accompanying drawings, the present invention will be further described by taking the LED chip of vertical stratification as an example.
As shown in figure 1, the membrane structure LED core blade unit of the vertical stratification of the present embodiment includes：Shift substrate 0, bonding
Metal level 1, transition zone 2, reflecting layer 3, p-electrode 4, LED epitaxial layers 5, n-electrode 6, n faces go out light cone 7 and passivation layer 8；Wherein, exist
Bonding metal layer 1, transition zone 2, reflecting layer 3, p-electrode 4 and LED epitaxial layers 5 are sequentially consisted of on transfer substrate 0；In LED
N-electrode 6 is formed in the sub-fraction of epitaxial layer；N faces, which are formed, in part of the surface of LED epitaxial layers in addition to n-electrode goes out light cone
7；Reflecting layer 3 and n faces go out light cone structure 7 into light emitting structures；The side wall of laser road plan and etching aisle between LED core blade unit
Passivation material is filled, forms passivation layer 8.In the present embodiment, insulating layer material uses SiO2.In bonding metal layer 1, Ag's
The component that the component that component is 40%, Cu is 50%, In is 10%.
As shown in Fig. 1 (b), the figure of n-electrode 6 includes：Annulus, two strips and two circles；Wherein, two strip phases
The center of annulus is intersected at, a circle is respectively equipped with one end of two strips, as n-electrode contact point.
For shifting substrate 0, transfer substrate includes Semiconductor substrate and p-electrode layer, and Semiconductor substrate is tied using WCu
Structure, Si etc. can also be used to replace.Transfer substrate is bonded together by AgCuIn bonding metal layers and LED epitaxial layers.
The size of above planar structure is 1.1mm, is the representative value of large scale LED chip, to arbitrary dimension chip, its chi
Very little to be changed in the range of 0.2~5mm, the size of chip part can also change in proper range in proportion.
The preparation method of the present embodiment specifically includes following steps：
1) provide the Sapphire Substrate 01 that thickness is about 400 μm and be used as growth substrates, the non-of about 2 μm of first growth thickness is mixed
GaN layer 02, LED epitaxial layer of the total thickness at 30 μm is then grown, including：The n-contact layer 51 of heavy doping, doping concentration are about
1019cm-3N faces GaN Ohmic contacts are formed to facilitate, about 2 μm of its thickness；Thicker current extending is advantageous to quasi- extension
Mode improves the crystal mass of SQW；N-layer 52, concentration is typically 1018cm-3, about 2 μm of thickness, the thickness of MQW 53
About tens nanometers, the thickness about 5nm of the about 200nm of p-type layer 54 and P type contact layer 55, P type contact layer uses InGaN, to be advantageous to
Ohmic contact is formed with ITO, as shown in Figure 2.
2) laser scribing is used on LED epitaxial layers, LED epitaxial layers are divided into isolated area, gone using wet etching
Except sidewall damage caused by laser, laser road plan 08 is formed, laser scribing penetrates LED epitaxial layers to Sapphire Substrate 01.
3) using PECVD depositions 300nm SiO2Film is as mask layer, using photolithography method, using photoresist as mask,
The method etched using ICP, n-layer 51 is etched to, forms etching aisle 03, obtain LED core blade unit, then remove photoetching
Glue, remove SiO2, as shown in Figure 3.The wet etching condition used for phosphoric acid and the mixed acid of sulfuric acid, corrosion temperature 200~
Between 250 DEG C, etching time about 15min, about 2 μm of side wall corrosion cone.
4) PECVD grows the SiO that a layer thickness is about 300~500nm on LED epitaxial layers2Passivation material, such as Fig. 4
(a) shown in, after the passivation material that photoetching removes P type contact layer surface, in the edge of P type contact layer, apart from the μ of edge 10
Some passivation material retains in m, forms passivation layer 8, as shown in Fig. 4 (b), preferably to realize that side wall is protected.
5) transparent conductive electrode is deposited as p-electrode 4, thickness 230nm, then in the table of p-electrode in LED epitaxial layers
Reflecting layer 3 and transition zone 2 is deposited in face, as shown in Figure 5.
6) in transfer substrate 0 and about 2 μm of the surface for the LED epitaxial layers that p-electrode and reflecting layer has been deposited while evaporation thickness
AgCuIn alloys, the metal of electron beam evaporation plating is AgCuIn ternary alloy three-partalloy solders, and the evaporation condition of AgCuIn alloys is as follows：a)
With the thick AgCuIn alloys of 0.5nm/s speed evaporation 500nm；B) the thick AgCuIn of 750nm are deposited with 10nm/s speed again
Alloy；C) behind the interval of 3 minutes, repeat step b).Then in 300 DEG C of N2Anneal 30min under atmosphere, ensures alloy group
Divide uniform.
7) transfer substrate is bonded together with LED epitaxial layers, as shown in Figure 6.Step is used by bonding：A) boost
To 800kg, temperature rises to 80 DEG C, retention time 3min；B) 4000kg is boosted to, temperature rises to 300 DEG C, retention time 3min；
C) pressure is kept, is warming up to 380 DEG C, keeps 30min；D) pressure is kept, is cooled to 300 DEG C, keeps 3min；E) pressure is kept,
80 DEG C are cooled to, keeps 3min；F) temperature is down to room temperature, and pressure unloads completely.
8) laser lift-off is carried out, laser is incident from Sapphire Substrate 01, and Sapphire Substrate 01 is peeled off, as shown in fig. 7,
And expose non-doped gan layer.
9) non-doped gan layer is etched away using ICP, and exposes the n-contact layer of heavy doping, utilize the method pair of corrosion afterwards
Heavily doped n-contact layer carries out removing surface and expanded that laser road plan is expanded, and realizes that stress is adjusted to a certain extent.
10) n-electrode 6 is deposited.
11) form the cycle on the surface of n-contact layer or aperiodic n faces go out light cone 7.
12) LED core blade unit is obtained along etching aisle machinery or laser cutting LED epitaxial layers, test, sorting, such as
Shown in Fig. 1.
It is finally noted that the purpose for publicizing and implementing mode is that help further understands the present invention, but ability
The technical staff in domain is appreciated that：Without departing from the spirit and scope of the invention and the appended claims, it is various replacement and
Modification is all possible.Therefore, the present invention should not be limited to embodiment disclosure of that, the scope of protection of present invention with
The scope that claims define is defined.
Claims (5)
1. a kind of preparation method of the membrane structure LED core blade unit based on silver-base metal bonding, it is characterised in that for vertical
Structure LED chip, the preparation method comprise the following steps：
1) growth substrates for being adapted to laser lift-off are provided, non-doped gan layer are grown in growth substrates, in non-doped gan layer
Growing n-type contact layer, n-layer, MQW, p-type layer and P type contact layer successively, form LED epitaxial layers；
2) the LED core blade unit of separation is marked off using laser scribing on LED epitaxial layers, deeply to growth substrates, is formed and swashed
Light road plan, laser road plan is cleaned, remove the residue in sidewall damage area and laser road plan；
3) one layer of mask layer is grown on LED epitaxial layers, LED core blade unit is etched on mask layer, is etched to n-layer, is formed
Aisle is etched, mask layer is removed and exposes P type contact layer, further remove etching injury, then remove mask layer；
4) the regrowth passivation material on LED epitaxial layers, figure is prepared using the method for photoetching and carries out wet etching, is gone
Except the passivation material on P type contact layer surface, retain laser road plan and etch the passivation material of aisle side wall, form passivation
Layer；
5) p-electrode is deposited on the surface of P type contact layer, reflecting layer and transition zone then is deposited on the surface of p-electrode；
6) by the way of electron beam evaporation, bond wire, bond wire is deposited simultaneously on the surface of transition zone and transfer substrate
Material use AgCuIn alloys, then para-linkage metal carry out thermal annealing；
7) the transfer substrate that bond wire has been deposited is anchored to be formed on the LED epitaxial layers in growth substrates, substrate will be shifted
It is bonded together with LED epitaxial layers, the bond wire on the bond wire on transition zone and transfer substrate is fused into one layer of bonding
Metal level：
Bonding process includes：A) between boosting to 800~1000kgf/wafer, temperature is risen between 80~120 DEG C, during holding
Between between 1~3min；B) between boosting to 4000~5000kgf/wafer, temperature is risen between 200~300 DEG C, during holding
Between between 1~3min；C) keep pressure it is constant, temperature is risen between 300~500 DEG C, the retention time 10~30min it
Between；D) holding pressure is constant, and temperature is down between 200~300 DEG C, and the retention time is between 1~3min；E) pressure is kept not
Become, temperature is down between 80~120 DEG C, and the retention time is between 1~3min；F) temperature is down to room temperature, and pressure unloads completely, its
In, wafer is the disk of 2 inches diameter；
8) growth substrates are removed using laser-stripping method, and exposes non-doped gan layer, the table of the LED epitaxial layers of clean stripping
Face；
9) wet method and dry etching are carried out, is gone unless doped gan layer, exposes n-contact layer, and cause laser road plan to expand
Greatly, portion of residual stress is discharged；
10) metal of evaporating n electrode, part metals are removed using stripping means, exposes most n-contact layer, form n electricity
Pole, the Ohmic contact stablized of annealing；
11) passivation protection of electrode and side wall is carried out, is roughened the surface of n-contact layer, forms cycle or aperiodic n faces light extraction
Cone, so as to form the light emitting structures for going out light cone including reflecting layer and n faces；
12) with machinery or laser cutting LED epitaxial layers, test and sort to obtain LED core blade unit.
2. preparation method as claimed in claim 1, it is characterised in that in step 6), bond wire is AgCuIn alloys, is steamed
Plating process comprises the following steps：A) a layer thickness is deposited between 400~500nm with constant 0.4~0.5nm/s speed
AgCuIn alloys；B) AgCuIn of a layer thickness between 500~1000nm is deposited again with constant 8~12nm/s speed to close
Gold；C) behind 1~5min intervals, repeat step b).
3. preparation method as claimed in claim 1, it is characterised in that in step 6), after the evaporation for completing AgCuIn alloys,
Using the annealing of 20~30min under 200~300 DEG C of blanket of nitrogen.
4. a kind of preparation method of the membrane structure LED core blade unit based on silver-base metal bonding, it is characterised in that for upside-down mounting
Structure LED chip, the preparation method comprise the following steps：
1) provide be adapted to laser lift-off growth substrates, and in growth substrates grow LED epitaxial layers, from growth substrates to
On, successively including n-contact layer, MQW and P type contact layer；
2) LED epitaxial layers are separated into by individual dice using laser scribing；
3) inductively coupled plasma ICP lithographic methods are utilized, in each die surfaces etched portions P type contact layer to exposing
N-contact layer, while etching aisle is formed around each tube core；
4) n-electrode is prepared in the n-contact layer exposed；
5) p-electrode is prepared in P type contact layer；
6) reflecting layer is further prepared in p-electrode；
7) deposition forms passivation layer, passivation layer parcel etching aisle, and completely cuts off n-electrode and p-electrode；
8) bond wire is deposited respectively on the surface on the surface in reflecting layer and transfer substrate, the material of bond wire uses AgCuIn
Alloy, then para-linkage metal carry out thermal annealing；
9) the transfer substrate that bond wire has been deposited is anchored to be formed on the LED epitaxial layers in growth substrates, substrate will be shifted
It is bonded together with LED epitaxial layers, the bond wire on the bond wire on transition zone and transfer substrate is fused into one layer of bonding
Metal level
Bonding process includes：A) between boosting to 800~1000kgf/wafer, temperature is risen between 80~120 DEG C, during holding
Between between 1~3min；B) between boosting to 4000~5000kgf/wafer, temperature is risen between 200~300 DEG C, during holding
Between between 1~3min；C) keep pressure it is constant, temperature is risen between 300~500 DEG C, the retention time 10~30min it
Between；D) holding pressure is constant, and temperature is down between 200~300 DEG C, and the retention time is between 1~3min；E) pressure is kept not
Become, temperature is down between 80~120 DEG C, and the retention time is between 1~3min；F) temperature is down to room temperature, and pressure unloads completely, its
In, wafer is the disk of 2 inches diameter；
10) growth substrates, the surface of the LED epitaxial layers of clean stripping are removed using laser-stripping method；
11) roughening treatment is carried out to the LED epi-layer surfaces after laser lift-off, forms n faces and go out light cone；
12) with machinery or laser cutting LED epitaxial layers, test and sort to obtain LED core blade unit.
5. preparation method as claimed in claim 4, it is characterised in that in step 8), bond wire is AgCuIn alloys, is steamed
Plating process comprises the following steps：A) a layer thickness is deposited between 400~500nm with constant 0.4~0.5nm/s speed
AgCuIn alloys；B) AgCuIn of a layer thickness between 500~1000nm is deposited again with constant 8~12nm/s speed to close
Gold；C) behind 1~5min intervals, repeat step b).
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| CN109326694B (en) * | 2018-10-30 | 2020-04-10 | 扬州乾照光电有限公司 | Manufacturing method of light emitting diode and light emitting diode chip |
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| CN102489871A (en) * | 2011-12-05 | 2012-06-13 | 贵研铂业股份有限公司 | Welding method of copper and copper alloy |
| CN103474529A (en) * | 2013-10-11 | 2013-12-25 | 聚灿光电科技(苏州)有限公司 | Method for manufacturing vertical light-emitting diode (LED) chip and vertical LED chip |
| CN103811631A (en) * | 2012-11-05 | 2014-05-21 | 铼钻科技股份有限公司 | Chip flip type light emitting diode packaging module and manufacturing method thereof |
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| CN102489871A (en) * | 2011-12-05 | 2012-06-13 | 贵研铂业股份有限公司 | Welding method of copper and copper alloy |
| CN103811631A (en) * | 2012-11-05 | 2014-05-21 | 铼钻科技股份有限公司 | Chip flip type light emitting diode packaging module and manufacturing method thereof |
| CN103474529A (en) * | 2013-10-11 | 2013-12-25 | 聚灿光电科技(苏州)有限公司 | Method for manufacturing vertical light-emitting diode (LED) chip and vertical LED chip |
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