CN108133993A - A kind of ultraviolet LED vertical chip structure - Google Patents
A kind of ultraviolet LED vertical chip structure Download PDFInfo
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- CN108133993A CN108133993A CN201810089620.5A CN201810089620A CN108133993A CN 108133993 A CN108133993 A CN 108133993A CN 201810089620 A CN201810089620 A CN 201810089620A CN 108133993 A CN108133993 A CN 108133993A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Abstract
The invention belongs to ultraviolet LED field more particularly to a kind of ultraviolet LED vertical chip structures.The present invention provides a kind of ultraviolet LED vertical chip structure, including：N-type electrode, the first substrate, the first epitaxial layer and the p-type electrode set gradually；First epitaxial layer includes the buffering and nucleating layer being sequentially overlapped, AlN/AlGaN superlattices and N-shaped AlGaN layer；The buffering and nucleating layer are superimposed with first substrate；The buffering and the BN layers that nucleating layer is heterojunction structure；First substrate is miniature nano-patterned sapphire substrate.The present invention on the surface of miniature nano-patterned sapphire substrate by being superimposed the BN layers of heterojunction structure, BN material melting points are high, thermal stability is good, improve the rate of quality of materials and the crystal cross growth in ultraviolet LED epitaxial layer structure, the stress for reducing dislocation density, effectively alleviating foreign substrate and epitaxial layer from root to the maximum extent.
Description
Technical field
The invention belongs to ultraviolet LED field more particularly to a kind of ultraviolet LED vertical chip structures.
Background technology
With the development of LED technology, the promotion of output performance, the reduction of production cost, compared with current ultraviolet source,
LED has many advantages, such as service life length, high efficiency, reliable and stable, brightness uniformity and without noxious material, sterilizing,
The extensive use in the fields such as photocuring and general illumination, is also increasingly paid close attention in recent years by semiconductor lighting industry.But
It is, at present during nano-patterned substrate template, nitride epitaxial Material growth etc., due to depositing between epitaxial layer structure
In crackle, lattice mismatch, internal residual stress, there is larger lattice mismatch between substrate and epitaxial layer, and cause
The problems such as crystal quality is poor.
Invention content
The present invention provides a kind of ultraviolet LED vertical chip structure, between solution in the prior art epitaxial layer structure
In there is crackle, lattice mismatch, internal residual stress, there is larger lattice mismatch between substrate and epitaxial layer, and make
The problem of into crystal quality difference etc..
The specific technical solution of the present invention is as follows：
A kind of ultraviolet LED vertical chip structure, including：N-type electrode, the first substrate, the first epitaxial layer and the p set gradually
Type electrode；
First epitaxial layer includes the buffering and nucleating layer being sequentially overlapped, AlN/AlGaN superlattices and N-shaped AlGaN layer；
The buffering and nucleating layer are superimposed with first substrate；
The buffering and the BN layers that nucleating layer is heterojunction structure；
First substrate is miniature nano-patterned sapphire substrate.
Further, it further includes：Second epitaxial layer；
Second epitaxial layer includes the Quantum well active district, electronic barrier layer, p-type AlGaN layer and the p-type that are sequentially overlapped
GaN coatings；
Second epitaxial layer is set between first epitaxial layer and the p-type electrode；
The Quantum well active district is superimposed with the N-shaped AlGaN layer.
Preferably, second epitaxial layer is provided with gap；
The gap is through the Quantum well active district, the electronic barrier layer, the p-type AlGaN layer and the p-type
GaN coatings；
The gap is nano size voids, and the width of the nano size voids is by the Quantum well active district to the p-type
GaN coatings become larger successively.
Further, it further includes：Second substrate；
Second substrate is set to by articulamentum between second epitaxial layer and the p-type electrode.
Preferably, the surface of second substrate towards the p-type electrode is superimposed with conductive membrane layer；
The conductive membrane layer is graphene layer.
Preferably, thin film reflective layer and hanging conductive layer are superimposed between the articulamentum and second epitaxial layer；
The thin film reflective layer and articulamentum contact；
The flying leads layer and p-type GaN coatings contact.
Preferably, first substrate, the buffering and nucleating layer and AlN/AlGaN superlattices setting are fluted；
The groove is through first substrate, the buffering and nucleating layer and the AlN/AlGaN superlattices；
The groove is trapezoidal groove.
Preferably, separation layer and metal bolt are provided in the trapezoidal groove；
The separation layer is surrounded on the metal bolt.
Preferably, it is provided with N-shaped ohmic contact layer between the n-type electrode and first substrate；
P-type ohmic contact layer is provided between the p-type electrode and the conductive membrane layer.
Preferably, second substrate is miniature nano graph silicon substrate.
In conclusion the present invention provides a kind of ultraviolet LED vertical chip structure, including：The n-type electrode that sets gradually,
First substrate, the first epitaxial layer and p-type electrode；First epitaxial layer includes the buffering being sequentially overlapped and nucleating layer, AlN/
AlGaN superlattices and N-shaped AlGaN layer；The buffering and nucleating layer are superimposed with first substrate；The buffering and nucleating layer are
The BN layers of heterojunction structure；First substrate is miniature nano-patterned sapphire substrate.In the present invention, by the first substrate
Surface on be superimposed the buffering and nucleating layer of heterojunction structure, BN material melting points are high, thermal stability is good, and the first substrate is received to be miniature
Rice graphical sapphire substrate, improved from root to the maximum extent quality of materials in ultraviolet LED epitaxial layer structure and
The rate of crystal cross growth, the stress for reducing dislocation density, effectively alleviating foreign substrate and epitaxial layer.
Description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described.
Fig. 1 is a kind of structure diagram of ultraviolet LED vertical chip structure in the embodiment of the present invention；
It illustrates：1. the first substrate；2. buffering and nucleating layer；3.AlN/AlGaN superlattices；4.n type AlGaN layers；5.
Gap；6. Quantum well active district；7. electronic barrier layer；8.p type AlGaN layers；9.p type GaN coatings；10. hanging conductive layer；
11. thin film reflective layer；12.n type ohmic contact layers；13.n type electrodes；14. articulamentum；15. the second substrate；16. conductive film
Layer；17.p type ohmic contact layers；18.p type electrodes；19. passivation layer；20. metal bolt；21. separation layer.
Specific embodiment
The present invention provides a kind of ultraviolet LED vertical chip structure, between solution in the prior art epitaxial layer structure
In there is crackle, lattice mismatch, internal residual stress, there is larger lattice mismatch between foreign substrate and epitaxial layer,
And the problem of causing crystal quality difference etc..
The technical solution in the embodiment of the present invention will be clearly and completely described below, it is clear that described implementation
Example is only part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's all other embodiments obtained without making creative work belong to the model that the present invention protects
It encloses.
A kind of ultraviolet LED vertical chip structure, including：The n-type electrode 13 that sets gradually, the first substrate 1, the first epitaxial layer
With p-type electrode 18；
First epitaxial layer includes the buffering and nucleating layer 2 being sequentially overlapped, AlN/AlGaN superlattices 3 and N-shaped AlGaN layer 4；
Buffering and nucleating layer 2 are superimposed with the first substrate 1；
Buffering and the BN layers that nucleating layer 2 is heterojunction structure；
First substrate 1 is miniature nano-patterned sapphire substrate.
In the embodiment of the present invention, by being superimposed the BN layers of heterojunction structure, BN material melting points on the surface of the first substrate 1
Height, thermal stability are good, and the first substrate 1 is miniature nano-patterned sapphire substrate, improves purple from root to the maximum extent
The rate of quality of materials and crystal cross growth in outer LED epitaxial layer structures reduces dislocation density, effectively alleviates
The stress of first substrate 1 and the first epitaxial layer.Also, by setting BN buffer layers, it is dark purple to avoid later stage vertical inverted structure
The obstacle of Sapphire Substrate in outer LED encapsulation process in LED epitaxial structure and the stripping of buffer layer difficulty or even also reduce is being shelled
From harm such as the damages being likely to occur in the process.
In the embodiment of the present invention, the thickness of AlN/AlGaN superlattices 3 is 0.8~1.4 μm；N-shaped AlGaN layer 4 is heavy doping
N-shaped AlGaN layer, thickness are 2 μm.Wherein, AlN/AlGaN superlattices 3 are multicycle spaced distributed architecture, and there is provided 20
Period.Wherein, the AlN layers comprising about 20~35nm thickness and 20~35nm are thick in the AlN/AlGaN superlattices 3 in each period
AlGaN layer.
Further, it further includes：Second epitaxial layer；
Second epitaxial layer includes the Quantum well active district 6, electronic barrier layer 7, p-type AlGaN layer 8 and the p-type GaN that are sequentially overlapped
Coating 9；
Second epitaxial layer is set between the first epitaxial layer and p-type electrode 18；
Quantum well active district 6 is superimposed with N-shaped AlGaN layer 4.
In the embodiment of the present invention, the second epitaxial layer is provided with gap 5；
Gap 5 is through Quantum well active district 6, electronic barrier layer 7, p-type AlGaN layer 8 and p-type GaN coatings 9；
Gap 5 is nano size voids, the width of nano size voids by Quantum well active district 6 to p-type GaN coatings 9 successively
Become larger.
In the embodiment of the present invention, the surface of N-shaped AlGaN layer 4 is provided with the second epitaxial layer, and electronic barrier layer is p-type AlGaN
Layer, the quantity in gap 5 is three or three or more, forms miniature nano column array.Enter air in gap 5, formed between air
Gap.The second epitaxial layer with miniature nano-pillar array structure includes successively：The Quantum well active district 6 of about 62.5nm thickness, about
The electronic barrier layer 7 of 60nm thickness, the p-type AlGaN layer 8 of about 10nm thickness and the p-type GaN coatings 9 of about 100nm thickness.The present invention is logical
Cross inclined miniature nano column array of the setting containing the air gap so that empty between the active area in miniature nano column array
Gas is mutually communicated, and then using the total reflection between both interfaces and the light scattering effect of tilted interface, to enhance depth
The light extraction efficiency of ultraviolet LED.The surface of N-shaped AlGaN layer 4 is coarse surface, further enhances the LED with miniature nano-pillar
The reflector efficiency of second epitaxial layer structure, 4 interface of N-shaped AlGaN layer in the vertical direction so that LED epitaxial chips go out light efficiency
Rate increases, and improves the light output intensity of LED.
In the embodiment of the present invention, Quantum well active district 6 be AlGaN/AlGaN Quantum well active districts, AlGaN/AlGaN quantum
Trap active area has 5 periods, and AlGaN well layer and the 2.5nm that about 10nm thickness is contained in the quantum well layer in each period are thick
AlGaN potential barrier.What p-type AlGaN layer 8 was selected is the AlGaN materials of high alumina molar constituent, due to the lattice of p-type AlGaN layer 8
Constant will be big than electronic barrier layer 7 and p-type GaN coatings 9, but its energy gap is covered than electronic barrier layer 7 and p-type GaN
Cap rock 9 will be small, effectively has adjusted the energy in hole in 8 region of p-type AlGaN layer, improves the internal quantum efficiency of LED.Its
In, electronic barrier layer 7 and p-type GaN coatings 9 also act as the effect of the transmission of materials layer in p-type area.
Further, it further includes：Second substrate 15；
Second substrate 15 is set to by articulamentum 14 between the second epitaxial layer and p-type electrode 18.
Articulamentum 14 gets up the first epitaxial layer and the second mutually bonding of substrate 15, forms electrical connection.
In the embodiment of the present invention, the surface of the second substrate 15 towards p-type electrode 18 is superimposed with conductive membrane layer 16；
Conductive membrane layer 16 is graphene layer.
Conductive membrane layer 16 is graphene layer, and grapheme material good conductivity, heat dissipation effect are superior, conductive membrane layer 16
Surface on be provided with external p-type electrode 18.Graphene layer of the embodiment of the present invention preferably improves deep ultraviolet LED epitaxial layers
Quality of materials in structure.
In the embodiment of the present invention, thin film reflective layer 11 and hanging conductive layer are superimposed between 14 and second epitaxial layer of articulamentum
10；
Thin film reflective layer 11 and articulamentum 14 contact；
Hanging conductive layer 10 and p-type GaN coatings 9 contact.
In the embodiment of the present invention, the thickness about 50nm of hanging conductive layer 10；The thickness of thin film reflective layer 11 about 50nm.
In the embodiment of the present invention, what hanging conductive layer 10 was selected is the indium tin oxide material of good conductivity, and thickness is preferably
50nm.The thickness optimization of thin film reflective layer 11 is 50nm, and surface is roughening, and thin film reflective layer 11 uses metal aluminium material, increases
The strong reflecting effect of light and the amount of light for improving LED chip.Simultaneously at this time, positioned at miniature nano column array
Electrode zone at the top of second epitaxial layer of structure, the structure collectively constituted by hanging conductive layer 10 and thin film reflective layer 11,
It preferably acts as and contacts external electrode structure with a kind of centre to serve as a connection that internal epitaxial layer structure is connected with each other
Layer medium.
The second epitaxial layer of the embodiment of the present invention has the inclined miniature nano column array of the air gap, it is ensured that adjacent
Mutually run through between inclined miniature nano column array by air, while also so that hanging be arranged on of hanging conductive layer 10 is erected
On the surface of the upward miniature nano column array of Nogata.On the one hand, since the active area in miniature nano-pillar is deep ultraviolet LED's
Light-emitting zone, and then utilize the total reflection between the active area and both interfaces of outside air being located in inclination nano column array
And the light scattering effect at tilted interface, enhance the light extraction efficiency of LED.On the other hand, since Quantum well active district 6 is also
Main pyrotoxin in LED chip by setting this miniature nano-pillar LED epitaxial layer structures containing the air gap, may be used also
So that the thermal diffusion path between pyrotoxin and outside air shortens, LED chip thermal diffusion is accelerated, and protects chip because of overheat
And it fails.
In on the first epitaxial layer, the first epitaxial layer and the second epitaxial layer electrically connect for second substrate 15 and the back-off of the second epitaxial layer
It connects, be bonded.
In the embodiment of the present invention, the first substrate 1, buffering and nucleating layer 2 and AlN/AlGaN superlattices 3 set fluted；
Groove is through the first substrate 1, buffering and nucleating layer 2 and AlN/AlGaN superlattices 3；
Groove is trapezoidal groove.
Separation layer 21 and metal bolt 20 are provided in the embodiment of the present invention, in trapezoidal groove；
Separation layer 21 is surrounded on metal bolt 20.
In the embodiment of the present invention, the quantity of trapezoidal groove is multiple, and the setting of multiple trapezoidal grooves causes current expansion more
Soon.It is provided with separation layer 21 and metal bolt 20 in trapezoidal groove, separation layer 21 is surrounded on metal bolt 20 and forms and external contact
The electrical connection of electrode, shortens the heat-transfer path between pyrotoxin and the external world in deep ultraviolet LED chip, radiating efficiency higher,
And improve the reliability of LED.
In the embodiment of the present invention, N-shaped ohmic contact layer 12 is provided between 13 and first substrate 1 of n-type electrode；
P-type ohmic contact layer 17 is provided between p-type electrode 18 and conductive membrane layer 16.
In the embodiment of the present invention, the side wall and external electrical of table top, epitaxial layer structure in deep ultraviolet LED epitaxial wafer structure
Pole surface have passed through Passivation Treatment, it is therefore prevented that corrosion of the external environment to LED chip is reduced and leaked at table top and mesa sidewall
Influence of the electric current to LED chip, meanwhile, also by setting the metal stud structure of trapezoidal shape, directly improve efficiently LED
The current spreading problem of Quantum well active district 6 in epitaxial wafer, alleviates electric current pile up effect, improves the light output of LED component
Power.Similarly, processing is also passivated to the surface of interior contact electrode, forms the circular cylindrical of package interior contact electrode
Insulation layer structure, it is therefore prevented that directly form electric current between the sidewall surfaces of interior contact electrode structure and chip interior contact layer
Circuit and cause short circuit.Wherein, the thickness of separation layer is optimized for about 10nm.
In the embodiment of the present invention, the second substrate 15 is miniature nano graph silicon substrate.
Miniature nano graph silicon substrate is the silicon substrate of good conductivity, and silicon substrate is p-type silicon substrate or intrinsic silicon
Substrate, meanwhile, miniature nano patterning surface of silicon has miniature nanometer hole pattern, effectively alleviates the second extensions of LED
Stress between layer structure.
Ultraviolet LED of embodiment of the present invention vertical chip structure can have ultraviolet LED vertical chip, and size is suitable, crystal
It is high-quality, light extraction efficiency is high, thermal diffusivity is good and the advantages that high efficient and reliable.
In the embodiment of the present invention, silicon substrate epitaxial layer structure is inverted and passes through the bonding at middle part, outside the silicon substrate after inversion
Prolong layer structure directly to tip upside down on Sapphire Substrate ultraviolet LED epitaxial layer structure, two kinds of epitaxial layer structure electrical connections.Meanwhile
The internal electrode and external electrode of LED epitaxial chips after bonding are vapor deposition treatment, and multiple outsides are respectively provided at both ends
P-type electrode 18 and n-type electrode 13, and then form a kind of vertical inverted structure of LED epitaxial chips.
In the embodiment of the present invention, the first substrate 1, buffering and nucleating layer 2 and AlN/AlGaN superlattices 3 set it is fluted,
In, the quantity of groove is two or more, and groove spaced set, groove structure are shaped to trapezoidal knot
Structure effectively alleviates impact damage caused by the injection of high current density at electrode.
It should be noted that ultraviolet LED vertical chip structure of the embodiment of the present invention is additionally provided with passivation layer 19, passivation layer 19
Upper exposing p-type electrode 18 and n-type electrode 13.
A kind of one embodiment of ultraviolet LED vertical chip structure in the embodiment of the present invention is carried out above in detail
Description will prepare embodiment to one of a kind of ultraviolet LED vertical chip structure in the embodiment of the present invention below and carry out in detail
Description.
A kind of ultraviolet LED vertical chip structure, including：The n-type electrode 13 that sets gradually, the first substrate 1, the first epitaxial layer
With p-type electrode 18；
First epitaxial layer includes the buffering and nucleating layer 2 being sequentially overlapped, AlN/AlGaN superlattices 3 and N-shaped AlGaN layer 4；
Buffering and nucleating layer 2 are superimposed with the first substrate 1；
Buffering and the BN layers that nucleating layer 2 is heterojunction structure；
First substrate 1 is miniature nano-patterned sapphire substrate.
In the embodiment of the present invention, by being superimposed the BN layers of heterojunction structure, BN material melting points on the surface of the first substrate 1
Height, thermal stability are good, and the first substrate 1 is miniature nano-patterned sapphire substrate, improves purple from root to the maximum extent
The rate of quality of materials and crystal cross growth in outer LED epitaxial layer structures reduces dislocation density, effectively alleviates
The stress of first substrate 1 and the first epitaxial layer.Also, by setting BN buffer layers, it is dark purple to avoid later stage vertical inverted structure
The obstacle of Sapphire Substrate in outer LED encapsulation process in LED epitaxial structure and the stripping of buffer layer difficulty or even also reduce is being shelled
From harm such as the damages being likely to occur in the process.
In the embodiment of the present invention, before the growth for carrying out the first epitaxial layer structures of LED, under traditional experiment condition,
Using Ecr plasma sputtering equipment, select first to prepare buffer layer structure on the first substrate 1.Buffer layer choosing
Delay with the AlN materials for the heterojunction structure that thickness is about 10nm, and then instead of u-shaped GaN prepared under traditional cryogenic conditions
Layer is rushed, the embodiment of the present invention sets nano graph Sapphire Substrate, while also select by selecting both above preparation processes
The good BN materials of high-melting-point, thermal stability are used as buffer layer, effectively alleviate the stress between LED epitaxial layer structures,
It directly enhances the rate of crystal cross growth and reduces dislocation density.
The embodiment of the present invention is by using MOCVD (Metal-Organic Chemical Vapor Deposition, gold
Belong to organic compound chemical gaseous phase deposition) equipment or MOVPE (Metal-Organic Chemical Vapor Deposition,
Vapour phase epitaxy VPE) equipment, the AlN/AlGaN for continuing 0.8~1.4 μ m-thick of extension successively on the surface based on BN buffer layers surpasses
The highly doped n-type AlGaN layer 4 of lattice 3 and about 2 μ m-thicks.Wherein, AlN/AlGaN superlattices 3 are multicycle spaced distribution knot
Structure, there is provided 20 periods.Wherein, the AlN of about 20~35nm thickness is included in the AlN/AlGaN superlattices 3 in each period
The AlGaN layer of layer and 20~35nm thickness.Meanwhile the present invention is increased rapidly the temperature inside consersion unit using traditional handicraft
It to 1080~1200 DEG C and maintains after stablizing, the extension N-shaped AlGaN layer 4 on the surface of AlN/AlGaN superlattice structures, and
The thickness of ensuring n-type AlGaN layer 4 is remained substantially in 2 μm or so.
Further, it further includes：Second epitaxial layer；
Second epitaxial layer includes the Quantum well active district 6, electronic barrier layer 7, p-type AlGaN layer 8 and the p-type GaN that are sequentially overlapped
Coating 9；
Second epitaxial layer is set between the first epitaxial layer and p-type electrode 18；
Quantum well active district 6 is superimposed with N-shaped AlGaN layer 4.
In the embodiment of the present invention, the second epitaxial layer is provided with gap 5；
Gap 5 is through Quantum well active district 6, electronic barrier layer 7, p-type AlGaN layer 8 and p-type GaN coatings 9；
Gap 5 is nano size voids, the width of nano size voids by Quantum well active district 6 to p-type GaN coatings 9 successively
Become larger.
The embodiment of the present invention continues secondary epitaxy on the surface of N-shaped AlGaN layer 4 and by combining photoetching, dry method quarter
The technologies such as erosion and wet etching, ultimately form a kind of miniature nano column array containing the air gap.It should be noted that
The quantity in gap 5 is three or three or more.The second epitaxial layer with miniature nano-pillar array structure includes successively：About
The Quantum well active district 6 of 62.5nm thickness, the electronic barrier layer 7 of about 60nm thickness, the p-type AlGaN layer 8 and about 100nm of about 10nm thickness
Thick p-type GaN coatings 9.The present invention is by setting the inclined miniature nano column array containing the air gap so that miniature to receive
It is mutually communicated between active area in rice column array by air, and then using the total reflection between both interfaces and tilts boundary
The light scattering effect in face, to enhance the light extraction efficiency of deep ultraviolet LED.
Further, it further includes：Second substrate 15；
Second substrate 15 is set to by articulamentum 14 between the second epitaxial layer and p-type electrode 18.
Articulamentum 14 gets up the first epitaxial layer and the second mutually bonding of substrate 15, forms electrical connection.
In the embodiment of the present invention, the surface of the second substrate 15 towards p-type electrode 18 is superimposed with conductive membrane layer 16；
Conductive membrane layer 16 is graphene layer.
In the embodiment of the present invention, thin film reflective layer 11 and hanging conductive layer are superimposed between 14 and second epitaxial layer of articulamentum
10；
Thin film reflective layer 11 and articulamentum 14 contact；
Hanging conductive layer 10 and p-type GaN coatings 9 contact.
In the embodiment of the present invention, the hanging conductive layer 10 of about 50nm thickness has been sequentially prepared at the top of miniature nano column array
The thin film reflective layer 11 of about 50nm thickness.
In the embodiment of the present invention, the preparation process with the second epitaxial layer of miniature nano-pillar array structure is as follows：In N-shaped
A kind of masking layer with specific thicknesses of uniform deposition on the surface of AlGaN layer, masking layer select SiO2Or metallic nickel or Si3N4
Material；Using PECVD (Plasma Enhanced Chemical Vapor Deposition, the gas of plasma enhanced chemical
Phase sedimentation) equipment, in SiO2A kind of uniform, individual layer polystyrene spherical particle is deposited on masking layer so that SiO2Masking
Point contact is formed between layer and polystyrene spheres；Heat pre-treatment is carried out, while in conjunction with ICP to more than structure
(Inductively Coupled Plasma, inductively coupled plasma) lithographic technique so that polystyrene spheres gradually melt
It collapses, become smaller so that SiO2Forming face contacts and enhances bond effect and cause between masking layer and polystyrene sphere
Between adjacent polystyrene sphere, part masking layer is exposed；Carry out metal evaporation processing so that polystyrene sphere and institute
The SiO being exposed2Deposition has metal film layer on the surface of masking layer, forms metal mask structure；Surpassed again using toluene
Sonication only removes the metal film layer that is deposited on polystyrene sphere, and ensures between adjacent polystyrene sphere still
So there are certain thickness metal mask structures；Heated again, thoroughly to remove the polystyrene sphere at top, and
Completely reveal the metal mask structure of spaced arrangement；Using etching technics to SiO2Masking layer carries out vertical turnabout
On etching processing so that not by metal mask cover SiO2Masking layer is etched completely away, and is protected by metal mask
SiO2Masking layer still has, and forms the SiO that also there is metal mask to be covered at a kind of top2Nano-pillar array structure；Using
Acid liquid corrosion processing, removes SiO2The metal mask that top is covered in nano-pillar array structure；Continued using MOCVD device
Secondary epitaxy is carried out, in adjacent SiO2Multi-quantum well active region 6, electronic barrier layer 7, p are grown between nano column array successively
Type AlGaN layer 8 and p-type GaN coatings 9, and cause its overall thickness and SiO2The thickness of masking layer is unanimous on the whole；With miniature
Hanging conductive layer 10, thin film reflective layer 11, hanging conductive layer are sequentially depositing at the top of second epitaxial layer structure of nano column array
The materials such as ITO or TCL can be selected；The second epitaxial layer structures of more than LED using BOE solution are ultrasonically treated, erode SiO2
Masking layer.
During the embodiment of the present invention prepares N-shaped AlGaN layer 4 under the high temperature conditions, it is contemplated that chip material there is
Reflection and absorption to light, also by combine the first epitaxial layer structure surface reduction processing while, to N-shaped AlGaN layer 4
Surface carries out roughening treatment, directly enhances in miniature the second epitaxial layer structures of nano-pillar LED N-shaped AlGaN in the vertical direction
The reflector efficiency of 4 interface of layer so that the light extraction efficiency increase of LED epitaxial chips improves the light output intensity of LED.
In the embodiment of the present invention, the preparation in gap 5 includes photoetching, prepared by the second epitaxial layer etching, electrode, Passivation Treatment with
And the processes such as thinned sliver, scribing.
In the embodiment of the present invention, have in the preparation process of the second epitaxial layer of miniature nano-pillar array structure, by MOCVD
Temperature in consersion unit is slowly decreased to 750 DEG C, and then 5 periods of extension on the surface of N-shaped AlGaN layer 4
AlGaN/AlGaN Quantum well active districts.Wherein, the AlGaN well layer of about 10nm thickness is contained in the quantum well layer in each period
With the AlGaN potential barrier of 2.5nm thickness.And then, also continue extension electronic barrier layer 7 successively on the surface of Quantum well active district 6
With p-type AlGaN layer 8.Then, the growth temperature inside consersion unit is slowly decreased, it is outer on the surface of p-type AlGaN layer 8
Prolong p-type GaN coatings 9.Specifically, what p-type AlGaN layer 8 was selected is the AlGaN materials of high alumina molar constituent, due to p-type
The lattice constant of AlGaN layer 8 will be big than electronic barrier layer 7 and p-type GaN coatings 9, but its energy gap compares electronic blocking
7 and p-type GaN of layer coatings 9 will be small, effectively has adjusted the energy in hole in 8 region of p-type AlGaN layer, improves LED's
Internal quantum efficiency.Wherein, electronic barrier layer 7 and p-type GaN coatings 9 also act as the work of the transmission of materials layer in p-type area
With.
In the embodiment of the present invention, have in the preparation process of the second epitaxial layer of miniature nano-pillar array structure, in p-type
Uniform deposition hanging conductive layer 10 and thin film reflective layer 11 successively on the surface of GaN coatings 9, wherein, hanging conductive layer 10
What is selected is the indium tin oxide material of good conductivity, and thickness is preferably 50nm.During hanging conductive layer 10 is grown, use
Multiple annealing process processing under different temperatures gradient, enhances the adhesion strength between epitaxial material and heterojunction structure, reduces
Interior contact resistance.The thickness optimization of thin film reflective layer 11 is 50nm, and has carried out the special process processing such as surface roughening, thin
Film reflecting layer 11 uses metal aluminium material, enhances the reflecting effect of light and improves the amount of light of LED chip.At this time
Meanwhile the electrode zone at the top of the second epitaxial layer with miniature nano-pillar array structure, by hanging conductive layer 10 and thin
The structure that film reflecting layer 11 is collectively constituted preferably acts as and is connected with each other external electrode structure and internal epitaxial layer structure
A kind of intermediate contact layer medium to serve as a connection.
The embodiment of the present invention by the second epitaxial layer, using BOE, (carve by Buffered Oxide Etch, buffer oxide
Lose liquid) it is ultrasonically treated, erode SiO2Masking layer, and then form the of the inclined miniature nano column array with the air gap
Two epitaxial layers, it is ensured that mutually run through between adjacent inclined miniature nano column array by air, while also so that hanging
Conductive layer 10 has vacantly been arranged on the surface of the miniature nano column array on vertical direction.On the one hand, due to miniature nano-pillar
In active area be deep ultraviolet LED light-emitting zone, and then tilt active area in nano column array and the external world is empty using being located at
Total reflection between both interfaces of gas and the light scattering effect at tilted interface enhance the light extraction efficiency of LED.The opposing party
Face, it is this containing the miniature of the air gap by setting since Quantum well active district 6 is also the main pyrotoxin in LED chip
Nano-pillar LED epitaxial layer structures, it is also possible that the thermal diffusion path between pyrotoxin and outside air shortens, LED chip heat
Diffusion is accelerated, and chip is protected to fail due to overheat.
In on the first epitaxial layer, the first epitaxial layer and the second epitaxial layer electrically connect for second substrate 15 and the back-off of the second epitaxial layer
It connects, be bonded.
In the embodiment of the present invention, the first substrate 1, buffering and nucleating layer 2 and AlN/AlGaN superlattices 3 set fluted；
Groove is through the first substrate 1, buffering and nucleating layer 2 and AlN/AlGaN superlattices 3；
Groove is trapezoidal groove.
Separation layer 21 and metal bolt 20 are provided in the embodiment of the present invention, in trapezoidal groove；
Separation layer 21 is surrounded on metal bolt 20.
In the embodiment of the present invention, N-shaped ohmic contact layer 12 is provided between 13 and first substrate 1 of n-type electrode；
P-type ohmic contact layer 17 is provided between p-type electrode 18 and conductive membrane layer 16.
In the embodiment of the present invention, conductive membrane layer 16 is grown on a surface of the second substrate 15, conductive membrane layer 16 selects
With good conductivity, the superior grapheme material of heat dissipation effect, and continue to be provided with external p on the surface of conductive membrane layer 16
Type electrode 18.Specifically, the pretreatments such as the cleaning of the embodiment of the present invention by carrying out early period to the second substrate 15, to remove second
The pollutant on 15 surface of substrate.Then, on a surface of the second substrate 15, using MOCVD device, coating machine or magnetron sputtering
Equipment carries out the deposition processes of conductive membrane layer 16, is laid with the graphene film layer of individual layer；And the p in 15 side of the second substrate
Type ohmic contact layer also continues to be provided with electrode contact layer structure on 17 surface, forms external p-type electrode 18.The present invention is implemented
Example preferably improves the quality of materials in deep ultraviolet LED epitaxial layer structures by extraly setting more than graphene layer.
In the embodiment of the present invention, the first substrate 1 is miniature nano-patterned sapphire substrate；
Second substrate 15 is miniature nano graph silicon substrate.
What the first substrate 1 was selected is the Sapphire Substrate in c faces, by pre- into cleaning, high-temperature baking etc. to Sapphire Substrate
Processing, to remove the pollutant on 1 surface of the first substrate.Meanwhile using techniques such as mask, photoetching, surface is prepared with miniature
The Sapphire Substrate structure of nanometer hole pattern.
In the embodiment of the present invention, what miniature nano graph silicon substrate was selected is the silicon substrate of good conductivity, using standard
Semiconductor silicon preparation process while, in conjunction with the techniques such as impurity diffusion, doping and its ion implantation, silicon substrate is set
For p-type silicon substrate or intrinsic silicon substrate, meanwhile, also using techniques such as mask, photoetching, surface is prepared with miniature nanometer
Hole pattern silicon substrate effectively alleviates the stress between LED epitaxial layer structures.
The embodiment of the present invention is first by the way that the inversion of the silicon substrate prepared epitaxial layer structure is come, then in
The bonding in portion directly tips upside down on the silicon substrate epitaxial layer structure after inversion on Sapphire Substrate ultraviolet LED epitaxial layer structure, into
And complete the electrical connection process of both the above epitaxial layer structure.Meanwhile it is carried out by the LED epitaxial chips after para-linkage internal
The vapor deposition treatment of electrode and external electrode is finally respectively provided with the p-type electrode and n-type electrode of multiple outsides at both ends, into
And form a kind of vertical inverted structure of LED epitaxial chips.
In the embodiment of the present invention, by using techniques such as photoetching, dry etching or wet etchings, served as a contrast from the sapphire of bottom
Bottom starts to perform etching the first epitaxial layer structure or hollow processing, forms inclined groove structure together, to carry out internal n
The preparation of type electrode contact structure.Wherein, inclined groove structure at setting 2 at equal intervals, etching depth is from the indigo plant at top
Jewel substrate starts to etch from lower to upper until exposing N-shaped AlGaN layer 4.By strictly controlling the quarter in etching process
Lose rate, it is ensured that only Sapphire Substrate and buffering layer region are etched completely, it is preferred that N-shaped AlGaN layer 4 is not carved
Erosion or partial etching processing, reduce damage of the deep etching process to light-emitting zone in epitaxial chip, improve LED extension cores
The light output intensity of piece；Meanwhile groove structure is shaped to trapezium structure, effectively alleviates high current density at electrode
Injection caused by impact damage.
The embodiment of the present invention is during internal electrode contact structures are prepared, also by first to inclined groove structure
Inner wall carry out annular passivation, insulation processing, toward groove structure inside first fill insulating dielectric materials and then form a kind of isolation
Layer structure；Then it fills metal or alloy material inside again, forms corresponding interior contact electrode, form a kind of inclined gold
Belong to stud structure.Then, setting and the corresponding external electrode of interior contact electrode on ohmic contact layer, and set multiple outer
The other end of portion's electrode is then connected with the metal wiring layer in external substrate heat spreader structures.Wherein, external electrode is being carried out
Deposition, vapor deposition when, external p-type electrode 18 and n-type electrode 13 are carried out by using surface film graphical treatment technology
Roughening treatment, and optimize the mode and bond strength of its Ohmic contact, in conjunction with transparent electrode technology of preparing and optimization electrode
The face contact material type at place, and then the good Au/Sn alloys of thermal conductivity are selected as electrode contact material, timely and effectively
By the heat transfer inside deep ultraviolet LED epitaxial wafer to outside, and then the effective area of contact electrode is increased, reduce contact
Resistance so that current distribution evenly, current expansion it is more effective.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of ultraviolet LED vertical chip structure, which is characterized in that including：The n-type electrode that sets gradually, the first substrate, first
Epitaxial layer and p-type electrode；
First epitaxial layer includes the buffering and nucleating layer being sequentially overlapped, AlN/AlGaN superlattices and N-shaped AlGaN layer；
The buffering and nucleating layer are superimposed with first substrate；
The buffering and the BN layers that nucleating layer is heterojunction structure；
First substrate is miniature nano-patterned sapphire substrate.
2. ultraviolet LED vertical chip structure according to claim 1, which is characterized in that further include：Second epitaxial layer；
Quantum well active district, electronic barrier layer, p-type AlGaN layer and the p-type GaN that second epitaxial layer includes being sequentially overlapped cover
Cap rock；
Second epitaxial layer is set between first epitaxial layer and the p-type electrode；
The Quantum well active district is superimposed with the N-shaped AlGaN layer.
3. ultraviolet LED vertical chip structure according to claim 2, which is characterized in that second epitaxial layer is provided with
Gap；
The gap is through the Quantum well active district, the electronic barrier layer, the p-type AlGaN layer and the p-type GaN
Coating；
The gap is nano size voids, and the width of the nano size voids is covered by the Quantum well active district to the p-type GaN
Cap rock becomes larger successively.
4. ultraviolet LED vertical chip structure according to claim 2, which is characterized in that further include：Second substrate；
Second substrate is set to by articulamentum between second epitaxial layer and the p-type electrode.
5. ultraviolet LED vertical chip structure according to claim 4, which is characterized in that second substrate is towards the p
The surface of type electrode is superimposed with conductive membrane layer；
The conductive membrane layer is graphene layer.
6. ultraviolet LED vertical chip structure according to claim 4, which is characterized in that the articulamentum and described second
Thin film reflective layer and hanging conductive layer are superimposed between epitaxial layer；
The thin film reflective layer and articulamentum contact；
The flying leads layer and p-type GaN coatings contact.
7. ultraviolet LED vertical chip structure according to claim 1, which is characterized in that first substrate, the buffering
And nucleating layer and the AlN/AlGaN superlattices setting it is fluted；
The groove is through first substrate, the buffering and nucleating layer and the AlN/AlGaN superlattices；
The groove is trapezoidal groove.
8. ultraviolet LED vertical chip structure according to claim 7, which is characterized in that be provided in the trapezoidal groove
Separation layer and metal bolt；
The separation layer is surrounded on the metal bolt.
9. ultraviolet LED vertical chip structure according to claim 5, which is characterized in that the n-type electrode and described first
N-shaped ohmic contact layer is provided between substrate；
P-type ohmic contact layer is provided between the p-type electrode and the conductive membrane layer.
10. ultraviolet LED vertical chip structure according to claim 4, which is characterized in that second substrate is received to be miniature
Rice patterned silicon substrate.
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| CN109545928B (en) * | 2018-12-27 | 2020-10-23 | 广东工业大学 | Deep ultraviolet LED epitaxial chip normal mounting structure |
| CN116581190A (en) * | 2023-07-13 | 2023-08-11 | 太原国科半导体光电研究院有限公司 | Superlattice array infrared detector chip and preparation method |
| CN116581190B (en) * | 2023-07-13 | 2023-09-26 | 太原国科半导体光电研究院有限公司 | Superlattice array infrared detector chip and preparation method |
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