CN104882520A - Epitaxial structure of coarsened LED chip, and manufacturing method thereof - Google Patents
Epitaxial structure of coarsened LED chip, and manufacturing method thereof Download PDFInfo
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- CN104882520A CN104882520A CN201410079731.XA CN201410079731A CN104882520A CN 104882520 A CN104882520 A CN 104882520A CN 201410079731 A CN201410079731 A CN 201410079731A CN 104882520 A CN104882520 A CN 104882520A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention relates to an epitaxial structure of a coarsened LED chip, and a manufacturing method of the epitaxial structure. The manufacturing method comprises the steps that: an n-GaAs buffer layer, a DBR, lower limiting layer, an active region, an upper limiting layer, a tunnel junction, a coarsening layer and cap layers grow sequentially on an n-GaAs substrate; an electrode is evaporated on the cap layers in chip manufacturing, an electrode pattern is formed through photoetching, and redundant cap layers are removed; the coarsening layer is directly coarsened by using a wet method without utilizing a mask, the n-GaAs substrate is thinned, backside gold is evaporated, and an LED chip with coarsened surface and high light extraction efficiency is manufactured through alloying, testing and cutting in sequence. The problem that a window layer of a traditional LED epitaxial wafer is GaP and difficult to etch is overcome, the coarsened layer is adopted to replace the GaP window layer, the epitaxial structure has the advantages that the coarsened layer is very easy to coarsen, the coarsening is uniform and the stability is good, and is very suitable for scale production. The coarsened LED chip manufactured by utilizing the method provided by the invention can increase the light emitting efficiency by about 40%.
Description
Technical field
The present invention relates to epitaxial structure of a kind of alligatoring LED chip and preparation method thereof, belong to light-emitting diode manufacturing technology field.
Background technology
Early stage with generation nineteen ninety in 1980, AlGaInP quaternary III-V material becomes the focus of people's research, the feature of AlGaInP quaternary III-V material is AlGaInP is direct gap material, and the value of direct gap can change along with the change of material component, can covering visible light scope.The component of suitable adjustment AlGaInP quaternary III-V material, this material can match with GaAs substrate, is therefore extensively paid close attention to by people.Especially along with the development of MOCVD technology in recent years, AlGaInP quaternary III-V material becomes the main material of the ruddiness (625nm) of high brightness, orange light (610nm), gold-tinted (590nm) and green-yellow light (570nm) LED.
Although AlGaInP quaternary III-V material is increasingly mature in the application of ruddiness, orange light, gold-tinted and green-yellow light LED as luminescent layer at present, but along with the continuous pursuit of people to luminous efficiency, how to strengthen LED external quantum efficiency, the bright dipping improving LED chip becomes the major subjects of people's research.What paid close attention to by people is total reflection phenomenon.When light is mapped to the little medium interface of refractive index from the medium that refractive index is large, all can the phenomenon of former medium by reflection, be called total reflection phenomenon.Utilize AlGaInP quaternary III-V material as the epitaxial wafer of luminescent layer at present, the general GaP that adopts in surface is as Window layer.The refractive index ratio of GaP material is higher (3.2), is far longer than air refraction (1).Therefore, if when the light that Window layer GaP launches incides the interface of GaP material and air, due to total reflection phenomenon, light can be limited in a semiconductor material, these restrictions light in a semiconductor material by the absorption such as substrate, light emitting region material, can greatly reduce the external quantum efficiency of LED.People also work out certain methods, overcome total reflection phenomenon, improve the external quantum efficiency of LED chip.
Chinese patent CN10228053B provides a kind of method that light assists the gallium phosphide Window layer wet method alligatoring of red-light LED.Utilize the mixed solution of hydrofluoric acid and oxidant by light floor light, corrosion gallium phosphide Window layer, realizes the surface coarsening of red-light LED.Although the present invention does not use mask, first light floor light alligatoring, proposes comparatively strict requirement to the illumination uniformity that light is assisted; Next is limited to the structural factor of epitaxial wafer own, and the corrosion of gallium phosphide material is comparatively difficult, corrosion rate and uniformity controlling more difficult; 3rd, make with the alligatoring of light floor light, there is optical attenuation problem in filler lighting light source, along with optical attenuation, alligatoring effect very easily changes and is not easy to discover, restriction large-scale production.
Chinese patent CN102593280A provides a kind of microspheres solution of dispersion that utilizes and mixes with alcohol, then by buffer monodispersed microballoon is transferred to the surface of deionized water and evenly scatters; Instillation surfactant changes the surface tension of water, and what make microballoon self assembly is Hexagonal Close-packed array, forms individual layer microballoon film; Individual layer microballoon film is transferred to LED surface heated sample, as etch mask till once fixing microballoon; Using the mask of processing as LED surface alligatoring pattern, promote LED luminous efficiency.The method uses mask, and mask preparation method is complicated, and poor stability, can not be applicable to large-scale production, and this patent uses the method for ICP etching cost higher.
Chinese patent CN10290386A provides a kind of method utilizing nanoscale ZnO to improve light extraction efficiency of LED, and it carries out nanoscale ZnO deposition by LED Window layer, to realize surface coarsening.The method makes chemically to deposit ZnO, and the firmness of ZnO and the uniformity of ZnO deposition are all restricted, especially the firmness of ZnO, through LED downstream industry encapsulation process, very easily causes the ZnO of deposition to come off.
Therefore, above method is not only limited to the material of the Window layer of epitaxial wafer own, and all there is different problems from cost, large-scale production and stability, is not suitable for stable, cheap, large-scale production.
Summary of the invention
Not enough according to prior art, the present invention proposes a kind of epitaxial structure of alligatoring LED chip.
The present invention also proposes a kind of preparation method of above-mentioned alligatoring LED chip epitaxial structure.
Summary of the invention:
First the present invention grows n-GaAs resilient coating, DBR, lower limit layer, active area, upper limiting layer, tunnel junctions, roughened layer and cap layer successively on n-GaAs substrate.Chip preparation is electrode evaporation on cap layer first, and photoetching electrode pattern, removes unnecessary cap layer simultaneously, by wet process, alligatoring is carried out to roughened layer, then thinning, evaporation back of the body gold, then successively through alloy, test, cutting, the LED chip of the highlight extract efficiency of surface coarsening is prepared.
Technical scheme of the present invention is as follows:
An epitaxial structure for alligatoring LED chip, its structure comprises n-GaAs substrate, n-GaAs resilient coating, DBR, lower limit layer, active area, upper limiting layer, tunnel junctions, roughened layer and cap layer from bottom to top successively.
Preferred according to the present invention, described lower limit layer is AlGaInP, AlInP III-V material system;
Preferred according to the present invention, described active area is AlGaInP material system;
Preferred according to the present invention, described upper limiting layer is AlGaInP, AlInP material system;
Preferred according to the present invention, described roughened layer is AlGaInP material system;
Preferred according to the present invention, described cap layer is GaAs, InGaAs III-V material system.
As the preparation method of the epitaxial structure of above-mentioned a kind of alligatoring LED chip, comprise the following steps:
(1) adopt metal organic chemical vapor deposition (MOCVD) method to grow n-GaAs resilient coating, DBR, lower limit layer, active area, upper limiting layer, tunnel junctions, roughened layer and cap layer successively from bottom to top on n-GaAs substrate, each layer thickness and doping content are all conventionally;
(2) adopt electron beam evaporation technique, underlayer temperature 100-200 DEG C, on cap layer, growth thickness is the metal level of 1-3 μm;
(3) with golden etching solution, step (2) described metal level is corroded, erode away electrode pattern, remove the cap layer beyond electrode pattern simultaneously;
(4) with photoetching method, alligatoring protection is carried out to step (3) described ohmic contact layer metal electrode figure;
(5) by the method for wet etching, roughened layer alligatoring is corroded, coarsening solution adopts HCl, H3PO4 or acetic acid solution, concentration proportioning is carried out according to alligatoring effect, use HCl: H2O series, H3PO4: H2O series or pure acetic acid, volume range 1: 1-1: 10, coarsening time 10-300s, removes photoresist after alligatoring;
(6) get rid of negative glue and after photoetching bonding wire dish metal layer image, evaporation bonding wire metal level, and peel off and remove photoresist;
(7) by the method for chemical reduction or mechanical reduction to substrate thinning;
(8) evaporation thickness is the back of the body gold of 0.5-1 μm;
(9) at 300 DEG C of-400 DEG C of temperature, alloy 10min-20min is carried out to back of the body gold;
(10) hemisection, test, cutting, obtain single LEDs chip.
Preferred according to the present invention, in described step (2), metal layer material is AuBe, TiAu, TiAl;
Preferred according to the present invention, in described step (4), photoetching method is photoresist mask method, SiO
2medium mask method;
Preferred according to the present invention, in described step (8), back of the body gold copper-base alloy is TiAu, GeAu.
Not elaborate in technique scheme of the present invention and to limit, all with reference to the prior art that light-emitting diode makes.
Beneficial effect of the present invention:
The present invention proposes a kind of LED structure being directly used in alligatoring, and this method does not utilize mask, directly carries out wet method alligatoring.Overcome the method that traditional LED Window layer is GaP difficulty etching, replace GaP Window layer with roughened layer, have that roughened layer very easily alligatoring, alligatoring are even, the good advantage of stability, be very applicable to large-scale production.The alligatoring LED chip utilizing the inventive method to make can improve the light extraction efficiency of about 40%.
Accompanying drawing explanation
Fig. 1 is the epitaxial structure schematic diagram of the LED chip that the present invention obtains.
In figure, 1, n-GaAs substrate; 2, n-GaAs resilient coating; 3, DBR; 4, lower limit layer; 5, active area; 6, upper limiting layer; 7, tunnel junctions; 8, roughened layer; 9, cap layer; 10, electrode; 11, back of the body gold.
Embodiment
Below in conjunction with embodiment and Figure of description, the present invention will be further described, but be not limited thereto.The material used in embodiment and equipment are prior art.
Embodiment 1,
As shown in Figure 1.An epitaxial structure for alligatoring LED chip, its structure comprises n-GaAs substrate 1, n-GaAs resilient coating 2, DBR3, lower limit layer 4, active area 5, upper limiting layer 6, tunnel junctions 7, roughened layer 8 and cap layer 9 from bottom to top successively.
Described lower limit layer 4 is AlGaInP material system;
Described active area 5 is AlGaInP material system;
Described upper limiting layer 6 is AlGaInP material system;
Described roughened layer 8 is AlGaInP material system;
Described cap layer 9 is GaAs material system.
Embodiment 2,
The epitaxial structure of a kind of alligatoring LED chip as described in Example 1, its difference is,
Described LED chip is SiC substrate flip LED chips;
Described lower limit layer 4 is AlInP material system;
Described upper limiting layer 6 is AlInP material system;
Described cap layer 9 is InGaAs material system.
Embodiment 3,
A preparation method for the epitaxial structure of alligatoring LED chip as described in Example 1, comprises the following steps:
(1) adopt metal organic chemical vapor deposition (MOCVD) method to grow n-GaAs resilient coating 2, DBR3, lower limit layer 4, active area 5, upper limiting layer 6, tunnel junctions 7, roughened layer 8 and cap layer 9 successively from bottom to top on n-GaAs substrate 1, each layer thickness and doping content are all conventionally;
(2) adopt electron beam evaporation technique, substrate 1 temperature 110 DEG C, on cap layer 9, growth thickness is the metal layer A uBe of 1 μm;
(3) with golden etching solution, step (2) described metal level is corroded, erode away electrode pattern, remove the cap layer 9 beyond electrode pattern simultaneously;
(4) mask method carries out alligatoring protection to step (3) described ohmic contact layer metal electrode figure with photoresist;
(5) corrode roughened layer 8 alligatoring by the method for wet etching, coarsening solution adopts HCl and H2O mixed liquor, and the volume ratio of HCl: H2O is 1: 1, and coarsening time 10s, removes photoresist after alligatoring;
(6) get rid of negative glue and after photoetching bonding wire dish metal layer image, evaporation bonding wire metal level, and peel off and remove photoresist;
(7) thinning to substrate 1 by the method for chemical reduction or mechanical reduction;
(8) evaporation thickness is the back of the body gold 11TiAu of 0.5 μm;
(9) at 300 DEG C, alloy 10min is carried out to the golden TiAu of the back of the body;
(10) hemisection, test, cutting, obtain single LEDs chip.
Embodiment 4,
A preparation method for the epitaxial structure of alligatoring LED chip as described in Example 3, its difference is,
In described step (2), substrate 1 temperature 200 DEG C, on cap layer 9, growth thickness is the metal level TiAu of 3 μm;
In described step (5), corrode roughened layer 8 alligatoring by the method for wet etching, coarsening solution adopts H3PO4 and H2O mixed liquor, and the volume ratio of H3PO4: H2O is 1: 9, and coarsening time 300s, removes photoresist after alligatoring;
In described step (8), evaporation thickness is the back of the body gold 11GeAu of 1 μm;
In described step (9), at 400 DEG C, alloy 20min is carried out to the golden GeAu of the back of the body.
Embodiment 5,
A preparation method for the epitaxial structure of alligatoring LED chip as described in Example 3, its difference is,
In described step (2), substrate 1 temperature 140 DEG C, on cap layer 9, growth thickness is the metal level TiAl of 2.2 μm;
In described step (4), use SiO
2medium mask method carries out alligatoring protection to step (3) described ohmic contact layer metal electrode figure;
In described step (5), corrode roughened layer 8 alligatoring by the method for wet etching, coarsening solution adopts acetic acid and H2O mixed liquor, and the volume ratio of acetic acid: H2O is 1: 6, and coarsening time 50s, removes photoresist after alligatoring;
In described step (8), evaporation thickness is the back of the body gold 11TiAu of 0.8 μm;
In described step (9), at 330 DEG C, alloy 15min is carried out to the golden TiAu of the back of the body.
Claims (10)
1. an epitaxial structure for alligatoring LED chip, is characterized in that, comprises n-GaAs substrate, n-GaAs resilient coating, DBR, lower limit layer, active area, upper limiting layer, tunnel junctions, roughened layer and cap layer from bottom to top successively.
2. the epitaxial structure of a kind of alligatoring LED chip according to claim 1, is characterized in that, described lower limit layer is AlGaInP, AlInP III-V material system.
3. the epitaxial structure of a kind of alligatoring LED chip according to claim 1, is characterized in that, described active area is AlGaInP material system.
4. the epitaxial structure of a kind of alligatoring LED chip according to claim 1, is characterized in that, described upper limiting layer is AlGaInP, AlInP material system.
5. the epitaxial structure of a kind of alligatoring LED chip according to claim 1, is characterized in that, described roughened layer is AlGaInP material system.
6. the epitaxial structure of a kind of alligatoring LED chip according to claim 1, is characterized in that, described cap layer is GaAs, InGaAs III-V material system.
7. a preparation method for the epitaxial structure of a kind of alligatoring LED chip as claimed in claim 1, comprises step as follows:
(1) adopt metal organic chemical vapor deposition (MOCVD) method to grow n-GaAs resilient coating, DBR, lower limit layer, active area, upper limiting layer, tunnel junctions, roughened layer and cap layer successively from bottom to top on n-GaAs substrate, each layer thickness and doping content are all conventionally;
(2) adopt electron beam evaporation technique, underlayer temperature 100-200 DEG C, on cap layer, growth thickness is the metal level of 1-3 μm;
(3) with golden etching solution, step (2) described metal level is corroded, erode away electrode pattern, remove the cap layer beyond electrode pattern simultaneously;
(4) with photoetching method, alligatoring protection is carried out to step (3) described ohmic contact layer metal electrode figure;
(5) by the method for wet etching, roughened layer alligatoring is corroded, coarsening solution adopts HCl, H3PO4 or acetic acid solution, concentration proportioning is carried out according to alligatoring effect, use HCl: H2O series, H3PO4: H2O series or pure acetic acid, volume range 1: 1-1: 10, coarsening time 10-300s, removes photoresist after alligatoring;
(6) get rid of negative glue and after photoetching bonding wire dish metal layer image, evaporation bonding wire metal level, and peel off and remove photoresist;
(7) by the method for chemical reduction or mechanical reduction to substrate thinning;
(8) evaporation thickness is the back of the body gold of 0.5-1 μm;
(9) at 300 DEG C of-400 DEG C of temperature, alloy 10min-20min is carried out to back of the body gold;
(10) hemisection, test, cutting, obtain single LEDs chip.
8. the preparation method of the epitaxial structure of a kind of alligatoring LED chip according to claim 7, is characterized in that, in described step (2), metal layer material is AuBe, TiAu, TiAl.
9. the preparation method of the epitaxial structure of a kind of alligatoring LED chip according to claim 7, is characterized in that, in described step (4), photoetching method is photoresist mask method, SiO
2medium mask method.
10. the preparation method of the epitaxial structure of a kind of alligatoring LED chip according to claim 7, is characterized in that, in described step (8), back of the body gold copper-base alloy is TiAu, GeAu.
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Cited By (5)
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| CN107482098A (en) * | 2017-09-20 | 2017-12-15 | 南昌大学 | A kind of film LED chip structure |
| CN108831977A (en) * | 2018-06-26 | 2018-11-16 | 山东浪潮华光光电子股份有限公司 | A kind of light emitting diode and preparation method thereof with Phototube Coupling roughened layer |
| WO2019024526A1 (en) * | 2017-08-01 | 2019-02-07 | 厦门三安光电有限公司 | Light emitting diode |
| CN110707192A (en) * | 2019-10-21 | 2020-01-17 | 扬州乾照光电有限公司 | High-brightness upright LED structure and manufacturing method thereof |
| CN111725365A (en) * | 2019-03-21 | 2020-09-29 | 山东浪潮华光光电子股份有限公司 | GaAs-based multi-junction yellow-green light LED and preparation method thereof |
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| CN111725365B (en) * | 2019-03-21 | 2021-06-08 | 山东华光光电子股份有限公司 | GaAs-based multi-junction yellow-green light LED and preparation method thereof |
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Application publication date: 20150902 |