CN109378367A - A kind of light emitting diode and preparation method thereof - Google Patents
A kind of light emitting diode and preparation method thereof Download PDFInfo
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- CN109378367A CN109378367A CN201811278391.8A CN201811278391A CN109378367A CN 109378367 A CN109378367 A CN 109378367A CN 201811278391 A CN201811278391 A CN 201811278391A CN 109378367 A CN109378367 A CN 109378367A
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052594 sapphire Inorganic materials 0.000 claims description 16
- 239000010980 sapphire Substances 0.000 claims description 16
- 230000035807 sensation Effects 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
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- 235000009566 rice Nutrition 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 10
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 3
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- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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Abstract
The invention discloses a kind of light emitting diode, the light emitting diode includes intrinsic GaN layer, and the intrinsic GaN layer has hole, and air can the free flow in the hole.The present invention by light emitting diode intrinsic GaN layer manufacture air can free flow hole, element is taken out of naturally using the heat that the mobility of air generates element at work, compare the prior art, heat-conducting medium (i.e. air) in the present invention is directly contacted with the heating part of LED element, greatly improve radiating efficiency, element built-in thermal stress is set to be more evenly distributed, extend LED life, simultaneously, electrons and holes radiation recombination efficiency can be improved in quantum well structure, i.e. the luminous efficiency of element rises, simultaneously, the epitaxial layer structure that the present invention directly improves LED achievees the purpose that heat dissipation, not needing the later period external adds new radiator structure, reduce production cost.Invention also provides a kind of production methods of light emitting diode with above-mentioned beneficial effect.
Description
Technical field
The present invention relates to light emitting semiconductor device fields, more particularly to a kind of light emitting diode and preparation method thereof.
Background technique
Basis of the semiconductor as photoelectronic industry has strong influence to the development of photoelectronic industry.Semi-conductor electricity
Sub- device has been played a greater and greater role in social production practice, and wherein GaN base semiconductor is referred to as after first generation Si
With the third generation semiconductor material of second generation GaAs.Third generation semiconductor has forbidden bandwidth big, and electron drift velocity is fast, dielectric
The advantages that constant is small, good heat conductivity.But it is increasingly mature with third generation semiconductor photoelectronic device technology, need to be captured
Problem more seem difficult.
In general, whether LED light work is stable, and quality quality radiates most important with lamp body itself, if LED is not
Can radiate very well, its service life also can be impacted, current main heat sink mode includes: aluminium radiating fin, heat-conducting plastic shell, table
The technologies such as surface radiation processing, air hydrodynamics, fan, heat conducting pipe, liquid ball bubble.But these technologies are not from chip itself
It is solved in structure, it is ineffective, and it is required to addition new construction, the cost of later period production is increased, simultaneously as existing
Radiator structure in technology is arranged in from the farther away outside of the luminous component of element, therefore the internal heat of the luminous component of element
It cannot exhale in time, compel to elevate the temperature, it is compound several that temperature raising will cause electronics and hole radiative in quantum well structure
Rate reduces, i.e., element luminous efficiency declines.
Summary of the invention
The object of the present invention is to provide a kind of light emitting diodes and preparation method thereof, to solve from diode self structure
Operational heat problem, reduces production cost, and improving radiating effect extends component life, while improving electronics in quantum well structure
With hole radiative recombination probability, lift elements luminous efficiency.
In order to solve the above technical problems, the present invention provides a kind of light emitting diode, it is followed successively by into outward from Sapphire Substrate
Stratum nucleare, rough layer, first intrinsic semiconductor layer, N-type GaN layer, quantum well structure, the second intrinsic semiconductor layer and p-type GaN layer,
The light emitting diode includes intrinsic GaN layer, and the intrinsic GaN layer has hole, and air can the free flow in the hole；
The intrinsic GaN layer is arranged between the first intrinsic semiconductor layer and the N-type GaN layer.
Optionally, in above-mentioned light emitting diode, the intrinsic GaN layer includes GaN column area and GaN corresponding circle of sensation；
GaN column area includes the GaN column arranged by predetermined pattern；
The GaN corresponding circle of sensation is plate GaN structure.
Optionally, in above-mentioned light emitting diode, the length and wide range of the GaN column are 1.8 microns to 2.2 micro-
Rice, including endpoint value.
Optionally, in above-mentioned light emitting diode, the spacing range between the adjacent GaN column is 500 nanometers to 600
Nanometer, including endpoint value.
Optionally, in above-mentioned light emitting diode, the altitude range of the GaN column is 15 microns to 50 microns, including
Endpoint value.
Optionally, in above-mentioned light emitting diode, the thickness range of the intrinsic GaN layer is 200 microns to 300 microns,
Including endpoint value.
The present invention also provides a kind of production methods of light emitting diode, comprising:
By Sapphire Substrate high annealing；
Nucleating layer, rough layer and the first intrinsic semiconductor are set gradually in the sapphire substrate surface of annealed processing
Layer；
On the first intrinsic semiconductor layer surface, intrinsic GaN layer is set；
The intrinsic GaN layer is performed etching, formed air can free flow hole；
N-type GaN layer is set gradually on the intrinsic GaN layer surface through over etching, quantum well structure, second intrinsic is partly led
Body layer and p-type GaN layer.
Optionally, described that the intrinsic GaN layer is performed etching in the production method of above-mentioned light emitting diode, it is formed
Air can the hole of free flow include:
GaN column, referred to as GaN column area are etched in the intrinsic GaN layer by predetermined pattern, are formed between adjacent columns
Air can free flow hole；
Make the GaN the upper end of the column cross growth, it is final to merge, GaN corresponding circle of sensation is formed, described through over etching is obtained
Levy GaN layer.
Optionally, in the production method of above-mentioned light emitting diode, the range of the growth time of the intrinsic GaN layer is 50
Minute to 60 minutes, including endpoint value.
Optionally, in the production method of above-mentioned light emitting diode, environment temperature of the GaN corresponding circle of sensation in growth
Range is 800 degrees Celsius to 850 degrees Celsius, including endpoint value.
Light emitting diode provided by the present invention is followed successively by nucleating layer, rough layer, first intrinsic from Sapphire Substrate outward
Semiconductor layer, N-type GaN layer, quantum well structure, the second intrinsic semiconductor layer and p-type GaN layer, the light emitting diode include this
GaN layer is levied, the intrinsic GaN layer has hole, and air can the free flow in the hole；The intrinsic GaN layer setting exists
Between the first intrinsic semiconductor layer and the N-type GaN layer.The present invention passes through the intrinsic GaN layer manufacture in light emitting diode
Air can free flow hole, take member out of naturally using the heat that the mobility of air generates element at work
Part, compares the prior art, and the heat-conducting medium (i.e. air) in the present invention is directly contacted with the heating part of LED element, do not needed
It is conducted by other structures, greatly improves radiating efficiency, meanwhile, so that element built-in thermal stress is more evenly distributed, element is less
It is easy to damage, LED life is extended, in addition to this, due to the raising of radiating efficiency, electrons and holes radiation is multiple in quantum well structure
Closing efficiency can be improved, i.e., the luminous efficiency of element rises, in addition, the epitaxial layer structure that the present invention directly improves LED reaches
The purpose of heat dissipation, not needing the later period external adds new radiator structure, reduces production cost.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present invention or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structural schematic diagram of LED in the prior art；
Fig. 2 is the structural schematic diagram of light emitting diode provided by a kind of specific embodiment of the invention；
Fig. 3 is the structural schematic diagram of light emitting diode provided by another specific embodiment of the invention；
Fig. 4 is that the structure of the intrinsic GaN layer of light emitting diode provided by another specific embodiment of the invention is shown
It is intended to；
Fig. 5 is the process signal of the production method of light emitting diode provided by a kind of specific embodiment of the invention
Figure；
Fig. 6 is the process signal of the production method of light emitting diode provided by another specific embodiment of the invention
Figure.
Specific embodiment
Fig. 1 is the structural schematic diagram of light emitting diode in the prior art, and each epitaxial layer is solid construction in figure, work
When the heat that generates be difficult to distribute, in general, whether LED light work stable, quality quality, with lamp body heat dissipation itself to closing weight
It wants, the heat dissipation of high-brightness LED lamp in the market, usually uses natural heat dissipation, specifically there is aluminium radiating fin, heat-conducting plastic shell, table
The technologies such as surface radiation processing, air hydrodynamics, fan, heat conducting pipe, liquid ball bubble, but the effect is unsatisfactory.
Heat concentrates in small-sized LED chip, LED chip temperature increase, cause thermal stress non-uniform Distribution,
Chip light emitting efficiency and the decline of phosphor powder lasing efficiency；When temperature is more than certain value, exponentially rule increases component failure rate.
Statistics shows every 2 DEG C of the rising of component temperature, reliability decrease 10%.When multiple LED dense arrangements form white-light illuminating system
When system, the dissipation issues of heat are more serious.Solve the prerequisite that thermal management issues have become high-brightness LED application.Therefore
If LED cannot radiate very well, its service life also can seriously be affected.
In order to enable those skilled in the art to better understand the solution of the present invention, with reference to the accompanying drawings and detailed description
The present invention is described in further detail.Obviously, described embodiments are only a part of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
Core of the invention is to provide a kind of light emitting diode, the structural schematic diagram of specific embodiment one such as Fig. 2 institute
Show:
The light emitting diode is followed successively by nucleating layer 102, rough layer 103, first intrinsic half from Sapphire Substrate 101 outward
Conductor layer 104, N-type GaN layer 106, quantum well structure 107, the second intrinsic semiconductor layer 108 and p-type GaN layer 109, it is described to shine
Diode includes intrinsic GaN layer 105, and the intrinsic GaN layer 105 has hole, and air can the free flow in the hole；
The intrinsic GaN layer 105 is arranged between the first intrinsic semiconductor layer 104 and the N-type GaN layer 106.
Above-mentioned nucleating layer 102 is the preparation work grown before rough layer 103, is a part of epitaxial layer, grows nucleating layer
102 can make 103 lattice structure of rough layer more preferable.
As shown in Fig. 2, ellipse provided with the above-mentioned intrinsic GaN layer 105 of three lateral direction penetratings inside above-mentioned intrinsic GaN layer 105
Circular through hole, certainly, the hole referred in present embodiment can be one, be also possible to it is multiple, can be rule it is several
What shape, is also possible to irregular shape, however, how, all should ensure that air can free flow wherein, the structure of Fig. 2 is only
An example does not represent all situations of present embodiment.
Above-mentioned N-type GaN layer 106 with a thickness of 2.5 microns, certainly, can also adjust accordingly according to the actual situation.
Above-mentioned intrinsic GaN belongs to intrinsic semiconductor, and intrinsic semiconductor is to be entirely free of impurity and without the pure of lattice defect
Semiconductor, however in a practical situation, it is difficult to accomplish the complete pure of semiconductor material, therefore, intrinsic semiconductor also refers to that it is led
The pure semiconductor that electric energy power is mainly determined by the intrinsic excitation of material.
Light emitting diode provided by the present invention is followed successively by nucleating layer 102, rough layer from Sapphire Substrate 101 outward
103, first intrinsic semiconductor layer 104, N-type GaN layer 106, quantum well structure 107, the second intrinsic semiconductor layer 108 and p-type GaN
Layer 109, the light emitting diode includes intrinsic GaN layer 105, and the intrinsic GaN layer 105 has hole, and air can be in the hole
Free flow in gap；The intrinsic GaN layer 105 setting the first intrinsic semiconductor layer 104 and the N-type GaN layer 106 it
Between.The present invention by light emitting diode intrinsic GaN layer 105 manufacture air can free flow hole, utilize the stream of air
The heat that dynamic property generates element at work takes element out of naturally, compares the prior art, the heat-conducting medium in the present invention
(i.e. air) is directly contacted with the heating part of LED element, does not need to conduct by other structures, greatly improves heat dissipation effect
Rate, meanwhile, so that element built-in thermal stress is more evenly distributed, element is less damaged, LED life is extended, in addition to this, due to
The raising of radiating efficiency, electrons and holes radiation recombination efficiency can be improved in quantum well structure 107, i.e. the luminous effect of element
Rate rises, in addition, the epitaxial layer structure that the present invention directly improves LED achievees the purpose that heat dissipation, does not need the later period in outside addition
New radiator structure, reduces production cost.
On the basis of specific embodiment one, further the size shape of hole is limited, obtains specific embodiment party
Formula two, structural schematic diagram is as shown in Figure 3 and Figure 4:
The light emitting diode is followed successively by nucleating layer 102, rough layer 103, first intrinsic half from Sapphire Substrate 101 outward
Conductor layer 104, N-type GaN layer 106, quantum well structure 107, the second intrinsic semiconductor layer 108 and p-type GaN layer 109, it is described to shine
Diode includes intrinsic GaN layer 105, and the intrinsic GaN layer 105 has hole, and air can the free flow in the hole；
The intrinsic GaN layer 105 is arranged between the first intrinsic semiconductor layer 104 and the N-type GaN layer 106；
The intrinsic GaN layer 105 includes GaN column area 1051 and GaN corresponding circle of sensation 1052；
GaN column area 1051 includes the GaN column arranged by predetermined pattern；
The GaN corresponding circle of sensation 1052 is plate GaN structure.
The examination of this specific embodiment party with specific embodiment one the difference is that, further the shape of above-mentioned hole is made
It limits, rest part is identical with specific embodiment one, details are not described herein.
The length and wide range of above-mentioned GaN column are 1.8 microns to 2.2 microns, including endpoint value, such as 1.80 microns,
Any of 2.00 microns 2.20 microns of fire.
The range of the height of above-mentioned GaN column is 15 microns to 50 microns, including endpoint value, such as 15.0 microns, 17.0 micro-
Rice or any of 50.0 microns.
Above-mentioned GaN column, the range of the distance between two neighboring GaN column is 500 nanometers to 600 nanometers, including endpoint
Value, such as any of 500.0 nanometers, 555.5 nanometers or 600.0 nanometers.
It is especially noted that because aperture is carried out to above-mentioned intrinsic GaN layer 105, so that air can in the present invention
It is flowed between above-mentioned hole, does not influence lumination of light emitting diode after hole is set for guarantee and hole wants enough ambassador's air that can lead to
It crosses, the above-mentioned intrinsic GaN layer 105 in the present invention compares intrinsic GaN layer 105 in the prior art, and thickness increased, the present invention
In the thickness range of intrinsic GaN layer 105 be specially 200 microns to 300 microns, including endpoint value, such as 200.0 microns, 250.5
Micron or any of 300.0 microns.
Fig. 4 is the structural schematic diagram of intrinsic GaN layer 105 in present embodiment, and above-mentioned intrinsic GaN layer 105 is by above-mentioned
GaN column area 1051 and above-mentioned GaN corresponding circle of sensation 1052 are constituted, and above-mentioned GaN corresponding circle of sensation 1052 is the solid slab without any hole
Shape structure.
Present embodiment specifically defines pore shape, and for the hole moulding divided by column, process is convenient,
Air be obstructed wherein it is smaller, and with the contact surface of air be evenly distributed on above-mentioned intrinsic GaN everywhere, make heat dissipation more evenly,
Avoid the problem of temperature unevenness causes thermal stress distribution unevenness to lead to component wear everywhere.
The present invention also provides a kind of production method of light emitting diode, referred to as specific embodiment three, process signals
Figure is as shown in Figure 5, comprising:
Step S101: by 101 high annealing of Sapphire Substrate.
Step S102: nucleating layer 102, rough layer are set gradually on 101 surface of the Sapphire Substrate of annealed processing
103 and first intrinsic semiconductor layer 104.
The detailed process of above-mentioned setting nucleating layer 102 is to deposit (MOCVD) method by Metallo-Organic Chemical Vapor and exist
It is grown 3 minutes in 650 degrees Celsius of environment, certainly, above-mentioned temperature and time can adjust accordingly according to the actual situation.
The detailed process of above-mentioned setting rough layer 103 is, by mocvd method at 950 degrees Celsius
Environment in grow 15 minutes, certainly, above-mentioned temperature and time can adjust accordingly according to the actual situation.
The detailed process of above-mentioned setting first intrinsic semiconductor layer 104 is to pass through mocvd method
It is grown 15 minutes in 1050 degrees Celsius of environment, certainly, above-mentioned temperature and time can adjust accordingly according to the actual situation.
Step S103: intrinsic GaN layer 105 is set on 104 surface of first intrinsic semiconductor layer.
Above-mentioned intrinsic GaN layer 105 can specifically be obtained by the method for hydride gas-phase epitaxy (HVPE), and GaN is in hydride
The speed grown in vapour phase epitaxy is much larger than other methods, can save the time, improve efficiency.
The range of the growth time of above-mentioned intrinsic GaN layer 105 is 50 minutes to 60 minutes, including endpoint value, such as 50.0 points
Clock, 55.3 minutes fire any of 60.0 minutes.
The range of bosom static temperature degree of the above-mentioned intrinsic GaN layer 105 in growth is 800 degrees Celsius to 850 degrees Celsius, including end
Point value, such as any of 800.0 degrees Celsius, 825.0 degrees Celsius or 850.0 degrees Celsius.
Step S104: performing etching the intrinsic GaN layer 105, formed air can free flow hole.
Step S105: N-type GaN layer 106, Quantum Well knot are set gradually on intrinsic 105 surface of GaN layer through over etching
Structure 107, the second intrinsic semiconductor layer 108 and p-type GaN layer 109.
The detailed process of above-mentioned setting N-type GaN layer 106 is to be taken the photograph by mocvd method 1050
It is grown 60 minutes in the environment of family name's degree, certainly, above-mentioned temperature and time can adjust accordingly according to the actual situation.
Above-mentioned quantum well structure 107 is the InGaN layer and GaN layer of the alternating growth in 5 periods；Wherein, above-mentioned InGaN layer
Specific setting up procedure is to be grown 3 minutes in 700 degrees Celsius of environment by mocvd method；It is above-mentioned
The specific setting up procedure of GaN layer is that 7 points are grown in 850 degrees Celsius of environment by mocvd method
Clock, certainly, above-mentioned temperature and time can adjust accordingly according to the actual situation.
The detailed process of above-mentioned the second intrinsic semiconductor layer of setting 108 is to pass through mocvd method
It is grown 15 minutes in 900 degrees Celsius of environment, certainly, above-mentioned temperature and time can adjust accordingly according to the actual situation.
The detailed process of above-mentioned setting p-type GaN layer 109 is to be taken the photograph by mocvd method 1000
It is grown 20 minutes in the environment of family name's degree, certainly, above-mentioned temperature and time can adjust accordingly according to the actual situation.
The production method of light emitting diode provided by the present invention, by by 101 high annealing of Sapphire Substrate；Through moving back
101 surface of the Sapphire Substrate of fire processing sets gradually nucleating layer 102, rough layer 103 and first intrinsic semiconductor layer
104；On 104 surface of first intrinsic semiconductor layer, intrinsic GaN layer 105 is set；The intrinsic GaN layer 105 is performed etching,
Formed air can free flow hole；Intrinsic 105 surface of GaN layer through over etching set gradually N-type GaN layer 106,
Quantum well structure 107, the second intrinsic semiconductor layer 108 and p-type GaN layer 109.The present invention passes through in the intrinsic of light emitting diode
GaN layer 105 manufacture air can free flow hole, the heat for being generated element at work using the mobility of air is natural
And so take element out of, the prior art is compared, the heating part of heat-conducting medium (i.e. air) and LED element in the present invention directly connects
Touching, does not need to conduct by other structures, greatly improves radiating efficiency, meanwhile, so that element built-in thermal stress is more evenly distributed,
Element is less damaged, extends LED life, in addition to this, due to the raising of radiating efficiency, electronics in quantum well structure 107
It can be improved with hole radiative combined efficiency, i.e., the luminous efficiency of element rises, in addition, the present invention directly improves the outer of LED
Prolong a layer structure and achieve the purpose that heat dissipation, not needing the later period external adds new radiator structure, reduces production cost.
On the basis of specific embodiment three, further etching is defined, obtains specific embodiment four, is flowed
Journey schematic diagram is as shown in Figure 6, comprising:
Step S201: by 101 high annealing of Sapphire Substrate.
Step S202: nucleating layer 102, rough layer are set gradually on 101 surface of the Sapphire Substrate of annealed processing
103 and first intrinsic semiconductor layer 104.
Step S203: intrinsic GaN layer 105 is set on 104 surface of first intrinsic semiconductor layer.
Step S204: GaN column, referred to as GaN column area are etched in the intrinsic GaN layer 105 by predetermined pattern
1051, formed between adjacent columns air can free flow hole；Make the GaN the upper end of the column cross growth, final to merge, shape
At GaN corresponding circle of sensation 1052, the intrinsic GaN layer 105 through over etching is obtained.
The method of above-mentioned setting GaN corresponding circle of sensation 1052 is specifically, pass through hydride for the substrate for etching good above-mentioned GaN column
The method of vapour phase epitaxy makes its cross growth, merges the gap of above-mentioned GaN the upper end of the column, finally obtains above-mentioned GaN corresponding circle of sensation
1052。
Step S205: N-type GaN layer 106, Quantum Well knot are set gradually on intrinsic 105 surface of GaN layer through over etching
Structure 107, the second intrinsic semiconductor layer 108 and p-type GaN layer 109.
This specific embodiment party try compared with specific embodiment three, define etching hole process, remaining step with
Specific embodiment three is identical, and details are not described herein.
Present embodiment specifically defines the production method of hole, first etches GaN in above-mentioned intrinsic GaN layer 105
Column, then allow above-mentioned GaN column top cross growth, it joins together, whole process is convenient, column knot of the air in formation
Between structure by when in be obstructed it is smaller, and with the contact surface of air be evenly distributed on above-mentioned intrinsic GaN everywhere, make heat dissipation it is more equal
It is even, avoid the problem of temperature unevenness causes thermal stress distribution unevenness to lead to component wear everywhere.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part
Explanation.
Light emitting diode provided by the present invention and preparation method thereof is described in detail above.It is used herein
A specific example illustrates the principle and implementation of the invention, and the above embodiments are only used to help understand originally
The method and its core concept of invention.It should be pointed out that for those skilled in the art, not departing from this hair
, can be with several improvements and modifications are made to the present invention under the premise of bright principle, these improvement and modification also fall into power of the present invention
In the protection scope that benefit requires.
Claims (10)
1. a kind of light emitting diode is followed successively by nucleating layer, rough layer, first intrinsic semiconductor layer, N-type from Sapphire Substrate outward
GaN layer, quantum well structure, the second intrinsic semiconductor layer and p-type GaN layer, which is characterized in that the light emitting diode includes intrinsic
GaN layer, the intrinsic GaN layer have hole, and air can the free flow in the hole；
The intrinsic GaN layer is arranged between the first intrinsic semiconductor layer and the N-type GaN layer.
2. light emitting diode as described in claim 1, which is characterized in that the intrinsic GaN layer includes GaN column area and GaN
Corresponding circle of sensation；
GaN column area includes the GaN column arranged by predetermined pattern；
The GaN corresponding circle of sensation is plate GaN structure.
3. light emitting diode as claimed in claim 2, which is characterized in that the length and wide range of the GaN column are 1.8 micro-
Rice is to 2.2 microns, including endpoint value.
4. light emitting diode as claimed in claim 3, which is characterized in that the spacing range between the adjacent GaN column is
500 nanometers to 600 nanometers, including endpoint value.
5. light emitting diode as claimed in claim 4, which is characterized in that the altitude range of the GaN column be 15 microns extremely
50 microns, including endpoint value.
6. such as light emitting diode described in any one of claim 1 to 5, which is characterized in that the thickness range of the intrinsic GaN layer
For 200 microns to 300 microns, including endpoint value.
7. a kind of production method of light emitting diode characterized by comprising
By Sapphire Substrate high annealing；
Nucleating layer, rough layer and first intrinsic semiconductor layer are set gradually in the sapphire substrate surface of annealed processing；
On the first intrinsic semiconductor layer surface, intrinsic GaN layer is set；
The intrinsic GaN layer is performed etching, formed air can free flow hole；
N-type GaN layer, quantum well structure, the second intrinsic semiconductor layer are set gradually on the intrinsic GaN layer surface through over etching
And p-type GaN layer.
8. the production method of light emitting diode as claimed in claim 7, which is characterized in that it is described to the intrinsic GaN layer into
Row etching, formed air can the hole of free flow include:
GaN column, referred to as GaN column area are etched in the intrinsic GaN layer by predetermined pattern, form air between adjacent columns
Can free flow hole；
Make the GaN the upper end of the column cross growth, it is final to merge, GaN corresponding circle of sensation is formed, is obtained described intrinsic through over etching
GaN layer.
9. the production method of light emitting diode as claimed in claim 8, which is characterized in that when the growth of the intrinsic GaN layer
Between range be 50 minutes to 60 minutes, including endpoint value.
10. the production method of light emitting diode as claimed in claim 9, which is characterized in that the GaN corresponding circle of sensation is in growth
The range of environment temperature be 800 degrees Celsius to 850 degrees Celsius, including endpoint value.
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