CN203746891U

CN203746891U - Nitride-based light-emitting diode

Info

Publication number: CN203746891U
Application number: CN201420081947.5U
Authority: CN
Inventors: 董发; 李志翔; 吴东海; 詹润滋
Original assignee: NANTONG TONGFANG SEMICONDUCTOR CO Ltd; Tongfang Co Ltd
Current assignee: NANTONG TONGFANG SEMICONDUCTOR CO Ltd; Tsinghua Tongfang Co Ltd; Tongfang Co Ltd
Priority date: 2014-02-26
Filing date: 2014-02-26
Publication date: 2014-07-30
Anticipated expiration: 2024-02-26

Abstract

A nitride-based light-emitting diode relates to the field of a photoelectric technology. The nitride-based light-emitting diode provided by the utility model comprises a substrate and a light-emitting structure which is arranged above the substrate and is composed of an N-type GaN layer, a luminescent layer, a P-type GaN layer and a transparent conducting layer. A P-type electrode is arranged on the transparent conducting layer. The nitride-based light-emitting diode is characterized in that the bottom of the substrate is provided with an aperture penetrating to the N-type GaN layer; and an N-type electrode is arranged in the aperture and is placed on the undersurface of the N-type GaN layer. In comparison with the prior art, as the bottom of the substrate is provided with the aperture and the N-type electrode is arranged in the aperture in the utility model, etching damage to a luminous zone is reduced, and a lighting effect is enhanced by increasing the area of the luminous zone.

Description

A kind of gallium nitride based light emitting diode

Technical field

The utility model relates to field of photoelectric technology, particularly a kind of gallium nitride based light emitting diode.

Background technology

Light-emitting diode (Light Emitting Diode; LED) be a kind of light emitting semiconductor device that utilizes semi-conductive P-N junction electroluminescence principle to make.That LED has is pollution-free, high brightness, the advantage such as power consumption is little, the life-span is long, operating voltage is low, easy miniaturization.Since the nineties in 20th century, gallium nitride GaN base LED succeeded in developing, along with the continuous progress of research, its luminosity also improves constantly, and application is also more and more wider.

In prior art, conventional light emitting diode construction as shown in Figure 1, comprises substrate 1, N-type GaN layer 2, luminescent layer 3, P type GaN layer 4, transparency conducting layer 5, the P electrode 6 stacking gradually from lower to upper and be arranged on the N electrode 7 on N-type GaN layer 2 exposed surface.Because P electrode 6 and N electrode 7 electrode materials are generally Cr/Au, Au has absorption to light, makes the part light that luminescent layer 3 sends fail to emit, and causes light loss, affects chip light emitting efficiency.Due to making in N-type electrode process, need etched portions P type GaN layer 4, luminescent layer 3 and part N-type GaN layer 2, cause the etching injury of luminescent layer 3, reduce luminous zone area, affect luminous efficiency; While, because luminous zone area reduces, causes LED forward voltage also to rise.

Summary of the invention

For above-mentioned the deficiencies in the prior art, the purpose of this utility model is to provide a kind of gallium nitride based light emitting diode.It,, by settling N-type electrode in substrate bottom opening, reduces luminous zone etching injury, increases luminous zone area and promotes light efficiency.

In order to reach foregoing invention object, the technical solution of the utility model realizes as follows:

A kind of gallium nitride based light emitting diode, it comprises substrate and is placed in the ray structure that substrate top is made up of N-type GaN layer, luminescent layer, P type GaN layer and transparency conducting layer successively.On transparency conducting layer, be equipped with P type electrode.Its design feature is that hole is offered until N-type GaN layer is provided with N-type electrode and is placed in N-type GaN layer bottom surface in described hole in described substrate bottom.

In above-mentioned gallium nitride based light emitting diode, the diameter in described hole is 60-150um, and the height in hole is 80-200um.

In above-mentioned gallium nitride based light emitting diode, described hole is opened in substrate bottom centre position.

In above-mentioned gallium nitride based light emitting diode, described N-type electrode is full of hole, and the bottom surface of N-type electrode flushes with substrate bottom.

The utility model is owing to having adopted said structure, make N-type electrode without etched portions P type GaN layer and luminescent layer, but settle N-type electrode from substrate bottom opening to N-type GaN layer, reduce the absorption of electrode pair light, reduce the destruction to chip light emitting area, contribute to optimize chip current distribution situation, promote LED brightness, reduce LED voltage, thereby effectively promote the luminous efficiency of LED.Meanwhile, because Sapphire Substrate is difficult for heat radiation, the utility model also contributes to heat radiation in substrate bottom opening, increases yield.

Below in conjunction with the drawings and specific embodiments, the utility model is described further.

Brief description of the drawings

Fig. 1 is the structural representation of light-emitting diode in prior art;

Fig. 2 is the structural representation of the utility model light-emitting diode.

specific implementation method

Referring to Fig. 2, the utility model gallium nitride based light emitting diode comprises substrate 1 and is placed in the ray structure that substrate 1 top is made up of N-type GaN layer 2, luminescent layer 3, P type GaN layer 4 and transparency conducting layer 5 successively, is equipped with P type electrode 6 on transparency conducting layer 5.Substrate 1 bottom offers hole until N-type GaN layer 2 is provided with N-type electrode 7 and is placed in N-type GaN layer 2 bottom surface in described hole.The diameter in hole is 60-150um, and the height in hole is 80-200um, and hole is opened in substrate 1 bottom centre position.N-type electrode 7 is full of hole, and the bottom surface of N-type electrode 7 flushes with substrate 1 bottom.

The manufacture method of the utility model gallium nitride based light emitting diode is:

1) on substrate 1, adopt metal-organic chemical vapor deposition equipment technology epitaxial growth N-type GaN layer 2 respectively, luminescent layer 3 and P type GaN layer 4.

2) utilize evaporation coating technique to prepare transparency conducting layer and utilize exposure technique and lithographic technique is prepared P-type conduction layer ohmic contact regions.

3) utilize evaporation and exposure technique to prepare P type electrode 6.

4) by the gallium nitride based light emitting diode of above-mentioned preparation from substrate 1 thinning back side.

5) utilize CO ₂laser lithographic technique, from substrate 1 back-etching hole to N-type GaN layer 2.

6) utilize evaporation and exposure technique to prepare N-type electrode 7, N-type electrode 7 is placed in hole and is contacted with N-type GaN layer 2.

7) utilize laser cutting and splitting to become single crystal grain.

The above, be only specific embodiment of the utility model, is not limited to other execution mode of the present utility model.Within all genus technology path principle of the present utility model, any apparent amendment, replacement or the improvement made, within all should being included in protection range of the present utility model.

Claims

1. a gallium nitride based light emitting diode, it comprises substrate (1) and is placed in the ray structure that substrate (1) top is made up of N-type GaN layer (2), luminescent layer (3), P type GaN layer (4) and transparency conducting layer (5) successively, on transparency conducting layer (5), be equipped with P type electrode (6), it is characterized in that: hole is offered until N-type GaN layer (2) is provided with N-type electrode (7) and is placed in N-type GaN layer (2) bottom surface in described hole in described substrate (1) bottom.

2. gallium nitride based light emitting diode according to claim 1, is characterized in that: the diameter in described hole is 60-150um, and the height in hole is 80-200um.

3. gallium nitride based light emitting diode according to claim 1 and 2, is characterized in that: described hole is opened in substrate (1) bottom centre position.

4. gallium nitride based light emitting diode according to claim 3, is characterized in that: described N-type electrode (7) is full of hole, and the bottom surface of N-type electrode (7) flushes with substrate (1) bottom.